JP6942016B2 - Spatial light modulator and display device - Google Patents

Description

The present invention relates to spatial light modulators and display devices.

The spatial light modulator uses an optical element (optical modulation element) as a pixel and arranges the optical elements (optical modulation elements) in a matrix in two dimensions to spatially modulate the phase and amplitude of light. Spatial light modulators are widely used in fields such as exposure devices such as holographic devices, display technology, and recording technology. Further, since the spatial light modulator can process optical information in parallel in two dimensions, its application to optical information processing technology is also being studied.

As an example of a spatial light modulator, a display device using polarized light of a liquid crystal is widely known. On the other hand, for holography and optical information processing, there is a problem that the response speed and the high definition of pixels are insufficient. Therefore, in recent years, the development of a magneto-optical spatial light modulator using a magneto-optical material, which is expected to have high-speed processing and the possibility of pixel miniaturization, has been promoted.

The magneto-optical spatial light modulator utilizes the effect of changing the direction of polarization (optical rotation) when light incident on a magneto-optical material, that is, a magnetic material, is transmitted or reflected. This effect is called the Faraday effect when it penetrates the magnetic material, and the Kerr effect when it reflects off the magnetic material.

For example, in Patent Document 1, the magnetization direction of the light modulation element in the selected pixel (selected pixel) and the magnetization direction of the light modulation element in the other pixels (non-selected pixel) are changed, and the light emitted from the selected pixel is changed. A magneto-optical light modulator that causes a difference in the rotation angle (optical rotation angle) of its polarized light with the light emitted from the non-selective pixel is described.

As a method of changing the magnetization direction of such a magneto-optical light modulator, a magnetic field application method in which a magnetic field is applied to the light modulation element or a spin injection method in which electron spins are injected by supplying a current to the light modulation element. (For example, Patent Document 1) is known.

Japanese Patent No. 4829850

The magnetic field application type and spin injection type spatial light modulators utilize the difference in the magnetization direction of the ferromagnet to produce a difference in the rotation angle of the deflection of the transmitted or reflected light. However, in principle, the magnetization direction of the ferromagnet can be selected only in two directions, upward and downward, and only pixel selection or non-selection (ON / OFF), that is, binary information can be displayed. Therefore, it has been difficult for a magneto-optical spatial light modulator that utilizes the magnetization direction of a ferromagnet to display gradation.

Even with a magneto-optical spatial light modulator, it is possible to display the gradation itself by using, for example, an area gradation method or a time division multiplexing method. However, as one method of the area gradation method, there is a method of displaying the gradation in a pseudo manner by the number of selected or non-selected elements in a predetermined area. In this case, a predetermined area is treated as one pixel, and the resolution and brightness of the image are lowered. On the other hand, in order to realize the area gradation method while maintaining the resolution, the pixels are divided into fine sub-pixels. In this case, it becomes difficult to form sub-pixels with miniaturization, and the aperture ratio decreases, resulting in a further decrease in brightness.
Further, in the time division multiplexing method, gradation is displayed by controlling the time for displaying an image within a frame at regular time intervals. However, when trying to display high gradation by the time division multiplexing method, the time of one frame becomes long, and it becomes difficult to display an image in real time.

The present invention has been made in view of the above problems, and an object of the present invention is to provide an optical modulation element capable of performing modulation having gradation.

The present inventors have stated that the shape of the hysteresis loop of the ferromagnetic ferroelectric material (hereinafter, sometimes referred to as “multiferroic material”) is gentle as compared with the shape of the hysteresis loop of the ferromagnetic material. I paid attention to. Then, they have found that it is possible to perform modulation having gradation by utilizing the difference in the shape of the hysteresis loop.
That is, the present invention provides the following means for solving the above problems.

(1) The spatial light modulator according to the first aspect includes a transparent first electrode arranged on the incident surface side where light is incident, a second electrode facing the first electrode, the first electrode, and the first electrode. An optical modulation element having a ferromagnetic strong dielectric layer sandwiched between the second electrodes is electrically connected to the optical modulation element, and the magnetization of the ferromagnetic strong dielectric layer in the optical modulation element is A pixel selection means that controls the orientation for each predetermined pixel, an additional capacitance body that is connected to one or both of the first electrode and the second electrode of the optical modulation element and can store electric charges, and the additional capacitance body. It is provided with a control unit that is electrically connected and controls the amount of electric charge accumulated in the additional capacitance body.

