JP6976745B2 - ウエーハ生成装置 - Google Patents
ウエーハ生成装置 Download PDFInfo
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- JP6976745B2 JP6976745B2 JP2017128507A JP2017128507A JP6976745B2 JP 6976745 B2 JP6976745 B2 JP 6976745B2 JP 2017128507 A JP2017128507 A JP 2017128507A JP 2017128507 A JP2017128507 A JP 2017128507A JP 6976745 B2 JP6976745 B2 JP 6976745B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass
- B23K37/02—Carriages for supporting the welding or cutting element
- B23K37/0211—Carriages for supporting the welding or cutting element travelling on a guide member, e.g. rail, track
- B23K37/0235—Carriages for supporting the welding or cutting element travelling on a guide member, e.g. rail, track the guide member forming part of a portal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass
- B23K37/04—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
- B23K37/0408—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work for planar work
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3222—Loading to or unloading from a conveyor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic materials other than metals or composite materials
- B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Robotics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.43
集光点のZ軸方向位置 :インゴットの上面から300μm
第二の保持テーブルの送り速度 :120〜260mm/s
インデックス量 :250〜400μm
4:インゴット研削ユニット
6:レーザー照射ユニット
8:ウエーハ剥離ユニット
10:ウエーハ収容ユニット
12:搬送ユニット
14:第一の保持テーブル
16:研削手段
46:インゴット洗浄ユニット
60:第二の保持テーブル
62:レーザー照射手段
80:第三の保持テーブル
82:ウエーハ剥離手段
122:インゴット収容ユニット
170:インゴット
190:剥離層
192:ウエーハ
LB:パルスレーザー光線
Claims (3)
- インゴットからウエーハを生成するウエーハ生成装置であって、
インゴットを保持する第一の保持テーブルと該第一の保持テーブルに保持されたインゴットの上面を研削して平坦化する研削手段とから少なくとも構成されるインゴット研削ユニットと、
インゴットを保持する第二の保持テーブルと該第二の保持テーブルに保持されたインゴットの上面から生成すべきウエーハの厚みに相当する深さにインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し剥離層を形成するレーザー照射手段とから少なくとも構成されるレーザー照射ユニットと、
インゴットを保持する円形の第三の保持テーブルと該第三の保持テーブルに保持されたインゴットの上面を保持し剥離層からウエーハを剥離するウエーハ剥離手段とから少なくとも構成されるウエーハ剥離ユニットと、
剥離されたウエーハを収容するウエーハ収容ユニットと、
該インゴット研削ユニットと該レーザー照射ユニットと該ウエーハ剥離ユニットとの間でインゴットを搬送する搬送ユニットと、
から少なくとも構成され、
該ウエーハ剥離手段は、アームと、該アームを昇降させるアーム移動手段と、該アームの先端に固定され該第三の保持テーブルと協働して液体を収容する液槽体と、該液槽体に対して昇降自在かつ該第三の保持テーブルに保持されたインゴットの上面を吸着して保持する吸着片と、該液槽体に対して該吸着片を昇降させるエアシリンダと、該吸着片で吸着したインゴットに超音波振動を付与する超音波振動生成部材とを含み、
該液槽体は、円形状の天面壁と、該天面壁の周縁から垂下する円筒状の側壁とを有し、該液槽体の下端側は開放されており、該側壁の外径は該第三の保持テーブルの直径以下に形成され、
該ウエーハ剥離手段は、該アーム移動手段で該アームを下降させ、インゴットを保持した該第三の保持テーブルの上面に該液槽体の該側壁の下端を密着させることにより、該第三の保持テーブルの上面と該液槽体の内面とによって液体収容空間を規定すると共に、該エアシリンダによって該吸着片を下降させ、該第三の保持テーブルに保持されたインゴットの上面を該吸着片で吸着して保持し、該液体収容空間に液体を収容してインゴットを液体中に浸漬させた状態で、該超音波振動生成部材によってインゴットに超音波振動を付与することにより剥離層からウエーハを剥離するウエーハ生成装置。 - インゴットを収容するインゴット収容ユニットを含み、
該搬送ユニットは該インゴット収容ユニットから該レーザー照射ユニットにインゴットを搬送する請求項1記載のウエーハ生成装置。 - インゴットを洗浄するインゴット洗浄ユニットを含み、
該搬送ユニットは、該インゴット研削ユニットから該インゴット洗浄ユニットにインゴットを搬送すると共に、該インゴット洗浄ユニットから該レーザー照射ユニットにインゴットを搬送する請求項1記載のウエーハ生成装置。
