JP6865079B2 - Substrate processing equipment and substrate processing method - Google Patents

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Patent Document 1 discloses a technique for removing air bubbles in a filter unit provided in a processing liquid supply path for supplying a processing liquid. Specifically, Patent Document 1 describes a step of filling the inside of the filter section with a treatment liquid, a step of reducing the pressure inside the filter section to create a negative pressure atmosphere, a step of discharging the treatment liquid from a vent of the filter section, and a filter section. A liquid treatment method including a step of supplying the treated liquid through which the liquid has passed to the object to be treated is described.

Japanese Unexamined Patent Publication No. 2016-189493

In recent years, as the pore size of the filter has become smaller, the wettability of the filter has deteriorated. This increases the risk of an air layer (bubbles) being generated in the filter. When air bubbles are present in the filter, the filter's ability to remove foreign matter cannot be sufficiently exerted.

The present disclosure has been made in view of the above circumstances, and an object of the present disclosure is to suppress the presence of air bubbles in the filter.

The substrate processing apparatus according to one aspect of the present disclosure includes a treatment liquid path which is a route of a treatment liquid used for liquid treatment, a filter unit provided in the treatment liquid path to remove foreign substances in the treatment liquid, and a treatment liquid path. A switching unit for switching between a first state in which the treatment liquid is supplied to the filter unit via the above and a second state in which the gas that is more soluble in the treatment liquid than air is supplied to the filter unit via the treatment liquid path is provided. ..

In the substrate processing apparatus according to one aspect of the present disclosure, a gas that is more soluble in the treatment liquid than air is supplied to the filter unit via the treatment liquid path, which is the path of the treatment liquid. As a result, for example, when the treatment liquid is supplied to the filter unit after the easily soluble gas is supplied, the easily soluble gas is contained in the treatment liquid. Since such a easily soluble gas is easily dissolved in the treatment liquid, bubbles (bubbles of the easily soluble gas) are less likely to be generated. Further, even when the easily soluble gas becomes bubbles in the treatment liquid, the bubbles are easily dissolved in the treatment liquid, so that the bubbles can be expected to dissolve with the passage of time. From the above, according to the substrate processing apparatus according to the present disclosure, it is possible to suppress the presence of air bubbles in the filter unit. When the treatment liquid is a liquid containing water as a main component (for example, the water content is 50% by mass or more), carbon dioxide, chlorine, ammonia, nitrogen sulfide and the like are examples of gases that are more soluble than air. Carbon dioxide is easy to handle from the viewpoint of safety and cost.

The substrate processing apparatus may further include a dissolution promoting unit that performs a treatment for increasing the solubility of the gas in the processing liquid. As a result, the gas that is easily dissolved in the treatment liquid can be more easily dissolved in the treatment liquid, and the presence of air bubbles in the filter unit can be more preferably suppressed.

The dissolution promoting unit may be a degassing unit that degass the treatment liquid or a cooling unit that cools the treatment liquid. By degassing the treatment liquid and cooling the treatment liquid, the amount of gas dissolved in the treatment liquid can be increased, and the dissolution of the gas can be promoted.

The substrate processing apparatus may further include a control unit configured to control the switching unit so as to switch to the first state after the second state. As a result, the treatment liquid can be supplied to the filter unit in the first state after filling the filter unit with a gas that is easily dissolved in the second state. This makes it possible to preferably suppress the presence of air bubbles in the filter unit.

The substrate processing apparatus further includes a flow rate adjusting unit that adjusts the flow rate of the processing liquid flowing through the processing liquid path in the first state, and the control unit further fills the processing liquid in the process of filling the filter unit with the processing liquid. It may be configured to further control the flow rate regulator so that the flow rate gradually increases. When the filling is performed at a high flow rate from the beginning, the treatment liquid may flow only to a place where the treatment liquid can easily pass, and the entire filter unit may not be wet. In this respect, by gradually increasing the flow velocity, the filter unit can be wetted in order from the lower part, and the treatment liquid can be filled while ensuring sufficient wettability.

The switching unit can switch to the third state in which neither the processing liquid nor the gas is supplied, and the control unit continues the first state until the processing liquid is filled in the filter unit, and after filling, the first state is changed to the first state. It may be configured to further control the switching unit so as to switch to the three states. As a result, after filling the filter unit, both the treatment liquid and the gas are not supplied (leaved) to the filter unit. Since easily soluble gas bubbles can be expected to dissolve in the treatment liquid over time, it is possible to suppress the presence of bubbles in the filter unit while suppressing the consumption of the treatment liquid by leaving the gas after filling. it can.

The control unit may be configured to further control the flow rate adjusting unit so that the flow rate of the processing liquid after the filter unit is filled with the processing liquid is smaller than that before the filling. By continuing to flow a small amount of the treatment liquid even after filling, the treatment liquid continues to flow in the filter unit, and the permeation of the treatment liquid into the filter unit is promoted by the capillary phenomenon. Thereby, dissolution of bubbles can be promoted. Further, by continuing to flow a small amount of the treatment liquid, a new treatment liquid before the gas is dissolved can flow into the filter unit, and the solubility of the treatment liquid can be ensured.

The treatment liquid paths include a first path for introducing the treatment liquid into the filter unit, a second path for discharging the treatment liquid from the filter unit, and a third path for guiding the treatment liquid from the filter unit to a nozzle for supplying the treatment liquid. The first valve provided in the second path and the second valve provided in the third path are further provided, and the control unit opens the first valve and opens the second valve in the second state. It is executed by switching between closing and supplying gas from the first path to the second path and closing the first valve and opening the second valve to supply gas from the first path to the third path. In the first state, the first valve is opened and the second valve is closed to supply the treatment liquid from the first path to the second path, and the first valve is closed and the second valve is opened to open the second valve from the first path to the first. It may be configured to switch between supplying the treatment liquid to the three routes and executing the treatment liquid. As a result, the gas can be supplied and the treatment liquid can be supplied to both the drain side path and the nozzle side path in the filter unit. That is, it is possible to suppress the presence of bubbles evenly in the filter unit.

