JP6956788B2 - Board processing method and board processing system - Google Patents

Description

The present disclosure relates to a substrate processing method and a substrate processing system.

In recent years, in order to meet the demand for miniaturization and weight reduction of semiconductor devices, elements, circuits, terminals, etc. are formed on the first main surface of a substrate such as a semiconductor wafer, and then the first surface opposite to the first main surface of the substrate is formed. 2 The main surface is ground to make the substrate thinner. When the substrate is thinned, the first main surface of the substrate is protected by a protective tape. Generally, after the substrate is thinned, the substrate is diced to divide the substrate into a plurality of semiconductor devices (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2011-91240

By the way, as a dicing method for a substrate, stealth dicing (SD) is known in which laser processing is performed only on the inside of the substrate using laser light. In the manufacturing process of a semiconductor device, when thinning is performed after stealth dicing of a substrate, each chip is held by grinding the second main surface with a protective tape attached to the first main surface as in the conventional case. Since the rigidity of the protective tape is low, the relative position of each chip may fluctuate, resulting in poor processing stability.

An object of the present disclosure is to provide a substrate processing method and a substrate processing system capable of improving the processing stability of a semiconductor device.

The substrate processing method according to one aspect of the embodiment of the present invention includes a support substrate bonding step of adhering a support substrate to the first main surface on the side where the device layer of the substrate is formed, and the support in the support substrate bonding step. A dicing step of forming a modified layer which is a starting point of fracture inside the substrate from a second main surface opposite to the first main surface to which the substrate is adhered, and a dicing step of the substrate on which the dicing step is performed. A DAF (Die Atach) is applied to the second main surface of the substrate, which is thinned in the second main surface to be thinned by grinding the substrate and adhered to the support substrate in the thinning step. After the DAF adhesion step of adhering Film) and the DAF adhering step, the DAF adhered to the substrate adhered to the support substrate along the boundary between a plurality of chips constituting the substrate is divided and processed. After the DAF division processing step, the tape adhering step of adhering the adhesive tape to the DAF adhering to the substrate adhering to the support substrate, and the tape adhering step, the support substrate is peeled from the substrate. It has a support substrate peeling step and a step of peeling off the support substrate .

Similarly, in the substrate processing system according to one aspect of the embodiment of the present invention, the support substrate is adhered to the first main surface on the side where the device layer is formed, and the second main surface on the side opposite to the first main surface is adhered. After the modified layer serving as the starting point of fracture is formed from the surface to the inside, the support substrate is held and adhered to the support substrate for the substrate thinned by grinding the second main surface. and DAF coupling portion coupled to the DAF (Die Attach Film) on said second main surface of the substrate is, along the boundaries of a plurality of chips constituting the substrate of the DAF is attached at the DAF attachment portion Te, wherein the DAF dividing processing unit for dividing processing the deposited the DAF on the substrate being adhered to the support substrate, wherein attached to the second major surface of the substrate being adhered to the support substrate DAF to the adhesive tape attaching unit for attaching the adhesive tape, and the DAF adhering unit, the DAF division processing unit, between said adhesive tape attachment, transports the substrate being bonded to the support substrate carrying The apparatus includes an apparatus and a support substrate peeling portion for peeling the support substrate from the substrate to which the adhesive tape is attached at the adhesive tape attachment portion .

According to the present disclosure, it is possible to provide a substrate processing method and a substrate processing system capable of improving the processing stability of a semiconductor device.

It is a top view which shows the substrate processing system which concerns on embodiment. It is a perspective view which shows the substrate after processing by the substrate processing system 1. It is a figure which shows the state which the support substrate is attached to the substrate in the support substrate adhesive part. It is a figure which shows the dicing part. It is a figure which shows the rough grinding part of the thinning part. It is a figure which shows the DAF attachment part. It is a figure which shows the DAF division processing part. It is a figure which shows the state of the substrate and the support substrate in the adhesive tape attachment part. It is a figure which shows the state of the substrate and the support substrate in the support substrate peeling part. It is a figure which shows the expanded part. It is a figure which shows the mount part. It is a figure which shows the state of the substrate in a cleaning part. It is a flowchart of the substrate processing method which concerns on embodiment. It is a figure which shows the laminated structure of the substrate in the modification of embodiment.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In order to facilitate understanding of the description, the same components are designated by the same reference numerals as much as possible in each drawing, and duplicate description is omitted.

[Embodiment]
An embodiment will be described with reference to FIGS. 1 to 13. In the following description, the X direction, the Y direction, and the Z direction are perpendicular to each other, the X direction and the Y direction are the horizontal direction, and the Z direction is the vertical direction. The direction of rotation centered on the vertical axis is also called the θ direction.

<Board processing system>
FIG. 1 is a plan view showing a substrate processing system 1 according to an embodiment. The substrate processing system 1 performs dicing of the substrate 10, thinning of the substrate 10, adhesion of DAF to the substrate 10, increasing the distance between chips, mounting of the substrate 10, and the like. The board processing system 1 includes a loading / unloading station 20, a processing station 30, and a control device 90.

The cassette C is carried in and out of the carry-in / out station 20 from the outside. The cassette C accommodates a plurality of substrates 10 at intervals in the Z direction. The loading / unloading station 20 includes a mounting table 21 and a transport area 25.

The mounting table 21 includes a plurality of mounting plates 22. The plurality of mounting plates 22 are arranged in a row in the Y direction. A cassette C is mounted on each mounting plate 22. The cassette C on one mounting plate 22 may accommodate the substrate 10 before processing, and the cassette C on the other mounting plate 22 may accommodate the substrate 10 after processing.

