JP6973429B2 - Plasma device - Google Patents

Description

The present invention relates to a plasma apparatus capable of generating plasma or processing using plasma.

Plasma, in which gas molecules (atoms) are ionized into cations and electrons (collectively referred to as "charged particles"), is used in various fields. In particular, low-temperature plasma formed by glow discharge has excellent controllability and is widely used in various treatments such as formation of semiconductor layers and insulating layers, thin film formation such as DLC (especially CVD), surface treatment (surface modification), and etching. It's being used.

However, the conventional treatment using plasma is mainly performed in a low pressure atmosphere of several hundred Pa or less. If the processing using this plasma becomes possible in an atmosphere of atmospheric pressure to quasi-atmospheric pressure (simply referred to as "atmosphere near atmospheric pressure"), the processing cost can be significantly reduced. Therefore, various proposals have been made regarding devices and the like capable of generating plasma in an atmosphere near atmospheric pressure, and for example, there are descriptions related to the following patent documents.

Japanese Unexamined Patent Publication No. 2009-272318 Japanese Unexamined Patent Publication No. 2008-98128 Japanese Unexamined Patent Publication No. 2004-335066

In Patent Documents 1 and 2, plasma is generated by a dielectric barrier discharge. In dielectric barrier discharge, the dielectric between the electrodes limits the discharge current and terminates before the arc discharge occurs. That is, the dielectric barrier discharge is always a pulsed discharge, and Joule heating is also suppressed. As a result, the atmospheric pressure non-equilibrium plasma can be stably obtained by using the dielectric barrier discharge. However, in the dielectric barrier discharge, the current density is small due to the suppression of the discharge current, and it is difficult to obtain a plasma density sufficient for processing such as surface modification.

In Patent Document 3, a microcathode plasma discharge is performed in the electrode hole of the hollow cathode electrode to generate plasma. However, the electrode is exposed in the chamber, and discharge can occur not only in the electrode hole but also between the electrode and the chamber. For example, looking at FIG. 1 of Patent Document 3, a voltage is applied between the perforated conductive member 4b, which is an electrode, and the chamber 2 by a DC power supply 7. It is also described that plasma is generated in the chamber 2 ([0026], [0027], [0037], etc.). Therefore, in the apparatus of Patent Document 3, it is difficult to generate high-density plasma in the electrode hole (3), and plasma (radicals, ions, etc.) cannot be efficiently applied from the electrode hole to the work. Further, in the apparatus of Patent Document 3, since plasma is generated even in the chamber, the inner wall surface of the chamber is easily contaminated and requires frequent maintenance.

Furthermore, when plasma is generated in an atmosphere near atmospheric pressure, the electrodes tend to become hot. Therefore, in the case of Patent Document 3, a correspondingly large thermal expansion difference may occur between the perforated spacer 4a made of ceramics and the perforated conductive member 4b made of metal. However, the perforated spacer 4a and the perforated conductive member 4b of Patent Document 3 are fixed with both ends constrained. That is, in the apparatus of Patent Document 3, the difference in thermal expansion (countermeasure against high temperature) is not considered at all, and Patent Document 3 does not mention this point at all.

The present invention has been made in view of such circumstances, and has a new structure different from the conventional one, and is capable of stably generating plasma and processing using plasma even in an atmosphere near atmospheric pressure. The purpose is to provide equipment and the like.

As a result of diligent research to solve this problem, the present inventor causes a discharge (plasma generation) only between the inner peripheral wall surfaces of the electrode exposed in the through hole, and directs radicals, ions, etc. from the through hole to the work. I came up with the idea of making it spout. We have completed a plasma device with a new structure that embodies this. By developing this result, the present invention described below was completed.

