JP6829564B2 - Liquid plasma generator, liquid plasma generation method, treatment liquid purification device and treatment liquid purification method - Google Patents
Liquid plasma generator, liquid plasma generation method, treatment liquid purification device and treatment liquid purification method Download PDFInfo
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Description
この発明は、気泡を有する液体に対して電界を与えて当該液中でプラズマを発生させる液中プラズマ発生技術ならびに当該技術を用いて活性種を上記液体に含ませた処理液を精製する処理液精製技術に関するものである。 The present invention is an in-liquid plasma generation technique for generating plasma in the liquid by applying an electric field to the liquid having bubbles, and a treatment liquid for purifying the treatment liquid in which the active species is contained in the liquid using the technology. It is about refining technology.
反応生成物の生成手段や有害物質・細菌類の無害化手段として、化学的に活性な活性種を含有する液体を処理液として精製するために、数多く技術が提案されている。その一例として、例えば特許文献1では、水中放電によって水中でプラズマを発生させる液中プラズマ発生技術を用いて処理液(=水+活性種)を精製する技術が記載されている。この特許文献1に記載の装置では、絶縁性容器に水を貯留するとともに当該水に対して酸素リッチガスの微細気泡を導入する。そして、当該容器を外側から挟み込むように配置された一対の電極に交流パルスを印加することで気泡内放電を発生させ、これによって、気泡内の酸素を励起する。また、このときに発生する紫外線によって気泡外周面の水が励起されてOHラジカルが活性種として生成される。そして、生成したOHラジカルは逐次水に溶解する。この水中放電が交流パルスによって繰り返される結果、短時間の通電で水中には大量のOHラジカルが含有される。このように液中プラズマによって処理液(=水+OHラジカル)が精製される。 Many techniques have been proposed for purifying a liquid containing a chemically active active species as a treatment liquid as a means for producing a reaction product or a means for detoxifying harmful substances / bacteria. As an example thereof, for example, Patent Document 1 describes a technique for purifying a treatment liquid (= water + active species) by using a submerged plasma generation technique for generating plasma in water by an underwater discharge. In the apparatus described in Patent Document 1, water is stored in an insulating container and fine bubbles of oxygen-rich gas are introduced into the water. Then, an AC pulse is applied to a pair of electrodes arranged so as to sandwich the container from the outside to generate an in-bubble discharge, thereby exciting oxygen in the bubble. In addition, the ultraviolet rays generated at this time excite the water on the outer peripheral surface of the bubble to generate OH radicals as active species. Then, the generated OH radicals are sequentially dissolved in water. As a result of repeating this underwater discharge by an AC pulse, a large amount of OH radicals are contained in the water with a short energization. In this way, the treatment liquid (= water + OH radical) is purified by the submerged plasma.
上記従来技術では、絶縁性容器に水を貯留した状態で液中プラズマを発生させるため、絶縁性容器に対する水の入替毎に液中プラズマを発生させる必要があった。つまり、絶縁性容器に対する水の入替を行っている間、液中プラズマの発生を中断せざるを得ず、効率の面で改善の余地があった。また、絶縁性容器に水を貯留した状態で液中プラズマを発生させているため、このことが貯留された水の温度を上昇させる主要因のひとつとなっている。そこで、処理液の精製処理後に温度調整が必要となる場合があり、当該温度調整を行っている間に、水中の活性種が失活することがあった。 In the above-mentioned conventional technique, since the submerged plasma is generated while the water is stored in the insulating container, it is necessary to generate the submerged plasma every time the water is replaced with the insulating container. That is, while the water was replaced in the insulating container, the generation of plasma in the liquid had to be interrupted, and there was room for improvement in terms of efficiency. In addition, since submerged plasma is generated while water is stored in an insulating container, this is one of the main factors for raising the temperature of the stored water. Therefore, it may be necessary to adjust the temperature after the purification treatment of the treatment liquid, and the active species in the water may be inactivated during the temperature adjustment.
この発明は上記課題に鑑みなされたものであり、液中プラズマの発生を受けた液体が昇温するのを防止しつつ、液中プラズマを効率的に行うことができる液中プラズマ発生技術、ならびに当該液中プラズマ発生技術を用いて液体に活性種を含有する処理液を効率的に精製することができる処理液精製装置および処理液精製方法を提供することを目的とする。 The present invention has been made in view of the above problems, and includes a submerged plasma generation technique capable of efficiently performing submerged plasma while preventing the temperature of the liquid that has received submerged plasma from rising. It is an object of the present invention to provide a treatment liquid purification apparatus and a treatment liquid purification method capable of efficiently purifying a treatment liquid containing an active species in a liquid by using the plasma generation technique in the liquid.
この発明の第1の態様は、液中プラズマ発生であって、絶縁性材料で形成され、その管内において液体を流通させる配管と、配管の一方端に接続され、液体を配管に供給する液体供給部と、配管に液体が供給される前に液体供給部内を流れる液体に対して、ガス供給源から供給されるガスを気泡導入位置において導入する分岐配管と、分岐配管に介挿された開閉弁と、配管の外壁に沿って互いに離間して配置された複数の電極と、複数の電極に電圧を印加して配管を流れる液体中でプラズマを発生させる電源と、開閉弁を制御して液体中における気泡の量を時間的に変化させて液体中に気泡リッチな状態と気泡プアな状態とを作り出す導入量制御部と、を備え、導入量制御部は、単位時間あたりに液体供給部を流れる液体の流量よりも大きな流量でガスを気泡導入位置に送り込むように開閉弁を制御することで気泡リッチな状態を作り出すことを特徴としている。 The first aspect of this invention is a plasma generator in liquid, is formed of an insulating material, a pipe for flowing the liquid in the tube, is connected to one end of the pipe, the liquid supply for supplying liquid to the pipe and parts, for the liquid flowing in the liquid supply portion before the liquid is supplied to the pipe, a branch pipe for introducing the gas supplied from the gas supply source in the bubble introduction position, inserted into the branch pipe the opening and closing valve When a plurality of electrodes along the outer wall of the pipe are placed separately from one another, a power supply for generating plasma in a liquid flowing through the pipe by applying a voltage to the plurality of electrodes, the control to the liquid-off valve The introduction amount control unit is provided with an introduction amount control unit that creates a bubble-rich state and a bubble-poor state in the liquid by changing the amount of bubbles in the liquid over time, and the introduction amount control unit flows through the liquid supply unit per unit time. It is characterized by creating a bubble-rich state by controlling the on-off valve so that the gas is sent to the bubble introduction position at a flow rate larger than the flow rate of the liquid .
また、この発明の第2の態様は、液中プラズマ発生方法であって、気泡導入位置にて液体にガスを導入する第1工程と、ガスが導入された液体を絶縁性材料で形成された配管内を流通させる第2工程と、配管の外壁に沿って互いに離間して配置された複数の電極に電圧を印加して配管を流れる液体中でプラズマを発生させる第3工程と、を備え、第1工程では、配管内を流れる液体中における気泡の量を時間的に変化させて気泡リッチな状態と気泡プアな状態とを作り出し、単位時間あたりに流れる液体の流量よりも大きな流量でガスを気泡導入位置に送り込むことで気泡リッチな状態を作り出すことを特徴としている。 Further, the second aspect of the present invention is a method of generating plasma in a liquid, in which a first step of introducing a gas into a liquid at a bubble introduction position and a liquid into which the gas is introduced are formed of an insulating material. It includes a second step of circulating in the pipe and a third step of applying a voltage to a plurality of electrodes arranged apart from each other along the outer wall of the pipe to generate plasma in the liquid flowing through the pipe. in the first step, the amount of bubbles in the liquid flowing through the pipe temporally varied to leave create a state bubbles-rich and bubble-poor, with greater rate than the flow rate of the liquid flowing per unit time It is characterized by creating a bubble-rich state by sending gas to the bubble introduction position .
