JP6992154B2 - Liquid treatment equipment and liquid treatment method - Google Patents

Description

The disclosed embodiments relate to a liquid treatment apparatus and a liquid treatment method.

Conventionally, a liquid treatment apparatus for treating a semiconductor wafer (hereinafter, referred to as a wafer) as a substrate with various treatment liquids is known. In such a liquid treatment apparatus, the treatment efficiency can be improved by performing the liquid treatment while controlling the temperature of the wafer at a high temperature (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2017-11246

However, it has been difficult to efficiently and stably heat the wafer with the conventional liquid treatment apparatus.

One aspect of the embodiment is made in view of the above, and an object thereof is to provide a liquid treatment apparatus and a liquid treatment method capable of efficiently and stably heating a wafer to be liquid-treated. ..

The liquid processing apparatus according to one embodiment includes a heat generating member, a substrate holding unit, a processing liquid supply unit, and a coil. The heat generating member is arranged close to the substrate and has a heat insulating member. The substrate holding portion holds the substrate. The processing liquid supply unit supplies the treatment liquid onto the substrate held by the substrate holding unit. The coil heats the substrate by inducing heating the heat generating member.

According to one aspect of the embodiment, the liquid-treated wafer can be heated efficiently and stably.

FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment. FIG. 2 is a schematic diagram showing the configuration of the liquid treatment unit. FIG. 3 is a cross-sectional view showing the configuration of the substrate holding mechanism according to the embodiment. FIG. 4A is a cross-sectional view showing the configuration of the substrate holding mechanism according to the first modification of the embodiment. FIG. 4B is a top view showing the configuration of the coil according to the first modification of the embodiment. FIG. 5 is a cross-sectional view showing the configuration of the substrate holding mechanism according to the second modification of the embodiment. FIG. 6 is a cross-sectional view showing the configuration of the substrate holding mechanism according to the third modification of the embodiment. FIG. 7 is a cross-sectional view showing the configuration of the substrate holding mechanism according to the modified example 4 of the embodiment. FIG. 8A is a cross-sectional view showing the configuration of the substrate holding mechanism according to the modified example 5 of the embodiment. FIG. 8B is a block diagram showing a configuration of a wireless temperature sensor according to a modification 5 of the embodiment. FIG. 9 is a flowchart showing a processing procedure in the liquid treatment according to the embodiment.

Hereinafter, embodiments of the liquid treatment apparatus and the liquid treatment method disclosed in the present application will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments shown below.

<Overview of board processing system>
First, a schematic configuration of the substrate processing system 1 according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

As shown in FIG. 1, the board processing system 1 includes an loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

The loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12. A plurality of substrates, in the embodiment, a plurality of carriers C for accommodating a semiconductor wafer W (hereinafter, referred to as a wafer W) in a horizontal state are mounted on the carrier mounting portion 11.

The transport section 12 is provided adjacent to the carrier mounting section 11, and includes a substrate transport device 13 and a delivery section 14 inside. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. conduct.

The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of liquid processing units 16. The plurality of liquid treatment units 16 are provided side by side on both sides of the transport unit 15.

The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and the wafer W can be moved between the delivery unit 14 and the liquid processing unit 16 by using the wafer holding mechanism. Perform transportation.

The liquid treatment unit 16 performs predetermined liquid treatment on the wafer W conveyed by the substrate transfer device 17. The details of the liquid treatment unit 16 will be described later.

Further, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the board processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

The program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 19 of the control device 4. Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C mounted on the carrier mounting portion 11 and receives the taken out wafer W. Placed on Watanabe 14. The wafer W placed on the delivery section 14 is taken out from the delivery section 14 by the substrate transfer device 17 of the processing station 3 and carried into the liquid processing unit 16.

The wafer W carried into the liquid treatment unit 16 is processed by the liquid treatment unit 16 and then carried out from the liquid treatment unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed wafer W mounted on the delivery section 14 is returned to the carrier C of the carrier mounting section 11 by the substrate transfer device 13.

<Overview of liquid treatment unit>
Next, the outline of the liquid treatment unit 16 will be described with reference to FIG. FIG. 2 is a schematic diagram showing the configuration of the liquid treatment unit 16. As shown in FIG. 2, the liquid treatment unit 16 includes a treatment chamber 20, a substrate holding mechanism 30, a treatment liquid supply unit 40, and a recovery cup 50.

