JP7007219B2 - Inspection equipment and inspection method for semiconductor devices - Google Patents

Description

The present invention relates to a semiconductor device inspection device and an inspection method, and more particularly to a semiconductor device inspection device and an inspection method for inspecting the electrical characteristics of a semiconductor device having electrodes on both sides of a wafer substrate in the wafer state. ..

Power semiconductor devices such as power transistors, power MOSFETs, and IGBTs (Insulated Gate Bipolar Transistors), and semiconductor devices such as LEDs and semiconductor lasers are configured so that current flows above and below the chip, and both sides of the wafer substrate. Some have electrodes. Therefore, in order to inspect the electrical characteristics of such a semiconductor device in the wafer state, it is necessary to bring the measuring probe into contact with both the front and back surfaces of the wafer, and the measurement is performed on the back surface directly under the semiconductor device to be inspected. Various inspection devices have been proposed for contacting the probe.

For example, in Patent Document 1, a large number of probes are arranged in a chuck stage that holds a wafer, and among these, a probe located directly below the back surface of the device to be measured is selectively connected to a tester to connect the wafer. An inspection device for measuring the electrical characteristics of a semiconductor device having electrodes on both sides of a substrate is disclosed.

However, in the inspection apparatus disclosed in Patent Document 1, it is necessary to move the chuck stage with respect to the probe arranged on the upper part in order to sequentially inspect all the semiconductor devices formed on the wafer. , The length of the cable connecting the probe and the tester arranged in the chuck stage tends to be inevitably long. As the length of the cable connecting the probe and the tester increases, the parasitic inductance of the measurement path composed of the cable increases, which is necessary for large current measurement and dynamic property testing that are close to the actual value of the semiconductor device to be inspected. There is a drawback that transient characteristics cannot be obtained. Therefore, even if the semiconductor device has passed the inspection in the wafer state, a characteristic defect may be found in the final full-spec inspection performed after the bonding, molding, burn-in process, etc., and the wafer may be found. Various processes performed after the inspection in the state are wasted, which causes inconveniences such as an increase in product cost and an increase in the amount of waste.

On the other hand, in Patent Documents 2 and 3, the semiconductor device is placed on a base having a conductivity larger than that of the semiconductor device, and the probe for the front electrode is brought into contact with the surface of the semiconductor device, and at the same time, it is used for the back electrode. An inspection device is disclosed in which a probe is brought into contact with an exposed portion of the base on which the semiconductor device is not mounted. However, the inspection devices disclosed in Patent Documents 2 and 3 inspect the semiconductor devices that exist individually, and do not inspect the semiconductor devices in the wafer state, but have electrodes on both the front and back surfaces. It does not give any suggestion as to how to accurately measure the characteristics of the semiconductor device in the wafer state.

In view of the above situation, in Patent Document 4, as a device for inspecting a semiconductor device in a wafer state, a wafer holding portion for holding a wafer to be inspected on the upper surface of a chuck stage and a wafer holding portion are used. A probe contact area having almost the same size as the portion is arranged, the wafer holding portion and the probe contact region are electrically conducted, and the front electrode probe and the back surface electrode probe are placed horizontally above the chuck stage. We proposed an inspection device for semiconductor devices that are arranged at a certain distance.

According to such an inspection device for a semiconductor device, even when the chuck stage is moved and the probe for the front electrode moves relatively in the wafer to be inspected, the probe for the back electrode is the probe for the front electrode and the probe for the front electrode. Since it is possible to move relatively within the probe contact region while maintaining a constant distance, the length of the electrical connection path between the tester and the probe for the front electrode and the probe for the back electrode is always the shortest length that is constant. It is possible to maintain this, and it is possible to minimize the parasitic inductance generated in the measurement path and obtain the transient characteristics required for large current measurement and dynamic characteristic test close to the actual value of the semiconductor device, which is an extremely excellent advantage. Is obtained.

Japanese Unexamined Patent Publication No. 5-333098 Japanese Unexamined Patent Publication No. 2007-40926 Japanese Unexamined Patent Publication No. 2008-101944 Japanese Unexamined Patent Publication No. 2013-118320

As described above, the semiconductor device inspection apparatus previously proposed by the applicant in Patent Document 4 has extremely excellent advantages, and the wafer holding portion on the chuck stage and the probe contact region are arranged side by side in close proximity to each other. By arranging the probe, the length of the electrical connection path between the probe for the front electrode and the probe for the back electrode is set to the shortest. However, when there are multiple sizes of the wafer diameter assumed to be measured, the size of the wafer holding portion and the probe contact area is set according to the maximum diameter wafer, so that the size of the wafer holding portion and the probe contact area is set according to the maximum diameter wafer. Even when measuring a wafer having a small diameter, the length of the electrical connection path between the probe for the front electrode and the probe for the back electrode is the same, and the parasitic inductance does not change. If we try to avoid such a situation and make the length of the electrical connection path the shortest according to the size of the wafer to be inspected, the inspection equipment designed for each size of the wafer to be inspected. There is a problem that it is necessary to prepare and it is expensive.

The present invention has been made to further improve the usability of the semiconductor device inspection apparatus previously proposed by the applicant in Patent Document 4, and is a tester even when the diameter (size) of the wafer to be inspected changes. A semiconductor device inspection device that can minimize the parasitic inductance generated in the measurement path while always maintaining the length of the electrical connection path between the probe for the front electrode and the probe for the back electrode at a constant shortest length. It is an object of the present invention to provide an inspection method using the same.

As a result of diligent research to solve the above problems, the present inventors have compared the size of the wafer holding portion set on the chuck stage in the semiconductor device inspection apparatus disclosed in Patent Document 4. When a wafer with a relatively small diameter is targeted for inspection, it is difficult to reduce the parasitic inductance by shortening the electrical connection path accordingly. It was speculated that the cause was that the size and position of the probe contact area were fixed.

That is, FIG. 18 is a plan view showing only the chuck stage and its peripheral portion in the semiconductor device inspection apparatus disclosed in Patent Document 4, and FIG. 19 shows the relationship between the front electrode probe and the back electrode probe and the chuck stage. As shown in FIGS. 18 and 19, the wafer holding portion α and the probe contact region β are set at a fixed position on the upper surface of the chuck stage 102 with a constant size, and are surface electrodes. The distance D between the contact portion of the probe PA for the probe PA and the contact portion of the probe PB for the back surface electrode is set in accordance with the positional relationship between the wafer holding portion α and the probe contact region β. It is set to be substantially the same as the distance L between the centers.

Therefore, when the size of the wafer W to be inspected, that is, the diameter is large and the size is substantially the same as the wafer holding portion α, as shown in FIG. 20, the contact portion and the back surface of the front electrode probe PA The distance D of the electrode probe PB from the contact portion is the minimum length allowed in the inspection device of this semiconductor device, but as shown in FIG. 21, for example, the diameter of the wafer W to be inspected is small. Even so, the distance D between the contact portion of the front electrode probe PA and the contact portion of the back surface electrode probe PB does not change, so that a parasitic inductance determined by the maximum assumed wafer size diameter may occur. It is thought that there is no such thing.

As a result of further research efforts based on such findings, the present inventors do not fixedly set the wafer holding portion and the probe contact region on the chuck stage, but the wafer functions as a wafer holding portion. A chuck plate and a contact plate that functions as a probe contact area are created, and multiple sets of these are prepared according to the wafer size to be inspected, and a mechanism that changes the position on the chuck stage and holds them detachably. By doing so, it has been found that the parasitic inductance generated in the measurement path can always be minimized even when the wafer diameter to be inspected changes.

That is, the present invention inspects a semiconductor device having a probe for a front electrode and a probe for a back electrode, a chuck stage that is relatively movable with respect to both probes, and a tester electrically connected to both probes. It ’s a device,
(1) The chuck stage is
(1-1) The first wafer chuck plate in which the wafer to be inspected is held on the upper surface thereof and the first contact plate in which the probe for the back surface electrode contacts the upper surface thereof are on the chuck stage and both plates are heavy. The first means of holding the plate, which is detachably held in the first position where it does not become
(1-2) A second wafer chuck plate having a diameter smaller than that of the first wafer chuck plate and a second contact plate having a diameter smaller than that of the first contact plate are placed on the chuck stage so that both plates do not overlap. Equipped with a plate holding second means to hold the plate detachably at two positions,
(1-3) WPc ₁ and CPc ₁ center on the upper surfaces of the first wafer chuck plate and the first contact plate when the first position and the second position are held in the first position, respectively. When the centers of the upper surfaces of the second wafer chuck plate and the second contact plate when held in the second position are WPc ₂ and CPc ₂ , respectively, WPc ₂ and CPc ₂ make WPc ₁ and CPc ₁ It is on a connecting line segment and is selected so that the distance between WPc ₂ and CPc ₂ is shorter than the distance between WPc ₁ and CPc ₁ .
(2) The probe for a surface electrode has a contact portion that is held on the first or second wafer chuck plate and comes into contact with the surface electrode of the wafer to be inspected.
(3) The probe for the back surface electrode has a contact portion that comes into contact with the upper surface of the first or second contact plate.
(4) When held in the first or second position, the upper surface of the first or second wafer chuck plate and the upper surface of the first or second contact plate are electrically conductive, respectively. Ori,
(5) The contact portion of the front electrode probe and the back surface electrode are arranged in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion of the front electrode probe and the contact portion of the back surface electrode probe. A conductive bar that forms part of the electrical connection path between the contact portion of the probe and the tester, and has a length corresponding to the distance between WPc ₁ and CPc ₁ and a first inductance cancel bar. A second inductance canceling bar having a length corresponding to the distance between the WPc ₂ and the CPc ₂ and shorter than the first inductance canceling bar.
The above problem is solved by providing an inspection device for a semiconductor device.

