JP6918568B2 - Board processing system, board processing method, program, and information storage medium - Google Patents

Description

The present invention relates to a substrate processing system, a substrate processing method, a program, and an information storage medium.

Photolithography is used in the manufacture of FPDs (flat panel displays) and the like. Photolithography is a technique in which a photoresist film (hereinafter, simply referred to as “resist film”) is pattern-exposed and the pattern-exposed resist film is developed to form a resist pattern.

The local exposure apparatus described in Patent Document 1 locally exposes a resist film before development. In addition to the normal pattern exposure, local exposure is performed on an arbitrary portion where the film thickness is desired to be thinner. Thereby, for example, after development, the in-plane variation of the residual film thickness of the resist pattern can be reduced.

Japanese Unexamined Patent Publication No. 2013-84000

In Patent Document 1, development is performed after (1) pattern exposure and local exposure, or (2) local exposure, first development, pattern exposure, and second development are performed in this order.

By the way, the light of local exposure is more easily attenuated by the resist film than the light of pattern exposure, and it is difficult to reach the deep part of the resist film.

Therefore, when the thickness of the resist film is thick as a whole or a part, the light of the local exposure does not sufficiently reach the deep part of the resist film, and it is difficult to obtain a desired resist pattern by the development after the local exposure and the local exposure. Met.

The present invention has been made in view of the above problems, and when the thickness of the resist film is thick as a whole or a part, a desired resist pattern can be obtained by local exposure and development after local exposure. The main purpose is to provide a substrate processing system.

In order to solve the above problems, according to one aspect of the present invention,
An exposure device that patterns-exposes a resist film formed on a substrate,
A first developing apparatus that develops the resist film that has been pattern-exposed by the exposure apparatus to form a resist pattern.
A local exposure apparatus that locally exposes the resist film in order to correct the residual film thickness of the resist pattern obtained by the first developing apparatus.
Wherein developing the resist film which is exposed by the local exposure device, and a second developing device for correcting the remaining film thickness of the resist pattern, the substrate processing system is provided.

According to one aspect of the present invention, there is provided a substrate processing system capable of obtaining a desired resist pattern by local exposure and development after local exposure when the thickness of the resist film is thick as a whole or a part. NS.

It is a top view which shows the substrate processing system by one Embodiment. It is a top view which shows the substrate processing system by the modification. It is a side view which shows the arrangement of the 1st development apparatus, the local exposure apparatus, and the 2nd development apparatus by the modification. It is sectional drawing which shows the local exposure apparatus by one Embodiment. It is a top view which shows the local exposure apparatus by one Embodiment. It is a top view which shows the section where local exposure by one Embodiment is performed by coordinates. It is a table which shows the setting parameter of the light emission control program by one Embodiment. It is a flowchart which shows the substrate processing method by one Embodiment. It is a figure which shows the application of the resist film by one Embodiment. It is a figure which shows the pattern exposure of the resist film by one Embodiment. It is a figure which shows the 1st development of the resist film by one Embodiment. It is a figure which shows the local exposure of the resist film by one Embodiment. It is a figure which shows the 2nd development of the resist film by one Embodiment. It is a figure which shows the relationship between the illuminance of the light of local exposure, and the amount of change of the line width by local exposure under the condition that the film thickness of the resist film by one Embodiment is constant.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In each drawing, the same or corresponding configurations are designated by the same or corresponding reference numerals and the description thereof will be omitted.

<Board processing system>
FIG. 1 is a plan view showing a substrate processing system according to an embodiment. In FIG. 1, the X, Y, and Z directions are perpendicular to each other. The X and Y directions are horizontal, and the Z direction is vertical.

The substrate processing system 1 forms a resist pattern 9 (see FIG. 13) on the substrate G. In the present embodiment, the resist film 5 on which the resist pattern 9 is formed is a positive type in which the exposed portion is removed by development, but the exposed portion may be a negative type remaining after development. The substrate processing system 1 is a flat flow system in which various treatments are performed on the substrate G while horizontally transporting the substrate G with a roller or the like. The substrate processing system 1 is not limited to the flat flow method.

