JP7014244B2 - Interposer board - Google Patents

Description

The present invention relates to an image sensor module. In particular, the present invention relates to an image sensor module using a solid-state image sensor built in a portable electronic device or a tablet terminal.

A solid-state image sensor is widely known as an image sensor built into a portable electronic device or a tablet terminal. The solid-state image sensor has a light receiving surface in which pixels having a photoelectric conversion element are arranged on a semiconductor chip or the like. When the light emitted by the subject is imaged on the light receiving surface by an optical system such as a lens, the light of the image is converted into an amount of electric charge according to the brightness and darkness, and an output image can be obtained by acquiring an electric signal. can.

In recent years, mobile electronic devices have become smaller, higher in quality, and more sophisticated, and solid-state image sensors mounted on these electronic devices are also strongly required to be smaller, higher in quality, and higher in accuracy. There is.

For example, Patent Document 1 describes a solid-state image sensor mounted on a substrate, a bonding wire for electrically connecting a pad formed on the solid-state image sensor and a lead formed on the substrate, and a side portion of the solid-state image sensor. It includes a frame-shaped frame member that surrounds the frame member and an optical member that has light transmission and is attached to the frame member so as to face the image pickup surface of the solid-state image sensor, and the frame member extends from the optical member side toward the image pickup surface. Disclosed is a solid-state image sensor in which a frame member and a solid-state image sensor are integrally fixed with a leg portion and an end portion of a bonding wire connected to a pad covered with the leg portion.

Japanese Unexamined Patent Publication No. 2012-22546

In order to form a subject image on the same focal plane over the entire light receiving surface of the solid-state image sensor, it is necessary that the optical axis of the lens group of the lens unit and the normal line of the solid-state image sensor match. However, in the above configuration, the same substrate is used as the mounting reference surface of the lens unit and the solid-state image sensor, but the flatness of the substrate is not mentioned. When a glass epoxy substrate is used as the substrate, for example, in consideration of the flatness of the surface, the accuracy of the parallelism of the light receiving surface of the semiconductor chip, which is a solid-state image sensor bonded and fixed to the substrate, is ensured, and the lens unit is used. At the time of fixing, a complicated process is required to secure the accuracy of the optical axis verticality of the lens system based on the substrate surface and assemble it, and the optical axis of the lens group of the lens unit and the normal line of the solid-state image sensor deviate from each other. Is a concern.

In view of the above circumstances, it is an object of the present invention to provide a structure of an image sensor module that enables easy and highly accurate assembly of an optical system.

The image sensor module according to an embodiment of the present invention is fixedly arranged on an interposer substrate having a plurality of through holes and a lighting unit and fixed to the first surface side of the interposer substrate, exposed by the lighting unit, and has a plurality of photoelectric conversions. An image sensor that has a light receiving surface on which elements are placed and is connected to an external circuit via a plurality of through holes, and a lens that is fixedly arranged on the second surface side opposite to the first surface of the interposer substrate. Equipped with a unit.

By having such a configuration, it is possible to match the normal of the light receiving surface of the image sensor with the optical axis of the image pickup lens group arranged in the lens unit with high accuracy.

The lens unit has at least three struts, each of which is characterized by being inserted into any of a plurality of through holes.

By having such a configuration, the lens unit can be stably fixed to the interposer substrate, and the mechanical strength of the image sensor module is improved.

The lens unit includes an image pickup lens group, an image pickup lens interior case in which the image pickup lens group is fixedly mounted, and an image pickup lens outer case in which the image pickup lens interior case is housed via a plurality of springs, and at least three columns are provided. It is characterized in that it is fixed to the outer case of the image pickup lens.

By having such a configuration, it is possible to match the normal of the light receiving surface of the image sensor with the optical axis of the image pickup lens group with high accuracy.

The image pickup lens inner case is surrounded by a coil, and at least two of the three columns are conductive, and each of them is connected to both ends of the coil.

By having such a configuration, the support column can also serve as wiring connected to the coil, and the wiring structure is simplified.

