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JP6945841B2 - Near-infrared absorption squarylium derivatives and organic electronic devices containing them - Google Patents
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JP6945841B2 - Near-infrared absorption squarylium derivatives and organic electronic devices containing them - Google Patents

Near-infrared absorption squarylium derivatives and organic electronic devices containing them Download PDF

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JP6945841B2
JP6945841B2 JP2017119231A JP2017119231A JP6945841B2 JP 6945841 B2 JP6945841 B2 JP 6945841B2 JP 2017119231 A JP2017119231 A JP 2017119231A JP 2017119231 A JP2017119231 A JP 2017119231A JP 6945841 B2 JP6945841 B2 JP 6945841B2
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城戸 淳二
淳二 城戸
久宏 笹部
久宏 笹部
健志 佐野
健志 佐野
祐弥 林
祐弥 林
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Yamagata University NUC
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本発明は、新規な近赤外吸収スクアリリウム誘導体、及びそれを含む有機電子デバイスに関する。 The present invention relates to a novel near-infrared absorbing squarylium derivative and an organic electronic device containing the same.

近年、有機太陽電池等の有機電子デバイスは、軽量で自由に曲げられるという特徴をもち、製造コスト面でも有利であることから、シリコン系無機太陽電池に代わって、実用化・市場投入段階に入りつつある。有機太陽電池デバイスには蒸着型及び塗布型があるが、特に塗布型の有機薄膜太陽電池は、蒸着型の有機薄膜太陽電池に比べて製造コストが安く、大量生産に向いている。しかしながら、有機薄膜太陽電池は、その光電エネルギー変換効率が10%程度であり、シリコン系無機太陽電池と比較して、効率や信頼性の点で未だ改善の余地があり、盛んに研究開発が行われている。 In recent years, organic electronic devices such as organic solar cells have the characteristics of being lightweight and freely bendable, and are also advantageous in terms of manufacturing cost. Therefore, they have entered the stage of commercialization and market launch in place of silicon-based inorganic solar cells. It's getting better. There are two types of organic solar cell devices, a vapor deposition type and a coating type. In particular, a coating type organic thin film solar cell has a lower manufacturing cost than a vapor deposition type organic thin film solar cell and is suitable for mass production. However, the photoelectric energy conversion efficiency of organic thin-film solar cells is about 10%, and there is still room for improvement in terms of efficiency and reliability compared to silicon-based inorganic solar cells, and active research and development is being carried out. It has been.

太陽光は、そのエネルギーの50%以上を、650nmより長波長の近赤外・赤外領域に持つ。そのため、光電変換効率の飛躍的な向上には、この波長領域を効率良く吸収し、電気エネルギーとして取り出すことが必須である。モル吸光係数の高い近赤外領域吸収材料は、透明太陽電池やセンサー等に応用可能であるが、有機、無機ともに、極めて少なく、これまでのところ、有機太陽電池デバイスはドナー材料とアクセプター材料とを併用して作製されている。一般にアクセプター材料で用いられているフラーレン誘導体は逆電子移動が遅く、対称性が高いという利点があるが、これらは近赤外領域付近に強い吸収を持たないため、有機太陽電池デバイスの高効率化には、長波長領域の吸収を持つドナー材料の開発が非常に重要となる。また、有機太陽電池デバイスの高効率化には、ドナー材料と、アクセプター材料とのエネルギー準位の関係が重要である。ドナー材料で太陽光を吸収して発生した励起子(エキシトン)からアクセプター材料に電荷移動させるには、一般にドナー材料の最低非占有分子軌道(lowest unoccupied molecular orbital:LUMO)準位がアクセプター材料のLUMO準位よりも0.3eV以上浅いことが好ましいとされている。塗布型有機薄膜太陽電池では、アクセプター材料として、通常溶解性が高いフェニルC71酪酸メチル(PC71BM)が使用される。PC71BMのLUMO準位は4.0eVであるから、ドナー材料には3.7eV程度のLUMO準位が求められる。 Sunlight has 50% or more of its energy in the near-infrared / infrared region having a wavelength longer than 650 nm. Therefore, in order to dramatically improve the photoelectric conversion efficiency, it is essential to efficiently absorb this wavelength region and extract it as electrical energy. Near-infrared absorption materials with a high molar extinction coefficient can be applied to transparent solar cells, sensors, etc., but both organic and inorganic are extremely few. So far, organic solar cell devices have been used as donor materials and acceptor materials. Is manufactured in combination with. Fullerene derivatives generally used as acceptor materials have the advantages of slow electron transfer and high symmetry, but they do not have strong absorption near the near-infrared region, which improves the efficiency of organic solar cell devices. For this, the development of donor materials with absorption in the long wavelength region is very important. In addition, the relationship between the energy level of the donor material and the acceptor material is important for improving the efficiency of the organic solar cell device. In order to transfer charge from excitons generated by absorbing sunlight in the donor material to the acceptor material, the lowest unoccupied molecular orbital (LUMO) level of the donor material is generally the LUMO of the acceptor material. It is said that it is preferable that the level is 0.3 eV or more shallower than the level. In a coating type organic thin film solar cell, methyl phenyl C71 butyrate (PC 71 BM), which has high solubility, is usually used as an acceptor material. Since the LUMO level of PC 71 BM is 4.0 eV, the LUMO level of about 3.7 eV is required for the donor material.

塗布型有機薄膜太陽電池に使用されるドナー材料は、当然ながら、溶媒によく溶ける必要がある。ドナー材料は大きく分けて高分子型と低分子型の2つが知られている。高分子型材料は変換効率が8%程度まで効率が向上しているが、高分子型材料は、精製が難しく、高純度化が困難で、製造ロット間の特性変化が大きく品質を保つことが難しい。一方、低分子型材料は、分子量分布を持たず、精製が容易で信頼性が高い、又は、製造ロット間の品質が変わらず、ロットによりエネルギー変換効率に影響を与えない等の特徴を持つ。しかしながら、低分子型材料は、現時点で移動度も10-5cm2/Vs程度と低く、エネルギー変換効率も7%以下に留まっている。また、低分子型材料のうち、高効率を達成している材料は、一般に溶解性が低く、塗布型有機薄膜太陽電池を作製する際に、オルトジクロロベンゼン(ODCB)、クロロホルム等、ハロゲン系の溶媒を使用しなければならず、環境面で問題がある。そのため、塗布型有機薄膜太陽電池の高性能化と実用性向上には、近赤外光の吸収能と高い移動度を持ち、非ハロゲン系の溶媒等にも高い溶解性を示す新しい低分子材料の開発が求められている。 The donor material used in coated organic thin-film solar cells, of course, needs to be well soluble in solvents. There are roughly two known donor materials, a high molecular type and a low molecular type. The efficiency of polymer-type materials has improved to about 8%, but polymer-type materials are difficult to purify, difficult to purify, and the characteristics change greatly between production lots to maintain quality. difficult. On the other hand, the low molecular weight material has features such as no molecular weight distribution, easy purification and high reliability, or the quality does not change between production lots and the energy conversion efficiency is not affected by lots. However, the mobility of low molecular weight materials is as low as about 10-5 cm 2 / Vs at present, and the energy conversion efficiency is only 7% or less. In addition, among low molecular weight materials, materials that have achieved high efficiency generally have low solubility, and when producing a coating type organic thin-film solar cell, halogen-based materials such as orthodichlorobenzene (ODCB) and chloroform are used. Solvents must be used, which poses an environmental problem. Therefore, in order to improve the performance and practicality of coated organic thin-film solar cells, a new low-molecular-weight material that has near-infrared light absorption capacity and high mobility and is highly soluble in non-halogen solvents, etc. Development is required.

スクアリリウム誘導体は、非ハロゲン系溶媒に対しても高い溶解性を示し、近赤外領域に強い吸収を持ち、かつ、逆電子移動が遅く、高い対称性を持つ構造であることから、ドナー材料として研究開発が行われており、すでに多数報告されている(非特許文献1〜3)。 The squarylium derivative shows high solubility in non-halogen solvents, has strong absorption in the near infrared region, has slow back electron transfer, and has a structure with high symmetry, so it can be used as a donor material. Research and development have been carried out, and many have already been reported (Non-Patent Documents 1 to 3).

