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JP6960232B2 - Lithography equipment and article manufacturing method - Google Patents
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JP6960232B2 - Lithography equipment and article manufacturing method - Google Patents

Lithography equipment and article manufacturing method Download PDF

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JP6960232B2
JP6960232B2 JP2017059686A JP2017059686A JP6960232B2 JP 6960232 B2 JP6960232 B2 JP 6960232B2 JP 2017059686 A JP2017059686 A JP 2017059686A JP 2017059686 A JP2017059686 A JP 2017059686A JP 6960232 B2 JP6960232 B2 JP 6960232B2
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substrate
unit
deformation
holding portion
amount
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JP2018163954A5 (en
JP2018163954A (en
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悠輔 田中
弘稔 鳥居
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Canon Inc
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Canon Inc
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Priority to KR1020180027893A priority patent/KR102309719B1/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825Mounting of individual elements, e.g. mounts, holders or supports
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

本発明は、リソグラフィ装置、および物品製造方法に関する。 The present invention relates to a lithographic apparatus and a method for manufacturing an article.

リソグラフィ工程において、原版や基板、あるいはそれらを保持する保持部に異物が付着した状態でパターン形成を行うと、基板に形成されるパターンに歪みや欠陥が生じうる。そのため、定期的あるいは状況に応じて基板保持部をクリーニングするなどの措置がとられる(例えば特許文献1)。 In the lithography process, if pattern formation is performed with foreign matter adhering to the original plate, the substrate, or the holding portion that holds them, distortion or defects may occur in the pattern formed on the substrate. Therefore, measures such as cleaning the substrate holding portion on a regular basis or depending on the situation are taken (for example, Patent Document 1).

特開2003−234265号公報Japanese Unexamined Patent Publication No. 2003-234265

異物対策をさらに進めることは、高精度なパターン形成性能を実現するための重要な要請である。かといって、クリーニングを無闇に増やしたのではスループット(生産性)が低下する。 Further promotion of foreign matter countermeasures is an important requirement for achieving highly accurate pattern formation performance. On the other hand, if the cleaning is increased indiscriminately, the throughput (productivity) will decrease.

本発明は、パターンの歪みや欠陥の抑制とスループットの両立に有利な技術を提供することを目的とする。 An object of the present invention is to provide a technique advantageous for suppressing pattern distortion and defects and achieving both throughput.

本発明の一側面に係るリソグラフィ装置は、基板の上にパターンを形成するリソグラフィ装置であって、前記基板を保持する基板保持部と、前記基板保持部による前記基板の保持力を調整する調整部と、前記基板の面外方向または面内方向の変形量を計測する計測部と、前記基板保持部により前記基板が保持された状態から前記調整部により前記保持力を弱めながら前記計測部により計測された前記変形量に基づいて前記基板保持部と前記基板との接触状態が前記基板保持部と前記基板との間に凝着が生じた異常であるか否かを判定する判定部とを有することを特徴とする。 The lithography device according to one aspect of the present invention is a lithography device that forms a pattern on a substrate, and is a substrate holding portion that holds the substrate and an adjusting unit that adjusts the holding force of the substrate by the substrate holding portion. The measuring unit measures the amount of deformation of the substrate in the out-of-plane direction or the in-plane direction, and the measuring unit measures the substrate while the substrate is held by the substrate holding unit while weakening the holding force by the adjusting unit. It has a determination unit for determining whether or not the contact state between the substrate holding portion and the substrate is an abnormality in which adhesion has occurred between the substrate holding portion and the substrate based on the amount of deformation. It is characterized by that.

本発明によれば、パターンの歪みや欠陥の抑制とスループットの両立に有利な技術を提供することができる。 According to the present invention, it is possible to provide a technique advantageous for suppressing pattern distortion and defects and achieving both throughput.

実施形態におけるインプリント装置の構成を示す図。The figure which shows the structure of the imprinting apparatus in embodiment. 実施形態におけるインプリント処理を示すフローチャート。The flowchart which shows the imprint processing in embodiment. 基板と基板保持部との凝着現象を説明する図。The figure explaining the sticking phenomenon of a substrate and a substrate holding part. 基板の面内方向の変形量を計測する方法を説明する図。The figure explaining the method of measuring the deformation amount in the in-plane direction of a substrate. 実施形態における洗浄装置と保管部を説明する図。The figure explaining the cleaning apparatus and the storage part in embodiment. 実施形態における凝着判定処理を説明する図。The figure explaining the adhesion determination process in an embodiment. 実施形態における凝着判定処理を説明する図。The figure explaining the adhesion determination process in an embodiment. 実施形態における凝着判定処理を含む歪み除去処理を示すフローチャート。The flowchart which shows the distortion removal process including the adhesion determination process in embodiment. 実施形態における物品製造方法を説明する図。The figure explaining the article manufacturing method in embodiment.

以下、図面を参照して本発明の実施形態について詳細に説明する。なお、本発明は以下の実施形態に限定されるものではなく、以下の実施形態は本発明の実施の具体例を示すにすぎない。また、以下の実施形態の中で説明されている特徴の組み合わせの全てが本発明の課題解決のために必須のものであるとは限らない。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and the following embodiments merely show specific examples of the embodiment of the present invention. In addition, not all combinations of features described in the following embodiments are essential for solving the problems of the present invention.

<第1実施形態>
本発明は、インプリント装置、露光装置、荷電粒子線描画装置等のリソグラフィ装置に適用できるが、以下の実施形態では、リソグラフィ装置の一例として、インプリント装置について説明する。まず、実施形態に係るインプリント装置の概要について説明する。インプリント装置は、基板上に供給されたインプリント材を型と接触させ、インプリント材に硬化用のエネルギーを与えることにより、型の凹凸パターンが転写された硬化物のパターンを形成する装置である。
<First Embodiment>
The present invention can be applied to a lithography apparatus such as an imprinting apparatus, an exposure apparatus, and a charged particle beam drawing apparatus, but in the following embodiments, the imprinting apparatus will be described as an example of the lithography apparatus. First, an outline of the imprinting apparatus according to the embodiment will be described. The imprint device is a device that forms a pattern of a cured product to which the uneven pattern of the mold is transferred by bringing the imprint material supplied on the substrate into contact with the mold and giving energy for curing to the imprint material. be.

インプリント材としては、硬化用のエネルギーが与えられることにより硬化する硬化性組成物(未硬化状態の樹脂と呼ぶこともある)が用いられる。硬化用のエネルギーとしては、電磁波、熱等が用いられうる。電磁波は、例えば、その波長が10nm以上1mm以下の範囲から選択される光、例えば、赤外線、可視光線、紫外線などでありうる。硬化性組成物は、光の照射により、あるいは、加熱により硬化する組成物でありうる。これらのうち、光の照射により硬化する光硬化性組成物は、少なくとも重合性化合物と光重合開始剤とを含有し、必要に応じて非重合性化合物または溶剤を更に含有してもよい。非重合性化合物は、増感剤、水素供与体、内添型離型剤、界面活性剤、酸化防止剤、ポリマー成分などの群から選択される少なくとも一種である。インプリント材は、インプリント材供給装置(不図示)により、液滴状、或いは複数の液滴が繋がってできた島状又は膜状となって基板上に配置されうる。インプリント材の粘度(25℃における粘度)は、例えば、1mPa・s以上100mPa・s以下でありうる。基板の材料としては、例えば、ガラス、セラミックス、金属、半導体、樹脂等が用いられうる。必要に応じて、基板の表面に、基板とは別の材料からなる部材が設けられてもよい。基板は、例えば、シリコン基板、化合物半導体基板、石英ガラスである。 As the imprint material, a curable composition (sometimes referred to as an uncured resin) that cures when energy for curing is applied is used. Electromagnetic waves, heat, etc. can be used as the energy for curing. The electromagnetic wave may be, for example, light whose wavelength is selected from the range of 10 nm or more and 1 mm or less, for example, infrared rays, visible rays, ultraviolet rays, and the like. The curable composition can be a composition that is cured by irradiation with light or by heating. Of these, the photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a non-polymerizable compound or a solvent, if necessary. The non-polymerizable compound is at least one selected from the group of sensitizers, hydrogen donors, internal release mold release agents, surfactants, antioxidants, polymer components and the like. The imprint material can be arranged on the substrate in the form of droplets or islands or films formed by connecting a plurality of droplets by an imprint material supply device (not shown). The viscosity of the imprint material (viscosity at 25 ° C.) can be, for example, 1 mPa · s or more and 100 mPa · s or less. As the material of the substrate, for example, glass, ceramics, metal, semiconductor, resin and the like can be used. If necessary, a member made of a material different from the substrate may be provided on the surface of the substrate. The substrate is, for example, a silicon substrate, a compound semiconductor substrate, or quartz glass.