《Plasma device》
(1) In the present invention, the introduction portion to which gas is supplied, the first insulator, the first electrode, the second insulator, and the second insulator arranged on the downstream side of the introduction portion and laminated in order from the upstream side. A generation unit having an electrode is provided, and the generation unit penetrates the first insulator, the first electrode, the second insulator, and the second electrode from the upstream side to the downstream side and communicates with the introduction unit. The introduction portion has a communication hole, and when a gas is allowed to flow into the communication hole and a voltage is applied between the first electrode and the second electrode, the introduction portion constitutes a part of the communication hole. It is a plasma device capable of ejecting plasma generated between the inner peripheral surface of the first electrode and the inner peripheral surface of the second electrode toward the work from the opening on the downstream side of the communication hole.

(2) According to the plasma device of the present invention (also simply referred to as “device”), no discharge occurs in the introduction portion, and the inner peripheral surface of the first electrode and the inner peripheral surface of the second electrode exposed in the communication hole. A discharge can be generated only between the holes, and a high-density plasma can be efficiently generated in the communication hole. High-density electrons, radicals, ions, etc. generated in the communication hole are pushed out by the gas flow (air flow) introduced from the upper end opening on the upstream side of the communication hole, and the lower end opening on the downstream side of the communication hole. Outflow (and even spout) from. As described above, according to the apparatus of the present invention, unlike the case of dielectric barrier discharge, a plasma having a high current density can be generated by a large discharge current, and the atmosphere is in the vicinity of atmospheric pressure (atmospheric pressure to quasi-atmospheric pressure atmosphere). Efficient plasma processing is possible even for workpieces.

<< Generation method / Processing method >>
The present invention can also be grasped as a plasma generation method using the above-mentioned apparatus or various treatment methods (surface modification, film formation, cleaning, etc.) using the plasma generated using the apparatus. In the present specification, various processes using plasma are simply referred to as "plasma process".

"others"
(1) The discharge referred to in the present specification is a glow discharge or an arc discharge unless otherwise specified.

Subatmospheric pressure in this specification (P) is less than the atmospheric pressure _{(P 0),} 1/100 of atmospheric pressure (0.01P ₀₎ or a pressure _{(P 0> P ≧ 0.01P 0} ), further is 1/10 of the atmospheric pressure (0.1P ₀₎ or a pressure _{(P 0> P ≧ 0.1P 0} ). For example, if the atmospheric pressure is the standard atmospheric pressure (P ₀ = 1.01325 × 10 ⁵ Pa ≈ 1 × 10 ⁵ Pa), the quasi-atmospheric pressure (P) is generally 1 × 10 ⁵ Pa> P ≧ 1 × 10 ³ Pa, Further, it may be considered as a range of 1 × 10 ⁵ Pa> P ≧ 1 × 10 ^{4 Pa.}

(2) The upstream and downstream as referred to in the present specification are along the direction in which gas or plasma flows in the introduction portion or the generation portion (particularly the communication hole). Unless otherwise specified, the flow direction is called the vertical direction regardless of the vertical direction (actual arrangement). For example, the surface, the end, etc. on the upstream side are appropriately referred to as the upper surface, the upper end, etc., and the surface, the end, etc. on the downstream side, which is the opposite side, are referred to as the lower surface, the lower end, etc. The same applies to other parts and the like.

The surface direction referred to in the present specification is a direction in which the main surface of each member (electrode, insulator) or work extends. Usually, it is a direction that intersects (further, is orthogonal) in the vertical direction described above.

(3) Unless otherwise specified, "x to y" in the present specification include a lower limit value x and an upper limit value y. A range such as "a to b" may be newly established with any numerical value included in the various numerical values or numerical ranges described in the present specification as a new lower limit value or upper limit value.

(4) "x to ymm" as used herein means xmm to ymm unless otherwise specified. The same applies to other unit systems (kHz, etc.).

It is sectional drawing which shows an example of the plasma apparatus schematically. It is an enlarged sectional view of a part of it. It is a photograph showing how plasma is generated by the plasma device.

One or more components arbitrarily selected from the present specification may be added to the components of the present invention described above. The contents described in this specification appropriately apply not only to the device but also to the method. Even a methodical component can be a component related to an object. Which embodiment is the best depends on the target, required performance, and the like.