The transport area 25 is arranged adjacent to the mounting table 21 in the X direction. The transport area 25 is provided with a transport path 26 extending in the Y direction and a transport device 27 that can move along the transport path 26. The transport device 27 may be movable not only in the Y direction but also in the X direction, the Z direction, and the θ direction. The transport device 27 transports the substrate 10 between the cassette C mounted on the mounting plate 22 and the transition portion 35 of the processing station 30.

The processing station 30 includes a transport region 31, a transition unit 35, and various processing units described later. The arrangement and number of processing units are not limited to the arrangement and number shown in FIG. 1, and can be arbitrarily selected. Further, the plurality of processing units may be arranged in an arbitrary unit in a distributed or integrated manner.

The transport region 31 is provided on the side opposite to the transport region 25 in the X direction with reference to the transition portion 35. The transition unit 35 and various processing units are provided in contact with the transport region 31 and are provided so as to surround the transport region 31.

The transport region 31 is provided with a transport path 32 extending in the X direction and a transport device 33 that can move along the transport path 32. The transport device 33 may be movable not only in the X direction but also in the Y direction, the Z direction, and the θ direction. The transport device 33 transports the substrate 10 between the processing units adjacent to the transport region 31.

The control device 90 is composed of, for example, a computer, and has a CPU (Central Processing Unit) 91, a storage medium 92 such as a memory, an input interface 93, and an output interface 94, as shown in FIG. The control device 90 performs various controls by causing the CPU 91 to execute the program stored in the storage medium 92. Further, the control device 90 receives a signal from the outside through the input interface 93 and transmits the signal to the outside through the output interface 94.

The program of the control device 90 is stored in the information storage medium and installed from the information storage medium. Examples of the information storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical desk (MO), a memory card, and the like. The program may be downloaded and installed from the server via the Internet.

<Substrate after processing by the substrate processing system>
FIG. 2 is a perspective view showing the substrate 10 after processing by the substrate processing system 1. The substrate 10 is attached to the frame 59 via the adhesive tape 51 after being subjected to processing such as dicing, thinning, adhesion of DAF15, and expansion of the interval between the chips 13.

The adhesive tape 51 is composed of a sheet base material and an adhesive applied to the surface of the sheet base material. The adhesive tape 51 is attached to the frame 59 so as to cover the opening of the ring-shaped frame 59, and is attached to the substrate 10 at the opening of the frame 59. As a result, the frame 59 can be held and the substrate 10 can be conveyed, and the handleability of the substrate 10 can be improved.

As shown in FIG. 2, a DAF (Die Attach Film) 15 may be provided between the adhesive tape 51 and the substrate 10. DAF15 is an adhesive sheet for die bonding. DAF15 is used for adhering laminated chips to each other, adhering chips to a base material, and the like. DAF15 may be either conductive or insulating.

The DAF 15 is formed smaller than the opening of the frame 59 and is provided inside the frame 59. The DAF covers the entire second main surface 12 of the substrate 10. Since the DAF 15 is unnecessary when the chips 13 are not laminated, the substrate 10 may be mounted on the frame 59 only via the adhesive tape 51.

Hereinafter, the support substrate adhesive portion 40, the dicing portion 100, the thin plate portion 200, the DAF adhesion portion 300, the DAF division processing portion 400, the adhesive tape attachment portion 510, the support substrate peeling portion 520, and the expand are arranged in the processing station 30. The unit 530, the mount unit 540, and the cleaning unit 600 will be described in this order.

<Support board adhesive part>
FIG. 3 is a diagram showing a state in which the support substrate 41 is mounted on the substrate 10 at the support substrate adhesive portion 40. The support substrate bonding portion 40 adheres the support substrate 41 to the substrate 10 before processing by the substrate processing system 1. The substrate 10 is, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, a sapphire substrate, or the like. The first main surface 11 of the substrate 10 before processing is partitioned by a plurality of streets formed in a grid pattern, and a device layer 14 including elements, circuits, terminals, and the like is formed in advance in the partitioned region.

The support substrate 41 protects the first main surface 11 of the substrate 10 and protects the device layer 14 previously formed on the first main surface 11 during processing such as dicing and thinning. The support substrate 41 is a flat plate-shaped substrate having substantially the same diameter as the substrate 10, and supports the substrate 10. The support substrate 41 is a transparent glass substrate in this embodiment. The support substrate 41 may have a relatively high rigidity as compared with a conventional protective tape or the like. For example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a substrate other than glass such as a sapphire substrate may be used. Applicable. Further, the support substrate 41 has a function of supporting the substrate 10 and also functions as a carrier for transporting the substrate 10 between each part of the substrate processing system 1.

The support substrate adhesive portion 40 applies an adhesive to the first main surface 11 on the side where the device layer 14 of the substrate 10 is formed to form an adhesive layer 42, and the adhesive layer 42 attaches the support substrate 41 to the substrate 10. Glue. In the present embodiment, the support substrate adhesive portion 40 cures the adhesive layer 42 by irradiating the adhesive layer 42 with ultraviolet rays via the transparent support substrate 41 to increase the adhesive strength of the adhesive layer 42 and support the adhesive layer 42. The substrate 41 is adhered to the substrate 10. As a method for curing the adhesive layer 42, a method using heat or a laser may be applied in addition to the irradiation with ultraviolet rays. Further, instead of applying the adhesive to the first main surface 11, the adhesive may be applied to the support substrate 41 side for adhesion.

As the material of the adhesive layer 42, it can be cured by irradiation or heating with ultraviolet rays or lasers to increase the adhesive strength, and in the cured state, it is further cured, softened or modified by irradiation or heating with ultraviolet rays or lasers. It is possible to use a material that causes quality and the like and weakens the adhesive force so that it can be easily peeled off. Examples of such a material include an ultraviolet curable resin, a thermosetting resin, and a thermoplastic resin. The adhesive layer 42 may be composed of a plurality of layers. In this case, only a part of the layers may be deteriorated to facilitate peeling.