(2) In the spatial light modulator according to the above aspect, a first polarization means for polarizing the light incident on the light modulation element may be further provided.

(3) In the spatial light modulator according to the above aspect, the ferromagnetic ferroelectric layer may not be separated for each predetermined pixel.

(4) In the spatial light modulator according to the above aspect, even if the control unit includes a potential control unit that sets a potential difference applied to the additional capacitance body and controls the amount of electric charge accumulated in the additional capacitance body. good.

(5) In the spatial light modulator according to the above aspect, the control unit includes a time control unit that sets a time for applying a voltage to the additional capacitance body and controls an amount of electric charge accumulated in the additional capacitance body. You may.

(6) The display device according to the second aspect includes the spatial light modulator according to the above aspect.

According to the light modulation element and the spatial light modulator according to one aspect of the present invention, modulation having gradation can be performed.

It is sectional drawing of the spatial light modulator which concerns on 1st Embodiment. It is a figure which showed typically the circuit structure of the spatial light modulator which concerns on 1st Embodiment. It is a figure which shows the hysteresis curve of the ferromagnetic ferroelectric layer which shows the multiferroic characteristic. It is a schematic diagram for demonstrating the operation of the spatial light modulator which concerns on 1st Embodiment. It is sectional drawing of another example of the spatial light modulator which concerns on 2nd Embodiment. It is a figure which showed typically the circuit structure of the spatial light modulator which concerns on 2nd Embodiment.

Hereinafter, the present invention will be described in detail with reference to the drawings as appropriate. The drawings used in the following description may be enlarged for convenience in order to make the features of the present invention easy to understand, and the dimensional ratios of the respective components may differ from the actual ones. be. The materials, dimensions, etc. exemplified in the following description are examples, and the present invention is not limited thereto, and the present invention can be appropriately modified without changing the gist thereof. Further, in each drawing used for explanation, the same reference numerals are given to common components.

(First Embodiment)
FIG. 1 is a schematic cross-sectional view of the spatial light modulator according to the first embodiment. The spatial light modulator 100 according to the first embodiment includes a light modulation element 10, a pixel selection means 20, an additional capacitance body 50, and a control unit 60. The spatial light modulator 100 is driven by an external power source 40 connected to the outside and polarizes the light emitted by the first polarizing means 30 (see FIG. 4).

The light modulation element 10 is an element that utilizes the magneto-optical effect. The light modulation element 10 shown in FIG. 1 has a first electrode 1, a second electrode 2, and a ferromagnetic ferroelectric layer 3.

The first electrode 1 is arranged on the incident surface side of the light incident on the ferromagnetic ferroelectric layer 3. The first electrode 1 is a transparent electrode that is transparent to the extent that the incident light reaches the ferromagnetic ferroelectric layer 3.

Examples of the transparent electrode material used for the first electrode 1 include indium zinc oxide (IZO), indium tin oxide (ITO), tin oxide (SnO ₂ ), and antimony-doped oxidation. Tin (ATO), zinc oxide (ZnO), fluorine-doped tin oxide (FTO), indium oxide (In ₂ O ₃ ), indium-gallium-zinc oxide (Indium Gallium Zinc Oxide: IGZO) and the like can be used. Graphene, carbon nanotubes and the like can also be applied as transparent electrode materials. Further, if the incident light reaches the ferromagnetic ferroelectric layer 3, a thin metal layer or the like can also be used as the transparent electrode material.

A plurality of second electrodes 2 are provided so as to face the first electrode 1. By applying a voltage between the first electrode 1 and the second electrode 2, the spin direction of the ferromagnetic ferroelectric layer 3 changes.
The region sandwiched between the second electrode 2 and the first electrode 1 and affected by the electric field between the second electrode 2 and the first electrode 1 becomes one pixel.

The material of the second electrode 2 is not particularly limited as long as it has conductivity. For example, in addition to the material used for the first electrode, copper, aluminum, silver or the like can be used.

The ferromagnetic ferroelectric layer 3 extends uniformly in the plane. That is, it is not separated for each pixel of the spatial light modulator 100. Depending on the application, the ferromagnetic ferroelectric layer 3 may be divided for each pixel as a modification.

The ferromagnetic ferroelectric layer 3 contains a multiferroic material. A multiferroic material is a material in which "magnetic order" and "ferroelectric order" coexist. That is, it is a material having both ferromagnetism and ferroelectricity. Since the ferromagnetic ferroelectric layer 3 contains a multiferroic material, it is possible to control the direction of magnetization by an electric field and the direction of electric polarization by a magnetic field.