The through hole into which at least two struts are inserted is characterized by having a conformal conductor.

By having such a configuration, the connection between the coil and the external wiring can be improved.

The interposer substrate is translucent, and the lens unit is characterized by having a light-shielding portion that covers the side wall of the lighting portion.

By having such a configuration, it is possible to suppress the intrusion of light into the interposer substrate and suppress the generation of flare.

The interposer substrate is translucent and further includes a light absorption layer formed on the surface and side surfaces of the interposer substrate and the side walls of the plurality of through holes.

By having such a configuration, it is possible to suppress the intrusion of light into the interposer substrate and suppress the generation of flare.

The light absorption layer is a metal having a light-shielding property.

By having such a configuration, it is possible to suppress the intrusion of light into the interposer substrate and suppress the generation of flare.

The light absorption layer is a black resin.

By having such a configuration, it is possible to suppress the intrusion of light into the interposer substrate and suppress the generation of flare.

The interposer substrate is characterized by being composed of a silicon substrate.
By having such a configuration, since light does not enter the interposer substrate, flare does not occur.

Of the plurality of through holes, the through holes connected to the image sensor are provided, and the end portion on the first surface side further includes a plurality of through electrodes located on the same plane parallel to the second surface, and is an interposer substrate. The first surface of the above is characterized in that it is located on the second surface side with respect to the same plane.

By having such a configuration, the image sensor and the interposer substrate are arranged in parallel with high accuracy, and the alignment of the two in the manufacturing process becomes easy.

The interposer substrate is characterized by having a convex portion surrounding the side wall of the plurality of through electrodes on the second surface side.

By having such a configuration, the image sensor and the interposer substrate are arranged in parallel with high accuracy, and the alignment of the two in the manufacturing process becomes easy.

According to the present invention, it is possible to provide a structure of an image sensor module that enables easy and highly accurate assembly of an optical system.

It is sectional drawing explaining the structure of the image sensor module which concerns on one Embodiment of this invention. It is an exploded sectional view explaining the structure of the image sensor module which concerns on one Embodiment of this invention. It is a perspective view explaining the structure of the interposer substrate which concerns on one Embodiment of this invention. It is a top view explaining the structure of the interposer substrate which concerns on one Embodiment of this invention. It is sectional drawing explaining the interposer board part of the image sensor module which concerns on one Embodiment of this invention. It is sectional drawing explaining the structure of the image sensor module which concerns on one Embodiment of this invention. It is a perspective view explaining the structure of the interposer substrate which concerns on one Embodiment of this invention. It is sectional drawing explaining the structure of the image sensor module which concerns on one Embodiment of this invention. It is sectional drawing explaining the structure of the image sensor module which concerns on one Embodiment of this invention. It is sectional drawing explaining the interposer board part of the image sensor module which concerns on one Embodiment of this invention. It is sectional drawing explaining the structure of the image sensor module which concerns on one Embodiment of this invention. It is sectional drawing explaining the interposer board part of the image sensor module which concerns on one Embodiment of this invention. It is a figure which shows the example of the application product which can mount the image sensor module which concerns on embodiment of this invention.

Hereinafter, the configuration of the image sensor module 100 and the manufacturing method thereof according to the embodiment of the present invention will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present invention, and the present invention is not limited to these embodiments. In the drawings referred to in the present embodiment, the same parts or parts having similar functions are designated by the same reference numerals or similar reference numerals, and the repeated description thereof may be omitted. Further, the dimensional ratio of the drawing may differ from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

<First Embodiment>
The configuration of the image sensor module 100 according to the present embodiment will be described in detail with reference to FIGS. 1 to 5. FIG. 1 is a cross-sectional view illustrating the configuration of the image sensor module 100 according to the present embodiment. Further, FIG. 2 is an exploded cross-sectional view illustrating the configuration of the image sensor module 100 according to the present embodiment.

The image sensor module 100 according to the present embodiment includes at least an interposer substrate 102, an image sensor 104, and a lens unit 106. The image sensor module 100 according to the present embodiment may further include a heat radiating member 134, a module exterior case 136, a metal cover 138, and a permanent magnet 140.

