JP6865008B2 - Substrate processing equipment and substrate processing method - Google Patents

Description

Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method.

In the manufacturing process of semiconductors, liquid crystal panels, etc., the substrate processing apparatus treats the surface to be treated of the substrate such as a wafer or liquid crystal substrate with a chemical solution, rinses the surface to be treated of the substrate after the chemical solution treatment with a rinse liquid, and performs the rinse liquid treatment. It is a device that dries the subsequent substrate. In this drying process, there is a problem that, for example, a pattern around a memory cell or a gate collapses due to miniaturization accompanying a high integration and a high capacity of semiconductors in recent years. This is due to the spacing and structure of the patterns, the surface tension of the rinsing liquid, and the like.

Therefore, for the purpose of suppressing the above-mentioned pattern collapse, a volatile solvent (for example, IPA: 2-propanol, isopropyl alcohol) having a surface tension smaller than that of the rinsing liquid, that is, the rinsing treatment liquid (for example, DIW: ultrapure water) is used. ) Has been proposed as a substrate drying method. This substrate drying method is a method of replacing the treatment liquid on the surface to be treated of the substrate with a volatile solvent to dry the substrate, and is used in mass production factories and the like. In this replacement step, it is necessary to replace the treatment liquid on the surface to be treated with a volatile solvent while covering the surface to be treated of the substrate with a liquid film in order to avoid drying defects such as uneven drying.

However, in the replacement step, it is difficult to quickly replace the treated liquid on the surface to be treated with a volatile solvent while covering the surface to be treated of the substrate with a liquid film. For example, the substrate rotates in a horizontal state, and the processing liquid is relative to the center of the surface to be processed of the substrate (for example, a circular substrate means a center, and a rectangular substrate means a diagonal intersection. The same applies hereinafter). In the state of being supplied from an angle, the volatile solvent is supplied from directly above the center of the surface to be treated of the substrate. Then, a few seconds after the start of supply of the volatile solvent, the supply of the treatment liquid is stopped, and the treatment liquid on the surface to be treated of the substrate is replaced with the volatile solvent. At this time, the liquid film on the surface to be treated of the substrate is not interrupted, and the surface to be treated of the substrate is covered with the liquid film.

However, in the above-mentioned replacement step, the treatment liquid is supplied to the center of the surface to be treated of the substrate for several seconds even after the start of supply of the volatile solvent. Therefore, the volatile solvent supplied to the center of the surface to be treated of the substrate spreads over the entire surface to be treated of the substrate, that is, the spread of the volatile solvent is hindered by the supply of the treatment liquid. Therefore, it is difficult to quickly replace the treatment liquid on the surface to be treated of the substrate with a volatile solvent, and it takes time to complete the replacement of the treatment liquid with the volatile solvent. Therefore, it is desired to improve the substitution efficiency of substituting the treatment liquid on the surface to be treated of the substrate with a volatile solvent.

Japanese Unexamined Patent Publication No. 2000-58498

An object to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving the substitution efficiency of substituting a processing liquid on a surface to be processed of a substrate with a volatile solvent.

The substrate processing apparatus according to the embodiment of the present invention includes a rotation mechanism for rotating a substrate having a surface to be processed in a plane.
A first nozzle that supplies a treatment liquid to the surface to be treated of the substrate that is rotated by the rotation mechanism, and
A second nozzle that supplies a volatile solvent to the center of the surface to be processed, which is a position on the rotation axis of the rotation mechanism on the surface to be processed of the substrate that is rotated by the rotation mechanism.
A position moving portion for moving the first nozzle and
From a state where the treatment liquid is supplied to the center of the target surface of the substrate from the first nozzle, the process liquid supply position where the treatment liquid in the surface to be processed of the substrate is supplied, the first The first nozzle is moved so that the treatment liquid supplied from the nozzle is positioned near the center where the treatment liquid supplied from the nozzle can spread to the center of the surface to be processed of the substrate rotated by the rotation mechanism , and the treatment liquid is transferred to the treatment liquid. The treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, and the volatile solvent is supplied from the second nozzle to the center of the surface to be processed of the substrate. A control unit that controls the position moving unit so as to move the first nozzle so as to move the supply position along a direction outward from the center of the surface to be processed of the substrate.
To be equipped.

The substrate processing method according to the embodiment of the present invention includes a step of rotating a substrate having a surface to be processed in a plane by a rotation mechanism.
A step of supplying the treatment liquid from the first nozzle to the center of the surface to be processed, which is a position on the rotation axis of the rotation mechanism on the surface to be processed of the substrate rotated by the rotation mechanism.
From a state where the treatment liquid is supplied to the center of the target surface of the substrate from the first nozzle, the process liquid supply position where the treatment liquid in the surface to be processed of the substrate is supplied, the first The first nozzle is moved by the position moving portion so that the processing liquid supplied from the nozzle is positioned near the center where the processing liquid supplied from the nozzle can spread to the center of the surface to be processed of the substrate rotated by the rotation mechanism. Moving process and
In a state where the treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, it volatilizes from the second nozzle to the center of the surface to be processed of the substrate rotated by the rotation mechanism. The process of supplying the sex solvent and
A state in which the treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, and the volatile solvent is supplied from the second nozzle to the center of the surface to be processed of the substrate. in a second moving step of moving the first nozzle by the position moving unit to move along a direction out of the process liquid supply position from the center of the target surface of the substrate,
Have.

According to the embodiment of the present invention, it is possible to improve the substitution efficiency of substituting the treatment liquid on the surface to be treated of the substrate with a volatile solvent.

It is a figure which shows the schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a top view which shows a part of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure for demonstrating the substrate processing process which concerns on 1st Embodiment. It is a figure for demonstrating one step of the substrate processing process which concerns on 1st Embodiment. It is a figure for demonstrating one step of the substrate processing process which concerns on 1st Embodiment. It is a figure for demonstrating the comparative example of the substrate processing process which concerns on 1st Embodiment. It is a figure for demonstrating the substrate processing process which concerns on 2nd Embodiment. It is a figure for demonstrating one step of the substrate processing process which concerns on 3rd Embodiment. It is a figure for demonstrating the particle removal effect which concerns on 3rd Embodiment. It is a figure which shows the schematic structure of a part of the substrate processing apparatus which concerns on 4th Embodiment. It is a figure which shows the schematic structure of a part of the substrate processing apparatus which concerns on 5th Embodiment. It is a figure which shows the schematic structure of a part of the substrate processing apparatus which concerns on 6th Embodiment. It is a figure which shows the schematic structure of a part of the substrate processing apparatus which concerns on 7th Embodiment.

