JP7032099B2 - Analytical device, analysis method, program - Google Patents

Description

The present invention relates to an analysis device, an analysis method, and a program.

The technique of forming a film on a film-deposited object is used in many technical fields. As an example, in order to improve wear resistance, low foreign matter adhesion, and slidability of steam turbine blades, compressor wheels, etc., those manufacturers use a film deposition deposition device to apply a film-deposited ceramic coating, etc. by chemical vapor deposition. Do to the target. The related technique is disclosed in Patent Document 1.

Japanese Unexamined Patent Publication No. 2003-281194

By the way, it takes a lot of labor to set the physical property value of the film-forming film to be applied to the film-deposited object to a desired value. The film property value is, for example, the hardness, Young's modulus, film formation rate, etc. of the film-formed surface film. There is a demand for a technique that can reduce the labor required to apply the physical property value of the film-forming film applied to the film-deposited object to a desired value.

Therefore, an object of the present invention is to provide an analysis device, an analysis method, and a program that solve the above-mentioned problems.

According to the first aspect of the present invention, in the analysis device, the film-forming vapor deposition apparatus uses the control parameters of the selected film-forming vapor deposition apparatus to deposit the film-forming vapor film on the simulated member of the film-forming vapor deposition target in the film-forming vapor-depositing space. The control physical quantity analysis unit that analyzes the physical amount of the film-forming vapor deposition factor in a predetermined vicinity region corresponding to a plurality of measurement points of the film-forming vapor deposition target and the film-forming vapor deposition apparatus are the film-forming vapor deposition targets. A film property value acquisition unit that acquires the physical property values of the film-forming film at the plurality of measurement points of the simulated member when the film-forming vapor deposition is performed on the simulated member, and the formation corresponding to the analysis of the physical quantity a plurality of times. It is characterized by including a correlation expression derivation unit that analyzes the correlation with the physical property value of the film film and derives the correlation formula between the physical quantity of the shape corresponding to the measurement point and the physical property value of the film film. do.

Further, the above-mentioned analysis device uses a new control parameter that can be expected to form a predetermined film film selected based on the correlation between the analysis result of the physical quantity and the physical property value of the film film film corresponding to the analysis result. The physical quantity of the film-forming vapor deposition factor in each of the predetermined neighborhood regions corresponding to the measurement points is subjected to the analysis processing, the physical quantity obtained as a result is substituted into the correlation equation, and the film-forming vapor deposition is performed by the new control parameter. The apparatus may include an estimation unit that estimates the physical property value of the film-forming film at the measurement point when the simulated member to be film-deposited is film-deposited.

Further, the above-mentioned analysis device may include a control parameter specifying unit that specifies a control parameter that forms the predetermined film formation based on the estimation process that is repeatedly performed by changing the new control parameter.

Further, in the above-mentioned analysis apparatus, the film property value acquisition unit acquires each of the different physical property values of the film-forming film, and the correlation equation derivation unit derives the correlation equation for each of the different physical characteristics of the film-forming film. It's okay.

Further, in the above-mentioned analysis device, the control physical quantity analysis unit changes the control parameter, and each time the control parameter is changed, the film-deposited film-deposited device becomes a simulated member to be deposited-deposited in the film-deposited film-deposited space. Analysis processing of the physical quantity of the film-deposited factor may be performed in a predetermined vicinity region corresponding to the plurality of measurement points of the film-deposited target when the film-deposited film is vapor-deposited.

Further, in the above-mentioned analysis device, the physical amount of the film-deposited factor is plasma physical quantity, the film-forming is diamond-like carbon, and the controlled physical quantity analysis unit simulates that the film-deposited device is the target of film-deposited deposition. When diamond-like carbon is deposited on a member by plasma CVD (Chemical Vapor Deposition), the plasma physical quantity may be analyzed in a predetermined vicinity region corresponding to a plurality of measurement points to be deposited.

According to the second aspect of the present invention, in the analysis method, the film-forming vapor deposition apparatus uses the control parameters of the selected film-forming vapor-depositing apparatus to deposit the film-forming vapor film on the simulated member of the film-forming vapor deposition target in the film-forming vapor-depositing space. Is performed, the physical amount of the film-forming vapor deposition factor is analyzed in a predetermined vicinity region corresponding to a plurality of measurement points of the film-forming vapor deposition target, and the film-forming vapor deposition apparatus becomes a simulated member of the film-forming vapor deposition target. The physical property values of the film-forming film at the plurality of measurement points of the simulated member when the film is vapor-deposited are acquired, and the correlation between the analysis of the physical quantity a plurality of times and the corresponding physical property values of the film-forming film is analyzed. The correlation equation between the physical quantity and the physical property value of the film-forming film for the shape corresponding to the measurement point may be derived.

