JP6923396B2 - Adhesion strengthening treatment device and adhesion strengthening treatment method - Google Patents

Description

The present invention relates to an adhesion strengthening treatment apparatus and a contact strengthening treatment method for performing adhesion strengthening treatment on a substrate.

In the lithography process in the manufacture of semiconductor devices and the like, a resist pattern is formed by forming a resist film on the surface to be treated of a substrate and then performing an exposure process and a developing process. Usually, in order to improve the adhesion between the surface to be treated of the substrate and the resist film, an adhesion strengthening agent such as HMDS (hexamethyldisilazane) is applied to the surface to be treated of the substrate before the resist film is formed.

In the adhesion strengthening device described in Patent Document 1, a chamber space is formed by a chamber body and a sealing lid. The chamber space is evacuated while the substrate is housed in the chamber space. When the pressure in the chamber space drops to a predetermined vacuum pressure, HMDS is supplied to the chamber space through the supply pipeline provided in the sealing lid.

Japanese Unexamined Patent Publication No. 2005-93952

When the adhesion strengthening agent is supplied to the chamber space under reduced pressure as described above, the flow velocity of the adhesion strengthening agent in the chamber space increases. In this case, the adhesion strengthening agent may be intensively applied to a part of the surface to be treated of the substrate.

An object of the present invention is to provide an adhesion strengthening treatment apparatus and a contact strengthening treatment method capable of uniformly applying an adhesion strengthening agent to a surface to be treated of a substrate.

(1) The adhesion strengthening processing apparatus according to the first invention includes a chamber that forms a processing space in which a substrate is housed, a decompression unit that reduces the pressure of the processing space by discharging gas from the processing space, and a processing space. By the inert gas supply unit and the inert gas supply unit that supply the inert gas to the processing space while the gas is discharged by the decompression unit so that the pressure of the gas becomes the first value lower than the atmospheric pressure. After the inert gas is supplied to the treatment space, the treatment space contains an adhesion strengthening agent in a state where the gas is discharged by the decompression part so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. e Bei the adhesion-enhancing gas supply unit for supplying the adhesion enhancing gas, the second value is lower than the first value, the adhesion-enhancing gas supply unit, the second value the pressure of the processing space from a first value The close contact strengthening gas is supplied to the treatment space so as to decrease to .

In this adhesion strengthening treatment apparatus, since the inert gas is supplied to the treatment space while the gas is discharged from the treatment space, the decrease in pressure in the treatment space is suppressed. Since the adhesion strengthening gas is supplied to the treatment space in that state, the increase in the flow velocity of the adhesion strengthening gas in the treatment space is suppressed, and the adhesion strengthening gas gradually spreads in the treatment space. As a result, it is possible to prevent the adhesion strengthening gas from being intensively contacted with a part of the surface to be processed of the substrate. As a result, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate.
Further, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

(2) The adhesion strengthening gas supply unit may start supplying the adhesion strengthening gas to the treatment space when the supply of the inert gas to the treatment space by the inert gas supply unit is stopped.

In this case, the decrease in the concentration of the adhesion strengthening gas in the treatment space is suppressed. As a result, the amount of the adhesion strengthening agent applied to the surface to be treated of the substrate can be controlled with high accuracy.

(3) The close contact strengthening device according to the second invention includes a chamber that forms a processing space in which a substrate is housed, a decompression unit that reduces the pressure of the processing space by discharging gas from the processing space, and a processing space. Treated by an inert gas supply unit and an inert gas supply unit that supplies the inert gas to the processing space while the gas is being discharged by the decompression unit so that the pressure becomes the first value lower than the atmospheric pressure. After the inert gas is supplied to the space, the gas is discharged by the decompression part so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. It is provided with a close contact strengthening gas supply unit for supplying the strengthening gas, the inert gas supply unit supplies the inert gas to the treatment space at the first flow rate, and the close contact strengthening gas supply unit supplies the close contact strengthening gas to the first. supplying the processing space with a small second flow rate than the flow rate.

In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

(4) The decompression unit reduces the pressure in the treatment space to a third value lower than the first value and lower than the second value, and the inert gas supply unit reduces the pressure in the treatment space by the decompression unit. The inert gas may be supplied to the treatment space so that the pressure in the treatment space rises from the third value to the first value after the pressure drops to the third value.

In this case, since the inert gas is supplied after the pressure in the treatment space is sufficiently reduced, impurities such as liquid remaining in the treatment space are efficiently removed. As a result, the inert gas can be quickly replaced with the adhesion-enhancing gas when the adhesion-enhancing gas is supplied. Further, since impurities are prevented from being mixed in the adhesion strengthening gas, the processing accuracy of the substrate is further improved.

(5) The second value is lower than the first value, and the adhesion strengthening gas supply unit supplies the adhesion strengthening gas to the treatment space so that the pressure in the treatment space decreases from the first value to the second value. You may.