The interposer substrate 102 has a plurality of through holes 108 and 109 and a lighting unit 102c. The image sensor 104 has a light receiving surface 104a fixed and arranged on the first surface 102a side of the interposer substrate 102, exposed by the lighting unit 102c, and a plurality of photoelectric conversion elements are arranged, and has a plurality of through holes 108. It is connected to an external circuit via. The lens unit 106 is fixedly arranged on the second surface 102b side opposite to the first surface 102a of the interposer substrate 102.

By having such a configuration, the normal line of the light receiving surface 104a of the image sensor 104 and the optical axis of the image pickup lens group 120 arranged in the lens unit 106 can be aligned with high accuracy.

If the normal of the light receiving surface 104a of the image sensor 104 and the optical axis of the image pickup lens group 120 do not match, the image of the subject is well imaged near the center of the effective light receiving surface 104a of the image sensor 104, for example. Even if this is done, there is a concern that display defects may occur, such as the inability to form a good image in a region away from the center of the effective light receiving surface.

The heat radiating member 134 is fixedly arranged on the surface opposite to the light receiving surface 104a of the image sensor 104. The module exterior case 136 has a recess, and at least the image sensor 104 and the heat radiating member 134 are arranged in the recess, and are fixedly arranged on the interposer substrate 102. The permanent magnet 140 is fixedly arranged inside the metal cover 138, and the lens unit 106 is housed therein.

FIG. 3 is a perspective view illustrating the configuration of the interposer substrate 102 according to the present embodiment. Further, FIG. 4 is a plan view illustrating the configuration of the interposer substrate 102 according to the present embodiment.

In order to match the normal of the light receiving surface 104a of the image sensor 104 with the optical axis of the image pickup lens group 120 arranged in the lens unit 106 with high accuracy, the interposer substrate 102 has a high surface flatness and both. It is desirable to use a substrate with high surface parallelism. The interposer substrate 102 may be a substrate having translucency or a substrate having no translucency.

As the substrate having translucency, for example, a glass substrate can be used. As the glass substrate, for example, quartz glass, non-alkali glass, borosilicate glass, aluminum silicate glass, soda glass, titanium-containing silicate glass and the like can be used.

As the substrate having no translucency, for example, a semiconductor substrate such as a silicon (Si) substrate, a silicon carbide (SiC) substrate, or a gallium arsenide (GaAs) substrate can be used. As the substrate having no translucency, a resin substrate obtained by processing an epoxy resin, a phenol resin, a polyester, a polyimide, or the like without translucency can be used. As the substrate having no translucency, a fiber-reinforced resin such as a glass fiber-reinforced epoxy resin or an aramid fiber-reinforced epoxy resin can be further used.

In this embodiment, a glass substrate is used. This makes it possible to provide the image sensor module 100 at a lower cost than when a silicon substrate is used.

Through electrodes 110 are formed in a part of the plurality of through holes 108 of the interposer substrate 102. Further, it has a lighting unit 102c that opens a region in which the light receiving surface 104a of the image sensor 104 is arranged in a plan view. In the present embodiment, a part of the through holes 108 and 109 is arranged around the light receiving surface 104a of the image sensor 104, and the through electrode 110 is formed in the part 108 of the through hole. Further, through holes 109 are also provided near the four corners of the interposer substrate 102. These through holes 109 are used for inserting the support column 118 of the lens unit 106, which will be described later, and fixing the lens unit 106 to the interposer substrate 102. Further, as will be described later, the number of through holes 109 for inserting the support columns 118 is not limited to four, and at least three may be arranged.

