JP6918211B2 - Manufacturing method of substrate processing equipment and semiconductor equipment - Google Patents

Description

The present invention relates to a hearth structure of a substrate processing apparatus, and particularly to a heat resistance countermeasure technique for the hearth.

It is known that there is a semiconductor manufacturing apparatus as an example of a substrate processing apparatus, and there is a vertical type apparatus as an example of a semiconductor manufacturing apparatus. As this type of substrate processing apparatus, a wafer, that is, a boat as a substrate holding member for holding the substrates in multiple stages is provided in the reaction tube, and the substrates are processed in a processing chamber in the reaction tube while holding the plurality of substrates. It is known that there is something to do. In the vertical device, a plurality of boards are vertically arranged and held by a board holding member, and carried into the processing chamber. After that, the processing gas is introduced into the processing chamber in a state where the substrate is heated by a superheater such as a heater installed outside the processing chamber, and a thin film forming treatment or the like is performed on the substrate.

In Patent Document 1, such a substrate processing apparatus is made of opaque quartz for reducing the influence of heat from the substrate, the substrate holding member, and the heating device, and preventing the sealing member such as the O-ring from being burnt. A structure has been proposed in which the cylindrical heat shield ring is arranged diagonally above the O-ring.

Japanese Unexamined Patent Publication No. 2011-3689

In the reaction tube of the substrate processing device, a reaction tube fixing ring is used when connecting to the furnace port parts, and the reaction tube fixing ring is provided with a cooling water flow path, and the reaction tube and the furnace port portion are provided. It fulfills the cooling function for the O-ring part installed between them. However, if the diameter of the exhaust pipe of the reaction pipe is increased for the purpose of improving the exhaust efficiency in the reaction pipe, the flange on the bottom surface and the exhaust pipe may become close to each other, and the reaction pipe fixing ring may not be provided under the exhaust pipe. be. In this case, the cooling function of the O-ring under the exhaust pipe deteriorates, and it becomes necessary to limit the temperature. It is difficult to provide a cylindrical shielding ring as described in Patent Document 1 under the exhaust pipe.

An object of the present invention is to solve the above-mentioned problems and to provide a configuration capable of suppressing a temperature rise of an O-ring portion under an exhaust pipe even when the diameter of the exhaust pipe is widened.

According to one aspect of the present invention, a substrate holder for arranging and holding a plurality of substrates, a tubular inner tube having an opening at which the substrate holder can be taken in and out below, and a tubular inner tube whose upper end is closed and on the outer periphery of the lower end. A reaction tube having a tubular outer tube provided with a flange and configured to surround the inner tube, a furnace body surrounding the upper and side sides of the reaction tube, a heater for heating the inside of the furnace body, and a flange A mating member connected via a sealing member, a heat insulating structure arranged between the substrate holder and the mating member, and a gas supply mechanism for supplying gas to a plurality of substrates held in the reaction tube. The reaction pipe is provided near the flange at a position facing the exhaust pipe along the outer surface of the inner pipe and the exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe with the outside of the outer pipe. A configuration with a dispersal plate is provided.

By installing a scattering plate that suppresses radiation from the heater, it is possible to efficiently suppress the temperature rise of the quartz reaction tube and the portion under the exhaust pipe of the seal member arranged under the furnace opening.

It is a figure which shows one structural example of the vertical heat treatment apparatus to which this invention is applied. It is a schematic diagram for demonstrating the subject of the substrate processing apparatus of this invention. It is a figure which shows the main part of the substrate processing apparatus which concerns on Example 1. FIG. It is a figure which shows the main part of the substrate processing apparatus which concerns on Example 2. FIG.

Hereinafter, embodiments for carrying out the present invention will be sequentially described with reference to the drawings. First, as an example of a substrate processing apparatus to which the present invention is applied, a configuration of a vertical heat treatment apparatus and its problems will be described with reference to FIGS. 1 and 2. explain.

As shown in FIG. 1, the substrate processing apparatus 1 is configured as a vertical heat treatment apparatus that carries out a heat treatment step in manufacturing a semiconductor integrated circuit, and includes a processing furnace 2. The processing furnace 2 has a heater 3 in order to heat it uniformly. The heater 3 has a cylindrical shape and is supported by a heater base as a holding plate so that the heater 3 is installed perpendicularly to the installation floor of the substrate processing device 1. The heater 3 also functions as an activation mechanism for exciting the gas with heat.

