JP6858079B2 - Monitoring device and monitoring method - Google Patents

Description

The present invention relates to monitoring of a vapor deposition apparatus.

Conventionally, a technique for monitoring a thin-film deposition apparatus that deposits a film on a substrate by depositing a vapor-deposited material on the substrate has been developed. An example thereof is disclosed in Patent Document 1.

Patent Document 1 discloses a technique in which a CCD (Charge Coupled Device) camera recognizes an irradiation position of an electron beam on a vapor-deposited material and controls the position of the electron beam based on the irradiation position.

Japanese Unexamined Patent Publication No. 2005-126759 (published on May 19, 2005)

However, Patent Document 1 does not disclose that a plurality of images are acquired each time the molten metal surface condition is monitored or the position of the electron beam is controlled. Therefore, in the technique of Patent Document 1, when the monitoring or control is performed, an image inappropriate as an analysis target is acquired depending on the surrounding environment of the material container (eg, the brightness of the material container itself or its surroundings). There is a possibility that it will end up. In this case, the monitoring or control may not be performed with high accuracy.

One aspect of the present invention is to realize a monitoring device or the like capable of accurately determining the state of the vapor deposition device.

In order to solve the above problems, the monitoring device according to one aspect of the present invention is a monitoring device that monitors a thin-film deposition device that deposits a film on a substrate by depositing a vapor-deposited material on the substrate. A reference image, which is an image of the container from a plurality of images captured by the imaging unit, and an imaging unit that takes a container for holding the vapor deposition material as a subject and performs a plurality of imagings, which is provided in the vapor deposition apparatus. It includes an image selection unit that selects an image having the highest correlation as an analysis target image, and a state determination unit that determines the state of the vapor deposition apparatus by analyzing the analysis target image selected by the image selection unit.

Further, in order to solve the above problems, the monitoring method according to one aspect of the present invention is a monitoring method for monitoring a vapor deposition apparatus that deposits a film on a substrate by depositing a vapor deposition material on the substrate. A reference image which is an image of the container from the imaging step of performing the imaging a plurality of times with the container for holding the vapor deposition material provided in the vapor deposition apparatus as a subject and the plurality of images captured in the imaging step. An image selection step of selecting an image having the highest correlation with the image to be analyzed, and a state determination step of determining the state of the thin-film deposition apparatus by analyzing the analysis target image selected in the image selection step. Including.

According to the monitoring device and the monitoring method according to one aspect of the present invention, it is possible to accurately determine whether or not the state of the vapor deposition device is in a normal state.

It is a block diagram which shows an example of the specific structure of the monitoring apparatus which concerns on Embodiment 1 of this invention. It is a figure which shows an example of the monitoring system which concerns on Embodiment 1 of this invention. It is a figure which shows an example of the structure of the turret provided in the vapor deposition apparatus which concerns on Embodiment 1 of this invention. It is a schematic cross-sectional view of the hearth liner provided in the said vapor deposition apparatus and its periphery. It is a figure which shows an example of the reference image group registered in the reference image DB provided in the said monitoring apparatus, (a) shows an example of the reference image group which includes a plurality of reference images which use state of a hearth liner is different, (a). b) shows an example of a reference image group including a plurality of reference images having different molten metal surface positions, and (c) shows an example of a reference image group including a plurality of reference images having different inclinations of the hearth liner within a predetermined range. (D) shows an example of a reference image group including a plurality of reference images having different irradiation positions of electron beams. It is a figure for demonstrating the determination process of the position of a hearth liner. It is a figure for demonstrating the determination process of the molten metal surface position. It is a figure for demonstrating the determination process of an irradiation position. The following is an example of a plurality of images captured in the position monitoring of the hearth liner. It is an example of a plurality of images taken in the molten metal position monitoring. An example of a plurality of images captured in the irradiation position monitoring is shown. It is a flowchart which shows an example of the processing flow in the said monitoring system. It is a flowchart which shows an example of the processing flow in the said monitoring apparatus.

[Embodiment 1]
One embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 13.

≪Monitoring system configuration≫
First, an example of the monitoring system according to the present embodiment will be described with reference to FIGS. 2 to 4. FIG. 2 is a diagram showing an example of a monitoring system according to the present embodiment. FIG. 3 is a diagram showing an example of the configuration of the turret 25 included in the vapor deposition apparatus 2. FIG. 4 is a schematic cross-sectional view of the Hearthliner 24 and its surroundings. Note that FIG. 4 is a cross-sectional view when the hearth liner 24 is in a normal position.

An example of a container for holding a thin-film deposition material provided in the thin-film deposition apparatus is a crucible. When a hearth liner is provided on the inner wall of the crucible, examples of the container include a hearth liner. In the present embodiment, the case where the container is a hearth liner will be described as an example.

As shown in FIG. 2, the monitoring system according to the present embodiment includes a monitoring device 1, a vapor deposition device 2, and a material supply device 3. The thin-film deposition apparatus 2 is an apparatus for forming a film on the substrate 100 by depositing the vapor deposition material MA on the substrate 100. The monitoring device 1 is a device that monitors the vapor deposition device 2. Further, the material supply device 3 is a device that supplies the vapor deposition material MA to the hearth liner 24 included in the vapor deposition device 2. Examples of the vapor deposition material MA include, but are not limited to, aluminum wire materials, and various materials (for example, metal materials) that the vapor deposition apparatus 2 deposits on the substrate 100 may be used. Hereinafter, the configurations of the monitoring device 1 and the vapor deposition device 2 will be described more specifically. First, the vapor deposition apparatus 2 will be described.

<Thin-film deposition device 2>
The thin-film deposition apparatus 2 includes an electron beam source (EB (Electron Beam) source) 21, a beam deflection magnet 22, a pole piece 23, a hearth liner 24, a turret 25, a turret rotating portion 26, and a substrate rotating portion 27.

The electron beam source 21 is a beam emission source that emits an electron beam EB to the vapor deposition material MA supplied (held) to the hearth liner 24 under the control of a control unit (not shown) included in the vapor deposition apparatus 2. Is. Further, the electron beam source 21 includes a filament capable of emitting photons and thermions constituting the electron beam EB. When an acceleration voltage is applied to the filament together with an electric current, the electron beam source 21 emits the emitted thermoelectrons as an electron beam EB in front of the electron beam source 21.

Further, by applying a current to the filament but not applying an acceleration voltage, the filament emits only photons. In this case, the electron beam source 21 functions as an illumination light source (incandescent lamp) that illuminates the surroundings thereof. By making the electron beam source 21 function as an illumination light source at the timing when the imaging unit 11 (described later) takes an image, it is not necessary to separately install an illumination light source for imaging. Further, when the illumination light source is separately installed, it is often provided in the vicinity of the imaging unit 11. In this case, halation may occur and the Haasliner 24 and the turret 25 may not be clearly imaged. As described above, by using the electron beam source 21 as the illumination light source, it is possible to prevent the occurrence of halation and to clearly image the hearth liner 24 and the turret 25. In addition to the electron beam source 21, the illumination light source may be installed at a position where the halation does not occur.

The beam deflection magnet 22 and the pole piece 23 are course changing portions that change the course of the electron beam EB emitted from the electron beam source 21. Specifically, the beam deflection magnet 22 and the pole piece 23 change the course of the electron beam EB by changing the generated magnetic force under the control of the control unit. As a result, the electron beam EB draws a trajectory of a substantially arc from the electron beam source 21 and irradiates the vapor deposition material MA in the hearth liner 24. Further, the irradiation position is controlled so as to irradiate the position where the film formation rate is maximized, that is, the center of the molten metal surface (surface) of the vapor deposition material MA in the hearth liner 24.

The hearth liner 24 is a crucible for holding the vapor-deposited material MA supplied by the material supply device 3. The position of the hearth liner 24 is changed by driving the turret rotating portion 26. The vapor deposition material MA is supplied to the hearth liner 24 in the vicinity of the material supply device 3 (material supply position). Further, at a position facing the substrate 100 (deposited position), the vapor-deposited material MA in the hearth liner 24 receives the electron beam EB emitted from the electron beam source 21 and is melted and evaporated. Then, the evaporated vapor-deposited material MA is vapor-deposited (adhered) to the substrate 100, so that the vapor-film material MA is deposited on the substrate 100.

The turret 25 is a base on which a plurality of hearth liners 24 are provided. In this embodiment, as shown in FIG. 3, six hearth liners 24 are provided around the same. By rotating the turret 25 around the rotation shaft AX by driving the turret rotating portion 26, the hearth liner 24 can be moved between the material supply position and the vapor deposition position. Therefore, the vapor deposition material MA supplied to the Haas liner 24A at the vapor deposition position can be evaporated to form a film on the substrate 100, and the vapor deposition material MA can be supplied to another Haas liner 24B at the material supply position. it can. That is, the supply of the vapor-deposited material MA to the hearth liner 24 and the vapor deposition of the thin-film deposition material MA on the substrate 100 can be continuously performed.