<Dicing section>
FIG. 4 is a diagram showing a dicing unit 100. The dicing unit 100 dices the substrate 10. Here, the dicing of the substrate 10 means a process for dividing the substrate 10 into a plurality of chips 13, and in particular, in the present embodiment, as shown in FIG. 4, the substrate 10 is broken into the inside of the substrate 10 by using a laser beam. Stealth dicing (SD) is performed to form the modified layer 16 which is the starting point of the above. The dicing unit 100 includes, for example, a substrate holding unit 110, a substrate processing unit 120, and a moving mechanism unit 130.

The substrate holding portion 110 holds the substrate 10 via the support substrate 41. The substrate 10 may be held horizontally. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 is the upper surface. The substrate holding portion 110 is, for example, a vacuum chuck.

The substrate processing unit 120 dices the substrate 10 held by the substrate holding unit 110, for example. The substrate processing unit 120 includes, for example, a laser oscillator 121 and an optical system 122 that irradiates the substrate 10 with a laser beam from the laser oscillator 121. The optical system 122 is composed of a condenser lens or the like that focuses the laser beam from the laser oscillator 121 toward the substrate 10.

The moving mechanism unit 130 relatively moves the substrate holding unit 110 and the substrate processing unit 120. The moving mechanism unit 130 is composed of, for example, an XYZ θ stage that moves the substrate holding unit 110 in the X direction, the Y direction, the Z direction, and the θ direction.

The control device 90 controls the substrate processing unit 120 and the moving mechanism unit 130 to dice the substrate 10 along the streets that partition the substrate 10 into the plurality of chips 13. In this embodiment, a laser beam having transparency to the substrate 10 is used.

Although the support substrate bonding portion 40 and the dicing portion 100 are arranged at the processing station 30 of the substrate processing system 1 in this embodiment, they may be provided outside the substrate processing system 1. In this case, the substrate 10 is diced and then carried into the loading / unloading station 20 from the outside.

<Thinning part>
The thin plate 200 (see FIG. 1) thins the substrate 10 by processing the second main surface 12 opposite to the first main surface 11 protected by the support substrate 41 of the diced substrate 10. To dice. When the dicing portion 100 forms the starting point of division (modified layer 16), a processing stress acts on the substrate 10 in the process of thinning, so that cracks develop from the starting point of division in the plate thickness direction, and the substrate 10 becomes It is divided into a plurality of chips 13. As shown in FIG. 1, for example, the thin plate portion 200 includes a rotary table 201, a chuck table 202 as a substrate adsorption portion, a rough grinding portion 210, a finish grinding portion 220, and a damaged layer removing portion 230.

The rotary table 201 is rotated about the center line of the rotary table 201. A plurality of (for example, four in FIG. 1) chuck tables 202 are arranged at equal intervals around the rotation center line of the rotary table 201.

The plurality of chuck tables 202 rotate around the center line of the rotary table 201 together with the rotary table 201. The center line of the rotary table 201 is vertical. Each time the rotary table 201 rotates, the chuck table 202 facing the rough grinding section 210, the finish grinding section 220, and the damage layer removing section 230 is changed.

The chuck table 202 attracts the substrate 10 via the support substrate 41. The chuck table 202 is, for example, a vacuum chuck. The substrate 10 may be held horizontally. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 is the upper surface.

FIG. 5 is a diagram showing a rough grinding portion 210 of the thin plate portion 200. The rough grinding unit 210 roughly grinds the substrate 10. The rough grinding unit 210 has a rotary grindstone 211, for example, as shown in FIG. The rotary grindstone 211 is rotated around its center line and lowered together to process the upper surface (that is, the second main surface 12) of the substrate 10 held by the chuck table 202. Grinding liquid is supplied to the upper surface of the substrate 10.

The finish grinding unit 220 performs finish grinding of the substrate 10. The configuration of the finish grinding unit 220 is almost the same as the configuration of the rough grinding unit 210. However, the average particle size of the abrasive grains of the rotary grindstone of the finish grinding section 220 is smaller than the average particle size of the abrasive grains of the rotary grindstone of the rough grinding section 210.

The damage layer removing unit 230 removes the damaged layer formed on the second main surface 12 of the substrate 10 by grinding such as rough grinding or finish grinding. For example, the damage layer removing unit 230 removes the damaged layer by supplying a treatment liquid to the substrate 10 and performing a wet etching process. The method of removing the damaged layer is not particularly limited.

The thin plate portion 200 may have a polishing portion for polishing the substrate 10. The structure of the polishing section is almost the same as the structure of the rough grinding section 210. Examples of polishing of the substrate 10 include CMP (Chemical Mechanical Polishing) and the like. Further, the thin plate portion 200 may have a gettering portion that forms gettering sites (for example, crystal defects and strains) that capture impurities. The number of chuck tables 202 is four in FIG. 1, but it is appropriately changed according to the number of types of processing. Further, one processing unit (for example, the damage layer removing unit 230) may perform a plurality of types of processing (for example, damage layer removal and gettering site formation).

<DAF attachment part>
FIG. 6 is a diagram showing a DAF attachment portion 300. The DAF attachment portion 300 adheres the DAF 15 to the second main surface 12 of the thinned substrate 10. For example, the DAF adhering portion 300 has a DAF coating portion 310 for applying a DAF coating liquid containing the material of DAF 15 to the second main surface 12 of the thinned substrate 10. The DAF coating unit 310 is composed of, for example, a nozzle for discharging a DAF coating liquid.

