Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JP7092543B2 - Vacuum deposition equipment - Google Patents
[go: Go Back, main page]

JP7092543B2 - Vacuum deposition equipment - Google Patents

Vacuum deposition equipment Download PDF

Info

Publication number
JP7092543B2
JP7092543B2 JP2018082553A JP2018082553A JP7092543B2 JP 7092543 B2 JP7092543 B2 JP 7092543B2 JP 2018082553 A JP2018082553 A JP 2018082553A JP 2018082553 A JP2018082553 A JP 2018082553A JP 7092543 B2 JP7092543 B2 JP 7092543B2
Authority
JP
Japan
Prior art keywords
vapor
deposited
vapor deposition
vacuum chamber
regulation plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018082553A
Other languages
Japanese (ja)
Other versions
JP2019189901A (en
Inventor
政司 梅原
僚也 北沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2018082553A priority Critical patent/JP7092543B2/en
Publication of JP2019189901A publication Critical patent/JP2019189901A/en
Application granted granted Critical
Publication of JP7092543B2 publication Critical patent/JP7092543B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)

Description

本発明は、真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する真空蒸着装置に関し、より詳しくは、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備えるものに関する。 The present invention relates to a vacuum vapor deposition apparatus in which a thin-film deposition source is provided in a vacuum chamber, the vapor-film deposition material is sublimated or vaporized by the vapor-film deposition source in a vacuum atmosphere, and the sublimated or vaporized vapor-film deposition material is vapor-deposited on the object to be vapor-deposited. More specifically, the present invention relates to a device further provided with a regulating plate that regulates the scattering range of the vapor-deposited material scattered from the thin-film deposition source toward the vapor-film-deposited material.

この種の真空蒸着装置は例えば特許文献1で知られている。このものは、真空チャンバを有し、真空チャンバの底部には、成膜しようとする薄膜に応じて適宜選択される蒸着物質が収容される蒸着源としてのルツボが配置されている。そして、真空雰囲気中の真空チャンバ内で一方向に所定速度で被蒸着物を移動させながら、蒸着源にて蒸着物質を加熱することで昇華または気化させ、この昇華または気化した、蒸着源から飛散する蒸着物質を被蒸着物に付着、堆積させて所定膜厚の薄膜が蒸着されるようにしている。このとき、真空チャンバ内で被蒸着物と蒸着源との間に位置させて規制手段(遮蔽手段)を設け、昇華または気化させた蒸着物質の被蒸着物への蒸着領域を規制するようにしている。規制手段としては、蒸着源の周囲に位置させて真空チャンバの底部に立設した支柱で片持ち支持される板状部材(規制板)が用いられる。 This type of vacuum vapor deposition apparatus is known, for example, in Patent Document 1. This has a vacuum chamber, and a crucible as a vapor deposition source in which a vapor deposition substance appropriately selected according to a thin film to be formed is housed is arranged at the bottom of the vacuum chamber. Then, while moving the material to be vapor-deposited in one direction in a vacuum chamber in a vacuum atmosphere at a predetermined speed, the vapor-film-deposited material is sublimated or vaporized by heating it with a thin-film deposition source, and the sublimated or vaporized material is scattered from the vapor-film deposition source. The thin-film film to be deposited is adhered to and deposited on the object to be vapor-deposited so that a thin film having a predetermined film thickness is deposited. At this time, a regulating means (shielding means) is provided between the vapor-deposited material and the vapor-deposited source in the vacuum chamber to regulate the vapor-deposited region of the sublimated or vaporized vapor-filmed material on the vapor-deposited material. There is. As the regulating means, a plate-shaped member (regulating plate) that is cantilevered and supported by a support column that is located around the vapor deposition source and is erected at the bottom of the vacuum chamber is used.

ここで、蒸着時に蒸着源から飛散した蒸着物質は、被蒸着物だけでなく、規制板のうち蒸着源側を向く一方の面やその側面にも付着、堆積するが、通常は、蒸着源に近い規制板の自由端側でその堆積量が最も多くなり易い。すると、規制板の一方の面から自由端に位置する規制板の側面にかけて蒸着物質が堆積し、この堆積物が昇華または気化した蒸着物質の被蒸着物に向かう飛散経路を遮るように膨出する。このため、この膨出した堆積物によって被処理物における蒸着領域が狭く制限されてしまうという不具合が生じる。このような場合、板状部材を頻繁に交換する必要が生じ、これでは、量産性が損なわれる。 Here, the vapor deposition material scattered from the vapor deposition source at the time of vapor deposition adheres and deposits not only on the material to be deposited but also on one side of the regulation plate facing the vapor deposition source side and its side surface, but usually, it is deposited on the vapor deposition source. The amount of deposition tends to be the largest on the free end side of the near regulatory plate. Then, the vapor deposition material is deposited from one surface of the regulation plate to the side surface of the regulation plate located at the free end, and the deposit swells so as to block the scattering path of the sublimated or vaporized vaporized material toward the vapor deposition material. .. For this reason, there is a problem that the vapor deposition area in the object to be treated is narrowly limited by the bulging deposit. In such a case, it becomes necessary to replace the plate-shaped member frequently, which impairs mass productivity.

特開平7-98862号公報Japanese Unexamined Patent Publication No. 7-98862

本発明は、以上の点に鑑み、蒸着物質が付着、堆積しても、昇華または気化した蒸着物質の被蒸着物に向かう飛散経路を遮ることが可及的に抑制されるようにした規制板を有する真空蒸着装置を提供することをその課題とするものである。 In view of the above points, the present invention is a regulation plate that prevents the sublimated or vaporized vaporized material from blocking the scattering path toward the vaporized material as much as possible even if the vaporized material adheres and accumulates. It is an object of the present invention to provide a vacuum vapor deposition apparatus having the above.

