JP7029965B2 - Communication method of board processing device and board processing device - Google Patents

Description

Various aspects and embodiments of the present invention relate to a communication method of a substrate processing apparatus and a substrate processing apparatus.

Conventionally, a substrate processing apparatus for processing a substrate such as a semiconductor wafer has been known. As such a substrate processing apparatus, for example, a plasma processing apparatus is known.

By the way, the substrate processing apparatus monitors whether or not an abnormality has occurred in the apparatus itself or the substrate. For example, in a board processing device, the state of the device itself or the board is sampled by various sensors, and the sampled data is transmitted to a controller that controls the device by data communication. The controller monitors whether or not an abnormality has occurred in the device or the board based on the sampling data received by the data communication. In such data communication, for example, there is a remote I / O in which a communication unit on the sensor side and a communication unit on the controller side periodically perform data communication.

In such data communication, there is a conventional technique for preventing duplicate capture and data omission of the same data (for example, Patent Document 1). For example, in the conventional technology, when the remote slave station and the remote master station perform data communication, the data on the remote slave station side is notified by notifying the remote slave station that the data has been fetched by the remote master station. Updates can be done at the right time. For example, the remote slave station updates the data to be transmitted and transmits the data to the remote master station at the communication timing (first communication). The remote master station transmits a reception trigger notifying the remote slave station that data has been acquired at the next communication timing (second communication). After receiving the reception trigger, the remote slave station updates the data to be transmitted and transmits the data to the remote master station at the next communication timing (first communication). In Patent Document 1, the first communication and the second communication are alternately performed at each communication timing in this way to prevent duplicate capture and data omission of the same data.

Japanese Unexamined Patent Publication No. 11-338518

However, in the prior art, the transmission data is updated alternately one by one for each cycle of communication, and two cycles of communication are required for each data acquisition.

In the communication method of the substrate processing apparatus disclosed, in one embodiment, the first communication unit and the second communication unit perform data communication at periodic communication timings. The first communication unit stores the data to be transmitted in the storage unit. The first communication unit transfers the first data including the data stored in the first flag and the storage unit, which are in any of two or more states, to the second communication unit at the communication timing. Send. In the first communication unit, the state of the second flag, which is one of two or more states included in the second data received from the second communication unit, is the state of the previous data communication. When changed from, the state of the first flag is changed to a state different from the state of the previous data communication, and the data stored in the storage unit is erased. The second communication unit is included in the first data when the state of the first flag included in the first data received from the first communication unit is changed from the state of the previous data communication. While fetching data, the state of the second flag is changed to a state different from the state of the previous data communication. The second communication unit transmits the second data including the second flag to the first communication unit at the communication timing.

According to one aspect of the communication method of the substrate processing apparatus disclosed, there is an effect that data can be transmitted from the first communication unit to the second communication unit at each communication timing.

FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to an embodiment. FIG. 2 is a block diagram schematically showing a configuration for performing data communication. FIG. 3 is a diagram schematically showing data stored in the memory on the slave side. FIG. 4 is a diagram schematically showing data stored in the memory on the master side. FIG. 5 is a timing chart illustrating the flow of data communication.

Hereinafter, the communication method of the substrate processing apparatus disclosed in the present application and the embodiment of the substrate processing apparatus will be described in detail with reference to the drawings. In addition, the same reference numerals are given to the same or corresponding parts in each drawing. Further, the invention disclosed by the present embodiment is not limited. Each embodiment can be appropriately combined as long as the processing contents do not contradict each other.

[Device configuration]
The substrate processing apparatus is an apparatus that performs predetermined substrate processing on a substrate. As such a substrate processing apparatus, for example, a plasma processing apparatus is known. In the present embodiment, a case where the substrate processing apparatus is a plasma processing apparatus that performs plasma etching on the substrate will be described as an example. The plasma processing apparatus is a system that performs plasma processing on an object to be processed such as a semiconductor wafer (hereinafter referred to as a wafer). In this embodiment, a case where plasma etching is performed as plasma processing will be described as an example. FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to an embodiment.

The plasma processing apparatus 1 has a cylindrical processing chamber 10 made of metal, for example, made of aluminum or stainless steel and having an electrically grounded closed structure. In the processing chamber 10, a cylindrical mounting table (lower electrode) 11 on which the wafer W as a substrate to be processed is placed is arranged. The mounting table 11 has a mounting table main body 12 made of a conductive material such as aluminum and an electrostatic chuck made of an insulating material such as Al2O3 for adsorbing a wafer W arranged on the mounting table main body 12. It is equipped with 13. The mounting table 11 and the electrostatic chuck 13 are joined by a joining layer 70. The mounting table main body 12 is supported by a cylindrical support portion 15 extending vertically upward from the bottom of the processing chamber 10 via an insulating material.