G. Chen, H. Sasabe, Y. Sasaki, H. Katagiri, X.F. Wang, T. Sano, Z. Hong, Y. Yang, and J. Kido, “Chem.Mater.” 2014, 26, 1356-1364.G. Chen, H. Sasabe, Y. Sasaki, H. Katagiri, X.F. Wang, T. Sano, Z. Hong, Y. Yang, and J. Kido, “Chem. Mater.” 2014, 26, 1356-1364. 佐々木、笹部、洪、楊、及び城戸「高分子学会第62回年次大会」、1J28 (2013)Sasaki, Sasabe, Hong, Yang, and Kido "The 62nd Annual Meeting of the Society of Polymer Science, Japan", 1J28 (2013) H. Sasabe, T. Igarashi, Y. Sasaki. G. Chen, Z. Hong, and J. Kido, “RSC Advances” 2014,4, 42804-42807.H. Sasabe, T. Igarashi, Y. Sasaki. G. Chen, Z. Hong, and J. Kido, “RSC Advances” 2014,4, 42804-42807.

スクアリリウム誘導体は、脱水縮合反応により高収率で比較的容易に合成できて環境に優しく、種々の置換基の導入も可能である。スクアリリウム誘導体のうち、SQ−1、YSQ−8、SQ−BPは、塗布成膜によるBHJ(bulk heterojunction)型の素子において、それぞれPCE(power conversion efficiency)が4.0%、3.8%、4.8%を達成している。これらの誘導体のエネルギー変換効率は、以前のものに比べると向上しているが、まだ低い値に留まっている。また、これらのスクアリリウム誘導体を用いた有機太陽電池デバイスは、そのVOC(開放電圧)、JSC(短絡電流密度)の値が他の材料に比べて高いものの、FF(曲線因子)が低いという問題があった。

Figure 0006945841
The squarylium derivative can be synthesized relatively easily in high yield by a dehydration condensation reaction, is environmentally friendly, and various substituents can be introduced. Among the squarylium derivatives, SQ-1, YSQ-8, and SQ-BP have PCE (power conversion efficiency) of 4.0% and 3.8%, respectively, in BHJ (bulk heterojunction) type devices by coating film formation. It has achieved 4.8%. The energy conversion efficiencies of these derivatives are improved compared to their predecessors, but still low. In addition, organic solar cell devices using these squarylium derivatives have higher V OC (open circuit voltage) and J SC (short circuit current density) values than other materials, but have lower FF (curve factor). There was a problem.
Figure 0006945841

前記誘導体のうち、YSQ−8、SQ−BPは、アクセプター材料としてPC70BMを組み合わせるのに適したエネルギー準位になるように設計した分子である。なかでもSQ−BPはその分子構造が左右対称であり、合成の収率が80%以上であり、PCEも4.8%と比較的高い。 Among the derivatives, YSQ-8 and SQ-BP are molecules designed to have energy levels suitable for combining PC 70 BM as an acceptor material. Among them, SQ-BP has a symmetrical molecular structure, the yield of synthesis is 80% or more, and the PCE is relatively high at 4.8%.

そこで、本発明では、高効率な有機電子デバイスを提供するために有用な新規スクアリリウム誘導体を提供すべく、SQ−BPに着目し、その末端置換基を改良して、吸収波長の長波長化を行うことや、エネルギー準位を変化させずに、薄膜状態での移動度を向上させ、さらにFFを改善してエネルギー変換効率を向上させることを課題としている。また、得られたスクアリリウム誘導体からなるドナー材料及びそれを用いた有機電子デバイスを提供することを課題としている。 Therefore, in the present invention, in order to provide a novel squarylium derivative useful for providing a highly efficient organic electronic device, we focus on SQ-BP, improve its terminal substituent, and lengthen the absorption wavelength. The problems are to improve the mobility in the thin film state without changing the energy level, and further improve the FF to improve the energy conversion efficiency. Another object of the present invention is to provide a donor material made of the obtained squarylium derivative and an organic electronic device using the donor material.

本発明は以下の事項からなる。
本発明のスクアリリウム誘導体は、下記一般式(1)で表される。

Figure 0006945841
Figure 0006945841
一般式(1)中、Ar1及びAr 4 は、それぞれ独立に芳香族置換基を表し、Ar2は一般式(2)で表される置換基を表し、Ar 3 は一般式(3)で表される置換基を表し、該一般式(1)〜(3)中、R1〜R32は、それぞれ独立に水素原子、脂肪族置換基又は芳香族置換基を表す。
本発明の有機電子デバイスは、上記スクアリリウム誘導体を含む。 The present invention comprises the following matters.
The squarylium derivative of the present invention is represented by the following general formula (1).
Figure 0006945841
Figure 0006945841
In the general formula (1), Ar 1 and Ar 4 each independently represent an aromatic substituent, Ar 2 represents a substituent represented by the general formula (2), and Ar 3 is represented by the general formula (3). Representing the represented substituents, in the general formulas (1) to (3), R 1 to R 32 independently represent a hydrogen atom, an aliphatic substituent or an aromatic substituent, respectively.
The organic electronic device of the present invention contains the above squarylium derivative.

本発明のスクアリリウム誘導体は、溶液状態で825nm、固体薄膜状態で900〜1000nmに強い吸収帯を持ち、従来のスクアリリウム誘導体(吸収波長 650nm)に比べて、溶液状態で約200nm長波長側に強い吸収を持つことがわかる。このようなスクアリリウム誘導体を近赤外吸収材料として用いれば、可視光に吸収を持たない透明な太陽電池やセンサーを実現することができる。
また、上記スクアリリウム誘導体は脱水縮合により容易に合成することができ、ハロゲン系溶媒に溶解しやすく、溶液塗布法により良好な薄膜形成が可能である。
The squarylium derivative of the present invention has a strong absorption band at 825 nm in the solution state and 900 to 1000 nm in the solid thin film state, and is strongly absorbed on the long wavelength side by about 200 nm in the solution state as compared with the conventional squarylium derivative (absorption wavelength 650 nm). It turns out that it has. By using such a squarylium derivative as a near-infrared absorbing material, it is possible to realize a transparent solar cell or sensor that does not absorb visible light.
Further, the squarylium derivative can be easily synthesized by dehydration condensation, easily dissolved in a halogen-based solvent, and a good thin film can be formed by a solution coating method.

図1はTSQ−1のEI−MASSのスペクトルの測定結果を表す。FIG. 1 shows the measurement result of the spectrum of EI-MASS of TSQ-1. 図2はTSQ−1の1H−NMRスペクトルの測定結果(低磁場側(a)、高磁場側(b))を表す。FIG. 2 shows the measurement results of the 1 H-NMR spectrum of TSQ-1 (low magnetic field side (a), high magnetic field side (b)). 図3(a)はTSQ−1のTGA測定結果を表し、図3(b)はTSQ−1のDSC測定結果を表す。FIG. 3A shows the TGA measurement result of TSQ-1, and FIG. 3B shows the DSC measurement result of TSQ-1. 図4(a)はTSQ−1のクロロホルム溶液のUV−vis吸収スペクトルを表し、図4(b)はTSQ−1単膜のUV−vis吸収スペクトルを表し、図4(c)はTSQ−1/PC71BM混合膜のUV−vis吸収スペクトルを表す。FIG. 4 (a) shows the UV-vis absorption spectrum of the chloroform solution of TSQ-1, FIG. 4 (b) shows the UV-vis absorption spectrum of the TSQ-1 monomembrane, and FIG. 4 (c) shows the TSQ-1. / PC 71 Shows the UV-vis absorption spectrum of the BM mixed film. 図5はTSQ−1のCV測定結果を表す。FIG. 5 shows the CV measurement result of TSQ-1. 図6(a)はTSQ−1単膜の写真を表し、図6(b)はTSQ−1/PC71BM 混合膜の写真を表す。FIG. 6A shows a photograph of the TSQ-1 single film, and FIG. 6B shows a photograph of the TSQ-1 / PC 71 BM mixed film. 図7は、有機太陽電池デバイスの構造を模式的に示した概略断面図である。FIG. 7 is a schematic cross-sectional view schematically showing the structure of the organic solar cell device.

