JP6861622B2 - Semiconductor equipment and power conversion equipment - Google Patents

Description

The present invention relates to a semiconductor device in which an electronic component including a semiconductor element is sealed by a resin sealant in a container, and a power conversion device including the semiconductor device.

In the semiconductor device of Patent Document 1, the substrate is mounted on the metal base plate of the container body including the case and the metal base plate. Then, an external lead-out terminal connected to the metal pattern on the substrate or the surface electrode of the semiconductor element on the substrate is pulled out above the case. In addition, a resin sealant is disposed inside the container.

Japanese Unexamined Patent Publication No. 2003-066979

For example, when a semiconductor device is used in a wide range of temperatures, the container body shrinks and the gap between the external lead-out terminal and the case becomes extremely narrow. When these phenomena occur, the resin encapsulant may crawl up the external outlet terminal or case. As a result, there is a problem that the resin encapsulant crawls up to the upper part of the semiconductor device and the possibility of leaking to the outside of the semiconductor device increases.

Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of suppressing the resin encapsulant from creeping up.

The semiconductor device according to the present invention includes a container body having a bottom portion and a side wall portion, an electronic component including a semiconductor element mounted on the bottom portion in the container body, and one or more electronic components drawn upward from the electronic component. A conductive member and a resin sealant disposed in the container and sealing the electronic component are provided, and the conductive member is two or more bends located above the upper surface of the resin sealant. Includes a bent conductive member having a portion. A restraining structure for suppressing the creeping up of the resin sealing agent is disposed on a portion of the inner wall portion of the side wall portion located above the upper surface of the resin sealing agent, and the restraining structure has a protruding portion. At least one of a concave portion and a convex portion is disposed on at least one of the upper surface, the lower surface, and the side surface of the protruding portion, and the protruding portion straddles the inner wall portion of the side wall portion and the side surface of the conductive member. Are arranged.

According to the present invention, the conductive member includes a bent conductive member having two or more bent portions located above the upper surface of the resin encapsulant. According to such a configuration, it is possible to prevent the resin encapsulant from creeping up.

It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the structure of the related semiconductor device. It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 2. It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 3. FIG. It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 4. FIG. It is sectional drawing which shows another structure of the semiconductor device which concerns on Embodiment 4. FIG. It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 5. It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 6. It is sectional drawing which shows another structure of the semiconductor device which concerns on Embodiment 6. It is a top view which shows the structure of the semiconductor device which concerns on Embodiment 7. It is sectional drawing which shows the structure of the semiconductor device which concerns on Embodiment 8. It is a top view which shows the structure of the semiconductor device which concerns on Embodiment 8. It is a top view which shows the structure of the semiconductor device which concerns on modification 1 of Embodiment 8. It is a top view which shows the structure of the semiconductor device which concerns on modification 2 of Embodiment 8. It is a block diagram which shows the structure of the power conversion system to which the power conversion apparatus which concerns on Embodiment 9 is applied.

<Embodiment 1>
FIG. 1 is a cross-sectional view showing the configuration of the semiconductor device according to the first embodiment of the present invention. The semiconductor device according to the first embodiment includes a container body 1, an electronic component 2, one or more external lead-out terminals 3, and a resin encapsulant 4.

The container body 1 has a bottom portion and a side wall portion. In the first embodiment, the bottom portion is a metal base plate 11, and the side wall portion is a case 12 arranged on the metal base plate 11.

A restraining structure is provided on the inner wall portion of the case 12 located above the upper surface of the resin sealant 4. The restraining structure means that the resin encapsulant 4 crawls up the inner wall portion of the case 12 and reaches the upper part of the semiconductor device, that is, the resin encapsulant 4 crawls up in the case 12 (hereinafter, “case crawling up”). It is a structure that suppresses). In the first embodiment, the restraining structure is an eaves portion 12a, which is a protruding portion of an inner wall portion of the case 12 and is a part of the case 12.

The electronic component 2 is mounted on the bottom of the container body 1. The electronic component 2 according to the first embodiment includes a substrate 21, a metal pattern 22, and a semiconductor element 23. The substrate 21 is mounted on the upper surface of the metal base plate 11, and the metal pattern 22 and the semiconductor element 23 are arranged on the substrate 21.