Further, the above-mentioned analysis method uses a new control parameter that can be expected to form a predetermined film film selected based on the correlation between the analysis result of the physical quantity and the physical property value of the film film film corresponding to the analysis result. The physical quantity of the film-forming vapor deposition factor in each of the predetermined neighborhood regions corresponding to the measurement points is subjected to the analysis processing, the physical quantity obtained as a result is substituted into the correlation equation, and the film-forming vapor deposition is performed by the new control parameter. When the apparatus performs film formation vapor deposition on the simulated member to be film-deposited, the physical property value of the film-forming film at the measurement point may be estimated.

Further, in the above-mentioned analysis method, the control parameter for forming the predetermined film formation may be specified based on the estimation process repeatedly performed by changing the new control parameter.

Further, in the above-mentioned analysis method, the physical property values for different film formations may be acquired, and the correlation equation for each of the physical properties of the different film formations may be derived.

Further, the above-mentioned analysis method is a case where the control parameter is changed and the film-deposited film deposition apparatus performs film-forming vapor deposition on a simulated member to be deposited-deposited in the film-deposited film-deposited space each time the control parameter is changed. It may be characterized by performing analysis processing of the physical amount of the film-deposited film-deposited factor in a predetermined vicinity region corresponding to the plurality of measurement points of the film-deposited film-deposited object.

Further, in the above-mentioned analysis method, the physical amount of the film-deposited factor is plasma physical quantity, the film-forming is diamond-like carbon, and the film-forming vapor deposition apparatus plasmas diamond-like carbon into the simulated member to be deposited. When film-deposited by CVD (Chemical Vapor Deposition), the plasma physical quantity may be analyzed in a predetermined vicinity region corresponding to a plurality of measurement points of the film-deposited target.

According to the third aspect of the present invention, the program uses the computer of the analysis device to simulate the film-forming vapor deposition target in the film-forming vapor deposition space by the film-forming vapor deposition apparatus using the control parameters of the selected film-forming vapor deposition apparatus. The film-forming vapor deposition apparatus, which is a controlled physical quantity analysis means for analyzing the physical quantity of the film-forming vapor deposition factor in a predetermined vicinity region corresponding to a plurality of measurement points of the film-forming vapor deposition target when the film-forming vapor deposition is performed on a member. A film property value acquisition means for acquiring the physical property values of the film-forming film at the plurality of measurement points of the simulated member when the film-forming vapor deposition is performed on the simulated member to be film-deposited, and the analysis and correspondence of the physical quantity a plurality of times. To function as a correlation formula deriving means for deriving a correlation formula between the physical quantity of the shape corresponding to the measurement point and the physical property value of the film-forming film by analyzing the correlation with the physical property value of the film-forming film. It is characterized by.

The above-mentioned program is a new control parameter that can be expected to form a predetermined film formation selected by the computer based on the correlation between the analysis result of the physical quantity and the physical property value of the film-forming film corresponding to the analysis result. The physical quantity of the film-forming vapor deposition factor in each of the predetermined neighboring regions corresponding to the measurement points is subjected to the analysis processing, and the physical quantity obtained as a result is substituted into the correlation equation, and the new control parameter is used. The film-forming vapor deposition apparatus may function as an estimation means for estimating the physical property value of the film-forming film at the measurement point when the film-forming vapor deposition apparatus performs film-forming vapor deposition on the simulated member to be film-deposited.

The above-mentioned program further causes the computer to function as a control parameter specifying means for specifying a control parameter for forming the predetermined film formation based on the estimation process repeated by changing the new control parameter. It's okay.

In the above program, the film physical property value acquisition means may acquire the physical characteristic values of different film formations, and the correlation equation derivation means may derive the correlation equation for each of the different film formations.

In the above program, the control physical quantity analysis means changes the control parameter, and each time the control parameter is changed, the film-deposited film deposition apparatus deposits a film-deposited film on a simulated member to be film-deposited in the film-deposited film-deposited space. The physical quantity of the film-deposited film-deposited factor may be analyzed in a predetermined vicinity region corresponding to the plurality of measurement points to be deposited.

In the above program, the physical amount of the film-deposited factor is plasma physical quantity, the film-forming is diamond-like carbon, and the controlled physical quantity analysis means is such that the film-deposited device is used as a simulated member to be deposited. When diamond-like carbon is deposited by plasma CVD (Chemical Vapor Deposition), the plasma physical quantity may be analyzed in a predetermined vicinity region corresponding to a plurality of measurement points to be deposited.

According to the present invention, it is possible to reduce the labor for applying the physical property value of the film-forming film to be applied to the film-deposited object to a desired value.

