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JP6889447B2 - Titanium plating solution manufacturing method and titanium plating product manufacturing method - Google Patents
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JP6889447B2 - Titanium plating solution manufacturing method and titanium plating product manufacturing method - Google Patents

Titanium plating solution manufacturing method and titanium plating product manufacturing method Download PDF

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JP6889447B2
JP6889447B2 JP2018552427A JP2018552427A JP6889447B2 JP 6889447 B2 JP6889447 B2 JP 6889447B2 JP 2018552427 A JP2018552427 A JP 2018552427A JP 2018552427 A JP2018552427 A JP 2018552427A JP 6889447 B2 JP6889447 B2 JP 6889447B2
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titanium
plating solution
titanium plating
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JPWO2018096769A1 (en
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昂真 沼田
昂真 沼田
真嶋 正利
正利 真嶋
知之 粟津
知之 粟津
光靖 小川
光靖 小川
野平 俊之
俊之 野平
安田 幸司
幸司 安田
勇太郎 法川
勇太郎 法川
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Sumitomo Electric Industries Ltd
Kyoto University NUC
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Kyoto University NUC
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation
    • C25D21/14Controlled addition of electrolyte components
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/66Electroplating: Baths therefor from melts
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation

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  • Automation & Control Theory (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
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Description

本発明は、チタンめっき液の製造方法及びチタンめっき製品の製造方法に関する。本出願は、2016年11月22日に出願した日本特許出願である特願2016−227050号に基づく優先権を主張する。当該日本特許出願に記載されたすべての記載内容は、参照によって本明細書に援用される。 The present invention relates to a method for producing a titanium plating solution and a method for producing a titanium plating product. This application claims priority based on Japanese Patent Application No. 2016-227050, which is a Japanese patent application filed on November 22, 2016. All the contents of the Japanese patent application are incorporated herein by reference.

チタンは耐腐食性、耐熱性及び比強度に優れた特性を有する金属である。しかし、チタンは生産コストが高く、製錬や加工が難しいことが広範な利用の妨げとなっている。現在、チタンやチタン合金の高耐食性や高強度等の特性を利用する方法のひとつとして、CVD(Chemical Vapor Deposition)やPVD(Physical Vapor Deposition)等を用いた乾式成膜法が一部工業化されているが、乾式成膜法では複雑な形状の基板に成膜できないという問題がある。この問題を解決し得るチタン成膜法としては、溶融塩中でチタンを電析させる方法が考えられる。 Titanium is a metal having excellent corrosion resistance, heat resistance and specific strength. However, the high production cost of titanium and the difficulty of smelting and processing hinder its widespread use. Currently, as one of the methods for utilizing the characteristics such as high corrosion resistance and high strength of titanium and titanium alloys, a dry film forming method using CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition) has been partially industrialized. However, there is a problem that the dry film forming method cannot form a film on a substrate having a complicated shape. As a titanium film forming method capable of solving this problem, a method of electrodepositing titanium in a molten salt can be considered.

例えば、特開2015−193899号公報(特許文献1)には、KF−KClにKTiFやTiOを添加した溶融塩浴を用いてFe線の表面にFeとTiの合金膜を形成したことが記載されている。For example, Japanese Patent 2015-193899 (Patent Document 1), forming an alloy film of Fe and Ti on the surface of the Fe wire with a molten salt bath with the addition of K 2 TiF 6 or TiO 2 to KF-KCl It is stated that it was done.

特開2015−193899号公報Japanese Unexamined Patent Publication No. 2015-193899

本発明の一態様に係るチタンめっき液の製造方法は、フッ素及びチタンを含むチタンめっき液を下記の条件でサイクリックボルタンメトリーによって測定し、自然電位と、Ti3+/Ti4+反応電位との差が0.75V以上となるように、上記チタンめっき液にチタンを添加する、チタンめっき液の製造方法、である。
<条件>
チタンめっき液の温度を650℃以上、850℃以下とし、作用極にグラッシーカーボン、擬似参照極に白金、対極にチタンを使用した際の、作用極の浸漬電位を下限電位とし、そこからさらに2V以上、4V以下の貴な電位である上限電位との間で、作用極に対して電位走査を1mV/秒以上、500mV/秒以下のスキャン速度で、少なくとも5回繰り返す。
In the method for producing a titanium plating solution according to one aspect of the present invention, a titanium plating solution containing fluorine and titanium is measured by cyclic voltammetry under the following conditions, and the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is large. This is a method for producing a titanium plating solution, in which titanium is added to the titanium plating solution so that the voltage becomes 0.75 V or higher.
<Conditions>
When the temperature of the titanium plating solution is 650 ° C or higher and 850 ° C or lower, glassy carbon is used as the working electrode, platinum is used as the pseudo reference electrode, and titanium is used as the counter electrode, the immersion potential of the working electrode is set as the lower limit potential, and 2V is further increased from there. As mentioned above, the potential scanning with respect to the working electrode is repeated at least 5 times at a scanning speed of 1 mV / sec or more and 500 mV / sec or less with respect to the upper limit potential which is a noble potential of 4 V or less.

図1は、チタンめっき液をサイクリックボルタンメトリーによって測定した結果のイメージを表す概略図である。FIG. 1 is a schematic view showing an image of the result of measuring a titanium plating solution by cyclic voltammetry. 図2は、チタンめっき製品におけるチタンめっき膜の平均膜厚を測定する方法において、チタンめっき製品上にエリアA〜Eを定めた状態の一例を表す概略図である。FIG. 2 is a schematic view showing an example of a state in which areas A to E are defined on the titanium-plated product in a method of measuring the average film thickness of the titanium-plated film in the titanium-plated product. 図3は、図2に示すチタンめっき製品のエリアAを走査型電子顕微鏡で観察した場合の視野(i)の一例を表す概念図である。FIG. 3 is a conceptual diagram showing an example of the field of view (i) when the area A of the titanium-plated product shown in FIG. 2 is observed with a scanning electron microscope. 図4は、図2に示すチタンめっき製品のエリアAを走査型電子顕微鏡で観察した場合の視野(ii)の一例を表す概念図である。FIG. 4 is a conceptual diagram showing an example of a field of view (ii) when the area A of the titanium-plated product shown in FIG. 2 is observed with a scanning electron microscope. 図5は、図2に示すチタンめっき製品のエリアAを走査型電子顕微鏡で観察した場合の視野(iii)の一例を表す概念図である。FIG. 5 is a conceptual diagram showing an example of a field of view (iii) when the area A of the titanium-plated product shown in FIG. 2 is observed with a scanning electron microscope. 図6は、実施例4において作製したチタンめっき液No.4をサイクリックボルタンメトリーによって測定した結果を表す図である。FIG. 6 shows the titanium plating solution No. 2 prepared in Example 4. It is a figure which shows the result of having measured 4 by cyclic voltammetry. 図7は、比較例1において作製したチタンめっき液No.Aをサイクリックボルタンメトリーによって測定した結果を表す図である。FIG. 7 shows the titanium plating solution No. 1 prepared in Comparative Example 1. It is a figure which shows the result of having measured A by cyclic voltammetry.

[本開示が解決しようとする課題]
本発明者等が検討した結果、特許文献1に記載の方法では、溶融塩電解に用いたカソードの表面にFeとTiの合金膜を電析させることはできるが、金属チタン膜を電析させることはできなかった。すなわち、FeとTiの合金膜は溶融塩浴中で安定であるのに対し、金属Tiは均化反応によって溶融塩浴中に溶け出してしまっていた。
[Issues to be solved by this disclosure]
As a result of examination by the present inventors, the method described in Patent Document 1 can electrodeposit an alloy film of Fe and Ti on the surface of the cathode used for molten salt electrolysis, but electrodeposits a metallic titanium film. I couldn't. That is, while the alloy film of Fe and Ti is stable in the molten salt bath, the metal Ti has been dissolved in the molten salt bath by the leveling reaction.

このため本発明者等は更なる検討を重ね、KF、KCl及びKTiFを含む溶融塩からなるチタンめっき液に、Ti4+が下記式(A)で表される均化反応によりTi3+となるのに必要最低限な量を超える量のチタンを供給してから溶融塩電解をすることが有効であることを見出した。
式(A) 3Ti4+ + Ti金属 → 4Ti3+
Therefore, the present inventors have repeated further studies , and Ti 4+ is added to a titanium plating solution composed of a molten salt containing KF, KCl and K 2 TiF 6 by a leveling reaction represented by the following formula (A) to Ti 3+. It was found that it is effective to supply molten salt electrolysis after supplying an amount of titanium exceeding the minimum necessary amount.
Formula (A) 3Ti 4+ + Ti metal → 4Ti 3+ .