<First Embodiment>
The first embodiment will be described with reference to FIGS. 1 to 6.

(Basic configuration)
As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment includes a processing chamber 20, a cup 30, a support unit 40, a rotation mechanism 50, a processing liquid supply unit 60, and a solvent supply unit 70. And a control unit 80.

The processing chamber 20 is a processing box for processing the substrate W having the surface to be processed Wa. The processing chamber 20 is formed in a box shape such as a rectangular parallelepiped or a cube, and houses a cup 30, a support portion 40, a rotation mechanism 50, and the like. A vertical laminar flow (downflow) due to clean air exists in the processing chamber 20, and the inside of the processing chamber 20 is kept clean. Further, _{an inert gas such as N 2} is supplied into the processing chamber 20, and the oxygen concentration in the processing chamber 20 is suppressed.

The cup 30 is formed in a cylindrical shape, is positioned substantially in the center of the processing chamber 20, and is provided so as to accommodate the support portion 40 and the rotation mechanism 50 inside the cup 30. The upper portion of the peripheral wall of the cup 30 is inclined inward, and is opened so that the surface to be processed Wa of the substrate W on the support portion 40 is exposed. The cup 30 receives the processing liquid scattered from the rotating substrate W and the processing liquid that has flowed down. A discharge port (not shown) for discharging the received processing liquid is formed on the bottom surface of the cup 30, and a discharge pipe (not shown) is connected to the discharge port.

The support portion 40 is positioned substantially in the center of the cup 30 and is rotatably provided on the rotation mechanism 50 in a horizontal plane. This support portion 40 is called, for example, a spin table. The support portion 40 has a plurality of support members 41, and the support members 41 support the substrate W in a horizontal state. The center of the surface Wa to be processed of the substrate W is positioned on the rotation axis of the support portion 40 and is supported by the support portion 40, so that the substrate W rotates in a plane.

The rotation mechanism 50 is provided so as to hold the support portion 40, and is configured to rotate the support portion 40 in a horizontal plane. For example, the rotation mechanism 50 has a rotation shaft connected to the center of the support portion 40, a motor for rotating the rotation shaft (neither of them is shown), and the like, and is supported via the rotation shaft by driving the motor. The part 40 is rotated. The rotation mechanism 50 is electrically connected to the control unit 80, and its drive is controlled by the control unit 80.

The processing liquid supply unit 60 includes a first nozzle 61, a first nozzle moving mechanism 62, and a first liquid supply unit 63.

The first nozzle 61 is positioned above the support portion 40, and is formed so as to be swingable by the first nozzle moving mechanism 62 along the surface to be processed Wa of the substrate W on the support portion 40. The first nozzle 61 is a treatment liquid (for example, a chemical solution, DIW) from a nozzle position facing the surface to be processed Wa of the substrate W on the support portion 40 toward the surface to be processed Wa of the substrate W on the support portion 40. ) (Details will be described later).

As shown in FIGS. 1 and 2, the first nozzle moving mechanism 62 has a movable arm 62a and an arm swing mechanism 62b. The movable arm 62a holds the first nozzle 61 at one end and is horizontally supported by the arm swing mechanism 62b. The arm swing mechanism 62b holds one end of the movable arm 62a on the opposite side of the first nozzle 61, and swings the movable arm 62a along the surface to be processed Wa of the substrate W on the support portion 40. The arm swing mechanism 62b is electrically connected to the control unit 80, and its drive is controlled by the control unit 80.

For example, the first nozzle 61 has a nozzle position facing the center of the surface to be processed Wa of the substrate W on the support portion 40 and the substrate W on the support portion 40 by the first nozzle moving mechanism 62. It is possible to move back and forth between the standby position where the substrate W can be carried in and out by retracting from above the surface Wa to be processed. In addition, in FIGS. 1 and 2, the first nozzle 61 is located on the support portion 40 at a position facing the center of the surface to be processed Wa of the substrate W.

Returning to FIG. 1, the first liquid supply unit 63 supplies the processing liquid to the first nozzle 61. The first liquid supply unit 63 and the first nozzle 61 are connected by a pipe 63a. The first liquid supply unit 63 includes a tank for storing the processing liquid, a pump as a drive source, a valve as a regulating valve for adjusting the supply amount (none of which is shown), and the like. The processing liquid in the tank is supplied to the first nozzle 61 by the force of the pump.

Here, the first liquid supply unit 63 can switch between the chemical liquid and the DIW as the treatment liquid, for example. The first liquid supply unit 63 has a tank for storing the chemical solution and a tank for storing the DIW (neither of them is shown), and the chemical solution or DIW in the tank is piped 63a to the first nozzle 61. Supply via.

The solvent supply unit 70 includes a second nozzle 71, a second nozzle moving mechanism 72, and a second liquid supply unit 73.

The second nozzle 71 is positioned above the support portion 40, and is formed so as to be swingable by the second nozzle moving mechanism 72 along the surface to be processed Wa of the substrate W on the support portion 40. The second nozzle 71 is a volatile solvent (for example, IPA) from a nozzle position facing the surface to be treated Wa of the substrate W on the support portion 40 toward the surface to be treated Wa of the substrate W on the support portion 40. Supply. This volatile solvent is a liquid having a surface tension smaller than that of the treatment liquid (for example, DIW).

As shown in FIGS. 1 and 2, the second nozzle moving mechanism 72 has a movable arm 72a and an arm swinging mechanism 72b, similarly to the first nozzle moving mechanism 62. The movable arm 72a holds a second nozzle 71 at one end and is horizontally supported by the arm swing mechanism 72b. The arm swing mechanism 72b holds one end of the movable arm 72a on the opposite side of the second nozzle 71, and swings the movable arm 72a along the surface to be processed Wa of the substrate W on the support portion 40. The arm swing mechanism 72b is electrically connected to the control unit 80, and its drive is controlled by the control unit 80.

For example, the second nozzle 71 has a nozzle position facing the center of the surface to be processed Wa of the substrate W on the support portion 40 and the substrate W on the support portion 40 by the second nozzle moving mechanism 72. It is possible to move back and forth between the standby position where the substrate W can be carried in and out by retracting from above the surface Wa to be processed. In addition, in FIGS. 1 and 2, the second nozzle 71 is in a standby position (a position outside the cup 30) that does not face the surface to be processed Wa of the substrate W on the support portion 40.