上記課題を解決するために、真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する本発明の真空蒸着装置は、真空チャンバ内に設けた支持体で片持ち支持されて、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備え、規制板のうち蒸着源側を向く一方の面を下面、その他方を上面として、規制板の自由端に、下面と鈍角で且つ上面端部と鋭角で交差する傾斜面が形成されていることを特徴とする。 In order to solve the above problems, the present invention is provided with a thin-film deposition source in a vacuum chamber, and the vapor-filmed material is sublimated or vaporized by the thin-film deposition source in a vacuum atmosphere, and the sublimated or vaporized vapor-film-deposited material is vapor-deposited on the object to be vapor-deposited. The vacuum vapor deposition apparatus of No. 1 is cantilevered by a support provided in the vacuum chamber, and further includes a regulating plate that regulates the scattering range of the vapor-deposited material scattered from the vapor deposition source toward the object to be deposited. One surface facing the vapor deposition source side is the lower surface, and the other side is the upper surface, and an inclined surface that intersects the lower surface at an blunt angle and at a sharp angle with the upper surface end is formed at the free end of the regulation plate.

本発明によれば、真空チャンバ内で被蒸着物と蒸着源との間に位置させると共に、自由端側で昇華または気化させた蒸着物質の被蒸着物への蒸着領域を規制するように規制板を配置した状態で被蒸着物に対して蒸着すると、蒸着源から飛散した蒸着物質は、規制板のうち蒸着源側を向く規制板の一方の面及び傾斜面にも付着、堆積するが、規制板の側面が省略されるように傾斜面が形成されているため、この堆積物が昇華または気化した蒸着物質の被蒸着物に向かう飛散経路を遮るように膨出することが可及的に抑制される。その結果、堆積物によって被処理物における蒸着領域が狭く制限されるといった不具合が抑制され、規制板の交換頻度を上記従来例ものより大幅に少なくすることができる。 According to the present invention, the regulation plate is located between the vapor-deposited material and the vapor-deposited source in the vacuum chamber and regulates the vapor-deposited region of the vapor-deposited material sublimated or vaporized on the free end side on the vapor-deposited material. When vapor deposition is carried out on an object to be vapor-deposited in a state where Since the inclined surface is formed so that the side surface of the plate is omitted, it is possible to prevent the deposit from swelling so as to block the scattering path of the sublimated or vaporized vaporized material toward the deposited matter. Will be done. As a result, it is possible to suppress the problem that the vapor deposition area in the object to be treated is narrowly limited by the deposit, and the frequency of replacement of the regulation plate can be significantly reduced as compared with the above-mentioned conventional example.

ここで、蒸着源から飛散した蒸着物質が規制板に所定以上の厚さで堆積したとき、この堆積物が例えばパーティクルの発生源となる等の不具合が生じるため、所定の成膜時間を超えると、規制板を交換する必要がある。このとき、その都度、真空チャンバを大気開放して交換するのでは、量産性が損なわれる。本発明において、前記支持体が、前記蒸着源が設置される真空チャンバの面に立設された支柱で構成される場合、前記支柱に規制板の複数枚が取り付けられ、各規制板を蒸着物質の飛散範囲を制限しない退避位置に夫々移動させる移動手段を更に設ける構成を採用してもよい。この場合、前記移動手段は、最下段に位置する規制板のみを支持するアクチュエータを含み、当該規制板に所定以上の堆積物が形成されると、アクチュエータの動作により当該規制板が支柱に案内されて真空チャンバ底面側の退避位置に移動されるように構成すればよい。また、前記支持体が回転軸を有し、この回転軸を回転駆動する駆動モータを設けられている場合、前記規制板の複数枚が回転軸回りに間隔を存して取り付けられている構成を採用してもよい。更に、前記支持体が複数本のローラとローラの周囲に無端状に巻き掛けられた搬送ベルトとを有する場合、前記規制板の複数枚が搬送ベルトに間隔を存して取り付けられている構成を採用してもよい。これにより、真空チャンバを大気開放して規制板を交換する頻度を少なくでき、高い量産性を達成することができる。 Here, when the vapor-deposited substance scattered from the vapor-film deposition source is deposited on the regulation plate to a thickness of a predetermined value or more, the deposit causes a problem such as becoming a source of particles, and therefore, if the predetermined film-forming time is exceeded. , The regulation plate needs to be replaced. At this time, if the vacuum chamber is opened to the atmosphere and replaced each time, mass productivity is impaired. In the present invention, when the support is composed of columns erected on the bottom surface of the vacuum chamber in which the vapor deposition source is installed, a plurality of regulation plates are attached to the columns, and each regulation plate is vapor-deposited. A configuration may be adopted in which a moving means for moving the substance to a retracted position that does not limit the scattering range of the substance is further provided. In this case, the moving means includes an actuator that supports only the regulation plate located at the lowest stage, and when deposits of a predetermined value or more are formed on the regulation plate, the regulation plate is guided to the support column by the operation of the actuator. It may be configured to be moved to the retracted position on the bottom side of the vacuum chamber. Further, when the support has a rotating shaft and is provided with a drive motor for rotationally driving the rotating shaft, a configuration in which a plurality of the regulating plates are attached at intervals around the rotating shaft is provided. It may be adopted. Further, when the support has a plurality of rollers and a conveyor belt wound around the rollers in an endless manner, a configuration in which a plurality of the restricting plates are attached to the conveyor belt at intervals. It may be adopted. As a result, the vacuum chamber can be opened to the atmosphere and the frequency of replacing the regulation plate can be reduced, and high mass productivity can be achieved.

本発明の実施形態の規制板を備える真空蒸着装置を模式的に示す断面図。The cross-sectional view schematically which shows the vacuum vapor deposition apparatus provided with the control plate of embodiment of this invention. (a)は従来例の規制板への蒸着物質の堆積を説明する拡大図、(b)は本実施形態の規制板への蒸着物質の堆積を説明する拡大図。(A) is an enlarged view explaining the deposition of the vapor-deposited substance on the regulation plate of the conventional example, and (b) is an enlarged view explaining the deposition of the vapor-deposited substance on the regulation plate of the present embodiment. 図1に示す真空蒸着装置の一部を拡大して示す部分断面図。A partial cross-sectional view showing a part of the vacuum vapor deposition apparatus shown in FIG. 1 in an enlarged manner. 複数枚の規制板を設ける場合の変形例を説明する図。The figure explaining the deformation example when a plurality of regulation plates are provided. 複数枚の規制板を設ける場合の他の変形例を説明する図。The figure explaining another modification in the case of providing a plurality of regulation plates. 複数枚の規制板を設ける場合の更に他の変形例を説明する図。The figure explaining still another modification in the case of providing a plurality of regulation plates.