It is a hardware block diagram which shows the structure of the analysis apparatus by one Embodiment of this invention. It is a functional block diagram of the analysis apparatus by one Embodiment of this invention. It is the first figure which shows the processing flow of the analysis apparatus by one Embodiment of this invention. It is a second figure which shows the processing flow of the analysis apparatus by one Embodiment of this invention. It is a figure which shows the analysis result table by one Embodiment of this invention.

Hereinafter, the analysis apparatus according to the embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a hardware configuration diagram showing a configuration of an analysis device according to the same embodiment.
As shown in this figure, the analysis device 1 is a computer including a CPU 101, a ROM 102, a RAM 103, an HDD 104, a monitor 105, an interface 106, and the like. The analysis device 1 may be connected to the film deposition deposition device 100 by communication.

FIG. 2 is a functional block diagram of the analysis device.
The CPU 101 of the analysis device 1 executes an analysis program stored in the HDD 104 or the like based on the operation of the analyst. When the analysis device 1 executes the analysis program, the analysis device 1 includes a control unit 11, a control physical quantity analysis unit 12, a film physical property value acquisition unit 13, a correlation expression derivation unit 14, an estimation unit 15, and a control parameter identification unit 16. Each functional part is equipped.

The control unit 11 controls each functional unit of the analysis device 1.
The control physical quantity analysis unit 12 analyzes the physical quantity of the film-forming vapor deposition factor in a predetermined vicinity region corresponding to a plurality of measurement points to be deposited and vapor-deposited by using the control parameters of the selected film-forming vapor deposition apparatus 100. The film-forming vapor deposition apparatus 100 performs film-forming vapor deposition on the simulated member to be film-deposited. In the present embodiment, the target of film formation and vapor deposition is, for example, mechanical parts such as steam turbine blades, compressor wheels, steam turbine dynamic and static blades, supercharger parts, gears, and bearings. Further, in the present embodiment, the physical quantity of the film forming vapor deposition factor is a plasma physical quantity, and the film formed is diamond-like carbon (DLC). The control physical quantity analysis unit 12 corresponds to a plurality of measurement points of the film deposition vapor deposition target when the film deposition vapor deposition apparatus 100 deposits the DLC on the simulated member to be film-deposited by the plasma CVD (Chemical Vapor Deposition) method. The plasma physical quantity is analyzed in a predetermined vicinity region.

The film formation property value acquisition unit 13 acquires the physical property values of the film formed at a plurality of measurement points of the simulated member when the film formation vapor deposition apparatus 100 performs the film formation vapor deposition on the simulated member to be deposited. For example, the film physical property values at a plurality of measurement points provided on the simulated member are actually measured by the analyst, and these values are acquired via the interface 106.
The correlation equation derivation unit 14 analyzes the correlation between the analysis of the physical quantity a plurality of times and the corresponding film physical property value, and derives the correlation equation between the physical quantity and the film physical property value for the shape corresponding to the measurement point.

The estimation unit 15 corresponds to the measurement point using a new control parameter that can be expected to form a predetermined film formation selected based on the correlation between the analysis result of the plasma physical quantity and the film physical property value corresponding to the analysis result. The plasma physical quantity of the film-forming vapor deposition factor in each of the neighboring regions of is analyzed. The estimation unit 15 substitutes the physical quantity obtained as a result into the correlation equation, and the film formation vapor deposition apparatus 100 performs film formation vapor deposition on the simulated member to be film-deposited by the new control parameter. Performs physical property value estimation processing.
The control parameter specifying unit 16 specifies control parameters that form a predetermined film formation based on repeated estimation processes by changing the values of each control parameter.

FIG. 3 is the first diagram showing the processing flow of the analyzer.
FIG. 4 is a second diagram showing a processing flow of the analyzer.
Next, the processing flow of the analysis device 1 will be described step by step.
The analyst creates three-dimensional shape data of a simulated member whose shape matches or is similar to that of the film-deposited target for which the DLC is actually deposited and vapor-deposited, and the simulated member. The analyst identifies the measurement point in the simulated member. The measurement location may be a location having a complicated shape or a location where it is difficult to analyze the film-deposited film. The measurement points are a plurality of points such as 7 points in the present embodiment. The analyst inputs the three-dimensional shape data of the simulated member and the coordinates of the measurement point specified in the three-dimensional shape data into the analysis device 1. The analysis device 1 executes an analysis program based on the operation of the analyst. The analyst also sets the value of each control parameter of the film forming vapor deposition apparatus 100 for each of the first case to the nth case and inputs the value to the analyzer 1. Each control parameter includes the type of gas injected by the film forming vapor deposition apparatus 100, the pressure of the injected gas, the flow rate of the gas, and the electric power when the film forming vapor deposition apparatus 100 forms a DLC by the plasma CVD method. It is a value such as gas injection time. That is, the analyst sets the type of gas, the pressure of the gas to be injected, the flow rate of the gas, the electric power, and the injection time of the gas for each of the first case to the nth case, and inputs them to the analysis device 1. Then, the analyst instructs the analysis device 1 to start the operation. The analysis device 1 inputs an instruction to start operation (step S101).

