JP6846866B2 - Reflector for LED light emitting element - Google Patents
Reflector for LED light emitting element Download PDFInfo
- Publication number
- JP6846866B2 JP6846866B2 JP2015252203A JP2015252203A JP6846866B2 JP 6846866 B2 JP6846866 B2 JP 6846866B2 JP 2015252203 A JP2015252203 A JP 2015252203A JP 2015252203 A JP2015252203 A JP 2015252203A JP 6846866 B2 JP6846866 B2 JP 6846866B2
- Authority
- JP
- Japan
- Prior art keywords
- plating layer
- silver
- reflector
- emitting element
- led light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Device Packages (AREA)
Description
本発明は、ＬＥＤ発光素子用反射板に関する。 The present invention relates to a reflector for an LED light emitting element.
従来、ＬＥＤ発光素子が実装されるリードフレームに反射板を備えることが提案されている。前記反射板は、ＬＥＤ発光素子から一様な強度の光を出力するために、反射面で光がある程度乱反射することが有効であるとされており、反射面の表面に適度な凹凸があることが好ましいと考えられている。 Conventionally, it has been proposed to provide a reflector on a lead frame on which an LED light emitting element is mounted. In order to output light of uniform intensity from the LED light emitting element, it is said that it is effective that the light is diffusely reflected on the reflecting surface to some extent, and the surface of the reflecting surface has appropriate irregularities. Is considered preferable.
前記凹凸を備える前記反射板として、例えば、基材上に形成された銅めっき層と、該銅めっき層上に形成された銀めっき層とを備え、該銀めっき層が４０ｎｍ以上８０ｎｍ以下の範囲の算術平均粗さＲａを備えるものが知られている（例えば、特許文献１参照）。 As the reflection plate having the concave-convex, for example, a copper plating layer formed on the substrate, and a silver plating layer formed on the copper plating layer, ranges silver plating layer is 80nm of less than 40nm There is known one having the arithmetic average roughness Ra of (see, for example, Patent Document 1).
また、アルミニウム等の金属基材上に、平均粒子径０．１〜５μｍの範囲の無機粒子と無機系結着剤又は熱硬化性樹脂とを含有する塗布液をスクリーン印刷等により塗布し、乾燥させることにより、０．５０〜１．００μｍの範囲の算術平均粗さＲａを備えるものが知られている（例えば、特許文献２参照）。 Further, a coating liquid containing inorganic particles having an average particle diameter in the range of 0.1 to 5 μm and an inorganic binder or a thermosetting resin is applied onto a metal substrate such as aluminum by screen printing or the like, and dried. It is known that the arithmetic average roughness Ra in the range of 0.50 to 1.00 μm is provided (see, for example, Patent Document 2).
しかしながら、前記特許文献１記載の反射板では算術平均粗さＲａが小さく、実質的に鏡面と変わりないので光が十分に乱反射しないという不都合がある。また、前記特許文献２記載の反射板では、前記凹凸が無機粒子と無機系結着剤又は熱可塑性樹脂とからなり、それ自体十分な反射率を備えていないので、一様な強度の光を得ることが難しいという不都合がある。 However, the reflector described in Patent Document 1 has a disadvantage that the arithmetic average roughness Ra is small and substantially the same as the mirror surface, so that light is not sufficiently diffusely reflected. Further, in the reflector described in Patent Document 2, the unevenness is composed of inorganic particles and an inorganic binder or a thermoplastic resin, and does not have sufficient reflectance by itself, so that light of uniform intensity is emitted. There is an inconvenience that it is difficult to obtain.
本発明は、かかる不都合を解消して、ＬＥＤ発光素子の光を十分に乱反射することができ、優れた反射率を備えるＬＥＤ発光素子用反射板を提供することを目的とする。 An object of the present invention is to provide a reflector for an LED light emitting element, which can sufficiently diffusely reflect the light of the LED light emitting element and has an excellent reflectance by eliminating such inconvenience.