以下、本発明のスクアリリウム誘導体について、詳細に説明する。
[スクアリリウム誘導体]
本発明のスクアリリウム誘導体は、下記一般式(1)で表される

Figure 0006945841
Figure 0006945841
一般式(1)中、Ar1及びAr3は、それぞれ独立に芳香族置換基を表し、Ar2は一般式(2)で表される置換基を表し、Ar4は一般式(3)で表される置換基を表し、該一般式(1)〜(3)中、R1〜R32は、それぞれ独立に水素原子、脂肪族置換基又は芳香族置換基を表す。 Hereinafter, the squarylium derivative of the present invention will be described in detail.
[Squarylium derivative]
The squarylium derivative of the present invention is represented by the following general formula (1).
Figure 0006945841
Figure 0006945841
In the general formula (1), Ar 1 and Ar 3 each independently represent an aromatic substituent, Ar 2 represents a substituent represented by the general formula (2), and Ar 4 is represented by the general formula (3). Representing the represented substituents, in the general formulas (1) to (3), R 1 to R 32 independently represent a hydrogen atom, an aliphatic substituent or an aromatic substituent, respectively.

上記一般式(1)中、Ar1及びAr3はそれぞれ独立に芳香族置換基である。前記芳香族置換基は、芳香族炭化水素基でもよいし、芳香族炭化水素基の一部に窒素原子、酸素原子又は硫黄原子等を含んでいてもよい。
前記芳香族炭化水素基は、単環のアリール基でも、多環(縮合環)芳香族炭化水素基でもよく、前記芳香族炭化水素基における芳香環上の水素原子の一部が、例えば、メチル基、イソプロピル基及びイソブチル基等で置換されていてもよい。
前記芳香族炭化水素基の一部に窒素原子、酸素原子又は硫黄原子等を含む基には、例えば、ジフェニルアミノフェニル基、エーテル基、チオエーテル基、フラニル基、チオフェニル基、ベンゾフラニル基、ベンゾチオフェニル基、ジベンゾフラニル基、ジベンゾチオフェニル基等が挙げられる。
上記芳香族置換基の炭素数は6〜50であることが好ましい。前記炭素数6〜50の芳香族置換基としては、例えば、フェニル基、ビフェニル基、ナフチル基、トリフェニレニル基、ターフェニル基、クオーターフェニル基、アントラセニル、9,9’−スピロビフルオレニル基、ジフェニルアミノフェニル基、及び9,9’−ジメチルフルオレニル基等が挙げられる。これらのうち、フェニル基、トリフェニレニル基、ナフチル基、ビフェニル基、ターフェニル基、クオーターフェニル基、9,9’−スピロビフルオレニル基、ジフェニルアミノフェニル基、及び9,9’−ジメチルフルオレニル基等がより好ましく、フェニル基、2−トリフェニレニル基、2−ナフチル基、ビフェニル−4−イル基、4−(ジフェニルアミノ)フェニル基、2−(9,9’−スピロビフルオレニル)基、及び3−(9,9’−ジメチルフルオレニル)基が特に好ましい。
In the above general formula (1), Ar 1 and Ar 3 are independently aromatic substituents. The aromatic substituent may be an aromatic hydrocarbon group, or may contain a nitrogen atom, an oxygen atom, a sulfur atom, or the like as a part of the aromatic hydrocarbon group.
The aromatic hydrocarbon group may be a monocyclic aryl group or a polycyclic (condensed ring) aromatic hydrocarbon group, and a part of hydrogen atoms on the aromatic ring in the aromatic hydrocarbon group is, for example, methyl. It may be substituted with a group, an isopropyl group, an isobutyl group or the like.
Examples of the group containing a nitrogen atom, an oxygen atom, a sulfur atom or the like as a part of the aromatic hydrocarbon group include a diphenylaminophenyl group, an ether group, a thioether group, a furanyl group, a thiophenyl group, a benzofuranyl group and a benzothiophenyl group. Examples include a group, a dibenzofuranyl group, a dibenzothiophenyl group and the like.
The aromatic substituent preferably has 6 to 50 carbon atoms. Examples of the aromatic substituent having 6 to 50 carbon atoms include a phenyl group, a biphenyl group, a naphthyl group, a triphenylenyl group, a terphenyl group, a quarterphenyl group, anthrasenyl, and a 9,9'-spirobifluorenyl group. Examples thereof include a diphenylaminophenyl group and a 9,9'-dimethylfluorenyl group. Of these, a phenyl group, a triphenylenyl group, a naphthyl group, a biphenyl group, a terphenyl group, a quarterphenyl group, a 9,9'-spirobifluorenyl group, a diphenylaminophenyl group, and a 9,9'-dimethylfluore. Phenyl group and the like are more preferable, and phenyl group, 2-triphenylenyl group, 2-naphthyl group, biphenyl-4-yl group, 4- (diphenylamino) phenyl group, 2- (9,9'-spirobifluorenyl). Groups and 3- (9,9'-dimethylfluorenyl) groups are particularly preferred.

脂肪族置換基は、炭素数1〜50でかつ、直鎖状又は分岐状の脂肪族炭化水素基であるが、好ましくは、炭素数4〜30の分岐状の脂肪族炭化水素基である。
炭素数4〜30の分岐状の脂肪族炭化水素基としては、例えば、t-ブチル基、イソブチル基、2−エチルヘキシル基、2−エチルオクチル基、2−ヘキシルデカニル基、2−オクチルドデカニル基、2−デシルテトラデカニル基等が挙げられる。これらのうち、2−エチルヘキシル基、イソブチル基、及び2−エチルオクチル基、2−ヘキシルデカニル基等がより好ましく、イソブチル基、2−エチルヘキシル基が特に好ましい。
ここで、脂肪族炭化水素基とは、広く芳香族炭化水素基以外の基を指し、環式でも非環式でもよく、また、脂肪族炭化水素基を構成する水素原子の一部が、例えば、アルキル基、アルケニル基、アルキニル基、シクロアルキル基、及びエーテル基等で置換されていてもよい。
なお、R1〜R32は、本発明の効果を損なわない範囲内で、その水素原子の一部が窒素原子、硫黄原子、酸素原子、リン原子若しくはケイ素原子又はこれらを含む置換基で置換されていてもよい。
The aliphatic substituent is a linear or branched aliphatic hydrocarbon group having 1 to 50 carbon atoms, and is preferably a branched aliphatic hydrocarbon group having 4 to 30 carbon atoms.
Examples of the branched aliphatic hydrocarbon group having 4 to 30 carbon atoms include a t-butyl group, an isobutyl group, a 2-ethylhexyl group, a 2-ethyloctyl group, a 2-hexyldecanyl group and a 2-octyldodecanyl group. Examples include a group, a 2-decyltetradecanyl group and the like. Of these, a 2-ethylhexyl group, an isobutyl group, a 2-ethyloctyl group, a 2-hexyldecanyl group and the like are more preferable, and an isobutyl group and a 2-ethylhexyl group are particularly preferable.
Here, the aliphatic hydrocarbon group broadly refers to a group other than an aromatic hydrocarbon group, and may be a ring type or an acyclic type, and a part of hydrogen atoms constituting the aliphatic hydrocarbon group is, for example, , Alkyl group, alkenyl group, alkynyl group, cycloalkyl group, ether group and the like.
In R 1 to R 32 , a part of the hydrogen atom is substituted with a nitrogen atom, a sulfur atom, an oxygen atom, a phosphorus atom or a silicon atom, or a substituent containing these, within a range not impairing the effect of the present invention. You may be.

具体的には、上記一般式(1)で表される化合物は、以下の構造式で表される化合物TSQ−1であることが好ましい。

Figure 0006945841
Specifically, the compound represented by the general formula (1) is preferably the compound TSQ-1 represented by the following structural formula.
Figure 0006945841

上記一般式(1)で表されるスクアリリウム誘導体は、その末端の置換基に芳香族炭化水素基を有することにより、深いHOMO及び近赤外領域における広い吸収を持つことができ、また分岐した脂肪族炭化水素基を有することにより、有機溶媒への溶解性が向上し、例えば、スクアリリウム誘導体の末端の置換基が芳香族基のみである場合や、末端置換基が芳香族基であり、かつ、直鎖状の脂肪族基を有する場合と比較して、近赤外領域におけるモル吸光係数と有機溶媒への溶解性が向上する。
したがって、上記スクアリリウム誘導体は、PC71BM等のフラーレン又はその誘導体からなるアクセプター材料に対するドナー材料として好適に用いることができる。
The squarylium derivative represented by the above general formula (1) can have a wide absorption in the deep HOMO and near-infrared regions by having an aromatic hydrocarbon group as a substituent at the terminal thereof, and also has a branched fat. By having a group hydrocarbon group, the solubility in an organic solvent is improved. For example, when the terminal substituent of the squarylium derivative is only an aromatic group, or the terminal substituent is an aromatic group and Compared with the case of having a linear aliphatic group, the molar extinction coefficient in the near infrared region and the solubility in an organic solvent are improved.
Therefore, the squarylium derivative can be suitably used as a donor material for an acceptor material composed of fullerene such as PC 71 BM or a derivative thereof.