An exhaust passage 16 is formed between the side wall of the processing chamber 10 and the tubular support portion 15. An exhaust device 18 is connected to the bottom of the exhaust passage 16 via an exhaust pipe 17. The exhaust device 18 has a vacuum pump and decompresses the inside of the processing chamber 10 to a predetermined degree of vacuum. Further, the exhaust pipe 17 has an automatic pressure control valve 19 which is a variable butterfly valve, and the pressure in the processing chamber 10 is controlled by the automatic pressure control valve 19.

A high-frequency power supply 21 for applying a high-frequency voltage for plasma generation and ion attraction is electrically connected to the mounting table main body 12 via a matching unit 22 and a feeding rod 23. The high frequency power supply 21 applies a predetermined high frequency, for example, a high frequency power of 60 MHz to the mounting table 11. A plurality of high frequency power supplies 21 may be provided, and a plurality of high frequencies having different frequencies may be supplied to the mounting table 11. For example, a plurality of high frequency power supplies 21 may be provided, and high frequency power for plasma generation and high frequency power for drawing ions into the wafer W may be supplied to the mounting table 11.

A shower head 24 as a ground electrode is arranged on the ceiling of the processing chamber 10. A high frequency voltage is applied from the high frequency power supply 21 between the mounting table 11 and the shower head 24. The shower head 24 has an electrode plate 26 on the lower surface having a large number of gas vent holes 25, and an electrode support 27 that detachably supports the electrode plate 26. A buffer chamber 28 is provided inside the electrode support 27. A gas supply pipe 31 from the processing gas supply unit 30 is connected to the gas introduction port 29 of the buffer chamber 28.

Inside the mounting table main body 12, for example, an annular refrigerant chamber 35 arranged in the circumferential direction is provided. A refrigerant having a predetermined temperature, for example, cooling water, is circulated and supplied from the chiller unit 36 to the refrigerant chamber 35 via the pipes 37 and 38. As a result, the mounting table main body 12 is cooled to a predetermined temperature.

The electrostatic chuck 13 arranged on the upper part of the mounting table main body 12 has a predetermined thickness and is formed in a disk shape having a size corresponding to the wafer W. An electrode plate 40 made of a conductive material such as tungsten is embedded in the electrostatic chuck 13. A DC power supply 41 is electrically connected to the electrode plate 40. The electrostatic chuck 13 can adsorb and hold the wafer W by Coulomb force by applying a DC voltage from the DC power supply 41 to the electrode plate 40.

As described above, the heat of the mounting table main body 12 cooled to a predetermined temperature is transferred to the wafer W adsorbed on the upper surface of the electrostatic chuck 13 via the electrostatic chuck 13. From the first heat transfer gas supply unit 52 to the upper surface of the electrostatic chuck 13 via the first gas supply line 46 in order to efficiently transfer heat to the wafer W even if the inside of the processing chamber 10 is depressurized. A heat transfer gas such as He is supplied.

An annular focus ring 60 is arranged on the mounting table 11 so as to surround the electrostatic chuck 13. Further, a gate valve 63 for opening and closing the carry-in / outlet 62 of the wafer W is attached to the side wall of the processing chamber 10. Further, a magnet 64 extending in an annular shape or concentrically is arranged around the processing chamber 10.

Further, a through hole 65 is provided in the mounting table main body 12, the bonding layer 70, and the electrostatic chuck 13 constituting the mounting table 11. Inside the through hole 65, a pusher pin 66 electrically grounded via a resistor or an inductance is provided. Although one through hole 65 and one pusher pin 66 are shown in FIG. 1, three or more through holes 65 and pusher pins 66 are provided at equal intervals in the circumferential direction of the mounting table 11. The pusher pin 66 is connected to an expansion / contraction mechanism 67 that makes the processing chamber 10 airtight and expandable / contractible. The expansion / contraction mechanism 67 expands / contracts by the driving force of the drive motor 68, and moves the pusher pin 66 up and down. The pusher pin 66 transfers the wafer W from the transfer device in the load lock chamber, and moves up and down when the wafer W is brought into contact with and detached from the electrostatic chuck 13.

