JP7081979B2 - Board processing equipment - Google Patents

Description

The present invention relates to a substrate heating and holding device and a substrate processing device.

Patent Document 1 describes a coating device. This coating device is equipped with a suction stage, a heater and a spray nozzle. The suction stage sucks and holds the substrate. The heater is located inside the adsorption stage and heats the substrate. The spray nozzle is placed above the substrate held by the suction stage. The spray nozzle supplies a mist-like coating liquid (for example, a photoresist liquid) to the surface of the heated substrate. As a result, a coating film is formed on the surface of the substrate.

Japanese Patent No. 3958717

However, if a large temperature variation occurs in the substrate when the substrate is heated, the substrate may be cracked.

Therefore, an object of the present application is to provide a substrate heating and holding device and a substrate processing device that can reduce the temperature variation of the substrate.

The first aspect of the substrate processing apparatus has an upper surface that contacts the lower surface of the substrate, and transfers heat to the substrate via the substrate holding portion that holds the substrate and the substrate holding portion to transfer the substrate to the substrate. A heater for heating , a processing liquid supply unit for supplying a processing liquid to the upper surface of the substrate held by the substrate holding portion, and a gas supply unit are provided, and the substrate holding portion is in contact with the lower surface of the substrate. A main body portion having an upper surface, an inner peripheral surface facing the side surface of the main body portion across a first gap, and a peripheral edge portion of a lower surface of the substrate connected to the inner peripheral surface and held by the substrate holding portion. A tubular wall portion including a tip surface facing each other across a second gap and an outer peripheral surface connected to the tip surface, and the main body portion and the tubular wall portion are connected and communicate with the first gap. The gas supply unit has a connecting portion in which a hole is formed, and the gas supply unit supplies the gas to the hole and blows the gas outward from the second void via the first void .

The second aspect of the substrate processing apparatus is the substrate processing apparatus according to the first aspect, and in a plan view, the peripheral edge of the upper surface of the substrate holding portion is inside the peripheral edge of the substrate by 5 [mm]. Is located between the line and the peripheral edge of the substrate .

A third aspect of the substrate processing apparatus is the substrate processing apparatus according to the first or second aspect, wherein at least one of the side surface of the main body portion and the inner peripheral surface of the cylindrical wall portion. , A groove extending along the circumferential direction is formed.

The fourth aspect of the substrate processing apparatus is the substrate processing apparatus according to the third aspect, and the gap between the main body portion and the cylindrical wall portion is larger on the substrate side with respect to the groove. , It is narrower than the side opposite to the substrate with respect to the groove.

A fifth aspect of the substrate processing apparatus is the substrate processing apparatus according to the third or fourth aspect, wherein the other side of the side surface of the main body portion and the inner peripheral surface of the tubular wall portion is formed in the groove. It has protrusions at opposite positions, and the protrusions project toward the groove and extend along the circumferential direction.

A sixth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the main body portion and the cylindrical wall portion are connected to each other in the substrate holding portion. It is fixed to the substrate processing device so that it can be attached and detached in a state of being attached.

A seventh aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to sixth aspects, and the peripheral edge of the cylindrical wall portion on the outer peripheral side of the tip surface is in a plan view. It is located on the same side as or inside the peripheral edge of the substrate held by the substrate holding portion.

The eighth aspect of the substrate processing apparatus has an upper surface that contacts the lower surface of the substrate, and transfers heat to the substrate via the substrate holding portion that holds the substrate and the substrate holding portion to transfer the substrate to the substrate. A heater for heating and an elevating portion for raising and lowering the substrate are provided, and the elevating portion receives the substrate at a position away from the substrate holding portion, and the heater is heating the substrate holding portion. The substrate is lowered to the substrate holding portion, the lowering of the substrate is temporarily stopped, the substrate is raised, and then the substrate is lowered onto the upper surface of the substrate holding portion.
A ninth aspect of the substrate processing apparatus is the substrate processing apparatus according to the eighth aspect, in which the peripheral edge of the upper surface of the substrate holding portion is inside the peripheral edge of the substrate by 5 [mm] in a plan view. Is located between the line and the peripheral edge of the substrate.

A tenth aspect of the substrate processing apparatus has an upper surface that contacts the lower surface of the substrate, and transfers heat to the substrate via a substrate holding portion that holds the substrate and the substrate holding portion to transfer the substrate to the substrate. A heater for heating and an elevating part for raising and lowering the substrate are provided, and the elevating part receives the substrate at a position away from the substrate holding portion, and the heater is heating the substrate holding portion. After lowering the substrate to the substrate holding portion, the substrate is temporarily stopped, and then the substrate is lowered to the upper surface of the substrate holding portion, and the elevating portion is the speed at which the substrate is raised. The substrate is lowered onto the substrate holder at a lower speed.
The eleventh aspect of the substrate processing apparatus is the substrate processing apparatus according to the tenth aspect, and in a plan view, the peripheral edge of the upper surface of the substrate holding portion is inside the peripheral edge of the substrate by 5 [mm]. Is located between the line and the peripheral edge of the substrate.

According to the first aspect of the substrate processing apparatus, the gas blown out from the second void can blow the treatment liquid transmitted from the side surface to the lower surface of the substrate to the outside.
According to the second, ninth and eleventh aspects of the substrate heating and holding device, the variation in the temperature of the substrate can be reduced.

According to the third aspect of the substrate processing apparatus, the gas flows circumferentially along the groove and then is blown out from the second void between the substrate and the tubular wall portion. Therefore, the uniformity of the flow rate of the gas flowing outward from the second void in the circumferential direction can be improved.

According to the fourth aspect of the substrate processing apparatus, the outlet from the groove is narrower than the entrance to the groove, so that the gas easily flows along the groove in the circumferential direction. Therefore, the uniformity of the flow rate of the gas flowing outward from the second void can be further improved.

According to the fifth aspect of the substrate processing apparatus, the gas colliding with the protrusion flows toward the groove. Therefore, the amount of gas flowing along the circumferential direction in the groove increases, and by extension, the uniformity of the flow rate of the gas flowing outward from the second void can be further improved.

According to the sixth aspect of the substrate processing apparatus, the main body portion and the cylindrical wall portion can be removed from the substrate processing apparatus in a state of being connected to each other. Therefore, even if the width of the second gap between the side surface of the main body portion and the inner peripheral surface of the cylindrical wall portion is narrowed, the substrate holding portion can be easily attached to and detached from the substrate processing device. Therefore, the work at the time of cleaning the substrate holding portion can be facilitated.

According to the seventh aspect of the substrate processing apparatus, the processing liquid adhering to the tip surface can be reduced or avoided.

According to the eighth aspect of the substrate processing apparatus, the temperature of the substrate can be rapidly increased while reducing the variation in the temperature of the substrate.

According to the tenth aspect of the substrate processing apparatus, the temperature variation of the substrate can be reduced.

