JP6892738B2 - Optical element and manufacturing method of optical element - Google Patents

Description

The present invention relates to an optical element using an electrodeposition element and a method for manufacturing the optical element.

Patent Documents 1 and 2 disclose so-called electrodeposition elements. The electrodeposition element mainly has a pair of transparent electrodes arranged to face each other and an electrolyte layer sandwiched between the pair of transparent electrodes and containing an electrodeposition material containing silver. Further, on one surface of the pair of transparent electrodes, a particle-modified electrode formed by depositing a large number of fine particles is provided.

The electrolyte layer is almost transparent, and the electrodeposition element is in a light transmitting state (transparent state) in a steady state (when no voltage is applied). When a DC voltage is applied between the pair of transparent electrodes, the electrodeposition material (silver, etc.) of the electrolyte layer is deposited and deposited on the electrodes by an electrochemical reaction (oxidation / reduction reaction). When the electrodeposition material is deposited and deposited on the surface of the relatively uneven electrode provided with the particle-modifying electrode, the electrodeposition element is put into a light absorption state (light-shielding state) due to plasmon absorption of the electrodeposition material. Further, when the electrodeposition material is deposited and deposited on the surface of a relatively flat electrode, the electrodeposition material (silver or the like) forms a mirror surface, and the electrodeposition element is in a light reflection state (mirror surface state).

Japanese Unexamined Patent Publication No. 2012-181389 Japanese Patent No. 5751560

An object of the present invention is mainly to provide a highly reliable optical element using an electrodeposition element.

According to the main viewpoint of the present invention, it is a first electrode arranged on a surface facing the first and second substrates arranged to face each other and the second substrate of the first substrate. The first electrode, which is patterned into a predetermined planar shape and includes an uneven structure integrally formed on the surface, is arranged on the surface of the second substrate facing the first substrate. The second electrode has an electrolyte layer containing an electrodeposition material containing silver in the gap between the first and second substrates, and the first electrode is a surface of the first substrate. is disposed so as to expose a portion, on the first substrate, also the surface of the portion exposed from the first electrode, the convex-concave structure is provided, wherein said first substrate first An optical element, in which the contact interface with the electrode of 1 is relatively flat, is provided.

An optical element with high reliability can be obtained.

FIG. 1A is a cross-sectional view showing the basic structure of the electrodeposition element, and FIGS. 1B and 1C are graphs showing the wavelength dependence of the light transmittance and the light reflectance of the electrodeposition element. 2A to 2D are cross-sectional views showing the structure of the electrodeposition element according to the first embodiment and the manufacturing process of the substrate with electrodes constituting the electrodeposition element. 3A to 3D are cross-sectional views showing the structure of the electrodeposition element according to the second embodiment and the manufacturing process of the substrate with electrodes constituting the electrodeposition element. 4A to 4D are cross-sectional views showing the structure of the electrodeposition element according to the third embodiment and the manufacturing process of the substrate with electrodes constituting the electrodeposition element.

First, the basic operation of the ED element will be described with reference to the electrodeposition element (ED element) according to the reference example.

FIG. 1A is a cross-sectional view showing an ED element 110 according to a reference example. The ED element 110 mainly includes lower and upper substrates 80 and 90 arranged to face each other, a seal frame member 40 sandwiched between the lower and upper substrates 80 and 90, and an electrolyte layer (electrolyte solution) 50. ..

The lower substrate 80 has a structure in which a transparent electrode 82 and a decorative electrode 83 are sequentially laminated on the entire surface of the support substrate 81. Further, the upper substrate 90 has a structure in which the transparent electrode 92 is laminated on the entire surface of the support substrate 91. The transparent electrode 82 (or decorative electrode 83) and the transparent electrode 92 are arranged so as to face each other.

As the support substrates 81 and 91, a translucent substrate is used. For example, a plate substrate such as blue plate glass or a film substrate made of polycarbonate or the like is used. The transparent electrodes 82 and 92 are composed of members having translucency and conductivity, such as indium tin oxide (ITO) and indium zinc oxide (IZO). The transparent electrodes 82 and 92 may be patterned in a predetermined planar shape.