In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

(6) The adhesion strengthening treatment method according to the third invention includes a step of accommodating the substrate in the treatment space formed by the chamber and a treatment space so that the pressure in the treatment space becomes a first value lower than the atmospheric pressure. After the step of supplying the inert gas to the treatment space while discharging the gas from the treatment space and the step of supplying the inert gas, the pressure in the treatment space becomes a second value lower than the atmospheric pressure from the treatment space. see containing and supplying the adhesion enhancing gas containing an adhesion enhancing agent in the processing space while exhausting gas, the second value is lower than the first value, providing a contact-enhancing gas is in the processing space It involves supplying a close contact strengthening gas to the treatment space so that the pressure drops from the first value to the second value .

According to this method, since the inert gas is supplied to the processing space while the gas is discharged from the processing space, the decrease in pressure in the processing space is suppressed. Since the adhesion strengthening gas is supplied to the treatment space in that state, the increase in the flow velocity of the adhesion strengthening gas in the treatment space is suppressed, and the adhesion strengthening gas gradually spreads in the treatment space. As a result, it is possible to prevent the adhesion strengthening gas from being intensively contacted with a part of the surface to be processed of the substrate. As a result, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate.
Further, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

(7) The step of supplying the adhesion-enhancing gas may include starting the supply of the adhesion-enhancing gas to the treatment space when the supply of the inert gas to the treatment space is stopped.

In this case, the decrease in the concentration of the adhesion strengthening gas in the treatment space is suppressed. As a result, the amount of the adhesion strengthening agent applied to the surface to be treated of the substrate can be controlled with high accuracy.

(8) The adhesion strengthening method according to the fourth invention is a step of accommodating the substrate in the processing space formed by the chamber, and from the processing space so that the pressure in the processing space becomes the first value lower than the atmospheric pressure. After the step of supplying the inert gas to the treatment space while discharging the gas and the step of supplying the inert gas, the gas from the treatment space is set so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. The step of supplying the inert gas includes the step of supplying the adhesion strengthening gas containing the adhesion strengthening agent to the treatment space while discharging the inert gas, and the step of supplying the inert gas includes supplying the inert gas to the treatment space at the first flow rate. providing a contact-enhancing gas includes supplying the processing space adhesion-enhancing gas in the smaller second flow rate than the first flow rate.

In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

(9) The adhesion strengthening treatment method further includes a step of lowering the pressure in the treatment space to a third value lower than the first value and lower than the second value before the step of supplying the inert gas. The step of supplying the inert gas may include supplying the treatment space with the inert gas such that the pressure in the treatment space rises from a third value to a first value.

In this case, since the inert gas is supplied after the pressure in the treatment space is sufficiently reduced, impurities such as liquid remaining in the treatment space are efficiently removed. As a result, the inert gas can be quickly replaced with the adhesion-enhancing gas when the adhesion-enhancing gas is supplied. Further, since impurities are prevented from being mixed in the adhesion strengthening gas, the processing accuracy of the substrate is further improved.

(10) The second value is lower than the first value, and in the step of supplying the adhesion strengthening gas, the adhesion strengthening gas is applied to the treatment space so that the pressure in the treatment space decreases from the first value to the second value. May include supplying.

In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

According to the present invention, the adhesion strengthening agent can be uniformly applied to the surface to be treated of the substrate.

It is a schematic cross-sectional view which shows the specific structural example of the adhesion strengthening processing apparatus. It is a block diagram for demonstrating the control system of the close contact strengthening processing apparatus. It is a flowchart which shows the outline of the adhesion strengthening processing in the adhesion strengthening processing apparatus. It is a figure for demonstrating the change of the pressure of a processing space. It is a figure for demonstrating the comparative example of this invention.

Hereinafter, the adhesion strengthening treatment apparatus and the adhesion strengthening treatment method according to the embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display device substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like.

[1] Configuration FIG. 1 is a schematic cross-sectional view showing a specific configuration example of the adhesion strengthening processing apparatus 100 according to the present embodiment. The close contact strengthening processing device 100 of FIG. 1 includes a chamber 201, a cover elevating mechanism 209, a pressure sensor 210, a plurality of support pins 243, a support pin elevating mechanism 247, and an exhaust device 256.

Chamber 201 includes plate 205 and cover 207. A plurality of (for example, three) proximity balls 241 are provided on the upper surface of the plate 205. The substrate W is placed on the plurality of proximity balls 241 in a horizontal position. In this case, the surface to be processed of the substrate W is directed upward. The cover 207 is provided so as to cover the upper part of the substrate W on which the cover 207 is placed. The cover 207 is connected to the cover elevating mechanism 209. The cover elevating mechanism 209 is, for example, an air cylinder, and elevates and elevates the cover 207 between the upper position and the lower position. In FIG. 1, the cover 207 is in the lower position. When the cover 207 is in the lower position, an airtight processing space PS in which the substrate W is housed is formed between the cover 207 and the plate 205. The pressure sensor 210 detects the pressure in the processing space PS.

