JP7094983B2 - CMP machine with improved throughput and process flexibility - Google Patents

Description

Incorporated by reference to any priority claim application This application claims priority under US Patent Provisional Application No. 62 / 602,538 filed April 26, 2017. This provisional application is incorporated herein by reference in its entirety.

Field The disclosed techniques are chemical mechanical flattening with operational capabilities that result in a reduction in semiconductor processing equipment, more specifically the installation area, and enable the handling and operation of objects in dense spaces. Planning (CMP) system and equipment.

CMP equipment is widely used in the semiconductor manufacturing industry.

There is a need for machines with substantially different architectures to enable solutions to specific needs in today's market. Machines of this type available today have reduced throughput due to limited wafer handling and multi-wafer machining options.

The object of the disclosed technique is to provide an improved chemical mechanical flattening (CMP) device with reduced footprint as well as improved throughput and functionality.

According to one embodiment, a substrate carrier head system is disclosed, wherein the substrate carrier head system is a support portion in which a rotation axis extends through the support portion, a first portion, and a first portion thereof. At least one elongated member comprising a second portion facing one portion, wherein the first portion is rotatably connected to the support portion and the elongated member is unidirectionally connected to the support portion. At least one elongated member configured to swivel around the axis of rotation over an angle of rotation of at least about 270 °, and configured to connect to the second portion to hold and process the substrate. Equipped with a carrier head.

According to one embodiment, the angle of rotation is substantially unlimited in one direction.

According to yet another aspect, the carrier head comprises a membrane configured to be pressurized so that the substrate can be platen-contacted with the polishing pad and machined by the polishing pad. ..

According to another aspect, from the first position on the carrier head, which allows the substrate to be carried out on the substrate in the first platen, to the substrate in the second platen. A control device configured to move to a second position that allows the second process to be carried out is disclosed.

According to yet another aspect, the first process and the second process are different.

According to another aspect, the first process is a bulk removal process and the second process is a fine removal process.

According to another embodiment, a substrate carrier head system is disclosed, wherein the substrate carrier head system is at least one support, at least one support in which the first rotation axis extends through the support. A first link having a portion, a first portion and a second portion facing the first portion, the first portion rotatably connected to the support portion and the first link being rotatably connected to the support portion. It is configured to swivel around the first rotation axis over the first rotation angle with respect to the portion, the second rotation axis extends through the second portion, and the first rotation axis and the second rotation axis. The axis of rotation is a first link that is substantially parallel to each other, and a second link that has a third portion and a fourth portion that faces the third portion, the third portion rotating to the second portion. With at least one elongated member comprising a second link that is possibly connected and configured to swivel the second link around the second axis of rotation over the second rotation angle with respect to the first link. A carrier head that is connected to the fourth portion and is configured to hold and process the substrate.

According to one embodiment, the first angle of rotation is at least about 270 ° in a single direction.

According to yet another aspect, the carrier head is configured to apply pressure to the substrate so that the substrate can be machined by the platen.

According to another aspect, the system is configured to move the carrier head linearly towards the center of the platen, at least in part based on the synchronous rotation of the first link and the second link. Has been done.

According to yet another aspect, the system further comprises at least one platen configured to machine the substrate held by the carrier head.

According to another aspect, the substrate carrier head system according to at least two embodiments is disclosed, in which each system comprises at least two elongated members and at least two carrier heads and each carrier head. It further comprises at least two platens configured to machine at least four substrates handled by, said first angle of rotation of at least about 270 ° in a single direction.

According to yet another aspect, a second platen is disclosed, wherein the at least one elongated member carries out a first process on the substrate at the first platen. It is configured to move from a first position that allows it to a second position that allows the second platen to carry out a second process on that substrate.

According to yet another embodiment, a chemical machine flattening device is disclosed, wherein the chemical machine flattening device is at least a first substrate carrier head system and a second substrate carrier head system, and each carrier head system has a different carrier head system. A support portion, the first portion of which is at least one elongated member comprising a support portion having a rotation axis extending through the support portion, a first portion, and a second portion facing the first portion. Is rotatably connected to the support and is configured to swivel the elongated member around the axis of rotation over a constant angle of rotation with respect to the support, as well as the first. At least a first substrate carrier head system and a second substrate carrier head system including a carrier head connected to two portions and configured to hold and process the substrate, and a first held by the first carrier head system. It comprises a substrate and at least one platen configured to machine a second substrate held by the second carrier head system.

According to one embodiment, the angle of rotation is at least about 270 ° in a single direction.

According to another aspect, the angle of rotation is substantially unlimited in one direction.

According to still another aspect, in the first carrier head system, the first substrate is placed on the first platen from the first position for carrying out the first process on the first platen, and the second platen is used. Disclosed is a control device configured to move two substrates to a second position for performing a second process.

According to another aspect, the first process and the second process are different.

According to yet another aspect, the control device configured to keep the first substrate carrier head system offline while the second substrate carrier head system remains in the machined state is disclosed.

According to another aspect, the control device is configured to cause the first carrier head system or the second carrier head system to replace the polishing pad of at least one platen.

