JP6876540B2 - Adhesive sheet with integrated dicing tape - Google Patents

Description

The present invention relates to an adhesive sheet with an integrated dicing tape that can be used in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing tape-integrated adhesive sheet of a corresponding size is attached to a semiconductor wafer as a workpiece, and the semiconductor wafer is individualized to form a semiconductor with an adhesive film. Chips may be obtained. Examples of the dicing tape integrated adhesive sheet include a dicing tape integrated back surface protective film and a so-called dicing die bond film. The dicing tape integrated back surface protective film has a dicing tape having a laminated structure including a base material and an adhesive layer, and a back surface protective film that is in close contact with the adhesive layer, and has a size equivalent to that of a chip for protecting the back surface of a semiconductor chip. It is used to obtain a semiconductor chip with an adhesive film of. On the other hand, the dicing die bond film has a dicing tape having a laminated structure including a base material and an adhesive layer, and a dicing film that is in close contact with the adhesive layer, and is a semiconductor with an adhesive film for die bonding having a size equivalent to a chip. Used to obtain chips. Techniques related to these dicing tape-integrated adhesive sheets are described in, for example, Patent Documents 1 to 4 below.

Japanese Unexamined Patent Publication No. 2007-2173 Japanese Unexamined Patent Publication No. 2010-177401 Japanese Unexamined Patent Publication No. 2011-151360 Japanese Unexamined Patent Publication No. 2016-21244

As one of the methods for obtaining a semiconductor chip with an adhesive film for die bonding using a dicing die bond film, a method for expanding the dicing tape in the dicing die bond film and cutting the die bond film is known. In this method, first, a semiconductor wafer as a work is bonded onto a die bond film of a dicing die bond film. This semiconductor wafer is, for example, processed so that it can be later divided into a plurality of semiconductor chips together with the division of the die bond film. Next, the dicing tape of the dicing die bond film is expanded (for cutting) in order to cut the dicing film so that a plurality of adhesive film pieces, each of which is in close contact with the semiconductor chip, are generated from the dicing film on the dicing tape. Expanding process). In this expanding step, the semiconductor wafer on the die-bonded film is also split at the portion corresponding to the cut-off portion of the die-bonded film, and the semiconductor wafer is fragmented into a plurality of semiconductor chips on the dicing die-bonded film or the dicing tape. Next, for example, after undergoing a cleaning step, each semiconductor chip is pushed up from the lower side of the dicing tape by a pin member of the pick-up mechanism together with an adhesive film having a size equivalent to the chip in close contact with the chip, and then picked up from the dicing tape. To. In this way, a semiconductor chip with an adhesive film for a die bond film can be obtained. The semiconductor chip with an adhesive film is fixed to the mounting substrate by die bonding via the adhesive film.

When the dicing tape-integrated adhesive sheet is used in the expansion step for cutting as described above, the adhesive sheet in the dicing tape-integrated adhesive sheet is appropriately cut at the planned cutting part in the expanding step. Is required.

The present invention has been conceived under the above circumstances, and an object thereof is an adhesive sheet with an integrated dicing tape in order to obtain a semiconductor chip with an adhesive film by individualizing a semiconductor wafer. It is an object of the present invention to provide a dicing tape integrated adhesive sheet suitable for realizing good cutting of an adhesive sheet in an expanding step for cutting performed by using

According to the present invention, an adhesive sheet with an integrated dicing tape is provided. This dicing tape integrated adhesive sheet includes a dicing tape and an adhesive sheet. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive sheet is releasably adhered to the adhesive layer of the dicing tape. This adhesive sheet has a breaking strength of 1.2 N in a tensile test conducted on an adhesive sheet test piece having a width of 2 mm under the conditions of an initial chuck distance of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min. It is less than or equal to, preferably 1.1 N or less, and more preferably 1 N or less. At the same time, the adhesive sheet has a breaking elongation (ratio of the length of the stretched portion at the time of breaking to the length before stretching) of 1.2% or less in the same tensile test, preferably 1.1. % Or less, more preferably 1% or less. The dicing tape integrated adhesive sheet having such a structure can be used in the manufacturing process of the semiconductor device. Specifically, the dicing tape integrated adhesive sheet of the present invention is a dicing tape integrated back surface protective film in which the structure of the so-called back surface protective film is adopted for the adhesive sheet, and has a size equivalent to that of a chip for protecting the back surface of a semiconductor chip. It can be used to obtain a semiconductor chip with an adhesive film. Further, the dicing tape integrated adhesive sheet of the present invention is used as a dicing die bond film in which a so-called dicing film configuration is adopted for the adhesive sheet, in order to obtain a semiconductor chip with an adhesive film for die bonding having a size equivalent to that of the chip. can do.

As described above, the adhesive sheet in this dicing tape-integrated adhesive sheet is prepared under the conditions of an initial chuck distance of 16 mm, a load increase rate of 1.2 N / min, and a load increase rate of 1.2 N / min for an adhesive sheet test piece having a width of 2 mm. The breaking strength in the conducted tensile test is 1.2 N or less, preferably 1.1 N or less, and more preferably 1 N or less. Such a configuration makes it possible to obtain a semiconductor chip with an adhesive film in the manufacturing process of a semiconductor device, and when the dicing tape-integrated adhesive sheet is used to carry out an expanding process for cutting, the adhesiveness on the dicing tape It is suitable for suppressing the breaking force that should be applied to the adhesive sheet in order to cut the sheet.

As described above, the adhesive sheet in this dicing tape-integrated adhesive sheet has an initial chuck distance of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min for an adhesive sheet test piece having a width of 2 mm. The elongation at break in the conducted tensile test is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less. Such a configuration makes it possible to obtain a semiconductor chip with an adhesive film in the manufacturing process of a semiconductor device, and when the dicing tape-integrated adhesive sheet is used to carry out an expanding process for cutting, the adhesiveness on the dicing tape It is suitable for suppressing the tensile length required to cut the sheet.

As described above, the dicing tape-integrated adhesive sheet of the present invention is suitable for suppressing the breaking force that should act on the adhesive sheet in order to cut the adhesive sheet on the dicing tape, and the said one. It is suitable for suppressing the tensile length of the adhesive sheet for cutting. Such a dicing tape-integrated adhesive sheet realizes good cutting of the adhesive sheet when it is used in a cutting expanding process for obtaining a semiconductor chip with an adhesive film by individualizing a semiconductor wafer. It is suitable for doing. Specifically, it is as shown in Examples and Comparative Examples described later.

The adhesive sheet in the dicing tape integrated adhesive sheet preferably has a laminated structure including a first layer that is releasably adhered to the adhesive layer of the dicing tape and a second layer on the first layer. Have. Such a configuration is suitable for individually expressing, for example, the characteristics required for the surface of the adhesive sheet on the side of the dicing tape pressure-sensitive adhesive layer and the characteristics required for the surface on which the work is attached, which is opposite to the surface. Further, from the viewpoint of achieving both the functions required for the first layer and the second layer in the adhesive sheet, the value of the ratio of the thickness of the first layer to the thickness of the second layer is preferably 0.2 to 0.2. It is 1.5, more preferably 0.3 to 1.3, and more preferably 0.6 to 1.1.

When the adhesive sheet in the dicing tape integrated adhesive sheet is a back surface protective film, preferably, the first layer is thermosetting and the second layer is thermoplastic. In the present invention, the configuration in which the first layer has thermosetting property is such that when the surface of the first layer of the back surface protective film is engraved by laser marking and then undergoes a high temperature process such as a so-called reflow process, the engraved information is visually recognized. Suitable for ensuring sex. Further, in the present invention, the configuration in which the first layer has thermosetting property while the second layer exhibits thermoplasticity is more than the configuration in which the back surface protective film is composed of, for example, a single thermosetting layer, as described above. Suitable for achieving good cutting of the back surface protective film in the expanding process. That is, the above configuration in which the first layer has thermosetting property and the second layer exhibits thermoplasticity in the back surface protective film ensures visibility of engraved information and realizes good splittability in the back surface protective film. It is suitable for both.

It is sectional drawing of the adhesive sheet with integrated dicing tape which concerns on one Embodiment of this invention. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing tape integrated adhesive sheet shown in FIG. 1 is used is shown.

