JP6876320B2 - Method for producing higher-order acene derivatives - Google Patents
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Description
本発明は、高次アセン誘導体及びその製造方法に関する。 The present invention relates to higher acene derivatives and methods for producing them.
ムーアの法則に従い達成されてきた微細化に基づく電子デバイスの高性能化は、その物理的限界から今後10年以内に終焉を迎えると言われている。したがって、既存のシリコン材料が示す限界を打ち破る、革新的な新材料の創発が望まれている。中でも、グラフェンナノリボン(GNR)は既存のシリコン半導体を上回る優れた物性を示すことから注目を集めている。 It is said that the high performance of electronic devices based on miniaturization, which has been achieved according to Moore's Law, will end within the next 10 years due to its physical limitations. Therefore, it is desired to emerge an innovative new material that breaks the limits of existing silicon materials. Among them, graphene nanoribbon (GNR) is attracting attention because it exhibits superior physical properties to existing silicon semiconductors.
GNRの作製方法としては、ネガ型レジスト(ハイドロシルセスキオキサン)を用いて電子線リソグラフィにより形成する方法(非特許文献1等)、カーボンナノチューブを化学的に切開する方法(例えば、特許文献1)、有機溶媒に溶解したグラファイトフレークからソノケミカル法により形成する方法(非特許文献2等)などが報告されている。 Examples of the method for producing GNR include a method of forming by electron beam lithography using a negative resist (hydrosilsesquioxane) (Non-Patent Document 1 and the like), and a method of chemically incising carbon nanotubes (for example, Patent Document 1). ), A method of forming graphite flakes dissolved in an organic solvent by a sonochemical method (Non-Patent Document 2 and the like) and the like have been reported.
最近では、アントラセンダイマーを合成し、それらを原子レベルで平坦な(111)結晶面を有する金(Au)又は銀(Ag)の金属基板上に超高真空下で蒸着し、基板加熱によるラジカル反応により連結/縮環して、ボトムアップ的にGNRを形成する方法(非特許文献3等。以下、この方法を昇華法と呼ぶ。)が開示されている。 Recently, anthracene dimers have been synthesized and deposited on a gold (Au) or silver (Ag) metal substrate having a flat (111) crystal plane at the atomic level under ultra-high vacuum, and a radical reaction by heating the substrate. (Non-Patent Document 3, etc., hereinafter, this method is referred to as a sublimation method) is disclosed.
GNRは、そのエッジ(側縁)の構造によりアームチェア型とジグザグ型に大別されるが、前者は半導体性の、後者は金属性の性質を有することが知られている。従って、トランジスタ等の半導体材料としてはアームチェア型のGNRの使用が予想される。半導体材料として使用する場合、適度な大きさのエネルギーバンドギャップを持つ必要があるが、アームチェア型のGNRではGNRの幅(リボン幅)が大きくなるほどバンドギャップの大きさが小さくなることが知られている(特許文献2等)。アントラセンダイマーを前駆体とする昇華法(非特許文献3、非特許文献4等)では、リボン幅の揃ったGNRを作製することができる反面、リボン幅が1 nm以上のGNRを作製することができないため、半導体材料としての十分なバンドギャップの大きさを得ることができない。現状では、幅の広いGNRを作製するためには、それぞれ分子構造が異なる前駆体を使用しなければならず(非特許文献5)、前駆体毎に分子設計を練り直す必要がある。
一方、オリゴフェニレン等を前駆体とする昇華法も報告されている(非特許文献6)が、半導体デバイスとして安定した品質を得るほどにきれいな(すなわち、リボン幅が一義的に決まる、リボン幅の揃った)GNRを得ることができないという問題がある。
GNR is roughly classified into an armchair type and a zigzag type according to the structure of its edge (side edge), and it is known that the former has a semiconductor property and the latter has a metallic property. Therefore, it is expected that an armchair type GNR will be used as a semiconductor material such as a transistor. When used as a semiconductor material, it is necessary to have an energy bandgap of an appropriate size, but it is known that in an armchair type GNR, the size of the bandgap decreases as the width of the GNR (ribbon width) increases. (Patent Document 2 etc.). In the sublimation method using anthracene dimer as a precursor (Non-Patent Document 3, Non-Patent Document 4, etc.), a GNR having a uniform ribbon width can be produced, but a GNR having a ribbon width of 1 nm or more can be produced. Therefore, it is not possible to obtain a sufficient bandgap size as a semiconductor material. At present, in order to produce a wide GNR, it is necessary to use precursors having different molecular structures (Non-Patent Document 5), and it is necessary to rethink the molecular design for each precursor.
On the other hand, a sublimation method using oligophenylene or the like as a precursor has also been reported (Non-Patent Document 6), but the ribbon width is clean enough to obtain stable quality as a semiconductor device (that is, the ribbon width is uniquely determined). There is a problem that it is not possible to obtain a complete GNR.
本発明の目的は、リボン幅が一義的に決まる、リボン幅の揃ったGNRを容易に作製することであり、そのようなGNRの材料化合物となり得る化合物を提供することである。 An object of the present invention is to easily produce a GNR having a uniform ribbon width in which the ribbon width is uniquely determined, and to provide a compound which can be a material compound of such a GNR.