図1は、本実施形態に係るインプリント装置1の構成を示す図である。このインプリント装置1は、物品としての半導体デバイスなどの製造に使用され、被処理基板である基板10上に型8を用いてインプリント材のパターンを形成する。なお、ここでは光硬化法を採用したインプリント装置1を例にして説明する。図1において、基板10上のインプリント材14に入射する紫外線9の光軸と平行にXYZ座標系におけるZ軸をとり、Z軸に垂直な平面内に互いに直交する方向にX軸およびY軸をとる。 FIG. 1 is a diagram showing a configuration of an imprint device 1 according to the present embodiment. This imprint device 1 is used for manufacturing a semiconductor device or the like as an article, and forms a pattern of an imprint material on a substrate 10 which is a substrate to be processed by using a mold 8. Here, the imprinting apparatus 1 adopting the photocuring method will be described as an example. In FIG. 1, the Z-axis in the XYZ coordinate system is taken parallel to the optical axis of the ultraviolet light 9 incident on the imprint material 14 on the substrate 10, and the X-axis and the Y-axis are orthogonal to each other in a plane perpendicular to the Z-axis. Take.

光照射部2は、インプリント処理の際に、型8および基板10に対して紫外線9を照射する。光照射部2は、不図示の光源と、光源から照射された紫外線9をインプリントに適切な光に調整する光学素子とを含みうる。紫外線9は、ダイクロイックミラー36bで反射され、型8および基板10へと導かれる。 The light irradiation unit 2 irradiates the mold 8 and the substrate 10 with ultraviolet rays 9 during the imprint processing. The light irradiation unit 2 may include a light source (not shown) and an optical element that adjusts the ultraviolet light 9 emitted from the light source to light suitable for imprinting. The ultraviolet light 9 is reflected by the dichroic mirror 36b and guided to the mold 8 and the substrate 10.

型8は、外周形状が矩形であり、基板10に対向する面には、例えば回路パターンなどの転写すべきパターンが形成されたパターン部8aを含む。また、型8の材質は、紫外線9を透過させることが可能な材質(例えば石英)である。さらに、型8は、後述するような形状補正部38による変形を容易とするために、紫外線9が照射される面に、平面形状が円形で、かつ、ある程度の深さを有するキャビティ(凹部)が形成された形状としてもよい。 The mold 8 has a rectangular outer peripheral shape, and the surface facing the substrate 10 includes a pattern portion 8a on which a pattern to be transferred such as a circuit pattern is formed. The material of the mold 8 is a material (for example, quartz) capable of transmitting ultraviolet rays 9. Further, in order to facilitate deformation by the shape correction unit 38 as described later, the mold 8 has a cavity (recess) having a circular planar shape and a certain depth on the surface irradiated with ultraviolet rays 9. May be formed.

型保持機構3は、まず、型8を保持する型保持部11と、この型保持部11を保持し、型8を移動させる型駆動機構12とを有する。型保持部11は、型8における紫外線9の照射面の外周領域を真空吸着圧や静電力により引き付けることで型8を保持し得る。例えば、型保持部11が真空吸着圧により型8を保持する場合には、型保持部11は、外部に設置された不図示の真空ポンプに接続され、この真空ポンプのON/OFFにより型8の脱着が切り替えられる。また、型保持部11および型駆動機構12は、光照射部2から照射された紫外線9が基板10に向かうように、中心部(内側)に開口領域13を有する。この開口領域13には、開口領域13の一部と型8とで囲まれる空間を密閉空間とする光透過部材41(例えば石英板)が設置され、真空ポンプなどを含む不図示の圧力調整装置により開口領域13内の空間圧力が調整される。圧力調整装置は、例えば、型8と基板10上のインプリント材14との接触に際して、空間内の圧力をその外部よりも高く設定することで、パターン部8aを基板10に向かい凸形に撓ませ、インプリント材14に対してパターン部8aの中心部から接触させ得る。これにより、パターン部8aとインプリント材14との間に気体が残留することを抑え、パターン部8aの凹凸部にインプリント材14を隅々まで充填させることができる。 First, the mold holding mechanism 3 has a mold holding portion 11 for holding the mold 8 and a mold driving mechanism 12 for holding the mold holding portion 11 and moving the mold 8. The mold holding portion 11 can hold the mold 8 by attracting the outer peripheral region of the ultraviolet ray 9 irradiation surface of the mold 8 by vacuum suction pressure or electrostatic force. For example, when the mold holding portion 11 holds the mold 8 by the vacuum suction pressure, the mold holding portion 11 is connected to a vacuum pump (not shown) installed outside, and the mold 8 is turned on / off by turning on / off the vacuum pump. Can be switched between attachment and detachment. Further, the mold holding unit 11 and the mold driving mechanism 12 have an opening region 13 in the central portion (inside) so that the ultraviolet rays 9 irradiated from the light irradiation unit 2 are directed toward the substrate 10. In the opening region 13, a light transmitting member 41 (for example, a quartz plate) having a space surrounded by a part of the opening region 13 and the mold 8 as a closed space is installed, and a pressure adjusting device (not shown) including a vacuum pump or the like is installed. Adjusts the spatial pressure in the opening region 13. The pressure adjusting device, for example, bends the pattern portion 8a toward the substrate 10 in a convex shape by setting the pressure in the space higher than the outside when the mold 8 comes into contact with the imprint material 14 on the substrate 10. No, the imprint material 14 can be brought into contact with the imprint material 14 from the central portion of the pattern portion 8a. As a result, it is possible to prevent gas from remaining between the pattern portion 8a and the imprint material 14, and to fill the uneven portion of the pattern portion 8a with the imprint material 14 to every corner.

型駆動機構12は、型8と基板10上のインプリント材14との接触または引き離しを選択的に行うように型8を各軸方向に移動させる。この型駆動機構12に採用可能なアクチュエータとしては、例えばリニアモータまたはエアシリンダがある。また、型8の高精度な位置決めに対応するために、粗動駆動系や微動駆動系などの複数の駆動系から構成されていてもよい。さらに、Z軸方向だけでなく、X軸方向やY軸方向、またはθ軸(Z軸周りの回転)方向の位置調整機能や、型8の傾きを補正するためのチルト機能などを有する構成もあり得る。なお、インプリント装置1における接触および引き離し動作は、型8をZ軸方向に移動させることで実現してもよいが、基板ステージ4をZ軸方向に移動させることで実現してもよく、または、その双方を相対的に移動させてもよい。 The mold drive mechanism 12 moves the mold 8 in each axial direction so as to selectively contact or separate the mold 8 from the imprint material 14 on the substrate 10. Examples of the actuator that can be adopted in the mold drive mechanism 12 include a linear motor and an air cylinder. Further, in order to support the highly accurate positioning of the mold 8, it may be composed of a plurality of drive systems such as a coarse movement drive system and a fine movement drive system. Further, there is also a configuration having a position adjustment function not only in the Z-axis direction but also in the X-axis direction, the Y-axis direction, or the θ-axis (rotation around the Z-axis) direction, and a tilt function for correcting the inclination of the mold 8. could be. The contacting and pulling operations in the imprinting apparatus 1 may be realized by moving the mold 8 in the Z-axis direction, or may be realized by moving the substrate stage 4 in the Z-axis direction. , Both may be moved relative to each other.

基板10は、例えば、単結晶シリコン基板やSOI(Silicon on Insulator)基板であり、この被処理面にはインプリント材14が塗布される。基板ステージ4は、基板10を保持し、型8と基板10上のインプリント材14との接触に際して、型8と基板10との位置合わせを実施する。この基板ステージ4は、基板10を保持する基板保持部16と、この基板保持部16を保持し、各軸方向に移動可能とするステージ駆動機構17とを有する。基板保持部16は、基板10を真空吸着圧や静電気力により保持し、保持力は制御部7からの指令により調整部58によって調整することができる。また、基板保持部16は基板10を吸着するだけではなく、基板10を吸着面側から部分的に加圧することができる。一方、ステージ駆動機構17に採用可能なアクチュエータとしては、例えばリニアモータや平面パルスモータがある。ステージ駆動機構17も、X軸およびY軸の各方向に対して、粗動駆動系や微動駆動系などの複数の駆動系から構成されていてもよい。さらに、Z軸方向の位置調整のための駆動系や、基板10のθ方向の位置調整機能、または基板10の傾きを補正するためのチルト機能などを有する構成もあり得る。 The substrate 10 is, for example, a single crystal silicon substrate or an SOI (Silicon on Insulator) substrate, and the imprint material 14 is applied to the surface to be treated. The substrate stage 4 holds the substrate 10 and aligns the mold 8 with the substrate 10 when the mold 8 comes into contact with the imprint material 14 on the substrate 10. The substrate stage 4 has a substrate holding portion 16 that holds the substrate 10 and a stage driving mechanism 17 that holds the substrate holding portion 16 and makes it movable in each axial direction. The substrate holding unit 16 holds the substrate 10 by vacuum suction pressure or electrostatic force, and the holding force can be adjusted by the adjusting unit 58 by a command from the control unit 7. Further, the substrate holding portion 16 can not only adsorb the substrate 10 but also partially pressurize the substrate 10 from the suction surface side. On the other hand, examples of the actuator that can be adopted in the stage drive mechanism 17 include a linear motor and a flat pulse motor. The stage drive mechanism 17 may also be composed of a plurality of drive systems such as a coarse movement drive system and a fine movement drive system in each of the X-axis and Y-axis directions. Further, there may be a configuration having a drive system for adjusting the position in the Z-axis direction, a position adjusting function in the θ direction of the substrate 10, a tilt function for correcting the inclination of the substrate 10, and the like.