また、この発明の第3の態様は、活性種を含有する処理液を精製する処理液精製装置であって、上記液中プラズマ発生装置と、配管の一方端に接続される液体供給部と、配管の他方端に接続される液体取出部と、を備え、液体供給部は液体を配管に供給し、液中プラズマ発生装置はプラズマを発生させることで生成される活性種を液体に含有させて処理液を精製し、液体取出部は液中プラズマ発生装置から処理液を取り出すことを特徴としている。
また、この発明の第4の態様は、活性種を含有する処理液を精製する処理液精製装置であって、液体を貯留する貯留槽と、液中プラズマ発生装置と、液体取出部と、ポンプと、を備え、液中プラズマ発生装置は、絶縁性材料で形成され、外部からその管内において液体を流通させる配管と、配管の一方端に接続され、液体を配管に供給する液体供給部と、配管に液体が供給される前に液体供給部内を流れる液体に対して、ガス供給源から供給されるガスを気泡導入位置において導入する分岐配管と、分岐配管に介挿された開閉弁と、配管の外壁に沿って互いに離間して配置された複数の電極と、複数の電極に電圧を印加して配管を流れる液体中でプラズマを発生させる電源と、開閉弁を制御して液体中における気泡の量を時間的に変化させて液体中に気泡リッチな状態と気泡プアな状態とを作り出す導入量制御部と、を含み、プラズマを発生させることで生成される活性種を液体に含有させて処理液を精製し、液体供給部は、貯留槽に接続され、液体を配管に供給し、ポンプは、液体供給部に介挿され、液体を貯留槽から配管に向けて連続的に供給し、液体取出部は、配管の他方端と貯留槽とに接続され、液体取出部は液中プラズマ発生装置から処理液を取り出し貯留槽へ戻すことを特徴としている。
また、この発明の第5の態様は、処理液精製方法であって、貯留槽に貯留されている液体を送給する第1工程と、第1工程で送給されてきた液体に対して、ガスを気泡導入位置において導入する第2工程と、ガスが導入された液体を絶縁性材料で形成された配管内に流通させる第3工程と、配管の外壁に沿って互いに離間して配置された複数の電極に電圧を印加して配管内を流れる液体中でプラズマを発生させる第4工程と、プラズマを発生させることで生成される活性種を液体に含有させて処理液を精製する第5工程と、精製された処理液を貯留槽へ戻す第6工程と、第1から第6の工程を繰り返すことによって、貯留槽に貯留されていく処理液における活性種の量を増加させる第7の工程と、を備え、第2工程では、液体中における気泡の量を時間的に変化させて液体中に気泡リッチな状態と気泡プアな状態とを作り出し、単位時間あたりに流れる液体の流量よりも大きな流量でガスを気泡導入位置に送り込むことで気泡リッチな状態を作り出すことを特徴としている。
さらに、この発明の第6の態様は、処理液精製方法であって、貯留槽に貯留されている液体を送給する第1工程と、第1工程で送給されてきた液体に対して、ガスを気泡導入位置において導入する第2工程と、ガスが導入された液体を絶縁性材料で形成された配管内に流通させる第3工程と、配管の外壁に沿って互いに離間して配置された複数の電極に電圧を印加して配管内を流れる液体中でプラズマを発生させる第4工程と、プラズマを発生させることで生成される活性種を液体に含有させて処理液を精製する第5工程と、精製された処理液を貯留槽へ戻す第6工程と、第1から第6の工程を繰り返すことによって、貯留槽に貯留されていく処理液における活性種の量を増加させる第7の工程と、を備え、第2工程では、液体中における気泡の量を時間的に変化させて液体中に気泡リッチな状態と気泡プアな状態とを作り出すことを特徴としている。
A third aspect of the present invention is a treatment liquid purification apparatus for purifying a treatment liquid containing an active species, wherein the in-liquid plasma generator, a liquid supply unit connected to one end of a pipe, and the like. It is equipped with a liquid outlet connected to the other end of the pipe, the liquid supply part supplies the liquid to the pipe, and the submerged plasma generator contains the active species generated by generating plasma in the liquid. The treatment liquid is purified, and the liquid extraction unit takes out the treatment liquid from the submerged plasma generator.
A fourth aspect of the present invention is a treatment liquid purification device for purifying a treatment liquid containing an active species, which is a storage tank for storing a liquid, a submerged plasma generator, a liquid take-out unit, and a pump. The submerged plasma generator is made of an insulating material and has a pipe for circulating liquid in the pipe from the outside, and a liquid supply unit connected to one end of the pipe to supply the liquid to the pipe. A branch pipe that introduces the gas supplied from the gas supply source at the bubble introduction position to the liquid flowing in the liquid supply section before the liquid is supplied to the pipe, an on-off valve inserted in the branch pipe, and a pipe. A plurality of electrodes arranged apart from each other along the outer wall of the, a power supply that applies a voltage to the plurality of electrodes to generate plasma in the liquid flowing through the pipe, and a switch valve that controls the air bubbles in the liquid. It includes an introduction amount control unit that changes the amount over time to create a bubble-rich state and a bubble-poor state in the liquid, and processes the liquid by containing the active species generated by generating plasma. The liquid is purified, the liquid supply unit is connected to the storage tank, the liquid is supplied to the pipe, the pump is inserted in the liquid supply unit, and the liquid is continuously supplied from the storage tank to the pipe, and the liquid is supplied. The take-out part is connected to the other end of the pipe and the storage tank, and the liquid take-out part is characterized in that the treatment liquid is taken out from the submerged plasma generator and returned to the storage tank.
A fifth aspect of the present invention is a method for purifying a treatment liquid, wherein the liquid stored in the storage tank is fed to the first step and the liquid fed in the first step. The second step of introducing the gas at the bubble introduction position, the third step of circulating the liquid into which the gas was introduced into the pipe formed of the insulating material, and the third step of flowing the gas into the pipe, were arranged apart from each other along the outer wall of the pipe. The fourth step of applying a voltage to a plurality of electrodes to generate plasma in the liquid flowing in the pipe, and the fifth step of purifying the treatment liquid by containing the active species generated by generating the plasma in the liquid. The sixth step of returning the purified treatment liquid to the storage tank and the seventh step of increasing the amount of active species in the treatment liquid stored in the storage tank by repeating the first to sixth steps. In the second step, the amount of bubbles in the liquid is changed over time to create a bubble-rich state and a bubble-poor state in the liquid, which is larger than the flow rate of the liquid flowing per unit time. It is characterized by creating a bubble-rich state by sending gas to the bubble introduction position at a flow rate.
Further, a sixth aspect of the present invention is a method for purifying a treatment liquid, wherein the liquid stored in the storage tank is fed to the first step and the liquid fed in the first step. The second step of introducing the gas at the bubble introduction position, the third step of circulating the liquid into which the gas was introduced into the pipe formed of the insulating material, and the third step of flowing the gas into the pipe, were arranged apart from each other along the outer wall of the pipe. The fourth step of applying a voltage to a plurality of electrodes to generate plasma in the liquid flowing in the pipe, and the fifth step of purifying the treatment liquid by containing the active species generated by generating the plasma in the liquid. The sixth step of returning the purified treatment liquid to the storage tank and the seventh step of increasing the amount of active species in the treatment liquid stored in the storage tank by repeating the first to sixth steps. The second step is characterized in that the amount of bubbles in the liquid is changed with time to create a bubble-rich state and a bubble-poor state in the liquid.