Here, the carry-in operation when the wafer W is delivered into the processing chamber 10 will be briefly described. The gate valve 63 opens, and the transfer device carries the wafer W into the processing chamber 10 from the carry-in outlet 62. Next, the pusher pin 66 rises through the through hole 65 to support the back surface of the wafer W and lift the wafer W from the transfer device. After that, the transport device returns to the load lock chamber from the carry-in outlet 62. The pusher pin 66 descends through the through hole 65. As a result, the wafer W is placed on the electrostatic chuck 13. Finally, when the gate valve 63 is closed, the wafer W is delivered into the processing chamber 10.

Next, the unloading operation when the wafer W is taken out from the processing chamber 10 will be briefly described. The wafer W is lifted from the electrostatic chuck 13 by raising the pusher pin 66 through the through hole 65. Next, the gate valve 63 opens, and the transfer device enters the processing chamber 10 from the carry-in outlet 62 and comes to the lower side of the wafer W supported on the pusher pin 66. Next, the pusher pin 66 descends through the through hole 65, and the wafer W is placed on the transfer device. After that, the transfer device returns to the load lock chamber from the carry-in outlet 62, and the wafer W is carried out from the chamber.

In the processing chamber 10 of the plasma processing apparatus, a horizontal magnetic field directed in one direction is formed by the magnet 64, and a vertical RF electric field is formed by a high frequency voltage applied between the mounting table 11 and the shower head 24. As a result, magnetron discharge is performed in the processing chamber 10 via the processing gas, and high-density plasma is generated from the processing gas in the vicinity of the surface of the mounting table 11.

The operation of the plasma processing device 1 configured as described above is collectively controlled by the control unit 80. The control unit 80 is, for example, a computer and controls each unit of the plasma processing device 1. The operation of the plasma processing device 1 is collectively controlled by the control unit 80.

By the way, the plasma processing apparatus 1 monitors whether or not an abnormality has occurred in the apparatus itself or the wafer W. For example, in the plasma processing device 1, the state of the device itself or the substrate is periodically sampled by various sensors, and the sampling data is transmitted to the control unit 80 that controls the device by data communication. The control unit 80 monitors whether or not an abnormality has occurred in the device or the board based on the sampling data received by the data communication.

For example, in the plasma processing device 1 according to the present embodiment, the drive motor 68 is provided with a sensor 68a for detecting the drive torque, and the sensor 68a samples the drive torque in the drive motor 68 at a cycle of 10 msec. In the plasma processing apparatus 1, data communication of sampling data is performed by remote I / O. The sampled drive torque sampling data is transmitted to the control unit 80 by data communication by remote I / O.

The control unit 80 monitors whether or not an unnecessary load is applied to the wafer W based on the received sampling data. For example, the control unit 80 determines that an unnecessary load is applied to the wafer W when the driving torque of a predetermined value or more is recorded in the sampling data when the wafer W is carried in and out.

As described above, the plasma processing apparatus 1 performs data communication of sampling data by remote I / O. The device net (DeviceNet), which is a connection method corresponding to remote I / O, supports networks such as branch-shaped branch bus connections and star-shaped connections using branch taps, and is connected to the network. This is a master-slave communication method in which the master communication unit and the slave communication unit perform data communication. The master communication unit can perform data communication with a plurality of slave communication units. This eliminates the need for the plasma processing device 1 to provide the control unit 80 with an interface for inputting / outputting data for each output source of various data such as the sensor 68a. As a result, the plasma processing device 1 can simplify the configuration of the interface of the control unit 80. Further, the plasma processing device 1 eliminates the need to directly connect the wiring from the output source of various data such as the sensor 68a to the control unit 80. Therefore, the plasma processing device 1 can arrange the control unit 80 at a position physically farther away. Further, it is possible to configure one control unit 80 to control a plurality of plasma processing devices 1.

[data communication]
Next, data communication of sampling data will be described. FIG. 2 is a block diagram schematically showing a configuration for performing data communication.

A slave communication unit 100 is connected to the sensor 68a. A master communication unit 101 is connected to the control unit 80. Sampling data indicating the drive torque of the drive motor 68 is input to the slave communication unit 100 from the sensor 68a at a cycle of 10 msec. The slave communication unit 100 and the master communication unit 101 are connected to the network 102 corresponding to the remote I / O, and perform data communication via the network 102 at periodic communication timings. For example, the slave communication unit 100 and the master communication unit 101 perform data communication at a cycle of 100 msec under the control of the master communication unit 101, and exchange data with each other. In the present embodiment, the slave communication unit 100 corresponds to the first communication unit of the present invention, and the master communication unit 101 corresponds to the second communication unit of the present invention. In FIG. 2, for simplification of the explanation, it is assumed that only the slave communication unit 100 and the master communication unit 101 are connected to the network 102, but the data communication unit that transmits the sampling data of other sensors, etc. Other communication units may be connected.