FIG. 5 is a cross-sectional view illustrating the interposer substrate 102 portion of the image sensor module 100 according to the present embodiment. In particular, when the interposer substrate 102 has translucency, the light absorption layer 112 formed on the surface and side surfaces of the interposer substrate 102 and the side walls of the plurality of through holes 108 and 109 and exposes the light receiving surface 104a of the image sensor 104. May be further provided. Here, the surface and side surfaces of the interposer substrate 102 include the side wall of the lighting unit 102c. In other words, the light absorption layer 112 arranged on all the surfaces and side surfaces of the interposer substrate 102 may be further provided. Metals such as the plurality of through electrodes 110 and the wiring 142 arranged on both sides of the interposer substrate 102 are not arranged in contact with the translucent interposer substrate 102, and are not arranged in contact with the interposer substrate 102, and are arranged via the light absorption layer 112 of the interposer substrate. It will be placed at 102. That is, in the manufacturing process, after forming the light absorption layer 112 that covers the entire surface of the interposer substrate 102, the through electrodes 110 and the wiring 142 are formed on the light absorption layer 112.

By having such a configuration, it is possible to suppress the intrusion of light into the interposer substrate 102 and to suppress the occurrence of flare. If the light absorption layer 112 is not provided, there is a concern that light may enter the interposer substrate 102, and in that case, the metal such as the through electrode 110 and the wiring 142 may diffusely reflect the light to cause stray light, and there is a concern that flare may occur.

An example of the material of the light absorption layer 112 is a metal having a light-shielding property. As the metal, for example, nickel (Ni), lead (Pb), gold (Au), copper (Cu) and the like can be used.

An example of a method for forming the light absorption layer 112 using the metal having a light-shielding property as described above will be described. First, through holes 108 and 109 arranged in each of the interposer boards 102 and a lighting unit 102c are formed on the board from which the plurality of interposer boards 102 are cut out.

As a method for forming the through hole 108, laser irradiation, wet etching, dry etching or the like can be used. As the laser irradiation, an excima laser, an Nd: YAG laser (a fundamental wave (wavelength: 1064 nm), a second harmonic (wavelength: 532 nm), a third harmonic (wavelength: 355 nm), etc. can be used), femto. A second laser or the like can be used. As the wet etching, wet etching using hydrogen fluoride (HF) or the like can be used. Further, the above-mentioned laser irradiation and wet etching can be appropriately combined. As the dry etching, dry etching using plasma, a DRIE (Deep Reactive Ion Etching) method using a Bosch process, or the like can be used.

Then, it is individualized into each interposer substrate 102 by dicing. Next, the catalyst is adsorbed on the individualized interposer substrate 102 as a pretreatment step of the electroless plating method. Then, it is immersed in a predetermined plating solution to form a metal film. Then, it is immersed in a resist stripping solution and run with running water. By the above steps, the light absorption layer 112 using a metal having a light-shielding property can be formed.

Another example of the material of the light absorption layer 112 is black resin.

The black resin contains at least a photosensitive resin composition, a photopolymerization initiator, a pigment and a solvent, and these compositions are appropriately combined to form a black resin composition. As the photosensitive resin composition, a negative type photosensitive resin composition can be used. Further, as the photosensitive resin composition, for example, a photosensitive resin composition containing an acrylic monomer, an oligomer, and a polymer can be used. As the pigment, carbon black, titanium black such as titanium oxide or titanium oxynitride, a metal oxide such as iron oxide, or other mixed organic pigments can be used.

Further, as the black resin, a non-photosensitive resin composition in which a pigment is dispersed can be used. As the non-photosensitive resin composition, for example, a polyimide resin can be used. As the pigment, a pigment in which carbon black is dispersed can be used. Further, aniline black, acetylene black, phthalocyanine black, titanium black and the like may be dispersed as pigments.

An example of a method for forming the light absorption layer 112 using a black resin will be described. First, through holes 108 and 109 arranged in each of the interposer boards 102 and a lighting unit 102c are formed on the board from which the plurality of interposer boards 102 are cut out. Then, it is individualized into each interposer substrate 102 by dicing. Next, the individualized interposer substrate 102 is immersed in a black resin to make it black. Then, it is immersed in a stripping solution to remove the protective layer. By the above steps, the light absorption layer 112 using the black resin can be formed.