Returning to FIG. 1, the second liquid supply unit 73 supplies the volatile solvent to the second nozzle 71. The second liquid supply unit 73 and the second nozzle 71 are connected by a pipe 73a. The second liquid supply unit 73 includes a tank for storing the volatile solvent, a pump as a drive source, a valve as a regulating valve for adjusting the supply amount (none of which is shown), and the like. The volatile solvent in the tank is supplied to the second nozzle 71 by the force of the pump.

Here, as the volatile solvent, in addition to IPA, for example, monohydric alcohols such as ethanol, ethers such as diethyl ether and ethyl methyl ether, and ethylene carbonate can be used. ..

The control unit 80 includes a microcomputer that centrally controls each unit, and a storage unit (none of which is shown) that stores substrate processing information and various programs related to substrate processing. Based on the substrate processing information and various programs, the control unit 80 rotates the support unit 40 by the rotating mechanism 50, supplies the processing liquid by the processing liquid supply unit 60, and supplies the volatile solvent by the solvent supply unit 70. And so on.

(Substrate processing process)
Next, the flow of substrate processing performed by the substrate processing apparatus 10 described above will be described with reference to FIGS. 3 to 6. In the following, as an example, the substrate is a wafer (diameter 300 mm), a chemical solution and DIW are used as the treatment solution, and IPA is used as the volatile solvent. Further, processing conditions such as the rotation speed of the support unit 40, the liquid supply time, and the liquid supply position are set in advance in the control unit 80, but can be arbitrarily changed by the operator.

FIG. 3 is a processing sequence according to the present embodiment, and FIG. 6 is a processing sequence according to a comparative example. In each of the items in each column of FIGS. 3 and 6, the DIW supply position is the position where the DIW is supplied on the surface Wa to be processed of the substrate W. The IPA supply position is a position on the surface Wa of the substrate W to be processed where IPA is supplied. The numerical values of these liquid supply positions are offset positions deviated from the center (Center = 0 mm) of the surface to be processed Wa of the substrate W.

As shown in FIG. 3, the substrate processing step has five steps (first step to fifth step) after the chemical treatment. In the chemical treatment before these steps, first, the substrate W is set on the support portion 40, and the support portion 40 is rotated at a predetermined rotation speed (for example, 500 rpm) by the rotation mechanism 50. As a result, the substrate W on the support portion 40 also rotates at a predetermined rotation speed. The first nozzle 61 supplies the chemical solution to the center of the surface to be processed Wa of the substrate W for a predetermined time (for example, several tens of seconds) from the nozzle position facing the center (0 mm) of the surface to be processed Wa of the rotating substrate W. .. The second nozzle 71 is in a standby position that does not face the surface to be processed Wa of the substrate W.

The chemical solution discharged from the first nozzle 61 is supplied to the center of the surface to be processed Wa of the substrate W on the rotating support portion 40, and is applied to the entire surface Wa to be processed of the substrate W by the centrifugal force due to the rotation of the substrate W. spread. As a result, a liquid film of the chemical solution is formed on the surface Wa to be treated of the substrate W, and the surface Wa to be treated of the substrate W is treated by the chemical solution.

The first step is a rinsing step using DIW. In this first step, DIW is supplied from the first nozzle 61 to the surface to be processed Wa of the substrate W for 10 seconds, following the above-mentioned chemical solution treatment for a predetermined time. At this time, the DIW supply position is the center (0 mm) of the surface to be processed Wa of the substrate W, and the first nozzle 61 faces the same position as the above-mentioned chemical solution treatment, that is, the center of the surface Wa to be processed of the substrate W. DIW is supplied from the nozzle position to the center of the surface Wa to be processed of the rotating substrate W. The rotation speed of the substrate W (the rotation speed of the support portion 40) in the first step is 500 rpm.

The DIW discharged from the first nozzle 61 is supplied to the center of the surface to be processed Wa of the substrate W on the rotating support portion 40, and is applied to the entire surface Wa to be processed of the substrate W by the centrifugal force due to the rotation of the substrate W. spread. According to the spread of the DIW, the previously supplied chemical solution on the surface to be treated Wa of the substrate W is discharged from the outer periphery of the surface to be treated Wa. In this way, the surface Wa to be treated of the substrate W on the support portion 40 is replaced with the DIW from the chemical solution, and is covered with the liquid film of the DIW to be washed.

The DIW is switched from the chemical solution by the first liquid supply unit 63 and supplied to the first nozzle 61. In this switching between the chemical solution and the DIW, the chemical solution and the DIW are continuously supplied to the first nozzle 61. Therefore, the liquid film on the surface to be treated Wa of the substrate W is not interrupted, and it is possible to prevent the surface Wa to be processed of the substrate W from being exposed during a series of liquid treatments.

The second step is a DIW + IPA step (DIW + IPA wrap) using DIW and IPA. In this second step, IPA is supplied to the surface to be processed Wa of the substrate W for 1 second following the first step, that is, with DIW being supplied. At this time, the DIW supply position is a position 30 mm from the center of the surface to be processed Wa of the substrate W, and the IPA supply position is the center (0 mm) of the surface Wa to be processed of the substrate W. That is, by the time when the supply of IPA is started, the first nozzle 61 is moved from the nozzle position facing the center of the surface to be processed Wa of the substrate W to the nozzle position facing 30 mm from the center of the surface Wa to be processed of the substrate W. It is moving (first movement), and the second nozzle 71 is moving from the standby position to the nozzle position facing the center of the surface to be processed Wa of the substrate W. The rotation speed of the substrate W in the second step is constant at 500 rpm, which is the same as in the first step immediately before.

Here, the above-mentioned 30 mm DIW supply position in the present embodiment is set at a position where the DIW supplied from the first nozzle 61 to the 30 mm DIW supply position extends to the center of the surface to be processed Wa on the rotating substrate W. Has been done. As a result, even if the first nozzle 61 supplies DIW not at the center of the surface to be processed Wa of the substrate W but at a position 30 mm from the center, the vicinity of the center of the surface Wa to be processed of the substrate W is formed by the liquid film of DIW. Be covered. That is, even if the DIW supply position is offset, the DIW is also supplied to the center of the surface to be processed Wa of the substrate W, so that the entire surface Wa to be processed including the vicinity of the center of the surface Wa to be processed of the substrate W is the DIW. It will be surely covered by the liquid film. Therefore, since the surface Wa to be treated of the substrate W is suppressed during a series of liquid treatments, it is preferable in that drying defects such as uneven drying can be suppressed.