As described above, in the inspection apparatus of the present invention, the wafer chuck plate that holds the wafer to be inspected and the contact plate that contacts the contact portion of the probe for the back surface electrode are the size of the wafer to be inspected separately from the chuck stage. That is, a plurality of sets are prepared, for example, as a set of a first wafer chuck plate and a first contact plate, or a set of a second wafer chuck plate and a second contact plate according to the diameter of the wafer. Moreover, these wafer chuck plates and contact plates are placed in the chuck stage, for example, the first wafer chuck plate and the first contact plate are in the first position, and the second wafer chuck plate and the second contact plate are in the second position. , And so on, the mounting position is changed for each set so that it can be detachably held.

Therefore, in the inspection apparatus of the present invention, even if the diameter of the wafer to be inspected changes, the first wafer chuck plate and the first contact plate having a size suitable for the wafer of that diameter, or the second Since the wafer chuck plate and the second contact plate can be held in the first position or the second position on the chuck stage suitable for inspecting the wafer of the diameter, the distance between the wafer chuck plate and the contact plate is to be inspected. The length can always be the minimum required according to the diameter of the wafer.

Moreover, in the inspection device of the present invention, for example, the inductance cancel bar arranged in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion of the probe for the front surface electrode and the contact portion of the probe for the back surface electrode is also described. A first inductance cancel bar having a length corresponding to the distance between the centers of the first wafer chuck plate and the first contact plate when held in the first position, and a second wafer chuck when held in the second position. A plurality of second inductance canceling bars having a length corresponding to the distance between the centers of the plate and the second contact plate are prepared. Therefore, in the inspection apparatus of the present invention, in addition to changing the positions of the wafer chuck plate and the contact plate to be held on the chuck stage according to the diameter of the wafer to be inspected, the changed wafer chuck plate. And by using either the first inductance canceling bar or the second inductance canceling bar according to the size and holding position of the contact plate, even if the wafer diameter changes, the contact part of the probe for the front electrode or the probe for the back electrode The length of the electrical connection path connecting the contact part and the tester can always be maintained at a constant shortest length, and the parasitic inductance generated in the measurement path can always be maintained to the minimum, enabling accurate measurement. ..

In the inspection apparatus of the present invention, the plate holding first means for detachably holding the first wafer chuck plate and the first contact plate at the first position on the chuck stage is the first wafer chuck plate and the first contact plate. It suffices if it can be detachably held in one position, and there are no particular restrictions on its specific structure or mechanism. However, from the viewpoint that the holding force is relatively strong and the attachment / detachment control can be performed relatively easily, the first wafer chuck plate or the first contact plate is placed in the first position in the plate holding first means. When, the wafer chuck plate first suction port or contact plate first suction port and the wafer chuck plate first suction port that open in the upper surface area of the chuck stage facing the back surface of the first wafer chuck plate or the first contact plate. Alternatively, it preferably includes a suction means connected to the first suction port of the contact plate.

When the plate holding first means includes the above-mentioned wafer chuck plate first suction port or contact plate first suction port and the suction means connected thereto, the operation of the suction means is turned on and off. Thereby, the first wafer chuck plate or the first contact plate can be held at the first position on the chuck stage, and the holding thereof can be released.

The same applies to the plate holding second means for detachably holding the second wafer chuck plate or the second contact plate in the second position on the chuck stage, and the second wafer chuck plate and the second contact plate are in the second position. As long as it can be detachably held, there are no particular restrictions on the specific structure or mechanism of the plate holding second means. However, for the same reason as described for the plate holding first means, the plate holding second means is the second wafer chuck plate or the second when the second wafer chuck plate or the second contact plate is placed in the second position. (Ii) Connect the wafer chuck plate second suction port or contact plate second suction port that opens in the upper surface area of the chuck stage facing the back surface of the contact plate to the wafer chuck plate second suction port or contact plate second suction port. It is preferable to include a suction means to be used.

When the plate holding second means includes the above-mentioned wafer chuck plate second suction port or contact plate second suction port and the suction means connected thereto, the operation of the suction means is turned on and off. Thereby, the second wafer chuck plate or the second contact plate can be held at the second position on the chuck stage, and the holding thereof can be released.

The back surfaces of the first and second wafer chuck plates in contact with the upper surface of the chuck stage and the first and second contact plates may be flat, but may be held at the first position or the second position by suction. On the back surface of each plate, the first or second suction that opens on the upper surface of the chuck stage when each plate is placed in the first position or the second position. It is desirable to have a bottomed groove that communicates with the mouth at least in one place and is closed within the back of each plate. The fact that each plate is closed inside the back surface means that the groove provided on the back surface does not communicate with the outside at a portion other than the back surface.

Alternatively, when each plate is placed in the first or second position instead of providing the above-mentioned grooves on the back surfaces of the first and second wafer chuck plates and the first and second contact plates, the respective plates. In the upper surface region of the chuck stage covered with the back surface of the chuck stage, a bottomed groove that communicates with the first or second suction port at at least one place and is closed in the upper surface of the chuck stage may be provided. Further, for the first and second wafer chuck plates, the groove may be provided on the upper surface of the chuck stage, and for the first and second contact plates, the groove may be provided on the back surface of each contact plate. good.

Further, in a preferred example thereof, the inspection apparatus of the present invention has a chuck stage having at least two first convex portions or first concave portions on the upper surface thereof for positioning the first wafer chuck plate in the first position. , It is desirable to have at least two second protrusions or recesses for positioning the second wafer chuck plate in the second position. When the chuck stage in the inspection device of the present invention has such a convex portion or a concave portion for positioning, the first wafer chuck plate or the second wafer chuck plate is placed on the chuck stage. The advantage is that it can be easily positioned in the first position or the second position.

The first convex portion or the first concave portion and the second convex portion or the second concave portion may be provided completely separately, and one or more of the first convex portion or the first concave portion is the first. It may also have two convex portions or second concave portions and may have one or more common convex portions or concave portions. This means that the first convex portion or the first concave portion for positioning the first contact plate described below in the first position, and the second convex portion or the second for positioning the second contact plate in the second position. The same applies to the recesses.

When the chuck stage has a convex portion or a concave portion for positioning as described above, the first wafer chuck plate and the second wafer chuck plate positioned at a predetermined position using the convex portion or the concave portion. Needless to say, the back surface is provided with a concave portion or a convex portion that fits with the convex portion or the concave portion at the time of positioning.

Further, in a suitable example thereof, the inspection device of the present invention has a chuck stage having at least two first protrusions or first recesses on the upper surface thereof for positioning the first contact plate in the first position. It is desirable to have at least two second protrusions or recesses for positioning the second contact plate in the second position. When the chuck stage in the inspection device of the present invention has such a convex or concave portion for positioning, the first contact plate or the second contact plate can be easily placed on the chuck stage. The advantage of being able to position in the first or second position is obtained.

Similar to the case of the first or second wafer chuck plate, when the chuck stage has a convex or concave portion for positioning as described above, the convex or concave portion is used to position the chuck stage in a predetermined position. Needless to say, the back surfaces of the first contact plate and the second contact plate are provided with a concave portion or a convex portion that fits with the convex portion or the concave portion at the time of positioning.

In still another suitable example, the chuck stage in the inspection apparatus of the present invention has a wafer suction port and a suction means connected to the wafer suction port on the upper surface thereof. The wafer suction port is for wafer suction that opens on the back surface of the first wafer chuck plate or the second wafer chuck plate when the first wafer chuck plate or the second wafer chuck plate is placed in the first position or the second position. When the wafer suction port is sucked by operating the suction means, the suction negative pressure is opened on the back surface of the first wafer chuck plate or the second wafer chuck plate. It is supplied from a negative pressure inlet for wafer suction to a large number of wafer suction holes opened on the upper surface of the first wafer chuck plate or the second wafer chuck plate through a communication path formed in each plate. The wafer placed on it is adsorbed.

Two wafer suction ports may be provided on the upper surface of the chuck stage, one for the first wafer chuck plate and the other for the second wafer chuck plate. Only one wafer suction port may be provided and the first wafer chuck plate may be provided. May be shared both in the case of using and the case of using the second wafer chuck plate.

Further, in the inspection apparatus of the present invention, in another suitable example thereof, the chuck stage comes into contact with the back surface of the inspection target wafer existing on the first wafer chuck plate held in the first position, and the inspection target is concerned. It has a first lift pin that moves the wafer up and down, and a second lift pin that contacts the back surface of the wafer to be inspected on the second wafer chuck plate held at the second position and moves the wafer to be inspected up and down. is doing.

When the chuck stage in the inspection device of the present invention has the first lift pin and the second lift pin, the wafer is inspected using the first wafer chuck plate held in the first position. Also, even when inspecting the wafer using the second wafer chuck plate held in the second position, the wafer transfer device is used to inspect on the first or second lift pin in the raised position. After mounting the target wafer, the first or second lift pin is lowered to mount the inspection target wafer on the first or second wafer chuck plate, and conversely, the first or second lift pin is raised. Then, the inspected wafer can be lifted upward from the first or second wafer chuck plate and carried out by the wafer transfer device.

In yet another preferred example, the inspection device of the present invention comprises a control device, wherein the control device relates to a means for receiving input of information regarding the diameter (size) of the wafer to be inspected and a wafer diameter. A storage device that stores the correspondence between the information and the plate holding first means or the plate holding second means, and / or the correspondence between the information about the diameter of the wafer and the first lift pin or the second lift pin, and the received wafer. Either the plate holding first means or the plate holding second means and / or either the first lift pin or the second lift pin is selectively actuated based on the information about the diameter and the above-mentioned stored correspondence. Have the means to make it.