このように構成された発明では、液体への気泡の導入量を時間的に変化させて液体中に気泡リッチな状態と気泡プアな状態とを作り出しながら当該液体が配管内を流通する。また、当該配管の外壁に沿って複数の電極が互いに離間して配置され、これらの電極に電圧が印加されることで配管内に電界が形成される。そして、当該電界に気泡リッチな状態の液体中が流通することでプラズマが優位に発生する。また、プラズマの発生に続いて気泡プアな状態の液体が流れ込んで上記プラズマの発生によって生成された活性種を巻き込んで活性種を含有する液体、つまり処理液を精製することができる。すなわち、液体を連続的に供給しながらプラズマを発生させることができ、液中プラズマを効率的に行うことができ、活性種を含有する処理液を効率的に精製することができる。また、上記したように、液中プラズマが発生した液体、つまり気泡リッチな状態の液体はそのまま配管内に留まらず、プラズマ発生直後に気泡プアな状態の液体が流れ込んで来るため、上記処理液の昇温を確実に防止することができる。 In the invention configured as described above, the liquid flows through the pipe while changing the amount of bubbles introduced into the liquid with time to create a bubble-rich state and a bubble-poor state in the liquid. Further, a plurality of electrodes are arranged apart from each other along the outer wall of the pipe, and an electric field is formed in the pipe by applying a voltage to these electrodes. Then, plasma is predominantly generated by the circulation of the liquid in a bubble-rich state in the electric field. Further, following the generation of plasma, a liquid in a bubble-poor state flows in, and the active species generated by the generation of the plasma is involved to purify the liquid containing the active species, that is, the treatment liquid. That is, plasma can be generated while continuously supplying the liquid, plasma in the liquid can be efficiently performed, and a treatment liquid containing an active species can be efficiently purified. Further, as described above, the liquid in which the plasma is generated in the liquid, that is, the liquid in the bubble-rich state does not stay in the pipe as it is, and the liquid in the bubble-poor state flows in immediately after the plasma is generated. The temperature rise can be reliably prevented.
図1は本発明にかかる液中プラズマ発生装置の一実施形態を装備した処理液精製装置の構成を示す図である。この処理液精製装置1は、貯留槽2に貯留されている水に活性種を溶解させた処理液を精製する装置であり、活性種を生成するためにプラズマ発生部3において水中プラズマ(本発明の「液中プラズマ」の一例に相当)を発生させている。このように本実施形態では、水が本発明の「液体」の一例に相当している。 FIG. 1 is a diagram showing a configuration of a processing liquid purification apparatus equipped with an embodiment of the submerged plasma generator according to the present invention. This treatment liquid purification apparatus 1 is an apparatus for purifying a treatment liquid in which an active species is dissolved in water stored in a storage tank 2, and an underwater plasma (the present invention) is used in a plasma generating unit 3 to generate an active species. (Equivalent to an example of "in-liquid plasma") is generated. Thus, in this embodiment, water corresponds to an example of the "liquid" of the present invention.
図2Aはプラズマ発生部の外観構成を示す斜視図であり、図2Bは図2Aに示すプラズマ発生部の縦断面図であり、図2Cは図2B中のC−C線断面図である。このプラズマ発生部3は、絶縁性材料により形成された配管31と、導電性材料で形成された2つの帯状電極32、33と、絶縁カバー34とを有している。配管31は鉛直方向に延設されており、その内部に形成されている管路311は後述するように水を流通させる経路であり、水中プラズマの発生によって活性種を生成するプラズマ発生領域(図2B中の符号35)として機能する。帯状電極32、33は、配管31の延設方向(図2Bの上下方向)に一定距離だけ離間した状態で、配管31に外挿されている。また、配管31の外周面のうち電極32、33で挟まれた電極間領域312と電極32、33とを配管31の径方向(図2Bの左右方向)における外側から絶縁材料で密着して覆うように、絶縁カバー34が設けられている。これによって電極32、33は、一定の電極間距離を保った状態で相互に絶縁されている。これらの電極32、33は交流電源4と電気的に接続されており、交流電源4から電極32、33への交流成分を含む電圧の印加によって、次に説明するように貯留槽2から配管31に送給されてくる水中でプラズマを発生させる(液中プラズマの発生)。 FIG. 2A is a perspective view showing an external configuration of the plasma generating portion, FIG. 2B is a vertical sectional view of the plasma generating portion shown in FIG. 2A, and FIG. 2C is a sectional view taken along line CC in FIG. 2B. The plasma generating unit 3 has a pipe 31 formed of an insulating material, two band-shaped electrodes 32 and 33 formed of a conductive material, and an insulating cover 34. The pipe 31 extends in the vertical direction, and the pipe 311 formed inside the pipe 31 is a path for circulating water as described later, and is a plasma generation region in which active species are generated by the generation of underwater plasma (FIG. It functions as reference numeral 35) in 2B. The band-shaped electrodes 32 and 33 are extrapolated to the pipe 31 in a state of being separated by a certain distance in the extending direction of the pipe 31 (vertical direction in FIG. 2B). Further, on the outer peripheral surface of the pipe 31, the inter-electrode region 312 sandwiched between the electrodes 32 and 33 and the electrodes 32 and 33 are closely covered with an insulating material from the outside in the radial direction of the pipe 31 (left-right direction in FIG. 2B). As described above, the insulating cover 34 is provided. As a result, the electrodes 32 and 33 are insulated from each other while maintaining a constant distance between the electrodes. These electrodes 32 and 33 are electrically connected to the AC power supply 4, and by applying a voltage including an AC component from the AC power supply 4 to the electrodes 32 and 33, the storage tank 2 to the pipe 31 are as described below. Generates plasma in the water supplied to (generation of submerged plasma).
図1に示すように、鉛直方向における配管31の下方端は配管51を介して貯留槽2に接続されている。この配管51にはポンプ6が介挿されており、装置全体を制御する制御部7からの動作指令に応じてポンプ6が作動することで貯留槽2に貯留されている水(あるいは後述するようにして精製された活性種を含有する水、つまり処理液)が配管51を介してプラズマ発生部3の配管31(図2A、図2B、図2C)に供給され、配管31の管路311内を下方側から上方側に流れる。この配管51はポンプ6とプラズマ発生部3との間の気泡導入位置IPで分岐しており、当該気泡導入位置IPから延びる分岐配管52を介して気泡導入部8から導入ガス、例えばアルゴンガスと空気との混合ガスや酸素ガスなどを気泡導入位置IPに送り込んで配管51内を流れる水に気泡を導入可能となっている。 As shown in FIG. 1, the lower end of the pipe 31 in the vertical direction is connected to the storage tank 2 via the pipe 51. A pump 6 is inserted in the pipe 51, and the water stored in the storage tank 2 (or as will be described later) is operated by operating the pump 6 in response to an operation command from the control unit 7 that controls the entire device. Water containing the active species purified in the above, that is, a treatment liquid) is supplied to the pipe 31 (FIGS. 2A, 2B, 2C) of the plasma generating section 3 via the pipe 51, and is inside the pipe 311 of the pipe 31. Flows from the lower side to the upper side. This pipe 51 is branched at the bubble introduction position IP between the pump 6 and the plasma generation unit 3, and the gas introduced from the bubble introduction unit 8, for example, argon gas, is branched from the bubble introduction unit 8 via the branch pipe 52 extending from the bubble introduction position IP. It is possible to introduce a bubble into the water flowing in the pipe 51 by sending a mixed gas with air, an oxygen gas, or the like to the bubble introduction position IP.