The slave communication unit 100 includes a memory 110, a communication unit 111, and a control unit 112.

The master communication unit 101 is also configured in the same manner as the slave communication unit 100, and has a memory 120, a communication unit 121, and a control unit 122. The master communication unit 101 may be realized by the control unit 80. That is, the control unit 80 may have the function of the master communication unit 101.

The memory 110 stores various data. For example, the memory 110 stores data to be transmitted to the master communication unit 101. For example, the memory 110 stores sampling data input from the sensor 68a. Further, the memory 110 stores the data received from the master communication unit 101.

FIG. 3 is a diagram schematically showing data stored in the memory on the slave side. FIG. 3 shows the data to be transmitted and the received data separately on the left and right. Each data shown in "slave OUT" on the left side is the data to be transmitted. Each data shown in "slave IN" on the right side is the data received from the master communication unit 101.

Sampling data is stored in the memory 110 as shown in the “slave OUT” on the left side. In the present embodiment, the sampling data is 16-bit data, and N sampling data of sampling data 1 to N are shown. Further, the memory 110 stores 1-bit CLKOUT and a 15-bit storage area for the number of sampled data stored and supplementary information. CLKOUT is a flag that can be changed into two states, "0" and "1". In this embodiment, CLKOUT corresponds to the first flag of the present invention. The supplementary information stores various information such as instruction information from the slave side to the master side and state information indicating the state of the slave side.

Further, in the memory 110, as shown in the “slave IN” on the right side, supplementary information is stored in the 1-bit CLKIN and the 15-bit storage area. CLKIN is a flag that can be changed into two states, "0" and "1". In this embodiment, CLKOUT corresponds to the second flag of the present invention. The supplementary information stores various information such as instruction information from the master side to the slave side and state information indicating the state of the master side.

Return to FIG. The communication unit 111 performs communication corresponding to the remote I / O. The communication unit 111 stores data to be transmitted from the first transmission data control unit 132, which will be described later. The communication unit 111 transmits the stored data to be transmitted to the communication unit 121 of the master communication unit 101 at periodic communication timings. Further, the communication unit 111 receives data from the communication unit 121 of the master communication unit 101 at periodic communication timings. The communication unit 111 stores the received data in the memory 110. For example, the communication unit 111 receives the data of the “slave IN” on the right side of FIG. 3 from the communication unit 121 of the master communication unit 101 and stores it in the memory 110. The data of the "slave IN" is received from the master communication unit 101 at each communication timing. When the data transmitted by the master communication unit 101 is changed, the data of the "slave IN" of the memory 110 reflects the change of the data at the communication timing.

The control unit 112 includes electronic circuits such as CPU (Central Processing Unit) and MPU (Micro Processing Unit), and integrated circuits such as PLC (Programmable Logic Controller), ASIC (Application Specific Integrated Circuit), and FPGA (Field Programmable Gate Array). The communication unit 111 controls the data to be transmitted and received. The control unit 112 has an internal memory for storing programs and control data that specify various processing procedures, and executes various processing by these. The control unit 112 functions as various processing units by operating various programs. For example, the control unit 112 has a storage unit 130, a first change unit 131, a first transmission data control unit 132, and an erasure unit 133. In the present embodiment, the memory 110 corresponds to the storage unit of the present invention, and the communication unit 111 corresponds to the transmission unit of the present invention.

The storage unit 130 stores the data to be transmitted in the memory 110. For example, the storage unit 130 sequentially stores the sampling data input from the sensor 68a in the memory 110 at a cycle of 10 msec. Further, the storage unit 130 updates the value of the number of data stored in the memory 110 to the number of sampling data currently stored in the memory 110.

The first changing unit 131 changes the state of the CLKOUT stored in the memory 110 to a different state at a timing corresponding to the communication timing. For example, the first change unit 131 periodically monitors the state of CLKIN. When the state of CLKIN changes, the first changing unit 131 changes the state of CLKOUT stored in the memory 110 to a different state. When the first transmission data control unit 132 or the erase unit 133 detects a change in the CLKIN state, the first change unit 131 changes the CLKOUT state stored in the memory 110 to a different state. May be good.