Based on the instruction to start the operation, the control physical quantity analysis unit 12 of the analysis device 1 is a plasma physical quantity when the film formation vapor deposition apparatus 100 performs film formation vapor deposition on the simulated member to be film-deposited in the film deposition vapor deposition space. Then, the analysis processing of the plasma physical quantity of the film-deposited film-deposited factor in a predetermined vicinity region corresponding to a plurality of measurement points to be deposited-deposited is performed for each control parameter of the first case to the n-th case and the three-dimensional shape data of the simulated member. Is used to perform parallel processing for the first case to the nth case (step S102). The predetermined neighborhood region corresponding to a plurality of measurement points to be deposited and vapor-deposited may indicate the same location of the measurement location, or at a predetermined coordinate or region in the film-forming vapor deposition space separated from the measurement location by a predetermined distance. There may be. The plasma physical quantity is specifically the number of ion flux C atoms, the number of ion flux H atoms, the number of radical flux C atoms, the number of radical flux H atoms, the ion energy RF pulse, the ion energy high voltage pulse, and the ion C / H atomic ratio. RF pulse, ion C / H atomic ratio high voltage pulse, etc. As a method for analyzing the physical quantities of these film-forming vapor deposition factors, a known technique for analyzing plasma behavior and neutral particle behavior is used. The analyzer 1 uses the plasma physical quantity of each measurement point obtained by the analysis as an identifier indicating the measurement point, information indicating the shape of the measurement point, and the value of each control parameter (gas type, pressure of the injected gas, the gas). (Flow rate, power, gas injection time), and record in the analysis result table of the storage unit in association with the identifier of the three-dimensional shape data and the case number. The information indicating the shape of the measurement location may be the characteristics of the shape of the measurement location (information indicating the shape of the convex portion, the tip portion, etc.), the dimensions, and the like. When the control physical quantity analysis unit 12 analyzes the plasma physical quantity for each measurement point for the first case to the nth case, the process ends. An example of the case where the processing of steps S101 to S102 and the processing of the following steps S201 and subsequent steps are performed by the analysis device 1 is described, but the processing corresponding to each flow is performed by different devices. You may do it. More specifically, the processing of steps S101 and S102 may be performed by a high-performance computer with hardware resources. As a result, the processing of steps S101 and S102 can be performed at high speed. The first device that performs the processes of steps S101 and S102 and the second device that performs the processes of the following steps S201 to S208 may be collectively referred to as an analysis device 1.

The analyst controls the film-forming vapor deposition apparatus 100 by each control parameter of each of the first case to the n-th case, and by combining the respective control parameters, the film-forming vapor deposition of DLC is performed on the simulated member to be deposited. Actually apply. The analyst measures the physical characteristics of the film at each measurement point of the DLC formed on the simulated member for each of the first case to the nth case. Specifically, the film property values are the film formation rate, the film thickness, the hardness, the Young's modulus, and the like. The analyst acquires these film physical characteristic values for each combination of the control parameters of the first case to the nth case and inputs them to the analysis device 1. The film physical characteristic value acquisition unit 13 inputs each film property value of the first case to the nth case from the analyst via a recording medium, directly, or via a network (step S201). The film physical property value acquisition unit 13 associates the film physical property value with the case number, the value of each control parameter, the identifier of the three-dimensional shape data, the identifier of the measurement point, the information indicating the shape of the measurement point, and the value of each plasma physical quantity. The process of recording in the analysis result table is performed for each combination of control parameters. As a result, the analysis device 1 generates an analysis result table as shown in FIG. 5 (step S202).

FIG. 5 is a diagram showing an analysis result table.
As shown in FIG. 5, the analysis result table includes a case number, an identifier of three-dimensional shape data, an identifier of a measurement point, and each control parameter (gas type, injection gas pressure, gas flow rate, electric power, gas). Value of injection time), each plasma physical quantity (ion flux C atom number, ion flux H atom number, radical flux C atom number, radical flux H atom number, ion energy RF pulse, ion energy high voltage pulse, ion C / H atom The specific RF pulse, the ion C / H atomic ratio high voltage pulse) value, the film physical property a (hardness) value, the film property b (Young rate) value, the film property c (deposition rate), etc. are associated with each other. Remember.