《Generator》
(1) The electrode and the insulator generation unit are arranged (laminated) with a first insulator, a first electrode, a second insulator, and a second electrode in order from at least the upstream side. The first electrode is interposed between the first insulator and the second insulator. Therefore, even if a high voltage is applied to the first electrode, discharge is unlikely to occur with another metal body (for example, an enclosure such as a chamber) around the outer periphery of the first electrode. That is, a discharge is generated only between the first electrode and the second electrode in the communication hole, and plasma can be efficiently generated in the communication hole.

In particular, it is preferable that both sides of the first electrode are entirely covered with the first insulator and the second insulator. Further, it is preferable that the outer peripheral side of the first electrode is also covered with an insulator. For example, the first electrode is housed in a (closed) space formed by an annular insulator (insulating ring) and plate-shaped first insulators and second insulators arranged on both sides thereof. It is good.

When the first electrode is surrounded (enclosed) by an insulator, the first electrode may be energized (wiring to the power supply) via the introduction portion. For example, a first connecting tool for connecting the introduction portion and the first electrode may be provided, and the introduction portion and the first connecting tool may be used as a conductive material. At this time, since the introduction portion and the first electrode have substantially the same potential, no discharge or the like occurs between them (inside the introduction portion).

The first connector may be loosely penetrated by the first insulator. When the temperature of the generator (especially the electrode) rises during the operation of the device (especially in the atmosphere near atmospheric pressure), at least the difference in thermal expansion (heat) due to the difference in the coefficient of thermal expansion between the first electrode and the first insulator. Stress) can occur. If the first connector is loosely penetrated by the first insulator and there is a gap (clearance) between them, the difference in thermal expansion (thermal stress) can be absorbed. As a result, damage (cracking, etc.) of the generated portion (particularly the first insulator) is avoided.

When the electrode is made of steel and the insulator is made of ceramic, the difference in thermal expansion coefficient between the two is about ^10-5 / K. If a temperature rise of 500 to 1200 K (° C.) is allowed, the clearance may be, for example, 0.005 to 0.012 times or more (for example, 0.008 times or more) the reference length. The reference length may be, for example, the maximum length of the first electrode or the pitch at the position where the first connector is provided. To give a specific example, the shaft diameter of the first connector: d ₁ , the hole diameter of the first insulator: d ₀ , and the hole pitch: p are d ₀ ≧ d ₁ + 2 × (0.005 to 0.012). It should be p. As another specific example, when an annular insulator (insulating ring) is provided on the outer peripheral side of the first electrode, the outer diameter of the first electrode is D ₁ , the inner diameter of the insulating ring is D ₀ , and D ₀ ≧. D ₁ + 2 × (0.005 to 0.012) D ₁ is preferable.

The first electrode is preferably in a state of being relatively displaceable with respect to the first insulator and the second insulator in the plane direction in which the amount of thermal expansion increases. That is, the first electrode is not firmly fixed or adhered to each insulating plate (not restrained or regulated), and the first electrode can be moved by sliding contact with each insulating plate. It would be nice to have one. Similarly, it is preferable that the second electrode can be displaced relative to the second insulator in the plane direction. Incidentally, the second electrode can be heated not only by the heat generated by the electric discharge (plasma generation) but also by the radiant heat from the heated stage or work.

The lower surface side of the second electrode may be covered with an insulator, or the entire second electrode (excluding the communication hole) may be surrounded by the insulator. However, if the potential difference between the second electrode and the work or other members (stage, chamber, etc.) is small, no discharge will occur between them. By not providing an insulator on the lower surface side of the second electrode, the lower surface of the second electrode (the lower end opening of the communication hole) can be made closer to the work (stage).

Each electrode is made of a metal material such as stainless steel, iron, copper, titanium, tungsten or aluminum. The insulator is made of, for example, ceramics, quartz, glass, polytetrafluoroethylene, polyimide (for example, Kapton) and the like. Examples of ceramics include alumina (Al ₂ O ₃ ) aluminum nitride (AlN) and boron nitride (BN), which are also excellent in heat resistance.