A reaction tube 4 constituting a reaction vessel is arranged inside the heater 3. The reaction tube 4 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end open. The reaction tube 4 has a double tube structure having an outer tube 4A and an inner tube 4B coupled to each other at the lower end flange 4C. The upper ends of the outer pipe 4A and the inner pipe 4B are closed, and the lower end of the inner pipe 4B is open. The flange 4C has an outer diameter larger than that of the outer tube 4A and projects outward. An exhaust port 4D communicating with the inside of the outer tube 4A is provided near the lower end of the reaction tube 4, and the entire reaction tube 4 is integrally formed of a single material such as quartz. The double structure composed of the outer tube 4A and the inner tube 4B is not limited to an integral structure in which the two are coupled to each other, and may be a separable structure.

The manifold 5 has a cylindrical or truncated cone shape and is made of metal or quartz, and is provided so as to support the lower end of the reaction tube 4. The inner diameter of the manifold 5 is formed to be larger than the inner diameter of the reaction tube 4, that is, the inner diameter of the flange 4C. As a result, an annular space is formed between the flange 4C at the lower end of the reaction tube 4 and the seal cap 19. Members of this space or its surroundings are collectively referred to as the furnace opening.

The inner pipe 4B has a main exhaust port 4E that communicates the inside and the outside on the side surface of the reaction pipe behind the exhaust port 4D, and has a supply slit 4F at a position opposite to the main exhaust port 4E. .. The main exhaust port 4E is a single vertically long opening that opens with respect to the region where the wafer 7 is arranged. The supply slits 4F are slits extending in the circumferential direction, and a plurality of supply slits 4F are provided side by side in the vertical direction so as to correspond to each wafer 7. In the space between the outer pipe 4A and the inner pipe 4B (hereinafter referred to as the exhaust space S), one or more nozzles 8 for supplying a processing gas such as a raw material gas are provided corresponding to the position of the supply slit 4F. Has been done. A gas supply pipe 9 for supplying processing gas is connected to the nozzle 8 through the manifold 5.

The inner pipe 4B is further provided with a plurality of sub-exhaust ports 4G for communicating the processing chamber 6 and the exhaust space S at a position deeper than the exhaust port 4D and on the opening side of the main exhaust port 4E. Be done. Further, the flange 4C is also formed with a plurality of bottom exhaust ports 4H and the like that communicate the processing chamber 6 and the lower end of the exhaust space S. In other words, the lower end of the exhaust space S is closed by the flange 4C except for the bottom exhaust port 4H and the like. The sub-exhaust port 4G and the bottom exhaust port 4H mainly function to exhaust the shaft purge gas described later.

A mass flow controller (MFC) 10 which is a flow rate controller and a valve 11 which is an on-off valve are provided on the flow path of the gas supply pipe 9 in order from the upstream direction. On the downstream side of the valve 11, the gas supply pipe 12 for supplying the inert gas is connected to the gas supply pipe 9. The gas supply pipe 12 is provided with an MFC 13 and a valve 14 in this order from the upstream direction. Mainly, the gas supply pipe 9, the MFC 10, and the valve 11 constitute a processing gas supply unit that is a processing gas supply system. As described above, using the gas supply mechanism including the nozzle 8, the gas supply pipes 9, 12, MFC 10, 13, the valves 11, 14, and the like, the substrate processing apparatus shown in FIG. 1 uses the first raw material gas. A first step of supplying the plurality of substrates, a second step of supplying the purge gas to the plurality of substrates, a third step of supplying the second raw material gas to the plurality of substrates, and a third step of supplying the purge gas to the plurality of substrates. The substrate processing is executed by sequentially repeating the fourth step of supplying to.

The nozzle 8 is provided in the gas supply space 4 so as to rise from the lower part of the reaction tube 4. One or a plurality of nozzle holes 8H for supplying gas are provided on the side surface and the upper end of the nozzle 8. The plurality of nozzle holes 8H can be opened so as to face the center of the reaction tube 4 corresponding to the respective openings of the supply slits 4F, so that gas can be injected through the inner tube 4B toward the wafer 7. can.