The substrate processing apparatus further includes a first densitometer provided in the second path for measuring the gas concentration and a second densitometer provided in the third path for measuring the gas concentration, and is a control unit. Is configured to further perform determining whether or not to switch from the second state to the first state according to the values of the first densitometer and the second densitometer in the second state. When it is determined, the switching unit may be controlled so as to switch from the second state to the first state. This makes it possible to switch from the second state to the first state after confirming that the filter unit is sufficiently filled with gas. This makes it possible to more preferably suppress the presence of air bubbles in the filter unit.

The substrate treatment method according to one aspect of the present disclosure includes a step of supplying a gas that is more soluble in the treatment liquid than air to the treatment liquid path provided with a filter, which is a path of the treatment liquid used for the liquid treatment, and a gas. After the step of supplying the treatment liquid, the step of supplying the treatment liquid to the treatment liquid path is included.

According to the present disclosure, the presence of air bubbles in the filter unit can be suppressed.

It is a perspective view which shows the schematic structure of the substrate processing system. It is sectional drawing which follows the line II-II in FIG. It is sectional drawing which follows the line III-III in FIG. It is a figure for demonstrating the filter unit provided in the processing liquid path. It is a figure for demonstrating the supply of carbon dioxide gas to a filter unit, (a) is a figure about supply of carbon dioxide gas to a primary side, (b) is a figure about supply of carbon dioxide gas to a secondary side. It is a figure for demonstrating the supply of a processing liquid to a filter unit, (a) is a figure concerning the supply of a processing liquid to a primary side, and (b) is a figure concerning the supply of a processing liquid to a secondary side. It is a schematic diagram of the filter unit to which the treatment liquid was supplied, (a) is a figure concerning the supply of the treatment liquid to the primary side, (b) is the secondary side. It is a vertical cross-sectional view explaining an example of air bubble removal in a filter unit, (a) is at the start of filling, (b) is at the completion of filling, (c) is after a predetermined time has passed from (b), and (d) is (d). It is a figure which shows the filter unit after the elapse of a predetermined time from c). It is a vertical cross-sectional view explaining an example of air bubble removal in a filter unit, (a) is at the start of filling, (b) is at the completion of filling, (c) is after a predetermined time has passed from (b), and (d) is (d). It is a figure which shows the filter unit after the elapse of a predetermined time from c). It is a hardware block diagram of a controller. It is a flowchart of liquid processing. It is a figure which shows the line structure of the treatment liquid path which concerns on a comparative example. It is a figure explaining the inside of the filter unit in the comparative example. It is a figure which shows the amount of gas which dissolves in water for each temperature of water, (a) is an example of carbon dioxide as a gas, (b) is an example of oxygen as a gas, and (c) is an example of nitrogen as a gas. It is a figure which shows the cooling part which is a dissolution promotion part which concerns on the modification, (a) is a figure which shows a cooling bath, (b) is a figure which shows a cooling tank, (c) is a figure which shows a cooling cover.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same function are designated by the same reference numerals, and duplicate description will be omitted.

[Board processing system]
The substrate processing system 1 is a system that forms a photosensitive film, exposes the photosensitive film, and develops the photosensitive film on the substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 exposes the resist film formed on the wafer W. Specifically, the exposed portion of the resist film is irradiated with energy rays by a method such as immersion exposure. The coating / developing device 2 performs a process of forming a resist film on the surface of the wafer W before the exposure process by the exposure device 3, and develops the resist film after the exposure process.

(Applying / developing equipment)
Hereinafter, the configuration of the coating / developing device 2 will be described as an example of the substrate processing device. As shown in FIGS. 1 to 3, the coating / developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.

The carrier block 4 introduces the wafer W into the coating / developing device 2 and derives the wafer W from the coating / developing device 2. For example, the carrier block 4 can support a plurality of carriers 11 for the wafer W, and has a built-in transfer arm A1. The carrier 11 accommodates, for example, a plurality of circular wafers W. The transfer arm A1 takes out the wafer W from the carrier 11 and passes it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. As shown in FIGS. 2 and 3, the processing modules 14, 15, 16 and 17 include a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm A3 for transporting the wafer W to these units. Built-in. The processing module 17 further incorporates a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies the treatment liquid to the surface of the wafer W. The heat treatment unit U2 has, for example, a hot plate and a cooling plate built-in, and heats the wafer W by the hot plate, and cools the heated wafer W by the cooling plate to perform heat treatment.

The processing module 14 forms an underlayer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid treatment unit U1 of the treatment module 14 coats the treatment liquid for forming the underlayer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments accompanying the formation of the underlayer film.

The treatment module 15 forms a resist film on the lower layer film by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 of the treatment module 15 coats the treatment liquid (coating liquid) for forming the resist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film. Details of the liquid processing unit U1 of the processing module 15 will be described later.

The treatment module 16 forms an upper layer film on the resist film by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 of the treatment module 16 applies a treatment liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 17 develops the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid treatment unit U1 of the treatment module 17 applies a treatment liquid (developer) for development on the surface of the exposed wafer W, and then rinses this with a treatment liquid (rinse liquid) for cleaning to resist. The film is developed. The heat treatment unit U2 of the processing module 17 performs various heat treatments associated with the development process. Specific examples of the heat treatment include heat treatment before development treatment (PEB: Post Exposure Bake), heat treatment after development treatment (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The elevating arm A7 elevates the wafer W between the cells of the shelf unit U10. A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer arm A8 and is connected to the exposure apparatus 3. The transfer arm A8 passes the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns the wafer W to the shelf unit U11.

The controller 100 controls the coating / developing device 2 so as to execute the coating / developing process in the following procedure, for example.

First, the controller 100 controls the transfer arm A1 so as to convey the wafer W in the carrier 11 to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 14.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14, and forms an underlayer film on the surface of the wafer W. The liquid treatment unit U1 and the heat treatment unit U2 are controlled in this way. After that, the controller 100 controls the transport arm A3 so as to return the wafer W on which the underlayer film is formed to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 15.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15, and forms a resist film on the lower film of the wafer W. The liquid treatment unit U1 and the heat treatment unit U2 are controlled so as to do so. After that, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 16.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and the liquid processing unit so as to form an upper layer film on the resist film of the wafer W. Controls U1 and heat treatment unit U2. After that, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 17.