以下、図面を参照して、被成膜物を矩形の輪郭を持つ所定厚さのガラス基板(以下、「基板Sw」という)、蒸着物質5を、液相を経て気相に転移する金属等の材料とし、基板Swの一方の面に所定の薄膜を蒸着する場合を例に本発明の真空蒸着装置の実施形態を説明する。以下において、「上」、「下」といった方向を示す用語は、真空蒸着装置の設置姿勢を示す図1を基準にする。 Hereinafter, referring to the drawings, a glass substrate having a predetermined thickness having a rectangular outline (hereinafter referred to as “substrate Sw”), a metal or the like that transfers the vapor-deposited substance 5 to the gas phase via the liquid phase, etc. An embodiment of the vacuum vapor deposition apparatus of the present invention will be described by taking as an example a case where a predetermined thin film is vapor-deposited on one surface of the substrate Sw. In the following, the terms indicating the directions such as "up" and "down" are based on FIG. 1, which indicates the installation posture of the vacuum vapor deposition apparatus.

図1を参照して、DMは、本実施形態の真空蒸着装置である。真空蒸着装置DMは、真空チャンバ1を備え、真空チャンバ1には、特に図示して説明しないが、排気管を介して真空ポンプが接続され、所定圧力(真空度)に真空引きして保持できるようになっている。また、真空チャンバ1の上部には基板搬送装置2が設けられている。基板搬送装置2は、成膜面としての下面を開放した状態で基板Swを保持するキャリア21を有し、図外の駆動装置によってキャリア21、ひいては基板Swを真空チャンバ1内の一方向に所定速度で移動するようになっている。基板搬送装置2としては公知のものが利用できるため、これ以上の説明は省略する。また、以下において、蒸着源4に対する基板Swの相対移動方向をX軸方向、X軸方向に直交する基板Swの幅方向をY軸方向、X軸方向及びY軸方向に直交する図1中の上下方向をZ軸方向とする。 With reference to FIG. 1, DM is a vacuum vapor deposition apparatus of this embodiment. The vacuum vapor deposition apparatus DM includes a vacuum chamber 1, and although not particularly illustrated, a vacuum pump is connected to the vacuum chamber 1 via an exhaust pipe, and the vacuum chamber 1 can be evacuated to a predetermined pressure (vacuum degree) and held. It has become like. Further, a substrate transfer device 2 is provided above the vacuum chamber 1. The substrate transfer device 2 has a carrier 21 that holds the substrate Sw in a state where the lower surface as a film forming surface is open, and the carrier 21 and thus the substrate Sw are predetermined in one direction in the vacuum chamber 1 by a drive device (not shown). It is designed to move at speed. Since a known substrate transfer device 2 can be used, further description thereof will be omitted. Further, in the following, the relative movement direction of the substrate Sw with respect to the vapor deposition source 4 is the X-axis direction, and the width direction of the substrate Sw orthogonal to the X-axis direction is orthogonal to the Y-axis direction, the X-axis direction and the Y-axis direction in FIG. The vertical direction is the Z-axis direction.

基板搬送装置2によって搬送される基板Swと後述の蒸着源4との間には、板状のマスクプレート3が設けられている。本実施形態では、マスクプレート3は、基板Swと一体に取り付けられて基板Swと共に基板搬送装置2によって搬送されるようになっている。なお、マスクプレート3は、真空チャンバ1に予め固定配置しておくこともできる。マスクプレート3には、板厚方向に貫通する複数の開口31が形成され、これら開口31がない位置にて蒸着物質の基板Swに対する付着範囲が制限されることで所定のパターンで基板Swに成膜されるようになっている。マスクプレート3としては、インバー、アルミ、アルミナやステンレス等の金属製の他、ポリイミド等の樹脂製のものが用いられる。そして、真空チャンバ1の底面には、X軸方向に移動される基板Swに対向させて本実施形態の蒸着源4が設けられている。 A plate-shaped mask plate 3 is provided between the substrate Sw transported by the substrate transport device 2 and the vapor deposition source 4 described later. In the present embodiment, the mask plate 3 is integrally attached to the substrate Sw and is conveyed together with the substrate Sw by the substrate transfer device 2. The mask plate 3 may be fixedly arranged in the vacuum chamber 1 in advance. A plurality of openings 31 penetrating in the plate thickness direction are formed in the mask plate 3, and the adhesion range of the vapor-deposited substance to the substrate Sw is limited at a position where these openings 31 do not exist, so that the substrate Sw is formed in a predetermined pattern. It is designed to be filmed. As the mask plate 3, a metal such as Invar, aluminum, alumina or stainless steel, or a resin such as polyimide is used. The bottom surface of the vacuum chamber 1 is provided with the vapor deposition source 4 of the present embodiment facing the substrate Sw that is moved in the X-axis direction.

蒸着源4は蒸着物質5を収容する収容箱41を有する。蒸着物質5としては、基板Swに成膜しようとする薄膜に応じて金属や樹脂等の材料から適宜選択され、顆粒状またはタブレット状のものが利用される。収容箱41の下部には、金属製の受け皿42が設けられ、受け皿42上に蒸着物質5が設置されるようになっている。受け皿42と収容箱41の底壁との間には加熱手段(図示せず)が設けられ、受け皿42を介して蒸着物質5が気化温度まで加熱されるようになっている。加熱手段としては、シースヒータやランプヒータ等の公知のものが利用でき、このような加熱手段は収容箱41の外側に配置することもできる。なお、特に図示して説明しないが、収容箱41内には、受け皿42の上方に位置させて分散板が設けられ、気化した蒸着物質5を後述の各噴射ノズルから略均等な流量で噴射できるようになっている。 The vapor deposition source 4 has a storage box 41 for accommodating the vapor deposition substance 5. The vapor-deposited substance 5 is appropriately selected from materials such as metal and resin according to the thin film to be formed on the substrate Sw, and granules or tablets are used. A metal saucer 42 is provided at the lower part of the storage box 41, and the vapor-deposited substance 5 is installed on the saucer 42. A heating means (not shown) is provided between the saucer 42 and the bottom wall of the storage box 41, and the vaporized substance 5 is heated to the vaporization temperature via the saucer 42. As the heating means, known means such as a sheath heater and a lamp heater can be used, and such a heating means can be arranged outside the storage box 41. Although not particularly illustrated and described, a dispersion plate is provided in the storage box 41 so as to be located above the saucer 42, and the vaporized vaporized substance 5 can be injected from each of the injection nozzles described later at a substantially uniform flow rate. It has become like.