The DIW supply position in the second step is a position 30 mm from the center of the surface Wa to be processed of the substrate W, which is an example of a position near the center. The position near the center is, for example, a position within a range having a distance of 1/2 of the radius of the substrate W from the center of the surface Wa to be processed of the substrate W, excluding the center. In the present embodiment, at least, the second nozzle 71 moved to supply the IPA to the center of the surface to be processed Wa of the substrate W needs to be in a position where it does not collide with the first nozzle 61. Further, as described above, it is also preferable to take into consideration the prevention of uneven drying and the like. Since such a position changes depending on the viscosity and supply amount of the liquid, the rotation speed of the substrate W, and the like, it is experimentally obtained and set in the control unit 80.

In the second step, as shown in FIG. 4, the first nozzle 61 is the surface Wa of the substrate W to be processed from the nozzle position (30 mm) facing the position 30 mm from the center of the surface Wa of the substrate W. DIW is supplied at a position 30 mm from the center. In this state, the second nozzle 71 supplies IPA to the center of the surface to be processed Wa of the substrate W from the nozzle position (0 mm) facing the center of the surface Wa to be processed of the substrate W. In this way, with the DIW supplied from the first nozzle 61 at a position 30 mm from the center of the surface Wa to be processed of the substrate W, the IPA discharged from the second nozzle 71 is processed by the substrate W. Since it is supplied on the liquid film of DIW at the center of the surface Wa, DIW and IPA will overlap (DIW + IPA wrap). Since the first nozzle 61 supplies DIW to a position deviated from the center of the surface to be processed Wa of the substrate W (a position near the center), the DIW is supplied to the center of the surface to be processed Wa, as compared with supplying DIW to the center of the surface to be processed Wa. The thickness of the DIW liquid film formed at the center of the surface Wa to be treated becomes thin. Then, the DIW and IPA supplied on the surface to be processed Wa of the substrate W spread over the entire surface Wa to be processed of the substrate W by the centrifugal force due to the rotation of the substrate W.

Returning to FIG. 3, the third step is a DIW + IPA step (DIW supply position scan) using DIW and IPA. In this third step, DIW and IPA are supplied for 4 seconds following the second step, and the DIW supply position moves from the position of 30 mm to the position of 200 mm during the 4 seconds (second movement). .. At this time, the IPA supply position is the same position as the above-mentioned second step, that is, the center of the surface to be processed Wa of the substrate W. The supply of DIW is stopped 4 seconds after the start of the third step. The rotation speed of the substrate W in the third step is constant at 500 rpm, which is the same as in the second step immediately before.

In the third step, as shown in FIG. 5, the first nozzle 61 is the surface Wa of the substrate W to be processed from the nozzle position (30 mm) facing the position 30 mm from the center of the surface Wa of the substrate W. It moves to the nozzle position (200 mm) located just above the outer circumference. At this time, in the first nozzle moving mechanism 62, the first nozzle 61 is supplied to the surface to be processed Wa of the substrate W while the first nozzle 61 is supplying the DIW to the surface to be processed Wa of the substrate W. Move along the direction from the center to the outside. As a result, the DIW supply position, that is, the processing liquid supply position on the surface Wa of the substrate W on the support portion 40 to which the processing liquid is supplied moves. Therefore, the first nozzle moving mechanism 62 functions as a position moving portion that moves the processing liquid supply position in the direction along the surface to be processed Wa of the substrate W.

Here, the DIW supply position is offset from the center of the surface to be processed Wa of the substrate W when the IPA is supplied to the surface Wa to be processed of the substrate W, and when the supply of IPA starts, the surface Wa to be processed of the substrate W It moves along the direction from the center to the outside. In this case, since the DIW supply position deviates from the center of the surface to be processed Wa of the substrate W, the liquid film of DIW becomes thin near the center of the surface Wa to be processed of the substrate W as described above. Therefore, even if the IPA is supplied to the center of the surface Wa to be processed of the substrate W, the spread of the IPA is suppressed from being hindered by the liquid film of the DIW, and the DIW is easily replaced by the IPA. Further, by moving the DIW supply position from the center of the surface to be processed Wa of the substrate W toward the outside, the amount of DIW liquid (liquid) gradually increases from the center of the surface Wa to be processed of the substrate W toward the outer circumference. The thickness of the film) is reduced, and it is promoted that the DIW is discharged from the vicinity of the center of the surface to be processed Wa of the substrate W to the outer periphery. As a result, the time for DIW to be discharged from the center of the surface to be processed Wa of the substrate W to the outer periphery is shortened, and as a result, the time for IPA to spread over the entire surface Wa to be processed of the substrate W is shortened, and from DIW to IPA. Replacement efficiency is improved.

Returning to FIG. 3, the fourth step is an IPA step using IPA. In this fourth step, the supply of IPA is continued for 10 seconds following the third step. At this time, the supply of DIW is stopped. The supply of IPA is also stopped 10 seconds after the start of the fourth step. The IPA supply position is the same position as the above-mentioned third step, that is, the center of the surface to be processed Wa of the substrate W. The second nozzle 71 is in a nozzle position facing the center of the surface to be processed Wa of the substrate W, and the first nozzle 61 is in a standby position not facing the surface Wa to be processed of the substrate W. That is, during the third step or the fourth step, the second nozzle 71 is stopped at the nozzle position facing the center of the surface to be processed Wa of the substrate W, but the first nozzle 61 is covered with the substrate W. It moves from the nozzle position (200 mm) located directly above the outer circumference of the processing surface Wa to the standby position. The rotation speed of the substrate W in the fourth step is constant at 500 rpm, which is the same as in the third step immediately before.

In the fourth step described above, the supply time (for example, 10 seconds) in which DIW is not supplied and only IPA is supplied is the processing liquid that has entered the gap between the fine patterns on the surface to be processed Wa of the substrate W. Is set to the time required to completely replace the IPA with IPA, that is, to allow the IPA to penetrate between the patterns on the surface Wa to be processed of the substrate W.

The fifth step is a drying step (Dry step) of drying the substrate W. In this fifth step, following the fourth step, the rotation of the substrate W is continued for 20 seconds, and after that 20 seconds, the rotation of the substrate W is stopped. The supply of IPA is stopped, and the surface Wa to be processed of the substrate W is dried by shaking off and drying. At this time, the first nozzle 61 and the second nozzle 71 are in standby positions that do not face the surface to be processed Wa of the substrate W. That is, during the fifth step, the second nozzle 71 moves from the nozzle position facing the center of the surface to be processed Wa of the substrate W to the standby position. The rotation speed of the substrate W in the fifth step is constant at 1200 rpm, which is faster than the fourth step immediately before.