Next, the controller 100 directly controls the transfer arm A6 so as to transfer the wafer W of the shelf unit U10 to the shelf unit U11, and controls the transfer arm A8 so as to send the wafer W to the exposure apparatus 3. After that, the controller 100 controls the transfer arm A8 so as to receive the exposed wafer W from the exposure apparatus 3 and return it to the shelf unit U11.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and the liquid processing unit U1 and the liquid processing unit U1 and the liquid processing unit U1 so as to develop the resist film of the wafer W. The heat treatment unit U2 is controlled. After that, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the elevating arm A7 and the transfer arm A1 so as to return the wafer W to the carrier 11. This completes the coating / developing process.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 illustrated above. The substrate processing apparatus may be any as long as it includes a liquid processing unit U1 for developing processing (liquid processing unit U1 of the processing module 17) and a controller 100 capable of controlling the liquid processing unit U1.

[Liquid treatment unit]
Subsequently, the liquid processing unit U1 of the processing module 17 will be described in detail. The liquid treatment unit U1 is a developing process for supplying a developing solution and then a rinsing liquid to a wafer W having a resist film after exposure, and a filter for removing foreign substances in the liquid by each of the developing liquid and rinsing liquid supply systems. A wetting process is performed in which the liquid is passed through the unit 30. That is, the liquid treatment unit U1 partially includes a developer supply system and a rinse liquid supply system. The developer is a liquid containing water as a main component. As the rinsing liquid, DIW or a liquid containing water as a main component and additives is used.

(Treatment liquid supply unit)
FIG. 4 shows a configuration example of the rinse liquid supply system. The rinse liquid (treatment liquid) supply system processes the treatment liquid supply source 20, the gas supply source 50, the switching valve V14 (switching unit), the treatment liquid path 70, the filter unit 30, and the liquid treatment unit 90. It has a nozzle 93 for discharging liquid, a degassing unit 60, and a controller 100 (control unit). A treatment liquid path 70, which is a pipe, is connected to the nozzle 93, and the treatment liquid path 70 is provided with a treatment liquid supply source 20, a pump (not shown), and a filter unit 30 from the upstream side. The treatment liquid flows downstream from the treatment liquid supply source by N2 pressurization, and the treatment liquid filtered by the filter unit 30 is ejected from the nozzle 93.

(Treatment liquid path)
The treatment liquid path 70 is a route of the treatment liquid used for the liquid treatment (development processing and wetting treatment described above), and is a pipe extending from the treatment liquid supply source 20 on the upstream side to the nozzle 93 of the liquid treatment unit 90. .. Further, the treatment liquid path 70 is a path for carbon dioxide gas in the wetting process, and is connected to the gas supply source 50. Further, the treatment liquid path 70 is a discharge path of the treatment liquid in the wetting process, and is connected to a drainage path (not shown).

The treatment liquid path 70 includes a first path 71 for introducing the treatment liquid into the filter unit 30, a second path 72 for discharging the treatment liquid from the filter unit 30, and a nozzle 93 for supplying the treatment liquid from the filter unit 30. It has a third path 73, which leads to. The first path 71 connects the switching valve V14 and the filter unit 30. The second path 72 connects the filter unit 30 and the drainage path (drain) (not shown). The third path 73 connects the filter unit 30 and the nozzle 93.

A branch point bp is provided in the third path 73. The third path 73 branches from the branch point bp into a nozzle-side branch path 73a and an exhaust path-side branch path 73b. The nozzle-side branch path 73a connects the branch point bp and the nozzle 93. A valve V15 is provided in the nozzle-side branch path 73a. The exhaust path side branch path 73b connects the branch point bp and the drainage path (not shown).

A valve V18 (first valve) is provided in the second path 72. A valve V19 (second valve) is provided in the third path 73 (specifically, the exhaust path side branch path 73b which is a branch path of the third path 73). Further, the second path 72 is provided with a first concentration meter CS1 for measuring the concentration of carbon dioxide gas. The first densitometer CS1 is provided, for example, downstream of the valve V18 in the second path 72. Further, the third path 73 is provided with a second concentration meter CS2 for measuring the concentration of carbon dioxide gas. The second densitometer CS2 is provided, for example, upstream of the branch point bp in the third path 73. The first densitometer CS1 and the second densitometer CS2 are not limited as long as they can measure the concentration of carbon dioxide gas. Further, the first densitometer CS1 and the second densitometer CS2 do not have to be always provided at the above-mentioned installation location, and may be a handy type installed only at the time of measurement.

(Filter unit)
The filter unit 30 is provided in the treatment liquid path 70 and collects and removes foreign substances (particles) in the treatment liquid. The configuration of the filter unit 30 will be described with reference to the vertical cross-sectional view of FIG. 8A. The filter unit 30 has a cartridge 31 and a capsule 32 that surrounds the cartridge 31. The cartridge 31 has an upright inner cylinder portion 33, a holding portion 34 that covers the periphery of the inner cylinder portion 33, and a filtration member 35 that is provided in the holding portion 34 so as to surround the side circumference of the inner cylinder portion 33. .. The filtration member 35 is formed by bending a membrane member made of, for example, a non-woven fabric. The filtration member 35 is dry when the filter unit 30 is attached, but is immersed in the treatment liquid at the time of use.

A flow path 301 is formed in the inner cylinder portion 33. An opening 302 is formed on the side wall of the inner cylinder portion 33, an opening 303 is formed on the side wall of the holding portion 34, and an opening 304 is formed on the upper portion of the holding portion 34. The flow path 301, the opening 302, and the opening 304 communicate with each other. The filtration member 35 is provided so as to block between the openings 302 and 303. Ports 331, 332, and 333 are provided on the upper portion of the capsule 32.

The port 331 is a processing liquid introduction port connected to the first path 71 of the processing liquid path 70. A guide member 36 is provided in the capsule 32, and the treatment liquid flowing in from the port 331 is guided by the guide member 36 so as to pass through the bottom side of the capsule 32 and then head upward. A flow path 314 is formed between the guide member 36 and the inner wall of the capsule 32. A flow path 315 is formed in the lower part of the cartridge 31 in the horizontal direction so as to be continuous with the lower end of the flow path 314. Further, a flow path 316 is formed along the outer wall of the holding portion 34 so as to be continuous with the flow path 315. The port 332 is a processing liquid discharge port connected to the third path 73 of the processing liquid path 70, and discharges the processing liquid filtered by the filter unit 30 toward the nozzle 93. The port 332 is open to the opening 304 of the cartridge 31. The port 333 is a drain (venting) port connected to the second path 72 of the treatment liquid path 70. Port 333 is open to flow path 316.