When the inspection device of the present invention is provided with the control device, the plate holding first means is required by automatically or manually inputting information on the diameter (size) of the wafer to be inspected to the control device. Alternatively, since the plate holding second means, further, the first lift pin or the second lift pin is automatically selected and operated, there is an advantage that manual confirmation and switching operation are not required.

Further, the present invention is a method for inspecting a semiconductor device performed by using the above-mentioned semiconductor device inspection device according to the present invention.
The process of recognizing the diameter (size) of the wafer to be inspected next,
A process of determining whether the wafer chuck plate, the contact plate, and the inductance canceling bar need to be replaced based on the recognized wafer diameter.
When it is determined that replacement is required, the first wafer chuck plate and first contact plate, or the second wafer chuck plate and second contact plate are placed in the first position on the chuck stage or based on the recognized wafer diameter. The process of placing in the second position,
The step of activating either the plate-holding first means or the plate-holding second means based on the recognized wafer diameter,
When it is determined that replacement is necessary, either the first inductance canceling bar or the second inductance canceling bar is used as the contact part of the probe for the front electrode or the contact part of the probe for the back electrode based on the recognized diameter of the wafer. The process of connecting in the electrical connection path between the tester and the tester,
The above-mentioned problem is solved by providing the inspection method of the semiconductor device including.

As described above, according to the inspection method of the present invention, the diameter (size) of the wafer to be inspected next is recognized, and based on the recognized wafer diameter, the wafer chuck plate, the contact plate, and the inductance canceling bar are used. Since the necessity of replacement is determined and necessary replacement is performed, and the plate holding first means or the plate holding second means to be operated, which is necessary in association with the replacement, is switched, the diameter of the wafer to be inspected is increased. Even if it changes, the distance between the contact part of the probe for the front electrode and the contact part of the probe for the back electrode is always kept to the minimum necessary length, and the influence of the parasitic inductance generated in the measurement path is affected. The advantage is that the semiconductor device formed on the wafer can be inspected while keeping it to a minimum.

Further, the inspection method of the present invention comprises, in a preferred example thereof, the step of activating either the first lift pin or the second lift pin based on the recognized wafer diameter. When the inspection method of the present invention includes such a step, the diameter of the wafer to be inspected changes, and either the first wafer chuck plate or the second wafer chuck plate is held on the chuck stage. However, the wafer to be inspected is surely carried into the wafer chuck plate and the inspected wafer is surely carried out from the wafer chuck plate.

In the above description, the case where two sets of the first wafer chuck plate and the first contact plate and the second wafer chuck plate and the second contact plate having a smaller diameter than those are provided has been described. The semiconductor device inspection apparatus and inspection method of the present invention are not limited to those using two sets of a first wafer chuck plate and a first contact plate and a second wafer chuck plate and a second contact plate having different diameters. ..

The inspection apparatus and inspection method of the present invention have a diameter smaller than that of the first wafer chuck plate and the first contact plate, the second wafer chuck plate and the second contact plate, and further, the second wafer chuck plate and the second contact plate. The third wafer chuck plate and the third contact plate may be provided, in which case the first wafer chuck plate and the first contact plate and the second wafer chuck plate and the second contact plate are described above. All will also apply to the second wafer chuck plate and the second contact plate and the third wafer chuck plate and the third contact plate. The same applies to the case where the fourth wafer chuck plate and the fourth contact plate having a smaller diameter than the third wafer chuck plate and the third contact plate are provided.

According to the inspection device and the inspection method for the semiconductor device of the present invention, the diameters of the wafer chuck plate and the contact plate, their positions on the chuck stage, and the inductance canceling bar are determined according to the difference in the diameter of the wafer to be inspected. Since the length can be changed, the length of the electrical connection path between the tester and the probe for the front electrode and the length of the electrical connection path between the tester and the probe for the back electrode are always kept constant even if the diameter of the wafer to be inspected changes. Can be maintained and inspected. As a result, according to the inspection apparatus and inspection method of the present invention, it is possible to minimize the parasitic inductance generated in the measurement path and obtain the transient characteristics necessary for large current measurement and dynamic characteristic test close to the actual value of the semiconductor device. Therefore, there is an advantage that the inspection of the semiconductor device in the wafer state can be performed with high accuracy.

Further, according to the inspection apparatus and inspection method of the present invention, a wafer chuck plate that functions as a wafer holding portion on the upper surface of the chuck stage, instead of using the upper surface of the chuck stage itself as a wafer holding portion or a probe contact region. And since the contact plate that functions as the probe contact area is detachably held and used, if the wafer chuck plate or contact plate becomes dirty for some reason, it is always suitable to replace it with a clean one. There is an advantage that the semiconductor device can be inspected in the wafer state in the environment.

It is a front partial sectional view which shows an example of the inspection apparatus of the semiconductor device of this invention, and is the figure which shows the state which the 1st wafer chuck plate and the 1st contact plate are held in the 1st position. FIG. 3 is a plan view of the cross section of XX'in FIG. 1 as viewed from above. It is a figure which shows the relationship between the 1st wafer chuck plate and the 1st contact plate, and the 1st inductance cancel bar. It is a front partial sectional view which shows an example of the inspection apparatus of the semiconductor device of this invention, and is the figure which shows the state which the 2nd wafer chuck plate and the 2nd contact plate are held in the 2nd position. It is a top view of the XX'cross section of FIG. It is a figure which shows the relationship between the 2nd wafer chuck plate and the 2nd contact plate, and the 2nd inductance cancel bar. It is a figure which shows the relationship of the center position of the 1st and 2nd wafer chuck plates and the 1st and 2nd contact plates when it is in a 1st position and a 2nd position. It is a top view of the chuck stage. It is a partially enlarged view of FIG. It is a back view of the first wafer chuck plate and the first contact plate. It is a back view of the 2nd wafer chuck plate and the 2nd contact plate. It is a figure which shows the connection relationship between the various suction ports provided in a chuck stage, the suction means connected to them, the first and second lift pins, and the control device which controls their operation. It is a figure which shows the state which held the 1st wafer chuck plate and the 1st contact plate in the 1st position on a chuck stage. It is a figure which shows the state which held the wafer to be inspected on the 1st wafer chuck plate. It is a figure which shows the state in which the contact part of a probe was brought into contact with a wafer surface and the upper surface of a first contact plate, and an inspection current was applied. It is a figure which shows the state which held the 2nd wafer chuck plate and the 2nd contact plate in the 2nd position on a chuck stage. It is a figure which shows the state in which the contact part of a probe was brought into contact with the surface of a wafer and the upper surface of a second contact plate, and an inspection current was passed. It is a top view which shows the relationship between the conventional chuck stage, a wafer holding part, and a probe contact area. It is a top view which shows the relationship between the probe for a conventional front electrode and a probe for a back surface electrode, and a chuck stage. It is a top view which shows the state when the wafer of a relatively large diameter is inspected using the conventional chuck stage. It is a top view which shows the state at the time of inspecting a wafer of a relatively small diameter using a conventional chuck stage.

Hereinafter, the present invention will be described with reference to the drawings, taking IGBT, which is one of the semiconductor devices for electric power, as an example of the semiconductor device targeted by the inspection device of the present invention. Of course, the inspection device is not limited to the IGBT, and the inspection device of the present invention is not limited to the illustrated device.

FIG. 1 is a front partial cross-sectional view showing an example of an inspection device for a semiconductor device of the present invention, showing a state in which a first wafer chuck plate and a first contact plate are held at their respective first positions on a chuck stage. ing.

In FIG. 1, 1 is an inspection device for a semiconductor device of the present invention, 2 is an outer frame thereof, 3 is a chuck stage, 4 is an insulating plate on which a chuck stage 3 is placed and held, and 5 is a heat insulating plate. be. A heater (not shown) is interposed between the heat insulating plate 4 and the heat insulating plate 5. 6 is an XYZ-θ stage that moves the chuck stage 3 together with the insulating plate 4 and the insulating plate 5 in the XYZ and θ directions, 7 is a probe for a front electrode, 7A is a contact portion of a probe 7 for a front electrode, and 8 is a back electrode. 8A is a contact portion of the back electrode probe 8, 8B is a vertical conductive portion of the back electrode probe portion 8, 9 is a control device, and 10 is a tester.

WP1 is a first wafer chuck plate detachably held in the first position on the chuck stage 3, and CP1 is a first contact plate detachably held in the first position on the chuck stage 3. be. The thickness of the first wafer chuck plate WP1 is thinner than that of the first contact plate CP1, and when the wafer to be inspected described later is placed and held on the first wafer chuck plate WP1, the upper surface of the wafer is the first contact. It is selected to be located on the same plane as the upper surface of the plate CP1. As a result, by raising the chuck stage 3, the contact portion 7A of the probe 7 for the front electrode and the contact portion 8A of the probe 8 for the back surface electrode, which are installed at the same height position of the tip, are brought into contact with the upper surface of the wafer first. The contact plate CP1 can be brought into contact with the upper surface at the same time.

The LCB 1 is a first inductance canceling bar arranged above the chuck stage 3 in parallel with the upper surface of the chuck stage 3. The first inductance canceling bar LCB1 is composed of a conductive member, and its front end is connected to the contact portion 8A of the back electrode probe 8 and its rear end is connected to the vertical conductive portion 8B of the back electrode probe 8. It constitutes a part of the electrical connection path of the probe 8 for the back surface electrode connecting the contact portion 8A and the tester 10. In the illustrated example, the first inductance canceling bar LCB1 is configured separately from the contact portion 8 of the probe 8 for the back surface electrode, but the first inductance canceling bar LCB1 is integrated with the contact portion 8A. You may prepare what is formed or what is connected in advance to the contact portion 8A and connect it to the vertical conductive portion 8B. The same applies to the second inductance canceling bar LCB2, which will be described later. The same applies to the case where the first or second inductance canceling bar constitutes a part of the electrical connection path connecting the contact portion 7A of the surface electrode probe 7 and the tester 10.

