JP6982964B2 - Manufacturing method of light emitting device - Google Patents

Description

The present invention relates to a method for manufacturing a light emitting device.

In recent years, an organic light emitting diode (OLED) has been developed as a light emitting device. The OLED has a first electrode, an organic layer and a second electrode. The first electrode has translucency. The second electrode has light reflectivity. The organic layer is located between the first electrode and the second electrode. The organic layer includes a light emitting layer that emits light by organic electroluminescence. The light emitting layer emits light by the voltage between the first electrode and the second electrode.

Patent Documents 1 and 2 describe an example of a method for manufacturing an OLED. Specifically, in Patent Documents 1 and 2, a patterning material having an opening is formed on a substrate, a conductive layer is formed on the substrate and the patterning material, and an organic layer is formed on the conductive layer and the patterning material. Inside the opening, the conductive layer and the organic layer are laminated on the substrate, and outside the opening, the conductive layer and the organic layer are laminated on the patterning material. Then, the patterning material is removed together with the conductive layer and the organic layer on the patterning material. In this step, the conductive layer and the organic layer on the substrate remain on the substrate. The conductive layer remaining on the substrate functions as an electrode of the OLED.

Patent Document 3 describes an example of an active matrix OLED. This OLED has a conductive layer, a plurality of first electrodes, a plurality of organic layers, and a second electrode. The conductive layer has a plurality of openings arranged in a matrix. Each of the plurality of first electrodes is located inside each of the plurality of openings and is electrically insulated from the conductive layer. Each of the plurality of organic layers overlaps with each of the plurality of first electrodes. The second electrode extends over the plurality of openings and is connected to the conductive layer in a part of the region.

Japanese Unexamined Patent Publication No. 2013-258020 Japanese Unexamined Patent Publication No. 2014-123441 Japanese Unexamined Patent Publication No. 2013-54979

Some OLEDs include a first electrode, a conductive portion, an insulating layer and a second electrode. The first electrode has translucency and has a longitudinal direction. The conductive portion is connected to the first electrode and extends in the longitudinal direction of the first electrode. The conductive portion is provided to suppress a voltage drop in the longitudinal direction of the first electrode. The insulating layer covers the conductive portion. The insulating layer is provided to define the light emitting portion of the OLED. It is desirable that the conductive portion and the insulating layer are formed by a manufacturing process as simple as possible.

As an example, the problem to be solved by the present invention is to form a conductive portion and an insulating layer by a simple manufacturing process.

The invention according to claim 1 is
The process of forming a patterning material that exposes the end of the first electrode having translucency, and
A step of forming a conductive portion on the first electrode and the patterning material, and
The step of forming an insulating layer on the conductive portion and the patterning material, and
A step of removing the patterning material after forming the conductive portion and the insulating layer,
It is a manufacturing method of a light emitting device including.

It is a top view which shows the light emitting device which concerns on embodiment. It is the figure which removed the 2nd electrode from FIG. It is the figure which removed the insulating layer from FIG. It is an enlarged view of the 1st electrode shown in FIG. FIG. 1 is a cross-sectional view taken along the line AA of FIG. It is an enlarged view of the region α shown in FIG. It is a figure for demonstrating an example of the operation of the light emitting device shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure which shows the modification of FIG. It is a figure which shows the 1st modification of FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure which shows the 2nd modification of FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting apparatus shown in FIG. It is a figure which shows the electron microscope image of the end portion of the 1st electrode shown in FIG. 12 and the periphery thereof. (A) is a diagram showing an electron microscope image of the conductive portion, the insulating layer and the patterning material shown in FIG. 11, and (b) is a diagram showing an electron microscope image of the conductive portion and the insulating layer shown in FIG. Is. It is a figure for demonstrating the reason why the 2nd angle θ2 and the 4th angle θ4 (for example, FIG. 9) can be adjusted by the time of PEB of the resist forming a patterning material. It is a figure which shows the electron microscope image of the patterning material 400.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all drawings, similar components are designated by the same reference numerals, and description thereof will be omitted as appropriate.

FIG. 1 is a plan view showing a light emitting device 10 according to an embodiment. FIG. 2 is a diagram in which the second electrode 130 is removed from FIG. FIG. 3 is a diagram in which the insulating layer 300 is removed from FIG. FIG. 4 is an enlarged view of the first electrode 110 shown in FIG. FIG. 5 is a cross-sectional view taken along the line AA of FIG. FIG. 6 is an enlarged view of the region α shown in FIG. For the sake of explanation, in FIGS. 1 to 3, the conductive portion 200 shown in FIG. 4 is removed, and the organic layer 120 shown in FIGS. 5 and 6 is removed.

In the examples shown in FIGS. 1 to 6, the X direction is defined as a direction along the longitudinal direction of the light emitting portion 142, and the Y direction is a direction intersecting the X direction, more specifically orthogonal to the X direction. In particular, in the examples shown in FIGS. 1 to 3, the direction is along the lateral direction of the light emitting unit 142.

The outline of the light emitting device 10 will be described with reference to FIG. The light emitting device 10 includes a substrate 100, a first electrode 110, an organic layer 120, a conductive portion 200, and an insulating layer 300. The substrate 100 has a first surface 102. The first electrode 110 is on the first surface 102 of the substrate 100. The first electrode 110 has translucency. The organic layer 120 is on the first electrode 110. The organic layer 120 includes a light emitting layer. The conductive portion 200 covers the end portion 110E of the first electrode 110. The insulating layer 300 covers the conductive portion 200. The insulating layer 300 has a protrusion protruding toward the outside of the conductive portion 200, and in particular, in the example shown in FIG. 6, the protrusion 310 (first protrusion) and the protrusion 320 (second protrusion). have. The protrusion 310 is in contact with the first electrode 110, and the protrusion 320 is in contact with the substrate 100.

