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JP6935705B2 - Image forming device - Google Patents
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JP6935705B2 - Image forming device - Google Patents

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JP6935705B2
JP6935705B2 JP2017170577A JP2017170577A JP6935705B2 JP 6935705 B2 JP6935705 B2 JP 6935705B2 JP 2017170577 A JP2017170577 A JP 2017170577A JP 2017170577 A JP2017170577 A JP 2017170577A JP 6935705 B2 JP6935705 B2 JP 6935705B2
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photoconductor
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雅夫 大森
雅夫 大森
伸英 稲葉
伸英 稲葉
佳月 北沢
佳月 北沢
木島 勝
勝 木島
小林 順一
順一 小林
安藤 正登
正登 安藤
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Fujifilm Business Innovation Corp
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Fuji Xerox Co Ltd
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Description

本発明は、画像形成装置に関する。 The present invention relates to an image forming apparatus.

特許文献1には、導電性基体を介して感光層が形成された感光体を使用して画像形成を行う電子写真方式の画像形成装置において、感光体表面を帯電し、その帯電後に感光体表面の一部分を露光し、その露光後に感光体表面を再帯電し、その再帯電後に導電性基体に接続された電流計により再帯電で感光体に流れる流れ込み電流を測定し、その測定された電流値を感光体の表面電位情報として認識することを特徴とする感光体の表面電位認識方法が開示されている。特許文献1に係る表面電位認識方法では、帯電電位を部分的に除電して再帯電時に流れる電流を計測して、感光体の軸方向の帯電電位むらを検知している。 Patent Document 1 describes that in an electrophotographic image forming apparatus that forms an image using a photoconductor on which a photosensitive layer is formed via a conductive substrate, the surface of the photoconductor is charged, and after the charging, the surface of the photoconductor is charged. The surface of the photoconductor is recharged after the exposure, and after the recharge, the inflow current flowing through the photoconductor by recharging is measured by an ammeter connected to the conductive substrate, and the measured current value is measured. Is disclosed as a method for recognizing the surface potential of a photoconductor, which comprises recognizing the above as surface potential information of the photoconductor. In the surface potential recognition method according to Patent Document 1, the charging potential is partially removed and the current flowing during recharging is measured to detect the charging potential unevenness in the axial direction of the photoconductor.

特許文献2には、回転駆動する感光体と、感光体の表面を帯電する帯電手段と、帯電された感光体の表面に静電潜像を形成する露光手段と、静電潜像をトナーにより現像する現像手段と、を少なくとも有する画像形成装置において、帯電手段が印加する帯電電流値を測定する帯電電流値測定手段と、帯電手段によって感光体の全表面を帯電し、感光体を該感光体の長手方向に2つ以上の領域に分割したそれぞれを測定領域とし、測定領域における少なくとも2つにつき、露光手段によって露光した場合に帯電電流値測定手段によって測定される帯電電流値を求め、一の測定領域の帯電電流値と、その他の測定領域の帯電電流値との相違を評価した評価値を算出する評価値算出手段と、評価値に基づいて、感光体が故障または故障に近い状態か否かを判定する故障状態判定手段と、を少なくとも有する故障検出装置を備えたことを特徴とする画像形成装置が開示されている。特許文献2に係る画像形成装置では、帯電電位を部分的に除電して再帯電時に流れる電流を計測し、感光体の軸方向膜厚むらを検知しているが、露光は短冊状に行っており検知領域を連続的に移動させてはいない。 Patent Document 2 describes a photoconductor that is driven to rotate, a charging means that charges the surface of the photoconductor, an exposure means that forms an electrostatic latent image on the surface of the charged photoconductor, and an electrostatic latent image with a toner. In an image forming apparatus having at least a developing means for developing, the entire surface of the photoconductor is charged by the charging current value measuring means for measuring the charging current value applied by the charging means and the charging means, and the photoconductor is subjected to the photoconductor. Each of the two or more regions divided in the longitudinal direction of the above is used as a measurement region, and at least two of the measurement regions are obtained by obtaining the charge current value measured by the charge current value measuring means when exposed by the exposure means. An evaluation value calculation means for calculating an evaluation value that evaluates a difference between the charge current value in the measurement area and the charge current value in another measurement area, and whether or not the photoconductor is in a state of failure or near failure based on the evaluation value. There is disclosed an image forming apparatus including a failure detecting device having at least a failure state determining means for determining whether or not the image is generated. In the image forming apparatus according to Patent Document 2, the charging potential is partially eliminated, the current flowing during recharging is measured, and the axial film thickness unevenness of the photoconductor is detected. However, the exposure is performed in a strip shape. The cage detection area is not continuously moved.

特開平10−49008号公報Japanese Unexamined Patent Publication No. 10-49008 特開2013−190626号公報Japanese Unexamined Patent Publication No. 2013-190626

本発明は、再帯電電流のプロファイルから像保持体の磨耗を検知する場合の露光工程において、分割された領域をずらしながら露光する場合と比較して、磨耗の検知精度をより高くすることを目的とする。 An object of the present invention is to improve the wear detection accuracy in the exposure process when the wear of the image holder is detected from the profile of the recharge current as compared with the case of exposing while shifting the divided regions. And.

上記の目的を達成するために、請求項1に記載の画像形成装置は、回転軸を中心として回転する像保持体と、前記像保持体の表面を帯電させる帯電手段と、前記帯電時に流れる帯電電流を測定する測定手段と、表面を帯電された前記像保持体に光を照射して露光し静電潜像を形成する露光手段と、前記像保持体の表面を初期帯電させるように前記帯電手段を制御し、前記回転軸方向の予め定められた幅の光の照射領域を前記回転軸に沿って移動させつつ帯電された前記像保持体の表面を露光し露光領域を形成するように前記露光手段を制御し、露光された前記像保持体の表面を再度前記帯電手段により帯電させたときに流れる再帯電電流を測定するように前記測定手段を制御し、前記再帯電電流を用いて前記像保持体の異常を検知すると共に、前記初期帯電において発生する帯電履歴による前記再帯電電流の誤差を補正するように前記露光手段または前記帯電手段を制御し、前記像保持体を初期帯電する前に予め定められた領域を露光して補正露光領域を形成するように前記露光手段を制御する検知手段と、を含むものである。 In order to achieve the above object, the image forming apparatus according to claim 1 includes an image holder that rotates about an axis of rotation, a charging means that charges the surface of the image holder, and a charge that flows during the charge. The measuring means for measuring the current, the exposure means for irradiating the surface of the charged image holder with light to expose it to form an electrostatic latent image, and the charging so as to initially charge the surface of the image holder. The means is controlled so that the surface of the charged image holder is exposed to form an exposed region while moving an irradiation region of light having a predetermined width in the direction of the rotation axis along the rotation axis. The measuring means is controlled so as to control the recharging means and measure the recharging current that flows when the exposed surface of the image holder is recharged by the charging means, and the recharging current is used to measure the recharging current. Before the image holder is initially charged by controlling the exposure means or the charging means so as to detect an abnormality of the image holder and correct an error of the recharge current due to the charging history generated in the initial charge. Includes a detection means that controls the exposure means so as to expose a predetermined area to form a correction exposure area.

また、請求項2に記載の発明は、請求項1に記載の発明において、前記検知手段は、前記照射領域を予め定められた速度で等速に移動させるものである。 Further, the invention according to claim 2 is the invention according to claim 1, wherein the detection means moves the irradiation region at a predetermined speed at a constant speed.

また、請求項3に記載の発明は、請求項2に記載の発明において、前記予め定められた速度は、前記像保持体の1回転する間に前記照射領域が前記予め定められた幅だけ移動する速度であるものである。 Further, in the invention according to claim 3, in the invention according to claim 2, the predetermined speed moves the irradiation region by the predetermined width during one rotation of the image holder. It is the speed to do.

また、請求項に記載の発明は、請求項2に記載の発明において、前記予め定められた速度は、前記像保持体の1回転する間に前記照射領域が前記予め定められた幅だけ移動する速度より大きく、前記像保持体の1回転する間に前記露光手段が前記像保持体の前記回転軸方向の長さだけ移動する速度以下であるものである。 Further, in the invention according to claim 4 , in the invention according to claim 2, the predetermined speed moves the irradiation region by the predetermined width during one rotation of the image holder. The speed is greater than the speed at which the image holder moves, and is equal to or less than the speed at which the exposure means moves by the length of the image holder in the rotation axis direction during one rotation of the image holder.

また、請求項に記載の発明は、請求項に記載の発明において、前記検知手段は、前記露光領域と重ならない領域に前記補正露光領域が形成されるように前記露光手段を制御するものである。 The invention according to claim 5 is the invention according to claim 1 , wherein the detection means controls the exposure means so that the correction exposure region is formed in a region that does not overlap with the exposure region. Is.

また、請求項に記載の発明は、請求項に記載の発明において、前記検知手段は、前記露光領域による帯電履歴の領域と重ならない領域に前記補正露光領域が形成されるように前記露光手段をさらに制御するものである。 The invention according to claim 6 is the invention according to claim 5 , wherein the detection means is exposed so that the corrected exposure region is formed in a region that does not overlap with the region of the charging history of the exposure region. It further controls the means.

また、請求項に記載の発明は、請求項に記載の発明において、前記再帯電電流の測定は前記像保持体の回転に伴って1または複数回転おきに行われ、前記検知手段は、複数回の前記再帯電電流の測定の各々の間に前記初期帯電された領域を再帯電させるように前記帯電手段を制御するものである。 Further, in the invention according to claim 7 , in the invention according to claim 1 , the measurement of the recharge current is performed every one or more rotations with the rotation of the image holder, and the detection means is used. The charging means is controlled so as to recharge the initially charged region during each of the plurality of measurements of the recharging current.

また、請求項に記載の発明は、請求項に記載の発明において、前記検知手段は、前記像保持体の1または複数回転分の前記初期帯電を行った後前記再帯電が完了するまで前記照射領域の移動を停止させ、次の前記初期帯電後の露光を停止させた位置から開始するように、前記露光手段を制御するものである。 The invention according to claim 8 is the invention according to claim 7 , wherein the detection means performs the initial charge for one or more rotations of the image holder until the recharge is completed. The exposure means is controlled so that the movement of the irradiation region is stopped and the next exposure after the initial charge is stopped.