The processing chamber 20 accommodates the substrate holding mechanism 30, the processing liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the processing chamber 20. The FFU 21 forms a downflow of the clean gas supplied into the processing chamber 20. The FFU 21 is not essential, and the processing chamber 20 does not have to be provided with the FFU 21.

The substrate holding mechanism 30 includes a substrate holding portion 31, a coil 32, a shielding member 33, a shaft 34, and a driving portion 35. The substrate holding portion 31 holds the wafer W horizontally. The coil 32 is arranged close to the substrate holding portion 31. The shielding member 33 is arranged on the side opposite to the substrate holding portion 31 with respect to the coil 32. Details of the substrate holding portion 31, the coil 32, and the shielding member 33 will be described later.

The shaft 34 is a member extending in the vertical direction, and the base end portion is rotatably supported by the drive portion 35, and the substrate holding portion 31 is horizontally supported at the tip end portion. The drive unit 35 rotates the shaft 34 around a vertical axis.

The substrate holding mechanism 30 rotates the substrate holding portion 31 supported by the shaft 34 by rotating the shaft 34 using the drive portion 35, thereby rotating the wafer W held by the substrate holding portion 31. ..

The processing liquid supply unit 40 supplies the processing fluid to the wafer W held by the substrate holding unit 31. The processing liquid supply unit 40 includes a nozzle 41a, an arm 42 that horizontally supports the nozzle 41a, and a swivel elevating mechanism 43 that swivels and elevates the arm 42.

The nozzle 41a is connected to the processing liquid supply source 46a via the valve 44a and the flow rate regulator 45a. A predetermined processing liquid for processing the wafer W is stored in the processing liquid supply source 46a. Although FIG. 2 shows an example in which one set of nozzles, treatment liquid supply sources, etc. is provided in the treatment liquid supply unit 40, a plurality of sets of nozzles, treatment liquid supply sources, etc. may be provided in the treatment liquid supply unit 40. ..

The recovery cup 50 is arranged so as to surround the substrate holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the substrate holding portion 31. A drainage port 51 is formed at the bottom of the recovery cup 50, and the treatment liquid collected by the recovery cup 50 is discharged to the outside of the liquid treatment unit 16 from the drainage port 51. Further, an exhaust port 52 for exhausting the clean gas supplied from the FFU 21 to the outside of the liquid treatment unit 16 is formed at the bottom of the recovery cup 50.

<Structure of board holding mechanism>
Next, a specific configuration of the substrate holding mechanism 30 will be described with reference to FIG. FIG. 3 is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the embodiment.

The substrate holding portion 31 has a substantially disk shape, and a suction port (not shown) for sucking the wafer W is provided on the upper surface of the substrate holding portion 31. Then, the substrate holding portion 31 can hold the wafer W on the upper surface of the substrate holding portion 31 by suction from the suction port.

The substrate holding portion 31 has a heat generating member 31a and a heat insulating member 31b inside. The heat generating member 31a has a substantially disk shape having a diameter slightly smaller than the upper surface of the substrate holding portion 31, and is composed of a member that is induced and heated by the magnetic flux radiated from the coil 32. The heat generating member 31a is, for example, graphite. The heat generating member 31a may be made of other than graphite.

The heat insulating member 31b has a substantially disk shape having a diameter substantially equal to that of the heat generating member 31a, and is made of a material having a low thermal conductivity. The heat insulating member 31b is, for example, a synthetic resin or ceramics. The heat insulating member 31b may be made of a material other than synthetic resin or ceramics.

By providing the heat generating member 31a and the heat insulating member 31b in the substrate holding portion 31 in this way, the heat generated in the heat generating member 31a due to the magnetic flux radiated from the coil 32 escapes to a place other than the wafer W. Can be suppressed. Therefore, according to the embodiment, the liquid-treated wafer W can be heated efficiently and stably.

In the embodiment, the heat insulating member 31b may be arranged on the side opposite to the wafer W with respect to the heat generating member 31a. For example, when the wafer W is held on the upper surface of the substrate holding portion 31, the heat generating member 31a may be arranged on the upper side of the substrate holding portion 31, and the heat insulating member 31b may be arranged on the lower side of the substrate holding portion 31.

As a result, it is possible to prevent heat from escaping to the side (that is, the lower side) of the heat generating member 31a opposite to the wafer W. Therefore, according to the embodiment, the liquid-treated wafer W can be heated more efficiently.