収容箱41の上面(基板Swとの対向面)41aには、所定高さの筒体で構成される、気化した蒸着物質5を噴射する噴射ノズル43a,43bがY軸方向に所定の間隔で(本実施形態では、6本)列設されている。この場合、Y軸方向両端に位置する2本の噴射ノズル43aは、その孔軸がZ軸方向に対して所定角度でY軸方向外方に傾斜するように立設され、それ以外の各噴射ノズル43bは、Z軸方向に沿って立設されている。なお、噴射ノズル43a,43bの本数及び相互間の間隔、傾斜させる噴射ノズル43a,43bの本数及びその傾斜角、各噴射ノズル43a,43bのノズル径や、上面41aからノズル先端までの高さは、例えば基板Swに蒸着したときのY軸方向の膜厚分布や、蒸着中の(上面41aに堆積したものによる)ノズル詰まりの回避を考慮して適宜設定される。 On the upper surface (opposite surface of the substrate Sw) 41a of the storage box 41, injection nozzles 43a and 43b for injecting the vaporized vaporized substance 5 composed of a cylinder having a predetermined height are arranged at predetermined intervals in the Y-axis direction. (6 in this embodiment) are arranged in a row. In this case, the two injection nozzles 43a located at both ends in the Y-axis direction are erected so that their hole axes are inclined outward in the Y-axis direction at a predetermined angle with respect to the Z-axis direction, and each of the other injection nozzles. The nozzle 43b is erected along the Z-axis direction. The number of injection nozzles 43a and 43b and the distance between them, the number of injection nozzles 43a and 43b to be tilted and their inclination angles, the nozzle diameter of each injection nozzle 43a and 43b, and the height from the upper surface 41a to the tip of the nozzle are For example, it is appropriately set in consideration of the film thickness distribution in the Y-axis direction when vapor-deposited on the substrate Sw and the avoidance of nozzle clogging (due to those deposited on the upper surface 41a) during vapor deposition.

また、真空チャンバ1の底面には、蒸着源4のY軸方向両側に位置させて支持体としての支柱6が夫々立設され、その先端部には、上下方向で基板Swと蒸着源4との間に位置させて規制板7が片持ち支持されている。そして、真空雰囲気中の真空チャンバ1内で収容箱41の受け皿42上に設置した固体の蒸着物質5を加熱すると、蒸着物質5が液相を経て気相に転移し、この気化した蒸着物質5が各噴射ノズル43a,43b内を通って基板Swに向けて飛散し、蒸着物質5が付着、堆積して蒸着される。このとき、規制板7により気化させた蒸着物質5の基板Swへの蒸着領域が規制され(つまり、Y軸方向両端に位置する噴射ノズル43aと基板SwのY軸方向両端とを結ぶ規制線RlよりY軸方向への蒸着物質5の飛散が制限され)、例えば、基板SwにおけるY軸方向に沿う膜厚分布を均等にできるようになっている。 Further, on the bottom surface of the vacuum chamber 1, columns 6 as supports are erected on both sides of the vapor deposition source 4 in the Y-axis direction, and at the tip thereof, the substrate Sw and the vapor deposition source 4 are arranged in the vertical direction. The regulation plate 7 is cantilevered and supported by being positioned between the two. Then, when the solid vaporized substance 5 installed on the saucer 42 of the storage box 41 is heated in the vacuum chamber 1 in a vacuum atmosphere, the vaporized substance 5 is transferred to the gas phase via the liquid phase, and the vaporized vaporized substance 5 is transferred to the gas phase. Scatters toward the substrate Sw through the injection nozzles 43a and 43b, and the vapor deposition substance 5 adheres, accumulates, and is vaporized. At this time, the vapor deposition region of the vapor-filmed substance 5 vaporized by the regulation plate 7 on the substrate Sw is restricted (that is, the regulation line Rl connecting the injection nozzles 43a located at both ends in the Y-axis direction and both ends in the Y-axis direction of the substrate Sw). The scattering of the vapor-filmed substance 5 in the Y-axis direction is further limited), for example, the film thickness distribution along the Y-axis direction on the substrate Sw can be made uniform.

ところで、蒸着時に蒸着源4から飛散した蒸着物質5は、基板Swの下面だけでなく、規制板7のうち蒸着源4側を向く下面やその側面にも付着、堆積するが、通常は、蒸着源4に近い規制板7の自由端側でその堆積量が最も多くなる。この場合、従来例の規制板70では、図2(a)に示すように、その下面70aからY軸方向に位置する自由端側の側面70bにかけて蒸着物質5が堆積し、この堆積物51が、蒸着源4から飛散した蒸着物質5の基板Swに向かう飛散経路を遮るように(即ち、規制線Rlを跨いでY軸方向内方まで)膨出する。このため、この膨出した堆積物51によって基板Swにおける蒸着領域が狭く制限されてしまうという不具合が生じる。 By the way, the vapor deposition substance 5 scattered from the vapor deposition source 4 at the time of vapor deposition adheres and deposits not only on the lower surface of the substrate Sw but also on the lower surface of the regulation plate 7 facing the vapor deposition source 4 side and its side surface. The deposition amount is the largest on the free end side of the regulation plate 7 near the source 4. In this case, in the conventional regulation plate 70, as shown in FIG. 2A, the vapor deposition material 5 is deposited from the lower surface 70a to the side surface 70b on the free end side located in the Y-axis direction, and the deposit 51 is deposited. , It swells so as to block the scattering path of the vapor deposition material 5 scattered from the vapor deposition source 4 toward the substrate Sw (that is, across the regulation line Rl and inward in the Y-axis direction). For this reason, the bulging deposit 51 causes a problem that the vapor deposition region in the substrate Sw is narrowly limited.