The decorative electrode 83 is formed by depositing nanometer-sized fine particles. The decorative electrode 83 has a fine uneven shape as a whole, and is at least rougher than the surfaces of the transparent electrodes 82 and 92. The fine particles constituting the decorative electrode 83 include a member having translucency and conductivity, such as ITO. When the transparent electrode 82 is patterned into a predetermined planar shape, the decorative electrode 83 is also generally patterned according to the planar shape of the transparent electrode 82.

The seal frame member 40 is made of resin or the like, and is provided in a closed shape along the peripheral edges of the lower and upper substrates 80, 90 within the lower or upper substrates 80, 90. The electrolyte layer 50 is one in which an electrodeposition (ED) material (for example, silver) is dissolved in a solvent, and is formed in the lower and upper substrates 80 and 90 and the space 50a defined by the seal frame member 40. It is filled. The power supply device 60 is connected to the transparent electrodes 82 and 92, and various voltages can be applied to the electrolyte layer 50 via the transparent electrodes 82 and 92 (or the decorative electrode 83).

1B and 1C are graphs showing a light transmission spectrum and a light reflection spectrum of the ED element 110 in a steady state (when no voltage is applied) or when a voltage is applied. In FIGS. 1B and 1C, the horizontal axis represents the wavelength (nm) of the light incident on the ED element, and the vertical axis represents the transmission (%) and the reflectance (%) with respect to the wavelength of the incident light, respectively.

In FIG. 1B, the spectrum Toff is a light transmission spectrum of the ED element in a steady state (when no voltage is applied). The spectrum Tonu is a light transmission spectrum of the ED element when a negative DC voltage (−2.5 V) is applied to the upper substrate 90 (transparent electrode 92) with respect to the lower substrate 80 (transparent electrode 82). The spectrum Tonl is a light transmission spectrum of the ED element when a negative DC voltage (−2.5 V) is applied to the lower substrate 80 (transparent electrode 82) with respect to the upper substrate 90 (transparent electrode 92).

Further, in FIG. 1C, the spectrum Roff is a light reflection spectrum of the ED element in a steady state (when no voltage is applied). The spectrum Ronu is a light reflection spectrum of the ED element when a negative DC voltage (−2.5V) is applied to the upper substrate 90 (transparent electrode 92) with respect to the lower substrate 80 (transparent electrode 82). The spectrum Ronl is a light reflection spectrum of the ED element when a negative DC voltage (−2.5V) is applied to the lower substrate 80 (transparent electrode 82) with respect to the upper substrate 90 (transparent electrode 92).

As shown in the spectrum Toff of FIG. 1B, the light transmittance of the ED element is extremely high in the steady state, and the ED element realizes a high light transmission state (transparent state). This is because the electrolyte layer is generally transparent. By changing the type of solvent in the electrolyte layer or reducing the thickness of the electrolyte layer (narrowing the distance between the lower substrate and the upper substrate), the light transmission spectrum in the steady state can be made flatter. be able to.

Further, as shown in the spectrum Ronu of FIG. 1C, when a negative voltage is applied to the upper substrate with respect to the lower substrate, the light reflectance of the ED element becomes extremely high, and the ED element is in a high light reflection state (mirror surface state). Realize. This is because the ED material (for example, silver) in the electrolyte layer is deposited on the transparent electrode surface of the relatively flat upper substrate by applying a voltage, and the deposited ED material constitutes a mirror surface.

When the voltage application is stopped, the ED material deposited on the transparent electrode surface is dissolved again in the electrolyte layer (solvent) and disappears from the transparent electrode surface. As a result, the ED element realizes a high light transmission state again.