The external lead-out terminal 3 is a conductive member drawn upward from the electronic component 2. In the first embodiment, one or more external lead-out terminals 3 include a multi-bend number terminal 31 which is a bending conductive member and a multi-bending number terminal 32 which is a bending conductive member. The definitions of the multi-bend terminals 31 and 32 will be described later. Here, the multi-bent terminal 31 is electrically connected to the metal pattern 22 which is an electronic component 2, and is pulled out from the metal pattern 22 above the case 12. The multi-bent terminal 32 is electrically connected to a surface electrode (not shown) of the semiconductor element 23 which is an electronic component 2, and is drawn out from the semiconductor element 23 above the case 12.

The resin sealant 4 is disposed in the container body 1 and seals the electronic component 2.

Each of the multi-bent terminals 31 and 32 has two or more bent portions located above the upper surface 4a of the resin sealant 4.

Specifically, the multi-bent terminal 31 has five bent portions (bent portions 31a, 31b, 31c, 31d, 31e) located above the upper surface 4a of the resin encapsulant 4. Each of the bent portions 31a to 31e of the multi-bent terminal 31 is an L-shaped bent portion included in the S-shape.

The multi-bent terminal 32 has three bent portions (bent portions 32a, 32b, 32c) located above the upper surface 4a of the resin sealant 4. It should be noted that each of the bent portions 32a to 32c of the multi-bent terminal 32 is an L-shaped bent portion that is different from each other.

Hereinafter, among the external lead-out terminals 3, the external lead-out terminals having two or more bent portions located above the upper surface 4a of the resin encapsulant 4 are referred to as "multi-bend number terminals", and the other external lead-out terminals are referred to as It will be described as "small bending number terminal". The portion of the multi-bent terminal located above the upper surface 4a of the resin encapsulant 4 is not limited to being bent into an S-shape or an L-shape, and is bent into a U-shape, for example. May be done.

FIG. 2 is a cross-sectional view showing a configuration of a semiconductor device (hereinafter referred to as “related semiconductor device”) related to the semiconductor device according to the first embodiment. The related semiconductor device includes not a multi-bend terminal but a small-bend terminal as the external lead-out terminal 3. Except for this point, the configuration of the related semiconductor device is the same as the configuration of the semiconductor device according to the first embodiment.

The small number of bend terminals 33 and 34 have one bent portion that is not immersed in the resin encapsulant 4, but do not have another bent portion that is not immersed in the resin encapsulant 4. In such a configuration of FIG. 2, the creepage distance until the resin encapsulant 4 crawls up the terminals 33 and 34 with a small number of bends and reaches the upper part of the semiconductor device is relatively short. Therefore, the resin encapsulant 4 crawls up the external lead-out terminal 3 and reaches the upper part of the semiconductor device, that is, the resin encapsulant 4 crawls up at the external lead-out terminal 3 (hereinafter referred to as “terminal crawl”). ), The resin encapsulant 4 may reach the upper part of the semiconductor device.

On the other hand, according to the semiconductor device according to the first embodiment, since the multi-bent terminals 31 and 32 have two or more bent portions that are not immersed in the resin encapsulant 4, the creepage distance is long. can do. Therefore, it is possible to suppress the possibility that the resin encapsulant 4 leaks to the outside of the case 12 and eventually to the outside of the semiconductor device due to the terminal crawling up.

In the configuration in which the gap 31f between the arranged portions of the multi-bent terminal 31 is narrowed, the effect that the resin encapsulant 4 is trapped in the gap 31f due to the capillary phenomenon can be obtained. According to such a configuration, the effect of suppressing the terminal crawling can be enhanced.

Further, according to the first embodiment, not only the terminal creeping up due to the surface tension of the material such as the resin encapsulant 4 is suppressed, but also when the resin encapsulant 4 is injected or the resin encapsulant 4 is injected. It is also possible to suppress the jumping of the resin encapsulant 4 due to the bursting of the expanded bubbles in the upper part of the resin encapsulant 4 at the time of the subsequent defoaming under reduced pressure.