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017128507A JP6976745B2 (ja) | 2017-06-30 | 2017-06-30 | ウエーハ生成装置 |
| MYPI2018702268A MY191675A (en) | 2017-06-30 | 2018-06-08 | Wafer producing apparatus |
| SG10201804904YA SG10201804904YA (en) | 2017-06-30 | 2018-06-08 | Wafer producing apparatus |
| KR1020180068731A KR102515687B1 (ko) | 2017-06-30 | 2018-06-15 | 웨이퍼 생성 장치 |
| DE102018210110.8A DE102018210110A1 (de) | 2017-06-30 | 2018-06-21 | Waferherstellungsvorrichtung |
| CN201810658962.4A CN109216159B (zh) | 2017-06-30 | 2018-06-25 | 晶片生成装置 |
| US16/020,414 US10916460B2 (en) | 2017-06-30 | 2018-06-27 | Wafer producing apparatus |
| TW107122323A TWI758505B (zh) | 2017-06-30 | 2018-06-28 | 晶圓生成裝置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017128507A JP6976745B2 (ja) | 2017-06-30 | 2017-06-30 | ウエーハ生成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019012765A JP2019012765A (ja) | 2019-01-24 |
| JP6976745B2 true JP6976745B2 (ja) | 2021-12-08 |
Family
ID=64662077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017128507A Active JP6976745B2 (ja) | 2017-06-30 | 2017-06-30 | ウエーハ生成装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10916460B2 (ja) |
| JP (1) | JP6976745B2 (ja) |
| KR (1) | KR102515687B1 (ja) |
| CN (1) | CN109216159B (ja) |
| DE (1) | DE102018210110A1 (ja) |
| MY (1) | MY191675A (ja) |
| SG (1) | SG10201804904YA (ja) |
| TW (1) | TWI758505B (ja) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7128067B2 (ja) * | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| JP7210292B2 (ja) * | 2019-01-15 | 2023-01-23 | 株式会社ディスコ | ウエーハの生成方法 |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| JP7442332B2 (ja) * | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
| JP7464472B2 (ja) * | 2020-07-17 | 2024-04-09 | 株式会社ディスコ | 加工装置 |
| JP7517936B2 (ja) * | 2020-10-01 | 2024-07-17 | 株式会社ディスコ | 加工装置 |
| JP7657042B2 (ja) * | 2020-11-19 | 2025-04-04 | 株式会社ディスコ | 加工装置 |
| JP7561605B2 (ja) | 2020-12-23 | 2024-10-04 | 株式会社ディスコ | 研削装置 |
| TWI903011B (zh) * | 2021-01-15 | 2025-11-01 | 日商東京威力科創股份有限公司 | 基板處理裝置、基板處理方法及基板製造方法 |
| CN113352230A (zh) * | 2021-06-17 | 2021-09-07 | 广东工业大学 | 一种金刚石晶片超精密加工方法及装置 |
| JP7728108B2 (ja) * | 2021-06-23 | 2025-08-22 | 株式会社ディスコ | 剥離装置 |
| JP2023041017A (ja) * | 2021-09-10 | 2023-03-23 | 株式会社ディスコ | 搬送装置および剥離装置 |
| CN113793822B (zh) * | 2021-11-17 | 2022-04-12 | 乐山高测新能源科技有限公司 | 硅棒处理系统 |
| JP7817819B2 (ja) * | 2021-12-06 | 2026-02-19 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
| CN115223851B (zh) * | 2022-09-21 | 2022-12-09 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 一种机械式晶片分离方法及装置 |
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| JP6506520B2 (ja) * | 2014-09-16 | 2019-04-24 | 株式会社ディスコ | SiCのスライス方法 |
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