Further, as shown in FIG. 4, the hearth liner 24 is provided to the turret 25 via a heat insulating material (reflector) 30. The heat insulating material 30 enhances the heat retention of the thin-film deposition material MA supplied to the hearth liner 24. The heat insulating material 30 can efficiently dissolve the vapor deposition material MA. In addition, the heat insulating material 30 allows the hearth liner 24 to be positioned relative to the turret 25.

The turret rotating portion 26 is connected to a substantially center of the turret 25 and rotates the turret 25 around the rotation axis AX. Further, the substrate rotating portion 27 rotates the substrate 100 during film formation by attaching the substrate 100 to be film-formed to the substantially center thereof. The drive of the turret rotating unit 26 and the substrate rotating unit 27 is controlled by the control unit.

<Monitoring device 1>
Next, the monitoring device 1 will be described with reference to FIGS. 1, 2, and 4 to 11. FIG. 1 is a block diagram showing an example of a specific configuration of the monitoring device 1 according to the present embodiment. FIG. 5 is a diagram showing an example of a reference image group registered in the reference image DB 141, and FIG. 5A shows an example of a reference image group including a plurality of reference images having different usage states of the hearth liner 24. b) shows an example of a reference image group including a plurality of reference images having different hot water surface positions, and (c) shows an example of a reference image group including a plurality of reference images having different inclinations of the hearth liner 24 within a predetermined range. , (D) show an example of a reference image group including a plurality of reference images having different irradiation positions of the electron beam EB. FIG. 6 is a diagram for explaining a process of determining the position of the hearth liner 24. FIG. 7 is a diagram for explaining a process for determining the position of the molten metal. FIG. 8 is a diagram for explaining the irradiation position determination process. 9 to 11 show an example of a plurality of captured images.

The monitoring device 1 monitors whether or not the state of the vapor deposition device 2 is normal by analyzing the image of the hearth liner 24 captured by the imaging unit 11. As shown in FIG. 1, the monitoring device 1 includes a control unit 10, an imaging unit 11 (also shown in FIG. 2), a notification unit 13, and a storage unit 14. Further, as shown in FIG. 2, the monitoring device 1 includes a camera shutter 12.

(Image pickup unit)
The imaging unit 11 controls the imaging control unit 15 (described later) to provide a Haas liner 24 (specifically, the Haas liner 24 and its peripheral region) for holding the vapor-deposited material MA to which the electron beam EB is irradiated. It is used as a subject and is imaged multiple times.

By imaging a plurality of times, the range of selection can be expanded as compared with the case where the image (captured image) acquired by one imaging is used as the analysis target image. Therefore, it is possible to increase the possibility that a clear image of the hearth liner 24 (and its surroundings) is used as the image to be analyzed, so that the state of the vapor deposition apparatus 2 can be accurately determined.

The monitoring device 1 includes (A) the position of the hearth liner 24, (B) the position of the molten metal of the vapor deposition material MA supplied to the hearth liner 24, and (C) the electrons emitted from the electron beam source 21 in the hearth liner 24. The irradiation position of the beam EB is to be monitored. In other words, in the monitoring device 1, the state determination unit 17, which will be described later, analyzes the above (A), (B), and (C) reflected in the analysis target image as the analysis target, so that the state of the vapor deposition device 2 is changed. Determine if it is in a normal state. Specifically, the state determination unit 17 analyzes each position reflected in the analysis target image to determine whether or not each position is in a normal position (reference position).

Here, the analysis target image is an image captured by the imaging unit 11, and in order to determine whether or not each of the above positions is in a normal position in each of the monitoring (A) to (C). It is an image to be analyzed. Further, the normal position (reference position) is a state in which the virtual surface including the opening of the hearth liner 24 is hardly tilted with respect to the surface of the turret 25 (within a predetermined range) in the above (A). Refers to the state with the inclination of). In the above (B), it is the position of the molten metal of the vapor deposition material MA when the vapor deposition material MA is supplied to the hearth liner 24 to the extent that there is no problem in the vapor deposition process on the substrate 100 in the thin film deposition apparatus 2. In the above (C), it becomes the center of gravity of the molten metal surface of the vapor deposition material MA in the hearth liner 24.

In the present embodiment, the imaging unit 11 continuously images a plurality of times in each of the above monitoring (A) to (C). In other words, a plurality of imagings are performed in each of the three monitorings (A) to (C) above. As a result, in each of the monitoring (A) to (C), it is possible to acquire a plurality of images showing the hearth liner 24 having different brightness. However, if it is not considered that a plurality of images are acquired in each monitoring, a plurality of consecutive imagings may be performed only once in one vapor deposition process.

In the present embodiment, the monitoring device 1 targets the above (A) to (C) as the monitoring target (analysis target), but at least one of the above (A) to (C) may be the monitoring target.

Further, the imaging unit 11 changes at least one of the imaging sensitivity and the shutter speed each time the hearth liner 24 is imaged. The imaging sensitivity defines the amount (capacity) of capturing light per predetermined time during imaging. The shutter speed defines the focusing time at the time of imaging. By changing either the imaging sensitivity or the shutter speed, images with different brightness can be acquired. In general, the lower the imaging sensitivity and the higher the shutter speed, the darker the image.

For example, when only one image is captured and the image is too bright (or too dark), it may be difficult to identify the hearth liner 24 or the vapor deposition material MA in the image. is there. By acquiring a plurality of images having different brightness, it is possible to acquire an image in which the brightness is suppressed (or an image in which the brightness is emphasized). In this case, by analyzing the image, the possibility that the hearth liner 24 or the vapor-deposited material MA can be identified increases.

A plurality of imaging sensitivities and shutter speeds are provided. The imaging sensitivity and the shutter speed are set in a range in which it is estimated that there is a relatively high possibility of acquiring an image of the Haasliner 24 having a contrast that is relatively easy to compare with the reference image by experiments and the like. Further, the imaging sensitivity and the shutter speed are set in consideration of mutual correlation. The reference image is an image showing the imaging result of the hearth liner 24 that has been captured in advance by the imaging unit 11 and registered in the reference image DB (Database) 141 (described later) of the storage unit 14.

In the present embodiment, the imaging sensitivity is set to 16 stages of "1", "1.5", "2", ..., "7", "7.5" and "8". "1" corresponds to ISO sensitivity of 100. When the imaging sensitivity is increased by 1, the amount of light taken in per predetermined time is doubled. That is, when the imaging sensitivity is increased by 0.5, the amount of capture becomes √2 times. The shutter speed is set in three stages of "1/60", "1/120" and "1/240". These setting values and the number of settings are merely examples.

Further, the imaging sensitivity and the shutter speed may be set according to each of the above monitoring (A) to (C). In this case, the imaging unit 11 is controlled by the imaging control unit 15, and in each of the above monitoring (A) to (C), the Haas liner 24 has an imaging sensitivity and a shutter speed set according to each monitoring. To image.

Further, in each of the monitoring (A) to (C), a predetermined period during which the imaging unit 11 does not capture the images may be provided in the period from the start to the end of the imaging of the plurality of images. .. For the predetermined period, a value suitable for each of the above monitoring (A) to (C) is set by an experiment or the like. For example, the start of a predetermined period is defined as when a predetermined number of images are captured from the start of imaging (example: when four images are completed), and the predetermined period is defined as several seconds (example: 10 seconds) from the completion of the imaging. .. The imaging control unit 15 controls the imaging unit 11 so as not to perform imaging for a predetermined period according to each of the monitoring (A) to (C).

By capturing a plurality of images by appropriately changing the imaging sensitivity, shutter speed, or imaging timing in this way, the hearth liner 24 having different brightness (the vapor deposition material MA contained in the hearth liner 24 or the electron beam EB irradiates the image. It is possible to acquire a plurality of images showing the thin-film deposition material MA).

An example of a plurality of images captured by the imaging unit 11 by changing the imaging settings will be described later.

Further, as the imaging unit 11, a CCD camera or the like can be mentioned. The imaging unit 11 is arranged at a position having a predetermined angle α from the perpendicular line (center line CL) passing through the center of the opening surface of the hearth liner 24 when it is in the normal position. By taking an image from this position, the monitoring device 1 can calculate the amount of inclination of the hearth liner 24 in various directions in the image of the hearth liner 24 captured by the imaging unit 11.

(Camera shutter)
Under the control of the image pickup control unit 15, the camera shutter 12 opens the front of the image pickup unit 11 at the timing when the image pickup unit 11 images the hearth liner 24, but closes the camera shutter 12 at other times. By this control, it is possible to prevent the scattered vapor deposition material MA from adhering to the lens (not shown) of the imaging unit 11 at a time other than the time of imaging. Further, a glass plate may be adhered to the front of the lens of the imaging unit 11 for the purpose of preventing the image.