FIG. 1 is a schematic cross-sectional view of the dicing tape integrated adhesive sheet X according to the embodiment of the present invention. The dicing tape-integrated adhesive sheet X can be used in the manufacturing process of a semiconductor device, and has a laminated structure including a film 10 as an adhesive sheet and a dicing tape 20. In the present embodiment, the film 10 is a back surface protective film to be bonded to a circuit non-forming surface, that is, a back surface of a semiconductor wafer or the like which is a work. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The pressure-sensitive adhesive layer 22 has a pressure-sensitive adhesive surface 22a on the film 10 side. The film 10 is removably adhered to the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive surface 22a thereof. Further, the dicing tape integrated adhesive sheet X has a disk shape having a size corresponding to a semiconductor wafer or the like as a work. Such a dicing tape-integrated adhesive sheet X is specifically used as a dicing tape-integrated back surface protective film, for example, for obtaining a semiconductor chip having an adhesive film having a size equivalent to that of a chip for protecting the back surface of a semiconductor chip, as described later. It can be used in such an expanding process.

The film 10 which is a back surface protective film has a laminated structure including a laser mark layer 11 (first layer) and a wafer mount layer 12 (second layer). The laser mark layer 11 is located on the dicing tape 20 side of the film 10 and is in close contact with the dicing tape 20. The surface of the laser mark layer 11 on the dicing tape 20 side is laser-marked in the manufacturing process of the semiconductor device. Further, in the present embodiment, the laser mark layer 11 contains a thermosetting component and is already in a thermosetting state. The wafer mount layer 12 is located on the side of the film 10 on which a work such as a semiconductor wafer is bonded, and in the present embodiment, it is in an uncured state and exhibits thermoplasticity.

The laser mark layer 11 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or is accompanied by a thermosetting functional group capable of reacting with a curing agent to form a bond. It may have a composition containing a thermoplastic resin.

When the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, and a silicone resin. , And thermosetting polyimide resin. The laser mark layer 11 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Since the epoxy resin tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back surface protective film formed from the film 10 as described later, the laser mark of the film 10 tends to be small. It is preferable as the thermosetting resin in the layer 11. Further, as a curing agent for exhibiting thermosetting property in the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, and biphenyl type epoxy. Bifunctional epoxy resins such as resins, naphthalene type epoxy resins, fluorene type epoxy resins, phenol novolac type epoxy resins, orthocresol novolac type epoxy resins, trishydroxyphenylmethane type epoxy resins, and tetraphenylol ethane type epoxy resins and polyfunctionality. Epoxy resin can be mentioned. Examples of the epoxy resin include a hydantoin type epoxy resin, a trisglycidyl isocyanurate type epoxy resin, and a glycidylamine type epoxy resin. Further, the laser mark layer 11 may contain one kind of epoxy resin, or may contain two or more kinds of epoxy resins.

Phenol resins act as hardeners for epoxy resins, such as novolacs such as phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, and nonylphenol novolac resins. Type phenol resin can be mentioned. Further, examples of the phenol resin include a resol type phenol resin and polyoxystyrene such as polyparaoxystyrene. Particularly preferable as the phenol resin in the laser mark layer 11, is a phenol novolac resin or a phenol aralkyl resin. Further, the laser mark layer 11 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin.

When the laser mark layer 11 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl groups in the phenol resin are preferably 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy groups in the epoxy resin. Both resins are blended at a ratio of preferably 0.8 to 1.2 equivalents. Such a configuration is preferable in order to sufficiently proceed the curing reaction of the epoxy resin and the phenol resin when the laser mark layer 11 is cured.

The content ratio of the thermosetting resin in the laser mark layer 11 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass from the viewpoint of appropriately curing the laser mark layer 11.

The thermoplastic resin in the laser mark layer 11 has, for example, a binder function, and when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin is, for example, acrylic. Resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6 Examples thereof include polyamide resins such as nylon and 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The laser mark layer 11 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as a thermoplastic resin in the laser mark layer 11 because it has few ionic impurities and high heat resistance.

When the laser mark layer 11 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. "(Meta) acrylic" shall mean "acrylic" and / or "methacryl".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic resin, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic resin include (meth) acrylic acid alkyl ester and (meth) acrylic acid cyclo. Alkyl esters and (meth) acrylic acid aryl esters can be mentioned. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, and ecosil ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl (meth) acrylic acid and benzyl (meth) acrylic acid. As the constituent monomer of the acrylic resin, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin can be obtained by polymerizing a raw material monomer for forming the acrylic resin. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The acrylic resin may be composed of one or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, for the purpose of modifying its cohesive force and heat resistance. Examples of such a monomer include a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and ( Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloyloxynaphthalene sulfonic acid. Can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate.

The acrylic resin contained in the laser mark layer 11 is preferably a copolymer of a monomer appropriately selected from butyl acrylate, ethyl acrylate, acrylonitrile, acrylic acid, 2-ethylhexyl acrylate, and glycidyl acrylate. .. Such a configuration is preferable in the film 10 which is the back surface protective film, in order to achieve both the visibility of the engraved information by laser marking and the good splittability described later in the splitting expanding step.

When the laser mark layer 11 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above can be used as the constituent monomer of the acrylic resin contained in the laser mark layer 11. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, a curing agent capable of reacting with the thermosetting functional group is selected according to the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenol resin as described above can be used as the curing agent for the epoxy resin.

The composition for forming the laser mark layer 11 preferably contains a thermosetting catalyst. The blending of the thermosetting catalyst into the composition for forming the laser mark layer is preferable in order to sufficiently proceed the curing reaction of the resin component and increase the curing reaction rate in curing the laser mark layer 11. Examples of such a thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogen borane compounds. Examples of the imidazole compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-. 4-Methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Rium trimeritate, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1') ')]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltrilphosphine, tetraphenylphosphonium bromide, and methyltriphenylphosphonium. , Methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound shall also include a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of amine compounds include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane. The composition for forming a laser mark layer may contain one kind of thermosetting catalyst, or may contain two or more kinds of thermosetting catalysts.

The laser mark layer 11 may contain a filler. The blending of the filler in the laser mark layer 11 is preferable in order to adjust the physical properties such as the elastic modulus of the laser mark layer 11, the yield point strength, and the elongation at break. Examples of the filler include an inorganic filler and an organic filler. Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitrided material. Included are boron, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. Examples of the constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The laser mark layer 11 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. When the laser mark layer 11 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the laser mark layer 11 and ensuring heat resistance. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.). When the laser mark layer 11 contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 47% by mass or less, and more preferably 45% by mass or less.

The laser mark layer 11 contains a colorant in this embodiment. The colorant may be a pigment or a dye. Examples of the colorant include a black colorant, a cyan colorant, a magenta colorant, and a yellow colorant. In order to realize high visibility of the information stamped on the laser mark layer 11 by the laser marking, the laser mark layer 11 preferably contains a black colorant. Examples of black colorants include azo pigments such as carbon black, graphite, copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, magnetite, and oxidation. Examples thereof include chromium, iron oxide, molybdenum disulfide, composite oxide-based black dye, anthraquinone-based organic black dye, and azo-based organic black dye. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, and lamp black. Examples of the black colorant include CI Solvent Black 3, 7, 22, 27, 29, 34, 43, and 70. Examples of the black colorant include CI Direct Black 17, 19, 22, 22, 32, 38, 51, and 71. Examples of black colorants include CI Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, and 154. Be done. Examples of the black colorant include CI Dispers Black 1, 3, 3, 10, and 24. Examples of the black colorant include CI Pigment Black 1 and 7. The laser mark layer 11 may contain one kind of colorant or may contain two or more kinds of colorants. The content of the colorant in the laser mark layer 11 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize high visibility of the information imprinted on the laser mark layer 11 by the laser marking.

The laser mark layer 11 may contain one kind or two or more kinds of other components, if necessary. Examples of the other component include a flame retardant, a silane coupling agent, and an ion trapping agent. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydroxide-containing antimony (for example, "IXE-300" manufactured by Toa Synthesis Co., Ltd.), and zirconium phosphate having a specific structure (for example, "IXE-300" manufactured by Toa Synthesis Co., Ltd. IXE-100 "), magnesium silicate (for example," Kyoward 600 "manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example," Kyoward 700 "manufactured by Kyowa Chemical Industry Co., Ltd.). A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-). 5-Methylphenyl) Benzotriazole, 2- (2-Hydroxy-3,5-di-t-Butylphenyl) -5-Chlorobenzotriazole, 2- (2-Hydroxy-3-t-Butyl-5-Methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1) , 2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol, 2 -(2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2-H-benzotriazole-2-yl) Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2) -Il) -6- (1-Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t -Butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5) -Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-Chlorobenzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H) -Benzotriazole-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl]- Examples thereof include 2H-benzotriazole and methyl-3- [3- (2H-benzotriazole-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trap agent. Specific examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthralphin, tannin, gallic acid, methyl gallic acid, and pyrogallol.