The cover 207 is provided with a gas flow path 213. The gas flow path 213 has an open end 213a at the center of the lower surface of the cover 207. The open end 213a faces the central portion of the substrate W placed on the plate 205. The inert gas supply unit Q1 and the close contact strengthening gas supply unit Q2 are connected to the gas flow path 213 via the gas supply pipe 261. The inert gas supply unit Q1 supplies the inert gas to the processing space PS through the gas supply pipe 261 and the gas flow path 213. The inert gas is, for example, nitrogen gas. The close contact strengthening gas supply unit Q2 supplies the close contact strengthening gas to the processing space PS through the gas supply pipe 261 and the gas flow path 213. The adhesion strengthening gas contains an adhesion strengthening agent. The adhesion enhancer is, for example, HMDS (hexamethyldisilazane). Each of the inert gas supply unit Q1 and the close contact strengthening gas supply unit Q2 includes, for example, a valve, and the supply timing of the inert gas and the close contact strengthening gas can be controlled by controlling the opening / closing timing of the valve.

A plurality (for example, three) through holes 245 are provided so as to penetrate the plate 205 in the vertical direction. A plurality (for example, three) of support pins 243 are inserted into through holes 245 of the plate 205, respectively. Below the plate 205, the lower end of each support pin 243 is connected to the support pin elevating mechanism 247. The support pin elevating mechanism 247 raises and lowers a plurality of support pins 243. A sealing portion 243a on a disk is attached to the upper end portion of each support pin 243. A recess 245a capable of accommodating the sealing portion 243a is formed at the upper end of each through hole 245 of the plate 205. The airtightness of the processing space PS is ensured by the peripheral edge of the lower surface of the sealing portion 243a coming into close contact with the bottom surface of the recess 245a.

Inside the plate 205, a temperature control unit 249 for adjusting the temperature of the substrate W is provided. The temperature control unit 249 is, for example, a heater. The temperature control unit 249 heat-treats the substrate W placed on the plate 205 by adjusting the temperature of the plate 205.

The plate 205 is formed with an exhaust slit 251 so as to extend in the circumferential direction outside the region on which the substrate W is placed. Further, a plurality of exhaust ports 253 are formed so as to communicate with the exhaust slits 251. Exhaust pipes 255 are connected to the plurality of exhaust ports 253. An exhaust device 256 is inserted in the exhaust pipe 255. The exhaust device 256 includes, for example, a pump, and discharges gas from the processing space PS through the exhaust pipe 255. As a result, the processing space PS is depressurized. In this example, the operating state of the exhaust device 256 can be switched between a strong state and a weak state. By operating the exhaust device 256 in the strong state, the pressure in the processing space PS can be adjusted to be lower than in the case where the exhaust device 256 is operated in the weak state. As the exhaust device 256, an ejector that discharges the gas from the processing space PS by the entrainment action of the compressed gas may be used.

FIG. 2 is a block diagram for explaining the control system of the close contact strengthening processing device 100. As shown in FIG. 2, the adhesion strengthening processing device 100 includes a control unit 150. The control unit 150 includes a CPU (central processing unit), a ROM (read-only memory), a RAM (random access memory), a storage device, and the like.

The control unit 150 includes a cover elevating control unit 51, a support pin elevating control unit 52, a decompression control unit 53, an inert gas supply control unit 54, a close contact strengthening gas supply control unit 55, a temperature control unit 56, and a time control unit 57. include. The functions of these components (51 to 57) are realized by the CPU executing a computer program stored in a storage medium such as a ROM or a storage device. The pressure sensor 210 gives a value representing the detected pressure (hereinafter, referred to as a detected pressure value) to the decompression control unit 53 and the inert gas supply control unit 54.

The cover elevating control unit 51 controls the elevating and lowering of the cover 207 of FIG. 1 by controlling the cover elevating mechanism 209. The support pin elevating control unit 52 controls the elevating and lowering of the plurality of support pins 243 of FIG. 1 by controlling the support pin elevating mechanism 247. The decompression control unit 53 controls the exhaust of the processing space PS by controlling the exhaust device 256. The inert gas supply control unit 54 controls the supply of the inert gas to the processing space PS by controlling the inert gas supply unit Q1. The close contact strengthening gas supply control unit 55 controls the supply of the close contact strengthening gas to the processing space PS by controlling the close contact strengthening gas supply unit Q2. The temperature control unit 56 adjusts the temperature control of the substrate W by controlling the temperature control unit 249. The time control unit 57 controls the start and end timings of the operations of the decompression control unit 53, the inert gas supply control unit 54, the close contact strengthening gas supply control unit 55, and the temperature control control unit 56.

[2] Operation FIG. 3 is a flowchart showing an outline of the adhesion strengthening process in the adhesion strengthening processing device 100. First, the cover elevating control unit 51 moves the cover 207 to an upward position (step S1). In that state, a transfer device (not shown) conveys the substrate W above the plate 205. Next, the support pin elevating control unit 52 raises the plurality of support pins 243 (step S2). As a result, the substrate is passed from a transfer device (not shown) to the plurality of support pins 243. Next, the support pin elevating control unit 52 lowers the plurality of support pins 243 (step S3). As a result, the substrate W is placed on the plurality of proximity balls 241.