The thickness of each electrode is, for example, 1 to 30 mm and further to 5 to 15 mm. The thickness of each insulator is, for example, 0.1 to 20 mm and further 1 to 10 mm. In particular, the thickness of the first insulator (distance between the first electrode and the second electrode) may be 0.1 to 5 mm, more preferably 0.5 to 3 mm. If this thickness is too small, the insulator will partially break down and the discharge will become unstable. If this thickness is excessive, the discharge voltage becomes very large, and the equipment cost of the power supply becomes high.

(2) Communication hole The generation unit has a communication hole that penetrates the first insulator, the first electrode, the second insulator, and the second electrode from the upstream side to the downstream side. A part of the inner peripheral surface of the communication hole is composed of the inner peripheral surface of the first electrode and the inner peripheral surface of the second electrode. When a voltage is applied between the first electrode and the second electrode, a discharge (mainly a glow discharge) occurs between the inner peripheral surfaces of each electrode, and plasma is generated in the communication hole. As a matter of course, the inner peripheral surface of the first insulator and the inner peripheral surface of the second insulator form other inner peripheral surfaces of the communication holes.

The communication hole communicates from the introduction portion to the work side (or the stage side), and an air flow from the introduction portion to the work is generated in the communication hole. The plasma generated in the communication hole is carried by the air flow and flows out (spouts) from the lower end opening toward the work.

The number of communication holes may be one or more. When there are a plurality of communication holes, the plasma generation density and processing efficiency can be increased. The arrangement of the plurality of communication holes may be regular or irregular, and may be arranged in a grid pattern, a radial pattern, or the like, for example. Pore number of communication holes, for example, 1 to 100000 pieces / ^{m 2} more or equal to 100 to 40,000 pieces / ^{m 2.}

There may be various shapes of the communication holes. The communication hole usually constitutes a cylindrical nozzle. The hole diameter may be, for example, φ0.1 to 10 mm, further φ0.5 to 5 mm. If the communication hole (hole diameter) is too small, the nozzle may be clogged due to long-term film formation. If the communication hole becomes excessive, the plasma ejection length becomes small.

<< Introduction >>
The introduction unit guides the gas supplied from the gas source or the like into the communication hole. The introduction portion is, for example, a hollow (cap-shaped) body closely arranged on the upper surface side of the first insulator so as to surround the upper end opening of the communication hole (or the upper end opening of the first insulator). be. In this case, the supplied gas hardly leaks to the outside and flows only into the communication hole. Further, when there are a plurality of communication holes, the introduction unit uniformly distributes the supplied gas and causes the supplied gas to flow into each communication hole.

"stage"
The stage is arranged on the downstream side of the generation part, and a work facing the lower end opening of the communication hole is placed. The stage may have temperature control means for heating or cooling the work. For example, the stage may have a built-in heater or the like. Further, the stage may be provided with a moving means for moving the work. For example, when the work is moved in the plane direction, plasma or the like emitted from the lower end opening of the communication hole can be irradiated over a wide range, and the irradiation position thereof can be freely changed. As a result, it is possible to uniformly process the surface of the work or efficiently process only a specific area of the work.

The distance (interval) from the lower end opening of the communication hole to the work may be 0.1 to 20 mm, more preferably 0.5 to 10 mm. If the interval is too large, efficient processing cannot be performed, and if the interval is too small, the airflow in the communication hole and the ejection of plasma become unstable.

"Power supply"
The voltage required for plasma generation is applied between the power supply and each electrode. The power source may be a DC power source, an AC power source, or a pulse power source. The frequency of the AC power supply or the pulse power supply may be, for example, 1 k to 100 kHz, more preferably 10 k to 75 kHz.