The first transmission data control unit 132 controls the data to be transmitted to the master communication unit 101. For example, the first transmission data control unit 132 stores the data to be transmitted in the communication unit 111 at a timing corresponding to the communication timing. For example, when the change of the CLKOUT state by the first change unit 131 is completed, the first transmission data control unit 132 has the CLKOUT and the number of stored CLKOUTs shown in the “slave OUT” of FIG. 3 by the next communication timing. , Supplementary information and sampling data are stored in the communication unit 111. For example, when the change of the CLKOUT state by the first change unit 131 is completed, the first transmission data control unit 132 transfers the CLKOUT, the number of stored data, the supplementary information, and the sampling data stored in the memory 110 to the communication unit 111. Store.

The erasing unit 133 erases the data to be transmitted stored in the memory 110 at a timing corresponding to the communication timing. For example, the erasing unit 133 erases the sampling data shown in the “slave OUT” of FIG. 3 from the memory 110 when the storage of the data to be transmitted by the first transmission data control unit 132 in the communication unit 111 is completed. do. For example, the erasing unit 133 erases the sampling data stored in the memory 110 when the storage of the data to be transmitted by the first transmission data control unit 132 in the communication unit 111 is completed.

The memory 120 of the master communication unit 101 stores various data. For example, the memory 120 stores data received from the slave communication unit 100. Further, the memory 120 stores data to be transmitted to the slave communication unit 100.

FIG. 4 is a diagram schematically showing data stored in the memory on the master side. FIG. 4 shows the data to be transmitted and the received data separately on the left and right. Each data shown in the "master IN" on the left side is the data received from the slave communication unit 100. The data of "master IN" is the same as the data of "slave OUT" in FIG. Each data shown in "master OUT" on the right side is the data to be transmitted. The data of "master OUT" is the same as the data of "slave IN" in FIG.

Return to FIG. The communication unit 121 performs communication corresponding to the remote I / O. The communication unit 121 stores data to be transmitted from the second transmission data control unit 141, which will be described later. The communication unit 121 transmits the stored data to be transmitted to the communication unit 111 at periodic communication timings. Further, the communication unit 121 receives data from the communication unit 111 at periodic communication timings. The communication unit 121 stores the received data in the memory 120. For example, the communication unit 121 receives the data of the “master IN” on the left side of FIG. 4 from the communication unit 111 of the slave communication unit 100 and stores it in the memory 120. The "master IN" data is received from the slave communication unit 100 at each communication timing. When the data transmitted by the slave communication unit 100 is changed, the data of the "master IN" of the memory 120 reflects the change of the data at the communication timing.

The control unit 122 has the same configuration as the control unit 112, and functions as various processing units by operating various programs. For example, the control unit 122 has an acquisition unit 140, a second transmission data control unit 141, and a second change unit 142.

The acquisition unit 140 acquires data received from the memory 120 at a timing corresponding to the communication timing. For example, the capture unit 140 periodically monitors the state of CLKOUT. When the state of CLKOUT changes, the acquisition unit 140 acquires the number of stored data, supplementary information, and each sampling data shown in the “master IN” of FIG. 4 from the memory 120. The acquisition unit 140 outputs the number of captured data, supplementary information, and each sampling data to the control unit 80.

As a result, each sampling data is transmitted to the control unit 80. The control unit 80 monitors whether or not an unnecessary load is applied to the wafer W based on the drive torque of the drive motor 68 indicated by each sampling data. For example, when the drive torque of a predetermined value or more is recorded, the control unit 80 determines that an unnecessary load is applied to the wafer W.

The second changing unit 142 changes the state of CLKIN stored in the memory 120 to a different state at a timing corresponding to the communication timing. For example, when the data acquisition by the acquisition unit 140 is completed, the second change unit 142 changes the state of the CLKIN stored in the memory 120 to a different state by the next communication timing. For example, the second change unit 142 changes the state of the CLKIN stored in the memory 120 to a different state when the data acquisition by the acquisition unit 140 is completed.

The second transmission data control unit 141 controls the data to be transmitted to the slave communication unit 100. For example, the second transmission data control unit 141 stores the data to be transmitted in the communication unit 121 at a timing corresponding to the communication timing. For example, when the second transmission data control unit 141 completes the change of the CLKIN state by the second change unit 142, the CLKIN and supplementary information shown in the “master OUT” of FIG. 4 are reached by the next communication timing. Is stored in the communication unit 121. For example, the second transmission data control unit 141 stores the CLKIN and supplementary information stored in the memory 120 in the communication unit 121 when the change of the CLKIN state by the second change unit 142 is completed.

Next, the flow of data communication will be described. FIG. 5 is a timing chart illustrating the flow of data communication. FIG. 5 shows the sampling period of the sampling data by the sensor 68a at the upper part. The sampling period is, for example, 10 msec.