The above features and advantages of the disclosed technique, as well as the features and advantages of the additional object, are the following exemplary and non-limiting details of the embodiments of the disclosed technique with reference to the accompanying drawings. Will be better understood through the explanation. In drawings, the same reference digits are used for the same element unless otherwise stated.

FIG. 1A is a plan view of a chemical mechanical flattening (CMP) system according to an embodiment of the disclosed technique. FIG. 1B is a side view of a CMP system according to an embodiment of the disclosed technique. FIG. 2 is a cross-sectional view of an exemplary carrier head assembly for a CMP system. FIG. 3A is a plan view of a CMP apparatus with a link according to an embodiment of the disclosed technique. FIG. 3B is a plan view of a CMP apparatus with a link according to an embodiment of the disclosed technique. FIG. 4 is a plan view of a platen-equipped CMP system according to an embodiment of the disclosed technique. FIG. 5 is an isometric view of an exemplary CMP system according to an embodiment of the disclosed technique. FIG. 6 is a flow chart illustrating an exemplary operating method of a CMP system according to an embodiment of the disclosed technique.

The disclosed technique relates to a CMP machine that results in a reduction in footprint compared to the footprint of a typical CMP machine, which reduces the footprint to allow the machine to handle and operate wafer objects in dense spaces. Brings the operational capabilities that make it possible. The disclosed technique also relates to a CMP machine equipped with a bendable arm with elbow joints and shoulders connected to a support. The disclosed technology single-polishs two or more wafers as part of a staggering (alternate) process so that the significant time for polishing the wafer is not interrupted or hindered by subsequent wafer polishing. It also relates to a CMP machine capable of polishing with a platen (polishing surface plate). The disclosed technology improves the preparation of offline consumables by providing a system in which the platen pads can be efficiently removed and replaced with pre-adjusted platen pads without causing machine downtime. Also related to. This is because the disclosed technique relates to utilizing other platens in the system.

There is a need for machines with substantially different architectures to enable solutions to specific needs in today's market. This type of machine available today, and the disadvantages of each of them, is the throughput due to the need to perform wafer handling and loading / unloading in sequence with the machining process. Machines that are degraded, machines that can only process one wafer per platen, wafer carriers (s) between all other polishing platens because they are fixedly connected to each other. One platen while the wafer carrier (s) is waiting for the machine, machining operation and / or wafer insertion / removal operation that requires moving at the same time as the head to be completed on the other head and / or platen. Machines that are not available, as well as machines that require the transfer of wafers from one wafer carrier to another in order to process the wafer between multiple platens.

The disclosed techniques will be described with respect to specific embodiments and with reference to specific drawings. The present disclosure is not limited to them, but only by the claims. The drawings provided are only schematic and are not intended to be limiting. In the drawings, for illustration purposes, the size of some of the elements may be exaggerated and not proportional to their actual size. Dimensions and relative dimensions do not necessarily correspond to the actual implementation of the present disclosure.

Among many similar applications, the adoption and use of chemical mechanical polishing (CMP) for thin film flattening in the manufacture of semiconductor ICs, MEMS devices and LEDs is all that makes "chips" for these types of devices. It is common among the companies of. This adoption includes the manufacture of chips for mobile phones, tablets and other mobile devices, as well as desktop and laptop computers. The growth of nanotechnology and microfabrication offers great promise for the endless use and adoption of digital devices in the medical, automotive and Internet of Things (“IoT”) fields. Chemical mechanical polishing for thin film flattening was devised and developed by IBM Corporation scientists and engineers in the early 1980s. Today, this process has spread around the world and is one of the true realization technologies in the manufacture of almost any digital device.

Integrated circuits are manufactured with multiple layers and alternating layers of conductor materials (copper, tungsten, aluminum, etc.), insulating layers (silicon dioxide, silicon nitride, etc.), and semiconducting materials (polysilicon). A continuous combination of these layers is sequentially provided on the wafer surface, but due to the embedded device on the surface, local undulations are formed in the device structure, as is the case with the silicon dioxide insulator layer. be. These unwanted local undulations need to be flattened or "flattened", after which the next layer can only be layered. In the case of copper layers, copper deposits on the surface to fill the contact vias and create effective longitudinal (depth) pathways for electron transfer from device to device and from layer to layer. Will be done. This procedure is continued for each layer provided (usually provided by the vapor deposition process). In the case of a multi-layer of conductor material (multi-layer of metal), this can result in numerous polishing procedures (once for each layer of conductor, insulator, and semiconductor material) to achieve the desired electrical circuit. be.

The CMP process is a realization technique in the manufacture of multi-layer electrical circuits that makes all this possible. CMP processes, systems and equipment.

Detailed embodiments of the disclosed technique will now be described with reference to the drawings.

