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JP6901250B2 - Piezoelectric parts - Google Patents
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JP6901250B2 - Piezoelectric parts - Google Patents

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JP6901250B2
JP6901250B2 JP2016188325A JP2016188325A JP6901250B2 JP 6901250 B2 JP6901250 B2 JP 6901250B2 JP 2016188325 A JP2016188325 A JP 2016188325A JP 2016188325 A JP2016188325 A JP 2016188325A JP 6901250 B2 JP6901250 B2 JP 6901250B2
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龍章 照峰
龍章 照峰
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Kyocera Corp
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Description

本開示は、例えば発振子として好適に用いられる圧電部品に関するものである。 The present disclosure relates to piezoelectric components that are preferably used as oscillators, for example.

一般的に、発振子に利用される圧電部品は、支持基板と、支持基板の上に搭載された圧電素子と、支持基板と圧電素子との間に微小間隔が生じるようにして圧電素子の両端部を固定する支持部および導電性接合材と、支持基板の上面および圧電素子を覆うように設けられた蓋体とから構成されている。そして、圧電素子は上面および下面に互いに対向するように一対の励振電極を有していて、この励振電極と支持基板の上面に設けられた一対の容量電極とが導電性接合材を介して電気的に接続されている(例えば、特許文献1を参照)。 Generally, the piezoelectric component used for the oscillator is a support substrate, a piezoelectric element mounted on the support substrate, and both ends of the piezoelectric element so that a minute distance is generated between the support substrate and the piezoelectric element. It is composed of a support portion for fixing the portion and a conductive bonding material, and a lid provided so as to cover the upper surface of the support substrate and the piezoelectric element. The piezoelectric element has a pair of excitation electrodes facing each other on the upper surface and the lower surface, and the excitation electrode and the pair of capacitive electrodes provided on the upper surface of the support substrate are electrically connected via a conductive bonding material. (See, for example, Patent Document 1).

特開平11−97965号公報Japanese Unexamined Patent Publication No. 11-97965

従来、圧電素子の強固な固定によって、圧電部品(発振子)の主振動がダンピングされて弱まるため、発振周波数が不安定となって変動するという問題があった。 Conventionally, there has been a problem that the oscillation frequency becomes unstable and fluctuates because the main vibration of the piezoelectric component (oscillator) is damped and weakened by firmly fixing the piezoelectric element.

本開示は、上記事情に鑑みてなされたもので、発振周波数の変動が抑制された高精度な圧電部品を提供することを目的とする。 The present disclosure has been made in view of the above circumstances, and an object of the present disclosure is to provide a highly accurate piezoelectric component in which fluctuations in oscillation frequency are suppressed.

本開示の圧電部品は、支持基板と、該支持基板の上に配置された長尺状の圧電素子と、前記支持基板の上面に前記圧電素子の長手方向の両端部をそれぞれ接合して固定している導電性接合材とを備え、前記導電性接合材は、前記圧電素子の前記両端部の下面から端面にかけて接合されており、前記圧電素子の下側に位置する第1の領域とそれ以外の第2の領域とで密度に差があり、前記導電性接合材は、前記第2の領域よりも前記第1の領域のほうが密度が低いことを特徴とするものである The piezoelectric component of the present disclosure is fixed by joining and fixing a support substrate, a long piezoelectric element arranged on the support substrate, and both ends of the piezoelectric element in the longitudinal direction to the upper surface of the support substrate. The conductive bonding material is bonded from the lower surface to the end surface of both ends of the piezoelectric element, and the first region located below the piezoelectric element and the other regions are joined. There is a difference in density from the second region of the above, and the conductive bonding material is characterized in that the density of the first region is lower than that of the second region .

本開示の圧電部品によれば、主振動のダンピングが抑制され、発振周波数の変動を抑制して当該発振周波数を安定させることができる。 According to the piezoelectric component of the present disclosure, damping of the main vibration is suppressed, fluctuation of the oscillation frequency is suppressed, and the oscillation frequency can be stabilized.

圧電部品の実施形態の一例を示す概略斜視図である。It is a schematic perspective view which shows an example of embodiment of a piezoelectric component. (a)は図1に示す圧電部品の一部省略平面図、(b)は図1に示す圧電部品のA−A線で切断した断面図、(c)は図1に示す圧電部品の底面図である。(A) is a partially omitted plan view of the piezoelectric component shown in FIG. 1, (b) is a cross-sectional view of the piezoelectric component shown in FIG. 1 cut along the line AA, and (c) is a bottom surface of the piezoelectric component shown in FIG. It is a figure. 圧電部品の実施形態の一例を示す要部拡大断面図である。It is an enlarged sectional view of the main part which shows an example of embodiment of a piezoelectric part. 圧電部品の実施形態の他の例を示す要部拡大断面図である。It is an enlarged sectional view of the main part which shows the other example of embodiment of a piezoelectric part. 圧電部品の実施形態の他の例を示す要部拡大断面図である。It is an enlarged sectional view of the main part which shows the other example of embodiment of a piezoelectric part. 圧電部品の実施形態の他の例を示す要部拡大断面図である。It is an enlarged sectional view of the main part which shows another example of embodiment of a piezoelectric part.

以下、添付図面を参照して、圧電部品の実施形態の一例を説明する。なお、以下に示す実施形態によりこの発明が限定されるものではない。 Hereinafter, an example of the embodiment of the piezoelectric component will be described with reference to the accompanying drawings. The present invention is not limited to the embodiments shown below.

図1は圧電部品の実施形態の一例を示す概略斜視図である。また、図2(a)は図1に示す圧電部品の一部省略平面図、図2(b)は図1に示す圧電部品のA−A線で切断した断面図、図2(c)は図1に示す圧電部品の底面図である。また、図3は、圧電部品の実施形態の一例を示す要部拡大断面図である。 FIG. 1 is a schematic perspective view showing an example of an embodiment of a piezoelectric component. 2 (a) is a partially omitted plan view of the piezoelectric component shown in FIG. 1, FIG. 2 (b) is a cross-sectional view of the piezoelectric component shown in FIG. 1 cut along the line AA, and FIG. 2 (c) is. It is a bottom view of the piezoelectric component shown in FIG. Further, FIG. 3 is an enlarged cross-sectional view of a main part showing an example of an embodiment of the piezoelectric component.