かかる目的を達成するために、本発明のＬＥＤ発光素子用反射板は、銅合金からなる基材上に、ニッケルめっき層を備え、該ニッケルめっき層上に銀ストライクめっき層を備え、該銀ストライクめっき層上に銀めっき層を備え、該銀めっき層の表面は、０．３６〜１．０μｍの範囲の算術平均粗さＲａを備えることを特徴とする。 In order to achieve such an object, the reflector for an LED light emitting element of the present invention is provided with a nickel plating layer on a base material made of a copper alloy, a silver strike plating layer on the nickel plating layer, and the silver strike. A silver plating layer is provided on the plating layer, and the surface of the silver plating layer is characterized by having an arithmetic average roughness Ra in the range of 0.36 to 1.0 μm.
本発明のＬＥＤ発光素子用反射板は、前記銀めっき層自体による光の反射に加え、該銀めっき層の表面が前記範囲の算術平均粗さＲａを備えるので、ＬＥＤ発光素子の発光光を十分に乱反射することができ、優れた反射率を得ることができる。 In the reflector for LED light emitting element of the present invention, in addition to the reflection of light by the silver plating layer itself, the surface of the silver plating layer has an arithmetic average roughness Ra in the above range, so that the light emitted from the LED light emitting element can be sufficiently emitted. Diffuse reflection can be obtained, and excellent reflectance can be obtained.
前記銀めっき層の表面の算術平均粗さＲａが前記範囲外であるときには、ＬＥＤ発光素子の発光光を十分に乱反射することができない。 When the arithmetic mean roughness Ra of the surface of the silver plating layer is out of the above range, the light emitted from the LED light emitting element cannot be sufficiently diffusely reflected.
本発明のＬＥＤ発光素子用反射板は、ＬＥＤ発光素子の発光光を十分に乱反射するために、前記銀めっき層の表面の算術平均粗さＲａが０．３６〜０．５５μｍの範囲にあることがさらに好ましい。 The reflector for an LED light emitting element of the present invention has an arithmetic average roughness Ra of the surface of the silver plating layer in the range of 0.36 to 0.55 μm in order to sufficiently diffusely reflect the light emitted from the LED light emitting element. Is even more preferable.
次に、本発明の実施の形態についてさらに詳しく説明する。 Next, embodiments of the present invention will be described in more detail.
本実施形態のＬＥＤ発光素子用反射板は、黄銅（真鍮）等の銅合金の基材からなり、ＬＥＤ発光素子が実装されるリードフレーム上に形成されている。 The reflector for the LED light emitting element of the present embodiment is made of a base material of a copper alloy such as brass, and is formed on a lead frame on which the LED light emitting element is mounted.
本実施形態のＬＥＤ発光素子用反射板は、前記基材上に形成されたニッケルめっき層と、該ニッケルめっき層上に形成された銀ストライクめっき層と、該銀ストライクめっき層上に形成された銀めっき層とからなり、該銀めっき層の表面は、０．３６〜１．０μｍ、好ましくは０．３６〜０．５５μｍの範囲の算術平均粗さＲａを備えている。前記銀めっき層は、例えば、シアン化銀３０〜２００ｇ／リットル、硼酸塩２０〜１００ｇ／リットル、遊離のシアン塩１０〜１００ｇ／リットルを含み、ｐＨ８〜１１の銀電気めっき浴を用い、浴温２５〜７０℃、例えば３０℃、陰極電流密度０．５〜１０Ａ／ｄｍ２（ＡＳＤ）の条件で、２〜２０μｍの厚さとすることにより形成することができる。 The reflector for the LED light emitting element of the present embodiment is formed on the nickel plating layer formed on the base material, the silver strike plating layer formed on the nickel plating layer, and the silver strike plating layer. It is composed of a silver-plated layer, and the surface of the silver-plated layer has an arithmetic average roughness Ra in the range of 0.36 to 1.0 μm, preferably 0.36 to 0.55 μm. The silver plating layer contains, for example, silver cyanide 30 to 200 g / liter, boron salt 20 to 100 g / liter, and free cyanide salt 10 to 100 g / liter, and uses a silver electroplating bath having a pH of 8 to 11, and the bath temperature. It can be formed by setting the thickness to 2 to 20 μm under the conditions of 25 to 70 ° C., for example, 30 ° C. and a cathode current density of 0.5 to 10 A / dm 2 (ASD).