FIG. 1A shows a chemical machine flattening provided with a support 102 (eg, body, column (shaft), base, polishing arm support, etc.), arm 104 (eg, elongated member or polishing arm), and carrier head 106. (CMP) It is a top view explaining the embodiment of the system 100. The arm 104 is attached to the support portion 102, and the carrier head 106 is attached to the arm 104. The CMP system 100 may also include means for rotating the arm attachment (not shown), as discussed further below. The support 102 is a structural support configured to hold the arm 104 and the carrier head 106 in place above one or more polished platens (shown in FIGS. 4 and 5). In addition, the support 102 is configured to rotate an arm 104 rotatably attached to the support 102. In some embodiments, the support 102 or a portion thereof may rotate such that the arm 104 attached to the support 102 rotates around the support 102. Alternatively, the arm 104 attached to the support 102 may be configured to rotate around the support 102 while the support 102 does not move. FIG. 1B is a side view of the CMP system 100.

In some embodiments, the support 102 is configured to provide electrical and fluid connections to the rest of the CMP system 100. Therefore, the support portion 102 may have an electrical / electromechanical connection portion and a fluid connection portion arranged inside the support portion 102 and / or along the outer circumference of the support portion 102. The electrical connection is configured to send power and electrical signals to one or more components of the CMP system 100 and receive electrical signals as feedback from the CMP system 100. For example, the CMP system 100 may have wiring that can be supplied through the bottom of the support 102 to various components of the CMP system 100, such as an Ethernet® connection and an electrical slip ring assembly. In addition, a fluid connection can be provided, which may be configured to provide various fluids to the CMP system 100 (eg, CMP slurry). This fluid connection can apply pneumatic and vacuum forces to the system.

In one embodiment, the CMP system 100 can be configured to rotate about a axis of rotation. Therefore, the support 102 provides means for rotating the arm 104 around a rotation axis. The support 102 may, for example, generate rotation on an electric motor (eg, stepping motor, brushless motor, torque motor, etc.), mechanical gear, magnetic coupler or rotary coupler or arm 104 or support 102. Other means may be provided.

In the example of FIG. 1A, the rotation axis passes through the support portion 102. The degree of rotation (°) is indicated by the symbol θ in FIG. 1A. However, the direction of rotation may be any direction (clockwise or counterclockwise). In addition, the arm 104 and carrier head 106 may rotate (ie, wind up or rewind) around an axis of rotation at least about 270 ° in a single direction (ie, angular displacement of 270 ° or more). In another embodiment, the rotation of the arm 104 around the axis of rotation may be continuous (ie, unlimited), so that the CMP system 100 has an angular displacement of 360 ° or more (ie, 2π radians or more). Can have.

In addition, the carrier head 106 attached to the arm can operate downward (ie, down) and up (ie, up). Therefore, the carrier head 106 can be lowered and can be raised based on the desired arrangement for CMP processing. For example, in an elevated arrangement, the carrier head 106 or arm 104 may receive a control signal instructing the carrier head 106 to descend. The carrier head 106 may be lowered until the carrier head 106 presses against a polishing pad on the platen (not shown). For example, the carrier head 106 may press the wafer held under the pedestal portion of the carrier head 106 against the polishing pad.

FIG. 2 is a cross-sectional view of the carrier head 106. The carrier head 106 may include a membrane assembly 205 and a support base 280 on which the membrane assembly 205 is mounted. The support base 280 can be any suitable construct configured to provide support for the membrane assembly. The support base 280 is capable of attaching and joining the rest of the carrier assembly 106 to the CMP system 100.

The membrane assembly 205 may include a support plate 210, an elastic membrane 220, a membrane clamp 230, and an outer pressure ring 240, as shown. The support plate 210 may be any suitable configuration for attaching the membrane assembly 205 to the support base 280. For example, the support plate 210 may be mounted on the support base 280 using one or more bolts or other suitable mounting elements. The support plate 210 may be placed on the support base 280 at various locations, for example, along the outer circumference of the support base 280.

The support plate 210 may be any suitable structure for supporting the elastic film 220. The elastic membrane 220 may be secured to the support plate 210 in several different ways. The elastic membrane 220 may be fixed to the support plate 210 before or after the support plate 210 is fixed to the support base 280. The elastic membrane 220 may be secured to the support plate 210 by the use of any of several suitable different retaining elements, for example the membrane clamp 230. In some embodiments, the membrane clamp 230 may be spring-loaded. In other embodiments, the membrane clamp 230 may be securely clamped by the use of fastening mechanisms (eg, nuts and bolts, etc.).

The elastic film 220 is fixed to the support plate 210 so that the film 220 can hold the wafer 270 in contact with the polishing pad and process the wafer, for example, as described above with reference to FIG. 1B. be able to. The terms "base" and "wafer" are used almost interchangeably herein and are disclosed, for example, in semiconductors or silicon wafers, flat panel displays, glass plates or discs, plastic workpieces, and herein. Includes various forms (eg, circles, squares, rectangles, etc.) and other substantially rigid, flat and thin workpieces of size that can carry out one or more embodiments of the device and process.