上記の方法によれば、溶融塩電解に用いたカソードの表面に平滑なチタンのめっき膜を形成することが可能である。 According to the above method, it is possible to form a smooth titanium plating film on the surface of the cathode used for molten salt electrolysis.

しかしながら、上記の方法だけでは、均化反応が十分に進行したかどうかを確認することができないため、チタンめっき液にチタンを供給してから溶融塩電解を行なうまで、必要以上に時間を空ける必要があった。また、何らかの原因によって外部環境からチタンめっき液中に酸素が混入するとチタンイオンが3価から4価に酸化されてしまうため、チタンめっき液中に3価のチタンイオンが十分に存在しているかどうかが分からなくなってしまう。 However, since it is not possible to confirm whether or not the leveling reaction has proceeded sufficiently by the above method alone, it is necessary to allow more time than necessary between supplying titanium to the titanium plating solution and performing molten salt electrolysis. was there. In addition, if oxygen is mixed into the titanium plating solution from the external environment for some reason, the titanium ions will be oxidized from trivalent to tetravalent, so whether or not the trivalent titanium ions are sufficiently present in the titanium plating solution. I don't understand.

そこで本発明は、上記問題点に鑑みて、チタンめっき液中のTi3+とTi4+の濃度比をモニタリングし、Ti3+の濃度が十分に高いチタンめっき液を製造する方法を提供することを目的とする。Therefore, in view of the above problems, it is an object of the present invention to provide a method for monitoring the concentration ratio of Ti 3+ and Ti 4+ in the titanium plating solution and producing a titanium plating solution having a sufficiently high concentration of Ti 3+. And.

[本開示の効果]
上記発明によれば、チタンめっき液中のTi3+とTi4+の濃度比をモニタリングし、Ti3+の濃度が十分に高いチタンめっき液を製造する方法を提供することができる。
[Effect of the present disclosure]
According to the above invention, it is possible to provide a method of monitoring the concentration ratio of Ti 3+ and Ti 4+ in a titanium plating solution and producing a titanium plating solution having a sufficiently high concentration of Ti 3+.

[本発明の実施形態の説明]
最初に本発明の実施態様を列記して説明する。
[Explanation of Embodiments of the Present Invention]
First, embodiments of the present invention will be listed and described.

(1)本発明の一態様に係るチタンめっき液の製造方法は、フッ素及びチタンを含むチタンめっき液を下記の条件でサイクリックボルタンメトリーによって測定し、自然電位と、Ti3+/Ti4+反応電位との差が0.75V以上となるように、上記チタンめっき液にチタンを添加する、チタンめっき液の製造方法、である。
<条件>
チタンめっき液の温度を650℃以上、850℃以下とし、作用極にグラッシーカーボン、擬似参照極に白金、対極にチタンを使用した際の、作用極の浸漬電位を下限電位とし、そこからさらに2V以上、4V以下の貴な電位である上限電位との間で、作用極に対して電位走査を1mV/秒以上、500mV/秒以下のスキャン速度で、少なくとも5回繰り返す。
(1) In the method for producing a titanium plating solution according to one aspect of the present invention, a titanium plating solution containing fluorine and titanium is measured by cyclic voltammetry under the following conditions, and the natural potential and Ti 3+ / Ti 4+ reaction potential are used. This is a method for producing a titanium plating solution, in which titanium is added to the titanium plating solution so that the difference between the two is 0.75 V or more.
<Conditions>
When the temperature of the titanium plating solution is 650 ° C or higher and 850 ° C or lower, glassy carbon is used as the working electrode, platinum is used as the pseudo reference electrode, and titanium is used as the counter electrode, the immersion potential of the working electrode is set as the lower limit potential, and 2V is further increased from there. As mentioned above, the potential scanning with respect to the working electrode is repeated at least 5 times at a scanning speed of 1 mV / sec or more and 500 mV / sec or less with respect to the upper limit potential which is a noble potential of 4 V or less.

上記(1)に記載の発明の態様によれば、チタンめっき液中のTi3+とTi4+の濃度比をモニタリングし、Ti3+の濃度が十分に高いチタンめっき液を製造する方法を提供することができる。According to the aspect of the invention described in (1) above, it is provided a method of monitoring the concentration ratio of Ti 3+ and Ti 4+ in the titanium plating solution and producing a titanium plating solution having a sufficiently high concentration of Ti 3+. Can be done.

(2)上記(1)に記載のチタンめっき液の製造方法は、上記チタンめっき液が、フッ化カリウムと塩化カリウムとの溶融塩にチタンが溶解したものであることが好ましい。 (2) In the method for producing the titanium plating solution according to (1) above, it is preferable that the titanium plating solution is obtained by dissolving titanium in a molten salt of potassium fluoride and potassium chloride.

(3)上記(1)又は上記(2)に記載のチタンめっき液の製造方法は、上記チタンめっき液が、フッ化カリウムと塩化カリウムとの溶融塩にKTiFが溶解したものであることが好ましい。(3) Production method (1) or titanium plating solution according to the above (2), said titanium plating solution, in which K 2 TiF 6 to a molten salt of potassium fluoride and potassium chloride were dissolved Is preferable.

上記(2)又は上記(3)に記載の発明の態様によれば、フッ化カリウムにチタンを溶解させたチタンめっき液よりも低温で液体状態を保てるチタンめっき液を提供することができる。 According to the aspect of the invention described in (2) or (3) above, it is possible to provide a titanium plating solution that can maintain a liquid state at a lower temperature than a titanium plating solution in which titanium is dissolved in potassium fluoride.

(4)上記(3)に記載のチタンめっき液の製造方法は、上記チタンめっき液において上記KTiFの含有率は、0.1mol%以上であることが好ましい。(4) In the method for producing a titanium plating solution according to (3) above, the content of K 2 TiF 6 in the titanium plating solution is preferably 0.1 mol% or more.

上記(4)に記載の発明の態様によれば、チタンめっきを安定して行なうことが可能なチタンめっき液を提供することができる。 According to the aspect of the invention described in (4) above, it is possible to provide a titanium plating solution capable of stably performing titanium plating.

(5)上記(2)から上記(4)のいずれか一項に記載のチタンめっき液の製造方法は、上記フッ化カリウムと上記塩化カリウムの混合比率は、モル比で10:90〜90:10であることが好ましい。 (5) In the method for producing a titanium plating solution according to any one of (2) to (4) above, the mixing ratio of potassium fluoride and potassium chloride is 10:90 to 90 in molar ratio. It is preferably 10.

上記(5)に記載の発明の態様によれば、平滑なチタンめっき膜を得ることが可能なチタンめっき液を提供することができる。 According to the aspect of the invention described in (5) above, it is possible to provide a titanium plating solution capable of obtaining a smooth titanium plating film.

(6)上記(1)から上記(5)のいずれか一項に記載のチタンめっき液の製造方法は、上記チタンめっき液に添加する上記チタンが、スポンジチタンであることが好ましい。 (6) In the method for producing a titanium plating solution according to any one of (1) to (5) above, it is preferable that the titanium added to the titanium plating solution is sponge titanium.

上記(6)に記載の発明の態様によれば、チタンめっき液中でチタンの均化反応を進行させやすくすることができる。 According to the aspect of the invention described in (6) above, it is possible to facilitate the progress of the titanium leveling reaction in the titanium plating solution.

なお、スポンジチタンとは、空隙率が1%以上の多孔質のチタン金属をいうものとする。ここで、スポンジチタンの空隙率(%)とは、100−(質量から算出される体積)/(見かけ上の体積)×100で算出される。 The sponge titanium refers to a porous titanium metal having a porosity of 1% or more. Here, the porosity (%) of titanium sponge is calculated by 100- (volume calculated from mass) / (apparent volume) × 100.

(7)本発明の一態様に係るチタンめっき製品の製造方法は、フッ素及びチタンを含むチタンめっき液中にカソードとアノードを設けて溶融塩電解を行なうことにより、上記カソードの表面にチタンを電析させる電解工程を有するチタンめっき製品の製造方法であって、上記チタンめっき液は、上記(1)から上記(6)のいずれか一項に記載のチタンめっき液の製造方法によって得られたチタンめっき液である、チタンめっき製品の製造方法である。 (7) In the method for producing a titanium-plated product according to one aspect of the present invention, titanium is electrolyzed on the surface of the cathode by providing a cathode and an anode in a titanium plating solution containing fluorine and titanium and performing molten salt electrolysis. A method for producing a titanium plating product having an electrolytic step of analysis, wherein the titanium plating solution is titanium obtained by the method for producing a titanium plating solution according to any one of (1) to (6) above. This is a method for manufacturing a titanium-plated product, which is a plating solution.