In addition to the DAF coating portion 310, the DAF adhering portion 300 has a substrate holding portion 311 that holds the substrate 10 via the support substrate 41. The substrate 10 may be held horizontally. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 is the upper surface. The substrate holding portion 311 is, for example, a vacuum chuck.

The DAF coating unit 310 is moved relative to the substrate holding unit 311 and applies the DAF coating liquid to the second main surface 12 of the substrate 10 held by the substrate holding unit 311. The coating method is not particularly limited, and examples thereof include a spin coating method, an inkjet method, and a screen printing method.

The coating liquid for DAF contains, for example, a resin such as acrylic or epoxy and a solvent for dissolving the resin, and is contained in a bottle. A flow rate adjusting valve, a flow meter, or the like is provided in the middle of the pipe connecting the bottle and the DAF coating portion 310.

The DAF coating liquid is applied to the second main surface 12 of the substrate 10 to form a liquid film. DAF15 is formed by drying the liquid film. When a DAF coating liquid is used, the film thickness of the DAF 15 can be changed by changing the film thickness of the liquid film. Further, the material of DAF15 can be easily changed by exchanging the bottle of the coating liquid for DAF.

The DAF adhering portion 300 uses a method other than the method shown in FIG. 6, such as attaching a DAF 15 formed into a film in advance to the second main surface 12 of the thinned substrate 10. DAF15 may be attached to the surface.

<DAF division processing part>
FIG. 7 is a diagram showing a DAF division processing section 400. The DAF division processing unit 400 performs division processing of the DAF 15 along the boundary line between the chips 13. Here, the division processing of the DAF 15 means a processing for dividing the DAF 15, and includes dividing the DAF 15 and forming a starting point of the division in the DAF 15. The DAF division processing unit 400 includes, for example, a substrate holding unit 410, a DAF processing unit 420, and a moving mechanism unit 430.

The substrate holding portion 410 holds the substrate 10 via the support substrate 41. The substrate 10 may be held horizontally. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 adhered to the DAF 15 of the substrate 10 is the upper surface. The substrate holding portion 410 is, for example, a vacuum chuck.

The DAF processing unit 420 performs division processing of the substrate 10 held by the substrate holding unit 410 and the DAF 15 adhered to the substrate 10. The DAF processing unit 420 includes, for example, a laser oscillator 421 and an optical system 422 that irradiates the DAF 15 with a laser beam from the laser oscillator 421. The optical system 422 is composed of a condenser lens or the like that focuses the laser beam from the laser oscillator 421 toward the DAF 15.

The moving mechanism unit 430 relatively moves the substrate holding unit 410 and the DAF processing unit 420. The moving mechanism unit 430 is composed of, for example, an XYZ θ stage that moves the substrate holding unit 410 in the X direction, the Y direction, the Z direction, and the θ direction.

The control device 90 controls the DAF processing unit 420 and the moving mechanism unit 430 to divide the DAF 15 along the boundary line between the chips 13. A modified layer serving as a starting point of fracture may be formed inside the DAF 15, or a laser machining groove may be formed on the laser irradiation surface (for example, the upper surface in FIG. 7) of the DAF 15. The laser machining groove may or may not penetrate the DAF 15 in the film thickness direction.

When forming the modified layer inside the DAF15, a laser beam having transparency to the DAF15 is used. On the other hand, when a laser processing groove is formed on the laser irradiation surface of the DAF 15, a laser beam having absorbency with respect to the DAF 15 is used.

In the present embodiment, the DAF processing unit 420 has a laser oscillator that irradiates the DAF 15 with a laser beam, but may have a cutting blade that cuts the DAF 15, or a scrubber that forms a scrubber groove on the surface of the DAF 15. You may have.

<Adhesive tape attachment part>
FIG. 8 is a diagram showing a state of the substrate 10 and the support substrate 41 in the adhesive tape adhering portion 510. The adhesive tape adhering portion 510 adheres the adhesive tape 51 to the second main surface 12 of the substrate 10 to which the DAF 15 is attached. As shown in FIG. 8, for example, the adhesive tape adhering portion 510 is placed on a table or the like with the adhesive surface of the adhesive tape 51 facing upward, and the surface of the DAF 15 adhered to the second main surface 12 of the substrate 10 is placed on the table or the like. By adhering to the adhesive surface of the adhesive tape 51, the adhesive tape 51 is attached to the second main surface 12 side of the substrate 10. In this case, as shown in FIG. 8, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the upper surface, and the second main surface 12 adhered to the DAF 15 of the substrate 10 is the lower surface.

<Support substrate peeling part>
FIG. 9 is a diagram showing a state of the substrate 10 and the support substrate 41 in the support substrate peeling portion 520. The support substrate peeling portion 520 peels the support substrate 41 from the substrate 10. It is possible to prevent the support substrate 41 from becoming an obstacle when increasing the distance between the plurality of chips 13 constituting the substrate 10.

The support substrate peeling portion 520 further cures the adhesive layer 42 cured by the support substrate adhesive portion 40 by irradiating the adhesive layer 42 with ultraviolet rays, for example, via the support substrate 41, and lowers the adhesive strength. After the adhesive strength of the adhesive layer 42 is reduced, the support substrate 41 can be easily peeled from the substrate 10 by a peeling operation. Instead of irradiating with ultraviolet rays, the adhesive strength of the adhesive layer 42 may be reduced by heating or irradiating with a laser.

<Expanding section>
FIG. 10 is a diagram showing an expanding portion 530. The expanding unit 530 widens the distance between the plurality of chips 13 constituting the substrate 10 to which the DAF 15 is attached. By widening the distance between the chips 13, chipping during transportation and pickup can be suppressed.