The above-mentioned protruding portion of the insulating layer 300 has an inclined surface that is inclined so that the thickness of the protruding portion becomes thinner toward the outside of the conductive portion 200, and particularly in the example shown in FIG. 6, the protruding portion 310 has an inclined surface. It has a first inclined surface 312, and the protrusion 320 has a first inclined surface 322. That is, the thickness of the protrusion 310 becomes thinner toward the outside of the conductive portion 200 due to the first inclined surface 312, and the thickness of the protrusion 320 becomes thinner toward the outside of the conductive portion 200 due to the first inclined surface 322. It is getting thinner toward.

The protrusions 310 and 320 are formed when the manufacturing process newly devised by the present inventor is adopted, as will be described later with reference to FIGS. 8 to 12. As will be described later with reference to FIGS. 8 to 12, the conductive portion 200 and the insulating layer 300 can be formed by a simple manufacturing process by adopting the process.

Next, the details of the plane layout of the light emitting device 10 will be described with reference to FIGS. 1 to 3. The light emitting device 10 includes a substrate 100, a plurality of first electrodes 110, a plurality of first connection portions 112, a first wiring 114, a plurality of second electrodes 130, a plurality of second connection portions 132, and a second wiring 134. There is.

The shape of the substrate 100 is a rectangle having a long side along the X direction and a short side along the Y direction. However, the shape of the substrate 100 is not limited to this example. The shape of the substrate 100 may be, for example, a circle or a polygon other than a rectangle.

The plurality of first electrodes 110 are located apart from each other, and specifically, they are arranged in a row along the X direction. Each of the plurality of first electrodes 110 extends in the Y direction.

Each of the plurality of first connection portions 112 is connected to each of the plurality of first electrodes 110. In the example shown in FIG. 3, the first connection portion 112 is integrated with the first electrode 110.

The first wiring 114 is connected to a plurality of first connection portions 112. The first wiring 114 extends in the X direction. The voltage from the outside is supplied to the first electrode 110 via the first wiring 114 and the first connection portion 112.

Each of the plurality of second electrodes 130 overlaps with each of the plurality of first electrodes 110. The plurality of second electrodes 130 are located apart from each other, and specifically, they are arranged in a row along the X direction. Each of the plurality of second electrodes 130 extends in the Y direction.

Each of the plurality of second connecting portions 132 is connected to each of the plurality of second electrodes 130.

The second wiring 134 is connected to a plurality of second connection portions 132. The second wiring 134 extends in the X direction. The voltage from the outside is supplied to the second electrode 130 via the second wiring 134 and the second connection portion 132.

The light emitting device 10 includes a light emitting region 140. The light emitting region 140 includes a plurality of light emitting units 142 and a plurality of translucent units 144. The plurality of light emitting portions 142 and the plurality of translucent portions 144 are alternately arranged along the X direction. As will be described later with reference to FIG. 5, each of the plurality of light emitting portions 142 is defined by the opening 302 of the insulating layer 300. In the examples shown in FIGS. 1 to 3, each light emitting unit 142 extends in the Y direction. Each of the plurality of translucent portions 144 does not overlap with the light-shielding member, specifically, the second electrode 130 and the conductive portion 200 (FIGS. 4 to 6), and the light from the outside is the translucent portion 144. Can be transmitted through.

Next, the details of the planar layout of the first electrode 110 will be described with reference to FIG. The light emitting device 10 includes a first electrode 110 and two conductive portions 200.

The first electrode 110 has two ends 110E. The two ends 110E extend in the Y direction.

The two conductive portions 200 overlap with the two end portions 110E of the first electrode 110, respectively, and extend in the Y direction. The conductive portion 200 includes a material having a conductivity higher than that of the conductive material contained in the first electrode 110. Therefore, the conductive portion 200 functions as an auxiliary electrode of the first electrode 110, and can suppress the voltage drop in the Y direction.

Next, the details of the cross-sectional structure of the light emitting device 10 will be described with reference to FIG. The light emitting device 10 includes a substrate 100, a first electrode 110, an organic layer 120, a second electrode 130, a conductive portion 200, and an insulating layer 300. The substrate 100 has a first surface 102. The first electrode 110, the organic layer 120, the second electrode 130, the conductive portion 200, and the insulating layer 300 are all on the first surface 102 of the substrate 100. The second surface 104 is on the opposite side of the first surface 102.

In the example shown in FIG. 5, the light emitting device 10 functions as a bottom emission. That is, the light emitted from the organic layer 120 is mainly output from the second surface 104 of the substrate 100. That is, the second surface 104 of the substrate 100 functions as a light emitting surface of the light emitting device 10.

The substrate 100 has translucency. The substrate 100 contains, for example, glass or resin.

The first electrode 110 has translucency and conductivity. Specifically, the first electrode 110 contains a material having translucency and conductivity, for example, a metal oxide, specifically, for example, ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide). Contains at least one. As a result, the light from the organic layer 120 can pass through the first electrode 110.

The organic layer 120 includes, in one example, a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL). In this example, holes are injected into the EML from the first electrode 110 via the HIL and HTL, electrons are injected into the EML from the second electrode 130 via the EIL and ETL, and the holes and electrons are re-injected in the EML. Combined, light is emitted from the EML.