図1〜図3に示す例の圧電部品100は、支持基板1と、支持基板1の上に配置された長尺状の圧電素子2と、支持基板1の上面に圧電素子2の長手方向の両端部をそれぞれ接合して固定している導電性接合材4とを備え、導電性接合材4は、圧電素子2の両端部の下面から端面にかけて接合されており、圧電素子2の下側に位置する第1の領域41とそれ以外の第2の領域42とで密度に差がある。 The piezoelectric component 100 of the example shown in FIGS. 1 to 3 includes a support substrate 1, a long piezoelectric element 2 arranged on the support substrate 1, and a top surface of the support substrate 1 in the longitudinal direction of the piezoelectric element 2. A conductive joining material 4 is provided by joining and fixing both ends thereof, and the conductive joining material 4 is joined from the lower surface to the end face of both ends of the piezoelectric element 2 and is attached to the lower side of the piezoelectric element 2. There is a difference in density between the first region 41 located and the other second region 42.

支持基板1は、長尺状の圧電素子2の長手方向の両端部を上面にそれぞれ接合して固定している基板である。例えば、長さが2.5mm〜7.5mm、幅が1.0mm〜3.0mm、厚みが0.1mm〜1mmの長方形状の平板として形成された誘電体からなる基板本体11を有している。基板本体11としては、アルミナやチタン酸バリウム等のセラミック材料、ガラスエポキシ等の樹脂系材料を用いることができる。 The support substrate 1 is a substrate in which both ends of the elongated piezoelectric element 2 in the longitudinal direction are joined to and fixed to the upper surface. For example, it has a substrate body 11 made of a dielectric formed as a rectangular flat plate having a length of 2.5 mm to 7.5 mm, a width of 1.0 mm to 3.0 mm, and a thickness of 0.1 mm to 1 mm. There is. As the substrate main body 11, a ceramic material such as alumina or barium titanate, or a resin-based material such as glass epoxy can be used.

支持基板1を構成する基板本体11の上面には一対の容量電極12(第1容量電極121および第2容量電極122)が設けられている。この第1容量電極121および第2容量電極122は、圧電素子2の励振電極21と電気的に接続されるとともに、入出力端子電極14と電気的に接続され、また後述するグランド端子電極13との間で容量を形成するための電極である。 A pair of capacitive electrodes 12 (first capacitive electrode 121 and second capacitive electrode 122) are provided on the upper surface of the substrate main body 11 constituting the support substrate 1. The first capacitance electrode 121 and the second capacitance electrode 122 are electrically connected to the excitation electrode 21 of the piezoelectric element 2, electrically connected to the input / output terminal electrode 14, and also to the ground terminal electrode 13 described later. It is an electrode for forming a capacitance between the two.

第1容量電極121は、基板本体11の長手方向の一方の端部側(図の左側)に配置されて当該基板本体11の幅方向(短手方向)に延びた領域と、基板本体11の長手方向の一方の端部側から中央部に向かって延びて配置された領域とを有している。また、第2容量電極122は、基板本体11の長手方向の他方の端部側(図の右側)に配置されて当該基板本体11の幅方向(短手方向)に延びた領域と、支持基板1の長手方向の他方の端部側から中央部に向かって延びて配置された領域とを有している。なお、第1容量電極121と第2容量電極122とは、基板本体11の上面の長手方向の中央部に間隔をあけて配置されている。 The first capacitance electrode 121 is arranged on one end side (left side in the drawing) of the substrate main body 11 in the longitudinal direction and extends in the width direction (short direction) of the substrate main body 11 and the substrate main body 11. It has a region arranged extending from one end side in the longitudinal direction toward the central portion. Further, the second capacitance electrode 122 is arranged on the other end side (right side in the drawing) of the substrate main body 11 in the longitudinal direction and extends in the width direction (short direction) of the substrate main body 11 and a support substrate. It has a region arranged extending from the other end side in the longitudinal direction of 1 toward the central portion. The first capacitance electrode 121 and the second capacitance electrode 122 are arranged at intervals in the central portion of the upper surface of the substrate main body 11 in the longitudinal direction.

また、支持基板1は、基板本体11の下面に、一対の容量電極12と電気的に接続された一対の入出力端子電極14と、一対の入出力端子電極14の間に配置されたグランド端子電極13とを有している。 Further, the support substrate 1 is a ground terminal arranged on the lower surface of the substrate main body 11 between a pair of input / output terminal electrodes 14 electrically connected to the pair of capacitance electrodes 12 and a pair of input / output terminal electrodes 14. It has an electrode 13.

一対の入出力端子電極14は、電気信号の入り口または出口となる端子電極であって、基板本体11の下面に当該基板本体11の幅方向に延びて設けられている。また、一対の入出力端子電極14は、基板本体11の上面に設けられた第1容量電極121または第2容量電極122と電気的に接続されているとともに、外部回路基板に実装された際に外部回路と電気的に接続される。 The pair of input / output terminal electrodes 14 are terminal electrodes that serve as inlets or outlets for electric signals, and are provided on the lower surface of the substrate main body 11 so as to extend in the width direction of the substrate main body 11. Further, the pair of input / output terminal electrodes 14 are electrically connected to the first capacitance electrode 121 or the second capacitance electrode 122 provided on the upper surface of the substrate main body 11, and when mounted on an external circuit board. It is electrically connected to an external circuit.

グランド端子電極13は、基板本体11の下面における一対の入出力端子電極14の間に配置され、当該基板本体11の幅方向に延びて設けられている。また、グランド端子電極13は、基板本体11を挟んで第1容量電極121と第2容量電極122とにまたがって対向して、静電容量(負荷容量)を形成している。また、外部回路基板に実装された際には、グランド電位に電気的に接続される。 The ground terminal electrode 13 is arranged between a pair of input / output terminal electrodes 14 on the lower surface of the substrate main body 11, and is provided so as to extend in the width direction of the substrate main body 11. Further, the ground terminal electrode 13 forms a capacitance (load capacitance) so as to face the first capacitance electrode 121 and the second capacitance electrode 122 with the substrate main body 11 interposed therebetween. When mounted on an external circuit board, it is electrically connected to the ground potential.