The expanding portion 530 has, for example, an adhesive tape stretching portion 535 that widens the distance between the chips 13 by radially stretching the adhesive tape 51 attached to the substrate 10 via the DAF 15. The adhesive tape stretching portion 535 includes, for example, an adhesive tape outer peripheral holding portion 536, an adhesive tape pressing portion 537, and an adhesive tape pressing driving unit 538.

The adhesive tape outer peripheral holding portion 536 holds the outer peripheral portion of the adhesive tape 51. The adhesive tape outer peripheral holding portion 536 is formed in a ring shape, for example. A ring-shaped gap is formed between the adhesive tape outer peripheral holding portion 536 and the substrate 10 arranged inside the adhesive tape outer peripheral holding portion 536.

The adhesive tape pressing portion 537 presses the adhesive tape 51 between the inner circumference of the adhesive tape outer peripheral holding portion 536 and the outer circumference of the adhesive tape 51 held by the adhesive tape outer peripheral holding portion 536 and the attached substrate 10. do. The adhesive tape pressing portion 537 is formed in a cylindrical shape, for example.

The adhesive tape pressing drive unit 538 relatively moves the adhesive tape outer peripheral holding unit 536 and the adhesive tape pressing unit 537. The moving direction is perpendicular to the main surface of the substrate 10 (for example, the first main surface 11), for example, the vertical direction. The adhesive tape pressing drive unit 538 is composed of a cylinder or the like.

The control device 90 controls the adhesive tape pressing drive unit 538 to press the adhesive tape 51 to radially stretch the adhesive tape 51. As a result, the distance between the chips 13 can be widened, and a gap can be formed between the chips 13.

<Mount part>
FIG. 11 is a diagram showing a mount portion 540. The mount portion 540 mounts the substrate 10 having a wide distance between the chips 13 on the frame 59 via the DAF 15 and the adhesive tape 51.

For example, the mount portion 540 has a frame holding portion 547 that holds the frame 59 and a bonding portion 548 that attaches the substrate 10 to the frame 59 held by the frame holding portion 547 via the adhesive tape 51 and the DAF 15. Have. The bonding portion 548 is, for example, a moving mechanism portion that relatively moves the flat holding portion 549 that flatly holds the mounting portion 52 mounted on the frame 59 of the adhesive tape 51, and the flat holding portion 549 and the frame holding portion 547. It has 550 and.

The mounting portion 52 mounted on the frame 59 of the adhesive tape 51 is held flat by the flat holding portion 549, is held parallel to the frame 59, is relatively close to the frame 59, and is bonded to the frame 59. NS. On the other hand, the surplus portion 53 that is not attached to the frame 59 of the adhesive tape 51 may be cut off with a cutter or the like. Since the mounting portion 52 mounted on the frame 59 of the adhesive tape 51 does not loosen, the distance between the chips 13 can be maintained.

<Washing section>
FIG. 12 is a diagram showing a state of the substrate 10 in the cleaning unit 600. The cleaning unit 600 cleans the first main surface 11 of the substrate 10 from which the support substrate 41 has been peeled off. As a result, the adhesive layer 42 remaining on the first main surface 11 is removed.

<Board processing method>
Next, a substrate processing method using the substrate processing system 1 having the above configuration will be described. FIG. 13 is a flowchart of the substrate processing method according to the embodiment.

As shown in FIG. 13, the substrate processing method includes a carry-in step S101, a support substrate bonding step S102, a dying step S103, a thinning plate step S104, a DAF bonding step S105, a DAF dividing processing step S106, and a tape bonding step. It includes S107, a support substrate peeling step S108, an expanding step S109, a mounting step S110, a tape cutting step S111, a cleaning step S112, and a unloading step S113. These steps are carried out under the control of the control device 90. The order of these steps is not limited to the order shown in FIG.

In the carry-in step S101, the transfer device 27 transfers the substrate 10 from the cassette C on the mounting table 21 to the transition portion 35 of the processing station 30, and then the transfer device 33 transfers the substrate 10 from the transition portion 35 to the support substrate adhesive portion 40. Transport.

In the support substrate bonding step S102, as shown in FIG. 3, the support substrate adhesive portion 40 applies an adhesive to the first main surface 11 on the side where the device layer 14 of the substrate 10 is formed to form the adhesive layer 42. It is formed and the support substrate 41 is adhered to the substrate 10 by the adhesive layer 42. The support substrate adhesive portion 40 cures the adhesive layer 42 by irradiating the adhesive layer 42 with ultraviolet rays, for example, via the support substrate 41, and adheres the support substrate 41 to the substrate 10. Instead of applying the adhesive to the first main surface 11, the adhesive may be applied to the support substrate 41 side for adhesion.

In the dicing step S103, as shown in FIG. 4, the dicing unit 100 dices the substrate 10 along a street that divides the substrate 10 into a plurality of chips 13.

In the thinning step S104, as shown in FIG. 5, the thinning portion 200 processes the second main surface 12 on the side opposite to the first main surface 11 protected by the support substrate 41 of the substrate 10. The substrate 10 is thinned. At this time, the first main surface 11 side of the substrate 10 is held by the support substrate 41.

In the DAF attachment step S105, as shown in FIG. 6, the DAF attachment portion 300 adheres the DAF 15 to the second main surface 12 of the thinned substrate 10. For example, in the DAF adhesion step S105, a DAF coating liquid containing the material of DAF 15 is applied to the second main surface 12 of the thinned substrate 10.