(Notification unit)
The notification unit 13 performs various notifications to the worker who uses the monitoring system. For example, the notification unit 13 is controlled by the state determination unit 17, and the position of the hearth liner 24, the position of the molten metal of the vapor-deposited material MA on the hearth liner 24, or the irradiation position of the electron beam EB on the vapor-deposited material MA are normal. A warning is issued when the position is out of the correct position. The notification unit 13 is realized, for example, by a speaker that outputs various notifications by sound and / or a display device that outputs various notifications by images.

(Memory)
The storage unit 14 stores, for example, various control programs executed by the control unit 10, and is composed of, for example, a non-volatile storage device such as a hard disk or a flash memory. In the storage unit 14, for example, (1) a monitoring program indicating the process of monitoring processing, (2) data indicating an image captured by the imaging unit 11, and (3) a reference image to be compared with the captured image are stored in the storage unit 14. The data to be shown, (4) data showing the imaging setting, and (5) various threshold values (values defining a predetermined range) used for the determination process in the control unit 10 are stored. Examples of the imaging settings include the imaging position, imaging sensitivity, shutter speed, imaging timing, and the like of the imaging unit 11 in each of the monitoring (A) to (C). Further, the storage unit 14 includes a reference image DB 141 capable of registering (storing) a reference image.

(Example of reference image)
In this embodiment, a plurality of reference images are registered. As the reference image, it is necessary to provide an image suitable for selecting an image to be analyzed from at least a plurality of images. As a reference image, for example, the contour portion of the hearth liner 24, the position of the molten metal surface of the vapor deposition material MA (the boundary portion between the inner wall of the hearth liner 24 and the molten metal surface), or the electron beam EB irradiated on the molten metal surface is clearly reflected. An image is provided. Alternatively, an image capable of estimating the position of the contour portion, the boundary portion, or the electron beam EB by analyzing (processing) the reference image is provided as the reference image. In this case, the estimated position of the contour portion, the boundary portion, or the electron beam EB is associated with the reference image and stored in the storage unit 14.

In the present embodiment, as a plurality of reference images, for example, one reference image for each of the above monitoring (A) to (C) is registered in the reference image DB 141. In the case of (A) above, the position of the hearth liner 24 is monitored based on the contour portion of the hearth liner 24 reflected in the captured image, as will be described later. Therefore, it is preferable that the contour portion is clearly reflected in the reference image, and for example, an image in which a new Haasliner 24 is reflected is provided as a reference image. Further, in the case of (B) or (C), the molten metal surface position or irradiation position is monitored based on the boundary portion or irradiation position reflected in the captured image. Therefore, for example, an image in which the boundary portion or the irradiation position is clearly reflected is provided as a reference image.

In this way, when the reference image is set according to each of the monitoring (A) to (C), the contour portion and the boundary are set in the analysis target image selected as a result of comparison with the reference image. It is more likely that the location or irradiation position can be easily identified.

Also, as a plurality of reference images, for example,
(A) A reference image group including a plurality of reference images whose usage states of the hearth liner 24 are different from each other.
(B) A reference image group including a plurality of reference images in which the positions of the molten metal surfaces of the vapor deposition material MA supplied to the hearth liner 24 are different from each other.
(C) A reference image group including a plurality of reference images having different inclinations of the hearth liner 24 in a predetermined range with respect to a predetermined reference plane, and
(D) A reference image group including a plurality of reference images of the electron beam EB emitted from the electron beam source 21 having different irradiation positions on the hearth liner 24.
However, it may be registered in the reference image DB 141. An example of the reference image group of the above (a) to (d) is shown in FIG. In addition, each reference image may be in a state where the hearth liner 24 (and the vapor deposition material MA) is red-hot, for example.

FIG. 5A shows a reference image group corresponding to the above (a). In this example, the hearth liner 24 is used in a state in which the hearth liner 24 is hardly used (new), a state in which the vapor deposition material MA is attached to the inner wall of the hearth liner 24 (new used), and a state in which the vapor deposition material MA is used. Three types are prepared: a state in which the material leaks to the outside of the hearth liner 24 along the inner wall of the hearth liner 24 (a state in which "wetting" occurs) (used).

FIG. 5B shows a reference image group corresponding to the above (b). In this example, three types are prepared: a state in which the molten metal surface position is near the opening of the hearth liner 24 (a state in which the amount of the vapor deposition material MA (the amount of hot water) is large), a state in which the molten metal surface is near the middle, and a state in which the molten metal is near the bottom. Has been done.

FIG. 5 (c) shows a reference image group corresponding to the above (c). In this example, three types of reference images are prepared when the position of the hearth liner 24 is in the normal position. In the present embodiment, the predetermined reference surface is the surface of the turret 25, and the predetermined range is a range (number) such that the inclination of the virtual surface with respect to the surface of the turret 25 does not interfere with the vapor deposition process. It means that it is in the range of about °). In FIG. 5C, three types of reference images are prepared in this predetermined range when the inclination of the hearth liner 24 is 0 °, the hearth liner 24 is rising to the left, and the hearth liner 24 is rising to the right. Has been done. The upward movement to the left and the upward movement to the right will be described later.

In FIG. 5D, a reference image group corresponding to the above (d) is shown. In this example, three types of reference images are prepared in which the irradiation positions are the center of the hot water surface, the left side, and the right side.

The types of reference images in each reference image group may be two types or four or more types. For example, in FIG. 5C, a reference image in the case of rising toward the front and / or rising from the back (described later) may be prepared. Further, it is not always necessary that all of the above (a) to (d) are prepared, and it is sufficient that necessary reference image groups are prepared according to the monitoring target to be monitored by the monitoring device 1. In other words, at least one reference image group (a) to (d) above may be prepared.

(Control unit)
The control unit 10 comprehensively controls the monitoring device 1. Specifically, the control unit 10 accurately determines the state of the vapor deposition apparatus 2, and in order to perform notification according to the determination result or stop the vapor deposition process, the image pickup control unit 15, the image selection unit 16, and the control unit 10 A state determination unit 17 is provided.

The image pickup control unit 15 controls the image pickup unit 11. As described above, the image pickup control unit 15 causes the image pickup unit 11 to take an image a plurality of times in each of the monitoring (A) to (C). In each of the above monitoring (A) to (C), the imaging control unit 15 selects the imaging position, the imaging sensitivity, and the shutter speed of the imaging unit 11 set for each of the monitoring (A) to (C). To do. Further, in each of the above monitoring (A) to (C), the imaging control unit 15 activates a timer (not shown) after the completion of imaging of a predetermined number of images, and for each of the above monitoring (A) to (C). The time is set for a predetermined period, and the imaging of the imaging unit 11 is stopped. Then, when the timer notifies the elapse of a predetermined period, the imaging is restarted.

For example, in the monitoring of (A) above, the imaging control unit 15 confirms that the film formation rate is 0 (the vapor deposition material MA is not scattered) after the vapor deposition is completed. After the confirmation is completed (eg, about 2 to 3 minutes after the completion of vapor deposition), the image pickup control unit 15 changes the image pickup sensitivity in the order of "6", "5", "4" and "3". , Continuously image four times. The image pickup control unit 15 clocks a predetermined period (example: 10 seconds) set for the monitoring of the above (A), and interrupts the image pickup during this period. When the image pickup control unit 15 confirms the elapse of the predetermined period, the image pickup sensitivity is changed again in the order of "6", "5", "4" and "3", and image pickup is performed four times in succession. In this way, a total of eight images are acquired. The shutter speed is set to "1/60" or "1/120".

In the monitoring of (B) above, the imaging control unit 15 confirms that the film formation rate is 0 after the vapor deposition is completed. After the confirmation is completed, the image pickup control unit 15 changes the image pickup sensitivity to "6", "5", "4" and "3" in this order, and continuously takes images four times. After that, the image pickup control unit 15 clocks a predetermined period (example: 10 seconds) set for the monitoring of the above (B), and interrupts the image pickup during this period. When the image pickup control unit 15 confirms the elapse of the predetermined period, the image pickup sensitivity is changed again in the order of "6", "5", "4" and "3", and image pickup is performed four times in succession. In this way, a total of eight images are acquired. The shutter speed is set to "1/60" or "1/120".

In the monitoring of (C) above, the imaging sensitivity is set to "8", "7.5", "7", "6.5", "6", "5.5", "5", "4.5". In this order, images are taken eight times in succession. That is, in the present embodiment, the predetermined period set for the monitoring of the above (C) is 0 seconds. In this way, a total of eight images are acquired. The shutter speed is set to "1/60", "1/120" or "1/240".