The wafer mount layer 12 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or is accompanied by a thermosetting functional group capable of reacting with a curing agent to form a bond. It may have a composition containing a thermoplastic resin.

When the wafer mount layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, and a silicone resin. , And thermosetting polyimide resin. The wafer mount layer 12 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. Since the epoxy resin tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back surface protective film formed from the film 10 as described later, the wafer mount of the film 10 It is preferable as the thermosetting resin in the layer 12.

Examples of the epoxy resin in the wafer mount layer 12 include those described above as the epoxy resin which is the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are highly reactive and heat resistant with phenol resin as a curing agent. It is preferable as the epoxy resin in the wafer mount layer 12 because of its excellent properties.

Examples of the phenol resin that can act as a curing agent for the epoxy resin in the wafer mount layer 12 include those described above as the phenol resin that is the curing agent for the epoxy resin in the laser mark layer 11. The wafer mount layer 12 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin.

When the wafer mount layer 12 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl groups in the phenol resin are preferably 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy groups in the epoxy resin. Both resins are blended at a ratio of preferably 0.8 to 1.2 equivalents. Such a configuration is preferable in order to sufficiently proceed the curing reaction of the epoxy resin and the phenol resin when the wafer mount layer 12 is cured.

The content ratio of the thermosetting resin in the wafer mount layer 12 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass from the viewpoint of appropriately curing the wafer mount layer 12.

The thermoplastic resin in the wafer mount layer 12 has, for example, a binder function. When the wafer mount layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, as the thermoplastic resin, for example, when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Examples of the above-mentioned thermoplastic resin can be mentioned. The wafer mount layer 12 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as a thermoplastic resin in the wafer mount layer 12 because it has few ionic impurities and high heat resistance.

When the wafer mount layer 12 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. As the (meth) acrylic acid ester for forming a monomer unit of such an acrylic resin, for example, the above-mentioned (meth) as a constituent monomer of the acrylic resin when the laser mark layer 11 contains an acrylic resin as a thermoplastic resin. ) Acrylic acid ester can be used. As the constituent monomer of the acrylic resin in the wafer mount layer 12, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin may be composed of one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, in order to modify its cohesive force and heat resistance. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11.

The acrylic resin contained in the wafer mount layer 12 is preferably a copolymer of a monomer appropriately selected from butyl acrylate, ethyl acrylate, acrylonitrile, acrylic acid, 2-ethylhexyl acrylate, and glycidyl acrylate. .. Such a configuration is preferable in the film 10 which is the back surface protective film, in order to achieve both adhesiveness to the work and good splitting property described later in the expanding step for cutting.

When the wafer mount layer 12 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above can be used as the constituent monomer of the acrylic resin contained in the laser mark layer 11. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. Further, a curing agent capable of reacting with the thermosetting functional group is selected according to the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenol resin as described above can be used as the curing agent for the epoxy resin.

The composition for forming the wafer mount layer 12 preferably does not contain a thermosetting catalyst. When a thermosetting catalyst is blended in the composition for forming the wafer mount layer 12, the above-mentioned thermosetting catalyst is used as the thermosetting catalyst, for example, as a thermosetting catalyst that can be blended in the composition for forming a laser mark layer. be able to.

The wafer mount layer 12 may contain a filler. The blending of the filler in the wafer mount layer 12 is preferable in order to adjust the physical properties such as the elastic modulus of the wafer mount layer 12, the yield point strength, and the elongation at break. Examples of the filler in the wafer mount layer 12 include those described above as the filler in the laser mark layer 11. The wafer mount layer 12 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. When the wafer mount layer 12 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the wafer mount layer 12 and ensuring heat resistance. When the wafer mount layer 12 contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 47% by mass or less, and more preferably 45% by mass or less.

The wafer mount layer 12 may contain a colorant. Examples of the colorant in the wafer mount layer 12 include those described above as the colorant in the laser mark layer 11. The wafer mount layer 12 is black in order to secure a high contrast between the marking portion by the laser marking on the laser mark layer 11 side of the film 10 and the other portions to realize good visibility of the marking information. It preferably contains a colorant. The wafer mount layer 12 may contain one kind of colorant or may contain two or more kinds of colorants. The content of the colorant in the wafer mount layer 12 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize the above-mentioned good visibility of the marking information by laser marking.

The wafer mount layer 12 may contain one kind or two or more kinds of other components, if necessary. Examples of the other components include the flame retardant, the silane coupling agent, and the ion trapping agent specifically described above for the laser mark layer 11.

The thickness of the film 10 having a laminated structure including the laser mark layer 11 and the wafer mount layer 12 is preferably 8 μm or more, more preferably 10 μm or more, and preferably 20 μm or less, more preferably 15 μm or less. The value of the ratio of the thickness of the laser mark layer 11 (first layer) to the thickness of the wafer mount layer 12 (second layer) is preferably 0.2 to 1.5, more preferably 0.3 to. It is 1.3, more preferably 0.6 to 1.1.

The film 10 as described above (adhesive sheet as a back surface protective film) has an initial chuck distance of 16 mm, a load increase rate of 1.2 N, and a load increase rate of 1.2 N for a film test piece (adhesive sheet test piece) having a width of 2 mm. The breaking strength in the tensile test conducted under the condition of / minute is 1.2 N or less, preferably 1.1 N or less, and more preferably 1 N or less. At the same time, the film 10 has a breaking elongation (ratio of the length of the stretched portion at the time of breaking to the length before stretching) in the same tensile test of 1.2% or less, preferably 1.1%. Below, it is more preferably 1% or less. These can be measured for breaking strength and breaking elongation in a tensile test performed using a TMA testing machine (trade name "TMA Q400", manufactured by TA Instruments). In this measurement, the test piece cut out from the film 10 and set in the testing machine used is held at −15 ° C. for 5 minutes, and then the operating mode of the testing machine is set to the tensile mode, and as described above, the initial stage is set. The tensile test shall be performed under the conditions of a distance between chucks of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min. The breaking strength and breaking elongation of the film 10 can be adjusted by adjusting the composition of the constituent monomers of a thermoplastic resin such as acrylic resin contained in each layer of the film 10 and adjusting the thickness of each layer in the film 10. It is possible to do.

The base material 21 of the dicing tape 20 in the dicing tape integrated adhesive sheet X is an element that functions as a support in the dicing tape 20 or the dicing tape integrated adhesive sheet X. The base material 21 is, for example, a plastic base material, and a plastic film can be preferably used as the plastic base material. Examples of the constituent materials of the plastic base material include polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylsulfide, and aramid. , Fluororesin, Cellulosic resin, and Silicone resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolyprolene, polybutene, and polymethylpentene. Examples include ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Be done. Examples of polyesters include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 21 may be made of one kind of material or may be made of two or more kinds of materials. The base material 21 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 22 on the base material 21 is UV-curable as described later, the base material 21 preferably has UV-transmissibility. When the base material 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. In the present embodiment, the base material 21 is preferably a base material made of polyvinyl chloride or a base material made of an ethylene-vinyl acetate copolymer.

When the dicing tape 20 or the base material 21 is shrunk by, for example, partial heating when the dicing tape integrated adhesive sheet X is used, the base material 21 is preferably heat-shrinkable. When the base material 21 is made of a plastic film, the base material 21 is preferably a biaxially stretched film in order to realize isotropic heat shrinkage of the dicing tape 20 or the base material 21. The dicing tape 20 to the base material 21 has a heat shrinkage rate of preferably 2 to 30%, more preferably 2 to 25%, and more preferably 2 to 25% in a heat treatment test conducted under the conditions of a heating temperature of 100 ° C. and a heat treatment time of 60 seconds. It is 3 to 20%, more preferably 5 to 20%. The heat shrinkage rate refers to at least one of the so-called MD direction heat shrinkage rate and the so-called TD direction heat shrinkage rate.