Further, in the embodiment, the wafer W may be held so that the substrate holding portion 31 is in direct contact with the wafer W. As a result, the heat generated by the heat generating member 31a of the substrate holding portion 31 can be directly transferred to the wafer W without using air or the like. Therefore, according to the embodiment, the liquid-treated wafer W can be heated more efficiently.

In the embodiment, an example in which the substrate holding portion 31 holds the wafer W so as to be in direct contact with the wafer W is shown, but it is not always necessary to hold the wafer W so as to be in direct contact with the wafer W. For example, the substrate holding portion 31 may hold the wafer W so as to be close to the upper surface of the substrate holding portion 31 (for example, a gap of 0.5 mm or less) so that heat can be transferred even through air or the like.

Further, in the embodiment, it is preferable that the surface of the substrate holding portion 31 is coated with a corrosion resistant coating. This makes it possible to prevent the heat generating member 31a and the heat insulating member 31b in the substrate holding portion 31 from corroding when the wafer W is treated with a corrosive treatment liquid.

The description of other parts of the substrate holding mechanism 30 will be continued. The coil 32 is arranged close to the substrate holding portion 31. For example, the coil 32 is arranged close to the lower side of the substrate holding portion 31. Since the coil 32 is supported by a support portion (not shown) of the substrate holding mechanism 30, the coil 32 does not rotate together with the substrate holding portion 31.

Then, the coil 32 radiates a magnetic flux to the heat generating member 31a of the adjacent substrate holding portion 31. Thereby, in the embodiment, the heat generating member 31a of the substrate holding portion 31 that rotates with the wafer W can be induced and heated.

It is preferable that the winding shaft of the coil 32 faces the heat generating member 31a. For example, in the embodiment, it is preferable that the winding shaft of the coil 32 faces in the vertical direction. As a result, the coil 32 can efficiently radiate the magnetic flux to the heat generating member 31a. Further, a magnetic flux cutoff may be inserted between the coils 32.

The coil 32 may be composed of one coil whose winding shaft faces the heat generating member 31a, or may be configured by arranging a plurality of coils whose winding shaft faces the heat generating member 31a. The coil 32 may have any configuration as long as it can radiate a magnetic flux to the entire heat generating member 31a.

The shielding member 33 shields the magnetic flux radiated from the coil 32. The shielding member 33 is arranged around the coil 32 at a position other than between the substrate holding portion 31 and the coil 32. For example, the shielding member 33 is arranged below the coil 32 (that is, on the other side of the winding shaft in the coil 32).

As a result, it is possible to prevent the magnetic flux radiated from the coil 32 from interfering with other devices in the liquid processing unit 16. Therefore, according to the embodiment, the liquid-treated wafer W can be heated more stably. The shielding member 33 may rotate together with the substrate holding portion 31, or may not rotate together with the substrate holding portion 31.

<Modification example>
Next, various modifications in the above-described embodiment will be described. FIG. 4A is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the modified example 1 of the embodiment, and FIG. 4B is a top view showing the configuration of the coil 32 according to the modified example 1 of the embodiment.

As shown in FIGS. 4A and 4B, the coil 32 of the first modification has a plurality of coils 32a to 32d. The coils 32a to 32d each have a pair of electrodes 32a1 to 32d1, and the pair of electrodes 32a1 to 32d1 can individually supply electric power to the plurality of coils 32a to 32d.

Then, in the embodiment, a plurality of portions of the wafer W can be individually heated by individually supplying electric power to the plurality of coils 32a to 32d. Therefore, according to the first modification, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W. Here, the "processing capacity" refers to the force of action of the processing liquid on the wafer W itself or the film formed on the wafer W in processing the wafer W. For example, the etching rate, detergency, growth rate of the plating film, etc. are included in this processing capacity. Further, depending on the processing content of the wafer W, for example, the temperature may be set differently at each portion in the wafer W surface, and the etching rate may be controlled to be different in the wafer W surface.

As shown in FIGS. 4A and 4B, in the first modification, the coils 32a to 32d are arranged along the circumferential direction of the wafer W at positions facing the wafer W, respectively, and the coils 32a to 32d are arranged along the radial direction of the wafer W. It is good that they are arranged side by side. That is, in the first modification, the coils 32a to 32d may be arranged in an arc shape on concentric circles having different diameters.

