JP6940828B2 - Deposition mask, pattern manufacturing method, and organic semiconductor device manufacturing method - Google Patents

Description

The present invention relates to a method for manufacturing a vapor deposition mask, a pattern, and a method for manufacturing an organic semiconductor device.

Conventionally, in the production of an organic EL element, the formation of an organic layer or a cathode electrode of an organic EL element is composed of, for example, a metal formed by arranging a large number of fine slits in parallel at minute intervals in a region to be vapor-deposited. A vapor deposition mask was used. When this vapor deposition mask is used, the vapor deposition mask is placed on the surface of the substrate to be vapor-deposited and held from the back surface using a magnet, but since the rigidity of the slit is extremely small, when the vapor deposition mask is held on the substrate surface. The slits are easily distorted, which has been an obstacle to increasing the size of products with high definition or large slit lengths.

Various studies have been made on the vapor deposition mask for preventing the distortion of the slit. For example, in Patent Document 1, a base plate also serving as a first metal mask having a plurality of openings and the openings are covered. A second metal mask having a large number of fine slits in the region and a vapor deposition mask provided with a mask tension holding means for locating the second metal mask on the base plate in a state of being pulled in the longitudinal direction of the slits have been proposed. That is, a thin-film deposition mask that combines two types of metal masks has been proposed. According to this thin-film deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

By the way, recently, with the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for larger vapor deposition masks, which are used in the manufacture of vapor deposition masks made of metal. The metal plate is also getting larger. However, with the current metal processing technology, it is difficult to accurately form a slit in a large metal plate, and even if the method proposed in Patent Document 1 can prevent the slit portion from being distorted. It is not possible to deal with high definition slits. Further, when the vapor deposition mask is made of only metal, its mass increases as the size increases, and the total mass including the frame also increases, which hinders handling.

In the vapor deposition mask proposed above, in order to reduce the weight of the vapor deposition mask, it is necessary to reduce the thickness of the vapor deposition mask made of metal. However, if the thickness of the thin-film deposition mask made of metal is reduced, the strength of the thin-film deposition mask will be reduced accordingly, and the vapor-film deposition mask will be deformed or it will be difficult to handle. Problems will arise.

Japanese Unexamined Patent Publication No. 2003-332057

The present invention has been made in view of such a situation, and can satisfy both high definition and light weight even when the size is increased, and can form a high-definition vapor deposition pattern while maintaining strength. To provide a thin-film deposition mask capable of producing a thin-film deposition mask, to provide a thin-film deposition mask manufacturing method and a thin-film deposition mask preparation body capable of easily manufacturing the thin-film deposition mask, and to manufacture an organic semiconductor element with high accuracy. The main subject is to provide a method for manufacturing an organic semiconductor device capable of forming an organic semiconductor device.

The present invention for solving the above problems is a thin-film deposition mask for simultaneously forming a thin-film deposition pattern for a plurality of screens, and the thin-film deposition mask includes a resin mask having a resin opening and a metal having a metal opening. The layer is laminated, the resin mask has the resin opening necessary for forming a vapor deposition pattern for a plurality of screens, and the metal layer is one or a plurality of the metals. It has an opening, and at least one of the metal openings overlaps with the resin opening necessary for forming a vapor deposition pattern for one screen or two or more screens, and the vapor deposition pattern for one screen is formed. Of the distances between the plurality of resin openings required for forming the above and the plurality of resin openings required for forming the vapor deposition pattern for another one screen, the one with the shortest distance is displayed on the screen. when the distance between the distance between the screen, rather long than the distance between each resin opening adjacent the plurality of resin openings required to form a deposited pattern of one screen, the resin The thickness of the mask is 3 μm or more and 25 μm or less .
The thin-film deposition mask of one embodiment of the present disclosure is a thin-film deposition mask for simultaneously forming a thin-film deposition pattern for a plurality of screens, and the thin-film deposition mask includes a resin mask having a resin opening and a metal having a metal opening. The layer is laminated, the resin mask has the resin opening necessary for forming a vapor deposition pattern for a plurality of screens, and the metal layer is one or a plurality of the metals. It has an opening, and at least one of the metal openings overlaps the resin opening required to form a vapor deposition pattern for one screen or two or more screens.
Further, in the above-mentioned vapor deposition mask, the distance between the screens may be 1 mm or more and 100 mm or less.
Further, the above-mentioned vapor deposition mask is necessary for the resin mask to form an aggregate of a plurality of resin openings necessary for forming a vapor deposition pattern for one screen and another vapor deposition pattern for one screen. It may have a groove provided between the aggregate of a plurality of resin openings.
Further, in the above-mentioned vapor deposition mask, the coefficient of thermal expansion of the resin mask may be 16 ppm / ° C. or less, and the water absorption rate of the resin mask may be 1.0% or less.
Further, in the above-mentioned vapor deposition mask, when the surface of the metal layer on the resin mask side is the upper surface and the opposite side is the lower surface, the cross-sectional shape of the metal opening is changed from the upper surface side of the metal layer to the metal. It may have a shape that spreads toward the lower surface side of the layer.
Further, in the above-mentioned vapor deposition mask, when the surface of the resin mask on the metal layer side is the upper surface and the opposite side is the lower surface, the cross-sectional shape of the resin opening is changed from the lower surface side of the resin mask to the resin. The shape may be such that the mask expands toward the upper surface side.
Further, in the above-mentioned vapor deposition mask, the size of the resin opening ^{may be 500 μm 2} or more and 1000 μm ² or less.
Further, in the vapor deposition mask, the resin openings constituting the one screen may be arranged side by side in the vertical direction and the horizontal direction. Further, the resin openings constituting the one screen may be arranged side by side only in either the vertical direction or the horizontal direction.
Further, in the above-mentioned vapor deposition mask, the resin openings constituting the one screen are arranged in a plurality of rows in the vertical direction, and the resin openings in the adjacent rows are arranged so as to be displaced from each other in the vertical direction. Alternatively, there may be a plurality of rows arranged side by side, and the resin openings of adjacent rows may be arranged so as to be laterally displaced from each other.
Further, the vapor deposition mask of one embodiment is a vapor deposition mask for simultaneously forming a vapor deposition pattern for a plurality of screens, and the vapor deposition mask is used by being fixed on a frame and is provided with a plurality of slits. The metal mask and the resin mask are laminated, and the resin mask is provided with an opening necessary for forming a plurality of screens, and the opening corresponds to a pattern to be vapor-deposited. The slit is provided at a position where it overlaps with at least one entire screen.
Further, the cross-sectional shape of the opening may have a shape that expands from the surface of the resin mask that does not come into contact with the metal mask toward the surface of the resin mask that comes into contact with the metal mask.
Further, the cross-sectional shape of the slit may be such that the cross-sectional shape of the metal mask expands from the surface of the metal mask in contact with the resin mask toward the surface of the metal mask not in contact with the resin mask.
Further, the cross-sectional shape of the opening has a shape that expands from the surface of the resin mask that does not come into contact with the metal mask toward the surface of the resin mask that comes into contact with the metal mask. The cross-sectional shape of the slit may be such that the cross-sectional shape of the metal mask expands from the surface of the metal mask in contact with the resin mask toward the surface of the metal mask not in contact with the resin mask.
Further, the thickness of the resin mask may be 3 μm or more and 25 μm or less.
Further, in the present invention for solving the above problems, a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask is provided with an opening necessary for forming a plurality of screens. The opening corresponds to a pattern to be produced by vapor deposition, and is obtained by the vapor deposition mask preparation body in a vapor deposition mask preparation body for obtaining a vapor deposition mask in which each slit is provided at a position where at least one screen overlaps. The vapor deposition mask is used by being fixed on a frame, and is formed by laminating a metal mask provided with a slit on one surface of a resin plate, and each of the slits is finally formed on the resin plate. It is characterized in that it is provided at a position overlapping with the entire opening constituting one screen to be provided.
Further, the present invention for solving the above problems is a method for manufacturing a vapor deposition mask used by fixing it on a frame, and is a resin plate in which a metal mask provided with a plurality of slits and a resin plate are laminated. The metal mask includes a step of preparing a metal mask with a metal mask and a step of forming a resin mask by irradiating a laser from the metal mask side to form an opening necessary for forming a plurality of screens on the resin plate. A metal mask having a slit at a position overlapping with at least one of the plurality of screens is used.
Further, the present invention for solving the above problems is a method for manufacturing a vapor deposition mask that is fixed on a frame and used, and is a resin in which a metal mask provided with one through hole and a resin plate are laminated. It is provided with a step of preparing a metal mask with a plate and a resin mask forming step of irradiating a laser from the metal mask side to form a plurality of openings at positions overlapping the one through hole of the resin plate. It is a feature.
Further, the resin mask forming step may be performed after the metal mask with the resin plate is fixed on the frame.
Further, the invention of one embodiment is a thin-film deposition mask for simultaneously forming a thin-film deposition pattern for a plurality of screens, in which a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask is provided. An opening necessary for forming a plurality of screens is provided, the opening corresponds to a pattern to be produced by vapor deposition, and each slit is provided at a position overlapping at least one entire screen. It is a feature.