It is a top view which shows an example of the structure of a substrate processing system schematically. It is a top view which shows an example of the structure of the substrate processing apparatus schematically. It is a side view which shows an example of the structure of the substrate processing apparatus schematically. It is sectional drawing which shows typically an example of the structure of the substrate holding part. It is a top view which shows the main body part of the board holding part and an example of a board schematically. It is a graph which shows an example of the temperature distribution of a substrate schematically. It is a flowchart which shows an example of the operation of a board processing apparatus. It is a figure which shows roughly an example of the state at the time of carrying in a substrate. It is a figure which shows roughly an example of the state at the time of carrying in a substrate. It is a figure which shows roughly an example of the state at the time of carrying in a substrate. It is a flowchart which shows an example of the operation of the board processing apparatus at the time of carrying in a board. It is a top view which shows an example of the structure of the main body part of a board holding part schematically.

Hereinafter, embodiments will be described with reference to the drawings. The following embodiment is an example of the substrate processing apparatus, and is not an example of limiting the technical scope of the substrate processing apparatus. Further, in each figure referred to below, the dimensions and numbers of each part may be exaggerated or simplified for easy understanding. Further, in each figure, the same reference numerals are given to the portions having the same configuration and function, and the duplicate description is omitted in the following description. The vertical direction is the vertical direction.

The first embodiment.
<Board processing system>
FIG. 1 is a diagram schematically showing an example of a substrate processing system 100. The substrate processing system 100 performs various processing on the substrate 9. The substrate 9 is a piezoelectric substrate such as lithium tantalate (LiTaO ₃ ) or lithium niobate (LiNbO ₃ ). Since the heat transfer coefficient of this piezoelectric substrate is low, when heat is locally applied to the substrate 9, the temperature of the substrate 9 tends to vary. Further, since the coefficient of thermal expansion of the piezoelectric substrate is high, cracks may occur due to temperature variation of about several [° C.] even at a low temperature (for example, in the range of 80 ° C to 150 ° C). In this embodiment, as will be described in detail later, it is intended to heat the substrate 9 without causing cracks due to heat.

Such a piezoelectric substrate is used, for example, as a substrate for a SAW (surface acoustic wave) filter. The substrate 9 has a plate-like shape and has a substantially circular shape in a plan view. The diameter of the substrate 9 is set to, for example, about several tens [mm] or more.

In the example of FIG. 1, in the board processing system 100, two board processing devices 10 are arranged adjacent to each other, and a transfer robot 120 is provided so as to face both board processing devices 10. The transfer robot 120 takes out one board 9 from each of the cassettes 111 and 112 mounted on the loader unit 110, and transfers the board 9 to the board processing device 10. Each substrate processing device 10 supports the substrate 9 carried in by the transfer robot 120, and performs various processing on the substrate 9. For example, the substrate processing apparatus 10 supplies the processing liquid to the upper surface of the substrate 9 and performs the processing based on the processing liquid on the substrate 9. As a more specific example, the substrate processing apparatus 10 forms a film such as a photoresist film by spray-coating a coating liquid such as a photoresist liquid on the upper surface of the substrate 9 as a treatment liquid. Such a substrate processing device 10 is also called a coating device.

When the processing to the substrate 9 is completed, the transfer robot 120 takes out the processed substrate 9 from the substrate processing apparatus 10 and stores the substrate 9 in each of the cassettes 131 and 132 mounted on the unloader unit 130. By continuously and repeatedly performing such an operation in the substrate processing system 100, the plurality of substrates 9 housed in each of the cassettes 111 and 112 of the loader unit 110 are in a state of being processed (for example, the same). With the coating film formed on the surface), it is accommodated in each of the cassettes 131 and 132 mounted on the unloader unit 130. A heater (oven) (not shown) is provided below the cassettes 131 and 132 of the unloader unit 130, and the coating film formed on the surface of the substrate 9 can be dried and cured in the unloader unit 130.

<Board processing equipment>
FIG. 2 is a plan view schematically showing an example of the internal configuration of the substrate processing apparatus 10, and FIG. 3 is a side view schematically showing an example of the internal configuration of the substrate processing apparatus 10.

The substrate processing apparatus 10 includes a nozzle support arm 11, a spray nozzle 12, and a drive unit 13 as a processing liquid supply unit that supplies the processing liquid to the upper surface 9a of the substrate 9. One end (base) of the nozzle support arm 11 is connected to the rotating shaft 13a of the drive unit 13, and the other end (tip) supports the spray nozzle 12 from the upper surface 9a of the substrate 9 at a predetermined height position. As shown in FIG. 3, a gas (process air) such as nitrogen (N ₂ ) and a coating liquid (treatment liquid) such as a resist liquid are supplied to the spray nozzle 12, and the spray nozzle 12 atomizes the coating liquid. It is configured to be sprayed in a shape. The drive unit 13 is composed of a rotary drive member such as a motor, and the spray nozzle 12 is moved along the arcuate locus L by rotationally driving the rotary shaft 13a that supports one end of the nozzle support arm 11. As shown in FIG. 2, the locus L is a locus that passes through the center of the substrate 9 and on the upper surface 9a of the substrate 9.

Further, the substrate processing device 10 includes a substrate heating and holding device 30, a rotation mechanism 40, a gas supply unit 70, and a pin elevating unit 60. The substrate heating and holding device 30 heats the substrate 9 while holding the substrate 9 in a substantially horizontal posture. Specifically, the substrate heating and holding device 30 has a substrate holding portion 50 and a heater 32. The substrate holding portion 50 is a member that holds the substrate 9 in a substantially horizontal posture.

FIG. 4 is a cross-sectional view schematically showing an example of a partial configuration of the substrate holding portion 50. The board holding portion 50 has a main body portion 51, a cylindrical wall portion 52, a connecting portion 53, and a cover portion 54. The main body 51 has a substantially horizontal upper surface 51a, and the substrate 9 is placed on the upper surface 51a. In other words, when the upper surface 51a comes into contact with the lower surface 9b of the substrate 9, the main body 51 holds the substrate 9 substantially horizontally. The substrate holding portion 50 may be a suction stage. For example, a plurality of suction openings (not shown) are formed on the upper surface 51a of the main body 51, and air is sucked from these openings to attract the substrate 9 to the upper surface 51a of the main body 51. ..

The upper surface 51a of the main body 51 has the same shape as the substrate 9 in a plan view. Here, since the substrate 9 has a substantially circular shape in a plan view, the upper surface 51a of the main body 51 also has a substantially circular shape in a plan view. FIG. 5 is a plan view schematically showing an example of the substrate 9 and the main body portion 51 of the substrate holding portion 50. The peripheral edge of the upper surface 51a of the main body 51 is located between the peripheral line VL1 and the peripheral edge of the substrate 9 inside the peripheral edge of the substrate 9 by 5 [mm]. That is, the diameter of the upper surface 51a of the main body 51 is shorter than the diameter of the substrate 9 and longer than the value obtained by subtracting 10 [mm] from the diameter of the substrate 9.