In the present embodiment, the imaging for monitoring the above (A) and (B) is performed after the vapor deposition (main vapor deposition) is completed, and the hearth liner 24 and the vapor deposition material MA are red-heated by the vapor deposition. .. This red-hot state continues for about 5 minutes after the vapor deposition on the substrate 100 is completed and the irradiation of the electron beam EB is stopped. In the present embodiment, the above imaging is performed about 2 to 3 minutes after the stop. Further, the new Haasliner 24 tends to have a brighter image than the Haasliner 24 in which wetness occurs. In other words, when wetting occurs, the image tends to be dark because the vapor deposition material MA covers the inner wall thereof. In particular, when the vapor deposition material MA is a metal-based material such as aluminum or silver, it becomes significantly dark. Further, the brightness of the image also differs depending on the position of the molten metal of the vapor deposition material MA. When the molten metal level is high, the hearth liner 24 and the vapor deposition material MA are difficult to cool (the red hot state is easily maintained), while when the molten metal level is low, it is easy to cool.

As described above, in the monitoring of the above (A) and (B), in addition to being imaged in a red-hot state, the degree of red-hotness differs depending on the state of the hearth liner 24, the position of the molten metal, and the like. Therefore, depending on the situation, there is a possibility that an image that is too bright for the image analysis for extracting the contour portion or the boundary portion may be captured. In this case, in the captured image, the contour portion or the boundary portion becomes unclear (the contrast of the portion is lowered), and the contour portion or the boundary portion may not be acquired accurately.

Therefore, in the imaging in the above (A) and (B), the imaging sensitivity is set to the imaging for the monitoring of the above (C) performed after a while from the completion of the vapor deposition (in the state where the reddish heat due to the vapor deposition disappears). Compared, it is set low. Therefore, it can be expected to acquire an image with suppressed brightness. In addition, as time elapses, the red-hot state of the hearth liner 24 and the like subsides. By providing an imaging standby period for a predetermined period during a plurality of consecutive imagings, it can be expected that an image in which the red-hot state is suppressed can be acquired in the imaging after the predetermined period. It should be noted that a predetermined period may be provided a plurality of times in one continuous imaging.

On the other hand, as described above, it is expected that the hearth liner 24 and the like do not glow red in the imaging for monitoring in (C) as compared with the imaging in (A) and (B). Therefore, in the imaging in the above (C), the imaging sensitivity is set higher than in the imaging in the above (A) and (B).

By capturing a plurality of images in this way in each monitoring, it is possible to increase the possibility that the contour portion, the boundary portion, or the irradiation position can be acquired with high accuracy.

The above-mentioned imaging sensitivity, shutter speed, and setting of a predetermined period are merely examples. For the imaging sensitivity, the shutter speed, and the predetermined period, it is possible to select an analysis target image capable of analyzing the position, the molten metal surface position, or the irradiation position of the hearth liner 24 from a plurality of captured images in each monitoring. However, it may be set to any value. Further, the number of images captured in the monitoring of (A) to (C) in one vapor deposition process is not limited to eight, and may be changed as appropriate.

The image selection unit 16 selects an image having the highest correlation with the reference image as an analysis target image from a plurality of images captured by the image pickup unit 11.

Specifically, the image selection unit 16 calculates a correlation value indicating the degree of correlation of each image with respect to a reference image based on the pixel value of each image captured by the imaging unit 11. For the calculation of this correlation value, for example, a statistical method called normalization correlation is used in which the correlation value (similarity) between each of the above images and the reference image is calculated by using pattern matching.

In the normalized correlation, the correlation value is calculated by the following equation. In the following equation, I is the pixel value (brightness value) of each pixel in each of the above images, M is the pixel value of each pixel in the reference image, and n is the total number of pixels in each of the above images and the reference image. The bar (-) indicates the average value.

In the above formula, the more similar each of the above images is to the reference image, the closer the value is to 100 (%). In each of the monitoring (A) to (C), the image selection unit 16 selects the image having the closest correlation value of 100 among the plurality of captured images as the image to be analyzed. The target for calculating the correlation value may be the contour portion or the boundary portion in each image and the reference image. For example, when the image selection unit 16 selects the image to be analyzed by the correlation of the contour portion in the plurality of images and the reference image, the possibility of erroneous detection of the contour portion in the captured image can be suppressed. it can.

As described above, in the present embodiment, during the monitoring of the above (A) and (B), the hearth liner 24 or the vapor-deposited material MA in a red-hot state is imaged. In order to suppress this effect, in the monitoring device 1, first, the imaging unit 11 images a plurality of hearth liners 24 whose imaging sensitivity is changed at least. As a result, it is possible to acquire a plurality of images in which the hearth liner 24 or the vapor-deposited material MA having different brightness is reflected. Then, the image selection unit 16 can acquire a plurality of images having different brightness acquired by the imaging unit 11 and a reference image (the contour portion or the boundary portion) on which, for example, the red-hot hearth liner 24 or the vapor deposition material MA is reflected. Image) is compared with, and the image having the highest correlation with the reference image is selected. As a result, an image that is easy to analyze for determining the state of the vapor deposition apparatus 2 can be selected as the image to be analyzed. In the plurality of captured images, the image in which the contrast of the contour portion or the boundary portion is not reduced or the contrast reduction of the contour portion or the boundary portion is suppressed is selected as the image to be analyzed. It is possible to accurately determine the position of the liner 24 or the position of the molten metal.

Further, at the time of monitoring in (C) above, imaging is performed while irradiating the electron beam EB. Therefore, the brightness of the surrounding environment of the hearth liner 24 at the time of imaging tends to fluctuate, and due to the fluctuation, the irradiation position of the electron beam EB may become unclear, for example, in the captured image. Even in this case, the imaging unit 11 images a plurality of hearth liners 24 whose imaging sensitivity is at least changed. Then, the image selection unit 16 compares a plurality of images showing the vapor-deposited material MA having different brightness with a reference image in which the vapor-deposited material MA that is glowing red, for example, is shown, and the captured image having the highest correlation with the reference image. Select. As a result, similarly to the above, an image that is easy to analyze can be selected as the image to be analyzed, so that the determination of the irradiation position can be performed with high accuracy.

Further, when a predetermined period is provided, the image selection unit 16 may perform comparison with the reference image before and after the predetermined period. For example, in the case of the monitoring of (A) and (B) above, the image selection unit 16 compares the first four images with the reference image, and among the four images, the image having the highest correlation with the reference image is selected. Select one. After that, the image selection unit 16 compares the four images after the predetermined period with the reference image, and selects one of the four images having the highest correlation with the reference image. Then, the image selection unit 16 selects an image having a higher correlation with the reference image from the image selected from the four images before the predetermined period and the image selected from the four images after the predetermined period as the analysis target image. ..

Further, in the present embodiment, as described above, a plurality of reference images having different states of the hearth liner 24 are provided. Therefore, the image selection unit 16 selects the analysis target image from the plurality of images captured by the image pickup unit 11 by using the reference image selected from the plurality of reference images. The states of the hearth liner 24 include, for example, the usage state of the hearth liner 24, the position of the molten metal of the vapor deposition material MA in the hearth liner 24, the inclination of the hearth liner 24, and the electrons in the vapor deposition material MA in the hearth liner 24. The irradiation position of the beam EB can be mentioned.

The image selection unit 16 selects a reference image (reference image for selecting an analysis target image) for selecting an analysis target image, for example, by analyzing the acquired image. In this case, the image selection unit 16 calculates, for example, the luminance value of the region assumed to be near the contour portion, the inner wall, or the hot water surface of the hearth liner 24, and the luminance value of the region and the corresponding region in the reference image. Compare with the brightness value. The image selection unit 16 selects a reference image having a brightness value closest to the brightness value of the region acquired by analysis as a reference image for selecting an image to be analyzed.

Further, the image selection unit 16 may select a reference image for selecting an image to be analyzed by, for example, specifying the state of the hearth liner 24 based on the magnitude of the current value applied to the electron beam source 21. Good. In this case, the magnitude (range) of the current value and the plurality of reference images may be associated and stored in the reference image DB 141. The image selection unit 16 acquires a current value when the image pickup unit 11 acquires an image, and selects a reference image for selecting an image to be analyzed by referring to the reference image DB 141.

In this way, the image selection unit 16 can identify the rough state of the hearth liner 24 from the captured image or information such as the current value, and select a reference image for selecting the image to be analyzed. The image selection unit 16 performs the above analysis or acquisition of the current value for one of the acquired images (example: the first acquired image), but is not limited to this, and for a plurality of images. The above analysis or acquisition of the current value may be performed.

Further, in the image selection unit 16, for example, when one reference image is provided for each monitoring, the reference image used in each of the above monitoring (A) to (C) (corresponding to each monitoring). The reference image) is selected as the reference image for selecting the image to be analyzed. Further, the image selection unit 16 may select a reference image for selecting an image to be analyzed according to each of the monitoring (A) to (C).