The above-mentioned semiconductor element 23 may be composed of silicon (Si) or a wide bandgap semiconductor such as silicon carbide (SiC) and gallium nitride (GaN). In particular, since the wide bandgap semiconductor has high temperature resistance, in a configuration in which the semiconductor element 23 of the semiconductor device is composed of a wide bandgap semiconductor, as described above, the terminal creeping up is suppressed and the semiconductor element 23 can be used at a high temperature. Is particularly effective. Further, the semiconductor element 23 may be, for example, a MOSFET, an IGBT, an SBD, a PN diode, or the like.

<Embodiment 2>
FIG. 3 is a cross-sectional view showing the configuration of the semiconductor device according to the second embodiment of the present invention. Hereinafter, among the components according to the second embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described.

In the second embodiment, at least one of the concave portion and the convex portion is arranged on at least one of the upper surface, the lower surface, and the side surface of the eaves portion 12a which is the restraining structure. In FIG. 3, as an example thereof, a hook portion 12a1 which is a return portion protruding downward is provided at the tip of the eaves portion 12a, and the upper surface groove 12a2, the lower surface groove 12a3, and the lower surface groove 12a3 Side grooves 12a4 are arranged respectively. Various shapes such as a V-shape, a rectangular shape, and a semicircular shape can be applied to the cross-sectional shape of these grooves.

According to the semiconductor device according to the second embodiment as described above, it is possible to suppress the case crawling up and the possibility that the resin encapsulant 4 leaks to the outside of the case 12.

For example, the lower surface groove 12a3 and the side surface groove 12a4 can suppress the case crawling up, and the upper surface groove 12a2 suppresses the resin sealing agent 4 from leaking to the outside of the case 12 beyond the eaves portion 12a. can do. Further, as another effect of the upper surface groove 12a2, it is possible to check for leakage and bleeding of the resin encapsulant 4 without disassembling the semiconductor device during operation of the semiconductor device.

Further, according to the second embodiment, when the resin encapsulant 4 contains a low molecular weight component such as a silicone gel or an elastomer, and the semiconductor device is operated vertically, the low molecular weight component is at a high temperature. It is possible to suppress the phenomenon of liquefaction and bleeding to the outside of the semiconductor device. In addition, a specified amount of the resin encapsulant 4, and thus the insulating property can be ensured. Further, it can be expected that the resin encapsulant 4 is suppressed from adhering to the back surface of the metal base plate 11, and the heat dissipation of the semiconductor device can be expected to be ensured.

<Embodiment 3>
FIG. 4 is a cross-sectional view showing the configuration of the semiconductor device according to the third embodiment of the present invention. Hereinafter, among the components according to the third embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described.

In the third embodiment, as a restraining structure, a crawling restraining component 51 is arranged instead of the eaves portion 12a. At least one of the upper surface, the lower surface, and the side surface of the creep-up suppressing component 51 is provided with at least one of a concave portion and a convex portion, as in the eaves portion 12a of the second embodiment. The difference between the eaves portion 12a and the crawling suppression component 51 of the second embodiment is that the eaves portion 12a is a part of the case 12, but the crawling suppression component 51 is mounted on the case 12. 12 is a point that it is an individual part.

As shown in FIG. 4, in the third embodiment, the small bending number terminal 35, which is the external lead-out terminal 3, is electrically connected to the surface electrode (not shown) of the semiconductor element 23, and is above the case 12 from the semiconductor element 23. Has been pulled out to.

A creep-up suppressing component 52 is arranged as a protrusion on the side surface of the terminal 35 having a small number of bends and located above the upper surface of the resin encapsulant 4. At least one of the upper surface, the lower surface, and the side surface of the crawling suppressing component 52 is provided with at least one of a concave portion and a convex portion, similarly to the crawling suppressing component 51. Further, the crawling suppression component 52 is a component separate from the small bending number terminal 35, and is mounted on the small bending number terminal 35.

According to the semiconductor device according to the third embodiment as described above, by mounting the crawling suppression component 52 on the small bending number terminal 33, the terminal crawling can be suppressed even with the small bending number terminal 33. Can be done. Therefore, the bending cost of the external lead-out terminal 3 can be reduced, and the electrical characteristics can be improved by relaxing the reactance component caused by the bending process. Further, the case assembleability can be improved and the production cost can be expected to be reduced by making the parts such as the crawling suppression component 51 mounted on the case 12.