The applied voltage (peak / peak value / maximum and minimum voltage difference) may be, for example, −200 to -3000V and further to −400 to -1500V. Normally, the potential required for plasma generation is applied to the first electrode with respect to the second electrode. The second electrode may be, for example, grounded. The stage may be equipotential with respect to the second electrode or may be a bias potential. When no bias voltage is applied, the second electrode and the stage may be grounded together. When a metal chamber is provided, the chamber should also be grounded.

"atmosphere"
The generation of plasma by the apparatus of the present invention and the processing using the plasma can be performed in various atmospheres. For example, the apparatus of the present invention may be used for processing in a low pressure atmosphere or may be used for processing in an atmosphere near atmospheric pressure. In the apparatus of the present invention, since plasma is generated in the communication hole, only the periphery of the work (downstream side of the communication hole) may have a desired atmosphere. For example, if at least the downstream side of the communication holes has a quasi-atmospheric pressure atmosphere, it is advisable to exhaust the inside of the chamber or the like surrounding them. The exhaust means is, for example, a draft device, a vacuum pump, or the like. Of course, the entire device including the stage on which the work is placed may be housed in a chamber or the like and exhausted. By exhausting at least the periphery of the work to create a quasi-atmospheric pressure atmosphere, it is possible to prevent leakage and diffusion of the gas and plasma used for the treatment to the outside, and it is possible to maintain a suitable working environment.

"gas"
Various gases can be supplied to the introduction section. For example, an inert gas (noble gas (Ar, Ne, He, etc.), N _2, etc.), a raw material gas such as a hydrocarbon, a mixed gas thereof, or the like. In addition to the plasma source gas supplied to the introduction portion, the raw material gas that reacts with the plasma may be supplied to the vicinity of the lower end opening of the communication hole or the vicinity of the surface of the work.

《Use》
The apparatus of the present invention is used for various plasma treatments. For example, the apparatus of the present invention can be used for surface modification, film formation, cleaning and the like for electronic parts and mechanical parts.

The present invention will be described in more detail with reference to an example of a plasma apparatus.

"Device configuration"
The outline of the plasma apparatus S (simply referred to as “device S”) which is an embodiment of the present invention is schematically shown in FIG. Further, an enlarged view of a part thereof is shown in FIG. For convenience of explanation, the vertical direction and the horizontal direction are the arrow directions shown in the figure.

The device S includes a gas g supply unit 1, a plasma generation unit 2, a stage 3, an exhaust unit 4, a chamber 5, and a power supply 6.

(1) The supply unit 1 has a cap 11 (introduction unit), a conduit 12, and a bolt 13 (first connector). The cap 11 is made of a stepped bottomed cylinder. A conduit 12 is connected to the upper cylindrical portion 111 of the cap 11. The gas g serving as a plasma source is supplied from the gas source into the cap 11 through the conduit 12. The gas g supplied into the cap 11 diffuses from the upper cylindrical portion 111 to the large-diameter lower cylindrical portion 112, and flows into each nozzle 20 (communication hole) described later from the upper end opening 20a.

The cap 11 is fixed by the bolt 13 with the lower end surface of the side wall portion 112a of the lower cylindrical portion 112 in close contact with the upper end surface of the insulating plate 211 of the generation portion 2. The bolt 13 penetrates the side wall portion 112a and the insulating plate 211 and is screwed into the screw hole 221a of the electrode plate 221.

Here, the inner diameter (hole diameter: d ₀ ) of the through hole 211a of the insulating plate 211 is larger than _{the outer diameter (shaft diameter: d 1} ) of the threaded portion 13a of the bolt 13. That is, a gap is formed between the screw portion 13a and the through hole 211a. This gap (c) is set sufficiently larger than the thermal expansion difference between the insulating plate 211 and the electrode plate 221 that occurs during the operation of the device S. For example, when the electrode plate 221 is made of stainless steel and the insulating plate 211 is made of ceramics, the left-right pitch of the through holes 211a _{is set to c = d 0-} d ₁ = 2 × 0.008 × p.

