JP6901328B2 - Indirect heat deposition source - Google Patents

Description

The present invention relates to an indirect heating vapor deposition source in which a container filled with a vapor deposition material is heated by an electron beam impact (bomberd) to heat and evaporate the vapor deposition material.

Conventionally, a vapor deposition apparatus in which a substrate is placed in a vacuum chamber and a vapor deposition source is installed toward the substrate has been known. As an indirect heat vapor deposition source, an electron beam (thermoelectron) is used in a container filled with a vapor deposition material. ) Is emitted (see, for example, Patent Document 1).

In the electron beam impact type vapor deposition source described in Patent Document 1, a variable voltage power supply 22 is connected between the filament 5 and the crucible 1. The variable voltage power supply 22 applies an acceleration voltage to the filament 5 so that the crucible 1 side becomes positive. As a result, the thermions e− emitted from the filament 5 are accelerated and collide with the bottom surface of the crucible 1 to heat the crucible 1. As a result, the evaporative material 2 in the crucible 1 is heated, melted, and evaporated, and the vapor of the evaporative material 2 adheres to the surface of the substrate 17 to form a thin film.

Further, as the indirect heat-deposited source, there is an indirect heat-deposited source 1 as shown in FIG. The indirect heat-deposited source 1 includes a liner 2, a holder 3, and an electron source 6. The liner 2 has an outer liner 11 and an inner liner 12. The outer liner 11 is made of a high melting point material such as molybdenum or ceramics, and is formed in a bottomed tubular shape. Further, the outer liner 11 is held by the holder 3.

The inner liner 12 is formed in a bottomed tubular shape. The diameter of the bottom portion 12a of the inner liner 12 is set to be smaller than the diameter of the bottom portion 11a of the outer liner 11, and the inner liner 12 is housed inside the outer liner 11. The inner liner 12 is filled with the vapor deposition material 4. Therefore, the inner liner 12 is made of a material having low reactivity with the vapor deposition material 4.

The electron source 6 is arranged below the outer liner 11 and has a filament made of a tungsten material. When a predetermined value of current is supplied to the filament from an external heating power source (not shown), the filament is heated to a temperature at which thermoelectron emission is possible by Joule heating.

When the filament is heated to a temperature at which thermoelectrons can be emitted, the thermoelectrons emitted from the filament are accelerated by an electric field, and the outer liner 11 is subjected to electron shock heating. The inner liner 12 is heated by heat conduction or heat radiation from the outer liner 11, and the vapor deposition material 4 is heated by heat conduction or heat radiation from the inner liner 12 and evaporates.

In the indirect heating vapor deposition source 1 as shown in FIG. 1, when the vapor deposition material 4 has high wettability with respect to the inner liner 12, the molten vapor deposition material 4 wets and spreads on the wall surface of the inner liner 12, and outside the inner liner 12. Reach the wall. Then, when the molten film-deposited material 4 reaches the outer wall surface of the inner liner 12, it is heated by the radiant heat from the outer liner 11 and evaporates.

JP-A-2002-371353

However, in the electron shock indirect heating vapor deposition source, since thermions are irradiated from directly below the outer liner 11, the bottom portion of the inner liner 12 is heated most efficiently. Then, the heating efficiency of the wall surface becomes relatively low. When the temperature of the upper part of the outer liner 11 is low, the vaporized material 4 that has reached the outer wall surface of the inner liner 12 does not evaporate due to the radiant heat of the upper part of the outer liner 11, but travels to the lower part through the outer wall surface of the inner liner 12. It gets in.

The vaporized material 4 that has penetrated to the lower part of the inner liner 12 evaporates due to the radiant heat of the lower part of the outer liner 11 and is vaporized on the outer liner 11. As a result, there is a problem that a vapor-deposited material is deposited between the outer liner 11 and the inner liner 12, and the vapor-deposited material and the outer liner 11 cause a chemical reaction, so that the outer liner 11 is eroded.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an indirect heat-deposited source capable of reducing the amount of deposited matter deposited on the outer liner.

One aspect of the indirect thermal thin-film deposition source of the present invention is to heat a container filled with the vapor-deposited material by thermions emitted from the electron source to heat and evaporate the vapor-deposited material, and the outer liner, the inner liner, and electrons. It has a source and a reflector. The inner liner is placed inside the outer liner and is filled with a vapor deposition material. The thermions emitted from the electron source are accelerated and electro-impact heat the outer liner. The reflector is arranged between the inner liner and the outer liner and reflects the radiant heat emitted from the outer liner.