本実施形態のＬＥＤ発光素子用反射板は、前記基材上に形成された前記銀めっき層の表面が、０．３６〜１．０μｍ、好ましくは０．３６〜０．５５μｍの範囲の算術平均粗さＲａを備えていることにより、９５％以上の反射率を得ることができる。尚、例えば、前記反射率は、分光測色計（コニカミノルタビジネスソリューションズ株式会社製、型式：ＣＭ−２６００ｄ）を用いて測定することができる。 LED light-emitting element for reflecting plate of the present embodiment, the surface of the silver plating layer formed on said substrate, 0.36 ～1.0Myuemu, the arithmetic mean of preferably from 0.36 ～0.55Myuemu By providing the roughness Ra, a reflectance of 95% or more can be obtained. For example, the reflectance can be measured using a spectrocolorimeter (manufactured by Konica Minolta Business Solutions Co., Ltd., model: CM-2600d).
次に、本発明の実施例及び比較例を示す。 Next, examples and comparative examples of the present invention will be shown.
〔実施例１〕
本実施例では、まず、黄銅からなる基材上に、株式会社ＪＣＵ製光沢ニッケルめっき液を用いて厚さ０．５μｍのニッケルめっき層を形成し、次いで銀ストライクめっきを行った。
[Example 1]
In this example, first, a nickel plating layer having a thickness of 0.5 μm was formed on a base material made of brass using a bright nickel plating solution manufactured by JCU Co., Ltd., and then silver strike plating was performed.
次に、前記銀ストライクめっきを施した前記ニッケルめっき層上に、シアン化銀５０ｇ／リットル、過硼酸カリウム７５ｇ／リットル、遊離シアン化カリウム２０ｇ／リットルを含み、ｐＨ９．８の銀電気めっき浴を用い、浴温３０℃、陰極電流密度０．５Ａ／ｄｍ２（ＡＳＤ）の条件で、２０μｍの厚さの銀めっき層を備える反射板を形成した。 Next, a silver electroplating bath containing 50 g / liter of silver cyanide, 75 g / liter of potassium perboroate, and 20 g / liter of free potassium cyanide on the nickel plating layer subjected to the silver strike plating was used. A reflector having a silver plating layer with a thickness of 20 μm was formed under the conditions of a bath temperature of 30 ° C. and a cathode current density of 0.5 A / dm 2 (ASD).
本実施例で得られた反射板は、前記銀めっき層が０．３６〜０．５３μｍの範囲の算術平均粗さＲａを備え、分光測色計（コニカミノルタビジネスソリューションズ株式会社製、型式：ＣＭ−２６００ｄ）を用いて測定した反射率が９５．３５％であった。結果を表１に示す。 The reflector obtained in this embodiment has an arithmetic mean roughness Ra in which the silver plating layer is in the range of 0.36 to 0.53 μm, and is a spectrocolorimeter (manufactured by Konica Minolta Business Solutions Co., Ltd., model: The reflectance measured using CM-2600d) was 95.35%. The results are shown in Table 1.
〔比較例１〕
本比較例では、黄銅からなる基材上に、株式会社ＪＣＵ製光沢ニッケルめっき液を用いて厚さ０．５μｍのニッケルめっき層を備える反射板を形成した。
[Comparative Example 1]
In this comparative example, a reflector having a nickel plating layer having a thickness of 0.5 μm was formed on a base material made of brass using a bright nickel plating solution manufactured by JCU Corporation.
本比較例で得られた反射板は、前記ニッケルめっき層が１．４３〜１．７２μｍの範囲の算術平均粗さＲａを備え、分光測色計（コニカミノルタビジネスソリューションズ株式会社製、型式：ＣＭ−２６００ｄ）を用いて測定した反射率が６１．２３％であった。結果を表１に示す。 The reflector obtained in this comparative example has an arithmetic mean roughness Ra in the range of 1.43 to 1.72 μm in the nickel plating layer, and is a spectrocolorimeter (manufactured by Konica Minolta Business Solutions Co., Ltd., model: CM). The reflectance measured using -2600d) was 61.23%. The results are shown in Table 1.
〔比較例２〕
本比較例では、黄銅からなる基材上に、市販の無光沢ニッケルめっき液を用いて厚さ４μｍのニッケルめっき層を備える反射板を形成した。
[Comparative Example 2]
In this comparative example, a reflector having a nickel plating layer having a thickness of 4 μm was formed on a base material made of brass using a commercially available matte nickel plating solution.