In the inspection device 1 of this example, the first inductance canceling bar LCB1 is connected to the contact portion 8A of the back electrode probe 8, and the electrical connection path of the back electrode probe 8 connecting the contact portion 8A and the tester 10. However, it is connected to the contact portion 7A of the surface electrode probe 7 to form a part of the electrical connection path of the surface electrode probe 7 connecting the contact portion 7A and the tester 10. May be. In addition to the above members, the inspection device 1 includes a wafer cassette for accommodating a wafer to be inspected, a wafer transfer device, a microscope for alignment, and an image pickup device, but these are not shown.

FIG. 2 is a plan view of the XX'cross section of FIG. 1 as viewed from above, and for convenience, only the chuck stage 3 and the members located above the chuck stage 3 are taken out and shown. As shown in FIG. 2, the chuck stage 3 has a planar shape in which semicircles are connected to both ends of a rectangle. The first wafer chuck plate WP1 is a wafer chuck plate for a wafer having a relatively large diameter, for example, a diameter of 6 inches, and the planar shape of the upper surface thereof is circular, and the diameter WPd ₁ is the target wafer. Is selected to be large enough to be placed and held on the top surface. The WPc ₁ is the center of the upper surface of the first wafer chuck plate WP1.

The first contact plate CP1 is used together with the first wafer chuck plate WP1 and forms a pair with the first wafer chuck plate WP1, and the planar shape of the upper surface thereof is circular like the first wafer chuck plate WP1. The diameter CPd ₁ of the first contact plate CP1 is used for the back surface electrode when the contact portion 7A of the surface electrode probe 7 relatively moves on the upper surface of the wafer to be inspected held on the first wafer chuck plate WP1 during inspection. The contact portion 8A of the probe 8 is set to be the same as or slightly larger than the diameter WPd ₁ of the first wafer chuck plate WP1 so that the contact portion 8A does not come off from the first contact plate CP1. The CPc ₁ is the center of the upper surface of the first contact plate CP1.

The planar shape of the upper surfaces of the first wafer chuck plate WP1 and the first contact plate CP1 is usually circular because the planar shape of the wafer to be inspected is usually circular. As long as the wafer can be held, it is not necessarily limited to a circular shape, but may be an elliptical shape or a polygonal shape. However, when the planar shapes of the upper surfaces of the first wafer chuck plate WP1 and the first contact plate CP1 are not circular, the diameter WPd 1 of the first wafer chuck plate WP1 and the diameter WPd ₁ of the first wafer chuck plate WP1 have the diameter of the maximum circle that can be drawn on each upper surface. The diameter CPd 1 of the first contact plate CP1 shall be the diameter CPd ₁ , and the center of the largest circle shall be the center WPc ₁ of the first wafer chuck plate WP1 and the diameter CPc ₁ of the first contact plate CP1. The same applies to the second wafer chuck plate and the second contact plate, which will be described later.

In FIG. 2, Pinh ₁ is a first lift pin hole through which the first lift pin passes when it moves up and down. The first lift pin (not shown) passes through the first lift pin hole Pinh ₁ from a position where the top thereof is below the upper surface of the chuck stage 3, and the top thereof is above the upper surface of the first wafer chuck plate WP1. The first wafer chuck plate WP1 rises to a position, or conversely, descends from a position above the upper surface of the first wafer chuck plate WP1 to a position below the upper surface of the chuck stage 3. The wafer placed on the wafer can be lifted, or the wafer can be placed on the first wafer chuck plate WP1.

In the inspection device 1 of this example, the first wafer chuck plate WP1 and the first contact plate CP1 are both made of a conductive material such as copper which has been rust-proof plated, and the chuck stage 3 also has a chuck stage 3. Since the same is true, as shown in FIGS. 1 and 2, the first wafer chuck plate WP1 and the first contact plate CP1 are placed in a predetermined first position with the back surface of the first wafer chuck plate WP1 and the first contact plate CP1 in contact with the upper surface of the chuck plate 3. When placed and held, the upper surface of the first wafer chuck plate WP1 and the upper surface of the first contact plate CP1 are electrically conductive via the chuck stage 3.

FIG. 3 is a diagram showing the first inductance canceling bar LCB1 shifted from the top of the chuck stage 3 in order to explain the relationship between the first wafer chuck plate WP1 and the first contact plate CP1 and the first inductance canceling bar LCB1. Is.

As shown in FIG. 3, the horizontal distance L1 between the center WPc ₁ of the _first wafer chuck plate WP1 and the center CPc ₁ of the first contact plate CP1 is the tip and back electrode of the contact portion 7A of the probe 7 for the front electrode. It is _equal to the horizontal distance D1 between the probe 8 and the tip of the contact portion 8A. In other words, the length LCBd ₁ of the first inductance canceling bar LCB1 is centered on the first wafer chuck plate WP1 and the first contact plate CP1 when they are held in the first position shown on the chuck stage 3. Corresponding to the horizontal distance L ₁ between WPc ₁ and CPc ₁ , the horizontal distance D ₁ between the tip of the contact portion 7A of the front electrode probe 7 and the tip of the contact portion 8A of the back electrode probe 8 is It is chosen to be _equal to L1. The tips of the contact portion 7A and the contact portion 8A mean protruding portions that come into contact with the surface electrode of the wafer and the upper surface of the first contact plate, respectively, at the time of inspection.

As described above, since the length LCBd ₁ of the first inductance canceling bar LCB1 is selected so that D ₁ = L ₁ , the contact portion 7A of the probe 7 for the surface electrode is the first wafer chuck plate at the time of inspection. When the contact portion 8A of the probe 8 for the back surface electrode also moves relatively in the upper surface of the wafer to be inspected held on the WP1, the contact portion 8A of the probe 8 for the back surface electrode also moves relatively in the upper surface of the first contact plate CP1 without coming off. The semiconductor device on the wafer can be inspected while keeping the distance D1 between the tip of the contact portion 7A of the probe 7 for the front electrode and the tip of the contact portion 8A of the probe ₈ for the back electrode always at the shortest length. It can be carried out.

FIG. 4 shows a state in which the second wafer chuck plate and the second contact plate are held at the respective second positions on the chuck stage 3. The same members as in FIG. 1 are designated by the same reference numerals.

In FIG. 4, the WP2 is detachably held in the second position on the chuck stage 3, and the CP2 is detachably held in the second position on the chuck stage 3. Two contact plates. Similar to the description of the first wafer chuck plate WP1, the thickness of the second wafer chuck plate WP2 is thinner than that of the second contact plate CP2, and the wafer to be inspected described later is placed and held on the second wafer chuck plate WP2. The upper surface of the wafer is selected so as to be coplanar with the upper surface of the second contact plate CP2 when the wafer is formed. As a result, as described above, by raising the chuck stage 3, the contact portion 7A of the probe 7 for the front electrode and the contact portion 8A of the probe 8 for the back surface electrode, which are installed at the same height position of the tip, are brought into the wafer. The upper surface and the upper surface of the second contact plate CP2 can be brought into contact with each other at the same time.

The LCB 2 is a second inductance canceling bar arranged above the chuck stage 3 in parallel with the upper surface of the chuck stage 3. Like the first inductance canceling bar LCB1, the second inductance canceling bar LCB2 is composed of a conductive member, the front end thereof is connected to the contact portion 8A of the probe 8 for the back surface electrode, and the rear end thereof is the back surface electrode. It is connected to the vertical conductive portion 8B of the probe 8 and constitutes a part of the electrical connection path of the back electrode probe 8 connecting the contact portion 8A and the tester 10. Even if the second inductance canceling bar LCB2 is connected to the contact portion 7A of the surface electrode probe 7 to form a part of the electrical connection path of the surface electrode probe 7 connecting the contact portion 7A and the tester 10. The good thing is the same as described above for the first inductance canceling bar LCB1.

FIG. 5 is a plan view of the XX'cross section of FIG. 4 as viewed from above, and for convenience, only the chuck stage 3 and the members located above the chuck stage 3 are taken out and shown. As can be seen in FIG. 5, the planar shape of the upper surface of the second wafer chuck plate WP2 is circular like the first wafer chuck plate WP1, but the second wafer chuck plate WP2 has a relatively smaller diameter than the first wafer chuck plate WP1. For example, a wafer having a diameter of 4 inches is targeted, and the diameter WPd ₂ is smaller than the diameter WPd1 of the first wafer chuck plate WP1. The WPc ₂ is the center of the upper surface of the second wafer chuck plate WP2.

The second contact plate CP2 is used together with the second wafer chuck plate WP2 and forms a pair with the second wafer chuck plate WP2, and the planar shape of the upper surface thereof is circular like the second wafer chuck plate WP2. The diameter CPd ₂ of the second contact plate CP2 is used for the back surface electrode when the contact portion 7A of the surface electrode probe 7 relatively moves on the upper surface of the wafer to be inspected held on the second wafer chuck plate WP2 during inspection. The contact portion 8A of the probe 8 is set to be the same as or slightly larger than the diameter WPd ₂ of the second wafer chuck plate WP2 so that the contact portion 8A does not come off from the second contact plate CP2. The CPc ₂ is the center of the upper surface of the second contact plate CP2.

Since the planar shape of the upper surface of the second wafer chuck plate WP2 and the second contact plate CP2 is usually circular, the planar shape of the wafer to be inspected is usually selected to be circular. As long as the wafer can be held, it is not necessarily limited to a circular shape, and may be an elliptical shape or a polygonal shape, as in the first wafer chuck plate WP1 and the first contact plate CP1. ..