In combination with the polishing pad material and process parameters, the membrane 220 can be sufficiently elastic and flexible so that wafer breakage is reduced. The film 220 and the support plate 210 can be configured to allow gas pressure between the film 220 and the support plate 210 during CMP processing and press the film 220 against the wafer 270. For example, a substantial seal may be formed between the membrane 220 and the plate 210. The support plate 210 may be separated from the film 220 to form a gap or a cavity 260 between the support plate 210 and the film 220. The cavity 260 may be formed when the membrane 220 is in a stationary state (eg, non-pressurized state). In some embodiments, the membrane 220 rests on or is in close proximity to the plate 210 when the membrane 220 is in a resting state, and the membrane 220 is inflated (eg, pressurized). Occasionally a cavity 260 is formed. The cavities 260 can redistribute and even out changes in gas pressure to the membrane 220 and thus to the wafer 270 during flattening. As shown, gas pressure can be applied to the back surface side of the membrane 220 through the air channel 250. The air channel 250 may be disposed inside the support plate 210, or the gas may be supplied through other components. The air channel 250 may be modified differently depending on the application (for example, a circular tube, a square tube, etc.). In some embodiments, this air channel may provide a vacuum to keep the wafer 270 underneath the membrane assembly. The membrane 220 may be provided with holes to provide such a vacuum and / or to allow positive pressure to release the wafer 270 from the membrane 220.

In some embodiments, the cavity 260 may be formed by separating the membrane 220 from the support plate 210. For example, the support plate 210 may include a concave inner portion for forming a cavity. In the illustrated embodiment, the membrane assembly 205 can include an outer pressure ring 240 for forming the cavity 260. In other embodiments, the membrane assembly may be assembled without a pressure ring. For example, the film 220 may be directly supported (contacted) by the support plate 210 without the cavity 260 separating the film 220 from the support plate 210. In some embodiments, the membrane assembly may include one or more pressure rings 240 arranged concentrically.

In another embodiment, the membrane 220 used may be a multi-regional membrane. For example, the membrane 220 may have grooves (eg, recesses) and / or ridges in the membrane 220 that effectively separate various regions of the membrane 220. In unrestricted examples, the grooves may be arranged as a series of concentric circles emanating from the center of the membrane. In another example, the grooves and ridges are irregularly shaped (eg, interconnected circles (overlapping circles)) to improve the distribution of pressure across the wafer 370 when the wafer 370 is attached to the membrane assembly. , Non-circular recesses, circular patterns scattered over the surface of the membrane).

The membrane 220 may be flexible so that the membrane 220 fits into the structure surrounded by the membrane 220. In some examples, the film 220 may be convex. For example, the film 220 may have a loose center. The film 220 may even be pyramidal-like in shape so that a small area of the film 220 is in contact with the wafer surface for finer precision polishing.

The membrane material may be any elastic material suitable for flattening described herein and for use, for example, in a carrier head for a CMP process. In some embodiments, the membrane material may be one of rubber or synthetic rubber materials. This membrane material may be one of ethylene propylene diene monomer (M class) (EPDM) rubber or silicone. Alternatively, the membrane material may be vinyl, rubber, silicone rubber, synthetic rubber, nitrile, thermoplastic elastomer, fluoroelastomer, hydrated acrylonitrile butadiene rubber, or a combination of one or more of urethane and polyurethane foam.

One or more membrane assemblies may be implemented in one CMP system. The CMP system may have control utilizing feedback from the system during operation to more accurately control the CMP process (eg, variable speed motor control, etc.).

In some embodiments, the arm (s) of the CMP system described with reference to FIGS. 1A, 1B and 2 is such that the carrier head moves inward toward the support and / or away from the support. Can bend or rotate around a second axis of rotation so that it can swing outward (deploy). In some examples, this elongated arm may all have multiple links that may rotate around various axes of rotation (ie, an extensibility arm or an arm with joints).

3A and 3B show a plan view of a chemical mechanical flattening (CMP) system 300 embodiment comprising links 304 and 306. The CMP system 300 is substantially similar to the CMP system 100 described in FIGS. 1A-1B and 2. However, in the CMP system 300, the arm (s) can be bent or rotated about a second axis of rotation so that the carrier head 308 is inwardly directed towards the support as shown in FIG. 3B. Or, as shown in FIG. 3A, it differs in that it can swing outward away from the support in the opposite direction. For example, the CMP system 300 may include a first link 304 attached to the support 302, a second link 306 attached to the first link 304, and a carrier head 308 attached to the second link 306. In an unrestricted example, the links may be connected by a center joint (ie, elbow).

In some embodiments, the first link 304 is rotatably attached to the support 302 and defines a first rotation axis through the support 302. In addition, the first link 304 may be rotatably attached to the second link 306 to define a second axis of rotation through the attachment area between the links. Alternatively, the first link 304 may not be configured to rotate, in which case only the second link 306 is configured to rotate about a second axis of rotation. The mounting section comprises means for rotating the second link around a second axis of rotation, with features similar to those described with reference to FIGS. 1A-1B. Electrical and fluid connections can also be provided over the entire link, as described with reference to FIGS. 1A-1B.

Therefore, the link including the first link 304 and / or the second link 306 may be configured to rotate around its respective rotation axis (that is, the first rotation axis, the second rotation axis, etc.). .. For example, the second link 306 may be configured to rotate about a second axis of rotation through the link mounting section. In some embodiments, the second link 306 rotates about the second axis of rotation so that the second link 306 extends outward and creates a straight line with the other links and the first axis of rotation. It may be configured in. In other embodiments, the second link 306 may rotate around the second axis of rotation in the range of 0 ° to 180 °, 180 ° to 270 °, and 270 ° to 360 °. For example, the second link 306 may rotate around the second axis of rotation substantially indefinitely.