請求項1に記載の発明によれば、再帯電電流のプロファイルから像保持体の磨耗を検知する場合の露光工程において、分割された領域をずらしながら露光する場合と比較して、磨耗の検知精度がより高くなる、という効果を奏する。
更に、請求項1に記載の発明によれば、検知手段が初期帯電において発生する帯電履歴による再帯電電流の誤差を補正するように露光手段または帯電手段を制御しない場合と比較して、再帯電電流の計測精度が向上する、という効果を奏する。
更に、請求項1に記載の発明によれば、複数回の再帯電電流の測定の各々の間に初期帯電された領域を再度帯電させて再帯電電流の計測誤差を補正する場合と比較して、再帯電電流の計測ステップ数が削減される、という効果を奏する。
According to the first aspect of the present invention, in the exposure step in the case of detecting the wear of the image holder from the profile of the recharge current, the wear detection accuracy is compared with the case of exposing while shifting the divided region. Has the effect of becoming higher.
Further, according to the first aspect of the present invention, the recharging means is not controlled so as to correct the error of the recharging current due to the charging history generated in the initial charging, as compared with the case where the detecting means does not control the exposure means or the charging means. It has the effect of improving the current measurement accuracy.
Further, according to the first aspect of the present invention, as compared with the case where the initially charged region is recharged during each of the plurality of recharge current measurements to correct the recharge current measurement error. This has the effect of reducing the number of steps for measuring the recharge current.

請求項2に記載の発明によれば、露光手段を不均一な速度で移動させる場合と比較して、像保持体の軸方向と回転方向に対して均一な露光領域が得られる、という効果を奏する。 According to the second aspect of the present invention, an effect that a uniform exposure region can be obtained in the axial direction and the rotation direction of the image holder can be obtained as compared with the case where the exposure means is moved at a non-uniform speed. Play.

請求項3に記載の発明によれば、予め定められた速度が、像保持体の1回転する間に露光手段が予め定められた幅だけ移動する速度よりも速い場合と比較して、再帯電電流の計測精度がより向上する、という効果を奏する。 According to the third aspect of the present invention, the recharging is performed as compared with the case where the predetermined speed is faster than the speed at which the exposure means moves by the predetermined width during one rotation of the image holder. It has the effect of improving the current measurement accuracy.

請求項に記載の発明によれば、予め定められた速度が、像保持体の1回転する間に露光手段が予め定められた幅だけ移動する速度である場合と比較して、計測時間が短縮される、という効果を奏する。 According to the invention of claim 4 , the measurement time is as compared with the case where the predetermined speed is the speed at which the exposure means moves by a predetermined width during one rotation of the image holder. It has the effect of being shortened.

請求項に記載の発明によれば、検知手段が露光領域と重なる領域に補正露光領域を形成するように露光手段を制御する場合と比較して、再帯電電流の誤差の補正がより正確に行われる、という効果を奏する。 According to the invention of claim 5 , the correction of the error of the recharge current is more accurate than the case where the detection means controls the exposure means so as to form the correction exposure region in the region overlapping the exposure region. It has the effect of being done.

請求項に記載の発明によれば、検知手段が露光領域による帯電履歴の領域と重なる領域に前記補正露光領域が形成されるように前記露光手段を制御する場合と比較して、再帯電電流の誤差の補正がさらに正確に行われる、という効果を奏する。 According to the invention of claim 6 , the recharging current is compared with the case where the detecting means controls the exposure means so that the corrected exposure region is formed in the region overlapping the region of the charging history by the exposure region. This has the effect that the error is corrected more accurately.

請求項に記載の発明によれば、検知手段画が像保持体を初期帯電する前に予め定められた領域を露光して補正露光領域を形成するように露光手段を制御する場合と比較して、より計測精度が向上する、という効果を奏する。 According to the invention of claim 7 , the detection means image controls the exposure means so as to expose a predetermined region to form a correction exposure region before the image holder is initially charged. This has the effect of improving the measurement accuracy.

請求項に記載の発明によれば、検知手段が、次の初期帯電後の露光を停止させた位置と異なる位置から開始するように露光手段を制御する場合と比較して、像保持体の展開図上で斜行する直線状の露光領域が形成される、という効果を奏する。 According to the invention of claim 8 , as compared with the case where the detection means controls the exposure means so as to start the exposure after the next initial charge from a position different from the position where the exposure is stopped, the image holder It has the effect of forming a linear exposure region that is skewed on the developed view.

実施の形態に係る画像形成装置の構成の一例を示す図である。It is a figure which shows an example of the structure of the image forming apparatus which concerns on embodiment. (a)は本実施の形態に係る露光領域と検知領域の走査との関係を示す図、(b)は感光体の回転軸方向位置に対する再帯電電流および膜厚の変化を概念的に示すグラフである。(A) is a diagram showing the relationship between scanning of the exposure region and the detection region according to the present embodiment, and (b) is a graph conceptually showing changes in the recharge current and the film thickness with respect to the position in the rotation axis direction of the photoconductor. Is. 第1の実施の形態に係る画像形成装置の、(a)は検知領域の走査を説明する図、(b)は感光体の回転軸方向位置に対する再帯電電流の測定結果の一例を示すグラフである。In the image forming apparatus according to the first embodiment, (a) is a diagram for explaining scanning of the detection region, and (b) is a graph showing an example of the measurement result of the recharge current with respect to the position in the rotation axis direction of the photoconductor. be. 第2の実施の形態に係る画像形成装置の、(a)は露光領域を説明する図、(b)は感光体の回転軸方向位置に対する再帯電電流の測定結果の一例を示すグラフである。In the image forming apparatus according to the second embodiment, (a) is a diagram for explaining an exposure region, and (b) is a graph showing an example of a measurement result of a recharge current with respect to a position in the rotation axis direction of the photoconductor. (a)は露光領域と帯電履歴との関係を示す図、(b)は(a)による検知領域の走査を行った場合の再帯電電流の測定結果の一例を示すグラフである。(A) is a diagram showing the relationship between the exposure region and the charging history, and (b) is a graph showing an example of the measurement result of the recharging current when the detection region is scanned according to (a). 第2の実施の形態に係る画像形成装置の感光体膜厚の計測結果の一例を、比較例に係る画像形成装置の感光体膜厚の計測結果と比較して示すグラフである。It is a graph which shows an example of the measurement result of the photosensitive member film thickness of the image forming apparatus which concerns on 2nd Embodiment in comparison with the measurement result of the photosensitive member film thickness of the image forming apparatus which concerns on a comparative example. 第3の実施の形態に係る画像形成装置の、(a)は帯電履歴の伴う露光領域の形成について説明する図、(b)は帯電履歴の飽和を説明する図である。In the image forming apparatus according to the third embodiment, (a) is a diagram for explaining the formation of an exposure region accompanied by a charging history, and (b) is a diagram for explaining the saturation of the charging history. 第4の実施の形態に係る画像形成装置の露光領域を示すグラフの一部である。It is a part of the graph which shows the exposure area of the image forming apparatus which concerns on 4th Embodiment. 第4の実施の形態に係る画像形成装置の露光領域を示すグラフの一部である。It is a part of the graph which shows the exposure area of the image forming apparatus which concerns on 4th Embodiment. 感光体の偏磨耗に起因する画像形成におけるすじの発生について説明するための、(a)は感光体膜厚と白すじの関係を示すグラフ、(b)は感光体上の偏磨耗領域を示す図、(c)は感光体の展開図上における白すじを示す図である。In order to explain the occurrence of streaks in image formation due to uneven wear of the photoconductor, (a) is a graph showing the relationship between the photoconductor film thickness and white streaks, and (b) shows the uneven wear region on the photoconductor. FIG. 3C is a diagram showing white streaks on the developed view of the photoconductor. 帯電電流の測定原理を説明する図である。It is a figure explaining the measurement principle of a charge current. 比較例に係る画像形成装置の、(a)は露光領域を説明する図、(b)は感光体の回転軸方向位置に対する再帯電電流の変化の一例を示すグラフである。In the image forming apparatus according to the comparative example, (a) is a diagram for explaining an exposure region, and (b) is a graph showing an example of a change in the recharge current with respect to the position in the rotation axis direction of the photoconductor.

以下、図面を参照して、本発明を実施するための形態について詳細に説明する。 Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings.

[第1の実施の形態]
図1は本発明が適用された画像形成装置10の全体構成の概略図を示している。図1に示すように、画像形成装置10は、矢印A方向に定速回転する感光体12(像保持体)を備えている。
[First Embodiment]
FIG. 1 shows a schematic view of the overall configuration of the image forming apparatus 10 to which the present invention is applied. As shown in FIG. 1, the image forming apparatus 10 includes a photoconductor 12 (image holder) that rotates at a constant speed in the direction of arrow A.

この感光体12の周囲には、感光体12の回転方向に沿って、帯電部14、露光部16、現像部18、転写部20、清掃部22、除電部24が順に配設されている。 Around the photoconductor 12, a charging unit 14, an exposed unit 16, a developing unit 18, a transfer unit 20, a cleaning unit 22, and a static elimination unit 24 are arranged in this order along the rotation direction of the photoconductor 12.

すなわち、感光体12は、帯電部14によって予め定められた帯電電位VHまで表面が一様に帯電された後、露光部16によって光ビームが照射されて、感光体12上に静電潜像が形成される。露光部16によって光ビームが照射された領域の電位は、帯電電位VHよりも低い露光電位VLとなる。ただし、上記の帯電電位VHと露光電位VLの高低関係は一例であって、逆の関係であってもよい。 That is, after the surface of the photoconductor 12 is uniformly charged to the charging potential VH predetermined by the charging unit 14, a light beam is irradiated by the exposure unit 16 to generate an electrostatic latent image on the photoconductor 12. It is formed. The potential of the region irradiated with the light beam by the exposure unit 16 is an exposure potential VL lower than the charging potential VH. However, the high-low relationship between the charging potential VH and the exposure potential VL is an example, and may be the opposite relationship.

帯電部14には電源部40が接続され、電源部40は制御部42に接続されており、制御部42によって後述の再帯電電流の測定等が行われる。また、露光部16も制御部42に接続されており、制御部42によって点灯制御され、画像データに基づいて光ビームを出射するように構成されている。また、露光部16は制御部42の制御により後述の本実施の形態に係る露光領域を形成する。 The power supply unit 40 is connected to the charging unit 14, and the power supply unit 40 is connected to the control unit 42. The control unit 42 measures the recharging current, which will be described later. Further, the exposure unit 16 is also connected to the control unit 42, is lit by the control unit 42, and is configured to emit a light beam based on the image data. Further, the exposure unit 16 forms an exposure region according to the present embodiment described later under the control of the control unit 42.

露光部16によって形成された静電潜像に、現像電位Vdeveが印加された状態で現像部18からトナーが供給されて、感光体12上にトナー像が形成される。感光体12上のトナー像は、転写ローラを含む転写部20によって、図示しない用紙トレイから搬送されてきた用紙28に転写される。転写後に感光体12に残留しているトナーは清掃部22によって除去され、感光体12はイレーズランプを含む除電部24によって除電された後、再び帯電部14によって帯電されて、同様の処理を繰り返す。 Toner is supplied from the developing unit 18 in a state where the developing potential Vdev is applied to the electrostatic latent image formed by the exposed unit 16, and a toner image is formed on the photoconductor 12. The toner image on the photoconductor 12 is transferred to the paper 28 conveyed from a paper tray (not shown) by the transfer unit 20 including the transfer roller. The toner remaining on the photoconductor 12 after the transfer is removed by the cleaning unit 22, the photoconductor 12 is charged by the static elimination unit 24 including the erase lamp, and then charged again by the charging unit 14, and the same process is repeated. ..

