JP7030898B2 - Power converter - Google Patents

Description

The present application relates to a power conversion device.

In recent years, hybrid vehicles such as electric vehicles (EV: Electric Vehicle) and HEV (Hybrid Electric Vehicle) / PHEV (Plug-in Hybrid Electric Vehicle) have been developed as environment-friendly vehicles.

In such an automobile, in addition to the auxiliary battery for operating the control circuit, which is also installed in the conventional automobile, the drive battery for driving the electric motor for driving by the charged electric power is installed. .. Further, in such an automobile, it is desired to reduce the loss and increase the efficiency of the electric power train component in order to improve the fuel efficiency against the background of the progress of the power electronics technology.

Therefore, as a conventional technique of a boost converter for boosting a drive battery voltage, an example of a multi-phase boost converter in which a plurality of boost converters are connected in parallel and the plurality of boost converters are controlled by drive signals having a plurality of different phases is patented. It is disclosed in 1. Since this multi-phase boost converter can reduce the load per phase as compared with the single-phase boost converter at high load, it can be miniaturized.

Japanese Unexamined Patent Publication No. 2017-158372

However, in the multi-phase boost converter disclosed in Patent Document 1, although the individual reactor size can be reduced as the number of phases increases, the number of reactors increases in order to control the multi-phase boost converter. It is necessary to provide a current sensor in each phase in order to control the current. Since the current sensor for a large current is expensive, there is a problem that the cost of the current sensor increases while the reactor size becomes small.

However, in a multi-phase boost converter, if the number of current sensors is reduced, the current flowing in each phase cannot be detected, so the current may be biased in some cases, and an excessive current may flow. There is a risk of damaging parts or elements.

The present application has been made to solve the above-mentioned problems, and it is a multi-phase step-up converter, and even when the number of expensive current sensors is reduced, the reactor temperature sensor arranged in the reactor is used. By using the detected temperature information, the total number of current sensors and reactor temperature sensors can be reduced for the entire device, and the cost can be reduced, while the protection judgment against reactor overheating caused by drift or overcurrent functions effectively. It is an object of the present invention to provide a power conversion device.

The power conversion device disclosed in the present application is a power conversion device composed of an N-phase boost converter having N of 3 or more, and semiconductor switching composed of a plurality of semiconductor switching elements provided corresponding to the N-phase. The element pair, N reactors corresponding to the N phase, N - 1 reactor temperature sensors arranged between the N reactors, and the reactor temperature value detected by the reactor temperature sensor. A control unit that controls on / off of the semiconductor switching element pair based on the above.

According to the power conversion device disclosed in the present application, the number of current sensors may be smaller than the total number of reactors, and the number of reactor temperature sensors is smaller than the total number of reactors arranged between the plurality of reactors. Based on the reactor temperature value detected by, it detects whether or not an excessive current is flowing in one of multiple reactors, so that the total number of current sensors and reactor temperature sensors can be reduced for the entire power converter. Therefore, the effect is that the cost of the power conversion device can be reduced.

It is a schematic block diagram which shows the power conversion apparatus by Embodiment 1. FIG. It is a schematic block diagram which shows the modification of the power conversion apparatus by Embodiment 1. FIG. It is a schematic block diagram which shows the power conversion apparatus by a comparative example. It is a schematic diagram which shows an example of the magnetic coupling reactor of the power conversion apparatus according to Embodiment 1. FIG. It is a schematic diagram which shows an example of the magnetic coupling reactor of the power conversion apparatus according to Embodiment 1. FIG. It is a schematic diagram which shows an example of the magnetic coupling reactor of the power conversion apparatus according to Embodiment 1. FIG. It is explanatory drawing when an excessive current flows through the coil of the magnetic coupling reactor of the power conversion apparatus according to Embodiment 1. FIG. It is explanatory drawing when an excessive current flows through the coil of the magnetic coupling reactor of the power conversion apparatus according to Embodiment 1. FIG. It is explanatory drawing when an excessive current flows through the coil of the magnetic coupling reactor of the power conversion apparatus according to Embodiment 1. FIG. It is a schematic diagram which shows the modification of the magnetic coupling reactor of the power conversion apparatus by Embodiment 1. FIG. It is a schematic diagram which shows the modification of the magnetic coupling reactor of the power conversion apparatus by Embodiment 1. FIG. It is a schematic diagram which shows the modification of the magnetic coupling reactor of the power conversion apparatus by Embodiment 1. FIG. It is a figure which shows the flowchart which is an example of the overheat protection determination algorithm by Embodiment 1. FIG. It is a schematic block diagram which shows the power conversion apparatus by Embodiment 2. It is a figure which shows the flowchart which is an example of the overheat protection determination algorithm by Embodiment 2. It is a schematic block diagram which shows the power conversion apparatus by Embodiment 3. FIG. It is a figure which shows the flowchart which is an example of the overheat protection determination algorithm by Embodiment 3. FIG. It is a figure which shows the flowchart which is an example of the overheat protection determination algorithm by Embodiment 4. It is a schematic block diagram which shows the power conversion apparatus according to Embodiment 5. It is a figure which shows an example of the hardware of the power conversion apparatus according to Embodiments 1-5.

Hereinafter, preferred embodiments of the power conversion device according to the present disclosure will be described with reference to the drawings, but the same or corresponding portions in the drawings will be designated by the same reference numerals and duplicated description will be omitted.

Embodiment 1.
FIG. 1 is a schematic configuration diagram showing a power conversion device according to the first embodiment.
The power conversion device 100 according to the first embodiment is a boost converter having a three-phase interleaved configuration. The power storage unit 1 is connected to the input side of the boost converter, and the load 10 is connected to the output side of the boost converter. The power storage unit 1 outputs a DC voltage to the power conversion device 100. Here, when the power conversion device 100 according to the first embodiment is applied to an electric vehicle or a hybrid vehicle, the power storage unit 1 typically comprises a secondary battery such as nickel hydrogen or lithium ion. The output voltage of the power storage unit 1 is at least 100 V or more.

The power conversion device 100 according to the first embodiment, that is, the boost converter having a three-phase interleaved configuration including the first phase, the second phase, and the third phase, has concrete components from the input capacitor 2 to the smoothing capacitor 9. It consists of each element of. The power conversion device 100 may include a power storage unit 1 which is an aspect of an input power source.
In the power conversion device 100, an input capacitor 2 is connected in parallel with the power storage unit 1 in order to remove the ripple current, and a reactor L1 (first reactor) corresponding to the first phase is on the rear side of the input capacitor 2. , The magnetically coupled reactor 12 in which the reactor L2 (second reactor) corresponding to the second phase and the reactor L3 (third reactor) corresponding to the third phase are arranged so as to be magnetically coupled to each other is connected.

In the magnetically coupled reactor 12, the reactor L2 is arranged between the reactor L1 and the reactor L3. That is, the reactor L2 is located in the central portion of the magnetically coupled reactor 12. Further, M1 in FIG. 1 represents the mutual conductance between the reactor L1 and the reactor L2, and M2 represents the mutual conductance between the reactor L2 and the reactor L3.

The first current sensor 22 that detects the entire current flowing through the magnetically coupled reactor 12 is connected between the positive electrode side of the power storage unit 1 and the magnetically coupled reactor 12, and the reactor current value IL before being divided into each _reactor , That is, it is arranged so as to detect the reactor current value _IL , which is the total current flowing through the magnetically coupled reactor 12. The first current sensor 22 is typically composed of a reactor current detection circuit.