The DAF coating liquid is applied to the second main surface 12 of the substrate 10 to form a liquid film. DAF15 is formed by drying the liquid film. When a DAF coating liquid is used, the film thickness of the DAF 15 can be changed by changing the film thickness of the liquid film. Further, the material of DAF15 can be easily changed by exchanging the bottle of the coating liquid for DAF.

In the DAF attachment step S105, the DAF attachment portion 300 may attach the DAF15 previously molded into a film to the second main surface 12 of the thinned substrate 10. Since the DAF15 is formed into a film in advance, it is possible to prevent the DAF15 from scattering around the substrate 10.

In the DAF division processing step S106, as shown in FIG. 7, the DAF division processing unit 400 divides and processes the DAF 15 along the boundary line between the chips 13.

The expanding step S109 may be performed without performing the DAF division processing step S106. By increasing the distance between the chips 13 in the expanding step S109, the DAF 15 can be torn along the boundary line between the chips 13.

In the present embodiment, the DAF division processing step S106 is performed after the DAF adhesion step S105 and before the expanding step S109. Therefore, since DAF15 having low tearability can be used, the choice of the resin type of DAF15 is expanded.

In the tape attachment step S107, as shown in FIG. 8, the adhesive tape attachment portion 510 attaches the adhesive tape 51 to the second main surface 12 of the substrate 10 to which the DAF 15 is attached.

In the support substrate peeling step S108, as shown in FIG. 9, the support substrate peeling portion 520 peels the support substrate 41 from the substrate 10. The support substrate peeling portion 520 further cures the adhesive layer 42 cured in the support substrate bonding step S102 by irradiating the adhesive layer 42 with ultraviolet rays, for example, via the support substrate 41, and lowers the adhesive strength. After the adhesive strength of the adhesive layer 42 is reduced, the support substrate 41 can be easily peeled from the substrate 10 by a peeling operation. Instead of irradiating with ultraviolet rays, the adhesive strength of the adhesive layer 42 may be reduced by heating or irradiating with a laser.

In the expanding step S109, as shown in FIG. 10, the expanding portion 530 widens the distance between the plurality of chips 13 constituting the substrate 10 adhered to the DAF 15. By widening the distance between the chips 13, chipping during transportation and pickup can be suppressed.

For example, in the expanding step S109, the distance between the chips 13 is widened by radially stretching the adhesive tape 51 attached to the substrate 10 via the DAF 15. The stretched adhesive tape 51 can maintain the distance between the chips 13 while being widened.

In the mounting step S110, as shown in FIG. 11, the mounting portion 540 mounts the substrate 10 in which the distance between the chips 13 is widened is attached to the frame 59 via the DAF 15 and the adhesive tape 51. For example, in the mounting step S110, the mounting portion 52 mounted on the frame 59 of the adhesive tape 51 is held flat, and the adhesive tape 51 and the frame 59 are bonded together. Since the mounting portion 52 mounted on the frame 59 of the adhesive tape 51 does not loosen, the distance between the chips 13 can be maintained. As a result, as shown in FIG. 3, the substrate 10 is held by the frame 59 via the DAF 15 and the adhesive tape 51 in a state where the distance between the chips 13 is widened.

In the tape cutting step S111, the mount portion 540 attaches the frame 59 to the adhesive tape 51, and then cuts the excess portion 53 of the adhesive tape 51 that is not attached to the frame 59 with a cutter or the like.

In the cleaning step S112, as shown in FIG. 12, the cleaning unit 600 cleans the first main surface 11 of the substrate 10 from which the support substrate 41 has been peeled off. As a result, the adhesive layer 42 remaining on the first main surface 11 is removed.

In the unloading step S113, the transfer device 33 conveys the substrate 10 from the cleaning unit 600 to the transition unit 35, and then the transfer device 27 conveys the substrate 10 from the transition unit 35 to the cassette C on the mounting table 21. The transfer device 33 and the transfer device 27 hold the frame 59 and transfer the substrate 10. The cassette C is carried out from the mounting table 21. The substrate 10 carried out to the outside is picked up for each chip 13. In this way, the semiconductor device including the chip 13 and the DAF 15 is manufactured.

In the above substrate processing method, for example, when the chips 13 are not laminated, the DAF 15 is unnecessary, so that the DAF adhesion step S105 and the DAF division processing step S106 need not be performed. In this case, in the substrate 10 (see FIG. 2) processed by the substrate processing system 1, the DAF 15 is not provided between the adhesive tape 51 and the substrate 10 (chip 13), and the substrate 10 is passed through only the adhesive tape 51. It is attached to the frame 59.

Next, the effect of the substrate processing method according to the present embodiment will be described. The substrate processing method includes a support substrate bonding step S102 for adhering the support substrate 41 to the first main surface 11 on the side where the device layer 14 of the substrate 10 is formed, and a support substrate adhering step S102 for adhering the support substrate 41. The dicing step S103 for stealth dicing of the substrate 10 from the second main surface 12 on the side opposite to the first main surface 11 and the second main surface 12 of the substrate 10 for which stealth dicing was performed in the dicing step S103 are ground. It has a thinning step S104 for thinning the substrate 10.

Here, as a comparative example, consider, for example, a conventional substrate processing method as described in Patent Document 1. In the conventional substrate processing method, when the substrate 10 is thinned, the first main surface 11 of the substrate is protected by a protective tape. In connection with the thinning step S104 of the present embodiment illustrated in FIG. 5, the substrate 10 is placed on the chuck table 202 via the protective tape, and the second main surface 12 is ground.

