JP6849064B2 - 真空蒸着用のマスクの洗浄方法及びリンス組成物 - Google Patents
真空蒸着用のマスクの洗浄方法及びリンス組成物 Download PDFInfo
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/32—Organic compounds containing nitrogen
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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Description
本実施形態の洗浄方法は、例えば、有機EL素子製造時の真空蒸着工程において使用されたマスクを洗浄する方法であり、洗浄工程と、リンス工程と、乾燥工程を含む。本実施形態の洗浄方法では、洗浄工程において、N−メチル−2−ピロリジノン及びN,N−ジメチルホルムアミドから選ばれる少なくとも1種を含む洗浄組成物でマスクを洗浄する。次いで、リンス工程において、洗浄組成物で洗浄後のマスクを、HFE−347pc−f、HFE−254pc、HFE−356pcf及びHFE−449mec−fから選ばれる少なくとも1種のハイドロフルオロエーテルを含むリンス組成物によってリンスする。その後、必要に応じて乾燥工程を行い、マスクを乾燥させる。
HFE−347pc−fの市販品としては、例えば、「アサヒクリン(登録商標)AE−3000」(旭硝子社製)が挙げられる。
本実験例では、所定の時間加熱した場合の、NMP及びDMFによるリンス組成物の分解性について調べた。HFE−347pc−f(旭硝子社製、AE−3000)にNMP又はDMFを5質量%、同様にHFE−449sl(スリーエム社製、Novec7100)にNMP又はDMFを5質量%添加したサンプル液を作製した。各サンプル液を、55℃の恒温槽内に3日間静置した。静置後の各溶剤サンプル液中のフッ素イオン濃度をフッ素イオンメーター(東亜ディーケーケー社製、IM−55G、フッ素イオン電極:東亜ディーケーケー社製、F−2021)によって測定した。なお、フッ素イオン濃度の検出限界は0.5ppmとした。結果を表1に示す。
本実験例では、加速試験として、HFE−347pc−f又はHFE−449slと、NMPとを含むサンプル液を加熱還流させた時のリンス組成物の、NMPによる分解性について調べた。上記同様のHFE−347pc−f(旭硝子社製、AE−3000)に対し、NMPを5質量%添加したサンプル液の250gをフラスコに入れ、ヒーターで沸騰状態になるように加熱して、4時間還流した。その後、80分間で175gの留出液を採取し、残った釜残液のpH、フッ素イオン濃度、酸分を測定した。結果を表2に示す。
リンス組成物としてHFE−347pc−fを用いた場合の金属製マスクの洗浄性について調べた。低分子型有機EL材料が付着した金属(SUS)片を室温(25℃)のNMPに1分浸漬する。その後、金属片を、室温(25℃)のHFE−347pc−f(旭硝子社製、AE−3000)に1分浸漬することでリンスして、引き上げる。この金属片を自然乾燥させた後純水に浸漬し、抽出されたフッ素イオン濃度をフッ素イオンメーター(東亜ディーケーケー社製、IM−55G、フッ素イオン電極:東亜ディーケーケー社製、F−2021)によって測定する。なお、フッ素イオン濃度の検出限界は0.5ppmとする。その結果を、フッ素イオンが検出される場合を「検出」、検出されない場合を「不検出」として、表3に示す。
リンス組成物としてHFE−449slを用いた場合の金属製マスクの洗浄性について調べた。低分子型有機EL材料が付着した金属(SUS)片を室温(25℃)のNMPに1分浸漬した後、室温(25℃)のHFE−449sl(スリーエム社製、Novec7100)に1分浸漬することでリンスし、引き上げる。この金属片を自然乾燥させた後、純水に浸漬し、抽出されたフッ素イオンの有無を調べる。その結果を表3に示す。
Claims (9)
- 真空蒸着用のマスクの洗浄方法であって、
前記マスクを、N−メチル−2−ピロリジノン及びN,N−ジメチルホルムアミドから選ばれる少なくとも1種を含む洗浄組成物で洗浄し、
洗浄後の前記マスクを、CF3CH2−O−CF2CHF2 で表されるハイドロフルオロエーテルを含むリンス組成物でリンスすることを特徴とする洗浄方法。 - 前記リンス組成物中の前記ハイドロフルオロエーテルの含有量の割合は、80質量%以上100質量%以下である、請求項1に記載の洗浄方法。
- 前記洗浄組成物は、N−メチル−2−ピロリジノンを含む、請求項1又は2に記載の洗浄方法。
- 前記マスクの洗浄及びリンスをいずれも10℃以上40℃以下で行う、請求項1〜3のいずれか一項に記載の洗浄方法。
- 前記マスクの洗浄及びリンスをいずれも20℃以上30℃以下で行う、請求項1〜4のいずれか一項に記載の洗浄方法。
- 前記真空蒸着は、低分子型有機EL素子の製造において行われる、請求項1〜5のいずれか一項に記載の洗浄方法。
- 前記リンス組成物でリンスした後のマスクを乾燥させる、請求項1〜6のいずれか一項に記載の洗浄方法。
- N−メチル−2−ピロリジノン及びN,N−ジメチルホルムアミドから選ばれる少なくとも1種を含む洗浄組成物で洗浄された真空蒸着用のマスクをリンスするリンス組成物であって、
CF3CH2−O−CF2CHF2 で表されるハイドロフルオロエーテルを含むことを特徴とするリンス組成物。 - 前記リンス組成物中の前記ハイドロフルオロエーテルの含有量の割合は、80質量%以上100質量%以下である、請求項8に記載のリンス組成物。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017124086 | 2017-06-26 | ||
| JP2017124086 | 2017-06-26 | ||
| PCT/JP2018/016296 WO2019003605A1 (ja) | 2017-06-26 | 2018-04-20 | 真空蒸着用のマスクの洗浄方法及びリンス組成物 |
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| JPWO2019003605A1 JPWO2019003605A1 (ja) | 2020-04-23 |
| JP6849064B2 true JP6849064B2 (ja) | 2021-03-24 |
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| Country | Link |
|---|---|
| JP (1) | JP6849064B2 (ja) |
| KR (1) | KR102478194B1 (ja) |
| CN (1) | CN109415798A (ja) |