The cap 11 and the bolt 13 are made of metal (for example, stainless steel), and the conduit 12 is made of an insulating material (for example, a resin tube).

In this way, the bolt 13 is loosely penetrated by the insulating plate 211. Therefore, even if the generation unit 2 (particularly the electrode plate 221) becomes hot during the operation of the apparatus S, damage such as cracking due to thermal stress (thermal expansion difference) does not occur in the insulating plate 211. As a matter of course, the cap 11, the insulating plate 211, and the electrode plate 221 can be relatively displaced (sliding) in the left-right direction (plane direction) between adjacent ones. The relative displacement referred to in the present specification may be movable to the extent that the difference in thermal expansion is eliminated. Incidentally, the insulating plate 211, the electrode plate 221 and the insulator 212, the insulating ring 213 and the electrode 222 can be similarly displaced relative to each other.

(2) The generation unit 2 has an insulating plate 211 (first insulator), an electrode plate 221 (first electrode) and an insulating ring 213, an insulating plate 212 (second insulator), and an electrode plate 222 (second insulator) in this order from above. (2 electrodes) are laminated. The insulating plate 211, the insulating plate 212, the electrode plate 221 and the electrode plate 222 have a disk shape, and the insulating ring 213 has an annular shape.

The insulating plate 211, the insulating ring 213, and the insulating plate 212 are connected by bolts 23. The bolt 23 penetrates them and is screwed into the screw hole of the electrode plate 222. The electrode plate 221 is housed in a thin cylindrical recess (space) formed by the insulating plate 211, the insulating ring 213, and the insulating plate 212. Considering the amount of thermal expansion of the electrode plate 221, the inner diameter of the insulating ring 213 is sufficiently larger than the outer diameter of the electrode plate 221.

The insulating plate 211 is also in a state of being sandwiched between the cap 11 and the electrode plate 221 by the bolt 13 described above. Further, the insulating plate 212 is housed in a thin cylindrical recess formed in the central region of the electrode plate 222, and the upper end surfaces of both are flush with each other.

Incidentally, each insulating plate and the insulating ring are made of ceramics (for example, alumina), each electrode plate is made of metal (for example, stainless steel), and the bolt 23 is made of ceramics (for example, alumina).

(3) A plurality of cylindrical nozzles 20 penetrating in the vertical direction are formed in the generation unit 2. The nozzle 20 is formed by laminating holes 2110 of the laminated insulating plate 211, holes 2210 of the electrode plate 221, holes 2120 of the insulating plate 212, and holes 2220 of the electrode plate 222. When a high voltage is applied between the electrode plate 211 and the electrode plate 221, a discharge occurs between the inner peripheral surface 2210a of the hole 2210 and the inner peripheral surface 2220a of the hole 2220, and plasma p is generated in the nozzle 20. do. The plasma p is pushed by the air flow in the nozzle 20 going from the upstream to the downstream, and is ejected from the lower end opening 20b of the nozzle 20.

(4) The stage 3 is a drive mechanism (not shown) in which the base 31, the heater 32 built in the base 31, and the base 31 are moved in the plane direction (X-axis direction and / Y-axis direction). And a control device (not shown) for controlling the heater 32 and the drive mechanism. The temperature of the work w placed on the base 31 is controlled by the heater 32 and the control device (temperature adjusting means). The position of the work w mounted on the base 31 (adjustment of the processing range, etc.) is performed by the drive mechanism and the control device (moving means).

(5) The supply unit 1, the generation unit 2, and the stage 3 are housed in the chamber 5. The internal pressure of the chamber 5 is set to quasi-atmospheric pressure by the exhaust pump 41 (vacuum pump) and the regulating valve 42 (pressure control valve). The quasi-atmospheric pressure is sufficient to exhaust the inside of the chamber 5 to the extent that the raw material gas (plasma generation gas, reaction gas with plasma) does not leak.