According to the above-mentioned substrate processing step, when the IPA is supplied to the surface to be processed Wa of the substrate W in the second step, the DIW supply position is shifted from the center of the surface to be processed Wa of the substrate W to obtain the substrate W. The liquid film of DIW near the center of the surface to be treated Wa becomes thin. As a result, even if IPA is supplied to the center of the surface Wa to be processed of the substrate W, the spread of IPA is suppressed from being hindered by the liquid film of DIW, so that DIW can be easily replaced with IPA, and DIW to IPA can be easily replaced. The replacement efficiency with can be improved.

Further, in the third step, by performing the DIW supply position scan, the DIW supply position moves along the direction from the center of the surface to be processed Wa of the substrate W to the outside, so that the surface Wa to be processed of the substrate W is moved. The amount of DIW liquid gradually decreases from the center to the outer circumference. As a result, DIW is promoted to be discharged from the vicinity of the center of the surface to be processed Wa of the substrate W to the outer periphery, and the spread of IPA is suppressed from being hindered by the liquid film of DIW. Therefore, the IPA is covered with the substrate W. The time to spread over the entire processing surface Wa becomes faster, and the efficiency of replacement from DIW to IPA can be improved.

Here, as shown in FIG. 6, in the comparative example in which there is no step of performing the DIW supply position scan, the replacement time from DIW to IPA is 20 seconds (5 seconds in the second step + 15 seconds in the third step =). 20 seconds), and in the first embodiment, it is 15 seconds (1 second in the second step + 4 seconds in the third step + 10 seconds in the fourth step = 15 seconds). Therefore, the replacement time of the first embodiment described above is 5 seconds shorter than the replacement time of the comparative example. Therefore, the replacement time from DIW to IPA can be shortened by providing the step of performing the DIW supply position scan. The replacement time from DIW to IPA can be obtained by measuring the time at which the water concentration of the liquid becomes equal to or less than a predetermined value or 0 (zero) while measuring the water concentration of the liquid.

As described above, according to the first embodiment, the treatment liquid (for example, DIW) is supplied from the first nozzle 61 to the vicinity of the center of the surface to be treated Wa of the substrate W, and is a volatile solvent (for example, DIW). For example, in a state where the IPA) is supplied from the second nozzle 71 to the center of the surface to be processed Wa of the substrate W, the processing liquid supply position on the surface Wa to be processed of the substrate W is set to the center of the surface Wa to be processed of the substrate W. Move along the outward direction from. As a result, the amount of the treatment liquid gradually decreases from the center of the surface Wa to be treated of the substrate W toward the outer periphery, and the treatment liquid is discharged from the vicinity of the center of the surface Wa to be treated of the substrate W to the outer periphery. Since the liquid film of the treatment liquid suppresses the spread of the volatile solvent, the time for the volatile solvent to spread over the entire surface Wa of the substrate W to be treated becomes faster. Therefore, it is possible to improve the replacement efficiency of substituting the treatment liquid on the surface Wa to be treated of the substrate W with a volatile solvent.

<Second embodiment>
The second embodiment will be described with reference to FIG. In the second embodiment, the differences from the first embodiment (flow of the substrate processing process) will be described, and other description will be omitted. The items in each column of FIG. 7 are the same as those of FIGS. 3 and 6.

As shown in FIG. 7, the substrate processing step according to the second embodiment has seven steps (first step to seventh step) after the chemical solution treatment. In this substrate processing step, in addition to each step (see FIG. 3) according to the first embodiment, immediately before the fourth step shown in FIG. 7, that is, the DIW + IPA step (DIW supply position scan) for moving the DIW supply position and Immediately after that, it has a liquid film securing step (third step and fifth step).

In the liquid film securing step, the rotation speed of the substrate W is lowered by the control unit 80 as compared with the immediately preceding step. The control unit 80 is in a state where the DIW is supplied to the surface to be processed Wa of the substrate W and the IPA is supplied to the surface to be processed Wa of the substrate W for a predetermined time (for example, the second step immediately before). When the rotation mechanism 50 is continued for 1 second of the step or 3 seconds of the fourth step), the rotation speed of the support portion 40 is lowered. For example, in the third step, the rotation speed of the substrate W in the second step is reduced to 250 rpm, and in the fifth step, the rotation speed of the substrate W in the fourth step is reduced to 100 rpm. In the sixth step, the rotation speed of the substrate W in the fifth step is increased to 500 rpm, and in the seventh step, the rotation speed of the substrate W in the sixth step is increased to 1200 rpm.

According to this liquid film securing step, the thickness of the liquid film on the surface to be processed Wa of the substrate W is maintained at a desired value by lowering the rotation speed of the substrate W as compared with the immediately preceding step. The entire surface to be treated Wa can be reliably covered with a liquid film. As a result, it is possible to reliably prevent the surface Wa to be treated of the substrate W from being exposed during a series of liquid treatments. Further, in the fifth step, the IPA can be permeated into the gaps between the fine patterns on the surface Wa to be processed of the substrate W, and the treatment liquid that has entered the gaps between the fine patterns is surely replaced with IPA. can do. Depending on various conditions, it is possible to eliminate the liquid film securing step as in the first embodiment.

As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Further, by providing the liquid film securing step, the entire surface to be treated Wa of the substrate W is surely covered with the liquid film, and the surface Wa to be treated of the substrate W is suppressed from being exposed during a series of liquid treatments. Therefore, it is possible to reliably suppress drying defects such as uneven drying.

<Third embodiment>
A third embodiment will be described with reference to FIGS. 8 and 9. In the third embodiment, the difference from the first embodiment (DIW supply position scan according to the spread of IPA) will be described, and other description will be omitted.

As shown in FIG. 8, in the DIW supply position scan (DIW + IPA step) according to the third embodiment, the first nozzle 61, that is, the DIW supply position is from the second nozzle 71 to the surface Wa of the substrate W to be processed. According to the spread of the IPA supplied to the center (region R1 in which the IPA spreads), the substrate W moves along the outward direction from the center of the surface to be processed Wa.

The first nozzle moving mechanism 62 sets the DIW supply position to the surface to be processed of the substrate W according to the speed (flow velocity) at which the IPA supplied from the second nozzle 71 to the surface to be processed Wa of the substrate W spreads. Move along the outward direction from the center of Wa. At this time, it is desirable to move the DIW supply position so that the DIW supply position is within the region R1 and is located near the outer circumference (near the boundary) of the region R1. The spreading speed of the IPA has been experimentally determined, and the moving speed of the first nozzle 61 is set in the control unit 80 based on this spreading speed. Therefore, the control unit 80 controls the first nozzle moving mechanism 62 based on the set value of the moving speed of the first nozzle 61, and adjusts the moving speed of the first nozzle 61.