As described above, in one aspect of the present invention, the reflector arranged between the inner liner and the outer liner prevents heat from reaching the inner liner. As a result, the amount of electron irradiation is increased in order to obtain a predetermined vapor deposition rate, and the temperature of the entire outer liner is increased. As a result, the vaporized material reaching the outer wall surface of the inner liner evaporates due to the radiant heat of the upper part of the outer liner. Therefore, it is possible to reduce the amount of deposited matter deposited on the outer liner by preventing the vapor deposition material from entering the lower part of the inner liner 12.

It is a schematic block diagram of the conventional indirect heating vapor deposition source. It is a schematic block diagram of the indirect heat vapor deposition source which concerns on 1st Embodiment of this invention. It is explanatory drawing which shows the structure of the electron source in the indirect heat vapor deposition source which concerns on 1st Embodiment of this invention. It is a schematic block diagram of the indirect heat vapor deposition source which concerns on 1st Embodiment of this invention.

Hereinafter, an example of a mode for carrying out the present invention will be described with reference to the accompanying drawings. In each figure, components having substantially the same function or configuration are designated by the same reference numerals, and duplicate description will be omitted.

<First Embodiment>
[Structure of indirect heat vapor deposition source]
First, the configuration of the indirect heat-deposited source according to the first embodiment will be described with reference to FIG.
FIG. 2 is a schematic configuration diagram of an indirect heat-deposited source according to the first embodiment of the present invention.

The indirect heat-deposited source 21 shown in FIG. 2 is installed in a vacuum chamber, and heats and evaporates the vapor-deposited material filled in the container to vapor-deposit on the substrate.
The indirect heat-deposited source 21 includes a liner 22 showing a first specific example of the container, a holder 3 showing a specific example of the container holding portion, a plurality of reflectors 23, and an electron source 6.

The holder 3 is formed in a circular plate shape and has a holding hole 3a through which the liner 22 penetrates. The material of the holder 3 may be any material having a large thermal resistance. Therefore, it is difficult for the heat of the liner 22 to be transferred to the holder 3. In FIG. 2, the holder 3 has one holding hole 3a, but the holder (container holding portion) according to the present invention has a plurality of holding holes and a plurality of liners (containers). It may be the one that holds.

A rotary drive shaft 14 showing a specific example of the drive mechanism is connected to the central portion of the holder 3. The rotation drive shaft 14 rotationally drives the holder 3 to move the liner 22 held by the holder 3 in the horizontal direction. The rotation drive shaft 14 is cooled so as not to impair the rotation function.

The electron source 6 is arranged below the holder 3 at an arbitrary position on the rotation orbit of the liner 22. As a result, when the liner 22 held in the holder 3 is placed at the vapor deposition position, the liner 22 is located above the electron source 6. The configuration and circuit of the electron source 6 will be described later with reference to FIG.

A substrate holding portion 15 is arranged above the holder 3. The substrate holding portion 15 is formed in a circular plate shape, and holds the substrate 5 on the lower surface. A rotation drive shaft 16 is connected to the center of the upper surface of the substrate holding portion 15. The rotation drive shaft 16 rotationally drives the substrate holding portion 15 to move the substrate 5 held by the substrate holding portion 15 in the horizontal direction. Further, the rotation drive shaft 16 is cooled so as not to impair the rotation function.

When the vapor-deposited film is attached to the substrate 5, the substrate holding portion 15 is rotationally driven by the rotary drive shaft 16 to move the substrate 5 above the liner 22. As a result, when the vapor-deposited material 4 in the liner 22 melts and evaporates, the evaporated particles are deposited on the substrate 5. In FIG. 2, the substrate holding portion 15 holds one substrate 5, but the substrate holding portion according to the present invention may hold a plurality of substrates.

The liner 22 has an outer liner 31 and an inner liner 32. The outer liner 31 is formed in a bottomed tubular shape, and has a circular bottom portion 31a, a peripheral wall portion 31b continuous with the peripheral edge of the bottom portion 31a, and a flange portion 31c continuous with the upper end of the peripheral wall portion 31b. There is. Examples of the material of the outer liner 31 include high melting point materials such as tamolybdenum and ceramics.