The substrate processing system 1 has a first processing line 2 and a second processing line 3. The first processing line 2 has two straight lines extending in the X direction and a connecting line extending in the Y direction so as to connect the X-direction ends of the two straight lines. The second processing line 3 has two straight lines extending in the X direction, and the two straight lines are folded back at the end in the X direction. The end portion of the first processing line 2 on the downstream side in the transport direction and the end portion of the second processing line 3 on the upstream side in the transport direction are adjacent to each other in the Y direction.

The first processing line 2 has a cleaning device 11, a coating device 12, a prebaking device 13, an exposure device 14, a first developing device 15, and a conveyor 20 in this order along the transport direction of the substrate G.

The cleaning device 11 cleans the substrate G. The cleaning device 11 cleans the upper surface of the substrate G while horizontally transporting the substrate G with a roller or the like. The cleaning includes, for example, ultraviolet cleaning, scrubber cleaning and the like. In ultraviolet cleaning, organic substances adhering to the substrate G are removed.

The coating device 12 applies a resist solution to the substrate G to form a resist film 5 (see FIG. 9). A predetermined functional film 6 is formed in advance on the substrate G, and a resist film 5 is formed on the functional film 6. Examples of the functional film 6 include a conductive film and the like. The coating device 12 applies the resist liquid to the substrate G from a nozzle discharge port extending in a direction (Y direction) orthogonal to the transport direction (X direction) of the substrate G while horizontally transporting the substrate G with a roller or the like.

The prebaking device 13 heat-treats the resist film 5 on the substrate G with a heater or the like. The solvent of the resist liquid remaining on the resist film 5 on the substrate G is evaporated and removed, and the adhesion of the resist film 5 to the substrate G is enhanced. After that, the substrate G may be cooled to a predetermined temperature.

The exposure apparatus 14 pattern-exposes the resist film 5 formed on the substrate G. The exposure apparatus 14 transfers the mask pattern 7 (see FIG. 10) to the resist film 5 with light. The mask pattern 7 may be reducedly projected onto the resist film 5. The mask pattern 7 may be a halftone mask.

The first developing apparatus 15 develops the resist film 5 that has been pattern-exposed by the exposure apparatus 14 to form a resist pattern 8 (see FIG. 11). The first developing apparatus 15 supplies the developing solution and the rinsing solution to the substrate G in this order while horizontally transporting the substrate G with a roller or the like, and then dries the substrate G with an air knife or the like. The transport path for transporting the substrate G of the first developing device 15 may alternately have a horizontal path for transporting the substrate G horizontally and a ramp for inclining the substrate G. The developer and rinse liquid are supplied to the substrate G on the horizontal road, and the developer and rinse liquid are dropped from the substrate G on the ramp.

The conveyor 20 horizontally conveys the substrate G by a roller or the like from the first developing apparatus 15 to the vicinity of the end portion on the upstream side in the conveying direction of the second processing line 3. The substrate G conveyed by the conveyor 20 may be conveyed to the end of the second processing line 3 on the upstream side in the transfer direction by a transfer device (not shown).

By the way, the resist pattern 8 obtained by the first developing apparatus may deviate from the target pattern. For example, the line width, hole diameter, residual film thickness, etc. may deviate. The deviation occurs in the same manner in a specific region of the substrate G each time.

Therefore, the second processing line 3 has the local exposure apparatus 21, the second developing apparatus 25, the post-baking apparatus 31, and the conveyor 32 in this order along the conveying direction of the substrate G.

The local exposure apparatus 21 locally exposes the resist film 5 in order to correct the resist pattern 8 obtained by the first developing apparatus 15. The local exposure apparatus 21 locally exposes the resist film 5 in order to reduce in-plane variations such as the line width, hole diameter, and residual film thickness of the resist pattern 8.

The local exposure apparatus 21 divides the substrate G into a plurality of compartments in the first direction (X direction) and the second direction (Y direction), and the compartments in which the resist pattern 8 obtained by the first developing apparatus 15 needs to be corrected. Is locally exposed (see FIG. 12). The illuminance of light is variable for each section. The details of the local exposure apparatus 21 will be described later.