As the multiferroic material, a substance represented by the following general formula (1) can be used.
_{(A w B x C 1-} w-x) s (L y M z N 1-y _{over z) t O u ··· (1} )
In the general formula (1), A, B and C are elements of any one of Bi, La, Tb, Pb, Y, Cr, Co, Ba, Lu, Yb or Eu, respectively.
In the general formula (1), L, M and N are elements of Fe, Mn, Ni, Ti, Cr, Co or V, respectively.
In the general formula (1), w, x, y and z are real numbers 0 to 1, and w + x and y + z do not exceed 1.
In the general formula (1), s is an integer of 1 to 3, t is an integer of 1 to 3, and n is an integer of 3 to 6.

Specific examples satisfying the general formula (1), for _{example, BiMnO 3, TbMnO 3, TbMn} 2 O 5, YMnO 3, EuTiO 3, CoCr 2 O 4, Cr 2 O 3, BiMn 0.5 Ni 0. ₅ O ₃ , BiFe _0.5 Cr _0.5 O ₃ , La _0.1 Bo _0.9 MnO ₃ , La _1-x Bi _x Ni _0.5 Mn _0.5 O ₃ , Bi _1-x Ba _x FeO _{, (Bi w Ba x La 1} -w-x) s (Fe y Mn 1-y) t O u, (Bi w Ba x La 1-w-x) s (Fe y Mn z Ti 1-y _{over z} ) _t O _u, and the like.

The pixel selection means 20 shown in FIG. 1 is a MOS-FET. The pixel selection means 20 includes a semiconductor substrate 21, a gate electrode 23, a source electrode 24, a drain electrode 27, and insulators 25 and 26.

For the semiconductor substrate 21, for example, silicon or the like can be used. The pixel selection means 20 shown in FIG. 1 has a source region 22a and a drain region 22b in which an n-type dopant is doped in a part of a semiconductor substrate 21 to which a p-type dopant is added.

The gate electrode 23 is arranged via the semiconductor substrate 21 and the insulator 25. By applying a voltage to the gate electrode 23, a channel is formed between the source region 22a and the drain region 22b.

The source electrode 24 connects the external power source 40 and the source region 22a. The drain electrode 27 connects the drain region 22b and the second electrode 2.

The insulator 25 and the insulator 26 are arranged between the second electrode 2, the semiconductor substrate 21, the gate electrode 23, and the source electrode 24, and insulate them from each other. Although overlapping in the figure, the drain electrode 27 is also insulated from the gate electrode 23 and the source electrode 24.

The additional capacitance body 50 is connected to the surface of the second electrode 2 opposite to the ferromagnetic ferroelectric layer 3. The surface of the additional capacitance body 50 opposite to the second electrode 2 is connected to the third electrode 51. The third electrode 51 is connected to the first electrode 1 by a via 53. That is, in FIG. 1, the current from the drain electrode 27 to the second electrode 2 branches to the additional capacitance body 50 side and the ferromagnetic ferroelectric layer 3 side. That is, the additional capacitance body 50 and the ferromagnetic ferroelectric layer 3 are connected in parallel to the second electrode 2 of the light modulation element 10. Further, in the portion other than the additional capacitance body 50, the second electrode 2 and the third electrode 51 are insulated by the insulator 26.

Insulators and dielectric materials can be used for the additional capacitance body 50. For example, SiO ₂ (silicon oxide), SiN (silicon nitride), High-k materials Ta ₂ O ₅ (tantalum oxide), HfO ₂ (hafnium oxide), Y ₂ O ₃ (yttrium oxide), TiO ₂ (oxidation). Titanium), HfAlON (nitrogen-added hafnium aluminate) and the like can be used.

Among these substances, it is preferable to use a substance having a high dielectric constant as the additional capacitance body 50. For example, the dielectric constant is preferably 5 F / m or more, more preferably 10 F / m or more, and even more preferably 25 F / m or more. The additional capacitance body 50 made of a material having a high dielectric constant can accumulate a large amount of electric charges and can display high gradation.

The control unit 60 is electrically connected in series with the external power supply 40.
The control unit 60 controls the amount of electric charge accumulated in the additional capacitance body 50. The amount of electric charge accumulated in the additional capacitance body 50 may be controlled by the potential difference given to the additional capacitance body 50, or may be controlled by the time for giving the potential difference to the additional capacitance body 50. For example, when controlling by a potential difference, a potential control unit is provided in the control unit 60. Further, for example, in the case of controlling by time, a time control unit is provided in the control unit 60. The control unit 60 may include both a potential control unit and a time control unit.