In FIG. 5, Pinh ₂ is a second lift pin hole through which the second lift pin passes when it moves up and down. The second lift pin (not shown) passes through the second lift pin hole Pinh ₂ from a position where the top thereof is below the upper surface of the chuck stage 3, and the top thereof is above the upper surface of the second wafer chuck plate WP2. The second wafer chuck plate WP2 rises to a position, or conversely, descends from a position above the upper surface of the second wafer chuck plate WP2 to a position below the upper surface of the chuck stage 3. The wafer placed on the wafer can be lifted, or the wafer can be placed on the second wafer chuck plate WP2.

11 ₁ is a suction groove for the _first wafer chuck plate PW1 provided on the upper surface of the chuck stage 3, and 131 is a contact plate first suction port for the first contact plate CP1 opened on the upper surface of the chuck stage 3, 15 ₁ Is a positioning convex portion for the first contact plate CP1 provided on the upper surface of the chuck stage 3, which will be described later.

Like the first wafer chuck plate WP1 and the first contact plate CP1, the second wafer chuck plate WP2 and the second contact plate CP2 are both made of a conductive material such as copper which has been rust-proof plated. As shown in FIGS. 4 and 5, when the second wafer chuck plate WP2 and the second contact plate CP2 are placed and held in a predetermined second position by abutting the back surface thereof with the upper surface of the chuck plate 3. The upper surface of the second wafer chuck plate WP2 and the upper surface of the second contact plate CP2 are electrically conductive via the chuck stage 3.

FIG. 6 is a diagram showing the second inductance canceling bar LCB2 shifted from the top of the chuck stage 3 in order to explain the relationship between the second wafer chuck plate WP2 and the second contact plate CP2 and the second inductance canceling bar LCB2. Is.

As shown in FIG. 6, the horizontal distance L2 between the center WPc ₂ of the _second wafer chuck plate WP2 and the center CPc ₂ of the second contact plate CP2 is the tip and back electrode of the contact portion 7A of the probe 7 for the front electrode. It is equal to the horizontal distance D2 between the probe ₈ and the tip of the contact portion 8A. In other words, the length LCBd ₂ of the second inductance canceling bar LCBd 2 is centered on the second wafer chuck plate WP2 and the second contact plate CP2 when they are held in the second position shown on the chuck stage 3. Corresponding to the horizontal distance L ₂ between WPc ₂ and CPc ₂ , the horizontal distance D ₂ between the tip of the contact portion 7A of the front electrode probe 7 and the tip of the contact portion 8A of the back electrode probe 8 is It is chosen to be equal to L ₂ .

As described above, since the length LCBd ₂ of the second inductance canceling bar LCB2 is selected so that D ₂ = L ₂ , the contact portion 7A of the surface electrode probe 7 is the second wafer chuck plate at the time of inspection. When the contact portion 8A of the probe 8 for the back surface electrode also moves relatively in the upper surface of the wafer to be inspected held on the WP2, the contact portion 8A of the probe 8 for the back surface electrode also moves relatively in the upper surface of the second contact plate CP2 without coming off. The semiconductor device on the wafer can be inspected while keeping the distance D2 between the tip of the contact portion 7A of the probe 7 for the front electrode and the tip of the contact portion 8A of the probe ₈ for the back electrode always at the shortest length. It can be carried out.

7 shows, from FIGS. 3 and 6, the center WPc ₁ and CPc ₁ of the first wafer chuck plate WP1 and the first contact plate CP1 when held in the first position, and FIG. 7 when held in the second position. It is a top view which shows only the center WPc ₂ and CPc ₂ of the 2nd wafer chuck plate WP2 and the 2nd contact plate CP2 taken out together with a chuck stage 3. In the figure, V is a line segment connecting the center WPc ₁ and the center CPc ₁ . For reference, the first and second wafer chuck plates WP1 and WP2, and the first and second contact plates CP1 and CP2 held in the first position or the second position are shown by broken lines.

As shown in FIG. 7, the center WPc ₂ and CPc ₂ of the second wafer chuck plate WP2 and the second contact plate CP2 when held in the second position are the first wafer chuck plate when held in the first position. It is on the line segment V connecting the centers WPc ₁ and CPc ₁ of the WP1 and the first contact plate CP1, and the distance L2 between the centers WPc ₂ and CPc ₂ is the distance between the centers _{WPc 1} and CPc ₁ . Shorter _than L1.

As described above, the first position and the second position are such that the center WPc ₂ of the second wafer chuck plate WP2 and the center CPc ₂ of the second contact plate CP2 when held in the second position are in the first position. It is on the line segment V connecting the center WPc ₁ of the first wafer chuck plate WP1 and the center CPc ₁ of the first contact plate CP1 when held, and the distance L ₂ between the center WPc ₂ and the center CPc ₂ is The position is selected so as to be shorter than the distance L ₁ between the center WPc ₁ and the center CPc ₁ .

In this example, the center positions of the first wafer chuck plate WP1 and the second wafer chuck plate WP2 do not change between the first position and the second position, and WPc ₁ and WPc ₂ are at the same position. WPc ₂ may be located on the line segment V and may be located at a position different from WPc ₁ . Further, in this example, the center positions of the first contact plate CP1 and the second contact plate CP2 are different between the first position and the second position, and CPc ₂ is different from CPc ₁ on the line segment V. Although it is in a position, the center positions of the first contact plate CP1 and the second contact plate CP2 may be the same in the first position and the second position so that CPc ₂ is in the same position as CPc ₁ . Furthermore, both the center position of the first wafer chuck plate WP1 and the second wafer chuck plate WP2 and the center position of the first contact plate CP1 and the second contact plate CP2 are different between the first position and the second position. , WPc ₂ and CPc ₂ may both be located on the line segment V at different positions from WPc ₁ and CPc ₁ , respectively.

In any case, the length LCBd ₁ of the _first inductance canceling bar LCB1 corresponds to the distance L1 between the center WPc ₁ of the first wafer chuck plate WP1 and the center CPc ₁ of the first contact plate CP1 at the first position. The length LCBd ₂ of the _second inductance canceling bar LCB2 corresponds to the distance L2 between the center WPc ₂ of the second wafer chuck plate WP2 and the center CPc ₂ of the second contact plate CP2 at the second position. As is clear from the above, since L ₂ <L ₁ , the length LCBd ₂ of the second inductance canceling bar LCB 2 is shorter than the length LCBd ₁ of the first inductance canceling bar LCB 1.

That is, when the wafer to be inspected changes from a wafer having a relatively large diameter (for example, a wafer having a diameter of 6 inches) to a wafer having a relatively small diameter (for example, a wafer having a diameter of 4 inches), it is held at the first position on the chuck stage 3. Instead of the first wafer chuck plate WP1 and the first contact plate CP1 which have been made, the second wafer chuck plate WP2 and the second contact plate CP2 having a smaller diameter than those are held in the second position, and the first inductance thereof is also held. By using a second inductance cancel bar LCB2 shorter than the cancel bar LCB1, the contact portion 8A of the back electrode probe 8 or the contact portion 7A of the front electrode probe 7 and the tester 10 are electrically connected. The length of the path to be processed can be shortened from D ₁ when inspecting a wafer having a relatively large diameter to D ₂ when inspecting a wafer having a relatively small diameter. As a result, even if the diameter of the wafer to be inspected changes, the length of the electrical path connecting the contact portion and the tester 10 is always maintained at a constant shortest length, and the parasitic inductance generated in the measurement path is minimized. Therefore, the semiconductor device formed on the wafer can be inspected. Needless to say, when the wafer to be inspected changes from a wafer having a small diameter to a wafer having a large diameter, the reverse of the above operation may be performed.

FIG. 8 is a plan view of the chuck stage 3. For convenience, the first and second wafer chuck plates WP1 and WP2 in the first or second position, and the first and second contact plates CP1 and CP2 are shown by broken lines.

As can be seen in FIG. 8, on the upper surface of the chuck stage 3, a groove 11 for evenly distributing the suction negative pressure for sucking and holding the first wafer chuck plate WP1 over the entire back surface of the first wafer chuck plate WP1. ₁ is provided in a single layer, and similarly, a groove 1122 for evenly distributing the suction negative pressure for sucking and holding the _second wafer chuck plate WP2 over the entire back surface of the second wafer chuck plate WP2 is provided twice. Has been done. 22 ₁ is a wafer chuck plate first suction port, and 222 is a wafer chuck plate _second suction port. As shown in FIG. 9, which is an enlarged portion of FIG. 8, the wafer chuck plate first suction port 22 ₁ and the wafer chuck plate second suction port 22 ₂ are opened at the groove bottoms of the grooves 11 ₁ and 11 ₂ , respectively. , A suction means (not shown) is connected to each suction port.

Since the groove 11 ₁ or the groove 11 ₂ is for sucking and holding the first wafer chuck plate WP1 or the second wafer chuck plate WP2, as a matter of course, the first wafer chuck plate WP1 or the second wafer chuck plate When the WP2 is placed in the first position or the second position, it is open in the upper surface region of the chuck stage 3 facing the back surface of the first wafer chuck plate WP1 or the second wafer chuck plate WP2, and the groove 11 ₁ Alternatively, the same applies to the wafer chuck plate first suction port 22 ₁ and the wafer chuck plate second suction port 22 ₂ that open in the groove 11 ₂ . The groove 11 ₁ or the groove 11 ₂ has a portion communicating with the outside other than the upper surface of the chuck stage 3 and the wafer chuck plate first suction port 22 ₁ or the wafer chuck plate second suction port 22 ₂ . It is a groove that is closed in the upper surface of the chuck stage 3.