Further, the invention of one embodiment is a vapor deposition mask, in which a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be vapor-deposited are laminated, and the plurality. It is characterized in that all of the openings of the above are provided at positions overlapping with the one through hole.

Further, in the invention of one embodiment, a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask is provided with an opening necessary for forming a plurality of screens. In a vapor deposition mask preparation body for obtaining a vapor deposition mask in which each slit is provided at a position where at least one screen overlaps with a pattern to be produced by vapor deposition, a slit is provided on one surface of a resin plate. The metal masks are laminated, and each slit is provided at a position overlapping the entire opening forming one screen finally provided on the resin plate.

Further, in the invention of one embodiment, a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be vapor-deposited are laminated, and all of the plurality of openings are formed. In a thin-film mask preparation body for obtaining a thin-film mask provided at a position overlapping the one through hole, a metal mask provided with a slit on one surface of a resin plate is laminated, and each of the above 1 One through hole is provided at a position overlapping the entire opening finally provided in the resin plate.

Further, the invention of one embodiment is a method for manufacturing a vapor deposition mask, which comprises a step of preparing a metal mask with a resin plate in which a metal mask provided with a plurality of slits and a resin plate are laminated, and the metal mask. A resin mask forming step of irradiating a laser from the side to form an opening necessary for forming a plurality of screens on the resin plate is provided, and at least one of the plurality of screens is used as the metal mask. It is characterized in that a metal mask provided with a slit at a position overlapping the above is used.

Further, the invention of one embodiment is a method for manufacturing a vapor deposition mask, which comprises a step of preparing a metal mask with a resin plate in which a metal mask provided with one through hole and a resin plate are laminated, and the metal. It is characterized by comprising a resin mask forming step of irradiating a laser from the mask side to form a plurality of openings at positions overlapping the one through hole of the resin plate.

Further, in the above manufacturing method, the resin mask forming step may be performed after fixing the metal mask with the resin plate on the frame.

Further, the present invention for solving the above problems is a method for manufacturing an organic semiconductor element, which includes a step of forming a thin-film deposition pattern on a thin-film deposition object using a thin-film deposition mask with a frame in which a thin-film deposition mask is fixed to a frame. In the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is laminated with a metal mask provided with a plurality of slits and a resin mask, and the resin mask constitutes a plurality of screens. It is characterized in that an opening necessary for this purpose is provided, and each of the slits is a thin-film deposition mask provided at a position where it overlaps with at least one entire screen.

Further, the invention of one embodiment is a method for manufacturing an organic semiconductor element, which includes a step of forming a thin-film deposition pattern on a thin-film deposition object using a thin-film deposition mask with a frame in which a thin-film deposition mask is fixed to a frame. In the step of forming the thin-film deposition mask, a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to the patterns to be vapor-deposited are laminated. All of the plurality of openings are vapor deposition masks provided at positions overlapping the one through hole.

According to the thin-film deposition mask of the present invention, it is possible to satisfy both high definition and light weight even when the size is increased, and it is possible to form a high-definition vapor deposition pattern while maintaining the strength of the entire vapor deposition mask. Become. Further, according to the vapor deposition mask preparation body of the present invention and the method for manufacturing a vapor deposition mask, the vapor deposition mask having the above characteristics can be easily manufactured. Further, according to the method for manufacturing an organic semiconductor device of the present invention, the organic semiconductor device can be manufactured with high accuracy.

It is a front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a partially enlarged cross-sectional view of the vapor deposition mask shown in FIG. It is a front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a partially enlarged sectional view of the vapor deposition mask of embodiment (A). It is a front view which looked at the vapor deposition mask of embodiment (A) from the resin mask side. It is a schematic cross-sectional view which shows the relationship between the shadow and the thickness of a metal mask. It is a front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a process drawing for demonstrating an example of the manufacturing method of the vapor deposition mask of Embodiment (A). Note that (a) to (c) are all cross-sectional views. It is a front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. FIG. 11 is a partially enlarged cross-sectional view of the vapor deposition mask shown in FIG. It is a front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. FIG. 3 is a partially enlarged cross-sectional view of the vapor deposition mask shown in FIG. It is a front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. It is a partially enlarged sectional view of the vapor deposition mask of embodiment (B). It is a schematic cross-sectional view which shows the relationship between the shadow and the thickness of a metal mask. It is a front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. It is a process drawing for demonstrating an example of the manufacturing method of the vapor deposition mask of Embodiment (B). (A) to (c) are cross-sectional views. It is a front view which looked at the vapor deposition mask with a frame of one Embodiment from the resin mask side. It is a front view which looked at the vapor deposition mask with a frame of one Embodiment from the resin mask side.

Hereinafter, the vapor deposition mask 100 according to the embodiment of the present invention will be specifically described with reference to the embodiments (A) and (B).

<Evaporation mask of embodiment (A)>
As shown in FIGS. 1 to 7 and 9, the vapor deposition mask 100 of the embodiment (A) is a vapor deposition mask for simultaneously forming a vapor deposition pattern for a plurality of screens, and is provided with a plurality of slits 15. The metal mask 10 and the resin mask 20 are laminated, and the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens, and each slit 15 is provided at a position overlapping at least one entire screen. It is characterized by being. 1 and 3 to 5 and 9 are front views of the vapor deposition mask of the embodiment (A) as viewed from the metal mask side, and FIGS. 2 and 6 are portions of the vapor deposition mask shown in FIG. It is an enlarged schematic cross-sectional view.

The thin-film deposition mask 100 of the embodiment (A) is a thin-film deposition mask used for simultaneously forming a thin-film deposition pattern for a plurality of screens, and one thin-film deposition mask 100 simultaneously forms a thin-film deposition pattern corresponding to a plurality of products. Can be done. The "opening" referred to in the present specification means a pattern to be produced by using the vapor deposition masks of the embodiment (A) and the embodiment (B), and for example, the vapor deposition mask is organic in an organic EL display. When used for forming a layer, the shape of the opening 25 is the shape of the organic layer. In the vapor deposition mask 100 of the embodiment (A) and the embodiment (B), the vapor deposition material discharged from the vapor deposition source passes through the opening 25, so that a vapor deposition pattern corresponding to the opening 25 is formed on the vapor deposition target. Will be done. Further, the "one screen" is composed of an aggregate of openings 25 corresponding to one product, and when the one product is an organic EL display, it is necessary to form one organic EL display. An aggregate of organic layers, that is, an aggregate of openings 25 that become organic layers becomes a "one screen". Then, in the vapor deposition mask 100 of the embodiment (A), the above-mentioned "1 screen" is arranged on the resin mask 20 for a plurality of screens at a predetermined interval in order to simultaneously form a vapor deposition pattern for a plurality of screens. There is. That is, the resin mask 20 is provided with an opening 25 necessary for forming a plurality of screens.

In the vapor deposition mask of the embodiment (A), a metal mask 10 provided with a plurality of slits 15 is laminated on one surface of the resin mask, and each slit of the metal mask 10 overlaps at least one entire screen. It is characterized by being provided in. In other words, between the openings 25 required to form one screen and between the openings 25 adjacent in the horizontal direction, the length is the same as the vertical length of the slit 15 and is the same as the metal mask 10. There is no metal portion having the same length as the lateral length of the slit 15 and having the same thickness as the metal mask 10 between the thick metal wire portion and the vertically adjacent openings 25. It is characterized by. Hereinafter, the metal wire portion having the same length as the vertical length of the slit 15 and having the same thickness as the metal mask 10 and the same length as the horizontal length of the slit 15 and the same as the metal mask 10 The metal wire portion having a thickness may be collectively referred to as a metal portion.

According to the vapor deposition mask 100 of the embodiment (A), when the size of the openings 25 required to form one screen and the pitch between the openings 25 forming one screen are narrowed, for example, it exceeds 400 ppi. Even when the size of the openings 25 and the pitch between the openings 25 are extremely small in order to form the screen, it is possible to prevent interference due to the metal portion, and it is possible to form a high-definition image. It will be possible. When one screen is divided by a plurality of slits, in other words, when a metal wire portion exists between the openings 25 constituting the one screen, the openings 25 constituting the one screen are formed. As the pitch between them becomes narrower, it is necessary to thin the metal portions existing between the openings 25. However, when the metal portion existing between the openings 25 constituting one screen is thinned, the frequency of breakage of the metal portion increases, and the broken metal portion may have an adverse effect at the time of vapor deposition. ..

Further, when a metal portion exists between the openings 25 constituting one screen, the metal portion causes the generation of shadows, which makes it difficult to form a high-definition screen. The shadow is thinner than the target vapor deposition film thickness because a part of the vapor deposition material discharged from the vapor deposition source collides with the inner wall surface of the slit 15 of the metal mask 10 and does not reach the vapor deposition target. It refers to a phenomenon in which an undeposited portion that becomes a film thickness is generated. In particular, as the shape of the openings 25 becomes finer, the influence of shadows due to the metal portions existing between the openings 25 in one screen becomes larger. That is, in the vapor deposition mask of the embodiment (A), the durability of the vapor deposition mask is improved by providing a slit at a position overlapping at least one screen, that is, by not allowing a metal portion to exist between the openings 25 constituting one screen. , The point is to prevent the influence of shadows.