そこで、本実施形態では、図2(b)に示すように、規制板7の自由端に、規制板7のうち蒸着源4側を向くその下面71と鈍角で且つ上面72の端部と鋭角で交差する傾斜面73を形成することとした(つまり、Y軸方向に位置する規制板7の自由端側の側面が省略されるようにした)。この場合、規制板7の下面71と傾斜面73とが交差するときの角度α1が、5度~45度の範囲内であることが好ましい。これにより、蒸着源4から飛散した蒸着物質5は、規制板7の下面71や傾斜面73にも付着、堆積するが、この堆積物51が、蒸着源4から飛散した蒸着物質5の基板Swに向かう飛散経路を遮るように(即ち、規制線Rlを跨いでY軸方向内方まで)膨出することが可及的に抑制される。その結果、堆積物51によって基板Swにおける蒸着領域が狭く制限されるといった不具合が抑制され、規制板7の交換頻度を上記従来例ものより大幅に少なくすることができる。 Therefore, in the present embodiment, as shown in FIG. 2B, the free end of the regulation plate 7 has an obtuse angle with the lower surface 71 of the regulation plate 7 facing the vapor deposition source 4 side and an acute angle with the end of the upper surface 72. It was decided to form the inclined surfaces 73 intersecting with each other (that is, the side surface on the free end side of the restricting plate 7 located in the Y-axis direction was omitted). In this case, the angle α1 when the lower surface 71 of the regulation plate 7 and the inclined surface 73 intersect is preferably in the range of 5 degrees to 45 degrees. As a result, the vapor deposition material 5 scattered from the vapor deposition source 4 adheres to and deposits on the lower surface 71 and the inclined surface 73 of the regulation plate 7, but the deposit 51 is the substrate Sw of the vapor deposition material 5 scattered from the vapor deposition source 4. It is suppressed as much as possible to bulge so as to block the scattering path toward (that is, to the inside in the Y-axis direction across the regulation line Rl). As a result, the problem that the vapor deposition region in the substrate Sw is narrowly limited by the deposit 51 is suppressed, and the replacement frequency of the regulation plate 7 can be significantly reduced as compared with the conventional example.

ところで、蒸着源4の噴射ノズル43a,43bから飛散した蒸着物質5が規制板7の下面71や傾斜面73に所定以上の厚さで堆積したとき、この堆積物51が例えばパーティクルの発生源となる等の不具合が生じる。このため、所定の成膜時間を超えると、規制板7を交換する必要があるが、その都度、真空チャンバ1を大気開放して交換するのでは、量産性が損なわれる。本実施形態では、図3に示すように、支柱6の上端部に、同一形態を持つ複数枚の規制板7が片持ち支持されるようにしている。支柱6には、この支柱6から真空チャンバ1のY軸方向内方に向けて出没自在な支持竿81を有する2個のアクチュエータ8a,8bが上下方向に間隔を存して設けられている。この場合、各アクチュエータ8a,8bは、規制板7の面積(つまり、X軸方向の長さ)に応じて、X軸方向に間隔を置いて複数設けることができ、また、支持竿81の先端にX軸方向に長手のものを更に設けることもできる。各アクチュエータ8a,8bとしては、空気式や電動式など公知のものが利用できるため、ここでは詳細な説明は省略する。 By the way, when the vapor-deposited substance 5 scattered from the injection nozzles 43a and 43b of the vapor-film deposition source 4 is deposited on the lower surface 71 or the inclined surface 73 of the regulation plate 7 with a thickness of a predetermined value or more, the deposit 51 is used as a source of particles, for example. Problems such as Therefore, when the predetermined film formation time is exceeded, it is necessary to replace the regulation plate 7, but if the vacuum chamber 1 is opened to the atmosphere and replaced each time, mass productivity is impaired. In the present embodiment, as shown in FIG. 3, a plurality of restricting plates 7 having the same configuration are cantilevered and supported at the upper end of the support column 6. The support column 6 is provided with two actuators 8a and 8b having a support rod 81 that can freely appear and disappear inward in the Y-axis direction of the vacuum chamber 1 from the support column 6 at intervals in the vertical direction. In this case, a plurality of actuators 8a and 8b can be provided at intervals in the X-axis direction according to the area of the regulation plate 7 (that is, the length in the X-axis direction), and the tip of the support rod 81 can be provided. It is also possible to further provide a longitudinal one in the X-axis direction. As the actuators 8a and 8b, known actuators such as pneumatic type and electric type can be used, so detailed description thereof will be omitted here.

下方に位置する第1アクチュエータ8aは、最下段に位置する規制板7のみを支持し、この状態では、規制板7の自由端が、規制線Rl上に位置するようになっている。また、第1アクチュエータ8aより上方に位置する支柱6の部分は、Y軸方向外方に向けて傾斜され、この傾斜させた支柱6の部分に第2アクチュエータ8bが設けられている。第2アクチュエータ8bの支持竿81は、複数枚の規制板7が重ねられた状態で支持し、この状態では、各規制板7の自由端が規制線Rl上から所定間隔を存するようにY軸方向外方にオフセットされ、蒸着源4から飛散した蒸着物質5の基板Swに向かう飛散経路を遮らないようになっている(図1参照)。そして、第1アクチュエータ8aで支持された最下段に位置する規制板7に所定以上の堆積物51が形成されると、第1アクチュエータ8aの支持竿81が没入位置に移動され、その規制板7が支柱6に案内されて真空チャンバ1の底面(退避位置)まで移動される。 The first actuator 8a located below supports only the regulation plate 7 located at the lowest stage, and in this state, the free end of the regulation plate 7 is positioned on the regulation line Rl. Further, the portion of the support column 6 located above the first actuator 8a is inclined outward in the Y-axis direction, and the second actuator 8b is provided on the portion of the inclined column 6. The support rod 81 of the second actuator 8b is supported in a state where a plurality of regulation plates 7 are stacked, and in this state, the Y axis is provided so that the free ends of the respective regulation plates 7 are spaced from the regulation line Rl. It is offset outward in the direction so as not to block the scattering path of the vapor deposition material 5 scattered from the vapor deposition source 4 toward the substrate Sw (see FIG. 1). Then, when a predetermined or more deposit 51 is formed on the lowermost restricting plate 7 supported by the first actuator 8a, the support rod 81 of the first actuator 8a is moved to the immersion position, and the restricting plate 7 is moved to the immersion position. Is guided by the support column 6 and moved to the bottom surface (retracted position) of the vacuum chamber 1.