The second electrode 130 has a light-shielding property, more specifically, a light reflectivity, and further has a conductivity. Therefore, the light from the organic layer 120 is reflected by the second electrode 130 with almost no transmission through the second electrode 130. In one example, the second electrode 130 contains a material having light reflectivity and conductivity, such as a metal, specifically at least one of, for example, Al, Ag and MgAg.

The conductive portion 200 has conductivity, and more specifically, contains a conductive material having a conductivity higher than that of the conductive material (for example, an oxide semiconductor) contained in the first electrode 110. .. Therefore, the conductive portion 200 can function as an auxiliary electrode of the first electrode 110.

The conductive portion 200 has a light-shielding property, more specifically, a light reflection property. Therefore, the conductive portion 200 can block the light emitted from the organic layer 120 and reflected by the second surface 104 of the substrate 100 (details will be described later with reference to FIG. 7).

In one example, the conductive portion 200 contains at least one of a metal, specifically, Al and Mo, and more specifically, MAM (Mo / Al / Mo).

In the example shown in FIG. 5, the insulating layer 300 has translucency. Therefore, the light from the outside can pass through the insulating layer 300. In one example, the insulating layer 300 contains an inorganic material, specifically a silicon oxide (SiO ₂ ).

The insulating layer 300 has an opening 302, and inside the opening 302, the first electrode 110, the organic layer 120, and the second electrode 130 are laminated so as to form the light emitting portion 142. In other words, the insulating layer 300 defines the light emitting unit 142. In the example shown in FIG. 5, the organic layer 120 extends over a plurality of light emitting portions 142.

The translucent portion 144 is located between the adjacent light emitting portions 142, and does not overlap with the light shielding member, particularly the second electrode 130 and the conductive portion 200 in the example shown in FIG. Therefore, the light from the outside of the light emitting device 10 can pass through the translucent portion 144.

The light emitting device 10 functions as a transflective OLED. Specifically, when no light is emitted from the plurality of light emitting units 142, the translucent unit 144 allows the object on the first surface 102 side to be seen through from the second surface 104 side by human vision, and the second surface. The object on the surface 104 side can be seen through from the first surface 102 side. Further, the light from the plurality of light emitting units 142 is mainly output from the second surface 104 side, and is hardly output from the first surface 102 side. When light is emitted from a plurality of light emitting units 142, the object on the second surface 104 side can be seen through by the translucent unit 144 from the first surface 102 side in human vision.

Next, the details of the cross-sectional structure of the light emitting device 10 will be further described with reference to FIG.

The conductive portion 200 covers the end portion 110E of the first electrode 110, and more specifically, extends from the inside to the outside of the first electrode 110 across the end portion 110E of the first electrode 110. Therefore, the first electrode 110 is covered with the conductive portion 200 at the end portion 110E and its periphery. Therefore, it is possible to prevent the light emitted from the organic layer 120 and reflected by the second surface 104 (FIG. 5) of the substrate 100 from leaking from the first electrode 110 in and around the end portion 110E.

The insulating layer 300 covers the conductive portion 200. In particular, in the example shown in FIG. 6, the width of the insulating layer 300 is wider than the width of the conductive portion 200, and any portion of the conductive portion 200 is covered with the insulating layer 300. More specifically, the conductive portion 200 has an end portion 210E and an end portion 220E, the end portion 210E is in contact with the first electrode 110, and the end portion 220E is on the opposite side of the end portion 210E. It is in contact with the substrate 100. The insulating layer 300 has an end portion 310E and an end portion 320E, the end portion 310E is in contact with the first electrode 110, and the end portion 320E is on the opposite side of the end portion 310E and is in contact with the substrate 100. ing. The end portion 310E of the insulating layer 300 is outside the end portion 210E of the conductive portion 200, and the end portion 320E of the insulating layer 300 is outside the end portion 220E of the conductive portion 200.

The insulating layer 300 has a protrusion 310 and a protrusion 320. The protrusion 310 is in contact with the first electrode 110, and the protrusion 320 is in contact with the substrate 100. In the example shown in FIG. 6, the tip of the protrusion 310 is the end 310E of the protrusion 310, and the tip of the protrusion 320 is the end 320E of the protrusion 310.

The protrusion 310 has a first inclined surface 312, and the thickness of the protrusion 310 becomes thinner toward the outside of the conductive portion 200 due to the first inclined surface 312. As will be described later with reference to FIGS. 8 to 12, the protrusion 310 is formed when the manufacturing process newly devised by the present inventor is adopted.

The protrusion 320 has a first inclined surface 322, and the thickness of the protrusion 320 becomes thinner toward the outside of the conductive portion 200 due to the first inclined surface 322. As will be described later with reference to FIGS. 8 to 12, the protrusion 320 is formed when the manufacturing process newly devised by the present inventor is adopted.

The insulating layer 300 has a second inclined surface 314. The second inclined surface 314 is inside the protrusion 310 and intersects the first inclined surface 312. The inclination of the first inclined surface 312 with respect to the first surface 102 of the substrate 100 is smaller than the inclination of the second inclined surface 314 with respect to the first surface 102 of the substrate 100. As will be described later with reference to FIGS. 8 to 12, the relationship between the inclination of the first inclined surface 312 and the inclination of the second inclined surface 314 occurs when the manufacturing process newly devised by the present inventor is adopted.