The analyst inputs the completion of generation of the analysis result table to the analysis device 1. Further, the analyst instructs the analysis device 1 to derive the correlation equation. Then, the control unit 11 instructs the correlation expression derivation unit 14 to start the derivation of the correlation expression. The correlation expression derivation unit 14 acquires the information recorded in the analysis result table in association with the identifier of one three-dimensional shape data. The correlation expression derivation unit 14 is associated with the identifier of one measurement point and the value of each plasma physical quantity of the measurement point associated with the identifier of the measurement point based on the information recorded in the analysis result table associated with the identifier of one three-dimensional shape data. And a correlation equation with a certain value of the film physical properties is generated by performing multiple regression analysis (step S203). As a result, the correlation expression derivation unit 14 derives a correlation expression between the plasma physical quantity and the film property value for a certain film property at a certain measurement point. Similarly, the correlation equation derivation unit 14 derives each correlation equation between the plasma physical quantity and the film physical property value for all the film physical properties at all the measurement points. The correlation expression derivation unit 14 uses the correlation equation of the plasma physical quantity and the film property value for all the film physical properties at all the measurement points as the three-dimensional shape data identifier, the measurement point identifier, and the information indicating the shape of the measurement point. , Record for each film property value.

According to the above-mentioned processing, the analysis device 1 analyzes each correlation equation between the plasma physical quantity and the film physical property value for a plurality of film physical properties at a plurality of measurement points, and analyzes the plasma physical quantity using a simulated member to be deposited. It can be derived from the result of the treatment and the result of film formation vapor deposition on the simulated member to be film-deposited.

When the derivation of the correlation equation is completed, the analyst identifies new values of each control parameter that can be estimated to be expected to form a desired film formation at each measurement point of the actual machine to be deposited. For example, the analyst confirms the analysis result table and estimates and specifies the value of the control parameter so that the predetermined film physical characteristics become a predetermined value. The analysis device 1 accepts the input of the values of the specified control parameters from the analyst (step S204). The analyst also inputs the identifier of the three-dimensional shape data indicating the simulated member to be deposited and the identifier of the desired measurement point, the identifier of the desired film physical characteristics, and the instruction to start the analysis into the analysis device 1. do. Then, the control physical quantity analysis unit 12 of the analysis device 1 performs the same processing as the processing of step S102 to obtain each plasma physical quantity of the film formation vapor deposition factor in a predetermined vicinity region corresponding to the measurement point desired by the analyst in the film deposition deposition target. Calculate (step S205). The control physical quantity analysis unit 12 outputs each calculated plasma physical quantity to the estimation unit 15.

The analysis device 1 may calculate new values of each control parameter that can be expected to form a desired film formation input by the analysis device 1 in step S204. For example, the analysis device 1 inputs from the analyst an identifier of the three-dimensional shape data to be deposited and deposited, an identifier of a desired measurement point, an identifier of a desired film physical property, and an expected value for the film property. The analysis device 1 inputs the identifier of the three-dimensional shape data to be deposited and the identifier of the desired measurement point, and the film property value recorded in the analysis result table corresponding to the identifier of the desired film property property. The value of each control parameter may be calculated based on the correlation with the expected value for the physical characteristics of the film.

The estimation unit 15 reads the correlation formula stored in the analysis device 1 in association with the identifier of the three-dimensional shape data input from the analyst, the identifier of the desired measurement location, and the identifier of the desired film physical characteristics. The estimation unit 15 inputs each plasma physical quantity acquired from the control physical quantity analysis unit 12 and the value of each control parameter input from the analyst and used for calculating the plasma physical quantity into the correlation formula, and inputs the value of each control parameter to the predetermined location desired by the analyst. The physical property value of the film in the above is calculated (step S206). If the film physical properties desired by the analyst are all, for example, film forming speed, film thickness, hardness, Young's modulus, etc., the estimation unit 15 uses the correlation equations for all of them to determine the film property values. It may be calculated. The estimation unit 15 outputs the calculated physical characteristic value of the film to the monitor 105 of the analysis device 1 (step S207).