After the light absorption layer 112 is formed, a through electrode 110 that conducts both sides of the interposer substrate 102 through the through hole 108 is formed. As the forming of the through electrode 110, for example, a method such as filling plating, sputtering or vapor deposition, and conformal plating can be used.

In the filling plating, a seed layer is formed on one surface of the interposer substrate 102, and a plating layer is grown on the seed layer by an electrolytic plating method. At this time, after forming a plugging plating layer (cover plating) on the one surface, the through hole 10 is directed from the one surface to the other surface.
The plating layer to be filled with 8 is grown.

By spatter rig or thin film deposition, a metal layer can be formed on the side wall of the through hole 108. At this time, if these treatments are performed from both sides of the interposer substrate 102, the through electrodes 110 can be formed even in the through holes 108 having a large aspect ratio as compared with the treatment of only one side. Further, a metal layer can be formed on the side wall of the through hole 108 by the electroless plating method.

In conformal plating, a metal layer formed on the side wall of the through hole 108 by the above-mentioned sputtering or vapor deposition is used as a seed layer, and a plating layer is grown on the metal layer by an electrolytic plating method.

Since the through electrode 110 formed by conformal plating has a hollow inside of the through hole 108, the through hole 108 may be filled with a resin or the like.

In the present embodiment, the plurality of through electrodes 110 are connected to the wiring 142 of the image sensor 104 via the solder balls 116 arranged at the end of the first surface 102a of the interposer substrate 102. That is, the image sensor 104 is flip-chip connected to the interposer board 102.

The lens unit 106 may have at least three columns 118. Each of the at least three columns 118 may be inserted into any of the plurality of through holes 109.

By having such a configuration, the lens unit 106 can be stably fixed to the interposer substrate 102, and the mechanical strength of the image sensor module 100 is improved. If the number of columns 118 is two or less, the lens unit 106 cannot be stably fixed with the second surface 102b of the interposer substrate 102 as a reference surface, and the mechanical strength is inferior.

Further, the lens unit 106 may include an image pickup lens group 120, an image pickup lens inner case 122, an image pickup lens outer case 124, a transparent resin substrate 126, and an infrared filter 128.

The image pickup lens interior case 122 is internally embedded with the image pickup lens group 120 fixed. Further, the image pickup lens inner case 122 is surrounded by the coil 130. The coil 130 is provided to control the position of the image pickup lens group 120. By controlling the current supplied to the coil 130, the position of the image pickup lens group 120 is controlled by the interaction between the magnetic field induced by the current and the permanent magnet 140. At least two of the at least three columns 118 are conductive, and each is connected to both ends of the coil 130.

By having such a configuration, the support column 118 can also serve as wiring connected to the coil 130, and the wiring structure is simplified.

The through hole 109 into which at least two columns 118 are inserted may have a conformal conductor. The conformal conductor is a through electrode 110 formed on the side wall of the through hole 109, and the inside of the through hole 109 is hollow. The columns 118 are inserted into the plurality of hollow through holes 109.

By having such a configuration, the connection between the coil 130 and the external wiring can be improved.

The image pickup lens outer case 124 contains the image pickup lens inner case 122 via a plurality of springs 132. That is, the image pickup lens inner case 122 is connected to and arranged with the image pickup lens inner case 122 via the spring 132. As a result, the image pickup lens inner case 122 is arranged so as to be swingable by controlling the current supplied to the coil 130. At least three columns 118 may be fixed to the image pickup lens outer case 124.

In the present embodiment, the infrared filter 128 is arranged in the lens unit 106, and is fixedly arranged in the lower part of the image pickup lens group 120. However, the arrangement of the infrared filter 128 is not limited to this. That is, the light from the subject may pass through the image pickup lens group 120 and then pass through the infrared filter 128. As another example, it may be fixedly arranged on the first surface 102a side of the interposer substrate 102.

The configuration of the image sensor module 100 according to the present embodiment has been described above. In the image sensor module 100 according to the present embodiment, the image sensor 104 and the lens unit 106 are both fixedly arranged with the interposer substrate 102 as a mounting reference surface.