本発明者は、有機溶媒中で高次アセン同士を正しく横並びさせることができれば、リボン幅が一義的に決まる、リボン幅の揃ったGNRを容易に作製することができると考え、既知の高次アセン誘導体の中から、そのような性質を有する高次アセン誘導体の探索を行った結果、奇数個のベンゼン環が直線状に縮合した高次アセン誘導体が上記GNRの材料化合物として有用であることを見出し、本発明を完成させた。 The present inventor considers that if higher-order acenes can be correctly arranged side by side in an organic solvent, it is possible to easily produce a GNR having a uniform ribbon width in which the ribbon width is uniquely determined. As a result of searching for a higher-order acene derivative having such properties from among the acene derivatives, it was found that the higher-order acene derivative in which an odd number of benzene rings are linearly condensed is useful as a material compound for the above GNR. Find out and complete the present invention.
すなわち、本発明は、3個以上の奇数個のベンゼン環が直線状に縮合した高次アセンの中央の1個のベンゼン環である中央ベンゼン環の該ベンゼン環における1位と4位がそれぞれハロゲン(フッ素基、塩素基、ブロモ基、ヨウ素基)で置換されており、
前記中央ベンゼン環を挟んで両側の対称な位置にある各1個のベンゼン環の該ベンゼン環における1位と4位の間にジケトンがそれぞれ架橋している高次アセン誘導体である。
That is, in the present invention, the 1st and 4th positions of the central benzene ring, which is one benzene ring in the center of the higher-order acene in which three or more odd benzene rings are linearly condensed, are halogens, respectively. Substituted with (fluorine group, chlorine group, bromo group, iodine group),
It is a higher-order acene derivative in which a diketone is crosslinked between the 1-position and the 4-position of each one benzene ring located symmetrically on both sides of the central benzene ring.
上記高次アセン誘導体において、ハロゲンで置換された位置である1位と4位は中央ベンゼン環における位置をいい、高次アセンの全体における位置を示すものではない。つまり、高次アセンがアントラセンの場合は、中央ベンゼン環の1位と4位は、アントラセンの5位と10位を意味する。ジケトンが架橋している位置である1位と4位についても同様である。 In the above-mentioned higher-order acene derivative, the 1st and 4th positions substituted with halogen refer to the positions in the central benzene ring and do not indicate the positions in the whole higher-order acene. That is, when the higher-order acene is anthracene, the 1st and 4th positions of the central benzene ring mean the 5th and 10th positions of anthracene. The same applies to the 1st and 4th positions where the diketone is crosslinked.
或る広い幅のGNRを得るには、同じ幅の高次アセンを前駆体として昇華法により作製することが考えられるが、高次アセンは一般的には有機溶媒への溶解性が低く、また、不安定であるため、取り扱いが容易ではない。 In order to obtain a certain wide GNR, it is conceivable to prepare a higher-order acene having the same width as a precursor by a sublimation method, but the higher-order acene generally has low solubility in an organic solvent and is also low in solubility. , It is not easy to handle because it is unstable.
これに対して本発明に係る高次アセン誘導体は、高次アセンを構成する1個のベンゼン環(中央ベンゼン環)に2個のハロゲンを付加するとともに、該中央ベンゼン環を挟んで両側の対称な位置にあるベンゼン環のそれぞれにジケトンを架橋させた高次アセン誘導体から成るため、高次アセン誘導体であっても有機溶媒に可溶である。また、光を照射することにより容易に高次アセンに変換される。これらにより、昇華法によりGNRを作製する際に取り扱いが容易となり、リボン幅が一義的に決まるGNRを作製することが可能となる。特に、本発明に係る高次アセン誘導体は、ヘプタセン以上の高次アセンでも有機溶媒に可溶であるため、幅の広い(ベンゼン環7個以上の幅の)GNRを容易に作製することができる。また、様々な幅のGNRを作製するための高次アセン誘導体を、統一した方法で作製することができるようになる。 On the other hand, the higher-order acene derivative according to the present invention adds two halogens to one benzene ring (central benzene ring) constituting the higher-order acene, and is symmetrical on both sides of the central benzene ring. Since it is composed of a higher-order acene derivative in which a diketone is crosslinked to each of the benzene rings at various positions, even the higher-order acene derivative is soluble in an organic solvent. In addition, it is easily converted into higher-order acene by irradiating it with light. As a result, it becomes easy to handle when producing GNR by the sublimation method, and it becomes possible to produce GNR in which the ribbon width is uniquely determined. In particular, since the higher-order acene derivative according to the present invention is soluble in organic solvents even in higher-order acenes of heptacene or higher, a wide GNR (width of 7 or more benzene rings) can be easily prepared. .. In addition, higher-order acene derivatives for producing GNRs of various widths can be produced by a unified method.