The configuration of the third embodiment is not limited to the configuration of FIG. For example, the creep-up suppression component may be mounted on the multi-bend terminal 32 instead of the low-bend terminal 35. That is, regardless of the number of bending terminals and the number of bending terminals, it is sufficient that the external lead-out terminal 3 is equipped with a creep-up suppressing component. Further, a part of the external lead-out terminal 3 may have the same shape as the creep-up suppressing component. Further, the creep-up suppressing component may be mounted on one of the case 12 and the external lead-out terminal 3 instead of both of the case 12 and the external lead-out terminal 3.

<Embodiment 4>
FIG. 5 is a cross-sectional view showing the configuration of the semiconductor device according to the fourth embodiment of the present invention. Hereinafter, among the components according to the fourth embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described. In the configuration after the fourth embodiment, although not shown, the multi-bend terminal described in the first embodiment may be provided, and as shown, the multi-bend terminal described in the first embodiment may be provided. It may be omitted.

In the fourth embodiment, the small bending number terminal 36, which is the external lead-out terminal 3, is electrically connected to the metal pattern 22 and is drawn out from the metal pattern 22 above the case 12. Further, the small bending number terminal 37, which is the external lead-out terminal 3, is electrically connected to a surface electrode (not shown) of the semiconductor element 23, and is pulled out from the semiconductor element 23 above the case 12.

Then, in the configuration shown in FIG. 5, the climbing suppressing component 53 in which the climbing suppressing components 51 and 52 of FIG. 4 described in the third embodiment are integrated is the inner wall portion of the case 12 and the terminals 36 and 37 with a small number of bends. It is arranged so as to straddle the side surface of the. The creep-up suppressing component 53 in FIG. 5 is arranged so as to straddle the inner wall portion of the case 12 and the side surfaces of the terminals 36 and 37 with a small number of bends, but the present invention is not limited to this. For example, the creep-up suppressing component may be arranged so as to straddle the inner wall portion of the case 12 and the side surface of the multi-flex terminal.

FIG. 6 is a cross-sectional view showing another configuration of the semiconductor device according to the fourth embodiment. In the configuration shown in FIG. 6, the eaves portion 12b similar to the eaves portion 12a (FIG. 3) described in the second embodiment is arranged across the inner wall portion of the case 12 and the side surfaces of the small bending number terminals 36 and 37. It is set up. The eaves portion 12b in FIG. 6 is arranged so as to straddle the inner wall portion of the case 12 and the side surfaces of the terminals 36 and 37 with a small number of bends, but the present invention is not limited to this. For example, the creep-up suppressing component may be arranged so as to straddle the inner wall portion of the case 12 and the side surface of the multi-flex terminal.

According to the semiconductor device according to the fourth embodiment as described above, the resin encapsulant 4 crawls up the external lead-out terminal 3 or the case 12 to the upper part of the semiconductor device, as compared with the second and third embodiments. The creepage distance to reach is long. Therefore, the leak suppressing effect of the resin encapsulant 4 can be enhanced. Further, since the number of parts can be reduced as compared with the second and third embodiments, the work man-hours can be reduced and the production cost can be reduced.

<Embodiment 5>
FIG. 7 is a cross-sectional view showing the configuration of the semiconductor device according to the fifth embodiment of the present invention. Hereinafter, among the components according to the fifth embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described.

In the fifth embodiment, the case 12 has a stepped portion including a low first upper surface 12c on the inside and a high second upper surface 12d on the outside. The restraining structure according to the fifth embodiment is a pool structure 12e which is a recess which is arranged on the first upper surface 12c inside the stepped portion and opens upward. The opening at the top of the pool structure 12e is wider than the bottom at the bottom of the pool structure 12e.