That is, the image sensor module 100 according to the present embodiment has the above configuration, so that the normal of the light receiving surface 104a of the image sensor 104 and the optical axis of the image pickup lens group 120 are aligned with high accuracy. Can be done. Therefore, it is possible to control the image of the subject to be uniformly imaged over the entire effective light receiving surface 104a of the image sensor 104.

If the normal of the light receiving surface 104a of the image sensor 104 and the optical axis of the image pickup lens group 120 do not match, the image of the subject is well imaged near the center of the effective light receiving surface 104a of the image sensor 104, for example. Even so, there is a concern that display defects such as poor image formation may occur in a region away from the center of the effective light receiving surface 104a.

<Second Embodiment>
The configuration of the image sensor module 200 according to the present embodiment will be described in detail with reference to FIGS. 6 and 7. FIG. 6 is a cross-sectional view illustrating the configuration of the image sensor module 200 according to the present embodiment. The image sensor module 200 according to the present embodiment differs from the image sensor module 100 according to the first embodiment only in the configuration of the interposer board 102 portion. FIG. 7 is a perspective view illustrating an interposer board 102 portion of the image sensor module 200 according to the present embodiment.

The interposer substrate 102 included in the image sensor module 200 according to the present embodiment uses a substrate having no translucency, and is different from the image sensor module 100 according to the first embodiment in that a silicon substrate is used.

By having such a configuration, since light does not enter the interposer substrate 102, flare does not occur.

When a translucent substrate is used as the interposer substrate 102, there is a concern that light may enter the interposer substrate 102. In that case, the metal such as the through electrode 110 and the wiring 142 diffusely reflects the light to cause stray light, resulting in flare. There is a concern that it will occur. To solve such a problem, the image sensor module 100 according to the first embodiment is provided with a light absorption layer 112.

However, in the image sensor module 200 according to the present embodiment, it is not necessary to form the light absorption layer 112, which simplifies the manufacturing process.

<Third Embodiment>
The configuration of the image sensor module 300 according to the present embodiment will be described in detail with reference to FIG. FIG. 8 is an overall cross-sectional view illustrating the image sensor module 300 according to the present embodiment.

The image sensor module 300 according to the present embodiment differs from the image sensor module 100 according to the first embodiment only in the configuration of the lens unit 106. The lens unit 106 included in the image sensor module 300 according to the present embodiment is different from the image sensor module 100 according to the first embodiment in that it has a light shielding portion 146 that covers the side wall of the lighting unit 102c. The light-shielding portion 146 extends from the image pickup lens outer case 124 of the lens unit 106 and is arranged so as to fit into the lighting portion 102c of the interposer substrate 102. Further, the light absorption layer 112 formed on the interposer substrate 102 may or may not be provided, but it is not provided in the present embodiment.

By having such a configuration, it is possible to suppress the intrusion of light into the interposer substrate 102 and to suppress the occurrence of flare. Further, it is not necessary to form the light absorption layer 112, which simplifies the manufacturing process. If the light-shielding portion 146 is not provided, there is a concern that light may enter the interposer substrate 102, and in that case, the metal such as the through electrode 110 and the wiring 142 may diffusely reflect the light to cause stray light, which may cause flare.

<Fourth Embodiment>
The configuration of the image sensor module 400 according to the present embodiment will be described in detail with reference to FIGS. 9 and 10. FIG. 9 is a cross-sectional view illustrating the configuration of the image sensor module 400 according to the present embodiment. The image sensor module 400 according to the present embodiment differs from the image sensor module 100 according to the first embodiment only in the configuration of the interposer board 102 portion. FIG. 10 is a cross-sectional view illustrating the interposer substrate 102 portion of the image sensor module 400 according to the present embodiment.

The image sensor module 400 according to the present embodiment is provided in the through hole 108 connected to the image sensor 104 among the plurality of through holes 108 and 109, and the end portion on the first surface 102a side is the second surface 102b. A plurality of through electrodes 110 located on the same plane in parallel are provided, and the first surface 102a of the interposer substrate 102 is located on the second surface 102b side with respect to the same plane.