上記(7)に記載の発明の態様によれば、表面に平滑なチタンめっき膜を有するチタンめっき製品を製造することが可能な、チタンめっき製品の製造方法を提供することができる。 According to the aspect of the invention described in (7) above, it is possible to provide a method for producing a titanium-plated product capable of producing a titanium-plated product having a smooth titanium-plated film on the surface.

(8)上記(7)に記載のチタンめっき製品の製造方法は、上記電解工程において用いる上記チタンめっき液を下記の条件でサイクリックボルタンメトリーによって測定し、自然電位と、Ti3+/Ti4+反応電位との差が0.75V以上となるように制御することが好ましい。
<条件>
チタンめっき液の温度を650℃以上、850℃以下とし、作用極にグラッシーカーボン、擬似参照極に白金、対極にチタンを使用した際の、作用極の浸漬電位を下限電位とし、そこからさらに2V以上、4V以下の貴な電位である上限電位との間で、作用極に対して電位走査を1mV/秒以上、500mV/秒以下のスキャン速度で、少なくとも5回繰り返す。
(8) In the method for producing a titanium-plated product according to (7) above, the titanium plating solution used in the electrolysis step is measured by cyclic voltammetry under the following conditions, and the natural potential and Ti 3+ / Ti 4+ reaction potential are measured. It is preferable to control so that the difference from the above is 0.75 V or more.
<Conditions>
When the temperature of the titanium plating solution is 650 ° C or higher and 850 ° C or lower, glassy carbon is used as the working electrode, platinum is used as the pseudo reference electrode, and titanium is used as the counter electrode, the immersion potential of the working electrode is set as the lower limit potential, and 2V is further applied from there. Above, the potential scanning is repeated at least 5 times with respect to the working electrode at a scanning speed of 1 mV / sec or more and 500 mV / sec or less with respect to the upper limit potential which is a noble potential of 4 V or less.

上記(8)に記載の発明の態様によれば、表面に平滑なチタンめっき膜を有するチタンめっき製品を、連続して安定的に製造することが可能な、チタンめっき製品の製造方法を提供することができる。 According to the aspect of the invention described in (8) above, a method for producing a titanium-plated product capable of continuously and stably producing a titanium-plated product having a smooth titanium-plated film on the surface is provided. be able to.

[本発明の実施態様の詳細]
本発明の実施態様に係るチタンめっき液の製造方法及びチタンめっき製品の製造方法の具体例を、以下に、より詳細に説明する。なお、本発明はこれらの例示に限定されるものではなく、請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
[Details of Embodiments of the present invention]
Specific examples of the method for producing the titanium plating solution and the method for producing the titanium plating product according to the embodiment of the present invention will be described in more detail below. It should be noted that the present invention is not limited to these examples, and is indicated by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

<チタンめっき液の製造方法>
本発明の実施形態に係るチタンめっき液の製造方法においては、まず、フッ素及びチタンを含むチタンめっき液を用意する。そして、チタンめっき液をサイクリックボルタンメトリー(以下では「CV」と略記することもある)によって測定し、自然電位と、Ti3+/Ti4+反応電位との差が0.75V以上となるように、上記チタンめっき液にチタンを添加して溶解させればよい。
<Manufacturing method of titanium plating solution>
In the method for producing a titanium plating solution according to the embodiment of the present invention, first, a titanium plating solution containing fluorine and titanium is prepared. Then, the titanium plating solution is measured by cyclic voltammetry (hereinafter sometimes abbreviated as "CV") so that the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is 0.75V or more. Titanium may be added to the titanium plating solution to dissolve it.

CVの測定は、チタンとの化合物を形成しない非酸化性雰囲気で行えばよい。例えば、アルゴンガス等の不活性ガス雰囲気下で行えばよい。また、CVの測定は、チタンめっき液が液体状態を保てるように温度を650℃以上、850℃以下とし、電圧のスキャン速度を1mV/秒以上、500mV/秒以下程度として行えばよい。チタンめっき液の温度は、チタンめっき液の導電率の低下を抑制する観点から、650℃以上、800℃以下とすることがより好ましく、650℃以上、750℃以下とすることが更に好ましい。電位走査のスキャン速度は、測定時間の短縮や測定精度を高くする観点から、50mV/秒以上、300mV/秒以下とすることがより好ましく、100mV/秒以上、200mV/秒以下とすることが更に好ましい。 The CV may be measured in a non-oxidizing atmosphere that does not form a compound with titanium. For example, it may be carried out in an atmosphere of an inert gas such as argon gas. Further, the CV may be measured at a temperature of 650 ° C. or higher and 850 ° C. or lower so that the titanium plating solution can maintain a liquid state, and a voltage scanning speed of 1 mV / sec or higher and 500 mV / sec or lower. The temperature of the titanium plating solution is more preferably 650 ° C. or higher and 800 ° C. or lower, and further preferably 650 ° C. or higher and 750 ° C. or lower, from the viewpoint of suppressing a decrease in the conductivity of the titanium plating solution. From the viewpoint of shortening the measurement time and improving the measurement accuracy, the scanning speed of the potential scanning is more preferably 50 mV / sec or more and 300 mV / sec or less, and further preferably 100 mV / sec or more and 200 mV / sec or less. preferable.

作用極には、例えば、グラファイト、グラッシーカーボン等を用いることができる。
参照極には、例えば、白金、Ni等を用いることができる。
For the working electrode, for example, graphite, glassy carbon or the like can be used.
For the reference electrode, for example, platinum, Ni, or the like can be used.

対極には、例えば、チタン、グラッシーカーボン、グラファイト等を用いることができる。 For the counter electrode, for example, titanium, glassy carbon, graphite or the like can be used.

CVの測定は、作用極の浸漬電位を下限電位とし、そこからさらに2V以上、4V以下の貴な電位である上限電位として電位走査を少なくとも5回繰り返す。 In the measurement of CV, the immersion potential of the working electrode is set as the lower limit potential, and the potential scanning is repeated at least 5 times with the upper limit potential which is a noble potential of 2 V or more and 4 V or less.

図1に、チタンめっき液をCV測定した結果のイメージ図を表す。図1において、縦軸は電流値(mA)を、横軸は参照極の電位(V)を表す。 FIG. 1 shows an image of the result of CV measurement of the titanium plating solution. In FIG. 1, the vertical axis represents the current value (mA) and the horizontal axis represents the potential (V) of the reference electrode.

自然電位1とは、電流が流れていない状態での作用極−参照極間の電圧差をいうものとする。 The natural potential 1 refers to the voltage difference between the working electrode and the reference electrode when no current is flowing.

また、Ti3+/Ti4+反応電位4とは、Ti3+がTi4+に酸化されることに起因するピークの電位2と、Ti4+がTi3+に還元されることに起因するピークの電位3との中間の電位をいうものとする。Ti3+がTi4+に酸化されることに起因するピークの電位2とは、作用極に対して電位走査を少なくとも5回繰り返して測定される平均値をいうものとする。同様に、Ti4+がTi3+に還元されることに起因するピークの電位3とは、作用極に対して電位走査を少なくとも5回繰り返して測定される平均値をいうものとする。Further, the Ti 3+ / Ti 4+ reaction potentials are the peak potential 2 caused by the oxidation of Ti 3+ to Ti 4+ and the peak potential 3 caused by the reduction of Ti 4+ to Ti 3+. It shall mean the potential in the middle of. The potential potential 2 of the peak caused by the oxidation of Ti 3+ to Ti 4+ means an average value measured by repeating potential scanning at least 5 times with respect to the working electrode. Similarly, the peak potential 3 caused by the reduction of Ti 4+ to Ti 3+ means an average value measured by repeating potential scanning at least 5 times with respect to the working electrode.