The second developing apparatus 25 develops the resist film 5 exposed by the local exposure apparatus 21 to form a resist pattern 9 (see FIG. 13). The second developing apparatus 25 supplies the developing solution and the rinsing solution to the substrate G in this order while horizontally transporting the substrate G with a roller or the like, and then dries the substrate G with an air knife or the like. The transport path for transporting the substrate G of the second developing device 25 may alternately have a horizontal path for transporting the substrate G horizontally and a ramp for inclining the substrate G. The developer and rinse liquid are supplied to the substrate G on the horizontal road, and the developer and rinse liquid are dropped from the substrate G on the ramp.

The post-baking device 31 heat-treats the resist film 5 on the substrate G with a heater or the like. The developing solution and rinsing solution remaining on the resist film 5 on the substrate G are evaporated and removed, and the adhesion of the resist film 5 to the substrate G is enhanced. After that, the substrate G may be cooled to a predetermined temperature.

The conveyor 32 conveys the substrate G by a roller or the like from the post-baking device 31 to the end of the second processing line 3 on the downstream side in the conveying direction. On the downstream side of the second processing line 3 in the transport direction, a transport device that receives the substrate G from the conveyor 32 and transports the substrate G to a predetermined position is arranged.

The substrate processing system 1 includes a control device 50. The control device 50 is composed of, for example, a computer, and has a CPU (Central Processing Unit) 51, a storage medium 52 such as a memory, an input interface 53, and an output interface 54, as shown in FIG. The control device 50 performs various controls by causing the CPU 41 to execute the program stored in the storage medium 52. Further, the control device 50 receives a signal from the outside through the input interface 53 and transmits the signal to the outside through the output interface 54.

The program of the control device 50 is stored in the information storage medium and installed from the information storage medium. Examples of the information storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical desk (MO), a memory card, and the like. The program may be downloaded and installed from the server via the Internet.

The substrate processing system 1 is not limited to the configuration shown in FIG. FIG. 2 is a plan view showing a substrate processing system according to a modified example. The substrate processing system 1A shown in FIG. 2 has a processing line 2A. The processing line 2A has two straight lines extending in the X direction and a connecting line extending in the Y direction so as to connect the ends of the two straight lines. The processing line 2A includes a cleaning device 11, a coating device 12, a prebaking device 13, an exposure device 14, a first developing device 15, a local exposure device 21, a second developing device 25, and a post-baking along the transport direction of the substrate G. The device 31 is provided in this order. The first developing device 15, the local exposure device 21, and the second developing device 25 are arranged in the horizontal direction in FIG. 2, but may be arranged in the vertical direction as shown in FIG.

FIG. 3 is a side view showing the arrangement of the first developing device, the local exposure device, and the second developing device according to the modified example. In FIG. 3, the first developing device 15, the local exposure device 21, and the second developing device 25 are arranged in this order from the upper side to the lower side.

The first developing apparatus 15 includes a developing unit 16 that supplies a developing solution onto the substrate G along the transport direction of the substrate G, a replacement unit 17 that replaces the developing solution remaining on the substrate G with a rinsing solution, and the substrate G. A rinse portion 18 for washing with a rinse solution and a drying portion 19 for drying the substrate G are provided in this order. The developing unit 16, the replacing unit 17, and the rinsing unit 18 may alternately have horizontal paths for horizontally transporting the substrate G and inclined paths for inclining the substrate G, respectively. The developer and the like are supplied to the substrate G on the horizontal road, and the developer and the like are dropped from the substrate G on the ramp.

Similarly, the second developing apparatus 25 includes a developing unit 26 that supplies a developing solution onto the substrate G along the transport direction of the substrate G, and a replacing unit 27 that replaces the developing solution remaining on the substrate G with a rinsing solution. A rinsing portion 28 for cleaning the substrate G with a rinsing solution and a drying portion 29 for drying the substrate G are provided in this order. The developing unit 26, the replacing unit 27, and the rinsing unit 28 may alternately have horizontal paths for horizontally transporting the substrate G and inclined paths for inclining the substrate G, respectively. The developer and the like are supplied to the substrate G on the horizontal road, and the developer and the like are dropped from the substrate G on the ramp.