Further, as shown in the spectrum Tonl of FIG. 1B and the spectrum Ronl of FIG. 1C, when a negative voltage is applied to the lower substrate with respect to the upper substrate, the light transmittance and the light reflectance of the ED element become extremely low, and the ED The element realizes a light absorption state (light shielding state). This is because the ED material (for example, silver) in the electrolyte layer is deposited on the decorative electrode surface of the lower substrate which is relatively uneven by applying a voltage, and when light is incident on the deposited ED material, plasmon absorption (for example, silver) Or diffuse reflection) occurs.

When the voltage application is stopped, the ED material deposited on the surface of the decorative electrode is dissolved again in the electrolyte layer (solvent) and disappears from the surface of the decorative electrode. As a result, the ED element realizes a high light transmission state again.

As described above, when the ED material is deposited on a flat surface (that is, the surface of the transparent electrode), the region where the ED material is deposited becomes a mirror surface (light reflection) region, and the ED material is deposited on the uneven surface (that is, the surface of the decorative electrode). When precipitated, the region where the ED material is deposited becomes a light-shielding (light absorption) region. The ED element 110 can realize at least three states of a transparent state (light transmitting state), a mirror surface state (light reflecting state), and a light blocking state (light absorbing state).

The decorative electrode 83 is formed by depositing nanometer-sized fine particles (ITO). The decorative electrode 83 may be peeled off from the transparent electrode 82 depending on the conditions. In this case, the reliability and display quality of the ED element 110 may deteriorate. It is preferable that such a decrease in device performance is suppressed.

FIG. 2A is a cross-sectional view showing the ED element 101 according to the first embodiment. The ED element 101 is mainly a substrate provided with a decorative electrode of the ED element 110 according to a reference example, that is, a modified structure of a lower substrate. The ED element 101 mainly includes lower and upper substrates 10, 90 arranged to face each other, and an electrolyte layer (electrolyte solution) 50 sandwiched between the lower and upper substrates 10, 90. In FIG. 2A, the seal frame member, the power supply device, and the like are not shown.

The upper substrate 90 has the same structure as that of the ED element 110 according to the reference example, and has a structure in which a transparent electrode 92 having a relatively flat surface is formed on substantially the entire surface of the support substrate 91. Hereinafter, the upper transparent electrode 92 may be referred to as a common electrode 92, and the upper substrate 90 may be referred to as a common substrate 90.

The lower substrate 10 has a structure in which transparent electrodes 12 patterned in a predetermined planar shape are formed on the surface of the support substrate 11. The surface of the support substrate 11 is partially exposed from the transparent electrode 12. Hereinafter, the lower transparent electrode 12 may be referred to as a segment electrode 12, and the lower substrate 10 may be referred to as a segment substrate 10.

An uneven structure 13 integrally formed with the segment electrode 12 is provided on the surface of the segment electrode 12. The surface of the segment electrode 12 is at least rougher than the surface of the common electrode 92. More specifically, the surface roughness of the segment electrode 12 / the arithmetic average roughness (Ra) of the uneven structure 13 is, for example, 20 nm or more. The surface roughness of the common electrode 92 having a relatively flat surface is, for example, 20 nm or less.

The uneven structure 14 is also provided on the surface of the support substrate 11 in the region 11a exposed from the segment electrode 12. In the support substrate 11, the surface of the region 11a exposed from the segment electrode 12 is at least rougher than the surface of the region 11b (contact interface with the segment electrode 12) covered by the segment electrode 12. More specifically, the surface roughness of the exposed region 11a of the support substrate 11 / the arithmetic average roughness (Ra) of the uneven structure 14 is, for example, 20 nm or more, and the surface roughness of the covering region 11b is, for example, 20 nm or less. ..

Hereinafter, a method for manufacturing the ED element 101 will be described. First, a method for manufacturing the segment substrate 10 will be described with reference to FIGS. 2B to 2D.

2B to 2D are cross-sectional views showing how the segment substrate 10 is manufactured. First, a support substrate 11 such as a blue plate glass is prepared. The planar shape of the support substrate 11 is, for example, a rectangular shape having a side of about 15 mm to 20 mm.