The insulating layer 300 has a second inclined surface 324. The second inclined surface 324 is inside the protrusion 320 and intersects the first inclined surface 322. The inclination of the first inclined surface 322 with respect to the first surface 102 of the substrate 100 is smaller than the inclination of the second inclined surface 324 with respect to the first surface 102 of the substrate 100. As will be described later with reference to FIGS. 8 to 12, the relationship between the inclination of the first inclined surface 322 and the inclination of the second inclined surface 324 occurs when the manufacturing process newly devised by the present inventor is adopted.

In the example shown in FIG. 6, the width of the second electrode 130 is wider than the width of the first electrode 110, and the end portion 130E of the second electrode 130 is larger than the end portion 110E of the first electrode 110 in the X direction. It's on the outside. Further, in the example shown in FIG. 6, the insulating layer 300 includes a region outside the end 130E of the second electrode 130, so that the end 320E of the insulating layer 300 is the end 130E of the second electrode 130. It is on the outside. In this way, the end 130E of the second electrode 130 is located between the end 110E of the first electrode 110 and the end 320E of the insulating layer 300 in the X direction.

FIG. 7 is a diagram for explaining an example of the operation of the light emitting device 10 shown in FIG.

In the example shown in FIG. 7, the light emitted from the organic layer 120 passes through the first electrode 110 and the substrate 100 and is reflected by Fresnel reflection on the second surface 104 (FIG. 5) of the substrate 100. In the example shown in FIG. 7, this light is blocked by the conductive portion 200. That is, the conductive portion 200 prevents light from leaking from the first electrode 110 in and around the end portion 110E of the first electrode 110. Therefore, the conductive portion 200 makes it possible to suppress the amount of light leaking to the opposite side of the light emitting surface of the light emitting device 10 (the second surface 104 (FIG. 5) of the substrate 100).

Each figure from FIG. 8 to FIG. 12 is a diagram for explaining an example of the manufacturing method of the light emitting device 10 shown in FIG. The light emitting device 10 shown in FIG. 6 can be manufactured as follows.

First, as shown in FIG. 8, the first electrode 110 is formed on the first surface 102 of the substrate 100. In one example, the first electrode 110 can be formed by patterning a conductive layer. The first connection portion 112 and the second connection portion 132 (FIGS. 1 to 3) may be formed by patterning a conductive layer common to the first electrode 110.

Next, as shown in FIG. 9, the patterning material 400 is formed. The patterning material 400 exposes the end 110E of the first electrode 110. More specifically, the patterning material 400 has a first inner side surface 410 and a second inner side surface 420. The first inner side surface 410 is inside the end 110E of the first electrode 110. The second inner side surface 420 is outside the end 110E of the first electrode 110 and faces the first inner side surface 410. The end portion 110E of the first electrode 110 is exposed from between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400.

In the example shown in FIG. 9, the distance between the first inner side surface 410 and the second inner side surface 420 increases toward the lower end of the patterning material 400.

In the example shown in FIG. 9, the first inner side surface 410 has an inclined surface 412 and an inclined surface 414. The inclined surface 414 is located closer to the lower end of the patterning material 400 than the inclined surface 412, and intersects the first electrode 110. The inclined surface 412 is inclined at a first angle θ1 from the direction toward the lower end of the patterning material 400 along the thickness direction of the patterning material 400, and the inclined surface 414 is the patterning material along the thickness direction of the patterning material 400. It is tilted at the second angle θ2 from the direction toward the lower end of 400. The second angle θ2 is larger than the first angle θ1.

In the example shown in FIG. 9, the second inner side surface 420 has an inclined surface 422 and an inclined surface 424. The inclined surface 424 is located closer to the lower end of the patterning material 400 than the inclined surface 422 and intersects the substrate 100. The inclined surface 422 is inclined at a third angle θ3 from the direction toward the lower end of the patterning material 400 along the thickness direction of the patterning material 400, and the inclined surface 424 is the patterning material along the thickness direction of the patterning material 400. It is tilted at a fourth angle θ4 from the direction toward the lower end of 400. The fourth angle θ4 is larger than the third angle θ3.

The second angle θ2 of the inclined surface 414 and the fourth angle θ4 of the inclined surface 424 are adjusted by, for example, the time of PEB (Post Exposure Bake) of the resist forming the patterning material 400, as will be described later with reference to FIG. be able to.

Next, as shown in FIG. 10, a conductive layer is formed on the substrate 100, the first electrode 110, and the patterning material 400. As a result, the conductive portion 200 is formed between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, and the conductive portion 201 is formed on the patterning material 400. That is, the conductive portion 200 can be formed in a self-aligned manner by the patterning material 400.

In order to prevent the conductive portion 200 from being formed over a wide area along the X direction, the conductive portion 200 is, in other words, as described later with reference to FIG. 11, the entire conductive portion 200 is formed by the insulating layer 300 in the X direction. It is formed by a deposition method with poor step coverage so that it can be covered. In particular, in the example shown in FIG. 10, the conductive portion 200 is formed by thin film deposition.

Next, as shown in FIG. 11, an insulating layer is formed on the substrate 100, the first electrode 110, the conductive portion 200, and the patterning material 400. As a result, the insulating layer 300 is formed between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, and the insulating layer 301 is formed on the patterning material 400. That is, the insulating layer 300 can be formed in a self-aligned manner by the patterning material 400.