Next, the cover elevating control unit 51 moves the cover 207 to a lower position (step S4). As a result, an airtight processing space PS for accommodating the substrate W is formed. Next, the decompression control unit 53 starts the operation of the exhaust device 256 (step S5). In this case, the decompression control unit 53 sets the operating state of the exhaust device 256 to a weak state. Further, the temperature control control unit 56 starts temperature control of the substrate W (step S6). Next, the decompression control unit 53 determines whether or not the pressure value detected from the pressure sensor 210 is equal to or less than the predetermined low vacuum value P1 (step S7). The decompression control unit 53 repeats step S7 until the detected pressure value becomes the low vacuum value P1 or less. When the detected pressure value becomes the low vacuum value P1 or less, the decompression control unit 53 switches the operating state of the exhaust device 256 to the strong state (step S8).

Next, the inert gas supply control unit 54 determines whether or not the pressure value detected from the pressure sensor 210 is equal to or lower than the predetermined high vacuum value P2 (step S9). The inert gas supply control unit 54 repeats step S9 until the detected pressure value becomes the high vacuum value P2 or less. When the detected pressure value becomes the high vacuum value P2 or less, the inert gas supply control unit 54 starts supplying the inert gas to the processing space PS (step S10).

When a predetermined first supply time elapses after the supply of the inert gas is started in step S10, the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step). S11). At the same time, the close contact strengthening gas supply control unit 55 starts supplying the close contact strengthening gas to the processing space PS (step S12). As a result, the inert gas in the processing space PS is replaced with the adhesion strengthening gas.

When a predetermined second supply time elapses after the supply of the adhesion strengthening gas is started in step S12, the adhesion strengthening gas supply control unit 55 stops the supply of the adhesion strengthening gas to the processing space PS (step). S13). Further, the decompression control unit 53 switches the operating state of the exhaust device 256 to a weak state (step S14).

When a predetermined maintenance time elapses after the operating state of the exhaust device 256 is switched in step S14, the inert gas supply control unit 54 starts supplying the inert gas to the processing space PS (step S15). .. Further, the decompression control unit 53 switches the operating state of the exhaust device 256 to a strong state (step S16).

When a predetermined third supply time elapses after the operating state of the exhaust device 256 is switched in step S16, the decompression control unit 53 switches the operating state of the exhaust device 256 to a weak state (step S17). Next, the decompression control unit 53 determines whether or not the pressure value detected from the pressure sensor 210 is equal to or higher than the predetermined low vacuum value P3 (step S18). The low vacuum value P3 is a value close to the above low vacuum value P1 and slightly lower than the low vacuum value P1. The decompression control unit 53 repeats step S18 until the detected pressure value becomes the low vacuum value P3 or higher. When the detected pressure value becomes the low vacuum value P3 or higher, the decompression control unit 53 stops the operation of the exhaust device 256 (step S19). Further, the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S20). Further, the temperature control control unit 56 stops the temperature control of the substrate W (step S21).

When the pressure in the processing space PS becomes equal to the atmospheric pressure, the cover elevating control unit 51 moves the cover 207 to the upper position (step S22). Further, the support pin elevating control unit 52 raises the plurality of support pins 243 (step S23). As a result, the substrate W is passed from the plurality of proximity balls 241 to the plurality of support pins 243. In that state, a transfer device (not shown) receives the substrate W from the plurality of support pins 243 and carries out the substrate W from the adhesion strengthening processing device 100. As a result, a series of operations of the adhesion strengthening processing device 100 is completed.

[3] Change in pressure in the processing space FIG. 4 is a diagram for explaining a change in pressure in the processing space PS. FIG. 4 shows the change in the operating state of the exhaust device 256 and the supply timing of the inert gas and the adhesion strengthening gas along with the change in the pressure of the processing space PS. In FIG. 4, the horizontal axis represents time, and the vertical axis represents the pressure of the processing space PS and the flow rate of the inert gas and the adhesion strengthening gas.

In the example of FIG. 4, the time point t1 is the time point after the airtight processing space PS is formed and the pressure of the processing space PS is lowered to the low vacuum value P1 (Yes in step S7 of FIG. 3). .. The low vacuum value P1 is, for example, a value in the range of -4 kPa or more and -1 kPa or less, for example, -2 kPa. At the time point t1, the operating state of the exhaust device 256 is switched to the strong state (step S8 in FIG. 3). As a result, the pressure in the processing space PS further decreases, and the pressure in the processing space PS reaches the high vacuum value P2 at the time point t2 (Yes in step S9 in FIG. 3). The high vacuum value P2 is an example of a third value. The high vacuum value P2 is, for example, a value in the range of −25 kPa or more and −18 kPa or less, for example, −20 kPa.

When the pressure of the processing space PS reaches the high vacuum value P2 at the time point t2, the supply of the inert gas to the processing space PS is started (step S10 in FIG. 3). In this case, the pressure of the processing space PS increases due to the supply of the inert gas. When the displacement by the exhaust device 256 and the supply of the inert gas are in equilibrium, the pressure in the processing space PS converges to the intermediate value P4. The intermediate value P4 is lower than the low vacuum value P1 and higher than the high vacuum value P2. The intermediate value P4 is an example of the first value. The intermediate value P4 is, for example, a value in the range of −10 kPa or more and −5 kPa or less, for example, −7 kPa.