Here, since the substrate 9 is placed on the upper surface 51a of the main body 51 so that its center substantially coincides with the center of the upper surface 51a, the substrate 9 is placed substantially evenly from the peripheral edge of the upper surface 51a of the main body 51. It spreads outward. As a specific example, the distance between the peripheral edge of the substrate 9 and the peripheral edge of the upper surface 51a of the main body 51 is set to 3 [mm].

With reference to FIGS. 3 and 4, the cylindrical wall portion 52 has a cylindrical shape that surrounds the main body portion 51 from the outside across the gap G1. The cylindrical wall portion 52 has a tip surface 52a, an inner peripheral surface 52b, and an outer peripheral surface 52c, and the inner peripheral surface 52b faces the side surface 51b of the main body portion 51 with a gap G1 in between. The tip surface 52a of the cylindrical wall portion 52 is a surface that connects the inner peripheral surface 52b and the outer peripheral surface 52c, and faces the peripheral edge portion of the lower surface 9b of the substrate 9 held by the main body portion 51 across a gap G2. ing. That is, the tip surface 52a of the cylindrical wall portion 52 is formed at a position lower than the upper surface 51a of the main body portion 51. The gaps G1 and G2 are formed over the entire circumference of the substrate holding portion 50 and communicate with each other.

The width of the gap G2 (width along the vertical direction) is set to, for example, several tens (specifically, 50) [μm]. Further, the width of the gap G1 (width along the horizontal direction) is set to, for example, several hundreds (specifically, 500) [μm] on the gap G2 side, although it differs depending on the position in the vertical direction in the example of FIG. Ru.

In the example of FIG. 4, a groove 511 is formed on the side surface 51b of the main body 51, and a protrusion 521 is provided on the inner peripheral surface 52b of the cylindrical wall 52 so as to face the groove 511. .. These will be described in detail later.

The connecting portion 53 connects the main body portion 51 and the cylindrical wall portion 52, and connects the lower portion of the main body portion 51 and the lower portion of the tubular wall portion 52. Further, the connecting portion 53 is formed with a hole H1 that communicates with the gap G1 while penetrating itself in the vertical direction. The holes H1 are formed at intervals along the circumferential direction in a plan view, and for example, four holes H1 are formed at substantially equal intervals in the circumferential direction. Note that FIG. 4 shows the structure of the cross section in which the hole H1 is shown. At first glance, the connecting portion 53 does not seem to connect the main body portion 51 and the cylindrical wall portion 52, but actually. In the cross section where the hole H1 does not exist, the connecting portion 53 extends from the main body portion 51 to the cylindrical wall portion 52.

Gas (for example, nitrogen) is supplied to the hole H1 from the gas supply unit 70 described later. The gas from the gas supply unit 70 flows inside the holes H1 and the voids G1 and G2 in this order, and blows out from the voids G2 to the outside. That is, gas is blown out from between the peripheral edge portion of the lower surface 9b of the substrate 9 held by the main body portion 51 and the tip surface 52a of the cylindrical wall portion 52. As a result, even if the coating liquid on the upper surface 9a of the substrate 9 is transmitted to the side surface of the substrate 9, the coating liquid is blown outward by the gas and is not easily transmitted to the lower surface 9b side of the substrate 9. Therefore, the amount of the coating liquid adhering to the lower surface 9b side of the substrate 9 can be reduced to almost zero.

The cover portion 54 extends vertically downward from the peripheral portion of the connecting portion 53. More specifically, the cover portion 54 extends vertically downward from the peripheral edge portion outside the hole H1 of the connecting portion 53. The cover portion 54 surrounds the space on the lower side of the connecting portion 53. The heater 32, the rotation mechanism 40, the pin elevating part 60, and the gas supply part 70, which will be described in detail later, are provided inside the cover part 54, and the cover part 54 protects them from the coating liquid.

The substrate holding portion 50 (main body portion 51, cylindrical wall portion 52, connecting portion 53, and cover portion 54) may be integrally formed of the same material (for example, aluminum). Alternatively, the substrate holding portion 50 may be configured such that a plurality of members are fixed to each other by a predetermined fixing method (for example, screws, bolts, press-fitting, locking, adhesive, etc.). For example, the cylindrical wall portion 52, the connecting portion 53, and the cover portion 54 may be integrally formed of the same material, and the integrated object may be fixed to the main body portion 51 by, for example, screwing. For example, the main body 51 and the connecting 53 are screwed to each other in the vertical direction, so that the integral body and the main body 51 are mutually fixed.

The heater 32 has a heat generating mechanism (for example, a heating wire) and generates heat under the control of the control unit 20. The heater 32 transfers the generated heat to the substrate 9 via the substrate holding portion 50. In the example of FIG. 3, the heater 32 is provided vertically below the connecting portion 53 and is in contact with the lower surface of the connecting portion 53. The heat from the heater 32 is transferred to the substrate 9 via the connecting portion 53 and the main body portion 51 in this order. As a result, the temperature of the substrate 9 can be raised. For example, the heater 32 raises the temperature of the substrate 9 to a temperature within the range of about 80 degrees to 150 degrees. As a result, the coating liquid applied to the upper surface 9a of the substrate 9 can be quickly dried and fixed.

A rotation mechanism 40 is connected to the substrate holding portion 50 and the heater 32. The rotation mechanism 40 has a rotation shaft 41 and a rotation drive unit 42. The rotary shaft 41 extends along the vertical direction, and one end (tip) thereof is connected to the heater 32. The rotary drive unit 42 has a motor and rotates the rotary shaft 41 under the control of the control unit 20. When the rotation drive unit 42 performs a rotation operation, the rotation operation is transmitted to the rotation shaft 41, and the rotation shaft 41 rotates in the R direction. As a result, the substrate 9 held by the substrate holding portion 50 rotates in the R direction as the rotating shaft 41 rotates.

The rotary shaft 41 has a hollow structure, and the hollow portion communicates with a plurality of openings formed in the upper surface 51a of the main body portion 51. Then, air suction is performed by a suction device (not shown), and the substrate 9 placed on the upper surface 51a of the main body 51 is vacuum sucked.

The pin elevating unit 60 receives the unprocessed substrate 9 from the transfer robot 120 at a position away from the substrate holding portion 50, lowers the substrate 9 to place the substrate 9 on the substrate holding portion 50, and processes the substrate 9. The finished substrate 9 is raised from the substrate holding portion 50. The transfer robot 120 receives the processed substrate 9 in that state.

Specifically, the pin elevating unit 60 has a plurality of lift pins 61 and an elevating drive unit 62. The plurality of lift pins 61 have an elongated shape extending along the vertical direction, and are arranged at substantially equal intervals along the circumferential direction. The plurality of lift pins 61 are connected to each other at their proximal ends. However, in the example of FIG. 3, in order to facilitate the illustration, the portion of the connecting member connecting the plurality of lift pins 61 that overlaps with the rotating shaft 41 is not shown. The plurality of lift pins 61 can penetrate the heater 32 and the substrate holding portion 50 along the vertical direction. In other words, the heater 32 and the substrate holding portion 50 are formed with through holes (not shown) through which the lift pin 61 penetrates.