The insulating layer 300 is formed by a deposition method having excellent step covering property so that the entire conductive portion 200 is covered by the insulating layer 300 in the X direction. In particular, in the example shown in FIG. 11, the insulating layer 300 is formed by sputtering. Therefore, the insulating layer 300 is made of a material that can be deposited by spatter, particularly an inorganic material in the example shown in FIG.

In the examples shown in FIGS. 10 and 11, the conductive portion 200 and the insulating layer 300 are self-aligned with a common patterning material, that is, the patterning material 400. Therefore, it is not necessary to separately provide a mask for forming the conductive portion 200 (for example, a metal mask) and a mask for forming the insulating layer 300 (for example, a resist pattern). Therefore, according to the examples shown in FIGS. 10 and 11, the conductive portion 200 and the insulating layer 300 can be formed by a simple manufacturing process.

In the example shown in FIGS. 9 to 11, the conductive portion in the X direction is determined by the inclination of the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, the method of depositing the conductive portion 200, and the method of depositing the insulating layer 300. It is possible to allow the entire 200 to be covered by the insulating layer 300. Specifically, the distance between the first inner side surface 410 and the second inner side surface 420 increases toward the lower end of the patterning material 400. The method of depositing the conductive portion 200 is inferior in the step covering property. On the other hand, the method of depositing the insulating layer 300 is excellent in step covering property. Therefore, the conductive portion 200 and the insulating layer 300 can be deposited so that the width of the insulating layer 300 is wider than the width of the conductive portion 200. In this way, the entire conductive portion 200 is covered with the insulating layer 300 in the X direction.

The protruding portion 310 of the insulating layer 300 is formed by an insulating layer that has entered the space on the first electrode 110 and below the inclined surface 414 of the patterning material 400. Therefore, the inclination of the first inclined surface 312 of the protrusion 310 with respect to the first surface 102 of the substrate 100 is gentle, and specifically, the second inclined surface of the insulating layer 300 with respect to the first surface 102 of the substrate 100. It is smaller than the slope with respect to 314.

The protruding portion 320 of the insulating layer 300 is formed by an insulating layer that has entered the space on the first surface 102 of the substrate 100 and below the inclined surface 424 of the patterning material 400. Therefore, the inclination of the first inclined surface 322 of the protrusion 320 with respect to the first surface 102 of the substrate 100 is gentle, and specifically, the second inclined surface of the insulating layer 300 with respect to the first surface 102 of the substrate 100. It is smaller than the slope with respect to 324.

In the example shown in FIG. 11, the insulating layer 301 extends over the inclined surface 412 of the first inner side surface 410 and the inclined surface 422 of the second inner side surface 420 due to the step covering property. However, in the example shown in FIG. 11, the insulating layer 301 is prevented from reaching the first electrode 110 via the inclined surface 412 of the first inner side surface 410 by the inclined surface 414 of the first inner side surface 410, and the insulating layer is prevented. The inclined surface 424 of the second inner side surface 420 prevents 301 from reaching the substrate 100 via the inclined surface 422 of the second inner side surface 420. Specifically, the inclination of the inclined surface 414 with respect to the depth direction of the patterning material 400 (corresponding to the second angle θ2) is from the inclination of the inclined surface 412 with respect to the depth direction of the patterning material 400 (corresponding to the first angle θ1). Therefore, the insulating layer 301 is difficult to spread along the inclined surface 414. Similarly, the inclination of the inclined surface 424 with respect to the depth direction of the patterning material 400 (corresponding to the fourth angle θ4) is larger than the inclination of the inclined surface 422 with respect to the depth direction of the patterning material 400 (corresponding to the third angle θ3). Therefore, the insulating layer 301 is difficult to spread along the inclined surface 424.

Then, as shown in FIG. 12, the patterning material 400 (FIG. 11) is removed. As a result, the conductive portion 201 and the insulating layer 301 (FIG. 11) are removed together with the patterning material 400. The patterning material 400 can be removed by a stripping solution. In one example, the release liquid can be sprayed from the patterning material 400. In another example, ultrasonic cleaning may be applied to the patterning material 400 impregnated with the stripping liquid.

In the examples shown in FIGS. 11 and 12, the stripping liquid can enter the space on the first electrode 110 and below the inclined surface 414 of the patterning material 400, and on the first surface 102 of the substrate 100 and on the patterning material 400. It is possible to enter the space under the inclined surface 424. In particular, in the example shown in FIG. 11, the inclined surface 414 and the inclined surface 424 of the patterning material 400 are not covered with the insulating layer 301. Therefore, the release liquid can come into contact with the patterning material 400 from the space on the first electrode 110 and under the inclined surface 414 of the patterning material 400, and on the first surface 102 of the substrate 100 and below the inclined surface 424 of the patterning material 400. The patterning material 400 can be contacted from the space of.

In the examples shown in FIGS. 11 and 12, the conductive portion 200 can be prevented from being dissolved in the stripping liquid. If the stripping liquid comes into contact with the conductive portion 200, the conductive portion 200 may dissolve in the stripping liquid, especially when the stripping liquid contains an alkali and the conductive portion 200 contains Al. On the other hand, in the example shown in FIG. 11, the entire conductive portion 200 is covered with the insulating layer 300 in the X direction. Therefore, the conductive portion 200 can be shielded from the stripping liquid by the insulating layer 300, and the conductive portion 200 can be prevented from being dissolved in the stripping liquid.