[スクアリリウム誘導体の製造方法]
本発明のスクアリリウム誘導体は、例えば、以下に示す方法により製造することができる。TSQ−1の製造方法を一例に示す。
1−ブロモ−3,5−ジメトキシベンゼンと4−クロロフェニルボロン酸とを、パラジウム(0)触媒(Pd2(dba)3)、トリ(tert−ブチル)ホスフィン(P(tBu)3)、及び炭酸カリウム(K2CO3)の存在下に、鈴木−宮浦カップリング反応を行うことにより、Step 1合成物を得る(Step 1)。次いで、Buchwald−Hartwigカップリングにより、Step 1合成物とジイソブチルアミンとを反応させてStep 2合成物を得た後、脱メチル化し(Step 2及び3)、Step 3合成物と四角酸とを反応させてTSQ−1を良好な収率で合成することができる(Step 4)。得られたTSQ−1は、1H−NMR、EI−MASS、元素分析により同定することができる。
なお、上記一般式(1)で表されるスクアリリウム誘導体は、上記した方法に限られず、種々の公知の方法で製造することができる。
[Manufacturing method of squarylium derivative]
The squarylium derivative of the present invention can be produced, for example, by the method shown below. The manufacturing method of TSQ-1 is shown as an example.
1-Bromo-3,5-dimethoxybenzene and 4-chlorophenylboronic acid were added to the palladium (0) catalyst (Pd 2 (dba) 3 ), tri (tert-butyl) phosphine (P ( t Bu) 3 ), and The Suzuki-Miyaura coupling reaction is carried out in the presence of potassium carbonate (K 2 CO 3) to obtain a Step 1 compound (Step 1). Then, by Buchwald-Hartwig coupling, Step 1 synthesis and diisobutylamine were reacted to obtain Step 2 synthesis, then demethylated (Steps 2 and 3), and Step 3 synthesis and squaric acid were reacted. TSQ-1 can be synthesized in a good yield (Step 4). The obtained TSQ-1 can be identified by 1 1 H-NMR, EI-MASS, and elemental analysis.
The squarylium derivative represented by the general formula (1) is not limited to the above method, and can be produced by various known methods.

Figure 0006945841
Figure 0006945841

[有機電子デバイス及びその製造方法]
本発明の有機電子デバイスの一形態である太陽電池デバイスは、一対の電極(陽極2、陰極6)間に少なくとも一層の有機エレクトロルミネッセンス(EL)層が積層された素子構造を有し、典型的には、図1に示すように、基板1、陽極2、正孔輸送層3、活性層4、電子輸送層5及び陰極6が順次積層された素子構造を有する。
以下、本発明の太陽電池デバイスの構成を説明する。
[Organic electronic devices and their manufacturing methods]
The solar cell device, which is one form of the organic electronic device of the present invention, has an element structure in which at least one organic electroluminescence (EL) layer is laminated between a pair of electrodes (anode 2 and cathode 6), which is typical. Has an element structure in which a substrate 1, an anode 2, a hole transport layer 3, an active layer 4, an electron transport layer 5, and a cathode 6 are sequentially laminated as shown in FIG.
Hereinafter, the configuration of the solar cell device of the present invention will be described.

<太陽電池デバイスの構成>
本発明の太陽電池デバイスの構成は、図7の例に限定されず、陽極と陰極との間に順次、1)陽極バッファ層(図示せず)/正孔輸送層/活性層、2)陽極バッファ層(図示せず)/活性層/電子輸送層、3)陽極バッファ層(図示せず)/正孔輸送層/活性層/電子輸送層、4)陽極バッファ層(図示せず)/正孔輸送性化合物、活性化合物および電子輸送性化合物を含む層、5)陽極バッファ層(図示せず)/正孔輸送性化合物及び活性化合物を含む層、6)陽極バッファ層(図示せず)/活性化合物及び電子輸送性化合物を含む層、7)陽極バッファ層(図示せず)/正孔電子輸送性化合物および活性化合物を含む層、8)陽極バッファ層(図示せず)/活性層/正孔ブロック層(図示せず)/電子輸送層を設けた構成等が挙げられる。また、図7に示した活性層は一層であるが、二層以上であってもよい。
<Solar cell device configuration>
The configuration of the solar cell device of the present invention is not limited to the example of FIG. 7, and 1) the anode buffer layer (not shown) / hole transport layer / active layer, and 2) the anode are sequentially placed between the anode and the anode. Buffer layer (not shown) / active layer / electron transport layer, 3) anode buffer layer (not shown) / hole transport layer / active layer / electron transport layer, 4) anode buffer layer (not shown) / positive Layer containing hole-transporting compound, active compound and electron-transporting compound, 5) Anode buffer layer (not shown) / Layer containing hole-transporting compound and active compound, 6) Anode buffer layer (not shown) / Layer containing active compound and electron transporting compound, 7) Anode buffer layer (not shown) / Layer containing hole electron transporting compound and active compound, 8) Anode buffer layer (not shown) / Active layer / Positive Examples thereof include a configuration in which a hole block layer (not shown) / an electron transport layer is provided. The active layer shown in FIG. 7 is one layer, but may be two or more layers.

<陽極>
前記陽極には、−5〜80℃の温度範囲で、面抵抗が、通常1000Ω(オーム)以下、好ましくは100Ω以下の材料が用いられる。
太陽電池デバイスの陽極側から光を取り込む場合(順構造)には、陽極は可視光線に対して透明(380〜680nmの光に対する平均透過率が50%以上)であることが必要であるため、陽極の材料には、酸化インジウム錫(ITO)及びインジウム−亜鉛酸化物(IZO)等が用いられる。これらのうち、入手容易性の観点から、ITOが好ましい。
また、デバイスの陰極側から光を取り込む場合(逆構造)には、陽極の光透過度は制限されないため、陽極の材料には、ITO及びIZOの他に、ステンレスや、銅、銀、金、白金、タングステン、チタン、タンタル若しくはニオブの単体、又はこれらの合金が用いられる。
陽極の厚さは、順構造の場合には、高い光透過率を実現するために、通常2〜300nmであり、逆構造の場合には、通常2nm〜2mmである。
<Anode>
For the anode, a material having a surface resistance of usually 1000 Ω (ohm) or less, preferably 100 Ω or less in a temperature range of −5 to 80 ° C. is used.
When light is taken in from the anode side of the solar cell device (forward structure), the anode needs to be transparent to visible light (average transmittance for light of 380 to 680 nm is 50% or more). As the material of the anode, indium tin oxide (ITO), indium-zinc oxide (IZO) and the like are used. Of these, ITO is preferable from the viewpoint of availability.
Further, when light is taken in from the cathode side of the device (reverse structure), the light transmittance of the anode is not limited. Therefore, in addition to ITO and IZO, stainless steel, copper, silver, gold, and the like can be used as the anode material. A single substance of platinum, tungsten, titanium, tantalum or niobium, or an alloy thereof is used.
The thickness of the anode is usually 2 to 300 nm in the case of the forward structure in order to realize high light transmittance, and is usually 2 nm to 2 mm in the case of the reverse structure.

<陽極バッファ層>
陽極バッファ層は、陽極上に、陽極バッファ層用材料を塗布し、さらに加熱することによって形成される。
この塗布操作においては、スピンコート法、キャスト法、マイクログラビアコート法、グラビアコート法、バーコート法、ロールコート法、ディップコート法、スプレーコート法、スクリーン印刷法、フレキソ印刷法、オフセット印刷法、インクジェットプリント法等の公知の塗布法を適用することがきできる。
また、陽極バッファ層用材料には、活性層形成の際に陽極バッファ層が溶解するのを防ぐ観点から、通常は、有機溶剤に対する耐性の高い材料が用いられる。
陽極バッファ層の厚さは、バッファ層としての効果を充分に発揮させ、また、太陽電池素子の駆動電圧の上昇を防ぐ観点から、通常5〜50nm、好ましくは10〜30nmである。
<Anode buffer layer>
The anode buffer layer is formed by applying a material for an anode buffer layer on the anode and further heating the anode.
In this coating operation, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, dip coating method, spray coating method, screen printing method, flexographic printing method, offset printing method, A known coating method such as an inkjet printing method can be applied.
Further, as the material for the anode buffer layer, a material having high resistance to an organic solvent is usually used from the viewpoint of preventing the anode buffer layer from being dissolved during the formation of the active layer.
The thickness of the anode buffer layer is usually 5 to 50 nm, preferably 10 to 30 nm, from the viewpoint of sufficiently exerting the effect as the buffer layer and preventing an increase in the driving voltage of the solar cell element.