Reference numeral 12 denotes a wafer suction port that opens on the upper surface of the chuck stage 3, and a suction means (not shown) is connected to the wafer suction port 12.

Reference numeral 13 ₁ is a contact plate first suction port that opens on the upper surface of the chuck stage 3, and reference numeral 132 ₂ is a contact plate second suction port that also opens on the upper surface of the chuck stage 3. The contact plate first suction port 13 ₁ and the contact plate second suction port 13 ₂ are negative for sucking and holding the first contact plate CP1 and the second contact plate CP2 placed in the first position or the second position, respectively. Since it supplies pressure, it goes without saying that when the first contact plate CP1 or the second contact plate CP2 is placed in the first or second position, the first contact plate CP1 or the second contact plate It is open in the upper surface region of the chuck stage 3 facing the back surface of the CP 2.

Reference numeral 14 ₁ is a first convex portion for positioning used when the first wafer chuck plate WP 1 is positioned and placed at the first position. In this example, two convex portions 14 ₁ and 14 ₁ are chuck stages. It is provided on the upper surface of 3. In this example, the two _first convex portions 14 ₁ and 141 for the first wafer chuck plate WP1 are both positioned and placed in the second position for the second wafer chuck plate WP2. It also serves as the second convex portion for positioning used, and both of them are common. Of course, one or two or more of the second convex portions for the second wafer chuck plate WP2 may be provided separately from the first convex portions for the first wafer chuck plate WP1. Further, the number of the first convex portion or the second convex portion may be at least two and is not limited to two. Further, it goes without saying that a concave portion may be used instead of the convex portion.

Reference numeral 15 ₁ is a first convex portion for positioning used when the first contact plate CP 1 is positioned and placed in the first position. In this example, two convex portions 15 ₁ and 15 ₁ are chuck stages 3. It is provided on the upper surface of the. On the other hand, reference numeral 152 denotes a _second convex portion for positioning used when the second contact plate CP2 is positioned and placed at the second position, and in this example, one of the two second convex portions. Also serves as the first convex portion 151, and _{one of the two is common to the first convex portion 15 1 and} the second convex portion 152 ₂ . Of course, all of the _two second convex portions 152 for the second contact plate CP2 may be provided separately from the first convex portion 15 ₁ for the first contact plate CP1, and the first convex portion or the first convex portion may be provided. Needless to say, the number of biconvex portions is not limited to two. Further, it is of course possible to use a concave portion instead of the convex portion.

FIG. 10 is a back view of the first wafer chuck plate WP1 and the first contact plate CP1. In FIG. 10, the _first wafer chuck plate WP1 is provided at a position facing the wafer suction port 12 provided on the upper surface of the chuck stage 3 when the first wafer chuck plate WP1 is placed at the first position on the chuck stage 3. It is a negative pressure inlet. The negative pressure introduction port 161 communicates with a large number of wafer suction holes opened on the upper surface of the _first wafer chuck plate WP1 via a communication passage formed in the first wafer chuck plate WP1. When a negative pressure is supplied from the wafer suction port 12, the negative pressure is supplied to the wafer suction hole opened on the upper surface of the first wafer chuck plate WP1 and the wafer is sucked on the wafer suction hole.

Reference numeral 18 ₁ is a groove for distributing negative pressure for suction provided on the back surface of the first contact plate CP 1, and when the first contact plate CP 1 is placed at the first position on the chuck stage 3, the groove thereof is provided. At the location indicated by reference numeral ₁₃₁ in the center, the contact plate first suction port 131 provided on the upper surface of the chuck stage 3 is opposed to and communicates with the contact plate _first suction port 131. The groove 18 ₁ is a groove that does not communicate with the outside except for the back surface of the first contact plate CP1 and is closed inside the back surface of the first contact plate CP1.

17 ₁ and 19 ₁ are the first convex portion 14 ₁ for positioning provided on the upper surface of the chuck stage 3 when the first wafer chuck plate WP1 or the first contact plate CP1 is placed in the first position. It is _a recess for positioning that fits with 151 respectively.

FIG. 11 is a back view of the second wafer chuck plate WP2 and the second contact plate CP2. In FIG. 11, the second wafer chuck plate WP ₂ is provided at a position facing the wafer suction port 12 provided on the upper surface of the chuck stage 3 when the second wafer chuck plate WP 2 is placed at the second position on the chuck stage 3. It is a negative pressure inlet. The negative pressure introduction port 162 communicates with a large number of wafer suction holes opened on the upper surface of the _second wafer chuck plate WP2 via a communication passage formed in the second wafer chuck plate WP2. When a negative pressure is supplied from the wafer suction port 12, the negative pressure is supplied to the wafer suction hole opened on the upper surface of the second wafer chuck plate WP2, and the wafer is sucked on the wafer suction hole.

Reference numeral 182 is a groove for distributing negative pressure for suction provided on the back surface of the _second contact plate CP2, and when the second contact plate CP2 is placed at the second position on the chuck stage 3, the groove thereof is provided. At the left end indicated by reference numeral 132, the contact plate _second suction port 132 provided on the upper surface of the chuck stage 3 is opposed to and communicates with the contact plate _second suction port 132. The groove 182 is a groove that does not communicate with the outside except the back surface of the _second contact plate CP2 and is closed inside the back surface of the second contact plate CP2.

17 ₂ and 192 are the _second convex portion 14 ₁ for positioning provided on the upper surface of the chuck stage 3 when the second wafer chuck plate WP2 or the second contact plate CP2 is placed in the second position. It is a recess for positioning that _fits with 152.

FIG. 12 is a diagram showing a connection relationship between various suction ports provided on the chuck stage 3, suction means connected to the suction ports, first and second lift pins, and a control device 9 for controlling their operation. ..

In FIG. 12, 20 ₁ to ₂₀₅ are on-off valves, and 21 ₁ to 213 _are pumps that are suction means. The broken line indicates the pipeline. The pump 21 ₁ is connected to a wafer chuck plate first suction port 22 ₁ communicating with a groove 11 ₁ provided on the chuck stage 3 by a pipeline, and an on-off valve 201 ₁ is connected in the middle of the pipeline. It is provided. The pump 21 ₁ which is a suction means is also connected to the wafer chuck plate second suction port 22 ₂ communicating with the groove 11 ₂ provided on the chuck stage 3 by a pipe line, and opens and closes in the middle of the pipe line. A valve ₂₀₂ is provided. The operations of the on-off valves _{20 1} and 202 and the pump 21 ₁ are controlled by a signal from the control unit 9a of the control device 9.

_On the other hand, the pump 211, which is a suction means, is connected to the wafer suction port 12 provided on the chuck stage ₃ by a pipeline, and an on-off valve 203 is provided in the middle of the pipeline. The operations of the on-off valve ₂₀₃ and the pump 211 are also controlled by signals from the control unit 9a of the control device ₉ .

Further, the pump 21 ₃ which is a suction means has a contact plate first suction port 13 ₁ and a contact which are opened on the chuck stage 3 via a conduit provided with an _on -off valve 204 or an on _- off valve 25 in the middle. It is connected to the plate _second suction port 132. The operations of the on _- off valves 204 and ₂₀₅ and the pump 213 _are also controlled by signals from the control unit 9a of the control device 9.

Further, the control unit 9a of the control device 9 is also connected to a first lift pin drive mechanism and a second lift pin drive mechanism (not shown), and controls the vertical movement of the first lift pin and the second lift pin.

In addition to the control unit 9a, the control device 9 has information on the diameter of the wafer to be inspected, the correspondence between the first or second wafer chuck plate and the first or second contact plate, and the diameter of the wafer to be inspected. XYZ-θ stage 6 and a storage device 9b that stores the correspondence between the information about the wafer and the suction means to be operated and the on-off valve, and / or the correspondence between the information about the wafer diameter and the first lift pin or the second lift pin. The XYZ-θ stage control unit 9c for controlling the operation of the above and the input / output unit 9d are provided.

Hereinafter, the operation of the inspection device according to the present invention will be described with reference to FIGS. 12 to 17. In the following description, a case where a wafer having a diameter of 6 inches as a relatively large-diameter wafer and a wafer having a diameter of 4 inches as a relatively small-diameter wafer are to be inspected will be described as an example. This is just an example, and the wafers targeted by the inspection apparatus and inspection method according to the present invention are not limited to those having a diameter of 6 inches and a diameter of 4 inches.

First, when a wafer with a relatively large diameter of 6 inches is planned as the first wafer to be inspected, a person visually or otherwise recognizes that the target wafer has a diameter of 6 inches, and the wafer diameter is reached. Alternatively, information regarding the wafer size is input to the control device 9 via the input / output unit 9d. Alternatively, the size of the next scheduled wafer is automatically identified by a signal from the outside or a sensor that identifies the wafer diameter, and is automatically input to the control device 9 via the input / output unit 9d. Is also good.

Next, when the planned wafer size is input, the control unit 9a of the control device 9 has the wafer chuck plate and the contact plate currently held on the chuck stage 3 as the first wafer chuck plate WP1 and the first wafer chuck plate WP1. Whether or not it is one contact plate CP1 is identified based on, for example, information on whether the lift pin driven in the immediately preceding inspection is the first lift pin or the second lift pin, and the wafer chuck plate and contact plate, as well as Determine if the inductance cancel bar needs to be replaced. It should be noted that this determination may be made by visually identifying the types of the wafer chuck plate and the contact plate actually held on the chuck stage 3 by a human, or automatically by a displacement sensor, image processing, or the like. May be identified.