また、基板ステージ4は、その側面に、X、Y、Z、ωx、ωy、ωzの各方向に対応した複数の参照ミラー18を備える。ここで、ωx、ωy、ωzはそれぞれX軸、Y軸、Z軸周りの回転方向を表す。これに対して、インプリント装置1は、これらの参照ミラー18にそれぞれビームを照射することで、基板ステージ4の位置を測定する複数のレーザー干渉計19(測長器)を備える。レーザー干渉計19は、基板ステージ4の位置を実時間で計測し、制御部7は、その計測値に基づいて基板ステージ4(すなわち、基板10)の位置決め制御を実行する。 Further, the substrate stage 4 is provided with a plurality of reference mirrors 18 corresponding to each direction of X, Y, Z, ωx, ωy, and ωz on its side surface. Here, ωx, ωy, and ωz represent the rotation directions around the X-axis, Y-axis, and Z-axis, respectively. On the other hand, the imprint device 1 includes a plurality of laser interferometers 19 (length measuring instruments) that measure the position of the substrate stage 4 by irradiating each of these reference mirrors 18 with a beam. The laser interferometer 19 measures the position of the substrate stage 4 in real time, and the control unit 7 executes positioning control of the substrate stage 4 (that is, the substrate 10) based on the measured value.

供給部5は、基板10上に未硬化状態のインプリント材14を供給する。なお、インプリント材14は、紫外線9を受光することにより硬化する性質を有する組成物であり、半導体デバイス製造工程などの各種条件により適宜選択されうる。また、供給部5から供給されるインプリント材14の量も、基板10上に形成されるインプリント材14の所望の厚さや、形成されるパターンの密度などにより適宜決定されうる。 The supply unit 5 supplies the uncured imprint material 14 onto the substrate 10. The imprint material 14 is a composition having a property of being cured by receiving ultraviolet rays 9, and can be appropriately selected depending on various conditions such as a semiconductor device manufacturing process. Further, the amount of the imprint material 14 supplied from the supply unit 5 can also be appropriately determined depending on the desired thickness of the imprint material 14 formed on the substrate 10, the density of the formed pattern, and the like.

形状補正部38は、型保持部11に保持された型8の側面に外力を印加する不図示の外力印加部を備え、制御部7からの指令により、パターン部8aの形状を変形することができる。また、本実施形態のインプリント装置1は、基板加熱部37を備える。基板加熱部37は不図示の光源部を含み、この光源部からの光は、ダイクロイックミラー36aで反射し、ダイクロイックミラー36bを透過して、基板10に照射される。この光の照射エネルギーによる熱によって基板を加熱し、それにより基板を変形させることができる。 The shape correction unit 38 includes an external force application unit (not shown) that applies an external force to the side surface of the mold 8 held by the mold holding unit 11, and can deform the shape of the pattern unit 8a by a command from the control unit 7. can. Further, the imprint device 1 of the present embodiment includes a substrate heating unit 37. The substrate heating unit 37 includes a light source unit (not shown), and the light from the light source unit is reflected by the dichroic mirror 36a, passes through the dichroic mirror 36b, and irradiates the substrate 10. The substrate can be heated by the heat generated by the irradiation energy of the light, thereby deforming the substrate.

また、インプリント装置1は、インプリント処理に際し、基板10上に存在し、図4に示す被処理部となるショット領域20の形状またはサイズを計測するアライメント計測を行うためのアライメント計測部6を備える。アライメント計測部6から照射されるアライメント光35は、ダイクロイックミラー36aおよび36bを透過し、パターン部8aおよび基板10のショット領域20上に形成された不図示のアライメントマークに照射される。これらのアライメントマークで反射したアライメント光35は、アライメント計測部6で受光され、パターン部8aと基板10上のショット領域20との相対位置が計測される。 Further, the imprint device 1 includes an alignment measurement unit 6 for measuring the shape or size of the shot region 20 which is present on the substrate 10 and is the portion to be processed shown in FIG. 4 during the imprint processing. Be prepared. The alignment light 35 emitted from the alignment measurement unit 6 passes through the dichroic mirrors 36a and 36b and irradiates the alignment mark (not shown) formed on the pattern unit 8a and the shot region 20 of the substrate 10. The alignment light 35 reflected by these alignment marks is received by the alignment measurement unit 6, and the relative position between the pattern unit 8a and the shot region 20 on the substrate 10 is measured.

制御部7は、インプリント装置1に含まれる各構成要素の動作、および調整などを制御し得る。制御部7は、例えばCPUおよびメモリを含むコンピュータ装置で構成されうる。制御部7は、インプリント装置1の各構成要素に回線を介して接続され、プログラムなどに従って各構成要素の制御を実行し得る。本実施形態の制御部7は、少なくとも型保持機構3、基板ステージ4、基板保持部16、形状補正部38、光照射部2、アライメント計測部6の動作を制御する。なお、制御部7は、インプリント装置1の他の部分と一体(共通の筐体内に)で構成されていてもよいし、インプリント装置1の他の部分とは別体(別の筐体内に)で構成されていてもよい。 The control unit 7 can control the operation, adjustment, and the like of each component included in the imprint device 1. The control unit 7 may be composed of, for example, a computer device including a CPU and a memory. The control unit 7 is connected to each component of the imprint device 1 via a line, and can execute control of each component according to a program or the like. The control unit 7 of the present embodiment controls at least the operations of the mold holding mechanism 3, the substrate stage 4, the substrate holding unit 16, the shape correction unit 38, the light irradiation unit 2, and the alignment measurement unit 6. The control unit 7 may be integrally formed with other parts of the imprint device 1 (in a common housing), or may be separate from the other parts of the imprint device 1 (in a separate housing). It may be composed of).

また、インプリント装置1は、基板ステージ4を載置するベース定盤27と、型保持機構3を支持するブリッジ定盤28と、ベース定盤27から延設され、除振器29を介してブリッジ定盤28を支持するための支柱30とを備える。除振器29は、床面からブリッジ定盤28へ伝わる振動を除去する。さらに、インプリント装置1は、共に不図示であるが、型8を装置外部から型保持機構3へ搬送する型搬送機構や、基板10を装置外部から基板ステージ4へ搬送する基板搬送機構などを含み得る。 Further, the imprint device 1 extends from the base surface plate 27 on which the substrate stage 4 is placed, the bridge surface plate 28 that supports the mold holding mechanism 3, and the base surface plate 27, and is extended via the vibration isolator 29. A support column 30 for supporting the bridge surface plate 28 is provided. The vibration isolator 29 removes vibration transmitted from the floor surface to the bridge surface plate 28. Further, although not shown, the imprint device 1 includes a mold transfer mechanism for transporting the mold 8 from the outside of the device to the mold holding mechanism 3, a substrate transport mechanism for transporting the substrate 10 from the outside of the device to the substrate stage 4, and the like. Can include.

次に、インプリント装置1によるインプリント処理について、図2を用いて説明する。まず、制御部7は、不図示の基板搬送機構を制御して、インプリント装置1内に基板10を搬入し、基板ステージ4上の基板保持部16に基板10を載置する(S101)。 Next, the imprint process by the imprint device 1 will be described with reference to FIG. First, the control unit 7 controls a substrate transfer mechanism (not shown) to carry the substrate 10 into the imprint device 1 and place the substrate 10 on the substrate holding portion 16 on the substrate stage 4 (S101).

制御部7は、基板保持部16を制御して基板10を保持する。ここで、基板10と基板保持部16との間には、温度差がありうる。温度差がある状態で基板10を基板保持部16に保持した場合、基板10と基板保持部16との間の熱伝導により基板10に歪みが生じうる。基板10に発生した歪みは、重ね合わせ誤差を増大させる要因となるため、除去する必要がある。そこで、S102で、制御部7は歪み除去処理を行う。この歪み除去処理において、制御部7は、基板10と基板保持部16との間の熱伝導が収束しうるものとして予め定めた時間待機した後、基板保持部16の吸着圧(保持力)を一旦解放する。これにより基板10の歪みが解放される。その後、制御部7は再び基板保持部16の吸着圧を基板10を保持するための圧力に戻す。こうすることで、基板10に発生した歪みを除去し、重ね合わせ誤差の増大を防ぐことができる。 The control unit 7 controls the substrate holding unit 16 to hold the substrate 10. Here, there may be a temperature difference between the substrate 10 and the substrate holding portion 16. When the substrate 10 is held by the substrate holding portion 16 in a state where there is a temperature difference, the substrate 10 may be distorted due to heat conduction between the substrate 10 and the substrate holding portion 16. The strain generated on the substrate 10 causes an increase in the overlay error, and therefore needs to be removed. Therefore, in S102, the control unit 7 performs a distortion removing process. In this strain removing process, the control unit 7 waits for a predetermined time so that the heat conduction between the substrate 10 and the substrate holding unit 16 can converge, and then applies the adsorption pressure (holding force) of the substrate holding unit 16. Release once. As a result, the distortion of the substrate 10 is released. After that, the control unit 7 returns the suction pressure of the substrate holding unit 16 to the pressure for holding the substrate 10 again. By doing so, it is possible to remove the distortion generated in the substrate 10 and prevent an increase in the overlay error.