The elevating drive unit 62 has, for example, an air cylinder, and moves the lift pin 61 up and down along the vertical direction. With the lift pin 61 lifted by the elevating drive unit 62, the substrate 9 is placed on the tips of the plurality of lift pins 61 by the transfer robot 120. In the example of FIG. 3, the tip portion of the lift pin 61 and the substrate 9 in this state are shown by virtual lines. In this state, the elevating drive unit 62 lowers the plurality of lift pins 61, so that the substrate 9 is placed on the upper surface 51a of the main body 51.

The gas supply unit 70 supplies the gas to the hole H1 of the substrate holding unit 50, and blows the gas out from the gap G2 via the gap G1. More specifically, the gas supply unit 70 includes a plurality of nozzles 71, a pipe 72, an on-off valve 73, and a heater 74. The nozzle 71 may be arranged, for example, with its tip inserted into the hole H1. The space in the hole H1 into which the tip of the nozzle 71 is inserted communicates with the entire circumference of the substrate holding portion 50. As a result, the substrate holding portion 50 is configured so that the nozzle 71 does not collide with the substrate holding portion 50 even if the substrate holding portion 50 is rotated by the rotation mechanism 40. Here, four nozzles 71 are provided at substantially equal intervals along the circumferential direction.

Each nozzle 71 is connected to the gas supply source 75 via a pipe 72. The gas supply source 75 supplies a gas such as nitrogen to the inside of the pipe 72. The on-off valve 73 is provided in the middle of the pipe 72, and switches the opening and closing of the flow path inside the pipe 72. The on-off valve 73 is controlled by the control unit 20. When the on-off valve 73 is opened, the gas from the gas supply source 75 flows inside the pipe 72 and is discharged from the nozzle 71. This gas flows through the holes H1 and the voids G1 and G2 in this order, and is blown out of the peripheral edge of the substrate 9. As a result, the coating liquid transmitted from the side surface of the substrate 9 to the lower surface 9b can be blown outward.

The heater 74 is provided in the middle of the pipe 72 and has a heat generating mechanism (for example, a heating wire). The heater 74 heats the gas in the pipe 72. The heater 74 is controlled by the control unit 20 to raise the temperature of the gas to a temperature comparable to that of the substrate 9 (for example, in the range of 80 degrees to 150 degrees).

In the substrate processing apparatus 10, when the substrate 9 is rotating in the R direction, the coating liquid is spray-applied by the processing liquid supply unit. Since the substrate 9 is rotated at a relatively low speed and the spray nozzle 12 is moved along the locus L to spray and apply the coating liquid, the coating liquid is less scattered due to centrifugal force, and the coating liquid is applied. The utilization efficiency of is high. At this time, the heater 32 serves as a heat source to heat the substrate 9 on the substrate holding portion 50. This can promote the formation of the coating film. At this time, the gas supply unit 70 supplies gas to the inside of the holes H1 and the voids G1 and G2. This makes it possible to suppress or avoid dripping of the coating liquid from the side surface of the substrate 9 and adhesion of the coating liquid to the lower surface 9b side of the substrate 9.

A cup portion 80 is provided around the substrate holding portion 50. The cup portion 80 includes an outer wall portion 81 and a gas-liquid separation chamber 83. The outer wall portion 81 has a cylindrical shape facing the substrate holding portion 50 from the outside across a gap, and is connected to the cover portion 54 by the gas-liquid separation chamber 83. The tip surface of the outer wall portion 81 is located above the substrate 9. The substrate holding portion 50 and the cup portion 80 may be integrally formed, or may be fixed to each other by a predetermined fixing method (for example, screws, bolts, press-fitting, locking or adhesive).

The coating liquid that did not adhere to the surface of the substrate 9 moves downward in the space between the outer wall portion 81 and the substrate holding portion 50 along the air flow generated by the exhaust gas of the gas-liquid separation chamber 83, and the gas-liquid separation chamber 83. Guided by. Further, the coating liquid adhering to the outer wall portion 81 and the substrate holding portion 50 also flows down along these wall surfaces and is guided to the gas-liquid separation chamber 83 provided at the lower part of the outer wall portion 81 and the substrate holding portion 50. In the gas-liquid separation chamber 83, gas-liquid separation is performed, and drainage and exhaust inside the cup are performed. Since the coating liquid scattered on the outside of the substrate 9 is configured to be drained by the gas-liquid separation chamber 83 in this way, the frequency of cup cleaning is low.

The substrate processing apparatus 10 is provided with a control unit 20 in order to control the processing liquid supply unit and the support mechanism as described above. The control unit 20 controls the drive unit 13, the elevating drive unit 62, and the rotary drive unit 42, and also supplies the process air and the coating liquid to be supplied to the spray nozzle 12, as well as the on-off valve 73 and the heater 74 (that is, the nozzle 71). The supply state of the gas supplied to the The control unit 20 is also configured to control air suction and a heater 32 for sucking and fixing the substrate 9 to the substrate holding unit 50. Therefore, the control unit 20 comprehensively controls the process of forming the coating film by spray-coating the coating liquid on the substrate 9. The control unit 20 performs signal communication with each unit so as to operate in cooperation with each unit such as the transfer robot 120 in the substrate processing system 100.

The control unit 20 is an electronic circuit device, and may include, for example, an arithmetic processing device and a storage medium. The arithmetic processing unit may be, for example, an arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit may have a non-temporary storage medium (for example, ROM (Read Only Memory) or hard disk) and a temporary storage medium (for example, RAM (Random Access Memory)). The non-temporary storage medium may store, for example, a program that defines the processing executed by the control unit 20. When the processing device executes this program, the control unit 20 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 20 may be executed by the hardware.

When the transfer robot 120 and the substrate 9 are handed over in the substrate processing apparatus 10, the spray nozzle 12 is located at the initial position P1 as shown in FIG. The initial position P1 is a position that does not face the substrate holding portion 50 in the vertical direction. Then, the substrate 9 is attracted and fixed to the substrate holding portion 50, starts to rotate in the R direction, and the spray nozzle 12 starts to move along the locus L. Then, the spray coating from the spray nozzle 12 is started at the position immediately before the spray nozzle 12 approaches the upper end of the substrate 9 (for example, the position P2), and then the spray coating is continued and passed through the center position of the substrate 9. And move on the substrate 9. Then, the spray coating is stopped at a position (for example, position P3) immediately after the spray nozzle 12 comes out from the end portion of the substrate 9.

In the series of coating processing processes as described above, the control unit 20 controls the nozzle movement speed of the spray nozzle 12 at a position near the center of the substrate 9 at a higher speed than the peripheral portion of the substrate 9. Further, the control unit 20 changes the rotation speed of the substrate holding unit 50 in proportion to the fluctuation of the nozzle movement speed of the spray nozzle 12. This makes it possible to form a coating film with a more uniform film thickness.

Further, in the substrate processing apparatus 10, the peripheral edge of the upper surface 51a of the main body 51 is located between the line VL1 and the peripheral edge of the substrate 9 in a plan view (see FIG. 5). Therefore, the upper surface 51a of the main body 51 comes into contact with the lower surface 9b of the substrate 9 in a wider area. As a result, the area of the region where the substrate 9 directly receives heat from the main body 51 can be improved, and the variation in the temperature distribution on the substrate 9 can be reduced.

