Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JP6965861B2 - Vapor deposition equipment - Google Patents
[go: Go Back, main page]

JP6965861B2 - Vapor deposition equipment - Google Patents

Vapor deposition equipment Download PDF

Info

Publication number
JP6965861B2
JP6965861B2 JP2018183689A JP2018183689A JP6965861B2 JP 6965861 B2 JP6965861 B2 JP 6965861B2 JP 2018183689 A JP2018183689 A JP 2018183689A JP 2018183689 A JP2018183689 A JP 2018183689A JP 6965861 B2 JP6965861 B2 JP 6965861B2
Authority
JP
Japan
Prior art keywords
susceptor
substrate
semiconductor substrate
lift pin
lift pins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018183689A
Other languages
Japanese (ja)
Other versions
JP2020053627A (en
Inventor
翔平 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2018183689A priority Critical patent/JP6965861B2/en
Priority to KR1020190095490A priority patent/KR102708916B1/en
Priority to CN201910837131.8A priority patent/CN110970343A/en
Publication of JP2020053627A publication Critical patent/JP2020053627A/en
Application granted granted Critical
Publication of JP6965861B2 publication Critical patent/JP6965861B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、半導体基板の表面に薄膜を気相成長させてエピタキシャルウェーハを得る装置及び方法に関する。 The present invention relates to an apparatus and a method for obtaining an epitaxial wafer by vapor-depositing a thin film on the surface of a semiconductor substrate.

例えば、コンピュータに備わるメモリ及び演算素子、並びに、デジタルカメラ及びビデオに備わる撮像素子等の様々な半導体デバイスがシリコン基板を用いて作製されている。特に先端向けの半導体デバイスを作製する場合には、シリコン基板の表面に気相成長でシリコン層を堆積させたシリコンエピタキシャルウェーハが用いられる。 For example, various semiconductor devices such as a memory and an arithmetic element provided in a computer and an image pickup element provided in a digital camera and a video are manufactured using a silicon substrate. In particular, when manufacturing a semiconductor device for the tip, a silicon epitaxial wafer in which a silicon layer is deposited by vapor phase growth on the surface of a silicon substrate is used.

このようなエピタキシャルウェーハは、例えば、トリクロロシラン（ＴＣＳ）等の原料を１１００℃以上の高温で気相反応させ、シリコン基板の表面にシリコンエピタキシャル層を気相成長して作製される。作製されたエピタキシャルウェーハをもとに半導体デバイスが作製されるため、エピタキシャルウェーハのエピタキシャル層における膜厚と抵抗率は、半導体デバイスの特性に大きな影響を与える。それ故、半導体デバイスに用いるエピタキシャルウェーハにおいては、エピタキシャル層の膜厚と抵抗率がウェーハの面内方向において均一となる高品質なエピタキシャルウェーハが求められる。 Such an epitaxial wafer is produced, for example, by subjecting a raw material such as trichlorosilane (TCS) to a vapor phase reaction at a high temperature of 1100 ° C. or higher, and vapor-phase growing a silicon epitaxial layer on the surface of a silicon substrate. Since the semiconductor device is manufactured based on the manufactured epitaxial wafer, the film thickness and resistivity in the epitaxial layer of the epitaxial wafer have a great influence on the characteristics of the semiconductor device. Therefore, in an epitaxial wafer used for a semiconductor device, a high-quality epitaxial wafer in which the film thickness and resistivity of the epitaxial layer are uniform in the in-plane direction of the wafer is required.

高品質なエピタキシャル層を成長する装置として、１枚の半導体基板（以下、単に基板という場合がある）毎に基板の表面にエピタキシャル層を成長する枚葉式の気相成長装置が知られる。このような気相成長装置においては、例えば、石英製のブレードに基板を載置した状態で基板を搬送する搬送ロボットが用いられ、搬送ロボットにより基板が反応容器内に搬送される。反応容器内に搬送された基板は、例えば、リフトピンで搬送ロボットのブレード上からサセプタに向けて搬送され、基板はサセプタ上に載置される。 As an apparatus for growing a high-quality epitaxial layer, a single-wafer type vapor deposition apparatus for growing an epitaxial layer on the surface of each semiconductor substrate (hereinafter, may be simply referred to as a substrate) is known. In such a vapor phase growth apparatus, for example, a transfer robot that conveys the substrate while the substrate is placed on a quartz blade is used, and the substrate is conveyed into the reaction vessel by the transfer robot. The substrate conveyed into the reaction vessel is, for example, conveyed from the blade of the transfer robot toward the susceptor by a lift pin, and the substrate is placed on the susceptor.

基板が載置されるサセプタには、基板より直径が大きい円盤状にサセプタの表面が窪んだザグリ部が形成され、ザグリ部の内側に基板が載置される。ザグリ部に載置される基板は、基板とザグリ部の中心を一致させ、基板とザグリ部との間に環状の隙間ができるように載置することが望ましい。しかし、基板とサセプタが接触する際には、両者の隙間にガスが存在するため、サセプタ上で基板が横滑りすることがある。この場合、基板の中心がザグリ部の中心からずれた状態で基板がザグリ部に載置され、基板とザグリ部との間に幅が不均一な環状の隙間が形成される。この状態で基板にエピタキシャル層を成長すると、基板に供給される原料ガス等の流れが隙間に起因して基板の周方向で不均一となる。その結果、成長させるエピタキシャル層の外周部で膜厚が不均一となり、膜厚の均一性が悪化する。 On the susceptor on which the substrate is placed, a counterbore portion in which the surface of the susceptor is recessed is formed in a disk shape having a diameter larger than that of the substrate, and the substrate is mounted inside the counterbore portion. It is desirable that the substrate to be mounted on the counterbore portion be placed so that the centers of the substrate and the counterbore portion are aligned and an annular gap is formed between the substrate and the counterbore portion. However, when the substrate and the susceptor come into contact with each other, the substrate may slide sideways on the susceptor because gas exists in the gap between the two. In this case, the substrate is placed on the counterbore portion with the center of the substrate deviated from the center of the counterbore portion, and an annular gap having a non-uniform width is formed between the substrate and the counterbore portion. When the epitaxial layer is grown on the substrate in this state, the flow of the raw material gas or the like supplied to the substrate becomes non-uniform in the circumferential direction of the substrate due to the gap. As a result, the film thickness becomes non-uniform at the outer peripheral portion of the epitaxial layer to be grown, and the uniformity of the film thickness deteriorates.

ここで、特許文献１には、液晶ディスプレイやフラットパネルの製造に利用される、ガラス素材またはポリマー素材から構成される大面積基板と、これを支持する基板支持体との間からガスを追い出す技術が開示されている。特許文献１の技術では、大面積基板を基板支持体に移送する際に大面積基板の裏面を支持する第１セットのリフトピンと、第１セットのリフトピンよりも基板の内側を支持する第２セットのリフトピンとを設ける。そして、第１セットのリフトピンの長さや突出量を第２セットのリフトピンのそれよりも大きくすることで、大面積基板の断面形状を弓状に曲がった形状に制御し、大面積基板の中心から外縁にかけて徐々に基板支持体に接触させる。このように、特許文献３の技術では、基板のたわみを利用して、基板と基板支持体との間のガスを追い出している。 Here, Patent Document 1 describes a technique for expelling gas from a large-area substrate made of a glass material or a polymer material, which is used for manufacturing a liquid crystal display or a flat panel, and a substrate support that supports the large-area substrate. Is disclosed. In the technique of Patent Document 1, a first set of lift pins that support the back surface of the large-area substrate when the large-area substrate is transferred to the substrate support, and a second set that supports the inside of the substrate rather than the first set of lift pins. With a lift pin. Then, by making the length and the amount of protrusion of the lift pin of the first set larger than that of the lift pin of the second set, the cross-sectional shape of the large-area substrate is controlled to be curved in a bow shape, and the cross-sectional shape is controlled from the center of the large-area substrate. Gradually bring it into contact with the substrate support toward the outer edge. As described above, in the technique of Patent Document 3, the deflection between the substrate is used to expel the gas between the substrate and the substrate support.