その後、制御部7は、ステージ駆動機構17を制御して、基板10上のパターンを形成する領域が供給部5の下に位置するよう基板ステージ4を搬送し、供給部5を制御してインプリント材14を該領域に供給する(S103)。次に、制御部7は、ステージ駆動機構17を制御して、基板10上のパターンを形成する領域(ショット領域)がパターン部8aの下に位置するよう基板ステージ4を搬送する(S104)。 After that, the control unit 7 controls the stage drive mechanism 17 to convey the substrate stage 4 so that the region forming the pattern on the substrate 10 is located below the supply unit 5, and controls the supply unit 5 to enter. The printing material 14 is supplied to the region (S103). Next, the control unit 7 controls the stage drive mechanism 17 to convey the substrate stage 4 so that the region (shot region) forming the pattern on the substrate 10 is located below the pattern portion 8a (S104).

次に、制御部7は、型駆動機構12を制御して、基板10上のインプリント材14に型8のパターン部8aを接触させる(S105)。この接触により、インプリント材14が、パターン部8aの凹凸部に充填される。 Next, the control unit 7 controls the mold drive mechanism 12 to bring the pattern portion 8a of the mold 8 into contact with the imprint material 14 on the substrate 10 (S105). By this contact, the imprint material 14 is filled in the uneven portion of the pattern portion 8a.

次に、制御部7は、アライメント計測部6を制御してアライメント計測を行う。例えば、パターン部8aには、図4に示すようにマーク52が形成されており、アライメント計測部6は、このマーク52と基板10上に存在するショット領域20に形成されたマーク51との相対位置や形状差などを計測する。図4は、マーク51とマーク52が面内方向に離れている場合について示している。しかし、マークの形態はこれに限られず、ピッチが異なる回折格子からなるマーク51とマーク52を重ねてモアレ縞を発生させて、そのモアレ縞の位相から相対位置を検出する方式でもよい。制御部7は、アライメント計測の結果に基づいて、パターン部8aとショット領域20との相対位置をシフト成分および回転成分に分解し、ステージ駆動機構17により、位置合わせを行う。また、制御部7は、パターン部8aとショット領域20との形状差(倍率差など)を低減するように、パターン部8aの形状を変形させるための形状補正部38及びショット領域20の形状を変形させるための基板加熱部37の制御を行う(S106)。このとき、形状補正部38もしくは基板加熱部37のいずれか一方のみを用いて制御を行ってもよい。 Next, the control unit 7 controls the alignment measurement unit 6 to perform the alignment measurement. For example, a mark 52 is formed in the pattern portion 8a as shown in FIG. 4, and the alignment measurement unit 6 is relative to the mark 52 and the mark 51 formed in the shot region 20 existing on the substrate 10. Measure the position and shape difference. FIG. 4 shows a case where the mark 51 and the mark 52 are separated from each other in the in-plane direction. However, the form of the mark is not limited to this, and a method may be used in which the mark 51 and the mark 52 made of diffraction gratings having different pitches are overlapped to generate moire fringes, and the relative position is detected from the phase of the moire fringes. Based on the result of the alignment measurement, the control unit 7 decomposes the relative position between the pattern unit 8a and the shot region 20 into a shift component and a rotation component, and aligns the position by the stage drive mechanism 17. Further, the control unit 7 determines the shapes of the shape correction unit 38 and the shot area 20 for deforming the shape of the pattern unit 8a so as to reduce the shape difference (magnification difference, etc.) between the pattern unit 8a and the shot area 20. The substrate heating unit 37 for deformation is controlled (S106). At this time, control may be performed using only one of the shape correction unit 38 and the substrate heating unit 37.

パターン部8aとショット領域20との形状補正が完了すると、制御部7は、光照射部2から紫外線9を照射させ、型8を透過した紫外線9によりインプリント材14を硬化させる(S107)。そして、インプリント材14が硬化した後に、制御部7は、型駆動機構12を制御して、型8をインプリント材14から引き離す(離型)(S108)。これにより、基板10上のショット領域20の表面には、パターン部8aの凹凸部にならった3次元形状のインプリント材14のパターン(層)が形成される。その後、基板ステージ4は、次にパターン形成を行うショット領域に、インプリント材14を供給するために、供給部5の下へ基板10を搬送する(S109)。 When the shape correction of the pattern portion 8a and the shot region 20 is completed, the control unit 7 irradiates the ultraviolet light 9 from the light irradiation unit 2 and cures the imprint material 14 with the ultraviolet light 9 transmitted through the mold 8 (S107). Then, after the imprint material 14 is cured, the control unit 7 controls the mold drive mechanism 12 to separate the mold 8 from the imprint material 14 (release) (S108). As a result, a pattern (layer) of the three-dimensional imprint material 14 that follows the uneven portion of the pattern portion 8a is formed on the surface of the shot region 20 on the substrate 10. After that, the substrate stage 4 conveys the substrate 10 under the supply unit 5 in order to supply the imprint material 14 to the shot region where the pattern is formed next (S109).

このような一連のインプリント動作を、基板ステージ4の駆動によりパターン形成領域(ショット領域)を変更しながら繰り返すことで、基板10上の複数のショット領域インプリント材のパターンを形成することができる。基板10上の複数のショット領域にインプリント材のパターンが形成された後、制御部7は不図示の基板搬送機構を制御して基板10を搬出する(S110)。 By repeating such a series of imprinting operations while changing the pattern forming region (shot region) by driving the substrate stage 4, it is possible to form a pattern of a plurality of shot region imprinting materials on the substrate 10. .. After the imprint material pattern is formed in the plurality of shot regions on the substrate 10, the control unit 7 controls a substrate transport mechanism (not shown) to carry out the substrate 10 (S110).

インプリント装置1においては、図3に示されるように、基板10と基板保持部16との間に異物54が混入する可能性がある。異物混入の経路は種々考えられる。例えば、基板10が複数の半導体プロセスを経てきている場合、いずれかの工程で、基板10の裏面に樹脂(インプリント材やレジスト)等の異物54が付着する可能性がある。また、基板10を搬送するためのカセット内に基板10が保管されている場合、基板10の表面に形成された膜(有機物)から脱ガスが発生し、その脱ガスが、カセット内に保管されている基板10の表面または裏面に異物54として付着する可能性もある。あるいは、インプリント装置1はS103で、装置内でインプリント材14を供給するため、インプリント材14の揮発成分が装置内に充満し、基板保持部16の表面に異物54として付着する可能性もある。 In the imprint device 1, as shown in FIG. 3, foreign matter 54 may be mixed between the substrate 10 and the substrate holding portion 16. There are various possible routes for foreign matter to be mixed. For example, when the substrate 10 has undergone a plurality of semiconductor processes, foreign matter 54 such as resin (imprint material or resist) may adhere to the back surface of the substrate 10 in any of the steps. Further, when the substrate 10 is stored in the cassette for transporting the substrate 10, degassing occurs from the film (organic substance) formed on the surface of the substrate 10, and the degassing is stored in the cassette. There is also a possibility that foreign matter 54 adheres to the front surface or the back surface of the substrate 10. Alternatively, since the imprint device 1 supplies the imprint material 14 in the device in S103, the volatile components of the imprint material 14 may fill the device and adhere to the surface of the substrate holding portion 16 as foreign matter 54. There is also.

このような異物54を挟んで基板保持部16が基板10を保持した場合、S102の歪み除去処理において両者の熱伝導が収束しうる所定時間待機している間に、基板10と基板保持部16とが異物54によって凝着する凝着現象を引き起こす場合がある。基板10と基板保持部16との間で凝着現象が発生すると、基板10が基板保持部16の水平平面内で拘束されるため、S102において基板10の歪みの解放が阻害されうる。基板10の歪みの解放が十分に行われない場合、重ね合わせ誤差が増大し、デバイス不良を引き起こす可能性が高まる。 When the substrate holding portion 16 holds the substrate 10 with such a foreign matter 54 sandwiched between them, the substrate 10 and the substrate holding portion 16 wait for a predetermined time during which the heat conduction between the two can converge in the strain removing process of S102. And may cause an adhesion phenomenon in which foreign matter 54 adheres. When the adhesion phenomenon occurs between the substrate 10 and the substrate holding portion 16, the substrate 10 is restrained in the horizontal plane of the substrate holding portion 16, so that the release of the strain of the substrate 10 can be hindered in S102. If the distortion of the substrate 10 is not sufficiently released, the overlay error increases and the possibility of causing device failure increases.