When it is determined that replacement is necessary, the first wafer chuck plate WP1 and the first contact plate CP1 corresponding to the wafer having a diameter of 6 inches are placed in the first position. Of course, this placement is performed using the _first convex portions 14 ₁ and 151 for positioning described above.

After the first wafer chuck plate WP1 and the first contact plate CP1 have been placed in the first position, the control unit 9a of the control device 9 automatically or waits for an external command to store the first wafer chuck plate WP1 and the first contact plate CP1 in the storage device 9b. Based on the stored information on the diameter of the wafer to be inspected and the correspondence between the suction means to be operated and the on-off valve, _an operation command is issued to the pump 211 shown in FIG. 12, and the on-off valve ₂₀₂ is closed. _The opening / closing valve 201 is opened, the groove 111 formed on the chuck stage 3 is sucked under _a negative pressure through the wafer chuck plate _first suction port 221, and the first wafer is placed at the first position. The chuck plate WP1 is attracted and held.

Further, the control unit 9a of the control device 9 automatically or waits for a command from the outside, and the information on the diameter of the wafer to be inspected stored in the storage device 9b and the suction means and the on-off valve to be operated. Based on the correspondence with the above _, an operation command is issued to the pump 213 shown in FIG. 12, the on-off valve 20 ₅ is closed, the on-off valve ₂₀₄ is opened, and the contact plate first suction port 13 ₁ is subjected to negative pressure. The first contact plate CP1 is attracted and held at the first position on the chuck stage 3.

As described above, regarding the first wafer chuck plate WP 1, the pump 21 ₁ , the on-off valve 201 ₁ , the wafer chuck plate first suction port 22 ₁ , and the groove 11 ₁ formed on the chuck stage 3 are suction means. With respect to the first contact plate CP 1, the pump 213 _, the on _- off valve 204, and the contact plate first suction port 13 ₁ constitute a plate holding first means for detachably holding each of them in the first position. It will be.

At the same time, the first inductance canceling bar LCB1 corresponding to the wafer having a diameter of 6 inches is connected manually or automatically between the contact portion 8A of the probe 8 for the back surface electrode and the vertical conductive portion 8B. It should be noted that the contact portion 8A of the back electrode probe 8 and the first inductance canceling bar LCB1 are integrally formed or connected in advance, and the contact portion 8A is connected to the vertical conductive portion 8B. You may do so.

In FIG. 13, as described above, the first wafer chuck plate WP1 and the first contact plate CP1 are attracted and held at the first position on the chuck stage 3, and are perpendicular to the contact portion 8A of the back electrode probe 8. It represents a state in which the first inductance canceling bar LCB1 is connected to the conductive portion 8B.

When the holding of the first wafer chuck plate WP1 and the first contact plate CP1 to the first position and the connection of the first inductance canceling bar LCB1 are completed, the control unit 9a of the control device 9 is stored in the storage device 9b. The first lift pin is raised above the top surface of the first wafer chuck plate based on the correspondence between the information about the wafer diameter and the first lift pin or the second lift pin. Next, the wafer transfer device is activated to transfer the wafer W to be inspected to the top of the first wafer chuck plate WP1 and place it on the first lift pin. When the wafer W is placed on the first lift pin, the control unit 9a of the control device 9 lowers the first lift pin and places the wafer W on the first wafer chuck plate WP1.

Subsequently, the control unit 9a of the control device 9 operates the pump 21 ₂ which is a suction means, opens the on _- off valve 203, sucks the wafer suction port 12 to a negative pressure, and opposes the pump 212. A large number of wafer suction holes opened on the upper surface of the _first wafer chuck plate WP1 are sucked through the pressure introduction port 161, and the wafer W is sucked and held on the first wafer chuck plate WP1. FIG. 14 shows a state in which the wafer W is adsorbed and held on the first wafer chuck plate WP1 in this way.

Next, the control unit 9a of the control device 9 issues a command to the XYZ-θ stage control unit 9c to operate the XYZ-θ stage 6, raise the chuck stage 3, and as shown in FIG. 15, for the surface electrode. The contact portion 7A of the probe 7 is brought into contact with the front surface electrode of the wafer W, and the contact portion 8A of the probe 8 for the back surface electrode is brought into contact with the upper surface of the first contact plate CP1. In this state, the electrical signal required for inspection is supplied from the tester 10 to the semiconductor device on the wafer W via the contact portion 7A of the probe 7 for the surface electrode, and the inspection is performed.

FIG. 15 shows a state in which the semiconductor device on the wafer W is inspected in this way. When the inspection current flows in the chuck stage 3 in the direction indicated by the white arrow in the figure, it passes through the contact portion 8A and flows in the first inductance canceling bar LCB1 in the direction indicated by the black arrow in the figure. Since the inductance canceling bar LCB1 is arranged parallel to the upper surface of the chuck stage 3, the magnetic field generated by the current flowing in the chuck stage 3 and the magnetic field generated by the current flowing in the first inductance canceling bar LCB1 are , The directions are reversed and they cancel each other out. Therefore, the effective inductance in the current path between the contact portion 7A and the contact portion 8A can be reduced, and the measurement with better transient characteristics and higher accuracy becomes possible.

When the diameter of the planned inspection target wafer W changes from 6 inches to 4 inches, the same procedure as described above may be performed. That is, when the diameter of the wafer W to be inspected next is recognized and it is determined that the wafer chuck plate or contact plate needs to be replaced, the first wafer chuck plate WP1 corresponding to the wafer having a diameter of 6 inches is determined. And, instead of the first contact plate CP1, the second wafer chuck plate WP2 and the second contact plate CP2 corresponding to the wafer having a diameter of 4 inches are placed in the second position.

After the second wafer chuck plate WP2 and the second contact plate CP2 have been placed in the second position, the control unit 9a of the control device 9 automatically or waits for an external command to the storage device 9b. Based on the stored information on the diameter of the wafer to be inspected and the correspondence between the suction means to be operated and the on-off valve, an operation command is issued to the pump 21 ₁ shown in FIG. 12, and the on _- off valve 201 is closed. The on-off valve ₂₀₂ is opened, and the groove 112 formed on the chuck stage ₃ is sucked under a negative pressure through the wafer chuck plate _second suction port 222, and the second wafer chuck is placed at the second position. Adsorbs and holds the plate WP2.

Further, the control unit 9a of the control device 9 automatically or waits for a command from the outside, and the information on the diameter of the wafer to be inspected stored in the storage device 9b and the suction means and the on-off valve to be operated. An operation command is issued to the pump ₂₁₃ shown in FIG. 12, the on-off valve 20 ₄ is closed, the on-off valve 20 ₅ is opened, and the contact plate _second suction port 132 is negatively pressured. The second contact plate CP2 is sucked and held at the second position on the chuck stage 3.

As described above, regarding the second wafer chuck plate WP2, the pump 21 ₁ which is the suction means, the on-off valve 202, the wafer chuck plate _second suction port 222, and the groove 11 ₂ formed on the chuck stage ₃ are provided. With respect to the second contact plate CP2, the pump 213 _, the on-off valve ₂₀₅ , and the contact plate first suction port 13 ₂ constitute a plate holding second means for detachably holding each of them in the second position. It will be.

At the same time, the second inductance canceling bar LCB2 corresponding to the wafer having a diameter of 4 inches is connected manually or automatically between the contact portion 8A of the probe 8 for the back surface electrode and the vertical conductive portion 8B.

In FIG. 16, as described above, the second wafer chuck plate WP2 and the second contact plate CP2 are attracted and held at the second position on the chuck stage 3, and are perpendicular to the contact portion 8A of the probe 8 for the back surface electrode. It represents a state in which the second inductance canceling bar LCB2 is connected to the conductive portion 8B.

Next, the control unit 9a of the control device 9 sets the second lift pin on the second wafer chuck plate based on the correspondence between the information on the wafer diameter stored in the storage device 9b and the first lift pin or the second lift pin. Raise it above the top surface. Subsequently, the wafer transfer device is activated to transfer the 4-inch wafer W to be inspected to the top of the second wafer chuck plate WP2 and place it on the second lift pin. When the wafer W is placed on the second lift pin, the control unit 9a of the control device 9 lowers the second lift pin and places the wafer W on the second wafer chuck plate WP2.

Subsequently, the control unit 9a of the control device 9 operates the pump 21 ₂ which is a suction means, opens the on _- off valve 203, sucks the wafer suction port 12 to a negative pressure, and opposes the pump 212. A large number of wafer suction holes opened on the upper surface of the _second wafer chuck plate WP2 are sucked through the pressure introduction port 162, and the wafer W is sucked and held on the second wafer chuck plate WP2.

Next, the control unit 9a of the control device 9 issues a command to the XYZ-θ stage control unit 9c to operate the XYZ-θ stage 6, raise the chuck stage 3, and as shown in FIG. 17, for the surface electrode. The contact portion 7A of the probe 7 is brought into contact with the front surface electrode of the wafer W, and the contact portion 8A of the probe 8 for the back surface electrode is brought into contact with the upper surface of the second contact plate CP2. In this state, the electrical signal required for inspection is supplied from the tester 10 to the semiconductor device on the wafer W via the contact portion 7A of the probe 7 for the surface electrode, and the inspection is performed.

Also in this case, as shown in FIG. 17, when the inspection current flows through the chuck stage 3 in the direction indicated by the white arrow in the figure, the inspection current passes through the contact portion 8A and is inside the second inductance canceling bar LCB2 in the figure. Although it flows in the direction indicated by the black arrow, since the second inductance canceling bar LCB2 is arranged parallel to the upper surface of the chuck stage 3, the magnetic field generated by the current flowing in the chuck stage 3 and the second inductance canceling bar LCB2 The magnetic fields generated by the current flowing through them are opposite in direction and cancel each other out. Therefore, the effective inductance in the current path between the contact portion 7A and the contact portion 8A can be reduced, and the measurement with better transient characteristics and higher accuracy becomes possible.