本例のように、第1容量電極121および第2容量電極122とグランド端子電極13
とが基板本体11を介して対向する場合は、第1容量電極121とグランド端子電極13とが対向する領域および第2容量電極122とグランド端子電極13とが対向する領域の面積が等しくなるように設定されることにより、それぞれの対向する領域で得られる静電容量が等しくなる。また、第1容量電極121および第2容量電極122とグランド端子電極13とが基板本体11を介して対向する場合は、第1容量電極121とグランド端子電極13とが対向する領域および第2容量電極122とグランド端子電極13とが対向する領域を大きくすることができるので、静電容量を大きく形成することができる。なお、それぞれの対向する領域で得られる静電容量は、圧電部品100が接続されてともに発振回路を構成する増幅回路素子の特性によって定められる。
As in this example, the first capacitance electrode 121, the second capacitance electrode 122, and the ground terminal electrode 13
When the two are opposed to each other via the substrate main body 11, the areas where the first capacitance electrode 121 and the ground terminal electrode 13 face each other and the area where the second capacitance electrode 122 and the ground terminal electrode 13 face each other are equal. By setting to, the capacitances obtained in the opposite regions become equal. When the first capacitance electrode 121 and the second capacitance electrode 122 and the ground terminal electrode 13 face each other via the substrate main body 11, the region where the first capacitance electrode 121 and the ground terminal electrode 13 face each other and the second capacitance Since the region where the electrode 122 and the ground terminal electrode 13 face each other can be increased, the capacitance can be increased. The capacitance obtained in each of the opposite regions is determined by the characteristics of the amplifier circuit element to which the piezoelectric component 100 is connected to form the oscillation circuit.

さらに、支持基板1の側面には、第1容量電極121または第2容量電極122と入出力端子電極14とを電気的に接続する側面電極15が設けられている。また、支持基板1の側面には、外部回路基板へのはんだ接合(実装性)などの関係で、支持基板1の側面において、グランド端子電極13と電気的に接続された側面電極16も設けられている。 Further, on the side surface of the support substrate 1, a side electrode 15 for electrically connecting the first capacitance electrode 121 or the second capacitance electrode 122 and the input / output terminal electrode 14 is provided. Further, on the side surface of the support substrate 1, a side electrode 16 electrically connected to the ground terminal electrode 13 is also provided on the side surface of the support substrate 1 in relation to solder bonding (mountability) to an external circuit board. ing.

第1容量電極121,第2容量電極122,グランド端子電極13,入出力端子電極14,側面電極15、16の材料としては、金,銀,銅,アルミニウム,タングステン等の金属粉末を樹脂中に分散させた導電性樹脂(導電性ペースト)や、それら金属粉末にガラス等の添加物を加えて焼き付けた厚膜導体等を用いることができる。必要に応じてNi/Au、Ni/Sn等のめっきを形成したものでもよい。 As materials for the first capacitance electrode 121, the second capacitance electrode 122, the ground terminal electrode 13, the input / output terminal electrode 14, and the side electrodes 15 and 16, metal powders such as gold, silver, copper, aluminum, and tungsten are contained in the resin. A dispersed conductive resin (conductive paste), a thick film conductor obtained by adding an additive such as glass to these metal powders and baking them can be used. If necessary, plating such as Ni / Au or Ni / Sn may be formed.

支持基板1の上には、直方体状の圧電素子2が長手方向の両端部を固定されて搭載されている。そして、支持基板1の上には、図2に示すように、必要により第1の支持部31および第2の支持部32が設けられていて、圧電素子2の長手方向の両端部が第1の支持部31および第2の支持部32によって支持されるようにして、圧電素子2が振動可能に搭載されている。 A rectangular parallelepiped piezoelectric element 2 is mounted on the support substrate 1 with both ends fixed in the longitudinal direction. Then, as shown in FIG. 2, a first support portion 31 and a second support portion 32 are provided on the support substrate 1 as needed, and both ends of the piezoelectric element 2 in the longitudinal direction are first. The piezoelectric element 2 is oscillatedly mounted so as to be supported by the support portion 31 and the second support portion 32 of the above.

第1の支持部31および第2の支持部32は、例えば金,銀,銅,アルミニウム,タングステン等の金属粉末を樹脂中に分散させてなる突起状の部位である。例えば、縦、横方向の長さ(径)が0.1mm〜1.0mm、厚みが10μm〜100μmで、角柱状、円柱状などに形成される。第1の支持部31および第2の支持部32は、それぞれ1つずつの構成であってもよく、図6に示すような複数個ずつの構成であってもよい。 The first support portion 31 and the second support portion 32 are protrusion-shaped portions formed by dispersing metal powders such as gold, silver, copper, aluminum, and tungsten in a resin. For example, it has a length (diameter) of 0.1 mm to 1.0 mm in the vertical and horizontal directions and a thickness of 10 μm to 100 μm, and is formed in a prismatic shape, a columnar shape, or the like. The first support portion 31 and the second support portion 32 may each have one configuration or a plurality of configurations as shown in FIG.

第1の支持部31および第2の支持部32のまわりには導電性接合材4が設けられていて、圧電素子2の両端部が第1の支持部31,第2の支持部32および第1容量電極121,第2容量電極122に接合され、電気的に接続されている。 A conductive bonding material 4 is provided around the first support portion 31 and the second support portion 32, and both ends of the piezoelectric element 2 are the first support portion 31, the second support portion 32, and the second support portion 32. It is joined to the 1-capacity electrode 121 and the 2nd capacitance electrode 122, and is electrically connected.