According to the semiconductor device according to the fifth embodiment as described above, the resin encapsulant 4 crawling up the case 12 can be trapped by the pool structure 12e. Further, by enlarging the opening of the pool structure 12e, the effect of trapping the resin encapsulant 4 and the effect of suppressing leakage of the resin encapsulant 4 can be obtained. Further, by making the bottom surface of the pool structure 12e narrower than the opening of the pool structure 12e, it is possible to secure a decrease in the strength of the case 12 which is a demerit when the opening is enlarged. It is possible to suppress damage. Further, according to the fifth embodiment, the degree of freedom inside the container body 1 and the degree of freedom in design can be increased as compared with the structure in which the eaves portion 12a is arranged.

<Embodiment 6>
FIG. 8 is a cross-sectional view showing the configuration of the semiconductor device according to the sixth embodiment of the present invention, and FIG. 9 is a cross-sectional view showing another configuration of the semiconductor device according to the sixth embodiment of the present invention. Hereinafter, among the components according to the sixth embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described.

In the sixth embodiment, the restraining structure is at least one of a mirror surface, a rough surface, and an uneven surface formed by the surface treatment. 8 and 9 show a concave portion 12f on an uneven surface as an example of a restraining structure. Various shapes such as a triangular shape, a rectangular shape, and a semicircular shape can be applied to the cross-sectional shape of the recess 12f.

Although not shown, at least one of a mirror surface, a rough surface, and an uneven surface is arranged in a linear shape (for example, a border shape) extending in the lateral direction in a plan view (arrow view A) of the inner wall portion. ..

According to the semiconductor device according to the sixth embodiment as described above, at least one of a mirror surface, a rough surface, and an uneven surface is arranged on the inner wall portion of the case 12 as described above, thereby sealing the resin. The leak suppressing effect of the agent 4 can be obtained. For example, when a rough surface or an uneven surface is arranged on the inner wall portion of the case 12, the resin encapsulant 4 concentrates on the rough surface portion or the concave portion due to the capillary phenomenon and spreads wet. Therefore, in the configuration in which the rough surface or the uneven surface extends in the lateral direction in the plan view of the inner wall portion, the resin encapsulant 4 wets and spreads in the lateral direction. Therefore, it is possible to obtain the effect of suppressing leakage of the resin sealant 4 due to the crawling of the case.

<Embodiment 7>
FIG. 10 is a plan view showing the configuration of the semiconductor device according to the seventh embodiment of the present invention. Hereinafter, among the components according to the seventh embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described.

In the seventh embodiment, as in the sixth embodiment, at least one of a mirror surface, a rough surface, and an uneven surface is arranged on the inner wall portion of the case 12. However, in the seventh embodiment, at least one of the mirror surface, the rough surface, and the uneven surface is arranged in a curved shape extending in the lateral direction in the plan view of the inner wall portion. In FIG. 10, as an example, a concave portion 12g of a concave-convex surface arranged in a curved shape extending in the lateral direction is shown.

According to the semiconductor device according to the seventh embodiment as described above, the length of the line in which the resin encapsulant 4 wets and spreads, and by extension, the resin encapsulant 4 gets wet as compared with the semiconductor device according to the sixth embodiment. The size of the expanding area can be increased. Therefore, the effect of suppressing leakage of the resin sealant 4 due to the case crawling can be enhanced.

<Embodiment 8>
FIG. 11 is a cross-sectional view showing the configuration of the semiconductor device according to the eighth embodiment of the present invention. Hereinafter, among the components according to the eighth embodiment, the components that are the same as or similar to the above-mentioned components are designated by the same reference numerals, and different components will be mainly described.

In FIG. 11, the eaves portion 12a, the crawling suppression component 51, the uneven surface, and the like are simplified and shown as the suppression structure 6. FIG. 12 is a top view showing the configuration of the semiconductor device according to the eighth embodiment in the top view (arrow view B in FIG. 11). As shown in FIG. 12, in the eighth embodiment, the restraint structure 6 is arranged on the entire inner circumference of the case 12 when viewed from above. According to such a configuration, it is possible to suppress the case crawling from the entire inner circumference of the case 12.

<Modification example 1>
FIG. 13 is a top view showing the configuration of the semiconductor device according to the first modification of the eighth embodiment. As shown in FIG. 13, in the present modification 1, the inner peripheral shape of the case 12 in the top view includes corners, and the restraining structure 6 is arranged only in the corners where the resin encapsulant 4 easily crawls up. ing. According to such a configuration, the mold forming the case 12 can be simplified, and the mold processing cost can be reduced.