本発明に係る高次アセン誘導体からは、様々な工程によりGNRを得ることができるが、例えばベンゼン環の数が7個の高次アセン(ヘプタセン)誘導体の場合は、図1に示す工程によってGNRが得られる。すなわち、
a) Au(111)基板上に高次アセン誘導体を蒸着し、脱臭素化して高分子鎖を生成し(図1(a))、
b) 波長450nm(450±20nm)の光を照射して前記高分子鎖からジケトンを除去し(図1(b))、
c) 温度400℃(400±20℃)で加熱して脱水素化する(図1(c))。
GNR can be obtained from the higher-order acene derivative according to the present invention by various steps. For example, in the case of a higher-order acene (heptacene) derivative having 7 benzene rings, the GNR is obtained by the step shown in FIG. Is obtained. That is,
a) A higher-order acene derivative is deposited on an Au (111) substrate and debromineed to form a polymer chain (Fig. 1 (a)).
b) Irradiate with light having a wavelength of 450 nm (450 ± 20 nm) to remove the diketone from the polymer chain (Fig. 1 (b)).
c) Dehydrogenate by heating at a temperature of 400 ° C (400 ± 20 ° C) (Fig. 1 (c)).
本発明に係る高次アセン誘導体は、中央ベンゼン環に2個のハロゲンが結合しており、且つ、該中央ベンゼン環の両側の対称な位置にある2個のベンゼン環にそれぞれジケトンが架橋しているため、高次アセン誘導体が正しく横並びして揃った高分子鎖を得ることができる。そして、このような高分子鎖を作製した後は光を照射するだけで容易にジケトンを除去することができるため、その後の脱水素化によりリボン幅が一義的に決まるGNRを作ることができる。 In the higher-order acene derivative according to the present invention, two halogens are bonded to the central benzene ring, and diketones are crosslinked to the two benzene rings at symmetrical positions on both sides of the central benzene ring. Therefore, it is possible to obtain a polymer chain in which higher-order acene derivatives are correctly arranged side by side. Then, after producing such a polymer chain, the diketone can be easily removed only by irradiating with light, so that a GNR in which the ribbon width is uniquely determined by the subsequent dehydrogenation can be produced.
上記の本発明に係る高次アセン誘導体を製造する方法としては、次のような方法が可能である。
a) 中央環にキノンを有する高次アセン誘導体に、ディールス・アルダー反応によりアセチレンジカルボン酸ジメチル(DMAD)を架橋付加する。
b) 脱炭酸反応により架橋部のエステル基を除去する。
c) 還元反応によりキノンの酸素を除去し、同位にハロゲンを付加する。
d) 酸化反応により架橋部に酸素を付加し、ジケトンを形成する。
As a method for producing the higher-order acene derivative according to the present invention, the following method is possible.
a) Dimethyl acetylenedicarboxylate (DMAD) is crosslinked and added to a higher-order acene derivative having a quinone in the central ring by the Diels-Alder reaction.
b) Remove the ester group at the crosslinked part by decarboxylation reaction.
c) Oxygen of quinone is removed by reduction reaction, and halogen is added to the isotope.
d) Oxygen is added to the crosslinked portion by an oxidation reaction to form a diketone.
具体的には、高次アセンがヘプタセンであり、ハロゲンが臭素(ブロモ基)である場合、本発明に係る高次アセン誘導体の一つの態様は、[7,16-ジブロモ-5,9,14,18-テトラヒドロ-5,18:9,14-ビスエタノヘプタセン-19,20,21,22-テトラケトン]となる。この高次アセン誘導体の構造を以下の式(1)に示す。
また、上記高次アセン誘導体の製造方法は、例えば次のようなものとなる。
a) 7,16-ヘプタセンキノンに、ディールス・アルダー反応によりアセチレンジカルボン酸ジメチル(DMAD)を架橋付加する。
b) 脱炭酸反応により架橋部のエステル基を除去する。
c) 還元反応によりキノンの酸素を除去し、同位にブロモ基を付加する。
d) 酸化反応により架橋部に酸素を付加し、7,16-ジブロモ-5,9,14,18-テトラヒドロ-5,18:9,14-ビスエタノヘプタセン-19,20,21,22-テトラケトンを形成する。
Further, the method for producing the higher-order acene derivative is as follows, for example.
a) Dimethyl acetylenedicarboxylate (DMAD) is crosslinked and added to 7,16-heptasenquinone by the Diels-Alder reaction.
b) Remove the ester group at the crosslinked part by decarboxylation reaction.
c) The oxygen of the quinone is removed by the reduction reaction, and a bromo group is added to the isotope.
d) Oxygen was added to the crosslinked part by the oxidation reaction, and 7,16-dibromo-5,9,14,18-tetrahydro-5,18: 9,14-bisethanoheptacene-19,20,21,22- Form tetraketone.
本発明に係る高次アセン誘導体は基本的に有機溶媒に可溶であり、とくに、ヘプタセン以上の高次アセンの誘導体であっても有機溶媒に可溶である。また、光を照射することにより容易に高次アセンに変換される。これらにより、昇華法によりグラフェンナノリボン(GNR)を作製する際に取り扱いが容易となり、幅の広い(ベンゼン環7個以上の幅の)、リボン幅が一義的に決まる、リボン幅の揃ったきれいなGNRを作製することが可能となる。また、様々な幅のGNRの作製に利用可能な、高次アセン誘導体を、統一した方法で作製することができるようになる。 The higher-order acene derivative according to the present invention is basically soluble in an organic solvent, and in particular, even a derivative of a higher-order acene higher than heptacene is soluble in an organic solvent. In addition, it is easily converted into higher-order acene by irradiating it with light. These make it easy to handle when making graphene nanoribbons (GNR) by the sublimation method, and the wide (width of 7 or more benzene rings), the ribbon width is uniquely determined, and the ribbon width is uniform and clean. Can be produced. In addition, higher-order acene derivatives that can be used to produce GNRs of various widths can be produced by a unified method.