本実施形態において、制御部7は、歪み除去処理の中で、調整部58により保持力を弱めながら計測される基板10の変形量の変化に基づいて基板保持部16と基板10との接触状態が正常か否かを判定する判定部として機能しうる。上述のような凝着は、接触状態(保持状態)の異常であるとして判定される。従来の手法では、基板保持部に基板が保持された状態で異物やその凝着の検出を行うことはできなかった。以下、基板保持部16と基板10との接触状態が正常か否かを判定する処理の例として、基板10と基板保持部16との間の凝着の有無を判定する凝着判定処理を詳しく説明する。 In the present embodiment, the control unit 7 is in contact with the substrate 10 based on a change in the amount of deformation of the substrate 10 measured while weakening the holding force by the adjusting unit 58 during the strain removing process. Can function as a determination unit for determining whether or not is normal. Adhesion as described above is determined to be an abnormality in the contact state (holding state). With the conventional method, it is not possible to detect foreign matter and its adhesion while the substrate is held by the substrate holding portion. Hereinafter, as an example of a process for determining whether or not the contact state between the substrate holding portion 16 and the substrate 10 is normal, the adhesion determination process for determining the presence or absence of adhesion between the substrate 10 and the substrate holding portion 16 will be described in detail below. explain.

本実施形態において、凝着判定処理は例えば、S102の歪み除去処理の中で行われうる。図8に、凝着判定処理を含むS102の歪み除去処理のフローチャートを示す。制御部7は、基板保持部16を制御して基板10の保持力(吸着圧)を、基板10を保持するための値に設定する(S201)。これにより基板10が基板保持部16に保持される。その後、基板10と基板保持部16との間の温度差が低減されるよう所定時間待機する(S202)。 In the present embodiment, the adhesion determination process can be performed, for example, in the distortion removing process of S102. FIG. 8 shows a flowchart of the distortion removing process of S102 including the adhesion determination process. The control unit 7 controls the substrate holding unit 16 to set the holding force (adsorption pressure) of the substrate 10 to a value for holding the substrate 10 (S201). As a result, the substrate 10 is held by the substrate holding portion 16. After that, it waits for a predetermined time so that the temperature difference between the substrate 10 and the substrate holding portion 16 is reduced (S202).

次に、制御部7は、調整部58に基板保持部16による基板の保持力を一定量低減させ(S203)、その都度、基板10の表面に沿った方向(面内方向)と直交する方向(面外方向)の変形量を計測する(S204)。このとき、例えばアライメント計測部6、高倍率アライメントスコープ55、あるいは高さセンサ56を、この変形量を計測する計測部として用いることができる。すなわち、面外方向の変形量の計測は、例えばアライメント計測部6におけるフォーカスのずれ量に基づき算出することにより行われうる。あるいは、基板10のマークを検出するための高倍率アライメントスコープ55のフォーカスのずれ量に基づいて算出してもよいし、基板10の高さセンサ56としてレーザー干渉計等の測長器を搭載して計測してもよい。 Next, the control unit 7 causes the adjusting unit 58 to reduce the holding force of the substrate by the substrate holding unit 16 by a certain amount (S203), and each time, the direction orthogonal to the direction along the surface of the substrate 10 (in-plane direction). The amount of deformation (out-of-plane direction) is measured (S204). At this time, for example, the alignment measurement unit 6, the high magnification alignment scope 55, or the height sensor 56 can be used as the measurement unit for measuring the amount of deformation. That is, the amount of deformation in the out-of-plane direction can be measured, for example, by calculating based on the amount of focus shift in the alignment measuring unit 6. Alternatively, it may be calculated based on the amount of focus shift of the high-magnification alignment scope 55 for detecting the mark on the substrate 10, or a length measuring device such as a laser interferometer is mounted as the height sensor 56 of the substrate 10. May be measured.

図6は、基板保持部16の吸着圧を変化させたときの基板10の面外方向の変形量の変化の例を示すグラフである。図6において、横軸は基板の吸着圧(すなわち基板保持部16により基板を保持する保持力)を示しており、吸着圧が低くなるほど(すなわち左方向にいくほど)保持力が強くなり、吸着圧が高くなるほど(右方向にいくほど)保持力が弱くなる。 FIG. 6 is a graph showing an example of a change in the amount of deformation of the substrate 10 in the out-of-plane direction when the suction pressure of the substrate holding portion 16 is changed. In FIG. 6, the horizontal axis indicates the suction pressure of the substrate (that is, the holding force for holding the substrate by the substrate holding portion 16), and the lower the suction pressure (that is, the more to the left), the stronger the holding force and the suction. The higher the pressure (to the right), the weaker the holding force.

基板保持部16による基板の保持力を弱めていく(横軸の右方向にいく)場合、曲線Aのように、ある保持力で基板10は基板保持部16から浮き上がり、面外方向の変形が生じるようになる。しかし、基板10と基板保持部16との間で凝着が起きていると、その保持力では基板10は浮かず、曲線Bのように、保持力をさらに弱めないと基板10は浮かない。 When the holding force of the substrate by the substrate holding portion 16 is weakened (going to the right on the horizontal axis), the substrate 10 is lifted from the substrate holding portion 16 by a certain holding force as shown in curve A, and the substrate 10 is deformed in the out-of-plane direction. Will occur. However, if adhesion occurs between the substrate 10 and the substrate holding portion 16, the substrate 10 does not float due to the holding force, and the substrate 10 does not float unless the holding force is further weakened as shown in curve B.

そこで、制御部7は、S203で保持力を弱めながら、調整部58により保持力が通常の基板の浮き上がり開始点の保持力またはそれよりも若干弱い保持力である所定値Fになったかを監視している(S205)。保持力が所定値Fになった時点で、制御部7は、基板の面外方向の変形量がしきい値THを超えているか否かを判定する(S206)。しきい値THは、面外方向の変形量により基板10の基板保持部16からの浮き上がりを判定するための値に設定され、例えば制御部7内のメモリに記憶されている。ここで変形量がしきい値THを超えていなければ、制御部7は、基板保持部16と基板10との接触状態が異常である(凝着が発生している)と判定する。この場合、制御部7は、基板保持部16のメンテナンスを促す警告を出力し(S210)、処理を停止する(S211)。 Therefore, while weakening the holding force in S203, the control unit 7 monitors whether the holding force reaches a predetermined value F, which is a holding force at the starting point of the normal floating of the substrate or a holding force slightly weaker than that, by the adjusting unit 58. (S205). When the holding force reaches a predetermined value F, the control unit 7 determines whether or not the amount of deformation of the substrate in the out-of-plane direction exceeds the threshold value TH (S206). The threshold value TH is set to a value for determining the lift of the substrate 10 from the substrate holding unit 16 based on the amount of deformation in the out-of-plane direction, and is stored in, for example, a memory in the control unit 7. Here, if the amount of deformation does not exceed the threshold value TH, the control unit 7 determines that the contact state between the substrate holding unit 16 and the substrate 10 is abnormal (adhesion has occurred). In this case, the control unit 7 outputs a warning prompting maintenance of the board holding unit 16 (S210) and stops the process (S211).

一方、基板の面外方向の変形量がしきい値THを超えていれば、制御部7は歪み除去処理を進めるべく、保持力を更に弱めていく(S207)。そして、保持力が所定の下限値を下回ったかを確認し(S208)、下限値を下回った時点で、保持力を基板10を保持するための元の値(S201の値)に戻す(S209)。 On the other hand, if the amount of deformation of the substrate in the out-of-plane direction exceeds the threshold value TH, the control unit 7 further weakens the holding force in order to proceed with the strain removing process (S207). Then, it is confirmed whether the holding force is below the predetermined lower limit value (S208), and when it is below the lower limit value, the holding force is returned to the original value (value of S201) for holding the substrate 10 (S209). ..

その他の方法として、基板の面外方向の変形量がしきい値THを超えたときの基板の保持力が所定値Fより弱ければ、制御部7は、基板保持部16と基板10との接触状態が異常である(凝着が発生している)と判定してもよい。基板保持部16に保持される基板10は、成膜工程やエッチング工程などの半導体プロセスを経る過程で残留応力により反りが発生している可能性がある。基板10に生じている反りにより基板10の面外方向の変形量は変化するため、しきい値THは基板10の反りを考慮して設定されるとよい。 As another method, if the holding force of the board when the amount of deformation of the board in the out-of-plane direction exceeds the threshold value TH is weaker than the predetermined value F, the control unit 7 makes contact between the board holding unit 16 and the board 10. It may be determined that the state is abnormal (adhesion has occurred). The substrate 10 held by the substrate holding portion 16 may be warped due to residual stress in a process of undergoing a semiconductor process such as a film forming process or an etching process. Since the amount of deformation of the substrate 10 in the out-of-plane direction changes depending on the warp generated in the substrate 10, the threshold value TH may be set in consideration of the warp of the substrate 10.