<Modification 2>
FIG. 14 is a top view showing the configuration of the semiconductor device according to the second modification of the eighth embodiment. As shown in FIG. 14, in the present modification 2, the inner peripheral shape of the case 12 in the top view includes a straight portion, and the restraining structure 6 has a straight portion in which the resin sealant 4 before the effect is likely to leak. It is arranged only in. According to such a configuration, the mold forming the case 12 can be simplified, and the mold processing cost can be reduced.

<Embodiment 9>
The power conversion device according to the ninth embodiment of the present invention is a power conversion device including a main conversion circuit having the semiconductor device according to any one of the first to eighth embodiments. The semiconductor device described above is not limited to the specific power conversion device, but hereinafter, as the ninth embodiment, the semiconductor device according to any one of the first to eighth embodiments is used in the three-phase inverter. The case where it is applied will be described.

FIG. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the ninth embodiment is applied.

The power conversion system shown in FIG. 15 includes a power supply 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source, and supplies DC power to the power converter 200. The power supply 100 can be configured by various power sources, for example, it may be composed of a DC system, a solar cell, a storage battery, or may be composed of a rectifier circuit or an AC / DC converter connected to an AC system. Good. Further, the power supply 100 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

The power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300, converts the DC power supplied from the power supply 100 into AC power, and supplies AC power to the load 300. As shown in FIG. 15, the power conversion device 200 has a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201. And have.

The load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200. The load 300 is not limited to a specific application, and is an electric motor mounted on various electric devices. For example, the load 300 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner.

The details of the power converter 200 will be described below. The main conversion circuit 201 includes a switching element and a freewheeling diode (not shown), and when the switching element switches, the DC power supplied from the power supply 100 is converted into AC power and supplied to the load 300. There are various specific circuit configurations of the main conversion circuit 201, but the main conversion circuit 201 according to the ninth embodiment is a two-level three-phase full bridge circuit, and has six switching elements and their respective switching. It can be composed of six freewheeling diodes antiparalleled to the element. At least one of each switching element and each freewheeling diode of the main conversion circuit 201 is composed of a semiconductor module 202 to which the semiconductor device according to any one of the above-described embodiments 1 to 8 is applied. The six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.

Further, although the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element, the drive circuit may be built in the semiconductor module 202, or a drive circuit may be provided separately from the semiconductor module 202. It may be provided. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201. Specifically, the drive circuit outputs a drive signal for turning on the switching element and a drive signal for turning off the switching element to the control electrode of each switching element according to the control signal from the control circuit 203 described later. .. When the switching element is kept on, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept off, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).

The control circuit 203 controls the switching element of the main conversion circuit 201 so that the desired power is supplied to the load 300. Specifically, the control circuit 203 calculates the time (on time) for each switching element of the main conversion circuit 201 to be in the on state based on the power to be supplied to the load 300. For example, the control circuit 203 can control the main conversion circuit 201 by PWM (Pulse Width Modulation) control that modulates the on-time of the switching element according to the voltage to be output. Then, the control circuit 203 is controlled by the drive circuit included in the main conversion circuit 201 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Outputs a command (control signal). The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.

In the power conversion device according to the ninth embodiment as described above, since the semiconductor device according to the first to eighth embodiments is applied as at least one of the switching element and the freewheeling diode of the main conversion circuit 201, a resin is used. The possibility of the sealant leaking to the outside of the semiconductor device can be suppressed.

In the ninth embodiment described above, an example in which the semiconductor device according to any one of the first to eighth embodiments is applied to the two-level three-phase inverter has been described. It is not limited and can be applied to various power conversion devices. In the ninth embodiment, the semiconductor device according to any one of the first to eighth embodiments is a two-level power conversion device, but a three-level or multi-level power conversion device may be used. When supplying power to a single-phase load, the semiconductor device may be applied to a single-phase inverter. Further, when supplying electric power to a DC load or the like, it is also possible to apply the above semiconductor device to a DC / DC converter or an AC / DC converter.