At the time point t3, the supply of the inert gas is stopped and the supply of the adhesion strengthening gas is started (steps S11 and S12 in FIG. 3). In this example, the flow rate of the adhesion strengthening gas is smaller than the flow rate of the inert gas. Therefore, the pressure in the processing space PS drops from the intermediate value P4. When the displacement by the exhaust device 256 and the supply of the adhesion strengthening gas are in equilibrium, the pressure in the processing space PS converges to the intermediate value P5. The median value P5 is higher than the high vacuum value P2 and lower than the median value P4. The intermediate value P5 is an example of the second value. The intermediate value P5 is, for example, a value in the range of −20 kPa or more and −10 kPa or less, for example, −15 kPa.

At the time point t4, the supply of the close contact strengthening gas is stopped and the operating state of the exhaust device 256 is switched to the weak state (steps S13 and S14 in FIG. 3). In this case, the pressure of the processing space PS is maintained at the intermediate value P5 in a state where the processing space PS is filled with the adhesion strengthening gas. During the period from the time point t3 to the time point t4, the adhesion strengthening agent is applied to the surface to be treated of the substrate W. As a result, the hydrophobicity of the surface to be treated of the substrate W is increased. In a later step, a treated film (for example, a resist film) is formed on the surface to be treated of the substrate W. By applying the adhesion strengthening agent, the adhesion between the surface to be treated of the substrate W and the treated film is ensured.

At the time point t5, the supply of the inert gas is started and the operating state of the exhaust device 256 is switched to the strong state (steps S15 and S16 in FIG. 3). As a result, the pressure in the processing space PS rises again and converges to the intermediate value P4. In this example, the flow rate of the inert gas in the period from the time point t5 to the time point t7 is equal to the flow rate of the inert gas in the period from the time point t2 to the time point t3, but the inert gas in the period from the time point t5 to the time point t7. The flow rate of the inert gas may be different from the flow rate of the inert gas in the period from the time point t3 to the time point t4.

At the time point t6, the operating state of the exhaust device 256 is switched to the weak state (step S17 in FIG. 3). As a result, the pressure in the processing space PS further increases. When the pressure of the processing space PS reaches the low vacuum value P3 at the time point t7, the operation of the exhaust device 256 is stopped (step S19 in FIG. 3) and the supply of the inert gas is stopped (step S20 in FIG. 3). ).

As described above, in the present embodiment, after the pressure of the processing space PS is lowered to the high vacuum value P2, the pressure of the processing space PS rises to the intermediate value P4 by supplying the inert gas to the processing space PS. do. In that state, the supply of the inert gas is stopped and the supply of the adhesion strengthening gas is started, so that the pressure of the processing space PS drops from the intermediate value P4 to the intermediate value P5.

FIG. 5 is a diagram for explaining a comparative example of the present invention. Similar to FIG. 4, FIG. 5 shows the change in the operating state of the exhaust device 256, and the supply timing of the inert gas and the adhesion strengthening gas, as well as the change in the pressure of the processing space PS.

The comparative example of FIG. 5 differs from the example of FIG. 4 in that the inert gas is not supplied before the adhesion strengthening gas is supplied. Specifically, the time point t11 is the time point after the airtight processing space PS is formed and the pressure of the processing space PS is lowered to the low vacuum value P1 as in the time point t1 of FIG. During the period from the time point t11 to the time point t12, the pressure of the processing space PS is lowered from the low vacuum value P1 to the high vacuum value P2. The adhesion strengthening gas is supplied to the processing space PS from the time point t12 to the time point t13, and the pressure of the processing space PS is maintained at the intermediate value P5 from the time point t13 to the time point t14. The inert gas is supplied to the processing space PS from the time point t14 to the time point t15, and the pressure of the processing space PS rises from the intermediate value P4 to the low vacuum value P3 during the period from the time point t15 to the time point 16.

In the comparative example of FIG. 5, the supply of the adhesion strengthening gas is started in a state where the pressure of the processing space PS is the high vacuum value P2. In this case, the adhesion strengthening gas introduced into the processing space PS moves at high speed from the gas flow path 213 located above the center of the substrate W in FIG. 1 toward the exhaust slit 251 located outside the substrate W. do. Therefore, the adhesion strengthening gas tends to come into contact with the peripheral edge of the substrate W in a concentrated manner. As a result, the amount of the adhesion strengthening agent applied per unit area at the peripheral portion of the substrate W becomes larger than the amount of the adhesion strengthening agent applied per unit area at the central portion of the substrate W. As a result, the hydrophobicity of the surface to be treated of the substrate W varies.

Further, when the supply of the adhesion strengthening gas is started in a state where the pressure of the processing space PS is low, the pressure of the processing space PS tends to vary. Therefore, the flow of the adhesion strengthening gas in the processing space PS is not stable, and it becomes difficult to control the amount of the adhesion strengthening agent applied to the substrate W.