<活性層、正孔輸送層、電子輸送層>
太陽電池デバイスは、活性層、正孔輸送層及び電子輸送層で構成される。
前記活性層には、上記一般式(1)で表されるスクアリリウム誘導体が用いられる。前記スクアリリウム誘導体は、通常アクセプター材料を混合して用いられる。前記スクアリリウム誘導体をドナー材料とし、アクセプター材料とともに、活性層4を形成することにより、高効率の有機太陽電池デバイスを提供することができる。
前記アクセプター材料には、公知の材料が適宜選択して用いられるが、電子輸送性があり、HOMOのエネルギー準位が深い化合物が好ましく、具体的には、フラーレン(C60、C70等)又はその誘導体(PC70BM等)体が好適に用いられる。
<Active layer, hole transport layer, electron transport layer>
The solar cell device is composed of an active layer, a hole transport layer and an electron transport layer.
As the active layer, a squarylium derivative represented by the general formula (1) is used. The squarylium derivative is usually used by mixing an acceptor material. By using the squarylium derivative as a donor material and forming the active layer 4 together with the acceptor material, a highly efficient organic solar cell device can be provided.
As the acceptor material, a known material is appropriately selected and used, but a compound having electron transport property and a deep energy level of HOMO is preferable, and specifically, fullerene (C60, C70, etc.) or a derivative thereof. A body (PC 70 BM, etc.) is preferably used.

前記活性層は、活性層のキャリア輸送性を補う目的で、図7に示すように、正孔輸送層と電子輸送層との間に挿入してもよいし、活性層中に、前記アクセプター材料とともに、正孔輸送性化合物や電子輸送性化合物を分散させて用いてもよい。
正孔輸送性化合物としては、例えば、酸化モリブデン(VI)(MoO3)、酸化バナジウム(V25)、酸化タングステン(WO3)、酸化ルテニウム(RuO2)等の金属酸化物、ヘキサアザトリフェニレンヘキサカルボニル(HATCN)、2,3,5,6−テトラフルオロ−7,7,8,8−テトラシアノ−キノジメタン(F4TCNQ)等の低分子材料や、該低分子材料に重合性官能基を導入して高分子化したもの等が挙げられる。
電子輸送性化合物としては、例えば、BCP(2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン)等のフェナントロリン誘導体、B4PyMPM(ビス−3,6−(3,5−ジ−4−ピリジルフェニル)−2−メチルピリミジン) 等のオリゴピリジン誘導体及び[60]フラーレン、[70]フラーレン等のナノカーボン誘導体等の低分子材料や、該低分子材料に重合性官能基を導入して高分子化したもの等が挙げられる。
The active layer may be inserted between the hole transport layer and the electron transport layer as shown in FIG. 7 for the purpose of supplementing the carrier transport property of the active layer, or the acceptor material may be inserted into the active layer. At the same time, the hole transporting compound and the electron transporting compound may be dispersed and used.
Examples of the hole transporting compound include metal oxides such as molybdenum oxide (VI) (MoO 3 ), vanadium oxide (V 2 O 5 ), tungsten oxide (WO 3 ), ruthenium oxide (RuO 2 ), and hexaaza. Introducing polymerizable functional groups into low molecular weight materials such as triphenylene hexacarbonyl (HATCN), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4TCNQ), and the low molecular weight materials. Then, the polymerized one and the like can be mentioned.
Examples of the electron-transporting compound include phenanthroline derivatives such as BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and B4PyMPM (bis-3,6- (3,5-di-4). Introducing polymerizable functional groups into low molecular weight materials such as oligopyridine derivatives such as −pyridylphenyl) -2-methylpyrimidine) and nanocarbon derivatives such as [60] fullerene and [70] fullerene, and the low molecular weight materials. Examples include polymerized ones.

<正孔ブロック層>
正孔が活性層を通過するのを抑え、活性層内で電子と効率よく再結合させる目的で、活性層の陰極側に隣接して正孔ブロック層を設けてもよい。この正孔ブロック層には、活性化合物よりHOMO準位の深い化合物が用いられ、例えば、トリアゾール誘導体、オキサジアゾール誘導体、フェナントロリン誘導体、アルミニウム錯体等が用いられる。
さらに、励起子(エキシトン)が陰極金属で失活することを防ぐ目的で、活性層の陰極側に隣接してエキシトンブロック層を設けてもよい。このエキシトンブロック層には、活性化合物よりも、三重項励起エネルギーの大きな化合物が用いられ、該化合物としては、トリアゾール誘導体、フェナントロリン誘導体、アルミニウム錯体等が用いられる。
<Hole block layer>
A hole block layer may be provided adjacent to the cathode side of the active layer for the purpose of suppressing holes from passing through the active layer and efficiently recombining with electrons in the active layer. For this hole block layer, a compound having a HOMO level deeper than that of the active compound is used, and for example, a triazole derivative, an oxadiazole derivative, a phenanthroline derivative, an aluminum complex and the like are used.
Further, an exciton block layer may be provided adjacent to the cathode side of the active layer in order to prevent excitons (excitons) from being deactivated by the cathode metal. For this exciton block layer, a compound having a triplet excitation energy larger than that of the active compound is used, and as the compound, a triazole derivative, a phenanthroline derivative, an aluminum complex and the like are used.

<陰極>
陰極材料としては、仕事関数が低く(4eV以下)、かつ、化学的に安定なものが使用される。具体的には、Al、MgAg合金、AlLiやAlCa等のAlとアルカリ金属との合金等の既知の陰極材料が挙げられる。これらの陰極材料の成膜方法としては、抵抗加熱蒸着法、電子ビーム蒸着法、スパッタリング法、イオンプレーティング法等が用いられる。陰極の厚さは、通常10nm〜1μmであり、好ましくは50〜500nmである。
<Cathode>
As the cathode material, a material having a low work function (4 eV or less) and chemically stable is used. Specific examples thereof include known cathode materials such as Al, MgAg alloys, alloys of Al and alkali metals such as AlLi and AlCa. As a film forming method for these cathode materials, a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, an ion plating method and the like are used. The thickness of the cathode is usually 10 nm to 1 μm, preferably 50 to 500 nm.

また、陰極から発電機構への電子注入障壁を下げて電子の注入効率を上げる目的で、陰極より仕事関数の低い金属層を、陰極バッファ層として、陰極と該陰極に隣接する層の間に挿入してもよい。このような目的に使用できる低仕事関数の金属としては、アルカリ金属、アルカリ土類金属、希土類金属等が挙げられる。また、陰極より仕事関数の低いものであれば、合金又は金属化合物も使用することができる。これらの陰極バッファ層の成膜方法としては、蒸着法やスパッタ法等を用いることができる。陰極バッファ層の厚さは、通常0.05〜50nmであり、好ましくは0.1〜20nmである。 Further, for the purpose of lowering the electron injection barrier from the cathode to the power generation mechanism and increasing the electron injection efficiency, a metal layer having a work function lower than that of the cathode is inserted as a cathode buffer layer between the cathode and the layer adjacent to the cathode. You may. Examples of metals having a low work function that can be used for such purposes include alkali metals, alkaline earth metals, and rare earth metals. Further, alloys or metal compounds can also be used as long as they have a lower work function than the cathode. As a film forming method for these cathode buffer layers, a vapor deposition method, a sputtering method, or the like can be used. The thickness of the cathode buffer layer is usually 0.05 to 50 nm, preferably 0.1 to 20 nm.