一方、トナー像が転写された用紙28は、加圧ローラ30Aと加熱ローラ30Bを含む定着部30に搬送されて定着処理が施される。これにより、トナー像が定着されて、用紙28上に画像データに基づく画像が形成される。画像が形成された用紙28は装置外へ排出される。 On the other hand, the paper 28 on which the toner image is transferred is conveyed to the fixing portion 30 including the pressurizing roller 30A and the heating roller 30B and subjected to the fixing process. As a result, the toner image is fixed and an image based on the image data is formed on the paper 28. The paper 28 on which the image is formed is discharged to the outside of the device.

ところで、感光体12の表面上の磨耗によって画像形成装置10によって形成された画像にすじが発生する場合がある。すじの発生原因には様々考えられるが、一例として感光体12の表面に形成された偏磨耗が挙げられる。図10を参照して、偏磨耗に起因するすじの発生原理について説明する。 By the way, the image formed by the image forming apparatus 10 may have streaks due to abrasion on the surface of the photoconductor 12. There are various possible causes for the occurrence of streaks, and one example is uneven wear formed on the surface of the photoconductor 12. The principle of streak generation due to uneven wear will be described with reference to FIG.

図10(a)は、感光体12の回転軸方向の膜厚の変化を示している。図10(a)に示す符号「N」は初期膜厚を、符号「A」は稼働中の膜厚である経時膜厚を、符号「E」は寿命膜厚を各々示している。当初初期膜厚Nの状態で稼動を開始した感光体12の膜厚は稼動の継続とともに経時膜厚Aのように変化し、他の領域と比較して特に膜厚の薄くなった偏磨耗領域Awが発生する場合がある。偏磨耗領域Awは、通常図10(b)に示すように、感光体12の周囲に亘ってある幅で形成される場合が多い。 FIG. 10A shows a change in the film thickness of the photoconductor 12 in the rotation axis direction. Reference numeral "N" in FIG. 10A indicates an initial film thickness, reference numeral "A" indicates a film thickness over time, which is a film thickness during operation, and reference numeral "E" indicates a lifetime film thickness. The film thickness of the photoconductor 12 that started operation with the initial film thickness N initially changed like the film thickness A with time as the operation continued, and the uneven wear region was particularly thin compared to other regions. Aw may occur. The uneven wear region Aw is usually formed with a certain width over the periphery of the photoconductor 12, as shown in FIG. 10 (b).

偏磨耗領域Awにおいては帯電部14による帯電の際の帯電電荷量が多くなるので、露光部16による露光の際の露光電位が正常な露光電位VLよりも上昇する。すると、露光電位と現像電位Vdeveとの差が小さくなるので偏磨耗領域Awではトナーの付着量が他の領域に比べて減少し、そのために感光体12の表面の展開図Pで見た場合に図10(c)に示すような白すじWLが発生する。このようなすじは画像形成装置10で形成される画像に欠陥を発生させる原因となるため、視認できる程度となる前に画像形成装置10において警告を発出し、予防交換することが望まれる。 In the uneven wear region Aw, the amount of charged charge during charging by the charging unit 14 is large, so that the exposure potential during exposure by the exposure unit 16 is higher than the normal exposure potential VL. Then, since the difference between the exposure potential and the development potential Vdeve becomes small, the amount of toner adhered in the uneven wear region Aw is smaller than that in the other regions, and therefore, when viewed in the developed view P of the surface of the photoconductor 12. White streaks WL as shown in FIG. 10 (c) are generated. Since such streaks cause defects in the image formed by the image forming apparatus 10, it is desired that the image forming apparatus 10 issue a warning and perform preventive replacement before the image is visible.

感光体12の偏磨耗による異常の発生を予測するためには感光体膜の膜厚を計測する必要がある。以下、図11を参照し、感光体12の感光体膜の膜厚(以下、「感光体膜厚」)の計測方法の一例について述べる。図11は感光体膜厚の計測系を示す図であり、図11には感光体12、帯電部14、帯電部14に接続された電源部40、および清掃部22としてのブレードが示されている。 It is necessary to measure the film thickness of the photoconductor film in order to predict the occurrence of an abnormality due to uneven wear of the photoconductor 12. Hereinafter, with reference to FIG. 11, an example of a method for measuring the film thickness of the photoconductor film of the photoconductor 12 (hereinafter, “photoreceptor film thickness”) will be described. FIG. 11 is a diagram showing a measurement system for the film thickness of the photoconductor, and FIG. 11 shows the photoconductor 12, the charging unit 14, the power supply unit 40 connected to the charging unit 14, and the blade as the cleaning unit 22. There is.

感光体12を帯電部14で帯電する際には電流(帯電電流)が流れる。すなわち、帯電部14には図11に示す電源部40が備える高圧電源が接続されており、該高圧電源が帯電部14に印加されると感光体12を経由して帯電電流Iが流れる。帯電電流Iの直流成分は感光体12の膜厚dに依存するので、電流検知モニタで帯電電流Iを測定することにより感光体12の膜厚dが推定される。すなわち、感光体12の回転周方向をx軸にとった場合の帯電電流Iは、以下に示す(式1)で求められる。
I=εLΔV(dx/dt)/d ・・・ (式1)
ただし、dは感光体12の膜厚、ΔVは帯電前後の感光体12の表面の電位の差、εは感光体膜の誘電率、Lは感光体12の回転軸方向の長さ、dx/dtは感光体12の回転方向のプロセス速度を各々示している。この原理を用いて感光体12の回転軸方向の帯電電流Iのプロファイル(分布)を取得すれば感光体12の回転軸方向の膜厚分布が得られるので、偏磨耗に起因して発生するすじの位置が検知される。
When the photoconductor 12 is charged by the charging unit 14, a current (charging current) flows. That is, a high-voltage power supply included in the power supply unit 40 shown in FIG. 11 is connected to the charging unit 14, and when the high-voltage power supply is applied to the charging unit 14, a charging current I flows through the photoconductor 12. Since the DC component of the charging current I depends on the film thickness d of the photoconductor 12, the film thickness d of the photoconductor 12 is estimated by measuring the charging current I with the current detection monitor. That is, the charging current I when the rotation circumferential direction of the photoconductor 12 is taken on the x-axis is obtained by the following formula (Equation 1).
I = εLΔV (dx / dt) / d ... (Equation 1)
However, d is the film thickness of the photoconductor 12, ΔV is the difference in potential on the surface of the photoconductor 12 before and after charging, ε is the permittivity of the photoconductor film, L is the length of the photoconductor 12 in the rotation axis direction, dx /. dt indicates the process speed in the rotation direction of the photoconductor 12, respectively. If the profile (distribution) of the charging current I in the rotation axis direction of the photoconductor 12 is acquired using this principle, the film thickness distribution in the rotation axis direction of the photoconductor 12 can be obtained. The position of is detected.

図11の符号P2、P3はすじの発生位置を模式的に示している。位置P1では清掃部22に凸部が存在することにより感光体12に偏磨耗が発生し、トナーTNが感光体12に付着しにくくなって白すじが発生している。一方、位置P3では清掃部22に凹部が存在することにより周囲より膜厚が厚くなり、トナーTNが周囲より付着しやすくなって黒すじが発生している。なお、位置P1に示すように、感光体12上に生じた汚れ、異物等によってもトナーTNが周囲より多く付着して部分的なすじが発生する場合があるが、本実施の形態で想定するすじは位置P2あるいはP3におけるすじである。 Reference numerals P2 and P3 in FIG. 11 schematically indicate the streak generation positions. At the position P1, uneven wear occurs on the photoconductor 12 due to the presence of the convex portion on the cleaning portion 22, and the toner TN is less likely to adhere to the photoconductor 12, and white streaks are generated. On the other hand, at the position P3, the presence of the recess in the cleaning portion 22 makes the film thickness thicker than the surroundings, and the toner TN is more likely to adhere to the surroundings, causing black streaks. As shown in position P1, the toner TN may adhere to more than the surroundings due to dirt, foreign matter, etc. generated on the photoconductor 12, and partial streaks may be generated. The streaks are streaks at position P2 or P3.

実際の感光体膜厚の計測では、帯電部14による帯電、露光部16による露光、再度の帯電のプロセスを実行し、再度の帯電時に流れる帯電電流を測定し、予め求めておいた帯電電流と感光体膜厚との対応関係を用いて測定した帯電電流を感光体膜厚に変換する。この際、上述した画像形成プロセスのうち、現像、転写、除電は基本的に行わないが、現像は行っても差し支えない。なお、以下の説明では、帯電部14による最初の帯電を「初期帯電」、再度の帯電を「再帯電」、再帯電時に流れる電流を「再帯電電流」という。 In the actual measurement of the film thickness of the photoconductor, the processes of charging by the charging unit 14, exposure by the exposure unit 16, and recharging are executed, and the charging current flowing at the time of recharging is measured to obtain the charging current obtained in advance. The charging current measured using the correspondence with the photoconductor film thickness is converted into the photoconductor film thickness. At this time, among the above-mentioned image forming processes, development, transfer, and static elimination are basically not performed, but development may be performed. In the following description, the initial charge by the charging unit 14 is referred to as "initial charge", the recharge is referred to as "recharge", and the current flowing during recharge is referred to as "recharge current".

感光体12の表面に偏磨耗が発生しているか否かを判断するためには感光体12の回転軸方向の感光体膜厚のプロファイルを取得する必要があり、感光体膜厚のプロファイルを取得するためには、回転軸方向の再帯電電流プロファイルを取得する必要がある。図12を参照して、比較例に係る再帯電電流プロファイルの計測方法について説明する。図12(a)は、比較例に係る再帯電電流プロファイルの計測において形成される露光領域Aeの、感光体12の展開図P上の位置を示した図であり、図12(b)は図12(a)に示す露光領域Aeを再帯電した場合に流れる再帯電電流の感光体12の回転軸方向位置に対する変化、すなわち再帯電電流プロファイルを示すグラフである。 In order to determine whether or not uneven wear has occurred on the surface of the photoconductor 12, it is necessary to acquire a profile of the photoconductor film thickness in the rotation axis direction of the photoconductor 12, and the profile of the photoconductor film thickness is acquired. In order to do so, it is necessary to acquire a recharge current profile in the direction of the rotation axis. A method of measuring the recharge current profile according to the comparative example will be described with reference to FIG. FIG. 12 (a) is a diagram showing the position of the exposure region Ae formed in the measurement of the recharge current profile according to the comparative example on the developed view P of the photoconductor 12, and FIG. 12 (b) is a diagram. 12 (a) is a graph showing a change in the recharge current flowing when the exposure region Ae shown in 12 (a) is recharged with respect to the position in the rotation axis direction of the photoconductor 12, that is, the recharge current profile.

