JP6941564B2 - 蒸発した材料を堆積させるための蒸発源、及び蒸発した材料を堆積させるための方法 - Google Patents
蒸発した材料を堆積させるための蒸発源、及び蒸発した材料を堆積させるための方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- Organic Chemistry (AREA)
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- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims (14)
- 基板上に蒸発した原料物質を堆積させるための蒸発源(20)であって、
複数のノズル(22)を有する1以上の分配管(106)、及び
複数の開孔(32)を備えた遮蔽デバイス(30)であって、前記複数の開孔(32)のうちの少なくとも1つの開孔が、単一の関連付けられたノズルから放出された蒸発した原料物質のプルーム(318)を個別に形作るように構成された、遮蔽デバイス(30)を備え、
前記少なくとも1つの開孔が、円周壁(34)によって取り囲まれた通路として構成され、
前記円周壁(34)が、第1の断面内で、主たる放出方向(X)に対して第1の最大放出角度(θ)よりも大きい放出角度を有する前記プルーム(318)の前記蒸発した原料物質を遮断するように構成され、
前記円周壁(34)が、前記第1の断面と垂直な第2の断面内で、前記主たる放出方向(X)に対して第2の最大放出角度(β)よりも大きい放出角度を有する前記プルーム(318)の前記蒸発した原料物質を遮断するように構成されており、
各ノズルの出口が、前記遮蔽デバイス(30)の中へ少なくとも部分的に突出する、蒸発源。 - 前記第1の断面が水平面であり、前記第2の断面が垂直面であり、前記第1の最大放出角度(θ)が10度から45度までの角度であり、前記第2の最大放出角度が15度から60度までの角度である、請求項1に記載の蒸発源。
- 各ノズルの出口が、前記遮蔽デバイス(30)の中へ、前記遮蔽デバイス(30)に接触することなく、少なくとも部分的に突出する、請求項1または2に記載の蒸発源。
- 主たる放出方向(X)における前記円周壁の長さが、周方向において変動する、請求項1から3のいずれか一項に記載の蒸発源。
- 前記円周壁(34)の前記長さが、前記第1の断面における第1の長さ(T1)から前記第2の断面における第2の長さ(T2)へ連続的に変動する、請求項4に記載の蒸発源。
- 前記少なくとも1つの開孔が、丸い通路として、円形状の通路として、又は卵型の通路として構成されている、請求項1から5のいずれか一項に記載の蒸発源。
- 前記遮蔽デバイス(30)が、複数の分離した遮蔽ユニット(60)を備え、前記複数の分離した遮蔽ユニット(60)の各遮蔽ユニットが、前記複数の開孔(32)のうちの少なくとも1つの開孔を備える、請求項1から6のいずれか一項に記載の蒸発源。
- 前記複数の分離した遮蔽ユニット(60)のうちの少なくとも1つの遮蔽ユニットが、直線的な配置で支持構造体によって連結された、前記複数の開孔(32)のうちの2つ、3つ、4つ、又は5つ以上の開孔を備える、請求項7に記載の蒸発源。
- 前記少なくとも1つの遮蔽ユニットが、前記1以上の分配管(106)のうちの単一の分配管に連結され、前記少なくとも1つの遮蔽ユニットが、前記単一の分配管の長さ方向において、前記単一の分配管と同じように熱膨張及び収縮をする、請求項8に記載の蒸発源。
- 互いに隣接して配置された2以上の分配管(106)を備え、前記複数の分離した遮蔽ユニット(60)の各遮蔽ユニットが、前記1以上の分配管のうちの単一の分配管と連結され、前記複数のノズル(22)のうちの2つ以上の隣接するノズルの前記蒸発した原料物質のプルームを個別に形作るために、前記複数の開孔(32)のうちの2つ以上の開孔を備える、請求項7から9のいずれか一項に記載の蒸発源。
- 前記複数の分離した遮蔽ユニット(60)のうちの少なくとも1つの遮蔽ユニットが、前記複数の分離した遮蔽ユニット(60)のうちの残りの遮蔽ユニットから機械的に連結解除されている、請求項7から10のいずれか一項に記載の蒸発源。
- 前記複数の分離した遮蔽ユニット(60)のうちの少なくとも1つの遮蔽ユニットが、前記1以上の分配管から熱的に分離されている、請求項7から11のいずれか一項に記載の蒸発源。
- 基板(10)上に蒸発した原料物質を堆積させるための、請求項1から12のいずれか一項に記載の蒸発源(20)、のための遮蔽デバイス(30)であって、
複数の分離した遮蔽ユニット(60)であって、各遮蔽ユニットが、円周壁(34)によって取り囲まれた通路として構成された1以上の開孔を備え、各開孔が、前記蒸発源の単一の関連付けられたノズルから放出された蒸発した原料物質のプルーム(318)を個別に形作るように構成され、前記ノズルの出口が前記1以上の開孔のうちの開孔の中へ少なくとも部分的に突出する、遮蔽ユニット(60)を備える、遮蔽デバイス。 - 真空チャンバ内の基板(10)上に蒸発した原料物質を堆積させるための方法であって、
蒸発源(20)の1以上の分配管(106)の複数のノズル(22)であって、各々が前記基板(10)に向けて伝播する蒸発した原料物質のプルームを生成する、複数のノズル(22)を通して蒸発した原料物質を誘導すること、及び