Further, FIG. 5 shows the amount of sampling data stored in the memory 110 of the slave communication unit 100 and the states of CLKOUT and CLKIN stored in the memory 110 as the slave side. CLKOUT and CLKIN can be changed to two states, "0" and "1".

Further, FIG. 5 shows the timing of remote I / O communication and the states of CLKOUT and CLKIN stored in the memory 120 of the master communication unit 101 as the master side. The timing of remote I / O communication is the communication timing at which the communication unit 111 and the communication unit 121 communicate with each other. In the example of FIG. 5, communication timings T1, T2, and T3 are shown. The communication timing cycle is, for example, 100 msec.

In the example of FIG. 5, at first, the CLKIN on the slave side is in the “1” state, the CLKOUT on the slave side is in the “0” state, and the CLKOUT on the master side is in the “1” state. It is assumed that CLKIN is in the state of "0".

Sampling data from the sensor 68a is input to the slave communication unit 100 at each sampling cycle. As a result, sampling data is accumulated in the memory 110 on the slave side, and the amount of sampling data is increased.

When the communication timing comes, the communication unit 111 and the communication unit 121 communicate with each other and exchange data with each other. As a result, the CLKIN on the master side is transmitted to the slave side, and the state of the CLKIN on the slave side is updated. Further, the CLKOUT on the slave side is transmitted to the master side, and the state of the CLKOUT on the master side is updated.

In the communication timing T1 shown in FIG. 5, the communication unit 111 stores the data in which the CLKOUT state is “0”, and the communication unit 121 stores the data in which the CLKIN state is “0”. It is assumed that there is. At the communication timing T1, since the CLKIN state on the master side is “0”, the CLKIN state on the slave side is updated from “1” to “0”. Further, since the state of CLKOUT on the slave side is "0", the state of CLKOUT on the master side is updated from "1" to "0".

In the communication unit 111, the first change unit 131 periodically monitors the state of CLKIN. When the state of CLKIN changes, the first changing unit 131 changes the state of CLKOUT stored in the memory 110 to a different state. For example, the first change unit 131 changes the CLKOUT state to "1" when the CLKOUT state is "0", and changes the CLKOUT state to "0" when the CLKOUT state is "1". Change to. For example, the first change unit 131 changes the state of CLKOUT to "1" in the case of communication timing T1 and changes the state of CLKOUT to "0" in the case of communication timing T2.

When the change of the CLKOUT state by the first change unit 131 is completed, the first transmission data control unit 132 stores the CLKOUT, the number of stored data, and the sampling data stored in the memory 110 in the communication unit 111. As a result, the communication unit 111 stores data to be transmitted at the next communication timing.

Here, when an excessive number of sampling data that cannot be transmitted at one transmission timing is accumulated in the memory 110 for some reason, the first transmission data control unit 132 divides the memory 110 into a plurality of transmission timings, and more than usual. By transmitting the data, it is possible to eliminate the excessive accumulation of sampling data. For example, when the normal data storage number N in the communication unit 111 is 10 (10 sampling data every 100 msec), the first transmission data control unit 132 has data storage number N> for a plurality of transmission cycles. By setting it to 10, the excessive accumulation of sampling data is eliminated.

The erasing unit 133 erases the sampling data from the memory 110 when the storage of the data in the communication unit 111 by the first transmission data control unit 132 is completed. As a result, in the memory 110, the sampling data stored in the communication unit 111 is erased from the memory 110, and the sampling data sampled thereafter is accumulated.

On the other hand, in the master communication unit 101, the acquisition unit 140 periodically monitors the state of CLKOUT. When the state of CLKOUT changes, the acquisition unit 140 acquires the number of data stored in the memory 120 and the sampling data. Then, the capture unit 140 outputs the number of captured data and each sampling data to the control unit 80. As a result, each sampling data is transmitted to the control unit 80.

When the data acquisition by the acquisition unit 140 is completed, the second change unit 142 changes the state of the CLKIN stored in the memory 120 to a different state. For example, the second change unit 142 changes the CLKIN state to "1" when the CLKIN state is "0", and changes the CLKIN state to "0" when the CLKIN state is "1". Change to. For example, the first change unit 131 changes the CLKIN state to "1" in the case of the communication timing T1 and changes the CLKIN state to "0" in the case of the communication timing T2.

When the change of the CLKIN state by the second change unit 142 is completed, the second transmission data control unit 141 stores the CLKIN and supplementary information data stored in the memory 120 in the communication unit 121. As a result, the communication unit 121 stores data to be transmitted at the next communication timing.