The surface of the base material 21 on the pressure-sensitive adhesive layer 22 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 22. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high-voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.

The thickness of the base material 21 is preferably 40 μm or more, preferably 50 μm or more, from the viewpoint of ensuring the strength for the base material 21 to function as a support in the dicing tape 20 or the dicing tape integrated adhesive sheet X. , More preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 20 or the dicing tape integrated adhesive sheet X, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably. It is 150 μm or less.

The pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a pressure-sensitive adhesive. This adhesive may be an adhesive (adhesive strength-reducable adhesive) capable of intentionally reducing the adhesive strength by an external action in the process of using the adhesive sheet X integrated with the dicing tape. However, it may be a pressure-sensitive adhesive (adhesive strength non-reducing type pressure-sensitive adhesive) in which the adhesive strength is hardly or not reduced by an external action in the process of using the dicing tape-integrated adhesive sheet X. Whether to use a pressure-reducing adhesive or a non-reducing adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is separated by using a dicing tape-integrated adhesive sheet X. It can be appropriately selected according to the usage mode of the dicing tape-integrated adhesive sheet X, such as the method and conditions for individualizing the semiconductor chip.

When a pressure-reducing adhesive is used as the adhesive in the adhesive layer 22, it is relative to the state in which the adhesive layer 22 exhibits relatively high adhesive strength in the process of using the adhesive sheet X integrated with the dicing tape. It is possible to use the state showing low adhesive strength properly. For example, when the dying tape-integrated adhesive sheet X is used in the expanding step described later, the high adhesive strength state of the adhesive layer 22 is set in order to suppress / prevent the film 10 from floating or peeling from the adhesive layer 22. On the other hand, after that, in the pickup process described later for picking up the semiconductor chip with the die bond film from the dicing tape 20 of the adhesive sheet X integrated with the dicing tape, the semiconductor chip with the die bond film is picked up from the adhesive layer 22. It is possible to utilize the low adhesive strength state of the pressure-sensitive adhesive layer 22 for facilitation.

Examples of such adhesives capable of reducing adhesive strength include adhesives (radiocurable adhesives) that can be cured by irradiation in the process of using the adhesive sheet X integrated with dicing tape, and heat-foaming adhesives. Examples include agents. In the pressure-sensitive adhesive layer 22 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed of a pressure-reducing type pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-reducing adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 22 (for example, a work can be attached). The central area, which is the area to be attached, is formed of a pressure-reducing adhesive, and other parts (for example, the area to be applied to the ring frame, which is outside the central area) are non-reduced in adhesive force. It may be formed from a mold adhesive. Further, when the pressure-sensitive adhesive layer 22 has a multi-layer structure, all the layers forming the multi-layer structure may be formed of a pressure-reducing adhesive, and some layers in the multi-layer structure may be a type that can reduce the pressure. It may be formed from an adhesive.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays, and examples thereof include pressure-sensitive adhesives that are cured by irradiation with ultraviolet rays. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 includes, for example, a base polymer such as an acrylic polymer which is an acrylic pressure-sensitive adhesive, and a radiation-polymerizable product having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include an additive-type radiation-curable pressure-sensitive adhesive containing the above-mentioned monomer component and oligomer component.

The acrylic polymer described above preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic polymer, include (meth) acrylic acid alkyl ester and (meth) acrylic. Examples thereof include acid cycloalkyl ester and (meth) acrylic acid aryl ester, and more specifically, the same (meth) acrylic acid ester as described above for the acrylic resin in the laser mark layer 11 of the film 10. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Preferred examples of the constituent monomers of the acrylic polymer include 2-ethylhexyl acrylate and lauryl acrylate. Further, in order to appropriately express the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the ratio of the (meth) acrylic acid ester in the entire constituent monomers of the acrylic polymer is preferable. It is 40% by mass or more, more preferably 60% by mass or more.

Acrylic polymers include monomer units derived from one or more other monomers copolymerizable with (meth) acrylic acid esters, for example due to modification of their cohesiveness and heat resistance. May be good. Such monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Specifically, the above-mentioned ones can be mentioned as other monomers copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11 of the film 10.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropanthry (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. "(Meta) acrylate" shall mean "acrylate" and / or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately express the basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the ratio of the polyfunctional monomer in the total constituent monomers of the acrylic polymer is preferably 40% by mass or less. It is preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the method for manufacturing a semiconductor device in which the dicing tape 20 or the dicing tape integrated adhesive sheet X is used, the low in the adhesive layer 22 in the dicing tape 20 or the dicing tape integrated adhesive sheet X. Where the amount of the molecular weight substance is preferably small, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, for example, an external cross-linking agent in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound, and a melamine-based cross-linking agent. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 is preferably 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned radiopolymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. The one is suitable. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 22 can be appropriately reduced, and a base polymer such as an acrylic polymer is used. It is preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass with respect to 100 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the end of the polymer main chain in the polymer side chain or the polymer main chain. Also included is an intrinsically curable pressure-sensitive adhesive containing. Such an intrinsically curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 22.

As the base polymer contained in the intrinsic radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) and a radiopolymerizable carbon-carbon double bond that can react with the first functional group to be bonded is carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiopolymerizability of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of ease of reaction tracking. Further, since it is technically difficult to prepare a polymer having a highly reactive isocyanate group, from the viewpoint of easy preparation or availability of an acrylic polymer, the first functionality on the acrylic polymer side is described above. It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, the isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound is, for example, methacryloylisocyanate, 2 -Methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-. Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Benzophenone compounds include, for example, benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Examples include thioxanthone. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

The above-mentioned heat-foaming type pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands by heating is sealed in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include alkane hydrochlorides such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarboxylicamide and barium azodicarboxylate, and paratoluenesulfonyl Hydrazine compounds such as hydrazide and diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole, as well as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl. Examples thereof include N-nitroso compounds such as -N, N'-dinitrosoterephthalamide. Examples of substances that easily gasify and expand by heating for forming the above-mentioned heat-expandable microspheres include isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can burst due to the action of thermal expansion of the encapsulating substance can be used. Such substances include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the above-mentioned non-reducing adhesive strength type adhesive include a pressure-sensitive pressure-sensitive adhesive and a pressure-sensitive pressure-sensitive adhesive, which is obtained by pre-curing the above-mentioned radiation-curable pressure-sensitive adhesive by irradiation with radiation. , Can be mentioned. Depending on the type and content of the polymer component contained therein, the radiation-curable pressure-sensitive adhesive can exhibit adhesiveness due to the polymer component even when the adhesive strength is reduced by radiation curing, and can be used in a predetermined mode of use. It is possible to exert the adhesive force that can be used to hold the adherend adhesively. In the pressure-sensitive adhesive layer 22 of the present embodiment, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 22 may be formed of a non-adhesive strength non-reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed of a non-adhesive strength-reducing type pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a non-adhesive strength-reduced pressure-sensitive adhesive, or as described above, a predetermined portion of the pressure-sensitive adhesive layer 22 ( For example, the area to be attached to the ring frame, which is outside the area to be attached to the wafer) is formed of the non-adhesive force-reducing adhesive, and is formed from another portion (for example, the area to be attached to the wafer). A central region) may be formed from a pressure-reducing adhesive. When the pressure-sensitive adhesive layer 22 has a multi-layer structure, all the layers forming the multi-layer structure may be formed of a non-adhesive strength non-reducing type pressure-sensitive adhesive, and some layers in the multi-layer structure may be non-adhesive strength non-reducing type. It may be formed from an adhesive.

On the other hand, as the pressure-sensitive pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 22 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic pressure-sensitive adhesive, preferably contains a monomer unit derived from (meth) acrylic acid ester in a mass ratio. Including the most. Examples of such an acrylic polymer include the acrylic polymers described above for radiation-curable pressure-sensitive adhesives.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a colorant such as a pigment or a dye, and the like. The colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 22 is preferably 2 to 20 μm, more preferably 3 to 17 μm, and more preferably 5 to 15 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force of the pressure-sensitive adhesive layer 22 with respect to the film 10 before and after the radiation curing.

The dicing tape-integrated adhesive sheet X having the above configuration can be manufactured, for example, as follows.