Further, according to the thin-film deposition mask 100 of the embodiment (A), the weight can be reduced as compared with the conventional thin-film deposition mask. Specifically, when the mass of the vapor deposition mask 100 of the embodiment (A) and the mass of the vapor deposition mask composed of only conventionally known metals are compared, assuming that the thickness of the entire vapor deposition mask is the same. The mass of the vapor deposition mask 100 of the embodiment (A) is reduced by the amount that a part of the metal material of the conventionally known vapor deposition mask is replaced with the resin material. Further, in order to reduce the weight by using a thin-film deposition mask composed of only metal, it is necessary to reduce the thickness of the thin-film deposition mask. However, when the thickness of the thin-film deposition mask is reduced, the thin-film deposition mask is used. When the size is increased, the vapor deposition mask may be distorted or its durability may be reduced. On the other hand, according to the vapor deposition mask of the embodiment (A), even when the thickness of the entire vapor deposition mask is increased in order to satisfy the distortion and durability when the size is increased, the resin mask 20 Due to its presence, it is possible to reduce the weight of the vapor deposition mask, which is formed only from metal. Hereinafter, each will be specifically described. This also applies to the vapor deposition mask of the embodiment (B) described later.

(Resin mask forming the vapor deposition mask of embodiment (A))
As the resin mask 20 forming the vapor deposition mask of the embodiment (A), a conventionally known resin material can be appropriately selected and used, and the material is not particularly limited, but a high-definition opening 25 is formed by laser processing or the like. It is preferable to use a lightweight material, which has a small dimensional change rate and moisture absorption rate with respect to heat and aging. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, and ethylene-. Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylate copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a hygroscopicity of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable. .. By using a resin mask using this resin material, the dimensional accuracy of the opening 25 can be improved, and the dimensional change rate and the moisture absorption rate with heat and aging can be reduced. In the vapor deposition mask of the embodiment (A), the resin mask 20 is made of a resin material capable of forming a high-definition opening 25 as compared with the metal material as described above. Therefore, the vapor deposition mask 100 having a high-definition opening 25 can be obtained. The same applies to the vapor deposition mask of the embodiment (B).

The thickness of the resin mask 20 is also not particularly limited, but when vapor deposition is performed using the vapor deposition mask 100 of the embodiment (A), the vapor deposition portion, that is, the so-called shadow, which is thinner than the target vapor deposition film thickness. It is preferable that the resin mask 20 is as thin as possible in order to prevent the occurrence of the above. However, when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, the risk of defects such as pinholes and deformation can be reduced, and the generation of shadows can be effectively prevented. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, the influence of shadows when forming a high-definition pattern exceeding 400 ppi can be more effectively prevented. .. Further, in the vapor deposition mask of the embodiment (A), even when the thickness of the resin mask 20 is reduced to the above preferable range, the vapor deposition mask is present due to the presence of the metal mask 10 provided on the resin mask 20. It is possible to satisfy the durability and handleability of 100 as a whole. The same applies to the vapor deposition mask of the embodiment (B).

In the vapor deposition mask 100 of the embodiment (A), the metal mask 10 and the resin mask 20 may be directly bonded or may be bonded via an adhesive layer, but the pressure-sensitive adhesive layer may be used. When the metal mask 10 and the resin mask 20 are joined via the above, the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is 3 μm or more and 25 μm or less, preferably 3 μm or more, in consideration of the above shadow points. It is preferably set to be within the range of 10 μm, particularly preferably 4 μm or more and 8 μm or less. The same applies to the vapor deposition mask of the embodiment (B).

Further, since the vapor deposition mask 100 of the embodiment (A) has a structure in which the resin mask 20 and the metal mask 10 are laminated, the durability of the entire vapor deposition mask can be improved by the presence of the metal mask 10. As a result, handling performance and prevention of breakage and deformation are achieved. The same applies to the vapor deposition mask of the embodiment (B).

Next, an example of the opening 25 constituting one screen will be described with reference to FIGS. 1 and 3 to 6. In the illustrated form, the area closed by the broken line is one screen. In the illustrated form, an aggregate of a small number of openings 25 is set as one screen for convenience of explanation, but the present invention is not limited to this form. For example, when one opening 25 is set to one pixel, one screen is used. There may be an opening 25 of several million pixels in the space.

In the form shown in FIG. 1, one screen is composed of an aggregate of openings 25 provided with a plurality of openings 25 in the vertical and horizontal directions. In the form shown in FIG. 3, one screen is composed of an aggregate of openings 25 provided with a plurality of openings 25 in the lateral direction. Further, in the form shown in FIG. 4, one screen is composed of an aggregate of openings 25 provided with a plurality of openings 25 in the vertical direction. Then, in FIGS. 1, 3, and 4, slits 15 are provided at positions overlapping the entire screen.

As described above, the slit 15 of the metal mask 10 may be provided at a position overlapping only one screen, and as shown in FIGS. 5A and 5B, the slit 15 has 2 slits. It may be provided at a position overlapping the entire screen as described above. In FIG. 5A, in the resin mask shown in FIG. 1, a slit 15 is provided at a position overlapping the entire two screens that are continuous in the lateral direction. In FIG. 5B, a slit 15 is provided at a position overlapping the entire three screens that are continuous in the vertical direction. When the entire plurality of screens overlap with one slit, as the ratio of the region occupied by the slit 15 to the entire surface of the metal mask 10 increases, the ratio occupied by the metal portion provided on the resin mask decreases, and the vapor deposition mask The durability of 100 as a whole tends to decrease. Therefore, when the entire plurality of screens are overlapped with one slit, it is necessary to appropriately set the durability of the entire vapor deposition mask 100 in consideration.

Next, the pitch between the openings 25 constituting one screen and the pitch between the screens will be described by taking the form shown in FIG. 1 as an example. The pitch between the openings 25 constituting one screen and the size of the openings 25 are not particularly limited, and can be appropriately set according to the pattern to be produced by thin film deposition. For example, when forming a high-definition vapor deposition pattern of 400 ppi, the horizontal pitch (P1) and the vertical pitch (P2) of the adjacent openings 25 in the openings 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. Further, one opening 25 is not limited to corresponding to one pixel, and for example, depending on the pixel arrangement, a plurality of pixels may be grouped into one opening 25.

The horizontal pitch (P3) and the vertical pitch (P4) between the screens are also not particularly limited, but as shown in FIG. 1, when one slit 15 is provided at a position overlapping the entire screen. Will have a metal part between each screen. Therefore, the horizontal pitch (P3) and the vertical pitch (P4) between the screens are the horizontal pitch (P1) and the vertical pitch (P2) of the opening 25 provided in one screen. If it is smaller than, or if it is substantially equivalent, the metal portion existing between the screens is likely to be broken. Therefore, in consideration of this point, it is preferable that the pitch between the screens (P3, P4) is wider than the pitch between the openings 25 constituting one screen (P1, P2). As an example of the pitch (P3, P4) between screens, it is about 1 mm to 100 mm. The pitch between screens means the pitch between openings adjacent to one screen and another screen adjacent to the one screen.

As shown in FIG. 5, when one slit 15 is provided at a position overlapping the entire two or more screens, a metal portion is provided between the plurality of screens provided in the one slit 15. Will not exist. Therefore, in this case, the pitch between two or more screens provided at positions overlapping with one slit 15 may be substantially the same as the pitch between the openings 25 constituting one screen.

The cross-sectional shape of the opening 25 is also not particularly limited, and the facing end faces of the resin masks forming the opening 25 may be substantially parallel to each other. However, as shown in FIGS. 2 and 6, the opening 25 is the same. It is preferable that the cross-sectional shape has a shape that spreads toward the vapor deposition source. In other words, it is preferable to have a tapered surface that spreads toward the metal mask 10 side. By adopting the cross-sectional shape of the opening 25 as such, it is possible to prevent shadows from being generated in the pattern to be vapor-deposited when the vapor deposition is performed using the thin-film deposition mask of the embodiment (A). The taper angle θ can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but is a straight line connecting the lower bottom tip at the opening of the resin mask and the upper bottom tip at the opening of the resin mask. In the thickness direction cross section of the inner wall surface forming the opening 25 of the resin mask 20, the inner wall surface of the opening 25 does not come into contact with the metal mask 10 of the resin mask 20. The angle (θ) formed with the side surface (the lower surface of the resin mask in the illustrated form) is preferably in the range of 5 ° to 85 °, and more preferably in the range of 15 ° to 80 °. It is preferably in the range of 25 ° to 65 °, and more preferably in the range of 25 ° to 65 °. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. Further, in FIGS. 2 and 6, the end face forming the opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, an opening. The overall shape of the portion 25 may be a bowl shape. The opening 25 having such a cross-sectional shape is a multi-stage laser that appropriately adjusts the laser irradiation position and the laser irradiation energy at the time of forming the opening 25, or changes the irradiation position stepwise. It can be formed by irradiation. 2 and 6 are partially enlarged cross-sectional views showing an example of the vapor deposition mask 100 in the form shown in FIG. The same applies to the vapor deposition mask of the embodiment (B), and FIGS. 2 and 6 may be read as FIGS. 12 and 16, respectively.