Further, in the first modification, in each of the coils 32a to 32d arranged in an arc shape, the winding shafts are arranged side by side along the arcuate region in which a plurality of coils facing the heat generating member 31a are applied. good.

Here, in the liquid processing performed while rotating the wafer W, the processing capacity of the processing liquid often differs depending on the circumferential direction of the wafer W, but by arranging the coils 32a to 32d as described above, the circumferential direction is obtained. The processing capacities of different processing liquids can be made uniform in the plane of the wafer W.

FIG. 5 is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the second modification of the embodiment. As shown in FIG. 5, in the second modification, the heat generating member 31a is divided and arranged. For example, the heat generating member 31a of the second modification is a heat generating member 31a1, 31a2, 31a3 arranged in an arc shape on concentric circles having different diameters, and a disk-shaped heat generating member 31a4 arranged on the central side. It is composed.

In this way, by dividing the heat generating member 31a so that the heat storage state of each heat generating member 31a is different, it is possible to heat a plurality of portions of the wafer W at individual temperatures. Therefore, according to the second modification, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W.

FIG. 6 is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the third modification of the embodiment. As shown in FIG. 6, in the modified example 3, the heat generating member 31a is provided at a position corresponding to only a part of the wafer W. For example, in the third modification, the heat generating member 31a is provided at a position corresponding only to the outer peripheral portion of the wafer W.

In this way, by providing the heat generating member 31a at a position corresponding to only a part of the wafer W, the portion of the wafer W corresponding to the heat generating member 31a can be selectively heated. Therefore, according to the modification 3, when the processing capacity of the processing liquid is different in a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W.

Although the modification 3 shows an example in which the heat generating member 31a is provided only at the position corresponding to the outer peripheral portion of the wafer W, the portion where the heat generating member 31a is provided is not limited to the position corresponding to the outer peripheral portion of the wafer W. The heat generating member 31a may be arranged at a position corresponding to the portion of the wafer W having a low processing capacity of the processing liquid.

FIG. 7 is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the modified example 4 of the embodiment. As shown in FIG. 7, in the modified example 4, the thickness of the heat generating member 31a differs depending on the portion. For example, in the modified example 4, the outer peripheral portion of the heat generating member 31a is thicker than the other portions.

By making the thickness of the heat generating member 31a different in this way, the wafer W can be heated while further raising the temperature (heat storage) of the heat generating member 31a in the thick portion. Therefore, according to the modification 4, when the processing capacity of the processing liquid is different in a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W.

In the fourth modification, an example in which the outer peripheral portion of the heat generating member 31a is made thicker than the other portions is shown, but the thickened portion is not limited to the outer peripheral portion of the heat generating member 31a, and the processing capacity of the wafer W is low. The heat generating member 31a close to the portion may be thickened.

FIG. 8A is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the modified example 5 of the embodiment. As shown in FIG. 8A, in the modified example 5, the wireless temperature sensor 36 is provided on the substrate holding portion 31. The wireless temperature sensor 36 has a function of wirelessly transmitting temperature information in the substrate holding portion 31, and is provided, for example, in a plurality of heat generating members 31a of the substrate holding portion 31.

FIG. 8B is a block diagram showing the configuration of the wireless temperature sensor 36 according to the modified example 5 of the embodiment. As shown in FIG. 8B, the wireless temperature sensor 36 includes a power receiving coil 36a, a rectifying unit 36b, a battery 36c, a temperature sensor 36d, and a transmitting unit 36e.

The power receiving coil 36a receives the magnetic flux radiated from the coil 32, converts the magnetic flux into AC power, and sends the converted AC power to the rectifying unit 36b. The rectifying unit 36b converts the AC power sent from the power receiving coil 36a into a predetermined DC power, and sends the DC power to the battery 36c. The battery 36c stores the DC power sent from the rectifying unit 36b. In addition, regardless of the electromagnetic induction wireless charging, another wireless method such as a magnetic resonance method or a radio wave propagation method may be used.

The rectifying unit 36b, the temperature sensor 36d, and the transmitting unit 36e operate with the electric power stored in the battery 36c. The temperature sensor 36d is, for example, a sensor on which a thermocouple is mounted, and detects the temperature inside the substrate holding portion 31. Then, the temperature sensor 36d sends the detected temperature information to the transmission unit 36e. The transmission unit 36e transmits the temperature information transmitted from the temperature sensor 36d to the outside.