この導電性接合材4は、圧電素子2の両端部の下面から端面にかけて接合されている。図に示す例では、導電性接合材4は、圧電素子2の端面を這い上がって圧電素子2の上面までかかるように設けられている。このような導電性接合材4としては、例えばはんだや導電性接着剤等が用いられ、はんだであれば、例えば銅,錫,銀からなる鉛を含まない材料等を用いることができ、導電性接着剤であれば、銀,銅,ニッケル等の導電性粒子を75〜95質量%含有したエポキシ系の導電性樹脂またはシリコーン系の樹脂を用いることができる。 The conductive bonding material 4 is bonded from the lower surface to the end surface of both end portions of the piezoelectric element 2. In the example shown in the figure, the conductive bonding material 4 is provided so as to crawl up the end surface of the piezoelectric element 2 and extend to the upper surface of the piezoelectric element 2. As such a conductive bonding material 4, for example, solder or a conductive adhesive can be used, and in the case of solder, for example, a lead-free material made of copper, tin, or silver can be used, and the conductive material 4 can be used. As an adhesive, an epoxy-based conductive resin or a silicone-based resin containing 75 to 95% by mass of conductive particles such as silver, copper, and nickel can be used.

なお、図2および図3に示す例では、第1の支持部31および第2の支持部32が設けられているが、図4に示すように、第1の支持部31および第2の支持部32が設けられておらず、圧電素子2を浮かせて搭載するように当該圧電素子2の両端部を導電性接合材4のみで固定してもよい。 In the examples shown in FIGS. 2 and 3, the first support portion 31 and the second support portion 32 are provided, but as shown in FIG. 4, the first support portion 31 and the second support portion 31 and the second support portion 32 are provided. The portions 32 may not be provided, and both ends of the piezoelectric element 2 may be fixed only with the conductive bonding material 4 so that the piezoelectric element 2 is mounted in a floating manner.

圧電素子2は、圧電体22と、圧電体22の一方主面(上面)および他方主面(下面)にそれぞれ互いに対向する領域(交差領域)を有するように設けられた一対の励振電極21とを備えている。 The piezoelectric element 2 includes a piezoelectric body 22 and a pair of excitation electrodes 21 provided so as to have regions (intersection regions) facing each other on one main surface (upper surface) and the other main surface (lower surface) of the piezoelectric body 22. It has.

圧電素子2を構成する圧電体22は、例えば、長さが1.0mm〜4.0mm、幅が0.2mm〜2mm、厚みが40μm〜1mmの長尺状(直方体状)に形成されたものである。この圧電体22は、例えばチタン酸鉛,チタン酸ジルコン酸鉛,タンタル酸リチウム、ニオブ酸リチウム、ニオブ酸ナトリウム,ニオブ酸カリウム,ビスマス層状化合物等を基材とする圧電セラミックスを用いて形成することができる。 The piezoelectric body 22 constituting the piezoelectric element 2 is formed in a long shape (rectangular parallelepiped shape) having a length of 1.0 mm to 4.0 mm, a width of 0.2 mm to 2 mm, and a thickness of 40 μm to 1 mm, for example. Is. The piezoelectric body 22 is formed by using piezoelectric ceramics based on, for example, lead titanate, lead zirconate titanate, lithium tantalate, lithium niobate, sodium niobate, potassium niobate, bismuth layered compound and the like. Can be done.

また、圧電体22の一方主面(上面)に設けられた励振電極21は長手方向の一方の端部から他方の端部側に向けて延びるように設けられ、圧電体22の他方主面(下面)に設けられた励振電極21は長手方向の他方の端部から一方の端部側に向けて延びるように設けられ、それぞれ互いに対向する領域を有している。この励振電極21は、例えば金,銀,銅,アルミニウム,クロム,ニッケル等の金属を用いることができ、それぞれ圧電体22の表面に例えば0.1μm〜3μmの厚みに被着される。そして、図に示すように、圧電素子2の両端面には端面電極23が設けられており、この端面電極23,導電性接合材4および第1の支持部31を介して上面の励振電極21が第1容量電極121と電気的に接続されている。また、導電性接合材4および第2の支持部32を介して下面の励振電極21が第2容量電極122と電気的に接続されている。 Further, the excitation electrode 21 provided on one main surface (upper surface) of the piezoelectric body 22 is provided so as to extend from one end portion in the longitudinal direction toward the other end portion side, and is provided on the other main surface (upper surface) of the piezoelectric body 22. The excitation electrode 21 provided on the lower surface) is provided so as to extend from the other end in the longitudinal direction toward one end, and each has a region facing each other. For the excitation electrode 21, for example, a metal such as gold, silver, copper, aluminum, chromium, or nickel can be used, and each of them is adhered to the surface of the piezoelectric body 22 to a thickness of, for example, 0.1 μm to 3 μm. Then, as shown in the figure, end face electrodes 23 are provided on both end faces of the piezoelectric element 2, and the excitation electrodes 21 on the upper surface are provided via the end face electrodes 23, the conductive bonding material 4, and the first support portion 31. Is electrically connected to the first capacitance electrode 121. Further, the excitation electrode 21 on the lower surface is electrically connected to the second capacitance electrode 122 via the conductive bonding material 4 and the second support portion 32.

このような圧電素子2は、一対の励振電極21間に電圧を印加したとき、励振電極21が対向する領域(交差領域)において、特定の周波数で厚み縦振動もしくは厚みすべり振動の圧電振動を発生させるようになっているものである。 When a voltage is applied between the pair of excitation electrodes 21, such a piezoelectric element 2 generates piezoelectric vibration of thickness longitudinal vibration or thickness sliding vibration at a specific frequency in a region (intersection region) where the excitation electrodes 21 face each other. It is designed to let you.