図12(a)に示すように、比較例に係る再帯電電流プロファイルの計測方法では、感光体12の回転とともに露光部16によって矩形形状の露光領域Aeを感光体12の表面に対して位置をずらしながら形成する。図12(a)に示す符号「Ds」が付された白抜き矢印は感光体12の回転方向を、符号「Dm」が付された白抜き矢印は感光体12の回転軸方向を各々示している。図12(a)のように形成された露光領域Aeを再帯電させ、再帯電電流を測定すると図12(b)に示すような再帯電電流プロファイルが得られる。 As shown in FIG. 12A, in the method for measuring the recharge current profile according to the comparative example, the exposure portion 16 positions the rectangular exposure region Ae with respect to the surface of the photoconductor 12 as the photoconductor 12 rotates. Form while shifting. The white arrows with the symbol "Ds" shown in FIG. 12A indicate the rotation direction of the photoconductor 12, and the white arrows with the symbol "Dm" indicate the rotation axis direction of the photoconductor 12. There is. When the exposed region Ae formed as shown in FIG. 12 (a) is recharged and the recharge current is measured, the recharge current profile as shown in FIG. 12 (b) is obtained.

しかしながら、露光領域Aeのように分割露光した場合、再帯電電流はその分割領域ごとの平均値となり、詳細な再帯電電流プロファイルが得られない。例えば図12(b)の例では8個分の再帯電電流しか得られない。一方、詳細な再帯電電流プロファイルを得るために分割数を多くすると、つまり露光領域Aeの幅を細くすると計測時間が長くなる。
つまり、比較例に係る再帯電電流プロファイルの計測方法では、詳細な再帯電電流プロファイルの取得と計測時間とは両立しない。
However, when divided exposure is performed as in the exposed region Ae, the recharge current becomes an average value for each divided region, and a detailed recharge current profile cannot be obtained. For example, in the example of FIG. 12B, only eight recharge currents can be obtained. On the other hand, if the number of divisions is increased in order to obtain a detailed recharge current profile, that is, if the width of the exposure region Ae is narrowed, the measurement time becomes long.
That is, in the method for measuring the recharge current profile according to the comparative example, the acquisition of the detailed recharge current profile and the measurement time are incompatible.

さらに、計測時間を短縮するために露光領域Aeの間隔を近づけると、図12(b)に黒矢印で示すように露光領域Ae同士が隣接する位置(図12(a)に黒矢印で示す位置)でスパイク状の電流変動が発生する。これは、露光領域Aeの潜像部分は周縁部において瞬時に消滅するのではなく、一定の幅のすそをもって消滅するため、隣接する露光領域Aeの潜像のすそ同士が重なり、その結果再帯電電流が増加することによる。このような電流変動が発生すると、再帯電電流プロファイルが正確に計測できなくなる。 Further, when the intervals between the exposure regions Ae are brought closer in order to shorten the measurement time, the positions where the exposure regions Ae are adjacent to each other as shown by the black arrows in FIG. 12 (b) (the positions indicated by the black arrows in FIG. 12 (a)). ) Causes spike-like current fluctuations. This is because the latent image portion of the exposed region Ae does not disappear instantly at the peripheral edge portion, but disappears with a skirt having a certain width. Due to the increase in current. When such a current fluctuation occurs, the recharge current profile cannot be measured accurately.

そこで本発明では、予め定められた幅で感光体12の回転に伴って斜めに移動する露光領域を形成し、この露光領域の再帯電電流を測定するようにした。このことにより、連続的な再帯電電流プロファイルが短時間で計測され、しかも取得された再帯電電流プロファイルでは図12(b)に示すようなスパイク状の電流変動も抑制される。 Therefore, in the present invention, an exposure region that moves diagonally with the rotation of the photoconductor 12 is formed with a predetermined width, and the recharge current in this exposure region is measured. As a result, the continuous recharge current profile is measured in a short time, and the acquired recharge current profile also suppresses spike-like current fluctuations as shown in FIG. 12 (b).

図2を参照して、本実施の形態に係る再帯電電流プロファイルの計測方法についてより詳細に説明する。図2(a)は、本実施の形態に係る露光部16による露光工程によって感光体12の表面に形成された露光領域Aeを、感光体12の展開図P上に示した図である。ただし展開図Pは感光体12の1回の回転分の展開図に限られず、複数回の回転分の展開図を表す場合もある。図2(a)に示す露光領域Aeは、例えばレーザ方式の露光部の場合は走査装置により予め定められた幅の照射領域を感光体の回転軸方向に移動させて形成する。また、LED(Light Emitting Diode)を用いたLEDプリントヘッドの場合はLEDを順次点灯制御して予め定められた幅の照射領域を感光体の回転軸方向に移動させて形成する。この際、照射領域の移動を等速で行うと、図2(a)に示すような直線状(帯状)の露光領域Aeが形成されるので再帯電電流プロファイルの計測の観点からは望ましいが、これに限られず、変動する速度で移動させてもよい。 The method for measuring the recharge current profile according to the present embodiment will be described in more detail with reference to FIG. FIG. 2A is a diagram showing an exposure region Ae formed on the surface of the photoconductor 12 by the exposure step by the exposure unit 16 according to the present embodiment on the developed view P of the photoconductor 12. However, the developed view P is not limited to the developed view for one rotation of the photoconductor 12, and may show the developed view for a plurality of rotations. The exposure region Ae shown in FIG. 2A is formed by, for example, in the case of a laser-type exposure portion, an irradiation region having a predetermined width is moved in the rotation axis direction of the photoconductor by a scanning device. Further, in the case of an LED printhead using an LED (Light Emitting Diode), the LEDs are sequentially turned on and controlled to move an irradiation region having a predetermined width in the direction of the rotation axis of the photoconductor. At this time, if the irradiation region is moved at a constant velocity, a linear (band-shaped) exposure region Ae as shown in FIG. 2A is formed, which is desirable from the viewpoint of measuring the recharge current profile. Not limited to this, it may be moved at a fluctuating speed.

図2に示す符号「Ad」は、電源部40に含まれる電流検知モニタ(図11参照)によって帯状の露光領域Aeの再帯電電流を測定する場合の検知領域を概念的に表している。
検知領域Adは露光領域Aeに沿って符号「D1」で示す走査方向に移動するとみなせる。図2(b)は、図2(a)に示すように露光領域Aeを形成した場合の、回転軸方向位置に対する再帯電電流と膜厚の変化を示している。また、図2(b)に示す符号[1]、[2]、[3]は、図2(a)に示す符号[1]、[2]、[3]で示す検知領域Adの位置に対応するグラフ上の位置を示している。
The reference numeral “Ad” shown in FIG. 2 conceptually represents a detection region when the recharge current of the strip-shaped exposure region Ae is measured by the current detection monitor (see FIG. 11) included in the power supply unit 40.
The detection region Ad can be regarded as moving along the exposure region Ae in the scanning direction indicated by the reference numeral “D1”. FIG. 2B shows changes in the recharge current and the film thickness with respect to the position in the rotation axis direction when the exposure region Ae is formed as shown in FIG. 2A. Further, the codes [1], [2], and [3] shown in FIG. 2 (b) are located at the positions of the detection areas Ad shown by the codes [1], [2], and [3] shown in FIG. 2 (a). It shows the position on the corresponding graph.

位置[1]は再帯電電流の測定を開始する位置を示している。本実施の形態では、再帯電電流の測定は、露光開始位置(露光領域Aeの左端の位置)から開始する。検知領域Adの位置が走査方向D1に沿って移動し、位置[2]において偏磨耗領域Awと重なり始めると再帯電電流が増加し始める。再帯電電流は位置[3]において検知領域Adが偏磨耗領域Awから外れるまで一定の値を示し、外れた後は元の値まで減少し始める。この際、再帯電電流の増加した後の一定値の幅は、検知領域Adの走査方向D1の幅fに略等しい。図2(b)に示すように、感光体膜厚が薄くなった偏磨耗領域Awは再帯電電流の幅fの中に含まれるので、再帯電電流プロファイルから偏磨耗領域Awの位置が推定(検知)される。従って、偏磨耗領域Awの検知における分解能の観点からは、検知領域Adの回転軸方向Dmの幅、すなわち露光領域Aeの回転軸方向Dmの幅は偏磨耗領域Awの回転軸方向Dmの幅より広くかつ極力偏磨耗領域Awの回転軸方向Dmの幅に近いことが好ましい。 The position [1] indicates the position where the measurement of the recharge current is started. In the present embodiment, the measurement of the recharge current starts from the exposure start position (the position at the left end of the exposure region Ae). When the position of the detection region Ad moves along the scanning direction D1 and begins to overlap the uneven wear region Aw at the position [2], the recharge current starts to increase. The recharge current shows a constant value at the position [3] until the detection region Ad deviates from the uneven wear region Aw, and after that, it starts to decrease to the original value. At this time, the width of the constant value after the increase of the recharge current is substantially equal to the width f of the scanning direction D1 of the detection region Ad. As shown in FIG. 2B, since the uneven wear region Aw in which the film thickness of the photoconductor is thin is included in the width f of the recharge current, the position of the uneven wear region Aw is estimated from the recharge current profile ( Detected). Therefore, from the viewpoint of resolution in detecting the uneven wear region Aw, the width of the detection region Ad in the rotation axis direction Dm, that is, the width of the exposure region Ae in the rotation axis direction Dm is larger than the width of the uneven wear region Aw in the rotation axis direction Dm. It is preferable that it is wide and as close as possible to the width of the uneven wear region Aw in the rotation axis direction Dm.

次に図3を参照して、再帯電電流プロファイルの実際の計測例について説明する。図3(a)は露光領域Aeを感光体12が複数回回転した場合の展開図P上に表した図であり、本実施の形態に係る再帯電電流の測定は検知領域Adを走査方向D1に移動させて行う。図3(b)は、図3(a)に示す計測方法を行って取得した再帯電電流プロファイルの一例を示している。 Next, an actual measurement example of the recharge current profile will be described with reference to FIG. FIG. 3A is a diagram showing the exposed region Ae on the developed view P when the photoconductor 12 is rotated a plurality of times. In the measurement of the recharge current according to the present embodiment, the detection region Ad is scanned in the scanning direction D1. Move to. FIG. 3B shows an example of the recharge current profile obtained by performing the measurement method shown in FIG. 3A.