A local exposure apparatus 21 is provided at the center of the first developing apparatus 15 and the second developing apparatus 25 in the vertical direction. After being unloaded from the first developing apparatus 15, the substrate G is horizontally conveyed by the conveyor 22 and carried into the local exposure apparatus 21. After that, the substrate G is carried out from the local exposure apparatus 21, horizontally conveyed by the conveyor 23, and then lowered onto the second developing apparatus 25.

In FIG. 3, the first developing device 15, the local exposure device 21, and the second developing device 25 are arranged in this order from the upper side to the lower side, but the order may be reversed. That is, the first developing device 15, the local exposure device 21, and the second developing device 25 may be arranged in this order from the lower side to the upper side.

<Local exposure device>
FIG. 4 is a cross-sectional view showing a local exposure apparatus according to an embodiment. FIG. 5 is a plan view showing a local exposure apparatus according to an embodiment. The local exposure apparatus 21 divides the substrate G into a plurality of compartments in the first direction (X direction) and the second direction (Y direction), and the compartments in which the resist pattern 8 obtained by the first developing apparatus 15 needs to be corrected. Is locally exposed. The illuminance of light is variable for each section.

The local exposure apparatus 21 has a substrate transport path 61 that transports the substrate G in the X direction. As shown in FIG. 5, the substrate transport path 61 has a plurality of columnar rollers 62 extending in the Y direction at intervals in the X direction. As each roller 62 rotates about its rotation shaft 63, the substrate G is conveyed in the X direction. The plurality of rotating shafts 63 are connected by a belt 64 or the like and rotate synchronously. One of the plurality of rotating shafts 63 that rotate synchronously is connected to a roller driving device 65 such as a motor.

The local exposure apparatus 21 includes a chamber 66 that forms an exposure processing space for the substrate G. The substrate transport path 61 penetrates the inside of the chamber 66 in the X direction. At one end of the chamber 66 in the X direction, a carry-in inlet 67 for carrying the substrate G on the substrate transport path 61 into the exposure processing space is provided. On the other hand, at the other end of the chamber 66 in the X direction, an carry-out outlet 68 for carrying out the substrate G on the substrate transport path 61 from the exposure processing space is provided.

The local exposure apparatus 21 has a light irradiator 70 that locally exposes the substrate G (UV light radiation) above the substrate transport path 61 in the chamber 66. The light irradiator 70 includes a line light source 71 extending in the Y direction, a housing 73 accommodating the line light source 71, and a light emitting window 74 provided on the lower surface of the housing 73. The light emitting window 74 includes a light diffusing plate and is arranged between the line light source 71 and the substrate G which is an irradiated body. The light emitted from the line light source 71 is appropriately diffused by the light emission window 74.

The line light source 71 has a plurality of light emitting elements 72 arranged linearly along the Y direction on the circuit board 75. The light emitting element 72 may be a UV-LED element that emits UV light having a predetermined wavelength (for example, a wavelength close to any of g-line (436 nm), h-line (405 nm), and i-line (364 nm)). Since the light emitted from the line light source 71 is appropriately diffused by the light emitting window 74, the light of the adjacent light emitting elements 72 is connected in a line and is irradiated downward.

The local exposure apparatus 21 has a light emitting drive unit 76 that independently drives a plurality of light emitting elements 72 to emit light. The light emitting drive unit 76 changes the forward current value supplied to each light emitting element 72 under the control of the control device 50. Each light emitting element 72 emits light with irradiance corresponding to the forward current value supplied by the light emitting driving unit 76. The plurality of light emitting elements 72 are arranged in a straight line in the present embodiment, but the arrangement thereof is not particularly limited.

The local exposure apparatus 21 has an elevating shaft 77 that supports the light irradiator 70 from below, and an elevating drive unit 78 that elevates and elevates the elevating shaft 77. The elevating drive unit 78 has a motor and a ball screw that converts the rotational motion of the motor into the linear motion of the elevating shaft 77. The elevating drive unit 78 can make the height of the light irradiator 70 variable with respect to the substrate G conveyed on the substrate conveying path 61 by elevating and lowering the elevating shaft 77 under the control of the control device 50.