自然電位1とTi3+/Ti4+反応電位4との差が0.75V以上のチタンめっき液においては、チタンめっき液中のTi3+の濃度が、Ti4+の濃度に比べて非常に多くなっている。このため、自然電位1とTi3+/Ti4+反応電位4との差が0.75V以上あるチタンめっき液を用いて溶融塩電解を行なうことで、カソードの表面に銀白色で平滑性の高いチタンめっき膜を形成することができる。一方、自然電位1とTi3+/Ti4+反応電位4との差が0.75V未満のチタンめっき液を用いて溶融塩電解を行なった場合には、カソード表面にチタンめっき膜を形成することができない。平滑なチタンめっき膜を形成する観点からは、自然電位1とTi3+/Ti4+反応電位4との差は、1.0V以上であることがより好ましく、1.1V以上であることが更に好ましい。In the titanium plating solution in which the difference between the natural potential 1 and Ti 3+ / Ti 4+ reaction potential 4 is 0.75 V or more, the concentration of Ti 3+ in the titanium plating solution becomes much higher than the concentration of Ti 4+. There is. Therefore, by performing molten salt electrolysis using a titanium plating solution having a difference between the natural potential 1 and Ti 3+ / Ti 4 + reaction potential 4 of 0.75 V or more, titanium having a silvery white color and high smoothness is formed on the surface of the cathode. A plating film can be formed. On the other hand, when molten salt electrolysis is performed using a titanium plating solution in which the difference between the natural potential 1 and Ti 3+ / Ti 4 + reaction potential 4 is less than 0.75 V, a titanium plating film may be formed on the cathode surface. Can not. From the viewpoint of forming a smooth titanium plating film, the difference between the natural potential 1 and the Ti 3+ / Ti 4 + reaction potential 4 is more preferably 1.0 V or more, and further preferably 1.1 V or more. ..

自然電位1とTi3+/Ti4+反応電位4との差が分かれば、下記式(B)で表されるネルンストの式を利用して、チタンめっき液中のTi3+の濃度とTi4+の濃度の比を算出することができる。If the difference between the natural potential 1 and the Ti 3+ / Ti 4+ reaction potential 4 is known, the concentration of Ti 3+ and the concentration of Ti 4+ in the titanium plating solution can be used by using the Nernst equation represented by the following equation (B). The ratio of can be calculated.

式(B) E=E−(RT/zF)ln(aTi3+/aTi4+
E :電極電位
:標準電極電位
R :気体定数
T :絶対温度
z :移動電子数
F :ファラデー定数
a :活量。
Equation (B) E = E 0 − (RT / zF) ln (a Ti3 + / a Ti4 + )
E: Electrode potential
E 0 : Standard electrode potential
R: Gas constant
T: Absolute temperature
z: Number of moving electrons
F: Faraday constant
a: Activity.

但し、ネルンストの式からTi3+の濃度とTi4+の濃度の比を算出するに際しては、式(B)における電極電位EはTi3+が酸化されてTi4+になる反応と、Ti4+が還元されてTi3+になる反応が支配的に影響すると仮定する。また、Ti3+の活量とTi4+の活量の比(Ti3+活量/Ti4+活量)はTi3+の濃度とTi4+の濃度の比(Ti3+濃度/Ti4+濃度)と同じであると仮定する。 However, when calculating the ratio of the concentration of Ti 3+ to the concentration of Ti 4+ from the Nernst equation, the electrode potential E in the equation (B) is the reaction in which Ti 3+ is oxidized to Ti 4+ and the Ti 4+ is reduced. It is assumed that the reaction that becomes Ti 3+ has a dominant effect. The ratio of activity of the Ti 4+ active amount of Ti 3+ (Ti 3+ activity / Ti 4+ activity) is the same as the ratio of the density of the density and Ti 4+ of Ti 3+ (Ti 3+ concentration / Ti 4+ concentration) Suppose there is.

CVによって測定する前のチタンめっき液は、フッ素及びチタンを含む溶融塩であればよい。例えば、KF−KClにKTiFを溶解させた溶融塩や、LiF−KClにKTiFを溶解させた溶融塩や、NaF−KClにKTiFを溶解させた溶融塩等を用いることができる。溶融塩に溶解させるチタン化合物はKTiFに限定されず、TiCl等であってもよい。これらのなかでもKF−KClにKTiFを溶解させた溶融塩を用いることが好ましい。KF−KClにKTiFを溶解させた溶融塩は、平滑なチタンめっき膜を得ることが可能なチタンめっき液である。The titanium plating solution before measurement by CV may be a molten salt containing fluorine and titanium. For example, molten salt or dissolving the K 2 TiF 6 to KF-KCl molten salt and dissolving the K 2 TiF 6 to LiF-KCl, the molten salt was dissolved K 2 TiF 6 to NaF-KCl etc. Can be used. The titanium compound to be dissolved in the molten salt is not limited to K 2 TiF 6, and may be TiCl 4 or the like. It is preferable to use a molten salt dissolving the K 2 TiF 6 to KF-KCl Of these. Molten salt dissolving the K 2 TiF 6 to KF-KCl is titanium plating solution capable of obtaining a smooth titanium plating film.

KF−KClを溶融塩に用いる場合には、KFとKClの混合比率はモル比で10:90〜90:10であることが好ましい。KF−KClにおいてKFの含有比率が10mol%以上であることにより、カソードの表面に平滑なチタンめっき膜を電析させることができる。また、KF−KClにおいてKFの含有比率が90mol%以下であることにより、KF単体の溶融塩よりも融点を下げることができる。これらの観点から、KFとKClの混合比率は、モル比で、20:80〜80:20であることがより好ましく、40:60〜60:40であることが更に好ましい。 When KF-KCl is used as a molten salt, the mixing ratio of KF and KCl is preferably 10:90 to 90:10 in terms of molar ratio. When the content ratio of KF in KF-KCl is 10 mol% or more, a smooth titanium plating film can be electrodeposited on the surface of the cathode. Further, when the content ratio of KF in KF-KCl is 90 mol% or less, the melting point can be lowered as compared with the molten salt of KF alone. From these viewpoints, the mixing ratio of KF and KCl is more preferably 20:80 to 80:20 and further preferably 40:60 to 60:40 in terms of molar ratio.

上記の溶融塩からなるチタンめっき液をCV測定した場合に、自然電位1とTi3+/Ti4+反応電位4との差が0.75V未満であるときは、チタンめっき液にチタンを添加して、自然電位1とTi3+/Ti4+反応電位4との差が0.75V以上となるようにすればよい。 When the difference between the natural potential 1 and Ti 3+ / Ti 4 + reaction potential 4 is less than 0.75V when the titanium plating solution composed of the above molten salt is measured by CV, titanium is added to the titanium plating solution. , The difference between the natural potential 1 and Ti 3+ / Ti 4 + reaction potential 4 may be 0.75 V or more.

チタンめっき液に添加するチタンの形状は特に限定されるものではないが、スポンジチタンや、なるべく細かくしたチタン粉末などを用いることが好ましい。スポンジチタンは空隙率が高いものほど比表面積が大きいため、溶融塩浴中に溶解させやすくなる。このため、空隙率が20%以上のスポンジチタンを用いることがより好ましく、空隙率が40%以上のスポンジチタンを用いることが更に好ましい。空隙率が高いスポンジチタンを用いることで、チタンめっき液中での均化反応を進行しやすくすることができる。 The shape of titanium added to the titanium plating solution is not particularly limited, but it is preferable to use sponge titanium, titanium powder as fine as possible, or the like. The higher the porosity of titanium sponge, the larger the specific surface area, so it is easier to dissolve it in a molten salt bath. Therefore, it is more preferable to use sponge titanium having a porosity of 20% or more, and it is further preferable to use sponge titanium having a porosity of 40% or more. By using sponge titanium having a high porosity, it is possible to facilitate the progress of the leveling reaction in the titanium plating solution.

本発明の実施形態に係るチタンめっき液の製造方法により得られるチタンめっき液を用いて溶融塩電解を行なうことで、膜厚分布が小さく平滑なチタンめっき膜を表面に有するチタンめっき製品を製造することができる。 By performing molten salt electrolysis using the titanium plating solution obtained by the method for producing a titanium plating solution according to the embodiment of the present invention, a titanium plating product having a smooth titanium plating film having a small film thickness distribution on the surface is produced. be able to.

<チタンめっき製品の製造方法>
本発明の実施形態に係るチタンめっき製品の製造方法は、上述の本発明の実施形態に係るチタンめっき液の製造方法によって得られたチタンめっき液中に、カソードとアノードを設けて溶融塩電解を行ない、上記カソードの表面にチタンを電析させる電解工程を有する。
<Manufacturing method of titanium-plated products>
In the method for producing a titanium-plated product according to an embodiment of the present invention, a cathode and an anode are provided in the titanium-plated solution obtained by the above-mentioned method for producing a titanium-plated solution according to the embodiment of the present invention, and molten salt electrolysis is performed. It has an electrolysis step of electrodepositing titanium on the surface of the cathode.