In the production of the film 10 in the dicing tape integrated adhesive sheet X, first, a resin film (first resin film) forming the laser mark layer 11 and a resin film (first resin film) forming the wafer mount layer 12 are formed. 2 Resin film) and are individually prepared. The first resin film is produced by applying a resin composition for forming a laser mark layer on a predetermined separator to form a resin composition layer, and then drying and curing the composition layer by heating. Can be done. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate-based release agent. Can be mentioned. Examples of the method for applying the resin composition include roll coating, screen coating, and gravure coating. In the preparation of the first resin film, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. On the other hand, the second resin film is produced by applying a resin composition for forming a wafer mount layer on a predetermined separator to form a resin composition layer, and then drying the composition layer by heating. Can be done. In the production of the second resin film, the heating temperature is, for example, 90 to 150 ° C., and the heating time is, for example, 1 to 2 minutes. As described above, the above-mentioned first and second resin films can be produced in the form of each having a separator. Then, the exposed surfaces of the first and second resin films are bonded to each other. As a result, the above-mentioned film 10 having a laminated structure of the laser mark layer 11 and the wafer mount layer 12 is produced.

The dicing tape 20 of the dicing tape-integrated adhesive sheet X can be produced by providing the pressure-sensitive adhesive layer 22 on the prepared base material 21. For example, the resin base material 21 is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. can do. After the film formation, the film or the base material 21 is subjected to a predetermined surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied on the base material 21 or a predetermined separator to form the pressure-sensitive adhesive composition layer. To form. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, it is dried by heating if necessary, and a cross-linking reaction is caused if necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the base material 21, and then the separator is peeled off. As a result, the above-mentioned dicing tape 20 having a laminated structure of the base material 21 and the pressure-sensitive adhesive layer 22 is produced.

In the production of the dicing tape integrated adhesive sheet X, next, the laser mark layer 11 side of the film 10 is attached to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 30 to 50 ° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. When the pressure-sensitive adhesive layer 22 contains the above-mentioned radiation-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the base material may be irradiated after the bonding. The pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of 21. Alternatively, such irradiation may not be performed in the manufacturing process of the dicing tape-integrated adhesive sheet X (in this case, the pressure-sensitive adhesive layer 22 is radiation-cured in the process of using the dicing tape-integrated adhesive sheet X. Is possible). When the pressure-sensitive adhesive layer 22 is an ultraviolet curable type, the amount of ultraviolet irradiation for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ / cm ² . In the dicing tape-integrated adhesive sheet X, the region (irradiation region R) where the pressure-sensitive adhesive layer 22 is irradiated as a measure for reducing the adhesive strength is, for example, as shown in FIG. 1, the die-bond film bonding region in the pressure-sensitive adhesive layer 22. It is the area excluding the peripheral part of the inside.

As described above, the dicing tape integrated adhesive sheet X can be produced. The dicing tape-integrated adhesive sheet X may be provided with a separator (not shown) on the film 10 side at least in a form of covering the film 10. When the film 10 is smaller than the pressure-sensitive adhesive layer 22 of the dicing tape 20 and there is an unbonded region of the film 10 in the pressure-sensitive adhesive layer 22, for example, the separator covers at least the film 10 and the pressure-sensitive adhesive layer 22. It may be provided in a form. The separator is an element for protecting the film 10 and the pressure-sensitive adhesive layer 22 from being exposed, and is peeled off from the film when the dicing tape-integrated adhesive sheet X is used.

2 to 7 show an example of a semiconductor device manufacturing method in which the above-mentioned dicing tape integrated adhesive sheet X is used.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 2A and 2B, a modified region 30a is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held inside the wafer while being held by the wafer processing tape T1. Laser light with the same light spots is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T1 along the planned division line, and into the semiconductor wafer W due to ablation due to multiphoton absorption. A modified region 30a is formed. The modified region 30a is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30a on a planned division line by irradiating a semiconductor wafer with a laser beam is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. It is adjusted appropriately within the range of the following conditions.

[Laser light irradiation conditions]
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) Condensing lens Magnification 100 times or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Moving speed of the cutting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, with the semiconductor wafer W held by the wafer processing tape T1, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness, whereby FIG. 2 (c) ), A semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In the semiconductor wafer 30A, the modified region 30a is exposed on the second surface Wb side.

Next, as shown in FIG. 3A, the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the film 10 of the dicing tape integrated adhesive sheet X or the wafer mount layer 12 thereof. .. After that, as shown in FIG. 3B, the wafer processing tape T1 is peeled off from the semiconductor wafer 30A.

For example, after that, the laser mark layer 11 of the film 10 in the adhesive sheet X integrated with the dicing tape is irradiated with a laser from the side of the base material 21 of the dicing tape 20 to perform laser marking (laser marking step). By this laser marking, various information such as character information and graphic information is given to each semiconductor element that is later separated into a semiconductor chip. In this step, in one laser marking process, it is possible to collectively and efficiently perform laser marking on a large number of semiconductor elements in the semiconductor wafer 30A. Examples of the laser used in this step include a gas laser and a solid-state laser. Examples of the gas laser include a carbon dioxide gas laser (CO ₂ laser) and an excimer laser. Examples of the solid-state laser include an Nd: YAG laser.

When the pressure-sensitive adhesive layer 22 in the dicing tape-integrated adhesive sheet X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is replaced with the above-mentioned irradiation in the manufacturing process of the dicing tape-integrated adhesive sheet X. After bonding the adhesive layer 22 to the film 10, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of the base material 21. The irradiation amount is, for example, 50 to 500 mJ / cm ² . In the dicing tape-integrated adhesive sheet X, the region where the pressure-sensitive adhesive layer 22 is irradiated as a measure for reducing the adhesive strength (irradiation region R shown in FIG. 1) is, for example, in the film 10 bonding region in the pressure-sensitive adhesive layer 22. This is the area excluding the peripheral part.

Next, after the ring frame 41 is attached on the pressure-sensitive adhesive layer 22 of the dicing tape-integrated adhesive sheet X, as shown in FIG. 4A, the dicing tape-integrated adhesiveness with the semiconductor wafer 30A is attached. The sheet X is fixed to the holder 42 of the expanding device.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 4 (b), and the semiconductor wafer 30A is fragmented into a plurality of semiconductor chips 31. At the same time, the film 10 of the dicing tape-integrated adhesive sheet X is cut into small pieces of film 10'to obtain a semiconductor chip 31 with a film. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 20 at the lower side in the drawing of the dicing tape integrated adhesive sheet X, and the dicing tape to which the semiconductor wafer 30A is attached is attached. The dicing tape 20 of the integrated adhesive sheet X is expanded so as to be stretched in the two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed on the dicing tape 20 under the condition that a tensile stress of, for example, 1 to 100 MPa is generated. The temperature condition in this step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 500 mm / sec. The amount of expansion (distance at which the push-up member 43 rises) in this step is, for example, 50 to 200 mm. By such a cool expanding step, the film 10 of the adhesive sheet X with integrated dicing tape is cut into small pieces of film 10'to obtain a semiconductor chip 31 with a film. Specifically, in this step, cracks are formed in the fragile modified region 30a of the semiconductor wafer 30A, and individualization into the semiconductor chip 31 occurs. At the same time, in this step, in the film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region in which each semiconductor chip 31 of the semiconductor wafer 30A is in close contact. The tensile stress generated in the dicing tape 20 acts on the portion of the wafer facing the crack-forming portion without such a deformation suppressing effect. As a result, the portion of the film 10 facing the crack-forming portion between the semiconductor chips 31 is cut. After this step, as shown in FIG. 4C, the push-up member 43 is lowered to release the expanded state of the dicing tape 20.

Next, the second expanding step under relatively high temperature conditions is performed as shown in FIG. 5A, and the distance (separation distance) between the semiconductor chips 31 with a film is increased. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 20 of the dicing tape integrated adhesive sheet X is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (the speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor chip 31 with a film is widened to such an extent that the semiconductor chip 31 with a film can be appropriately picked up from the dicing tape 20 in the pickup step described later. After this step, as shown in FIG. 5B, the push-up member 43 is lowered to release the expanded state of the dicing tape 20. In order to prevent the distance between the semiconductor chips 31 with a film on the dicing tape 20 from being narrowed after the expanding state is released, the portion of the dicing tape 20 outside the semiconductor chip 31 holding region is heated before the expanding state is released. It is preferable to shrink the film.