特開２００６−４９８６７号公報Japanese Unexamined Patent Publication No. 2006-49867

しかし、特許文献１の技術は、たわみの少ない半導体基板のサセプタへの移送に適用する必要はない。 However, the technique of Patent Document 1 need not be applied to the transfer of a semiconductor substrate having less deflection to a susceptor.

本発明は上記事情に鑑みてなされたものであり、その課題は、半導体基板がサセプタ上で横滑りするのを抑制できる気相成長装置を提供することにある。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a vapor phase growth apparatus capable of suppressing sideslip of a semiconductor substrate on a susceptor.

課題を解決するための手段及び発明の効果Means for Solving Problems and Effects of Invention

上記課題を解決するため、本発明の気相成長装置は、
気相成長の際に半導体基板を支持するサセプタと、
前記サセプタを貫通して上下方向に延びるように設けられて、搬送ロボットにより前記サセプタの上方領域に搬送された半導体基板を前記サセプタへ移動させる際に該半導体基板の裏面を一時的に支持する３つ以上のリフトピンと、
前記リフトピンを昇降させるため下から前記リフトピンを支持する支持部とを備え、
全ての前記リフトピンは互いに同じ長さであり、
前記支持部は、
鉛直方向に延びた支柱と、
前記リフトピンの個数分設けられ、前記支柱から延びて上端面で前記リフトピンの下端を支持するアームとを備え、
一部の前記リフトピンを支持する前記アームの前記上端面が、他の前記リフトピンを支持する前記アームの前記上端面よりも高い位置に設定されており、
前記リフトピンは、半導体基板を傾斜させた状態で支持し、その状態から前記半導体基板を前記サセプタ上に置く際には、前記半導体基板の、傾斜した直径方向における低位置側のエッジから高位置側のエッジに向けて徐々に前記半導体基板を前記サセプタに接触させることを特徴とする。 In order to solve the above problems, the vapor phase growth apparatus of the present invention is used.
A susceptor that supports a semiconductor substrate during vapor deposition,
3 With one or more lift pins,
A support portion for supporting the lift pin from below for raising and lowering the lift pin is provided.
All said lift pins are the same length as each other
The support portion
With the columns extending in the vertical direction,
An arm provided for the number of the lift pins and extending from the support column to support the lower end of the lift pins on the upper end surface is provided.
The upper end surface of the arm that supports some of the lift pins is set at a position higher than the upper end surface of the arm that supports the other lift pins.
The lift pin supports the semiconductor substrate in an inclined state, and when the semiconductor substrate is placed on the susceptor from that state, the semiconductor substrate is placed on the high position side from the low position side edge in the inclined diameter direction. The semiconductor substrate is gradually brought into contact with the susceptor toward the edge of the semiconductor .

これによれば、半導体基板はリフトピンによって傾斜した状態からサセプタ上に置かれるので、半導体基板とサセプタとが接触する際に、両者の間にあるガスが隙間の大きいエッジ側から抜ける。これにより、半導体基板がサセプタ上で横滑りするのを抑制できる。また、半導体基板のたわみではなく、傾斜を利用してガスを逃がすので、半導体基板の性質（直径、厚み、組成など）に依存せずに半導体基板の横滑りを抑制できる。なお、「半導体基板を傾斜させた状態」とは、半導体基板のたわみが無いと仮定した場合に半導体基板の全体が一定角度（同一角度）で傾斜している状態を意味し、半導体基板がたわむことで部分的に傾斜した状態（つまりたわんだ状態）とは異なる。 According to this, since the semiconductor substrate is placed on the susceptor from an inclined state by the lift pin, when the semiconductor substrate and the susceptor come into contact with each other, the gas between them escapes from the edge side having a large gap. As a result, it is possible to prevent the semiconductor substrate from skidding on the susceptor. Further, since the gas is released by using the inclination instead of the deflection of the semiconductor substrate, the side slip of the semiconductor substrate can be suppressed without depending on the properties (diameter, thickness, composition, etc.) of the semiconductor substrate. The "state in which the semiconductor substrate is tilted" means a state in which the entire semiconductor substrate is tilted at a constant angle (same angle) when it is assumed that the semiconductor substrate is not bent, and the semiconductor substrate is bent. This is different from the partially tilted state (that is, the bent state).

また、本発明の気相成長装置において、傾斜させた状態での半導体基板の水平面に対する傾斜角度が０．１°以上、１０°未満であるのが望ましい。半導体基板の傾斜角度を０．１°より小さくすると、半導体基板とサセプタとの間のガス抜き効果が小さい。傾斜角度を１０°以上とすると、半導体基板がリフトピン上で滑ってしまい、リフトピンから滑り落ちてしまうおそれがある。半導体基板のリフトピン上での滑りを確実に防ぐためには、傾斜角度は１°未満とするのがより望ましい。 Further, in the vapor phase growth apparatus of the present invention, it is desirable that the inclination angle of the semiconductor substrate in an inclined state with respect to the horizontal plane is 0.1 ° or more and less than 10 °. When the inclination angle of the semiconductor substrate is smaller than 0.1 °, the degassing effect between the semiconductor substrate and the susceptor is small. If the inclination angle is 10 ° or more, the semiconductor substrate may slip on the lift pin and slip off the lift pin. It is more desirable that the inclination angle is less than 1 ° in order to surely prevent the semiconductor substrate from slipping on the lift pin.

また、本発明の気相成長装置において、全てのリフトピンがサセプタの中心から互いに等距離に設けられたとしてもよい。特許文献３のようにサセプタ（基板支持体）の中心からの距離が異なる複数セットのリフトピンを設けると装置構成が複雑になってしまう。サセプタの中心からの距離が等しいリフトピンのみを設けることで装置構成が複雑になってしまうのを抑制できる。 Further, in the vapor phase growth apparatus of the present invention, all the lift pins may be provided at equal distances from the center of the susceptor. If a plurality of sets of lift pins having different distances from the center of the susceptor (board support) as in Patent Document 3 are provided, the device configuration becomes complicated. By providing only lift pins having the same distance from the center of the susceptor, it is possible to prevent the device configuration from becoming complicated.