(6) The power supply 6 applies a high voltage required for plasma generation between the electrode plate 221 and the electrode plate 222. The energization of the electrode plate 221 is performed via the cap 11 and the bolt 13. Further, the electrode plate 222, the stage 3 and the chamber 5 are all grounded.

《Plasma generation》
The device S was actually prototyped and the generation of plasma was confirmed.

A rolled stainless steel (SUS304) plate was used for each of the electrode plates 221 and 222, and an alumina (Al ₂ O ₃ ) fired body was used for the insulating plates 211 and 212 and the insulating ring 213. The thickness of the electrode plate 221 was 2 mm, the thickness of the central region of the electrode plate 222 was 1 mm, and the thickness of the outer peripheral region thereof was 2 mm. The thickness of the insulating plate 211 was 2 mm, the thickness of 212 was 1 mm, and the thickness of the insulating ring 213 was 2 mm.

Nozzles 20 were formed at a total of 7 locations, including the center and 6 locations around the center. Each of the nozzles 20 has a hole diameter of φ1 mm and a length of 6 mm.

For the cap 11, a press-molded product of stainless steel (SUS304) was used. The material of the bolt 13 was SUS304, and the material of the bolt 23 was alumina.

0.2 MPa of Ar gas was supplied to the conduit 12 from a gas cylinder. The inside of the chamber 5 was set to quasi-atmospheric pressure (2.0 × 10 ⁴ Pa). A pulse power supply was used as the power supply. The pulse voltage was a square wave with a frequency of 50 kHz and varied between 0 and 600 V.

When the lower surface side of the electrode plate 222 was observed in this way, as shown in FIG. 3, it was observed that a purple glow discharge was ejected from the lower end opening 20b of the nozzle 20, and the generation of plasma was confirmed.

S Plasma device 1 Supply section 11 Cap (introduction section)
2 Generator 20 Nozzle (communication hole)
211 Insulation plate (first insulator)
212 Insulation plate (second insulator)
221 Electrode plate (1st electrode)
222 Electrode plate (second electrode)
3 stages

Claims (10)

Introductory part where gas is supplied and
It is provided with a first insulator, a first electrode, a second insulator, and a generation portion having a second electrode, which are arranged on the downstream side of the introduction portion and are laminated in order from the upstream side.
The generation unit has a communication hole that penetrates the first insulator, the first electrode, the second insulator, and the second electrode from the upstream side to the downstream side and communicates with the introduction unit.
The introduction portion causes gas to flow into the communication hole, and the introduction portion causes the gas to flow into the communication hole.
The first electrode can be displaced relative to the first insulator and the second insulator in the plane direction.
When a voltage is applied between the first electrode and the second electrode, between the inner peripheral surface of the first electrode and the inner peripheral surface of the second electrode forming a part of the communication hole. A plasma device capable of ejecting the generated plasma from the lower end opening of the communication hole toward the work. The plasma apparatus according to claim 1, wherein the first electrode is entirely covered on both sides by the first insulator and the second insulator. The second electrode, prior SL with respect to the second insulator, a plasma apparatus according to claim 1 or 2 may be relatively displaced in the plane direction. Further, a first connecting tool for connecting the introduction portion and the first electrode is provided.
The plasma device according to any one of claims 1 to 3, wherein the introduction portion and the first connecting tool are made of a conductive material. The plasma device according to claim 4, wherein the first connector is loosely penetrated by the first insulator. The plasma apparatus according to any one of claims 1 to 5, further comprising an exhaust means having at least a quasi-atmospheric pressure atmosphere on the downstream side of the communication hole. The plasma apparatus according to any one of claims 1 to 6, further comprising a stage arranged on the downstream side of the communication hole and on which a work to be processed can be placed. The plasma device according to claim 7, wherein the stage has a means for moving the work. The plasma apparatus according to claim 7 or 8, wherein the stage has a temperature adjusting means for the work. The first electrode has a potential required for plasma generation with respect to the second electrode.
The plasma apparatus according to any one of claims 7 to 9, wherein the stage has the same potential or a bias potential with respect to the second electrode.

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