この気泡導入部8は、上記分岐配管52を介して導入ガスを供給するガス供給源81と、分岐配管52に介挿された開閉弁82とを有している。開閉弁82は制御部7からの開閉指令に応じて開閉することで、配管51を介してプラズマ発生部3に向けて供給される水への気泡の導入量を時間的に変化させる。すなわち、制御部7からの開指令に応じて開閉弁82が開くと、開成されている間、導入ガスが分岐配管52および開閉弁82を介して圧送され、上記気泡導入位置IPでの水への気泡の導入によって水中に気泡リッチな状態が作り出す。逆に、制御部7からの閉指令に応じて開閉弁82が閉じると、閉成されている間、導入ガスの供給が停止されて気泡プアな状態で水は配管51を介してプラズマ発生部3に供給される。このように、本実施形態では、制御部7は本発明の「導入量制御部」として機能しており、後で図3を参照しつつ説明するように、制御部7が一定時間毎に開閉弁82の開成と閉成とを繰り返すことで、プラズマ発生部3の配管31に対して気泡リッチな状態の水と気泡プアな状態の水とが交互に供給される。また、開閉弁が時間的に開閉動作を行わなくとも一定の気体流量を吐出する構造を採用した場合には、配管内で気液分離し、気体リッチな水と気体プアな水を作ることも出来る。この場合、上記構造が本発明の「導入量制御部」の一例に相当する。 The bubble introduction section 8 has a gas supply source 81 for supplying the introduced gas via the branch pipe 52, and an on-off valve 82 inserted in the branch pipe 52. By opening and closing the on-off valve 82 in response to an open / close command from the control unit 7, the amount of air bubbles introduced into the water supplied to the plasma generating unit 3 via the pipe 51 is changed over time. That is, when the on-off valve 82 is opened in response to the opening command from the control unit 7, the introduced gas is pressure-fed through the branch pipe 52 and the on-off valve 82 during the opening, and is sent to the water at the bubble introduction position IP. The introduction of air bubbles creates a bubble-rich state in the water. On the contrary, when the on-off valve 82 is closed in response to the closing command from the control unit 7, the supply of the introduced gas is stopped while the on-off valve 82 is closed, and water is generated through the pipe 51 in a bubble-poor state. It is supplied to 3. As described above, in the present embodiment, the control unit 7 functions as the "introduction amount control unit" of the present invention, and as will be described later with reference to FIG. 3, the control unit 7 opens and closes at regular time intervals. By repeating the opening and closing of the valve 82, water in a bubble-rich state and water in a bubble-poor state are alternately supplied to the pipe 31 of the plasma generating section 3. In addition, if a structure is adopted in which the on-off valve discharges a constant gas flow rate even if the on-off valve does not open and close in time, gas-liquid separation can be performed in the pipe to create gas-rich water and gas-poor water. You can. In this case, the above structure corresponds to an example of the "introduction amount control unit" of the present invention.
プラズマ発生部3の配管31の上方端は配管53によって貯留槽2に接続されており、プラズマ発生部3で水中プラズマ処理を受けた水をプラズマ発生部3から取り出して貯留槽2に戻すことが可能となっている。処理液精製装置1では、貯留槽2に貯留された水(活性種を含有する水を含む)は配管51、31、53を経由して循環しており、当該循環を行いながらプラズマ発生部3で水中プラズマを発生させることで水に含まれる活性種の濃度を高めることができる。 The upper end of the pipe 31 of the plasma generating unit 3 is connected to the storage tank 2 by the pipe 53, and the water subjected to the underwater plasma treatment by the plasma generating unit 3 can be taken out from the plasma generating unit 3 and returned to the storage tank 2. It is possible. In the treatment liquid purification apparatus 1, the water stored in the storage tank 2 (including water containing an active species) circulates through the pipes 51, 31, and 53, and the plasma generating unit 3 performs the circulation. By generating underwater plasma in water, the concentration of active species contained in water can be increased.
こうして活性種を含有する水、つまり処理液が精製されると、当該処理液を適当なタイミングで貯留槽2から外部に排出する必要がある。このために、貯留槽2の下方側面に配管54が接続されている。この配管54には、開閉弁55が介挿されており、制御部7からの開指令に応じて開閉弁55が開くと、貯留槽2に貯留されている処理液(=水+活性種)を外部に取り出し可能となる。また、貯留槽2の上方側面に配管56が接続されており、当該配管56によって貯留槽2は水供給源(図示省略)と接続されている。この配管56には、開閉弁57が介挿されており、制御部7からの開指令に応じて開閉弁57が開くと、精製前の水、つまり活性種を含有しない水が貯留槽2に補充される。さらに、貯留槽2の天井面に配管58が接続されており、当該配管58によって貯留槽2の内部空間が処理液精製装置1の周辺雰囲気と接続されている。この配管58には、開閉弁59が介挿されており、制御部7からの開指令に応じて開閉弁59が開くと、貯留槽2の内部空間を処理液精製装置1の周辺雰囲気と連通させて貯留槽2の内部を大気圧に戻すことができ、開閉弁59はいわゆるリーク弁として機能する。 When the water containing the active species, that is, the treatment liquid is purified in this way, it is necessary to discharge the treatment liquid from the storage tank 2 to the outside at an appropriate timing. For this purpose, the pipe 54 is connected to the lower side surface of the storage tank 2. An on-off valve 55 is inserted in the pipe 54, and when the on-off valve 55 is opened in response to an opening command from the control unit 7, the treatment liquid (= water + active species) stored in the storage tank 2 is opened. Can be taken out to the outside. Further, a pipe 56 is connected to the upper side surface of the storage tank 2, and the storage tank 2 is connected to a water supply source (not shown) by the pipe 56. An on-off valve 57 is inserted in the pipe 56, and when the on-off valve 57 is opened in response to an opening command from the control unit 7, water before purification, that is, water containing no active species is introduced into the storage tank 2. Be replenished. Further, a pipe 58 is connected to the ceiling surface of the storage tank 2, and the internal space of the storage tank 2 is connected to the surrounding atmosphere of the treatment liquid purification device 1 by the pipe 58. An on-off valve 59 is inserted in the pipe 58, and when the on-off valve 59 opens in response to an opening command from the control unit 7, the internal space of the storage tank 2 communicates with the surrounding atmosphere of the processing liquid purification device 1. The inside of the storage tank 2 can be returned to the atmospheric pressure, and the on-off valve 59 functions as a so-called leak valve.
次に、上記のように構成された処理液精製装置1により処理液、つまり活性種を含有する水を精製する方法について図3を参照しつつ説明する。 Next, a method of purifying the treatment liquid, that is, water containing the active species by the treatment liquid purification apparatus 1 configured as described above will be described with reference to FIG.
図3は図1の処理液精製装置1の動作を示すタイミングチャートである。この処理液精製装置1では、制御部7が予めメモリに記憶されたプログラムにしたがって装置各部を以下のように制御して処理液(=水+活性種)を精製する。処理液精製装置1では、未処理状態の水を貯留槽2に補充して貯留するために、開閉弁55、57、59がそれぞれ「閉成」、「開成」および「開成」される。そして、貯留槽2に対して所定量の水が貯留されると、制御部7からの開閉指令にしたがって開閉弁57が閉成して水の補充を停止する。 FIG. 3 is a timing chart showing the operation of the processing liquid purification apparatus 1 of FIG. In this treatment liquid purification apparatus 1, the control unit 7 controls each unit of the apparatus as follows according to a program stored in the memory in advance to purify the treatment liquid (= water + active species). In the treatment liquid purification apparatus 1, the on-off valves 55, 57, and 59 are "closed", "opened", and "opened", respectively, in order to replenish and store the untreated water in the storage tank 2. Then, when a predetermined amount of water is stored in the storage tank 2, the on-off valve 57 is closed according to the opening / closing command from the control unit 7 to stop the replenishment of water.
そして、制御部7に対して処理液の精製指令が外部から与えられると、制御部7からの動作指令に応じてポンプ6が作動する。これによって、貯留槽2内の水が配管51、31、53を経由して循環される。また、制御部7から開閉弁82に対して開成指令と閉成指令とが交互に与えられ、図3に示すように、開閉弁82の開成と閉成とが交互に繰り返される。 Then, when a processing liquid purification command is given to the control unit 7 from the outside, the pump 6 operates in response to the operation command from the control unit 7. As a result, the water in the storage tank 2 is circulated via the pipes 51, 31, and 53. Further, the control unit 7 alternately gives an opening command and a closing command to the on-off valve 82, and as shown in FIG. 3, the opening and closing of the on-off valve 82 are alternately repeated.
ここで、開閉弁82が開成状態となっている間、ガス供給源81から導入ガスが分岐配管52を介して気泡導入位置IPに送り込まれる。その結果、配管51内をプラズマ発生部3に向けて流れる水に対して気泡が導入される。本実施形態では、単位時間あたりに配管51を流れる水の流量よりも大きな流量で導入ガスを気泡導入位置IPに送り込んでいる。このため、図3に示すように、気泡導入位置IPでの気泡量は比較的多く、水中では気泡リッチな状態となっている。このため、水中では比較的大きなサイズの気泡が存在することとなる。 Here, while the on-off valve 82 is in the open state, the introduced gas is sent from the gas supply source 81 to the bubble introduction position IP via the branch pipe 52. As a result, bubbles are introduced into the water flowing in the pipe 51 toward the plasma generating unit 3. In the present embodiment, the introduced gas is sent to the bubble introduction position IP at a flow rate larger than the flow rate of the water flowing through the pipe 51 per unit time. Therefore, as shown in FIG. 3, the amount of bubbles at the bubble introduction position IP is relatively large, and the bubbles are rich in water. Therefore, bubbles having a relatively large size are present in water.