なお、図1、図2(b)に示すように、圧電素子2を覆うように支持基板1の上に蓋体5が設けられていてもよい。蓋体5は、支持基板1の上面の外周部に、例えばエポキシ系やアクリル系の接着剤、リフロー耐熱性の観点から好ましくはエポキシ系の接着剤で接合されている。これにより、支持基板1とともに形成した内部空間に収容されている圧電素子2を外部からの物理的な影響や化学的な影響から保護する機能と、支持基板1とともに形成した空間内への水等の異物の浸入を防ぐための気密封止機能を有している圧電部品100とすることができる。なお、蓋体5の材料として、例えば、ステンレス鋼などの金属、アルミナなどのセラミックス,樹脂,ガラス等を用いることができる。また、エポキシ樹脂等の絶縁性樹脂材料に無機フィラーを25〜80質量%の割合で含有させたものでもよい。 As shown in FIGS. 1 and 2B, the lid 5 may be provided on the support substrate 1 so as to cover the piezoelectric element 2. The lid 5 is bonded to the outer peripheral portion of the upper surface of the support substrate 1 with, for example, an epoxy-based or acrylic-based adhesive, preferably an epoxy-based adhesive from the viewpoint of reflow heat resistance. As a result, the function of protecting the piezoelectric element 2 housed in the internal space formed together with the support substrate 1 from external physical and chemical influences, water in the space formed together with the support substrate 1, etc. The piezoelectric component 100 has an airtight sealing function for preventing the intrusion of foreign matter. As the material of the lid 5, for example, a metal such as stainless steel, ceramics such as alumina, resin, glass, or the like can be used. Further, an insulating resin material such as an epoxy resin may contain an inorganic filler in a proportion of 25 to 80% by mass.

また、図1に示すように、側面電極15、側面電極16は蓋体5の側面まで延びていてもよく、これにより外部回路基板への実装性が向上する。 Further, as shown in FIG. 1, the side electrode 15 and the side electrode 16 may extend to the side surface of the lid body 5, which improves the mountability on the external circuit board.

そして、図3に示すように、導電性接合材4は圧電素子2の下側に位置する第1の領域41とそれ以外の第2の領域42とで密度に差がある。言い換えると、圧電素子2の下側に位置する第1の領域41とそれ以外の第2の領域42とのいずれか一方が疎な領域で他方が密な領域になっている。 As shown in FIG. 3, the conductive bonding material 4 has a density difference between the first region 41 located below the piezoelectric element 2 and the other second region 42. In other words, one of the first region 41 located below the piezoelectric element 2 and the other second region 42 is a sparse region and the other is a dense region.

導電性接合材4が、圧電素子2の下側に位置する第1の領域41とそれ以外の第2の領域42とで密度に差がある構成としては、第1の領域41と第2の領域42とで硬化時の樹脂密度が異なる2種類の接合材を用いることの他、空隙率に差をつけるなどの例が挙げられる。 The first region 41 and the second region 41 have different densities of the conductive bonding material 4 between the first region 41 located below the piezoelectric element 2 and the other second region 42. In addition to using two types of bonding materials having different resin densities at the time of curing in the region 42, there are examples such as making a difference in porosity.

例えば、空隙率に差をつける場合、それぞれの領域の全体に占める空隙部の体積比(空
隙部/(空隙部+導電性樹脂部))を空隙率としたとき、密な領域の空隙率を5%未満、疎な領域の空隙率を5%以上とする。この空隙率は、導電性接合材4の第1の領域41とそれ以外の第2の領域42とを、任意の箇所で切断した断面の走査型電子顕微鏡(SEM)による画像から面積比を求めて算出することができる。
For example, when differentiating the porosity, when the volume ratio of the void portion (void portion / (void portion + conductive resin portion)) to the entire region is taken as the void ratio, the porosity of the dense region is determined. The porosity of less than 5% and sparse areas is 5% or more. For this porosity, the area ratio is obtained from a scanning electron microscope (SEM) image of a cross section of the first region 41 of the conductive bonding material 4 and the other second region 42 cut at an arbitrary position. Can be calculated.

このような構成によれば、導電性接合材4の密な領域によりしっかりと固定され、導電性接合材4の疎な領域により圧電素子2の主振動のダンピングが抑制される。したがって、発振周波数の変動を抑制した、高精度な圧電部品を得ることができる。 According to such a configuration, the conductive bonding material 4 is firmly fixed by the dense region, and the damping of the main vibration of the piezoelectric element 2 is suppressed by the sparse region of the conductive bonding material 4. Therefore, it is possible to obtain a highly accurate piezoelectric component that suppresses fluctuations in the oscillation frequency.

ここで、導電性接合材4は、第2の領域42よりも第1の領域41のほうが密度が低い構成とすることができる。圧電素子2の主振動の振動領域に近い第1の領域41は主振動のダンピング効果への影響力が高い領域であるため、この第1の領域41を第2の領域よりも密度が低く疎な領域にすることで、より導電性接合材4による圧電素子2の主振動のダンピングが抑制され、発振周波数の変動がより抑制できる。 Here, the conductive bonding material 4 can be configured to have a lower density in the first region 41 than in the second region 42. Since the first region 41 close to the vibration region of the main vibration of the piezoelectric element 2 is a region having a high influence on the damping effect of the main vibration, the first region 41 has a lower density than the second region and is sparse. By setting the region, the damping of the main vibration of the piezoelectric element 2 by the conductive bonding material 4 can be suppressed, and the fluctuation of the oscillation frequency can be further suppressed.

また、温度変化による導電性接合材4の熱膨張率が圧電素子2の熱膨張率よりも大きいことから、導電性接合材4と圧電素子2との接合面にかかる応力が変動し、発振周波数も変動する。これに対し、圧電素子2の主振動の振動領域に近い第1の領域41を第2の領域42よりも密度が低く疎な領域にすることで、熱膨張にともなう応力の変動を低減でき、温度変化による発振周波数の変動を抑制できる。 Further, since the coefficient of thermal expansion of the conductive bonding material 4 due to the temperature change is larger than the coefficient of thermal expansion of the piezoelectric element 2, the stress applied to the bonding surface between the conductive bonding material 4 and the piezoelectric element 2 fluctuates, and the oscillation frequency. Also fluctuates. On the other hand, by making the first region 41, which is close to the vibration region of the main vibration of the piezoelectric element 2, a region having a lower density and a sparser region than the second region 42, the fluctuation of stress due to thermal expansion can be reduced. Fluctuations in oscillation frequency due to temperature changes can be suppressed.

