JP6975344B2 - パターニングプロセスについての情報を決定する方法、測定データにおける誤差を低減する方法、メトロロジプロセスを較正する方法、メトロロジターゲットを選択する方法 - Google Patents
パターニングプロセスについての情報を決定する方法、測定データにおける誤差を低減する方法、メトロロジプロセスを較正する方法、メトロロジターゲットを選択する方法 Download PDFInfo
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- JP6975344B2 JP6975344B2 JP2020547286A JP2020547286A JP6975344B2 JP 6975344 B2 JP6975344 B2 JP 6975344B2 JP 2020547286 A JP2020547286 A JP 2020547286A JP 2020547286 A JP2020547286 A JP 2020547286A JP 6975344 B2 JP6975344 B2 JP 6975344B2
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- metrology
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/11—Complex mathematical operations for solving equations, e.g. nonlinear equations, general mathematical optimization problems
- G06F17/12—Simultaneous equations, e.g. systems of linear equations
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Theoretical Computer Science (AREA)
- Operations Research (AREA)
- Databases & Information Systems (AREA)
- Software Systems (AREA)
- General Engineering & Computer Science (AREA)
- Algebra (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17205158.3A EP3492985A1 (en) | 2017-12-04 | 2017-12-04 | Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets |
| EP17205158.3 | 2017-12-04 | ||
| PCT/EP2018/081224 WO2019110254A1 (en) | 2017-12-04 | 2018-11-14 | Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021505973A JP2021505973A (ja) | 2021-02-18 |
| JP6975344B2 true JP6975344B2 (ja) | 2021-12-01 |
Family
ID=60569799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020547286A Active JP6975344B2 (ja) | 2017-12-04 | 2018-11-14 | パターニングプロセスについての情報を決定する方法、測定データにおける誤差を低減する方法、メトロロジプロセスを較正する方法、メトロロジターゲットを選択する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US11022897B2 (he) |
| EP (1) | EP3492985A1 (he) |
| JP (1) | JP6975344B2 (he) |
| KR (1) | KR102483364B1 (he) |
| CN (1) | CN111433679B (he) |
| IL (1) | IL274834B2 (he) |
| TW (1) | TWI711891B (he) |
| WO (1) | WO2019110254A1 (he) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI891479B (zh) * | 2023-10-26 | 2025-07-21 | 美商昂圖創新公司 | 有信號污染下之結構測量 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10866508B2 (en) * | 2018-05-18 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for manufacturing photomask and semiconductor manufacturing method thereof |
| US11600536B2 (en) * | 2019-07-04 | 2023-03-07 | Hitachi High-Tech Corporation | Dimension measurement apparatus, dimension measurement program, and semiconductor manufacturing system |
| IL279727B2 (he) * | 2019-12-24 | 2025-03-01 | Asml Netherlands Bv | שיטת קביעת מידע אודות הליך דפוסים, שיטת הפחתת שגיאה בנתוני מדידה, שיטת כיול תהליך מטרולוגיה, שיטת בחירת יעדי מטרולוגיה |
| US11355165B2 (en) | 2020-04-27 | 2022-06-07 | Micron Technology, Inc. | Adjusting parameters of channel drivers based on temperature |
| EP3961304A1 (en) * | 2020-08-31 | 2022-03-02 | ASML Netherlands B.V. | Mapping metrics between manufacturing systems |
| EP4040233A1 (en) * | 2021-02-03 | 2022-08-10 | ASML Netherlands B.V. | A method of determining a measurement recipe and associated metrology methods and appratuses |
| EP4113210A1 (en) * | 2021-07-01 | 2023-01-04 | ASML Netherlands B.V. | A method of monitoring a measurement recipe and associated metrology methods and apparatuses |
| WO2023025506A1 (en) * | 2021-08-26 | 2023-03-02 | Asml Netherlands B.V. | Method for determing a measurement recipe and associated apparatuses |
| US12020970B2 (en) * | 2021-09-22 | 2024-06-25 | International Business Machines Corporation | Metrology data correction |
| EP4191338A1 (en) | 2021-12-03 | 2023-06-07 | ASML Netherlands B.V. | Metrology calibration method |
| CN114278281B (zh) * | 2021-12-24 | 2023-11-21 | 北京西华益昌技术开发有限责任公司 | 测量装置的测量分辨率优化方法、装置、设备及存储介质 |
| US12455509B2 (en) | 2022-02-24 | 2025-10-28 | Nanya Technology Corporation | Semiconductor structure and system for manufacturing the same |
| TWI799296B (zh) * | 2022-02-24 | 2023-04-11 | 南亞科技股份有限公司 | 半導體結構的製備方法 |