Since the resin mask 20 uses a resin material, the opening 25 can be formed regardless of the processing method used for conventional metal processing, for example, an etching processing method or a processing method such as cutting. That is, the method of forming the opening 25 is not particularly limited, and an opening is made by using various processing methods, for example, a laser processing method capable of forming a high-definition opening 25, precision press processing, photolithography processing, or the like. The part 25 can be formed. The method of forming the opening 25 by a laser processing method or the like will be described later. The same applies to the vapor deposition mask of the embodiment (B).

Examples of the etching processing method include a spray etching method in which an etching material is sprayed from an injection nozzle at a predetermined spray pressure, a dipping etching method in an etching solution filled with the etching material, and a spin etching method in which the etching material is dropped. An etching method or a dry etching method using gas, plasma, or the like can be used. The same applies to the vapor deposition mask of the embodiment (B).

Further, in the thin-film deposition mask of the embodiment (A), since the resin mask 20 is used as the configuration of the thin-film deposition mask 100, when vapor deposition is performed using the thin-film deposition mask 100, the opening 25 of the resin mask 20 is filled. Very high heat is applied, and gas may be generated from the end face (see FIG. 6) forming the opening 25 of the resin mask 20, which may reduce the degree of vacuum in the vapor deposition apparatus. Therefore, in consideration of this point, as shown in FIG. 6, it is preferable that the barrier layer 26 is provided on the end face forming the opening 25 of the resin mask 20. By forming the barrier layer 26, it is possible to prevent gas from being generated from the end face forming the opening 25 of the resin mask 20. The same applies to the vapor deposition mask of the embodiment (B), and FIG. 6 may be read as FIG.

As the barrier layer 26, an inorganic oxide, an inorganic nitride, a metal thin film layer or a vapor-deposited layer can be used. As the inorganic oxide, oxides of aluminum, silicon, indium, tin, and magnesium can be used, and as the metal, aluminum and the like can be used. The thickness of the barrier layer 26 is preferably about 0.05 μm to 1 μm. The same applies to the vapor deposition mask of the embodiment (B).

Further, the barrier layer 26 preferably covers the surface of the resin mask 20 on the vapor deposition source side (not shown). By covering the surface of the resin mask 20 on the vapor deposition source side with the barrier layer 26, the barrier property is further improved. The barrier layer is preferably formed by various PVD (physical vapor deposition) methods and CVD (chemical vapor deposition) methods in the case of inorganic oxides and inorganic nitrides. In the case of a metal, it is preferably formed by various PVD methods such as a sputtering method, an ion plating method, and a vacuum vapor deposition method, particularly by a vacuum vapor deposition method. The surface of the resin mask 20 on the vapor deposition source side may be the entire surface of the resin mask 20 on the vapor deposition source side, and is exposed from the metal mask on the surface of the resin mask 20 on the vapor deposition source side. It may be only the part that is. The same applies to the vapor deposition mask of the embodiment (B).

Further, when the vapor deposition mask of the embodiment (A) is used for vapor deposition on the vapor deposition target, a magnet or the like is arranged behind the vapor deposition target and the vapor deposition mask 100 in front of the vapor deposition target is attracted by a magnetic force. When the vapor deposition mask (A) and the vapor deposition object are brought into close contact with each other, it is preferable to provide a magnetic layer (not shown) made of a magnetic material on the surface of the resin mask 20 on the side not in contact with the metal mask 10. .. By providing the magnetic layer, the magnetic layer and the vapor-deposited object can be attracted by a magnetic force, and the vapor-deposited mask of the embodiment (A) and the vapor-deposited object can be sufficiently adhered to each other without a gap. It is possible to prevent the thickening of the thin-film deposition pattern that may occur due to the gap between the thin-film deposition mask and the object to be vapor-deposited. Specifically, in the vapor deposition mask of the embodiment (A), since no metal portion exists between the openings 25 constituting one screen, the vapor deposition of the embodiment (A) is performed in the region corresponding to one screen. The mask 100 and the object to be vapor-deposited cannot be brought into close contact with each other. On the other hand, when the magnetic layer is provided, the vapor deposition mask 100 of the embodiment (A) and the vapor deposition target can be brought into close contact with each other even in the region where the magnetic layer is provided. By providing the magnetic layer on the region corresponding to the screen, the adhesion between the vapor deposition mask 100 of the embodiment (A) and the vapor deposition object can be improved. The thin-film deposition pattern thickening refers to a phenomenon in which a thin-film deposition pattern having a shape larger than the target vapor deposition pattern is formed. When the vapor deposition mask 100 of the embodiment (A) and the vapor deposition object are brought into close contact with each other by a method other than attracting them by a magnetic force, it is not particularly necessary to provide a magnetic layer. The same applies to the vapor deposition mask of the embodiment (B).

Examples of the material of the magnetic layer include iron, nickel, cobalt, and alloys containing these metals. The thickness of the magnetic layer is not particularly limited, but is preferably 0.05 μm or more and 1 μm or less. The same applies to the vapor deposition mask of the embodiment (B).

FIG. 7 is a front view of another aspect of the resin mask. As shown in FIG. 7, it is preferable that a groove 28 extending in the vertical direction or the horizontal direction (vertical direction in the case of FIG. 7) of the resin mask 20 is formed on the resin mask 20. When heat is applied during vapor deposition, the resin mask 20 thermally expands, which may cause changes in the size and position of the opening 25. However, the expansion of the resin mask is absorbed by forming the groove 28. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and changing the size and position of the opening 25 due to the accumulation of thermal expansion generated at various parts of the resin mask. The formation position of the groove 28 is not limited, and may be provided between the openings 25 constituting one screen or at a position overlapping the openings 25, but it is preferable that the grooves 28 are provided between the screens. Further, the groove may be provided only on one surface of the resin mask, for example, the surface on the side in contact with the metal mask, or may be provided only on the surface on the side not in contact with the metal mask. Alternatively, it may be provided on both sides of the resin mask 20.

In FIG. 7, a groove 28 extending in the vertical direction is formed between adjacent screens, but the present invention is not limited to this, and a groove extending in the horizontal direction may be formed between adjacent screens. Furthermore, it is also possible to form a groove in a mode in which these are combined.

The depth and width of the groove 28 are not particularly limited, but if the depth of the groove 28 is too deep or the width is too wide, the rigidity of the resin mask 20 tends to decrease. It is necessary to set in consideration of. Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method such as a U-shape or a V-shape. The same applies to the vapor deposition mask of the embodiment (B).

(Metal mask forming the vapor deposition mask of embodiment (A))
The metal mask 10 forming the vapor deposition mask of the embodiment (A) is made of metal and is provided with a plurality of slits 15. In the vapor deposition mask of the embodiment (A), as described above, each slit 15 is provided at a position where it overlaps with at least one entire screen. In other words, the opening 25 constituting one screen is provided at a position overlapping with one slit 15.

Next, using FIGS. 8 (a) to 8 (c), the generation of shadows, the generation of shadows that may occur due to the thickness of the metal mask 10, and the slits are provided at positions that overlap at least one screen. The superiority of the vapor deposition mask 100 of the form (A) will be described. 8 (a) is a partially enlarged cross-sectional view of the vapor deposition mask in which the opening 25a constituting one screen is divided by a plurality of slits 15a, and FIG. 8 (b) is a partially enlarged cross-sectional view of FIG. 8 (a). ) Is a partially enlarged cross-sectional view showing a state in which the thickness of the metal mask is increased in the thin-film deposition mask. FIG. 8 (c) is a partially enlarged cross-sectional view showing an example of the vapor deposition mask 100 of the embodiment (A) in which one slit 15 is provided at a position overlapping the entire screen, and FIG. 8 (d) is a partially enlarged cross-sectional view. , FIG. 8C is a partially enlarged cross-sectional view showing a state in which the thickness of the metal mask 10 is increased in the vapor deposition mask 100 in FIG. 8C. Further, in the illustrated form, one screen is an aggregate of openings 25 provided with five openings in the horizontal direction (arbitrary in the vertical direction).

As shown in FIG. 8A, when the openings 25a constituting one screen are divided by a plurality of slits 15a, a metal portion forming a wall surface of the slits 15a in a part of the adjacent openings 25a. Will exist. When the pitch of the openings 25a and the shape of the openings 25a are miniaturized in order to form a high-definition thin-film deposition pattern, when a metal portion exists between the openings 25a constituting one screen. The metal portion hinders the passage of the vapor-deposited material discharged from the vapor deposition source into the opening 25a, which makes it difficult to produce a high-definition thin-film deposition pattern. Further, when the thickness of the metal mask 10a is reduced, the durability of the entire vapor deposition mask is also lowered. When the thickness of the metal mask 10a is increased as shown in FIG. 8B in order to improve the durability of the entire vapor deposition mask, the vapor deposition material discharged from the vapor deposition source is more contained in the metal portion. It is easy to collide with the wall surface. As the amount of the vapor-deposited material that collides with the inner wall surface increases, the amount of the vapor-deposited material that cannot reach the object to be vapor-deposited increases, and shadows are generated more prominently. Further, when the pitch between the openings 25a is narrowed, it is necessary to thin the metal portion existing between the openings 25a, which increases the risk of disconnection of the metal portion. If the metal portion is broken, the durability of the entire vapor deposition mask is reduced.