In the examples shown in FIGS. 11 and 12, corrosion of the conductive portion 200 due to ultrasonic waves of ultrasonic cleaning can be prevented. If the surface of the conductive portion 200 is exposed, the conductive portion 200 may be corroded by the ultrasonic wave of ultrasonic cleaning when ultrasonic cleaning is used to remove the patterning material 400. On the other hand, in the example shown in FIG. 11, the entire conductive portion 200 is covered with the insulating layer 300 in the X direction. Therefore, the conductive portion 200 can be shielded from the ultrasonic waves by the insulating layer 300, and the corrosion of the conductive portion 200 due to the ultrasonic waves of ultrasonic cleaning can be prevented.

Next, the organic layer 120 is formed. In one example, the organic layer 120 can be formed by a vapor deposition or coating process.

Next, the second electrode 130 is formed. In one example, the second electrode 130 can be formed by thin film deposition, more specifically vacuum film deposition.

In this way, the light emitting device 10 shown in FIG. 6 can be manufactured.

As described above, according to the present embodiment, the conductive portion 200 and the insulating layer 300 can be formed by a simple manufacturing process.

FIG. 13 is a diagram showing a modified example of FIG.

In the example shown in FIG. 13, the insulating layer 300 has light absorption. Therefore, the insulating layer 300 can block the light emitted from the organic layer 120 and reflected by the second surface 104 of the substrate 100.

In one example, the insulating layer 300 contains silicon nitride (SiN). In this example, the absorbance of the insulating layer 300 can be adjusted by the nitrogen composition ratio in the silicon nitride.

FIG. 14 is a diagram showing a first modification of FIG. Each figure from FIG. 15 to FIG. 17 is a diagram for explaining an example of the manufacturing method of the light emitting device 10 shown in FIG.

In the example shown in FIG. 14, the insulating layer 300 does not have a protrusion 310 and a protrusion 320 (FIG. 6). The reason why the protrusions 310 and 320 are absent is that the inclination of the first inner side surface 410 with respect to the thickness direction of the patterning material 400 and the thickness direction of the patterning material 400 are described later with reference to FIGS. 15 to 17. This is because the inclination of the second inner side surface 420 with respect to the above is constant from the upper end to the lower end of the patterning material 400.

An example of a method for manufacturing the light emitting device 10 will be described with reference to FIGS. 15 to 17.

First, the first electrode 110 is formed in the same manner as in FIG. 8 of the embodiment.

Next, as shown in FIG. 15, the patterning material 400 is formed. The patterning material 400 exposes the end 110E of the first electrode 110.

In the example shown in FIG. 15, the distance between the first inner side surface 410 and the second inner side surface 420 increases toward the lower end of the patterning material 400. Further, in the example shown in FIG. 15, the inclination of the first inner side surface 410 with respect to the thickness direction of the patterning material 400 and the inclination of the second inner side surface 420 with respect to the thickness direction of the patterning material 400 are from the upper end to the lower end of the patterning material 400. It is constant.

Next, as shown in FIG. 16, a conductive layer is formed on the substrate 100, the first electrode 110, and the patterning material 400. As a result, the conductive portion 200 is formed between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, and the conductive portion 201 is formed on the patterning material 400. That is, the conductive portion 200 can be formed in a self-aligned manner by the patterning material 400.

In the example shown in FIG. 16, the conductive portion 200 is formed by a deposition method inferior in step covering property, specifically, by vapor deposition, for the same reason as described with reference to FIG.

Next, as shown in FIG. 17, an insulating layer is formed on the substrate 100, the first electrode 110, the conductive portion 200, and the patterning material 400. As a result, the insulating layer 300 is formed between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, and the insulating layer 301 is formed on the patterning material 400. That is, the insulating layer 300 can be formed in a self-aligned manner by the patterning material 400.

In the example shown in FIG. 17, the insulating layer 300 is formed by a deposition method having excellent step covering property, specifically, spatter, for the same reason as described with reference to FIG.

In the examples shown in FIGS. 16 and 17, the conductive portion 200 and the insulating layer 300 can be formed by a simple manufacturing process in the same manner as in the examples shown in FIGS. 10 and 11.

In the examples shown in FIGS. 15 to 17, it is possible to cover the entire conductive portion 200 with the insulating layer 300 in the X direction in the same manner as in the examples shown in FIGS. 9 to 11.

Next, the patterning material 400 is removed in the same manner as in FIG. 12 of the embodiment. Next, the organic layer 120 and the second electrode 130 are formed in the same manner as in the embodiment.

In this way, the light emitting device 10 shown in FIG. 14 can be manufactured.

FIG. 18 is a diagram showing a second modification of FIG. Each figure from FIG. 19 to FIG. 21 is a diagram for explaining an example of the manufacturing method of the light emitting device 10 shown in FIG.

In the example shown in FIG. 18, the width of the insulating layer 300 is equal to the width of the conductive portion 200. More specifically, the conductive portion 200 has an end face 210S and an end face 220S, the end face 210S is in contact with the first electrode 110, and the end face 220S is on the opposite side of the end face 210S to the substrate 100. I'm in contact. The insulating layer 300 has an end face 310S and an end face 320S, the end face 310S is on the first electrode 110 side, and the end face 320S is on the opposite side of the end face 310S. The end face 210S of the conductive portion 200 is exposed from the insulating layer 300, and in particular, in the example shown in FIG. 18, it is aligned with the end face 310S of the insulating layer 300. The end face 220S of the conductive portion 200 is exposed from the insulating layer 300, and in particular, in the example shown in FIG. 18, it is aligned with the end face 320S of the insulating layer 300. The reason why the end face 210S and the end face 220S of the conductive portion 200 are exposed from the insulating layer 300 is that the first inner side surface 410 and the second inner side surface 420 of the patterning material 400 are exposed as described later with reference to FIGS. 19 to 21. This is due to the fact that the patterning material 400 is along the thickness direction.

An example of a method for manufacturing the light emitting device 10 will be described with reference to FIGS. 19 to 21.

First, the first electrode 110 is formed in the same manner as in FIG. 8 of the embodiment.

Next, as shown in FIG. 19, the patterning material 400 is formed. The patterning material 400 exposes the end 110E of the first electrode 110.

In the example shown in FIG. 19, the first inner side surface 410 and the second inner side surface 420 of the patterning material 400 are along the thickness direction of the patterning material 400.

Next, as shown in FIG. 20, a conductive layer is formed on the substrate 100, the first electrode 110, and the patterning material 400. As a result, the conductive portion 200 is formed between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, and the conductive portion 201 is formed on the patterning material 400. That is, the conductive portion 200 can be formed in a self-aligned manner by the patterning material 400.

In the example shown in FIG. 20, the width of the conductive portion 200 is defined by the distance between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400.

Next, as shown in FIG. 21, an insulating layer is formed on the substrate 100, the first electrode 110, the conductive portion 200, and the patterning material 400. As a result, the insulating layer 300 is formed between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400, and the insulating layer 301 is formed on the patterning material 400. That is, the insulating layer 300 can be formed in a self-aligned manner by the patterning material 400.

In the example shown in FIG. 21, the width of the insulating layer 300 is defined by the distance between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400.

In the examples shown in FIGS. 20 and 21, the conductive portion 200 and the insulating layer 300 can be formed by a simple manufacturing process in the same manner as in the examples shown in FIGS. 10 and 11.

In the example shown in FIGS. 19 to 21, the end face 210S and the end face 220S of the conductive portion 200 are exposed from the insulating layer 300. Specifically, the first inner side surface 410 and the second inner side surface 420 of the patterning material 400 are along the thickness direction of the patterning material 400. The width of the conductive portion 200 and the width of the insulating layer 300 are defined by a common width by the distance between the first inner side surface 410 and the second inner side surface 420 of the patterning material 400. Therefore, the end face 210S and the end face 220S of the conductive portion 200 are exposed from the insulating layer 300.

Next, the patterning material 400 is removed in the same manner as in FIG. 12 of the embodiment. Next, the organic layer 120 and the second electrode 130 are formed in the same manner as in the embodiment.

In this way, the light emitting device 10 shown in FIG. 18 can be manufactured.

FIG. 22 is a diagram showing an electron microscope image of the end 110E of the first electrode 110 shown in FIG. 12 and its surroundings. FIG. 23A is a diagram showing electron microscope images of the conductive portion 200, the insulating layer 300, and the patterning material 400 shown in FIG. FIG. 23B is a diagram showing an electron microscope image of the conductive portion 200 and the insulating layer 300 shown in FIG.

In the examples shown in FIGS. 22 and 23, the light emitting device 10 was manufactured by the same method as that of the embodiment.

As shown in FIG. 22, the conductive portion 200 covers the end portion 110E of the first electrode 110. Further, the conductive portion 200 extends from the inside to the outside of the first electrode 110 across the end portion 110E of the first electrode 110. The insulating layer 300 covers the conductive portion 200.

As shown in FIGS. 23 (a) and 23 (b), the insulating layer 300 has a protrusion 320. The protrusion 320 has a first inclined surface 322, and the thickness of the protrusion 320 becomes thinner toward the outside of the conductive portion 200 due to the first inclined surface 322. The insulating layer 300 has a second inclined surface 324. The inclination of the first inclined surface 312 with respect to the first surface 102 of the substrate 100 is smaller than the inclination of the second inclined surface 314 with respect to the first surface 102 of the substrate 100.

FIG. 24 is a diagram for explaining the reason why the second angle θ2 and the fourth angle θ4 (for example, FIG. 9) can be adjusted by the time of PEB of the resist forming the patterning material 400.

The present inventor can adjust the second angle θ2 and the fourth angle θ4 (for example, FIG. 9) depending on the time of the PEB of the resist forming the patterning material 400, in particular, the PEB of the resist forming the patterning material 400. It was found that the shorter the time of, the larger the second angle θ2 and the fourth angle θ4 (for example, FIG. 9). The present inventor presumed that the reason for this was that the patterning material 400 was formed as follows.

First, as shown in FIG. 24 (a), the resist 402 is exposed using the mask MK. The resist 402 is formed by applying a resist and pre-baking the resist. In the example shown in FIG. 24 (a), the resist 402 is a negative resist. Therefore, in the resist 402, a cross-linking reaction occurs in the exposed portion, and the resist 402 is developed so that the exposed portion remains as described later with reference to FIG. 24 (c).

In FIG. 24A, a region (reaction region) in which the cross-linking reaction occurs due to exposure is shown by a broken line. As shown in FIG. 24 (a), the reaction region narrows toward the lower end of the resist 402. This is because the amount of light reaching the lower end of the resist 402 decreases as the distance from the center of the opening of the mask MK increases. In particular, the present inventor has speculated that the reaction region tends to be narrower in the vicinity of the lower end of the resist 402 than in the upper end of the resist 402 and its periphery.

Then, as shown in FIG. 24 (b), PEB of the resist 402 is carried out. As shown by the black arrow in FIG. 24 (b), the present inventor presumed that PEB widens the width of the reaction region in the vicinity of the lower end of the patterning material 400. That is, as the PEB time becomes longer, the width of the reaction region becomes wider in the vicinity of the lower end of the patterning material 400, in other words, the second angle θ2 and the fourth angle θ4 (for example, FIG. 9) after exposure become smaller. , The inventor speculated.

Then, as shown in FIG. 24 (c), the resist 402 is developed. By development, the resist 402 (patterning material 400) comes to have an inclined surface 412 and an inclined surface 414. In particular, the second angle θ2 of the inclined surface 414 can be adjusted by the time of PEB as described with reference to FIG. 24 (b).

FIG. 25 is a diagram showing an electron microscope image of the patterning material 400. In FIG. 25 (a), the patterning material 400 was formed with the PEB time set to 175 seconds. In FIG. 25 (b), the patterning material 400 was formed with the PEB time set to 145 seconds. In FIG. 25 (c), the patterning material 400 was formed with the PEB time set to 115 seconds.

The results shown in FIGS. 25 (a), 25 (b) and 25 (c) suggest that the second angle θ2 becomes larger as the PEB time becomes shorter. Specifically, in FIGS. 25 (a), 25 (b) and 25 (c), the second angle θ2 (for example, FIG. 9) increases from FIG. 25 (a) to FIG. 25 (c). It has become. Therefore, it can be said that the results shown in FIGS. 25 (a), 25 (b), and 25 (c) suggest that the second angle θ2 becomes larger as the PEB time becomes shorter.

Although the embodiments and examples have been described above with reference to the drawings, these are examples of the present invention, and various configurations other than the above can be adopted.

10 Light emitting device 100 Board 102 First surface 104 Second surface 110 First electrode 112 First connection part 114 First wiring 120 Organic layer 130 Second electrode 132 Second connection part 134 Second wiring 140 Light emitting area 142 Light emitting part 144 Transparent Optical part 200 Conductive part 201 Conductive part 300 Insulation layer 301 Insulation layer 302 Opening 310 Protruding part 312 First inclined surface 314 Second inclined surface 320 Protruding part 322 First inclined surface 324 Second inclined surface 400 Patterning material 410 First inner surface 412 Inclined surface 414 Inclined surface 420 Second inner surface 422 Inclined surface 424 Inclined surface

Claims (8)

The process of forming a patterning material that exposes the end of the first electrode having translucency, and
A step of forming a conductive portion on the first electrode and the patterning material, and
The step of forming an insulating layer on the conductive portion and the patterning material, and
A step of removing the conductive portion and the insulating layer together with the patterning material after forming the conductive portion and the insulating layer .
A step of forming an organic layer including a light emitting layer on the first electrode after removing the patterning material, and a step of forming the organic layer.
The step of forming the second electrode on the organic layer and
A method of manufacturing a light emitting device, including. In the method for manufacturing a light emitting device according to claim 1,
The patterning material has a first inner side surface and a second inner side surface facing the first inner side surface.
The end portion of the first electrode is exposed from between the first inner side surface and the second inner side surface of the patterning material.
A method for manufacturing a light emitting device, in which the distance between the first inner side surface and the second inner side surface increases toward the lower end of the patterning material. In the method for manufacturing a light emitting device according to claim 2,
The first inner surface is
A first inclined surface that is inclined at a first angle from a direction toward the lower end of the patterning material along the thickness direction of the patterning material.
A second inclined surface that is located closer to the lower end of the patterning material than the first inclined surface and is inclined at a second angle from the direction toward the lower end of the patterning material along the thickness direction of the patterning material.
Have,
The method for manufacturing a light emitting device, wherein the second angle is larger than the first angle. In the method for manufacturing a light emitting device according to claim 3,
The second inner surface is
A third inclined surface that is inclined at a third angle from the direction toward the lower end of the patterning material along the thickness direction of the patterning material.
A fourth inclined surface that is located closer to the lower end of the patterning material than the third inclined surface and is inclined at a fourth angle from the direction toward the lower end of the patterning material along the thickness direction of the patterning material.
Have,
The method for manufacturing a light emitting device, wherein the fourth angle is larger than the third angle. In the method for manufacturing a light emitting device according to any one of claims 1 to 4.
In the step of forming the conductive portion, the conductive portion is formed by thin film deposition.
A method for manufacturing a light emitting device, wherein the insulating layer is formed by sputtering in the step of forming the insulating layer. In the method for manufacturing a light emitting device according to any one of claims 1 to 5.
A method for manufacturing a light emitting device, wherein the insulating layer is made of an inorganic material. In the method for manufacturing a light emitting device according to any one of claims 1 to 6.
The conductive portion has a first end portion of the conductive portion in contact with the first electrode, and a second end portion of the conductive portion opposite the first end portion of the conductive portion,
The insulating layer has a first first end of said insulating layer in contact with the electrode portion, the second end opposite the insulating layer of the first end portion of the insulating layer, and
The first end portion of the insulating layer is outside the first end portion of the conductive portion.
A method for manufacturing a light emitting device, wherein the second end portion of the insulating layer is outside the second end portion of the conductive portion. In the method for manufacturing a light emitting device according to any one of claims 1 to 7.
In the cross-sectional view perpendicular to the extending direction of the first electrode, when the direction toward the center of the first electrode as viewed from the end of the first electrode is the inside and the direction away from the first electrode is the outside. the conductive portion, the first and end of the electrode from the inside of the first electrode across the spread over the outer, the method of manufacturing the light emitting device.

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