実施形態の気相成長装置を側方から見た断面図であって、長さの異なるリフトピンで半導体基板を傾斜させて支持した状態の図である。It is a cross-sectional view of the vapor phase growth apparatus of the embodiment seen from the side, and is the state in which the semiconductor substrate is tilted and supported by lift pins of different lengths. 変形例の気相成長装置を側方から見た断面図であって、高さの異なるリフトピン支持パーツのアームによって同一長さの各リフトピンを支持し、これらリフトピンで半導体基板を傾斜させて支持した状態の図である。It is a cross-sectional view of the vapor phase growth apparatus of the modified example seen from the side, and each lift pin of the same length is supported by the arms of lift pin support parts having different heights, and the semiconductor substrate is tilted and supported by these lift pins. It is a diagram of the state. 比較例の気相成長装置を側方から見た断面図であって、リフトピンで半導体基板を水平に支持した状態の図である。It is a cross-sectional view of the vapor phase growth apparatus of the comparative example seen from the side, and is the state in which the semiconductor substrate is horizontally supported by the lift pin. 別の比較例の気相成長装置を側方から見た断面図であって、サセプタにガス逃げ用の貫通孔が形成されるとともに、リフトピンで半導体基板を水平に支持した状態の図である。It is a cross-sectional view of another comparative example of a vapor phase growth apparatus viewed from the side, in which a through hole for gas escape is formed in a susceptor and a semiconductor substrate is horizontally supported by a lift pin. 実施例におけるサセプタの中心からの基板の相対位置のばらつきを示すグラフである。It is a graph which shows the variation of the relative position of a substrate from the center of a susceptor in an Example. 比較例におけるサセプタの中心からの基板の相対位置のばらつきを示すグラフである。It is a graph which shows the variation of the relative position of a substrate from the center of a susceptor in a comparative example.

以下、本発明の実施形態について図面を参照して説明するが、本発明はこれに限定されるものではない。先ず、図１を参照して、本発明に係る気相成長装置の好適な一例としての、本実施形態の枚葉式の気相成長装置１について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. First, with reference to FIG. 1, the single-wafer type vapor deposition apparatus 1 of the present embodiment will be described as a preferred example of the vapor deposition apparatus according to the present invention.

気相成長装置１は、シリコン基板等の半導体基板Ｗ（以下、基板という場合がある）の主表面にシリコン単結晶膜等の薄膜を気相成長させて、シリコンエピタキシャルウェーハ等のエピタキシャルウェーハを製造する装置である。なお、基板Ｗは例えば直径３００ｍｍ以下の円盤状の半導体基板であるが、直径３００ｍｍより大きい基板であってもよい。 The vapor phase growth apparatus 1 manufactures an epitaxial wafer such as a silicon epitaxial wafer by vapor-depositing a thin film such as a silicon single crystal film on the main surface of a semiconductor substrate W (hereinafter, may be referred to as a substrate) such as a silicon substrate. It is a device to do. The substrate W is, for example, a disk-shaped semiconductor substrate having a diameter of 300 mm or less, but may be a substrate having a diameter larger than 300 mm.

気相成長装置１は、サセプタ３と、該サセプタ３が内部に配される反応容器１１と、サセプタ３を支持するサセプタ支持パーツ４と、該サセプタ支持パーツ４を支持して回転駆動及び昇降動作させるアクチュエータ６ａと、サセプタ３を表裏に貫通するとともに該サセプタ３に対し昇降動作可能に設けられ、基板Ｗを支持した状態で昇降動作するのに伴わせて該基板Ｗをサセプタ３上に着脱するためのリフトピン５と、該リフトピン５を下から支持するリフトピン支持パーツ７と、該リフトピン支持パーツ７を支持して回転駆動及び昇降動作させるアクチュエータ６ｂと、気相成長の際に基板Ｗを成長温度に加熱するための上部加熱装置１４ａ及び下部加熱装置１４ｂ（具体的には、例えばハロゲンランプ）と、原料ガス（具体的には、例えばトリクロロシラン）およびキャリアガス（具体的には、例えば水素）を含む気相成長用ガスを反応容器１１内のサセプタ３上側の領域に導入して該サセプタ３上の基板Ｗの主表面上に供給する気相成長用ガス導入管１５と、気相成長用ガス導入管１５と反応容器１１に対し反対側に設けられ該反応容器１１からガス（気相成長用ガスおよびパージガス）を排気する排気管１６とを備えて概略構成されている。なお、ガス導入管１５は、反応容器１１の水平方向における一端側に位置して、気相成長用のガスを水平方向に導入する。排気管１６は、反応容器１１の水平方向における、ガス導入管１５の反対側に位置する。また、気相成長装置１は、反応容器１１内に基板Ｗを搬入する搬送ロボット（図示外）を備える。 The gas phase growth device 1 supports the susceptor 3, the reaction vessel 11 in which the susceptor 3 is arranged, the susceptor support part 4 that supports the susceptor 3, and the susceptor support part 4, and rotates and moves up and down. The actuator 6a and the susceptor 3 are provided so as to penetrate the susceptor 3 on the front and back sides and can be moved up and down with respect to the susceptor 3. Lift pin 5 for this purpose, a lift pin support part 7 that supports the lift pin 5 from below, an actuator 6b that supports the lift pin support part 7 to rotate and move up and down, and a growth temperature of the substrate W during gas phase growth. Upper heating device 14a and lower heating device 14b (specifically, for example, halogen lamp), raw material gas (specifically, for example, trichlorosilane) and carrier gas (specifically, for example, hydrogen) for heating to Gas for gas phase growth including gas for gas phase growth introduced into the region above the susceptor 3 in the reaction vessel 11 and supplied onto the main surface of the substrate W on the susceptor 3 and for gas phase growth. It is roughly configured with a gas introduction pipe 15 and an exhaust pipe 16 provided on the opposite side of the reaction vessel 11 and exhausting gas (gas for gas phase growth and purge gas) from the reaction vessel 11. The gas introduction pipe 15 is located on one end side of the reaction vessel 11 in the horizontal direction, and introduces the gas for vapor phase growth in the horizontal direction. The exhaust pipe 16 is located on the opposite side of the gas introduction pipe 15 in the horizontal direction of the reaction vessel 11. Further, the vapor phase growth apparatus 1 includes a transfer robot (not shown) that carries the substrate W into the reaction vessel 11.

サセプタ３は気相成長の際に基板Ｗを支持するものであり、例えば炭化珪素で被覆されたグラファイトにより構成されている。サセプタ３は、例えば略円盤状に構成されており、表面及び裏面が水平となるように設けられる。サセプタ３の表面及び裏面は平坦面となっている。また、サセプタ３には、表裏を貫通するリフトピン挿入用の貫通孔３ａが、リフトピン５の個数分（３つ以上）形成されている。各貫通孔３ａは、サセプタ３の中心Ｏから等距離となる位置に形成されるとともに、中心Ｏに対する円周方向において等間隔に形成されている。つまり、例えば貫通孔３ａの個数が３つとすると、３つの貫通孔３ａは、中心Ｏに対する円周方向において１２０°間隔で形成されている。また、各貫通孔３ａの、サセプタ３の表面からの一部区間は、サセプタ３の裏面に近づくにしたがって次第に径が小さくなるテーパー孔部として形成され、残りの区間が、径が変化しない一定径孔部として形成されている。 The susceptor 3 supports the substrate W during vapor phase growth, and is composed of, for example, graphite coated with silicon carbide. The susceptor 3 is formed in a substantially disk shape, for example, and is provided so that the front surface and the back surface are horizontal. The front surface and the back surface of the susceptor 3 are flat surfaces. Further, the susceptor 3 is formed with through holes 3a for inserting lift pins that penetrate the front and back surfaces as many as the number of lift pins 5 (three or more). The through holes 3a are formed at positions equidistant from the center O of the susceptor 3 and at equal intervals in the circumferential direction with respect to the center O. That is, for example, assuming that the number of through holes 3a is three, the three through holes 3a are formed at intervals of 120 ° in the circumferential direction with respect to the center O. Further, a part of each through hole 3a from the front surface of the susceptor 3 is formed as a tapered hole portion whose diameter gradually decreases as it approaches the back surface of the susceptor 3, and the remaining section has a constant diameter whose diameter does not change. It is formed as a hole.