In the present embodiment, the reference image groups (a) to (d) are provided as a plurality of reference images. Therefore, the image selection unit 16 selects an image to be analyzed from at least one of the reference image groups (a) to (d) according to each of the monitoring (A) to (C). A reference image may be selected.

Here, as the reference image group corresponding to each of the monitoring (A) to (C), an image in which a portion (eg, the contour portion, the boundary portion, or the irradiation position) required for each monitoring is clearly reflected is It is preferable that an image that is easily selected from a plurality of captured images is set. Further, in each monitoring, when a process using the reference image is performed on the selected image, it is preferable that the reference image group is selected in consideration of the process.

In the case of the monitoring of (A), it is preferable that an image capable of acquiring the contour portion (HL shown in FIG. 6) is selected from the captured image. Therefore, for example, the above (a) or (c) is set as the reference image group used by the image selection unit 16.

In the case of the monitoring of the above (B), it is preferable to select an image capable of acquiring the _{contour portion (ED b} shown in FIG. 7) and the boundary portion (ED _{f shown in FIG. 7) in the captured image.} .. Therefore, for example, the above (a) to (c) are set as the reference image group used by the image selection unit 16.

In the case of the monitoring of the above (C), it is preferable to select an image in which the molten metal surface position and the irradiation position can be acquired from the captured image. Therefore, for example, the above (b) or (d) is set as the reference image group used by the image selection unit 16.

In the state of being set in this way, the image selection unit 16 may, for example, respond to the monitoring of (A) to (C) above (in other words, according to the setting) from (a) to (d). ), At least one reference image group is selected, and a reference image for selecting an image to be analyzed is selected from the selected reference image group. When selecting the reference image for selecting the image to be analyzed, the image selection unit 16 may select the reference image by analyzing the acquired image or acquiring the current value in the same manner as described above. Further, a reference image selected in advance in the reference image group of the above (a) to (d) may be set. In this case, the image selection unit 16 uses the reference image for analysis target image selection. Select as the reference image for.

In this way, the image selection unit 16 selects one representative reference image that is assumed to have the highest correlation in each of the monitoring (A) to (C) above as a reference image for selecting the image to be analyzed. To do.

The state determination unit 17 determines the state of the vapor deposition apparatus 2 by analyzing the analysis target image selected by the image selection unit 16. In order to monitor the above (A) to (C), the state determination unit 17 includes a hearth liner position monitoring unit 171, a molten metal position monitoring unit 172, and an irradiation position monitoring unit 173.

The state determination unit 17 does not necessarily have to have all the functions of the hearth liner position monitoring unit 171, the molten metal position monitoring unit 172, and the irradiation position monitoring unit 173. The state determination unit 17 may have only one or two of these three functions. The state determination unit 17 need only have a function to be monitored by the monitoring device 1.

The hearth liner position monitoring unit 171 monitors the position of the hearth liner 24. Specifically, the hearth liner position monitoring unit 171 determines whether or not the position of the hearth liner 24 is in a normal position by analyzing the image captured by the imaging unit 11. For example, the hearth liner position monitoring unit 171 identifies the contour portion of the hearth liner 24 in the analysis target image and the reference image, calculates the correlation value between the contour portions of the specified hearth liner 24, and the correlation value is within a predetermined range. Determine if it is inside. In addition, the distance between two positions that are part of the contour portion and face each other is calculated, and it is determined whether or not the distance is within a predetermined range. Then, if the correlation value or the distance is within a predetermined range, it is determined that the position of the hearth liner 24 is in a normal position, while if it is out of the range, it is determined that the position is not normal.

As an example of determining that the position is not normal, as shown in FIG. 6, the state of the hearth liner 24 such as “backward rising”, “front rising”, “left rising” and “right rising” can be mentioned.

The “backward rise” refers to a state in which the upper side of the hearth liner 24 (the side closer to y = 0) is tilted toward the upper surface of the turret 25. The “front rising” refers to a state in which the lower side of the hearth liner 24 (the side away from y = 0 in the + y direction) is tilted toward the upper surface of the turret 25. “Upward to the left” refers to a state in which the left side of the hearth liner 24 (the side close to x = 0) is tilted toward the upper surface of the turret 25. “Rising to the right” refers to a state in which the right side of the hearth liner 24 (the side away from x = 0 in the + x direction) is tilted toward the upper surface of the turret 25.

Melt surface position monitoring unit 172 monitors the melt surface position location of the vapor deposition material MA, which is supplied to the hearth liner 24. Specifically, the molten metal position monitoring unit 172 detects the molten metal surface position by analyzing the image captured by the imaging unit 11, and determines whether or not the molten metal surface position is in a normal position. .. For example, as shown in FIG. 7, the molten metal position monitoring unit 172 detects a _{part ED b of the} contour portion and a part ED _{f of the boundary portion facing each other.} Then, the hot water surface position monitoring unit 172 calculates the distance D _{s between the partial ED b of the} contour portion and the partial ED _{f of the} boundary portion, and if the distance D _s is within a predetermined range, the hot water is used. It is determined that the surface position is in the normal position, while if it is out of the range, it is determined that the surface position is not normal.

Further, when the molten metal position monitoring unit 172 determines that the position is not normal and determines that the vapor deposition material MA in the hearth liner 24 is small, the vapor deposition material MA is supplied to the hearth liner 24. The amount is calculated, and data indicating the supply amount is transmitted to the material supply device 3. When the material supply device 3 receives the data, the material supply device 3 supplies the vapor-deposited material MA to the hearth liner 24 by the amount of the supply indicated by the data.

The irradiation position monitoring unit 173 monitors the irradiation position of the electron beam EB emitted from the electron beam source 21 at the hearth liner 24. Specifically, the irradiation position monitoring unit 173 detects the irradiation position by analyzing the image captured by the imaging unit 11 and determines whether or not the irradiation position is in a normal position. For example, as shown in FIG. 8, the irradiation position monitoring unit 173 sets the irradiation position IA ( It is specified as an irradiation area), and the center of gravity position CP of the irradiation position is specified. Then, the irradiation position monitoring unit 173 determines that the irradiation position IA is in the normal position if the center of gravity position CP is within the predetermined range, while determines that the irradiation position IA is in the abnormal position if it is out of the range. .. It should be noted that the determination as to whether or not the irradiation position becomes a normal position may be performed by comparing with a reference image in which the electron beam EB is projected at the normal position.

Further, when the irradiation position monitoring unit 173 is out of the range, the irradiation position monitoring unit 173 calculates a movement amount (correction amount) for moving the irradiation position to a normal position. Then, the irradiation position monitoring unit 173 causes the thin-film deposition apparatus 2 to change the irradiation position of the electron beam EB by the amount of the correction. In the thin-film deposition apparatus 2, the beam deflection magnet 22 and the pole piece 23 are controlled to correct the irradiation position so that the irradiation position becomes a normal position.

Further, when the state determination unit 17 determines in each monitoring that the position is not normal, it determines that an abnormality has occurred in the vapor deposition apparatus 2 and controls the notification unit 13 to issue a warning. .. Further, in the case of the determination, the state determination unit 17 stops the vapor deposition process by the thin film deposition apparatus 2. Specifically, the state determination unit 17 stops the power supply to each part of the vapor deposition apparatus 2 by the power source (not shown) of the vapor deposition apparatus 2.

In the case of the above determination, the state determination unit 17 does not necessarily have to execute both the warning notification and the power supply stop of the vapor deposition apparatus 2. For example, if the amount of deviation from the normal position is within a certain range, the state determination unit 17 may interfere with the vapor deposition process, and it is better to avoid executing the continuous vapor deposition process. It may be determined that it is in a state (a state requiring maintenance, so-called "minor failure"), and only a warning notification may be given. On the other hand, when the deviation amount exceeds a certain range, the state determination unit 17 not only hinders the vapor deposition process but also cannot guarantee the safety (so-called "serious failure"). Judgment is made, and at least the vapor deposition process is stopped.

(Example of captured image)
9 to 11 show an example of a plurality of images captured in each of the monitoring (A) to (C). FIG. 9 is an example of an image captured during the position monitoring of the hearth liner 24, FIG. 10 is an example of an image captured during the position monitoring of the molten metal, and FIG. 11 is an example of an image captured during the irradiation position monitoring. In FIGS. 9 to 11, the image surrounded by the diagonal line is the image selected by the image selection unit 16 as the image to be analyzed.

In the examples of FIGS. 9 and 10, images are taken at shutter speeds of "1/60" and "1/120". Further, in the example of FIG. 11, the case where the image is taken at the shutter speeds “1/60”, “1/120” and “1/240” is shown. However, in each monitoring, it is sufficient that any one of the above shutter speeds (example: "1/60") is set. In other words, in this example, it is sufficient that eight images having different imaging sensitivities and imaging timings can be acquired as a plurality of images.