遮蔽デバイス(30)の複数の開孔(32)によって、前記蒸発した原料物質のプルームを形作ることを含み、
前記複数の開孔のうちの少なくとも1つの開孔が、単一の関連付けられたノズルから放出された、蒸発した原料物質のプルームを個別に形作り、
前記少なくとも1つの開孔が、円周壁(34)によって取り囲まれた通路として構成され、前記円周壁(34)が、第1の断面内で、主たる放出方向(X)に対して第1の最大放出角度(θ)よりも大きい放出角度を有するプルーム(318)の前記蒸発した原料物質を遮断するように構成され、前記円周壁(34)が、前記第1の断面と垂直な第2の断面内で、前記主たる放出方向(X)に対して第2の最大放出角度(β)よりも大きい放出角度を有する前記プルーム(318)の前記蒸発した原料物質を遮断するように構成され、
各ノズルの出口が、前記遮蔽デバイス(30)の中へ少なくとも部分的に突出する、方法。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/060439 WO2017194097A1 (en) | 2016-05-10 | 2016-05-10 | Evaporation source for depositing an evaporated material, and method for depositing an evaporated material |
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|---|---|---|---|
| JP2019216101A Division JP7201573B2 (ja) | 2019-11-29 | 2019-11-29 | 蒸発した材料を堆積させるための蒸発源、及び蒸発した材料を堆積させるための方法 |
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| Publication Number | Publication Date |
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| JP2018521216A JP2018521216A (ja) | 2018-08-02 |
| JP6941564B2 true JP6941564B2 (ja) | 2021-09-29 |
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| JP2017557363A Active JP6941564B2 (ja) | 2016-05-10 | 2016-05-10 | 蒸発した材料を堆積させるための蒸発源、及び蒸発した材料を堆積させるための方法 |
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| Country | Link |
|---|---|
| JP (1) | JP6941564B2 (ja) |
| KR (1) | KR102058612B1 (ja) |
| CN (2) | CN115074662A (ja) |
| TW (1) | TWI638899B (ja) |
| WO (1) | WO2017194097A1 (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL154472A (en) * | 2003-02-16 | 2007-10-31 | Amir Satran | Cutting tool and cartridge therefor |
| JP2020521039A (ja) * | 2018-05-04 | 2020-07-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 蒸発した材料を堆積させるための蒸発源、真空堆積システム、及び蒸発した材料を堆積させるための方法 |
| JP7036676B2 (ja) * | 2018-06-13 | 2022-03-15 | 株式会社アルバック | 真空蒸着装置用の蒸着源 |
| WO2020025145A1 (en) * | 2018-08-03 | 2020-02-06 | Applied Materials, Inc. | An evaporation source to deposit evaporated source materials, a method of shielding evaporated source materials and a shielding device for an evaporation source |
| CN109628886B (zh) * | 2019-01-10 | 2021-01-19 | 云谷(固安)科技有限公司 | 一种蒸镀装置、蒸镀方法、混合层和显示面板 |
| CN114423881A (zh) * | 2019-09-19 | 2022-04-29 | 应用材料公司 | 蒸发源、遮板装置和蒸发方法 |
| JP7503398B2 (ja) * | 2020-03-04 | 2024-06-20 | 株式会社アルバック | 真空成膜装置用の部品 |