(カソード)
電解工程においてはカソードの表面にチタンめっき膜が形成される。このためカソードとしては、表面にチタンめっき膜を形成する用途のある材料を用いればよい。例えば、金属や、導電性の焼結体などが挙げられる。具体的には、ニッケルや、鉄、SUS304、モリブデン、タングステン、銅、カーボンなどを好ましく用いることができる。
(Cathode)
In the electrolysis process, a titanium plating film is formed on the surface of the cathode. Therefore, as the cathode, a material having a purpose of forming a titanium plating film on the surface may be used. For example, a metal, a conductive sintered body, and the like can be mentioned. Specifically, nickel, iron, SUS304, molybdenum, tungsten, copper, carbon and the like can be preferably used.

カソードとして用いる基材は少なくとも表面が導電性であればよい。チタンと合金化する材料をカソードとして用いることで、チタンめっき膜のカソード側にチタン合金層を形成することができる。また、チタン合金層を形成せずに純度の高いチタンめっき膜を形成する場合には、チタンめっき液中においてチタンと合金化しない材料をカソードとして用いればよい。 The base material used as the cathode may have at least a conductive surface. By using a material that alloys with titanium as the cathode, a titanium alloy layer can be formed on the cathode side of the titanium plating film. Further, in the case of forming a high-purity titanium plating film without forming a titanium alloy layer, a material that does not alloy with titanium in the titanium plating solution may be used as the cathode.

(アノード)
アノードは導電性の材料であれば特に限定されるものではなく、例えば、グラッシーカーボン、チタン等を用いることができる。チタンめっき膜を安定的に連続的に製造する観点からは、チタンをアノードに用いることが好ましい。
(anode)
The anode is not particularly limited as long as it is a conductive material, and for example, glassy carbon, titanium, or the like can be used. From the viewpoint of stably and continuously producing a titanium plating film, it is preferable to use titanium as an anode.

(その他の条件)
溶融塩電解を行なう雰囲気はチタンとの化合物を形成しない非酸化性雰囲気もしくは真空とすればよい。例えば、グローブボックス内にアルゴンガス等の不活性ガスを満たす、あるいは循環させた状態で溶融塩電解を行なえばよい。
(Other conditions)
The atmosphere for performing molten salt electrolysis may be a non-oxidizing atmosphere that does not form a compound with titanium or a vacuum. For example, the molten salt electrolysis may be performed in a state where the glove box is filled with an inert gas such as argon gas or circulated.

溶融塩電解を行なう電流密度は特に限定されるものではないが、例えば、10mA/cm以上、500mA/cm以下とすればよい。電流密度を10mA/cm以上とすることにより、カソードの表面に安定してチタンめっき膜を形成することができる。また、電流密度を500mA/cm以下とすることにより、チタンめっき液中のチタンイオンの拡散が律速にはならず、形成されるチタンめっき膜が黒色化することを抑制することができる。これらの観点から、電流密度は、50mA/cm以上、250mA/cm以下とすることがより好ましく、100mA/cm以上、200mA/cm以下とすることが更に好ましい。The current density for performing molten salt electrolysis is not particularly limited, but may be, for example, 10 mA / cm 2 or more and 500 mA / cm 2 or less. By setting the current density to 10 mA / cm 2 or more, a titanium plating film can be stably formed on the surface of the cathode. Further, by setting the current density to 500 mA / cm 2 or less, the diffusion of titanium ions in the titanium plating solution does not become rate-determining, and it is possible to suppress blackening of the formed titanium plating film. From these viewpoints, the current density, 50 mA / cm 2 or more, more preferably, to 250 mA / cm 2 or less, 100 mA / cm 2 or more and more preferably be 200 mA / cm 2 or less.

電解工程においてチタンめっき液の温度は、650℃以上、850℃以下とすることが好ましい。チタンめっき液の温度を650℃以上とすることによりチタンめっき液を液状に保ち、安定して溶融塩電解を行なうことができる。また、チタンめっき液の温度を850℃以下とすることにより、チタンめっき液の成分が蒸発してチタンめっき液が不安定になることを抑制することができる。これらの観点から、チタンめっき液の温度は、650℃以上、750℃以下とすることがより好ましく、650℃以上、700℃以下とすることが更に好ましい。 In the electrolysis step, the temperature of the titanium plating solution is preferably 650 ° C. or higher and 850 ° C. or lower. By setting the temperature of the titanium plating solution to 650 ° C. or higher, the titanium plating solution can be kept in a liquid state and molten salt electrolysis can be stably performed. Further, by setting the temperature of the titanium plating solution to 850 ° C. or lower, it is possible to prevent the components of the titanium plating solution from evaporating and the titanium plating solution from becoming unstable. From these viewpoints, the temperature of the titanium plating solution is more preferably 650 ° C. or higher and 750 ° C. or lower, and further preferably 650 ° C. or higher and 700 ° C. or lower.

溶融塩電解を行なう時間は特に限定されるものではなく、カソードの表面に目的となるチタンめっき膜が十分に形成される時間行なえばよい。 The time for performing the molten salt electrolysis is not particularly limited, and the time may be sufficient for the target titanium plating film to be sufficiently formed on the surface of the cathode.

(電解工程におけるCV測定)
電解工程においては、定期的又は不定期にチタンめっき液をサイクリックボルタンメトリーによって測定し、自然電位とTi3+/Ti4+反応電位との差が0.75V以上となるように制御することが好ましい。
(CV measurement in electrolysis process)
In the electrolysis step, it is preferable to measure the titanium plating solution periodically or irregularly by cyclic voltammetry and control the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential to be 0.75 V or more.

電解工程を行っている最中に、何らかの原因により外部環境からチタンめっき液中に酸素や水が混入するとチタンイオンが3価から4価に酸化されてしまい、平滑なチタンめっき膜を形成できなくなってしまう。また、アノードにチタン電極以外の電極を用いた場合には、チタンめっき液中のチタンイオンの濃度は随時変化する。 If oxygen or water is mixed into the titanium plating solution from the external environment during the electrolysis process for some reason, the titanium ions will be oxidized from trivalent to tetravalent, making it impossible to form a smooth titanium plating film. It ends up. When an electrode other than the titanium electrode is used as the anode, the concentration of titanium ions in the titanium plating solution changes at any time.

これらのような場合にも、チタンめっき液を定期的又は不定期にCV測定して自然電位とTi3+/Ti4+反応電位との差が0.75V以上となるように制御することで、カソードの表面に安定して連続的に平滑なチタンめっき膜を形成することができる。Even in these cases, the titanium plating solution is measured by CV regularly or irregularly and controlled so that the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is 0.75V or more. A stable and continuously smooth titanium plating film can be formed on the surface of the surface.

CV測定の条件は、上述の本発明の実施形態に係るチタンめっき液の製造方法におけるCV測定の条件と同様である。また、チタンめっき液をCV測定した際に自然電位とTi3+/Ti4+反応電位との差が0.75V未満だった場合には、0.75V以上となるまで、例えば、スポンジチタン等をチタンめっき液に添加して溶解させればよい。The conditions for CV measurement are the same as the conditions for CV measurement in the method for producing a titanium plating solution according to the embodiment of the present invention described above. If the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is less than 0.75V when the titanium plating solution is CV-measured, for example, titanium sponge titanium or the like is used until it becomes 0.75V or more. It may be added to the plating solution to dissolve it.

本発明の実施形態に係るチタンめっき製品の製造方法によれば、膜厚分布が小さく平滑なチタンめっき膜を表面に有するチタンめっき製品を製造することができる。膜厚分布が小さく平滑なチタンめっき膜とは、チタンめっき製品の任意の5箇所において測定されるチタンめっき膜の最大厚みと最小厚みの全てが、チタンめっき膜の平均膜厚の±50%以内にあることをいうものとする。 According to the method for manufacturing a titanium-plated product according to the embodiment of the present invention, it is possible to manufacture a titanium-plated product having a smooth titanium-plated film having a small film thickness distribution on the surface. A smooth titanium plating film with a small film thickness distribution means that all of the maximum and minimum thicknesses of the titanium plating film measured at any five points of the titanium plating product are within ± 50% of the average film thickness of the titanium plating film. It shall be said that it is in.

チタンめっき膜の平均膜厚とは、以下のようにして測定されるものをいうものとする。平均膜厚の測定方法の概略を図2に示す。 The average film thickness of the titanium plating film is measured as follows. The outline of the method for measuring the average film thickness is shown in FIG.