In some embodiments, the link may rotate independently of the other links in the link chain and independently of the support 302. In other embodiments, the particular links may be linked together such that their movement depends on the movement of another link or the movement of the support 302. For example, one or more links and a support 302 may be connected together by a rotary gear or a magnet so that when the support or another link rotates, the connected link or support also moves. ..

Further, the CMP system may include a plurality of supports having one or more arms attached to each support. For example, each support may have two arms. Furthermore, as discussed with reference to FIGS. 3A-3B, each arm may consist of links. In addition, a plurality of platens may be configured in close proximity to each support. For example, two platens may be placed between the two supports so that each carrier head of the two supports can approach each platen for CMP processing. In another example, one platen may be configured close to the two supports, in which case each carrier head is configured to be close to the platen for machining, as shown in FIG. Will be done.

In some embodiments, the wafer is presented at a predetermined insertion station (not shown) and is prepared for insertion into the carrier head 308. Wafer transfer from the Equipment Front End Module (EFEM) to the insertion / removal station is accomplished, for example, via an overhead gantry robotic mechanism.

The carrier head 308 is positioned concentrically with the insertion / removal station (not shown) and overhead thereof, and the wafer is transferred from that station to the carrier head 106. One of ordinary skill in the art will understand various methods and means for inserting a wafer into a carrier head and removing the wafer from the carrier head.

The carrier head 308 is positioned above the platen to carry out the polishing process, as shown. While the polishing process is in progress, the next wafer can be placed on an insertion / removal station (not shown) for subsequent processing. When the polishing process is complete, the links 304 and 306 supporting the carriers 308 and the elbows (ie, joints) between the links are capable of joint movement, resulting in the carrier head 308 (by progressing from FIG. 3A to FIG. 3B). Rotation around the support 302 of this carrier within a space limit smaller than possible if it is "stored" towards the support 302 (as shown) and otherwise not. Will be possible. Therefore, this allows the carrier head 308 to be positioned concentrically with and above the take-out station.

The carrier head 308 can then rotate back to a position for moving subsequent wafers from the insertion station to the carrier 308, and then the carrier 308 is positioned above the platen for machining. sell.

The processed wafers may then be removed to a take-out station and collected by a mobile robot for return to EFEM or, more generally, to the cleaning system.

To increase the system's throughput, this same process (sequence) is applied to the corresponding set of components symmetrically arranged across the platen and wafers are used with additional insertion and extraction stations. The carrier 308 can be platen machined while the carrier 308 is inserted into or removed from the second carrier head.

FIG. 4 is an exemplary embodiment of a CMP system 400 with a platen 414 that is similar to the previously described CMP systems 300 and 100 and is configured to machine a substrate held by each of the carrier heads 410 and 412. The form will be described. In some embodiments, the arms 406 and 408 are substantially similar to the arm 104. Alternatively, the arms 406 and 408 may include links such as links 304 and 306 described with reference to FIGS. 3A-3B. In addition, the carrier heads 410 and 412 may be substantially similar to the carrier heads 106 or 308, and the supports 404 and 402 may be substantially similar to the supports 102 or 302. In a particular example, the platen 414 can be configured in any number of shapes (eg, circles, squares, etc.) and will therefore have a center. In the example of FIG. 4, the platen 414 is a circle having a center 416. In addition, the CMP system 400 can be configured with any number of platens, in which case, for example, each platen or pair of adjacent platens has several corresponding supports.

In addition, each of the arms 406 and 408 can rotate around its respective axis of rotation through each of the supports 402 and 404. Further, each arm may be configured to rotate around its own axis of rotation with an angular displacement of 270 ° or more. In some examples, the arms 406 and / or 402 may be configured to rotate substantially unlimitedly around their respective axes of rotation.

In some embodiments, the CMP system 400 may include one or more stations for inserting one wafer object into one or more carrier heads and / or removing a wafer object from one or more carrier heads. .. For example, each carrier head may have a dedicated insertion station and / or removal station for inserting and / or inserting the wafer onto the carrier head and removing the wafer from the carrier head. The two or more carrier heads may have a common insertion / removal station for each other for machining on the same or different platens. In addition, each station may be located approximately the same radial distance from each of the supports 404 and 402. Alternatively, each station may be located at different radial distances from each of the supports 404 and 402. Each station may be located at the same or different radial distances from the support with respect to the other station (s). Thus, in embodiments where one or more arms of FIG. 4 include links, the arms have greater flexibility in different configurations and locations of different supports and in different configurations of the different stations. You may move the joints to reach the object.