そして、図5に示すように、圧電素子2の主振動の振動領域に近い第1の領域41を第2の領域42よりも密度が低く疎な領域としたときに、当該第1の領域41において、支持基板1に近い側の部位411よりも圧電素子2に近い側の部位412のほうが密度が低い構成とすることができる。ここで、支持基板1に近い側の部位411と圧電素子2に近い側の部位412との境界は、第1の領域41の全体厚みtのちょうど半分(t/2)の位置であることとする。第1の領域41において、圧電素子2に近い側の部位412のほうが密度が低く疎な領域となっていることで、導電性接合材4による圧電素子2の主振動のダンピングをより抑制でき、また熱膨張にともなう応力の変動もより抑制できる。 Then, as shown in FIG. 5, when the first region 41 close to the vibration region of the main vibration of the piezoelectric element 2 is set to a region having a lower density and a sparse region than the second region 42, the first region 41 is used. In the above, the density of the portion 412 closer to the piezoelectric element 2 can be lower than that of the portion 411 on the side closer to the support substrate 1. Here, the boundary between the portion 411 on the side closer to the support substrate 1 and the portion 412 on the side closer to the piezoelectric element 2 is located at a position exactly half (t / 2) of the total thickness t of the first region 41. To do. In the first region 41, the portion 412 on the side closer to the piezoelectric element 2 has a lower density and is a sparse region, so that damping of the main vibration of the piezoelectric element 2 by the conductive bonding material 4 can be further suppressed. In addition, fluctuations in stress due to thermal expansion can be further suppressed.

また、図6に示すように、圧電素子2の主振動の振動領域に近い第1の領域41を第2の領域42よりも密度が低く疎な領域としたときに、当該第1の領域41において、平面視したときの外周部413よりも内側部414のほうが密度が低い構成とすることもできる。 Further, as shown in FIG. 6, when the first region 41 close to the vibration region of the main vibration of the piezoelectric element 2 is set to a region having a lower density and a sparse region than the second region 42, the first region 41 In the plan view, the density of the inner portion 414 may be lower than that of the outer peripheral portion 413 when viewed in a plan view.

圧電素子2の振動エネルギーは励振電極21の中央付近が最も大きい。したがって、第1の領域41において、平面視したときの外周部413よりも内側部414のほうが密度が低く疎な領域となっていることで、導電性接合材4による圧電素子2の主振動のダンピングをさらに抑制でき、振動エネルギーの損失を抑制することができる。 The vibration energy of the piezoelectric element 2 is the largest near the center of the excitation electrode 21. Therefore, in the first region 41, the inner portion 414 has a lower density and is a sparse region than the outer peripheral portion 413 when viewed in a plan view, so that the main vibration of the piezoelectric element 2 due to the conductive bonding material 4 is caused. Damping can be further suppressed, and the loss of vibration energy can be suppressed.

次に、圧電部品100の製造方法の一例について説明する。 Next, an example of a method for manufacturing the piezoelectric component 100 will be described.

まず、支持基板1を作製するための多数個取り基板を作製する。例えば、チタン酸鉛、チタン酸ジルコン酸鉛、チタン酸バリウムなどの原料粉末を水や分散剤と共にボールミルを用いて混合した後に、バインダ、可塑剤等を加え、乾燥、整粒する。このようにして得られた原料をプレス成型し、必要により孔加工を施した後、所定温度で脱脂後、例えば900℃〜1600℃のピーク温度で焼成し、所定の厚みに研磨加工を実施する。その後、例えば、銀、ニッケル等の金属粉末とガラスを含む導電性ペーストを印刷し、所定の温度で焼成し、第1容量電極121、第2容量電極122、グランド端子電極13、入出力端子電極14などを形成して支持基板1を得る。 First, a large number of boards for manufacturing the support substrate 1 are manufactured. For example, raw material powders such as lead titanate, lead zirconate titanate, and barium titanate are mixed with water and a dispersant using a ball mill, and then a binder, a plasticizer, and the like are added, and the powder is dried and sized. The raw material thus obtained is press-molded, bored if necessary, degreased at a predetermined temperature, fired at a peak temperature of, for example, 900 ° C. to 1600 ° C., and polished to a predetermined thickness. .. After that, for example, a conductive paste containing a metal powder such as silver or nickel and glass is printed and fired at a predetermined temperature to obtain a first capacitance electrode 121, a second capacitance electrode 122, a ground terminal electrode 13, and an input / output terminal electrode. 14 and the like are formed to obtain the support substrate 1.

得られた支持基板1に、スクリーン印刷等を用いて導電性ペーストによる支持部を厚み1μm〜100μm程度に形成する。具体的には、第1容量電極121の上に例えば金属粉末を樹脂中に分散させて固化させてなるバンプ状の第1の支持部31を設けるとともに、第2容量電極122の上に例えば金属粉末を樹脂中に分散させて固化させてなるバンプ状の第2の支持部32を設ける。 On the obtained support substrate 1, a support portion made of a conductive paste is formed on the obtained support substrate 1 by screen printing or the like to a thickness of about 1 μm to 100 μm. Specifically, a bump-shaped first support portion 31 formed by dispersing, for example, metal powder in a resin and solidifying it is provided on the first capacitance electrode 121, and for example, a metal is provided on the second capacitance electrode 122. A bump-shaped second support portion 32 formed by dispersing the powder in the resin and solidifying it is provided.

次に、圧電素子2を構成する圧電体22は、例えば、原料粉末を水や分散剤と共にボールミルを用いて混合した後に、バインダ、可塑剤等を加え、乾燥、整粒する。このようにして得られた原料をプレス成型後、焼成し、圧電磁器を得る。得られた圧電磁器の端面に電極を形成し、例えば25℃〜300℃の温度にて端面方向に例えば0.4kV/mm〜6kV/mmの電圧をかけて分極処理を行う。 Next, the piezoelectric body 22 constituting the piezoelectric element 2 is, for example, mixed with water and a dispersant using a ball mill, and then dried and sized by adding a binder, a plasticizer, and the like. The raw material thus obtained is press-molded and then fired to obtain a piezoelectric device. An electrode is formed on the end face of the obtained piezoelectric device, and a polarization treatment is performed by applying a voltage of, for example, 0.4 kV / mm to 6 kV / mm in the end face direction at a temperature of, for example, 25 ° C to 300 ° C.