As shown in FIG. 2B, a conductive film is formed on the entire surface of the support substrate 11 by a sputtering method, a vacuum vapor deposition method, or the like. The conductive film is a film formed of, for example, ITO, etc., and has a thickness of about 340 nm and a flat surface. Subsequently, the conductive film is formed (patterned) into a predetermined planar shape by using a photolithography method or the like to form the segment electrode 12. At this time, the surface of the support substrate 11 is partially exposed from the segment electrode 12.

As shown in FIG. 2C, the surfaces of the support substrate 11 and the segment electrode 12 are blasted. For example, alumina particles having an average particle size of about 3 μm are sprayed at an air pressure of about 0.25 MPa from a position about 50 mm away from the support substrate 11 or the segment electrode 12.

As shown in FIG. 2D, by performing such a blasting process, a large number of fine recesses are formed on the surface of the segment electrode 12. That is, an uneven structure 13 formed integrally with the segment electrode 12 is formed on the surface of the segment electrode 12. The surface roughness of the segment electrode 12 is, for example, about 30 nm. Since the blasting treatment is applied to the entire surface of the substrate including the support substrate 11 and the segment electrode 12, the uneven structure 14 is also formed in the region of the support substrate 11 exposed from the segment electrode 12.

From the above, the lower substrate 10 is completed. The method of manufacturing the ED element 101 will be described again with reference to FIG. 2A.

Next, the upper substrate 90 is manufactured. A common electrode 92 (ITO or the like) is formed on the entire surface of the support substrate 21 (blue plate glass or the like) in the same manner as the lower substrate 10.

Next, a gap control agent having a particle size of several tens of μm to several hundreds of μm, for example, 50 μm is sprayed on either the lower substrate or the upper substrate 10, 90, for example, the lower substrate 10. The density of the gap control agent is, for example, about ^{1 to 3 pieces / mm 2.} Instead of spraying the gap control agent, columnar protrusions (ribs) may be formed. Further, the gap control agent may be sprayed on the upper substrate 90.

Subsequently, the seal frame member 40 (see FIG. 1A) is formed on either the lower substrate or the upper substrate 10, 90, for example, the lower substrate 10. The seal frame member has, for example, a rectangular frame-like overall planar shape and is made of an ultraviolet curable resin. The seal frame member may be made of a thermosetting resin.

Next, the electrolytic solution (electrolyte layer) 50 is prepared. Then, the electrolytic solution 50 is dropped onto the inside of the seal frame member of the lower substrate 10 using a dispenser or the like.

The electrolytic solution 50 is composed of, for example, an ED material (AgNO _3, etc.), an electrolyte (TBABr, etc.), a mediator (CuCl _2, etc.), a solvent (DMSO: dimethyl-sulfoxide, etc.) and the like. In addition, a gelling polymer (PVB: polyvinyl-butyral or the like) or the like may be further added to form a gel (jelly). In the embodiment, in DMF (dimethyl-formamide) as a solvent was used 350mM with AgNO ₃ as ED material, 700 mM of LiBr as the supporting electrolyte, the CuCl ₂ as a mediator were added 30 mM.

ED material, in addition to AgNO _3, or the like can be used AgClO ₄ and AgBr example containing silver. Here, the ED material refers to a material on the surface of a transparent electrode (or a decorative electrode) in which a part thereof is deposited, deposited, or disappears due to a redox reaction or the like.

The supporting electrolyte is not limited as long as it promotes the redox reaction of the ED material. For example, lithium salts (LiCl, LiBr, LiI, LiBF ₄ , LiClO _4, etc.), potassium salts (KCl, KBr, KI, etc.), and sodium salts (NaCl, NaBr, NaI, etc.) can be preferably used.

As the mediator, in _{addition to CuCl 2} containing copper, for example, CuSO ₄ containing copper, CuBr ₂ or the like can be used. Here, the mediator refers to a material that is oxidized and reduced with an electrochemically lower energy than silver.