The analyst confirms the film physical characteristic value output to the monitor 105 and confirms whether or not it is within the desired value. The analyst confirms the analysis result table, specifies the value of the control parameter so that the predetermined film physical characteristics become a predetermined value, and inputs the value to the analysis device 1. Therefore, the film physical property values actually analyzed by the analyzer 1 may be close to the values desired by the analyst. However, the analyst confirms the film physical characteristic value output to the monitor 105, and if it does not fall within the desired value, the value of each control parameter input in the analysis result table and the calculation of the plasma physical quantity in step S205 again. Based on the above, the value of the changed control parameter is specified so that the predetermined film physical properties become a predetermined value. The analysis device 1 receives an input of information as to whether or not the film physical property value is within a predetermined range from the analyst. The analysis device 1 determines whether or not the film physical characteristic value is within a predetermined range based on the input (step S208). When the analysis device 1 receives the information indicating that the film physical property value is within the predetermined range, the analysis device 1 ends the process. When the analysis device 1 receives the information indicating that the film physical property value is not within the predetermined range, the analysis device 1 repeats the process from step S204 using the changed control parameter value.

The analyst confirms the film physical characteristic value output to the monitor 105, and if it is within the desired value, inputs an operation to end the analysis. The analyst uses the film-forming vapor deposition apparatus 100 to perform an operation of causing the actual film-depositing target to perform film-forming vapor deposition. At this time, the analyst inputs the value of each control parameter when the film physical property value is within a desired value to the film forming vapor deposition apparatus 100, and instructs the film forming vapor deposition apparatus 100 to control the film forming vapor deposition. As a result, in the actual film formation vapor deposition target in which the film formation vapor deposition is performed by the film formation vapor deposition apparatus 100, the desired film physical properties at the desired measurement points become the values desired by the analyst. The film-forming vapor deposition apparatus 100 may input from the analysis apparatus 1 each control parameter estimated that the physical property value of the coating film falls within a predetermined range, based on the operation of the analyst, via the communication line.

Here, as an example of the above-mentioned film deposition vapor deposition, ceramic coating by chemical vapor deposition is assumed. When chemical vapor deposition such as ceramic coating on a film-deposited object is performed on a film-forming object with a complicated shape, the value of the film physical properties (film pressure, hardness, etc.) of the ceramic or the like is desired at each measurement point of the film-forming object. It is desirable that the value is. However, in order to obtain the desired film property value, the analyst must repeatedly perform a film formation test and evaluation on the film formation target to narrow down the appropriate film formation conditions, and this narrowing down requires labor. Was. In general, the equipment for a film forming test on a large part is limited, and the material cost, the material cost, the film forming man-hour, and the like when performing the film forming test are large. Therefore, there is a problem that it takes time and cost to narrow down the conditions by the repeated test.

Further, the film forming vapor deposition on the film forming target by chemical vapor deposition is performed by controlling the control parameters (for example, the type of gas, the pressure of the injected gas, the flow rate of the gas, the electric power, and the injection time of the gas) for controlling the film forming vapor deposition apparatus 100. ) Is many. In many cases, it has not been clarified how these control parameters affect film formation. Therefore, based on the experience of the analyst and the knowledge so far, the film formation test is performed by changing the control parameters, and the control parameters are evaluated by evaluating the physical property values (hardness, Young's modulus, film formation speed) of the film-formed surface coating film. Optimization is carried out. On the other hand, software that models the plasma phenomenon of the chemical vapor deposition process and predicts the physical quantity of plasma by simulation and analysis without actually performing a film formation test has been released. However, although these softwares can analyze the prediction of the physical characteristics of the film such as the film thickness, none of them can predict the physical properties of the film such as the hardness and Young's modulus. That is, it is difficult to unconditionally predict film characteristics such as film thickness, hardness, and Young's modulus by analysis alone because the control parameters that affect the film thickness differ depending on the material to be deposited. In addition, even if the film material to be filmed is the same, if the shape of the component to be filmed is changed, the physical characteristics of the film to be filmed may change, so the conditions are set again. It may be necessary to perform a membrane test / evaluation. The above-mentioned analysis device 1 solves these problems.

That is, the analysis device 1 can easily analyze the value of each control parameter of the film formation vapor deposition apparatus 100 so that the value of the film physical properties at a predetermined position with respect to the film formation vapor deposition target desired by the analyst becomes a desired value by analysis. ..

For a new film-forming vapor deposition target having a shape different from that of the simulated member to be film-deposited used by the analysis device 1 for deriving the correlation equation, a film-forming physical property value of a desired value is formed at a desired measurement point. The analysis device 1 can also be used to derive the values of each control parameter.
In this case, the analyst confirms the analysis result table and specifies information indicating the shape of the measurement point similar to the desired measurement point so that the film physical property value of the new film-deposited target becomes the desired value. Among the values of each control parameter recorded in association with the information indicating the shape, the analyst determines the value of each control parameter when the film physical characteristic value is close to the desired value. It is estimated to be the value of the control parameter so as to be a predetermined value, and is input to the analysis device 1. As a result, the analysis device 1 can be used to derive the values of each control parameter so that the film formation property values of desired values are formed at the desired measurement points for the new film-deposited target. ..