On the other hand, in the vapor deposition mask of the embodiment (A), as shown in FIG. 8 (c), the entire screen, that is, all the openings 25 provided in the screen are positioned so as to overlap with one slit 15. It is provided in. Therefore, as shown in FIG. 8C, the vapor-deposited material can be passed through the opening 25 without waste, and the generation of shadows can be prevented. Further, as shown in FIG. 8D, even when the thickness of the metal mask 10 is increased to some extent, the influence of shadows is small and a high-definition vapor deposition pattern can be formed. In particular, in the vapor deposition mask of the embodiment (A), the generation of shadows can be prevented even when the thickness of the metal mask 10 is set to about 100 μm. By increasing the thickness of the metal mask 10, the durability of the entire vapor deposition mask 100 is improved. Therefore, the vapor deposition mask of the embodiment (A) enables the formation of a high-definition vapor deposition pattern, but the thickness thereof is increased. Durability can be improved by setting appropriately.

The thickness of the metal mask 10 is not particularly limited, but is preferably 100 μm or less, preferably 50 μm or less, in order to more effectively prevent the generation of shadows in the opening 25 located near the inner wall surface of the slit 15. It is more preferable that there is, and it is particularly preferable that it is 35 μm or less. The same applies to the vapor deposition mask of the embodiment (B), and the slit 15 may be read as a through hole.

Further, in the vapor deposition mask 100 of the embodiment (A), in order to sufficiently prevent the occurrence of shadows, as shown in FIGS. 2 and 6, the cross-sectional shape of the slit 15 is widened toward the vapor deposition source. It is preferable to have such a shape. By adopting such a cross-sectional shape, even if the thickness of the entire vapor deposition mask is increased for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the vapor deposition mask is discharged from the vapor deposition source. The thin-film deposition material can reach the object to be vapor-deposited without colliding with the surface of the slit 15 or the inner wall surface of the slit 15. Specifically, the angle formed by the lower bottom tip of the slit 15 of the metal mask 10 and the upper bottom tip of the slit 15 of the metal mask 10 and the bottom surface of the metal mask 10, in other words, the metal mask 10. In the thickness direction cross section of the inner wall surface constituting the slit 15, the angle formed by the inner wall surface of the slit 15 and the surface of the metal mask 10 in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is 5. It is preferably in the range of ° to 85 °, more preferably in the range of 15 ° to 80 °, and even more preferably in the range of 25 ° to 65 °. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. With such a cross-sectional shape, even when the thickness of the metal mask 10 is relatively increased for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the metal mask 10 is discharged from the vapor deposition source. The vapor-deposited material can reach the object to be vapor-deposited without colliding with the inner wall surface of the slit 15. Thereby, the occurrence of shadow can be prevented more effectively. The facing end faces of the openings 25 of the resin mask 20 may be substantially parallel, but as described above. It is preferable that the slit 15 of the metal mask 10 and the opening 25 of the resin mask 20 both have a cross-sectional shape that expands toward the vapor deposition source side.

The material of the metal mask 10 is not particularly limited, and conventionally known materials in the field of vapor deposition masks can be appropriately selected and used. Examples thereof include metal materials such as stainless steel, iron-nickel alloys, and aluminum alloys. .. Among them, the Invar material, which is an iron-nickel alloy, can be preferably used because it is less deformed by heat. The same applies to the vapor deposition mask of the embodiment (B).

Further, when the vapor deposition mask 100 of the embodiment (A) is used to perform vapor deposition on the substrate, when it is necessary to arrange a magnet or the like behind the substrate and attract the vapor deposition mask 100 in front of the substrate by a magnetic force. It is preferable that the metal mask 10 is made of a magnetic material. The magnetic metal mask 10 is an alloy of iron-nickel alloy, pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, and iron containing cobalt, tungsten, chromium, and carbon. KS steel, MK steel mainly composed of iron, nickel and aluminum, NKS steel obtained by adding cobalt and titanium to MK steel, Cu-Ni-Co steel, aluminum (Al) -iron (Fe) alloy, etc. Can be done. When the material itself forming the metal mask 10 is not a magnetic material, magnetism may be imparted to the metal mask 10 by dispersing the powder of the magnetic material in the material. The same applies to the vapor deposition mask of the embodiment (B).

FIG. 9 is a front view showing another aspect of the vapor deposition mask 100 of the embodiment (A). As shown in FIG. 9, in the front view of the vapor deposition mask 100 viewed from the metal mask 10 side, the openings 25 constituting one screen may be arranged alternately in the lateral direction. That is, the openings 25 adjacent to each other in the horizontal direction may be arranged so as to be displaced in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion generated in each place can be absorbed by the opening 25, and the expansion can be prevented from accumulating and causing a large deformation. Can be done.

<Evaporation mask of embodiment (B)>
As shown in FIGS. 11 and 12, the vapor deposition mask of the embodiment (B) is a metal mask 10 provided with one through hole 15 and a resin mask provided with a plurality of openings corresponding to the patterns to be vapor-deposited. 20 is laminated, and all of the plurality of openings 25 are provided at positions overlapping with one through hole provided in the metal mask 10. 11 is a front view of the vapor deposition mask of the embodiment (B) as viewed from the metal mask side, and FIG. 12 is a partially enlarged schematic cross-sectional view of the vapor deposition mask shown in FIG.

According to the vapor deposition mask 100 of the embodiment (B), since the metal mask 10 is provided on the resin mask 20, the durability and handleability of the vapor deposition mask 100 can be improved. If the vapor deposition mask is made of only the resin mask without providing the metal mask 10 on the resin mask 20, the durability and handleability of the vapor deposition mask will decrease. In particular, in order to form a high-definition vapor deposition pattern, the thickness of the resin mask is preferably thin, and when the thickness of the resin mask is reduced, the durability of the vapor deposition mask consisting of only the resin mask is increased. , Handling performance will be further reduced.

According to the thin-film deposition mask of the embodiment (B), even when the thickness of the resin mask 20 is reduced as described above, the presence of the metal mask 10 provides sufficient durability to the thin-film deposition mask 100. , Handleability can be imparted.

Further, in the vapor deposition mask of the embodiment (B), a metal mask 10 having one through hole 15 is provided on the resin mask 20 having a plurality of openings 25, and all of the plurality of openings 25 are provided. Is provided at a position overlapping the one through hole 15. In the vapor deposition mask 100 of the embodiment (B) having this configuration, since the metal portion does not exist between the openings 25, the opening 25 provided in the resin mask 20 is provided without being interfered by the metal portion. It is possible to form a high-definition vapor deposition pattern according to the dimensions.

Hereinafter, the superiority of the vapor deposition mask of the embodiment (B) will be specifically described with reference to FIG. In FIG. 17A, the opening 25a of the resin mask 20a is divided by a plurality of through holes 15a, and a metal portion forming a wall surface of the through hole 15a exists between the openings 25a. It is a partially enlarged sectional view of the vapor deposition mask. Further, FIG. 17B is a partially enlarged cross-sectional view of the vapor deposition mask in which the thickness of the metal mask 10a is increased in FIG. 17A.

As shown in FIGS. 17 (a) and 17 (b), when a metal portion forming the wall surface of the through hole 15a is present between the openings 25a, the vapor deposition mask shown in FIGS. 17 (a) and 17 (b) is used. At the time of forming the used vapor deposition pattern, the vapor deposition material discharged from the vapor deposition source collides with the metal portion, and the accuracy of the formed vapor deposition pattern is lowered due to the influence of the shadow. The shadow means that a part of the vapor deposition material discharged from the vapor deposition source collides with the wall surface of the through hole of the metal mask and does not reach the vapor deposition target, so that the vapor deposition film thickness is higher than the target vapor deposition film thickness for the vapor deposition pattern. It refers to a phenomenon in which an undeposited portion with a thin film thickness occurs. Collision of the vapor-deposited material with the metal portion may occur more remarkably as the thickness of the metal portion increases, in other words, as the thickness of the metal mask 10a increases.

In order to prevent the generation of shadows, it is effective to reduce the thickness of the metal mask 10a as shown in FIG. 17A, but the size of the opening 25a is large in order to form a high-definition vapor deposition pattern. When the pitch between the openings 25a is reduced, even if the thickness of the metal mask 10a is reduced and the thickness of the metal portion existing between the openings 25a is reduced, it is affected by the shadow. It is difficult to form a high-definition vapor deposition pattern. Further, by reducing the thickness of the metal mask 10a, the durability of the entire vapor deposition mask is also reduced. Further, when the pitch between the openings 25a is narrowed, it is necessary to thin the metal portion existing between the openings 25a, which increases the risk of disconnection of the metal portion.

On the other hand, in the vapor deposition mask 100 of the embodiment (B), as shown in FIGS. 17 (c) and 17 (d), there is no metal portion forming the wall surface of the through hole 15 between the openings 25, so that the shadow is formed. It is possible to form a high-definition vapor deposition pattern without being affected by. In other words, since the metal portion forming the wall surface of the through hole 15 is located near the end of the vapor deposition mask 100, it is possible to form a high-definition vapor deposition pattern without affecting the formation of the vapor deposition pattern. It will be possible. Further, as shown in FIG. 17D, even when the thickness of the metal mask 10 is increased, the thickness of the metal mask 10 is made durable because it is hardly affected by the shadow. The thickness can be increased until the properties and handleability can be sufficiently satisfied, and the durability and handleability can be improved while enabling the formation of a high-definition vapor deposition pattern.