Assuming that the current value flowing through the reactor _L1 constituting the magnetically coupled reactor 12 is IL1, the current value flowing through the reactor _L2 is IL2, and the current value flowing through the reactor _L3 is IL3, the first current sensor 22 is the magnetically coupled reactor 12 The reactor current value _IL = _IL1 + _IL2 + _IL3 , which is the sum of the currents flowing through the entire current, is detected.

In the subsequent stage of the magnetically coupled reactor 12, the first semiconductor switching element 3 and the second semiconductor switching element 4 constituting the first semiconductor switching element pair 13 and the third semiconductor switching element 5 constituting the second semiconductor switching element pair 14 are present. The fourth semiconductor switching element 6 and the fifth semiconductor switching element 7 and the sixth semiconductor switching element 8 constituting the third semiconductor switching element pair 15 are arranged, respectively, and the first semiconductor switching element pair 13 and the second semiconductor switching element are switched. A smoothing capacitor 9 is connected in parallel to the subsequent stages of the element pair 14 and the third semiconductor switching element pair 15.

Each drain terminal of the first semiconductor switching element 3, the third semiconductor switching element 5, and the fifth semiconductor switching element 7 is connected to the positive electrode side of the smoothing capacitor 9, respectively, and the second semiconductor switching element 4, the fourth semiconductor switching. Each source terminal of the element 6 and the sixth semiconductor switching element 8 is connected to the negative electrode side of the smoothing capacitor 9.

Further, the source terminal of the first semiconductor switching element 3 constituting the first semiconductor switching element pair 13, the drain terminal of the second semiconductor switching element 4, and the source of the third semiconductor switching element 5 constituting the second semiconductor switching element pair 14. The terminal and the drain terminal of the fourth semiconductor switching element 6, the source terminal of the fifth semiconductor switching element 7 constituting the third semiconductor switching element pair 15, and the drain terminal of the sixth semiconductor switching element 8 are connected to each other. Each connection point is connected to a magnetically coupled reactor 12.

In the reactors L1, reactor L2, and reactor L3 constituting the magnetically coupled reactor 12, the reactor L1 has the connection point of the first semiconductor switching element pair 13 and the reactor L2 has the connection point of the second semiconductor switching element pair 14 and the reactor. L3 is connected to the connection point of the third semiconductor switching element pair 15, respectively.

The control unit 11 is composed of a control line 30a, a control line 30b, a control line 30c, a control line 30d, a control line 30e, and a control line 30f, thereby forming a first semiconductor switching element 3, a second semiconductor switching element 4, and a third semiconductor switching element. The 5th and 4th semiconductor switching elements 6 and the 5th semiconductor switching elements 7 and the 6th semiconductor switching elements 8 are controlled on and off with a predetermined dead time, respectively. Further, the first semiconductor switching element pair 13, the second semiconductor switching element pair 14, and the third semiconductor switching element pair 15 are controlled by shifting their phases by 120 °, respectively.

The input voltage detection circuit 20 is connected in parallel with the power storage unit 1 and detects the input voltage Vi of the boost converter. The output voltage detection circuit 21 is connected in parallel with the smoothing capacitor 9 and detects the output voltage Vo.

Further, in order to detect the coil temperature of the magnetically coupled reactor 12, the first temperature sensor 16 for the reactor and the second temperature sensor 17 for the reactor are arranged in the magnetically coupled reactor 12. The control unit 11 acquires voltage, current, and temperature information via the signal line 31a, the signal line 31b, the signal line 31c, the signal line 31d, and the signal line 31e.

Here, in the power conversion device 100 according to the first embodiment, the first to sixth semiconductor switching elements 3 to 8 used as the boost converter are MOSFETs (Metal-Oxide-Semiconductor Diode-Effective Transistor). The configuration is not limited, and for example, it may be configured by an IGBT (Insulated Gate Bipolar Transistor) and a diode (Diode).

Further, in the power conversion device 100 according to the first embodiment, the magnetically coupled reactor 12 is used as the step-up converter, but the present invention is not limited to the magnetically coupled reactor 12, and for example, according to the first embodiment shown in FIG. As shown in the schematic configuration diagram of the power conversion device 110 according to the modified example of the power conversion device 100, even if the three reactors of the reactor L1, the reactor L2, and the reactor L3 are individually arranged without being magnetically coupled, the above figure is shown. It has the same effect as the power conversion device 100 shown in 1. In the power conversion device 110 according to the modified example, the first temperature sensor 16 for the reactor and the second temperature sensor 17 for the reactor are arranged at positions where thermal interference caused by the adjacent reactors can be detected between the reactors. ..

However, it goes without saying that the power conversion device 100 having a plurality of reactors composed of the magnetically coupled reactor 12 is more suitable for low cost and miniaturization.

Here, the features of the power conversion device 100 according to the first embodiment will be described in comparison with the power conversion device 150 which is a comparative example.
FIG. 3 shows a schematic configuration diagram of a multi-phase boost converter, specifically, a three-phase interleave as the power conversion device 150 of the comparative example. As shown in FIG. 3, in the power conversion device 150 of the comparative example, the current sensor 26, the current sensor 27, and the current sensor 28 are connected to each phase, that is, the reactor L1, the reactor L2, and the reactor L3, respectively, and are connected to each reactor. The current values required to control the flowing current so that it is not biased are detected.

Although not shown, each reactor is provided with a reactor temperature sensor, and each reactor is protected from overheating based on the temperature value detected by the reactor temperature sensor. However, as described above, in the power conversion device 150 that handles a large amount of power, there is a cost problem that the cost for the entire current sensor becomes high.

On the other hand, in the power conversion device 100 according to the first embodiment, as shown in FIG. 1, the first current sensor 22 is arranged before each of the reactors of the reactor L1, the reactor L2, and the reactor L3 is branched, and the magnetically coupled reactors are magnetically coupled. Although the reactor current value IL flowing through the entire 12 can be detected, the current value _IL1 flowing through the reactor _L1 and the current values IL2 and the reactor L3 flowing through the reactor _L2 are divided into each phase through the branch point of the wiring. The flowing current value _IL3 cannot be detected individually.

However, in the power conversion device 100 according to the first embodiment, even when the number of current sensors is reduced as much as possible, it is detected by the reactor current value _IL detected by the first current sensor 22 and the first temperature sensor 16 for the reactor. Using the reactor first temperature value SnsTL1 and the reactor second temperature value SnsTL2 detected by the reactor second temperature sensor 17, the control unit 11 determines the current flowing between the reactors L1, the reactor L2, and the reactor L3. By controlling so as to suppress the bias, it is possible to prevent the semiconductor switching elements 3 to 8 from being destroyed due to an excessive current flowing into one phase.

FIGS. 4 to 6 show an example of the magnetic coupling reactor 12 in the configuration of the power conversion device 100 according to the first embodiment. FIG. 4 is a schematic view of the magnetically coupled reactor 12, FIG. 5 is a schematic view showing the internal structure of the magnetically coupled reactor 12, and FIG. 6 is a top view showing the internal structure of the magnetically coupled reactor 12. As shown in FIGS. 4 to 6, in the magnetically coupled reactor 12, a coil of three phases of the reactor, that is, a coil of the reactor L1, a coil of the reactor L2, and a coil of the reactor L3 are wound on one core, respectively. ..