以下、本発明に係る高次アセン誘導体及びその製造方法の具体的な実施例について、図面を参照しつつ詳細に説明する。なお、以下に示す実施例において合成に用いた試薬および溶媒は、市販品をそのまま使用するか、乾燥剤存在下で蒸留精製したものを使用した。NMRはJEOL社製 JNM-ECX400P、JNM-ECX500およびJNM-ECA600を用いて測定し、テトラメチルシラン(TMS)を内部標準として使用した。 Hereinafter, specific examples of the higher-order acene derivative and the method for producing the same according to the present invention will be described in detail with reference to the drawings. As the reagents and solvents used for the synthesis in the examples shown below, commercially available products were used as they were, or those purified by distillation in the presence of a desiccant were used. NMR was measured using JNM-ECX400P, JNM-ECX500 and JNM-ECA600 manufactured by JEOL Ltd., and tetramethylsilane (TMS) was used as an internal standard.
この実施例は、図2の記号1で表される高次アセン誘導体を作製したものである。 In this example, a higher-order acene derivative represented by the symbol 1 in FIG. 2 was produced.
[化合物3の生成=プロセス(i)]
7,16-ヘプタセンキノン(1.0 g, 2.45 mmol)とアセチレンジカルボン酸ジメチル(8.4 ml)をキシレン(240 ml)中に懸濁させ、オートクレーブにて170℃で3日間加熱攪拌した。反応終了後、反応溶媒を減圧留去し、得られた残渣をシリカカラムクロマトグフラフィー(酢酸エチル:ヘキサン=1:1, Rf=0.43)により精製し、さらにメタノールを用いた再結晶を行うことで、目的物を収率 43%(730 mg, 1.05 mmol)で単離した。
目的物について1H 核磁気共鳴スペクトル法(1H NMR)によって構造解析を行った結果を以下に示す。
1H NMR (CDCl3, 400 MHz): δ 8.23 (s, 4 H), 7.45-7.42 (m, 4 H), 7.10-7.06 (m, 4 H), 5.68 (s, 4 H), 3.81 (s, 12 H) ppm.
この結果から、目的物は図2の記号3で表される化合物(5,7,9,14,16,18-ヘキサヒドロ-19,20,21,22-テトラカルボキシメチル-5,18:9,14-ビスエテノヘプタセン-7,16-ジオン)であることが確認された。
[Formation of compound 3 = process (i)]
7,16-Heptasenquinone (1.0 g, 2.45 mmol) and dimethyl acetylenedicarboxylate (8.4 ml) were suspended in xylene (240 ml), and the mixture was heated and stirred in an autoclave at 170 ° C. for 3 days. After completion of the reaction, the reaction solvent was distilled off under reduced pressure, the obtained residue was purified by silica column chromatography fluffy (ethyl acetate: hexane = 1: 1, Rf = 0.43), and further recrystallized using methanol. , The desired product was isolated in a yield of 43% (730 mg, 1.05 mmol).
The results of structural analysis of the target product by 1 H nuclear magnetic resonance spectroscopy ( 1 H NMR) are shown below.
1 1 H NMR (CDCl 3 , 400 MHz): δ 8.23 (s, 4 H), 7.45-7.42 (m, 4 H), 7.10-7.06 (m, 4 H), 5.68 (s, 4 H), 3.81 ( s, 12 H) ppm.
From this result, the target compound is the compound represented by the symbol 3 in FIG. 2 (5,7,9,14,16,18-hexahydro-19,20,21,22-tetracarboxymethyl-5,18: 9, It was confirmed to be 14-bisethenoheptasen-7,16-dione).
[化合物5の生成=プロセス(ii), (iii)]
氷浴下で、化合物3(730 mg, 1.05 mmol)のメタノール(15 ml)懸濁液に、10%水酸化ナトリウム水溶液(10 ml)を滴下した。その後、反応溶液を60℃で6時間加熱攪拌した。反応終了後、氷浴下で、6 Mの塩酸を反応溶液が酸性になるまで加えた。さらに酢酸エチルを加え、分液操作により得られた有機層を飽和食塩水で洗浄し、硫酸ナトリウムで乾燥後、溶媒を減圧留去した。得られた残渣を酢酸エチルとヘキサンを用いた再沈殿を行うことで、化合物4を粗収量668 mg得た。
[Formation of compound 5 = process (ii), (iii)]
Under an ice bath, a 10% aqueous sodium hydroxide solution (10 ml) was added dropwise to a suspension of compound 3 (730 mg, 1.05 mmol) in methanol (15 ml). Then, the reaction solution was heated and stirred at 60 ° C. for 6 hours. After completion of the reaction, 6 M hydrochloric acid was added under an ice bath until the reaction solution became acidic. Further, ethyl acetate was added, and the organic layer obtained by the liquid separation operation was washed with saturated brine, dried over sodium sulfate, and the solvent was evaporated under reduced pressure. The obtained residue was reprecipitated with ethyl acetate and hexane to give compound 4 in a crude yield of 668 mg.