(Resin mask forming the vapor deposition mask of embodiment (B))
The resin mask 20 forming the vapor deposition mask of the embodiment (B) is made of resin, and as shown in FIG. 12, a plurality of openings 25 corresponding to the pattern to be vapor-deposited are provided at positions overlapping one through hole 15. ing. The opening 25 corresponds to a pattern to be produced by vapor deposition, and when the vapor deposition material discharged from the vapor deposition source passes through the opening 25, a vapor deposition pattern corresponding to the opening 25 is formed in the object to be vapor-deposited. NS. In the illustrated form, an example in which the openings are arranged in a plurality of rows vertically and horizontally is described, but the openings may be arranged only in the vertical direction or the horizontal direction. The vapor deposition mask 100 of the embodiment (A) is provided with the slit 15 of the metal mask 10 at a position overlapping at least one screen composed of an aggregate of openings provided in the resin mask, whereas the slit 15 of the metal mask 10 is provided in the embodiment (B). ) Is different from the vapor deposition mask of the embodiment (A) in that the through holes 15 of the metal mask 10 are located at positions overlapping with all the openings provided in the resin mask. Other than this difference, the embodiment described in the vapor deposition mask of the above embodiment (A) can be appropriately selected. Hereinafter, the differences will be mainly described.

The shape and size of the opening 25 are not particularly limited, and may be any shape and size corresponding to the pattern to be vapor-deposited. Further, as shown in FIG. 11, the pitch P1 in the vertical direction and the pitch P2 in the horizontal direction of the adjacent openings 25 can also be appropriately set according to the pattern to be vapor-deposited. For example, when forming a high-definition vapor deposition pattern of 400 ppi, the vertical pitch (P1) and the horizontal pitch (P2) of the adjacent openings 25 in the openings 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. Further, one opening 25 is not limited to corresponding to one pixel, and for example, depending on the pixel arrangement, a plurality of pixels may be grouped into one opening 25.

The thin-film deposition mask 100 of the embodiment (B) may be used for forming a thin-film deposition pattern corresponding to one screen, or may be used for simultaneously forming a thin-film deposition pattern corresponding to two or more screens. good. In this case, as shown in FIG. 15, it is preferable that the openings 25 are provided at predetermined intervals for each screen unit. In FIG. 15, the area closed by the broken line is referred to as “1 screen”. In FIG. 15, one screen is composed of twelve openings 25, but the present invention is not limited to this form. For example, when one opening 25 is one pixel, millions of openings 25 are formed. One screen can also be configured by the opening 25. As an example of the pitch between screens, both the vertical pitch and the horizontal pitch are about 1 mm to 100 mm. The pitch between screens means the pitch between openings adjacent to one screen and another screen adjacent to the one screen.

FIG. 18 is a front view showing another aspect of the vapor deposition mask 100 of the embodiment (B). As shown in FIG. 18, in the front view of the vapor deposition mask 100 viewed from the metal mask 10 side, the openings 25 may be arranged alternately in the lateral direction. That is, the openings 25 adjacent to each other in the horizontal direction may be arranged so as to be displaced in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion generated in each place can be absorbed by the opening 25, and the expansion can be prevented from accumulating and causing a large deformation. Can be done.

(Metal mask forming the vapor deposition mask of embodiment (B))
The metal mask 10 forming the vapor deposition mask of the embodiment (B) is made of metal and has one through hole 15. Then, in the vapor deposition mask of the embodiment (B), the one through hole 15 is arranged at a position overlapping all the openings 25 when viewed from the front of the metal mask 10, in other words, in the resin mask 20. It is arranged at a position where all the openings 25 can be seen.

The metal portion constituting the metal mask 10, that is, the portion other than the through hole 15, may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 11, and the size of the metal mask 10 as shown in FIG. The outer peripheral portion of the resin mask 20 may be exposed by making the thickness smaller than that of the resin mask 20. Note that FIG. 14 is a partially enlarged schematic cross-sectional view of the vapor deposition mask shown in FIG. Further, the size of the metal mask 10 may be made larger than that of the resin mask 20, and a part of the metal portion may be projected outward in the horizontal direction or outward in the vertical direction of the resin mask. In any case, the size of the through hole 15 is smaller than the size of the resin mask 20.

The width (W1) in the horizontal direction and the width (W2) in the vertical direction of the metal portion forming the wall surface of the through hole of the metal mask 10 shown in FIG. 11 are not particularly limited, but the widths of W1 and W2 become narrower. As it goes on, durability and handleability tend to decrease. Therefore, it is preferable that W1 and W2 have a width that can sufficiently satisfy durability and handleability. An appropriate width can be appropriately set according to the thickness of the metal mask 10, but as an example of a preferable width, both W1 and W2 are about 1 mm to 100 mm.

Further, in order to sufficiently prevent shadow generation in the opening 25 located near the inner wall surface of the through hole 15, it is preferable that the cross-sectional shape of the through hole 15 has a shape that spreads toward the vapor deposition source. .. With such a cross-sectional shape, the thin-film deposition material discharged from the thin-film deposition source can pass through the opening 25 located near the inner wall surface of the through-hole 15 without waste. Specifically, the angle formed by the lower bottom tip of the through hole 15 of the metal mask 10 and the straight line connecting the upper bottom tip of the through hole 15 of the metal mask 10 and the bottom surface of the metal mask 10 is 25 ° to 65 °. It is preferably within the range of. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used.

The vapor deposition mask 100 of the embodiment (B) of the present invention has been described above focusing on an example in which only one through hole 15 is provided in the metal mask 10, but the metal mask 10 has a plurality of through holes 15. May be provided. In this case, it is an essential condition that one of the plurality of through holes 15 is provided at a position overlapping with all the openings 25 provided in the resin mask 20.

(Method for manufacturing vapor deposition mask according to embodiment (A))
Next, a method for manufacturing the vapor deposition mask according to the embodiment (A) of the present invention will be described. As shown in FIG. 10A, the method for manufacturing the vapor deposition mask 100 of the embodiment (A) is a metal mask with a resin plate in which a metal mask 10 provided with a plurality of slits 15 and a resin plate 30 are laminated. And a resin mask forming step of irradiating a laser from the metal mask side as shown in FIG. 10B to form an opening 25 necessary for forming a plurality of screens on the resin plate 30. However, as the metal mask 10 constituting the metal mask with a resin plate, a metal mask provided with a slit 15 that overlaps at least one of the plurality of screens is used. Hereinafter, the method for manufacturing the vapor deposition mask of the embodiment (A) will be specifically described.

(Process of preparing a metal mask with a resin plate)
In preparing a metal mask with a resin plate in which a metal mask 10 provided with slits and a resin plate 30 are laminated as shown in FIG. 10A, first, a metal mask provided with a plurality of slits 15 is prepared. .. In the method for manufacturing the vapor deposition mask of the embodiment (A), the metal mask 10 prepared here is the entire opening 25 provided in at least one screen as described in the vapor deposition mask 100 of the embodiment (A). A metal mask 10 provided with a slit 15 that overlaps with the metal mask 10 is used.

The method of laminating the metal mask and the resin plate for forming the metal mask with the resin plate and the forming method are not particularly limited. For example, a laminate in which a resin layer is previously formed on the metal plate to be the metal mask by coating. It is also possible to obtain a metal mask with a resin plate by preparing a body and forming a slit 15 in a metal plate in a laminated state. In the method for producing a vapor-deposited mask according to the embodiment (A), the resin plate constituting the metal mask with a resin plate also includes a resin layer formed by coating as described above. That is, the resin plate may be prepared in advance or may be formed by a conventionally known coating method or the like. Further, the metal mask 10 and the resin plate may be bonded to each other by using various adhesives, or a resin plate having self-adhesiveness may be used. The size of the metal mask 10 and the resin plate 30 may be the same. Considering the subsequent fixing to the frame, the size of the resin plate 30 is made smaller than that of the metal plate 10, and the outer peripheral portion of the metal mask 10 is exposed. It is preferable because it is easy to weld with. The same applies to the method for manufacturing the vapor deposition mask of the embodiment (B), and the slit may be read as one through hole.

As a method of forming the metal mask 10 provided with the slit 15, a masking member, for example, a resist material is applied to the surface of the metal plate, a predetermined portion is exposed and developed, and finally the slit 15 is formed. A resist pattern is formed leaving the position where it is formed. As the resist material used as the masking member, a resist material having good processability and desired resolution is preferable. Next, this resist pattern is used as an etching resistant mask and etched by an etching method. After the etching is completed, the resist pattern is washed and removed. As a result, a metal mask 10 provided with a plurality of slits 15 can be obtained. The etching for forming the slit 15 may be performed from one side of the metal plate or from both sides. Further, when a slit 15 is formed in a metal plate by using a laminate in which a resin plate is provided on the metal plate, a masking member is applied to the surface of the metal plate on the side not in contact with the resin plate, and then a resist pattern is formed. Then, the slit 15 is formed by etching from one side. When the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. It is necessary to coat the surface of the resin plate with a masking member. Further, in the above description, the resist material has been mainly described as the masking member, but instead of applying the resist material, a dry film resist may be laminated and the same patterning may be performed. The same applies to the method for manufacturing the vapor deposition mask of the embodiment (B), and the slit may be read as one through hole.