Therefore, a plurality of wafers may be processed with a common platen. This may be desirable in certain applications for increasing throughput over machining one wafer with one platen. In an example not intended to be limited, two or more wafers may be inserted into the carrier heads 410 and 412. Insertion may be done at an insertion station (not shown). In addition, in some examples there may be a take-out station that has a configuration separate from the insert station. Both carrier heads 410 and 412 may be positioned above the platen 414 (as shown) such that both wafers may be machined substantially simultaneously. Once the machining of both wafers is complete, the carrier is positioned above a suitable station (not shown) for retrieval and then for inserting additional wafers into the carriers 410 and 412 for subsequent machining. Positioned above a suitable insertion station (not shown). Alternatively, the carrier head may alternately process or alternate (replace) the respective wafers. For example, the carrier head 410 may process the first wafer on platen 414 for a specific time or for a specific percentage of the entire process. On the other hand, the carrier head 412 is raised so that the carrier head 412 does not press the platen 412 until the carrier head 412 receives a control signal for lowering the head and processing the second wafer in contact with the platen 412. It may be configured at the specified position. When the carrier head 412 receives a control signal for lowering its head, the carrier head 410 can receive a control signal for raising the head of the carrier head 410 so that the first wafer is no longer machined. .. Alternatively, the carrier head 410 may be left down so that both carrier heads are processed simultaneously.

In addition, the CMP systems described with respect to FIGS. 1A-1B, 2, 3 or 4 may be implemented in several different combinations, for example as shown in FIG. For example, FIG. 5 illustrates a CMP apparatus 500 comprising a first CMP system 520 and a second CMP system 530. In this indicated embodiment, each CMP system comprises two arms with links and two platens. Therefore, each platen is configured to process one or more wafers from each of the CMP systems.

In the exemplary embodiment of FIG. 5, the CMP systems 520 and 530 have two arms with links. Although the CMP systems 520 and 530 of FIG. 5 show arms with links, the system does not have one or more of the arms as described with reference to FIGS. 1 and 4. It should be understood that it can be configured as such. In addition, the CMP systems 520 and 530 can have any number of arms extending from their respective supports. Furthermore, the CMP device 500 can have any number of platens. In some embodiments, the two arms attached to one support rotate around a common axis of rotation in the same direction as each other, substantially simultaneously, so that they reposition each other. be able to.

In addition, the CMP systems 520 and 530 may include a controller 510 as shown. Alternatively, the control device 510 may be placed inside the CMP system (eg, inside the support of the CMP system 520 and / or 530). In addition, the control device 510 can be an electronic control device, mechanical, pneumatic or combination. In addition, any of the devices and systems described herein can be configured to provide functionality and additional functionality in the methods described herein (eg, control devices). 510, FIG. 5) can be provided. In addition, any of the devices and systems described herein can be equipped with a device (eg, an absolute encoder, etc.) for tracing (monitoring) the directional and angular displacement of the CMP carrier head. In addition, any of the devices and systems described herein can include a platen with a polishing pad that is configured to rotate or spin (high speed rotation). Furthermore, in addition, any of the devices and systems described herein can include carrier heads that are configured to rotate or spin. For example, the carrier head holding the wafer may spin the wafer while it is in contact with the spinning platen to process the wafer.

In addition, the wafer carrier described above is attached to the outer portion of the outer link (or arm if there is no link), which exerts pressure on the wafer being machined. The wafer carrier head can descend towards the platen and can also rise away from the platen, depending on the desired operation. The wafer carrier is also configured to support wafer insertion and removal operations before and after CMP processing. The carrier head is also configured to move linearly (or radially if the platen is circular) towards the center of the platen (as described above for center 416) due to the synchronous rotational motion of both links. Has been done. For example, the carrier head can squeeze the wafer into one area of the platen. In that case, the controller may instruct both links to rotate in synchronous motion so that the wafer moves towards the center of the platen. Further, the carrier head is further configured to vibrate inwardly and outwardly along a line or radius.

In addition, each platen may be equipped with a pad adjuster system (shown but unnumbered). The pad adjuster can be swept over the entire polishing platen or a portion thereof. The pad adjuster can be configured to adjust (arrange) the pad before, during, and / or after polishing the wafer.

In another embodiment, the CMP controller controls one of the carrier head systems to replace the polishing pad (eg, consumable) of the first platen in a system having at least two CMP carrier head systems. It may be further configured as follows. In such an embodiment, the second carrier head system may continue to process the wafer on the second platen while the first platen is temporarily offline. For example, the polishing pad may be prepared or pre-adjusted offline (ie, away from the CMP processing station). The control device may place the first carrier head system in an offline state (eg, in maintenance mode or repair mode, where the first carrier head has not machined the wafer). The second carrier head system may continue to be machined. Therefore, the controller may instruct the first carrier head system to attach a pre-adjusted polishing pad to the system. In some embodiments, this attachment will require the carrier head to be removed so that the pre-adjusted polishing pad can be attached in its proper position. In other embodiments, the separate attachment may need to be incorporated in place of the carrier head so that the pre-adjusted polishing pad can be attached to the separate attachment.

In some embodiments, the CMP system 500 may be configured to favorably misplace (swap) the machining of a plurality of wafers on a plurality of platens. For example, the CMP system may include a first carrier head system and a second carrier head system, each system having a first arm and a second arm. In addition, each arm has a carrier head attached to one end.