The above-mentioned analysis device 1 has a computer system inside. The process of each process described above is stored in a computer-readable recording medium in the form of a program, and the process is performed by the computer reading and executing this program. Here, the computer-readable recording medium means a magnetic disk, a magneto-optical disk, a CD-ROM, a DVD-ROM, a semiconductor memory, or the like. Further, this computer program may be distributed to a computer via a communication line, and the computer receiving the distribution may execute the program.

Further, the above program may be for realizing a part of the above-mentioned functions. Further, a so-called difference file (difference program) may be used, which can realize the above-mentioned function in combination with a program already recorded in the computer system.

1 ... Analysis device 11 ... Control unit 12 ... Control physical quantity analysis unit 13 ... Film physical property value acquisition unit 14 ... Correlation expression derivation unit 15 ... Estimating unit 16 ... Control parameter specification Department

Claims (18)

Multiple measurement points of the film-deposited target when the film-deposited device performs film-deposited on a simulated member of the film-deposited object in the film-deposited space using the control parameters of the selected film-deposited device. A control physical quantity analysis unit that performs analysis processing of the plasma physical quantity of the film-formed vapor-film deposition factor in a predetermined vicinity region corresponding to the above for each case showing a combination of a plurality of different values of the control parameters .
The film forming speed of the film- forming film at the plurality of measurement points of the simulated member when the film-forming vapor deposition apparatus performs film-forming vapor deposition on the simulated member to be deposited-deposited using the control parameters for each front case . A film property value acquisition unit that acquires a physical property value indicating at least one of film thickness, hardness, and Young's modulus, and a film property value acquisition unit.
The correlation between the analysis of the plasma physical quantity a plurality of times and the physical property value of the film-forming film corresponding to the analysis is analyzed, and the correlation formula between the plasma physical quantity and the physical property value of the film-forming film for the shape corresponding to the measurement point is obtained. Correlation expression derivation part to derive and
An analyzer equipped with. Corresponds to the measurement point using a new control parameter that can be expected to form a predetermined film film selected based on the correlation between the analysis result of the plasma physical quantity and the physical property value of the film film film corresponding to the analysis result. The plasma physical quantity of the film-forming vapor deposition factor in each of the predetermined neighboring regions is subjected to the analysis processing, the plasma physical quantity obtained as a result is substituted into the correlation equation, and the film-forming vapor deposition apparatus is formed by the new control parameter. An estimation unit that estimates the physical property value of the film-forming film at the measurement location when film-forming vapor deposition is performed on the simulated member to be film-deposited.
The analysis apparatus according to claim 1. A control parameter specifying unit that specifies a control parameter that forms the predetermined film formation based on the estimation process that is repeatedly performed by changing the new control parameter.
2. The analysis apparatus according to claim 2. The film property value acquisition unit acquires each of the different physical property values of the film film.
The analysis device according to any one of claims 1 to 3, wherein the correlation equation derivation unit derives the correlation equation for each of the different physical properties of the film-forming film. The control physical quantity analysis unit changes the control parameter, and each time the control parameter is changed, the film-deposited film deposition apparatus performs film-forming vapor deposition on a simulated member to be deposited-deposited in the film-deposited film-deposited space. The analysis device according to any one of claims 1 to 4, respectively, which analyzes the plasma physical quantity of the film-deposited film-deposited factor in a predetermined vicinity region corresponding to a plurality of measurement points to be deposited. The film-forming film is diamond-like carbon and is
The controlled physical quantity analysis unit has a plurality of measurement points of the film-deposited target when the film-deposited device deposits diamond-like carbon on the simulated member of the film-deposited object by plasma CVD (Chemical Vapor Deposition). The analysis apparatus according to any one of claims 1 to 5, which performs analysis processing of the plasma physical quantity in a predetermined vicinity region corresponding to the above. Multiple measurement points of the film-deposited target when the film-deposited device performs film-deposited on a simulated member of the film-deposited object in the film-deposited space using the control parameters of the selected film-deposited device. The analysis process of the plasma physical quantity of the film-deposited film deposition factor in a predetermined vicinity region corresponding to the above is performed for each case showing a combination of a plurality of different values of the control parameters .
The film forming speed of the film- forming film at the plurality of measurement points of the simulated member when the film-forming vapor deposition apparatus performs film-forming vapor deposition on the simulated member to be deposited-deposited using the control parameters for each front case . Obtain a physical property value indicating at least one of film thickness, hardness, and Young's modulus, and obtain