A recess 34 for a reflector is formed in the bottom portion 31a of the outer liner 31. A plurality of reflectors 23 are arranged in the reflector recess 34. The reflector recess 34 is provided on the inner surface of the bottom portion 31a, and is formed in a circular shape when viewed from above. Further, a mounting portion (not shown) on which the bottom portion 32a described later of the inner liner 32 is mounted is formed on the bottom portion 31a of the outer liner 31.

The peripheral wall portion 31b of the outer liner 31 penetrates the holding hole 3a of the holder 3. Further, the flange portion 31c of the outer liner 31 engages with the upper surface of the holder 3. As a result, the outer liner 31 is held by the holder 3. By engaging the flange portion 31c with the upper surface of the holder 3 in this way, the contact area between the outer liner 31 and the holder 3 can be reduced, and heat loss due to heat conduction from the outer liner 31 to the holder 3 can be reduced. Can be reduced.

The inner liner 32 is formed in a bottomed tubular shape, and has a bottom portion 32a and a peripheral wall portion 32b continuous with the peripheral edge of the bottom portion 32a. The diameter of the bottom portion 32a of the inner liner 32 is set to be smaller than the diameter of the bottom portion 31a of the outer liner 31, and the inner liner 32 is housed inside the outer liner 31.

The inner liner 32 is filled with the vapor deposition material 4. As the material of the inner liner 32, a material having low reactivity with the vapor deposition material 4 is preferable. For example, when an aluminum material is applied as the vapor deposition material 4, carbon, which is a ceramic having relatively low reactivity with the aluminum material, can be applied as the material of the inner liner 32.

The bottom portion 32a of the inner liner 32 is mounted on a mounting portion (not shown) of the outer liner 31. As a result, the outer surface of the bottom portion 32a of the inner liner 32 faces the reflector recess 34 of the outer liner 31. Further, a gap of an appropriate distance (for example, 1 to 3 mm) is formed between the peripheral wall portion 32b of the inner liner 32 and the peripheral wall portion 31b of the outer liner 31. Therefore, the inner liner 32 is in contact with the outer liner 31 only at the bottom portion 32a.

In a state where the inner liner 32 is housed inside the outer liner 31, the upper end of the inner liner 32 (the upper end of the peripheral wall portion 32b) protrudes upward from the upper end of the outer liner 31 (flange portion 31c). As a result, it is possible to suppress or prevent the molten film-deposited material 4 from being vapor-deposited on the outer liner 31, and it is possible to prevent vapor contamination of the outer liner 31.

The inner liner 32 is heated by heat conduction with a mounting portion (not shown) of the outer liner 31 and radiant heat from the outer liner 31. The vaporized material 4 is mainly heated by heat conduction with the inner liner 32, and when the temperature is raised above the evaporable temperature, the vapor deposition is started. At this time, the temperature of the inner liner 32 reaches, for example, 1200 ° C. or higher, and the temperature of the outer liner 31 reaches higher than that.

For example, when the inner liner 32 is filled with an aluminum material as the vapor deposition material 4, the aluminum material melts and starts evaporation. Then, the generated evaporated particles move in the vacuum and are deposited on the surface of the substrate 5 held by the substrate holding portion 15 facing the inner liner 32. As a result, a thin-film deposition film having a desired thickness adheres to the substrate 5. The adhesion rate of the vapor-deposited film on the substrate 5 can be set to a desired value by adjusting the temperature of the inner liner 32 to control the amount of evaporated particles.

The plurality of reflectors 23 are arranged in the reflector recesses 34 of the outer liner 31. Each reflector 23 is formed in a disk shape having a diameter substantially equal to that of the reflector recess 34, and the plane faces in the vertical direction. The bottom portion 31a of the outer liner 31 and the bottom portion 32a of the inner liner 32 face each other in the vertical direction. The plurality of reflectors 23 are arranged at appropriate intervals in the vertical direction.

The reflector recess 34 is provided with a holding portion that holds a part of the peripheral edge of the reflector 23. Further, a notch is formed on the peripheral edge of the reflector 23 to avoid interference with the holding portion provided in the reflector recess 34. As a result, in the reflector recess 34, a plurality of reflectors can be arranged at appropriate intervals in the vertical direction. As the material of the plurality of reflectors 23, those having high reflectance and low emissivity are preferable, and examples thereof include tungsten and molybdenum.