The solvent is not limited as long as it can stably hold the ED material or the like. For example, a polar solvent such as water or propylene carbonate, a non-polar organic solvent, an ionic liquid, an ionic conductive polymer, a polymer electrolyte, or the like can be used. Specifically, in addition to DMSO, propylene carbonate, N, N-dimethylformamide, tetrahydrofuran, acetonitrile, polyvinyl sulfuric acid, polystyrene sulfonic acid, polyacrylic acid and the like can be preferably used.

Next, the upper substrate 90 is attached to the lower substrate 10 on which the electrolytic solution 50 is dropped so that the transparent electrodes 12 and 92 face each other. The lower and upper substrates 10 and 20 can be bonded in the air, in a vacuum, or in a nitrogen atmosphere. After that, the seal frame member is irradiated with ultraviolet rays to cure the seal frame member.

Finally, a power supply device (see FIG. 1A) is connected to the segment electrode 12 and the common electrode 92. The power supply unit outputs, for example, a predetermined DC voltage. From the above, the ED element 101 is completed.

Like the ED element 110 according to the reference example, the ED element 101 is in a high light transmission state (transparent state) at a steady state. Further, if the ED material is deposited on the surface of the common electrode 92, a high light reflection state (mirror surface state) is realized.

When a negative DC voltage (−3.0 V) is applied to the segment electrode 12 with the common electrode 92 as a reference potential, the ED material (silver) is deposited on the surface of the segment electrode 12 (the surface of the uneven structure 13). The region where the ED material is deposited becomes a light absorption state (light-shielding / black state) due to plasmon absorption (or diffuse reflection). That is, the ED element 101 displays a black pattern corresponding to the planar shape of the segment electrode 12.

In this way, the ED element can realize a light absorption state (light-shielding state) by forming an uneven structure integrated with the transparent electrode instead of the decorative electrode on which fine particles are deposited. Since the uneven structure 13 on the surface of the segment electrode 12 is provided integrally with the electrode, it is presumed that peeling or the like is unlikely to occur. Therefore, it is considered that the performance deterioration of the ED element 101 due to peeling of the electrode surface or the like is suppressed.

FIG. 3A is a cross-sectional view showing the ED element 102 according to the second embodiment. This ED element 102 is mainly a modification of the structure of the lower substrate of the ED element 110 according to the reference example or the ED element 101 according to the first embodiment. The ED element 102 mainly includes a lower substrate (segment substrate) 20 and an upper substrate (common substrate) 90 arranged to face each other, an electrolyte layer (electrolyte solution) 50 sandwiched between the segment substrate 20 and the common substrate 90, and the like. To be equipped.

The segment substrate 20 has a structure in which segment electrodes 22 patterned in a predetermined planar shape are formed on the surface of the support substrate 21. The surface of the support substrate 21 is partially exposed from the segment transparent electrode 22.

An uneven structure 23 integrally formed with the segment electrode 22 is provided on the surface of the segment electrode 22. The surface of the segment electrode 22 is at least rougher than the surface of the common electrode 92. More specifically, the height difference of the surface roughness / uneven structure 23 of the segment electrode 22 is, for example, 20 nm or more.

The uneven structure 24 is also provided on the entire surface of the support substrate 21. Unlike the first embodiment, the contact interface with the segment electrode 22 is also uneven. The surface of the support substrate 21 is at least rougher than the back surface thereof and the surface of the opposite substrate (upper support substrate 91). More specifically, the height difference of the surface roughness / uneven structure 24 of the support substrate 21 is, for example, 20 nm or more.

Hereinafter, a method for manufacturing the ED element 102 will be described. First, a method for manufacturing the segment substrate 20 will be described with reference to FIGS. 3B to 3D.

3B to 3D are cross-sectional views showing a state in which the segment substrate 20 is manufactured. First, a support substrate 21 such as a blue plate glass is prepared.

As shown in FIG. 3B, the surface of the support substrate 21 is blasted. For example, alumina particles having an average particle size of about 3 μm are sprayed from a position about 50 mm away from the support substrate 21 at an air pressure of about 0.25 MPa.