The filter unit 30 has a primary side path 37 (see FIG. 8A) through which the treatment liquid flows in the order of port 331, flow path 314, flow path 315, flow path 316, and port 333. In the primary side path 37, the port 331 (one end) is continuous with the first path 71, and the port 333 (the other end) is continuous with the second path 72. Further, the filter unit 30 has a secondary side path 38 (see FIG. 8B) through which the treatment liquid flows in the order of the port 331, the filtration member 35, the opening 304, and the port 332. In the secondary side path 38, the port 331 (one end) is continuous with the first path 71, and the port 332 (the other end) is continuous with the third path 73.

(Switching valve)
The switching valve V14 is a switching valve provided in the processing liquid path 70. The switching valve V14 is a gas that is more soluble in the treatment liquid than air in the first state in which the treatment liquid is supplied to the filter unit 30 via the treatment liquid path 70 and in the filter unit 30 via the treatment liquid path 70. It is a valve that switches between the second state in which gas is supplied. Further, the switching valve V14 can switch to a third state in which the processing liquid is not supplied from the processing liquid supply source 20 and carbon dioxide gas is not supplied from the gas supply source 50, in addition to the first state and the second state. is there. That is, the switching valve V14 is connected to the first path 71 and opens the valve of the processing liquid line 711 connected to the processing liquid supply source 20 according to the control of the controller 100 (see FIG. 6, first state). , Open the valve of the gas line 712 connected to the gas supply source 50 (see FIG. 5, second state), and close both the valves of the treatment liquid line 711 and the gas line 712 (see FIG. 4, third state). ) Can be switched.

(Processing liquid supply source)
The treatment liquid supply source 20 supplies the treatment liquid to the treatment liquid path 70. The treatment liquid supply source 20 includes a bottle 21 and a pressurizing device 22. The bottle 21 is a closed type bottle for storing the treatment liquid. The pressurizing device 22 is a device that pressurizes the inside of the bottle 21 with nitrogen gas. The pressurizing device 22 functions as a flow rate adjusting unit that adjusts the flow rate of the processing liquid flowing through the processing liquid path 70 in the first state according to the control of the controller 100. The flow rate of the processing liquid in the first state may be adjusted not by the pressurizing device 22 but by, for example, a flow rate adjusting valve. The pressurizing device 22 and the bottle 21 are connected by a pipe via a valve V11.

(Gas supply source)
The gas supply source 50 supplies carbon dioxide gas to the treatment liquid path 70. The gas supply source 50 is connected to the switching valve V14 via the gas line 712. The gas line 712 is provided with a valve V50. The gas supply source 50 may supply a gas other than carbon dioxide gas, which is more soluble in the treatment liquid than air.

(Degassing part)
The degassing unit 60 is a dissolution promoting unit that performs a treatment for increasing the solubility of carbon dioxide gas in the processing liquid by degassing the treatment liquid. Degassing refers to removing dissolved gas from a liquid. The method of degassing by the degassing unit 60 is not limited, and for example, a degassing module that uses a three-layer composite hollow fiber membrane to create a vacuum outside the membrane may be used, or a PCS pump or the like may be used. Good. The degassing unit 60 may be provided upstream of the location where the treatment liquid merges with the carbon dioxide gas, that is, upstream of the switching valve V14, and is provided, for example, in the treatment liquid line 711.

(controller)
The controller 100 is configured to execute controlling the switching valve V14 so as to switch to the first state after the second state.

The controller 100 is configured to further control the pressurizing device 22 so that the filling speed of the processing liquid gradually increases in the process of filling the filter unit 30 with the processing liquid.

The controller 100 is configured to continue the first state until the processing liquid is filled in the filter unit 30, and further control the switching valve V14 so as to switch from the first state to the third state after filling. ing.

The controller 100 may be configured to further control the pressurizing device 22 so that the flow rate of the processing liquid after the treatment liquid is filled in the filter unit 30 is smaller than that before the filling. ..

In the second state, the controller 100 opens the valve V18 and closes the valve V19 to move from the first path 71 to the second path 72 (that is, to the primary path 37 of the filter unit 30 (see FIG. 7A)). ) Supplying carbon dioxide gas, closing valve V18 and opening valve V19, carbon dioxide from the first path 71 to the third path 73 (ie, to the secondary side path 38 (see FIG. 7B)). The supply of carbon gas is switched and executed, and in the first state, the valve V18 is opened and the valve V19 is closed, from the first path 71 to the second path 72 (that is, the primary side path of the filter unit 30). 37 (see FIG. 7 (a)) is supplied, the valve V18 is closed and the valve V19 is opened, and the first path 71 to the third path 73 (that is, the secondary side path 38 (that is, the secondary side path 38)). 7 (b))) is configured to be switched between supplying the treatment liquid and executing the treatment liquid.

The controller 100 is configured to further execute determining whether or not to switch from the second state to the first state according to the values of the first densitometer CS1 and the second densitometer CS2 in the second state. When it is determined to switch, the switching valve V14 is controlled so as to switch from the second state to the first state.

As shown in FIG. 4, the controller 100 has a valve control unit 101, a switching determination unit 102, and a flow rate control unit 103 as functional modules.

The valve control unit 101 controls each valve provided in the liquid treatment unit U1. The valve control unit 101 controls each valve in both the wetting process and the developing process. In the wetting process, the valve control unit 101 first controls each valve so that the carbon dioxide gas is supplied to the processing liquid path 70 in the second state, and then the processing liquid is supplied to the processing liquid path 70. Each valve is controlled so as to be in the first state. That is, the valve control unit 101 controls a valve such as the switching valve V14 so as to switch to the first state after the second state. Hereinafter, the control in the second state may be described as a gas supply control, and the control in the first state may be described as a processing liquid supply control. As will be described later, in gas supply control, the valve control unit 101 opens the valve V18 and closes the valve V19 to supply carbon dioxide gas to the primary side path 37 of the filter unit 30, and closes the valve V18. The valve V19 is opened to supply carbon dioxide gas to the secondary side path 38 of the filter unit 30, and the operation is switched. Further, as will be described later, in the processing liquid supply control, the valve control unit 101 opens the valve V18 and closes the valve V19 to supply the processing liquid to the primary side path 37 of the filter unit 30, and the valve V18. At the same time as closing, the valve V19 is opened to supply the processing liquid to the secondary side path 38 of the filter unit 30, and the operation is switched.