得られた化合物4(700 mg)と銅粉末(140 mg)をキノリン(12 ml)に懸濁させ、マイクロウェーブ反応装置で240℃、90分間加熱攪拌した。反応終了後、塩化メチレンを用いて反応溶液を薄め、ショートカラムクロマトグラフィー(塩化メチレン)にて銅粉末を除去した。次に、この塩化メチレン溶液を3 MのHCl水溶液と飽和食塩水で洗浄した。有機層を硫酸ナトリウムで乾燥し、溶媒を減圧留去した。得られた残渣をシリカカラムクロマトグフラフィー(塩化メチレン:ヘキサン=2:1, Rf = 0.33)により精製し、さらに塩化メチレンとメタノールを用いた再沈殿を行うことで、目的物を収率 54%(275 mg, 0.60 mmol)で単離した。 The obtained compound 4 (700 mg) and copper powder (140 mg) were suspended in quinoline (12 ml), and the mixture was heated and stirred at 240 ° C. for 90 minutes with a microwave reactor. After completion of the reaction, the reaction solution was diluted with methylene chloride, and copper powder was removed by short column chromatography (methylene chloride). Next, this methylene chloride solution was washed with 3 M aqueous HCl solution and saturated brine. The organic layer was dried over sodium sulfate, and the solvent was evaporated under reduced pressure. The obtained residue was purified by silica column chromatography fluffy (methylene chloride: hexane = 2: 1, Rf = 0.33), and reprecipitation was performed using methylene chloride and methanol to obtain the desired product in a yield of 54% (Methylene chloride: hexane = 2: 1, Rf = 0.33). 275 mg, 0.60 mmol) was isolated.
目的物について1H 核磁気共鳴スペクトル法によって構造解析を行った結果を以下に示す。
1H NMR(CDCl3, 400 MHz): δ 8.10(s, 4H), 7.35-7.31(m, 4 H), 7.05-6.98(m, 8 H), 5.36-5.33(m, 4 H)ppm.
以上の結果から、目的物は図2の記号5で表される化合物(5,7,9,14,16,18-ヘキサヒドロ-5,18:9,14-ビスエテノヘプタセン-7,16-ジオン)であることが確認された。
The desired product shows the result of structural analysis by 1 H nuclear magnetic resonance spectroscopy as follows.
1 1 H NMR (CDCl 3 , 400 MHz): δ 8.10 (s, 4H), 7.35-7.31 (m, 4 H), 7.05-6.98 (m, 8 H), 5.36-5.33 (m, 4 H) ppm.
From the above results, the target compound is the compound represented by symbol 5 in FIG. 2 (5,7,9,14,16,18-hexahydro-5,18: 9,14-bisethenoheptacene-7,16- Zeon) was confirmed.
[化合物6の生成=プロセス(iv)]
アルゴン雰囲気下でシクロヘキサノール(14 ml)にアルミニウム粉末(729 mg, 27 mmol)、塩化水銀(II)(15 mg, 0.06 mmol)と四臭化炭素(96 mg, 0.29 mmol)を加え、160 ℃で5時間加熱攪拌した。その後室温に戻し、化合物5(560 mg, 1.22 mmol)を加えた。再度160℃で7時間加熱した後、室温に戻し、反応溶液を塩化メチレンで薄めた。反応溶液に水を加えた後、有機層を水と飽和食塩水で洗い、硫酸ナトリウムで乾燥後、減圧留去した。得られた残渣を塩化メチレンとメタノールを用いた再沈殿を行うことで、目的物を収率48% (251 mg, 0.58 mmol)で単離した。
目的物について1H 核磁気共鳴スペクトル法によって構造解析を行った結果を以下に示す。
1H NMR (CDCl3, 400 MHz): δ 8.04 (s, 2 H), 7.70 (s, 4 H), 7.35-7.32 (m, 8 H), 7.02-6.99 (m, 4 H), 5.20 (s, 4 H) ppm.
以上の結果から、目的物は図2に記号6で表される化合物(5,9,14,18-テトラヒドロ-5,18:9,14-ビスエテノヘプタセン)であることが確認された。
[Formation of compound 6 = process (iv)]
Aluminum powder (729 mg, 27 mmol), mercury (II) chloride (15 mg, 0.06 mmol) and carbon tetrabromide (96 mg, 0.29 mmol) were added to cyclohexanol (14 ml) under an argon atmosphere at 160 ° C. Was heated and stirred for 5 hours. Then, the temperature was returned to room temperature, and compound 5 (560 mg, 1.22 mmol) was added. After heating again at 160 ° C. for 7 hours, the temperature was returned to room temperature, and the reaction solution was diluted with methylene chloride. After adding water to the reaction solution, the organic layer was washed with water and saturated brine, dried over sodium sulfate, and evaporated under reduced pressure. The obtained residue was reprecipitated with methylene chloride and methanol to isolate the desired product in a yield of 48% (251 mg, 0.58 mmol).
The desired product shows the result of structural analysis by 1 H nuclear magnetic resonance spectroscopy as follows.