一方、開閉弁82が閉成状態となっている間、気泡導入位置IPで気泡の導入は停止され、図3に示すように、気泡導入位置IPでの気泡量は比較的少なく、水中では気泡プアな状態となっている。このように、本実施形態では、開閉弁82の開閉動作によって、水への気泡の導入量を時間的に変化させて水中に気泡リッチな状態と気泡プアな状態とを作り出している(気泡導入動作)。そして、このように気泡量が調整された水は配管51を介してプラズマ発生部3の配管31に供給される。したがって、当該配管31を鉛直下方から鉛直上方に流れる水も、図3に示すように、気泡リッチな状態と気泡プアな状態とが時間的に切り替わっている。なお、図3の中段グラフと下段グラフの時間ズレ量は気泡導入位置IPからプラズマ発生部3までの距離に相当している。 On the other hand, while the on-off valve 82 is in the closed state, the introduction of bubbles is stopped at the bubble introduction position IP, and as shown in FIG. 3, the amount of bubbles at the bubble introduction position IP is relatively small, and bubbles are generated in water. It is in a poor state. As described above, in the present embodiment, the opening / closing operation of the on-off valve 82 changes the amount of bubbles introduced into the water over time to create a bubble-rich state and a bubble-poor state in the water (bubble introduction). motion). Then, the water whose bubble amount is adjusted in this way is supplied to the pipe 31 of the plasma generation unit 3 via the pipe 51. Therefore, as shown in FIG. 3, the water flowing vertically above the pipe 31 is also temporally switched between a bubble-rich state and a bubble-poor state. The amount of time lag between the middle graph and the lower graph in FIG. 3 corresponds to the distance from the bubble introduction position IP to the plasma generating unit 3.
また、上記気泡導入動作に同期して制御部7は交流電源4を制御し、当該交流電源4から電極32,33に電圧を印加する。というのも、気泡リッチな状態の水が配管31の管路311のうち電極32、33で囲まれたプラズマ発生領域35に位置するときに電極32、33に電圧を印加すると、例えば図4中の(a)欄に示すようにプラズマが発生するのに対し、気泡プアな状態の水がプラズマ発生領域35に位置するときに電極32、33に電圧を印加したとしても同図中の(b)欄に示すようにプラズマは発生しないからである。なお、図4ではプラズマの発生状態を確認するために絶縁カバー34を取り払っており、ワニ口クリップで保持された部材が電極32、33であり、(a)欄において電極32,33の周辺で白くなっている領域がプラズマ発生領域である。 Further, the control unit 7 controls the AC power supply 4 in synchronization with the bubble introduction operation, and applies a voltage from the AC power supply 4 to the electrodes 32 and 33. This is because when a voltage is applied to the electrodes 32 and 33 when the water in a bubble-rich state is located in the plasma generation region 35 surrounded by the electrodes 32 and 33 in the pipeline 311 of the pipe 31, for example, in FIG. While plasma is generated as shown in column (a) of (a), even if a voltage is applied to the electrodes 32 and 33 when water in a bubble-poor state is located in the plasma generation region 35, (b) in the figure. This is because plasma is not generated as shown in the column. In FIG. 4, the insulating cover 34 is removed in order to confirm the plasma generation state, and the members held by the alligator clip are the electrodes 32 and 33, and in the column (a), around the electrodes 32 and 33. The white area is the plasma generation area.
このようにポンプ6の作動と開閉弁82の開閉とを継続している間、気泡リッチな状態の水がプラズマ発生領域35を流れている際にプラズマが発生して活性種が生成され、それに続いて気泡プアな状態の水がプラズマ発生領域35で活性種を溶解して処理液(=水+活性種)が精製され、配管53を介して貯留槽2に戻される。このような一連の動作(以下「処理液精製動作」という)が繰り返されることで、時間経過とともに貯留槽2に貯留されていく処理液における活性種の量は増加していく。そして、所定時間だけ処理液精製動作が継続された後で、ポンプ6を停止させるとともに開閉弁82を閉成し続けることで処理液精製動作を停止する。 While the operation of the pump 6 and the opening / closing of the on-off valve 82 are continued in this way, plasma is generated when water in a bubble-rich state is flowing through the plasma generation region 35, and active species are generated. Subsequently, water in a bubble-poor state dissolves the active species in the plasma generation region 35, the treatment liquid (= water + active species) is purified, and is returned to the storage tank 2 via the pipe 53. By repeating such a series of operations (hereinafter referred to as "treatment liquid purification operation"), the amount of active species in the treatment liquid stored in the storage tank 2 increases with the passage of time. Then, after the treatment liquid purification operation is continued for a predetermined time, the treatment liquid purification operation is stopped by stopping the pump 6 and continuing to close the on-off valve 82.
そして、制御部7に対して処理液の排出指令が与えられると、制御部7は開閉弁55に対して開成指令を与えて開閉弁55を開成する。これによって、精製された処理液(=水+活性種)が貯留槽2から排出される。なお、処理液の精製が必要になり、制御部7に精製指令が外部から与えられると、上記と同様にして処理液の精製が繰り返される。 Then, when a processing liquid discharge command is given to the control unit 7, the control unit 7 gives an opening command to the on-off valve 55 to open the on-off valve 55. As a result, the purified treatment liquid (= water + active species) is discharged from the storage tank 2. When purification of the treatment liquid is required and a purification command is given to the control unit 7 from the outside, purification of the treatment liquid is repeated in the same manner as described above.
以上のように、本実施形態では、ポンプ6によって水をプラズマ発生部3に向けて連続的に供給しながら気泡導入位置IPで気泡を断続的に導入することで、プラズマ発生部3の配管31に供給される水に気泡リッチな状態と気泡プアな状態とを作り出している。そして、気泡リッチな状態の水がプラズマ発生領域35を流れている間に電極32、33に電圧を印加しているので、プラズマを確実に発生させて活性種を生成することができる。しかも、活性種の生成直後に気泡プアな状態の水がプラズマ発生領域35を流れて活性種を溶解した処理液が精製され、貯留槽2に向けて送られる。したがって、開閉弁82を開閉させながらポンプ6を作動させている間、処理液を連続的に精製することができる。 As described above, in the present embodiment, water is continuously supplied to the plasma generation unit 3 by the pump 6 and bubbles are intermittently introduced at the bubble introduction position IP, so that the piping 31 of the plasma generation unit 3 is introduced. It creates a bubble-rich state and a bubble-poor state in the water supplied to the plasma. Then, since the voltage is applied to the electrodes 32 and 33 while the water in a bubble-rich state is flowing through the plasma generation region 35, plasma can be reliably generated to generate an active species. Moreover, immediately after the production of the active species, water in a bubble-poor state flows through the plasma generation region 35 to purify the treatment liquid in which the active species is dissolved and sent to the storage tank 2. Therefore, the processing liquid can be continuously purified while the pump 6 is operated while opening and closing the on-off valve 82.
また、上記実施形態では、配管31内で水を流しながら水中プラズマ処理を行っているため、処理液(=水+活性種)の昇温を確実に防止することができる。 Further, in the above embodiment, since the underwater plasma treatment is performed while flowing water in the pipe 31, it is possible to reliably prevent the temperature rise of the treatment liquid (= water + active species).