さらに、陰極バッファ層は、上記の低仕事関数の金属等と電子輸送性化合物との混合物として形成させることもできる。この場合の成膜方法としては共蒸着法を用いることができる。また、溶液による塗布成膜が可能な場合は、スピンコート法、スプレーコート法、ディップコート法、印刷法(インクジェットプリント法、ディスペンサー塗布法)等の成膜方法を用いることができる。この場合の陰極バッファ層の厚さは、通常は0.1〜100nmであり、好ましくは0.5〜50nmである。陰極と有機物層との間に、導電性高分子からなる層、或いは、金属酸化物や金属フッ化物、有機絶縁材料等からなる平均膜厚2nm以下の層を設けてもよい。 Further, the cathode buffer layer can be formed as a mixture of the above-mentioned low work function metal or the like and an electron transporting compound. As a film forming method in this case, a co-deposited method can be used. When coating film formation with a solution is possible, a film forming method such as a spin coating method, a spray coating method, a dip coating method, or a printing method (inkjet printing method, dispenser coating method) can be used. The thickness of the cathode buffer layer in this case is usually 0.1 to 100 nm, preferably 0.5 to 50 nm. A layer made of a conductive polymer or a layer made of a metal oxide, a metal fluoride, an organic insulating material, or the like with an average thickness of 2 nm or less may be provided between the cathode and the organic material layer.

<基板>
基板には、太陽電池デバイスに要求される機械的強度を満たす材料が用いられる。
ボトムエミッション型の太陽電池デバイスには、可視光線に対して透明な基板が用いられ、例えば、ソーダガラス、無アルカリガラス等のガラス;アクリル樹脂、メタクリル樹脂、ポリカーボネート樹脂、ポリエステル樹脂、ナイロン樹脂等の透明プラスチック;シリコンからなる基板等が使用できる。
トップエミッション型の太陽電池デバイスには、ボトムエミッション型の太陽電池素子に用いられる基板に加えて、ステンレスや、銅、銀、金、白金、タングステン、チタン、タンタル若しくはニオブの単体又はこれらの合金からなる基板等が使用できる。
基板の厚さは、要求される機械的強度にもよるが、通常0.1〜10mm、好ましくは0.25〜2mmである。
なお、各層の膜厚は、概ね5nm〜5μmの範囲内である。
<Board>
A material that satisfies the mechanical strength required for a solar cell device is used for the substrate.
A substrate transparent to visible light is used for the bottom emission type solar cell device, for example, glass such as soda glass and non-alkali glass; acrylic resin, methacrylic resin, polycarbonate resin, polyester resin, nylon resin and the like. Transparent plastic; a substrate made of silicon or the like can be used.
Top-emission solar cell devices include substrates used for bottom-emission solar cell elements, as well as stainless steel, copper, silver, gold, platinum, tungsten, titanium, tantalum or niobium alone, or alloys thereof. Can be used as a substrate.
The thickness of the substrate is usually 0.1 to 10 mm, preferably 0.25 to 2 mm, although it depends on the required mechanical strength.
The film thickness of each layer is generally in the range of 5 nm to 5 μm.

(太陽電池デバイスの形成方法)
上記した活性層、正孔輸送層、及び電子輸送層は、例えば、蒸着法(抵抗加熱蒸着法、電子ビーム蒸着法等)、スパッタリング法等のドライプロセス、又は塗布法(スピンコート法、キャスティング法、ダイコート法、マイクログラビアコート法、グラビアコート法、バーコート法、ロールコート法、ワイアーバーコート法、ディップコート法、スプレーコート法、スクリーン印刷法、フレキソ印刷法、オフセット印刷法、インクジェットプリント法等)等のウェットプロセスにより形成することができる。これらの方法のうち、スピンコート法、ダイコート法、スプレーコート法が好ましく用いられる。
(Method of forming a solar cell device)
The above-mentioned active layer, hole transport layer, and electron transport layer may be subjected to, for example, a dry process such as a vapor deposition method (resistive heating vapor deposition method, electron beam vapor deposition method, etc.), a sputtering method, or a coating method (spin coating method, casting method, etc.). , Die coat method, micro gravure coat method, gravure coat method, bar coat method, roll coat method, wire bar coat method, dip coat method, spray coat method, screen printing method, flexo printing method, offset printing method, inkjet printing method, etc. ) Etc. can be formed by a wet process. Of these methods, the spin coating method, the die coating method, and the spray coating method are preferably used.

なお、太陽電池デバイスを長期間、安定的に用いるために、その周囲に保護層及び/又は保護カバーを装着することが好ましい。前記保護層には、高分子化合物、金属酸化物、金属フッ化物、金属ホウ化物等が用いられる。前記保護カバーには、ガラス板、表面に低透水化処理を施したプラスチック板、金属等が用いられ、該カバーを熱硬化性樹脂や光硬化性樹脂で素子基板と貼り合わせて密閉する方法が好適に用いられる。さらに、前記空間に窒素やアルゴンのような不活性ガスを封入すれば、陰極の酸化を防止することができ、酸化バリウム等の乾燥剤を空間内に入れれば、製造工程で吸着した水分が太陽電池素子にタメージを与えるのを抑制できる。 In order to use the solar cell device stably for a long period of time, it is preferable to attach a protective layer and / or a protective cover around the solar cell device. A polymer compound, a metal oxide, a metal fluoride, a metal boride, or the like is used for the protective layer. A glass plate, a plastic plate whose surface has been subjected to a low water permeability treatment, a metal, or the like is used as the protective cover, and a method of sealing the cover with a thermosetting resin or a photocurable resin by adhering it to an element substrate is used. It is preferably used. Further, if an inert gas such as nitrogen or argon is sealed in the space, oxidation of the cathode can be prevented, and if a desiccant such as barium oxide is put in the space, the water adsorbed in the manufacturing process becomes the sun. It is possible to suppress giving a tame to the battery element.

[用途]
本発明の有機電子デバイスは、太陽電池デバイスの他に、マトリックス方式またはセグメント方式による画素として画像表示装置に好適に用いられる。また、上記有機電子デバイスは、画素を形成せずに、面発光光源としても好適に用いられる。
本発明の有機電子デバイスは、具体的には、コンピュータ、テレビ、携帯端末、携帯電話、カーナビゲーション、標識、看板、ビデオカメラのビューファインダー等における表示装置、バックライト、電子写真、照明、レジスト露光、読み取り装置、インテリア照明、光通信システム等における光照射装置に好適に用いられる。
[Use]
In addition to the solar cell device, the organic electronic device of the present invention is suitably used in an image display device as pixels by a matrix method or a segment method. Further, the organic electronic device is preferably used as a surface emitting light source without forming pixels.
Specifically, the organic electronic device of the present invention includes a display device, a backlight, an electrophotographic photograph, lighting, and a resist exposure in a computer, a television, a mobile terminal, a mobile phone, a car navigation system, a sign, a signboard, a viewfinder of a video camera, and the like. , Suitable for reading devices, interior lighting, light irradiation devices in optical communication systems and the like.

以下、本発明を実施例に基づいてさらに具体的に説明するが、本発明は下記実施例により制限されるものではない。 Hereinafter, the present invention will be described in more detail based on Examples, but the present invention is not limited to the following Examples.

[実施例1]TSQ−1の合成

Figure 0006945841
[Example 1] Synthesis of TSQ-1
Figure 0006945841

(i)Step 1
鈴木−宮浦カップリング反応を行った。50mlの三口フラスコに、1−ブロモ−3,5−ジメトキシベンゼン2.17g(10mmol)、4−クロロフェニルボロン酸1.65g(10mmol)、トルエン:エタノール=2:1を30ml、及び2.5MのK2CO3水溶液を10mL入れ、N2バブリングを30分行った後、Pd2(dba)3 40mg(0.05mmol)及びP(tBu)3 0.07mL(0.2mmol)を加え、4時間加熱還流した。
反応液を分液ロートに移し、トルエンを100ml、イオン交換水100mlを加え、一回目の洗浄を行った。2回目と3回目は飽和食塩水を100mlずつ加えて洗浄した。その後、硫酸マグネシウムで乾燥させ、エバポレーターで溶媒を減圧除去し、シリカゲルのカラムクロマトグラフィー(展開溶媒はトルエン:ヘキサン=1:2)で精製を行った。目的物を収量2.14g、収率87%で得た。
(I) Step 1
Suzuki-Miyaura coupling reaction was performed. In a 50 ml three-necked flask, add 2.17 g (10 mmol) of 1-bromo-3,5-dimethoxybenzene, 1.65 g (10 mmol) of 4-chlorophenylboronic acid, 30 ml of toluene: ethanol = 2: 1 and 2.5 M. Add 10 mL of K 2 CO 3 aqueous solution, perform N 2 bubbling for 30 minutes , add Pd 2 (dba) 3 40 mg ( 0.05 mmol) and P (t Bu) 3 0.07 mL (0.2 mmol), and add 4 The mixture was heated under reflux for hours.
The reaction solution was transferred to a separating funnel, 100 ml of toluene and 100 ml of ion-exchanged water were added, and the first washing was performed. The second and third times were washed by adding 100 ml of saturated brine. Then, it was dried with magnesium sulfate, the solvent was removed under reduced pressure with an evaporator, and purification was carried out by column chromatography on silica gel (developing solvent was toluene: hexane = 1: 2). The target product was obtained in a yield of 2.14 g and a yield of 87%.