In the local exposure apparatus 21, the illuminance sensor 81 for detecting the illuminance (radiation bundle) of the light emitted from the line light source 71 and passing through the light emission window 74 and the illuminance sensor 81 are moved in the X direction (conveyance of the substrate G) in the chamber 66. It has a first horizontal movement drive unit 82 that moves the illuminance sensor 81 in the Y direction (direction), and a second horizontal movement drive unit 83 that moves the illuminance sensor 81 in the Y direction (extending direction of the line light source 71). The illuminance sensor 81 detects the illuminance at an arbitrary position in the Y direction below the light emission window 74, and supplies a signal indicating the detection result to the control device 50. The first horizontal movement drive unit 82 and the second horizontal movement drive unit 83 are controlled by the control device 50.

The local exposure apparatus 21 has, for example, a substrate detection sensor 90 that detects a predetermined position (for example, the tip end) of the substrate G on the substrate transport path 61 on the upstream side of the carry-in inlet 67 of the chamber 66. The board detection sensor 90 outputs the detection signal to the control device 50. The control device 50 can grasp the timing when a predetermined section of the substrate G passes directly under the line light source 71 based on the elapsed time from the reception of the detection signal of the substrate detection sensor 90 and the transport speed of the substrate G.

FIG. 6 is a plan view showing in coordinates the sections where the local exposure according to the embodiment is performed. In FIG. 6, AR represents a region where local exposure is performed. The area AR may be composed of a plurality of sections. FIG. 7 is a table showing the setting parameters of the light emission control program according to the embodiment.

The control device 50 has a light emission control program P for controlling the forward current value of each light emitting element 72 at a predetermined timing in a predetermined storage area of the storage medium 52. As shown in FIG. 6, the light emission control program P manages information by dividing the substrate G into a plurality of sections in the transport direction (X direction) and the width direction (Y direction). The light emission control program P includes, as setting parameters, for example, the coordinates of the section where the local exposure is performed, the identification information (for example, the identification number) of the light emitting element 72 which locally exposes the section, and the forward current value. ..

The setting parameters of the light emission control program P are set based on the results of the preparatory test performed in advance. In the preparatory test, (1) the deviation from the target pattern of the resist pattern 8 before the local exposure after the first development, the section where the deviation occurs, (2) the illuminance of the local exposure light in each section, and the local exposure. The relationship with the amount of change in the resist pattern due to (for example, the relationship shown in FIG. 14) is investigated. The setting parameters are set so that the resist pattern 9 obtained after the second development matches the target pattern.

<Board processing method>
Next, a substrate processing method using the substrate processing system 1 having the above configuration will be described with reference to FIGS. 8 to 13. FIG. 8 is a flowchart showing a substrate processing method according to an embodiment. The substrate processing shown in FIG. 8 is performed under the control of the control device 50. FIG. 9 is a diagram showing application of a resist film according to one embodiment. FIG. 10 is a diagram showing a pattern exposure of a resist film according to one embodiment. FIG. 11 is a diagram showing the first development of the resist film according to one embodiment. FIG. 12 is a diagram showing local exposure of the resist film according to one embodiment. FIG. 13 is a diagram showing a second development of the resist film according to one embodiment. In FIG. 13, the outer shape of the resist film before the second development is shown by a chain double-dashed line.

In the cleaning step S101 of FIG. 3, the cleaning device 11 cleans the substrate G. The cleaning device 11 cleans the upper surface of the substrate G while horizontally transporting the substrate G with a roller or the like. The cleaning includes, for example, ultraviolet cleaning, scrubber cleaning and the like. In ultraviolet cleaning, organic substances adhering to the substrate G are removed.

In the coating step S102, the coating apparatus 12 applies a resist solution to the substrate G to form a resist film 5 (see FIG. 9). A predetermined functional film 6 is formed in advance on the substrate G, and a resist film 5 is formed on the functional film 6. Examples of the functional film 6 include a conductive film and the like. The coating device 12 applies the resist liquid to the substrate G from a nozzle discharge port extending in a direction (Y direction) orthogonal to the transport direction (X direction) of the substrate G while horizontally transporting the substrate G with a roller or the like.