Next, after undergoing a cleaning step as necessary to clean the semiconductor chip 31 side of the dicing tape 20 with the semiconductor chip 31 with a film using a cleaning liquid such as water, the semiconductor chip with a film is as shown in FIG. 31 is picked up from the dicing tape 20 (pickup process). For example, with respect to the semiconductor chip 31 with a film to be picked up, the pin member 44 of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 20, pushed up through the dicing tape 20, and then sucked and held by the suction jig 45. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7, the semiconductor chip 31 with a film is flip-chip mounted on the mounting substrate 51. Examples of the mounting board 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The semiconductor chip 31 is electrically connected to the mounting substrate 51 via a bump 52. Specifically, the electrode pad (not shown) of the semiconductor chip 31 on the circuit forming surface side and the terminal portion (not shown) of the mounting substrate 51 are electrically connected via the bump 52. The bump 52 is, for example, a solder bump. A thermosetting underfill agent 53 is interposed between the semiconductor chip 31 and the mounting substrate 51. For example, flip mounting of the semiconductor chip 31 on the mounting substrate 51 is realized by undergoing a so-called reflow process in a state where the mounting substrate 51 is accompanied by a semiconductor chip 31 with a film on the mounting substrate 51.

As described above, a semiconductor device in which the film 10'which is a protective film is provided on the back surface of the semiconductor chip 31 can be manufactured.

In the present semiconductor device manufacturing method, instead of the above-described configuration in which the semiconductor wafer 30A is bonded to the dicing tape integrated adhesive sheet X, the semiconductor wafer 30B produced as follows is bonded to the dicing tape integrated adhesive sheet X. It may be attached to the sex sheet X.

In the production of the semiconductor wafer 30B, first, as shown in FIGS. 8A and 8B, a dividing groove 30b is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T2. A dividing groove 30b having a predetermined depth is formed on the first surface Wa side by using a rotating blade such as a dicing device. The dividing groove 30b is a gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 8 and 9, the dividing groove 30b is schematically represented by a thick line).

Next, as shown in FIG. 8C, the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 from the semiconductor wafer W is attached. Is peeled off.

Next, as shown in FIG. 8D, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30B that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30B has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30B, that is, the distance between the second surface Wb of the semiconductor wafer 30B and the tip of the dividing groove 30b on the second surface Wb side is, for example, 1 to 30 μm.

9 (a) and 9 (b) specifically represent a first expanding step (cool expanding step) performed after the semiconductor wafer 30B is bonded to the dicing tape integrated adhesive sheet X. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 20 at the lower side in the drawing of the dicing tape integrated adhesive sheet X, and the dicing tape to which the semiconductor wafer 30B is attached is attached. The dicing tape 20 of the integrated adhesive sheet X is expanded so as to be stretched in the two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30B. This expansion is performed under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing tape 20. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. The expanding speed (the speed at which the push-up member 43 rises) in the cool expanding step is, for example, 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is, for example, 3 to 16 mm.

In this step, the thin-walled and fragile portion of the semiconductor wafer 30B is split and individualized into the semiconductor chip 31. At the same time, in this step, in the film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region in which each semiconductor chip 31 is in close contact, while deformation is suppressed between the semiconductor chips 31. The tensile stress generated in the dicing tape 20 acts on the portion facing the dividing groove of the dicing tape 20 in a state where such a deformation suppressing action does not occur. As a result, the portion of the film 10 facing the dividing groove between the semiconductor chips 31 is cut. The semiconductor chip 31 with a film thus obtained is subjected to a mounting process in a semiconductor device manufacturing process after undergoing the above-mentioned pickup process with reference to FIG.

In the present semiconductor device manufacturing method, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. 8 (d). After going through the above-mentioned process with reference to FIG. 8 (c), in the wafer thinning step shown in FIG. 10, the wafer is brought to a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape T3. The semiconductor wafer split body 30C including the plurality of semiconductor chips 31 and held on the wafer processing tape T3 is formed by being thinned by grinding from the second surface Wb. In this step, a method of grinding the wafer until the dividing groove 30b itself is exposed on the second surface Wb side (first method) may be adopted, or from the second surface Wb side to the dividing groove 30b. A method in which the wafer is ground to the front, and then a crack is generated between the dividing groove 30b and the second surface Wb by the action of a pressing force from the rotary grindstone to the wafer to form the semiconductor wafer divided body 30C (second). Method) may be adopted. Depending on the method adopted, the depth of the dividing groove 30b formed as described above with reference to FIGS. 8 (a) and 8 (b) from the first surface Wa is appropriately determined. .. In FIG. 10, the dividing groove 30b that has undergone the first method, the dividing groove 30b that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. The semiconductor wafer divided body 30C produced in this manner is bonded to the dicing tape integrated adhesive sheet X instead of the semiconductor wafer 30A, and then the above-described steps are performed with reference to FIGS. 3 to 6. You may.

11 (a) and 11 (b) specifically represent a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30C is bonded to the dicing tape integrated adhesive sheet X. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 20 on the lower side in the drawing of the dicing tape integrated adhesive sheet X, and the semiconductor wafer divided body 30C is bonded. The dicing tape 20 of the dicing tape integrated adhesive sheet X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30C. This expansion is performed on the dicing tape 20 under the condition that a tensile stress of, for example, 1 to 100 MPa is generated. The temperature condition in this step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 500 mm / sec. The amount of expansion in this step is, for example, 50 to 200 mm. By such a cool expanding step, the film 10 of the adhesive sheet X with integrated dicing tape is cut into small pieces of film 10'to obtain a semiconductor chip 31 with a film. Specifically, in this step, in the film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region in which each semiconductor chip 31 of the semiconductor wafer divided body 30C is in close contact. On the other hand, the tensile stress generated in the dicing tape 20 acts on the portion of the semiconductor chip 31 facing the dividing groove 30b without such a deformation suppressing action. As a result, the portion of the film 10 facing the dividing groove 30b between the semiconductor chips 31 is cut. The semiconductor chip 31 with a film thus obtained is subjected to a mounting process in a semiconductor device manufacturing process after undergoing the above-mentioned pickup process with reference to FIG.

For example, the film 10 (adhesive sheet as a back surface protective film) in the dicing tape integrated adhesive sheet X that can be used in the process of manufacturing a semiconductor device as described above is a film test piece (adhesive) having a width of 2 mm as described above. The breaking strength in the tensile test conducted under the conditions of an initial chuck distance of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min for the sex sheet test piece) is 1.2 N or less, preferably 1.1 N or less. , More preferably 1N or less. Such a configuration is an expanding step for cutting using the dicing tape integrated adhesive sheet X in order to obtain the semiconductor chip 31 with a film in the manufacturing process of the semiconductor device as described above (the first expanding step described above). Is suitable for suppressing the breaking force that should act on the film 10 in order to cut the film 10 on the dicing tape 20.

As described above, the film 10 (adhesive sheet as the back surface protective film) in the dicing tape integrated adhesive sheet X has an initial chuck distance of 16 mm for a film test piece (adhesive sheet test piece) having a width of 2 mm. The breaking elongation in a tensile test conducted under the conditions of 15 ° C. and a load increasing rate of 1.2 N / min is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less. Such a configuration is an expanding step for cutting using the dicing tape integrated adhesive sheet X in order to obtain the semiconductor chip 31 with a film in the manufacturing process of the semiconductor device as described above (the first expanding step described above). Is suitable for suppressing the tensile length required to cut the film 10 on the dicing tape 20.

As described above, the dicing tape-integrated adhesive sheet X is suitable for suppressing the breaking force that should act on the film 10 in order to cut the film 10 on the dicing tape 20, and for the cutting. It is suitable for suppressing the tensile length of the film 10. Such a dicing tape-integrated adhesive sheet X is suitable for realizing good cutting of the film 10 when used in the expanding step for cutting.

As described above, the film 10 in the dicing tape integrated adhesive sheet X has a laser mark layer 11 (first layer) that is detachably adhered to the adhesive layer 22 of the dicing tape 20 and a wafer mount layer on the laser mark layer 11 It has a laminated structure including 12 (second layer). Such a configuration is suitable for individually expressing the characteristics required for the dicing tape pressure-sensitive adhesive layer side surface of the film 10 and the characteristics required for the work-attached surface opposite to the surface. Further, the value of the ratio of the thickness of the laser mark layer 11 to the thickness of the wafer mount layer 12 is preferably 0.2 to 1.5, more preferably 0.3 to 1.3, as described above. It is preferably 0.6 to 1.1. Such a configuration is preferable in order to achieve both the functions required for the laser mark layer 11 (first layer) and the wafer mount layer 12 (second layer) in the film 10.