On the other hand, in the present embodiment, the supply of the adhesion strengthening gas is started in a state where the pressure of the processing space PS is adjusted to the intermediate value P4, which is relatively high. As a result, the increase in the flow velocity of the adhesion strengthening gas in the processing space PS is suppressed. As a result, the adhesion strengthening gas gently spreads from the open end 213a of the gas flow path 213 to the entire processing space PS. Therefore, the adhesion strengthening gas uniformly contacts the entire surface to be processed of the substrate W. Therefore, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate W. Thereby, the hydrophobicity of the surface to be treated of the substrate W can be uniformly adjusted.

Further, the variation in the pressure of the processing space PS at the time of supplying the adhesion strengthening gas is suppressed. As a result, the flow of the adhesion strengthening gas is stable, and the amount of the adhesion strengthening agent applied to the substrate W can be appropriately controlled.

Further, in the present embodiment, the inert gas is supplied to the processing space PS after the pressure of the processing space PS is lowered to the high vacuum value P2. In this case, impurities such as liquid remaining in the processing space PS are efficiently removed. As a result, the inert gas can be quickly replaced with the adhesion-enhancing gas when the adhesion-enhancing gas is supplied. Further, since impurities are prevented from being mixed in the adhesion strengthening gas, the processing accuracy of the substrate W by the adhesion strengthening processing device 100 becomes higher.

Further, in the present embodiment, the flow rate of the adhesion strengthening gas is smaller than the flow rate of the inert gas, and the pressure of the treatment space PS at the time of supplying the inert gas (intermediate value P4) is larger than the pressure of the treatment space PS at the time of supplying the adhesion strengthening gas. Pressure (intermediate value P5) is low. As a result, the amount of adhesion strengthening gas used can be reduced. Further, since the increase in the flow velocity of the adhesion strengthening gas can be more reliably suppressed, the uniformity of application of the adhesion strengthening agent to the entire surface to be treated of the substrate W can be further improved.

[4] Other Embodiments In the above embodiment, the supply of the inert gas is started after the pressure of the processing space PS is lowered to the high vacuum value P2 by the exhaust device 256, but the present invention is limited to this. No. For example, at time t1 in FIG. 4, the operating state of the exhaust device 256 may be switched to the strong state and the supply of the inert gas may be started. In this case, the pressure in the processing space PS drops from the low vacuum value P1 to the intermediate value P4.

In the above embodiment, the inert gas is supplied so that the pressure of the processing space PS becomes the intermediate value P4, and the adhesion strengthening gas is supplied so that the pressure of the processing space PS becomes the intermediate value P5 lower than the intermediate value P4. However, the present invention is not limited to this. For example, the flow rates of the inert gas and the adhesion strengthening gas may be set so that the pressure of the treatment space PS when the inert gas is supplied and the pressure of the treatment space PS when the adhesion strengthening gas is supplied are equal to each other. Further, the flow rates of the inert gas and the adhesion strengthening gas may be set so that the pressure of the treatment space PS at the time of supplying the adhesion strengthening gas is higher than the pressure of the treatment space PS at the time of supplying the inert gas.

In the above embodiment, the operating state of the exhaust device 256 is before the supply of the inert gas (the period from the time point t1 to the time point t2 in FIG. 4) and when the inert gas is supplied (from the time point t2 to the time point t3 in FIG. 4). The operating state of the exhaust device 256 may be switched during these periods, although the period is maintained constant during the period of For example, the operating state of the exhaust device 256 may be switched to a weak state at least during the supply of the inert gas and the supply of the adhesion strengthening gas. Alternatively, the operating state of the exhaust device 256 may be switchable in three or more stages.

In the above embodiment, an adhesion strengthening agent made of HMDS is used as the organic material, but if it is possible to increase the hydrophobicity of the substrate W, the adhesion strengthening made of another organic material such as TEMSMA (trimethylsilyldimethylamine) is used. Agents may be used. Further, in the above embodiment, the nitrogen gas is used as the inert gas, but another inert gas that does not affect the adhesion strengthening agent may be used.

[5] Correspondence between Each Component of Claim and Each Element of Embodiment Hereinafter, an example of correspondence between each component of claim and each element of embodiment will be described. Not limited to the example.

In the above embodiment, the adhesion strengthening processing device 100 is an example of the adhesion strengthening processing device, the chamber 201 is an example of the chamber, the processing space PS is an example of the processing space, and the exhaust device 256 is an example of the decompression unit. The inert gas supply unit Q1 is an example of the inert gas supply unit, the adhesion strengthening gas supply unit Q2 is an example of the adhesion strengthening gas supply unit, and the intermediate value P4 is an example of the first value. The intermediate value P5 is an example of the second value, and the high vacuum value P2 is an example of the third value.