An exhaust pipe 15 for exhausting the atmosphere in the processing chamber 6 is connected to the exhaust port 4D. In the exhaust pipe 15, a vacuum pump 18 as a vacuum exhaust device is provided via a pressure sensor 16 as a pressure detector for detecting the pressure in the processing chamber 6 and an APC (Auto Pressure Controller) valve 17 as a pressure adjusting unit. It is connected. The APC valve 17 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 6 by opening and closing the valve while the vacuum pump 18 is operating. Further, the pressure in the processing chamber 6 can be adjusted by adjusting the valve opening degree based on the pressure information detected by the pressure sensor 16 while the vacuum pump 18 is operated. ..

Below the manifold 5, a seal cap 19 is provided as a furnace palate body that can airtightly close the lower end opening of the manifold 5. The seal cap 19 is made of a metal such as stainless steel or a nickel-based alloy, and is formed in a disk shape. An O-ring 19A as a sealing member that comes into contact with the lower end of the manifold 5 is provided on the upper surface of the sealing cap 19. As the sealing member, the O-ring can be installed on the upper surface of the manifold 5 so as to be in contact with the lower end of the flange 4C. A cover plate 20 that protects the seal cap 19 is installed on the upper surface of the seal cap 19 with respect to a portion inside the lower end inner circumference of the manifold 5. The cover plate 20 is made of a heat-resistant and corrosion-resistant material such as quartz, sapphire, or SiC, and is formed in a disk shape.

The boat 21 as a substrate holder supports a plurality of wafers, for example, 25 to 200 wafers 7, in a horizontal position and vertically aligned with each other in a multi-stage manner. There, the wafers 7 are arranged at regular intervals. The boat 21 is made of a heat resistant material such as quartz or SiC. It may be desirable for the reaction tube 4 to have a minimum inner diameter that allows the boat 21 to be safely loaded and unloaded.

A heat insulating assembly 22 is arranged below the boat 21. The heat insulating assembly 22 has a structure in which heat conduction or transfer in the vertical direction is reduced, and usually has a cavity inside. The interior can be purged with a shaft purge gas. In the reaction tube 4, the upper portion where the boat 21 is arranged is referred to as a processing region A, and the lower portion where the heat insulating assembly 22 is arranged is referred to as a heat insulating region B.

A rotation mechanism 23 for rotating the boat 21 is installed on the side of the seal cap 19 opposite to the processing chamber 6. A gas supply pipe 24 for the shaft purge gas is connected to the rotation mechanism 23. The gas supply pipe 44c is provided with an MFC 25 and a valve 26 in this order from the upstream direction.

The boat elevator 27 is vertically provided below the outside of the reaction tube 4 and operates as an elevating / lowering / conveying mechanism for raising / lowering the seal cap 19. As a result, the boat 21 and the wafer 7 supported by the seal cap 19 are carried in and out of the processing chamber 6. While the seal cap 19 is lowered to the lowest position, a shutter that closes the lower end opening of the reaction tube 4 may be provided instead of the seal cap 19.

A temperature detector 28 is installed on the outer wall of the outer pipe 4A. The temperature detector 28 may be composed of a plurality of thermocouples arranged side by side. By adjusting the degree of energization of the heater 3 based on the temperature information detected by the temperature detector 28, the temperature in the processing chamber 6 becomes a desired temperature distribution.

The controller 29 is a computer that controls the entire substrate processing device 1, and is an MFC 10, 13, valves 11, 14, pressure sensors 16, APC valves 17, vacuum pump 18, heater 3, temperature detector 28, rotation mechanism 23, and boat. It is electrically connected to the elevator 27 and the like to receive signals from them and control them.

Although not shown in FIG. 1, in the substrate processing apparatus 1, the furnace opening constitutes an annular space between the reaction tube 4, the flange 4C at the lower end thereof, and the seal cap 19 which is the lid of the furnace opening portion. A reaction tube fixing ring is used to connect the parts. The substrate processing apparatus 1 using the reaction tube fixing ring 29 is schematically shown in FIGS. 2A and 2B as a vertical sectional view and a horizontal sectional view thereof. When heating is performed using the heater 3 in the substrate processing device 1, the temperature of the O-ring installed between the lower end of the flange and the manifold of the furnace port portion to be sectioned becomes high. Therefore, a cooling water flow path (not shown) is provided inside the reaction tube fixing ring 29, and functions to cool the O-ring portion installed between the flange and the manifold. However, when the exhaust diameter of the reaction pipe 4, that is, the diameter of the exhaust pipe 15 is increased for the purpose of improving the exhaust efficiency in the reaction pipe, the seal cap 19 and the exhaust pipe 15 are close to each other as schematically shown in FIG. Therefore, the reaction pipe fixing ring 29 cannot be provided under the exhaust pipe 15 of the exhaust port. In this case, since the cooling function of the exhaust port, that is, the O-ring located under the exhaust pipe 15, is deteriorated, it is necessary to limit the temperature of heating by the heater. Hereinafter, various examples of the present invention for solving this problem will be described.