また、上記実施形態では、開閉弁82を開成して単位時間あたりに配管51を流れる水の流量よりも大きな流量で導入ガスを気泡導入位置IPに送り込んでいるため、プラズマ発生領域35に存在する気泡サイズが大きくなり、電極32、33への電圧印加によってプラズマ発生領域35に発生する電界が気泡に及ぶ確率が高くなり、プラズマ点灯が優位となっている。また、プラズマ発生領域35において配管31の内壁面に近いほど電界は強くなっており、気泡サイズの大型化によって気泡が配管31の内壁面に触れてプラズマが発生し易くなっており、処理液精製を効率的に行うことができる。 Further, in the above embodiment, since the on-off valve 82 is opened and the introduced gas is sent to the bubble introduction position IP at a flow rate larger than the flow rate of the water flowing through the pipe 51 per unit time, it exists in the plasma generation region 35. The bubble size becomes large, the probability that the electric field generated in the plasma generation region 35 by applying the voltage to the electrodes 32 and 33 reaches the bubbles increases, and the plasma lighting is predominant. Further, in the plasma generation region 35, the closer to the inner wall surface of the pipe 31, the stronger the electric field, and the larger the bubble size, the more easily the bubbles come into contact with the inner wall surface of the pipe 31 to generate plasma, and the processing liquid is purified. Can be done efficiently.
また、プラズマ発生部3内での配管31の配置姿勢ならびに水の供給方向などについては任意であるが、図2Bに示すように、配管31を鉛直方向に立設し、気泡が導入された水を配管31に対して鉛直下方から鉛直上方に流動させるように構成することで次の作用効果も得られる。すなわち、水の流れと、水の流れ方向において気泡の下流側(図2Bの上側)に存在する水(気泡プアな状態の水)の重力との作用によって気泡は横方向に扁平した形状となり、その一部は配管31の内壁面に近づく。その結果、プラズマがより発生し易くなっており、処理液精製をさらに効率的に行うことが可能となっている。 Further, the arrangement posture of the pipe 31 and the water supply direction in the plasma generating unit 3 are arbitrary, but as shown in FIG. 2B, the pipe 31 is erected in the vertical direction and water in which bubbles are introduced. The following effects can also be obtained by configuring the pipe 31 so as to flow vertically from the lower side to the upper side. That is, due to the action of the flow of water and the gravity of water (water in a bubble-poor state) existing on the downstream side of the bubble (upper side in FIG. 2B) in the flow direction of the water, the bubble becomes flat in the lateral direction. A part of it approaches the inner wall surface of the pipe 31. As a result, plasma is more likely to be generated, and the treatment liquid can be purified more efficiently.
さらに、電極32、33の間の絶縁性を確保するためには、例えば帯状絶縁体を嵌挿させるのみでも可能であるが、絶縁カバー34を設けることが電極32、33の間に絶縁材料が充填され、しかも電極32,33全体を絶縁材料で密閉しているため、上記プラズマが発生し易くなっている。 Further, in order to secure the insulating property between the electrodes 32 and 33, for example, it is possible to simply insert a band-shaped insulator, but it is possible to provide the insulating cover 34 by providing an insulating material between the electrodes 32 and 33. Since the electrodes 32 and 33 are filled and the entire electrodes 32 and 33 are sealed with an insulating material, the plasma is likely to be generated.
上記のように、この実施形態では、水を本発明の「液体」の一例とし、プラズマ発生部3、交流電源4、制御部7および気泡導入部8によって本発明の「液中プラズマ発生装置」を構成している。また、配管51、53がそれぞれ本発明の「液体供給部」および「液体取出部」の一例に相当している。また、絶縁カバー34が本発明の「絶縁部」の一例に相当している。また、交流電源4が本発明の「電源」の一例に相当している。 As described above, in this embodiment, water is taken as an example of the "liquid" of the present invention, and the "submerged plasma generator" of the present invention is provided by the plasma generating unit 3, the AC power supply 4, the control unit 7, and the bubble introducing unit 8. Consists of. Further, the pipes 51 and 53 correspond to an example of the "liquid supply unit" and the "liquid extraction unit" of the present invention, respectively. Further, the insulating cover 34 corresponds to an example of the "insulated portion" of the present invention. Further, the AC power supply 4 corresponds to an example of the "power supply" of the present invention.
ところで、プラズマ発生領域35でプラズマをより効率的に発生させるためには、配管31および絶縁カバー34の材質を考慮するのが望ましい。というのも、プラズマを発生させるために電極32、33に交流成分を含む比較的高い電圧を印加すると、電流は主として4つのルートR1〜R4で流れる(図2B参照)。そして、それらのうち配管31の管路311を通るルートR1に電流が流れることでプラズマを効率的に発生させることができる。そのためには、配管31を構成する絶縁体の誘電率ε31が絶縁カバー34を構成する絶縁体の誘電率ε34よりも大きくなるように、絶縁体を選定するのが望ましい。このような条件を満足する限り絶縁体の組み合わせは任意であるが、例えば配管31を二酸化チタン(比誘電率εr31=100)、ロッシェル塩(比誘電率εr31=100〜2000)、チタン酸バリウム(比誘電率εr31=1200)などで形成する一方、絶縁カバー34をアクリル樹脂(比誘電率εr34=2.7〜4.5)、ガラス(比誘電率εr34=3.7〜10)、石英(比誘電率εr34=3.5〜4)、アルミナ(比誘電率εr34=8.5)などで形成してもよい。 By the way, in order to generate plasma more efficiently in the plasma generation region 35, it is desirable to consider the materials of the pipe 31 and the insulating cover 34. This is because when a relatively high voltage containing an AC component is applied to the electrodes 32 and 33 to generate plasma, the current mainly flows through the four routes R1 to R4 (see FIG. 2B). Then, plasma can be efficiently generated by flowing a current through the route R1 passing through the pipe 311 of the pipe 31. For that purpose, it is desirable to select the insulator so that the dielectric constant ε31 of the insulator constituting the pipe 31 is larger than the dielectric constant ε34 of the insulator constituting the insulating cover 34. The combination of insulators is arbitrary as long as these conditions are satisfied. For example, the pipe 31 is provided with titanium dioxide (relative permittivity εr31 = 100), Rochelle salt (relative permittivity εr31 = 100 to 2000), barium titanate (relative permittivity εr31 = 100). While it is formed of relative permittivity εr31 = 1200), the insulating cover 34 is made of acrylic resin (relative permittivity εr34 = 2.7 to 4.5), glass (relative permittivity εr34 = 3.7-10), quartz (relative permittivity εr34 = 3.7-10), etc. It may be formed of a relative permittivity εr34 = 3.5 to 4), alumina (relative permittivity εr34 = 8.5), or the like.
また、プラズマ発生領域35でプラズマをより効率的に発生させるためには、気泡の直径が配管31の内径と近似する、また電極32、33の間の距離(配管31の長手方向における電極間領域312の長さ)と近似するのが望ましい。また、電極間距離が以下の関係、
電極間距離≧配管31の肉厚×(εr34/εr31)
を満足するのが望ましい。また、絶縁カバー34の肉厚が以下の関係、
(絶縁カバー34の肉厚)≧(配管31の肉厚)×(εr34/εr31)
を満足するのが望ましい。
Further, in order to generate plasma more efficiently in the plasma generation region 35, the diameter of the bubbles is close to the inner diameter of the pipe 31, and the distance between the electrodes 32 and 33 (the region between the electrodes in the longitudinal direction of the pipe 31). It is desirable to approximate it with a length of 312). In addition, the distance between electrodes is as follows,
Distance between electrodes ≥ Thickness of pipe 31 x (εr34 / εr31)
It is desirable to satisfy. In addition, the wall thickness of the insulating cover 34 has the following relationship.
(Thickness of insulation cover 34) ≧ (Thickness of pipe 31) × (εr34 / εr31)
It is desirable to satisfy.
また、上記実施形態では、絶縁カバー34の外周面を円筒面に仕上げているが、例えば図5に示すように、上記外周面のうち電極間領域312に対応する外周面領域341を凹凸面に仕上げてもよい。この場合、外周面領域341の表面に沿った最短距離、いわゆる沿面距離が長くなり、大気側でプラズマが点灯し難くなっており、プラズマ発生領域35でプラズマをより効率的に発生させることができる。 Further, in the above embodiment, the outer peripheral surface of the insulating cover 34 is finished as a cylindrical surface. For example, as shown in FIG. 5, the outer peripheral surface region 341 corresponding to the inter-electrode region 312 of the outer peripheral surface is made an uneven surface. You may finish it. In this case, the shortest distance along the surface of the outer peripheral surface region 341, the so-called creepage distance, becomes long, making it difficult for the plasma to light up on the atmospheric side, and the plasma can be generated more efficiently in the plasma generation region 35. ..