As shown in FIG. 3C, by performing such a blasting process, a large number of fine recesses are formed on the surface of the support substrate 21. That is, an uneven structure 24 formed integrally with the support substrate 21 is formed on the surface of the support substrate 21. The surface roughness of the support substrate 21 is, for example, about 19 nm.

As shown in FIG. 3D, a patterned segment electrode 22 is formed on the entire surface of the support substrate 21. The segment electrode 22 is made of, for example, an ITO film, and can be manufactured by using a sputtering method and a photolithography method.

The segment electrode 22 is formed on a support substrate 21 having an uneven surface. Therefore, the surface of the segment electrode 22 is also uneven to the same extent as the surface of the support substrate 21. That is, the segment electrode 22 has an uneven structure 23 integrated with the electrode.

From the above, the segment substrate 20 is completed. After that, in the same manner as in the first embodiment, the common substrate 90 is produced, and the electrolyte layer 50 is arranged between the segment substrate 20 and the common substrate 90 which are arranged to face each other to complete the ED element 102.

Even if the segment substrate 20 has such a structure, if a voltage is applied to deposit the ED material on the surface of the segment electrode 22 (the surface of the uneven structure 23), the region where the ED material is deposited will be in a light absorption state (the region where the ED material is deposited). Light-shielded / black state). That is, the ED element 102 displays a black pattern corresponding to the planar shape of the segment electrode 22. Since the uneven structure is provided on the entire surface of the support substrate 21 constituting the segment substrate 20, the light reflectance of the ED element 102 is higher than that of the ED element 101 when light is incident from the segment substrate side. Reduced.

In this way, instead of directly making the surface of the transparent electrode uneven by the blast method or the like, the surface of the support substrate is made uneven, and the transparent electrode is formed on the surface of the support substrate to make the surface of the transparent electrode uneven. Also, the ED element can realize a light absorption state (light-shielding state). Since the uneven structure 23 on the surface of the segment electrode 22 is also provided integrally with the electrode, peeling or the like is unlikely to occur. Therefore, it is considered that the performance deterioration of the ED element 102 due to the peeling or the like of the electrode surface is suppressed. ..

FIG. 4A is a cross-sectional view showing the ED element 103 according to the third embodiment. The ED element 103 is mainly a modified structure of the lower substrate of the ED element according to the first to second embodiments. The ED element 103 mainly includes a lower substrate (segment substrate) 30 and an upper substrate (common substrate) 90 arranged to face each other, an electrolyte layer (electrolyte solution) 50 sandwiched between the segment substrate 30 and the common substrate 90, and the like. To be equipped.

The segment substrate 30 has a structure in which segment electrodes 32 patterned in a predetermined planar shape are formed on the surface of the support substrate 31. The surface of the support substrate 31 is partially exposed from the segment transparent electrode 32.

An uneven structure 33 integrally formed with the segment electrode 32 is provided on the surface of the segment electrode 32. The surface of the segment electrode 32 is at least rougher than the surface of the common electrode 92. More specifically, the height difference of the surface roughness / uneven structure 33 of the segment electrode 32 is, for example, 20 nm or more. The surface of the support substrate 33 is relatively flat as a whole.

Hereinafter, a method for manufacturing the ED element 103 will be described. First, a method for manufacturing the segment substrate 30 will be described with reference to FIGS. 4B to 4D.

4B to 4D are cross-sectional views showing how the segment substrate 20 is manufactured. First, a support substrate 31 such as a blue plate glass is prepared.

As shown in FIG. 4B, a conductive film having a flat surface is formed on the entire surface of the support substrate 31 by a sputtering method, a vacuum vapor deposition method, or the like. The conductive film is formed of, for example, ITO. Subsequently, the conductive film is formed (patterned) into a predetermined planar shape by using a photolithography method or the like to form the segment electrode 32.

As shown in FIG. 4C, the segment electrode 32 is mainly subjected to an etching process. As the etchant, for example, an aqueous solution having a concentration of oxalic acid of 5% or less is used. The substrate 31 with the electrode 32 is immersed in, for example, an etchant at room temperature for 900 seconds.