In this embodiment, a substrate holder for arranging and holding a plurality of substrates, a tubular inner tube having an opening at which the substrate holder can be taken in and out below, and a flange are provided on the outer periphery of the lower end with the upper end closed. A reaction tube having a tubular outer tube configured to surround the inner tube, a furnace body surrounding the upper and side sides of the reaction tube, a heater for heating the inside of the furnace body, and a flange via a seal member. The reaction tube is provided with a mating member to be connected, a heat insulating structure arranged between the substrate holder and the mating member, and a gas supply mechanism for supplying gas to a plurality of substrates held in the reaction tube. In the vicinity of the flange, an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe and the outside of the outer pipe, and a scattering plate provided at a position facing the exhaust pipe along the outer surface of the inner pipe. It is an embodiment of the substrate processing apparatus which has.

FIG. 3 is a schematic view showing the configuration of a main part of the first embodiment. The main part of the substrate processing apparatus having the scattering plate 30 provided only at the position facing the exhaust pipe 15 along the outer surface of the inner pipe 4B of the reaction tube of this embodiment is schematically shown. The scattering plate 30 composed of a radiation net that scatters radiation (light rays such as infrared rays) is located at a position substantially facing the exhaust pipe 15 so as to scatter and reflect radiation that directly reaches the O-ring 19B under the exhaust pipe from the heater. It is installed so as to cover the height between the straight line drawn from the upper part of the heater to the O-ring 19B and the straight line drawn from the lower part of the heater to the O-ring. As shown in FIGS. 3A and 3B, the scattering plate 30 is provided at a position in consideration of the direction of arrival of heat radiation, but the scattering plate 30 is opened so as not to block the intermediate exhaust port. 30A is formed. That is, since the inner pipe 4B has an auxiliary exhaust port (intermediate exhaust port) 4G that fluidly communicates the inside and the outside of the inner pipe at a position facing the exhaust pipe 15, a newly installed scattering plate 30 is configured to have an opening 30A having the same shape as the sub-exhaust port 4G so as not to block the sub-exhaust port 4G.

For the scattering plate 30 of this embodiment, it is desirable to use quartz that is opaque due to the formation of a large number of minute cavities and voids that are internal bubbles inside. This type of opaque quartz remains opaque even when fired. Since the wavelength transmittance changes depending on the size of the void, it is advisable to select a void of an appropriate size according to the temperature of the reactor, 600-1000 ° C.

Further, when the scattering plate 30 comes into contact with the inner tube of the reaction tube on the surface, it causes particles to be generated, so it is necessary to reduce the number of contact points as much as possible. In this embodiment, as shown in (a) and (b) of FIG. 3, hinges 31 on the insertion side are provided at two upper and lower ends on both sides of the scattering plate 30, for a total of four locations, and the outer surface of the reaction tube inner tube 4B. It is inserted into the hinge 32 on the receiving side provided in correspondence with the above from above, fitted and attached. In FIG. 3, four hinges are used, but it is desirable to use at least three hinges and design so as to reduce backlash as much as possible in consideration of manufacturing intersections. That is, the scattering plate 30 is hooked by three or more hinges and attached to the inner tube 4B. The back surface of the mounted scattering plate 30, that is, the mounted inner surface, is installed in a state of being slightly floated from the outer surface of the reaction tube inner tube.

The scattering plate 30 may absorb heat. Further, instead of the scattering plate 30, a reflecting plate having a structure in which a metal film is sandwiched between quartz or the like may be used. Further, it may be integrally configured with the reaction tube. For example, a metal film or a dielectric multilayer film (including TiO2 and TaO3) may be formed directly on the inner tube 4B of the reaction tube, and a thick film of quartz or other ceramic may be placed on the metal film or a thick ceramic film to protect the reaction tube. In the present specification, these plate-like structures having a scattering function are collectively referred to as a scattering plate.