FIG. 6 is a graph schematically showing an example of the temperature distribution of the substrate. In the example of FIG. 6, the temperature distribution of the substrate 9 in the substrate processing apparatus 10 is shown by a solid line, and the temperature distribution of the substrate 9 in the substrate processing apparatus according to the comparative example is shown by a broken line. In the comparative example, the distance between the peripheral edge of the upper surface of the substrate holding portion and the peripheral edge of the substrate 9 is about 40 [mm]. In both the present embodiment and the comparative example, the temperature on the substrate 9 decreases as it approaches the side surface in the peripheral portion thereof. However, in the comparative example, the temperature gradient is large at the peripheral portion of the substrate 9, and the difference between the temperature on the side surface of the substrate 9 and the temperature near the center of the substrate 9 is large.

On the other hand, according to the present embodiment, since the distance between the peripheral edge of the upper surface 51a of the substrate holding portion 50 and the peripheral edge of the substrate 9 is about 3 [mm], the temperature at the peripheral edge portion of the substrate 9 is high. The inclination can be made sufficiently smaller than that of the comparative example. Therefore, the difference between the temperature on the side surface of the substrate 9 and the temperature near the center of the substrate 9 can be made sufficiently smaller than that in the comparative example. For example, in FIG. 6, the difference can be reduced to about 1/6 of the comparative example. That is, the temperature variation in the substrate 9 can be effectively reduced. Therefore, it is possible to effectively reduce the possibility that the substrate 9 is cracked due to the variation in temperature.

<Groove>
In the example of FIG. 4, a groove 511 is formed on the side surface 51b of the main body 51. The groove 511 extends along the circumferential direction, and more specifically, the groove 511 is formed over the entire circumference of the side surface 51b of the main body 51. In the example of FIG. 4, the groove 511 is formed by a surface 511a on the substrate 9 side, a surface 511b, and a surface 511c on the side opposite to the substrate 9. The surfaces 511a and 511c are surfaces facing each other in the vertical direction, and in the example of FIG. 4, they extend substantially horizontally. The surface 511b is a surface connecting the surfaces 511a and 511c, and in the example of FIG. 4, it extends along the vertical direction. The width of the groove 511 (width along the vertical direction) is set to, for example, about several [mm] (specifically, 5 [mm]).

According to such a substrate holding portion 50, at least a part of the gas discharged from the nozzle 71 once spreads in the circumferential direction along the groove 511. Therefore, the gas is blown out from the peripheral edge of the substrate 9 at a more uniform flow rate. That is, it is possible to improve the uniformity of the flow rate of the gas blown out from the peripheral edge of the substrate 9 in the circumferential direction (hereinafter, simply referred to as uniformity). As a result, the coating liquid can be blown off more uniformly over the entire circumference of the substrate 9.

Further, in the example of FIG. 4, the width of the gap G1 on the upper side with respect to the groove 511 is narrower than the width of the gap G1 on the lower side with respect to the groove 511. In other words, the gap between the main body portion 51 and the cylindrical wall portion 52 is narrower on the substrate 9 side with respect to the groove 511 than on the side opposite to the substrate 9 with respect to the groove 511. According to this, since the entrance to the groove 511 is wide and the exit from the groove 511 is narrow, the gas is more likely to spread along the circumferential direction in the groove 511. Therefore, the uniformity of the gas blown out from the peripheral edge of the substrate 9 can be further improved.

<Protrusion>
In the example of FIG. 4, a protrusion 521 is provided on the inner peripheral surface 52b of the tubular wall portion 52. The protrusion 521 projects toward the groove 511 at a position facing the groove 511 in the radial direction. The protrusion 521 extends along the circumferential direction, and more specifically, the protrusion 521 extends over the entire circumference of the tubular wall portion 52. The protrusion 521 is formed by an upper surface 521a on the substrate 9 side, a side surface 521b which is a front end surface of the protrusion 521, and a lower surface 521c on the opposite side of the substrate 9. In the example of FIG. 4, the upper surface 521a and the lower surface 521c extend substantially horizontally. The side surface 521b is a surface connecting the upper surface 521a and the lower surface 521c, and in the example of FIG. 4, extends along the vertical direction.

The width of the protrusion 521 (width along the vertical direction) is narrower than the width of the groove 511 (width along the vertical direction), and a part of the upper surface 521a of the protrusion 521 on the inner peripheral side is the outer periphery of the surface 511a of the groove 511. It faces a part of the side in the vertical direction. On the other hand, the lower surface 521c of the protrusion 521 does not face the main body 51 in the vertical direction. The distance between the surface 511b of the groove 511 and the side surface 521b of the protrusion 521 is set to, for example, about several [mm] (specifically, 5 [mm]).

In such a substrate holding portion 50, the gas flowing vertically upward from the nozzle 71 collides with the lower surface 521c of the protrusion 521 and flows to the groove 511 side. That is, when the protrusion 521 is not provided, some of the gas can flow directly into the gap G2 without passing through the groove 511, whereas when the protrusion 521 is provided, the said portion 521 is provided. Some gas also tends to flow into the groove 511. As a result, the amount of gas that spreads along the circumferential direction in the groove 511 increases, and by extension, the uniformity of the gas blown out from the peripheral edge of the substrate 9 can be further improved.

<Assembly of board holder>
In the example of FIG. 4, as described above, the lower surface 521c of the protrusion 521 does not face the main body 51 in the vertical direction. This is suitable for a structure that constitutes the substrate holding portion 50 by integrally forming the tubular wall portion 52, the connecting portion 53, and the cover portion 54, and attaching the integrated object to the main body portion 51. This is because the integrated object can be attached to the main body portion 51 by moving the integrated object vertically upward with respect to the main body portion 51. That is, even if the integrated object is moved with respect to the main body 51 along the vertical direction, the protrusion 521 does not collide with the main body 51, so that such assembly is possible.

<Cylindrical wall tip surface>
As illustrated in FIG. 4, the peripheral edge of the tip surface 52a of the cylindrical wall portion 52 may be located on the same level as or inside the peripheral edge of the substrate 9 in a plan view. In this case, the tip surface 52a of the cylindrical wall portion 52 does not project outward from the substrate 9 in a plan view.

According to this, the coating liquid ejected from the spray nozzle 12 hardly adheres to the tip surface 52a. This is because the tip surface 52a is covered with the substrate 9. Moreover, since the gas from the gas supply unit 70 is blown out from between the substrate 9 and the tip surface 52a, the coating liquid is hardly transmitted to the lower surface 9b of the substrate 9 and adheres to the tip surface 52a. If the coating liquid adheres to the tip surface 52a, when the processing of the substrate 9 is completed and the next substrate 9 is placed on the upper surface 51a, the coating liquid on the tip surface 52a is the next It may adhere to the lower surface 9b of the substrate 9. Such adhesion is not preferred. On the other hand, in the example of FIG. 4, since the coating liquid hardly adheres to the tip surface 52a, such a problem can be suppressed or avoided.

<How to attach / detach the board holder>
The coating liquid may adhere to the outer peripheral surface of the substrate holding portion 50 (the outer peripheral surface of the cylindrical wall portion 52 and the cover portion 54). Therefore, it is necessary to remove the substrate holding portion 50 from the substrate processing device 10 and clean it.

Therefore, the substrate holding portion 50 is detachably fixed to the housing (not shown) of the substrate processing device 10. More specifically, the substrate holding portion 50 is removed from the substrate processing device 10 in a state where the main body portion 51, the cylindrical wall portion 52, the connecting portion 53, and the cover portion 54 are connected to each other, and the substrate holding portion 50 is removed from the substrate processing apparatus 10. It is attached to the substrate processing apparatus 10 in a state. As a specific example, the substrate holding portion 50 is detachably attached to the heater 32. In this case, the worker can handle the board holding portion 50 integrally and attach / detach it to / from the board processing device 10. Then, the worker removes the substrate holding portion 50 from the substrate processing device 10 and then cleans the substrate holding portion 50. As a result, the coating liquid adhering to the outer peripheral surface of the substrate holding portion 50 can be removed.

It is preferable that the substrate holding portion 50 can be attached to and detached from the substrate processing device 10 in a state where the main body portion 51 and the cylindrical wall portion 52 are connected to each other in this way in the following points.

In order to explain this advantage, first, a conventional structure will be described. Conventionally, the stage for holding the substrate 9 (corresponding to the main body 51) and the protective cover (corresponding to the outer peripheral portion of the connecting portion 53, the tubular wall portion 52 and the cover portion 54) are configured as separate bodies. The cover was detachably fixed to the substrate processing device. Since the coating liquid does not adhere to the stage, the worker independently removes the cover from the substrate processing apparatus, cleans the cover, and then attaches the cleaned cover to the substrate processing apparatus.

However, in the present embodiment, in order to reduce the temperature variation of the substrate 9, the upper surface 51a of the main body 51 is set wide, and instead, the gap (gap) between the main body 51 and the cylindrical wall 52 is set. The width of G1) is set as small as, for example, several hundred [μm], and the width of the cylindrical wall portion 52 is set thin.

Conventionally, if the upper surface of the stage is set wide, the gap between the stage and the protective cover is set as small as several hundred [μm], and the cover is set thin, the substrate 9 can be used. Cracking can be suppressed. However, in such a structure, the cover and the stage are likely to collide with each other during the work of attaching and detaching the cover, and the workability is deteriorated. Moreover, since the cover is formed thin, it may be damaged by the collision.

On the other hand, when the substrate holding portion 50 can be attached to and detached from the substrate processing device 10 in a state where the main body portion 51 and the cylindrical wall portion 52 are connected to each other, such work difficulties are avoided. can do. That is, the substrate holding portion 50 can be easily attached to and detached from the substrate processing device 10. Therefore, the work at the time of cleaning the substrate holding portion can be facilitated.

Conversely, the substrate holding portion 50 is detachably fixed to the substrate processing device 10 in a state where the main body portion 51 and the tubular wall portion 52 are connected to each other, so that the main body portion 51 and the tubular wall portion are detachably fixed to each other. The gap between the portion 52 and the portion 52 can be set narrower, and the width of the tubular wall portion 52 can be set narrower. Therefore, the upper surface 51a of the main body 51 can be set wider. Thereby, the variation in the temperature of the substrate 9 can be effectively suppressed.

<Raising the temperature of gas>
The heater 32 also heats the cylindrical wall portion 52 via the connecting portion 53. Therefore, the heater 32 heats the substrate holding portion 50 as a whole.

By the way, in the above-mentioned example, the gas from the gas supply unit 70 flows inside the substrate holding unit 50 (holes H1 and voids G1 and G2). Therefore, when the gas from the gas supply unit 70 is lower than the temperature of the substrate holding unit 50, the gas is heated inside the substrate holding unit 50. That is, the gas receives heat from the substrate holding portion 50. Therefore, the temperature of the gas raised by the heater 74 may be set lower than the temperature of the substrate holding portion 50 (or the temperature of the substrate 9) raised by the heater 32.

As a result, the gas whose temperature has been adjusted (heated) by the substrate holding portion 50 can be blown out from the peripheral edge of the substrate 9 by using the inside of the substrate holding portion 50 as a flow path. That is, the amount of heat possessed by the substrate holding unit 50 can be effectively utilized to heat the gas from the gas supply unit 70, and the power consumption of the substrate processing apparatus 10 as a whole can be reduced.

If the amount of heat transferred from the substrate holding portion 50 to the gas is sufficiently large, the heater 74 may be omitted. For example, by increasing the length of the gas path flowing inside the substrate holding portion 50, the amount of heat transferred to the gas can be increased.

<Modification example>
In the above example, the groove 511 is formed on the side surface 51b of the main body 51, and the protrusion 521 is formed on the inner peripheral surface 52b of the tubular wall 52. However, this is not always the case. Even if a groove extending all around the circumferential direction is formed on the inner peripheral surface 52b of the tubular wall portion 52, and a protrusion protruding toward the groove is formed on the side surface 51b of the main body portion 51. good. This also makes it possible to improve the uniformity of the gas blown out from the peripheral edge of the substrate 9.

However, when the width of the cylindrical wall portion 52 is set to be thin as described above, it is difficult to form a groove on the inner peripheral surface 52b thereof. Therefore, in this case, it is preferable to form the groove 511 on the side surface 51b of the main body 51. Conversely, by forming the groove 511 on the side surface 51b of the main body 51, it is not necessary to form the groove on the inner peripheral surface 52b of the tubular wall portion 52, and the cylindrical wall portion 52 is formed thinly. Can be done. As a result, the peripheral edge of the tip surface 52a of the cylindrical wall portion 52 on the outer peripheral side can be easily positioned at the same level as the peripheral edge of the substrate 9 or inside.

The second embodiment.
The configuration of the substrate processing apparatus 10 according to the second embodiment is the same as that of the first embodiment. However, in the second embodiment, the operation at the time of carrying in the substrate 9 is different from that in the first embodiment. Specifically, the pin elevating portion 60 temporarily stops in the middle of lowering the substrate 9 after receiving the unprocessed substrate 9, and then lowers the substrate 9 to the upper surface 51a of the substrate holding portion 50. The heater 32 generates heat under the control of the control unit 20 when the substrate 9 is carried in, and heats the substrate holding unit 50.

FIG. 7 is a flowchart showing an example of the operation of the board processing device 10 when the board is carried in, and FIGS. 8 to 10 are diagrams schematically showing an example of the state of the lift pin 61 in each step. First, in step S1, the control unit 20 controls the elevating drive unit 62 to raise the plurality of lift pins 61 to the first height position. The first height position is a position where the transfer robot 120 and the substrate 9 are transferred.

Next, in step S2, the transfer robot 120 places the unprocessed substrate 9 on the tips of the plurality of lift pins 61 (see FIG. 8). For example, the transfer robot 120 moves the substrate 9 above the plurality of lift pins 61 and then lowers the substrate 9 to mount the substrate 9 on the tips of the plurality of lift pins 61.

Next, in step S3, the control unit 20 controls the elevating drive unit 62 to lower the plurality of lift pins 61 to a second height position lower than the first height position (see also FIG. 9). Even at this second height position, the substrate 9 is still separated from the upper surface 51a of the main body 51 of the substrate holding portion 50, and is heated by the radiant heat from the main body 51. The distance between the substrate 9 and the upper surface 51a of the substrate holding portion 50 at the second height position is, for example, about several [mm] or less.

After stopping the lift pin 61 at the second height position for a predetermined period, in step S4, the control unit 20 controls the elevating drive unit 62 to further lower the plurality of lift pins 61, and the substrate 9 is placed on the upper surface. Place it on 51a (see also FIG. 10). As a result, the substrate 9 is heated by directly transferring heat from the main body 51. The passage of a predetermined period can be detected by using, for example, a timer circuit. The timer circuit is provided in, for example, the control unit 20.

According to such a substrate loading method, the substrate 9 is heated in step S3 before being placed on the upper surface 51a of the main body 51. Since the amount of heat received by the substrate 9 from the main body 51 in step S3 is smaller than that in step S4, the substrate 9 slowly raises the temperature in step S3. Further, since the heat spreads on the substrate 9, the peripheral edge of the substrate 9 also slowly rises in temperature. Then, after a period of time in which the temperature variation of the substrate 9 is sufficiently reduced in step S3, the substrate 9 is placed on the upper surface 51a of the main body portion 51 in step S4. In this way, the substrate 9 is placed on the upper surface 51a of the main body 51 in a state where the temperature is raised in advance with a small temperature variation. Therefore, it is possible to reduce the temperature variation caused by the heating of the substrate 9 in step S4.

In the above example, after receiving the substrate 9, the pin elevating portion 60 lowers the substrate 9 to the top of the upper surface 51a of the substrate holding portion 50 without raising the substrate 9. However, the pin elevating portion 60 may temporarily stop the descent of the substrate 9, then raise the substrate 9 and then lower the substrate 9 onto the upper surface 51a of the substrate holding portion 50.

FIG. 11 is a flowchart showing an example of the above-mentioned operation of the board processing device 10 when the board is carried in. In the example of FIG. 11, step S31 is further executed as compared with FIG. Step S31 is executed between steps S3 and S4. In this step S31, the control unit 20 controls the elevating drive unit 62 to raise the plurality of lift pins 61 to the third height position. The third height position is a position between the first height position and the second height position. Then, after stopping the lift pin 61 at the second height position for a predetermined period, the control unit 20 executes step S4.

According to this method of carrying in the substrate, in step S3, the substrate 9 is once brought close to the main body 51, and the temperature of the substrate 9 is raised by the radiant heat thereof. Even with this radiant heat, a large amount of heat is received in the central region of the substrate 9 facing the main body 51, so that the peripheral region of the substrate 9 is less likely to raise the temperature than the central region. That is, strictly speaking, the temperature variation of the substrate 9 may occur to some extent even in step S3.

In the following step S31, the substrate 9 is moved away from the main body 51. As a result, the amount of heat of the radiant heat received by the substrate 9 becomes small, the heat is transferred from the center to the periphery of the substrate 9, and the temperature variation in the substrate 9 is reduced.

Therefore, in the subsequent step S4, the substrate 9 is placed on the upper surface 51a of the main body 51 in a state where the temperature has been raised in advance with a lower temperature variation.

As described above, since the substrate 9 can be placed on the upper surface 51a of the main body 51 in a state where the temperature variation is lower while the temperature of the substrate 9 is raised in advance, the temperature variation during heating in step S4 can be further reduced. .. Therefore, the possibility that the substrate 9 is cracked can be further reduced.

Further, a case where step S4 is executed after the execution of step S31 without executing step S3 will also be considered. In this case, the amount of radiant heat received by the substrate 9 per unit time is reduced. Therefore, the time required for raising the temperature becomes long. On the other hand, by once executing step S3 to bring the substrate 9 closer to the main body 51, the amount of radiant heat received by the substrate 9 per unit time can be increased. Therefore, the time required for raising the temperature can be shortened. That is, the temperature of the substrate 9 can be raised more quickly while reducing the variation in the temperature of the substrate 9.

In the above example, the pin elevating portion 60 stops the lowering of the substrate 9 only once, and then the substrate 9 is placed on the upper surface 51a of the substrate holding portion 50, but the present invention is not necessarily limited to this. For example, the substrate 9 may be stopped stepwise at a plurality of height positions.

Further, in the above example, the pin elevating part 60 raises the temperature of the substrate 9 in advance by temporarily stopping the descent of the substrate 9. However, by lowering the descending speed of the substrate 9, the amount of radiant heat received from the main body 51 while the substrate 9 is descending may be increased to raise the temperature of the substrate 9 in advance. For example, the elevating drive unit 62 has a ball screw mechanism, and the lift pin 61 is moved up and down at a variable speed under the control of the control unit 20.

The lowering speed when the substrate 9 is lowered to the substrate holding portion 50 can be defined with reference to the ascending speed when the processed substrate 9 is raised from the substrate holding portion 50. Specifically, the pin elevating portion 60 lowers the untreated substrate 9 to the top of the upper surface 51a of the substrate holding portion 50 at a descending speed lower than the ascending speed. This makes it possible to improve the amount of radiant heat received by the substrate 9 while descending.

Further, the pin elevating portion 60 may change its descending speed while the substrate 9 is descending. For example, the pin elevating portion 60 may gradually or continuously reduce the descending speed as the substrate 9 approaches the upper surface 51a of the substrate holding portion 50.

Third embodiment.
The substrate processing apparatus 10 according to the third embodiment is the same as that of the first embodiment. However, the configuration of the main body 51 is different from that of the first embodiment.

FIG. 12 is a diagram schematically showing an example of the upper surface 51a of the main body 51 of the substrate holding portion 50. As illustrated in FIG. 12, a groove 512 extending along the circumferential direction is formed on the upper surface 51a of the main body 51. In the example of FIG. 12, the groove 512 is formed over the entire circumference and has a ring shape. The center of the ring substantially coincides with the center of the main body 51. The groove 512 is formed near the peripheral edge of the upper surface 51a of the main body 51. Here, in order to explain an example of the position of the groove 512 in the radial direction, the virtual circle VR1 is introduced. This virtual circle VR1 has a center at the same position as the center of the upper surface 51a, and is a circle that divides the upper surface 51a into two equal parts by area. The groove 512 is formed in a region outside the virtual circle VR1.

The groove 512 communicates with a suction device for suction, and the substrate 9 is sucked by air suction by the suction device. In the example of FIG. 12, a plurality of suction holes 513 are formed on the upper surface 51a of the main body 51. In the example of FIG. 12, the plurality of holes 513 have a circular shape in a plan view, and are formed inside the groove 512. In the example of FIG. 12, the groove 512 communicates with some of the plurality of holes 513. For example, a groove connecting the groove 512 and the hole 513 is formed on the upper surface 51a. In the example of FIG. 12, the groove connecting the groove 512 and the hole 513 extends along the radial direction. As a result, the groove 512 and the hole 513 can be connected in the shortest time.

The hole 513 penetrates the main body 51, the connecting portion 53, and the heater 32, and communicates with the hollow portion of the rotating shaft 41. The hollow portion communicates with a suction device (not shown), and the substrate 9 can be sucked and fixed in a plurality of holes 513 and grooves 512 by air suction by the suction device.

Since the groove 512 is formed in the vicinity of the peripheral edge of the substrate 9 along the circumferential direction of the substrate 9, the substrate 9 is sucked in a wide region in the circumferential direction in the vicinity of the peripheral edge thereof. Thereby, the suction force in the vicinity of the peripheral edge of the substrate 9 can be improved. Therefore, it is possible to reduce the possibility of warpage in the vicinity of the peripheral edge of the substrate 9 when the substrate 9 is heated.

Modification example.
The substrate 9 does not necessarily have to be a piezoelectric substrate. As a broader concept, a compound substrate containing a plurality of components may be adopted for the substrate 9. The crystal structure of this compound substrate is less likely to be uniform than that of a substrate composed of a single component. Therefore, due to the non-uniformity, cracks may easily occur in the substrate 9 even at a low temperature in the range of 80 ° C to 150 ° C. Therefore, when such a substrate 9 is used, the substrate processing apparatus 10 is particularly effective. That is, the substrate processing apparatus 10 can process the substrate 9 which is liable to be cracked due to the variation in temperature without causing the cracking.

Further, even if the substrate contains a single component, if the thickness is thin (for example, 150 [μm] or less), cracks may occur due to temperature variation. Therefore, even when such a substrate 9 is used, the substrate processing apparatus 10 is particularly effective.

Further, in the above example, although a photoresist liquid is used as the treatment liquid, it is not always limited to this. As the treatment liquid, various polymers can be adopted. For example, an adhesive such as an epoxy resin may be used as the treatment liquid, and an adhesive treatment may be performed in which a plurality of substrates 9 are bonded together. Also in this case, the temperature of the substrate 9 is raised in the range of, for example, about 80 degrees to 150 degrees.

Although the substrate heating and holding device and the substrate processing device have been shown and described in detail, the above description is exemplary and not limited in all embodiments. Therefore, the substrate heating and holding device and the substrate processing device can be appropriately modified or omitted from the embodiments. Also, various embodiments can be combined with each other.

10 Board processing device 30 Board heating and holding device 32 Heater 50 Board holding part 51 Main body part 60 Elevating part (pin elevating part)
70 Gas supply part 511 Groove 51a Top surface 52 Cylindrical wall part 521 Protrusion part 52a Tip surface 52b Inner peripheral surface 52c Outer surface

Claims (11)

A substrate holding portion having an upper surface in contact with the lower surface of the substrate and holding the substrate,
A heater that heats the substrate by transferring heat to the substrate via the substrate holding portion.
A processing liquid supply unit that supplies the processing liquid to the upper surface of the substrate held by the substrate holding unit, and a processing liquid supply unit.
With gas supply
Equipped with
The substrate holding portion is
A main body having the upper surface in contact with the lower surface of the substrate,
The inner peripheral surface facing the side surface of the main body portion across the first gap and the peripheral surface portion of the lower surface of the substrate connected to the inner peripheral surface and held by the substrate holding portion and facing each other across the second gap. A cylindrical wall portion including a tip surface to be formed and an outer peripheral surface connected to the tip surface.
A connecting portion that connects the main body portion and the cylindrical wall portion and has a hole communicating with the first void.
Have,
The gas supply unit is a substrate processing device that supplies a gas to the pores and blows the gas outward from the second void via the first void . The substrate processing apparatus according to claim 1.
A substrate processing apparatus in which the peripheral edge of the upper surface of the substrate holding portion is located between a line inside the peripheral edge of the substrate by 5 [mm] and the peripheral edge of the substrate in a plan view . The substrate processing apparatus according to claim 1 or 2 .
A substrate processing apparatus in which a groove extending along the circumferential direction is formed on at least one of the side surface of the main body and the inner peripheral surface of the cylindrical wall. The substrate processing apparatus according to claim 3 .
A substrate processing apparatus in which the gap between the main body portion and the cylindrical wall portion is narrower on the substrate side with respect to the groove than on the side opposite to the substrate with respect to the groove. The substrate processing apparatus according to claim 3 or 4 .
The other side of the side surface of the main body portion and the inner peripheral surface of the cylindrical wall portion has a protrusion at a position facing the groove.
A substrate processing device in which the protrusions project toward the groove and extend along the circumferential direction. The substrate processing apparatus according to any one of claims 1 to 5 .
The substrate processing apparatus is fixed to the substrate processing apparatus so that the main body portion and the cylindrical wall portion can be attached to and detached from each other in a state of being connected to each other. The substrate processing apparatus according to any one of claims 1 to 6 .
A substrate processing apparatus in which the peripheral edge of the tubular wall portion on the outer peripheral side of the tip surface is located on the same surface as or inside the peripheral edge of the substrate held by the substrate holding portion in a plan view. A substrate holding portion having an upper surface in contact with the lower surface of the substrate and holding the substrate,
A heater that heats the substrate by transferring heat to the substrate via the substrate holding portion.
An elevating part that elevates the substrate and
Equipped with
The elevating portion receives the substrate at a position away from the substrate holding portion, and in a state where the heater is heating the substrate holding portion, the substrate is lowered to the substrate holding portion, and then the substrate is described. A substrate processing device that temporarily stops the lowering of the substrate, then raises the substrate, and then lowers the substrate onto the upper surface of the substrate holding portion. The substrate processing apparatus according to claim 8.
A substrate processing apparatus in which the peripheral edge of the upper surface of the substrate holding portion is located between a line inside the peripheral edge of the substrate by 5 [mm] and the peripheral edge of the substrate in a plan view . A substrate holding portion having an upper surface in contact with the lower surface of the substrate and holding the substrate,
A heater that heats the substrate by transferring heat to the substrate via the substrate holding portion.
An elevating part that raises and lowers the substrate,
Equipped with
The elevating portion receives the substrate at a position away from the substrate holding portion, and while the heater is heating the substrate holding portion, the substrate is lowered to the substrate holding portion and then once. After that, the substrate is lowered to the upper surface of the substrate holding portion, and the elevating portion lowers the substrate to the top of the substrate holding portion at a speed lower than the speed at which the substrate is raised. , Board processing equipment. The substrate processing apparatus according to claim 10.
A substrate processing apparatus in which the peripheral edge of the upper surface of the substrate holding portion is located between a line inside the peripheral edge of the substrate by 5 [mm] and the peripheral edge of the substrate in a plan view.

Images