1 1 H NMR (CDCl 3 , 400 MHz): δ 8.04 (s, 2 H), 7.70 (s, 4 H), 7.35-7.32 (m, 8 H), 7.02-6.99 (m, 4 H), 5.20 ( s, 4 H) ppm.
From the above results, it was confirmed that the target product was the compound represented by the symbol 6 in FIG. 2 (5,9,14,18-tetrahydro-5,18: 9,14-bisethenoheptacene).
[化合物7の生成=プロセス(v)]
氷浴下でクロロホルム(180 ml)に化合物6(96 mg, 0.29 mmol)を懸濁させ、N-ブロモスクシンイミド(816 mg, 4.58 mmol)を5分間かけて加えた。10分間氷浴下で攪拌し、飽和亜硫酸水素ナトリウム水溶液を加え反応を停止した。有機層を水と飽和食塩水で洗った後、硫酸ナトリウムで乾燥した。溶媒を減圧留去した後、得られた残渣をシリカカラムクロマトグフラフィー(塩化メチレン:ヘキサン=1:2, Rf=0.48)により精製し、さらに塩化メチレンとメタノールを用いた再沈殿を行うことで、目的物を収率20% (243 mg, 0.41 mmol)で単離した。
[Formation of
Compound 6 (96 mg, 0.29 mmol) was suspended in chloroform (180 ml) under an ice bath, and N-bromosuccinimide (816 mg, 4.58 mmol) was added over 5 minutes. The mixture was stirred under an ice bath for 10 minutes, saturated aqueous sodium hydrogen sulfite solution was added, and the reaction was stopped. The organic layer was washed with water and saturated brine, and dried over sodium sulfate. After distilling off the solvent under reduced pressure, the obtained residue was purified by silica column chromatography fluffy (methylene chloride: hexane = 1: 2, Rf = 0.48), and further precipitated with methylene chloride and methanol. The desired product was isolated in a yield of 20% (243 mg, 0.41 mmol).
目的物について1H 核磁気共鳴スペクトル法によって構造解析を行った結果を以下に示す。
1H NMR (CDCl3, 400 MHz): δ 8.31 (s, 2 H), 7.39-7.36 (m, 4 H), 7.05-7.01 (m, 8 H), 5.31-5.32 (m, 4 H) ppm.
以上の結果から、目的物は図2に記号7で表される化合物(7,16-ジブロモ-5,9,14,18-テトラヒドロ-5,18:9,14-ビスエテノヘプタセン)であることが確認された。
The desired product shows the result of structural analysis by 1 H nuclear magnetic resonance spectroscopy as follows.
1 1 H NMR (CDCl 3 , 400 MHz): δ 8.31 (s, 2 H), 7.39-7.36 (m, 4 H), 7.05-7.01 (m, 8 H), 5.31-5.32 (m, 4 H) ppm ..
From the above results, the target compound is the compound represented by
[化合物8の生成=プロセス(vi)]
氷浴下でアセトン(200 ml)に化合物7(240 mg, 0.41 mmol)を懸濁させ、N-メチルモルホリン-N-オキシド(524 mg, 4.47mmol)とマイクロカプセル化酸化オスミウム(VIII)(23 mg)のアセトン溶液(100ml)を5分間かけて滴下した。15分間氷浴下で攪拌し、その後、室温で2日間反応させた。飽和亜ジチオン酸ナトリウム水溶液を加え反応を停止し、溶媒を減圧留去した後に、酢酸エチルを加えた。この酢酸エチル溶液を水と飽和食塩水で洗い、硫酸ナトリウムで乾燥した。溶媒を減圧留去した後、得られた残渣をシリカカラムクロマトグフラフィー(酢酸エチル:塩化メチレン=1:5)を行うことで、目的物を収率95% (258 mg, 0.39 mmol)で単離した。また、目的物のうち、トランス体は158 mg (Rf=0.50 and 0.38)、シス体は100 mg(Rf=0.25)であった。
[Formation of compound 8 = process (vi)]
Compound 7 (240 mg, 0.41 mmol) suspended in acetone (200 ml) under an ice bath with N-methylmorpholine-N-oxide (524 mg, 4.47 mmol) and microencapsulated osmium tetroxide (VIII) (23). An acetone solution (100 ml) of mg) was added dropwise over 5 minutes. The mixture was stirred under an ice bath for 15 minutes and then reacted at room temperature for 2 days. A saturated aqueous sodium dithionite solution was added to stop the reaction, the solvent was evaporated under reduced pressure, and then ethyl acetate was added. The ethyl acetate solution was washed with water and saturated brine, and dried over sodium sulfate. After distilling off the solvent under reduced pressure, the obtained residue was subjected to silica column chromatography fluffy (ethyl acetate: methylene chloride = 1: 5) to isolate the desired product in a yield of 95% (258 mg, 0.39 mmol). did. Of the target substances, the trans form was 158 mg (Rf = 0.50 and 0.38), and the cis form was 100 mg (Rf = 0.25).
トランス体及びシス体について、1H 核磁気共鳴スペクトル法による構造解析を行った結果を以下に示す。
トランス体
1H NMR (DMSO-d6, 500 MHz): δ 8.36 (s, 2 H), 7.46-7.45 (m, 4 H), 7.18-7.16 (m, 4 H), 4.87 (s, 4 H), 4.65 (s, 4 H), 3.99 (s, 4 H) ppm.