According to this embodiment, by installing a scattering plate that suppresses radiation from the heater at a position facing the exhaust port of the reaction tube inner tube without using a cylindrical heat shield ring, between the flange and the mating member. It is possible to efficiently suppress the temperature rise of the lower part of the exhaust port of the seal member installed in the above.

In this embodiment, a substrate holder for arranging and holding a plurality of substrates, a tubular inner tube having an opening at which the substrate holder can be taken in and out below, and a flange are provided on the outer periphery of the lower end with the upper end closed. A reaction tube having a tubular outer tube configured to surround the inner tube, a furnace body surrounding the upper and side sides of the reaction tube, a heater for heating the inside of the furnace body, and a flange forming a sealing member. A reaction tube provided with a mating member connected via a mating side member, a heat insulating structure arranged between the substrate holder and the mating side member, and a gas supply mechanism for supplying gas to a plurality of substrates held by the reaction tube. Is an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe and the outside of the outer pipe in the vicinity of the flange, and a partial cooling block provided on the upper surface of the mating member and below the exhaust pipe. This is an example of a substrate processing apparatus having the above.

FIG. 4 is a schematic view showing the configuration of a main part of the second embodiment. As described with reference to FIG. 2, when the exhaust diameter of the reaction pipe 4, that is, the diameter of the exhaust pipe 15 is increased for the purpose of improving the exhaust efficiency in the reaction pipe, the seal cap 19 and the exhaust pipe 15 become close to each other. The reaction tube fixing ring 29 cannot be provided below the exhaust port. Therefore, in this embodiment, the structure is such that the partial cooling block is made to bite into the lower part of the exhaust pipe 15.

That is, as shown in FIGS. 4A and 4B, a notch 33 having a strength problem is provided in the build-up portion 34 under the exhaust port of the reaction tube 4, and the notch 33 is provided with a notch 33. The shape is such that the partial cooling block 36 made of a metal such as stainless steel, which extends from the cooling block 35 in which the cooling water can be circulated, partially enters. The installation position of the cooling block 35 corresponds to the portion where the reaction pipe fixing ring 29 does not exist in the lower part of the exhaust pipe 15 shown in FIG.

As shown in FIGS. 4A and 4B, the exhaust pipe 15 is provided with a build-up portion 34 in order to maintain the strength in the vicinity of the base to the reaction pipe 4. On the other hand, since it is desirable that the exhaust pipe 15 is provided as close to the furnace opening flange as possible below the reaction pipe 4, the build-up portion 34 is partially connected to the furnace opening flange 4C. In this embodiment, in the lower portion of the built-up portion 34, a portion having no problem in strength, that is, a notch portion 33 is formed diagonally downward, and the partial cooling block 36 enters the inside of the notch portion 33. It has a shape. By installing the partial cooling block 36, the upper part of the O-ring 19B installed on the upper surface of the manifold 5 which is the mating side member is partially covered, so that the radiation reflection effect is also obtained.

As shown in (c) and (d) of FIG. 4, in the configuration of this embodiment, the reaction tube 15 is provided by the partial cooling block 36 extended inside the notch 33 at the lower part of the exhaust pipe 15. It is possible to efficiently suppress the temperature rise of the O-ring 19B, which is a sealing member of the lower part of the exhaust port. The elastic member 38 shown in (c) of the figure is an elastic member made of a fluororesin sheet or a heat conductive sheet in which the partial cooling block 36 and the flange portion of the reaction tube are brought into close contact with each other. The heat conductive sheet is a resin in which a highly heat conductive filler such as aluminum nitride is dispersed. Further, as shown in (c) of the figure, a cooling water channel 37 that goes around the inside of the manifold 15 is installed separately from the cooling block 35 under the O-ring 19B installed on the upper surface of the manifold 5 and is inside. The O-ring 19B may be cooled by the cooling water flowing through the O-ring 19B.

According to this embodiment, by arranging the partial cooling block under the exhaust port of the reaction tube, it is possible to efficiently suppress the temperature rise of the seal member under the exhaust port.