Further, the power conversion device according to the ninth embodiment is not limited to the case where the above-mentioned load is an electric motor, for example, a discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system. It can also be used as a power supply device for the above, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

In the present invention, each embodiment and each modification can be freely combined, and each embodiment and each modification can be appropriately modified or omitted within the scope of the invention.

1 Container, 2 Electronic components, 3 External outlet terminal, 4 Resin sealant, 4a Top surface, 6 Suppression structure, 11 Metal base plate, 12 Case, 12a, 12b Eaves part, 12a1 Hook part, 12a2 Top surface groove, 12a3 Bottom surface Groove, 12a4 side groove, 12c first upper surface, 12e pool structure, 31,32 multi-bend terminal, 31a, 31b, 31c, 31d, 31e, 32a, 32b, 32c bend, 51, 52, 53 Crawling suppression component , 201 main conversion circuit, 203 control circuit.

Claims (9)

A container body having a bottom portion and a side wall portion,
An electronic component including a semiconductor element mounted on the bottom of the container,
One or more conductive members pulled upward from the electronic component,
A resin sealant that is disposed inside the container and seals the electronic component is provided.
The conductive member is seen containing a bent conductive member having two or more bent portions positioned above the upper surface of the resin encapsulant,
A restraining structure for suppressing the creeping up of the resin encapsulant is provided on the inner wall portion of the side wall portion located above the upper surface of the resin encapsulant.
The restraining structure includes a protrusion and
At least one of a concave portion and a convex portion is arranged on at least one of the upper surface, the lower surface, and the side surface of the protruding portion.
A semiconductor device in which the projecting portion is arranged so as to straddle the inner wall portion of the side wall portion and the side surface of the conductive member . A container body having a bottom portion and a side wall portion,
An electronic component including a semiconductor element mounted on the bottom of the container,
One or more conductive members pulled upward from the electronic component,
A resin sealant that is disposed inside the container and seals the electronic component is provided.
The conductive member is seen containing a bent conductive member having two or more bent portions positioned above the upper surface of the resin encapsulant,
A restraining structure for suppressing the creeping up of the resin encapsulant is provided on the inner wall portion of the side wall portion located above the upper surface of the resin encapsulant.
The inner peripheral shape of the side wall portion in the top view includes the corner portion, and includes the corner portion.
A semiconductor device in which the restraining structure is arranged only at the corners. A container body having a bottom portion and a side wall portion,
An electronic component including a semiconductor element mounted on the bottom of the container,
One or more conductive members pulled upward from the electronic component,
A resin sealant that is disposed inside the container and seals the electronic component is provided.
The conductive member is seen containing a bent conductive member having two or more bent portions positioned above the upper surface of the resin encapsulant,
A protrusion is provided on the side surface of the conductive member, which is located above the upper surface of the resin encapsulant.
A semiconductor device in which at least one of a concave portion and a convex portion is provided on at least one of an upper surface, a lower surface, and a side surface of the protruding portion. The semiconductor device according to claim 1 or 2.
The side wall is
It has a low step on the inside and a high step on the outside.
The suppression structure
A semiconductor device that is disposed on the inner upper surface of the step portion, opens upward, and includes a recess in which the upper portion is wider than the lower portion. The semiconductor device according to claim 1 or 2.
The suppression structure
A semiconductor device including at least one of a mirror surface, a rough surface, and an uneven surface, which are arranged linearly or curvedly in a plan view of the inner wall portion. The semiconductor device according to claim 1.
The suppression structure is a semiconductor device arranged on the entire inner circumference of the side wall portion in a top view. The semiconductor device according to claim 1.
The inner peripheral shape of the side wall portion in the top view includes a straight portion, and includes a straight portion.
A semiconductor device in which the restraining structure is arranged only in the straight line portion. The semiconductor device according to any one of claims 1 to 3.
A semiconductor device in which the bent portion of the bent conductive member is an L-shaped bent portion, an L-shaped bent portion included in a U-shape, or an L-shaped bent portion included in an S-shape. A main conversion circuit having the semiconductor device according to any one of claims 1 to 3 and converting and outputting input power.
A power conversion device including a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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