In this way, according to the DIW supply position scan according to the spread of the IPA, the DIW supply position is moved along the direction outward from the center of the surface Wa to be processed of the substrate W according to the spread of the IPA. The spread of IPA is suppressed from being hindered by DIW, and the IPA smoothly spreads over the entire surface to be processed Wa of the substrate W. Therefore, the time for the IPA to spread over the entire surface Wa of the substrate W to be treated becomes faster, so that the efficiency of replacement of the treatment liquid with the volatile solvent can be further improved.

When the substrate W has hydrophilicity, the DIW spreads in harmony with the surface Wa of the substrate W to be treated, and watermarks, that is, particles are unlikely to remain, but when the substrate W has hydrophobicity, the DIW Spreads while being repelled by the surface to be processed Wa of the substrate W, and the flow becomes non-uniform. It is easy to remain in. However, as the DIW supply position moves along the direction outward from the center of the surface to be processed Wa of the substrate W according to the spread of the IPA, the area to which the DIW is supplied on the surface Wa to be processed of the substrate W is increased. It gradually becomes smaller, and the IPA smoothly spreads over the entire surface to be processed Wa of the substrate W. As a result, it is possible to suppress drying unevenness due to the exposure of a part of the surface Wa to be processed of the substrate W, so that it is possible to prevent particles from remaining on the hydrophobic substrate W.

Here, for example, as the substrate W having hydrophilicity, there is a silicon substrate in which the surface to be treated Wa is covered with an oxide film. On the other hand, as the hydrophobic substrate W, there is a silicon substrate in which the surface to be treated Wa is not covered, that is, a silicon substrate in which silicon is exposed. In this silicon substrate with bare silicon, when DIW (H ₂ O) remains on the surface to be treated Wa, oxidation proceeds on the surface to be treated Wa, and watermarks are generated and remain. However, as the DIW supply position moves along the direction from the center of the surface to be processed Wa of the substrate W to the outside according to the spread of the IPA, the IPA smoothly moves to the surface to be processed of the substrate W as described above. Since it spreads over the entire Wa, the DIW is quickly expelled from the surface Wa to be processed of the substrate W. As a result, it is possible to suppress the generation of watermarks due to the residual DIW, and it is possible to suppress the residual particles on the hydrophobic substrate W.

Here, there are a case where the sequence processing of the third embodiment (with nozzle scan = with DIW supply position scan) is performed and a case where the sequence processing of the comparative example (without nozzle scan = without DIW supply position scan) is performed. The degree of residual particles (watermarks) with respect to the hydrophobic substrate W will be described with reference to FIG.

In FIG. 9, the substrate W on the left side is the result of the sequence processing according to the third embodiment, and the substrate W on the right side is the result of the sequence processing according to the comparative example. Black dots in the surface to be processed Wa of the substrate W indicate particles, and their residual positions are also indicated. The particles are measured using a normal particle counter.

As shown in FIG. 9, the surface to be processed Wa of the left substrate W has very few black spots as compared with the surface Wa to be processed of the right substrate W. That is, when the substrate processing based on the sequence processing (with nozzle scan) according to the third embodiment is performed, the number of particles is 1/5 to 1 as compared with the sequence processing (without nozzle scan) according to the comparative example. It is possible to reduce the number to about / 4, and it is possible to suppress the adhesion of particles to the hydrophobic substrate W.

As described above, according to the third embodiment, the same effect as that of the first embodiment can be obtained. Further, the processing liquid supply position (for example, DIW supply position) of the first nozzle 61 is moved from the center of the surface to be processed Wa of the substrate W toward the outside according to the spread of the volatile solvent (for example, IPA). This makes it possible to prevent the spread of the volatile solvent from being hindered by the treatment liquid, and the volatile solvent smoothly spreads over the entire surface Wa of the substrate W to be treated, so that the treatment liquid is volatile. The efficiency of substitution with a solvent can be further improved. Further, it is possible to suppress the residual particles on the hydrophobic substrate W, and it is possible to suppress the contamination of the substrate W.

<Fourth Embodiment>
A fourth embodiment will be described with reference to FIG. In the fourth embodiment, the difference from the first embodiment (nozzle linear movement mechanism) will be described, and other description will be omitted.

As shown in FIG. 10, the first nozzle moving mechanism 62 according to the fourth embodiment has a nozzle linear moving mechanism 62c in addition to the movable arm 62a and the arm swinging mechanism 62b according to the first embodiment. ing. The first nozzle moving mechanism 62 moves the first nozzle 61 and the second nozzle 71 individually by the nozzle linear moving mechanism 62c. Therefore, in the fourth embodiment, the second nozzle moving mechanism 72 according to the first embodiment is unnecessary and has been removed.

The nozzle linear movement mechanism 62c is provided on the extending movable arm 62a, supports the first nozzle 61 and the second nozzle 71, and supports the first nozzle 61 and the second nozzle 71 that support the support portion 40. It is moved in a straight line along the surface to be processed Wa of the upper substrate W. This makes it possible to move the liquid supply position (DIW supply position and IPA supply position) on the surface to be processed Wa of the substrate W on the support portion 40. Therefore, the nozzle linear movement mechanism 62c functions as a position moving portion that moves the processing liquid supply position in the direction along the surface to be processed Wa of the substrate W.

Here, as the nozzle linear moving mechanism 62c, for example, various moving mechanisms such as a linear motor type moving mechanism and a feed screw type moving mechanism can be used. The nozzle linear movement mechanism 62c is electrically connected to the control unit 80 (see FIG. 1), and its drive is controlled by the control unit 80.

As described above, according to the fourth embodiment, the same effect as that of the first embodiment can be obtained. Further, by moving the first nozzle 61 and the second nozzle 71 by the nozzle linear movement mechanism 62c common to them, it is possible to remove the second nozzle movement mechanism 72 according to the first embodiment. Therefore, the device configuration can be simplified as compared with the first embodiment.

<Fifth Embodiment>
A fifth embodiment will be described with reference to FIG. In the fifth embodiment, the difference from the first embodiment (nozzle swing mechanism) will be described, and other description will be omitted.

As shown in FIG. 11, the first nozzle moving mechanism 62 according to the fifth embodiment has a nozzle swing mechanism 62d in addition to the movable arm 62a and the arm swing mechanism 62b according to the first embodiment. ing. The first nozzle moving mechanism 62 swings the first nozzle 61 by the nozzle swing mechanism 62d.