In other words, the image sensor module 400 according to the present embodiment is provided in the through hole 108 connected to the image sensor 104 among the plurality of through holes 108 and 109, and the end portion on the first surface 102a side is an interposer substrate. A plurality of through electrodes 110 projecting from 102 and located on the same plane parallel to the second surface 102b are provided.

That is, in the flip-chip connection between the interposer board 102 and the image sensor 104, both are connected only by a plurality of protruding through electrodes, and the first surface 102a of the interposer board 102 and the image sensor 104 do not come into contact with each other.

By having such a configuration, the image sensor 104 and the interposer substrate 102 are arranged in parallel with high accuracy, and the alignment of the two in the manufacturing process becomes easy.

In the case of connection between surfaces, for example, if an air layer or the like is generated between the two in the connection process, control for alignment becomes difficult and there is a concern that the yield may decrease.

An example of a method for forming the through silicon via 110 included in the image sensor module 400 according to the present embodiment will be described. First, the light absorption layer 112 is formed at least on the side walls of the through holes 108 and 109 by using the method described above. Here, it is desirable that the through electrode 110 is formed so that the end portion thereof is filled up to the open end of the through hole 108 and the interposer substrate 102 on which the through electrode 110 is formed is as flat as possible. Next, the through electrode 110 is protected only on the first surface 102a of the interposer substrate 102, and only the interposer substrate 102 is thinned by etching.

Through the above steps, the through silicon via 110 included in the image sensor module 400 according to the present embodiment can be formed. As a result, the flatness of the first surface 102a of the interposer substrate 102 deteriorates, but the ends of the plurality of through electrodes 110 involved in the connection with the image sensor 104 are maintained on the same plane. According to this method, the solder ball 116 used for the flip chip connection is not required. Further, since the through silicon via 110 is self-aligned without the need for patterning using a photomask or the like, the manufacturing process is simplified.

Although the description has been given while comparing with the image sensor module 100 according to the first embodiment, the interposer substrate 102 is not limited to the glass substrate, and a silicon substrate may be used as in the second embodiment. Further, the image sensor module 400 according to the present embodiment can be combined with the image sensor module 300 according to the third embodiment having the light-shielding portion 146.

<Fifth Embodiment>
The configuration of the image sensor module 500 according to the present embodiment will be described in detail with reference to FIGS. 11 and 12. FIG. 11 is a cross-sectional view illustrating the configuration of the image sensor module 500 according to the present embodiment. The image sensor module 500 according to the present embodiment differs from the image sensor module 400 according to the fourth embodiment only in the configuration of the interposer board 102 portion. FIG. 12 is a cross-sectional view illustrating the interposer substrate 102 portion of the image sensor module 500 according to the present embodiment.

In the image sensor module 500 according to the present embodiment, the interposer substrate 102 has a convex portion surrounding the side walls of the plurality of through electrodes 110 on the first surface 102a side, and the image sensor according to the fourth embodiment has a convex portion. It is different from the module 400.

In other words, of the plurality of through holes 108 and 109, the end portion provided in the through hole 108 connected to the image sensor 104 on the first surface 102a side is located on the same plane parallel to the second surface 102b. A region of the first surface 102a of the interposer substrate 102 further provided with the plurality of through electrodes 110 and separated from the opening ends of the plurality of through holes 108 by a predetermined distance is the second surface of the same plane. It differs in that it is located on the 102b side.

That is, in the flip-chip connection between the interposer board 102 and the image sensor 104, both are connected via only a plurality of protruding through electrodes, and the first surface 102a of the interposer board 102 and the image sensor 104 do not come into contact with each other.

By having such a configuration, the image sensor 104 and the interposer substrate 102 are arranged in parallel with high accuracy, and the alignment of the two in the manufacturing process becomes easy. Further, since the side wall of the through electrode 110 is protected by the interposer substrate 102, the mechanical strength of the interposer substrate 102 on which the through electrode 110 is formed is improved.