シス体
1H NMR (DMSO-d6, 500 MHz): δ 8.35 (s, 2 H), 7.45-7.43 (m, 4 H), 7.20-7.18 (m, 4 H), 4.90 (s, 4 H), 4.65 (s, 4 H), 4.00 (s, 4 H) ppm.
以上の結果から、目的物は、図2に記号8で表される化合物(7,16-ジブロモ-5,9,14,18-テトラヒドロ-19,20,21,22-テトラヒドロキシ-5,18:9,14-ビスエタノヘプタセン)であることが確認された。
For trans isomer and cis-isomer, shows the result of structural analysis by 1 H nuclear magnetic resonance spectroscopy as follows.
Transformer body
1 1 H NMR (DMSO-d6, 500 MHz): δ 8.36 (s, 2 H), 7.46-7.45 (m, 4 H), 7.18-7.16 (m, 4 H), 4.87 (s, 4 H), 4.65 (s, 4 H), 3.99 (s, 4 H) ppm.
Sis body
1 1 H NMR (DMSO-d6, 500 MHz): δ 8.35 (s, 2 H), 7.45-7.43 (m, 4 H), 7.20-7.18 (m, 4 H), 4.90 (s, 4 H), 4.65 (s, 4 H), 4.00 (s, 4 H) ppm.
From the above results, the target product is the compound represented by symbol 8 in FIG. 2 (7,16-dibromo-5,9,14,18-tetrahydro-19,20,21,22-tetrahydroxy-5,18. : 9,14-Bis etanoheptasen) was confirmed.
[化合物1=高次アセン誘導体の作製=プロセス(vii)]
アルゴン雰囲気下でジメチルスルホキシド(5 ml)と塩化メチレン(15 ml)の混合溶液に-78 ℃で無水トリフルオロ酢酸(1 ml)を10分間かけて滴下した。滴下終了から45分後、ジメチルスルホキシド(15 ml)と塩化メチレン(50 ml)の混合溶媒に溶かしたトランス体の化合物8(100 mg, 0.15 mmol)を40分間かけて滴下し、-78℃ で2時間攪拌した。その後、ジイソプロピルエチルアミンを5分間かけて滴下することで反応を停止させ、反応溶液を室温に戻した。この反応溶液に3 MのHCl水溶液に加え、塩化メチレンで抽出を行った。有機層を分離後、有機層を水と飽和食塩水で洗い、硫酸ナトリウムで乾燥した。溶媒を減圧留去後、得られた残渣をシリカカラムクロマトグフラフィー(酢酸エチル:塩化メチレン=1:5, Rf = 0.70)を行い、さらに塩化メチレンとヘプタンを用いた再沈殿を行うことで、目的物を収率73% (73 mg, 0.11 mmol)で単離した。
[Compound 1 = Preparation of higher-order acene derivative = Process (vii)]
Trifluoroacetic anhydride (1 ml) was added dropwise at −78 ° C. over 10 minutes to a mixed solution of dimethyl sulfoxide (5 ml) and methylene chloride (15 ml) under an argon atmosphere. 45 minutes after the completion of the dropwise addition, the trans compound compound 8 (100 mg, 0.15 mmol) dissolved in a mixed solvent of dimethyl sulfoxide (15 ml) and methylene chloride (50 ml) was added dropwise over 40 minutes at -78 ° C. Stirred for 2 hours. Then, the reaction was stopped by dropping diisopropylethylamine over 5 minutes, and the reaction solution was returned to room temperature. This reaction solution was added to a 3 M aqueous HCl solution and extracted with methylene chloride. After separating the organic layer, the organic layer was washed with water and saturated brine, and dried over sodium sulfate. After distilling off the solvent under reduced pressure, the obtained residue was subjected to silica column chromatography fluffy (ethyl acetate: methylene chloride = 1: 5, Rf = 0.70), and further precipitated with methylene chloride and heptane. The product was isolated in a yield of 73% (73 mg, 0.11 mmol).
目的物について核磁気共鳴スペクトル法による構造解析を行った結果を以下に示す。
1H NMR (CDCl3, 600 MHz): δ 8.67 (s, 2 H), 7.57-7.54 (m, 4 H), 7.45-7.43 (m, 4 H), 5.31(s, 4 H) ppm.
以上の結果から、目的物は、図2に記号1で表される化合物(7,16-ジブロモ-5,9,14,18-テトラヒドロ-5,18:9,14-ビスエタノヘプタセン-19,20,21,22-テトラケトン)であることが確認された。
The results of structural analysis of the target object by the nuclear magnetic resonance spectral method are shown below.
1 1 H NMR (CDCl 3 , 600 MHz): δ 8.67 (s, 2 H), 7.57-7.54 (m, 4 H), 7.45-7.43 (m, 4 H), 5.31 (s, 4 H) ppm.
From the above results, the target compound is the compound represented by symbol 1 in FIG. 2 (7,16-dibromo-5,9,14,18-tetrahydro-5,18: 9,14-bisethanoheptacene-19. , 20,21,22-tetraketone) was confirmed.