| SG (1) | SG11201913385UA (ja) |
| TW (1) | TWI781168B (ja) |
| WO (1) | WO2019003605A1 (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102380299B1 (ko) * | 2019-03-15 | 2022-03-29 | 도판 인사츠 가부시키가이샤 | 증착 마스크의 제조 방법, 표시 장치의 제조 방법, 및, 증착 마스크 중간체 |
| CN110846154A (zh) * | 2019-08-30 | 2020-02-28 | 安徽富乐德科技发展有限公司 | 一种oled有机蒸镀设备防着板清洗剂及应用 |
| CN114502709B (zh) * | 2019-10-21 | 2024-09-13 | 3M创新有限公司 | 从基底去除电致发光材料 |
| CN111172550B (zh) * | 2020-02-14 | 2022-03-11 | 福建省佑达环保材料有限公司 | 一种oled掩膜版清洗剂及其清洗工艺 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2821384B2 (ja) * | 1995-03-10 | 1998-11-05 | 工業技術院長 | 含フッ素エーテル及びエタノールからなる共沸様組成物 |
| JP2002110345A (ja) | 2000-09-29 | 2002-04-12 | Toshiba Corp | マスク及びそれを用いた有機el表示素子の製造方法 |
| JP3364640B2 (ja) * | 2000-12-18 | 2003-01-08 | 独立行政法人産業技術総合研究所 | 含フッ素エーテルとアルコール類からなる共沸または共沸様組成物 |
| JP4092914B2 (ja) | 2001-01-26 | 2008-05-28 | セイコーエプソン株式会社 | マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法 |
| JP2002313564A (ja) | 2001-04-17 | 2002-10-25 | Nec Corp | シャドウマスク、該シャドウマスクの製造方法、およびディスプレイ |
| ATE392466T1 (de) * | 2003-06-27 | 2008-05-15 | Asahi Glass Co Ltd | Reinigungs- bzw. spülverfahren |
| WO2005026309A1 (ja) * | 2003-09-09 | 2005-03-24 | Zeon Corporation | 洗浄剤組成物および洗浄方法 |
| JP3833650B2 (ja) * | 2003-12-04 | 2006-10-18 | 関東化学株式会社 | 低分子型有機el素子製造の真空蒸着工程において使用するマスクの洗浄液組成物および洗浄方法 |
| JP2006117811A (ja) * | 2004-10-22 | 2006-05-11 | Central Glass Co Ltd | 含フッ素エーテルを含む共沸および共沸様組成物 |
| KR20070052205A (ko) * | 2005-11-16 | 2007-05-21 | 도오꾜오까고오교 가부시끼가이샤 | 반도체 제조용 약액 공급 장치의 세정액 |
| US20070129273A1 (en) | 2005-12-07 | 2007-06-07 | Clark Philip G | In situ fluoride ion-generating compositions and uses thereof |
| JP4775852B2 (ja) * | 2006-10-23 | 2011-09-21 | Jx日鉱日石エネルギー株式会社 | 焼結部品の洗浄方法 |
| JP5085954B2 (ja) * | 2007-02-23 | 2012-11-28 | スリーエム イノベイティブ プロパティズ カンパニー | フッ素系溶剤含有溶液の精製方法及び精製装置ならびに洗浄装置 |
| CN101679922B (zh) * | 2007-06-08 | 2011-11-09 | 旭硝子株式会社 | 清洗溶剂及清洗方法 |
| JP2009259565A (ja) * | 2008-04-16 | 2009-11-05 | Canon Inc | マスク洗浄装置 |
| TWI480937B (zh) * | 2011-01-06 | 2015-04-11 | 斯克林集團公司 | 基板處理方法及基板處理裝置 |
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- 2018-04-20 KR KR1020197029659A patent/KR102478194B1/ko active Active
- 2018-04-20 WO PCT/JP2018/016296 patent/WO2019003605A1/ja not_active Ceased
- 2018-04-20 JP JP2019526180A patent/JP6849064B2/ja active Active
- 2018-04-20 CN CN201880000486.5A patent/CN109415798A/zh active Pending
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- 2018-04-27 TW TW107114473A patent/TWI781168B/zh active
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| Publication number | Publication date |
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| CN109415798A (zh) | 2019-03-01 |
| TW201905191A (zh) | 2019-02-01 |
| WO2019003605A1 (ja) | 2019-01-03 |
| KR20200021444A (ko) | 2020-02-28 |
| SG11201913385UA (en) | 2020-01-30 |
| JPWO2019003605A1 (ja) | 2020-04-23 |
| TWI781168B (zh) | 2022-10-21 |
| KR102478194B1 (ko) | 2022-12-15 |
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