In the case of connection between surfaces, for example, if an air layer or the like is generated between the two in the connection process, control for alignment becomes difficult and there is a concern that the yield may decrease.

An example of a method for forming the through silicon via 110 included in the image sensor module 500 according to the present embodiment will be described. First, the light absorption layer 112 is formed at least on the side walls of the through holes 108 and 109 by using the method described above. Here, it is desirable that the through electrode 110 is formed so that the end portion thereof is filled up to the open end of the through hole 108 and the interposer substrate 102 on which the through electrode 110 is formed is as flat as possible. Next, a resist that protects the through electrode 110 and its peripheral portion is formed only on the first surface 102a of the interposer substrate 102, and is thinned by etching.

Through the above steps, the through silicon via 110 included in the image sensor module 500 according to the present embodiment can be formed. As a result, the flatness of the first surface 102a of the interposer substrate 102 deteriorates, but the ends of the plurality of through electrodes 110 involved in the connection with the image sensor 104 are maintained on the same plane. A region of the interposer substrate 102 that is protected without being etched in the peripheral region of the through hole 108 also exists on the same plane. According to this method, the solder ball 116 used for the flip chip connection is not required. Further, since the side wall of the through electrode 110 is protected by the interposer substrate 102, the mechanical strength of the interposer substrate 102 on which the through electrode 110 is formed is improved.

Although the description has been given while comparing with the image sensor module 400 according to the fourth embodiment, the interposer substrate 102 is not limited to the glass substrate, and a silicon substrate may be used as in the second embodiment. Further, the image sensor module 500 according to the present embodiment can be combined with the image sensor module 300 according to the third embodiment having the light-shielding portion 146.

FIG. 13 is a diagram showing an example of an applied product on which the image sensor module according to the embodiment of the present invention can be mounted. The image sensor modules 100 to 500 manufactured as described above are mounted on various application products. For example, it is installed in a notebook personal computer 1000, a tablet terminal 2000, a mobile phone 3000, a smartphone 4000, a digital video camera 5000, a digital camera 6000, and the like.

The present invention is not limited to the above embodiment, and can be appropriately modified without departing from the spirit.

100, 200, 300, 400, 500: Image sensor module 102: Interposer substrate 102a: First surface 102b: Second surface 102c: Light collection unit 104: Image sensor 106: Lens unit 108, 109: Through hole 110: Through electrode 112 : Light absorption layer 116: Solder ball 118: Support 120: Image pickup lens group 122: Image pickup lens inner case 124: Image pickup lens outer case 126: Transparent resin substrate 128: Infrared filter 130: Coil 132: Spring 134: Heat dissipation member 136: Module Exterior case 138: Metal cover 140: Permanent magnet 142: Wiring 144: FPC
146: Shading part 1000: Notebook type personal computer 2000: Tablet terminal 3000: Mobile phone 4000: Smartphone 5000: Digital video camera 6000: Digital camera

Claims (6)

An interposer substrate that is arranged between the lens unit and the image sensor and fixes the lens unit and the image sensor.
With the board
A plurality of first through holes penetrating the substrate,
A plurality of second through holes penetrating the substrate into which the support columns provided in the lens unit are inserted, and
The substrate includes a translucent portion in which the substrate is opened, and the substrate is included.
A light absorption layer is provided on the surface of the substrate, and the light absorption layer is provided.
The light absorption layer is a black resin and is
A first electrode to be connected to the image sensor is provided in the plurality of first through holes.
An interposer substrate provided with a second electrode so as to have a hollow in the plurality of second through holes . The interposer substrate according to claim 1 , wherein the light absorbing layer is provided on the side surface of the plurality of first through holes and the side surface of the translucent portion. The interposer substrate according to claim 1, wherein the substrate has translucency. The interposer substrate according to claim 1, wherein the substrate does not have translucency. The interposer substrate according to claim 1 , wherein the plurality of second through holes are provided outside the plurality of first through holes. The interposer substrate according to claim 1 , wherein the second electrode is a conformal conductor.

Images