本比較例で得られた反射板は、前記ニッケルめっき層が３．０１〜３．２１μｍの範囲の算術平均粗さＲａを備え、分光測色計（コニカミノルタビジネスソリューションズ株式会社製、型式：ＣＭ−２６００ｄ）を用いて測定した反射率が６０．４４％であった。結果を表１に示す。 The reflector obtained in this comparative example has an arithmetic mean roughness Ra in which the nickel plating layer is in the range of 3.01 to 3.21 μm, and is a spectrocolorimeter (manufactured by Konica Minolta Business Solutions Co., Ltd., model: CM). The reflectance measured using -2600d) was 60.44%. The results are shown in Table 1.
〔比較例３〕
本比較例では、黄銅からなる基材上に、市販のサテンニッケルめっき液を用いて厚さ４μｍのニッケルめっき層を形成し、前記銀電気めっき浴に代えて、市販の光沢銀めっき液（シアン化銀１００ｇ／リットル、炭酸二カリウム６０ｇ/リットル、遊離シアン化カリウム１ｇ／リットル、シアン化セレン酸カリウムをセレンとして１ｍｇ／Ｌ含み、ｐＨ９．５、浴温５０℃）を用い、厚さ０．５μｍの銀めっき層を形成して反射板とした以外は実施例１と全く同一にして反射板を得た。
[Comparative Example 3]
In this comparative example, a nickel plating layer having a thickness of 4 μm is formed on a base material made of brass using a commercially available satin nickel plating solution, and a commercially available glossy silver plating solution (cyan) is used instead of the silver electroplating bath. 100 g / liter of silver chemical, 60 g / liter of dipotassium carbonate, 1 g / liter of free potassium cyanide, 1 mg / L of potassium selenate cyanide as selenium, pH 9.5, bath temperature 50 ° C.), 0.5 μm thick A reflector was obtained in exactly the same manner as in Example 1 except that a silver-plated layer was formed to form a reflector.
本比較例で得られた反射板は、前記銀めっき層が４．５１〜４．６μｍの範囲の算術平均粗さＲａを備え、分光測色計（コニカミノルタビジネスソリューションズ株式会社製、型式：ＣＭ−２６００ｄ）を用いて測定した反射率が８８．７％であった。結果を表１に示す。 The reflector obtained in this comparative example has an arithmetic mean roughness Ra in the range of 4.51 to 4.6 μm in the silver plating layer, and is a spectrocolorimeter (manufactured by Konica Minolta Business Solutions Co., Ltd., model: CM). The reflectance measured using -2600d) was 88.7%. The results are shown in Table 1.
表１から、銅合金からなる基材上にニッケルめっき層を備え、該ニッケルめっき層上に前記銀めっき層を備え、該銀めっき層の表面の算術平均粗さＲａが０．１〜１．０μｍの範囲にある実施例１，２の反射板によれば、９５％以上の反射率を得ることができることが明らかである。 From Table 1, a nickel plating layer is provided on a base material made of a copper alloy, the silver plating layer is provided on the nickel plating layer, and the arithmetic average roughness Ra of the surface of the silver plating layer is 0.1 to 1. According to the reflectors of Examples 1 and 2 in the range of 0 μm, it is clear that a reflectance of 95% or more can be obtained.