As the external power supply 40, a known power supply can be used. The external power supply 40 is connected to the light modulation element 10 and the pixel selection means 20 via the selection element 41.

The spatial light modulator 100 can be manufactured using a known method. For example, a film forming means such as sputtering, photolithography, or the like can be used.

Next, the electrical operation of the spatial light modulator 100 will be described with reference to FIGS. 1 and 2. FIG. 2 is a diagram schematically showing a circuit configuration of the spatial light modulator according to the first embodiment.

In the ferromagnetic ferroelectric layer 3, the region sandwiched between the first electrode 1 and the second electrode 2 forms one pixel R (see FIG. 1). In FIG. 2, a plurality of pixels R are arranged two-dimensionally. Each pixel R is provided with one pixel selection element 20A. A collection of a plurality of pixel selection elements 20A corresponds to the pixel selection means 20 in FIG.

The source electrode 24 of one pixel selection element 20A is connected to the source line SL, and the gate electrode 23 is connected to the gate line GL. Further, as described above, the drain electrode 27 is connected to the second electrode 2.

The current flowing through the source line SL is controlled by the selection element 41. The current flowing through the gate line GL is controlled by the second selection element 42.

A case where a voltage is applied to an arbitrary pixel R will be specifically described as an example.
First, the source line SL to which the voltage is applied is selected by the selection element 41. A voltage is applied from the external power source 40 to each of the source electrodes 24 connected to the selected source line SL.

Next, the gate line GL to which the voltage is applied is selected by the second selection element 42. By applying a voltage to the gate electrode 23 connected to the selected gate line GL, a channel is formed on the semiconductor substrate 21 facing the gate electrode 23. Once the channel is formed, the source region 22a and the drain region 22b are connected.

That is, in the pixel selection element 20A located at the intersection of the selected source line SL and the gate line GL, the voltage applied from the external power source 40 is applied to the second electrode 2 via the channel. As a result, a potential difference is generated between the first electrode 1 and the second electrode 2, and a voltage is applied to the ferromagnetic ferroelectric layer 3 in the selected pixel R.

Further, the control unit 60 controls the amount of electric charge accumulated in the additional capacitance body 50 between the second electrode 2 and the third electrode 51.

Next, the operation of the spatial light modulator in which spatial light modulation occurs will be described. FIG. 3 is a diagram showing a hysteresis curve of the ferromagnetic ferroelectric layer 3 exhibiting multiferroic characteristics. The horizontal axis is the applied electric field E or magnetic field H, and the vertical axis is the magnitude of the magnetization M generated by the electric field E or the magnitude of the polarization P generated by the magnetic field H.

As shown in FIG. 3, the ferromagnetic ferroelectric layer 3 having a multiferroic characteristic has a gentle hysteresis loop. Therefore, the magnitude of magnetization when the voltage Ea is applied to the ferromagnetic ferroelectric layer 3 is Ma, but the magnitude of magnetization when the voltage Eb is applied is Mb. The magnitude of magnetization when no voltage is applied is Mc. That is, the magnitude of magnetization of the ferromagnetic ferroelectric layer 3 changes stepwise depending on the magnitude of the electric field applied to the ferromagnetic ferroelectric layer 3. In FIG. 3, the magnetization when a predetermined voltage is applied can be stochastically selected from two states, but one state can be obtained by saturating the magnetization of the ferromagnetic ferroelectric layer 3 in one direction as an initial state. Is fixed to.

FIG. 4 is a schematic diagram for explaining the operation of the spatial light modulator according to the first embodiment. The pixel selection means 20 can select which pixel R to apply the voltage to, and the control unit 60 controls the amount of electric charge stored in the additional capacitance body 50. For example, the pixel selection means 20 selects the selection pixels R1 and R2 to which the voltage is applied, and the control unit 60 controls the charges accumulated in the additional capacitance bodies 50A and 50B of the selection pixels R1 and R2. FIG. 4 illustrates a case where the amount of electric charge stored in the additional capacitance body 50A is larger than the amount of electric charge stored in the additional capacitance body 50B.