図3(b)の特に点線枠内のプロファイルから明らかなように、本実施の形態に係る再帯電電流プロファイルでは図12(b)に示すようなスパイク状の電流変動が発生していない。従って、感光体膜厚分布に対応した連続的な再帯電電流プロファイルが計測される。また、図12に示す比較例に係る再帯電電流プロファイルの計測方法では、偏磨耗領域Awが隣接する露光領域Aeの境界付近にまたがって存在した場合、偏磨耗領域Awに対応する信号成分が隣接する露光領域Aeに分離して偏磨耗領域Awの位置の特定が困難になる場合がある。隣接する2つの露光領域Aeの両方で平均値として再帯電電流が測定されるからである。しかしながら、本実施の形態に係る再帯電電流プロファイルの計測方法では露光領域Aeが連続しているので原理的にそのような問題が発生せず、いずれの位置に偏磨耗領域Awが発生しても同じ条件で該偏磨耗領域Awの位置が特定される。 As is clear from the profile in the dotted line frame of FIG. 3 (b), the spike-shaped current fluctuation as shown in FIG. 12 (b) does not occur in the recharge current profile according to the present embodiment. Therefore, a continuous recharge current profile corresponding to the photoconductor film thickness distribution is measured. Further, in the method of measuring the recharge current profile according to the comparative example shown in FIG. 12, when the uneven wear region Aw exists over the vicinity of the boundary of the adjacent exposure region Ae, the signal components corresponding to the uneven wear region Aw are adjacent to each other. It may be difficult to specify the position of the uneven wear region Aw by separating it into the exposure region Ae. This is because the recharge current is measured as an average value in both of the two adjacent exposure regions Ae. However, in the method for measuring the recharge current profile according to the present embodiment, since the exposure region Ae is continuous, such a problem does not occur in principle, and even if the uneven wear region Aw occurs at any position. The position of the uneven wear region Aw is specified under the same conditions.

[第2の実施の形態]
図4から図6を参照して、本実施の形態に係る画像形成装置について説明する。本実施の形態に係る画像形成装置は、上記実施の形態に係る画像形成装置において、帯電部14による帯電履歴の影響を抑制するようにした形態である。従って、画像形成装置自体は上記実施の形態に係る画像形成装置10と同様なので、必要に応じ上記で説明した図を参照することとして詳細な説明を省略する。
[Second Embodiment]
The image forming apparatus according to the present embodiment will be described with reference to FIGS. 4 to 6. The image forming apparatus according to the present embodiment is a form in which the influence of the charging history by the charging unit 14 is suppressed in the image forming apparatus according to the above embodiment. Therefore, since the image forming apparatus itself is the same as the image forming apparatus 10 according to the above embodiment, detailed description thereof will be omitted by referring to the drawings described above as necessary.

まず、図5を参照して、再帯電電流プロファイルの計測における帯電履歴の影響について説明する。図5(a)は感光体12の3回転分の表面の状態を展開図上に示した図である。図5(a)に示す符号「R1」、「R2」、「R3」は感光体12の回転数を示す付号であり、各々1番目、2番目、3番目の回転を示している。以下、各々「第1回転R1」のように呼称する。図5(a)に示す付号「S」は感光体12の周囲長を示している。 First, with reference to FIG. 5, the influence of the charging history on the measurement of the recharging current profile will be described. FIG. 5A is a developed view showing the state of the surface of the photoconductor 12 for three rotations. Reference numerals "R1", "R2", and "R3" shown in FIG. 5A are additional numerals indicating the number of rotations of the photoconductor 12, and indicate the first, second, and third rotations, respectively. Hereinafter, they will be referred to as "first rotation R1". Reference numeral "S" shown in FIG. 5A indicates the peripheral length of the photoconductor 12.

帯電履歴とは、一度帯電させた後露光しさらに帯電させた場合に、帯電電位が予め定められた露光や除電を実施しない場合の帯電電位VHよりも低い帯電電位になる現象をいう。図5(a)では、上記実施の形態に係る方法により露光領域Aeを形成した場合に発生する帯電履歴Ag1、Ag2を示している。帯電履歴Ag1、Ag2の色の濃さは、濃い方がより帯電電位の低下が大きいことを表している。帯電履歴Ag1は露光領域Aeに対し2周目の回転で発生する帯電履歴を、帯電履歴Ag2は露光領域Aeに対し3周目の回転で発生する帯電履歴を、各々示している。この場合、第2回転R2の再帯電電流の測定においては、本来測定したい露光領域Aeの再帯電電流に加え、帯電履歴Ag1による再帯電電流が重畳される。帯電履歴Ag1の電位も露光領域Aeを除く周囲の電位より低くなっているためである。 The charging history refers to a phenomenon in which the charging potential becomes lower than the charging potential VH when a predetermined exposure or static elimination is not performed when the battery is charged once, then exposed and further charged. FIG. 5A shows the charging histories Ag1 and Ag2 generated when the exposed region Ae is formed by the method according to the above embodiment. The color depths of the charging histories Ag1 and Ag2 indicate that the darker the color, the greater the decrease in the charging potential. The charge history Ag1 shows the charge history generated in the rotation of the second lap with respect to the exposure region Ae, and the charge history Ag2 shows the charge history generated in the rotation of the third lap with respect to the exposure region Ae. In this case, in the measurement of the recharge current of the second rotation R2, the recharge current according to the charge history Ag1 is superimposed in addition to the recharge current of the exposure region Ae that is originally desired to be measured. This is because the potential of the charge history Ag1 is also lower than the potential of the surroundings excluding the exposure region Ae.

同様に、第3回転R3では、露光領域Aeの再帯電電流に加え、帯電履歴Ag1および帯電履歴Ag2に流れる再帯電電流も測定することになる。このように、本来測定したい露光領域Aeの再帯電電流に帯電履歴Ag1、Ag2に起因する再帯電電流が重畳すると、正確な再帯電電流が得られなくなり、その結果正確な感光体膜厚の計測が妨げられる場合がある。従って、帯電履歴の影響は極力排除することが好ましい。ただし、後述するように、感光体12の回転に伴って発生する各帯電履歴のうち、第2回転R2の帯電履歴Ag1が支配的であり、第3回転R3の帯電履歴Ag2以降は実質的に無視することが可能である。 Similarly, in the third rotation R3, in addition to the recharge current in the exposure region Ae, the recharge current flowing in the charge history Ag1 and the charge history Ag2 is also measured. In this way, if the recharge current due to the charge history Ag1 and Ag2 is superimposed on the recharge current of the exposure region Ae that is originally desired to be measured, an accurate recharge current cannot be obtained, and as a result, accurate measurement of the photoconductor film thickness is performed. May be hindered. Therefore, it is preferable to eliminate the influence of the charging history as much as possible. However, as will be described later, among the charging histories generated with the rotation of the photoconductor 12, the charging history Ag1 of the second rotation R2 is dominant, and the charging history Ag2 and thereafter of the third rotation R3 are substantially. It can be ignored.

図5(b)は、感光体膜厚が均一な感光体12を4回転させた場合の再帯電電流プロファイルを示している。図5(b)に示すように、第1回転R1では帯電履歴の影響がないが、第2回転R2以降には帯電履歴による再帯電電流が加算されるので、第1回転R1と第2回転R2以降との間に再帯電電流が大きく変動する電流ギャップΔIが発生する。この点、第2回転R2以降ではこのような電流ギャップΔIはほとんど発生していない。電流ギャップΔIの発生は正確な感光体膜厚dの計測において誤差要因となるので、極力排除するのが好ましい。 FIG. 5B shows a recharge current profile when the photoconductor 12 having a uniform photoconductor film thickness is rotated four times. As shown in FIG. 5B, the first rotation R1 is not affected by the charging history, but since the recharging current due to the charging history is added after the second rotation R2, the first rotation R1 and the second rotation A current gap ΔI in which the recharge current fluctuates greatly is generated between R2 and later. In this respect, such a current gap ΔI hardly occurs after the second rotation R2. Since the occurrence of the current gap ΔI causes an error in the accurate measurement of the photoconductor film thickness d, it is preferable to eliminate it as much as possible.

図4を参照して、帯電履歴の影響を抑制した本実施の形態に係る画像形成装置について説明する。本実施の形態では、本来の目的とする露光領域Aeを形成する前にプレ露光領域を形成して帯電履歴の影響を抑制している。 An image forming apparatus according to the present embodiment in which the influence of the charging history is suppressed will be described with reference to FIG. In the present embodiment, the pre-exposure region is formed before the originally intended exposure region Ae is formed to suppress the influence of the charging history.

図4(a)は、本実施の形態に係る露光領域Aeの形成方法を、感光体12の4回転分の展開図上に示した図である。本実施の形態では第2回転R2から再帯電電流の測定を開始するが、その1回転前の第1回転R1でプレ露光を行いプレ露光領域Aepを形成する。プレ露光領域Aepの形状は露光領域Aeの1回転分の形状と同様の形状とする。プレ露光領域Aepを形成する感光体12上の領域は、プレ露光領域Aepおよびプレ露光領域Aepによる帯電履歴Agp1、Agp2が、再帯電電流の測定領域である露光領域Aeおよび露光領域Aeによる帯電履歴Ag1、Ag2と重ならない領域に行う。なお、帯電履歴Ag1、Ag2が問題とならない場合は、プレ露光領域Aepを帯電履歴Ag1、Ag2と重なる領域に行ってもよい。また、本実施の形態では露光領域Aeを形成する1回転前にプレ露光を行う形態を例示して説明するが、これに限定されず、2回転以上前から連続してプレ露光を行う形態としてもよい。このプレ露光領域Aepが本発明に係る「補正露光領域」に相当する。 FIG. 4A is a diagram showing a method of forming the exposure region Ae according to the present embodiment on a developed view of the photoconductor 12 for four rotations. In the present embodiment, the measurement of the recharge current is started from the second rotation R2, and the pre-exposure is performed in the first rotation R1 one rotation before the measurement to form the pre-exposure region Aep. The shape of the pre-exposure area Aep is the same as the shape of one rotation of the exposure area Ae. The region on the photoconductor 12 forming the pre-exposure region Aep is the charging history of the pre-exposure region Aep and the pre-exposure region Aep. Perform in a region that does not overlap with Ag1 and Ag2. If the charging history Ag1 and Ag2 are not a problem, the pre-exposure region Aep may be set to a region overlapping the charging history Ag1 and Ag2. Further, in the present embodiment, a mode in which pre-exposure is performed one rotation before forming the exposure region Ae will be described as an example, but the present invention is not limited to this, and as a mode in which pre-exposure is continuously performed from two or more rotations before. May be good. This pre-exposure area Aep corresponds to the "correction exposure area" according to the present invention.