As a result, the temperature of the substrate holding portion 31 on which the wireless temperature sensor 36 is mounted can be monitored. That is, in the modified example 5, the liquid treatment can be performed while estimating the temperature of the wafer W based on the temperature information of the substrate holding portion 31 to be monitored.

Therefore, according to the modification 5, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be further made uniform in the plane of the wafer W.

<Details of liquid treatment>
Subsequently, the details of the liquid treatment according to the embodiment will be described with reference to FIG. 9. FIG. 9 is a flowchart showing a processing procedure in the liquid treatment according to the embodiment.

First, the wafer W is transferred from the carrier C to the inside of the liquid processing unit 16 via the substrate transfer device 13, the delivery unit 14, and the substrate transfer device 17, and the substrate holding unit 31 of the liquid processing unit 16 transfers the wafer W to the inside. Holds the wafer W.

Subsequently, the control unit 18 controls the liquid processing unit 16 to supply the processing liquid to the wafer W held by the substrate holding unit 31 (step S101). The process of supplying such a treatment liquid is performed, for example, by operating the treatment liquid supply unit 40 and discharging a predetermined treatment liquid stored in the treatment liquid supply source 46a onto the wafer W via the nozzle 41a. ..

Subsequently, the control unit 18 controls the liquid treatment unit 16 to induce and heat the heat generating member 31a having the heat insulating member 31b by the coil 32 to heat the wafer W (step S102). The step of heating the wafer W is performed, for example, by supplying electric power to the coil 32.

Then, the step of heating the wafer W changes the processing capacity of the processing liquid supplied to the wafer W. When the heating process is completed, the liquid process for the wafer W according to the embodiment is completed.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the first modification and the second modification, an example in which four coils are provided is shown, but the number of coils may be two, three, or five or more.

Further, in the embodiment, the case where the substrate holding portion 31 vacuum-chucks the wafer W is shown, but the substrate holding portion 31 is not limited to the case where the wafer W is vacuum-chucked, and the wafer W may be electrostatically chucked, for example. ..

The liquid processing apparatus according to the embodiment includes a heat generating member 31a, a substrate holding unit 31, a processing liquid supply unit 40, and a coil 32. The heat generating member 31a is arranged close to the substrate (wafer W) and has a heat insulating member 31b. The substrate holding portion 31 holds the substrate (wafer W). The processing liquid supply unit 40 supplies the processing liquid onto the substrate (wafer W) held by the substrate holding unit 31. The coil 32 heats the substrate (wafer W) by inducing heating the heat generating member 31a. As a result, the liquid-treated wafer W can be heated efficiently and stably.

Further, in the liquid treatment apparatus according to the embodiment, the heat insulating member 31b is arranged on the side opposite to the substrate (wafer W) with respect to the heat generating member 31a. As a result, the liquid-treated wafer W can be heated more efficiently.

Further, in the liquid treatment apparatus according to the second modification, the heat generating member 31a is divided and arranged. As a result, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W.

Further, in the liquid treatment apparatus according to the third modification, the heat generating member 31a is provided at a position corresponding to only a part of the wafer W. As a result, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W.

Further, in the liquid treatment apparatus according to Modifications 1 and 2, a plurality of coils 32a to 32d are provided, and the plurality of coils 32a to 32d can individually heat a plurality of parts of the substrate (wafer W). As a result, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be made uniform in the plane of the wafer W. It is also possible to change the in-plane etching amount by intentionally changing the processing capacity.

Further, in the liquid treatment apparatus according to Modifications 1 and 2, the coils 32a to 32d are arranged at positions facing the substrate (wafer W) along the circumferential direction of the substrate (wafer W), and the plurality of coils 32a to 32d are arranged. , Arranged side by side along the radial direction of the substrate (wafer W). As a result, the processing capacities of the processing liquids that differ in the circumferential direction can be made uniform in the plane of the wafer W. It is also possible to change the in-plane etching amount by intentionally changing the processing capacity.

Further, the liquid treatment device according to the embodiment further includes a shielding member 33 that shields the magnetic flux leaking from the coil 32 to a portion other than the heat generating member 31a. As a result, the liquid-treated wafer W can be heated more stably.