まず、チタンめっき膜を表面に有するチタンめっき製品を任意に偏りなくエリア分けし、測定箇所として5箇所(エリアA〜エリアE)を選択する。そして、走査型電子顕微鏡(SEM)によって各エリアにおけるチタンめっき膜の断面を観察する。SEMの倍率は、チタンめっき膜の厚み方向の全体が確認でき、かつ、出来る限り一視野内で厚み方向が大きく見えるように設定する。そして、視野を変えて各エリアにおいて3箇所ずつチタンめっき膜の最大厚みと最小厚みを測定し、その平均をチタンめっき膜の平均膜厚という。 First, a titanium-plated product having a titanium-plated film on its surface is arbitrarily divided into areas without bias, and five measurement points (areas A to E) are selected. Then, the cross section of the titanium plating film in each area is observed with a scanning electron microscope (SEM). The SEM magnification is set so that the entire thickness direction of the titanium plating film can be confirmed and the thickness direction can be seen as large as possible within one field of view. Then, the maximum thickness and the minimum thickness of the titanium plating film are measured at three points in each area by changing the field of view, and the average is called the average film thickness of the titanium plating film.

例として、図2に、略正方形の基材の表面にチタンめっき膜を有するチタンめっき製品21について、四隅をエリアA〜エリアDとし、中央部をエリアEとした場合の概略図を示す。また、図3には、図2に示すチタンめっき製品21のエリアAをSEMによって観察した場合の視野(i)の概念図を示す。同様に、図4にはエリアAの視野(ii)の概念図を、図5にはエリアAの視野(iii)の概念図を示す。 As an example, FIG. 2 shows a schematic view of a titanium-plated product 21 having a titanium-plated film on the surface of a substantially square base material, when the four corners are areas A to D and the central portion is area E. Further, FIG. 3 shows a conceptual diagram of the field of view (i) when the area A of the titanium-plated product 21 shown in FIG. 2 is observed by SEM. Similarly, FIG. 4 shows a conceptual diagram of the field of view (iii) of area A, and FIG. 5 shows a conceptual diagram of the field of view (iii) of area A.

チタンめっき製品21のエリアAをSEMで観察した場合の視野(i)〜視野(iii)において、チタンめっき膜23が最大となる厚み(最大厚みA(i)、最大厚みA(ii)、最大厚みA(iii))と、チタンめっき膜23が最小となる厚み(最小厚みa(i)、最小厚みa(ii)、最小厚みa(iii))を測定する。チタンめっき膜23の厚みとは、基材22から垂直方向に伸びるチタンめっき膜23の長さをいうものとする。なお、チタンめっき膜23と基材22との間にチタンと基材金属によるチタン合金層が形成されている場合には、チタンめっき膜23の厚みとは、基材22から垂直方向に伸びるチタン合金層とチタンめっき膜の長さの合計をいうものとする。これにより、エリアAにおいて3箇所の視野の最大厚みA(i)〜最大厚みA(iii)と、最小厚みa(i)〜最小厚みa(iii)が決定する。エリアB、C、D、EについてもエリアAと同様にして、3箇所の視野におけるチタンめっき膜の最大厚みと最小厚みを測定する。 In the field of view (i) to the field of view (iii) when the area A of the titanium-plated product 21 is observed by SEM, the thickness at which the titanium-plated film 23 is maximum (maximum thickness A (i), maximum thickness A (ii), maximum). The thickness A (iii)) and the thickness at which the titanium plating film 23 is minimized (minimum thickness a (i), minimum thickness a (ii), minimum thickness a (iii)) are measured. The thickness of the titanium plating film 23 means the length of the titanium plating film 23 extending in the vertical direction from the base material 22. When a titanium alloy layer made of titanium and a base metal is formed between the titanium plating film 23 and the base material 22, the thickness of the titanium plating film 23 is the titanium extending in the direction perpendicular to the base material 22. It shall mean the total length of the alloy layer and the titanium plating film. As a result, the maximum thickness A (i) to the maximum thickness A (iii) and the minimum thickness a (i) to the minimum thickness a (iii) of the three visual fields in the area A are determined. For areas B, C, D, and E, the maximum and minimum thicknesses of the titanium plating film in the three visual fields are measured in the same manner as in area A.

以上のようにして測定されたチタンめっき膜の最大厚みA(i)〜最大厚みE(iii)と、最小厚みa(i)〜最小厚みe(iii)の平均をチタンめっき膜の平均膜厚という。 The average of the maximum thickness A (i) to the maximum thickness E (iii) and the minimum thickness a (i) to the minimum thickness e (iii) of the titanium plating film measured as described above is the average thickness of the titanium plating film. That is.

以下、実施例に基づいて本発明をより詳細に説明するが、これらの実施例は例示であって、本発明のチタンめっき液の製造方法及びチタンめっき製品の製造方法はこれらに限定されるものではない。本発明の範囲は請求の範囲の記載によって示され、請求の範囲の記載と均等の意味および範囲内でのすべての変更が含まれる。 Hereinafter, the present invention will be described in more detail based on Examples, but these Examples are examples, and the method for producing a titanium plating solution and the method for producing a titanium-plated product of the present invention are limited thereto. is not it. The scope of the present invention is indicated by the description of the claims and includes all modifications within the meaning and scope equivalent to the description of the claims.

(実施例1)
−チタンめっき液の製造−
KClとKFの混合比率がモル比で55:45となり、KTiFの濃度が0.1mol%となるようにKCl、KF及びKTiFを混合して650℃に加熱し、チタンめっき液を作製した。
(Example 1)
-Manufacturing of titanium plating solution-
KCl and mixing ratio of 55: 45 next in a molar ratio of KF, so that the concentration of K 2 TiF 6 is 0.1 mol% KCl, a mixture of KF and K 2 TiF 6 was heated to 650 ° C., titanium plating A liquid was prepared.

得られたチタンめっき液を650℃に加熱したまま、アルゴンガスを循環させた雰囲気下で、電圧のスキャン速度を200mV/秒としてCV測定した。作用極には直径3mmのグラファイト棒を、参照極には直径1mmの白金線を、対極には直径3mmのチタン棒を用いた。作用極に対する電位走査は5回繰り返した。 The CV measurement was performed at a voltage scanning speed of 200 mV / sec in an atmosphere in which argon gas was circulated while the obtained titanium plating solution was heated to 650 ° C. A graphite rod having a diameter of 3 mm was used as the working electrode, a platinum wire having a diameter of 1 mm was used as the reference electrode, and a titanium rod having a diameter of 3 mm was used as the counter electrode. The potential scan for the working electrode was repeated 5 times.

CV測定した結果、チタンめっき液の自然電位とTi3+/Ti4+反応電位との差は0.65Vであった。As a result of CV measurement, the difference between the natural potential of the titanium plating solution and the Ti 3+ / Ti 4+ reaction potential was 0.65V.

このため、チタンめっき液1gあたりに対し0.3mgのスポンジチタンを添加し、十分に溶解させた。スポンジチタンとしては、空隙率が50%のものを用いた。 Therefore, 0.3 mg of sponge titanium was added per 1 g of the titanium plating solution and sufficiently dissolved. As the titanium sponge, one having a porosity of 50% was used.

再度、同条件にてチタンめっき液をCV測定した結果、自然電位とTi3+/Ti4+反応電位との差は0.75Vであった。このチタンめっき液を、チタンめっき液No.1とした。As a result of CV measurement of the titanium plating solution again under the same conditions , the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential was 0.75V. This titanium plating solution is referred to as titanium plating solution No. It was set to 1.

−チタンめっき製品の製造−
チタンめっき液No.1にカソードとアノードを設けて、40分間、溶融塩電解を行った。
-Manufacturing of titanium-plated products-
Titanium plating solution No. A cathode and an anode were provided in No. 1, and molten salt electrolysis was performed for 40 minutes.

溶融塩電解はアルゴンフロー雰囲気のグローブボックス内で行なった。カソードとして0.5cm×2.5cm×0.1mmのNi板を、アノードとしてチタン棒を用いた。また、擬似参照極としては白金線を用いた。電流密度は25mA/cmとなるようにした。なお、擬似参照極の電位は、白金線上に電気化学的に析出させた金属カリウムの電位(K/K電位)で較正した。Molten salt electrolysis was performed in a glove box with an argon flow atmosphere. A 0.5 cm × 2.5 cm × 0.1 mm Ni plate was used as the cathode, and a titanium rod was used as the anode. A platinum wire was used as the pseudo reference electrode. The current density was set to 25 mA / cm 2 . The potential of the pseudo-reference electrode was calibrated with the potential of metallic potassium (K + / K potential) electrochemically deposited on the platinum wire.

その結果、カソードのNi板の表面にチタンが電析し、表面にチタンめっき膜を有するチタンめっき製品を得ることができた。 As a result, titanium was electrodeposited on the surface of the Ni plate of the cathode, and a titanium-plated product having a titanium-plated film on the surface could be obtained.