The dicing tape-integrated adhesive sheet X of the present embodiment is a dicing tape-integrated back surface protective film, and as described above, the laser mark layer 11 has thermosetting property and the wafer mount layer 12 exhibits thermoplasticity. .. The configuration in which the laser mark layer 11 has thermosetting property provides visibility of the marking information when the surface of the laser mark layer 11 of the film 10 is engraved by laser marking and then undergoes a high temperature process such as a so-called reflow process. Suitable for securing. Further, the configuration in which the laser mark layer 11 has thermosetting property and the wafer mount layer 12 exhibits thermoplasticity is suitable for realizing good film cutting in the splitting expanding step. That is, the above configuration in which the laser mark layer 11 has thermosetting property and the wafer mount layer 12 exhibits thermoplasticity in the film 10 ensures the visibility of the engraved information and realizes good splittability in the film 10. It is suitable for both.

In the dicing tape integrated adhesive sheet X, the thickness of the film 10 is preferably 8 μm or more, more preferably 10 μm or more, and preferably 20 μm or less, more preferably 15 μm or less, as described above. Such a configuration is preferable in order to realize the above-mentioned good splittability in the film 10.

[Example 1]
<Making a backside protective film>
In the production of the back surface protective film in the dicing tape integrated adhesive sheet, first, the first resin film that forms the laser mark layer (LM layer) and the second resin film that forms the wafer mount layer (WM layer) are formed. A resin film and a resin film were individually prepared.

In the production of the first resin film, first, acrylic resin A ₁ (trade name "Taisan Resin SG-P3", weight average molecular weight is 850,000, glass transition temperature Tg is 12 ° C., manufactured by Nagase ChemteX Corporation) 100 mass. 51.5 parts by mass of epoxy resin B ₁ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) and epoxy resin B ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) 22 Parts by mass and phenol resin C ₁ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) 76.5 parts by mass and filler (trade name "SO-25R", silica, average particle size is 0.5 μm, 187.5 parts by mass of Admatex Co., Ltd., 15 parts by mass of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.), and thermosetting catalyst (trade name "Curesol 2PZ", Shikoku Kasei 22 parts by mass (manufactured by Kogyo Co., Ltd.) was added to and mixed with methyl ethyl ketone to obtain a resin composition having a solid content concentration of 36% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to dry and thermoset to prepare a first resin film (a film forming a laser mark layer) having a thickness of 8 μm on a PET separator. ..

In the production of the second resin film, first, _{100 parts by mass of acrylic resin A 1} (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) and epoxy resin B ₃ (trade name "EPPN-501HY") are produced. , Nippon Kayaku Co., Ltd.) 65.5 parts by mass, phenol resin C ₂ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.) 84.5 parts by mass, filler (trade name "SO-25R" , Silica, average particle size 0.5 μm, manufactured by Admatex Co., Ltd., 177 parts by mass, and black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.), 15 parts by mass, added to methyl ethyl ketone. To obtain a resin composition having a solid content concentration of 36% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer is heated at 130 ° C. for 2 minutes and dried to prepare an uncured second resin film (film forming a wafer mount layer) having a thickness of 7 μm on a PET separator. did.

The first resin film on the PET separator and the second resin film on the PET separator prepared as described above were bonded together using a laminator. Specifically, the exposed surfaces of the first and second resin films were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.85 MPa. As described above, the back surface protective film of Example 1 was produced. The compositions of the laser mark layer (LM layer) and the wafer mount layer (WM layer) in Example 1 and each of the Examples and Comparative Examples described later are listed in Tables 1 and 2 (Tables 1 and 2 show the composition of each layer). The unit of each numerical value is the relative "parts of mass" within the layer).

<Making dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and peroxidation as a polymerization initiator. A mixture containing 0.4 parts by mass of benzoyl and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the _{acrylic polymer P 1 was obtained.} Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was mixed at 50 ° C. for 60 hours under an air atmosphere. Stirred in (addition reaction). 0 in the reaction solution, the amount of the MOI is 12 parts by weight with respect to the acrylic polymer P ₁ 100 parts by weight, the amount of dibutyltin dilaurate, relative to the acrylic polymer P ₁ 100 parts by weight. 1 part by mass. By this addition reaction, a polymer solution containing _{an acrylic polymer P 2} having a methacrylate group in the side chain was obtained. Next, in the polymer solution, ₂ parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and 2 parts by mass of a photopolymerization initiator (2 parts by mass) with respect to 100 parts by mass of the acrylic polymer P 2 The trade name "Irgacure 369" (manufactured by BASF) and toluene were added and mixed to obtain a pressure-sensitive adhesive composition having a solid content concentration of 28% by mass. Next, the pressure-sensitive adhesive composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. .. Next, this composition layer was heat-dried at 120 ° C. for 2 minutes to form an adhesive layer having a thickness of 5 μm on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "NRW # 125", thickness 125 μm, manufactured by Gunze Co., Ltd.) was applied to the exposed surface of this pressure-sensitive adhesive layer. It was bonded at room temperature. Then, this laminated body was stored at 23 ° C. for 72 hours. The dicing tape was produced as described above.

<Manufacturing of backside protective film with integrated dicing tape>
The above-mentioned back surface protective film of Example 1 with a PET separator was punched into a circle having a diameter of 330 mm. The above-mentioned dicing tape with a PET separator was punched into a circle having a diameter of 370 mm. Then, after peeling the PET separator on the laser mark layer side from the back surface protective film and peeling the PET separator from the dicing tape, the laser mark layer side exposed on the back surface protective film and the adhesive layer side exposed on the dicing tape And were pasted together using a laminator. In this bonding, the bonding speed was 10 mm / min, the temperature condition was 40 ° C., and the pressure condition was 0.15 MPa. Further, the bonding was performed while aligning the center of the dicing tape and the center of the die bond film so as to coincide with each other. As described above, the dicing tape integrated back surface protective film of Example 1 having a laminated structure including the dicing tape and the dicing film was produced.

[Example 2]
In the production of the second resin film (resin film forming the wafer mount layer), instead of 100 parts by mass of _{acrylic resin A 1 , acrylic resin A 2} (trade name "Taisan Resin SG-N50", weight average molecular weight is 45). The glass transition temperature Tg was 0 ° C., 100 parts by mass of Nagase ChemteX Corporation was used, and the content of the filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) was 177 parts by mass. The back surface protective film integrated with the dicing tape of Example 2 was produced in the same manner as the back surface protective film integrated with the dicing tape of Example 1 except that the amount was 217 parts by mass instead of the above.

[Example 3]
In the production of the second resin film (resin film forming the wafer mount layer), instead of 100 parts by mass of _{acrylic resin A 1 , acrylic resin A 2} (trade name "Taisan Resin SG-N50", Nagase ChemteX Corporation) Example 1 except that 100 parts by mass was used and the content of the filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) was changed to 265 parts by mass instead of 177 parts by mass. In the same manner as the dicing tape integrated back surface protective film of Example 3, the dicing tape integrated back surface protective film of Example 3 was produced.

[Example 4]
In the production of the second resin film (resin film forming the wafer mount layer), instead of 100 parts by mass of _{acrylic resin A 1 , acrylic resin A 3} (trade name "Taisan Resin SG-708-6", weight average molecular weight) 700,000, glass transition temperature Tg is 4 ° C, 100 parts by mass of Nagase ChemteX Corporation was used, and the content of filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) was 177. A dicing tape-integrated back surface protective film of Example 4 was produced in the same manner as the dicing tape-integrated back surface protective film of Example 1 except that 265 parts by mass was used instead of the mass part.

[Example 5]
In the production of the second resin film (resin film forming the wafer mount layer), instead of 100 parts by mass of _{acrylic resin A 1 , acrylic resin A 4} (trade name "Taisan Resin SG-70L", Nagase ChemteX Corporation) A back surface protective film integrated with a dicing tape of Example 5 was produced in the same manner as the back surface protective film integrated with a dicing tape of Example 1 except that 100 parts by mass was used.