In this way, the slave communication unit 100 transmits the data including the sampling data stored in the CLKOUT and the memory 110 to the master communication unit 101 at the communication timing. When the CLKIN state included in the data received from the master communication unit 101 is changed from the previous data communication state, the slave communication unit 100 changes the CLKOUT state from the previous data communication state. At the same time, the data stored in the memory 110 is erased. When the state of CLKOUT included in the data received from the slave communication unit 100 is changed from the state of the previous data communication, the master communication unit 101 captures the sampling data included in the received data and the state of CLKIN. Is changed to a state different from the state of the previous data communication. The master communication unit 101 transmits data including CLKIN to the slave communication unit 100 at the communication timing. As a result, the plasma processing device 1 can transmit data from the slave communication unit 100 to the master communication unit 101 at each communication timing.

Further, when the acquisition of the sampling data included in the received data is completed, the master communication unit 101 changes the CLKIN state to a different state. The CLKIN state is transmitted from the master communication unit 101 to the slave communication unit 100 at the communication timing. The CLKIN functions as a flag indicating that the acquisition of sampling data has been completed by the master communication unit 101 by changing the state. When the state of CLKIN received from the master communication unit 101 is changed to a different state, the slave communication unit 100 changes the state of CLKOUT to a different state. Further, the slave communication unit 100 stores the CLKOUT state and the sampling data stored in the memory 110 in the communication unit 111 as transmission target data. Further, the slave communication unit 100 erases the sampling data stored in the memory 110. CLKOUT functions as a flag indicating that the data has been updated by changing the state. The communication unit 111 transmits the stored transmission target data to the master communication unit 101 at the communication timing. When the state of CLKOUT received from the slave communication unit 100 is changed to a different state, the master communication unit 101 takes in sampling data included in the received data. Further, the master communication unit 101 changes the state of CLKIN to a different state. As a result, the slave communication unit 100 does not duplicately transmit the sampling data successfully captured by the master communication unit 101 to the master communication unit 101, so that the occurrence of duplicate transmission of the same sampling data can be suppressed.

[effect]
As described above, in the plasma processing apparatus 1 according to the present embodiment, the slave communication unit 100 and the master communication unit 101 perform data communication at periodic communication timings. The slave communication unit 100 stores sampling data in the memory 110. The slave communication unit 100 transmits the first data including the sampling data stored in the CLKOUT and the memory 110 to the master communication unit 101 at the communication timing. In the slave communication unit 100, the state of CLKIN, which is one of two or more states included in the second data received from the master communication unit 101, has been changed from the previous data communication state. In this case, the state of CLKOUT is changed to a state different from the state of the previous data communication, and the sampling data stored in the memory 110 is erased. When the state of CLKOUT included in the first data received from the slave communication unit 100 is changed from the state of the previous data communication, the master communication unit 101 captures the sampling data included in the first data. , Change the CLKIN status to a status different from the previous data communication status. The master communication unit 101 transmits the second data including CLKIN to the slave communication unit 100 at the communication timing. As a result, the plasma processing device 1 can transmit sampling data from the slave communication unit 100 to the master communication unit 101 at each communication timing. As a result, the plasma processing device 1 can reduce the amount of data transmitted in one communication as compared with the case where the data can be transmitted to the communication partner only at two communication timings as in the conventional technique. , Communication load can be reduced. Further, the plasma processing device 1 can transmit sampling data to the control unit 80 in real time.

Further, in the plasma processing apparatus 1 according to the present embodiment, the slave communication unit 100 monitors the state of CLKIN included in the second data, and when the state of CLKIN changes, sampling stored in CLKOUT and the memory 110. The first data including the data is transmitted to the master communication unit 101. After the transmission of the first data is completed, the slave communication unit 100 erases the data stored in the storage unit and changes the state of CLKOUT. The master communication unit 101 monitors the state of CLKOUT included in the first data received from the slave communication unit 100, and when the state of CLKOUT changes, the sampling data included in the first data is taken in. After capturing the sampling data, the master communication unit 101 changes the CLKIN state to a state different from the previous data communication state. As a result, in the plasma processing device 1, the slave communication unit 100 monitors the CLKIN status and the master communication unit 101 monitors the CLKOUT status, so that the slave communication unit 100 moves to the master communication unit 101 at each communication timing. Sampling data can be sent.

(Other embodiments)
The plasma processing apparatus and the control method according to the embodiment have been described above, but the present invention is not limited thereto. Hereinafter, other embodiments will be described.