As shown in FIG. 6, between the coils of each reactor, that is, between the coils of the reactor L1 and the coil of the reactor L2, the first temperature sensor 16 for the reactor, and the second temperature for the reactor between the coils of the reactor L2 and the coil of the reactor L3. Sensors 17 are arranged respectively.

With such an arrangement, the first temperature sensor 16 for the reactor has the reactor first temperature value SnsTL1 caused by the heat generation of the coil of the reactor L1 and the coil of the reactor L2, and the second temperature sensor 17 for the reactor has the coil of the reactor L2 and the reactor L3. The reactor second temperature value SnsTL2 caused by the heat generation of the coil is independently detected.

The thermistor is typically used as the first temperature sensor 16 for the reactor and the second temperature sensor 17 for the reactor, but the thermistor is not limited to the thermistor, and other types of temperature sensors may be applied.

Here, a control method for suppressing the drift of the reactor current by the control unit 11 in the power conversion device 100 according to the first embodiment will be described.

7 to 9 are explanatory views when an excessive current flows through each coil of each reactor L1, reactor L2, and reactor L3. When the reactor current value IL detected by the first current sensor 22 is larger than the _{predetermined} first _threshold current Is 1, for example, when the rated output value is exceeded, the control unit 11 acts as a fail-safe mechanism. Assuming that an overcurrent is flowing, the operation of on / off control for the semiconductor switching element pair is stopped.

On the other hand, when the reactor current value IL detected by the first current sensor 22 is equal to or less than the first threshold current It _th1 , the current values _IL1 , IL2, which flow in each of the reactors _L1 , the reactor _L2 , and the reactor L3, respectively. It is necessary to control _IL3 individually.

FIG. 7 shows that the reactor current value IL detected by the first current sensor 22 is the first threshold current _Is 1 or less, for example, the rated output or less, and the first phase of the reactor _L1 with respect to each phase of the reactor L2 and the reactor L3. It is explanatory drawing when an excessive current flows through. That is, the following mathematical formula (1) is satisfied.
_IL ≤ _Itth1 , _IL1 >> _IL2 , _IL1 >> _IL3 (1)
In this case, the coil of the reactor L1 generates heat, which is higher than the temperature of the coil of the other reactor L2 and the temperature of the coil of the reactor L3.

Therefore, the reactor first temperature value SnsTL1 detected by the reactor first temperature sensor 16 arranged so as to thermally interfere with the coil of the reactor L1 is the reactor second detected by the reactor second temperature sensor 17. It becomes higher than the temperature value SnsTL2. That is, the following mathematical formula (2) is established.
SnsTL1> SnsTL2 (2)

In this case, the reactor first temperature value SnsTL1 detected by the reactor first temperature sensor 16 has a predetermined first temperature with respect to the reactor second temperature value SnsTL2 detected by the reactor second temperature sensor 17. When the difference value is higher than ΔT _th1 , that is, when the following formula (3) holds.
SnsTL1-SnsTL2> ΔT _th1 (3)
The control unit 11 determines that an excessive current is flowing in the first phase of the reactor L1, and reduces the on-duty of the first semiconductor switching element pair 13 via the control line 30a and the control line 30b to reduce the reactor. The current value IL1 flowing in the first phase of _L1 is suppressed.

At this time, when the power conversion device 100 is power running, that is, the direction in which the current flows is from the power storage unit 1 to the load 10, the control unit 11 turns on the first semiconductor switching element 3 via the control line 30a. Reduce duty. On the other hand, when the regenerative operation, that is, the direction in which the current flows is from the load 10 to the storage unit 1, the control unit 11 reduces the on-duty of the second semiconductor switching element 4 via the control line 30b.

FIG. 8 shows that the reactor current value IL detected by the first current sensor 22 is equal to or less than the predetermined first threshold current _Ith1 , for example, the rated output or less, with respect to each phase of the reactor _L1 and the reactor L3. It is explanatory drawing when an excessive current flows through the 2nd phase of a reactor L2. That is, the following mathematical formula (4) is satisfied.
_{IL ≤ Itth1 , IL2} >> _IL1 , _IL2 >> _IL3 (4)

In this case, the coil of the reactor L2 generates heat, which is higher than the temperature of the coil of the other reactor L1 and the temperature of the coil of the reactor L3. Therefore, the reactor first temperature value SnsTL1 detected by the reactor first temperature sensor 16 arranged so as to thermally interfere with the coil of the reactor L2 and the reactor second temperature detected by the reactor second temperature sensor 17. Both values SnsTL2 are high.

When the reactor first temperature value SnsTL1 and the reactor second temperature value SnsTL2 detected by the reactor first temperature sensor 16 and the reactor second temperature sensor 17, respectively, become higher than the predetermined threshold temperature _Tth , that is, , If the following formula (5) holds,
SnsTL1> _Thth , SnsTL2> _Thth (5)
The control unit 11 determines that an excessive current is flowing in the second phase of the reactor L2, and reduces the on-duty of the second semiconductor switching element pair 14 via the control line 30c and the control line 30d to reduce the reactor. The current value IL2 flowing through _L2 is suppressed.

At this time, when the power conversion device 100 is power running, that is, the direction in which the current flows is from the power storage unit 1 to the load 10, the control unit 11 turns on the third semiconductor switching element 5 via the control line 30c. Reduce duty. On the other hand, when the regenerative operation, that is, the direction in which the current flows is from the load 10 to the storage unit 1, the control unit 11 reduces the on-duty of the fourth semiconductor switching element 6 via the control line 30d.

FIG. 9 shows that the reactor current value IL detected by the first current sensor 22 is equal to or less than the threshold current _Is , for example, the rated output or less, and the third phase of the reactor L3 with respect to each phase of the reactor _L1 and the reactor L2. It is explanatory drawing when an excessive current flows through. That is, the following mathematical formula (6) is satisfied.
_IL ≤ If 1, _{IL 3} >> IL ₁ , IL ₃ >> _IL 2 (6)

In this case, the coil of the reactor L3 generates heat, and the temperature becomes higher than the coil temperature of the reactor L1 and the coil temperature of the reactor L2. Therefore, the reactor second temperature value SnsTL2 detected by the reactor second temperature sensor 17 arranged so as to thermally interfere with the coil of the reactor L3 is the reactor first detected by the reactor first temperature sensor 16. The temperature value is higher than that of SnsTL1. That is, the following mathematical formula (7) is established.
SnsTL2> SnsTL1 (7)

With respect to the reactor first temperature value SnsTL1 detected by the reactor first temperature sensor 16, the reactor second temperature value SnsTL2 detected by the reactor second temperature sensor 17 is a predetermined first temperature difference value ΔT _th1 . When it becomes higher than, that is, when the following formula (8) holds.
SnsTL2-SnsTL1> ΔT _th1 (8)
The control unit 11 determines that an excessive current is flowing in the third phase of the reactor L3, and reduces the on-duty of the third semiconductor switching element pair 15 via the control line 30e and the control line 30f to reduce the reactor. The current value IL3 flowing through _L3 is suppressed.

At this time, when the power conversion device 100 is power running, that is, the direction in which the current flows is from the storage unit 1 to the load 10, the control unit 11 turns on the fifth semiconductor switching element 7 via the control line 30e. Reduce duty. On the other hand, when the regenerative operation, that is, the direction in which the current flows is from the load 10 to the storage unit 1, the control unit 11 reduces the on-duty of the sixth semiconductor switching element 8 via the control line 30f.