As shown in FIG. 4D, by performing such an etching process, a large number of fine recesses are formed on the surface of the segment electrode 32. That is, an uneven structure 33 formed integrally with the segment electrode 32 is formed on the surface of the segment electrode 32. The etchant used here acts on the electrode (ITO) but not on the substrate ( _{glass whose main component is SiO 2} ), and is therefore exposed from the segment electrode 32 of the support substrate 31. No uneven structure is formed in the region.

From the above, the segment substrate 30 is completed. After that, in the same manner as in the first embodiment, the common substrate 90 is produced, and the electrolyte layer 50 is arranged between the segment substrate 30 and the common substrate 90 arranged opposite to each other to complete the ED element 103.

Even if the segment substrate 30 has such a structure, if a voltage is applied to deposit the ED material on the surface of the segment electrode 32 (the surface of the uneven structure 33), the region where the ED material is deposited will be in a light absorbing state (the region where the ED material is deposited). It becomes light-shielded / black state). Since the uneven structure 33 on the surface of the segment electrode 32 is also provided integrally with the electrode, peeling or the like is unlikely to occur. Therefore, it is considered that the performance deterioration of the ED element 103 due to the peeling or the like of the electrode surface is suppressed. ..

Although the embodiments for carrying out the present invention have been described above, the present invention is not limited thereto. For example, the uneven structure provided on the electrode surface may be provided on the common electrode side instead of the segment electrode side. Alternatively, it may be provided on both the segment electrode and the common electrode. In addition, it will be obvious to those skilled in the art that various changes, improvements, combinations, etc. are possible.

10 ... Lower substrate (1st embodiment), 11 ... Lower support substrate, 12 ... Lower transparent electrode, 13, 14 ... Concavo-convex structure, 20 ... Lower substrate (2nd embodiment), 21 ... Upper support substrate , 22 ... upper transparent electrode, 23, 24 ... uneven structure, 30 ... lower substrate (third embodiment), 31 ... lower support substrate, 32 ... lower transparent electrode, 33 ... uneven structure, 40 ... seal frame member , 50 electrolyte layer (electrolyte solution), 60 ... power supply, 80 ... lower substrate (reference example), 81 ... lower support substrate, 82 ... lower transparent electrode, 83 ... decorative electrode, 90 ... upper substrate, 91 ... Upper support substrate, 92 ... upper transparent electrode, 101 ... electrodeposition element (first embodiment), 102 ... electrodeposition element (second embodiment), 103 ... electrodeposition element (third embodiment), 110 … Electrodeposition element (reference example).

Claims (3)

With the first and second substrates arranged facing each other,
A first electrode of the first substrate that is arranged on a surface facing the second substrate, which is patterned in a predetermined planar shape and includes an uneven structure integrally formed on the surface. With the first electrode
A second electrode of the second substrate, which is arranged on a surface facing the first substrate,
In the gap between the first and second substrates, an electrolyte layer containing an electrodeposition material containing silver and an electrolyte layer.
Have,
The first electrode is arranged so that a part of the surface of the first substrate is exposed.
An uneven structure is also provided on the surface of the portion of the first substrate exposed from the first electrode.
The contact interface between the first substrate and the first electrode is relatively flat.
Optical element. The claim that the surface roughness of the portion of the first substrate exposed from the first electrode is 20 nm or more, and the surface roughness at the contact interface with the first electrode is less than 20 nm. 1. The optical element according to 1. The process of forming the first electrode having a flat surface on the first substrate, and
The step of patterning the first electrode and
A step of forming an uneven structure on the patterned surface of the first electrode and the surface of the first substrate exposed from the first electrode by a blast method.
The process of forming the second electrode on the second substrate and
A step of superimposing the first substrate and the second substrate so that the first electrode and the second electrode face each other with an electrolyte layer containing an electrodeposition material containing silver interposed therebetween. ,
A method for manufacturing an optical element having.

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