In the gas supply control, the valve control unit 101 opens the valve V50 and the valve V18 among the valves (state of FIG. 4) closed in the initial state, and opens the valve of the gas line 712. Controls the switching valve V14. In this state, as shown in FIG. 5A, carbon dioxide gas supplied from the gas supply source 50 flows into the filter unit 30 via the gas line 712 and the first path 71. The carbon dioxide gas passes through the primary side path 37 of the filter unit 30 and flows from the second path 72 toward the exhaust path 201. As a result, the primary side path 37 of the filter unit 30 is filled with carbon dioxide gas.

Subsequently, the valve control unit 101 closes the valve V18 and opens the valve V19. In this state, as shown in FIG. 5B, carbon dioxide gas supplied from the gas supply source 50 flows into the filter unit 30 via the gas line 712 and the first path 71. The carbon dioxide gas passes through the secondary side path 38 of the filter unit 30 and flows from the exhaust path side branch path 73b in the exhaust path (not shown) direction. As a result, the secondary side path 38 of the filter unit 30 is filled with carbon dioxide gas. The valve control unit 101 closes all the valves when the gas supply control is completed. The valve control unit 101 switches from the gas supply control to the processing liquid supply control when the switching determination unit 102 determines that the second state is switched to the first state (switching from the gas supply control to the processing liquid supply control). ..

In the processing liquid supply control, the valve control unit 101 opens the valve V11 and the valve V18 among the valves (state of FIG. 4) closed in the initial state, and opens the valve of the processing liquid line 711. The switching valve V14 is controlled so as to. In this state, when the pressurizing device 22 is controlled by the flow rate control unit 103 and the bottle 21 is pressurized, it is supplied from the processing liquid supply source 20 as shown in FIGS. 6A and 7A. The treated liquid flows into the filter unit 30 via the treatment liquid line 711 and the first path 71. The treatment liquid passes through the primary side path 37 from the port 331 of the filter unit 30 toward the port 333, and flows from the second path 72 in the drainage path (not shown). As a result, the treatment liquid flows through the primary side path 37 of the filter unit 30 which has been filled with carbon dioxide gas in the gas supply control in advance.

Subsequently, the valve control unit 101 closes the valve V18 and opens the valve V19. In this state, when the pressurizing device 22 is controlled by the flow rate control unit 103 and the bottle 21 is pressurized, it is supplied from the processing liquid supply source 20 as shown in FIGS. 6 (b) and 7 (b). The treated liquid flows into the filter unit 30 via the treatment liquid line 711 and the first path 71. The treatment liquid passes through the secondary side path 38 from the port 331 of the filter unit 30 toward the port 332, and flows from the exhaust path side branch path 73b in the drainage path (not shown). As a result, the treatment liquid flows through the secondary side path 38 of the filter unit 30 that has been filled with carbon dioxide gas in the gas supply control in advance. The valve control unit 101 may fill the filter unit 30 with the treatment liquid while alternately repeating the supply of the treatment liquid to the primary side path 37 and the supply of the treatment liquid to the secondary side path 38. At that time, it is preferable to gradually increase the flow rate.

The valve control unit 101 continues the processing liquid supply control (control to be in the first state) until the processing liquid is filled in the filter unit 30, and the switching valve V14 or the like is used to switch from the first state to the third state after filling. Control the valve. Filling the filter unit 30 with the treatment liquid also includes a state in which air bubbles remain in the treatment liquid. For example, the valve control unit 101 controls the switching valve V14 so as to be in the third state after performing the processing liquid supply control for a predetermined time required for filling the filter unit 30 with the processing liquid, and another valve. Is closed. By setting the switching valve V14 to the third state, new processing liquid does not flow into the filter unit 30. Further, by closing the other valves, the backflow of the processing liquid in the filter unit 30 is prevented.

The state in the filter unit 30 when such control is performed will be described with reference to FIG. When the filling of the processing liquid is started and a predetermined time elapses with respect to the filter unit 30 after the gas supply control shown in FIG. 8 (a), the processing liquid is transferred to the filter unit as shown in FIG. 8 (b). Fill in 30. At this point, carbon dioxide gas bubbles CB will be present in the treatment liquid. In this state, when the inflow of the treatment liquid is stopped while preventing backflow and a certain period of time elapses, as shown in FIG. 8C, the carbon dioxide gas bubble CB in the filter unit 30 gradually changes. Dissolve in the treatment solution. After a further lapse of time, as shown in FIG. 8D, the carbon dioxide gas bubble CB in the filter unit 30 is completely dissolved in the treatment liquid.

Instead of controlling the valve such as the switching valve V14 so that the valve control unit 101 switches from the first state to the third state after the processing liquid is filled, the valve control unit 101 is the first even after the processing liquid is filled in the filter unit 30. The switching valve V14 or the like may be controlled so as to continue one state. In this case, the flow rate control unit 103, which will be described later, adjusts the flow rate (details will be described later).

In the developing process after the wetting process, the valve control unit 101 opens the valve V11 and the valve V15, and controls the switching valve V14 so that the valve of the processing liquid line 711 is opened. In this state, the flow rate control unit 103 adjusts the pressure by the pressurizing device 22, so that the supply of the processing liquid from the nozzle 93 to the wafer W is started.

When the new filter unit 30 is mounted in a state where the treatment liquid is filled, the new filter unit 30 is installed after the treatment of pushing out the treatment liquid (purging the treatment liquid path 70) with carbon dioxide gas. It may be attached. As a result, the filter unit 30, the valve, and the like can be replaced more safely.

The switching determination unit 102 switches from the second state to the first state (switches to the processing liquid supply control) according to the values of the first densitometer CS1 and the second densitometer CS2 in the second state (during gas supply control). Judge whether or not. The switching determination unit 102 acquires the concentration of carbon dioxide gas from the first densitometer CS1 and the second densitometer CS2 at predetermined time intervals, for example. The switching determination unit 102 determines that the processing liquid supply control is switched to, for example, when the concentration of carbon dioxide gas acquired from the first densitometer CS1 and the second densitometer CS2 is equal to or higher than a predetermined value. The switching determination unit 102 outputs a switching command to the valve control unit 101 when it is determined to switch to the processing liquid supply control.