基板保持部16のメンテナンスを促す警告が発せられた場合、基板保持部16の表面に異物が付着している可能性が高いため、基板保持部16は洗浄工程に回される。基板保持部16の洗浄は、例えば、図5に示すようなインプリント装置1に隣接する洗浄装置71によって行われる。この場合、メンテナンス対象の基板保持部16は搬送ロボット61によって洗浄装置71へ搬送される。洗浄は、異物の物性によって、超音波洗浄、脱脂洗浄、機械洗浄等から適宜選択されうる。洗浄装置71による洗浄により、基板保持部16に付着した異物が除去され、基板10と基板保持部16との間で発生する凝着現象を防ぐことができ、これにより重ね合わせ誤差の増加が抑えられる。なお、洗浄装置71はインプリント装置1内に設けられていてもよいし、インプリント装置1の外部に設けられていてもよい。また、基板保持部16のメンテナンスを促す警告は音声による報知でもよいし、表示部による表示でもよいし、またはその両方であってもよい。 When a warning prompting maintenance of the substrate holding portion 16 is issued, there is a high possibility that foreign matter is attached to the surface of the substrate holding portion 16, so that the substrate holding portion 16 is sent to the cleaning step. The substrate holding portion 16 is cleaned by, for example, a cleaning device 71 adjacent to the imprint device 1 as shown in FIG. In this case, the substrate holding portion 16 to be maintained is conveyed to the cleaning device 71 by the transfer robot 61. The cleaning can be appropriately selected from ultrasonic cleaning, degreasing cleaning, mechanical cleaning and the like, depending on the physical characteristics of the foreign matter. By cleaning with the cleaning device 71, foreign matter adhering to the substrate holding portion 16 is removed, and the adhesion phenomenon that occurs between the substrate 10 and the substrate holding portion 16 can be prevented, thereby suppressing an increase in overlay error. Be done. The cleaning device 71 may be provided inside the imprint device 1 or may be provided outside the imprint device 1. Further, the warning prompting the maintenance of the board holding unit 16 may be a voice notification, a display by the display unit, or both.

上述の説明では、凝着判定処理はS102の歪み除去処理の中で行われるものとして説明したが、S102の歪み除去処理とは独立に行うようにしてもよい。S102の歪み除去処理には基板の保持力を弱める工程が含まれるので、それを利用して凝着判定処理も併せて行うことは、スループットの低下を招かない点で有利である。また、凝着判定処理は、基板10の全箇所を行うようにしてもよいし、代表的に特定の箇所だけを行うようにしてもよい。また、凝着判定処理は、ロット内の全基板に対して行うようにしてもよいし、特定の基板だけに対して行うようにしてもよい。 In the above description, the adhesion determination process has been described as being performed in the distortion removing process of S102, but it may be performed independently of the distortion removing process of S102. Since the strain removing process of S102 includes a step of weakening the holding force of the substrate, it is advantageous to perform the adhesion determination process together with the step of weakening the holding force of the substrate in that the throughput is not lowered. Further, the adhesion determination process may be performed on all the parts of the substrate 10, or may be typically performed only on a specific part. Further, the adhesion determination process may be performed on all the substrates in the lot, or may be performed only on a specific substrate.

<第2実施形態>
第1実施形態では、基板10の面外方向の変形量の計測結果に基づいて凝着の判定を行ったが、本実施形態では、基板10の表面に沿った方向(面内方向)の変形量の計測結果に基づいて凝着の判定を行う。図7は、基板保持部16の吸着圧を変化させたときの基板10の面内方向の変形量の変化の例を示すグラフである。図7の横軸は、図6と同様、基板の吸着圧(すなわち基板保持部が基板を保持する保持力)を示しており、吸着圧が低くなるほど(すなわち左方向にいくほど)保持力が強くなり、吸着圧が高くなるほど(右方向にいくほど)保持力が弱くなる。
<Second Embodiment>
In the first embodiment, the adhesion was determined based on the measurement result of the amount of deformation of the substrate 10 in the out-of-plane direction, but in the present embodiment, the deformation in the direction along the surface of the substrate 10 (in-plane direction). Adhesion is determined based on the measurement result of the amount. FIG. 7 is a graph showing an example of a change in the amount of deformation of the substrate 10 in the in-plane direction when the suction pressure of the substrate holding portion 16 is changed. Similar to FIG. 6, the horizontal axis of FIG. 7 indicates the suction pressure of the substrate (that is, the holding force that the substrate holding portion holds the substrate), and the lower the suction pressure (that is, the more to the left), the stronger the holding force. It becomes stronger, and the higher the suction pressure (to the right), the weaker the holding force.

基板保持部16による基板の保持力を弱めていく(横軸の右方向にいく)場合、曲線Cのように、ある保持力で基板10は基板保持部16から受ける摩擦力が低下することで滑りが生じ、面内方向の変形が生じるようになる。しかし、基板10と基板保持部16との間で凝着が起きていると、その保持力では、基板10の滑りは生じず、曲線Dのように、保持力をさらに弱めないと基板10の滑りは生じない。 When the holding force of the substrate by the substrate holding portion 16 is weakened (going to the right on the horizontal axis), as shown in curve C, the frictional force received by the substrate 10 from the substrate holding portion 16 decreases with a certain holding force. Sliding occurs and deformation in the in-plane direction occurs. However, if adhesion occurs between the substrate 10 and the substrate holding portion 16, the holding force does not cause the substrate 10 to slip, and as shown in curve D, the holding force of the substrate 10 must be further weakened. No slippage occurs.

そこで、制御部7は、通常の基板が滑り始める保持力またはそれよりも若干弱い所定の保持力F’において、基板の面内方向の変形量がしきい値TH’を超えているか否かを判定する。しきい値TH’は、面内方向の変形量により基板10の基板保持部16に対する滑りを判定するための値に設定され、例えば制御部7内のメモリに記憶されている。面内方向の変形量の計測は、例えばアライメント計測部6を用いて、図4に示すパターン部8aと基板上のショット領域20とのアライメントマークずれ量53を算出することにより行われうる。あるいは、高倍率アライメントスコープ55を用いて直接、基板10の面内方向の変形量を計測するようにしてもよい。また、基板加熱部37により基板10を加熱させた状態で基板保持部16の基板の保持力を変化させて基板10の面内方向の変形量を計測してもよい。この時点で面内方向の変形量がTH’を超えていなければ、制御部7は、凝着が発生していると判断し、基板保持部16のメンテナンスを促す警告を出力する。ここで、変形量のしきい値は、基板に形成されたショット領域の場所に応じて異なる場合がある。そのため、計測する場所に応じたしきい値を制御部7内のメモリに記憶されていてもよい。その他の方法として、基板の面内方向の変形量がしきい値TH’を超えたときの基板の保持力が所定値より弱ければ、制御部7は、基板保持部16のメンテナンスを促す警告を出力するようにしてもよい。 Therefore, the control unit 7 determines whether or not the amount of deformation of the substrate in the in-plane direction exceeds the threshold value TH'at the holding force F'where the normal substrate starts to slip or is slightly weaker than that. judge. The threshold value TH'is set to a value for determining slippage of the substrate 10 with respect to the substrate holding portion 16 based on the amount of deformation in the in-plane direction, and is stored in, for example, a memory in the control unit 7. The amount of deformation in the in-plane direction can be measured by, for example, using the alignment measuring unit 6 to calculate the alignment mark deviation amount 53 between the pattern unit 8a shown in FIG. 4 and the shot region 20 on the substrate. Alternatively, the amount of deformation of the substrate 10 in the in-plane direction may be directly measured using the high-magnification alignment scope 55. Further, the amount of deformation of the substrate 10 in the in-plane direction may be measured by changing the holding force of the substrate of the substrate holding portion 16 in a state where the substrate 10 is heated by the substrate heating unit 37. If the amount of deformation in the in-plane direction does not exceed TH'at this point, the control unit 7 determines that adhesion has occurred and outputs a warning prompting maintenance of the substrate holding unit 16. Here, the threshold value of the amount of deformation may differ depending on the location of the shot region formed on the substrate. Therefore, the threshold value according to the measurement location may be stored in the memory in the control unit 7. As another method, if the holding force of the board when the amount of deformation of the board in the in-plane direction exceeds the threshold value TH'is weaker than a predetermined value, the control unit 7 issues a warning prompting maintenance of the board holding unit 16. It may be output.

<第3実施形態>
第1実施形態では、基板保持部16のメンテナンスを促す警告が出力されると、洗浄装置71による基板保持部16の洗浄を行う構成を説明した。これに対し本実施形態では、基板保持部16のメンテナンスを促す警告が出力されると、基板保持部16の交換を行う。基板保持部16の交換は、図5に示すステージ駆動機構17上に載置されている基板保持部16を、搬送ロボット61により、保管部72に搬送する。その後、洗浄済みの基板保持部16を搬送ロボット61により保管部72から取り出し、ステージ駆動機構17上に載置する。保管部72内は、例えば、洗浄済みの基板保持部16を格納する領域と、メンテナンスのためにステージ駆動機構17により降ろされた基板保持部16を格納する領域とに分かれている。
<Third Embodiment>
In the first embodiment, when a warning prompting maintenance of the substrate holding portion 16 is output, the configuration for cleaning the substrate holding portion 16 by the cleaning device 71 has been described. On the other hand, in the present embodiment, when a warning prompting maintenance of the substrate holding portion 16 is output, the substrate holding portion 16 is replaced. To replace the substrate holding portion 16, the substrate holding portion 16 mounted on the stage drive mechanism 17 shown in FIG. 5 is conveyed to the storage unit 72 by the transfer robot 61. After that, the cleaned substrate holding portion 16 is taken out from the storage portion 72 by the transfer robot 61 and placed on the stage drive mechanism 17. The inside of the storage unit 72 is divided into, for example, an area for storing the cleaned substrate holding unit 16 and an area for storing the substrate holding unit 16 lowered by the stage drive mechanism 17 for maintenance.