また、図１の例では、サセプタ３の表面に、基板Ｗを載置するためのザグリ部が形成されていないが、ザグリ部が形成されていてもよい。また、サセプタ３上に基板Ｗが載置されたときには、貫通孔３ａに対向する部分を除いて基板Ｗの裏面の全体がサセプタ３の表面に接触する。 Further, in the example of FIG. 1, a counterbore portion for mounting the substrate W is not formed on the surface of the susceptor 3, but a counterbore portion may be formed. Further, when the substrate W is placed on the susceptor 3, the entire back surface of the substrate W comes into contact with the surface of the susceptor 3 except for the portion facing the through hole 3a.

サセプタ支持パーツ４は、鉛直方向（上下方向）に延びた支柱４ａと、支柱４ａの上部から斜め上方に延びた３つ以上のアーム４ｂと、各アーム４ｂの先端を構成し、サセプタ３の裏面に接続された接続部４ｃとを備えている。各アーム４ｂにはリフトピン挿入用の貫通孔４ｄが形成されている。支柱４ａの軸線Ｌ上にサセプタ３の中心Ｏが位置している。 The susceptor support part 4 comprises a support column 4a extending in the vertical direction (vertical direction), three or more arms 4b extending diagonally upward from the upper part of the support column 4a, and the tip of each arm 4b, and constitutes the back surface of the susceptor 3. It is provided with a connecting portion 4c connected to the above. A through hole 4d for inserting a lift pin is formed in each arm 4b. The center O of the susceptor 3 is located on the axis L of the support column 4a.

アクチュエータ６ａは、支柱４ａの下部を支持して、基板Ｗに薄膜を気相成長させる際には支柱４ａをその軸線Ｌ回りに回転させる。アクチュエータ６ａは、サセプタ３に対して基板Ｗを着脱する際には支柱４ａを軸線Ｌの方向に移動させる。 The actuator 6a supports the lower portion of the support column 4a and rotates the support column 4a around the axis L when the thin film is vapor-deposited on the substrate W. The actuator 6a moves the support column 4a in the direction of the axis L when attaching / detaching the substrate W to / from the susceptor 3.

リフトピン５は３つ以上設けられる。各リフトピン５は、サセプタ３の貫通孔３ａ及びアーム４ｂの貫通孔４ｄに挿入されて、鉛直方向（上下方向）に延びている。また、各リフトピン５は、サセプタ３の中心Ｏ（言い換えると、サセプタ３の回転軸線Ｌ）から等距離となる位置に設けられるとともに、中心Ｏに対する円周方向において等間隔となる位置に設けられている。 Three or more lift pins 5 are provided. Each lift pin 5 is inserted into the through hole 3a of the susceptor 3 and the through hole 4d of the arm 4b and extends in the vertical direction (vertical direction). Further, each lift pin 5 is provided at a position equidistant from the center O of the susceptor 3 (in other words, the rotation axis L of the susceptor 3) and at a position equidistant in the circumferential direction with respect to the center O. There is.

リフトピン５は、丸棒状の部分と、該部分の上端において上方にいくにしたがって次第に径が大きくなるテーパー部５ｃとを備えて構成されている。サセプタ３に対してリフトピン５が下降した状態にあるときには、このテーパー部５ｃが、貫通孔３ａのテーパー孔部に収まることで、リフトピン５の上端面がサセプタ３の表面に対して若干引っ込んだ位置となるとともに、リフトピン５がサセプタ３の下側に外れないようになっている。また、リフトピン５の下端はリフトピン支持パーツ７の先端部７ｃに固定されていなくてもよいし、固定されていてもよい。 The lift pin 5 is configured to include a round bar-shaped portion and a tapered portion 5c at the upper end of the portion whose diameter gradually increases as it goes upward. When the lift pin 5 is in a lowered state with respect to the susceptor 3, the tapered portion 5c fits in the tapered hole portion of the through hole 3a, so that the upper end surface of the lift pin 5 is slightly retracted with respect to the surface of the susceptor 3. At the same time, the lift pin 5 is prevented from coming off to the lower side of the susceptor 3. Further, the lower end of the lift pin 5 may not be fixed to the tip portion 7c of the lift pin support part 7, or may be fixed.

さらに、各リフトピン５は、基板Ｗをリフトピン５に載せた際に、基板Ｗが水平面に対して傾斜し、かつ、リフトピン５から滑り落ちないように、リフトピン５間で長さが異なっている。基板Ｗをリフトピン５に載せた際の基板Ｗの水平面に対する傾斜角度は、基板Ｗがリフトピン５から滑り落ちないようにすることと、基板Ｗとサセプタ３との隙間のガス抜き効果とを考慮すると、０．１°以上、１０°未満であることが望ましく、より望ましくは０．１°以上、１°未満である。この傾斜角度を満たすように各リフトピン５の長さが設定されている。 Further, each lift pin 5 has a different length between the lift pins 5 so that when the substrate W is placed on the lift pin 5, the substrate W is inclined with respect to the horizontal plane and does not slide off the lift pin 5. The inclination angle of the substrate W with respect to the horizontal plane when the substrate W is placed on the lift pin 5 is determined in consideration of preventing the substrate W from slipping off the lift pin 5 and the degassing effect of the gap between the substrate W and the susceptor 3. , 0.1 ° or more and less than 10 °, more preferably 0.1 ° or more and less than 1 °. The length of each lift pin 5 is set so as to satisfy this inclination angle.

より具体的には、例えば、図１のように側面視で見てリフトピン５の配置領域をサセプタ３の回転軸線Ｌを境界に２つの領域に分けたときに、一方の領域（以下第１領域という）に位置するリフトピン５ａは、他方の領域（以下第２領域という）に位置するリフトピン５ｂよりも長い。なお、第１領域に位置するリフトピン５ａの個数が複数の場合には、複数のリフトピン５ａは互いに同じ長さであってもよいし、異なる長さであってもよい。同様に、第２領域に位置するリフトピン５ｂの個数が複数の場合には、複数のリフトピン５ｂは互いに同じ長さであってもよいし、異なる長さであってもよい。 More specifically, for example, when the area where the lift pin 5 is arranged is divided into two areas with the rotation axis L of the susceptor 3 as a boundary when viewed from the side as shown in FIG. 1, one area (hereinafter referred to as the first area) is used. The lift pin 5a located in the other region (hereinafter referred to as the second region) is longer than the lift pin 5b located in the other region (hereinafter referred to as the second region). When the number of lift pins 5a located in the first region is plurality, the plurality of lift pins 5a may have the same length or different lengths from each other. Similarly, when the number of lift pins 5b located in the second region is plurality, the plurality of lift pins 5b may have the same length or different lengths from each other.

また、例えば、リフトピン５の個数が３つの場合には、長い方のリフトピン５ａの個数が１つ、短い方のリフトピン５ｂの個数が２つであってもよいし、長い方のリフトピン５ａの個数が２つ、短い方のリフトピン５ｂの個数が１つであってもよい。 Further, for example, when the number of lift pins 5 is three, the number of the longer lift pins 5a may be one, the number of the shorter lift pins 5b may be two, or the number of the longer lift pins 5a. There may be two, and the number of the shorter lift pins 5b may be one.