| CN115035056B (zh) * | 2022-05-31 | 2024-04-30 | 华南理工大学 | 基于微分几何的柔性ic基板线路刻蚀缺陷检测方法及系统 |
| US12560510B2 (en) * | 2022-10-28 | 2026-02-24 | Applied Materials, Inc. | Methods of geometry parameters measurement for optical gratings |
| CN115932530B (zh) * | 2023-01-09 | 2023-06-02 | 东莞市兆恒机械有限公司 | 一种半导体检测设备标定的方法 |
| CN115983738B (zh) * | 2023-03-21 | 2023-06-27 | 广东仁懋电子有限公司 | 一种用于提升氮化镓制备效率的方法和装置 |
| CN119828425B (zh) * | 2025-03-20 | 2025-07-08 | 晶芯成(北京)科技有限公司 | 误差补偿的确定方法、半导体结构及其制造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7277813B2 (en) * | 2005-02-24 | 2007-10-02 | State of Oregon University Portland State | Pattern detection for integrated circuit substrates |
| US7656518B2 (en) * | 2007-03-30 | 2010-02-02 | Asml Netherlands B.V. | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus |
| NL1036098A1 (nl) * | 2007-11-08 | 2009-05-11 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus lithographic, processing cell and device manufacturing method. |
| NL1036245A1 (nl) | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
| NL1036597A1 (nl) | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
| NL2003890A (en) * | 2008-12-16 | 2010-06-17 | Asml Netherlands Bv | Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell. |
| NL2004094A (en) | 2009-02-11 | 2010-08-12 | Asml Netherlands Bv | Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method. |
| JP5545782B2 (ja) | 2009-07-31 | 2014-07-09 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置の焦点測定方法、散乱計、リソグラフィシステム、およびリソグラフィセル |
| KR20120058572A (ko) | 2009-08-24 | 2012-06-07 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 장치, 리소그래피 처리 셀 및 메트롤로지 타겟들을 포함하는 기판 |
| JP2011192769A (ja) * | 2010-03-15 | 2011-09-29 | Renesas Electronics Corp | 半導体デバイス製造方法、及び製造システム |
| NL2006700A (en) | 2010-06-04 | 2011-12-06 | Asml Netherlands Bv | Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus. |
| NL2007425A (en) | 2010-11-12 | 2012-05-15 | Asml Netherlands Bv | Metrology method and apparatus, and device manufacturing method. |
| US9329033B2 (en) * | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
| KR101855243B1 (ko) | 2013-08-07 | 2018-05-04 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| KR101906289B1 (ko) * | 2014-02-21 | 2018-10-10 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피를 수반하는 제조 공정을 위한 공정 파라미터의 측정 |
| KR102521159B1 (ko) * | 2014-11-25 | 2023-04-13 | 피디에프 솔루션즈, 인코포레이티드 | 반도체 제조 공정을 위한 개선된 공정 제어 기술 |
| CN107430350B (zh) | 2015-02-04 | 2019-10-18 | Asml荷兰有限公司 | 计量方法和设备、计算机程序和光刻系统 |
| US10615084B2 (en) | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
-
2017
- 2017-12-04 EP EP17205158.3A patent/EP3492985A1/en not_active Withdrawn
-
2018
- 2018-11-14 JP JP2020547286A patent/JP6975344B2/ja active Active
- 2018-11-14 CN CN201880078343.6A patent/CN111433679B/zh active Active
- 2018-11-14 KR KR1020207016063A patent/KR102483364B1/ko active Active
- 2018-11-14 IL IL274834A patent/IL274834B2/he unknown
- 2018-11-14 WO PCT/EP2018/081224 patent/WO2019110254A1/en not_active Ceased
- 2018-11-19 US US16/194,769 patent/US11022897B2/en active Active
- 2018-11-30 TW TW107142847A patent/TWI711891B/zh active
-
2021
- 2021-04-27 US US17/241,142 patent/US11604419B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI891479B (zh) * | 2023-10-26 | 2025-07-21 | 美商昂圖創新公司 | 有信號污染下之結構測量 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200077590A (ko) | 2020-06-30 |
| TW201937297A (zh) | 2019-09-16 |
| KR102483364B1 (ko) | 2022-12-29 |
| IL274834B1 (he) | 2023-05-01 |
| US11022897B2 (en) | 2021-06-01 |
| JP2021505973A (ja) | 2021-02-18 |
| CN111433679A (zh) | 2020-07-17 |
| EP3492985A1 (en) | 2019-06-05 |
| IL274834A (he) | 2020-07-30 |
| IL274834B2 (he) | 2023-09-01 |
| WO2019110254A1 (en) | 2019-06-13 |
| US11604419B2 (en) | 2023-03-14 |
| US20210255552A1 (en) | 2021-08-19 |
| TWI711891B (zh) | 2020-12-01 |
| US20190171115A1 (en) | 2019-06-06 |
| CN111433679B (zh) | 2023-04-07 |
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