Regarding the magnetically coupled reactor 12 of the power conversion device 100 according to the first embodiment, in the above description, a so-called inner iron type reactor in which a coil is wound on the outside of the core is taken as an example, but the present invention is not limited to this, for example. The configuration may have a core on the outside of the coil. Examples of such a configuration are shown in FIGS. 10 to 12. 10 is a schematic view of a modified example of the magnetically coupled reactor 12, FIG. 11 is a schematic view showing the internal structure of the modified example of the magnetically coupled reactor 12, and FIG. 12 is a top view showing the internal structure of the modified example of the magnetically coupled reactor 12. Each is shown.

In the modification of the magnetically coupled reactor 12 shown in FIGS. 10 to 12, the first temperature sensor 16 for the reactor and the second temperature sensor 17 for the reactor interfere with each other between the coils of the reactor L1, the reactor L2, and the reactor L3. Each is arranged so as to receive the coil, and the core covers the outer peripheral portion of the coil. The configuration of the modified example of the magnetically coupled reactor 12 not only has the effect of the power conversion device according to the first embodiment, but also has the effect of facilitating the acquisition of the core temperature.

An example of the protection determination algorithm against overheating of the reactor of the control unit 11 of the power conversion device 100 according to the first embodiment is shown in the flowchart of FIG.

First, in step S10, the control unit 11 _acquires the reactor current value IL detected by the first current sensor 22.

Next, in step _S20 , it is determined whether or not the reactor current value IL is larger than the first threshold current _Is1 . When it is determined in step _S20 that the reactor current value _IL is larger than the first threshold current Is 1, an excessive current is flowing in the entire power conversion device 100, so that control is performed in step S30. The unit 11 determines that the current is overcurrent, and stops the operation of on / off control for the semiconductor switching element pair.

On the other hand, when it is determined that the reactor current value IL is equal to or less than the first threshold current It _th1 , in step S40, the control unit 11 determines the reactor first temperature value _SnsTL1 and the reactor detected by the reactor first temperature sensor 16. Each temperature value of the reactor second temperature value SnsTL2 detected by the second temperature sensor 17 is acquired.

Next, in step S50, it is determined whether or not the reactor first temperature value SnsTL1 detected by the reactor first temperature sensor 16 arranged between the reactor L1 and the reactor L2 is higher than the threshold temperature _Tth .

When it is determined in step S50 that the reactor first temperature value SnsTL1 is equal to or less than the threshold temperature _Tth , the reactor detected by the reactor second temperature sensor 17 arranged between the reactor L2 and the reactor L3 in step S60. It is determined whether or not the second temperature value SnsTL2 is higher than the threshold temperature _Tth .

On the other hand, when it is determined in step S50 that the reactor first temperature value SnsTL1 is higher than the threshold temperature _Tth , in step S70, the reactor second temperature sensor 17 arranged between the reactor L2 and the reactor L3 causes the reactor second temperature sensor 17. It is determined whether or not the detected reactor second temperature value SnsTL2 is higher than the threshold temperature _Tth .

Next, when it is determined in step S60 that the second temperature value SnsTL2 of the reactor is equal to or less than the threshold temperature _Tth , in step S80, the control unit 11 determines that there is no bias in the current between the reactors.

On the other hand, when it is determined in step S60 that the reactor second temperature value SnsTL2 is higher than the threshold temperature _Tth , in step S90, the reactor L3 is generating heat in the control unit 11, and an excessive current is transmitted to the reactor L3. It is determined that the current is flowing, that is, the current is biased to the reactor L3, and in step S91, the control unit 11 reduces the on-duty of the third semiconductor switching element pair 15 via the control line 30e and the control line 30f. ..

Next, in step S70, when the reactor second temperature value SnsTL2 is determined to be equal to or less than the threshold temperature _Tth , in step S100, the reactor L1 is generating heat in the control unit 11, and an excessive current flows to the reactor L1. That is, it is determined that the current is biased to the reactor L1, and in step S101, the control unit 11 reduces the on-duty of the first semiconductor switching element pair 13 via the control line 30a and the control line 30b.

On the other hand, when it is determined in step S70 that the reactor second temperature value SnsTL2 is higher than the threshold temperature _Tth , in step S110, the control unit 11 generates heat in the reactor L2 and causes an excessive current to the reactor L2. It is determined that the current is flowing, that is, the current is biased to the reactor L2, and in step S111, the control unit 11 reduces the on-duty of the second semiconductor switching element pair 14 via the control line 30c and the control line 30d. ..

As described above, according to the power conversion device 100 according to the first embodiment, one current sensor may be provided regardless of the number of reactors, and the number of current sensors is one less than the number of reactors arranged between the plurality of reactors. Based on the temperature value detected by the reactor temperature sensor, it detects whether or not an excessive current is flowing in one of multiple reactors, so the total number of current sensors and reactor temperature sensors for the entire power converter. This has the effect of reducing the cost of the power conversion device.

Embodiment 2.
The power conversion device 200 according to the second embodiment will be described below.
FIG. 14 shows the circuit configuration of the power conversion device 200 according to the second embodiment. In the circuit configuration of the power conversion device 200 according to the second embodiment, in addition to the circuit configuration of the power conversion device 100 according to the first embodiment, a water temperature detecting unit 40 for detecting the water temperature of the cooling water is provided.

The power conversion device 200 according to the second embodiment is premised on cooling by water cooling, and the control unit 11 has the cooling water detected by the water temperature detection unit 40 in addition to the reactor temperature value detected by the temperature sensor for the reactor. The water temperature (hereinafter referred to as water temperature SnsTL3) is acquired.

In the power conversion device 100 according to the first embodiment, the reactor current value detected by the first current sensor 22 when determining whether or not the reactor current flowing in each phase is biased to the reactor of any phase. Controlled using information of each temperature value consisting of IL and the reactor first temperature value _SnsTL1 detected by the reactor first temperature sensor 16 and the reactor second temperature value SnsTL2 detected by the reactor second temperature sensor 17. is doing.

On the other hand, in the power conversion device 200 according to the second embodiment, by using the information of the water temperature SnsTL3 of the cooling water in addition to the information from each of the above temperature sensors, it is possible to further improve the accuracy of protection against reactor overheating. It becomes.

FIG. 15 is a flowchart showing an example of a protection determination algorithm for reactor overheating of the control unit 11 in the power conversion device 200 according to the second embodiment.

The flowchart of FIG. 15 is configured by adding step S41, step S61, and step S71 to each step of the flowchart of FIG. Basically, the control unit 11 acquires the information of the water temperature SnsTL3 of the cooling water detected by the water temperature detection unit 40 via the signal line 31f, and the reactor first temperature detected by the reactor first temperature sensor 16. When each temperature value consisting of the reactor second temperature value SnsTL2 detected by the value SnsTL1 and the reactor second temperature sensor 17 is higher than the threshold temperature _Tth , it is determined in the next step that the temperature value is higher than the threshold temperature _Tth . Comparing each reactor temperature value with the water temperature SnsTL3 of the cooling water, if it is determined that the temperature difference between the two is higher than the second temperature difference value ΔT _th2 , it is determined that protection against reactor overheating is necessary, and the semiconductor switching element pair It reduces the on-duty of. Hereinafter, the flowchart of FIG. 15 will be specifically described.

First, in step S10, the control unit 11 _acquires the reactor current value IL detected by the first current sensor 22.