FIG. 3 is an explanatory diagram showing the configuration of the electron source 6 in the indirect heat-deposited source 21.
As shown in FIG. 3, the electron source 6 has a filament 7 and a Wenelt 8 forming an electric field distribution. The Wenelt 8 is formed with an opening for exposing the filament 7.

The filament 7 is formed of a wire rod made of a tungsten material. An acceleration power supply 10 is connected to the filament 7 via a filament power supply 9. The acceleration power supply 10 is grounded, and a high voltage negative with respect to the ground potential, for example, a voltage of 300 V to 6 kV is applied. The holder 3 has a ground potential, and the liner 22 (outer liner 31) held in the holder 3 has a ground potential. When a predetermined value of current is supplied to the filament 7, the filament 7 is heated to a temperature at which thermoelectrons can be supplied by Joule heating, for example, around 2300 ° C.

When a high voltage negative with respect to the ground potential is applied by the acceleration power supply 10, the thermions emitted from the filament 7 accelerate toward the outer liner 31 having the ground potential, and the outer liner 31 is subjected to electron shock heating.

For example, when the liner 22 (inner liner 32) is filled with an aluminum material as the vapor deposition material 4, the aluminum material melts and starts evaporation. Then, the generated evaporated particles move in a vacuum and are deposited on the surface of the substrate 5 held by the substrate holding portion 15 facing the liner 2. As a result, a thin-film deposition film having a desired thickness adheres to the substrate 5. The adhesion rate (deposition rate) of the vapor-deposited film on the substrate 5 can be set to a desired value by adjusting the temperature of the liner 22 (inner liner 32) to control the amount of evaporated particles.

When the inner liner 32 is filled with the highly wettable vapor deposition material 4, the melted vapor deposition material 4 wets and spreads from the peripheral wall portion 31b of the inner liner 32, extends beyond the upper end of the inner liner 32 to the outer surface of the peripheral wall portion 31b. To reach.

On the other hand, a plurality of reflectors 23 are arranged in the reflector recess 34 of the outer liner 31. Therefore, the radiant heat emitted from the bottom portion 31a of the outer liner 31 is reflected by the plurality of reflectors 23, and the arrival of heat on the bottom portion 32a of the inner liner 32 is suppressed.

In a state where the heat reaching the bottom 32a of the inner liner 32 is suppressed, in order to set the adhesion rate (deposition rate) of the vapor deposition film to a predetermined value, a large amount of radiant heat emitted from the bottom 31a of the outer liner 31 is required. There is a need to. Therefore, the value of the filament current supplied from the filament power supply 9 is increased to increase the amount of thermionic irradiation on the bottom portion 31a of the outer liner 31. As a result, the temperature of the entire outer liner 31 becomes high.

Therefore, the vaporized material 4 that has reached the outer surface of the peripheral wall portion 31b of the inner liner 32 is heated by the radiant heat from the peripheral wall portion 31b of the outer liner 31 and evaporates. As a result, it is possible to suppress or prevent the inner liner 32 from entering the lower part of the outer surface of the peripheral wall portion 32b, and it is possible to reduce the amount of deposited deposit on the outer liner 31.

By providing the plurality of reflectors 23 between the outer liner 31 and the inner liner 32 in this way, the heating efficiency of the bottom portion 32a of the inner liner 32 is lowered, and the heating efficiency of the peripheral wall portion 31b of the outer liner 31 is increased. As a result, the vaporized material 4 that gets over the upper end of the inner liner 32 can be evaporated before entering the lower part of the outer surface of the peripheral wall portion 32b of the inner liner 32, thereby suppressing the deposition of the deposited material on the outer liner 31 or. Can be prevented. Then, by suppressing the deposition of the vapor-deposited material on the outer liner 31, the deterioration of the outer liner 31 due to the chemical reaction with the vapor-deposited material can be suppressed, and the life of the apparatus (indirect heat-deposited source) can be extended. ..

The indirect heat-deposited source according to the present invention is not limited to providing a plurality of reflectors, and may be configured to provide one reflector. When a plurality of reflectors are provided, the amount of heat transferred to the inner liner 32 decreases in proportion to the number of reflectors.