The first carrier head system may process the first wafer on the first platen using the first arm while the second carrier head system processes the second wafer on the second platen using the second arm. .. When the first wafer is machined for a given time or a given percentage of the total machining (eg, 80% machined), the first arm rotates and the first wafer is turned into a second platen for the second CMP process. You can move to. In some embodiments, the first and second CMP processes are different. For example, the first process may be a bulk (rough) removal process, whereas the second process may be a micro-removal process, the bulk removal process being more from the wafer than the micro-removal process. Remove the material. For example, in some embodiments, the bulk removal process removes 80% of the total material removed from the wafer for the entire process and the fine removal process removes 20%. In addition, the second wafer may continue to be machined on the second platen. On the other hand, a third wafer is inserted using the second arm of the first carrier head system, and when the first wafer is removed, it is machined on the first platen, and the process itself is for subsequent wafer machining. It may be repeated.

FIG. 6 is a flow diagram illustrating an exemplary method 600 for operating a CMP system according to a particular embodiment disclosed herein. In some embodiments, the method 600 may be carried out by the system 100 of FIGS. 1A-1B. In some embodiments, method 600 may be carried out by system 300 of FIGS. 3A-3B. In some embodiments, method 600 may be performed by system 400 of FIG. In some embodiments, method 600 may be implemented by system 500 of FIG. 5, or other systems.

At block 610, a CMP system is prepared to process the wafer. This CMP system comprises an elongated arm rotatably attached to a support. At block 620, the arm is rotated from the first position to the second position. This rotation from the first position to the second position results in an angular displacement of more than 270 °.

Thus, the present disclosure allows for simultaneous machining of one wafer during sequential insertion and removal of wafers so that both wafers are sequentially machined on the same platen and one wafer on one platen. Provides high throughput for processing. In addition, the present disclosure allows both wafers to be machined on the same platen and two wafers on one platen by allowing the two wafers to be machined simultaneously during the sequential insertion and removal of the wafers. Brings high throughput for. In addition, the disclosed techniques are configured to provide approximately 100% duty cycle for the entire system. For example, the system may experience little to no pause in machining wafers as a result of the configurations and embodiments described herein. Furthermore, the disclosed techniques are configured to result in a reduction in footprint for each CMP system (ie, support and arm (s)) and overall for the entire system.

Many changes and modifications may be made to the above embodiments, and those elements should be understood to be within the scope of some acceptable examples. All such modifications and modifications are intended to be included within the scope of the present disclosure in the present invention. The above description describes in detail a particular embodiment. However, no matter how detailed the above description may appear in the wording, it will be appreciated that the system and method can be implemented in many ways and implemented in other forms. As previously described, the use of a particular terminology when describing a particular feature or aspect of the system or method is that the terminology is any of the features or aspects of the system or method to which the terminology is associated. It should be noted that the limitation to include such particular features is not construed as implying that it is redefined herein.

Conditional phrases, especially "can (... can, ... may)", "could (... can, ... may)", "might (... may, ... may)" or "may () ... May, ... May be) ", etc., unless otherwise stated or understood to be inconsistent in the context in which they are used, a particular embodiment may contain a particular feature, element and / or process. It is generally intended to convey that it does not include other embodiments, whereas it does. Thus, such conditional terms are that features, elements and / or steps are somehow required for one or more embodiments, or that one or more embodiments are user-entered or instructed. Whether or not it is generally implied that these features, elements and / or steps always include logic to determine whether or not they should be included or implemented in any particular embodiment. Not intended.

Contextual terms such as the phrase "at least one of X, Y and Z" or "at least one of X, Y or Z" have items, terms and the like X, Y unless otherwise stated. Or it should be understood in the context commonly used to convey that either Z, or a combination thereof, may be used. For example, when the term "or or" is used, for example, to connect elements of a list, the term "or or" refers to one, some, or all of the elements in the list. As it means, it is used in its inclusive sense (and not in its exclusive sense). Thus, such a connecting phrase implies that a particular embodiment requires that at least one of X, at least one of Y, and at least one of Z be present, respectively. That is not generally intended.

Furthermore, the terms in the specification and claims, first, second, third, etc., are used to distinguish similar elements and are not necessarily used to describe order or chronological order. Not that. The terms are interchangeable under appropriate circumstances and embodiments of the present disclosure may function in a different order than those described or described herein.

Further, the terms in the specification and claims, top, bottom, above, under, etc. are used for explanatory purposes and do not necessarily describe relative positions. Not used for. The terms so used are interchangeable under appropriate circumstances and the embodiments of the disclosure described herein are oriented differently than those described or described herein. Can function.

The term "a", as used herein, should be given an inclusive interpretation rather than an exclusionary one. For example, unless otherwise stated, the term "a" should not be understood to mean "exactly one" or "one and only one". Instead, the term "a", whether used in a claim or elsewhere in the specification, and "at least one" in the claim or elsewhere in the specification. , "One or more" or "at least one", regardless of the use of limiting terms such as "one or more" or "plurality of".

The term "comprising", as used herein, should be given an inclusive interpretation rather than an exclusionary one. For example, a general purpose computer with one or more processors should not be construed as excluding other computer components, and in some cases even with components such as memory, input / output devices and / or network interfaces. good.