Next, in step _S20 , it is determined whether or not the reactor current value IL is larger than the first threshold current _Is1 . When it is determined in step _S20 that the reactor current value _IL is larger than the first threshold current Is 1, an excessive current is flowing in the entire power conversion device 100, so that control is performed in step S30. The unit 11 determines that the current is overcurrent, and stops the operation of on / off control for the semiconductor switching element pair.

On the other hand, when it is determined that the reactor current value IL is equal to or less than the first threshold current It _th1 , in step S40, the control unit 11 determines the reactor first temperature value _SnsTL1 and the reactor detected by the reactor first temperature sensor 16. Each temperature value of the reactor second temperature value SnsTL2 detected by the second temperature sensor 17 is acquired.

Next, in step S41, the control unit 11 acquires information on the water temperature SnsTL3 of the cooling water detected by the water temperature detection unit 40.

In step S50, it is determined whether or not the reactor first temperature value SnsTL1 detected by the reactor first temperature sensor 16 arranged between the reactor L1 and the reactor L2 is higher than the threshold temperature _Tth .

When it is determined in step S50 that the reactor first temperature value SnsTL1 is equal to or less than the threshold temperature _Tth , the reactor detected by the reactor second temperature sensor 17 arranged between the reactor L2 and the reactor L3 in step S60. It is determined whether or not the second temperature value SnsTL2 is higher than the threshold temperature _Tth .

If it is determined in step S60 that the second temperature value SnsTL2 of the reactor is equal to or less than the threshold temperature _Tth , in step S80, the control unit 11 determines that there is no bias in the current between the reactors.

On the other hand, if it is determined in step S60 that the reactor second temperature value SnsTL2 is higher than the threshold temperature _Tth , in step S61, the temperature difference between the reactor second temperature value SnsTL2 and the water temperature SnsTL3 of the reactor second temperature value SnsTL2 is the second temperature. It is determined whether or not the difference value is higher than ΔT _th2 .

If it is determined in step S61 that the temperature difference between the cooling water of the reactor second temperature value SnsTL2 and the water temperature SnsTL3 is larger than the second temperature difference value ΔT _th2 , the control unit 11 generates heat in the reactor L3 in step S90. It is determined that an excessive current is flowing in the reactor L3, that is, the current is biased to the reactor L3, and in step S91, the control unit 11 determines that the third semiconductor is via the control line 30e and the control line 30f. The on-duty of the switching element pair 15 is reduced.

On the other hand, if it is determined in step S61 that the temperature difference between the reactor second temperature value SnsTL2 and the water temperature SnsTL3 is equal to or less than the second temperature difference value ΔT _th2 , in step S80, the control unit 11 moves between the reactors. It is judged that there is no bias in the current.

When it is determined in step S50 that the reactor first temperature value SnsTL1 is higher than the threshold temperature _Tth , it is detected by the reactor second temperature sensor 17 arranged between the reactor L2 and the reactor L3 in step S70. It is determined whether or not the second temperature value SnsTL2 of the reactor is higher than the threshold temperature _Tth .

When it is determined in step S70 that the reactor second temperature value SnsTL2 is equal to or less than the threshold temperature _Tth , in step S71, the temperature difference of the reactor first temperature value SnsTL1 with respect to the water temperature SnsTL3 is the second temperature difference value ΔT _th2 . Determine if it is greater than.

If it is determined in step S71 that the temperature difference between the cooling water of the reactor first temperature value SnsTL1 and the water temperature SnsTL3 is larger than the second temperature difference value ΔT _th2 , the control unit 11 generates heat in the reactor L1 in step S100. It is determined that an excessive current is flowing in the reactor L1, that is, the current is biased to the reactor L1, and in step S101, the control unit 11 determines that the first semiconductor is via the control line 30a and the control line 30b. The on-duty of the switching element pair 13 is reduced.

On the other hand, if it is determined in step S71 that the temperature difference between the reactor first temperature value SnsTL1 and the water temperature SnsTL3 is equal to or less than the second temperature difference value ΔT _th2 , in step S80, the control unit 11 moves between the reactors. It is judged that there is no bias in the current.

If it is determined in step S70 that the reactor second temperature value SnsTL2 is higher than the threshold temperature _Tth , in step S81, the temperature difference of the reactor first temperature value SnsTL1 with respect to the water temperature SnsTL3 is the second temperature difference value. It is determined whether or not it is larger than ΔT _th2 and whether or not the temperature difference of the reactor second temperature value SnsTL2 with respect to the water temperature SnsTL3 is larger than the second temperature difference value ΔT _th2 .

In step S81, the temperature difference of the cooling water of the reactor first temperature value SnsTL1 with respect to the water temperature SnsTL3 is larger than the second temperature difference value ΔT _th2 , and the temperature difference of the reactor second temperature value SnsTL2 with respect to the water temperature SnsTL3 is the second. When it is determined that the temperature difference value is larger than the two temperature difference values ΔT _th2 , in step S110, the reactor L2 is generating heat in the control unit 11, and an excessive current is flowing in the reactor L2, that is, the current is transferred to the reactor L2. It is determined that the temperature is biased, and in step S111, the control unit 11 reduces the on-duty of the second semiconductor switching element pair 14 via the control line 30c and the control line 30d.

On the other hand, in step S81, the temperature difference between the cooling water of the reactor first temperature value SnsTL1 and the water temperature SnsTL3 is equal to or less than the second temperature difference value ΔT _th2 , and the temperature difference of the reactor second temperature value SnsTL2 with respect to the water temperature SnsTL3. When it is determined that the second temperature difference value is ΔT _th2 or less, in step S80, the control unit 11 determines that there is no bias in the current between the reactors.

As described above, according to the power conversion device 200 according to the second embodiment, one current sensor of the power conversion device 100 according to the first embodiment may be provided regardless of the number of reactors, and may be arranged between a plurality of reactors. Based on the temperature value detected by the reactor temperature sensor, which consists of one less number of reactors, it detects whether or not an excessive current is flowing in one of multiple reactors, so that it is a power converter. Since the total number of current sensors and reactor temperature sensors can be reduced as a whole, the cost of the power converter can be reduced, and the temperature value of each reactor temperature sensor and the water temperature of the cooling water are compared. By doing so, it is possible to realize a more accurate overheat protection determination.

Embodiment 3.
FIG. 16 is a configuration diagram of the power conversion device 300 according to the third embodiment.
The power conversion device 300 according to the third embodiment is the same as the power conversion device 100 according to the first embodiment in that the first current sensor 22 is arranged between the power storage unit 1 and the magnetically coupled reactor 12. The difference is that the second current sensor 23 is arranged on the wiring leading to the second phase of the reactor L2 in the central portion of the wiring after branching to each reactor. Other functions and circuit configurations are the same as those of the power conversion device 100 according to the first embodiment.

FIG. 17 shows a flowchart which is an example of a protection determination algorithm against reactor overheating in the control unit 11 in the power conversion device 300 according to the third embodiment.

First, in step S210, the control unit 11 acquires the reactor current value IL detected by the first current sensor 22 and the current value _IL2 flowing through the reactor _L2 detected by the second current sensor 23, respectively.

Next, in step S220, it is determined whether or not the reactor current value _{IL is larger than the first threshold current Is1 .} If it is determined in step S220 that the reactor current value _IL is larger than the first threshold current _Is 1, an excessive current is flowing through the power conversion device 300 in step S230, so that the control unit 11 is overcurrent. Is determined, and the on / off control operation for each semiconductor switching element pair is stopped.