In the above description, the first wafer chuck plate WP1 and the first contact plate CP1 for a large diameter, the first inductance canceling bar LCB1 and the second wafer for a small diameter are described according to the size of the diameter of the wafer W to be inspected. Although the inspection device and the inspection method including the chuck plate WP2, the second contact plate CP2, and the second inductance canceling bar LCB2 have been described, the inspection device and the inspection method according to the present invention further include the wafer W to be inspected. A third and fourth wafer chuck plates, contact plates, and inductance cancel bars may be provided, depending on the diameter of the wafer, and include them.

Further, in the above description, the center position of the wafer chuck plate does not change between the first position and the second position, and only the contact plate changes the center position, but the contact between the first position and the second position. Regarding the plate, the center position does not change, and only the wafer chuck plate may change the center position. Furthermore, at the first position and the second position, both the wafer chuck plate and the contact plate have the center position. You may change it.

Further, in the above description, the grooves 11 _{1 and} 112 are formed on the upper surface of the chuck stage 3, and the grooves are not formed on the lower surfaces of the first and _second wafer chuck plates WP1 and WP2. A groove may be formed on the lower surfaces of the first and second wafer chuck plates WP1 and WP2 without forming a groove on the upper surface. Since the first and second chuck plates WP1 and WP2 are internally formed with a communication passage connecting the negative pressure introduction ports 16 ₁ or 162 and a large number of wafer suction holes, the first and _second chuck plates WP1 and WP2 are rather first. It is better to form the grooves 11 _{1 and} 112 on the upper surface of the chuck stage 3 _than to form the grooves on the lower surfaces of the first and second wafer chuck plates WP1 and WP2 of the first and second wafer chuck plates WP1 and WP2. It is preferable because the structure does not need to be complicated.

Further, in the above description, three convex portions 15 ₁ , 15 ₁ , 15 ₂ arranged side by side as positioning convex portions for positioning and mounting the first contact plate CP1 and the second contact plate CP2 on the chuck stage 3 are described. The central one is shared, but the leftmost (leftmost in _FIG . 8, the wafer chuck plate side) positioning convex portion 152 may be shared. That is, the first contact plate CP1 is positioned by the positioning protrusions located at the left and right ends of the three side by side, and the second contact plate CP2 is located at the center and the left side (the left side in FIG. 8 is the wafer chuck plate side). It may be fixed by the convex portion for positioning. In this case, when the first contact plate CP1 is attached, the central positioning protrusion comes below the first contact plate CP1 and prevents the lower surface of the first contact plate CP1 from coming into contact with the upper surface of the chuck stage 3. However, in order to avoid this, for example, it is preferable to form a relief hole having an inner diameter larger than the outer diameter of the central positioning convex portion at a corresponding portion on the lower surface of the first contact plate CP1.

As described above, according to the semiconductor device inspection device of the present invention and the inspection method using the same, in the inspection performed on a semiconductor device having electrodes on both the front and back surfaces of a wafer such as a power semiconductor device in the wafer state. Even if the size of the wafer to be inspected changes, the length of the electrical connection path between the tester and the probe for the front electrode and the probe for the back electrode is always maintained at a constant shortest length. Since it is possible to perform highly accurate measurement by minimizing the parasitic inductance generated in the measurement path, its industrial applicability is great.

1 Inspection device 2 Outer frame 3 Chuck stage 4 Inductance plate 5 Insulation plate 6 XYZ-θ stage 7 Front electrode probe 8 Back electrode probe 9 Control device 10 Tester W Wafer WP1, WP2 First and second wafer chuck plates CP1, CP2 1st and 2nd contact plates LCB1, LCB2 1st and 2nd inductance canceling bars

Claims (10)

It has a probe for front electrode and a probe for back electrode, a chuck stage that can move relative to both probes, and a tester that is electrically connected to both probes.
(1) The chuck stage is
(1-1) The first wafer chuck plate in which the wafer to be inspected is held on the upper surface thereof and the first contact plate in which the probe for the back surface electrode contacts the upper surface thereof are on the chuck stage and both plates are heavy. The first means of holding the plate, which is detachably held in the first position where it does not become
(1-2) A second wafer chuck plate having a diameter smaller than that of the first wafer chuck plate and a second contact plate having a diameter smaller than that of the first contact plate are placed on the chuck stage so that both plates do not overlap. Equipped with a plate holding second means to hold the plate detachably at two positions,
(1-3) WPc ₁ and CPc ₁ center on the upper surfaces of the first wafer chuck plate and the first contact plate when the first position and the second position are held in the first position, respectively. When the centers of the upper surfaces of the second wafer chuck plate and the second contact plate when held in the second position are WPc ₂ and CPc ₂ , respectively, WPc ₂ and CPc ₂ make WPc ₁ and CPc ₁ It is on a connecting line segment and is selected so that the distance between WPc ₂ and CPc ₂ is shorter than the distance between WPc ₁ and CPc ₁ .
(2) The probe for a surface electrode has a contact portion that is held on the first or second wafer chuck plate and comes into contact with the surface electrode of the wafer to be inspected.
(3) The probe for the back surface electrode has a contact portion that comes into contact with the upper surface of the first or second contact plate.
(4) When held in the first or second position, the upper surface of the first or second wafer chuck plate and the upper surface of the first or second contact plate are electrically conductive, respectively. Ori,
(5) The contact portion of the front electrode probe and the back surface electrode are arranged in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion of the front electrode probe and the contact portion of the back surface electrode probe. A conductive bar that forms part of the electrical connection path between the contact portion of the probe and the tester, and has a length corresponding to the distance between WPc ₁ and CPc ₁ and a first inductance cancel bar. A second inductance canceling bar having a length corresponding to the distance between the WPc ₂ and the CPc ₂ and shorter than the first inductance canceling bar.
Inspection equipment for semiconductor devices. When the first wafer chuck plate or the first contact plate is placed in the first position, the plate holding first means faces the first wafer chuck plate or the back surface of the first contact plate. Includes a wafer chuck plate first suction port or contact plate first suction port that opens in the upper surface region of the chuck stage, and suction means that is connected to the wafer chuck plate first suction port or contact plate first suction port. The inspection device for a semiconductor device according to claim 1. When the second wafer chuck plate or the second contact plate is placed in the second position, the plate holding second means faces the second wafer chuck plate or the back surface of the second contact plate. A wafer chuck plate second suction port or contact plate second suction port opened in the upper surface area of the chuck stage, and a suction means connected to the wafer chuck plate second suction port or the contact plate second suction port. The inspection device for a semiconductor device according to claim 1 or 2. The chuck stage has at least two first convex portions or first concave portions on the upper surface thereof for positioning the first wafer chuck plate at the first position, and the second wafer chuck plate at the second position. It is provided with at least two second convex portions or second concave portions for positioning the first convex portion or the first concave portion, and zero or one or more of the first convex portions or the first concave portions are common to the second convex portion or the second concave portion. The semiconductor device inspection apparatus according to any one of claims 1 to 3. The chuck stage positions at least two first protrusions or recesses on the upper surface thereof for positioning the first contact plate in the first position and the second contact plate in the second position. It is provided with at least two second convex portions or second concave portions, and zero or one or more of the first convex portions or the first concave portions are common to the second convex portion or the second concave portion. The semiconductor device inspection apparatus according to any one of claims 1 to 4. When the first wafer chuck plate or the second wafer chuck plate is placed on the upper surface of the chuck stage at the first position or the second position, the first wafer chuck plate or the second wafer chuck is placed. 1. The described semiconductor device inspection device. The chuck stage comes into contact with the back surface of the wafer to be inspected existing on the first wafer chuck plate held in the first position, and the first lift pin for moving the wafer to be inspected up and down, and the second position. According to any one of claims 1 to 6, which has a second lift pin that comes into contact with the back surface of the wafer to be inspected and moves the wafer to be inspected up and down, which is held on the second wafer chuck plate. The described semiconductor device inspection device. Further, the control device includes a means for receiving input of information regarding the diameter of the wafer to be inspected, and the information regarding the diameter of the wafer and the plate holding first means or the plate holding second means. Based on the correspondence relationship and / or the storage device that stores the correspondence relationship between the information on the wafer diameter and the first lift pin or the second lift pin, and the information on the received wafer diameter and the stored correspondence relationship. The present invention comprises means for selectively operating either the plate holding first means or the plate holding second means, and / or either the first lift pin or the second lift pin. The semiconductor device inspection device according to any one of 1 to 7. A method for inspecting a semiconductor device, which is performed using the semiconductor device inspection apparatus according to any one of claims 1 to 8.
The process of recognizing the diameter of the wafer to be inspected next,
A process of determining whether the wafer chuck plate, the contact plate, and the inductance canceling bar need to be replaced based on the recognized wafer diameter.
When it is determined that replacement is required, the first wafer chuck plate and first contact plate, or the second wafer chuck plate and second contact plate are placed in the first position on the chuck stage or based on the recognized wafer diameter. The process of placing in the second position,
The step of activating either the plate-holding first means or the plate-holding second means based on the recognized wafer diameter,
When it is determined that replacement is necessary, either the first inductance canceling bar or the second inductance canceling bar is used as the contact part of the probe for the front electrode or the contact part of the probe for the back electrode based on the recognized diameter of the wafer. The process of connecting in the electrical connection path between the tester and the tester,
Inspection method for semiconductor devices including. The method for inspecting a semiconductor device according to claim 9, further comprising the step of operating either the first lift pin or the second lift pin based on the recognized wafer diameter.

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