なお、洗浄装置71および保管部72は、インプリント装置1内に設けられていてもよいし、インプリント装置1の外部に設けられていてもよい。また、基板保持部16のメンテナンスを促す警告が出力された場合、まず基板保持部16を保管部72に保管されている洗浄済みの基板保持部と交換し、インプリント処理を再開させる。その後に、保管部72からメンテナンスの必要な基板保持部16を洗浄装置71に搬送して洗浄を行うようにしてもよい。こうすることで、インプリント処理の中断時間を最小限に抑えることが可能である。 The cleaning device 71 and the storage unit 72 may be provided inside the imprint device 1 or may be provided outside the imprint device 1. When a warning prompting maintenance of the substrate holding unit 16 is output, the substrate holding unit 16 is first replaced with the cleaned substrate holding unit stored in the storage unit 72, and the imprint process is restarted. After that, the substrate holding unit 16 that requires maintenance may be transported from the storage unit 72 to the cleaning device 71 for cleaning. By doing so, it is possible to minimize the interruption time of the imprint process.

<物品製造方法の実施形態>
インプリント装置を用いて形成した硬化物のパターンは、各種物品の少なくとも一部に恒久的に、或いは各種物品を製造する際に一時的に、用いられる。物品とは、電気回路素子、光学素子、MEMS、記録素子、センサ、或いは、型等である。電気回路素子としては、DRAM、SRAM、フラッシュメモリ、MRAMのような、揮発性或いは不揮発性の半導体メモリや、LSI、CCD、イメージセンサ、FPGAのような半導体素子等が挙げられる。型としては、インプリント用のモールド等が挙げられる。
<Embodiment of Article Manufacturing Method>
The pattern of the cured product formed by using the imprint device is used permanently for at least a part of various articles or temporarily in manufacturing various articles. The article is an electric circuit element, an optical element, a MEMS, a recording element, a sensor, a mold, or the like. Examples of the electric circuit element include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, and semiconductor elements such as LSI, CCD, image sensor, and FPGA. Examples of the mold include a mold for imprinting.

硬化物のパターンは、上記物品の少なくとも一部の構成部材として、そのまま用いられるか、或いは、レジストマスクとして一時的に用いられる。基板の加工工程においてエッチング又はイオン注入等が行われた後、レジストマスクは除去される。 The pattern of the cured product is used as it is as a constituent member of at least a part of the above-mentioned article, or is temporarily used as a resist mask. The resist mask is removed after etching, ion implantation, or the like in the substrate processing process.

次に、物品製造方法について説明する。図9(a)に示すように、絶縁体等の被加工材2zが表面に形成されたシリコン基板等の基板1zを用意し、続いて、インクジェット法等により、被加工材2zの表面にインプリント材3zを付与する。ここでは、複数の液滴状になったインプリント材3zが基板上に付与された様子を示している。 Next, the article manufacturing method will be described. As shown in FIG. 9A, a substrate 1z such as a silicon substrate on which a work material 2z such as an insulator is formed on the surface is prepared, and subsequently, a substrate 1z such as a silicon substrate is prepared and then injected into the surface of the work material 2z by an inkjet method or the like. The printing material 3z is applied. Here, a state in which a plurality of droplet-shaped imprint materials 3z are applied onto the substrate is shown.

図9(b)に示すように、インプリント用の型4zを、その凹凸パターンが形成された側を基板上のインプリント材3zに向け、対向させる。図9(c)に示すように、インプリント材3zが付与された基板1と型4zとを接触させ、圧力を加える。インプリント材3zは型4zと被加工材2zとの隙間に充填される。この状態で硬化用のエネルギーとして光を型4zを介して照射すると、インプリント材3zは硬化する。 As shown in FIG. 9B, the imprint mold 4z is opposed to the imprint material 3z on the substrate with the side on which the uneven pattern is formed facing. As shown in FIG. 9C, the substrate 1 to which the imprint material 3z is applied is brought into contact with the mold 4z, and pressure is applied. The imprint material 3z is filled in the gap between the mold 4z and the work material 2z. In this state, when light is irradiated through the mold 4z as energy for curing, the imprint material 3z is cured.

図9(d)に示すように、インプリント材3zを硬化させた後、型4zと基板1zを引き離すと、基板1z上にインプリント材3zの硬化物のパターンが形成される。この硬化物のパターンは、型の凹部が硬化物の凸部に、型の部が硬化物の部に対応した形状になっており、即ち、インプリント材3zに型4zの凹凸パターンが転写されたことになる。 As shown in FIG. 9D, when the mold 4z and the substrate 1z are separated from each other after the imprint material 3z is cured, a pattern of the cured product of the imprint material 3z is formed on the substrate 1z. This pattern of cured product, the convex portion of the concave portion is a cured product of the mold, and a shape in which the convex portion of the mold is corresponding to the concave portion of the cured product, i.e., the uneven pattern of the mold 4z to imprint material 3z It has been transferred.

図9(e)に示すように、硬化物のパターンを耐エッチング型としてエッチングを行うと、被加工材2zの表面のうち、硬化物が無いか或いは薄く残存した部分が除去され、溝5zとなる。図9(f)に示すように、硬化物のパターンを除去すると、被加工材2zの表面に溝5zが形成された物品を得ることができる。ここでは硬化物のパターンを除去したが、加工後も除去せずに、例えば、半導体素子等に含まれる層間絶縁用の膜、つまり、物品の構成部材として利用してもよい。 As shown in FIG. 9E, when etching is performed using the pattern of the cured product as an etching resistant type, the portion of the surface of the work material 2z that has no cured product or remains thin is removed, and the groove 5z is formed. Become. As shown in FIG. 9 (f), when the pattern of the cured product is removed, an article in which the groove 5z is formed on the surface of the work material 2z can be obtained. Here, the pattern of the cured product is removed, but it may not be removed even after processing, and may be used, for example, as a film for interlayer insulation contained in a semiconductor element or the like, that is, as a constituent member of an article.

(他の実施形態)
本発明は、上述の実施形態の1以上の機能を実現するプログラムを、ネットワーク又は記憶媒体を介してシステム又は装置に供給し、そのシステム又は装置のコンピュータにおける1つ以上のプロセッサーがプログラムを読出し実行する処理でも実現可能である。また、1以上の機能を実現する回路(例えば、ASIC)によっても実現可能である。
(Other embodiments)
The present invention supplies a program that realizes one or more functions of the above-described embodiment to a system or device via a network or storage medium, and one or more processors in the computer of the system or device reads and executes the program. It can also be realized by the processing to be performed. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

1:インプリント装置、2:光照射部、4:基板ステージ、6:アライメント計測部、11:型保持部、16:基板保持部 1: Imprint device, 2: Light irradiation unit, 4: Substrate stage, 6: Alignment measurement unit, 11: Mold holding unit, 16: Substrate holding unit

Claims (13)