On the other hand, when it is determined in step S220 that the reactor current value _IL is equal to or less than the first threshold current Is 1, in step _S240 , the control unit 11 controls the reactor first temperature detected by the reactor first temperature sensor 16. Each temperature value of the reactor second temperature value SnsTL2 detected by the value SnsTL1 and the reactor second temperature sensor 17 is acquired.

Next, in step S250, it is determined whether or not the current value IL2 flowing through the reactor _L2 is larger than the second threshold current _Is2 . If it is determined in step S250 that the current value _{IL2 is larger than the second threshold current Itth2 ,} in step S260, the control unit 11 determines that an excessive current is flowing in the reactor L2, and the control line 30c. And the on-duty of the second semiconductor switching element pair 14 is reduced via the control line 30d.

If it is determined in step S250 that the current value _IL2 is equal to or less than the second threshold current _Ith2 , the reactor detected by the reactor first temperature sensor 16 arranged between the reactor L1 and the reactor L2 in step S270. It is determined whether or not the first temperature value SnsTL1 is higher than the threshold temperature _Tth .

When it is determined in step S270 that the reactor first temperature value SnsTL1 is higher than the threshold temperature _Tth , in step S280, the control unit 11 generates heat in the reactor L1 and an excessive current flows to the reactor L1. That is, it is determined that the reactor current is biased, and in step S281, the control unit 11 reduces the on-duty of the first semiconductor switching element pair 13 via the control line 30a and the control line 30b.

On the other hand, when the reactor first temperature value SnsTL1 is determined to be equal to or less than the threshold temperature _Tth in step S270, it is detected by the reactor second temperature sensor 17 arranged between the reactor L2 and the reactor L3 in step S290. It is determined whether or not the second temperature value SnsTL2 of the reactor is higher than the threshold temperature _Tth .

When it is determined in step S290 that the reactor second temperature value SnsTL2 is higher than the threshold temperature _Thth , in step S300, the control unit 11 generates heat in the reactor L3, and an excessive current flows to the reactor L3. That is, it is determined that the reactor current is biased, and in step S301, the control unit 11 reduces the on-duty of the third semiconductor switching element pair 15 via the control line 30e and the control line 30f.

On the other hand, when it is determined in step S290 that the second temperature value SnsTL2 of the reactor is equal to or less than the threshold temperature _Tth , in step S310, the control unit 11 states that there is no current bias between the reactors of the magnetically coupled reactor 12. to decide.

As described above, according to the power conversion device 300 according to the third embodiment, two current sensors of the power conversion device 100 according to the first embodiment may be provided regardless of the number of reactors, and may be arranged between the plurality of reactors. Based on the temperature value detected by the reactor temperature sensor consisting of one less than the number of reactors, it detects whether or not an excessive current is flowing in one of multiple reactors, so it is a power conversion device. Since the total number of current sensors and reactor temperature sensors can be reduced as a whole, the cost of the power conversion device can be reduced, and the second current sensor that detects the current flowing through the reactor L2 in the central part is obtained. By providing the above, there is also an effect that more accurate protection determination against overheating of the reactor can be realized.

Embodiment 4.
The power conversion device 400 according to the fourth embodiment will be described below.
The circuit configuration of the power conversion device 400 according to the fourth embodiment is the same as that of the power conversion device 200 according to the second embodiment. The power conversion device 400 according to the fourth embodiment is premised on cooling with cooling water, and the control unit 11 is detected by the reactor current value _IL detected by the first current sensor 22 and the first temperature sensor 16 for the reactor. In addition to each temperature value consisting of the reactor first temperature value SnsTL1 and the reactor second temperature value SnsTL2 detected by the reactor second temperature sensor 17, the water temperature SnsTL3 of the cooling water detected by the water temperature detection unit 40 is acquired. ..

In the power conversion device 100 according to the first embodiment, when it is determined whether or not the reactor current flowing in each phase is biased, it is detected by the above-mentioned reactor current value _IL and the first temperature sensor 16 for the reactor. Control was performed using each reactor temperature information of the reactor second temperature value SnsTL2 detected by the reactor first temperature value SnsTL1 and the reactor second temperature sensor 17, but in the power conversion device 400 according to the fourth embodiment, the control is further performed. By using the information of the water temperature _SnsTL3 of the cooling water and the current value IL2 of the second current sensor 23, it is characterized in that the accuracy of protection against overheating of the reactor is improved.

FIG. 18 is a flowchart showing an example of a protection determination algorithm against reactor overheating in the control unit 11 in the power conversion device 400 according to the fourth embodiment.
In the flowchart of FIG. 18, step S241, step S271, and step S291 are added to the flowchart of FIG.

Basically, the control unit 11 acquires the temperature of the water temperature SnsTL3 of the cooling water detected by the water temperature detection unit 40, and the reactor first temperature value SnsTL1 and the reactor second temperature value SnsTL2 are higher than the threshold temperature _Tth . In this case, each temperature value determined to be higher than the threshold temperature _Tth in the next step, that is, the reactor first temperature value SnsTL1 and the reactor second temperature value SnsTL2 and the water temperature SnsTL3 of the cooling water are compared with each other. When it is determined that the temperature difference is higher than the second temperature difference value ΔT _th2 , a protection determination against overheating of the reactor is performed to reduce the on-duty. Hereinafter, the flowchart of FIG. 18 will be specifically described.

First, in step S210, the control unit 11 acquires the reactor current value IL detected by the first current sensor 22 and the current value _IL2 flowing through the reactor _L2 detected by the second current sensor 23, respectively.

Next, in step S220, it is determined whether or not the reactor current value _{IL is larger than the first threshold current Is1 .} If it is determined in step S220 that the reactor current value _IL is larger than the first threshold current _Is 1, an excessive current is flowing through the power conversion device 300 in step S230, so that the control unit 11 is overcurrent. Is determined, and the on / off control operation for each semiconductor switching element pair is stopped.

On the other hand, when it is determined in step S220 that the reactor current value _IL is equal to or less than the first threshold current Is 1, in step _S240 , the control unit 11 controls the reactor first temperature detected by the reactor first temperature sensor 16. Each temperature value of the reactor second temperature value SnsTL2 detected by the value SnsTL1 and the reactor second temperature sensor 17 is acquired.

Next, in step S241, the control unit 11 acquires information on the water temperature SnsTL3 of the cooling water detected by the water temperature detection unit 40.

Next, in step S250, it is determined whether or not the current value IL2 flowing through the reactor _L2 is larger than the second threshold current _Is2 . If it is determined in step S250 that the current value _{IL2 is larger than the second threshold current Itth2 ,} in step S260, the control unit 11 determines that an excessive current is flowing in the reactor L2, and the control line 30c. And the on-duty of the second semiconductor switching element pair 14 is reduced via the control line 30d.

When it is determined in step S250 that the current value _{IL2 flowing through the reactor is equal to or less than the second threshold current Ith2 ,} it is detected by the first temperature sensor 16 for the reactor arranged between the reactor L1 and the reactor L2 in step S270. It is determined whether or not the reactor first temperature value SnsTL1 to be generated is higher than the threshold temperature _Tth .

If it is determined in step S270 that the reactor first temperature value SnsTL1 is higher than the threshold temperature _Tth , in step S271, the temperature difference of the reactor second temperature value SnsTL2 with respect to the water temperature SnsTL3 is the second temperature difference value. It is determined whether or not it is larger than ΔT _th2 .