[Example 6]
The back surface protective film was prepared in the same manner as the dicing tape integrated back surface protective film of Example 1 except that the thickness of the laser mark layer was 8 μm to 20 μm and the thickness of the wafer mount layer was 7 μm to 5 μm. The back surface protective film integrated with the dicing tape of Example 6 was produced.

[Example 7]
The back surface protective film was prepared in the same manner as the dicing tape integrated back surface protective film of Example 1 except that the thickness of the laser mark layer was 8 μm to 5 μm and the thickness of the wafer mount layer was 5 μm to 5 μm. The back surface protective film integrated with the dicing tape of Example 7 was produced.

[Example 8]
The back surface protective film was prepared in the same manner as the dicing tape integrated back surface protective film of Example 1 except that the thickness of the laser mark layer was 8 μm to 10 μm and the thickness of the wafer mount layer was 7 μm to 15 μm. The back surface protective film integrated with the dicing tape of Example 8 was produced.

[Comparative Example 1]
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin B ₃ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 70 parts by mass , 80 parts by mass of phenol resin C ₁ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.), 175 parts by mass of filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and black dye. 15 parts by mass (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 30% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes and dried to prepare a back surface protective film having a thickness of 25 μm on a PET separator. Then, the dicing tape of Comparative Example 1 was used in the same manner as the dicing tape integrated back surface protective film of Example 1 except that the back surface protective film of Comparative Example 1 was used instead of the above-mentioned back surface protective film of Example 1. An integrated back surface protective film was produced.

[Comparative Example 2]
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin B ₁ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) 50 mass 20 parts by mass of epoxy resin B ₂ (trade name "JER YL980", manufactured by Mitsubishi _{Chemical Co., Ltd.), 75 parts by mass of phenol resin C 1} (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) Add 175 parts by mass of filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) and 15 parts by mass of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) to methyl ethyl ketone. The mixture was mixed to obtain a resin composition having a solid content concentration of 30% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes and dried to prepare a back surface protective film having a thickness of 25 μm on a PET separator. Then, the dicing tape of Comparative Example 2 was used in the same manner as the dicing tape integrated back surface protective film of Example 1 except that the back surface protective film of Comparative Example 2 was used instead of the above-mentioned back surface protective film of Example 1. An integrated back surface protective film was produced.

[Comparative Example 3]
In the production of the back surface protective film, the dicing tape integrated back surface protective film of Comparative Example 3 was produced in the same manner as the dicing tape integrated back surface protective film of Example 1 except that the thickness of the wafer mount layer was changed from 7 μm to 17 μm. did.

<Breaking strength of backside protective film and>
For each film test piece (width 2 mm × length 20 mm) cut out from the above-mentioned back surface protective film of Examples 1 to 8 and Comparative Examples 1 to 3, a TMA tester (trade name “TMA Q400”, TA instrument). The breaking strength (N) and breaking elongation (%) were measured in a tensile test conducted using (manufactured by the same company). In this tensile test, after holding the film test piece to be measured at -15 ° C for 5 minutes, the operating mode of the testing machine is set to the tensile mode, the initial chuck distance is 16 mm, -15 ° C, and the load is increased. The test was performed under the condition of a speed of 1.2 N / min. If the TMA tester used did not break at the load upper limit of 1.2 N, the breaking strength was evaluated as "more than 1.2", and the breaking elongation was calculated as the elongation (%) at a load of 1.2 N. It was evaluated as exceeding. These results are listed in Tables 1 and 2.

<Cutability of backside protective film>
Using each of the above-mentioned dicing tape integrated back surface protective films of Examples 1 to 8 and Comparative Examples 1 to 3, the following bonding step, the first expanding step for cutting (cool expanding step), and , A second expanding step (normal temperature expanding step) for separation was performed.

In the bonding process, the semiconductor wafer divider held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the back surface protective film of the dicing tape integrated back surface protective film. Then, the wafer processing tape was peeled off from the semiconductor wafer divided body. In the bonding, a laminator was used, the temperature condition was 80 ° C., and the pressure condition was 0.15 MPa. Further, the semiconductor wafer divided body is formed and prepared as follows. First, about the bare wafer (diameter 12 inches, thickness 780 μm, manufactured by Tokyo Kako Co., Ltd.) held together with the ring frame on the wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation). , From the side of one side, a dicing device (trade name "DFD6260", manufactured by DISCO Corporation) is used, and a dividing groove for individualization (width 25 μm, depth 330 μm, one section 0. 8 mm × 0.8 mm in a grid pattern) was formed. Next, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko KK) is attached to the dividing groove forming surface, and then the above wafer processing tape (trade name "V12S-R2-P") is attached. Was peeled off from the wafer. After that, using a back grinding device (trade name "DGP8760", manufactured by DISCO Co., Ltd.), the wafer is ground to a thickness of 300 μm from the other surface (the surface on which the dividing groove is not formed) of the wafer. It was thinned to. As described above, the semiconductor wafer divided body (in a state of being held by the wafer processing tape) was formed. The semiconductor wafer segment contains a plurality of semiconductor chips (0.8 mm × 0.8 mm).

The cool expanding step was carried out in the cool expanding unit using a die separating device (trade name "Die Separator DDS2300", manufactured by DISCO Co., Ltd.). Specifically, first, a 12-inch diameter SUS ring frame (manufactured by DISCO Corporation) was attached to the dicing tape adhesive layer in the above-mentioned dicing tape integrated back surface protective film accompanied by a semiconductor wafer divided body at room temperature. .. Next, the dicing tape-integrated back surface protective film was set in the apparatus, and the dicing tape of the dicing tape-integrated back surface protective film accompanied by the semiconductor wafer divider was expanded by the cool expanding unit of the apparatus. In this cool expanding step, the temperature is −15 ° C., the expanding speed (pushing speed) is 100 mm / sec, and the expanding amount (pushing amount) is 15 mm.

The normal temperature expanding step was carried out in the normal temperature expanding unit using a die separate device (trade name “Die Separator DDS2300”, manufactured by DISCO Co., Ltd.). Specifically, the dicing tape of the back surface protective film integrated with the dicing tape accompanied by the semiconductor wafer divided body that has undergone the above-mentioned cool expanding step was expanded by the room temperature expanding unit of the same apparatus. In this room temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 15 mm. After that, in the dicing tape integrated back surface protective film that had undergone normal temperature expansion, the peripheral edge portion outside the work attachment region was heat-shrinked. In this treatment, the heating temperature is 200 ° C.

Regarding the splittability of the back surface protective film, it is excellent when the back surface protective film is split over the entire planned section line after the above process using the dicing tape integrated back surface protective film (◎). When the split generated by the back surface protective film is 90% or more and less than 100% of the planned cut line, it is evaluated as good (○), and the split generated by the back surface protective film is less than 90% of the planned cut line. If it was, it was evaluated as defective (x). The evaluation results are listed in Tables 1 and 2.

[Evaluation]
According to the back surface protective film of Examples 1 to 8, good splitting could be realized in the expanding step performed by using the back surface protective film integrated with the dicing tape in order to obtain the semiconductor chip with the back surface protective film.

X Dicing tape integrated adhesive sheet 10,10'film (adhesive sheet)
20 Dicing tape 21 Base material 22 Adhesive layer W, 30A, 30B Semiconductor wafer 30C Semiconductor wafer divided body 30a Modified region 30b Divided groove 31 Semiconductor chip

Claims (5)

A dicing tape having a laminated structure including a base material and an adhesive layer,
An adhesive sheet that is detachably adhered to the adhesive layer of the dicing tape is provided.
The adhesive sheet has a breaking strength of 1.2 N or less in a tensile test conducted on an adhesive sheet test piece having a width of 2 mm under the conditions of an initial chuck distance of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min. A dicing tape-integrated adhesive sheet having a breaking elongation of 1.2% or less. The dicing tape integrated type according to claim 1, wherein the adhesive sheet has a laminated structure including a first layer in close contact with the adhesive layer of the dicing tape and a second layer on the first layer. Adhesive sheet. The dicing tape-integrated adhesive sheet according to claim 2, wherein the value of the ratio of the thickness of the first layer to the thickness of the second layer is 0.2 to 1.5. The dicing tape integrated adhesive sheet according to any one of claims 1 to 3, wherein the adhesive sheet is a back surface protective film. The dicing tape-integrated adhesive sheet according to claim 2 or 3, wherein the adhesive sheet is a back surface protective film, the first layer is thermosetting, and the second layer is thermoplastic.

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