(Process of fixing a metal mask with a resin plate to the frame)
The step is an arbitrary step in the method for manufacturing the vapor deposition mask of the embodiment (A), but the completed vapor deposition mask is not fixed to the frame, but is applied to a metal mask with a resin plate fixed to the frame. Since the opening is provided later, the position accuracy can be remarkably improved. When the completed vapor deposition mask 100 is fixed to the frame, the metal mask whose opening has been determined is fixed while being pulled with respect to the frame. Therefore, the opening position coordinate accuracy is higher than that in the case of having this step. It will decrease.

The method of fixing the metal mask with the resin plate to the frame is not particularly limited, and for example, a conventionally known process method such as spot welding may be appropriately adopted.

(A process of irradiating a laser from the metal mask side to form an opening corresponding to a pattern to be vapor-deposited on the resin plate of a metal mask with a resin plate)
Next, as shown in FIG. 10B, a laser is irradiated from the metal mask 10 side of the metal mask with a resin plate through the slit 15 to form an opening 25 corresponding to the pattern to be vapor-deposited on the resin plate 30. , Resin mask 20. The laser device used here is not particularly limited, and a conventionally known laser device may be used. As a result, the vapor deposition mask 100 of the embodiment (A) as shown in FIG. 10 (c) is obtained.

In the manufacturing method of the embodiment (A), since the metal mask 10 in which the slits 15 are provided in advance at positions overlapping the entire screen or two or more screens is used, one slit 15 is used in this step. Inside, an opening 25 necessary for forming one screen or an opening 25 necessary for forming two or more screens is formed. That is, one slit 15 is provided so as to overlap the opening that constitutes the entire screen or the opening 25 that constitutes the entire two or more screens.

Further, when the opening 25 is provided in the resin plate of the metal mask with the resin plate fixed to the frame, a pattern to be vapor-deposited, that is, a reference plate in which a pattern corresponding to the opening 25 to be formed is provided in advance (not shown). And this reference plate is attached to the surface of the resin plate on the side where the metal mask 10 is not provided, laser irradiation corresponding to the pattern of the reference plate may be performed from the metal mask 10 side. .. According to this method, the opening 25 can be formed in a so-called facing state in which laser irradiation is performed while observing the pattern of the reference plate attached to the metal mask with the resin plate, and the dimensional accuracy of the opening is extremely high. A high-definition opening 25 can be formed. Further, in this method, since the opening 25 is formed while being fixed to the frame, it is possible to obtain a vapor deposition mask having excellent not only dimensional accuracy but also position accuracy.

When the above method is used, it is necessary that the pattern of the reference plate can be recognized by a laser irradiation device or the like from the metal mask 10 side via the resin plate 30. When the resin plate has a certain thickness, it is necessary to use a transparent plate, but as described above, a preferable thickness considering the influence of shadow, for example, about 3 μm to 25 μm. When the thickness is set, the pattern of the reference plate can be recognized even if the resin plate is colored. The same method can be used for the method for producing the vapor deposition mask of the embodiment (B).

The method of bonding the metal mask with the resin plate and the reference plate is also not particularly limited. For example, when the metal mask 10 is a magnetic material, a magnet or the like is arranged behind the reference plate to form a metal with a resin plate. It can be bonded by attracting the resin plate 30 of the mask and the reference plate. In addition to this, it is also possible to bond them by using an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined opening pattern, a photomask, and the like. The same method can be used for the method for producing the vapor deposition mask of the embodiment (B).

Further, the slimming step may be performed between or after the steps described above. For example, when a resin plate 30 that finally becomes a resin mask 20 or a metal mask 10 that is thicker than the preferable thickness described above is used, the metal mask 10 or the resin plate 30 is used during the manufacturing process. When it is transported alone, it can be provided with excellent durability and transportability. On the other hand, in order to prevent the generation of shadows and the like, the thickness of the vapor deposition mask 100 obtained by the manufacturing method of the embodiment (A) is preferably the optimum thickness. The slimming step is a useful step for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability between or after the manufacturing steps.

The slimming of the metal mask 10 is performed during or after the steps described above, on the side surface of the metal mask 10 that does not come into contact with the resin plate 30, or the surface of the metal mask 10 that does not come into contact with the resin plate 30 or the resin mask 20. Can be realized by etching the metal mask 10 with an etching material that can be etched.

The same applies to the slimming of the resin plate 30 serving as the resin mask 20 and the slimming of the resin mask 20, that is, the optimization of the thickness of the resin plate 30 and the resin mask 20. The surface of the resin plate 30 that does not come into contact with the metal mask 10 or the surface of the resin mask 20 that does not come into contact with the metal mask 10 is etched with an etching material capable of etching the material of the resin plate 30 and the resin mask 20. It is possible to do so. Further, after forming the thin-film deposition mask 100, both the metal mask 10 and the resin mask 30 can be etched to optimize the thickness of both. The slimming step described above can be applied as it is to the method for producing a vapor-deposited mask according to the embodiment (B).

(Method for manufacturing vapor deposition mask according to embodiment (B))
Next, a method for manufacturing the vapor deposition mask according to the embodiment (B) of the present invention will be described. In the method for manufacturing the vapor deposition mask 100 of the embodiment (B), as shown in FIG. 19, a metal mask with a resin plate in which a metal mask 10 provided with one through hole and a resin plate 30 are laminated is prepared. A step (see FIG. 19A) and a resin mask forming step of irradiating a laser from the metal mask 10 side to form a plurality of openings 25 at positions overlapping with one through hole 15 of the resin plate 30 (FIG. 19 (FIG. 19). b) It is characterized by having (see). Hereinafter, the method for manufacturing the vapor deposition mask of the embodiment (B) will be specifically described.

(Process of preparing a metal mask with a resin plate)
This step is a step of preparing a metal mask with a resin plate in which the metal mask 10 and the resin plate 30 are laminated by laminating the metal mask 10 provided with one through hole 15 and the resin plate 30. ..

(Process of fixing a metal mask with a resin plate to the frame)
The step is an arbitrary step in the method for manufacturing the vapor deposition mask of the embodiment (B), and the method described in the method for manufacturing the vapor deposition mask of the above embodiment (A) can be used as it is. The description is omitted.

(A process of irradiating a laser from the metal mask side to form a plurality of openings overlapping one through hole in a metal mask with a resin plate)
Next, as shown in FIG. 19B, a laser is irradiated from the metal mask 10 side through one through hole 15 to form an opening 25 corresponding to the pattern to be vapor-deposited on the resin plate 30, and the resin mask is formed. It is set to 20. In this step, since the laser is irradiated through one through hole 15, a plurality of openings 25 are finally formed at a position overlapping the one through hole 15. The laser device used here is not particularly limited, and a conventionally known laser device may be used. As a result, the vapor deposition mask 100 of the embodiment (B) is obtained as shown in FIG. 19 (c).

(Evaporation mask preparation body)
Next, the vapor deposition mask preparation body according to the embodiment of the present invention will be described. In the vapor deposition mask preparation body of the embodiment of the present invention, a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask is provided with an opening necessary for forming a plurality of screens. The part corresponds to the pattern to be produced by vapor deposition, and each slit is a vapor deposition mask preparation body for obtaining a vapor deposition mask provided at a position where at least one screen overlaps, and is formed on one surface of a resin plate. A metal mask provided with slits is laminated, and each slit is provided at a position overlapping with the entire opening forming one screen finally provided on the resin plate.

The vapor deposition mask preparation body of the embodiment of the present invention is common to the vapor deposition mask 100 of the embodiment (A) described above except that the resin plate is not provided with the opening 25, and the specific description thereof will be described. Omit. As a specific configuration of the vapor deposition mask preparation body of one embodiment, a metal mask with a resin plate prepared in the preparation step in the method for manufacturing the vapor deposition mask of the above embodiment (A) (see FIG. 10A) can be mentioned. be able to.

According to the thin-film deposition mask preparation body of the above-described embodiment, by forming an opening in the resin plate of the thin-film deposition mask preparation body, both high-definition and light-weight can be satisfied even when the size is increased, and high-definition vapor deposition is performed. A vapor deposition mask capable of forming a pattern can be obtained.

In the vapor deposition mask preparation body of the other embodiment, a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to the pattern to be vapor-deposited are laminated, and all of the plurality of openings are provided. Is a thin-film mask preparation body for obtaining a thin-film mask provided at a position overlapping with one through hole, and a metal mask having one through hole is laminated on one surface of a resin plate. Therefore, one through hole is provided at a position overlapping with all the openings finally provided in the resin plate.

The vapor deposition mask preparation body of the other embodiment is common to the vapor deposition mask 100 of the embodiment (B) described above except that the resin plate is not provided with the opening 25, and specific description thereof will be omitted. .. As a specific configuration of the vapor deposition mask preparation body of another embodiment, a metal mask with a resin plate (see FIG. 19A) prepared in the preparation step in the method for manufacturing the vapor deposition mask of the above embodiment (B) is used. Can be mentioned.