<Second embodiment>
[Structure of indirect heat vapor deposition source]
Next, the configuration of the indirect heat-deposited source according to the second embodiment will be described with reference to FIG.
FIG. 4 is a schematic configuration diagram of an indirect heat-deposited source according to a second embodiment of the present invention.

The indirect heat-deposited source 41 according to the second embodiment has the same configuration as the indirect heat-deposited source 21 (see FIG. 2) according to the first embodiment, and the difference is the structure of the liner. Therefore, here, the liner 42 of the indirect heat-deposited source 41 will be described, and the description of the same configuration as the indirect heat-deposited source 21 (see FIG. 2) will be omitted.

As shown in FIG. 4, the indirect heat-deposited source 41 includes a liner 42 showing a second specific example of the container, a holder 3, a plurality of reflectors 23, a plurality of outer reflectors 24, and an electron source 6. ing.

The liner 42 has an outer liner 51, an inner liner 52, and a holding member 53. The outer liner 51 is formed in a bottomed tubular shape, and has a circular bottom portion 51a and a peripheral wall portion 51b continuous with the peripheral edge of the bottom portion 51a. Examples of the material of the outer liner 51 include high melting point materials such as molybdenum and ceramics.

A recess 54 for a reflector is formed in the bottom portion 51a of the outer liner 51. A plurality of reflectors 23 are arranged in the reflector recess 54. The reflector recess 54 is provided on the inner surface of the bottom portion 51a, and is formed in a circular shape when viewed from above. Further, a mounting portion (not shown) on which the bottom portion 52a of the inner liner 52, which will be described later, is mounted is formed on the bottom portion 51a of the outer liner 51.

Further, an engaging step portion 55 is provided on the outer surface of the bottom portion 51a of the outer liner 51. The engaging step portion 55 is formed on the peripheral edge portion of the bottom portion 51a, and engages with the bottom portion 53a of the holding member 53, which will be described later.

The inner liner 52 is formed in a bottomed tubular shape, and has a bottom portion 52a and a peripheral wall portion 52b continuous with the peripheral edge of the bottom portion 52a. The diameter of the bottom portion 52a of the inner liner 52 is set to be smaller than the diameter of the bottom portion 51a of the outer liner 51, and the inner liner 52 is housed inside the outer liner 51.

The inner liner 52 is filled with the vapor deposition material 4. As the material of the inner liner 52, a material having low reactivity with the vapor deposition material 4 is preferable. The bottom portion 52a of the inner liner 52 is mounted on a mounting portion (not shown) of the outer liner 51. As a result, the outer surface of the bottom portion 52a of the inner liner 52 faces the reflector recess 54 of the outer liner 51. Further, a gap of an appropriate distance (for example, 1 to 3 mm) is formed between the peripheral wall portion 52b of the inner liner 52 and the peripheral wall portion 31b of the outer liner 51. Therefore, the inner liner 52 is in contact with the outer liner 51 only at the bottom portion 52a.

In a state where the inner liner 52 is housed inside the outer liner 51, the upper end of the inner liner 52 (the upper end of the peripheral wall portion 52b) protrudes upward from the upper end of the outer liner 51 (flange portion 31c). As a result, it is possible to suppress or prevent the molten-film vapor deposition material 4 from being vapor-deposited on the outer liner 51, and it is possible to prevent vapor contamination of the outer liner 51.

The inner liner 52 is heated by heat conduction with a mounting portion (not shown) of the outer liner 51 and radiant heat from the outer liner 51. The vaporized material 4 is mainly heated by heat conduction with the inner liner 52, and when the temperature rises above the evaporable temperature, the vapor deposition starts. At this time, the temperature of the inner liner 52 reaches, for example, 1200 ° C. or higher, and the temperature of the outer liner 51 reaches higher than that.

The holding member 53 is formed in a bottomed tubular shape, and has a circular bottom portion 53a, a peripheral wall portion 53b continuous with the peripheral edge of the bottom portion 53a, and a flange portion 53c continuous with the upper end of the peripheral wall portion 53b. There is. Examples of the material of the holding member 53 include molybdenum and ceramics.

A circular through hole 56 is formed in the bottom portion 53a of the holding member 53. The bottom portion 51a of the outer liner 51 is inserted into the through hole 56. The bottom portion 51a of the outer liner 51 faces the electron source 6 arranged below the holding member 53. The indirect heat-deposited source according to the present invention may have a structure in which the bottom portion 51a of the outer liner 51 penetrates through the through hole 56 of the holding member 53.