In the pre-baking step S103, the pre-baking device 13 heat-treats the resist film 5 on the substrate G with a heater or the like. The solvent of the resist liquid remaining on the resist film 5 on the substrate G is evaporated and removed, and the adhesion of the resist film 5 to the substrate G is enhanced. After that, the substrate G may be cooled to a predetermined temperature.

In the exposure step S104, the exposure apparatus 14 pattern-exposes the resist film 5 formed on the substrate G. The exposure apparatus 14 transfers the mask pattern 7 (see FIG. 10) to the resist film 5 with light. The mask pattern 7 may be reducedly projected onto the resist film 5. The mask pattern 7 may be a halftone mask.

In the first developing step S105, the first developing device 15 develops the resist film 5 pattern-exposed by the exposure device 14 to form the resist pattern 8 (see FIG. 11). In the first developing step S105, the developing solution is supplied onto the substrate G, the developing solution remaining on the substrate G is replaced with a rinsing solution, the substrate G is washed with the rinsing solution, and the substrate G is dried. Things are done in this order.

By the way, the resist pattern 8 obtained in the first developing step S105 may deviate from the target pattern. For example, the line width, hole diameter, residual film thickness, etc. may deviate. The deviation occurs in the same manner in a specific region of the substrate G each time.

Therefore, in the local exposure step S106, the local exposure apparatus 21 locally exposes the resist film 5 in order to correct the resist pattern 8 obtained in the first development step S105. In the local exposure step S106, the resist film 5 is locally exposed in order to reduce in-plane variations such as the line width, hole diameter, and residual film thickness of the resist pattern 8.

In the local exposure step S106, the substrate G is divided into a plurality of sections in the first direction (X direction) and the second direction (Y direction), and the sections required to be corrected for the resist pattern obtained by the first developing device 15 are divided. Local exposure (see FIG. 12). In order to make the illuminance of light variable for each section, a plurality of light emitting elements 72 are independently driven to emit light.

According to this embodiment, the first development step S105 is performed after the exposure step S104 and before the local exposure step S106. Unlike the light of local exposure, the light of pattern exposure reaches the deep part of the resist film 5 (the portion close to the functional film 6) with almost no attenuation by the resist film 5. Therefore, a part of the resist film 5 is removed in the first developing step S105, and the light is not attenuated in the local exposure step S106 in the removed portion, so that the light easily reaches the deep part of the resist film 5. Therefore, when the film thickness of the resist film 5 is thick as a whole or a part, a desired resist pattern can be obtained by local exposure and development after local exposure.

In the second developing step S107, the second developing device 25 develops the resist film 5 exposed by the local exposure device 21 to form the resist pattern 9 (see FIG. 13). In the second developing step S107, the developing solution is supplied onto the substrate G, the developing solution remaining on the substrate G is replaced with a rinsing solution, the substrate G is washed with the rinsing solution, and the substrate G is dried. Things are done in this order.

When the resist film 5 is of the positive type, the line width (opening width) CD2 of the resist pattern 9 obtained in the second developing step S107 is the resist pattern 8 obtained in the first developing step S105 in the section where the local exposure is performed. Line width (opening width) is larger than CD1. Hereinafter, the difference obtained by subtracting CD1 from CD2 (CD2-CD1) is referred to as a line width change amount ΔCD. The amount of change in line width due to local exposure ΔCD changes according to the illuminance of the light of local exposure.

FIG. 14 is a diagram showing the relationship between the illuminance of the light of the local exposure and the amount of change in the line width due to the local exposure under the condition that the film thickness of the resist film according to the embodiment is constant. In FIG. 14, the solid line shows the data when the pattern exposure, the first development, the local exposure and the second development are performed in this order, and the alternate long and short dash line shows the pattern exposure, the local exposure and the second development without the first development. Shows the data when is performed in this order. For the alternate long and short dash line, the amount of change in line width is obtained by comparing with the data when the pattern exposure and the second development are performed in this order without performing the first development and the local exposure.