圧電体22の上下面に形成される励振電極21は、得られた圧電体22に、真空蒸着法,PVD法,スパッタリング法等を用いて圧電体22の上下面に金属膜を被着させ、厚みが1μm〜10μm程度のフォトレジスト膜をそれぞれの金属膜上にスクリーン印刷等を用いて形成した後に、フォトエッチングによってパターニングすることによって、形成することができる。パターンニングされた圧電体22を所定のサイズにダイシング等でカットすることにより圧電素子2が作製される。 The excitation electrode 21 formed on the upper and lower surfaces of the piezoelectric body 22 is obtained by coating the obtained piezoelectric body 22 with a metal film on the upper and lower surfaces of the piezoelectric body 22 by using a vacuum deposition method, a PVD method, a sputtering method, or the like. It can be formed by forming a photoresist film having a thickness of about 1 μm to 10 μm on each metal film by screen printing or the like, and then patterning by photoetching. The piezoelectric element 2 is manufactured by cutting the patterned piezoelectric body 22 to a predetermined size by dicing or the like.

次に、導電性接合材4を用いて、圧電素子2を支持基板1の第1の支持部31および第2の支持部32の上に搭載し、固定する。導電性接合材4が金属粉末を樹脂中に分散させてなる導電性接着剤の場合は、ディスペンサ等を用いてこの導電性接着剤を第1の支持部31および第2の支持部32の上に塗布しておいて、圧電素子2を第1の支持部31および第2の支持部32の上に載せ、加熱または紫外線照射により導電性接着剤の樹脂を硬化させればよい。 Next, the piezoelectric element 2 is mounted and fixed on the first support portion 31 and the second support portion 32 of the support substrate 1 by using the conductive bonding material 4. When the conductive bonding material 4 is a conductive adhesive in which metal powder is dispersed in a resin, the conductive adhesive is applied on the first support portion 31 and the second support portion 32 by using a dispenser or the like. The piezoelectric element 2 may be placed on the first support portion 31 and the second support portion 32, and the resin of the conductive adhesive may be cured by heating or irradiation with ultraviolet rays.

ここで、導電性接合材4が、圧電素子2の両端部の下面から端面にかけて接合されており、圧電素子2の下側に位置する第1の領域41とそれ以外の第2の領域42とで密度に差がある構成として、例えば圧電素子2の下側に位置する第1の領域41の密度が低く、それ以外の第2の領域42の密度が高い構成とするには、まず、空気を導入しながら混練した気泡を多く含む導電性接合材4をディスペンサ等を用いて圧電素子2の下側となる部位(第1の領域41に位置する部位)に塗布し、硬化させる。そして、圧電素子2を搭載するとともに、脱泡した導電性接合材4をディスペンサ等を用いてそれ以外の領域(第2の領域42となる部位)に塗布し、硬化させればよい。 Here, the conductive bonding material 4 is bonded from the lower surface to the end surface of both ends of the piezoelectric element 2, and is joined to the first region 41 located below the piezoelectric element 2 and the other second region 42. For example, in order to configure the structure in which the density of the first region 41 located below the piezoelectric element 2 is low and the density of the other second region 42 is high, first, air is used. The conductive bonding material 4 containing a large amount of kneaded air bubbles is applied to a portion below the piezoelectric element 2 (a portion located in the first region 41) using a dispenser or the like, and cured. Then, the piezoelectric element 2 may be mounted, and the defoamed conductive bonding material 4 may be applied to the other region (the portion to be the second region 42) using a dispenser or the like and cured.

また、第1の領域41を第2の領域42よりも密度が低く疎な領域としたときに、当該第1の領域41において、支持基板1に近い側の部位411よりも圧電素子2に近い側の部位412のほうが密度が低い構成とするには、まず、スクリーン印刷などで支持基板1の上面の第1の領域41に位置する部位に脱泡した導電性接合材4を印刷、硬化させる。その上から空気を導入しながら混練した気泡を多く含む導電性接合材4を印刷する。そして、圧電素子2を搭載するとともに、脱泡した導電性接合材4をディスペンサ等を用いてそれ以外の領域(第2の領域42となる部位)に塗布し、硬化させればよい。 Further, when the first region 41 is a region having a lower density than the second region 42 and is sparse, in the first region 41, it is closer to the piezoelectric element 2 than the portion 411 on the side closer to the support substrate 1. In order to make the side portion 412 have a lower density, first, the defoamed conductive bonding material 4 is printed and cured on the portion located in the first region 41 on the upper surface of the support substrate 1 by screen printing or the like. .. The conductive bonding material 4 containing a large amount of kneaded air bubbles is printed while introducing air from above. Then, the piezoelectric element 2 may be mounted, and the defoamed conductive bonding material 4 may be applied to the other region (the portion to be the second region 42) using a dispenser or the like and cured.

また、圧電素子2の主振動の振動領域に近い第1の領域41を第2の領域42よりも密度が低く疎な領域としたときに、当該第1の領域41において、平面視したときの外周部413よりも内側部414のほうが密度が低い構成とするには、まず、目数の多いメッシュを用いてスクリーン印刷などで支持基板1の上面の第1の領域41に位置する部位に脱泡した導電性接合材を印刷、硬化する。その上から空気を導入しながら混練した気泡を多く含む導電性接合材4を、外周部より内側の方が目数の少ないメッシュを用いてスクリー
ン印刷する。そして、圧電素子2を搭載するとともに、脱泡した導電性接合材4をディスペンサ等を用いてそれ以外の領域(第2の領域42となる部位)に塗布し、硬化させればよい。
Further, when the first region 41 close to the vibration region of the main vibration of the piezoelectric element 2 is a region having a lower density than the second region 42 and is sparse, the first region 41 is viewed in a plan view. In order to configure the inner portion 414 to have a lower density than the outer peripheral portion 413, first, a mesh having a large number of meshes is used to remove the density from the portion located in the first region 41 on the upper surface of the support substrate 1 by screen printing or the like. The foamed conductive bonding material is printed and cured. The conductive bonding material 4 containing a large amount of air bubbles kneaded while introducing air from above is screen-printed using a mesh having a smaller number of meshes on the inner side than the outer peripheral portion. Then, the piezoelectric element 2 may be mounted, and the defoamed conductive bonding material 4 may be applied to the other region (the portion to be the second region 42) using a dispenser or the like and cured.