The peripheral wall portion 53b of the holding member 53 penetrates the holding hole 3a of the holder 3. Further, the flange portion 53c of the holding member 53 engages with the upper surface of the holder 3. As a result, the holding member 53 is held by the holder 3.

The plurality of reflectors 23 are arranged in the reflector recesses 54 of the outer liner 51. Each reflector 23 is formed in a disk shape having a diameter substantially equal to that of the reflector recess 54, and the plane faces in the vertical direction. The plurality of reflectors 23 are arranged at appropriate intervals in the vertical direction.

The plurality of outer reflectors 24 are placed on the bottom portion 53a of the holding member 53, and are interposed between the peripheral wall portion 51b of the outer liner 51 and the peripheral wall portion 53b of the holding member 53. The plurality of outer reflectors 24 are each formed in a cylindrical shape, and each has a different diameter. The diameter of the outer reflector 24 is larger than the outer diameter of the outer liner 51 and smaller than the inner diameter of the holding member 53. The plurality of outer reflectors 24 are arranged at appropriate intervals in the radial direction of the outer liner 51 (holding member 53).

Similar to the first embodiment, in the second embodiment as well, a plurality of reflectors 23 are arranged in the reflector recess 54 of the outer liner 51. Therefore, the radiant heat emitted from the bottom portion 51a of the outer liner 51 is reflected by the plurality of reflectors 23, and the arrival of heat on the bottom portion 52a of the inner liner 52 is suppressed.

In a state where the heat reaching the bottom 52a of the inner liner 52 is suppressed, in order to set the adhesion rate (deposition rate) of the vapor-deposited film to a predetermined value, a large amount of radiant heat emitted from the bottom 51a of the outer liner 51 is required. There is a need to. Therefore, the value of the filament current supplied from the filament power source 9 of the electron source 6 is increased to increase the irradiation amount of thermions on the bottom portion 51a of the outer liner 51. As a result, the temperature of the entire outer liner 51 becomes high.

Further, a plurality of outer reflectors 24 are interposed between the peripheral wall portion 51b of the outer liner 51 and the peripheral wall portion 53b of the holding member 53. As a result, the plurality of outer reflectors 24 reflect the radiant heat emitted from the peripheral wall portion 51b of the outer liner 51, so that the heat retaining effect of the peripheral wall portion 51b can be obtained, the temperature drop is suppressed, and the outer liner is suppressed. The temperature of the whole 51 becomes high.

Therefore, the vaporized material 4 that has reached the outer surface of the peripheral wall portion 51b of the inner liner 52 is heated by the radiant heat from the peripheral wall portion 51b of the outer liner 51 and evaporates. As a result, it is possible to suppress or prevent the inner liner 52 from entering the lower part of the outer surface of the peripheral wall portion 52b, and it is possible to reduce the amount of deposited deposit on the outer liner 51.

By providing the plurality of reflectors 23 between the outer liner 51 and the inner liner 52 in this way, the heating efficiency of the bottom portion 52a of the inner liner 52 is lowered, and the heating efficiency of the peripheral wall portion 51b of the outer liner 51 is increased. Further, by providing a plurality of outer reflectors 24 between the outer liner 51 and the holding member 53, the heat retaining effect of the outer liner 51 can be obtained.

As a result, the vaporized material 4 that gets over the upper end of the inner liner 52 can be evaporated before entering the lower part of the outer surface of the peripheral wall portion 52b of the inner liner 52, thereby suppressing the deposition of the deposited material on the outer liner 51 or. Can be prevented. Then, by suppressing the deposition of the vapor-deposited material on the outer liner 51, the deterioration of the outer liner 51 due to the chemical reaction with the vapor-deposited material can be suppressed, and the life of the apparatus (indirect heat-deposited source) can be extended. ..

In the second embodiment, the present invention is not limited to providing a plurality of reflectors and outer reflectors, and one reflector or one outer reflector may be provided. When a plurality of reflectors are provided, the amount of heat transferred to the inner liner 52 decreases in proportion to the number of reflectors. Further, when a plurality of outer reflectors are provided, the heat retaining effect of the outer liner 51 increases in proportion to the number of the outer reflectors.