For example, in the above embodiment, the case where the substrate processing device is the plasma processing device 1 has been described as an example, but the present invention is not limited to this. The board processing device is a device that performs board processing on a board, and may be any device as long as a plurality of communication units periodically perform data communication, such as a remote I / O. ..

Further, in the above embodiment, the case where the data to be transmitted is sampled data that is periodically sampled has been described as an example, but the present invention is not limited to this. The data to be transmitted may be any data.

Further, in the above embodiment, the case where CLKOUT and CLKIN are used as one bit as a flag representing two states has been described as an example, but the present invention is not limited to this. CLKOUT and CLKIN may be set to a plurality of bits to represent three or more states.

1 Plasma processing device 80 Control unit 100 Slave communication unit 101 Master communication unit 110 Memory 111 Communication unit 112 Control unit 120 Memory 121 Communication unit 122 Control unit 130 Storage unit 131 First change unit 132 First transmission data control unit 133 Erase Unit 140 Import unit 141 Second transmission data control unit 142 Second change unit

Claims (4)

It is a communication method of a board processing device in which a first communication unit and a second communication unit perform data communication at periodic communication timings.
The first communication unit is
The first flag in any of the two or more states is stored in the first storage unit, and the first flag is stored in the first storage unit.
The data to be transmitted is stored in the first storage unit, and the data to be transmitted is stored in the first storage unit.
The stored first data is transmitted to the second communication unit at the communication timing, and the second flag including a second flag in any of two or more states from the second communication unit is included. The state of the second flag included in the second data received from the second communication unit is changed from the state of the previous data communication by the first communication unit that receives the data of 2 at the communication timing. If so, the state of the first flag stored in the first storage unit is changed to a state different from the state of the previous data communication.
When the change of the state of the first flag stored in the first storage unit is completed, the first flag stored in the first storage unit and the transmission target stored in the first storage unit The first data including the data is stored in the first communication unit, and the first data is stored in the first communication unit.
When the storage of the data to be transmitted in the first communication unit is completed, the data to be transmitted stored in the first storage unit is erased.
The second communication unit is
The second flag is stored in the second storage unit, and the second flag is stored in the second storage unit.
The second communication unit transmits the stored second data to the first communication unit at the communication timing and receives the first data from the first communication unit at the communication timing . When the state of the first flag included in the first data received from the communication unit 1 is changed from the state of the previous data communication, the data included in the first data is taken in. ,
When the data acquisition is completed, the state of the second flag stored in the second storage unit is changed to a state different from the state of the previous data communication.
When the change of the state of the second flag stored in the second storage unit is completed, the second data including the second flag stored in the second storage unit is transferred to the second communication unit. Store in
A communication method of a substrate processing apparatus, characterized in that. The communication method for a substrate processing apparatus according to claim 1, wherein the data to be transmitted is sampling data that is periodically sampled. The communication method for a substrate processing apparatus according to claim 1 or 2 , wherein the first communication unit and the second communication unit perform data communication by remote I / O. A board processing device in which a first communication unit and a second communication unit perform data communication at periodic communication timings.
The first communication unit is
A first storage unit that stores the first flag in any of two or more states and stores data to be transmitted, and
The stored first data is transmitted to the second communication unit at the communication timing, and the second flag including a second flag in any of two or more states from the second communication unit is included. The first communication unit that receives the data of 2 at the communication timing, and
When the state of the second flag included in the second data received from the second communication unit is changed from the state of the previous data communication, the first stored in the first storage unit . The first change part that changes the state of the flag of 1 to a state different from the state of the previous data communication,
When the change of the state of the first flag stored in the first storage unit by the first changing unit is completed, the first flag stored in the first storage unit and the first storage unit A first transmission data control unit that stores the first data including the accumulated data to be transmitted in the first communication unit, and a first transmission data control unit.
When the storage of the data to be transmitted by the first transmission data control unit in the first communication unit is completed, the erasing unit for erasing the data to be transmitted stored in the first storage unit is used. Have and
The second communication unit is
A second storage unit that stores the second flag, and
A second communication unit that transmits the stored second data to the first communication unit at the communication timing and receives the first data from the first communication unit at the communication timing.
When the state of the first flag included in the first data received by the second communication unit is changed from the state of the previous data communication, the data included in the first data is taken in. Incorporation and
When the data acquisition by the import unit is completed, the second change unit that changes the state of the second flag stored in the second storage unit to a state different from the state of the previous data communication, and the second change unit.
When the change of the state of the second flag stored in the second storage unit by the second changing unit is completed, the second flag including the second flag stored in the second storage unit is included. A substrate processing apparatus comprising: a second transmission data control unit for storing data in the second communication unit .

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