そして、必要により、圧電素子2を覆うようにして、蓋体5の開口周縁面を支持基板1の上面の周縁部に接合する。蓋体5としては、複数の凹部を有する多数個取りの集合蓋体シートを用いて、凹部が圧電素子2を覆うようにして集合蓋体シートを多数個取り基板の上に乗せ、蓋体5の開口周縁面となる集合蓋体シートの凸部を支持基板1の上面の周縁部に接合する。例えば、準備しておいた蓋体5の開口周縁面となる集合蓋体シートの凸部に熱硬化性の絶縁性接着剤を塗布し、蓋体5を支持基板1の上面に載せる。しかる後に、蓋体5または支持基板1を加熱することにより絶縁性接着剤を100〜150℃に温度上昇させて硬化させ、蓋体5を支持基板1の上面に接合する。 Then, if necessary, the opening peripheral surface of the lid 5 is joined to the peripheral edge of the upper surface of the support substrate 1 so as to cover the piezoelectric element 2. As the lid 5, a large number of collective lid sheets having a plurality of recesses are used, and a large number of collective lid sheets are placed on the substrate so that the recesses cover the piezoelectric element 2, and the lid 5 The convex portion of the collective lid sheet, which is the peripheral surface of the opening, is joined to the peripheral edge of the upper surface of the support substrate 1. For example, a thermosetting insulating adhesive is applied to the convex portion of the collective lid sheet which is the opening peripheral surface of the prepared lid body 5, and the lid body 5 is placed on the upper surface of the support substrate 1. After that, the insulating adhesive is heated to 100 to 150 ° C. to cure by heating the lid 5 or the support substrate 1, and the lid 5 is bonded to the upper surface of the support substrate 1.

最後に、各圧電部品(個片)の境界にそってダイシング等で切断した後、個片となった各圧電部品の側面にスクリーン印刷等を用いて導電性ペーストを印刷し、100〜150℃に温度上昇させて硬化させて側面電極15、16を形成することで圧電部品100を得ることができる。なお、この後に側面電極15、16の表面上にNiやAu等のめっきを形成してもかまわない。 Finally, after cutting along the boundary of each piezoelectric component (individual piece) by dicing or the like, a conductive paste is printed on the side surface of each piezoelectric component which has become an individual piece by screen printing or the like, and the temperature is 100 to 150 ° C. The piezoelectric component 100 can be obtained by forming the side electrodes 15 and 16 by raising the temperature to the surface and curing the mixture. After this, plating such as Ni or Au may be formed on the surfaces of the side electrodes 15 and 16.

以上の方法により、本例の圧電部品100が作製される。このような方法によれば、発振周波数の変動が抑制された高精度な圧電部品を作製することができる。 By the above method, the piezoelectric component 100 of this example is manufactured. According to such a method, it is possible to manufacture a highly accurate piezoelectric component in which fluctuation of the oscillation frequency is suppressed.

1:支持基板
11:基板本体
12:容量電極
121:第1容量電極
122:第2容量電極
13:グランド端子電極
14:入出力端子電極
2:圧電素子
21:励振電極
22:圧電体
23:端面電極
31:第1の支持部
32:第2の支持部
4:導電性接合材
41:第1の領域
411:支持基板に近い側の部位
412:圧電素子に近い側の部位
413:外周部
414:内側部
42:第2の領域
5:蓋体
1: Support substrate 11: Substrate body 12: Capacitive electrode 121: First capacitive electrode 122: Second capacitive electrode 13: Ground terminal electrode 14: Input / output terminal electrode 2: Piezoelectric element 21: Exciting electrode 22: Piezoelectric body 23: End face Electrode 31: First support portion 32: Second support portion 4: Conductive bonding material 41: First region 411: Part near the support substrate 412: Part near the piezoelectric element 413: Outer peripheral portion 414 : Inner part 42: Second region 5: Lid

Claims (4)

支持基板と、該支持基板の上に配置された長尺状の圧電素子と、前記支持基板の上面に前記圧電素子の長手方向の両端部をそれぞれ接合して固定している導電性接合材とを備え、
前記導電性接合材は、前記圧電素子の前記両端部の下面から端面にかけて接合されており、前記圧電素子の下側に位置する第1の領域とそれ以外の第2の領域とで密度に差があり、前記導電性接合材は、前記第2の領域よりも前記第1の領域のほうが密度が低いことを特徴とする圧電部品。
A support substrate, a long piezoelectric element arranged on the support substrate, and a conductive bonding material in which both ends of the piezoelectric element in the longitudinal direction are bonded and fixed to the upper surface of the support substrate. With
The conductive bonding material is bonded from the lower surface to the end surface of both ends of the piezoelectric element, and the density differs between the first region located below the piezoelectric element and the other second region. The conductive bonding material is a piezoelectric component characterized in that the density of the first region is lower than that of the second region.
記導電性接合材は、前記第1の領域において、前記支持基板に近い側よりも前記圧電素子に近い側のほうが密度が低いことを特徴とする請求項1に記載の圧電部品。 Before Kishirube conductive bonding material, wherein in the first region, the piezoelectric component according to claim 1, towards the side closer to the piezoelectric element than a side closer to the support substrate, wherein the density is low. 記導電性接合材は、前記第1の領域において、平面視したときの外周部よりも内側部のほうが密度が低いことを特徴とする請求項1または請求項2に記載の圧電部品。 Before Kishirube conductive bonding material, wherein in the first region, the piezoelectric component according to claim 1 or claim 2 towards the inner portion than the outer peripheral portion of the plan view is equal to or lower density. 前記導電性接合材は、前記圧電素子の下側に位置する前記第1の領域とそれ以外の前記第2の領域とが同じ接合材で、空隙率が異なることを特徴とする請求項1乃至請求項3のうちのいずれかに記載の圧電部品。 Claims 1 to 1, wherein the conductive bonding material is a bonding material in which the first region located below the piezoelectric element and the other second region are the same and have different porosities. The piezoelectric component according to any one of claims 3.
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