However, in order to increase the possibility of selecting an image having a higher correlation with the reference image, in order to increase the number of multiple images to be compared with the reference image, the image corresponding to each of the plurality of shutter speeds is used in each monitoring. May be obtained. In other words, all of the images shown in FIGS. 9 to 11 may be compared with the reference image.

In the examples of FIGS. 9 and 10, the image selection unit 16 has the highest correlation regardless of whether the shutter speed is “1/60” or the shutter speed “1/120”. 1 is selected as the image to be analyzed. In the example of FIG. 11, the image selection unit 16 has the highest correlation value when the shutter speed is “1/60”. 2 is selected as the image to be analyzed, and when the shutter speeds are "1/120" and "1/240", the image No. having the highest correlation is obtained. 1 is selected as the image to be analyzed.

When two or more images can be selected as the image having the highest correlation among the eight images at each shutter speed, the image selection unit 16 uses a predetermined method to select one image to be analyzed. You may select an image. As the method, for example, among a plurality of images having the highest correlation, the image No. An example is a method in which the image with the smallest value (the image captured first) is used as the image to be analyzed.

≪Processing flow of monitoring system≫
Next, an example of the processing flow in the monitoring system will be described with reference to FIG. FIG. 12 is a flowchart showing an example of the processing flow in the monitoring system.

First, the vapor deposition apparatus 2 emits an electron beam EB from the electron beam source 21 and irradiates the vapor deposition material MA in the hearth liner 24 before vapor deposition the vapor deposition material MA on the substrate 100. (Processing step (hereinafter referred to as S) 1). Next, the thin-film deposition apparatus 2 evaporates the thin-film deposition material MA in the hearth liner 24 by irradiating the thin-film deposition material MA with the electron beam EB by increasing the light intensity, thereby forming a film (main vapor deposition) on the substrate 100. Do (S2).

Next, when the film forming process by the vapor deposition apparatus 2 is completed, the monitoring device 1 manages the molten metal level of the vapor deposition material MA in the hearth liner 24 after confirming the film formation rate 0 (S3; monitoring of (B) above). Corresponds to). Specifically, the molten metal position monitoring unit 172 sets the imaging setting for the molten metal position monitoring (spray surface position imaging setting). Under the control of the imaging control unit 15, the imaging unit 11 acquires a plurality of images under the imaging setting. The image selection unit 16 uses a reference image for monitoring the position of the molten metal to select an analysis target image suitable for monitoring the position of the molten metal from the plurality of images. Then, the hot water surface position monitoring unit 172 determines whether or not the hot water surface position is in a normal position by analyzing the analysis target image. When the molten metal position monitoring unit 172 determines that the molten metal surface position is in an abnormal position, the molten metal position monitoring unit 172 issues a warning notification from the notification unit 13 and / or stops the vapor deposition apparatus 2. Further, when the molten metal position monitoring unit 172 determines that the position is not normal and determines that the vapor deposition material MA in the hearth liner 24 is small, the vapor deposition material MA is supplied to the hearth liner 24. The amount is calculated, and data indicating the supply amount is transmitted to the material supply device 3.

Further, when the film forming process by the vapor deposition apparatus 2 is completed, the monitoring device 1 manages the position of the hearth liner 24 after confirming the film forming rate 0 (S4; corresponding to the monitoring of (A) above). The Haasliner position monitoring unit 171 starts the position management process after a predetermined period of time has elapsed after confirming the film formation rate 0 (eg, after a few seconds, but after the start of the molten metal level management). Even if the hearth liner position monitoring unit 171 receives a notification from the molten metal position monitoring unit 172 indicating that the imaging unit 11 has captured a plurality of images in the processing of S3, the position management process is started. Good.

The hearth liner position monitoring unit 171 first instructs the vapor deposition apparatus 2 to emit only photons from the filament of the electron beam source 21. Upon receiving the instruction, the thin-film deposition apparatus 2 causes the electron beam source 21 to function as an illumination light source. Further, the Haas liner position monitoring unit 171 switches the imaging setting from the molten metal position imaging setting to the imaging setting for position monitoring of the Haas liner 24 (Haas position imaging setting) before capturing a plurality of images. Under the control of the imaging control unit 15, the imaging unit 11 acquires a plurality of images under the imaging setting. The image selection unit 16 selects an analysis target image suitable for monitoring the position of the hearth liner 24 from the plurality of images by using the reference image for monitoring the position of the hearth liner 24. Then, the hearth liner position monitoring unit 171 determines whether or not the position of the hearth liner 24 is in a normal position by analyzing the analysis target image. When the hearth liner position monitoring unit 171 determines that the position of the hearth liner 24 is not normal, the hearth liner position monitoring unit 171 notifies the warning from the notification unit 13 and / or stops the vapor deposition apparatus 2.

Further, in the monitoring device 1, the hearth liner position monitoring unit 171 notifies the molten metal position monitoring unit 172 when the imaging of the plurality of images for the hearth liner position monitoring is completed. The molten metal position monitoring unit 172 switches the imaging setting from the hearth position imaging setting to the molten metal position imaging setting. The processing timing may be before imaging of the hearth liner 24 (before processing of S6 described later).

Further, in the process of S3, when the molten metal position monitoring unit 172 transmits the data indicating the supply amount to the material supply device 3, the material supply device 3 is the hearth liner 24 for which the supply amount is calculated. The vapor deposition material MA is supplied to (S5).

Next, when the supply process of the vapor-deposited material MA by the material supply device 3 is completed, the thin-film deposition apparatus 2 melts the vapor-deposited material MA in the hearth liner 24 in the same manner as in S1. When the melting process by the vapor deposition apparatus 2 is completed, the monitoring device 1 manages the molten metal level of the vapor deposition material MA in the hearth liner 24 (S6; corresponding to the monitoring in (B) above). This process is the same as the process by the molten metal position monitoring unit 172 in S3.

The treatment of S3 is performed to control the state of the molten metal after the film is formed on the substrate 100, and the treatment of S6 is performed to control the state of the molten metal after the vapor deposition material MA is supplied.

Further, in the monitoring device 1, the hot water surface position monitoring unit 172 notifies the irradiation position monitoring unit 173 to that effect when the imaging of the plurality of images for the hot water surface position monitoring is completed. The irradiation position monitoring unit 173 switches the imaging setting from the molten metal position imaging setting to the irradiation position monitoring imaging setting (irradiation position imaging setting). The processing timing may be before imaging of the hearth liner 24 (before processing of S7).

Next, the monitoring device 1 manages the irradiation position of the electron beam EB on the vapor-deposited material MA in the hearth liner 24 (S7; corresponding to the monitoring of (C) above). Specifically, the image pickup unit 11 takes a plurality of images under the control of the image pickup control unit 15 under the illumination position image pickup setting. The image selection unit 16 selects an analysis target image suitable for monitoring the irradiation position from the plurality of images by using the reference image for monitoring the irradiation position. Then, the irradiation position monitoring unit 173 determines whether or not the irradiation position is in a normal position by analyzing the analysis target image. When the irradiation position monitoring unit 173 determines that the irradiation position is in an abnormal position, the irradiation position monitoring unit 173 issues a warning notification from the notification unit 13 and / or stops the vapor deposition apparatus 2.

Further, in this case, the irradiation position monitoring unit 173 determines the correction amount according to the irradiation position, and transmits data indicating the correction amount to the vapor deposition apparatus 2. The thin-film deposition apparatus 2 corrects the irradiation position so that the irradiation position becomes a normal position based on the data.

Further, in the monitoring device 1, when the irradiation position monitoring unit 173 completes capturing a plurality of images for irradiation position monitoring, the irradiation position monitoring unit 172 notifies the molten metal position monitoring unit 172 to that effect. The molten metal position monitoring unit 172 switches the imaging setting from the irradiation position imaging setting to the molten metal position imaging setting. The processing timing may be before the next imaging of the Haasliner 24 (before the processing of S3).

The processing order of the hearth liner position monitoring unit 171, the molten metal position monitoring unit 172, and the irradiation position monitoring unit 173 is not limited to the above order.

≪Processing flow of monitoring device≫
Next, an example of the processing flow (monitoring method) in the monitoring device 1 will be described with reference to FIG. FIG. 13 is a flowchart showing an example of the processing flow in the monitoring device 1.

First, in each of the above monitoring (A) to (C) (each process of S3, S4, S6 and S7 in FIG. 12), the imaging control unit 15 controls the imaging unit 11 and sets it by the state determination unit 17. The Haas liner 24 is imaged a plurality of times with the set imaging settings (S11; imaging step). When the image pickup control unit 15 acquires a plurality of images, the image pickup control unit 15 notifies the image selection unit 16 to that effect.