| CN114645249A (zh) * | 2020-12-21 | 2022-06-21 | 应用材料公司 | 在基板上沉积已蒸发源材料的方法和沉积设备 |
| KR102649397B1 (ko) | 2021-08-03 | 2024-03-21 | 엘지전자 주식회사 | 선형 증발원 |
| JP7794643B2 (ja) * | 2022-01-12 | 2026-01-06 | 株式会社ジャパンディスプレイ | 蒸着装置及び蒸着方法 |
| WO2025125882A1 (en) * | 2023-12-15 | 2025-06-19 | Applied Materials, Inc. | Evaporation source and method of coating a substrate |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS648267A (en) * | 1987-06-30 | 1989-01-12 | Sharp Kk | Thin film forming device |
| JP2009228091A (ja) * | 2008-03-25 | 2009-10-08 | Canon Inc | 蒸着装置 |
| JP5247239B2 (ja) * | 2008-05-22 | 2013-07-24 | 日立造船株式会社 | 真空蒸着装置の放出部構造 |
| KR20110014442A (ko) * | 2009-08-05 | 2011-02-11 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101193192B1 (ko) * | 2009-09-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치 |
| KR101182265B1 (ko) | 2009-12-22 | 2012-09-12 | 삼성디스플레이 주식회사 | 증발원 및 이를 포함하는 증착 장치 |
| KR101558519B1 (ko) * | 2010-09-15 | 2015-10-08 | 삼성디스플레이 주식회사 | 유기물 증착 장치 및 증착 방법 |
| WO2012124524A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 蒸着粒子射出装置および蒸着装置 |
| KR20140006499A (ko) | 2012-07-05 | 2014-01-16 | 삼성디스플레이 주식회사 | 증착 장치 |
| KR20140025795A (ko) * | 2012-08-22 | 2014-03-05 | 에스엔유 프리시젼 주식회사 | 선택적 선형 증발 장치 |
| CN104099571A (zh) * | 2013-04-01 | 2014-10-15 | 上海和辉光电有限公司 | 蒸发源组件和薄膜沉积装置和薄膜沉积方法 |
| US20170081755A1 (en) * | 2014-03-21 | 2017-03-23 | Jose Manuel Dieguez-Campo | Evaporation source for organic material |
-
2016
- 2016-05-10 JP JP2017557363A patent/JP6941564B2/ja active Active
- 2016-05-10 WO PCT/EP2016/060439 patent/WO2017194097A1/en not_active Ceased
- 2016-05-10 CN CN202210614575.7A patent/CN115074662A/zh active Pending
- 2016-05-10 KR KR1020177034319A patent/KR102058612B1/ko active Active
- 2016-05-10 CN CN201680027463.4A patent/CN107592889A/zh active Pending
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- 2017-05-02 TW TW106114450A patent/TWI638899B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN115074662A (zh) | 2022-09-20 |
| CN107592889A (zh) | 2018-01-16 |
| TW201809322A (zh) | 2018-03-16 |
| KR102058612B1 (ko) | 2019-12-23 |
| JP2018521216A (ja) | 2018-08-02 |
| KR20180116129A (ko) | 2018-10-24 |
| TWI638899B (zh) | 2018-10-21 |
| WO2017194097A1 (en) | 2017-11-16 |
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