The flow rate control unit 103 controls the flow rate of the processing liquid in the developing process and the wetting process. The flow rate control unit 103 controls the flow rate of the processing liquid in the wetting process by controlling the pressurizing device 22. Specifically, the flow rate control unit 103 controls the pressurizing device 22 so that the filling speed of the processing liquid gradually increases in the process of filling the filter unit 30 with the processing liquid. It should be noted that the gradual increase in speed may mean that the flow rate constantly increases, or that the flow rate gradually increases.

Further, in the flow rate control unit 103, when the first state is continued even after the treatment liquid is filled in the filter unit 30, the flow rate of the treatment liquid after the treatment liquid is filled in the filter unit 30 is before filling. The pressurizing device 22 may be controlled so as to be less than.

The state in the filter unit 30 when such control is performed will be described with reference to FIG. When the filling of the processing liquid is started and a predetermined time elapses with respect to the filter unit 30 after the gas supply control shown in FIG. 9 (a), the processing liquid is transferred to the filter unit as shown in FIG. 9 (b). Fill in 30. At this point, carbon dioxide gas bubbles CB will be present in the treatment liquid. In this state, if the inflow of the treatment liquid is continued at a flow rate smaller than that before filling, the permeation of the treatment liquid into the filter unit 30 is promoted by the capillary phenomenon, and as shown in FIG. 9C, the filter unit The carbon dioxide gas bubble CB in 30 gradually dissolves in the treatment liquid. When the inflow of the treatment liquid is further continued, as shown in FIG. 9D, the carbon dioxide gas bubble CB in the filter unit 30 is completely dissolved in the treatment liquid.

The controller 100 is composed of one or a plurality of control computers. For example, the controller 100 has a circuit 120 shown in FIG. The circuit 120 has one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125.

The input / output port 124 inputs / outputs an electric signal between each valve such as the switching valve V14, the first densitometer CS1, the second densitometer CS2, the pressurizing device 22, and the pump 25. The timer 125 measures the elapsed time, for example, by counting a reference pulse having a fixed cycle. The storage 123 has a computer-readable recording medium such as a hard disk. The recording medium records a program for executing the substrate processing procedure described later. The recording medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 122 temporarily records the program loaded from the recording medium of the storage 123 and the calculation result by the processor 121. The processor 121 constitutes each of the above-mentioned functional modules by executing the above program in cooperation with the memory 122.

The hardware configuration of the controller 100 is not necessarily limited to the one in which each functional module is configured by a program. For example, each functional module of the controller 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the logic circuit is integrated.

[Liquid treatment procedure]
Next, as an example of the substrate processing method, the liquid processing procedure executed by the liquid processing unit U1 according to the control of the controller 100 will be described. As shown in FIG. 11, the controller 100 executes steps S1, S2, S3, S4, and S5 in order. Steps S1 to S4 are processes related to a wetting process in which the process solution is passed through the filter unit 30, and steps S5 are processes for supplying the process solution (in the order of the developer solution and then the rinse solution) to the wafer W. This is the process. More specifically, steps S1 and S2 are processes related to the above-mentioned gas supply control, and steps S3 and S4 are processes related to the above-mentioned processing liquid supply control.

In step S1, the controller 100 controls each valve so that carbon dioxide gas is supplied to the primary side path 37 of the filter unit 30. Specifically, the valve control unit 101 opens the valve V50 and the valve V18 among the valves (state of FIG. 4) closed in the initial state, and opens the valve of the gas line 712. Controls the switching valve V14.

Subsequently, in step S2, the controller 100 controls each valve so that carbon dioxide gas is supplied to the secondary side path 38 of the filter unit 30. Specifically, the valve control unit 101 closes the valve V18 and opens the valve V19.

Subsequently, in step S3, the controller 100 controls each valve so that the processing liquid is supplied to the primary side path 37 of the filter unit 30. Specifically, the valve control unit 101 opens the valve V11 and the valve V18 among the valves (state of FIG. 4) closed in the initial state, and opens the valve of the processing liquid line 711. Controls the switching valve V14. In this state, the pressurizing device 22 is controlled by the flow rate control unit 103 to pressurize the bottle 21, so that the processing liquid supplied from the processing liquid supply source 20 passes through the processing liquid line 711 and the first path 71. It flows into the filter unit 30.

Subsequently, in step S4, the controller 100 controls each valve so that the processing liquid is supplied to the secondary side path 38 of the filter unit 30. Specifically, the valve control unit 101 closes the valve V18 and opens the valve V19.

Subsequently, in step S5, the controller 100 controls so that the processing liquid supply to the wafer W is started from the nozzle 93. Specifically, the valve control unit 101 opens the valve V11 and the valve V15, and controls the switching valve V14 so that the valve of the processing liquid line 711 is opened. In this state, the flow rate control unit 103 drives a pump (not shown) to start supplying the processing liquid from the nozzle 93 to the wafer W.

[Action effect]
The action and effect of the liquid treatment unit U1 according to the present embodiment will be described in comparison with the configuration according to the comparative example. As shown in FIG. 12, in the treatment liquid path 170 according to the comparative example, the treatment liquid is supplied from the treatment liquid supply source to the filter unit 30 via the valve V114. In recent years, as the pore size of the filter unit has become smaller, the wettability of the filter unit has deteriorated. As a result, as shown in FIG. 13, there is an increased risk that an air layer (bubble AB) is generated in the filter unit. When air bubbles AB are present in the filter unit, the foreign matter removing force of the filter unit cannot be sufficiently exerted. Further, if the filter unit has a non-wet area, the area may not be sufficiently cleaned and dust may continue to be generated.