Upon receiving the notification, the image selection unit 16 receives one reference image (reference image for selecting an image to be analyzed) corresponding to each of the above monitoring (A) to (C) from a plurality of reference images (reference image group). ) Is selected (S12). When one reference image associated with each monitoring is provided, the reference image is selected as the reference image for selecting the analysis target image. Then, the image selection unit 16 compares the plurality of captured images with the selected reference image in each monitoring, and calculates a correlation value for each image (S13). In each monitoring, the image selection unit 16 selects an image having the maximum correlation value (maximum correlation value) among the calculated correlation values as an image to be analyzed (S14; image selection step). The image selection unit 16 notifies the state determination unit 17 that the analysis target image has been selected.

The state determination unit 17 executes a process corresponding to each monitoring (processing by the hearth liner position monitoring unit 171, the molten metal position monitoring unit 172, or the irradiation position monitoring unit 173), so that the state of the vapor deposition apparatus 2 is normal. It is determined whether or not it is in a state (S15; state determination step). When the state determination unit 17 determines that the state of the vapor deposition apparatus 2 is normal in all of the monitoring (A) to (C) above (YES in S15), the state determination unit 17 ends the processing flow. On the other hand, when the state determination unit 17 determines that the state of the vapor deposition apparatus 2 is not normal in any of the monitoring (A) to (C) above (NO in S15), the notification unit 13 notifies the warning. (S16). Further, the state determination unit 17 stops the vapor deposition apparatus 2 in the case of a serious failure (S17).

≪Main effect≫
In the monitoring device 1, the imaging unit 11 images the hearth liner 24 a plurality of times. In addition, the imaging unit 11 changes at least one of the imaging sensitivity, the shutter speed, and the imaging timing to perform imaging. Therefore, it is possible to acquire a plurality of images having different brightness.

Then, the image selection unit 16 selects an image having the highest correlation with the reference image on which the hearth liner 24 is projected as the analysis target image from the plurality of images captured by the image pickup unit 11. Therefore, it is possible to select an image having a brightness that facilitates image analysis. The state determination unit 17 analyzes the analysis target image selected in this way to determine the state of the vapor deposition apparatus 2.

If an image that is too bright or too dark is captured when the image is captured only once and used as the analysis target image, it may not be possible to identify the analysis target such as the contour portion even if the image is analyzed. .. In this case, it is necessary to perform another imaging while adjusting the imaging settings. Further, as described above, since the degree of redness or the redness time of the hearth liner 24 and the vapor deposition material MA differs depending on the state of the hearth liner 24 or the position of the molten metal, it is possible to acquire an image that is too bright as an image to be analyzed. There is sex. In this case as well, it may not be possible to specify the analysis target.

On the other hand, according to the monitoring device 1, the image that is most easily analyzed can be selected as the image to be analyzed in consideration of the red-hot state. Therefore, as compared with the above case, it is possible to increase the possibility that the state of the vapor deposition apparatus 2 can be accurately determined without depending on the surrounding environment of the hearth liner 24. Further, according to the monitoring device 1, the possibility of re-imaging can be reduced. Therefore, it is possible to reduce the time and effort required for re-imaging.

[Embodiment 2]
The second embodiment of the present invention will be described as follows. For convenience of explanation, the same reference numerals will be added to the members having the same functions as the members described in the above embodiment, and the description thereof will be omitted.

In the first embodiment, the case where one reference image for selecting the analysis target image is selected from the plurality of reference images has been described, but a plurality of reference images may be selected.

For example, in each of the monitoring (A) to (C) above, the number of reference images for selecting the analysis target image to be selected is set to 2 or more in advance, and the image selection unit 16 uses the number of reference images as the reference. You may select an image. In this case, for example, the image selection unit 16 analyzes the acquired image as described in the first embodiment, and the brightness close to the brightness value of the region included in the image (example: the region assumed to be the contour portion). Select from the reference image having the value (the brightness value of the region in the reference image corresponding to the region) by the number set above. When selecting using the current value, the image selection unit 16 selects, for example, the reference image corresponding to the acquired current value, and sets the reference image corresponding to the value in the vicinity of the current value as described above. Select within the range that does not exceed the number.

Further, when a plurality of reference images are provided for each monitoring, a correlation value may be calculated for each of the plurality of captured images and each of the plurality of reference images in each monitoring. In other words, in this case, the correlation value between all the images captured by the imaging unit 11 and all the reference images stored in the reference image DB 141 is calculated.

Further, the image selection unit 16 may compare each of the images captured by the image pickup unit 11 with only a part of the plurality of reference images. For example, the image selection unit 16 selects a reference image to be compared with the image captured by the image pickup unit 11 from a plurality of reference images stored in the reference image DB 141 in response to each of the monitoring (A) to (C). You may.

For example, the image selection unit 16 captures at least one of the reference image groups (a) to (d) in each monitoring according to each of the monitoring (A) to (C). It may be selected as a plurality of reference images to be compared. As described in the first embodiment, when the reference image groups (a) to (d) are associated with each of the monitoring (A) to (C), the image selection unit 16 sets the image selection unit 16. Select the corresponding reference image group for each monitoring.

The image selection unit 16 compares each of the plurality of reference images selected as the reference image for selecting the analysis target image as described above with each of the plurality of images captured by the imaging unit 11, and calculates the correlation value of each. To do. Then, the image selection unit 16 selects the image having the highest correlation value among the calculated correlation values as the analysis target image. In other words, the image selection unit 16 selects, as the analysis target image, an image having the highest correlation with at least a part of each of the plurality of reference images from the plurality of images captured by the image pickup unit 11.

In this way, even when there are a plurality of reference images for selecting the image to be analyzed, as in the first embodiment, an image that is most likely to acquire a part required for image analysis in each monitoring can be obtained from the plurality of images. It can be selected as the image to be analyzed. Therefore, in each monitoring, the state of the vapor deposition apparatus 2 can be accurately determined. Further, since there are a plurality of reference images for selecting the image to be analyzed, the correlation between the image captured by the imaging unit 11 and the reference image can be confirmed more widely.

[Embodiment 3]
The third embodiment of the present invention will be described as follows. For convenience of explanation, the same reference numerals will be added to the members having the same functions as the members described in the above embodiment, and the description thereof will be omitted.

In the first and second embodiments, a plurality of reference images are registered in the reference image DB 141. Not limited to this, only one reference image common to the monitoring of the above (A) to (C) may be registered in the reference image DB 141.

As the image to be analyzed, the contour portion is accurate for the monitoring of (A), the contour portion and the boundary portion for the monitoring of (B), and the irradiation position is accurate for the monitoring of (C). It is preferable that an image that can be extracted is selected. Therefore, the reference image is preferably an image in which the contour portion, the boundary portion, and the irradiation position are clearly reflected. In this case, the reference image may be, for example, an image in which a new hearth liner 24 is reflected and an image in which an electron beam EB irradiated near the center of gravity of the molten metal surface position at a normal position is reflected.

Further, when the image selection unit 16 selects an image to be analyzed by, for example, the correlation between the contour portion of the hearth liner 24 in each captured image and the contour portion of the hearth liner 24 in the reference image, the above-mentioned in the reference image. It is preferable that the contour portion is clearly reflected. In this case, the reference image may be an image showing a new Haasliner 24.

In this way, even if there is only one registered reference image, it is possible to select an image from a plurality of images that is most likely to acquire a portion required for image analysis in each monitoring as an image to be analyzed. Therefore, in each monitoring, the state of the vapor deposition apparatus 2 can be accurately determined.

[Example of realization by software]
The control block of the monitoring device 1 (particularly, each functional block of the control unit 10) may be realized by a logic circuit (hardware) formed in an integrated circuit (IC chip) or the like, or a CPU (Central Processing Unit). It may be realized by software using it.

In the latter case, the monitoring device 1 is a CPU that executes instructions of a program that is software that realizes each function, a ROM (Read Only Memory) or a ROM (Read Only Memory) in which the program and various data are readablely recorded by a computer (or CPU). It is equipped with a storage device (referred to as a "recording medium"), a RAM (Random Access Memory) for developing the above program, and the like. Then, the object of the present invention is achieved by the computer (or CPU) reading the program from the recording medium and executing the program. As the recording medium, a "non-temporary tangible medium", for example, a tape, a disk, a card, a semiconductor memory, a programmable logic circuit, or the like can be used. Further, the program may be supplied to the computer via an arbitrary transmission medium (communication network, broadcast wave, etc.) capable of transmitting the program. It should be noted that one aspect of the present invention can also be realized in the form of a data signal embedded in a carrier wave, in which the above program is embodied by electronic transmission.

[Summary]
(1) In order to solve the above problems, the monitoring device according to one aspect of the present invention is a monitoring device that monitors a vapor deposition device that deposits a film on a substrate by depositing a vapor deposition material on the substrate. The reference is an image in which the container is projected from an imaging unit that takes a plurality of images of the container for holding the vapor deposition material provided in the vapor deposition apparatus and a plurality of images captured by the imaging unit. An image selection unit that selects the image having the highest correlation with the image as the analysis target image, a state determination unit that determines the state of the vapor deposition apparatus by analyzing the analysis target image selected by the image selection unit, and To be equipped.