The ferromagnetic ferroelectric layer 3 in the vicinity of the selected pixels R1 and R2 is polarized by the applied voltage. The intensity of the voltage applied to the selected pixels R1 and R2 differs depending on the amount of electric charge accumulated in the additional capacitance bodies 50A and 50B. This is because the electric charge accumulated in the additional capacitance bodies 50A and 50B affects the electric field in the selected pixels R1 and R2.

As described above, in FIG. 4, the amount of electric charge accumulated in the additional capacitance body 50A is larger than the amount of electric charge accumulated in the additional capacitance body 50B. That is, the voltage applied to the selected pixel R1 (for example, the voltage Ea in FIG. 3) is larger than the voltage applied to the selected pixel R2 (for example, the voltage Eb in FIG. 3). As a result, the polarizability of the polarization P1 induced in the selected pixel R1 is larger than the polarizability of the polarization P2 induced in the selected pixel R2.

On the other hand, the magnetizations M1 and M2 in the ferromagnetic ferroelectric layer 3 near the selected pixels R1 and R2 are affected by the polarizations P1 and P2, and the magnetization direction changes. The magnitudes of the magnetizations M1 and M2 in the selected pixels R1 and R2 are Ma and Mb, respectively (see FIG. 3).

On the other hand, no voltage is applied to the non-selected pixels R3 other than the selected pixels R1 and R2. Therefore, the non-selective pixel R3 is hardly polarized, and the polarizability of the polarized P3 is small. Further, since no voltage is applied to the non-selective pixel R3, the magnitude of the magnetization M3 in the non-selective pixel R3 is Mc (see FIG. 3).

Light is applied to the light modulation element 10 having a plurality of pixels whose magnetization directions are determined.
The light L1 emitted from the light irradiating means 31 becomes polarized light L2 polarized in a specific direction by the first polarizing means 30. The polarized light L2 passes through the first electrode 1 of the light modulation element 10 and is reflected or diffracted by the ferromagnetic ferroelectric layer 3. When reflected or diffracted, the polarized light L2 is rotated by the magneto-optical Kerr effect according to the direction of magnetization of the pixel. The angle of rotation of the optical rotation depends on the magnitude of magnetization of each pixel R.

The polarized light L2 reflected or diffracted by the selected pixel R1 _{becomes the optical rotation L3 whose car rotation angle is rotated by −θ kmax,} and the polarized light L2 reflected or diffracted by the selected pixel R2 is the optical rotation _{whose car rotation angle is rotated by −θ k1.} The light L4 becomes the light L4, and the polarized light L2 reflected or diffracted by the non-selective pixel R3 becomes the optical rotation L5 _{whose car rotation angle is rotated by −θ k0.}

For example, if a second polarizing means 32 having a polarization setting of 90 ° with respect to any of the optical rotations L3, L4, and L5 is provided on the exit side of the optical rotations L3, L4, and L5, after passing through the second polarizing means 32. The brightness of the light varies depending on the car rotation angle of the optical rotations L3, L4, and L5. The brightness of the light after passing through the second polarization means 32 becomes brighter in descending order of the car rotation angle, so that the order is the optical rotation L3, the optical rotation L4, and the optical rotation L5. That is, the brightness of the light emitted from the spatial light modulator 100 can be made multi-valued.

Further, when these optical rotations L3, L4, and L5 are interfered with each other, a holographic image or the like can be obtained. A spatial light modulator can also be used as a display device by using such a modulated image or a holographic image.

As described above, the spatial light modulator 100 according to the first embodiment can control the amount of electric charge accumulated in the additional capacitance body 50 by the control unit 60 and change the voltage applied to each pixel R. Further, since the ferromagnetic ferroelectric layer 3 has a gentle hysteresis loop, the brightness of the light emitted from the spatial light modulator 100 is displayed in gradation for each voltage applied to the ferromagnetic ferroelectric layer 3. be able to.

Further, the ferromagnetic ferroelectric layer 3 is not separated for each pixel R. Therefore, the size of the pixel R can be freely controlled by the applied voltage strength. That is, a more seamless display image can be obtained. Further, a black matrix or the like for partitioning the pixels R is unnecessary, and a high opening ratio can be realized. That is, a high-definition and high-luminance holographic image can be obtained.

(Second embodiment)
Next, the spatial light modulator according to the second embodiment will be described.
FIG. 5 is a schematic cross-sectional view of the spatial light modulator according to the second embodiment. FIG. 6 is a diagram schematically showing a circuit configuration of the spatial light modulator according to the second embodiment.