次に、第1アクチュエータ8aの支持竿81を突出位置(図3に示す状態)に移動させた後、第2アクチュエータ8bの支持竿81を没入位置に移動させると、第2アクチュエータ8bで支持された規制板7のうち最下段のものが下降して第1アクチュエータ8aで支持される(成膜位置)。本実施形態では、支柱6に設けられる各アクチュエータ8a,8bが各規制板7を蒸着物質の飛散範囲を制限しない退避位置に夫々移動させる移動手段を構成する。以降、この操作が繰り返されて、最上段に位置する規制板7に所定以上の堆積物51が形成されるまで長時間にわたって規制板7により気化させた蒸着物質5の基板Swへの蒸着領域が規制される。これにより、堆積物51に起因した規制板7自体の交換頻度を少なくできることと相俟って、真空チャンバ1を大気開放して各規制板7を交換する頻度を少なくでき(メンテナンスサイクルを長くでき)、高い量産性を達成することができる。 Next, when the support rod 81 of the first actuator 8a is moved to the protruding position (state shown in FIG. 3) and then the support rod 81 of the second actuator 8b is moved to the immersion position, it is supported by the second actuator 8b. Of the regulation plates 7, the lowest one is lowered and supported by the first actuator 8a (film formation position). In the present embodiment, the actuators 8a and 8b provided on the support column 6 constitute a moving means for moving each of the regulating plates 7 to a retracted position that does not limit the scattering range of the vapor-deposited substance. After that, this operation is repeated, and the vapor deposition region of the vapor-deposited substance 5 vaporized by the regulation plate 7 on the substrate Sw for a long time until the deposit 51 above a predetermined value is formed on the regulation plate 7 located at the uppermost stage is formed. Be regulated. As a result, the frequency of replacement of the regulation plate 7 itself due to the deposit 51 can be reduced, and the frequency of replacement of each regulation plate 7 by opening the vacuum chamber 1 to the atmosphere can be reduced (maintenance cycle can be lengthened). ), High mass productivity can be achieved.

以上、本発明の実施形態について説明したが、本発明の技術思想の範囲を逸脱しない限り、種々の変形が可能である。上記実施形態では、蒸着源4として、収容箱41の上面41aに噴射ノズル43を列設したもの(所謂ラインソース)を用いるものを例に説明したが、これに限定されるものではなく、蒸着源4がルツボで構成されるような場合も本発明は適用可能である。また、上記実施形態では、蒸着源4のY軸方向両側に規制板7を配置して蒸着物質5の基板Swへの蒸着領域を規制するものを例に説明したが、これに限定されるものではない。特に図示して説明しないが、例えば上記蒸着源4にて収容箱41の上面41aに支柱を立設し、上記と同様にしてこの支柱に複数枚の規制板を設け、いずれかの噴射ノズル43a,43bからの蒸着物質5の飛散範囲を規制するものにも本発明は適用できる。 Although the embodiments of the present invention have been described above, various modifications are possible as long as they do not deviate from the scope of the technical idea of the present invention. In the above embodiment, as the vapor deposition source 4, a method in which injection nozzles 43 are arranged in a row on the upper surface 41a of the storage box 41 (so-called line source) has been described as an example, but the invention is not limited to this, and vapor deposition is not limited to this. The present invention is also applicable when the source 4 is composed of a crucible. Further, in the above embodiment, the case where the regulating plates 7 are arranged on both sides of the vapor deposition source 4 in the Y-axis direction to regulate the vapor deposition region of the vapor deposition substance 5 on the substrate Sw has been described as an example, but the present invention is limited to this. is not. Although not particularly illustrated and described, for example, in the vapor deposition source 4, a support column is erected on the upper surface 41a of the storage box 41, and a plurality of regulation plates are provided on the support column in the same manner as described above, and one of the injection nozzles 43a is provided. The present invention can also be applied to those that regulate the scattering range of the vapor-filmed substance 5 from 43b.

また、上記実施形態では、規制板7を片持ち支持する支持体として支柱6を用いるものを例に説明したが、これに限定されるものではなく、例えば、真空チャンバ1の内側壁で規制板7を支持することができ、そのような場合には真空チャンバ1の内側壁に移動手段が設けられる。また、移動手段として2個のアクチュエータ8a,8bを用いるものを例に説明したが、所定以上の堆積物51が形成された規制板7を支柱6に沿って退避位置に移動できるものであれば、その形態は問わない。 Further, in the above embodiment, the support using the support column 6 as the support for cantilevering the regulation plate 7 has been described as an example, but the present invention is not limited to this, and for example, the regulation plate is formed on the inner wall surface of the vacuum chamber 1. 7 can be supported, in which case a moving means is provided on the inner wall of the vacuum chamber 1. Further, although the case of using two actuators 8a and 8b as the moving means has been described as an example, if the restricting plate 7 on which the deposit 51 having a predetermined value or more is formed can be moved to the evacuation position along the support column 6. , The form does not matter.