The present invention is not limited to the above-described examples, and includes various modifications. For example, the above-mentioned examples have been described in detail for a better understanding of the present invention, and are not necessarily limited to those having all the configurations of the description. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is possible to add the configuration of another embodiment to the configuration of one embodiment. Further, it is possible to add / delete / replace a part of the configuration of each embodiment with another configuration. In the above description of the examples of the present invention, the type in which the inner tube and the outer tube of the reaction tube are integrated has been described, but the present invention is not limited to this, and a separable type reaction tube is provided. Needless to say, it can also be applied to substrate processing equipment.

It can be applied to equipment that processes semiconductor substrates and the like under reduced pressure, a processing gas atmosphere, or high temperature. For example, deposition of CVD, PVD, ALD, epitaxial growth, etc., and processing of forming an oxide film or nitride film on the surface. , Diffusion treatment, etching treatment.

1 Substrate processing equipment, 2 Processing furnace 3 Heater, 4 Reaction tube 5 Manifold, 6 Processing chamber 7 Wafer, 8 Nozzle 9, 12 Gas supply tube, 10, 13 MFC
11, 14 Valve 15 Exhaust pipe, 16 Pressure sensor 17 APC valve, 18 Vacuum pump 19 Seal cap, 19A, 19B O-ring 30 Scatter plate, 31, 32 Butterfly 33 Notch, 34 Overlay 35 Cooling block, 36 parts Cooling block 37 Cooling water flow path, 38 Elastic member

Claims (8)

A board holder that arranges and holds multiple boards,
A tubular inner tube having an opening through which the substrate holder can be taken in and out, and a tubular outer tube having an upper end closed and a flange provided on the outer periphery of the lower end to surround the inner tube. With a reaction tube
The furnace body surrounding the upper and side sides of the reaction tube,
A heater that heats the inside of the furnace body and
With the mating member to which the flange is connected via the seal member,
A heat insulating structure arranged between the substrate holder and the mating member,
A gas supply mechanism for supplying gas to the plurality of substrates held by the substrate holder in the reaction tube is provided.
The reaction pipe includes an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe and the outside of the outer pipe in the vicinity of the flange, and the exhaust pipe along the outer surface of the inner pipe. A substrate processing apparatus configured to have a light scattering plate provided at a position facing the above. The substrate processing apparatus according to claim 1.
A substrate processing device configured such that the light scattering plate is floated and installed on the outer surface of the inner tube. The substrate processing apparatus according to claim 1.
The inner pipe has an intermediate exhaust port that fluidly communicates the inside and the outside of the inner pipe at a position facing the exhaust pipe.
The light scattering plate is a substrate processing device configured to have an opening having the same shape as the intermediate exhaust port. The substrate processing apparatus according to claim 1.
The light scattering plate is a substrate processing device configured to be opaque by a plurality of voids formed inside. The substrate processing apparatus according to claim 2.
The light scattering plate is formed by fitting three or more hinges of the light scattering plate into a plurality of hinges formed in the inner tube so as to form a pair with the plurality of hinges. A substrate processing device mounted on the inner pipe. The substrate processing apparatus according to claim 1.
The reaction tube is a substrate processing device having a partial cooling block provided on the upper surface of the mating side member and below the exhaust pipe. The substrate processing apparatus according to claim 6.
The partial cooling block is a substrate processing device having a partial cooling portion that bites between the flange and the exhaust pipe, and at least a part of the partial cooling portion is configured to be overlapped on a sealing member. A board holder that arranges and holds multiple boards,
An inner tube tubular with out possible opening said substrate holder downward, the flange is provided at the lower end outer peripheral closed upper end and an outer tube tubular configured to surround the inner tube With a reaction tube
The furnace body surrounding the upper and side sides of the reaction tube,
A heater that heats the inside of the furnace body and
With the mating member to which the flange is connected via the seal member,
A heat insulating structure arranged between the substrate holder and the mating member,
A gas supply mechanism for supplying gas to the plurality of substrates held by the substrate holder in the reaction tube is provided.
The reaction pipe includes an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe and the outer side of the outer pipe in the vicinity of the flange, and the exhaust pipe along the outer surface of the inner pipe. manufacturing of the semiconductor device have a and the light scattering plate provided on the opposite position, while the inside of the surrounding the top and sides of the reaction tube furnace of the reaction tube was heated by the heater, processing the substrate to Method.

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