基板の上にパターンを形成するリソグラフィ装置であって、
前記基板を保持する基板保持部と、
前記基板保持部による前記基板の保持力を調整する調整部と、
前記基板の面外方向または面内方向の変形量を計測する計測部と、
前記基板保持部により前記基板が保持された状態から前記調整部により前記保持力を弱めながら前記計測部により計測された前記変形量に基づいて前記基板保持部と前記基板との接触状態が前記基板保持部と前記基板との間に凝着が生じた異常であるか否かを判定する判定部と、
を有することを特徴とするリソグラフィ装置。
A lithography system that forms a pattern on a substrate.
A substrate holding portion that holds the substrate and
An adjusting unit that adjusts the holding force of the substrate by the substrate holding unit,
A measuring unit that measures the amount of deformation of the substrate in the out-of-plane direction or the in-plane direction,
Said substrate contact state between the substrate and the substrate holding portion based on the deformation amount measured by the measuring unit while weakening the holding force by the adjusting unit from a state in which the substrate is held by the substrate holding portion A determination unit for determining whether or not there is an abnormality in which adhesion has occurred between the holding unit and the substrate, and a determination unit.
A lithographic apparatus characterized by having.
前記判定部は、前記調整部により前記保持力が所定値に調整されたときに前記計測部により計測された前記変形量がしきい値を超えていなければ、前記接触状態が前記異常であると判定することを特徴とする請求項1に記載のリソグラフィ装置。 The determination unit, if the holding force by the adjusting unit does not exceed the said deformation amount measured by the measuring unit is the threshold value when it is adjusted to a predetermined value, and the contact state is the abnormal The lithography apparatus according to claim 1, wherein the determination is made. 前記判定部は、前記計測部により前記変形量がしきい値を超えたときの前記保持力が所定値より弱ければ、前記接触状態が前記異常であると判定することを特徴とする請求項1に記載のリソグラフィ装置。 The determination unit, according to claim 1, wherein the holding force when said amount deformation exceeds the threshold value by the measuring unit if weaker than a predetermined value, the contact state and judging said is abnormal The lithography apparatus described in. 前記計測部は、前記基板の面外方向の変形量を計測するように構成され、
前記しきい値は、前記面外方向の変形量により前記基板の前記基板保持部からの浮き上がりを判定するための値に設定されている
ことを特徴とする請求項2又は3に記載のリソグラフィ装置。
The measuring unit is configured to measure the amount of deformation of the substrate in the out-of-plane direction.
The lithography apparatus according to claim 2 or 3, wherein the threshold value is set to a value for determining the lift of the substrate from the substrate holding portion based on the amount of deformation in the out-of-plane direction. ..
前記計測部は、前記基板の面内方向の変形量を計測するように構成され、
前記しきい値は、前記面内方向の変形量により前記基板の前記基板保持部に対する滑りを判定するための値に設定されている
ことを特徴とする請求項2又は3に記載のリソグラフィ装置。
The measuring unit is configured to measure the amount of deformation of the substrate in the in-plane direction.
The lithography apparatus according to claim 2 or 3, wherein the threshold value is set to a value for determining slippage of the substrate with respect to the substrate holding portion based on the amount of deformation in the in-plane direction.
前記基板保持部により前記基板が保持されてから所定時間待機した後、前記保持力を弱め、その後、前記保持力を元に戻すことにより、前記基板と前記基板保持部との間の温度差によって前記基板に生じた歪みを除去する歪み除去処理の中で、前記判定部による判定が行われることを特徴とする請求項1乃至5のいずれか1項に記載のリソグラフィ装置。 After waiting for a predetermined time after the substrate is held by the substrate holding portion, the holding force is weakened, and then the holding force is restored, thereby causing a temperature difference between the substrate and the substrate holding portion. The lithography apparatus according to any one of claims 1 to 5, wherein a determination is performed by the determination unit in the strain removing process for removing the strain generated on the substrate. 基板の上にパターンを形成するリソグラフィ装置であって、A lithography system that forms a pattern on a substrate.
前記基板を保持する基板保持部と、A substrate holding portion that holds the substrate and
前記基板保持部による前記基板の保持力を調整する調整部と、An adjusting unit that adjusts the holding force of the substrate by the substrate holding unit,
前記基板の面外方向の変形量を計測する計測部と、A measuring unit that measures the amount of deformation of the substrate in the out-of-plane direction,
前記基板保持部により前記基板が保持された状態から前記調整部により前記保持力を弱めながら前記計測部により計測された前記面外方向の変形量に基づいて前記基板保持部と前記基板との接触状態が正常か否かを判定する判定部と、Contact between the substrate holding portion and the substrate based on the amount of deformation in the out-of-plane direction measured by the measuring unit while weakening the holding force by the adjusting portion from the state where the substrate is held by the substrate holding portion. A judgment unit that determines whether the state is normal and
を有し、Have,
前記判定部は、前記調整部により前記保持力が所定値に調整されたときに前記計測部により計測された前記面外方向の変形量がしきい値を超えていなければ、前記接触状態が異常であると判定するように構成され、If the amount of deformation in the out-of-plane direction measured by the measuring unit does not exceed the threshold value when the holding force is adjusted to a predetermined value by the adjusting unit, the contact state is abnormal. It is configured to determine that
前記しきい値は、前記面外方向の変形量により前記基板の前記基板保持部からの浮き上がりを判定するための値に設定されているThe threshold value is set to a value for determining the lift of the substrate from the substrate holding portion based on the amount of deformation in the out-of-plane direction.
ことを特徴とするリソグラフィ装置。A lithographic device characterized by that.
基板の上にパターンを形成するリソグラフィ装置であって、A lithography system that forms a pattern on a substrate.
前記基板を保持する基板保持部と、A substrate holding portion that holds the substrate and
前記基板保持部による前記基板の保持力を調整する調整部と、An adjusting unit that adjusts the holding force of the substrate by the substrate holding unit,
前記基板の面内方向の変形量を計測する計測部と、A measuring unit that measures the amount of deformation of the substrate in the in-plane direction,
前記基板保持部により前記基板が保持された状態から前記調整部により前記保持力を弱めながら前記計測部により計測された前記面内方向の変形量に基づいて前記基板保持部と前記基板との接触状態が正常か否かを判定する判定部と、Contact between the substrate holding portion and the substrate based on the amount of deformation in the in-plane direction measured by the measuring unit while weakening the holding force by the adjusting portion from the state where the substrate is held by the substrate holding portion. A judgment unit that determines whether the state is normal and
を有し、Have,
前記判定部は、前記調整部により前記保持力が所定値に調整されたときに前記計測部により計測された前記面内方向の変形量がしきい値を超えていなければ、前記接触状態が異常であると判定するように構成され、When the holding force is adjusted to a predetermined value by the adjusting unit, the determination unit has an abnormal contact state if the amount of deformation in the in-plane direction measured by the measuring unit does not exceed the threshold value. It is configured to determine that
前記しきい値は、前記面内方向の変形量により前記基板の前記基板保持部に対する滑りを判定するための値に設定されているThe threshold value is set to a value for determining slippage of the substrate with respect to the substrate holding portion based on the amount of deformation in the in-plane direction.
ことを特徴とするリソグラフィ装置。A lithographic device characterized by that.
前記基板保持部により前記基板が保持されてから所定時間待機した後、前記保持力を弱め、その後、前記保持力を元に戻すことにより、前記基板と前記基板保持部との間の温度差によって前記基板に生じた歪みを除去する歪み除去処理の中で、前記判定部による判定が行われることを特徴とする請求項7または8に記載のリソグラフィ装置。After waiting for a predetermined time after the substrate is held by the substrate holding portion, the holding force is weakened, and then the holding force is restored, thereby causing a temperature difference between the substrate and the substrate holding portion. The lithography apparatus according to claim 7 or 8, wherein a determination is performed by the determination unit in the strain removing process for removing the strain generated on the substrate. 基板の上にパターンを形成するリソグラフィ装置であって、A lithography system that forms a pattern on a substrate.
前記基板を保持する基板保持部と、A substrate holding portion that holds the substrate and
前記基板保持部による前記基板の保持力を調整する調整部と、An adjusting unit that adjusts the holding force of the substrate by the substrate holding unit,
前記基板の変形量を計測する計測部と、A measuring unit that measures the amount of deformation of the substrate,
前記基板保持部により前記基板が保持された状態から前記調整部により前記保持力を弱めながら前記計測部により計測された前記変形量に基づいて前記基板保持部と前記基板との接触状態が正常か否かを判定する判定部と、Whether the contact state between the substrate holding unit and the substrate is normal based on the amount of deformation measured by the measuring unit while weakening the holding force by the adjusting unit from the state where the substrate is held by the substrate holding unit. Judgment unit that determines whether or not
を有し、Have,
前記基板保持部により前記基板が保持されてから所定時間待機した後、前記保持力を弱め、その後、前記保持力を元に戻すことにより、前記基板と前記基板保持部との間の温度差によって前記基板に生じた歪みを除去する歪み除去処理の中で、前記判定部による判定が行われる、ことを特徴とするリソグラフィ装置。After waiting for a predetermined time after the substrate is held by the substrate holding portion, the holding force is weakened, and then the holding force is restored, thereby causing a temperature difference between the substrate and the substrate holding portion. A lithography apparatus characterized in that a determination is performed by the determination unit in a strain removal process for removing strain generated on the substrate.
前記基板のショット領域の形状を補正するために前記基板を加熱する基板加熱部を更に有し、
前記計測部は、前記基板加熱部により加熱された前記基板の変形量を計測する
ことを特徴とする請求項1乃至10のいずれか1項に記載のリソグラフィ装置。
It further has a substrate heating section that heats the substrate to correct the shape of the shot region of the substrate.
The lithography apparatus according to any one of claims 1 to 10 , wherein the measuring unit measures the amount of deformation of the substrate heated by the substrate heating unit.
前記判定部により前記接触状態が前記異常であると判定されたときは警告を出力することを特徴とする請求項1乃至11のいずれか1項に記載のリソグラフィ装置。 The lithography apparatus according to any one of claims 1 to 11 , wherein a warning is output when the determination unit determines that the contact state is abnormal. 請求項1乃至12のいずれか1項に記載のリソグラフィ装置を用いて基板にパターンを形成する工程と、
前記形成する工程で前記パターンが形成された前記基板を処理する工程と、
を有し、
前記処理する工程で処理された前記基板から物品を製造することを特徴とする物品製造方法。
A step of forming a pattern on a substrate using the lithography apparatus according to any one of claims 1 to 12.
A step of processing the substrate on which the pattern was formed in the step of forming, and a step of processing the substrate.
Have,
A method for producing an article, which comprises producing an article from the substrate processed in the process.
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