Further, in the liquid processing apparatus according to the modification 5, the substrate holding unit 31 operates by the electric power converted from the magnetic flux radiated from the coil 32 to detect the temperature, and wirelessly transmits the detected temperature information. A sensor 36 is provided. As a result, when the processing capacity of the processing liquid is different at a plurality of portions of the wafer W, the processing capacity of the processing liquid can be further made uniform in the plane of the wafer W. It is also possible to change the in-plane etching amount by intentionally changing the processing capacity.

Further, in the liquid processing apparatus according to the embodiment, the substrate holding unit 31 holds the substrate (wafer W) so as to be in direct contact with the substrate (wafer W). As a result, the liquid-treated wafer W can be heated more efficiently.

Further, in the liquid treatment method according to the embodiment, a step (step S101) of supplying the treatment liquid to the substrate (wafer W) held by the substrate holding portion 31 and a heat generating member 31a having the heat insulating member 31b are guided by the coil 32. The step (step S102) of heating the substrate (wafer W) by heating is included. Then, the heating step (step S102) changes the processing capacity of the processing liquid supplied to the substrate (wafer W). As a result, liquid treatment can be performed on the wafer W that has been heated efficiently and stably.

In the above embodiment, the substrate holding portion 31 holds the back surface of the wafer W, but it is not always necessary to hold the back surface of the wafer W, and the end of the wafer W may be held. In that case, the substrate holding portion 31, the heat generating member 31a, and the heat insulating member 31b may be separate bodies. It suffices if the heat generating member 31a and the heat insulating member 31b are integrated.

Further, in the above embodiment, an example in which the substrate holding portion 31 rotates during the liquid treatment has been described, but it is not always necessary to rotate the wafer W during the liquid treatment, and heating is performed with the wafer W stationary. You may go.

Further effects and variations can be easily derived by those skilled in the art. For this reason, the broader aspects of the invention are not limited to the particular details and representative embodiments described and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the overall concept of the invention as defined by the appended claims and their equivalents.

W Wafer 1 Board processing system 16 Liquid processing unit 18 Control unit 30 Board holding mechanism 31 Board holding part 31a Heat generation member 31b Insulation member 32, 32a to 32d Coil 33 Shielding member 36 Wireless temperature sensor 40 Processing liquid supply unit

Claims (10)

A heat-generating member that is placed close to the substrate and has a heat insulating member,
A substrate holding portion that holds the substrate and
A processing liquid supply unit that supplies the processing liquid onto the substrate held by the substrate holding unit, and a processing liquid supply unit.
A coil that heats the substrate by inducing heating the heat-generating member, and a coil that heats the substrate.
Equipped with
The substrate holding portion has a temperature sensor that operates by electric power converted from the magnetic flux radiated from the coil to detect the temperature.
Liquid treatment equipment. The liquid treatment device according to claim 1, wherein the heat insulating member is arranged on the side opposite to the substrate with respect to the heat generating member. The liquid treatment device according to claim 1 or 2, wherein the heat generating member is separately arranged. The liquid treatment apparatus according to any one of claims 1 to 3, wherein the heat generating member is provided at a position corresponding to only a part of the substrate. A plurality of the coils are provided, and the coil is provided.
The liquid treatment apparatus according to any one of claims 1 to 4, wherein the plurality of coils can individually heat a plurality of parts of the substrate. The coil is arranged at a position facing the substrate along the circumferential direction of the substrate.
The liquid treatment apparatus according to claim 5, wherein the plurality of coils are arranged side by side along the radial direction of the substrate. The liquid treatment apparatus according to any one of claims 1 to 6, further comprising a shielding member that shields a magnetic flux leaking from the coil to a portion other than the heat generating member. The liquid treatment device according to any one of claims 1 to 7, wherein the temperature sensor is a wireless temperature sensor that wirelessly transmits detected temperature information. The liquid treatment apparatus according to any one of claims 1 to 8, wherein the substrate holding portion holds the substrate so as to be in direct contact with the substrate. The process of supplying the processing liquid to the substrate held in the substrate holding portion, and
A step of inducing and heating a heat generating member having a heat insulating member by a coil to heat the substrate, and a step of heating the substrate.
The process of detecting the temperature with a temperature sensor operated by the electric power converted from the magnetic flux radiated from the coil in the substrate holding portion, and
Including
The heating step is a liquid treatment method for changing the treatment capacity of the treatment liquid supplied to the substrate.

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