According to the above configuration, the image having the highest correlation with the reference image is selected as the analysis target image from the images of the container captured a plurality of times. Then, the state of the vapor deposition apparatus is determined using the analysis target image. Therefore, it is possible to accurately determine the state of the vapor deposition apparatus.

(2) Further, in the monitoring device according to one aspect of the present invention, in the configuration of (1) above, the imaging unit may change at least one of the imaging sensitivity and the shutter speed each time the image is captured. Good.

In general, depending on the brightness of the container itself or its surroundings, the contrast of the container reflected in the captured image may decrease, making it difficult to compare with the reference image. According to the above configuration, since the imaging sensitivity and / or the shutter speed is changed each time an image is taken, containers having different brightness can be imaged. Therefore, it is possible to select an image of the container suitable for comparison with the reference image as the image to be analyzed.

(3) Further, in the monitoring device according to one aspect of the present invention, in the configuration of the above (2), a predetermined period during which the images are not captured is provided in the period from the start to the end of the acquisition of the plurality of images. It may have been.

According to the above configuration, by providing a predetermined period during which the image is not captured, it is possible to increase the possibility of acquiring an image of the container having a brightness suitable for comparison with the reference image.

(4) Further, in the monitoring device according to one aspect of the present invention, in the configuration of (2) or (3), the state determination unit is reflected in the analysis target image (A) the position of the container, (B). ) The molten film position of the vapor deposition material supplied to the container and (C) the irradiation position of the electron beam emitted from the beam emission source in the container are analyzed as analysis targets to obtain the vapor deposition apparatus. The state is determined, and the imaging unit may perform imaging at the imaging sensitivity and the shutter speed set according to the analysis target.

According to the above configuration, the container can be imaged at the imaging sensitivity and / or the shutter speed according to the analysis target of (A) to (C). In other words, it is possible to increase the possibility of acquiring an image of the container suitable for comparison with the reference image according to each analysis target.

(5) Further, in the monitoring device according to one aspect of the present invention, in any of the configurations (1) to (4), a plurality of reference images in which the states of the containers are different are provided. The selection unit may select the analysis target image from the plurality of images by using the reference image selected from the plurality of reference images.

According to the above configuration, the captured plurality of images can be compared with at least one of the plurality of reference images having different container states. Therefore, it is possible to select the image to be analyzed in consideration of the state of the container.

(6) Further, in the monitoring device according to one aspect of the present invention, in the configuration of (5) above, the plurality of reference images include (a) a plurality of reference images in which the usage states of the containers are different from each other. Group, (b) Reference image group including a plurality of reference images in which the positions of the molten metal of the vapor deposition material supplied to the container are different from each other, (c) A plurality of reference images having different inclinations of the container in a predetermined range with respect to a predetermined reference surface It is at least one of a reference image group including a reference image and (d) a reference image group including a plurality of reference images having different irradiation positions in the container of the electron beam emitted from the beam emission source. You may.

According to the above configuration, the captured image can be compared with at least one of the reference image groups (a) to (d). It is possible to select the image to be analyzed in consideration of the usage state of the container, the position of the molten metal of the vapor deposition material, the inclination of the container, or the irradiation position of the electron beam.

(7) Further, in the monitoring device according to one aspect of the present invention, in the configuration of (6) above, the state determination unit is reflected in the image to be analyzed (A) the position of the container, and (B) the container. The state of the vapor deposition apparatus is determined by analyzing either the molten metal surface position of the supplied vapor deposition material or the irradiation position of the electron beam emitted from the beam emission source in the container (C) as an analysis target. The image selection unit selects a reference image to be used when selecting the analysis target image from at least one of the reference image groups (a) to (d) according to the analysis target. You may choose.

According to the above configuration, a reference image included in at least one of the reference image groups of the above (a) to (d) is selected and captured according to the analysis target of the above (A) to (C). Can be compared with. Therefore, it is possible to accurately determine the state of the vapor deposition apparatus for each analysis target.

(8) Further, the monitoring method according to one aspect of the present invention is a monitoring method for monitoring a vapor deposition apparatus that deposits a film on the substrate by depositing a vapor deposition material on the substrate, and the vapor deposition apparatus is provided. The correlation between the imaging step of performing multiple imaging with the container for holding the thin-film deposition material as the subject and the reference image which is the image of the container from the plurality of images captured in the imaging step is the highest. It includes an image selection step of selecting an image as an image to be analyzed and a state determination step of determining the state of the vapor deposition apparatus by analyzing the analysis target image selected in the image selection step.

According to the above method, the same effect as that of the configuration of the above (1) is obtained.

The monitoring device according to each aspect of the present invention may be realized by a computer. In this case, the monitoring device is operated by the computer by operating the computer as each part (software element) included in the monitoring device. The monitoring control program of the monitoring device to be realized and the computer-readable recording medium on which the monitoring device is recorded also fall within the scope of the present invention.

[Additional notes]
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments. Is also included in the technical scope of the present invention.

1 Monitoring device 2 Thin-film deposition device 11 Imaging unit 16 Image selection unit 17 State determination unit 21 Electron beam source (beam emission source)
24 Haas liner (container)
100 Substrate EB electron beam IA irradiation position MA vapor deposition material

Claims (7)

A monitoring device that monitors a thin-film deposition device that deposits a film on a substrate by depositing a vapor-deposited material on the substrate.
An imaging unit provided with the vapor deposition apparatus, which captures images a plurality of times with a container for holding the vapor deposition material as a subject.
An image selection unit that selects, as an analysis target image, an image having the highest correlation with a reference image, which is an image of the container, from a plurality of images captured by the image pickup unit.
A state determination unit for determining the state of the vapor deposition apparatus by analyzing the analysis target image selected by the image selection unit is provided .
The imaging unit, the monitoring device according to claim be relocated at least one of the imaging sensitivity and shutter speed every capturing the image. The monitoring device according to claim 1 , wherein a predetermined period during which no image is captured is provided in the period from the start to the end of the acquisition of the plurality of images. The state determination unit emits from (A) the position of the container, (B) the position of the molten metal of the vapor-deposited material supplied to the container, and (C) the beam emission source in the container. The state of the vapor deposition apparatus is determined by analyzing any of the irradiation positions of the electron beam as an analysis target.
The monitoring device according to claim 1 or 2 , wherein the imaging unit performs imaging at the imaging sensitivity and the shutter speed set according to the analysis target. A monitoring device that monitors a thin-film deposition device that deposits a film on a substrate by depositing a vapor-deposited material on the substrate.
An imaging unit provided with the vapor deposition apparatus, which captures images a plurality of times with a container for holding the vapor deposition material as a subject.
An image selection unit that selects, as an analysis target image, an image having the highest correlation with a reference image, which is an image of the container, from a plurality of images captured by the image pickup unit.
A state determination unit for determining the state of the vapor deposition apparatus by analyzing the analysis target image selected by the image selection unit is provided.
A plurality of the above reference images in which the state of the container is different are provided.
The image selection unit includes a plurality of using the reference image selected from the reference image, monitoring device you and selects the image to be analyzed from the plurality of images. The above multiple reference images are
(A) A reference image group including a plurality of reference images in which the usage states of the containers are different from each other.
(B) A reference image group including a plurality of reference images in which the positions of the molten metal of the vaporized material supplied to the container are different from each other.
(C) A reference image group including a plurality of reference images having different inclinations of the container in a predetermined range with respect to a predetermined reference surface, and
(D) A reference image group containing a plurality of reference images of electron beams emitted from a beam emitting source having different irradiation positions in the container.
The monitoring device according to claim 4 , wherein the monitoring device is at least one of. The state determination unit emits from (A) the position of the container, (B) the position of the molten metal of the vapor-deposited material supplied to the container, and (C) the beam emission source in the container. The state of the vapor deposition apparatus is determined by analyzing any of the irradiation positions of the electron beam as an analysis target.
The image selection unit selects a reference image to be used when selecting the analysis target image from at least one of the reference image groups (a) to (d) according to the analysis target. The monitoring device according to claim 5. It is a monitoring method that monitors a vapor deposition apparatus that deposits a film on a substrate by depositing a vapor deposition material on the substrate.
An imaging process in which a container for holding the vapor-deposited material provided in the vapor deposition apparatus is used as a subject and multiple imaging is performed.
An image selection step of selecting an image having the highest correlation with a reference image, which is an image of the container, as an image to be analyzed from a plurality of images captured in the imaging step.
By analyzing the analysis target image selected by the image selection process, see containing and a state determining step of determining a state of the vapor deposition apparatus,
A monitoring method characterized in that at least one of the imaging sensitivity and the shutter speed is changed each time the image is captured in the imaging step.

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