In a state where the plurality of outer reflectors 24 are mounted on the bottom portion 53a of the holding member 53, the height of the upper ends of the plurality of outer reflectors 24 is preferably equal to or less than the height of the upper ends of the outer liner 51. For example, when the height of the upper ends of the plurality of outer reflectors 24 is higher than the height of the upper ends of the outer liner 51, the heat retaining effect of the outer liner 51 is enhanced. However, the molten film-deposited material 4 may be vapor-deposited on the outer reflector 24, contaminating the outer reflector 24.

On the other hand, when the height of the upper ends of the plurality of outer reflectors 24 is equal to or less than the height of the upper ends of the outer liner 51, the molten vapor deposition material 4 is deposited on the outer reflector 24 while ensuring the heat retaining effect of the outer liner 51. It can be suppressed or prevented from being deposited.

<3. Modification example>
The embodiment of the present invention has been described above. However, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the invention described in the claims.

For example, in the first and second embodiments described above, the reflector is arranged between the bottom of the outer liner and the bottom of the inner liner. However, as the indirect heat-deposited source according to the present invention, a position where a reflector is provided is appropriately set between the outer liner and the inner liner as long as it does not hinder the radiant heat that evaporates the vaporized material that passes over the upper end of the inner liner. can do. For example, a reflector may be interposed between the peripheral walls of both.

As the indirect heat-deposited source according to the present invention, a reflector is arranged between the electron-irradiated portion of the outer liner that is irradiated with thermions and the facing portion of the inner liner that faces the electron-irradiated portion of the outer liner. Is preferable. Thereby, the heating efficiency of the inner liner can be easily lowered.

Further, in the first and second embodiments described above, the rotary drive shaft 14 is applied as the moving mechanism. However, the moving mechanism according to the present invention is not limited to the mechanism for rotating the holder 3, and may be any mechanism for moving the holder and the liner. As the moving mechanism according to the present invention, for example, a linear moving mechanism for linearly moving the holder and the liner may be adopted. In this case, the electron source is located below the holder at any position on the liner's orbit.

Further, in the second embodiment described above, the holding member 53 on which the plurality of outer reflectors 24 are placed constitutes a part of the liner 42. However, the plurality of outer reflectors according to the present invention may face the outer wall surface of the outer liner, and may be held by the holder 3, for example. This can be realized by integrally forming the holding member in the second embodiment with the holder 3.

3 ... Holder, 4 ... Evaporated material, 5 ... Substrate, 6 ... Electron source, 7 ... Filament, 8 ... Wenelt, 9 ... Filament power supply, 10 ... Acceleration Power supply, 21,41 ... Indirect heating vapor deposition source, 22,42 ... Liner (container), 31,51 ... Outer liner, 32,52 ... Inner liner, 14 ... Rotary drive shaft, 15 ... Substrate holder, 16 ... Rotation drive shaft, 22 ... Liner (container), 23 ... Reflector, 24 ... Outer reflector, 34, 54 ... Reflector recess, 53.・ ・ Holding member, 55 ・ ・ ・ Engagement step, 56 ・ ・ ・ Through hole

Claims (5)

In an indirect heating vapor deposition source in which a container filled with a vapor deposition material is heated by thermions emitted from an electron source to heat and evaporate the vapor deposition material.
Outer liner and
An inner liner that is placed inside the outer liner and is filled with the vapor deposition material,
With the electron source that supplies electrons for electron impact heating of the outer liner,
A reflector arranged between the inner liner and the outer liner and reflecting radiant heat emitted from the outer liner is provided .
The reflector is an indirect heat-deposited source characterized in that it is arranged between an electron-irradiated portion of the outer liner to which the thermoelectrons are irradiated and a portion of the inner liner facing the electron-irradiated portion. .. A plurality of the reflectors are provided, and the reflectors are provided.
The indirect heat-deposited source according to claim 1, wherein the plurality of reflectors are arranged at an appropriate distance. The indirect heat-deposited source according to claim 1 or 2 , further comprising an outer reflector facing the outer wall surface of the outer liner. The indirect heat-deposited source according to claim 3 , wherein the height of the upper end of the outer reflector is equal to or less than the height of the upper end of the outer liner. The indirect heat-deposited source according to claim 1, wherein the electron source heats the outer liner by accelerating thermions and irradiating the outer liner.

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