リフトピン支持パーツ７は鉛直方向に延びた支柱７ａと、支柱７ａの上部から斜め上方に延びた、リフトピン５の個数分（３つ以上）のアーム７ｂと、各アーム７ｂの先端を構成し、リフトピン５の下端を支持するための先端部７ｃとを備えている。支柱７ａは筒状に形成されており、支柱７ａの内側にサセプタ支持パーツ４の支柱４ａが設けられる。支柱７ａの軸線が、サセプタ支持パーツ４の支柱４ａの軸線Ｌに一致している。アーム７ｂ及び先端部７ｃは、サセプタ支持パーツ４のアーム４ｂの下側に位置する。また、各先端部７ｃの上面（リフトピン５との接触面）は互いに同一の高さ位置に設定されている。なお、リフトピン支持パーツ７が本発明の支持部に相当する。 The lift pin support parts 7 consist of a support column 7a extending in the vertical direction, arms 7b extending diagonally upward from the upper part of the support column 7a, as many as the number of lift pins 5 (three or more), and the tip of each arm 7b. It is provided with a tip portion 7c for supporting the lower end of 5. The support column 7a is formed in a cylindrical shape, and the support column 4a of the susceptor support part 4 is provided inside the support column 7a. The axis of the support column 7a coincides with the axis line L of the support column 4a of the susceptor support part 4. The arm 7b and the tip portion 7c are located below the arm 4b of the susceptor support part 4. Further, the upper surface (contact surface with the lift pin 5) of each tip portion 7c is set at the same height position as each other. The lift pin support part 7 corresponds to the support portion of the present invention.

アクチュエータ６ｂは、支柱７ａの下部を支持して、基板Ｗに薄膜を気相成長させる際には支柱７ａを軸線Ｌ回りに回転させる。この際、アクチュエータ６ｂは、支柱７ａの回転速度と、支柱４ａの回転速度とを同期（一致）させる。また、アクチュエータ６ｂは、サセプタ３に対して基板Ｗを着脱する際には支柱７ａを軸線Ｌの方向に移動させる。この際、リフトピン５毎に設けられた複数のアーム７ｂ及び先端部７ｃの昇降動作（昇降速度、昇降開始時点、昇降終了時点及び位置）は全て同期（一致）している。 The actuator 6b supports the lower portion of the support column 7a and rotates the support column 7a around the axis L when the thin film is vapor-deposited on the substrate W. At this time, the actuator 6b synchronizes (matches) the rotation speed of the support column 7a with the rotation speed of the support column 4a. Further, the actuator 6b moves the support column 7a in the direction of the axis L when attaching / detaching the substrate W to / from the susceptor 3. At this time, the elevating operations (elevation speed, elevating start time, elevating end time and position) of the plurality of arms 7b and the tip portion 7c provided for each lift pin 5 are all synchronized (matched).

以上が気相成長装置１の構成である。次に、気相成長装置１を用いたエピタキシャルウェーハの製造方法を説明する。先ず、搬送ロボットが基板Ｗを反応容器１１内のサセプタ３の上方領域まで搬送する。次に、リフトピン５が基板Ｗの裏面を支持するまで、アクチュエータ６ｂが上昇動作する。アクチュエータ６ｂが上昇動作すると、これに接続されたリフトピン支持パーツ７が上昇動作し、リフトピン支持パーツ７の先端部７ｃで支持されたリフトピン５も上昇動作してサセプタ３の表面から突出する。この際、リフトピン５は、サセプタ３の貫通孔３ａ及びサセプタ支持パーツ４の貫通孔４ｄにより、傾かないように規制される。 The above is the configuration of the vapor phase growth apparatus 1. Next, a method of manufacturing an epitaxial wafer using the vapor phase growth apparatus 1 will be described. First, the transfer robot transfers the substrate W to the upper region of the susceptor 3 in the reaction vessel 11. Next, the actuator 6b moves up until the lift pin 5 supports the back surface of the substrate W. When the actuator 6b moves up, the lift pin support part 7 connected to the actuator 6b moves up, and the lift pin 5 supported by the tip portion 7c of the lift pin support part 7 also moves up and protrudes from the surface of the susceptor 3. At this time, the lift pin 5 is regulated so as not to be tilted by the through hole 3a of the susceptor 3 and the through hole 4d of the susceptor support part 4.

上記のように一部のリフトピン５ａの長さを他のリフトピン５ｂの長さと異ならせているので、基板Ｗは、リフトピン５ａ、５ｂにより一時的に支持された状態では水平面に対して傾いた状態となる。 Since the length of some lift pins 5a is different from the length of other lift pins 5b as described above, the substrate W is in a state of being tilted with respect to the horizontal plane in a state of being temporarily supported by the lift pins 5a and 5b. It becomes.

その後、基板Ｗがサセプタ３上に載置されるまで、アクチュエータ６ｂが下降動作する（載置工程）。アクチュエータ６ｂが下降動作すると、これに接続されたリフトピン支持パーツ７が下降動作し、リフトピン支持パーツ７の先端部７ｃで支持されたリフトピン５及びリフトピン５に支持された基板Ｗも下降動作する。 After that, the actuator 6b moves down until the substrate W is mounted on the susceptor 3 (mounting step). When the actuator 6b is lowered, the lift pin support part 7 connected to the actuator 6b is lowered, and the lift pin 5 supported by the tip portion 7c of the lift pin support part 7 and the substrate W supported by the lift pin 5 are also lowered.

基板Ｗは傾斜した状態でリフトピン５に支持されるので、サセプタ３の表面に接触する際には、基板Ｗの、傾斜した直径方向における低位置側のエッジ（図１では左側のエッジ）から高位置側のエッジ（図１では右側のエッジ）に向けて徐々にサセプタ３に接触し、最終的に基板Ｗはサセプタ３に水平に保持される。これにより、基板Ｗとサセプタ３の間にあるガスが、サセプタ３との隙間の大きいエッジ（図１では右側のエッジ）側から抜ける。 Since the substrate W is supported by the lift pin 5 in an inclined state, when it comes into contact with the surface of the susceptor 3, it is high from the edge of the substrate W on the low position side in the inclined radial direction (the left edge in FIG. 1). The substrate W is gradually brought into contact with the susceptor 3 toward the edge on the position side (the edge on the right side in FIG. 1), and finally the substrate W is held horizontally by the susceptor 3. As a result, the gas between the substrate W and the susceptor 3 escapes from the edge (the right edge in FIG. 1) having a large gap with the susceptor 3.

その後、加熱装置１４ａ、１４ｂにより基板Ｗを所定の成長温度（例えば１１００℃以上）に加熱し、かつ、アクチュエータ６ａ、６ｂによりサセプタ支持パーツ４、サセプタ３、リフトピン支持パーツ７及びリフトピン５を軸線Ｌ回りに回転させつつ、ガス導入管１５から気相成長用ガスを反応容器１１内に導入することで、水平に保持された基板Ｗの主表面上にシリコン単結晶膜等の薄膜を気相成長させる（成長工程）。 After that, the substrate W is heated to a predetermined growth temperature (for example, 1100 ° C. or higher) by the heating devices 14a and 14b, and the susceptor support part 4, the susceptor 3, the lift pin support part 7 and the lift pin 5 are aligned with the axis L by the actuators 6a and 6b. By introducing the gas for vapor phase growth into the reaction vessel 11 from the gas introduction pipe 15 while rotating it around, a thin film such as a silicon single crystal film is vapor-grown on the main surface of the substrate W held horizontally. Let (growth process).

その後、アクチュエータ６ｂを上昇動作させることで、気相成長後の基板Ｗ（エピタキシャルウェーハ）をサセプタ３の上方領域に突出させる。その後、搬送ロボットが基板Ｗを反応容器１１外に搬送する。 After that, by moving the actuator 6b up, the substrate W (epitaxial wafer) after vapor phase growth is projected to the upper region of the susceptor 3. After that, the transfer robot transfers the substrate W to the outside of the reaction vessel 11.