On the other hand, as shown in FIG. 4, the liquid treatment unit U1 according to the present embodiment is provided in the treatment liquid path 70, which is the path of the treatment liquid used for the liquid treatment, and the treatment liquid path 70, and is provided for treatment. The filter unit 30 for removing foreign substances in the liquid, the first state in which the treatment liquid is supplied to the filter unit 30 via the treatment liquid path 70, and the filter unit 30 via the treatment liquid path 70 to the treatment liquid rather than air. It is provided with a switching valve V14 for switching between a second state in which easily soluble carbon dioxide gas is supplied. That is, unlike the configuration according to the comparative example described above, it is possible to supply not only the treatment liquid but also carbon dioxide gas via the switching valve V14. As a result, for example, when the treatment liquid is supplied to the filter unit 30 after the carbon dioxide gas is supplied, the treatment liquid contains the carbon dioxide gas. Since carbon dioxide gas is easily dissolved in the treatment liquid, bubbles are less likely to be generated. Further, even when the carbon dioxide gas becomes bubbles in the treatment liquid, the bubbles are easily dissolved in the treatment liquid, so that the bubbles can be expected to dissolve with the passage of time. From the above, according to the liquid treatment unit U1, it is possible to suppress the presence of air bubbles in the filter unit 30. Further, according to the liquid treatment unit U1, since the non-wet region is unlikely to be generated in the filter unit 30, it is possible to suppress the continuous generation of the above-mentioned dust.

The solubility of carbon dioxide gas in the treatment liquid is shown by, for example, the graph of FIG. 13A and 13B are diagrams showing the amount of gas dissolved in water for each temperature of water. FIG. 13A is a diagram in which the gas is carbon dioxide, FIG. 13B is a case where the gas is oxygen, and FIG. 13C is a diagram in which the gas is nitrogen. Is shown. The horizontal axis shows the temperature of water, and the vertical axis shows the solubility. From the graph, it can be confirmed that carbon dioxide gas is much more soluble in the treatment liquid than oxygen and nitrogen, which are the main components of air.

The liquid treatment unit U1 includes a degassing unit 60 for degassing the treatment liquid as a dissolution promoting unit for performing a treatment for increasing the solubility of carbon dioxide gas in the treatment liquid. As a result, the gas that is easily dissolved in the treatment liquid can be more easily dissolved in the treatment liquid, and the presence of air bubbles in the filter unit can be more preferably suppressed.

The liquid processing unit U1 includes a controller 100 configured to control the switching valve V14 so as to switch to the first state after the second state. As a result, after filling the filter unit 30 with easily soluble carbon dioxide gas in the second state, the treatment liquid can be supplied to the filter unit 30 in the first state. This makes it possible to preferably suppress the presence of air bubbles in the filter unit 30.

The liquid treatment unit U1 includes a pressurizing device 22 as a flow rate adjusting unit for adjusting the flow rate of the treatment liquid flowing through the treatment liquid path 70 in the first state, and the controller 100 is in the process of filling the filter unit 30 with the treatment liquid. The pressurizing device 22 is further controlled so that the filling speed of the processing liquid is gradually increased. When the filling is performed at a high flow rate from the beginning, the processing liquid may flow only to a place where the treatment liquid can easily pass, and the entire filter unit 30 may not be wet. In this respect, by gradually increasing the flow velocity, the filter unit 30 can be wetted in order from the lower part, and the treatment liquid can be filled while ensuring sufficient wettability.

The switching valve V14 can switch to a third state in which the processing liquid is not supplied from the processing liquid supply source 20 and carbon dioxide gas is not supplied from the gas supply source 50, and the controller 100 has the processing liquid in the filter unit 30. The first state is continued until filling, and the switching valve V14 is further controlled so as to switch from the first state to the third state after filling. As a result, after filling the filter unit 30, both the treatment liquid and the carbon dioxide gas are not supplied (leaved) to the filter unit 30. Since the bubbles of carbon dioxide gas can be expected to dissolve in the treatment liquid with the passage of time, by leaving the cells after filling, the consumption of the treatment liquid is suppressed and the presence of bubbles in the filter unit 30 is suppressed. Can be done.

The controller 100 is configured to further control the pressurizing device 22 so that the flow rate of the processing liquid after the treatment liquid is filled in the filter unit 30 is smaller than that before the filling. By continuing to flow a small amount of the treatment liquid even after filling, the treatment liquid continues to flow in the filter unit 30, and the permeation of the treatment liquid into the filter unit 30 is promoted by the capillary phenomenon. Thereby, dissolution of bubbles can be promoted. Further, by continuing to flow a small amount of the treatment liquid, a new treatment liquid before the gas is dissolved can flow into the filter unit 30, and the solubility of the treatment liquid can be ensured.

The treatment liquid path 70 includes a first path 71 for introducing the treatment liquid into the filter unit 30, a second path 72 for discharging the treatment liquid from the filter unit 30, and a treatment liquid from the filter unit 30 to the nozzle 93 for supplying the treatment liquid. The controller has a third path 73, a valve V18 provided in the second path 72, and a valve V19 provided in the third path 73, and the controller opens the valve V18 in the second state. At the same time, the valve V19 is closed to supply carbon dioxide gas from the first path 71 to the second path 72, and the valve V18 is closed and the valve V19 is opened to supply carbon dioxide gas from the first path 71 to the third path 73. In the first state, the valve V18 is opened and the valve V19 is closed to supply the processing liquid from the first path 71 to the second path 72, and the valve V18 is closed and the valve V19 is executed. Is opened to supply the treatment liquid from the first path 71 to the third path 73, and the operation is switched. As a result, the carbon dioxide gas and the treatment liquid can be supplied to both the drain side path and the nozzle side path in the filter unit 30. That is, it is possible to prevent the presence of air bubbles evenly in the filter unit 30.

The liquid treatment unit U1 is provided in the second path 72 and is provided in the first densitometer CS1 for measuring the concentration of carbon dioxide gas, and the liquid treatment unit U1 is provided in the third path 73 and is provided in the second densitometer CS2 for measuring the concentration of carbon dioxide gas. And, the controller 100 further executes a determination as to whether or not to switch from the second state to the first state according to the values of the first densitometer CS1 and the second densitometer CS2 in the second state. The switching valve V14 is controlled so as to switch from the second state to the first state when it is determined that the switching is performed. This makes it possible to switch from the second state to the first state after confirming that the filter unit 30 is sufficiently filled with carbon dioxide gas. This makes it possible to more preferably suppress the presence of air bubbles in the filter unit 30.