According to the thin-film deposition mask preparation body of the other embodiment, by forming an opening in the resin plate of the thin-film deposition mask preparation body, both high definition and light weight are satisfied even when the size is increased, and high definition is achieved. It is possible to obtain a thin-film deposition mask capable of forming a thin-film deposition pattern.

(Manufacturing method of organic semiconductor device)
Next, a method for manufacturing an organic semiconductor device according to an embodiment of the present invention will be described. The method for manufacturing an organic semiconductor device according to an embodiment of the present invention includes a step of forming a vapor deposition pattern by a vapor deposition method using a thin-film deposition mask with a frame, and in the step of forming the organic semiconductor device, the following vapor-film deposition mask with a frame Is characterized in that is used.

The method for manufacturing an organic semiconductor element of one embodiment, which comprises a step of forming a vapor deposition pattern by a vapor deposition method using a thin-film deposition mask with a frame, includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, and a counter electrode forming step. , A sealing layer forming step and the like, and a thin-film deposition pattern is formed on the substrate by a thin-film deposition method using a thin-film deposition mask with a frame in each arbitrary step. For example, when a vapor deposition method using a thin-film vapor deposition mask with a frame is applied to the light-emitting layer forming steps of each of the R, G, and B colors of the organic EL device, a thin-film deposition pattern of each color-emitting layer is formed on the substrate. The method for manufacturing an organic semiconductor device according to an embodiment of the present invention is not limited to these steps, and can be applied to any conventionally known step in manufacturing an organic semiconductor device using a vapor deposition method.

In the method for manufacturing an organic semiconductor device according to an embodiment of the present invention, in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is the vapor deposition mask of the embodiment (A) described above, or the embodiment. It is a vapor deposition mask of (B).

As the thin-film deposition mask constituting the thin-film deposition mask with a frame, the thin-film deposition mask 100 of the embodiment (A) or the embodiment (B) described above can be used as it is, and detailed description thereof will be omitted here. According to the method for manufacturing an organic semiconductor device using the thin-film deposition mask of the embodiment (A) of the present invention described above and the thin-film deposition mask with a frame including the thin-film deposition mask of the embodiment (B), the organic semiconductor device has a high-definition pattern. An organic semiconductor device can be formed. Examples of the organic semiconductor device manufactured by the method for manufacturing an organic semiconductor device according to the embodiment of the present invention include an organic layer, a light emitting layer, a cathode electrode, and the like of an organic EL device. In particular, the method for manufacturing an organic semiconductor device according to an embodiment of the present invention can be suitably used for manufacturing R, G, and B light emitting layers of an organic EL device that requires high-definition pattern accuracy.

The thin-film vapor deposition mask with a frame used for manufacturing an organic semiconductor device satisfies the condition that the thin-film deposition mask of the embodiment (A) or the embodiment (B) described above is fixed to the frame. Often, there are no particular restrictions on other conditions. The frame is not particularly limited as long as it is a member capable of supporting the vapor deposition mask, and for example, a metal frame, a ceramic frame, or the like can be used. Above all, the metal frame is preferable because it is easy to weld the vapor deposition mask to the metal mask and the influence of deformation and the like is small. Hereinafter, an example in which a metal frame is used as the frame will be mainly described. For example, as shown in FIG. 20, a vapor deposition mask 200 with a metal frame in which one vapor deposition mask 100 is fixed to the metal frame 60 may be used, and as shown in FIG. 21, a plurality of vapor deposition masks 60 may be used. You may use the thin-film deposition mask 200 with a metal frame in which the thin-film deposition masks (four thin-film deposition masks in the illustrated form) are fixed side by side in the vertical direction or the horizontal direction (fixed side by side in the horizontal direction in the illustrated form). 20 and 21 are front views of the vapor deposition mask 200 with a metal frame of one embodiment as viewed from the resin mask 20 side.

The metal frame 60 is a frame member having a substantially rectangular shape, and has an opening for exposing the opening 25 provided in the resin mask 20 of the vapor deposition mask 100 to be finally fixed to the vapor deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, for example, SUS or an invar material is suitable.

The thickness of the metal frame is also not particularly limited, but is preferably about 10 mm to 30 mm from the viewpoint of rigidity and the like. The width between the inner peripheral end face of the opening of the metal frame and the outer peripheral end face of the metal frame is not particularly limited as long as the width can fix the metal frame and the metal mask of the vapor deposition mask, for example, 10 mm to A width of about 50 mm can be exemplified.

Further, the reinforcing frame 65 or the like may be present in the opening of the metal frame as long as the exposure of the opening 25 of the resin mask 20 constituting the vapor deposition mask 100 is not hindered. In other words, the opening of the metal frame 60 may have a structure divided by a reinforcing frame or the like. In the form shown in FIG. 20, a plurality of reinforcing frames 65 extending in the horizontal direction are arranged in the vertical direction, but instead of the reinforcing frames 65, or in addition to the reinforcing frames 65 extending in the vertical direction, a plurality of reinforcing frames extending in the vertical direction are arranged in a plurality of rows in the horizontal direction. It may have been done. Further, in the form shown in FIG. 21, a plurality of reinforcing frames 65 extending in the vertical direction are arranged in the horizontal direction, but instead of or in addition to the reinforcing frames 65, the reinforcing frames extending in the horizontal direction are arranged in the vertical direction. A plurality of them may be arranged. By using the metal frame 60 in which the reinforcing frame 65 is arranged, a plurality of the vapor deposition masks 100 of the embodiment (A) or the embodiment (B) described above are arranged vertically and horizontally on the metal frame 60. When fixing, the vapor deposition mask can be fixed to the metal frame 60 even at a position where the reinforcing frame and the vapor deposition mask overlap.

The method of fixing the metal frame 60 to the vapor deposition mask 100 of the embodiment (A) or the embodiment (B) described above is also not particularly limited, and is fixed by spot welding, adhesive, screwing or the like by laser light or the like. It can be fixed by using or the like.

100 ... Vapor deposition mask 10 ... Metal mask 15 ... Slit, through hole 20 ... Resin mask 25 ... Opening 28 ... Groove 60 ... Metal frame 200 ... Vapor deposition mask with frame

Claims (13)

A thin-film mask for simultaneously forming thin-film deposition patterns for multiple screens.
The vapor deposition mask is obtained by laminating a resin mask having a resin opening and a metal layer having a metal opening.
The resin mask has the resin openings necessary for forming a vapor deposition pattern for a plurality of screens.
The metal layer has one or more of the metal openings.
At least one of the metal openings overlaps with the resin openings required to form a vapor deposition pattern for one screen or two or more screens.
The distance between the plurality of resin openings required to form the vapor deposition pattern for one screen and the plurality of resin openings required to form the vapor deposition pattern for another screen is the distance. When the shortest distance is taken as the distance between the screens, the distance between the screens is larger than the distance between the adjacent resin openings in the plurality of resin openings required to form the vapor deposition pattern for one screen. It is rather long,
A vapor deposition mask having a thickness of 3 μm or more and 25 μm or less. The vapor deposition mask according to claim 1, wherein the distance between the screens is 1 mm or more and 100 mm or less. The resin mask is an aggregate of a plurality of resin openings required for forming a vapor deposition pattern for one screen, and an aggregate of a plurality of resin openings required for forming another vapor deposition pattern for one screen. The vapor deposition mask according to claim 1 or 2, which has a groove provided between the body and the body. The vapor deposition mask according to any one of claims 1 to 3, wherein the resin mask has a coefficient of thermal expansion of 16 ppm / ° C. or less. The vapor deposition mask according to any one of claims 1 to 4, wherein the resin mask has a water absorption rate of 1.0% or less. When the surface of the metal layer on the resin mask side is the upper surface and the opposite side is the lower surface, the cross-sectional shape of the metal opening is from the upper surface side of the metal layer toward the lower surface side of the metal layer. The vapor deposition mask according to any one of claims 1 to 5, which has a spread. When the surface of the resin mask on the metal layer side is the upper surface and the opposite side is the lower surface, the cross-sectional shape of the resin opening is from the lower surface side of the resin mask toward the upper surface side of the resin mask. The vapor deposition mask according to any one of claims 1 to 6, which has a spread. The vapor deposition mask according to any one of claims 1 to 7, wherein the size of the resin opening is 500 μm ² or more and 1000 μm ² or less. The vapor deposition mask according to any one of claims 1 to 8, wherein the resin openings constituting the one screen are arranged side by side in the vertical direction and the horizontal direction. The vapor deposition mask according to any one of claims 1 to 8, wherein the resin openings constituting the one screen are arranged side by side only in either the vertical direction or the horizontal direction. The resin opening constituting the one screen is
There are a plurality of rows arranged in the vertical direction, and the resin openings of the adjacent rows are arranged so as to be vertically offset from each other.
The vapor deposition mask according to any one of claims 1 to 8, wherein there are a plurality of rows arranged side by side, and the resin openings of adjacent rows are arranged so as to be laterally displaced from each other. It is a method of manufacturing a pattern produced by thin film deposition.
A method for producing a pattern, which uses the vapor deposition mask according to any one of claims 1 to 11. A method for manufacturing organic semiconductor devices.
A method for manufacturing an organic semiconductor device, which uses the vapor deposition mask according to any one of claims 1 to 11.

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