The nozzle swing mechanism 62d is provided at the tip of the extending movable arm 62a, that is, at the end of the movable arm 62a opposite to the arm swing mechanism 62b. The nozzle swing mechanism 62d supports one end of the first nozzle 61 and swings the first nozzle 61 so as to rotate around one end of the supported first nozzle 61 as a rotation center. This makes it possible to move the liquid supply position (DIW supply position) on the surface to be processed Wa of the substrate W on the support portion 40. Therefore, the nozzle swing mechanism 62d functions as a position moving portion that moves the processing liquid supply position in the direction along the surface to be processed Wa of the substrate W.

Here, for example, the nozzle swing mechanism 62d has a motor (not shown) capable of changing the rotation direction. One end of the first nozzle 61 is connected at a right angle to the rotation shaft of this motor. As a result, one end of the first nozzle 61 is set as the center of rotation, and the first nozzle 61 can rotate. The nozzle swing mechanism 62d is electrically connected to the control unit 80 (see FIG. 1), and its drive is controlled by the control unit 80.

As described above, according to the fifth embodiment, the same effect as that of the first embodiment can be obtained. Further, as compared with the first embodiment and the fourth embodiment, the moving range of the first nozzle 61 when moving the processing liquid supply position can be narrowed.

<Sixth Embodiment>
A sixth embodiment will be described with reference to FIG. In the sixth embodiment, the difference from the first embodiment (nozzle swing mechanism) will be described, and other description will be omitted.

As shown in FIG. 12, in the sixth embodiment, the first nozzle moving mechanism 62 according to the first embodiment is removed, and the nozzle swing mechanism 62d is provided. The nozzle swing mechanism 62d swings the first nozzle 61.

The nozzle swing mechanism 62d is fixedly provided at the upper end of the peripheral wall of the cup 30. The nozzle swing mechanism 62d supports one end of the first nozzle 61 and swings the first nozzle 61 so as to rotate around one end of the supported first nozzle 61 as a rotation center. This makes it possible to move the processing liquid supply position (DIW supply position) on the surface to be processed Wa of the substrate W on the support portion 40. Therefore, the nozzle swing mechanism 62d functions as a position moving portion that moves the processing liquid supply position in the direction along the surface to be processed Wa of the substrate W. The processing liquid discharged from the nozzle 61 is supplied from an oblique direction with respect to the surface to be processed Wa of the substrate W on the support portion 40.

Here, for example, the nozzle swing mechanism 62d has a motor (not shown) capable of changing the rotation direction as in the fifth embodiment, and the first nozzle is on the rotation axis of this motor. One end of 61 is connected at a right angle. As a result, one end of the first nozzle 61 is set as the center of rotation, and the first nozzle 61 can rotate. The nozzle swing mechanism 62d is electrically connected to the control unit 80 (see FIG. 1), and its drive is controlled by the control unit 80.

As described above, according to the sixth embodiment, the same effect as that of the first embodiment can be obtained. Further, since the first nozzle moving mechanism 62 according to the first, fourth, and fifth embodiments can be removed, the device configuration is simplified as compared with the first, fourth, and fifth embodiments. can do. Further, since the first movable arm 62a that moves above the surface to be processed Wa of the substrate W on the support portion 40 is eliminated, particles (impurities such as dust and metal powder) fall from the first movable arm 62a. It is possible to suppress adhesion of the substrate W on the support portion 40 to the surface to be processed Wa, and it is possible to suppress contamination of the substrate W.

<7th Embodiment>
A seventh embodiment will be described with reference to FIG. In the seventh embodiment, the difference from the first embodiment (control of changing the nozzle discharge amount) will be described, and other description will be omitted.

As shown in FIG. 13, in the seventh embodiment, the first nozzle moving mechanism 62 according to the first embodiment is removed, and the nozzle 61 is fixedly provided to the upper end portion of the peripheral wall of the cup 30. .. Further, the control unit 80 controls the first liquid supply unit 63 and adjusts the discharge amount of the processing liquid (for example, DIW) discharged from the first nozzle 61. This makes it possible to move the processing liquid supply position (DIW supply position) on the surface to be processed Wa of the substrate W on the support portion 40. For example, the control unit 80 gradually reduces the discharge amount of the treatment liquid from the first nozzle 61 from the discharge amount at which the treatment liquid supply position is the center of the surface Wa to be processed of the substrate W, and supplies the treatment liquid. The position can be gradually moved along the direction outward from the center of the surface to be processed Wa of the substrate W. Therefore, the control unit 80 and the first liquid supply unit 63 function as a position moving unit that moves the processing liquid supply position in the direction along the surface to be processed Wa of the substrate W. The processing liquid discharged from the nozzle 61 is supplied from an oblique direction with respect to the surface to be processed Wa of the substrate W on the support portion 40.

As described above, according to the seventh embodiment, the same effect as that of the first embodiment can be obtained. Further, since the first nozzle moving mechanism 62 according to the first, fourth, and fifth embodiments can be removed, the device configuration is simplified as compared with the first, fourth, and fifth embodiments. can do. Further, since the nozzle swing mechanism 62d according to the sixth embodiment can be removed, the device configuration can be simplified as compared with the sixth embodiment. Further, since the first movable arm 62a that moves above the surface to be processed Wa of the substrate W on the support portion 40 is eliminated, foreign matter (dust, metal powder, etc.) falls from the first movable arm 62a and the support portion. It is possible to suppress the adhesion of the substrate W on the 40 to the surface Wa to be processed, and it is possible to suppress the contamination of the substrate W.

<Other Embodiments>
In each of the above-described embodiments, the amount of the processing liquid discharged from the first nozzle 61 to the surface to be processed Wa of the substrate W may be constant, but is not limited to this, for example. As the processing liquid supply position moves along the surface to be processed Wa of the substrate W along the direction outward from the center of the surface to be processed Wa, the surface to be processed Wa of the substrate W from the first nozzle 61 The amount of the treatment liquid discharged to, that is, the amount of the treatment liquid supplied to the surface Wa of the substrate W to be processed may be gradually or gradually reduced. This makes it possible to prevent the spread of the volatile solvent from being hindered by the treatment liquid, and the volatile solvent smoothly spreads over the entire surface Wa of the substrate W to be treated, so that the treatment liquid is volatile. The efficiency of substitution with a solvent can be further improved.