一方、前記基材上にニッケルめっき層又は無光沢ニッケルめっき層を備える比較例１，２の反射板、該基材上に銀めっき層を備えるものの、その表面の算術平均粗さが１．０μｍを超える比較例３の反射板では、９５％以上の反射率を得ることができないことがわかる。 On the other hand, although the reflectors of Comparative Examples 1 and 2 having a nickel-plated layer or a matte nickel-plated layer on the base material and a silver-plated layer on the base material, the arithmetic average roughness of the surface thereof is 1.0 μm. It can be seen that with the reflector of Comparative Example 3 exceeding the above, a reflectance of 95% or more cannot be obtained.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015252203A JP6846866B2 (en) | 2015-12-24 | 2015-12-24 | Reflector for LED light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015252203A JP6846866B2 (en) | 2015-12-24 | 2015-12-24 | Reflector for LED light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017117948A JP2017117948A (en) | 2017-06-29 |
| JP6846866B2 true JP6846866B2 (en) | 2021-03-24 |
Family
ID=59234679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015252203A Active JP6846866B2 (en) | 2015-12-24 | 2015-12-24 | Reflector for LED light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6846866B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12493217B2 (en) | 2022-05-24 | 2025-12-09 | Samsung Electronics Co., Ltd. | Display device and light source device therefor |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315511A (en) * | 1991-12-25 | 1993-11-26 | Nikko Kinzoku Kk | Lead frame material and manufacture thereof |
| JP3906199B2 (en) * | 2003-11-27 | 2007-04-18 | 京セラ株式会社 | Light emitting device |
| JP4771179B2 (en) * | 2007-05-31 | 2011-09-14 | 東芝ライテック株式会社 | Lighting device |
| JP2010287741A (en) * | 2009-06-11 | 2010-12-24 | Nagasaki Univ | Lead frame, manufacturing method thereof, and semiconductor device |
| KR20120089567A (en) * | 2009-06-24 | 2012-08-13 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame for optical semiconductor device, process for manufacturing lead frame for optical semiconductor device, and optical semiconductor device |
| WO2012036281A1 (en) * | 2010-09-17 | 2012-03-22 | ローム株式会社 | Semiconductor light-emitting device, method for producing same, and display device |
| JP2012124310A (en) * | 2010-12-08 | 2012-06-28 | Nitto Denko Corp | Reflection film and formation method therefor |
| US8846421B2 (en) * | 2011-03-10 | 2014-09-30 | Mds Co. Ltd. | Method of manufacturing lead frame for light-emitting device package and light-emitting device package |
| WO2013027847A1 (en) * | 2011-08-25 | 2013-02-28 | 富士フイルム株式会社 | Reflective substrate for led light emitting elements, and led package |
| JP2014049594A (en) * | 2012-08-31 | 2014-03-17 | Dainippon Printing Co Ltd | Lead frame for optical semiconductor device and optical semiconductor device using the same |
| JP2015088541A (en) * | 2013-10-29 | 2015-05-07 | 凸版印刷株式会社 | Light-emitting element lead frame substrate |
-
2015
- 2015-12-24 JP JP2015252203A patent/JP6846866B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12493217B2 (en) | 2022-05-24 | 2025-12-09 | Samsung Electronics Co., Ltd. | Display device and light source device therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017117948A (en) | 2017-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102683564B (en) | Manufacture method and the light emitting device packaging piece of lead frame | |
| CN102804429A (en) | Lead frame for optical semiconductor device, process for manufacturing lead frame for optical semiconductor device, and optical semiconductor device | |
| WO2010071182A1 (en) | Optical semiconductor device lead frame and manufacturing method thereof | |
| CN105940463B (en) | Electric contact material and its manufacture method | |
| US20130100642A1 (en) | Light-diffusion led lamp | |
| JP2020519502A5 (en) | ||
| JP2012124310A (en) | Reflection film and formation method therefor | |
| CN102471895A (en) | Plated article of silver and/or silver alloy having oxide layer on surface | |
| JP6846866B2 (en) | Reflector for LED light emitting element | |
| CN102909923B (en) | Decorative film structure and decorative member | |
| TWM441088U (en) | Side-mounted rotating lights | |
| JP2006228856A5 (en) | ||
| JPWO2015162880A1 (en) | Optical member and lighting cover | |
| CN102889530B (en) | a lighting fixture | |
| CN106233062B (en) | Lighting fixtures and lamps | |
| JP2018123425A (en) | Aluminum-based plating material and method for producing the same | |
| JP5970210B2 (en) | Light bulb shaped LED lamp | |
| JP2013174865A (en) | Lamination structure having indium-silver alloy layer on copper or copper alloy layer, and manufacturing method thereof | |
| CN206875159U (en) | A kind of LED Tri-proof lights | |
| JP2006331714A5 (en) | ||
| CN204494310U (en) | Two-sided ring Combined LED cylindrical lamp | |
| CN201103843Y (en) | a transparent lampshade | |
| JP2014075599A (en) | Light reflection material and light-emitting diode device using the same | |
| CN203811837U (en) | Optical reflection film | |
| JP2012231102A (en) | Copper-based material having copper diffusion-prevention layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181219 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191009 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191112 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200109 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200630 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200827 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210202 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210302 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6846866 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |