JP6988874B2 - Image sensor and image sensor - Google Patents

Description

The present invention relates to an image sensor and an image pickup device, for example, a solid-state image pickup device and an electronic camera.

Conventionally, the phase difference AF method is known as a technique for realizing high-speed AF (autofocus) with an electronic camera. The phase-difference AF method requires a dedicated focus detection pixel, and for example, there is known a technique of arranging a focus detection pixel in a part of an image pickup pixel of one image sensor (see, for example, Patent Document 1). Further, there is known a technique of using a dedicated focus detection image sensor arranged separately from the image image sensor (see, for example, Patent Document 2). On the other hand, a technique of stacking and arranging two photoelectric conversion elements is known (see, for example, Patent Document 3).

Japanese Unexamined Patent Publication No. 2007-282109 Japanese Unexamined Patent Publication No. 2007-011070 Japanese Unexamined Patent Publication No. 2009-130239

However, when the focus detection pixel is arranged in a part of the image pixel of the image sensor, there is a problem that false signals of vertical streaks and horizontal streaks are likely to occur, and advanced pixel interpolation processing is required. Further, when a dedicated focus detection image sensor is used, there is a problem that a complicated optical system for dividing the incident light into an image image sensor and a focus detection image sensor is required. Furthermore, the technique of stacking and arranging is specialized for image shooting, and focus detection and efficient color arrangement have not been considered.

An object of the present invention is to provide an image pickup device and an image pickup device (solid-state image pickup device and an electronic camera) suitable for focus detection without using advanced pixel interpolation processing or a complicated optical system.

Imaging device as one example of the present invention includes a first photoelectric conversion unit that generates an electric charge by photoelectric conversion of light, provided on one surface of the first photoelectric conversion unit, charges generated by the first photoelectric conversion unit A first electrode for outputting light, a second electrode and a third electrode provided on the other surface of the first photoelectric conversion unit and for outputting the electric charge generated by the first photoelectric conversion unit, and a first photoelectric conversion unit. It includes a conversion unit, a second photoelectric conversion unit that photoelectrically converts light transmitted through the first electrode, the second electrode, and the third electrode to generate electric charges.

An image pickup device as another example of the present invention includes the above-mentioned image pickup device.

The present invention can provide an image sensor and an image pickup device (solid-state image pickup device and electronic camera) suitable for focus detection without using advanced pixel interpolation processing or a complicated optical system.

It is a figure which shows the outline of a solid-state image sensor 101. It is a figure which shows an example of a pixel arrangement. It is a figure which shows the circuit example of the 1st image pickup element 102. It is a figure which shows the circuit example of the 2nd image pickup element 103. It is a figure which shows the circuit example of a pixel. It is a figure which shows an example of a timing chart. It is a figure which shows the relationship between a layout structure and a cross section. It is a figure which shows the cross section AB. It is a figure which shows the cross section CD. It is a figure which shows the layout composition. It is a figure which shows the arrangement example of the light receiving part of the 2nd image sensor 103. It is a figure which shows the modification 1 of the pixel arrangement. It is a figure which shows the modification 2 of the pixel arrangement. It is a figure which shows the structural example of the electronic camera 201.

Hereinafter, embodiments of the solid-state image sensor and the electronic camera according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a diagram showing an outline of the solid-state image sensor 101 according to the present embodiment. In FIG. 1, the solid-state image sensor 101 is arranged on the same optical path on the incident light side of the first image sensor 102 and the first image sensor 102, which perform photoelectric conversion by a photodiode in the same manner as a normal solid-state image sensor. It has two image pickup devices 103. The second image sensor 103 is composed of an organic photoelectric film that transmits specific light and photoelectrically converts non-transmitted light, and the specific light transmitted through the second image sensor 103 is received by the first image sensor 102. Here, the first image sensor 102 and the second image sensor 103 are formed on the same semiconductor substrate, and each pixel position has a one-to-one correspondence. For example, the pixels in the first row and first column of the first image sensor 102 correspond to the pixels in the first row and first column of the second image sensor 103.

FIG. 2A is a diagram showing an example of the pixel arrangement of the second image pickup device 103. In FIG. 2A, the horizontal direction is the x-axis, the vertical direction is the y-axis, and the coordinates of the pixel P are expressed as P (x, y). In the example of the second image sensor 103 of FIG. 2A, organic photoelectric films that photoelectrically convert Mg (magenta) and Ye (yellow) light are alternately arranged in each pixel in the odd-numbered rows, and each pixel in the even-numbered rows. Organic photoelectric films that photoelectrically convert Cy (cyan) and Mg (magenta) light are alternately arranged. Then, the light that is not received by each pixel is transmitted. For example, the pixels P (1,1) photoelectrically convert the light of Mg and transmit the light of the complementary color (G: green) of Mg. Similarly, the pixels P (2, 1) photoelectrically convert the light of Ye to transmit the light of the complementary color (B: blue) of Ye, and the pixels P (1, 2) photoelectrically convert the light of Cy to Cy. Light of the complementary color (R: red) of is transmitted. As will be described in detail later, each pixel of the second image sensor 103 is composed of a pair of focus detection pixels corresponding to the phase difference AF method.

FIG. 2B is a diagram showing an example of the pixel arrangement of the first image pickup device 102. The pixel positions in FIG. 2B are the same as those in FIG. 2A. For example, the pixels (1,1) of the second image sensor 103 correspond to the pixels (1,1) of the first image sensor 102. In FIG. 2B, the first image sensor 102 is not provided with a color filter or the like, and the specific light transmitted through the second image sensor 103 (light absorbed by the organic photoelectric film and converted to photoelectric) is obtained. Complementary color) is photoelectrically converted. Therefore, as shown in FIG. 2C, the first image sensor 102 causes G (green) and B (blue) color components for each pixel in the odd-numbered rows, and R (red) and G for each pixel in the even-numbered rows. An image of the (green) color component is obtained. For example, in the pixel P (1,1), an image of the complementary color G component of Mg of the second image sensor 103 can be obtained. Similarly, the pixel P (2, 1) obtains an image of the complementary color B component of Ye, and the pixel P (1, 2) obtains an image of the complementary color R component of Cy.

As described above, in the solid-state image sensor 101 according to the present embodiment, the second image sensor 103 composed of an organic photoelectric film serves as a conventional color filter, and the first image sensor 102 complements the color of the second image sensor 103. You can get an image. In the example of FIG. 2, an image of the Bayer array is obtained from the first image sensor 102. Although an example of the Bayer arrangement is shown in FIG. 2, the same can be achieved by arranging the pixels of the first image pickup element 102 and the second image pickup element 103 so as to have a complementary color relationship even if the arrangement is another. can.

In particular, in the solid-state image sensor 101 according to the present embodiment, since an organic photoelectric film is used instead of the color filter required in the conventional single-plate image sensor, the incident light absorbed by the color filter is the first. (Ii) It can be effectively used by the image sensor 103.

Further, in the solid-state image sensor 101 according to the present embodiment, the image pixels are arranged on the first image sensor 102, and the focus detection pixels are evenly arranged on the second image sensor 103, so that the image pixels are evenly arranged on the entire surface. There is no need to perform complicated pixel interpolation processing as in the prior art in which focus detection pixels are arranged in a part of the image sensor 103, and a focus detection signal is output from the second image sensor 103 and a color image signal is output from the first image sensor 102. Each can be obtained independently.

FIG. 3 is a diagram showing a circuit example of the first image sensor 102. In FIG. 3, the first image pickup element 102 has pixels P (x, y) arranged two-dimensionally, a vertical scanning circuit 151, a horizontal output circuit 152, and a current source PW. In the example of FIG. 3, for the sake of clarity, a configuration of 4 pixels in 2 rows and 2 columns is shown, but in reality, about 10 million pixels are arranged two-dimensionally.

In FIG. 3, the vertical scanning circuit 151 outputs a timing signal (φTx (y), φR (y), φSEL (y)) for reading a signal from each pixel. For example, the timing signals φTx (1), φR (1), and φSEL (1) are given to the pixels P (1,1) and P (2,1) in the first row. Then, signals are read from each pixel of the vertical signal lines VLINE (1) and VLINE (2) connected to the current sources PW (1) and PW (2) arranged in each row, and the horizontal output circuit 152. Temporarily retained. Then, the signals of each pixel temporarily held in the horizontal output circuit 152 for each row are sequentially output to the outside (output signal Vout). Although not drawn in FIG. 3, a correlated double sampling circuit (CDS) for eliminating signal variation between pixels when reading from each pixel to the horizontal output circuit 152 via the vertical signal line VLINE (x). Circuit) may be arranged.

FIG. 4 is a diagram showing a circuit example of the second image sensor 103. In FIG. 4, the second image pickup element 103 includes pixels P (x, y) arranged in a two-dimensional manner, a vertical scanning circuit 161, a horizontal output circuit 162, a horizontal output circuit 163, a current source PW_A, and the like. It has a current source PW_B. In the example of FIG. 4, similar to FIG. 3, it is composed of 4 pixels in 2 rows and 2 columns, but in reality, about 10 million pixels are arranged two-dimensionally. Further, each pixel P (x, y) in FIG. 4 corresponds to each pixel P (x, y) in FIG. In particular, the second image sensor 103 has a photoelectric conversion unit composed of two organic photoelectric films, a light receiving unit PC_A (x, y) and a light receiving unit PC_B (x, y), at one pixel position, and is of a phase difference AF method. A pair of pixels is configured.

In FIG. 4, the vertical scanning circuit 161 outputs a timing signal (φR_A (y), φR_B (y), φSEL_A (y), φSEL_B (y)) for reading a signal from each pixel. For example, the timing signals φR_A (1) and φSEL_A (1) are given to the light receiving units PC_A (1,1) and P_A (2,1) on the first line, and the light receiving units PC_B (1,1) and P_B (2,1) are given. ) Is given timing signals φR_B (1) and φSEL_B (1). The signals of the light receiving units PC_A (1,1) and P_A (2,1) are the vertical signal lines VLINE_A (1) connected to the current sources PW_A (1) and PW_A (2) arranged in each row, respectively. And VLINE_A (2) are read out and temporarily held in the horizontal output circuit_A162. The signals of each pixel temporarily held for each row in the horizontal output circuit_A162 are sequentially output to the outside (output signal Vout_A). Similarly, the signals of the light receiving units PC_B (1,1) and P_B (2,1) are the vertical signal lines VLINE_B (1) connected to the current sources PW_B (1) and PW_B (2) arranged in each row, respectively. ) And VLINE_B (2), and are temporarily held in the horizontal output circuit_B162. The signals of each pixel temporarily held for each row in the horizontal output circuit_B162 are sequentially output to the outside (output signal Vout_B).

Although the circuit examples of the first image sensor 102 and the second image sensor 103 have been described separately in FIGS. 3 and 4, they are actually formed on the same semiconductor substrate to form one solid-state image sensor 101. do.
[Circuit example of pixels of solid-state image sensor 101]
Next, a circuit example of the pixels of the solid-state image sensor 101 will be described. FIG. 5 is a diagram showing a circuit example of one pixel P (x, y) arranged two-dimensionally. In FIG. 5, the pixel P (x, y) includes a photodiode PD, a transfer transistor Tx, a reset transistor R, an output transistor SF, and a selection transistor SEL as circuits for forming the first image pickup element 102. Has. The photodiode PD accumulates electric charges according to the amount of incident light, and the transfer transistor Tx transfers the electric charges accumulated in the photodiode PD to the floating diffusion region (FD unit) on the output transistor SF side. The output transistor SF constitutes a current source PW and a source hollower via the selection transistor SEL, and outputs an electric signal corresponding to the electric charge accumulated in the FD unit to the vertical signal line VLINE as an output signal OUT. The reset transistor R resets the electric charge of the FD portion to the power supply voltage Vcc.

Further, as a circuit for forming the second image pickup element 103, it has a light receiving unit PC made of an organic photoelectric film, reset transistors R_A and R_B, output transistors SF_A and SF_B, and selection transistors SEL_A and SEL_B. As described with reference to FIG. 2A, the light receiving unit PC using the organic photoelectric film converts an electric signal according to the amount of non-transmitted light, and the current sources PW_A and PW_B and the source hollower respectively via the selection transistors SEL_A and SEL_B. Is output to the vertical signal lines VLINE_A and VLINE_B as output signals OUT_A and OUT_B via the output transistors SF_A and SF_B constituting the above, respectively. The reset transistors R_A and R_B reset the output signal of the light receiving unit PC to the reference voltage Vref. Further, a high voltage Vpc is given for the operation of the organic photoelectric film. Here, each transistor is composed of MOS_FET.

Here, the operation of the circuit of FIG. 5 will be described with reference to the timing chart of FIG. FIG. 6 is a diagram showing an example of the timing signal of FIG. FIG. 6A is a diagram showing the operation timing of the first image pickup device 102. First, the selection signal φSEL becomes “High” at the timing T1, and the selection transistor SEL is turned on. Next, at the timing T2, the reset signal φR becomes “High”, the FD unit resets to the power supply voltage Vcc, and the output signal OUT also becomes the reset level. Then, after the reset signal φR becomes “Low”, the transfer signal φTx becomes “High” at the timing T3, the charge accumulated in the photodiode PD is transferred to the FD unit, and the output signal OUT corresponds to the amount of charge. It begins to change and stabilizes. Then, the transfer signal φTx becomes “Low”, and the signal level of the output signal OUT read from the pixel to the vertical signal line VLINE is determined. Then, the output signal OUT of each pixel read out to the vertical signal line VLINE is temporarily held in the horizontal output circuit_152 line by line, and then output from the solid-state image sensor 101 as an output signal Vout. In this way, the signal is read out from each pixel of the first image sensor 102.

FIG. 6B is a diagram showing the operation timing of the second image pickup device 103. First, the selection signal φSEL_A (or φSEL_B) becomes “High” at the timing T11, and the selection transistor SEL_A (or SEL_B) is turned on. Next, at the timing T12, the reset signal φR_A (or φR_B) becomes “High”, and the output signal OUT_A (or φOUT_B) also becomes the reset level. Immediately after the reset signal φR_A (or φR_B) becomes “Low” at the timing T13, the charge accumulation of the light receiving unit PC by the organic photoelectric film is started, and the output signal OUT_A (or the output signal OUT_B) is generated according to the amount of charge. Change. Then, after being temporarily held row by row in the horizontal output circuit_A162 (or horizontal output circuit_B163), it is output from the solid-state image sensor 101 as an output signal Vout_A (or output signal Vout_B). In this way, the signal is read out from each pixel of the second image pickup device 103.

FIG. 7A is an example of the semiconductor layout of the solid-state image sensor 101. Note that FIG. 7A corresponds to the pixels P (2, 2) from the pixels P (1, 1) of FIGS. 2 and 4 described above.

7 (b) is a cross-sectional view when the pixels P (1, 1) and the pixels (2, 1) of FIG. 7 (a) are cut in the horizontal direction along the cutting lines AB. Further, FIG. 8B is a diagram drawn so that the pixel positions of the cutting lines AB can be easily understood, and the light receiving portion PC_A (1,1) and the light receiving portion P_A (2,1) in FIG. 4 are cut. do. 8 (a) is an enlarged view of FIG. 7 (b), and the pixels P (1, 1) at the same positions of the first image sensor 102 and the second image sensor 103 are the same microlens ML (1, 1). Receives the subject light incident from 1). Here, in FIG. 8A, the wiring layer 301 has a three-layer structure, but may have a two-layer structure. Then, the output signal of the second image pickup device 103 is taken out from the signal output end 302 via the wiring layer 301. Separation layers 303 and 304 are arranged on both sides of the signal output end 302. Further, the photodiodes PD (1,1) and PD (2,1) are arranged so as to be separated from the separation layers 303 and 304.

7 (c) is a cross-sectional view when the pixel P (2, 1) and the pixel (2, 2) of FIG. 7 (a) are cut in the vertical direction along the cutting line CD. Further, FIG. 9B is a diagram drawn so that the pixel positions of the cutting lines CD can be easily understood, and the light receiving portions PC_A (2,1), PC_B (2,1), and PC_A (2,2) in FIG. ) And the parts of PC_B (2, 2) are cut. 9 (a) is an enlarged view of FIG. 7 (c), and the pixels P (2, 1) and the pixels P (2, 2) at the same positions of the first image sensor 102 and the second image sensor 103 are The subject light incident from the same microlenses ML (2,1) and ML (2,2) is received, respectively. Here, the portion different from FIG. 8B is that the pixel P (2, 1) of the second image sensor 103 is divided into a light receiving unit PC_A (2, 1) and a light receiving unit PC_B (2, 1). The pixel P (2, 2) is divided into a light receiving unit PC_A (2, 2) and a light receiving unit PC_B (2, 2). Then, the light receiving unit PC_A (2,1) and the light receiving unit PC_B (2,1) can receive an image of the pupil position of the paired optical system, respectively, and can perform focus detection by the phase difference AF method. Similarly, the light receiving unit PC_A (2, 2) and the light receiving unit PC_B (2, 2) receive an image of the pupil position of the paired optical system, respectively. Since the phase difference AF method is a well-known technique, detailed description thereof will be omitted.

Here, in FIG. 9B, the wiring layer 301 of FIG. 8B has the wiring layer 301A and the wiring layer 301B, and the wiring layer 301A is the light receiving portion PC_A (2, 1) of the organic photoelectric film. The signal is output to the signal output terminal 305A, and the wiring layer 301B outputs the signal of the light receiving unit PC_B (2, 1) of the organic photoelectric film to the signal output end 305B. In the wiring layer 301 of FIG. 8B, since the wiring layer 301A and the wiring layer 301B overlap each other, only one is visible. Similarly, the signal of the light receiving unit PC_A (2, 2) of the organic photoelectric film of the pixel P (2, 2) is output to the signal output terminal 306A, and the signal of the light receiving unit PC_B (2, 2) is output to the signal output terminal 306B. It is output. A readout circuit such as an output transistor, a selection transistor, and a reset transistor is arranged in the readout circuit 307, and a signal of each pixel is output from the solid-state image pickup device 101 to the outside.

FIG. 10 is an enlarged view of the layout diagram of the pixel P (1,1) of FIG. 7A. In FIG. 10, in the circuit arranged around the photodiode PD, the part shown by the diagonal line is the gate electrode, and the white part on both sides of the gate electrode is an NMOS type transistor composed of n regions. In FIG. 10, the electric charge stored in the photodiode PD of the first image sensor 102 is transferred to the FD unit when the transfer signal φTx is applied to the gate electrode of the transfer transistor. The FD unit is connected to the gate electrode of the output transistor SF and converted into an electric signal, and when the selection signal φSEL is given to the gate electrode of the selection transistor SEL, it is read out to the vertical signal line VLINE. When the reset signal φR is given to the gate electrode of the reset transistor R, the electric charge of the FD portion is reset to the power supply voltage Vcc.

On the other hand, in FIG. 10, the electric signal output from the transparent electrode of the light receiving portion PC_A (1,1) of the organic photoelectric film is connected to the gate electrode of the output transistor SF_A, and the selection signal φSEL_A is connected to the gate electrode of the selection transistor SEL_A. If given, it is read out to the vertical signal line VLINE_A. Similarly, the electric signal output from the transparent electrode of the light receiving unit PC_B (1,1) is connected to the gate electrode of the output transistor SF_B, and when the selection signal φSEL_B is given to the gate electrode of the selection transistor SEL_B, the vertical signal line. Read to VLINE_B. When the reset signal φR_A (or φR_B) is given to the gate electrode of the reset transistor R_A (or R_B), the signal voltage of the light receiving unit PC_A (1,1) (or PC_B (1,1)) is set to the reference voltage Vref. Reset. In the organic photoelectric film, a high voltage Vpc for extracting an electric signal according to the amount of incident light is applied to the transparent electrode on the incident light side from the facing transparent electrodes.

As described above, the solid-state image sensor 101 according to the present embodiment includes a first image sensor 102 that performs photoelectric conversion by a conventional photodiode and a second image sensor 103 that performs photoelectric conversion by an organic photoelectric film. , The image signal can be acquired from the first image sensor 102, and the focus detection signal corresponding to the phase difference AF method can be acquired from the second image sensor 103.

As a result, the solid-state image sensor 101 does not need to arrange the focus detection pixel in a part of the image pixel as in the conventional case, and the deterioration of the image quality due to the false signal of the vertical streak and the horizontal streak and the advanced pixel interpolation processing are performed. It becomes unnecessary. Further, since the first image sensor 102 for images and the second image sensor 103 for focus detection are stacked and arranged so as to use the incident light of the same microlens, the incident light is used as the image pickup element for images as in the conventional case. It eliminates the need for a complicated optical system for dividing the image into a focus detection image sensor. In particular, the solid-state image sensor 101 according to the present embodiment constitutes a camera because it uses two image sensors, the first image sensor 102 and the second image sensor 103, and does not require an optical device such as a prism or a mirror. The arrangement and design of the optical system in the case is easy. Further, in a two-panel image pickup device using a prism, a mirror, or the like, it is essential to adjust the optical path lengths up to two image pickup elements, but the solid-state image pickup device 101 according to the present embodiment has only one optical path. , No adjustment required.

Further, the second image sensor 103 and the first image sensor 102 can detect color components having a complementary color relationship with each other, and the organic photoelectric film of the second image sensor 103 can also be used as a color filter of the first image sensor 102. , The incident light can be used efficiently without wasting it.

As described above, the solid-state image sensor 101 according to the present embodiment can realize a phase-difference AF method capable of high-speed operation without using advanced pixel interpolation processing or a complicated optical system.

In the above example, as shown in FIG. 11A, the light receiving units PC_A (x, y) and PC_B (x, y), which are pairs corresponding to the phase difference AF method, are each of the second image sensor 103. The pixels P (x, y) are arranged, but as another method, as shown in FIG. 11B, the light receiving unit PC_A (x, y) or the light receiving unit PC_B (x, y) is placed on only one side. It may be arranged in one pixel P (x, y). Alternatively, as shown in FIG. 11C, focus detection pixels in various directions such as a vertical direction, a horizontal direction, and an oblique direction may be mixed in the pupil division direction. In any case, the solid-state image sensor 101 according to the present embodiment captures the image signal by the first image sensor 102 and acquires the focus detection signal by the second image sensor 103, so that the captured image can be captured. Focus detection can be performed by high-speed phase-difference AF at any position on the shooting screen without affecting the image quality.

Here, as described in FIG. 2, the second image sensor 103 contains pixels corresponding to the three colors of Mg, Ye, and Cy, so that the focus detection signal obtained from the pixels of different color components can be obtained. It may be different. Therefore, when performing focus detection, focus detection may be performed by the phase difference AF method using a focus detection signal obtained from pixels having the same color component. For example, in the case of FIG. 2A, only the focus detection signal obtained from Mg pixels having a large number of pixels (odd-numbered column pixels in the case of odd-numbered rows and even-numbered column pixels in the case of even-numbered rows) is used. Alternatively, the error between the pixels corresponding to the three colors of Mg, Ye, and Cy may be measured in advance, and the error may be corrected when the phase difference AF process is performed.

Further, the output signal of the second image sensor 103 may be used not only for focus detection but also for white balance control.

(Modification 1)
FIG. 12 is a diagram showing a modification 1 of the color arrangement of the pixels described with reference to FIG. In the example of FIG. 2, the organic photoelectric film of the second image sensor 103 is made to correspond to the three colors of Mg, Ye, and Cy, and the image signal of the three colors of R, G, and B can be detected by the first image sensor 102. However, as shown in FIG. 12, the organic photoelectric film of the second image sensor 103 is made to correspond to the three colors of R, G, and B, and the first image sensor 102 is made to correspond to the three colors of Mg, Ye, and Cy. It may be possible to detect the image signal of. Even in this case, the color components to be photoelectrically converted by the first image sensor 102 and the second image sensor 103 are complementary colors to each other.

(Modification 2)
FIG. 13 is a diagram showing a modification 2 of the color arrangement of the pixels described with reference to FIG. In the example of FIG. 2, a light receiving unit that is a pair corresponding to the phase difference AF method is arranged in each pixel of the second image sensor 103, but in the modified example of FIG. 13, a part of the pixels of the second image sensor 103 is arranged. A pair of light receiving units corresponding to the phase difference AF method is arranged. As a result, the circuit scale of the solid-state image sensor 101 can be reduced.

(Example of electronic camera)
Next, an example of the electronic camera 201 equipped with the solid-state image sensor 101 is shown in FIG. In FIG. 14, the electronic camera 201 includes an optical system 202, a solid-state image sensor 101, an image buffer 203, an image processing unit 204, a control unit 205, a display unit 206, a memory 207, an operation unit 208, and the like. It is composed of a memory card IF209.

The optical system 202 forms a subject image on the solid-state image sensor 101. As described above, the solid-state image sensor 101 has a first image sensor 102 and a second image sensor 103, and an image signal captured by the first image sensor 102 is taken into the image buffer 203. The focus detection signal acquired by the second image sensor 103 is input to the control unit 205. The control unit 205 controls the entire electronic camera 201 according to the user's operation by the operation unit 208. For example, when the release button of the operation unit 208 is pressed halfway, the control unit 205 controls the focus position of the optical system 202 by performing focus detection by the phase difference AF method using the focus detection signal acquired from the second image sensor 103. .. Then, when the user fully presses the release button of the operation unit 208, the control unit 205 captures the image taken by the first image sensor 102 after the focus control and takes the image into the image buffer 203. Further, the image captured in the image buffer 203 is subjected to white balance processing, color interpolation processing, contour enhancement processing, gamma correction processing, etc. by the image processing unit 204, and is displayed on the display unit 206 or via the memory card IF209. Is saved in the memory card 209a.

As described above, by mounting the solid-state image sensor 101 according to the present embodiment on the electronic camera 201, the image processing unit 204 performs advanced pixel interpolation processing, and the optical system 202 divides the incident light. A phase difference AF method capable of high-speed operation can be realized without the need for a configuration.

Although the solid-state image sensor according to the present invention has been described by way of examples in each embodiment, it can be carried out in various other forms without departing from its spirit or its main characteristics. Therefore, the embodiments described above are merely exemplary in all respects and should not be construed in a limited way. The present invention is shown by the scope of claims, and the present invention is not bound by the text of the specification. Further, all modifications and modifications belonging to the equivalent scope of the claims are within the scope of the present invention.

101 ... Solid-state image sensor; 102 ... First image sensor; 103 ... Second image sensor; 151,161 ... Vertical scanning circuit; 152 ... Horizontal output circuit; 162 ... Horizontal output Circuit_A; 163 ... Horizontal output circuit_B; 201 ... Electronic camera; 202 ... Optical system; 203 ... Image buffer; 204 ... Image processing unit; 205 ... Control unit; 206. Display unit; 207 ... Memory; 208 ... Operation unit; 209 ... Memory card IF; 209a ... Memory card; P ... Pixel; PC_A, PC_B ... Light receiving unit; PD.・ ・ Photo diode; PW, PW_A, PW_B ... Current source; SEL, SEL_A, SEL_B ... Selected transistor; SF, SF_A, SF_B ... Output transistor; R, R_A, R_B ... Reset transistor; Tx ... Transfer transistor; φSEL, φSEL_A, φSEL_B ... Selection signal; φR, φR_A, φR_B ... Reset signal; φTx ... Transfer signal; ML ... Microlens; VLINE ... Vertical signal line

Claims (10)

A first photoelectric conversion unit for generating a charge of light photoelectrically converted,
The first electrode provided on one surface of the first photoelectric conversion unit and for outputting the electric charge generated by the first photoelectric conversion unit, and the other surface of the first photoelectric conversion unit are provided. A second electrode and a third electrode for outputting the electric charge generated by the first photoelectric conversion unit, and
A second photoelectric conversion unit that generates charges the light transmitted through the first photoelectric conversion portion and the first electrode and the second electrode and the third electrode by photoelectric conversion,
An image sensor comprising. In the image pickup device according to claim 1,
Before Stories second electrode and the third electrode, an imaging device for outputting a signal used for focus detection. In the image pickup device according to claim 1 or 2,
At least one of the first electrode and the second electrode is an image pickup device that outputs a signal used for image generation. The image pickup device according to any one of claims 1 to 3.
The first photoelectric conversion unit photoelectrically converts light of the first color into light.
The second photoelectric conversion unit is an image pickup device that photoelectrically converts light of a complementary color of the first color. In the image pickup device according to any one of claims 1 to 4.
The first photoelectric conversion unit photoelectrically converts magenta or yellow or cyan light.
The second photoelectric conversion unit is an image sensor that photoelectrically converts green, blue, or red light. In the image pickup device according to any one of claims 1 to 4.
The first photoelectric conversion unit photoelectrically converts green, blue, or red light.
The second photoelectric conversion unit is an image sensor that photoelectrically converts magenta or yellow or cyan light. In the image pickup device according to any one of claims 1 to 6.
A third photoelectric conversion unit that photoelectrically converts light of the second color to generate an electric charge,
It is provided on one surface of the third photoelectric conversion unit, the first electrode for outputting the charge generated by the third photoelectric conversion unit, and the other surface of the third photoelectric conversion unit. The fourth electrode and the fifth electrode for outputting the electric charge generated by the third photoelectric conversion unit, and
With the third photoelectric conversion unit , the first electrode, the fourth electrode, and the fourth photoelectric conversion unit that photoelectrically converts the complementary color light of the second color transmitted through the fourth electrode and the fifth electrode to generate an electric charge. An image pickup element comprising. In the image pickup device according to any one of claims 1 to 7.
The first photoelectric conversion unit is an image pickup device composed of an organic photoelectric film. The image pickup device according to any one of claims 1 to 8.
The second photoelectric conversion unit is an image pickup device provided on a silicon substrate. An image pickup apparatus comprising the image pickup device according to any one of claims 1 to 9.

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