Further, in each of the above-described embodiments, the heating source is not used in the drying step, but the present invention is not limited to this, and for example, a heating portion that heats the surface to be treated Wa of the substrate W on the support portion 40 is used. You can do it. As the heating portion, for example, it is possible to use an irradiation portion that heats the surface to be treated Wa of the substrate W on the support portion 40 by irradiating it with light. The irradiated portion instantly heats the surface Wa of the substrate W to be treated, causing a Leidenfrost phenomenon (liquid beading), and the substrate W can be quickly dried. That is, by instantaneously heating the substrate W, the volatile solvent in contact with the pattern on the surface to be treated Wa of the substrate W is instantly vaporized, and the other portion of the substrate W on the surface to be treated Wa is volatilized. The sex solvent immediately becomes liquefied (liquid lumping phenomenon). The liquid balls thus generated are blown off from the substrate W by the centrifugal force due to the rotation of the substrate W, and the substrate W dries.

Further, in each of the above-described embodiments, the first nozzle 61 and the second nozzle 71 are not moved in the vertical direction (elevating direction), but the present invention is not limited to this, and the vertical moving mechanism (elevating mechanism) is used. It may be moved in the vertical direction. For example, when the liquid is supplied to the surface to be processed Wa of the substrate W on the support portion 40, the first nozzle 61 and the second nozzle 71 are lowered to the surface Wa to be processed of the substrate W on the support portion 40. Get closer. On the other hand, when moving the first nozzle 61 or the second nozzle 71 to the standby position, the first nozzle 61 or the second nozzle 71 is raised from the surface Wa of the substrate W on the support portion 40. keep away. At this time, the first nozzle 61 and the second nozzle 71 are raised to a position where they do not hit the cup 30 when moving from the supply position to the standby position (or from the standby position to the supply position). In order to avoid contact between the first nozzle 61 and the second nozzle 71 and the cup 30, the first nozzle 61 and the second nozzle 71 move from the supply position to the standby position (or from the standby position to the supply position). It is also possible to raise the first nozzle 61 and the second nozzle 71 during the movement.

Further, in the above embodiment, when the DIW supply position scan is performed, the DIW supply position is moved from the position of 30 mm, which is an example near the center, to the position of 200 mm beyond the outer circumference of the substrate, and then the DIW supply is supplied. An example of stopping is described. However, the present invention is not limited to this, and for example, the supply stop position of the DIW may be set as the outer peripheral edge of the substrate. Speaking of a 300 mm wafer, it is located 150 mm from the center of the wafer.

Although some embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

10 Substrate processing device 50 Rotation mechanism 61 First nozzle 62 First nozzle movement mechanism 62a Movable arm 62b Arm swing mechanism 62c Nozzle linear movement mechanism 62d Nozzle swing mechanism 63 First liquid supply unit 71 Second nozzle 80 Control unit W board Wa surface to be processed

Claims (7)

A rotation mechanism that rotates the substrate having the surface to be processed in a plane,
A first nozzle that supplies a treatment liquid to the surface to be treated of the substrate that is rotated by the rotation mechanism, and
A second nozzle that supplies a volatile solvent to the center of the surface to be processed, which is a position on the rotation axis of the rotation mechanism on the surface to be processed of the substrate that is rotated by the rotation mechanism.
A position moving portion for moving the first nozzle and
From a state where the treatment liquid is supplied to the center of the target surface of the substrate from the first nozzle, the process liquid supply position where the treatment liquid in the surface to be processed of the substrate is supplied, the first The first nozzle is moved so that the treatment liquid supplied from the nozzle is positioned near the center where the treatment liquid supplied from the nozzle can spread to the center of the surface to be processed of the substrate rotated by the rotation mechanism , and the treatment liquid is transferred to the treatment liquid. The treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, and the volatile solvent is supplied from the second nozzle to the center of the surface to be processed of the substrate. A control unit that controls the position moving unit so as to move the first nozzle so as to move the supply position along a direction outward from the center of the surface to be processed of the substrate.
A substrate processing apparatus comprising. The position moving portion moves the processing liquid supply position outward from the center of the surface to be processed of the substrate in accordance with the spread of the volatile solvent supplied from the second nozzle to the surface to be processed of the substrate. the substrate processing apparatus according to claim 1, characterized in that moving the first nozzle to move along. In the rotation mechanism, the processing liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, and the volatile solvent is supplied from the second nozzle to the center of the surface to be processed of the substrate. When the supplied state continues for a predetermined time, the rotation speed of the substrate is lowered to continue the rotation of the substrate.
The position moving portion moves the processing liquid supply position along the direction outward from the center of the surface to be processed of the substrate in a state where the substrate is rotating at the rotation speed of the substrate lowered by the rotation mechanism. The substrate processing apparatus according to claim 1 or 2 , wherein the first nozzle is moved so as to be moved. The substrate processing apparatus according to any one of claims 1 to 3 , wherein the volatile solvent is IPA. A process of rotating a substrate having a surface to be processed in a plane by a rotation mechanism,
A step of supplying the treatment liquid from the first nozzle to the center of the surface to be processed, which is a position on the rotation axis of the rotation mechanism on the surface to be processed of the substrate rotated by the rotation mechanism.
From a state where the treatment liquid is supplied to the center of the target surface of the substrate from the first nozzle, the process liquid supply position where the treatment liquid in the surface to be processed of the substrate is supplied, the first The first nozzle is moved by the position moving portion so that the processing liquid supplied from the nozzle is positioned near the center where the processing liquid supplied from the nozzle can spread to the center of the surface to be processed of the substrate rotated by the rotation mechanism. Moving process and
In a state where the treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, it volatilizes from the second nozzle to the center of the surface to be processed of the substrate rotated by the rotation mechanism. The process of supplying the sex solvent and
A state in which the treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, and the volatile solvent is supplied from the second nozzle to the center of the surface to be processed of the substrate. in a second moving step of moving the first nozzle by the position moving unit to move along a direction out of the process liquid supply position from the center of the target surface of the substrate,
A substrate processing method comprising. In the second moving step, the processing liquid supply position is moved from the center of the surface to be processed of the substrate to the outside according to the spread of the volatile solvent supplied from the second nozzle to the surface to be processed of the substrate. The substrate processing method according to claim 5 , wherein the substrate is moved along the direction of the substrate. A state in which the treatment liquid is supplied from the first nozzle to a position near the center of the surface to be processed of the substrate, and the volatile solvent is supplied from the second nozzle to the center of the surface to be processed of the substrate. Further has a step of lowering the rotation speed of the substrate by the rotation mechanism and continuing the rotation of the substrate before performing the second moving step.
In the second moving step, the processing liquid supply position is directed outward from the center of the surface to be processed of the substrate while the substrate is rotating at the rotation speed of the substrate lowered by the rotation mechanism. The substrate processing method according to claim 5 or 6 , wherein the substrate is moved along the same.

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