As shown in FIG. 14, by performing the first development after the pattern exposure and before the local exposure, the amount of change ΔCD of the line width due to the local exposure is larger than that in the case where the first development is not performed. can do. This is because a part of the resist film 5 is removed by the first development before the local exposure, and the light of the local exposure is not attenuated in the removed part, so that the light of the local exposure easily reaches the deep part of the resist film 5. Is. Therefore, when the film thickness of the resist film 5 is thick as a whole or a part, a desired resist pattern can be obtained by local exposure and second development after the local exposure.

In the post-baking step S108, the post-baking device 31 heat-treats the resist film on the substrate G with a heater or the like. The developing solution and rinsing solution remaining on the resist film on the substrate G are evaporated and removed, and the adhesion of the resist film to the substrate G is enhanced. After that, the substrate G may be cooled to a predetermined temperature.

After the post-baking step S108, the functional film 6 is etched using the resist pattern 9. After that, the resist pattern 9 is removed.

<Summary>
As described above, according to the present embodiment, the pattern exposure of the resist film 5, the first development of the resist film 5, the local exposure of the resist film 5, and the second development of the resist film 5 are performed in this order. conduct. Therefore, after the pattern exposure of the resist film 5, the first development of the resist film 5 is performed before the local exposure of the resist film 5. Unlike the light of local exposure, the light of pattern exposure reaches the deep part of the resist film 5 with almost no attenuation by the resist film 5. Therefore, a part of the resist film 5 is removed by the first development before the local exposure, and the light of the local exposure is not attenuated in the removed part, so that the light of the local exposure easily reaches the deep part of the resist film 5. Therefore, when the film thickness of the resist film 5 is thick as a whole or a part, a desired resist pattern can be obtained by local exposure and second development after the local exposure.

According to the present embodiment, in the local exposure, the resist film 5 is locally exposed in order to correct the line width of the resist pattern 8 obtained in the first development performed before the local exposure. Thereby, when the film thickness of the resist film 5 is thick as a whole or a part, the in-plane variation of the line width of the resist pattern 8 can be reduced.

In the present embodiment, the line width (opening width) of the resist pattern 8 is corrected, but the hole diameter of the resist pattern 8 may be corrected. In-plane variation in the hole diameter of the resist pattern 8 can be reduced. Further, the residual film thickness of the resist pattern 8 may be corrected. In-plane variation in the residual film thickness of the resist pattern 8 can be reduced.

<Transformation, improvement>
Although embodiments such as a substrate processing system and a substrate processing method have been described above, the present invention is not limited to the above embodiments, and various modifications are made within the scope of the gist of the present invention described in the claims. , Improvement is possible.

1 Substrate processing system 5 Resist film 6 Functional film 7 Mask pattern 8 Resist pattern obtained in the first developing process 9 Resist pattern obtained in the second developing process 11 Cleaning device 12 Coating device 13 Prebaking device 14 Exposure device 15 First developing device 21 Local exposure device 25 Second developing device 31 Post-baking device 50 Control device

Claims (6)

An exposure device that patterns-exposes a resist film formed on a substrate,
A first developing apparatus that develops the resist film that has been pattern-exposed by the exposure apparatus to form a resist pattern.
A local exposure apparatus that locally exposes the resist film in order to correct the residual film thickness of the resist pattern obtained by the first developing apparatus.
Wherein developing the resist film which is exposed by the local exposure device, and a second developing device for correcting the remaining film thickness of the resist pattern, the substrate processing system. The substrate processing system according to claim 1, wherein the local exposure apparatus locally exposes the resist film in order to correct the line width or hole diameter of the resist pattern obtained by the first developing apparatus. An exposure process for pattern exposure of a resist film formed on a substrate, and
A first developing step of developing the resist film that has been pattern-exposed in the exposure step to form a resist pattern,
In order to correct the residual film thickness of the resist pattern obtained in the first developing step, a local exposure step of locally exposing the resist film and a local exposure step of locally exposing the resist film.
Wherein developing the resist film which is exposed by the local exposure process, and a second developing step of correcting the remaining film thickness of the resist pattern, the substrate processing method. The substrate processing method according to claim 3, wherein in the local exposure step, the resist film is locally exposed in order to correct the line width or hole diameter of the resist pattern obtained in the first developing step. A program for causing a computer to execute the substrate processing method according to claim 3 or 4. An information storage medium that stores the program according to claim 5.

Images