As each component of the claim, various other components having the structure or function described in the claim can also be used.
[6] Reference form
(1) The close contact strengthening processing apparatus according to the first reference embodiment includes a chamber that forms a processing space in which a substrate is housed, a decompression unit that reduces the pressure in the processing space by discharging gas from the processing space, and processing. An inert gas supply unit and an inert gas supply unit that supply an inert gas to the processing space while the gas is being discharged by the decompression unit so that the pressure in the space becomes the first value lower than the atmospheric pressure. After the inert gas is supplied to the treatment space, the adhesion strengthening agent is applied to the treatment space in a state where the gas is discharged by the decompression part so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. It is provided with a close contact strengthening gas supply unit that supplies the close contact strengthening gas including.
In this adhesion strengthening treatment apparatus, since the inert gas is supplied to the treatment space while the gas is discharged from the treatment space, the decrease in pressure in the treatment space is suppressed. Since the adhesion strengthening gas is supplied to the treatment space in that state, the increase in the flow velocity of the adhesion strengthening gas in the treatment space is suppressed, and the adhesion strengthening gas gradually spreads in the treatment space. As a result, it is possible to prevent the adhesion strengthening gas from being intensively contacted with a part of the surface to be processed of the substrate. As a result, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate.
(2) The adhesion strengthening gas supply unit may start supplying the adhesion strengthening gas to the treatment space when the supply of the inert gas to the treatment space by the inert gas supply unit is stopped.
In this case, the decrease in the concentration of the adhesion strengthening gas in the treatment space is suppressed. As a result, the amount of the adhesion strengthening agent applied to the surface to be treated of the substrate can be controlled with high accuracy.
(3) The inert gas supply unit supplies the inert gas to the processing space at the first flow rate, and the adhesion strengthening gas supply unit supplies the adhesion strengthening gas to the treatment space at a second flow rate smaller than the first flow rate. May be supplied to.
In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.
(4) The decompression unit reduces the pressure in the treatment space to a third value lower than the first value and lower than the second value, and the inert gas supply unit reduces the pressure in the treatment space by the decompression unit. The inert gas may be supplied to the treatment space so that the pressure in the treatment space rises from the third value to the first value after the pressure drops to the third value.
In this case, since the inert gas is supplied after the pressure in the treatment space is sufficiently reduced, impurities such as liquid remaining in the treatment space are efficiently removed. As a result, the inert gas can be quickly replaced with the adhesion-enhancing gas when the adhesion-enhancing gas is supplied. Further, since impurities are prevented from being mixed in the adhesion strengthening gas, the processing accuracy of the substrate is further improved.
(5) The second value is lower than the first value, and the adhesion strengthening gas supply unit supplies the adhesion strengthening gas to the treatment space so that the pressure in the treatment space decreases from the first value to the second value. You may.
In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.
(6) In the adhesion strengthening treatment method according to the second reference embodiment, the step of accommodating the substrate in the treatment space formed by the chamber and the treatment so that the pressure in the treatment space becomes the first value lower than the atmospheric pressure. After the step of supplying the inert gas to the treatment space while discharging the gas from the space and the step of supplying the inert gas, the treatment space is set so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. It includes a step of supplying the adhesion strengthening gas containing the adhesion strengthening agent to the treatment space while discharging the gas from the treatment space.
According to this method, since the inert gas is supplied to the processing space while the gas is discharged from the processing space, the decrease in pressure in the processing space is suppressed. Since the adhesion strengthening gas is supplied to the treatment space in that state, the increase in the flow velocity of the adhesion strengthening gas in the treatment space is suppressed, and the adhesion strengthening gas gradually spreads in the treatment space. As a result, it is possible to prevent the adhesion strengthening gas from being intensively contacted with a part of the surface to be processed of the substrate. As a result, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate.
(7) The step of supplying the adhesion-enhancing gas may include starting the supply of the adhesion-enhancing gas to the treatment space when the supply of the inert gas to the treatment space is stopped.
In this case, the decrease in the concentration of the adhesion strengthening gas in the treatment space is suppressed. As a result, the amount of the adhesion strengthening agent applied to the surface to be treated of the substrate can be controlled with high accuracy.
(8) The step of supplying the inert gas includes supplying the inert gas to the treatment space at the first flow rate, and the step of supplying the adhesion strengthening gas is smaller than the first flow rate of the adhesion strengthening gas. It may include feeding the processing space at a second flow rate.
In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.
(9) The adhesion strengthening treatment method further includes a step of lowering the pressure in the treatment space to a third value lower than the first value and lower than the second value before the step of supplying the inert gas. The step of supplying the inert gas may include supplying the treatment space with the inert gas such that the pressure in the treatment space rises from a third value to a first value.
In this case, since the inert gas is supplied after the pressure in the treatment space is sufficiently reduced, impurities such as liquid remaining in the treatment space are efficiently removed. As a result, the inert gas can be quickly replaced with the adhesion-enhancing gas when the adhesion-enhancing gas is supplied. Further, since impurities are prevented from being mixed in the adhesion strengthening gas, the processing accuracy of the substrate is further improved.
(10) The second value is lower than the first value, and in the step of supplying the adhesion strengthening gas, the adhesion strengthening gas is applied to the treatment space so that the pressure in the treatment space decreases from the first value to the second value. May include supplying.
In this case, the adhesion strengthening agent can be uniformly applied to the entire surface to be treated of the substrate while reducing the amount of the adhesion strengthening gas used.

51 ... Cover elevating control unit, 52 ... Support pin elevating control unit, 53 ... Decompression control unit, 54 ... Inert gas supply control unit, 55 ... Adhesion strengthening gas supply control unit, 56 ... Temperature control unit, 57 ... Time control Unit, 100 ... Adhesion strengthening processing device, 150 ... Control unit, 201 ... Chamber, 205 ... Plate, 207 ... Cover, 209 ... Cover elevating mechanism, 210 ... Pressure sensor, 213 ... Gas flow path, 241 ... Proximity ball, 243 ... Support pin, 247 ... Support pin elevating mechanism, 249 ... Temperature control section, 251 ... Exhaust slit, 253 ... Exhaust port, 256 ... Exhaust device, PS ... Processing space, Q1 ... Inert gas supply section, Q2 ... Adhesion strengthening gas Supply unit, W ... Substrate

Claims (10)

A chamber that forms a processing space in which the substrate is housed,
A decompression unit that reduces the pressure in the processing space by discharging gas from the processing space,
An inert gas supply unit that supplies an inert gas to the processing space while the gas is being discharged by the decompression unit so that the pressure in the processing space becomes a first value lower than the atmospheric pressure.
After the inert gas is supplied to the processing space by the inert gas supply unit, the gas is discharged by the decompression unit so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. Bei example the adhesion-enhancing gas supply unit for supplying the adhesion enhancing gas containing an adhesion enhancing agent in the processing space in the state,
The second value is lower than the first value,
The adhesion strengthening gas supply unit is an adhesion strengthening processing apparatus that supplies the adhesion strengthening gas to the processing space so that the pressure in the processing space decreases from the first value to the second value. The adhesion-enhanced gas supply unit according to claim 1, wherein the adhesion-enhancing gas supply unit starts supplying the adhesion-enhancing gas to the treatment space when the supply of the inert gas to the treatment space by the inert gas supply unit is stopped. Adhesion strengthening processing device. A chamber that forms a processing space in which the substrate is housed,
A decompression unit that reduces the pressure in the processing space by discharging gas from the processing space,
An inert gas supply unit that supplies an inert gas to the processing space while the gas is being discharged by the decompression unit so that the pressure in the processing space becomes a first value lower than the atmospheric pressure.
After the inert gas is supplied to the processing space by the inert gas supply unit, the gas is discharged by the decompression unit so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. It is provided with an adhesion strengthening gas supply unit that supplies the adhesion strengthening gas containing the adhesion strengthening agent to the processing space in the state.
The inert gas supply unit supplies the inert gas to the processing space at the first flow rate.
The adhesion-enhancing gas supply unit is supplied to the processing space the adhesion-enhancing gas in the smaller second flow rate than the first flow rate, adhesion enhancement processor. The decompression unit reduces the pressure in the processing space to a third value that is lower than the first value and lower than the second value.
In the inert gas supply unit, the pressure in the processing space is reduced to the third value by the decompression unit, and then the pressure in the processing space is increased from the third value to the first value. The adhesion strengthening treatment apparatus according to any one of claims 1 to 3, which supplies an inert gas to the treatment space. The second value is lower than the first value,
The adhesion strengthening processing apparatus according to claim 3 , wherein the adhesion strengthening gas supply unit supplies the adhesion strengthening gas to the treatment space so that the pressure in the treatment space decreases from the first value to the second value. .. The step of accommodating the substrate in the processing space formed by the chamber,
A step of supplying an inert gas to the processing space while discharging the gas from the processing space so that the pressure in the processing space becomes a first value lower than the atmospheric pressure.
After the step of supplying the inert gas, the treatment space is discharged from the treatment space and adhered to the treatment space containing an adhesion enhancer so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. viewing including the step of supplying the strengthening gas,
The second value is lower than the first value,
The step of supplying the adhesion strengthening gas comprises supplying the adhesion strengthening gas to the treatment space so that the pressure in the treatment space decreases from the first value to the second value. .. The adhesion strengthening according to claim 6, wherein the step of supplying the adhesion strengthening gas includes starting the supply of the adhesion strengthening gas to the treatment space when the supply of the inert gas to the treatment space is stopped. Processing method. The step of accommodating the substrate in the processing space formed by the chamber,
A step of supplying an inert gas to the processing space while discharging the gas from the processing space so that the pressure in the processing space becomes a first value lower than the atmospheric pressure.
After the step of supplying the inert gas, the treatment space is discharged from the treatment space and adhered to the treatment space containing an adhesion enhancer so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure. Including the step of supplying fortified gas
The step of supplying the inert gas comprises supplying the inert gas to the processing space at a first flow rate.
The adhesion step of providing enhanced gas, including that supplied to the processing space the adhesion-enhancing gas in the smaller second flow rate than the first flow rate, adhesion enhancement processing method. Prior to the step of supplying the inert gas, a step of lowering the pressure in the processing space to a third value lower than the first value and lower than the second value is further included.
The step of supplying the inert gas comprises supplying the inert gas to the treatment space so that the pressure in the treatment space rises from the third value to the first value. The adhesion strengthening treatment method according to any one of 8. The second value is lower than the first value,
Supplying the adhesion enhancing gas includes the pressure of the processing space to supply the adhesion enhancing gas into the processing space so as to reduce the second value from the first value, according to claim 8 Adhesion strengthening treatment method.

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