(ii)Step 2
Buch-wald-Hartwigアミノ化反応を行った。50mlの四口フラスコにStep 1合成物1.1g(4.4mmol)、ジイソブチルアミン0.84g(6.5mmol)、tBuOK 1.1g(30mmol)、脱水キシレンを30ml入れ、N2バブリングを30分行った後にPd2(dba)3 40mg(0.05mmol)、P(tBu)3 0.07mg(0.2mmol)を加え、18時間加熱還流した。
反応液を分液ロートに移し、トルエンを約100ml、イオン交換水約100mlを加え、一回目の洗浄を行った。2回目と3回目は飽和食塩水を100mlずつ加えて洗浄した。その後、硫酸マグネシウムで乾燥させ、エバポレーターで溶媒を減圧除去し、シリカゲルのカラムクロマトグラフィー(展開溶媒はトルエン:ヘキサン=1:2)で精製を行った。目的物を収量1.07g、収率72%で得た。
(Ii) Step 2
A Buch-wald-Hartwig amination reaction was performed. Put 1.1 g (4.4 mmol) of Step 1 compound, 0.84 g (6.5 mmol) of diisobutylamine, 1.1 g (30 mmol) of t BuOK, and 30 ml of dehydrated xylene in a 50 ml four-necked flask, and add 30 N 2 bubbling. After minutes, Pd 2 (dba) 3 40 mg (0.05 mmol) and P (t Bu) 3 0.07 mg (0.2 mmol) were added, and the mixture was heated under reflux for 18 hours.
The reaction solution was transferred to a separating funnel, about 100 ml of toluene and about 100 ml of ion-exchanged water were added, and the first washing was performed. The second and third times were washed by adding 100 ml of saturated brine. Then, it was dried with magnesium sulfate, the solvent was removed under reduced pressure with an evaporator, and purification was carried out by column chromatography on silica gel (developing solvent was toluene: hexane = 1: 2). The target product was obtained in a yield of 1.07 g and a yield of 72%.

(iii)Step 3
BBr3を用いて保護基であるメトキシ基を脱保護し、ヒドロキシル基に変換した。25mlの3つ口フラスコをN2雰囲気下にし、Step 2合成物 1.07g(6.3mmol)を入れ、CH2Cl2(脱水)を入れ氷浴で30分冷却した。その後にBBr3 8.0ml(16mmol)を滴下ロートでゆっくりと加え、室温に戻し21時間撹拌し、再度氷浴で十分に冷却した。そこに、イオン交換水10mlを滴下ロートでゆっくりと加えた。
反応溶液にCH2Cl2を加え分液ロートに移し、純水100mlで洗浄後、飽和食塩水100mlで2回洗浄した。目的物の多くが析出していたので、トルエンで抽出したところ、目的物のみを収量640mg、収率65%で単離できた。
(Iii) Step 3
The protecting group, methoxy group, was deprotected with BBr 3 and converted to a hydroxyl group. Three-necked flask 25ml and under N 2 atmosphere, Step 2 Synthesis was placed 1.07g of (6.3 mmol), and cooled for 30 minutes in an ice bath placed CH 2 Cl 2 (dehydrated). After that, 8.0 ml (16 mmol) of BBr 3 was slowly added with a dropping funnel, the temperature was returned to room temperature, the mixture was stirred for 21 hours, and the mixture was sufficiently cooled in an ice bath again. To there, 10 ml of ion-exchanged water was slowly added with a dropping funnel.
CH 2 Cl 2 was added to the reaction solution, the mixture was transferred to a separating funnel, washed with 100 ml of pure water, and then washed twice with 100 ml of saturated brine. Since most of the target product was precipitated, when extracted with toluene, only the target product could be isolated with a yield of 640 mg and a yield of 65%.

(iv)Step 4
四角酸との脱水縮合反応でTSQ−1を合成した。ディーンスターク管を取り付けた50mlの3つ口フラスコにStep 3合成物640mg(2.0mmol)、四角酸116mg(2.03mmol)を入れ、トルエン:ブタノール=3:1の溶媒を60ml加えた。加熱還流で19時間反応させた。そのまま、ディーンスターク管を使用して反応液を10ml程度まで濃縮し、80℃まで冷ました。そこにシクロヘキサンを30ml加え、5分ほど撹拌しゆっくりと室温まで冷ました。十分に冷ました後、目的物の粉末を濾過で回収、メタノールの分散洗浄を行った。目的物を収量552mg、収率77%で得た。
EI−MASS(図1)、1H−NMR(図2(a)、(b))、元素分析により、TSQ−1が生成したことを確認した。
(Iv) Step 4
TSQ-1 was synthesized by a dehydration condensation reaction with squaric acid. 640 mg (2.0 mmol) of Step 3 compound and 116 mg (2.03 mmol) of squaric acid were placed in a 50 ml three-necked flask equipped with a Dean-Stark tube, and 60 ml of a solvent of toluene: butanol = 3: 1 was added. The reaction was carried out by heating and refluxing for 19 hours. As it was, the reaction solution was concentrated to about 10 ml using a Dean-Stark tube and cooled to 80 ° C. 30 ml of cyclohexane was added thereto, and the mixture was stirred for about 5 minutes and slowly cooled to room temperature. After sufficiently cooling, the target powder was recovered by filtration, and methanol was dispersed and washed. The desired product was obtained in a yield of 552 mg and a yield of 77%.
It was confirmed by EI-MASS (Fig. 1), 1 H-NMR (Fig. 2 (a), (b)) and elemental analysis that TSQ-1 was produced.

MS:m/z 354[M]2+
1H−NMR(400MHz,CDCl3):δ11.08(s,4H),7.65(d,4H,J=9.2Hz),6.73(s,4H),6.69(d,4H,J=9.2Hz),3.25(d,8H,J=7.6Hz),2.18−2.08(m,4H),0.94(d,24H,J=6.4Hz)ppm;
Anal. Calcd for C445226;C,74.97;H,7.44;N,3.97%.Found:C,74.97;H,7.27;N,3.87%
MS: m / z 354 [M] 2+ ;
1 1 H-NMR (400 MHz, CDCl 3 ): δ11.08 (s, 4H), 7.65 (d, 4H, J = 9.2 Hz), 6.73 (s, 4H), 6.69 (d, 4H, J = 9.2Hz), 3.25 (d, 8H, J = 7.6Hz), 2.18-2.08 (m, 4H), 0.94 (d, 24H, J = 6.4Hz) ) Ppm;
Anal. Calcd for C 44 H 52 N 2 O 6 ; C, 74.97; H, 7.44; N, 3.97%. Found: C, 74.97; H, 7.27; N, 3.87%

[試験例1]溶解性
2mgのTSQ−1をサンプル管に量りとり、クロロホルムを200μLずつ足していって溶解性を確認した。
[試験例2]熱特性
熱重量分析装置(TGA)により、5%重量減衰温度(Td)を測定し、示差走査熱量測定装置(DSC)により、ガラス転移温度(Tg)、融点(Tm)を測定した。
TGAでは3〜5mgの試料をアルミ製のパンに乗せ、窒素雰囲気下にて、昇温速度10℃/minで500℃まで昇温し、5%重量減衰温度(Td)を見積もった(図3(a))。また、DSCでも同様に3mgの試料をアルミ製のパンに封入し、窒素雰囲気下にて昇温速度10℃/min で、TGAにより算出したTd−20℃の温度まで昇温し、ガラス転移温度(Tg)と融点(Tm)を測定した(図3(b))。