また、上記実施形態では、貯留槽2に水を貯留し、当該貯留槽2から水を供給しているが、水供給源(図示省略)から配管51を介してプラズマ発生部3に水を供給するように構成してもよい。また、上記実施形態では、本発明の「液体」として水を用いているが、その他の液体を用いてもよい。また、アルゴンガスと空気との混合ガスや酸素ガスなどの導入ガスを供給して気泡を導入しているが、気泡を導入するためにその他のガスを供給してもよい。 Further, in the above embodiment, water is stored in the storage tank 2 and water is supplied from the storage tank 2, but water is supplied from the water supply source (not shown) to the plasma generation unit 3 via the pipe 51. It may be configured to do so. Further, in the above embodiment, water is used as the "liquid" of the present invention, but other liquids may be used. Further, although the introduced gas such as a mixed gas of argon gas and air or an oxygen gas is supplied to introduce the bubbles, other gas may be supplied to introduce the bubbles.
また、上記実施形態では、2つの電極32、33に電圧を印加してプラズマを発生させているが、電極の数はこれに限定されるものではなく、3つ以上の電極を設けてもよい。また、電極32、33に印加する交流電圧がパルス成分を含んでいてもよい。また、上記実施形態では、気泡リッチ状態と気泡プア状態に対応して電圧の印加と印加停止とを切り替えているが、常時電圧を印加するように構成してもよい。 Further, in the above embodiment, voltage is applied to the two electrodes 32 and 33 to generate plasma, but the number of electrodes is not limited to this, and three or more electrodes may be provided. .. Further, the AC voltage applied to the electrodes 32 and 33 may include a pulse component. Further, in the above embodiment, the voltage application and the application stop are switched according to the bubble rich state and the bubble poor state, but the voltage may be constantly applied.
この発明は、液中プラズマ発生技術ならびに当該技術を用いて活性種を含有する処理液を精製する処理液精製技術全般に適用することができる。 The present invention can be applied to an in-liquid plasma generation technique and a general treatment solution purification technique for purifying a treatment solution containing an active species using the technique.
1…処理液精製装置
3…プラズマ発生部
4…交流電源
7…制御部(導入量制御部)
8…気泡導入部
31…配管
32,33…電極
34…絶縁カバー(絶縁部)
52…分岐配管
81…ガス供給源
82…開閉弁
312…電極間領域
341…外周面領域
IP…気泡導入位置
1 ... Processing liquid purification device 3 ... Plasma generator 4 ... AC power supply 7 ... Control unit (introduction amount control unit)
8 ... Bubble introduction part 31 ... Piping 32, 33 ... Electrode 34 ... Insulation cover (insulation part)
52 ... Branch piping 81 ... Gas supply source 82 ... On-off valve 312 ... Electrode-to-electrode area 341 ... Outer peripheral surface area IP ... Bubble introduction position
Claims (12)
前記配管の一方端に接続され、前記液体を前記配管に供給する液体供給部と、
前記配管に前記液体が供給される前に前記液体供給部内を流れる前記液体に対して、ガス供給源から供給されるガスを気泡導入位置において導入する分岐配管と、
前記分岐配管に介挿された開閉弁と、
前記配管の外壁に沿って互いに離間して配置された複数の電極と、
前記複数の電極に電圧を印加して前記配管を流れる前記液体中でプラズマを発生させる電源と、
前記開閉弁を制御して前記液体中における前記気泡の量を時間的に変化させて前記液体中に気泡リッチな状態と気泡プアな状態とを作り出す導入量制御部と、を備え、
前記導入量制御部は、単位時間あたりに前記液体供給部を流れる前記液体の流量よりも大きな流量で前記ガスを前記気泡導入位置に送り込むように前記開閉弁を制御することで気泡リッチな状態を作り出すことを特徴とする液中プラズマ発生装置。 A pipe made of an insulating material that allows liquid to flow through the pipe,
A liquid supply unit connected to one end of the pipe and supplying the liquid to the pipe,
For the liquid flowing through the liquid supply portion before the liquid to the pipe is supplied, a branch pipe for introducing the gas bubbles introduced into the position of the gas supplied from the gas supply source,
An on-off valve inserted in the branch pipe and
A plurality of electrodes arranged apart from each other along the outer wall of the pipe,
A power supply that applies a voltage to the plurality of electrodes to generate plasma in the liquid flowing through the pipe, and
It is provided with an introduction amount control unit that controls the on- off valve to change the amount of the bubbles in the liquid with time to create a bubble-rich state and a bubble-poor state in the liquid.
The introduction amount control unit controls the on-off valve so as to send the gas to the bubble introduction position at a flow rate larger than the flow rate of the liquid flowing through the liquid supply unit per unit time to obtain a bubble-rich state. An in-liquid plasma generator characterized by producing .
前記導入量制御部は、前記気泡リッチな状態と前記気泡プアな状態とを交互に繰り返して作り出す液中プラズマ発生装置。 The submerged plasma generator according to claim 1.
The introduction amount control unit is a submerged plasma generator that alternately repeats the bubble-rich state and the bubble-poor state.
前記複数の電極を相互に絶縁する絶縁部をさらに備える液中プラズマ発生装置。 The submerged plasma generator according to claim 1 or 2.
A submerged plasma generator further comprising an insulating portion that insulates the plurality of electrodes from each other.
前記絶縁部は、前記配管の外周面のうち前記複数の電極で挟まれた電極間領域と前記複数の電極とを前記配管の径方向における外側から絶縁材料で密着して覆う絶縁カバーである液中プラズマ発生装置。 The submerged plasma generator according to claim 3.
The insulating portion is a liquid that is an insulating cover that covers the inter-electrode region sandwiched between the plurality of electrodes and the plurality of electrodes on the outer peripheral surface of the pipe from the outside in the radial direction of the pipe with an insulating material. Medium plasma generator.
前記絶縁カバーの外周面のうち前記電極間領域に対応する外周面領域は凹凸形状を有する液中プラズマ発生装置。 The submerged plasma generator according to claim 4.
A submerged plasma generator having an uneven shape in the outer peripheral surface region of the outer peripheral surface of the insulating cover corresponding to the inter-electrode region.
前記配管の誘電率が前記絶縁部の誘電率よりも大きい液中プラズマ発生装置。 The submerged plasma generator according to any one of claims 3 to 5.
A submerged plasma generator in which the dielectric constant of the pipe is larger than the dielectric constant of the insulating portion.
前記ガスが導入された前記液体を絶縁性材料で形成された配管内を流通させる第2工程と、
前記配管の外壁に沿って互いに離間して配置された複数の電極に電圧を印加して前記配管を流れる前記液体中でプラズマを発生させる第3工程と、を備え、
前記第1工程では、前記配管内を流れる前記液体中における気泡の量を時間的に変化させて気泡リッチな状態と気泡プアな状態とを作り出し、単位時間あたりに流れる前記液体の流量よりも大きな流量で前記ガスを前記気泡導入位置に送り込むことで気泡リッチな状態を作り出すことを特徴とする液中プラズマ発生方法。 The first step of introducing gas into the liquid at the bubble introduction position ,
The second step of circulating the liquid into which the gas is introduced in a pipe formed of an insulating material, and
A third step of applying a voltage to a plurality of electrodes arranged apart from each other along the outer wall of the pipe to generate plasma in the liquid flowing through the pipe is provided.
In the first step, the amount of bubbles in the liquid flowing through the pipe temporally varied to leave create a state bubbles-rich and bubble-poor, than the flow rate of the liquid flowing per unit time A method for generating plasma in a liquid, which comprises sending the gas to the bubble introduction position at a large flow rate to create a bubble-rich state .