In the configuration in which the device layer 14 of the first main surface 11 of the substrate 10 is protected by the protective tape in this way, the stealth dicing of the substrate 10 is first performed in the dicing step S103 as in the present embodiment, and then the thinning step. When the substrate 10 is thinned in S104, the rigidity of the protective tape that protects each chip 13 is low, so that the relative position of each chip 13 may fluctuate, resulting in poor processing stability. For example, in the plate thinning step S104, a processing stress acts on the substrate 10 in the plate thinning process, so that the plate is formed from the modified layer 16 (see FIG. 4) formed inside the substrate 10 by stealth dicing in the dicing step S103. Cracks grow in the thickness direction, and the substrate 10 is divided into a plurality of chips 13. At this time, since the protective tape holding each chip 13 from below is soft, the base of each chip 13 becomes unstable, and corner cracks are likely to occur in each chip 13. Further, in order to reduce the size of the chip 13, it is necessary to increase the number of modified layers 16 by stealth dicing in the dicing step S103, but since each modified layer 16 expands inside the substrate 10, the number is increased. If the amount is increased too much, the substrate 10 tends to bend and warp due to the expansion of the modified layer 16, and there is a possibility that the warp cannot be suppressed by the protective tape having low rigidity.

In this embodiment, the support substrate 41 is used instead of the conventional protective tape to protect the first main surface 11 of the substrate 10 against such a problem. Since the support substrate 41 is attached to the substrate 10 by an adhesive, a substrate made of a material having a higher rigidity than the conventional protective tape can be applied as the support substrate 41. Therefore, in the thinning step S104, as shown in FIG. 5, the second main surface 12 is ground in a state where the substrate 10 is placed on the support substrate 41 having higher rigidity than the conventional protective tape. As a result, even if the substrate 10 is divided into a plurality of chips 13 in the process of thinning the plate, each chip 13 is on a hard support substrate 41 and the base of each chip 13 is stable, so that each chip 13 has a corner crack. Can be suppressed. Further, even if the substrate 10 tries to warp due to the expansion of the modified layer 16 by stealth dicing in the dicing step S103 inside the substrate 10, the substrate 10 is placed on the support substrate 41 having higher rigidity than the conventional protective tape. Since dicing is performed in this state, the occurrence of warpage of the substrate 10 can be satisfactorily suppressed. From the above, the substrate processing method according to the present embodiment can improve the processing stability of the semiconductor device.

Further, in the substrate processing method of the present embodiment, after the support substrate 41 is peeled from the substrate 10 in the support substrate peeling step S108, the expanding step S109 and the mounting step S110 are performed. Even if the dicing step S103 or the plate thinning step S104 is performed while protecting the first main surface 11, the expanding step S109 and the mounting step S110 can be satisfactorily performed without being affected by the rigidity of the support substrate 41.

Further, the substrate processing method of the present embodiment is a DAF division processing step S106 that divides the DAF 15 attached to the substrate 10 along the boundary between the chips 13 after the DAF attachment step S105 and before the tape attachment step S107. I do. By dividing the DAF 15 in advance, it is possible to easily widen the distance between the plurality of chips 13 in the expanding step S109.

Further, in the substrate processing method of the present embodiment, a glass substrate made of glass is used as the support substrate 41. Since the glass substrate can transmit ultraviolet rays, it can be cured by ultraviolet rays without applying heat to the adhesive. Therefore, the formation of the adhesive layer 42 and the improvement or decrease of the adhesive strength after the formation of the adhesive layer can be carried out at room temperature. The adhesive layer may be heated to accelerate the curing of the adhesive.

[Modification example]
A modified example of the above embodiment will be described with reference to FIG. As shown in FIG. 14, the bump 14a may be provided on the device layer 14 formed on the first main surface 11 of the substrate 10.

In the conventional method described in Patent Document 1, a protective tape is attached from above the bump 14a. In this case, on the first main surface 11 of the substrate 10, the surface of the protective tape has irregularities depending on the presence or absence of the bumps 14a. Therefore, in the thinning step S104, the TTV (total sickness variation) of the second main surface 12 of the thinned substrate 10 deteriorates. For example, the portion of the substrate 10 having the bump 14a is easier to be ground than the portion without the bump 14a, and the unevenness after grinding becomes large. Further, since a gap is formed between the bumps 14a, the grinding liquid infiltrates between the bumps 14a during grinding, and the substrate 10 after grinding becomes dirty. Further, since the flatness of the surface of the protective tape is poor, there is a possibility that the substrate 10 may be poorly adsorbed in the thinning step S104, the dicing step S103, or the like.

In response to such a problem, in the modified example of the present embodiment, in the support substrate bonding step S102 shown in the flowchart of FIG. 13, the support substrate bonding portion 40 is the first main unit of the substrate 10 as shown in FIG. An adhesive is applied to the surface 11 to fill the gaps between the bumps 14a with the adhesive. Then, the adhesive layer 42 is formed larger than the height of the bump 14a to fill the unevenness of the device layer 14 and flatten the surface. The support substrate 41 is adhered to the substrate 10 by the adhesive layer 42.

With this configuration, the bumps 14a can be filled with an adhesive to flatten the surface of the device layer 14, so that the support substrate 41 can be satisfactorily adhered to the first main surface 11 of the substrate 10 without any gaps. As a result, in the thinning step S104, the TTV of the second main surface 12 of the thinned substrate 10 can be improved. Further, in the plate thinning step S104, it is possible to prevent the grinding fluid from entering between the bumps 14a during the grinding of the substrate 10, and it is possible to prevent the substrate 10 after grinding from becoming dirty. Further, since the support substrate 41, which is a glass substrate, comes into contact with the chuck table 202 instead of the conventional protective tape, it is possible to prevent the substrate 10 from being poorly adsorbed in the thinning step S104, the dicing step S103, or the like. Therefore, since the adhesive layer 42 can be formed flat without depending on the shape and size of the elements of the device layer 14, the support substrate 41 can be reliably adhered to the substrate 10.