なお、基板Ｗをサセプタ３に着脱する際には、アクチュエータ６ｂの昇降動作に加えて又は代えて、アクチュエータ６ａを昇降動作させてサセプタ支持パーツ４及びサセプタ３を昇降動作させることで、サセプタ３に対してリフトピン５を相対的に昇降動作させてもよい。 When the substrate W is attached to and detached from the susceptor 3, the actuator 6a is moved up and down to move the susceptor support parts 4 and the susceptor 3 up and down in addition to or instead of the actuator 6b. On the other hand, the lift pin 5 may be relatively raised and lowered.

このように、本実施形態では、基板Ｗをサセプタ３に載置する際に、両者の間にあるガスを効果的に逃がすことができるので、基板Ｗがサセプタ３上で横滑りするのを抑制できる。これにより、気相成長の際に、基板Ｗの中心と、サセプタ３の中心Ｏ（回転軸線Ｌ）とのズレを抑制できる。これにより、水平方向に導入された気相成長用ガスを、軸線Ｌの回りに回転する基板Ｗに均一に当てることができ、成長した薄膜の面内特性（膜厚、抵抗率等）を均一にできる。 As described above, in the present embodiment, when the substrate W is placed on the susceptor 3, the gas between the two can be effectively released, so that the substrate W can be prevented from skidding on the susceptor 3. .. As a result, it is possible to suppress the deviation between the center of the substrate W and the center O (rotational axis L) of the susceptor 3 during vapor phase growth. As a result, the gas for vapor phase growth introduced in the horizontal direction can be uniformly applied to the substrate W rotating around the axis L, and the in-plane characteristics (film thickness, resistivity, etc.) of the grown thin film can be made uniform. Can be done.

また、サセプタ３にザグリ部が形成された場合であっても、ザグリ部内において基板の横滑りを抑制でき、ザグリ部と基板との間に形成される環状の隙間を均一な幅にすることができる。これにより、基板に成長させる薄膜の外周部での膜厚を均一にできる。 Further, even when the counterbore portion is formed on the susceptor 3, the side slip of the substrate can be suppressed in the counterbore portion, and the annular gap formed between the counterbore portion and the substrate can be made uniform in width. .. As a result, the film thickness at the outer peripheral portion of the thin film to be grown on the substrate can be made uniform.

また、全てのリフトピン５がサセプタ３の中心Ｏから等距離に位置し、さらに、基板Ｗをサセプタ３に着脱する際には、全てのリフトピン５が互いに同期して昇降するので、装置構成が複雑になってしまうのを抑制できる。 Further, all the lift pins 5 are located equidistant from the center O of the susceptor 3, and when the substrate W is attached to and detached from the susceptor 3, all the lift pins 5 move up and down in synchronization with each other, so that the device configuration is complicated. It can be suppressed that it becomes.

これに対して、図３に示す比較例の気相成長装置では、全てのリフトピン１３が互いに同じ長さに設定され、このリフトピン１３により基板Ｗは水平に支持されるので、基板Ｗをサセプタ３に載置する際に、両者の間にあるガスによって、両者が接触する直前に基板Ｗの浮きが発生する。そして、基板Ｗが横滑りを起こした場合、最終的に基板Ｗがサセプタ３と接触する位置がばらついてしまう。なお、図３において、図１の気相成長装置１の構成と同様の構成には同一の符号を付している。 On the other hand, in the vapor phase deposition apparatus of the comparative example shown in FIG. 3, all the lift pins 13 are set to have the same length, and the substrate W is horizontally supported by the lift pins 13, so that the substrate W is supported by the susceptor 3. When placed on the substrate W, the gas between the two causes the substrate W to float immediately before the two come into contact with each other. Then, when the substrate W slips sideways, the position where the substrate W finally comes into contact with the susceptor 3 varies. In FIG. 3, the same reference numerals are given to the configurations similar to those of the vapor phase growth apparatus 1 of FIG.

以下、実施例を挙げて具体的に説明するが、これらは本発明を限定するものではない。 Hereinafter, the present invention will be specifically described with reference to examples, but these are not limited to the present invention.

（実施例）
実施例として、図１の気相成長装置１を用意した。ただし、サセプタ３としてガス逃げ用の貫通孔を有していないものを用意した。リフトピン５の個数は３つであり、そのうち１つのリフトピン５ａの長さを、残り２つのリフトピン５ｂよりも１ｍｍ長くした。直径３００ｍｍのシリコン基板Ｗを反応容器１１内にロボット搬送し、リフトピン５ａ、５ｂでシリコン基板Ｗを保持させた。このときのシリコン基板Ｗの水平面に対する傾斜角度は０．１°以上、１°未満の角度である。その後、リフトピン５ａ、５ｂを降下し、サセプタ３上にシリコン基板Ｗを載置し、サセプタ３を加熱装置１４ａ、１４ｂで１１５０℃に加熱し、原料ガスをトリクロロシランとしてシリコン単結晶膜の気相成長反応を実施した。このとき、サセプタ３の中心Ｏに対するシリコン基板Ｗの中心の相対位置を算出した。この一連の工程を複数のシリコン基板Ｗに対して行った。 (Example)
As an example, the vapor phase growth apparatus 1 of FIG. 1 was prepared. However, a susceptor 3 having no through hole for gas escape was prepared. The number of lift pins 5 is three, and the length of one lift pin 5a is 1 mm longer than that of the remaining two lift pins 5b. A silicon substrate W having a diameter of 300 mm was robotically transported into the reaction vessel 11, and the silicon substrate W was held by lift pins 5a and 5b. The inclination angle of the silicon substrate W with respect to the horizontal plane at this time is 0.1 ° or more and less than 1 °. After that, the lift pins 5a and 5b are lowered, the silicon substrate W is placed on the susceptor 3, the susceptor 3 is heated to 1150 ° C. by the heating devices 14a and 14b, and the raw material gas is trichlorosilane, and the vapor phase of the silicon single crystal film. A growth reaction was carried out. At this time, the relative position of the center of the silicon substrate W with respect to the center O of the susceptor 3 was calculated. This series of steps was performed on a plurality of silicon substrates W.

（比較例）
比較例として、Φ１．０ｍｍの貫通孔１７ａを孔ピッチ９ｍｍの間隔で基板載置面の全面に設けたサセプタ１７を備え、長さの等しいリフトピン１３を３本備えた図４の気相成長装置を用意した。実施例と同様の方法で直径３００ｍｍのシリコン基板Ｗを搬送し、気相成長を実施し、サセプタ１７の中心に対するシリコン基板Ｗの中心の相対位置を算出した。 (Comparison example)
As a comparative example, the vapor phase deposition apparatus of FIG. 4 is provided with a susceptor 17 in which through holes 17a having a diameter of 1.0 mm are provided on the entire surface of a substrate mounting surface at intervals of a hole pitch of 9 mm, and three lift pins 13 having the same length are provided. I prepared. A silicon substrate W having a diameter of 300 mm was conveyed by the same method as in the examples, vapor phase growth was carried out, and the relative position of the center of the silicon substrate W with respect to the center of the susceptor 17 was calculated.