If it is determined in step S271 that the temperature difference of the second temperature value SnsTL2 of the reactor with respect to the water temperature SnsTL3 is equal to or less than the second temperature difference value ΔT _th2 , in step S310, the control unit 11 controls each of the magnetically coupled reactors 12. It is judged that there is no current bias between the reactors.

On the other hand, if it is determined in step S271 that the temperature difference between the reactor second temperature value SnsTL2 and the water temperature SnsTL3 is larger than the second temperature difference value ΔT _th2 , in step S280, the control unit 11 has the reactor L1. It is determined that the heat is generated and an excessive current is flowing in the reactor L1, that is, the current is biased to the reactor L1, and in step S281, the control unit 11 is set via the control line 30a and the control line 30b. 1 Reduce the on-duty of the semiconductor switching element pair 13.

When the reactor first temperature value SnsTL1 is determined to be equal to or less than the threshold temperature _Tth in step S270, the reactor detected by the reactor second temperature sensor 17 arranged between the reactor L2 and the reactor L3 in step S290. It is determined whether or not the second temperature value SnsTL2 is higher than the threshold temperature _Tth .

If it is determined in step S290 that the second temperature value SnsTL2 of the reactor is equal to or less than the threshold temperature _Tth , in step S310, the control unit 11 determines that there is no current bias between the reactors of the magnetically coupled reactor 12. ..

On the other hand, when it is determined in step S290 that the reactor second temperature value SnsTL2 is higher than the threshold temperature _Tth , in step S291, the temperature difference of the reactor first temperature value SnsTL1 with respect to the water temperature SnsTL3 is the second temperature. It is determined whether or not the difference value is larger than ΔT _th2 .

If it is determined in step S291 that the temperature difference between the cooling water of the reactor first temperature value SnsTL1 and the water temperature SnsTL3 is equal to or less than the second temperature difference value ΔT _th2 , in step S310, the control unit 11 controls each of the magnetically coupled reactors 12. It is judged that there is no current bias between the reactors.

On the other hand, if it is determined in step S291 that the temperature difference between the reactor first temperature value SnsTL1 and the water temperature SnsTL3 is larger than the second temperature difference value ΔT _th2 , in step S300, the control unit 11 controls the reactor L3. Is generating heat, and an excessive current is flowing in the reactor L3, that is, it is determined that the reactor current is biased. In step S301, the control unit 11 determines that the reactor current is biased. The on-duty of the semiconductor switching element pair 15 is reduced.

As described above, according to the power conversion device 400 according to the fourth embodiment, two current sensors of the power conversion device 100 according to the first embodiment may be provided regardless of the number of reactors, and may be arranged between the plurality of reactors. Based on the temperature value detected by the reactor temperature sensor consisting of one less than the number of reactors, it detects whether or not an excessive current is flowing in one of multiple reactors, so it is a power conversion device. Since the total number of current sensors and reactor temperature sensors can be reduced as a whole, the cost of the power conversion device can be reduced, and the second current sensor that detects the current flowing through the reactor L2 in the central part is obtained. And by comparing the temperature value of each reactor temperature sensor with the water temperature of the cooling water, it is possible to realize more accurate overheat protection determination.

Embodiment 5.
The boost converter of the power converter according to the first to fourth embodiments has a three-phase interleave method, but the power converter according to the present disclosure is not limited to this. For example, the boost converter of the power converter has four or more phases of interleaving. It may be configured.
FIG. 19 shows a schematic configuration of the power conversion device 500 according to the fifth embodiment.

In the power conversion device 500 according to the fifth embodiment, in the boost converter having a four-phase interleave configuration, the reactor L1 and the reactor L2 are configured as the first magnetically coupled reactor 12a, and the reactors L3 and the reactor L4 are configured as the second magnetically coupled reactor 12b. The first temperature sensor 16 for the reactor is arranged so as to receive thermal interference between the reactors, that is, between the reactor L1 and the reactor L2, and the second reactor for the reactor so as to receive the thermal interference between the reactor L3 and the reactor L4. The temperature sensor 17 is arranged. Further, a seventh semiconductor switching element 35 and an eighth semiconductor switching element 36 connected to the reactor L4 are provided.

The first current sensor 22 is connected between the positive electrode side of the power storage unit 1 and the magnetically coupled reactor 12, and the current value before the reactor branches, that is, the entire first magnetically coupled reactor 12a and the second magnetically coupled reactor 12b. It is arranged so as to detect the reactor current value _IL which is the sum of the flowing currents.

On the other hand, the third current sensor 24 detects the current value IL2 flowing through the reactor L2 in the first magnetically coupled reactor 12a, and the fourth current sensor 25 detects the current value I _L2 flowing through the reactor L3 in the second magnetically coupled reactor 12b. _L3 is detected.

The current values flowing in the second phase of the reactor L2 and the third phase of the reactor L3 are detected by the third current sensor 24 and the fourth current sensor 25, respectively, and are used in the first phase of the reactor L1 and the fourth phase of the reactor L4. The flowing current value is determined by the reactor first temperature sensor 16 and the reactor second temperature sensor 17. As a result, the number of current sensors is less than or equal to the number of phases of the boost converter, that is, when the number of phases of the boost converter is N, the number of current sensors is N-1 or less, but each reactor generated by an excessive current. It is possible to suppress the heat generation in the engine and the failure caused by the heat generation.

As described above, according to the power conversion device 500 according to the fifth embodiment, the number of current sensors may be smaller than the number of reactors, and the reactor temperature is composed of a number smaller than the number of reactors arranged between the plurality of reactors. Based on the temperature value detected by the sensor, it detects whether or not an excessive current is flowing in one of multiple reactors, so that the total number of current sensors and reactor temperature sensors can be reduced for the entire power converter. Therefore, the effect is that the cost of the power conversion device can be reduced.

Although the control unit 11 is described as a functional block in the configuration of each power conversion device according to the above-described first to fifth embodiments, FIG. 20 shows an example of the configuration as hardware for storing the control unit 11. show. The hardware 800 includes a processor 801 and a storage device 802. Although the storage device is not shown, it includes a volatile storage device such as a random access memory and a non-volatile auxiliary storage device such as a flash memory.

Further, the auxiliary storage device of the hard disk may be provided instead of the flash memory. The processor 801 executes the program input from the storage device 802. In this case, the program is input from the auxiliary storage device to the processor 801 via the volatile storage device. Further, the processor 801 may output data such as a calculation result to the volatile storage device of the storage device 802, or may store the data in the auxiliary storage device via the volatile storage device.

The present disclosure describes various exemplary embodiments and examples, although the various features, embodiments, and functions described in one or more embodiments are those of a particular embodiment. It is not limited to application, but can be applied to embodiments alone or in various combinations.

Therefore, innumerable variations not illustrated are envisioned within the scope of the techniques disclosed herein. For example, it is assumed that at least one component is modified, added or omitted, and further, at least one component is extracted and combined with the components of other embodiments.