このようにプレ露光を行うことによって、第2回転R2では、露光領域Aeおよび帯電履歴Agp1による再帯電電流を測定する。第3回転R3、第4回転R4では、2回転目の帯電履歴Agp2は無視できるので、露光領域Aeおよび露光領域Aeによる帯電履歴Ag1による再帯電電流を測定する。つまり、第2回転R2以降からの本実施の形態に係る再帯電電プロファイルの計測では、露光領域Aeによる再帯電電流に加えて帯電履歴Ag1による再帯電電流を重畳した状態で測定する。そのため、露光領域Aeの再帯電電流の測定においては常に同じ形状の帯電履歴による再帯電電流を加えた状態で測定するので、帯電履歴による再帯電電流の誤差が軽減され、電流ギャップΔIの発生が抑制される。
その結果、本実施の形態に係る画像係層装置によれば、帯電履歴による影響が抑制され、上記実施の形態に比べてより正確な感光体膜厚dの計測が可能となる。
By performing the pre-exposure in this way, in the second rotation R2, the recharge current in the exposure region Ae and the charge history Agp1 is measured. In the third rotation R3 and the fourth rotation R4, the charging history Agp2 in the second rotation can be ignored, so the recharging current due to the charging history Ag1 in the exposure region Ae and the exposure region Ae is measured. That is, in the measurement of the recharged electric profile according to the present embodiment from the second rotation R2 onward, the measurement is performed in a state where the recharged current by the charging history Ag1 is superimposed in addition to the recharged current by the exposure region Ae. Therefore, in the measurement of the recharge current in the exposure region Ae, the recharge current of the same shape is always applied, so that the error of the recharge current due to the charge history is reduced and the current gap ΔI is generated. It is suppressed.
As a result, according to the image layering apparatus according to the present embodiment, the influence of the charging history is suppressed, and the photoconductor film thickness d can be measured more accurately than in the above-described embodiment.

図4(b)は上記の計測方法を適用して実測した再帯電電流プロファイルを示している。図4(b)に示すように、本実施の形態に係る再帯電電流プロファイルの計測方法によれば、図5(b)に示すような電流ギャップΔIの発生が抑制されていることがわかる。 FIG. 4B shows a recharge current profile measured by applying the above measurement method. As shown in FIG. 4 (b), according to the method for measuring the recharge current profile according to the present embodiment, it can be seen that the occurrence of the current gap ΔI as shown in FIG. 5 (b) is suppressed.

次に図6を参照して、本実施の形態に係る再帯電電流プロファイルによる感光体膜厚の計測結果と実際の感光体膜厚との比較結果(図6(a))、および比較例に係る再帯電電流プロファイルによる感光体膜厚の計測結果との比較結果(図6(b))について説明する。 Next, with reference to FIG. 6, the measurement result of the photoconductor film thickness by the recharge current profile according to the present embodiment and the comparison result between the actual photoconductor film thickness (FIG. 6A) and the comparative example are shown. A comparison result (FIG. 6 (b)) with the measurement result of the photoconductor film thickness by the recharge current profile will be described.

図6(a)に示す曲線C1は本実施の形態に係る再帯電電流プロファイルによる感光体膜厚の計測結果を、曲線C2は実際の感光体膜厚を各々示している。図6(a)に示す例では感光体12の回転軸方向上の位置P4、P5において偏磨耗が発生しているが、本実施の形態に係る感光体膜厚の計測結果によれば、この位置P4、P5における偏磨耗が検知されていることがわかる。 The curve C1 shown in FIG. 6A shows the measurement result of the photoconductor film thickness by the recharge current profile according to the present embodiment, and the curve C2 shows the actual photoconductor film thickness. In the example shown in FIG. 6A, uneven wear occurs at the positions P4 and P5 of the photoconductor 12 in the rotation axis direction, but according to the measurement result of the photoconductor film thickness according to the present embodiment, this is caused. It can be seen that uneven wear at positions P4 and P5 has been detected.

図6(b)に示す曲線C3は図12に示す比較例に係る再帯電電流プロファイルの計測方法による感光体膜厚の計測結果を示している。また、曲線C4は比較例に係る再帯電電流プロファイルの計測方法の変形例として、図12(a)に示す露光領域Aeの各々を感光体12の周囲全体に短冊状に形成して取得した再帯電電流プロファイルによる感光体膜厚の計測結果を、各々示している。曲線C3で示すように、比較例に係る感光体膜厚の計測結果では、位置P6に帯電履歴に起因する電流ギャップΔIによる感光体膜厚の段差が表れている。また位置P7、P8、P9には、図12(b)に黒矢印で示した隣接する露光領域Aeの境界におけるスパイク状の電流変動による感光体膜厚の低下が表れている。
これらの感光体膜厚の変動により曲線C2に示す実際の感光体膜厚の取得が困難になっていることがわかる。また、曲線C4とC2とを比較して明らかなように、比較例の変形例に係る再帯電電流プロファイルによる感光体膜厚の計測では、位置P4、P5における偏磨耗を検知できていない。
The curve C3 shown in FIG. 6B shows the measurement result of the photoconductor film thickness by the method for measuring the recharge current profile according to the comparative example shown in FIG. Further, the curve C4 is obtained by forming each of the exposure regions Ae shown in FIG. 12A in a strip shape around the entire periphery of the photoconductor 12 as a modification of the method for measuring the recharge current profile according to the comparative example. The measurement results of the photoconductor film thickness by the charging current profile are shown respectively. As shown by the curve C3, in the measurement result of the photoconductor film thickness according to the comparative example, a step in the photoconductor film thickness due to the current gap ΔI due to the charging history appears at the position P6. Further, at positions P7, P8, and P9, a decrease in the photoconductor film thickness due to spike-like current fluctuations at the boundary of the adjacent exposure regions Ae indicated by the black arrows in FIG. 12B appears.
It can be seen that it is difficult to obtain the actual photoconductor film thickness shown in the curve C2 due to these fluctuations in the photoconductor film thickness. Further, as is clear by comparing the curves C4 and C2, the uneven wear at the positions P4 and P5 cannot be detected in the measurement of the photoconductor film thickness by the recharge current profile according to the modified example of the comparative example.

[第3の実施の形態]
図7を参照して、本実施の形態に係る画像形成装置について説明する。本実施の形態も上記実施の形態と同様に帯電履歴による影響を抑制することを目的とした形態であるが、上記実施の形態では同じ大きさの帯電履歴による再帯電電流が常に重畳されるようにして帯電履歴の影響を抑制したが、本実施の形態は帯電履歴を飽和させ(ほぼ消滅させ)、帯電履歴の影響を抑制する形態である。帯電履歴の飽和とは、一旦形成された帯電履歴の領域を再度帯電させることにより、帯電電位がほぼ予め定められた帯電電位VHまで上昇することをいう。
[Third Embodiment]
The image forming apparatus according to the present embodiment will be described with reference to FIG. 7. Similar to the above embodiment, the present embodiment is also an embodiment aimed at suppressing the influence of the charging history, but in the above embodiment, the recharging current due to the charging history of the same magnitude is always superimposed. However, the present embodiment is a form in which the charging history is saturated (almost eliminated) and the influence of the charging history is suppressed. Saturation of the charging history means that the charging potential rises to almost a predetermined charging potential VH by recharging the once formed charging history region.

まず、図7(b)を参照して、帯電履歴の飽和についてより詳細に説明する。図7(b)は、帯電部14以外で感光体が電気的に接触する転写部20および除電部24の動作を停止させた、帯電部14を動作させた場合の感光体12の周回に伴う帯電電位の変化を示している。つまり、図7(b)では第1回転R1で1回目の帯電が行われた領域に、第2回転R2で2回目の帯電を行い、続けて第3回転R3で3回目、第4回転R4で4回目の帯電を行う。 First, the saturation of the charging history will be described in more detail with reference to FIG. 7 (b). FIG. 7B shows the circulation of the photoconductor 12 when the charging unit 14 is operated, in which the operations of the transfer unit 20 and the static elimination unit 24, which the photoconductor is in electrical contact with other than the charging unit 14, are stopped. It shows the change in charging potential. That is, in FIG. 7B, the region where the first charge was performed in the first rotation R1 is charged for the second time in the second rotation R2, and then in the third rotation R3 for the third time and in the fourth rotation R4. The fourth charge is performed with.

図7(b)に示すように、帯電部14を通過する回数が増えるたびに帯電履歴の電位は、露光電位VLから予め定められた帯電電位VHに漸近していく、すなわち飽和に近づく。しかしながら、第1回転R1における帯電電位と第2回転R2における帯電電位との電位差ΔVが、他の回転における電位差と比較して格段に大きい。電位差ΔVによる帯電電流自体も最初の帯電電位VH1に対応する帯電電流の1/10程度の値である。換言すれば、第2回転R2の帯電電位と第3回転R3の帯電電位の電位差以降の電位差は、無視可能なレベル程度に小さい。つまり、第2回転以降では帯電電流がほとんど流れない。本実施の形態ではこの現象を応用している。 As shown in FIG. 7B, the potential of the charging history gradually approaches the predetermined charging potential VH from the exposure potential VL, that is, approaches saturation as the number of times of passing through the charging unit 14 increases. However, the potential difference ΔV between the charging potential in the first rotation R1 and the charging potential in the second rotation R2 is much larger than the potential difference in the other rotations. The charging current itself due to the potential difference ΔV is also a value of about 1/10 of the charging current corresponding to the initial charging potential VH1. In other words, the potential difference after the potential difference between the charging potential of the second rotation R2 and the charging potential of the third rotation R3 is as small as a negligible level. That is, almost no charging current flows after the second rotation. In this embodiment, this phenomenon is applied.

本実施の形態では、感光体12の回転周期における再帯電電流の測定サイクルの間に、露光部16による露光を行わず(画像を描画せず)帯電履歴が飽和するまで帯電させるリフレッシュサイクルを設け、帯電履歴の影響を抑制している。より具体的には、本実施の形態では、感光体12の回転周期において、測定サイクルの回転周期とリフレッシュサイクルの回転周期とを交互に設定する。測定サイクルでは形成された露光領域Aeの再帯電電流を測定し、リフレッシュサイクルでは露光部16による照射領域の移動を停止させて露光領域Aeを形成せず、直前の回転周期における露光領域Aeの帯電履歴を飽和させる。 In the present embodiment, during the measurement cycle of the recharge current in the rotation cycle of the photoconductor 12, a refresh cycle is provided in which the exposure unit 16 does not perform exposure (does not draw an image) and charges the photoconductor 12 until the charge history is saturated. , The influence of charging history is suppressed. More specifically, in the present embodiment, the rotation cycle of the measurement cycle and the rotation cycle of the refresh cycle are alternately set in the rotation cycle of the photoconductor 12. In the measurement cycle, the recharge current of the formed exposure region Ae is measured, and in the refresh cycle, the movement of the irradiation region by the exposure unit 16 is stopped to form the exposure region Ae, and the exposure region Ae is charged in the immediately preceding rotation cycle. Saturate history.