（結果）
実施例におけるサセプタ３の中心からのシリコン基板Ｗの相対位置のばらつきを図５に示す。比較例におけるサセプタ１７の中心からのシリコン基板Ｗの相対位置のばらつきを図６に示す。図５、図６において、Ｘ軸とＹ軸の交点がサセプタの中心を示している。また、図５、図６において、白抜きの点は、各シリコン基板Ｗの中心位置を示している。黒塗りの点は、白抜き点の位置を平均した位置を示している。図５、図６の比較により、実施例の気相成長装置１も比較例と同等のばらつきであることが確認できた。なお、比較例では、シリコン基板Ｗとサセプタ１７の間のガスがサセプタ１７の貫通孔１７ａからサセプタ１７の下方に抜けることで、実施例と同等の結果となったと考えられる。 (result)
FIG. 5 shows the variation in the relative position of the silicon substrate W from the center of the susceptor 3 in the embodiment. FIG. 6 shows the variation in the relative position of the silicon substrate W from the center of the susceptor 17 in the comparative example. In FIGS. 5 and 6, the intersection of the X-axis and the Y-axis indicates the center of the susceptor. Further, in FIGS. 5 and 6, the white dots indicate the center positions of the silicon substrates W. The black dots indicate the average positions of the white dots. By comparing FIGS. 5 and 6, it was confirmed that the vapor phase growth apparatus 1 of the example also had the same variation as that of the comparative example. In the comparative example, it is considered that the gas between the silicon substrate W and the susceptor 17 escapes from the through hole 17a of the susceptor 17 to the lower part of the susceptor 17, resulting in the same result as in the embodiment.

以上より、リフトピン支持状態にて基板Ｗに傾斜を設けることで、基板Ｗとサセプタ３の隙間にあるガスを迅速に逃がすことが可能となり、サセプタ３の中心と基板Ｗの中心の相対位置のばらつきを抑えることができた。 From the above, by providing the substrate W with an inclination while the lift pin is supported, it is possible to quickly release the gas in the gap between the substrate W and the susceptor 3, and the relative positions of the center of the susceptor 3 and the center of the substrate W vary. I was able to suppress.

以上、本発明の実施例を説明したが、本発明はその具体的な記載に限定されることなく、例示した構成等を技術的に矛盾のない範囲で適宜組み合わせて実施することも可能であるし、またある要素、処理を周知の形態に置き換えて実施することもできる。 Although the examples of the present invention have been described above, the present invention is not limited to the specific description thereof, and the illustrated configurations and the like can be appropriately combined and implemented within a technically consistent range. However, it is also possible to replace certain elements and processes with well-known forms.

例えば、図２の気相成長装置１０のように、全てのリフトピン１２を互いに同じ長さとし、リフトピン支持パーツ８によって一部のリフトピン１２ｂの下端位置を他のリフトピン１２ａの下端位置と異なる高さ位置に設定することで、基板Ｗを傾斜させてもよい。なお、図２において、図１の気相成長装置１と同様の構成には同じ符号を付している。 For example, as in the vapor deposition apparatus 10 of FIG. 2, all the lift pins 12 have the same length, and the lift pin support parts 8 make the lower end positions of some of the lift pins 12b different from the lower end positions of the other lift pins 12a. The substrate W may be tilted by setting to. In addition, in FIG. 2, the same reference numerals are given to the same configurations as those of the vapor phase growth apparatus 1 of FIG.

図２では、一部のリフトピン１２ｂを支持するリフトピン支持パーツ８のアーム８ａの上端面８ｂが、他のリフトピン１２ａを支持するアーム８ｃの上端面８ｄよりも高い位置に設定されている。これによって、一部のリフトピン１２ｂの上端を、他のリフトピン１２ａの上端よりも高い位置にでき、基板Ｗを傾斜させた状態で支持できる。これによっても上記実施形態と同様の効果を得ることができる。 In FIG. 2, the upper end surface 8b of the arm 8a of the lift pin support part 8 that supports a part of the lift pins 12b is set at a position higher than the upper end surface 8d of the arm 8c that supports the other lift pins 12a. As a result, the upper ends of some of the lift pins 12b can be positioned higher than the upper ends of the other lift pins 12a, and the substrate W can be supported in an inclined state. This also makes it possible to obtain the same effect as that of the above embodiment.

また、上記実施例では、リフトピン挿入用の貫通孔以外の貫通孔を有していないサセプタを例示したが、リフトピン挿入用の貫通孔以外の貫通孔を有したサセプタを備えた気相成長装置に本発明を適用してもよい。この場合には、サセプタの貫通孔に起因するガス逃げ効果と、基板を傾斜させた状態からサセプタに載置することに起因するガス逃げ効果とが合わさって、より一層、基板がサセプタ上で横滑りするのを抑制できる。 Further, in the above embodiment, the susceptor having no through hole other than the through hole for inserting the lift pin has been illustrated, but the vapor deposition apparatus provided with the susceptor having the through hole other than the through hole for inserting the lift pin has been used. The present invention may be applied. In this case, the gas escape effect caused by the through hole of the susceptor and the gas escape effect caused by placing the substrate on the susceptor from the tilted state are combined, and the substrate slides on the susceptor even more. Can be suppressed.

１、１０ 気相成長装置
３、１７ サセプタ
４ サセプタ支持パーツ
５、１２、１３ リフトピン
５ａ 長いリフトピン
５ｂ 短いリフトピン
６ａ サセプタ支持パーツと接続されたアクチュエータ
６ｂ リフトピン支持パーツと接続されたアクチュエータ
７、８ リフトピン支持パーツ（支持部）
１１ 反応容器
１４ａ 上部加熱装置
１４ｂ 下部加熱装置
１５ 気相成長用ガス導入管
１６ 排気管
Ｗ 半導体基板 1, 10 Vapor Deposition Device 3, 17 Suceptor 4 Suceptor Support Parts 5, 12, 13 Lift Pin 5a Long Lift Pin 5b Short Lift Pin 6a Actuator Connected to Suceptor Support Parts 6b Actuator Connected to Lift Pin Support Parts 7, 8 Lift Pin Support Parts (support part)
11 Reaction vessel 14a Upper heating device 14b Lower heating device 15 Gas introduction pipe for vapor phase growth 16 Exhaust pipe W Semiconductor substrate

Claims (5)