Figure 0006945841
[Test Example 1] Solubility 2 mg of TSQ-1 was weighed into a sample tube, and 200 μL of chloroform was added to confirm the solubility.
[Test Example 2] Thermal characteristics The 5% weight decay temperature (Td) is measured by a thermogravimetric analyzer (TGA), and the glass transition temperature (Tg) and melting point (Tm) are measured by a differential scanning calorimetry device (DSC). It was measured.
In TGA, a sample of 3 to 5 mg was placed on an aluminum pan, and the temperature was raised to 500 ° C. at a heating rate of 10 ° C./min under a nitrogen atmosphere, and a 5% weight attenuation temperature (Td) was estimated (FIG. 3). (A)). Similarly, in DSC, a 3 mg sample is sealed in an aluminum pan, and the temperature is raised to a temperature of Td-20 ° C calculated by TGA at a temperature rise rate of 10 ° C./min under a nitrogen atmosphere to obtain a glass transition temperature. (Tg) and melting point (Tm) were measured (FIG. 3 (b)).
Figure 0006945841

[試験例3]光学特性
(1)UV−vis吸収スペクトルの測定
石英セルに、10-5Mの濃度に調整したTSQ−1のクロロホルム溶液を入れ、希薄溶液の測定を行った。結果を図4(a)に示す。
また、20分間 UV/O3 洗浄を行った石英基板上に、2mg/mlの濃度に調整したTSQ−1のクロロホルム溶液をスピンコートにより成膜して、TSQ−1単膜の測定を行った。成膜条件は、回転数を2000rpm、溶液濃度を2mg/mL、回転時間を40秒とした。結果を図4(b)に示す。
TSQ−1及びPC71BMをクロロホルムに溶解し(重量比TSQ−1:PC71BM=1:2)、6mg/mLの濃度に調整したTSQ−1及びPC71BMのクロロホルム溶液を、スピンコートにより前記石英基板上に成膜して、TSQ−1とPC71BMとの混合膜の測定を行った。成膜条件は、回転数を2000rpm、溶液濃度を6mg/mL、回転時間を40秒とした。結果を図4(c)に示す。
測定機器には、(株)島津製作所UV−3150を使用し、測定条件はスキャンスピードを中速、測定範囲を200〜1000nm、サンプリングピッチを1.0nm、スリット幅を1.0nmとした。UV−vis吸収スペクトルの吸収端よりエネルギーギャップ(Eg)を見積もり、電子親和力(Ea)を算出した。
[Test Example 3] Optical characteristics (1) Measurement of UV-vis absorption spectrum A chloroform solution of TSQ-1 adjusted to a concentration of 10-5 M was placed in a quartz cell, and a dilute solution was measured. The results are shown in FIG. 4 (a).
In addition, a chloroform solution of TSQ-1 adjusted to a concentration of 2 mg / ml was formed on a quartz substrate that had been UV / O 3 washed for 20 minutes by spin coating, and a single TSQ-1 film was measured. .. The film forming conditions were a rotation speed of 2000 rpm, a solution concentration of 2 mg / mL, and a rotation time of 40 seconds. The results are shown in FIG. 4 (b).
TSQ-1 and PC 71 BM were dissolved in chloroform (weight ratio TSQ-1: PC 71 BM = 1: 2), and a chloroform solution of TSQ-1 and PC 71 BM adjusted to a concentration of 6 mg / mL was spin-coated. A film was formed on the quartz substrate and the mixed film of TSQ-1 and PC 71 BM was measured. The film forming conditions were a rotation speed of 2000 rpm, a solution concentration of 6 mg / mL, and a rotation time of 40 seconds. The results are shown in FIG. 4 (c).
A UV-3150 manufactured by Shimadzu Corporation was used as the measuring device, and the measuring conditions were a medium speed scanning speed, a measuring range of 200 to 1000 nm, a sampling pitch of 1.0 nm, and a slit width of 1.0 nm. The energy gap (Eg) was estimated from the absorption edge of the UV-vis absorption spectrum, and the electron affinity (Ea) was calculated.

(2)発光スペクトルの測定
単膜の成膜条件は回転数2000rpm、溶液濃度2mg/mL、回転時間40秒で成膜を行った。PC71BMとの混合膜の成膜条件は、回転数2000rpm、溶液濃度6mg/mL(重量比TSQ−1:PC71BM=1:2)、回転時間40秒で成膜を行った。測定条件は、測定範囲が580〜850(最大)nm、スリット幅は1.0nmで行った。
(2) Measurement of Emission Spectrum The single film was formed at a rotation speed of 2000 rpm, a solution concentration of 2 mg / mL, and a rotation time of 40 seconds. The film formation conditions for the mixed film with PC 71 BM were a rotation speed of 2000 rpm, a solution concentration of 6 mg / mL (weight ratio TSQ-1: PC 71 BM = 1: 2), and a rotation time of 40 seconds. The measurement conditions were such that the measurement range was 580 to 850 (maximum) nm and the slit width was 1.0 nm.

(3)TSQ−1単膜、及び、TSQ−1/PC71BM混合膜の目視観察
TSQ−1単膜、及び、TSQ−1/PC71BM混合膜のそれぞれをスピンコート成膜し、写真に収めた。TSQ−1単膜の成膜条件は回転数2000rpm、溶液濃度2mg/mL、回転時間40秒とした。TSQ−1/PC71BM混合膜の成膜条件は、回転数2000rpm、溶液濃度6mg/mL(重量比TSQ−1:PC71BM=1:2)、回転時間40秒で成膜を行った。結果を図6に示す。
(3) TSQ-1 single-layer, and, TSQ-1 / PC 71 BM mixed film visually observed TSQ-1 single film, and the respective TSQ-1 / PC 71 BM mixed film by spin coating deposition, photo I put it in. The film forming conditions for the TSQ-1 single film were a rotation speed of 2000 rpm, a solution concentration of 2 mg / mL, and a rotation time of 40 seconds. The film formation conditions for the TSQ-1 / PC 71 BM mixed film were a rotation speed of 2000 rpm, a solution concentration of 6 mg / mL (weight ratio TSQ-1: PC 71 BM = 1: 2), and a rotation time of 40 seconds. .. The results are shown in FIG.

[試験例4]電気化学特性
サイクリックボルタンメトリーにより、ビーエーエス株式会社のALS660Bモデル電気化学アナライザーを用いて溶液中のHOMO/LUMOの測定を行った。
測定条件は、溶媒ジクロロメタン(6mL)、試料(TSQ−1)3μmol、フェロセン1.0mg、及びテトラブチルアンモニウムテトラフルオロボレート(TBABF4)170mgを用いて、0.5mM 溶液を調整し、測定を行った。結果を図5に示す。
[Test Example 4] Electrochemical properties HOMO / LUMO in a solution was measured using an ALS660B model electrochemical analyzer manufactured by BAS Co., Ltd. by cyclic voltammetry.
As for the measurement conditions, a 0.5 mM solution was prepared using the solvent dichloromethane (6 mL), sample (TSQ-1) 3 μmol, ferrocene 1.0 mg, and tetrabutylammonium tetrafluoroborate (TBABF 4 ) 170 mg, and the measurement was performed. rice field. The results are shown in FIG.

Figure 0006945841
Figure 0006945841

1 基板
2 陰極
3 正孔輸送層
4 活性層
5 電子輸送層
6 陰極
1 Substrate 2 Cathode 3 Hole transport layer 4 Active layer 5 Electron transport layer 6 Cathode

Claims (2)

下記一般式(1)で表されるスクアリリウム誘導体;
Figure 0006945841
Figure 0006945841
(一般式(1)中、Ar1及びAr 4 は、それぞれ独立に芳香族置換基を表し、Ar2は一般式(2)で表される置換基を表し、Ar 3 は一般式(3)で表される置換基を表し、該一般式(1)〜(3)中、R1〜R32は、それぞれ独立に水素原子、脂肪族置換基又は芳香族置換基を表す。)
Squalylium derivative represented by the following general formula (1);
Figure 0006945841
Figure 0006945841
(In the general formula (1), Ar 1 and Ar 4 each independently represent an aromatic substituent, Ar 2 represents a substituent represented by the general formula (2), and Ar 3 represents the general formula (3). In the general formulas (1) to (3), R 1 to R 32 independently represent a hydrogen atom, an aliphatic substituent or an aromatic substituent, respectively.)
請求項1に記載のスクアリリウム誘導体を含む有機電子デバイス。 An organic electronic device containing the squarylium derivative according to claim 1.
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