以上のように、出発物質である高次アセンに予めブロモ置換基を導入しておき、本発明に係る方法で合成を進めてゆくことにより、高次アセン誘導体を作製することができる。この高次アセン誘導体を用いることにより、中央ベンゼン環のブロモ置換基以外では連結が生じにくい、幅の揃ったGNRを容易に作製することができる。 As described above, a higher-order acene derivative can be produced by introducing a bromo substituent into the higher-order acene as a starting material in advance and proceeding with the synthesis by the method according to the present invention. By using this higher-order acene derivative, it is possible to easily prepare a GNR having a uniform width, in which linkage is unlikely to occur except for the bromo substituent of the central benzene ring.
なお、上記実施例では、高次アセン誘導体の中央ベンゼン環の1位と4位にブロモ基を導入したが、ブロモ基以外のハロゲン(周期表第17属元素)を導入しても良い。ハロゲンの中でも特にフッ素、塩素、ブロモ、ヨウ素はその化学的性質が非常に似ていることが知られていることから、ブロモ基に代えてフッ素基、塩素基、ヨウ素基のいずれかを導入した場合でも、上記実施例と同様の結果が得られるものと推測される。
また、上記実施例ではベンゼン環が7個直線状に並んだ高次アセン誘導体(ヘプタセン誘導体)の合成例を説明したが、ベンゼン環が3個又は5個、あるいは9個等、適宜の奇数個のベンゼン環が直線状に並んだ高次アセンの誘導体についても、上記実施例と同様の結果が得られるものと推測される。
さらに、本明細書では、本発明に係る高次アセン誘導体のGNRの材料化合物としての有用性について説明したが、これは、GNR以外の物質への利用可能性を否定するものではない。
In the above example, a bromo group was introduced at the 1st and 4th positions of the central benzene ring of the higher acene derivative, but a halogen other than the bromo group (element of the 17th group of the periodic table) may be introduced. Among halogens, fluorine, chlorine, bromo, and iodine are known to have very similar chemical properties. Therefore, any of fluorine group, chlorine group, and iodine group was introduced instead of the bromo group. Even in this case, it is presumed that the same result as in the above embodiment can be obtained.
Further, in the above embodiment, a synthesis example of a higher-order acene derivative (heptacene derivative) in which 7 benzene rings are linearly arranged has been described, but an appropriate odd number such as 3 or 5 or 9 benzene rings has been described. It is presumed that the same results as in the above-mentioned Examples can be obtained for the derivative of higher-order acene in which the benzene rings of benzene are arranged in a straight line.
Further, in the present specification, the usefulness of the higher-order acene derivative according to the present invention as a material compound of GNR has been described, but this does not deny the possibility of using it for substances other than GNR.
本発明は、3個以上の奇数個のベンゼン環が直線状に縮合した高次アセンの中央のベンゼン環の1位と4位がハロゲン(フッ素基、塩素基、ブロモ基、ヨウ素基)で置換され、且つ、前記中央ベンゼン環を挟んで両側の対称な位置にある各1個のベンゼン環における1位と4位の間にジケトンがそれぞれ架橋している新規な高次アセン誘導体を提供する。このような特徴的な構造により、本発明に係る高次アセン誘導体は、正しく横並びして揃った高分子鎖になり易く、グラフェンナノリボンの材料としての利用可能性を有する。 In the present invention, the 1st and 4th positions of the central benzene ring of higher-order acene in which three or more odd benzene rings are linearly condensed are replaced with halogens (fluorine group, chlorine group, bromo group, iodine group). Provided is a novel higher-order acene derivative in which a diketone is crosslinked between the 1-position and the 4-position of each one benzene ring located symmetrically on both sides of the central benzene ring. Due to such a characteristic structure, the higher-order acene derivative according to the present invention tends to form a polymer chain that is correctly arranged side by side and has a possibility of being used as a material for graphene nanoribbons.
Claims (1)
b) 脱炭酸反応により架橋部のエステル基を除去し、
c) 還元反応によりキノンの酸素を除去して同位にブロモ基を付加し、
d) 酸化反応により架橋部に酸素を付加し、7,16-ジブロモ-5,9,14,18-テトラヒドロ-5,18:9,14-ビスエタノヘプタセン-19,20,21,22-テトラケトンを形成する、
という工程を含み、酸化反応により架橋部に酸素を付加する工程が、該架橋部をヒドロキシル化処理し、さらに、酸化処理することである、高次アセン誘導体の製造方法。 a) Dimethyl acetylenedicarboxylate (DMAD) was crosslinked and added to 7,16-heptasenquinone by the Diels-Alder reaction.
b) Remove the ester group at the crosslinked part by decarboxylation reaction.
c) The oxygen of the quinone is removed by the reduction reaction and a bromo group is added to the isotope.
d) Oxygen was added to the crosslinked part by the oxidation reaction, and 7,16-dibromo-5,9,14,18-tetrahydro-5,18: 9,14-bisethanoheptacene-19,20,21,22- Forming tetraketone,
A method for producing a higher-order acene derivative, which comprises a step of adding oxygen to a crosslinked portion by an oxidation reaction, which comprises hydroxylating the crosslinked portion and further oxidizing the crosslinked portion.
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