Although the embodiments have been described above, the present invention is not limited to the above embodiments. For example, although the degassing section 60 has been described as providing the degassing section 60 as the dissolution promoting section for performing the treatment for increasing the solubility of carbon dioxide gas, a cooling section for cooling the treatment solution may be used instead of the degassing section 60. .. As shown in FIG. 13A, the solubility of a gas such as carbon dioxide gas increases as the treatment liquid is cooled. Therefore, it is possible to promote the dissolution of carbon dioxide gas by cooling the treatment liquid as well. it can.

An example of a configuration for cooling the treatment liquid will be described with reference to FIG. As a configuration for cooling the treatment liquid, for example, the cooling bath 400 (cooling unit) shown in FIG. 15A may be used. In the cooling bus 400, the filter unit and the piping on the input side to the filter unit are put into the cooling bus, and the cooled liquid is sent from the pump 401 to be circulated to cool the processing liquid. Alternatively, the cooling tank 500 (cooling unit) shown in FIG. 15 (b) may be used. In the cooling tank 500, for example, a zigzag flow path having a "2" shape is provided on each surface in contact with the pipe, and the cooling medium flows through the flow path. By forming the flow path in the shape of "2", the flow path can be created by one part, and the area through which the cooling medium flows can be widened (longened) on each surface. The flow path can be formed into a long shape by connecting and fixing a plurality of blocks while sealing them with an O-ring or the like. Alternatively, the cooling cover 600 (cooling unit) shown in FIG. 15 (c) may be used. The cooling cover 600 is provided, for example, in the piping on the input side to the filter unit. In the cooling cover 600, water 601 and ammonium nitrate 602 chemically react with each other to cause an endothermic reaction, which cools the treatment liquid in the pipe. The layer of water 601 and the layer of ammonium nitrate 602 are usually separated and immiscible, and when the endothermic reaction is caused, the needle-shaped member 603 is penetrated through these layers. , The reaction between water 601 and ammonium nitrate 602 begins.

Further, it has been explained that the timing of switching from the second state to the first state is determined according to the measured values of the first densitometer CS1 and the second densitometer CS2, but the present invention is not limited to this, and the simulation result in advance is used. Therefore, the switching timing may be determined by calculating the time during which the replacement with carbon dioxide gas can be sufficiently performed.

Further, although it has been described that one switching valve V14 is used as an example of the switching unit, the switching unit is not limited to this, and the switching unit can switch between the processing liquid line connected to the processing liquid supply source and the gas line connected to the gas supply source. However, for example, it may be a combination of valves provided in each of the above two lines. When a pump is provided in the processing liquid line 711, the processing liquid flow rate adjustment in the developing process and the wetting process may be performed by controlling the pump by the flow rate control unit 103.

2 ... Coating / developing device (substrate processing device), 22 ... Pressurizing device (flow control unit), 30 ... Filter unit, 60 ... Degassing part (dissolution promoting part), 70 ... Processing liquid path, 71 ... First path , 72 ... 2nd path, 73 ... 3rd path, 93 ... nozzle, 100 ... controller, 400 ... cooling bath (cooling section, melting promotion section), 500 ... cooling tank (cooling section, melting promoting section), 600 ... cooling Cover (cooling part, dissolution promotion part), CS1 ... 1st densitometer, CS2 ... 2nd densitometer, V14 ... switching valve (switching part), V18 ... valve (1st valve), V19 ... valve (2nd valve) ..

Claims (10)

The treatment liquid route, which is the treatment liquid route used for liquid treatment,
A filter unit provided in the treatment liquid path to remove foreign substances in the treatment liquid, and
A first state in which the treatment liquid is supplied to the filter unit via the treatment liquid path, and a second state in which a gas more soluble in the treatment liquid than air is supplied to the filter unit via the treatment liquid path. A board processing device including a switching unit for switching between. The substrate processing apparatus according to claim 1, further comprising a dissolution promoting unit that performs a treatment for increasing the solubility of the gas with respect to the treatment liquid. The substrate processing apparatus according to claim 2, wherein the dissolution promoting unit is a degassing unit that degass the treatment liquid or a cooling unit that cools the treatment liquid. The substrate processing apparatus according to any one of claims 1 to 3, further comprising a control unit configured to control the switching unit so as to switch to the first state after the second state. Further, a flow rate adjusting unit for adjusting the flow rate of the processing liquid flowing through the treatment liquid path in the first state is provided.
The control unit
The claim is configured to further control the flow rate adjusting unit so that the filling speed of the treatment liquid gradually increases in the process of filling the filter unit with the treatment liquid. 4. The substrate processing apparatus according to 4. The control unit
5. The fifth aspect of the present invention is configured to further control the flow rate adjusting unit so that the flow rate of the treatment liquid after the treatment liquid is filled in the filter unit is smaller than that before the filling. The substrate processing apparatus described. The treatment liquid paths include a first path for introducing the treatment liquid into the filter unit, a second path for discharging the treatment liquid from the filter unit, and the treatment liquid from the filter unit to a nozzle for supplying the treatment liquid. Has a third path, which leads to
A first valve provided in the second path and a second valve provided in the third path are further provided.
The control unit
In the second state, the first valve is opened and the second valve is closed to supply the gas from the first path to the second path, and the first valve is closed and the second valve is opened. Opening and supplying the gas from the first path to the third path is switched and executed.
In the first state, the first valve is opened and the second valve is closed to supply the treatment liquid from the first path to the second path, and the first valve is closed and the second valve is closed. The substrate processing apparatus according to any one of claims 4 to 6, which is configured to switch between opening and supplying the processing liquid from the first path to the third path. A first densitometer provided in the second path for measuring the concentration of the gas and a second densitometer provided in the third path for measuring the concentration of the gas are further provided.
The control unit
It is configured to further execute determining whether or not to switch from the second state to the first state according to the values of the first densitometer and the second densitometer in the second state. Ori,
The substrate processing apparatus according to claim 7, wherein the switching unit is controlled so as to switch from the second state to the first state when it is determined to switch. A step of supplying a gas that is more soluble in the treatment liquid than air to a filter provided in the treatment liquid path, which is a route of the treatment liquid used for the liquid treatment.
A substrate processing method including a step of supplying the treatment liquid to a filter provided in the treatment liquid path after the step of supplying the gas. The treatment liquid is a liquid containing water as a main component.
The substrate processing method according to claim 9, wherein the gas is a gas containing at least one of carbon dioxide, chlorine, ammonia, and nitrogen sulfide.

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