1 Current storage unit, 2 Input capacitor, 3 1st semiconductor switching element, 4 2nd semiconductor switching element, 5 3rd semiconductor switching element, 6 4th semiconductor switching element, 7 5th semiconductor switching element, 8 6th semiconductor switching element , 9 Smoothing capacitor, 10 Load, 11 Control unit, 12 Magnetic coupling reactor, 12a 1st magnetic coupling reactor, 12b 2nd magnetic coupling reactor, 13 1st semiconductor switching element pair, 14 2nd semiconductor switching element pair, 15th 3 semiconductor switching element pairs, 16 first temperature sensor for reactor, 17 second temperature sensor for reactor, 20 input voltage detection circuit, 21 output voltage detection circuit, 22 first current sensor, 23 second current sensor, 24 third current Sensor, 25 4th current sensor, 26, 27, 28 current sensor, 30a to 30f control line, 31a to 31f signal line, 35 7th semiconductor switching element, 36 8th semiconductor switching element, 40 water temperature detector, 100, 110 , 150, 200, 300, 400, 500 power converter, 800 hardware, 801 processor, 802 storage device

Claims (18)

A power conversion device consisting of an N-phase boost converter having N of 3 or more.
A semiconductor switching element pair composed of a plurality of semiconductor switching elements provided corresponding to each of the N phases,
N reactors corresponding to each of the N phases and
N - 1 temperature sensors for reactors, which are arranged between the N reactors, and
A control unit that controls on / off of the semiconductor switching element pair based on the reactor temperature value detected by the reactor temperature sensor.
A power converter equipped with. The power conversion device according to claim 1, further comprising a first current sensor for detecting the total current flowing from the input power supply to the N reactors. The N-phase boost converter has a three-phase interleaved configuration.
The N reactors consist of a first reactor, a third reactor, and a second reactor located between the first reactor and the third reactor.
Among the reactor temperature sensors, the reactor first temperature sensor is provided between the first reactor and the second reactor, and detects the reactor first temperature value.
The electric power according to claim 2, wherein the second temperature sensor for the reactor among the temperature sensors for the reactor is provided between the second reactor and the third reactor and detects the second temperature value of the reactor. Converter. The power conversion device according to claim 3, wherein the reactor is a magnetically coupled reactor. When the current value detected by the first current sensor is larger than the first threshold current,
The power conversion device according to claim 3 or 4, wherein the control unit stops an operation for controlling on / off of the semiconductor switching element pair. The power conversion device according to any one of claims 3 to 5, further comprising a second current sensor for detecting a current value flowing through the second reactor. When the current value detected by the second current sensor is larger than the second threshold current,
The power conversion device according to claim 6, wherein the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the second phase. When the temperature difference between the reactor first temperature value and the reactor second temperature value is larger than the first temperature difference value,
The power conversion device according to any one of claims 3 to 7, wherein the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the first phase. When the temperature difference between the reactor second temperature value and the reactor first temperature value is larger than the first temperature difference value,
The power conversion device according to any one of claims 3 to 7, wherein the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the third phase. When the reactor first temperature value and the reactor second temperature value are higher than the threshold temperature, respectively,
The power conversion device according to any one of claims 3 to 7, wherein the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the second phase. The current value detected by the first current sensor is equal to or less than the first threshold current, and the first temperature value of the reactor is equal to or less than the threshold temperature.
When the second reactor temperature value is equal to or lower than the threshold temperature, the control unit determines that there is no current bias between the reactors.
When the second temperature value of the reactor is higher than the threshold temperature, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the third phase, according to any one of claims 3 to 7. The power conversion device according to item 1. When the reactor first temperature value is higher than the threshold temperature and the reactor second temperature value is equal to or lower than the threshold temperature, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the first phase. death,
The power conversion device according to claim 11, wherein when the reactor second temperature value is higher than the threshold temperature, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the second phase. .. Further equipped with a water temperature detection unit that detects the water temperature of the cooling water,
The current value detected by the first current sensor is equal to or less than the first threshold current, and the first temperature value of the reactor is equal to or less than the threshold temperature.
When the second reactor temperature value is equal to or lower than the threshold temperature, the control unit determines that there is no current bias between the reactors.
When the reactor second temperature value is higher than the threshold temperature, the reactor second temperature value is further compared with the water temperature.
When the temperature difference between the reactor second temperature value and the water temperature is larger than the second temperature difference value, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the third phase.
According to claim 3, when the temperature difference between the reactor second temperature value and the water temperature is equal to or less than the second temperature difference value, the control unit determines that there is no current bias between the reactors. 7. The power conversion device according to any one of 7. When the reactor first temperature value is higher than the threshold temperature, the reactor second temperature value and the threshold temperature are further compared.
When the reactor second temperature value is equal to or less than the threshold temperature, the reactor first temperature value and the water temperature are further compared.
When the temperature difference between the reactor first temperature value and the water temperature is larger than the second temperature difference value, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the first phase.
13. The thirteenth aspect of the present invention is characterized in that when the temperature difference between the reactor first temperature value and the water temperature is equal to or less than the second temperature difference value, the control unit determines that there is no current bias between the reactors. The power converter described. When the reactor second temperature value is higher than the threshold temperature, the reactor first temperature value and the water temperature and the reactor second temperature value and the water temperature are further compared, respectively.
When the temperature difference between the reactor first temperature value and the water temperature and the temperature difference between the reactor second temperature value and the water temperature are both larger than the second temperature difference value, the control unit is a semiconductor corresponding to the second phase. Reduces the on-duty of switching element pairs,
When the temperature difference between the reactor first temperature value and the water temperature and the temperature difference between the reactor second temperature value and the water temperature are both equal to or less than the second temperature difference value, the control unit has a current bias between the reactors. The power conversion device according to claim 14, wherein the power conversion device is determined to be absent. When the current value detected by the first current sensor is equal to or less than the first threshold current and the current value detected by the second current sensor is larger than the second threshold current, the control unit is in the second phase. Reduces the on-duty of the corresponding semiconductor switching element pair,
When the current value detected by the second current sensor is equal to or less than the second threshold current, the reactor first temperature value and the threshold temperature are further compared.
When the first temperature value of the reactor is higher than the threshold temperature, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the first phase.
When the reactor first temperature value is equal to or lower than the threshold temperature, the reactor second temperature value is further compared with the threshold temperature.
When the second temperature value of the reactor is larger than the threshold temperature, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the third phase.
The power conversion device according to claim 6 or 7, wherein when the reactor second temperature value is equal to or lower than the threshold temperature, the control unit determines that there is no current bias between the reactors. Further equipped with a water temperature detection unit that detects the water temperature of the cooling water,
When the current value detected by the first current sensor is equal to or less than the first threshold current and the current value detected by the second current sensor is higher than the second threshold current, the control unit is in the second phase. Reduces the on-duty of the corresponding semiconductor switching element pair,
When the current value detected by the second current sensor is equal to or less than the second threshold current, the reactor first temperature value and the threshold temperature are compared.
When the reactor first temperature value is higher than the threshold temperature, the reactor second temperature value and the water temperature are further compared.
When the temperature difference between the reactor second temperature value and the water temperature is larger than the second temperature difference value, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the first phase.
6. 7. The power conversion device according to 7. When the reactor first temperature value is equal to or lower than the threshold temperature, the reactor second temperature value is compared with the threshold temperature.
When the reactor second temperature value is higher than the threshold temperature, the reactor first temperature value and the water temperature are further compared.
When the temperature difference between the reactor first temperature value and the water temperature is larger than the second temperature difference value, the control unit reduces the on-duty of the semiconductor switching element pair corresponding to the third phase.
17 is characterized in that, when the temperature difference between the reactor first temperature value and the water temperature is equal to or less than the second temperature difference value, the control unit determines that there is no current bias between the reactors. The power converter described.

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