図7(a)に示す例では、第1回転R1で露光領域Ae1の再帯電電流の測定を行う。
第2回転R2では露光領域Aeを形成せず、露光領域Ae1に対応する帯電履歴Ag1の帯電のみを行って帯電履歴Ag1を飽和させる。続く第3回転R3で露光領域Ae2の再帯電電流の測定を行う。このとき露光領域Ae1に対応する帯電履歴Ag2は2回帯電されているのでほぼ飽和しており、再帯電電流がほとんど流れない。
In the example shown in FIG. 7A, the recharge current in the exposure region Ae1 is measured in the first rotation R1.
In the second rotation R2, the exposure region Ae is not formed, and only the charging history Ag1 corresponding to the exposure region Ae1 is charged to saturate the charging history Ag1. In the subsequent third rotation R3, the recharge current in the exposure region Ae2 is measured. At this time, since the charging history Ag2 corresponding to the exposure region Ae1 is charged twice, it is almost saturated and almost no recharging current flows.

同様に第4回転R4では露光領域Ae2に対応する帯電履歴Ag3を飽和させる帯電のみを行い、第5回転R5で露光領域Ae3の再帯電電流の測定を行う。その際、露光領域Ae2に対応する帯電履歴Ag4は無視できるレベルまで飽和されている。つまり、図7(a)に示す例では、第1回転R1、第3回転R3、第5回転R5が測定サイクルとなっており、第2回転R2、第4回転R4がリフレッシュサイクルとなっている。 Similarly, in the fourth rotation R4, only charging is performed to saturate the charging history Ag3 corresponding to the exposure region Ae2, and in the fifth rotation R5, the recharge current of the exposure region Ae3 is measured. At that time, the charge history Ag4 corresponding to the exposure region Ae2 is saturated to a negligible level. That is, in the example shown in FIG. 7A, the first rotation R1, the third rotation R3, and the fifth rotation R5 are measurement cycles, and the second rotation R2 and the fourth rotation R4 are refresh cycles. ..

以上を要するに、本実施の形態では測定サイクルとリフレッシュサイクルとを交互に実行しながら、測定サイクルにおいて露光領域Aeを軸方向に移動させる。つまり本実施の形態では帯電履歴を飽和させ、再帯電電流がほとんど無視できるレベルとなっている露光後2周目の帯電履歴とともに露光領域Aeの再帯電電流の測定を行っている。従って、例えば、最初の帯電履歴が感光体12の最初の回転周期内で変動したとしてもその影響を受けることがない。本実施の形態は計測に要するサイクル数は多くなるが、例えばより高精度な計測が必要な場合に好適な再帯電電流プロファイルの計測方法である。 In short, in the present embodiment, the exposure region Ae is moved in the axial direction in the measurement cycle while alternately executing the measurement cycle and the refresh cycle. That is, in the present embodiment, the charging history is saturated, and the recharging current in the exposure region Ae is measured together with the charging history on the second lap after exposure at a level where the recharging current is almost negligible. Therefore, for example, even if the initial charging history fluctuates within the first rotation cycle of the photoconductor 12, it is not affected by the fluctuation. This embodiment requires a large number of cycles for measurement, but is a method for measuring a recharge current profile that is suitable, for example, when more accurate measurement is required.

[第4の実施の形態]
図8を参照して、本実施の形態に係る画像形成装置について説明する。本実施の形態は、上記各実施の形態において露光部16による照射領域の感光体12の回転軸方向の移動速度vs、または露光領域Aeの回転軸方向Dmの幅Wを可変とする形態である。照射領域の移動速度vsは露光領域Aeを斜行させて形成する場合の露光領域Aeの移動速度に等しいので、以下露光領域Aeの移動速度vsという。また、移動速度vsは感光体12の1周あたりの回転軸方向の移動距離(m/回転)で表現する。
[Fourth Embodiment]
The image forming apparatus according to the present embodiment will be described with reference to FIG. In each of the above embodiments, the moving speed of the photoconductor 12 in the irradiation region by the exposure unit 16 in the rotation axis direction vs. the width W of the exposure region Ae in the rotation axis direction Dm is variable. .. Since the moving speed vs. the moving speed of the irradiation region is equal to the moving speed of the exposure region Ae when the exposure region Ae is formed by skewing, it is hereinafter referred to as the moving speed vs. the exposure region Ae. Further, the moving speed vs. the moving speed is expressed by the moving distance (m / rotation) in the rotation axis direction per circumference of the photoconductor 12.

まず、感光体12の回転速度、露光領域Ae(照射領域)の幅Wを一定とした場合の、感光体12の周面における露光領域Aeのパターンと露光領域の移動速度vsとの関係について説明する。露光領域Aeのパターンは移動速度vsに依存し、移動速度vsを遅くすると露光領域Aeのパターンは回転方向Dsに対する傾斜角が小さく緻密に密集した形態となり、速くすると傾斜角が大きく隙間が空いた形態となる。従って、露光領域Aeの移動速度vs、または露光領域Aeの幅Wは、すじの位置の特定における分解能と計測時間のトレードオフで決める必要がある。 First, the relationship between the pattern of the exposure region Ae on the peripheral surface of the photoconductor 12 and the moving speed vs. the movement speed of the exposure region when the rotation speed of the photoconductor 12 and the width W of the exposure region Ae (irradiation region) are constant will be described. do. The pattern of the exposure area Ae depends on the movement speed vs. When the movement speed vs. is slowed down, the pattern of the exposure area Ae has a small inclination angle with respect to the rotation direction Ds and becomes a densely packed form. It becomes a form. Therefore, the moving speed vs. the width W of the exposure area Ae needs to be determined by the trade-off between the resolution and the measurement time in specifying the position of the streak.

図8および図9は、露光領域Ae(照射領域)の幅をWとし、露光領域Aeの移動速度をvsとし、感光体12の回転軸方向の長さをLとし、移動速度vsを変化させた場合の露光領域Aeのパターンの変化を示している。各図における<1>は露光領域Aeを感光体12の周面の展開図上に示した図であり、<2>は各回転における露光領域Aeを1つの展開図上に集約して示した図である。 In FIGS. 8 and 9, the width of the exposure region Ae (irradiation region) is W, the movement speed of the exposure region Ae is vs, the length of the photoconductor 12 in the rotation axis direction is L, and the movement speed vs is changed. It shows the change of the pattern of the exposure area Ae in the case of. In each figure, <1> is a diagram showing the exposure region Ae on the developed view of the peripheral surface of the photoconductor 12, and <2> is a diagram showing the exposed region Ae in each rotation aggregated on one developed view. It is a figure.

図8(a)は、vs=Wの場合の露光領域Aeのパターンを表している。図8(a)<2>に示すように、この場合の露光領域Aeは隙間なく配置された形態になる。むろん移動速度vsをvs=W以下の速度として故意に隣接する露光領域Aeを重複させてもよいが、ここではvs=Wをvsの最低速度vs=vsminと定義する。最低速度vsminの場合、形成された露光領域Aeの回転方向Dsの長さが最大になるので、偏磨耗領域Awの検知の観点からは好ましいが、計測時間が長くなる。また、本実施の形態は露光領域Aeと露光領域Aeとの間が隣接するので、上述した潜像におけるすそを考慮し、露光領域Aeの回転軸方向Dmの幅を偏磨耗領域Awの回転軸方向Dmの幅以下とするとよい。 FIG. 8A shows the pattern of the exposure region Ae when vs = W. As shown in FIG. 8A <2>, the exposure area Ae in this case is arranged without any gap. Of course, the moving speed vs. the speed of vs = W or less may be intentionally overlapped with the adjacent exposure regions Ae, but here, vs = W is defined as the minimum speed of vs = vsmin. In the case of the minimum speed vsmin, the length of the formed exposure region Ae in the rotation direction Ds is maximized, which is preferable from the viewpoint of detecting the uneven wear region Aw, but the measurement time is long. Further, in the present embodiment, since the exposure region Ae and the exposure region Ae are adjacent to each other, the width of the exposure region Ae in the rotation axis direction Dm is set to the rotation axis of the uneven wear region Aw in consideration of the skirt in the latent image described above. It is preferable that the width is equal to or less than the width of the direction Dm.

図9(b)は移動速度vsがvs=Lの場合、すなわち感光体12が1周する間に露光領域Aeが感光体12の一端から他端まで移動する形態を示している。図9(b)<2>に示すように、この場合に形成される露光領域Aeは1本である。むろん移動速度vsをvs=Lよりもさらに速くすることも可能であるが、露光領域Aeの回転方向Dsの長さが極端に狭くなっていくので、この移動速度vs=Lを移動速度vsの最高速度vs=vsmaxと定義する。最高速度vsmaxの場合、計測時間は短縮されるが、形成された露光領域Aeの回転方向Dsの長さが短くなるので偏磨耗領域Awの検知精度は低下する。 FIG. 9B shows a mode in which the movement speed vs. L = L, that is, the exposure region Ae moves from one end to the other end of the photoconductor 12 while the photoconductor 12 makes one round. As shown in FIG. 9B <2>, the number of exposed regions Ae formed in this case is one. Of course, it is possible to make the moving speed vs. L faster than vs = L, but since the length of the rotation direction Ds of the exposure area Ae becomes extremely narrow, this moving speed vs = L is the moving speed vs. It is defined as maximum speed vs = vsmax. In the case of the maximum speed vsmax, the measurement time is shortened, but the length of the formed exposure region Ae in the rotation direction Ds is shortened, so that the detection accuracy of the uneven wear region Aw is lowered.

図8(b)および図9(a)は、移動速度vsを最低速度vsminから最高速度vsmaxの間に設定した場合の露光領域Aeのパターンを示している。図8(b)は移動速度がvs=vsmid1の場合に形成される露光領域Aeのパターンを示しており、図9(a)はvs=vsmid2の場合に形成される露光領域Aeのパターンを各々示している。また、vsmid1<vsmid2である。すなわち、図8、図9の各図における移動速度vsの関係は以下のようになっている。
W=vsmin<vsmid1<vsmid2<vsmax=L
8 (b) and 9 (a) show the pattern of the exposure region Ae when the moving speed vs. the moving speed is set between the minimum speed vs min and the maximum speed vs max. FIG. 8B shows a pattern of the exposure region Ae formed when the moving speed is vs = vsmid1, and FIG. 9A shows a pattern of the exposure region Ae formed when the moving speed is vs = vsmid2, respectively. Shown. Further, vsmid1 <vsmid2. That is, the relationship between the moving speeds and the movement speeds in each of FIGS. 8 and 9 is as follows.
W = vsmin <vsmid1 <vsmid2 <vsmax = L

図8(b)<2>、図9(a)<2>に示すように、移動速度vsが最低速度vsminと最高速度vsmaxとの間にある場合は複数本の露光領域Aeが形成され、移動速度vsが速くなるほど露光領域Aeの傾斜角は大きくなり、露光領域Ae間の隙間が広くなる。偏磨耗領域Awの検知精度の観点からは図8(b)の形態が好ましく、計測時間の観点からは図9(a)の形態が好ましい。また、本実施の形態は露光領域Aeと露光領域Aeとの間に隙間があるため、上述した潜像におけるすその影響は抑制されているので、露光領域Aeの回転軸方向Dmの幅を偏磨耗領域Awの回転軸方向Dmの幅以上としてもよい。 As shown in FIGS. 8 (b) <2> and 9 (a) <2>, when the moving speed vs. is between the minimum speed vs min and the maximum speed vs max, a plurality of exposure regions Ae are formed. As the moving speed vs. becomes faster, the inclination angle of the exposure region Ae becomes larger, and the gap between the exposure regions Ae becomes wider. From the viewpoint of the detection accuracy of the uneven wear region Aw, the form of FIG. 8B is preferable, and from the viewpoint of the measurement time, the form of FIG. 9A is preferable. Further, in the present embodiment, since there is a gap between the exposure region Ae and the exposure region Ae, the influence of the hem on the latent image described above is suppressed, so that the width of the exposure region Ae in the rotation axis direction Dm is biased. It may be equal to or larger than the width of the wear region Aw in the rotation axis direction Dm.

ここで、上記の説明では理解のし易さから露光領域Aeの幅Wを所与のものとして移動速度vsを変える形態を例示して説明したが、逆に移動速度vsを所与のものとして露光領域Aeの幅Wを変える形態としてもよく、この形態の方が実用性の観点からは好ましいともいえる。この場合、露光領域Aeの幅Wを広くすると計測時間は短縮されるが、偏磨耗領域Awの回転軸方向Dmの幅に対する検知領域としての露光領域Aeの幅も広くなるので、偏磨耗領域Awの検知における位置精度が低下する。一方、特に露光領域Aeの幅Wを移動速度vsと等しくすると、図8(a)に示すように露光領域Aeが隙間なく緻密に配置され、いわゆる2次元マッピングを取得することも可能となる。 Here, in the above description, for ease of understanding, a mode in which the moving speed vs. is changed with the width W of the exposure region Ae as a given one is illustrated, but conversely, the moving speed vs. the given one is given. The width W of the exposure region Ae may be changed, and this form is preferable from the viewpoint of practicality. In this case, if the width W of the exposure region Ae is widened, the measurement time is shortened, but the width of the exposure region Ae as the detection region with respect to the width of the uneven wear region Aw in the rotation axis direction Dm is also widened, so that the uneven wear region Aw The position accuracy in the detection of is reduced. On the other hand, when the width W of the exposure region Ae is made equal to the moving speed vs. the movement speed vs. the exposure region Ae is arranged precisely without any gap as shown in FIG. 8A, so-called two-dimensional mapping can be obtained.

しかしながら、本実施の形態では図10(b)に示すような感光体12の周囲全体に亘って形成される偏磨耗領域Awを前提としているので、必ずしも2次元マッピングは必要ない。そこで、計測時間との兼ね合いから露光領域Aeの幅Wを移動速度vsで示される1回転あたりの回転軸方向Dmの移動距離よりも短くして、すなわち図8(b)あるいは図9(a)で示されるような露光領域Aeを形成して計測時間を短縮してもよい。好ましくは露光領域Aeの幅Wを、1回転あたりの回転軸方向Dmの移動距離の1/2程度とすることが計測精度および計測時間の両立の観点から好ましい。ただし、実用上は露光領域Aeの移動速度vsは再帯電電流の計測系の応答速度で決まる速度以下である必要がある。 However, since the present embodiment is premised on the uneven wear region Aw formed over the entire circumference of the photoconductor 12 as shown in FIG. 10B, two-dimensional mapping is not always necessary. Therefore, in consideration of the measurement time, the width W of the exposure region Ae is made shorter than the moving distance in the rotation axis direction Dm per rotation indicated by the moving speed vs. that is, that is, FIG. 8 (b) or FIG. 9 (a). The measurement time may be shortened by forming the exposure region Ae as shown by. It is preferable that the width W of the exposure region Ae is set to about ½ of the moving distance in the rotation axis direction Dm per rotation from the viewpoint of both measurement accuracy and measurement time. However, in practice, the moving speed vs. the moving speed of the exposure region Ae needs to be equal to or lower than the speed determined by the response speed of the recharge current measurement system.

10 画像形成装置
12 感光体
14 帯電部
16 露光部
18 現像部
20 転写部
22 清掃部
24 除電部
28 用紙
30 定着部
30A 加圧ローラ
30B 加熱ローラ
40 電源部
42 制御部
Ad 検知領域
Ae 露光領域
Aep プレ露光領域
Ag1〜Ag4、Agp1、Agp2 帯電履歴
Aw 偏磨耗領域
d 膜厚
f 幅
D1 走査方向
Dm 回転軸方向
Ds 回転方向
I 帯電電流
L 長さ
S 周囲長
P 展開図
N 初期膜厚
A 経時膜厚
E 寿命膜厚
P1〜P9 位置
R1 第1回転
R2 第2回転
R3 第3回転
R4 第4回転
R5 第5回転
TN トナー
VL 露光電位
VH 帯電電位
Vdeve 現像電位
vs 移動速度
W 幅
WL 白すじ
ΔI 電流ギャップ
ΔV 電位差
10 Image forming device 12 Photoreceptor 14 Charging unit 16 Exposing unit 18 Developing unit 20 Transfer unit 22 Cleaning unit 24 Static elimination unit 28 Paper 30 Fixing unit 30A Pressurizing roller 30B Heating roller 40 Power supply unit 42 Control unit Ad Detection area Ae Exposure area Aep Pre-exposure area Ag1 to Ag4, Agp1, Agp2 Charging history Aw Uneven wear area d Thickness f Width D1 Scanning direction Dm Rotation axis direction Ds Rotation direction I Charging current L Length S Peripheral length P Development view N Initial film thickness A Time-lapse film Thickness E Life thickness P1 to P9 Position R1 1st rotation R2 2nd rotation R3 3rd rotation R4 4th rotation R5 5th rotation TN Toner VL Exposure potential VH Charging potential Vdev Development potential vs Moving speed W Width WL White streak ΔI Current Gap ΔV potential difference

Claims (8)

回転軸を中心として回転する像保持体と、
前記像保持体の表面を帯電させる帯電手段と、
前記帯電時に流れる帯電電流を測定する測定手段と、
表面を帯電された前記像保持体に光を照射して露光し静電潜像を形成する露光手段と、
前記像保持体の表面を初期帯電させるように前記帯電手段を制御し、前記回転軸方向の予め定められた幅の光の照射領域を前記回転軸に沿って移動させつつ帯電された前記像保持体の表面を露光し露光領域を形成するように前記露光手段を制御し、露光された前記像保持体の表面を再度前記帯電手段により帯電させたときに流れる再帯電電流を測定するように前記測定手段を制御し、前記再帯電電流を用いて前記像保持体の異常を検知すると共に、前記初期帯電において発生する帯電履歴による前記再帯電電流の誤差を補正するように前記露光手段または前記帯電手段を制御し、前記像保持体を初期帯電する前に予め定められた領域を露光して補正露光領域を形成するように前記露光手段を制御する検知手段と、を含む
画像形成装置。
An image holder that rotates around the axis of rotation,
A charging means for charging the surface of the image holder and
A measuring means for measuring the charging current flowing during charging, and
An exposure means for forming an electrostatic latent image by irradiating the surface of the charged image holder with light to expose the image holder.
The charging means is controlled so as to initially charge the surface of the image holder, and the image holding is charged while moving an irradiation region of light having a predetermined width in the direction of the rotation axis along the rotation axis. The exposure means is controlled so as to expose the surface of the body to form an exposure region, and the recharge current that flows when the exposed surface of the image holder is recharged by the charging means is measured. The exposure means or the charging means so as to control the measuring means, detect the abnormality of the image holder by using the recharging current, and correct the error of the recharging current due to the charging history generated in the initial charging. An image forming apparatus including means for controlling the means and detecting means for controlling the exposure means so as to expose a predetermined region before initial charging the image holder to form a correction exposure region.
前記検知手段は、前記照射領域を予め定められた速度で等速に移動させる
請求項1に記載の画像形成装置。
The image forming apparatus according to claim 1, wherein the detection means moves the irradiation region at a constant speed at a predetermined speed.
前記予め定められた速度は、前記像保持体の1回転する間に前記照射領域が前記予め定められた幅だけ移動する速度である
請求項2に記載の画像形成装置。
The image forming apparatus according to claim 2, wherein the predetermined speed is a speed at which the irradiation region moves by the predetermined width during one rotation of the image holder.
前記予め定められた速度は、前記像保持体の1回転する間に前記照射領域が前記予め定められた幅だけ移動する速度より大きく、前記像保持体の1回転する間に前記露光手段が前記像保持体の前記回転軸方向の長さだけ移動する速度以下である
請求項2に記載の画像形成装置。
The predetermined speed is larger than the speed at which the irradiation region moves by the predetermined width during one rotation of the image holder, and the exposure means is said to be the exposure means during one rotation of the image holder. It is equal to or less than the speed at which the image holder moves by the length in the rotation axis direction.
The image forming apparatus according to claim 2.
前記検知手段は、前記露光領域と重ならない領域に前記補正露光領域が形成されるように前記露光手段を制御する
請求項1に記載の画像形成装置。
The detection means controls the exposure means so that the correction exposure region is formed in a region that does not overlap with the exposure region.
The image forming apparatus according to claim 1.
前記検知手段は、前記露光領域による帯電履歴の領域と重ならない領域に前記補正露光領域が形成されるように前記露光手段をさらに制御する
請求項5に記載の画像形成装置。
The detection means further controls the exposure means so that the correction exposure region is formed in a region that does not overlap with the region of the charging history of the exposure region.
The image forming apparatus according to claim 5.
前記再帯電電流の測定は前記像保持体の回転に伴って1または複数回転おきに行われ、 前記検知手段は、複数回の前記再帯電電流の測定の各々の間に前記初期帯電された領域を再帯電させるように前記帯電手段を制御する
請求項1に記載の画像形成装置。
The measurement of the recharge current is performed every one or more rotations with the rotation of the image holder, and the detection means is used for the initially charged region during each of the plurality of measurements of the recharge current. The charging means is controlled so as to recharge the battery.
The image forming apparatus according to claim 1.
前記検知手段は、前記像保持体の1または複数回転分の前記初期帯電を行った後前記再帯電が完了するまで前記照射領域の移動を停止させ、次の前記初期帯電後の露光を停止させた位置から開始するように、前記露光手段を制御する
請求項7に記載の画像形成装置。
The detection means stops the movement of the irradiation region until the recharge is completed after performing the initial charge for one or a plurality of rotations of the image holder, and stops the next exposure after the initial charge. The exposure means is controlled so as to start from a vertical position.
The image forming apparatus according to claim 7.
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