図4に示す変形例では、X軸方向に間隔を存して2本の板状の支柱60が真空チャンバ1に立設され、両支柱60には、複数本の回転軸61がZ軸方向に間隔を存して軸支され、各回転軸61に規制板7が揺動自在に取り付けられている。そして、規制板7に所定以上の堆積物51が形成されると、移動手段としての駆動モータDmで回転軸61を回転駆動させて、各規制板7を真空チャンバ1の内側壁に重なる位置(退避位置)に夫々移動できるようにしている。この場合、堆積物51が形成された各規制板7を真空チャンバ1の内側壁に沿って重ねることができるように、各回転軸61は、Z軸方向上方に向かうに従い、Y軸方向内方に向けて偏心されている。また、未使用の規制板7が蒸着源4から飛散した蒸着物質5の基板Swに向かう飛散経路を遮らないように規制板7のY軸方向の長さは、Z軸方向上方に向かうに従い、短くなるように設定されている。 In the modified example shown in FIG. 4, two plate-shaped columns 60 are erected in the vacuum chamber 1 with an interval in the X-axis direction, and a plurality of rotating shafts 61 are provided in the Z-axis directions on both columns 60. A regulation plate 7 is swingably attached to each rotating shaft 61 so as to be pivotally supported at intervals. Then, when a predetermined or more deposit 51 is formed on the regulation plate 7, the rotary shaft 61 is rotationally driven by the drive motor Dm as a moving means, and the respective regulation plates 7 are overlapped with the inner wall surface of the vacuum chamber 1 (positions where the respective regulation plates 7 are overlapped with the inner wall surface of the vacuum chamber 1. It is possible to move to each of the evacuation positions). In this case, each rotation axis 61 is inward in the Y-axis direction as it goes upward in the Z-axis direction so that the regulation plates 7 on which the deposit 51 is formed can be stacked along the inner wall surface of the vacuum chamber 1. Is eccentric towards. Further, the length of the regulation plate 7 in the Y-axis direction increases in the upward direction of the Z-axis so that the unused regulation plate 7 does not block the scattering path of the vapor-filming substance 5 scattered from the vapor deposition source 4 toward the substrate Sw. It is set to be short.

また、図5に示す他の変形例では、真空チャンバ1内にX軸方向にのびる単一の回転軸90が設けられ、回転軸90の周囲に、周方向に間隔を置いて複数枚の規制板7が設けられている。そして、一の規制板7に所定以上の堆積物51が形成されると、移動手段としての駆動モータDmで回転軸90を所定角だけ回転駆動させて、次の規制板7により、蒸着物質5の基板Swへの蒸着領域が規制されるようにしている。 Further, in another modification shown in FIG. 5, a single rotation shaft 90 extending in the X-axis direction is provided in the vacuum chamber 1, and a plurality of rotation shafts 90 are restricted around the rotation shaft 90 at intervals in the circumferential direction. A plate 7 is provided. Then, when deposits 51 of a predetermined value or more are formed on one regulation plate 7, the rotary shaft 90 is rotationally driven by a predetermined angle by the drive motor Dm as a means of transportation, and the next regulation plate 7 is used to drive the vapor-deposited substance 5 by the next regulation plate 7. The vapor deposition area on the substrate Sw is regulated.

更に、図6に示す更に他の変形例では、真空チャンバ1内にY軸方向に間隔を置いてX軸方向にのびる少なくとも2個のローラ91と、各ローラ91の周囲に無端状に巻き掛けられた搬送ベルト92とを備え、搬送ベルト92に間隔をおいて複数枚の規制板7を設けている。そして、一の規制板7に所定以上の堆積物51が形成されると、図示省略のモータでローラ91を間欠的に回転駆動させて、次の規制板7により、蒸着物質5の基板Swへの蒸着領域が規制されるようにしている。 Further, in still another modification shown in FIG. 6, at least two rollers 91 extending in the X-axis direction at intervals in the Y-axis direction in the vacuum chamber 1 and winding around each roller 91 in an endless manner. The transport belt 92 is provided, and a plurality of regulating plates 7 are provided on the transport belt 92 at intervals. Then, when a predetermined or more deposit 51 is formed on one regulation plate 7, the roller 91 is intermittently rotationally driven by a motor (not shown), and the next regulation plate 7 is used to transfer the vapor deposition material 5 to the substrate Sw. The vapor deposition area is regulated.

DM…真空蒸着装置、1…真空チャンバ、4…蒸着源、5…蒸着物質、51…蒸着物質の堆積物、6…支柱(支持体)、7…規制板、71…規制板の下面、72…規制板の上面、73…傾斜面、8a、8b…アクチュエータ(移動手段)、91…ローラ、92…搬送ベルト、Dm…駆動モータ、Sw…基板(被成膜物)。 DM ... Vacuum vapor deposition equipment, 1 ... Vacuum chamber, 4 ... Evaporation source, 5 ... Evaporation material, 51 ... Evaporation material deposit, 6 ... Support (support), 7 ... Regulation plate, 71 ... Bottom surface of regulation plate, 72 ... The upper surface of the regulation plate, 73 ... Inclined surface, 8a, 8b ... Actuator (moving means), 91 ... Roller, 92 ... Conveyance belt, Dm ... Drive motor, Sw ... Substrate (film-film deposition).

Claims (2)

真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する真空蒸着装置であって、
真空チャンバ内に設けた支持体で片持ち支持されて、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備え、規制板のうち蒸着源側を向く一方の面を下面、その他方を上面として、規制板の自由端に、下面と鈍角で且つ上面端部と鋭角で交差する傾斜面が形成されるものにおいて、
前記支持体が、前記蒸着源が設置される真空チャンバの面に立設された支柱で構成され、前記支柱に規制板の複数枚が取り付けられ、各規制板を蒸着物質の飛散範囲を制限しない退避位置に夫々移動させる移動手段を更に設け、
前記移動手段は、最下段に位置する規制板のみを支持するアクチュエータを含み、当該規制板に所定以上の堆積物が形成されると、アクチュエータの動作により当該規制板が支柱に案内されて真空チャンバ底面側の退避位置に移動されるように構成したことを特徴とする真空蒸着装置。
A vacuum vapor deposition apparatus in which a thin-film deposition source is provided in a vacuum chamber, the vapor-film deposition material is sublimated or vaporized by this vapor-film deposition source in a vacuum atmosphere, and the sublimated or vaporized vapor-film deposition material is vapor-deposited on the object to be vapor-deposited.
It is cantilevered by a support provided in the vacuum chamber, and is further equipped with a regulating plate that regulates the scattering range of the vapor-deposited material that scatters from the vapor deposition source toward the object to be deposited. In a case where an inclined surface that intersects the lower surface at an obtuse angle and at an acute angle with the upper surface end is formed at the free end of the regulation plate, with the surface of the surface as the lower surface and the other side as the upper surface.
The support is composed of columns erected on the bottom surface of the vacuum chamber in which the vapor deposition source is installed, and a plurality of regulation plates are attached to the columns, and each regulation plate limits the scattering range of the vapor deposition material. Further provision of transportation means to move each to the evacuation position
The moving means includes an actuator that supports only the regulation plate located at the lowest stage, and when deposits equal to or larger than a predetermined value are formed on the regulation plate, the regulation plate is guided to the support column by the operation of the actuator to guide the vacuum chamber. A vacuum vapor deposition apparatus characterized in that it is configured to be moved to a retracted position on the bottom surface side.
真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する真空蒸着装置であって、
真空チャンバ内に設けた支持体で片持ち支持されて、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備え、規制板のうち蒸着源側を向く一方の面を下面、その他方を上面として、規制板の自由端に、下面と鈍角で且つ上面端部と鋭角で交差する傾斜面が形成されるものにおいて、
前記支持体が回転軸を有し、この回転軸を回転駆動する駆動モータを設け、前記規制板の複数枚が回転軸回りに間隔を存して取り付けられていることを特徴とする真空蒸着装置。
A vacuum vapor deposition apparatus in which a thin-film deposition source is provided in a vacuum chamber, the vapor-film deposition material is sublimated or vaporized by this vapor-film deposition source in a vacuum atmosphere, and the sublimated or vaporized vapor-film deposition material is vapor-deposited on the object to be vapor-deposited.
It is cantilevered by a support provided in the vacuum chamber, and is further equipped with a regulating plate that regulates the scattering range of the vapor-deposited material that scatters from the vapor deposition source toward the object to be deposited. In a case where an inclined surface that intersects the lower surface at an obtuse angle and at an acute angle with the upper surface end is formed at the free end of the regulation plate, with the surface of the surface as the lower surface and the other side as the upper surface.
The support has a rotating shaft, a drive motor for rotationally driving the rotating shaft is provided, and a plurality of the regulating plates are attached around the rotating shaft at intervals. Device.
JP2018082553A 2018-04-23 2018-04-23 Vacuum deposition equipment Active JP7092543B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018082553A JP7092543B2 (en) 2018-04-23 2018-04-23 Vacuum deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018082553A JP7092543B2 (en) 2018-04-23 2018-04-23 Vacuum deposition equipment

Publications (2)

Publication Number Publication Date
JP2019189901A JP2019189901A (en) 2019-10-31
JP7092543B2 true JP7092543B2 (en) 2022-06-28

Family

ID=68391545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018082553A Active JP7092543B2 (en) 2018-04-23 2018-04-23 Vacuum deposition equipment

Country Status (1)

Country Link
JP (1) JP7092543B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7473520B2 (en) * 2021-12-20 2024-04-23 キヤノントッキ株式会社 Sputtering Equipment
JP2024047231A (en) * 2022-09-26 2024-04-05 キヤノントッキ株式会社 Film forming apparatus and film forming method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012140695A (en) 2011-01-06 2012-07-26 Nitto Denko Corp Vapor deposition device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0765370A (en) * 1993-08-27 1995-03-10 Kao Corp Magnetic recording medium manufacturing equipment
JPH0793752A (en) * 1993-09-24 1995-04-07 Kao Corp Magnetic recording medium manufacturing equipment
JPH0798863A (en) * 1993-09-30 1995-04-11 Kao Corp Magnetic recording medium manufacturing equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012140695A (en) 2011-01-06 2012-07-26 Nitto Denko Corp Vapor deposition device

Also Published As

Publication number Publication date
JP2019189901A (en) 2019-10-31

Similar Documents

Publication Publication Date Title
KR100532657B1 (en) Apparatus for controlling deposition zone of homogeneously mixed layer in multi source co-deposition
CN102150234B (en) Film-forming apparatus, film-forming method, and semiconductor device
JP7092543B2 (en) Vacuum deposition equipment
US20170159168A1 (en) Thin Film Deposition Apparatus Having Plurality of Evaporation Sources
CN102365712A (en) Web substrate deposition system
KR101191750B1 (en) Apparatus for depositing thin film using at least two vaporization sources
KR20180030573A (en) Evaporation source and evaporation apparatus and evaporation film manufacturing method
KR102486851B1 (en) Vacuum Deposition Equipment and Method for Coating Substrates
TWI602936B (en) Thin film deposition source, thin film deposition apparatus and thin film deposition method using the same
US20170159167A1 (en) Thin Film Deposition Apparatus Having Plurality of Crucibles
KR102671537B1 (en) Vacuum deposition facility and method for coating a substrate
KR102170484B1 (en) Vacuum evaporation equipment
KR101430658B1 (en) Atomic layer deposition system
KR101907955B1 (en) Evaporation source for adjusting a flux
TWI835440B (en) Evaporation device and evaporation method
KR101430657B1 (en) Atomic layer deposition system
KR102935307B1 (en) Raw material feeder and apparatus for processing substrate having the same
KR20130007343A (en) Linear nozzle for depositing a thin film and apparatus thereof
KR20210002607A (en) Evaporation source for vacuum evaporation equipment
JP7078462B2 (en) Thin-film deposition source for vacuum-film deposition equipment
JP6983096B2 (en) Thin-film deposition source for vacuum-film deposition equipment
JP7141793B2 (en) Evaporation source for vacuum deposition apparatus and vacuum deposition method
CN106480421B (en) Continuous film processing apparatus for erecting substrate
JP7303031B2 (en) Evaporation source for vacuum deposition equipment
KR102329250B1 (en) Deposition apparatus and deposition method using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211130

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220516

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220607

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220616

R150 Certificate of patent or registration of utility model

Ref document number: 7092543

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250