JP7096551B2 - Static eliminator - Google Patents

Description

The present invention relates to a static eliminator that uses plasma to eliminate static electricity in a space that maintains a high vacuum.

Conventionally, a processing process for forming a film to be processed under high vacuum has been known. In such a treatment process, the higher the degree of vacuum, the lower the boiling point of the metal, and the evaporated metal does not chemically react with the excess gas in the atmosphere. It can be carried out. Under these circumstances, in recent years, due to the demand for high precision in processing processes such as film formation processing, processing in a high vacuum atmosphere with a higher vacuum degree than 0.1 Pa has been required. There is.

However, when a film is used as the object to be processed, for example, the film is unwound from one roll and film-formed in the vacuum chamber, and after this film-forming treatment, the film is wound on the other roll. When the film is unwound, it is triboelectrically charged between the films, or it comes into contact with a guide roller and is triboelectrically charged.
If the film formation process is performed while the film is charged as described above, uniform film formation may not be possible or wrinkles may occur on the surface of the film.

When static elimination treatment is performed using plasma to remove static electricity from the film, gas is supplied to the electric field to generate plasma, and the conductivity of this plasma is used to form the object to be treated. The grounded portion is made conductive via plasma, and the electric charge of the object to be processed is eliminated.

Japanese Unexamined Patent Publication No. 10-298758

In a processing process such as film formation, the inside of the vacuum chamber must be maintained at a high vacuum as described above.
Further, in order to remove static electricity from an object to be treated by using plasma, a gas for plasma generation is required, and this gas must be supplied to a vacuum chamber under high vacuum.

However, even if a gas is supplied into a vacuum chamber maintained in a high vacuum, the gas may diffuse instantly and may not lead to plasma generation.
Therefore, it is conceivable to increase the gas supply amount, but if the gas supply amount is increased, the high vacuum in the vacuum chamber is impaired by that amount, and the desired processing process cannot be executed.

As described above, when a processing process such as a film forming process and a static elimination process using plasma are performed in the same vacuum chamber maintained in a high vacuum, both processes are in a trade-off relationship.
Therefore, conventionally, it has been considered impossible to simultaneously or continuously execute another process and the static elimination treatment using plasma in the same vacuum chamber maintained in a high vacuum.

An object of the present invention is to enable static elimination processing using plasma without reducing the degree of vacuum in a high vacuum chamber, so that processes such as film formation treatment and static elimination treatment can be performed in the same high vacuum chamber. It is to provide a static elimination device.

In the first invention, a plasma generation chamber is provided which is partitioned from a high vacuum chamber provided with a grounding portion while maintaining a high vacuum , and the plasma generation chamber has a relatively smaller volume than the high vacuum chamber. In the plasma generation chamber formed , a communication portion for communicating the plasma generation chamber with the high vacuum chamber, a first electrode and a second electrode for forming an electric field facing each other, and a gas supply amount can be set. A gas supply means is provided , a window hole is formed in the high vacuum chamber, and a lid member having an outer diameter larger than the window hole is provided. The lid member closes the window hole from the atmosphere side. In this lid member, a through hole is formed through the window hole from the atmosphere side toward the inside of the high vacuum chamber, and the outer diameter is larger than the inner diameter of the through hole. However, while the through hole is closed from the atmosphere side and fixed to the lid member, the second electrode facing the first electrode is provided on the high vacuum chamber side through the through hole, and the first electrode is provided. The space between the surface and the facing portion of the second electrode is the plasma generation chamber partitioned from the high vacuum chamber.
Then, in the plasma generation chamber, plasma is generated by the gas supplied in the electric charge between the first electrode and the second electrode, and the generated plasma is passed through the communication portion to the high vacuum chamber. At the same time, the object to be processed in the high vacuum chamber and the ground contact portion are electrically connected to each other through the plasma guided to the high vacuum chamber, and the electric charge of the object to be processed is eliminated.

Further, the high vacuum in the present invention means a degree of vacuum in which plasma cannot be generated unless gas is positively supplied. Actually, the vacuum degree is higher than 0.1Pa, but in a strict sense, it is not the perfect vacuum degree of 0.1Pa, and even if the value deviates slightly back and forth, gas must be actively supplied. For example, if the degree of vacuum is such that plasma cannot be generated, it is included in the high vacuum of the present invention.

If the high vacuum chamber is grounded, the inner surface of the high vacuum chamber functions as the grounding portion.
Further, the smaller the volume of the plasma generation chamber is, the smaller the amount of gas can be, but if the plasma generation chamber is too small, sufficient plasma required for static elimination cannot be generated. Therefore, the volume of the plasma generation chamber is determined according to the required plasma density.

In the first invention, as described above, the window hole is closed by the lid member from the atmosphere side, and the through hole is also closed by the first electrode from the atmosphere side, so that the differential pressure between the atmospheric pressure and the pressure in the high vacuum chamber is different. Acts on each of the lid member and the first electrode in a direction that always closes the window hole and the through hole.
In the first invention, a second electrode may be provided in the opening portion of the through hole on the high vacuum chamber side, and the through hole portion may be used as a plasma generation chamber, or a ring member may be provided in the opening portion. The through hole and the ring member may be combined to form a plasma generation chamber.

In the second invention, a plasma generation chamber is provided which is partitioned from a high vacuum chamber provided with a grounding portion while maintaining a high vacuum, and the plasma generation chamber has a relatively smaller volume than the high vacuum chamber. In the plasma generation chamber formed, a communication portion for communicating the plasma generation chamber with the high vacuum chamber, a first electrode and a second electrode for forming an electric charge facing each other, and a gas supply amount can be set. A gas supply means and a power source for applying a vacuum to the second electrode are provided, and between the second electrode and the power source, a capacitor connected in parallel with the power source, and the power source and the capacitor are provided. A resistance is provided between the capacitor and the second electrode, respectively, and a vacuum is generated by the gas supplied in the electric charge between the first electrode and the second electrode, and this is generated. The generated plasma is guided to the high vacuum chamber via the communication portion, and the object to be processed in the high vacuum chamber and the ground contact portion are electrically connected to each other via the plasma guided to the high vacuum chamber. The electric charge of the object to be processed is evacuated.

The third invention is characterized in that the second electrode is formed of a plate-shaped porous electrode, and the porous electrode is provided in the communication portion. Therefore, the plasma generated in the plasma generation chamber is guided to the high vacuum chamber through this porous electrode.

In the fourth invention, a positive voltage is applied to the porous electrode.
In the fifth invention, a negative voltage is applied to the porous electrode.
As a means for applying a positive or negative voltage as described above, a DC power supply is in principle, but an AC power supply may be used to adjust the alternating voltage to the DC voltage.

The sixth invention is characterized in that the gas is intermittently supplied from the gas supply means in a state where a voltage is applied to the second electrode.

According to the first and second inventions, since the volume of the plasma generation chamber is small, the gas concentration in the generation chamber can be maintained. Moreover, since the gas supply amount of the gas supply means can be set, an appropriate gas amount can be supplied according to the volume of the plasma generation chamber, the degree of vacuum of the high vacuum chamber, and the like. By that amount, the gas is efficiently converted into plasma.

The object to be processed in the high vacuum chamber and the grounding portion are made conductive via the plasma generated as described above, and the object to be processed is statically eliminated. Moreover, since this plasma is generated with a small amount of gas, it plays a role as a conductor for electric discharge and is exhausted instantly.

In this way, the static elimination process and the exhaust are performed almost simultaneously and instantaneously, so that the static elimination process can be performed without damaging the high vacuum of the high vacuum chamber, and the processing process such as the film formation process and the static elimination process are in a trade-off relationship. Even if they are, they can be compatible.

In particular, according to the first invention, the differential pressure between the atmospheric pressure and the inside of the high vacuum chamber acts as a force in the direction of closing the window hole and the through hole, so that the metal sealing function by the lid member and the first electrode is exhibited. At the same time, the lid member and the first electrode also exert a function of pressing the seal member. Since such a function is exhibited, the high vacuum chamber is almost completely airtight, and the high vacuum in the high vacuum chamber can be maintained.
In addition, the bolts for attaching the lid member to the high vacuum chamber and the bolts for attaching the first electrode to the lid member need only have the function of fixing the lid member and the first electrode. It also helps to reduce the size of the ingredients.
Further, according to the second invention, by utilizing the power storage function of the capacitor, a large current can be instantaneously and stably flowed even if the power supply does not have a high output.

According to the third invention, since the second electrode is composed of a plate-shaped porous electrode and the porous electrode is provided in the communication portion of the plasma generation chamber, the plasma generated in the plasma generation chamber is the porous electrode. It is guided to the high vacuum chamber through the hole of.

According to the fourth invention, since a positive voltage is applied to the second electrode, which is a porous electrode, electrons passing through the porous electrode without colliding with gas molecules in the plasma generation chamber momentarily enter the high vacuum chamber. Even if it enters, the electron is pulled back to the second electrode side by the attractive force between the positive electrode and the second electrode. Since the electrons having a locus of being pulled back while passing through the porous electrode have a long moving distance, the chances of the electrons colliding with the gas molecule increase. The more chances of collision between the electrons and gas molecules, the more efficiently plasma is generated.

According to the fifth invention, since a negative voltage is applied to the second electrode, which is a porous electrode, all the electrons from the second electrode are completely transferred to the plasma generation chamber due to the action of their repulsive force. Be trapped. Therefore, the plasma generation efficiency in the plasma generation chamber can be increased.

According to the sixth invention, since plasma is generated triggered by the supply of gas for plasma generation, it is not necessary to synchronize the voltage application timing and the gas supply timing, and the device is controlled accordingly. The mechanism becomes simple. Further, since the gas is intermittently supplied, it is possible to continuously process the film to be conveyed without lowering the degree of vacuum in the high vacuum chamber.

It is a schematic diagram which showed the structure in the high vacuum chamber in 1st Embodiment. It is a schematic diagram which showed the structure which forms the plasma generation chamber of 1st Embodiment. It is a schematic diagram which showed the structure which forms the plasma generation chamber of 2nd Embodiment. It is a schematic diagram which showed the structure which forms the plasma generation chamber of 3rd Embodiment. It is a schematic diagram which showed the structure which forms the plasma generation chamber of 4th Embodiment.

1 to 2 show a first embodiment of the present invention.
In the static eliminator of the first embodiment, as shown in FIG. 1, the high vacuum chamber 1 that maintains the ground potential is kept in a high vacuum by the vacuum pump P, but the high vacuum in this embodiment is 0.1 Pa. A state in which the degree of vacuum is higher than that. The high vacuum chamber 1 described in this way includes a transport means for transporting the object to be processed, a film forming treatment mechanism 2 for forming a thin film on the object to be processed, and the film forming processing mechanism 2 for the moving direction of the object to be processed. It is equipped with a static elimination processing mechanism that eliminates static electricity on the object to be processed on the upstream side of the.

The transport means comprises a pair of rolls 3 and 4 and a drum 5 provided between the pair of rolls 3 and 4, and the film F unwound from one of the rolls 3 is a drum 5. It is taken up by the other roll 4 via. The roll 4 is rotated by a power source such as a motor (not shown), and the film F is unwound from one roll 3 and wound by the other roll 4. The axial lengths of the rolls 3 and 4 and the drum 5 are kept longer than the width of the film F.

Further, the film F uses an insulating material made of resin. Therefore, when it is unwound, it is charged by the peeling friction between the films F.
Further, the film forming processing mechanism 2 and the static elimination processing mechanism are provided between the pair of rolls 3 and 4.
The film forming processing mechanism 2 is for evaporating a metal such as aluminum to form a thin film on the surface of the film F.

The static elimination processing mechanism has the following configuration.
As shown in FIG. 2, the window hole 1a formed in the high vacuum chamber 1 is closed by the lid member 6.
The lid member 6 is provided with a cylindrical main body portion 6a whose outer diameter substantially corresponds to the opening diameter of the window hole 1a, a flange 6b is provided around the opening, and a bottom portion 6c is provided on the opposite side of the flange 6b. It is provided.

The outer diameter of the flange 6b is larger than the inner diameter of the window hole 1a, and when the main body portion 6a is inserted into the window hole 1a from the atmosphere side, the flange 6b is in close contact with the high vacuum chamber 1 around the window hole 1a. The window hole 1a is closed.
The flange 6b of the lid member 6 as described above is fixed to the high vacuum chamber 1 with a plurality of bolts k1, and the seal member s1 is incorporated on the inner diameter side of the bolts k1.

Further, in the bottom portion 6c of the lid member 6, a through hole 6d penetrated from the atmosphere side toward the inside of the high vacuum chamber 1 is formed in a state where the window hole 1a is closed, and the through hole 6d penetrates the lid member 6. The hole 6d is closed on the atmospheric side by a plate-shaped first electrode 7. That is, the outer diameter of the first electrode 7 is made larger than the opening on the atmospheric side of the through hole 6d, and the first electrode 7 covers and closes the atmospheric side of the through hole 6d. The first electrode 7 in this way is fixed by the bolt k2 from the atmosphere side. The seal member s2 is incorporated on the inner diameter side of the bolt k2.

As described above, each of the window hole 1a and the through hole 6d is closed from the atmosphere side by the lid member 6 and the first electrode 7, so that the higher the vacuum inside the high vacuum chamber 1, the larger the differential pressure becomes. It acts on the member 6 and the first electrode 7, and exerts a force in the direction of closing the window hole 1a and the through hole 6d.
Therefore, the metal sealing function of the lid member 6 and the first electrode 7 and the sealing function of the sealing members s1 and s2 are combined, and the high vacuum chamber 1 is kept almost completely airtight.

On the other hand, a ring member 8 made of an insulator is fixed by a bolt k3 around the opening on the opposite side of the through hole 6d on the atmosphere side, and the opening of the ring member 8 is covered with the second electrode 9. It is provided so that it can be used. The second electrode 9 constitutes a plate-shaped porous electrode and is made of a mesh.
The space between the facing portions of the first electrode 7 and the second electrode 9 is the plasma generation chamber A partitioned from the high vacuum chamber 1.

In this first embodiment, the second electrode 9 made of a mesh also serves as the communication portion 10.
In the first embodiment, the ring member 8 is provided in the opening portion, and the through hole 6d and the ring member 8 are combined to form the plasma generation chamber A, but the bottom portion of the lid member 6 is formed. If the thickness of 6c can be increased, the second electrode 9 can be provided in the opening portion of the through hole 6d on the high vacuum chamber 1 side, and only the through hole 6d portion can be used as the plasma generation chamber A.

A high-voltage DC power supply 11 is connected to the second electrode 9 as described above, and a positive voltage is applied.
Further, the lid member 6 is made of a metal that is a conductor, and the lid member 6 conducts with the first electrode 7 and also with the high vacuum chamber 1. Therefore, the lid member 6 and the first electrode 7 have the same ground potential as the high vacuum chamber 1.

Since the lid member 6 is grounded, the inner peripheral surface of the through hole 6d has a potential difference with the second electrode 9, and functions as an electrode with respect to the second electrode 9. Since the inner peripheral surface of the through hole 6d functions as an electrode with respect to the second electrode 9, the surface area of the first electrode 7 is substantially expanded by the amount of the inner peripheral surface of the through hole 6d. If the surface area of the first electrode 7 is increased, discharge is more likely to occur and more plasma is generated.

Further, in the connection process between the second electrode 9 and the power supply 11, a capacitor C in parallel with the power supply 11 is connected to the second electrode 9. The capacitor C is provided in order to exert a storage function and allow a current to flow stably to the second electrode 9.
Further, the resistor R1 provided between the capacitor C and the power supply 11 protects the power supply 11, and the resistance R2 provided between the capacitor C and the second electrode 9 is excessive to the second electrode 9. It prevents current from flowing.

Further, reference numeral 12 in the figure is a gas supply hole formed in the first electrode 7, and is connected to the gas supply source G via a valve 13. Therefore, the gas from the gas supply source G is supplied to the plasma generation chamber A via the valve 13 and the gas supply hole 12.
The gas supply hole 12 is provided with a space by forming a recess 12a on the plasma generation chamber A side of the first electrode 7. By providing the space in this way, the gas can be easily spread in the plasma generation chamber A, and the surface area of the second electrode 9 and the electrode forming the electric field is increased by the recess 12a.

The valve 13 is controlled by the valve control unit 14 so as to open and close intermittently, and the valve control unit 14 enables the gas supply amount per unit time and one opening time to be set in advance. ing.
The gas supply source G, the valve 13, and the valve control unit 14 are combined to form the gas supply means M of the present invention.

The plasma generation chamber A partitioned from the high vacuum chamber 1 as described above is provided with the communication portion 10 facing and close to the film processing surface in the high vacuum chamber 1.
Further, a grounding portion is provided near the film F, which is the object to be processed. In this first embodiment, since the high vacuum chamber 1 is grounded, the inner surface of the high vacuum chamber 1 functions as the grounding portion.

The smaller the volume of the plasma generation chamber A, the smaller the amount of gas can be, but if it is too small, sufficient plasma required for static elimination cannot be generated. Therefore, the volume of the plasma generation chamber A is determined according to the required plasma density and the like. However, in the present invention, it is an essential element that the volume of the plasma generation chamber A is relatively smaller than the volume of the high vacuum chamber 1.

Next, the process of static elimination processing of the first embodiment will be described.
When a positive voltage is applied to the second electrode 9 made of a mesh, an electric field is formed in the plasma generation chamber A between the second electrode 9 and the inner peripheral surface of the first electrode 7 and the through hole 6d. Then, when the gas from the gas supply source G is supplied into the electric field of the plasma generation chamber A, the gas concentration in the plasma generation chamber A becomes high and discharge occurs.

Then, the supply of the gas is a trigger, and the electrons and the gas molecules repeatedly collide in the plasma generation chamber A, and the plasma is generated by the collision.
The amount of gas supplied at this time is preset by the gas supply means M, but the inside of the plasma generation chamber A is in a low / medium / high vacuum state of 1 to 10 ^{+ 2} [Pa], which is optimal for plasma generation. It is preferable to set the gas concentration so as to be.

Further, when a positive voltage is applied to the second electrode 9, the following effects are obtained. Some of the electrons generated in the plasma generation chamber A pass through the second electrode 9 made of a mesh without colliding with the gas molecules. As shown in FIG. 2, even if some of the electrons that have passed through the second electrode 9 momentarily enter the high vacuum chamber 1, between the positive electrode 9 and the electrons. It is pulled back to the second electrode 9 side by the suction force of. An electron having a locus of being pulled back while passing through the second electrode 9 has a longer moving distance, so that the chance of colliding with a gas molecule increases accordingly. In this way, the more chances of collision between electrons and gas molecules, the more efficiently plasma will be generated.

The plasma generated as described above is guided toward the surface of the film F in the high vacuum chamber 1 via the communication portion 10, and the film processing surface and the grounding portion are made conductive by this plasma.
In this way, when the film processing surface and the grounding portion conduct with each other via the plasma, electrons flow from the lower potential side to the higher potential side when viewed from the electron level. Therefore, when the film-processed surface is positively charged, electrons on the grounding portion side having a low potential are guided to the film F side, so that the charge on the film-processed surface is neutralized and static electricity is eliminated. On the other hand, when the film-processed surface is negatively charged, electrons on the film-processed surface having a low potential are guided to the grounding portion side, so that the charge on the film-processed surface is neutralized and static electricity is eliminated.

Further, since the plasma generated in the plasma generation chamber A has a small amount of gas, it is instantaneously exhausted in the high vacuum chamber 1.
Since the static elimination process and the exhaust are performed almost simultaneously and instantaneously in this way, the static elimination process can be performed without damaging the high vacuum of the high vacuum chamber 1, and the processing process such as the film forming process and the static elimination process can be performed. Even if there is an antinomy relationship, they can be compatible.

Since the volume of the plasma generation chamber A can be reduced, the gas concentration in the plasma generation chamber A capable of plasma generation can be maintained. Moreover, since the gas supply amount per unit time of the gas supply means M and the gas supply time at one time can be set, an appropriate gas according to the volume of the plasma generation chamber A and the degree of vacuum of the high vacuum chamber 1 can be set. The quantity can be supplied intermittently. By that amount, the gas is efficiently converted into plasma.

For example, the valve control unit 14 repeatedly controls the opening and closing of the valve 13 so as to intermittently supply the gas set as described above to the plasma generation chamber A.
In this way, if gas is intermittently supplied to generate plasma, plasma can be continuously irradiated to a predetermined range of the film processing surface even if the film F is continuously conveyed, and the film processing can be performed. The entire surface can be statically eliminated. In this case, it is natural that the relative relationship between the timing at which plasma is intermittently generated and the transport speed of the film F must be adjusted.

Further, the closer the communication portion 10 of the plasma generation chamber A is to the object to be processed, the smaller the amount of gas can be.
Therefore, in this embodiment, the main body portion 6a of the lid member 6 is provided, and the length of the main body portion 6a in the depth direction is lengthened or shortened so that the distance between the communication portion 10 and the object to be processed is increased. It is possible to set.

In this first embodiment, a positive voltage is applied to the second electrode 9 which is a porous electrode, but an electric field for generating plasma is formed between the first electrode 7 and the second electrode 9. If possible, a negative voltage may be applied to the second electrode 9.
When such a negative voltage is applied, all the electrons from the second electrode 9 are completely confined in the plasma generation chamber A due to the action of their repulsive force. Therefore, the plasma generation efficiency in the plasma generation chamber A can be increased.

Further, in this first embodiment, the first electrode 7 and the gas supply means M are separate members, but the tip of a nozzle (not shown) in the gas supply means M may be the first electrode 7. In this case, by projecting the tip of the nozzle into the plasma generation chamber A and using the portion as the first electrode, it is not necessary to separately provide a member to be the electrode. The plasma generation chamber A can be reduced by that amount.

Further, in the first embodiment, the second electrode 9 is composed of a plate-shaped mesh which is a porous electrode, but the porous electrode may be a plate-shaped one having a large number of holes formed therein. Moreover, the form and number of holes are not limited as long as they do not interfere with the communication between the plasma generation chamber A and the high vacuum chamber 1. In addition to the porous electrode, the second electrode 9 may have various shapes such as a rod or a wire as an electrode.

Next, the second embodiment will be described with reference to FIG.
In the second embodiment, the first point is that the first electrode 7 is not attached from the atmosphere side of the lid member 6, but the plasma generation chamber A having a different configuration is attached from the high vacuum chamber 1 side of the lid member 6. It is different from the embodiment, and other configurations are the same as those of the first embodiment. Then, for the same components as those of the first embodiment, the description of the first embodiment is used as it is.

As shown in FIG. 3, the lid member 6 that supports the plasma generation chamber A is provided with a flange 6b around the opening of the cylindrical main body 6a, a bottom portion 6c is provided on the side opposite to the flange 6b, and the bottom portion is provided. A through hole 6d is formed in the central portion of 6c.
The tubular member 15 constituting the plasma generation chamber A is fixed to the high vacuum chamber 1 side of the bottom portion 6c of the lid member 6 as described above, and one opening of the tubular member 15, that is, the bottom portion 6c side. A plate-shaped first electrode 7 is fixed around the opening so as to close the opening. The space surrounded by the inner diameter portion of the tubular member 15 and the first electrode 7 is used as the plasma generation chamber A.

Further, the lid member 6 and the cylinder member 15 are fixed by a bolt k4, and the first electrode 7 and the cylinder member 15 are fixed by a bolt k2.
A seal member s3 is placed between the lid member 6 and the cylinder member 15, and a seal member s2 is placed between the first electrode 7 and the cylinder member 15 on the high vacuum chamber 1 side of the bolts k2 and k4. Each of them is provided, and the airtightness of the high vacuum chamber 1 is maintained.

Further, the second electrode 9 constitutes a plate-shaped porous electrode and is made of a mesh. The second electrode 9 is fixed in the tubular member 15 at a distance from the first electrode 7. However, the second electrode 9 and the tubular member 15 are insulated from each other.
The second electrode 9 may be provided at any position of the inner diameter portion of the tubular member 15 as long as the distance from the first electrode 7 is maintained.

Further, the plasma generation chamber A communicates with the high vacuum chamber 1 via a second electrode 9 made of a plate-shaped mesh. Then, the opening on the opposite side of the tubular member 15 provided with the first electrode 7 is opened into the high vacuum chamber 1 to form the communication portion 10.
Since the tubular member 15 is made of a metal that is a conductor, it conducts with the first electrode 7 and also with the high vacuum chamber 1 via the lid member 6.
Since the tubular member 15 is grounded, the inner peripheral surface of the tubular member 15 and the first electrode 7 are integrated and function as an electrode facing the second electrode 9. Therefore, since the surface area of the electrode forming the electric field with the second electrode 9 is increased, electric discharge is likely to occur.