The above detailed description shows, describes, and points out novel features that apply to the various embodiments, but without departing from the spirit of the present disclosure, various aspects and details of the described device or process. It may be understood that omissions, replacements and changes may be made. As will be appreciated, certain embodiments of the disclosed techniques described herein are embodied to the extent that they do not provide all of the features and benefits set forth herein. You may. This is because some features may be used or implemented separately from others. The scope of a particular aspect of the technique disclosed herein is set forth by the appended claims rather than by the specification above. All changes contained in the meaning and scope of the claims will be included in the scope of the claims.

100 Chemical Mechanical Flattening (CMP) System 102 Support 104 Arm 106 Carrier Head 205 Film Assembly 210 Support Plate 220 Elastic Film 230 Film Clamp 240 Outer Pressure Ring 250 Air Channel 260 Cavity 270 Wafer 280 Support Base 300 Chemical Mechanical Flattening (CMP) ) System 302 Support 304 1st link 306 2nd link 308 Carrier head 400 CMP system 402, 404 Support 406, 408 Arm 410, 412 Carrier head 414 Platen 416 Center 500 CMP device 510 Control device 520 1st CMP system 530 2nd CMP system

Claims (20)

The support part, the support part where the rotation axis extends through this support part,
An elongated member comprising a first portion and a second portion facing the first portion, wherein the first portion is rotatably connected to the support portion and the elongated member is attached to the support portion. With respect to at least one elongated member configured to swivel around the axis of rotation over a rotation angle of at least about 270 ° in a single direction.
A substrate carrier head system comprising a carrier head connected to the second portion and configured to hold and process the substrate. The system of claim 1, wherein the angle of rotation is substantially unlimited in one direction. Claim 1 or claim 2 comprises a film configured such that the carrier head is pressurized so that the substrate is platen in contact with the polishing pad and can be machined by the polishing pad. The described system. Performing the second process on the substrate with the second platen from the first position on the carrier head, which allows the substrate to be carried out on the substrate with the first platen. The system according to any one of claims 1 to 3, further comprising a control device configured to move to a second position that enables. The system according to claim 4, wherein the first process and the second process are different. The system according to claim 5, wherein the first process is a bulk removal process and the second process is a fine removal process. At least one support portion, and at least one support portion having a first rotation axis extending through the support portion.
A first link having a first portion and a second portion facing the first portion, wherein the first portion is rotatably connected to the support portion and the first link is rotatably connected to the support portion. It is configured to rotate around the first rotation axis over the first rotation angle, the second rotation axis extends through the second portion, and the first rotation axis and the second rotation axis. Is a second link having a first link that is substantially parallel to each other and a third portion and a fourth portion that faces the third portion, wherein the third portion is rotatable to the second portion. With at least one elongated member comprising a second link that is connected and configured to swivel the second link around the second axis of rotation over the second angle of rotation with respect to the first link.
A substrate carrier head system comprising a carrier head connected to the fourth portion and configured to hold and process the substrate. The system of claim 7, wherein the first angle of rotation is at least about 270 ° in a single direction. The system according to claim 7 or 8, wherein the carrier head applies pressure to the substrate so that the substrate can be machined by a platen. 7. According to claim 7 or 8, the carrier head is configured to move linearly toward the center of the platen, at least in part based on the synchronous rotation of the first link and the second link. The system described. A chemical mechanical flattening apparatus comprising the system according to any one of claims 7 to 10, further comprising at least one platen configured to process the substrate held by the carrier head. The system according to any one of claims 7 to 11 is provided, and each system comprises.
With at least two elongated members and at least two carrier heads,
Further equipped with at least two platens configured to machine at least four substrates handled by each carrier head.
The first rotation angle is at least about 270 ° in a single direction for a chemical mechanical flattening device. The second platen from a first position further comprising a second platen, wherein the at least one elongated member allows the substrate to carry out the first process on the substrate at the first platen. 11. The apparatus of claim 11, which is configured to move to a second position that allows the substrate to carry out a second process. At least the first substrate carrier head system and the second substrate carrier head system, and each carrier head system is
A support part, a support part in which the axis of rotation extends through this support part,
An elongated member comprising a first portion and a second portion facing the first portion, wherein the first portion is rotatably connected to the support portion and the elongated member is rotatably connected to the support portion. At least one elongated member configured to swivel around the axis of rotation over a constant angle of rotation, as well as a carrier head connected to the second portion to hold and process the substrate. At least a first board carrier head system and a second board carrier head system,
A chemical mechanical flattening apparatus comprising a first substrate held by the first carrier head system and at least one platen configured to process a second substrate held by the second carrier head system. 15. The apparatus of claim 14, wherein the angle of rotation is at least about 270 ° in a single direction. 15. The apparatus of claim 14, wherein the angle of rotation is substantially unlimited in one direction. In the first carrier head system, the first substrate is placed on the first platen from the first position for carrying out the first process on the first substrate, and the second platen is attached to the second process on the second substrate. The device according to any one of claims 14 to 16, further comprising a control device configured to move to a second position for carrying out. The device according to claim 17, wherein the first process and the second process are different. 17. The device described. 17. The device of claim 17 or 19, wherein the control device is configured to cause the first carrier head system or the second carrier head system to replace the polishing pad of at least one platen.

Images