The correlation between the analysis of the plasma physical quantity a plurality of times and the physical property value of the film-forming film corresponding to the analysis is analyzed, and the correlation formula between the plasma physical quantity and the physical property value of the film-forming film for the shape corresponding to the measurement point is obtained. Analysis method to derive. Corresponds to the measurement point using a new control parameter that can be expected to form a predetermined film film selected based on the correlation between the analysis result of the plasma physical quantity and the physical property value of the film film film corresponding to the analysis result. The plasma physical quantity of the film-forming vapor deposition factor in each of the predetermined neighboring regions is subjected to the analysis processing, the plasma physical quantity obtained as a result is substituted into the correlation equation, and the film-forming vapor deposition apparatus is formed by the new control parameter. The analysis method according to claim 7, wherein the physical property value of the film-forming film at the measurement point is estimated when the film-forming film is deposited on the simulated member to be film-deposited. The analysis method according to claim 8, further comprising specifying a control parameter for forming the predetermined film formation based on the estimation process repeated by changing the new control parameter. Obtain each of the above physical property values for different film formations,
The analysis method according to any one of claims 7 to 9, which derives the correlation equation for each of the different physical properties of the film-forming film. When the control parameter is changed and each time the control parameter is changed, the film-forming vapor deposition apparatus performs film-forming vapor deposition on a simulated member to be deposited-deposited in the film-forming vapor deposition space. The analysis method according to any one of claims 7 to 10, respectively, which analyzes the plasma physical quantity of the film-deposited film-deposited factor in a predetermined vicinity region corresponding to a plurality of measurement points. The film-forming film is diamond-like carbon and is
When the film-depositing apparatus deposits diamond-like carbon on a simulated member to be deposited and vapor-deposited by plasma CVD (Chemical Vapor Deposition), a predetermined vicinity region corresponding to a plurality of measurement points of the film-deposited object. The analysis method according to any one of claims 7 to 11, wherein the plasma physical quantity analysis process is performed. The computer of the analyzer,
Multiple measurement points of the film-deposited target when the film-deposited device performs film-deposited on a simulated member of the film-deposited object in the film-deposited space using the control parameters of the selected film-deposited device. A controlled physical quantity analysis means for performing analysis processing of the plasma physical quantity of the film-formed vapor-film deposition factor in a predetermined vicinity region corresponding to the above for each case showing a combination of a plurality of different values of the control parameters .
The film forming speed of the film- forming film at the plurality of measurement points of the simulated member when the film-forming vapor deposition apparatus performs film-forming vapor deposition on the simulated member to be deposited-deposited using the control parameters for each front case . A film physical property value acquisition means for acquiring a physical property value indicating at least one of film thickness, hardness, and Young's modulus, and
The correlation between the analysis of the plasma physical quantity a plurality of times and the physical property value of the film-forming film corresponding to the analysis is analyzed, and the correlation formula between the plasma physical quantity and the physical property value of the film-forming film for the shape corresponding to the measurement point is obtained. Correlation expression derivation means to derive,
A program that functions as. Moreover,
Corresponds to the measurement point using a new control parameter that can be expected to form a predetermined film film selected based on the correlation between the analysis result of the plasma physical quantity and the physical property value of the film film film corresponding to the analysis result. The plasma physical quantity of the film-forming vapor deposition factor in each of the predetermined neighboring regions is subjected to the analysis processing, the plasma physical quantity obtained as a result is substituted into the correlation equation, and the film-forming vapor deposition apparatus is formed by the new control parameter. An estimation means for estimating the physical property value of the film-forming film at the measurement point when the film-forming film is deposited on the simulated member to be film-deposited.
13. The program of claim 13. Moreover,
A control parameter specifying means for specifying a control parameter for forming the predetermined film formation based on the estimation process repeatedly performed by changing the new control parameter.
14. The program of claim 14. The film physical property value acquisition means acquires the physical characteristic values of different film-forming films, respectively.
The program according to any one of claims 13 to 15, wherein the correlation formula deriving means derives the correlation formula for each of the different film formations. The control physical quantity analysis means changes the control parameter, and each time the control parameter is changed, the film-deposited film deposition apparatus performs film-forming vapor deposition on a simulated member to be deposited-deposited in the film-deposited film-deposited space. The program according to any one of claims 13 to 16, respectively, which analyzes the plasma physical quantity of the film-deposited film-deposited factor in a predetermined vicinity region corresponding to a plurality of measurement points to be deposited. The film-forming film is diamond-like carbon and is
The controlled physical quantity analysis means is a plurality of measurement points of the film-deposited target when the film-deposited device deposits diamond-like carbon on the simulated member of the film-deposited object by plasma CVD (Chemical Vapor Deposition). The program according to any one of claims 13 to 17, wherein the plasma physical quantity is analyzed in a predetermined vicinity region corresponding to the above.

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