気相成長の際に半導体基板を支持するサセプタと、
前記サセプタを貫通して上下方向に延びるように設けられて、搬送ロボットにより前記サセプタの上方領域に搬送された半導体基板を前記サセプタへ移動させる際に該半導体基板の裏面を一時的に支持する３つ以上のリフトピンと、
前記リフトピンを昇降させるため下から前記リフトピンを支持する支持部とを備え、
全ての前記リフトピンは互いに同じ長さであり、
前記支持部は、
鉛直方向に延びた支柱と、
前記リフトピンの個数分設けられ、前記支柱から延びて上端面で前記リフトピンの下端を支持するアームとを備え、
一部の前記リフトピンを支持する前記アームの前記上端面が、他の前記リフトピンを支持する前記アームの前記上端面よりも高い位置に設定されており、
前記リフトピンは、半導体基板を傾斜させた状態で支持し、その状態から前記半導体基板を前記サセプタ上に置く際には、前記半導体基板の、傾斜した直径方向における低位置側のエッジから高位置側のエッジに向けて徐々に前記半導体基板を前記サセプタに接触させることを特徴とする気相成長装置。 A susceptor that supports a semiconductor substrate during vapor deposition,
3 With one or more lift pins,
A support portion for supporting the lift pin from below for raising and lowering the lift pin is provided.
All said lift pins are the same length as each other
The support portion
With the columns extending in the vertical direction,
An arm provided for the number of the lift pins and extending from the support column to support the lower end of the lift pins on the upper end surface is provided.
The upper end surface of the arm that supports some of the lift pins is set at a position higher than the upper end surface of the arm that supports the other lift pins.
The lift pin supports the semiconductor substrate in an inclined state, and when the semiconductor substrate is placed on the susceptor from that state, the semiconductor substrate is placed on the high position side from the low position side edge in the inclined diameter direction. A vapor deposition apparatus characterized in that the semiconductor substrate is gradually brought into contact with the susceptor toward the edge of the semiconductor. 前記リフトピンが前記半導体基板を前記傾斜させた状態に支持するまで前記支柱を上昇動作させ、その後、前記半導体基板が前記サセプタ上に載置されるまで前記支柱を下降動作させるアクチュエータを備えることを特徴とする請求項１に記載の気相成長装置。 It is characterized by comprising an actuator that raises the support column until the lift pin supports the semiconductor substrate in the tilted state, and then lowers the support column until the semiconductor substrate is placed on the susceptor. The vapor phase growth apparatus according to claim 1. 前記傾斜させた状態での半導体基板の水平面に対する傾斜角度が０．１°以上、１０°未満であることを特徴とする請求項１又は２に記載の気相成長装置。 The vapor phase growth apparatus according to claim 1 or 2 , wherein the inclination angle of the semiconductor substrate with respect to the horizontal plane in the inclined state is 0.1 ° or more and less than 10 °. 前記傾斜させた状態での半導体基板の水平面に対する傾斜角度が０．１°以上、１°未満であることを特徴とする請求項１〜３のいずれか１項に記載の気相成長装置。 The vapor phase growth apparatus according to any one of claims 1 to 3 , wherein the inclination angle of the semiconductor substrate with respect to the horizontal plane in the inclined state is 0.1 ° or more and less than 1 °. 全ての前記リフトピンが前記サセプタの中心から互いに等距離に設けられたことを特徴とする請求項１〜４のいずれか１項に記載の気相成長装置。 The vapor phase growth apparatus according to any one of claims 1 to 4 , wherein all the lift pins are provided at equal distances from the center of the susceptor.
JP2018183689A 2018-09-28 2018-09-28 Vapor deposition equipment Active JP6965861B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018183689A JP6965861B2 (en) 2018-09-28 2018-09-28 Vapor deposition equipment
KR1020190095490A KR102708916B1 (en) 2018-09-28 2019-08-06 Vapor growth device, production method for epitaxial wafer
CN201910837131.8A CN110970343A (en) 2018-09-28 2019-09-05 Vapor phase growth apparatus and method for manufacturing epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018183689A JP6965861B2 (en) 2018-09-28 2018-09-28 Vapor deposition equipment

Publications (2)

Publication Number Publication Date
JP2020053627A JP2020053627A (en) 2020-04-02
JP6965861B2 true JP6965861B2 (en) 2021-11-10

Family

ID=69997844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018183689A Active JP6965861B2 (en) 2018-09-28 2018-09-28 Vapor deposition equipment

Country Status (3)

Country Link
JP (1) JP6965861B2 (en)
KR (1) KR102708916B1 (en)
CN (1) CN110970343A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113629001B (en) * 2020-05-09 2024-05-14 长鑫存储技术有限公司 Carrier device
EP3957776B1 (en) * 2020-08-17 2025-06-18 Siltronic AG Method for depositing an epitaxial layer on a substrate wafer
EP4009358A1 (en) * 2020-12-04 2022-06-08 ASM IP Holding B.V. High performance susceptor apparatus
CN112736020B (en) * 2020-12-31 2024-06-07 拓荆科技股份有限公司 Wafer supporting pin lifting device
JP7770157B2 (en) 2021-10-22 2025-11-14 東京エレクトロン株式会社 Method for transporting object to be processed and processing apparatus
WO2024210970A1 (en) * 2023-04-03 2024-10-10 Applied Materials, Inc. Homing methods for lift assemblies, and related apparatus and components, for substrate processing chambers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064132A (en) * 2000-08-22 2002-02-28 Tokyo Electron Ltd Method of delivering object, object mounting mechanism and probe device
JP2004063865A (en) * 2002-07-30 2004-02-26 Shin Etsu Handotai Co Ltd Manufacturing method of susceptor, vapor phase depoisition device, and epitaxial wafer
KR20050019685A (en) * 2003-08-20 2005-03-03 주식회사 디엠에스 Apparatus for tilting transferring works and the method of the same
US20060005770A1 (en) 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
JP2006128205A (en) * 2004-10-26 2006-05-18 Kyocera Corp Wafer supporting member
JP5141707B2 (en) * 2010-03-24 2013-02-13 株式会社安川電機 SUPPORT MECHANISM AND SUPPORT METHOD FOR PROCESSED BODY AND CONVEYING SYSTEM HAVING THE SAME
JP2012238758A (en) * 2011-05-12 2012-12-06 Sharp Corp Substrate loading apparatus and substrate loading method
US9368379B2 (en) * 2012-03-14 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods of controlling semiconductor wafer fabrication processes

Also Published As

Publication number Publication date
KR20200036723A (en) 2020-04-07
JP2020053627A (en) 2020-04-02
KR102708916B1 (en) 2024-09-25
CN110970343A (en) 2020-04-07

Similar Documents

Publication Publication Date Title
JP6965861B2 (en) Vapor deposition equipment
JP6424726B2 (en) Susceptor and epitaxial growth apparatus
JP5604907B2 (en) Semiconductor substrate support susceptor for vapor phase growth, epitaxial wafer manufacturing apparatus, and epitaxial wafer manufacturing method
CN110494957B (en) Epitaxial growth device, preheat ring, and method for manufacturing epitaxial wafer using these
CN107851560B (en) Susceptor, epitaxial growth apparatus, and epitaxial wafer
EP1615259A1 (en) Susceptor and vapor growth device
KR101516164B1 (en) Susceptor for epitaxial growth
WO2005034219A1 (en) Production method for silicon epitaxial wafer, and silicon epitaxial wafer
CN108604539B (en) Epitaxial growth device and holding member
JP7233361B2 (en) Susceptor, epitaxial substrate manufacturing method, and epitaxial substrate
US7060944B2 (en) Heat treatment device and heat treatment method
JP3004846B2 (en) Susceptor for vapor phase growth equipment
JP6551335B2 (en) Susceptor support shaft and epitaxial growth apparatus
JP2004119859A (en) Susceptor, and device and method for manufacturing semiconductor wafer
JP4599816B2 (en) Manufacturing method of silicon epitaxial wafer
JP2003289045A (en) Suscepter, and device for manufacturing epitaxial wafer and method for manufacturing epitaxial wafer
JP2010034185A (en) Susceptor for vapor deposition apparatus and method of manufacturing epitaxial wafer
JP2018026503A (en) Susceptor, epitaxial growth system, and manufacturing method of epitaxial wafer
CN115565852A (en) Method and apparatus for backsealing silicon wafers
JP2003289044A (en) Suscepter, device for manufacturing epitaxial wafer and method for manufacturing the same
JP2010028013A (en) Susceptor for vapor-phase growth device
JP2019117890A (en) Manufacturing method of epitaxial wafer and epitaxial wafer
JP2021089933A (en) Vapor deposition device
JP6233712B2 (en) Vapor growth apparatus and supporting structure of substrate to be processed
JP6841359B1 (en) Manufacturing method of susceptor for manufacturing silicon epitaxial wafer and manufacturing method of silicon epitaxial wafer

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200818

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210609

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210921

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211004

R150 Certificate of patent or registration of utility model

Ref document number: 6965861

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250