As shown in FIGS. 5 and 6, in the spatial light modulator 101 according to the second embodiment, the point that the additional capacitance body 50 is connected in series with the light modulation element 10 is the spatial light according to the first embodiment. Different from modulator 100.

As shown in FIG. 5, in the spatial light modulator 101 according to the third embodiment, the additional capacitance body 50 is arranged between the drain electrode 27 and the second electrode 2. Since they are arranged in series, the voltage applied to the ferromagnetic ferroelectric layer 3 is reduced by the voltage applied to the additional capacitance body 50.

Assuming that the capacitance of the ferromagnetic ferroelectric layer 3 is C ₁ and the capacitance of the additional capacitance _{layer is C 2 , the voltage V 1} applied to the ferromagnetic ferroelectric layer 3 is V ₁ = E ₁ / (1 + C ₁ / C _2). ). Here, E ₁ is a voltage applied by the external power supply 40. That is, the voltage applied to the ferromagnetic ferroelectric layer 3 can be changed by changing the amount of electric charge accumulated in the additional capacitance body 50. Therefore, according to the spatial light modulator 102 according to the second embodiment, the brightness of the emitted light can be displayed in gradation.

Although the embodiments of the present invention have been described in detail with reference to the drawings, the configurations and combinations thereof in the respective embodiments are examples, and the configurations are added or omitted within the range not deviating from the gist of the present invention. , Replacements, and other changes are possible.

For example, the spatial light modulator according to the above embodiment is a reflective type, but may be a transmissive type spatial light modulator. In the transmissive spatial light modulator, the optical rotation of each pixel changes due to the Faraday effect. A transparent second electrode and substrate are used. As the transparent electrode, the same electrode as that of the first electrode according to the first embodiment can be used, and as the transparent substrate, a SiO ₂ substrate, an MgO substrate, a sapphire substrate, or the like can be used.

Further, the spatial light modulator according to the above embodiment has an active matrix structure in which the pixel selection means has a MOSFET structure. However, the pixel selection means is not limited to the active matrix structure, and may be a simple matrix structure.

1 ... 1st electrode, 2 ... 2nd electrode, 3 ... ferromagnetic strong dielectric layer, 10 ... optical modulation element, 20 ... pixel selection means, 20A ... pixel selection element, 21 ... semiconductor substrate, 22a ... source region, 22b ... Drain region, 23 ... Gate electrode, 24 ... Source electrode, 25, 26 ... Insulator, 27 ... Drain electrode, 30 ... First polarizing means, 31 ... Light irradiation means, 32 ... Second polarizing means, 40 ... External power supply , 41 ... Selective element, 42 ... Second select element, 50 ... Additional capacitance, 51 ... Third electrode, 52 ... Insulator, 53 ... Via, 60 ... Control unit, 100, 101 ... Spatial light modulator, R ... Pixels, R1, R2 ... Selected pixels, R3 ... Non-selected pixels, L1 ... Light, L2 ... Polarized light, L3, L4, L5 ... Rotating light, M1, M2, M3 ... Dielectric, P1, P2, P3 ... Polarized

Claims (6)

A multiferroic material is sandwiched between a transparent first electrode arranged on the incident surface side where light is incident, a second electrode facing the first electrode, and the first electrode and the second electrode. An optical modulator having a ferromagnetic ferroelectric layer, including
A pixel selection means that is electrically connected to the light modulation element and controls the direction of magnetization of the ferromagnetic ferroelectric layer in the light modulation element for each predetermined pixel.
An additional capacitive body connected to one or both of the first electrode and the second electrode of the light modulation element and capable of accumulating charges.
A spatial light modulator comprising a control unit that is electrically connected to the additional capacitance body and controls the amount of electric charge accumulated in the additional capacitance body. The spatial light modulator according to claim 1, further comprising a first polarization means for polarizing the light incident on the light modulation element. The spatial light modulator according to claim 1 or 2, wherein the ferromagnetic ferroelectric layer is not separated for each predetermined pixel. The space according to any one of claims 1 to 3, wherein the control unit includes a potential control unit that sets a potential difference applied to the additional capacitance body and controls the amount of electric charge accumulated in the additional capacitance body. Optical modulator. The invention according to any one of claims 1 to 4, wherein the control unit includes a time control unit that sets a time for applying a voltage to the additional capacitance body and controls the amount of electric charge accumulated in the additional capacitance body. Spatial light modulator. A display device including the spatial light modulator according to any one of claims 1 to 5.

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