The present embodiment has been described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. Those skilled in the art with appropriate design changes to these specific examples are also included in the scope of the present disclosure as long as they have the features of the present disclosure. Each element included in each of the above-mentioned specific examples, its arrangement, conditions, shape, etc. is not limited to the illustrated one, and can be changed as appropriate. The combinations of the elements included in each of the above-mentioned specific examples can be appropriately changed as long as there is no technical contradiction.

In the above embodiment, the configuration in which the substrate processing system 1 includes the support substrate adhesive portion 40, the dicing portion 100, and the thin plate portion 200 is illustrated, but the support substrate adhesive portion 40, the dicing portion 100, and the thin plate portion 200 are included in the substrate processing system. A device different from 1 may be used.

This international application claims priority based on Japanese patent application 2017-133017 filed on July 6, 2017, and the entire contents of 2017-133017 are incorporated herein by reference.

1 Substrate processing system 10 Substrate 11 1st main surface 12 2nd main surface 13 Chip 14 Device layer 14a Bump 15 DAF (Die Attach Film)
41 Support board 42 Adhesive layer 51 Adhesive tape 59 Frame S102 Support board Adhesive process S103 Dicing process S104 Thinning process S105 DAF adhesion process S106 DAF division processing process S107 Tape attachment process S108 Support substrate peeling process S109 Expanding process S110 Mounting process S111 Tape cutting Process S112 Cleaning process 40 Support substrate adhesive part 100 Dicing part 200 Thinning part 300 DAF adhesion part 400 DAF division processing part 510 Adhesive tape adhesion part 520 Support substrate peeling part 530 Expanding part 540 Mount part

Claims (10)

A support substrate bonding process for adhering a support substrate to the first main surface on the side where the device layer of the substrate is formed,
In the support substrate bonding step, a dicing step of forming a modified layer which is a starting point of fracture inside the substrate from a second main surface opposite to the first main surface to which the support substrate is adhered.
A thinning step of grinding the second main surface of the substrate on which the dicing step was performed to thin the substrate, and a thinning step of thinning the substrate.
A DAF adhesion step of adhering DAF (Die Attach Film) to the second main surface of the substrate which is thinned in the plate thinning step and adhered to the support substrate.
After the DAF attachment step, a DAF division processing step of dividing the DAF attached to the substrate, which is adhered to the support substrate along the boundary between a plurality of chips constituting the substrate, and a DAF division processing step.
A tape attachment step of attaching an adhesive tape to the DAF attached to the substrate, which is adhered to the support substrate,
After the tape attachment step, a support substrate peeling step of peeling the support substrate from the substrate,
Substrate processing method having. After the support substrate peeling step, an expanding step of widening the distance between a plurality of chips constituting the substrate on which the DAF is divided by stretching the adhesive tape.
A mounting step of mounting the substrate whose distance between the chips has been widened in the expanding step on the frame via the adhesive tape, and a mounting step of mounting the substrate on the frame.
The substrate processing method according to claim 1. In the DAF division processing step, the DAF is divided by irradiating the DAF with a laser beam.
The substrate processing method according to claim 1 or 2. After the mounting step, there is a tape cutting step of cutting the excess portion of the adhesive tape that is not attached to the frame.
The substrate processing method according to claim 2. After the mounting step, there is a cleaning step of cleaning the first main surface of the substrate from which the support substrate has been peeled off.
The substrate processing method according to claim 2. Bumps are provided on the first main surface of the substrate.
In the support substrate bonding step, an adhesive is applied to the first main surface of the substrate to form an adhesive layer larger than the height of the bump, and the support substrate is adhered to the substrate by the adhesive layer.
The substrate processing method according to any one of claims 1 to 5. A support substrate is adhered to the first main surface on the side where the device layer is formed, and a modified layer serving as a starting point of fracture is formed inside from the second main surface on the side opposite to the first main surface. For a substrate that has been thinned by grinding the second main surface after being broken, the support substrate is held, and DAF (Die Attach Film) is applied to the second main surface of the substrate that is adhered to the support substrate. DAF adhesive part to adhere and
Along a plurality of chip boundary between constituting the substrate of the DAF is attached at the DAF attachment, DAF division processing for dividing processing the DAF attached to the substrate being bonded to the support substrate Department and
An adhesive tape adhering portion for adhering an adhesive tape to the DAF adhering to the second main surface of the substrate adhered to the support substrate.
A transport device for transporting the substrate adhered to the support substrate between the DAF adhering portion, the DAF dividing processing portion, and the adhesive tape adhering portion.
A support substrate peeling portion for peeling the support substrate from the substrate to which the adhesive tape is attached at the adhesive tape attachment portion, and a support substrate peeling portion.
Substrate processing system. An expanding portion that widens the distance between a plurality of chips constituting the substrate from which the support substrate has been peeled off at the support substrate peeling portion by stretching the adhesive tape.
A mounting portion for mounting the substrate, whose distance between the chips is widened in the expanding portion, to the frame via the adhesive tape, and a mounting portion.
7. The substrate processing system according to claim 7. A supporting substrate bonded part for bonding the supporting substrate to the first major surface of said substrate,
A dicing portion that forms a modified layer that serves as a starting point of fracture from the second main surface of the substrate to which the support substrate is adhered at the support substrate adhesive portion to the inside of the substrate.
A thin plate portion for grinding the second main surface of the substrate on which the modified layer is formed in the dicing portion to thin the substrate, and a thin plate portion.
7. The substrate processing system according to claim 7 or 8. The DAF division processing unit irradiates the DAF with a laser beam to divide the DAF.
The substrate processing system according to any one of claims 7 to 9.

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