請求項1ないし6のいずれか一項に記載の液中プラズマ発生装置と、
前記配管の一方端に接続される液体供給部と、
前記配管の他方端に接続される液体取出部と、を備え、
前記液体供給部は前記液体を前記配管に供給し、
前記液中プラズマ発生装置は前記プラズマを発生させることで生成される前記活性種を前記液体に含有させて前記処理液を精製し、
前記液体取出部は前記液中プラズマ発生装置から前記処理液を取り出す
ことを特徴とする処理液精製装置。 A treatment liquid purification device that purifies a treatment liquid containing an active species.
The submerged plasma generator according to any one of claims 1 to 6.
A liquid supply unit connected to one end of the pipe and
A liquid outlet connected to the other end of the pipe.
The liquid supply unit supplies the liquid to the pipe and
The submerged plasma generator purifies the treatment liquid by containing the active species generated by generating the plasma in the liquid.
The liquid take-out unit is a treatment liquid purification apparatus characterized in that the treatment liquid is taken out from the submerged plasma generator.
前記液体を貯留する貯留槽と、 A storage tank for storing the liquid and
ポンプと、をさらに備え、 With a pump,
前記液体供給部は、前記貯留槽に接続され、 The liquid supply unit is connected to the storage tank and
前記ポンプは、前記液体供給部に介挿され、前記液体を前記貯留槽から前記配管に向けて連続的に供給し、 The pump is inserted into the liquid supply unit, and the liquid is continuously supplied from the storage tank toward the pipe.
前記液体取出部は、前記配管の他方端と前記貯留槽とに接続され、前記液体取出部は前記液中プラズマ発生装置から前記処理液を取り出し前記貯留槽へ戻す処理液精製装置。 The liquid take-out unit is connected to the other end of the pipe and the storage tank, and the liquid take-out unit is a treatment liquid purification device that takes out the treatment liquid from the submerged plasma generator and returns it to the storage tank.
液体を貯留する貯留槽と、 A water tank that stores liquids and
液中プラズマ発生装置と、 Submerged plasma generator and
液体取出部と、 Liquid outlet and
ポンプと、を備え、 With a pump,
前記液中プラズマ発生装置は、 The submerged plasma generator
絶縁性材料で形成され、外部からその管内において液体を流通させる配管と、 A pipe made of an insulating material that allows liquid to flow from the outside into the pipe,
前記配管の一方端に接続され、前記液体を前記配管に供給する液体供給部と、 A liquid supply unit connected to one end of the pipe and supplying the liquid to the pipe,
前記配管に前記液体が供給される前に前記液体供給部内を流れる前記液体に対して、ガス供給源から供給されるガスを気泡導入位置において導入する分岐配管と、 A branch pipe that introduces the gas supplied from the gas supply source at the bubble introduction position to the liquid that flows in the liquid supply unit before the liquid is supplied to the pipe.
前記分岐配管に介挿された開閉弁と、 An on-off valve inserted in the branch pipe and
前記配管の外壁に沿って互いに離間して配置された複数の電極と、 A plurality of electrodes arranged apart from each other along the outer wall of the pipe,
前記複数の電極に電圧を印加して前記配管を流れる前記液体中でプラズマを発生させる電源と、 A power supply that applies a voltage to the plurality of electrodes to generate plasma in the liquid flowing through the pipe, and
前記開閉弁を制御して前記液体中における前記気泡の量を時間的に変化させて前記液体中に気泡リッチな状態と気泡プアな状態とを作り出す導入量制御部と、を含み、 An introduction amount control unit that controls the on-off valve to change the amount of the bubbles in the liquid with time to create a bubble-rich state and a bubble-poor state in the liquid.
前記プラズマを発生させることで生成される前記活性種を前記液体に含有させて前記処理液を精製し、 The treatment liquid is purified by containing the active species produced by generating the plasma in the liquid.
前記液体供給部は、前記貯留槽に接続され、前記液体を前記配管に供給し、 The liquid supply unit is connected to the storage tank and supplies the liquid to the pipe.
前記ポンプは、前記液体供給部に介挿され、前記液体を前記貯留槽から前記配管に向けて連続的に供給し、 The pump is inserted into the liquid supply unit, and the liquid is continuously supplied from the storage tank toward the pipe.
前記液体取出部は、前記配管の他方端と前記貯留槽とに接続され、前記液体取出部は前記液中プラズマ発生装置から前記処理液を取り出し前記貯留槽へ戻すことを特徴とする処理液精製装置。 The liquid extraction unit is connected to the other end of the pipe and the storage tank, and the liquid extraction unit takes out the treatment liquid from the submerged plasma generator and returns the treatment liquid to the storage tank. apparatus.
前記第1工程で送給されてきた前記液体に対して、ガスを気泡導入位置において導入する第2工程と、 The second step of introducing gas at the bubble introduction position with respect to the liquid sent in the first step, and
前記ガスが導入された前記液体を絶縁性材料で形成された配管内に流通させる第3工程と、 The third step of circulating the liquid into which the gas has been introduced into a pipe formed of an insulating material, and
前記配管の外壁に沿って互いに離間して配置された複数の電極に電圧を印加して前記配管内を流れる前記液体中でプラズマを発生させる第4工程と、 A fourth step of applying a voltage to a plurality of electrodes arranged apart from each other along the outer wall of the pipe to generate plasma in the liquid flowing in the pipe.
前記プラズマを発生させることで生成される活性種を前記液体に含有させて処理液を精製する第5工程と、 The fifth step of purifying the treatment liquid by containing the active species generated by generating the plasma in the liquid.
精製された前記処理液を貯留槽へ戻す第6工程と、 The sixth step of returning the purified treatment liquid to the storage tank, and
前記第1から第6の工程を繰り返すことによって、前記貯留槽に貯留されていく処理液における活性種の量を増加させる第7の工程と、を備え、 A seventh step of increasing the amount of active species in the treatment liquid stored in the storage tank by repeating the first to sixth steps is provided.
前記第2工程では、前記液体中における前記気泡の量を時間的に変化させて前記液体中に気泡リッチな状態と気泡プアな状態とを作り出し、単位時間あたりに流れる前記液体の流量よりも大きな流量で前記ガスを前記気泡導入位置に送り込むことで気泡リッチな状態を作り出すことを特徴とする処理液精製方法。 In the second step, the amount of the bubbles in the liquid is changed with time to create a bubble-rich state and a bubble-poor state in the liquid, which is larger than the flow rate of the liquid flowing per unit time. A treatment liquid purification method characterized in that a bubble-rich state is created by sending the gas to the bubble introduction position at a flow rate.
前記第1工程で送給されてきた前記液体に対して、ガスを気泡導入位置において導入する第2工程と、 The second step of introducing gas at the bubble introduction position with respect to the liquid sent in the first step, and
前記ガスが導入された前記液体を絶縁性材料で形成された配管内に流通させる第3工程と、 The third step of circulating the liquid into which the gas has been introduced into a pipe formed of an insulating material, and
前記配管の外壁に沿って互いに離間して配置された複数の電極に電圧を印加して前記配管内を流れる前記液体中でプラズマを発生させる第4工程と、 A fourth step of applying a voltage to a plurality of electrodes arranged apart from each other along the outer wall of the pipe to generate plasma in the liquid flowing in the pipe.
前記プラズマを発生させることで生成される活性種を前記液体に含有させて処理液を精製する第5工程と、 The fifth step of purifying the treatment liquid by containing the active species generated by generating the plasma in the liquid.
精製された前記処理液を貯留槽へ戻す第6工程と、 The sixth step of returning the purified treatment liquid to the storage tank, and
前記第1から第6の工程を繰り返すことによって、前記貯留槽に貯留されていく処理液における活性種の量を増加させる第7の工程と、を備え、 A seventh step of increasing the amount of active species in the treatment liquid stored in the storage tank by repeating the first to sixth steps is provided.
前記第2工程では、前記液体中における前記気泡の量を時間的に変化させて前記液体中に気泡リッチな状態と気泡プアな状態とを作り出すことを特徴とする処理液精製方法。 The second step is a treatment liquid purification method, which comprises changing the amount of the bubbles in the liquid with time to create a bubble-rich state and a bubble-poor state in the liquid.
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