溶融塩電解工程後にチタンめっき製品を水洗した。チタンめっき製品の表面に付着した塩は水への溶解性に優れており、容易に除去することができた。以上の操作により、表面にチタンめっき膜を有するチタンめっき製品No.1を得た。 The titanium-plated product was washed with water after the molten salt electrolysis step. The salt adhering to the surface of the titanium-plated product had excellent solubility in water and could be easily removed. By the above operation, the titanium plating product No. which has a titanium plating film on the surface. I got 1.

(実施例2)
−チタンめっき液の製造−
実施例1において、CV測定後にチタンめっき液に添加するスポンジチタンの量を、チタンめっき液1gあたりに対し0.5mgとした以外は実施例1と同様にしてチタンめっき液No.2を作製した。スポンジチタンを添加した後のチタンめっき液No.2を実施例1と同条件にてCV測定した結果、自然電位とTi3+/Ti4+反応電位との差は0.85Vであった。
(Example 2)
-Manufacturing of titanium plating solution-
In Example 1, the titanium plating solution No. 1 was the same as in Example 1 except that the amount of titanium sponge added to the titanium plating solution after the CV measurement was 0.5 mg per 1 g of the titanium plating solution. 2 was prepared. Titanium plating solution No. after adding titanium sponge. As a result of CV measurement of No. 2 under the same conditions as in Example 1 , the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential was 0.85 V.

−チタンめっき製品の製造−
実施例1において、チタンめっき液No.1に替えてチタンめっき液No.2を用いた以外は実施例1と同様にしてチタンめっき製品No.2を得た。
-Manufacturing of titanium-plated products-
In Example 1, the titanium plating solution No. Instead of 1, titanium plating solution No. Titanium-plated product No. 2 was used in the same manner as in Example 1 except that 2. I got 2.

(実施例3)
−チタンめっき液の製造−
実施例1において、CV測定後にチタンめっき液に添加するスポンジチタンの量を、チタンめっき液1gあたりに対し1mgとした以外は実施例1と同様にしてチタンめっき液No.3を作製した。スポンジチタンを添加した後のチタンめっき液No.3を実施例1と同条件にてCV測定した結果、自然電位とTi3+/Ti4+反応電位との差は1.00Vであった。
(Example 3)
-Manufacturing of titanium plating solution-
In Example 1, the titanium plating solution No. 1 was the same as in Example 1 except that the amount of sponge titanium added to the titanium plating solution after CV measurement was 1 mg per 1 g of the titanium plating solution. 3 was prepared. Titanium plating solution No. after adding titanium sponge. As a result of CV measurement of No. 3 under the same conditions as in Example 1 , the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential was 1.00V.

−チタンめっき製品の製造−
実施例1において、チタンめっき液No.1に替えてチタンめっき液No.3を用いた以外は実施例1と同様にしてチタンめっき製品No.3を得た。
-Manufacturing of titanium-plated products-
In Example 1, the titanium plating solution No. Instead of 1, titanium plating solution No. Titanium-plated product No. 3 was used in the same manner as in Example 1 except that No. 3 was used. I got 3.

(実施例4)
−チタンめっき液の製造−
実施例1において、CV測定後にチタンめっき液に添加するスポンジチタンの量を、チタンめっき液1gあたりに対し1.2mgとした以外は実施例1と同様にしてチタンめっき液No.4を作製した。スポンジチタンを添加した後のチタンめっき液No.4を実施例1と同条件にてCV測定した結果、自然電位とTi3+/Ti4+反応電位との差は1.10Vであった。
(Example 4)
-Manufacturing of titanium plating solution-
In Example 1, the titanium plating solution No. 1 was the same as in Example 1 except that the amount of titanium sponge added to the titanium plating solution after the CV measurement was 1.2 mg per 1 g of the titanium plating solution. 4 was prepared. Titanium plating solution No. after adding titanium sponge. As a result of CV measurement of No. 4 under the same conditions as in Example 1 , the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential was 1.10 V.

図6にチタンめっき液No.4をCV測定した結果(5回目の電位走査の結果)を表す。図6では、縦軸に電流値(mA)を、横軸に参照電極の電位(V)を表す。 FIG. 6 shows the titanium plating solution No. 4 represents the result of CV measurement (result of the fifth potential scan). In FIG. 6, the vertical axis represents the current value (mA) and the horizontal axis represents the potential (V) of the reference electrode.

−チタンめっき製品の製造−
実施例1において、チタンめっき液No.1に替えてチタンめっき液No.4を用いた以外は実施例1と同様にしてチタンめっき製品No.4を得た。
-Manufacturing of titanium-plated products-
In Example 1, the titanium plating solution No. Instead of 1, titanium plating solution No. Titanium-plated product No. 4 was used in the same manner as in Example 1 except that No. 4 was used. I got 4.

(比較例1)
−チタンめっき液の製造−
実施例1において、CV測定後にチタンめっき液にスポンジチタンを添加しなかった以外は実施例1と同様にしてチタンめっき液No.Aを作製した。チタンめっき液No.Aを実施例1と同条件にてCV測定した結果、自然電位とTi3+/Ti4+反応電位との差は0.67Vであった。図7にチタンめっき液No.AをCV測定した結果(5回目の電位走査の結果)を表す。図7では、縦軸に電流値(mA)を、横軸に参照電極の電位(V)を表す。
(Comparative Example 1)
-Manufacturing of titanium plating solution-
In Example 1, the titanium plating solution No. 1 was the same as in Example 1 except that sponge titanium was not added to the titanium plating solution after the CV measurement. A was prepared. Titanium plating solution No. As a result of CV measurement of A under the same conditions as in Example 1 , the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential was 0.67V. FIG. 7 shows the titanium plating solution No. The result of CV measurement of A (the result of the fifth potential scan) is shown. In FIG. 7, the vertical axis represents the current value (mA) and the horizontal axis represents the potential (V) of the reference electrode.

−チタンめっき製品の製造−
実施例1において、チタンめっき液No.1に替えてチタンめっき液No.Aを用いた以外は実施例1と同様にしてチタンめっき製品No.Aを得た。
-Manufacturing of titanium-plated products-
In Example 1, the titanium plating solution No. Instead of 1, titanium plating solution No. Titanium-plated product No. 1 was used in the same manner as in Example 1 except that A was used. I got A.

(比較例2)
−チタンめっき液の製造−
実施例1において、CV測定後にチタンめっき液に添加するスポンジチタンの量を、チタンめっき液1gあたりに対し0.2mgとした以外は実施例1と同様にしてチタンめっき液No.Bを作製した。スポンジチタンを添加した後のチタンめっき液No.Bを実施例1と同条件にてCV測定した結果、自然電位とTi3+/Ti4+反応電位との差は0.70Vであった。
(Comparative Example 2)
-Manufacturing of titanium plating solution-
In Example 1, the titanium plating solution No. 1 was the same as in Example 1 except that the amount of titanium sponge added to the titanium plating solution after the CV measurement was 0.2 mg per 1 g of the titanium plating solution. B was prepared. Titanium plating solution No. after adding titanium sponge. As a result of CV measurement of B under the same conditions as in Example 1 , the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential was 0.70 V.

−チタンめっき製品の製造−
実施例1において、チタンめっき液No.1に替えてチタンめっき液No.Bを用いた以外は実施例1と同様にしてチタンめっき製品No.Bを得た。
-Manufacturing of titanium-plated products-
In Example 1, the titanium plating solution No. Instead of 1, titanium plating solution No. Titanium-plated product No. 1 was used in the same manner as in Example 1 except that B was used. I got B.

<評価>
実施例1〜実施例4、比較例1、比較例2によって得られたチタンめっき液No.1〜No.4、チタンめっき液No.A、No.BにおけるTi3+の濃度とTi4+の濃度の比(Ti3+濃度/Ti4+濃度)をネルンストの式に基づいて計算した。その結果を表1に表す。
<Evaluation>
Titanium plating solution No. obtained by Examples 1 to 4, Comparative Example 1 and Comparative Example 2. 1-No. 4. Titanium plating solution No. A, No. The ratio of the Ti 3+ concentration to the Ti 4+ concentration in B (Ti 3+ concentration / Ti 4+ concentration) was calculated based on the Nernst equation. The results are shown in Table 1.

また、実施例1〜実施例4、比較例1、比較例2によって得られたチタンめっき製品No.1〜No.4、チタンめっき製品No.A、No.Bのチタンめっき膜の表面の状態を目視により観察した。その結果を表1に表す。 Further, the titanium-plated product No. 1 obtained in Examples 1 to 4, Comparative Example 1 and Comparative Example 2 were obtained. 1-No. 4. Titanium plated product No. A, No. The state of the surface of the titanium plating film of B was visually observed. The results are shown in Table 1.

実施例1〜実施例4、比較例1、比較例2の電解工程におけるカソードの電流効率を下記の式(C)に基づいて算出した。その結果を表1に表す。
式(C) 電流効率(%)=(実際のめっき量)/(理論上のめっき量)×100
The current efficiency of the cathode in the electrolysis steps of Examples 1 to 4, Comparative Example 1 and Comparative Example 2 was calculated based on the following formula (C). The results are shown in Table 1.
Equation (C) Current efficiency (%) = (actual plating amount) / (theoretical plating amount) x 100

Figure 0006889447
Figure 0006889447

表1に示すように、自然電位とTi3+/Ti4+反応電位との差が0.75V以上であるチタンめっき液No.1〜No.4を用いて溶融塩電解を行なった場合には、チタンめっき膜の表面の状態が銀箔色で平滑なチタンめっき製品No.1〜No.4を得ることができた。特に、自然電位とTi3+/Ti4+反応電位との差が1.00V以上であるチタンめっき液No.3、No.4を用いた場合には、カソードの電流効率を90%以上にすることができた。As shown in Table 1, the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is 0.75 V or more. 1-No. When molten salt electrolysis was performed using No. 4, the surface condition of the titanium plating film was silver foil color and smooth, and the titanium plating product No. 1-No. I was able to get 4. In particular, the titanium plating solution No. 1 in which the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is 1.00 V or more. 3, No. When 4 was used, the current efficiency of the cathode could be 90% or more.

一方、自然電位とTi3+/Ti4+反応電位との差が0.75V未満であるチタンめっき液No.A、No.Bを用いて溶融塩電解を行なった場合には、カソード表面にうまくチタンめっき膜を形成することができず、黒色の膜が電析していた。On the other hand, the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is less than 0.75 V. A, No. When molten salt electrolysis was performed using B, the titanium plating film could not be formed well on the cathode surface, and the black film was electrodeposited.

1 自然電位、2 Ti3+がTi4+に酸化されることに起因するピークの電位、3 Ti4+がTi3+に還元されることに起因するピークの電位、4 Ti3+/Ti4+反応電位、A チタンめっき製品上の任意のエリア、B チタンめっき製品上の任意のエリア、C チタンめっき製品上の任意のエリア、D チタンめっき製品上の任意のエリア、E チタンめっき製品上の任意のエリア、21 チタンめっき製品、22 基材、23 チタンめっき膜、61 自然電位、64 Ti3+/Ti4+反応電位、71 自然電位、74 Ti3+/Ti4+反応電位。1 Natural potential, 2 Peak potential due to oxidation of Ti 3+ to Ti 4+ , 3 Peak potential due to reduction of Ti 4+ to Ti 3+ , 4 Ti 3+ / Ti 4+ reaction potential, A Any area on titanium plated product, B Any area on titanium plated product, C Any area on titanium plated product, D Any area on titanium plated product, E Any area on titanium plated product, 21 Titanium plating products, 22 base materials, 23 titanium plating films, 61 natural potentials, 64 Ti 3+ / Ti 4+ reaction potentials, 71 natural potentials, 74 Ti 3+ / Ti 4+ reaction potentials.

Claims (8)

フッ素及びチタンを含むチタンめっき液を下記の条件でサイクリックボルタンメトリーによって測定し、
自然電位と、Ti3+/Ti4+反応電位との差が0.75V以上となるように、前記チタンめっき液にチタンを添加する、チタンめっき液の製造方法。
<条件>
チタンめっき液の温度を650℃以上、850℃以下とし、作用極にグラッシーカーボン、擬似参照極に白金、対極にチタンを使用した際の、作用極の浸漬電位を下限電位とし、そこからさらに2V以上、4V以下の貴な電位である上限電位との間で、作用極に対して電位走査を1mV/秒以上、500mV/秒以下のスキャン速度で、少なくとも5回繰り返す。
A titanium plating solution containing fluorine and titanium was measured by cyclic voltammetry under the following conditions.
A method for producing a titanium plating solution, in which titanium is added to the titanium plating solution so that the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is 0.75 V or more.
<Conditions>
When the temperature of the titanium plating solution is 650 ° C or higher and 850 ° C or lower, glassy carbon is used as the working electrode, platinum is used as the pseudo reference electrode, and titanium is used as the counter electrode, the immersion potential of the working electrode is set as the lower limit potential, and 2V is further increased from there. Above, potential scanning is repeated at least 5 times with respect to the working electrode at a scanning speed of 1 mV / sec or more and 500 mV / sec or less with respect to the upper limit potential which is a noble potential of 4 V or less.
前記チタンめっき液は、フッ化カリウムと塩化カリウムとの溶融塩にチタンが溶解したものである、請求項1に記載のチタンめっき液の製造方法。 The method for producing a titanium plating solution according to claim 1, wherein the titanium plating solution is obtained by dissolving titanium in a molten salt of potassium fluoride and potassium chloride. 前記チタンめっき液は、フッ化カリウムと塩化カリウムとの溶融塩にKTiFが溶解したものである、請求項1又は請求項2に記載のチタンめっき液の製造方法。The titanium plating solution is obtained by dissolving the K 2 TiF 6 to a molten salt of potassium fluoride and potassium chloride, producing a titanium plating solution according to claim 1 or claim 2. 前記チタンめっき液において前記KTiFの含有率は、0.1mol%以上である、請求項3に記載のチタンめっき液の製造方法。The method for producing a titanium plating solution according to claim 3 , wherein the content of K 2 TiF 6 in the titanium plating solution is 0.1 mol% or more. 前記フッ化カリウムと前記塩化カリウムの混合比率は、モル比で10:90〜90:10である、請求項2から請求項4のいずれか一項に記載のチタンめっき液の製造方法。 The method for producing a titanium plating solution according to any one of claims 2 to 4, wherein the mixing ratio of potassium fluoride and potassium chloride is 10:90 to 90:10 in terms of molar ratio. 前記チタンめっき液に添加する前記チタンは、スポンジチタンである、請求項1から請求項5のいずれか一項に記載のチタンめっき液の製造方法。 The method for producing a titanium plating solution according to any one of claims 1 to 5, wherein the titanium added to the titanium plating solution is titanium sponge. フッ素及びチタンを含むチタンめっき液中にカソードとアノードを設けて溶融塩電解を行なうことにより、前記カソードの表面にチタンを電析させる電解工程を有するチタンめっき製品の製造方法であって、
前記チタンめっき液は、請求項1から請求項6のいずれか一項に記載のチタンめっき液の製造方法によって得られたチタンめっき液である、チタンめっき製品の製造方法。
A method for producing a titanium-plated product, which comprises an electrolysis step of electrodepositing titanium on the surface of the cathode by providing a cathode and an anode in a titanium plating solution containing fluorine and titanium and performing molten salt electrolysis.
A method for producing a titanium plating product, wherein the titanium plating solution is a titanium plating solution obtained by the method for producing a titanium plating solution according to any one of claims 1 to 6.
前記電解工程において用いる前記チタンめっき液を下記の条件でサイクリックボルタンメトリーによって測定し、自然電位と、Ti3+/Ti4+反応電位との差が0.75V以上となるように制御する、請求項7に記載のチタンめっき製品の製造方法。
<条件>
チタンめっき液の温度を650℃以上、850℃以下とし、作用極にグラッシーカーボン、擬似参照極に白金、対極にチタンを使用した際の、作用極の浸漬電位を下限電位とし、そこからさらに2V以上、4V以下の貴な電位である上限電位との間で、作用極に対して電位走査を1mV/秒以上、500mV/秒以下のスキャン速度で、少なくとも5回繰り返す。
7. The titanium plating solution used in the electrolysis step is measured by cyclic voltammetry under the following conditions, and the difference between the natural potential and the Ti 3+ / Ti 4+ reaction potential is controlled to be 0.75 V or more. A method for manufacturing a titanium-plated product according to.
<Conditions>
When the temperature of the titanium plating solution is 650 ° C or higher and 850 ° C or lower, glassy carbon is used as the working electrode, platinum is used as the pseudo reference electrode, and titanium is used as the counter electrode, the immersion potential of the working electrode is set as the lower limit potential, and 2V is further increased from there. As mentioned above, the potential scanning with respect to the working electrode is repeated at least 5 times at a scanning speed of 1 mV / sec or more and 500 mV / sec or less with respect to the upper limit potential which is a noble potential of 4 V or less.
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