In this second embodiment, the tubular member 15 uses a conductor, but an insulator such as resin may be used.
Further, in this second embodiment, the second electrode 9 is composed of a plate-shaped mesh which is a porous electrode, but the porous electrode may be a plate-shaped one having a large number of holes formed, and may be the plasma generation chamber A. The form and number of holes are not limited as long as they do not interfere with the communication with the high vacuum chamber 1. In addition to the porous electrode, the second electrode 9 may have various shapes such as a rod or a wire as an electrode.

Next, the third embodiment will be described with reference to FIG.
In the third embodiment, the plasma generation chamber A having a different configuration is attached from the high vacuum chamber 1 side of the lid member 6, and the plate-shaped first electrode 7 is directly fixed to the lid member 6. It is different from the embodiment, and other configurations are the same as those of the first embodiment. Then, for the same components as those of the first embodiment, the description of the first embodiment is referred to as it is.

The first electrode 7 closes the through hole 6d of the lid member 6 from the high vacuum chamber 1 side, and is directly fixed to the lid member 6 with a bolt k4.
A seal member s3 is provided between the first electrode 7 and the lid member 6 on the high vacuum chamber 1 side of the bolt k4 so that the airtightness of the high vacuum chamber 1 can be maintained.

The first electrode 7 is fixed on one opening side of the metal tubular member 15. The space surrounded by the inner diameter portion of the tubular member 15 and the first electrode 7 is designated as the plasma generation chamber A.
Further, in the other opening on the opposite side of the one opening of the tubular member 15, the second electrode 9 of the mesh kept at a distance from the first electrode 7 is fixed in the tubular member 15. However, the second electrode 9 and the tubular member 15 are insulated from each other.
In this third embodiment, since the tubular member 15 is not fixed to the lid member 6 with a bolt, it is not necessary to form the tubular member 15 thickly. Therefore, the tubular member 15 can be formed smaller.

In the third embodiment, the tubular member 15 uses a metal as a conductor, but an insulator such as a resin may be used.
Further, in the third embodiment, the second electrode 9 is composed of a plate-shaped mesh which is a porous electrode, but the porous electrode may be a plate-shaped one having a large number of holes formed, and may be the plasma generation chamber A. The form and number of holes are not limited as long as they do not interfere with the communication with the high vacuum chamber 1. Further, as the second electrode 9, in addition to the porous electrode, various shapes such as a rod and a wire can be used as the electrode.

Next, the fourth embodiment will be described with reference to FIG.
In the fourth embodiment, one opening of the grounded tubular first electrode 16 is directly closed by the insulating plate 17, and the insulating plate 17 is directly fixed to the lid member 6. A cylindrical second electrode 18 is provided at the center of the tubular first electrode 16 as described above.
The configuration other than the above is the same as that of the first embodiment. Then, for the same components as those of the first embodiment, the description of the first embodiment is used as it is.

In the fourth embodiment, as shown in FIG. 5, a disk-shaped insulating plate 17 is provided at one end of the cylindrical first electrode 16, and the first electrode 16 and the insulating plate 17 are combined. The plasma generation chamber A is formed.

The thickness of the insulating plate 17 is slightly increased, and the insulating plate 17 can be directly fixed to the lid member 6 with bolts k4.
A seal member s3 is provided between the lid member 6 and the insulating plate 17 on the high vacuum chamber 1 side of the bolt k4, and the airtightness of the high vacuum chamber 1 is maintained.

The plasma generation chamber A communicates with the high vacuum chamber 1 at the other end of the first electrode 16 on the opposite side of one end provided with the insulating plate 17. The other end is a communication portion 19.
Further, a plurality of gas supply holes 20 are formed in the disk-shaped insulating plate 17, and gas from the gas supply means M is supplied to the plasma generation chamber A through these gas supply holes 20.
Further, the second electrode 18 is connected to the power supply 11 outside the high vacuum chamber 1.

In this fourth embodiment, a positive voltage is applied to the second electrode 18 from the power supply 11. A predetermined distance is maintained between the first electrode 16 and the second electrode 18, and an electric field is formed between the electrodes 16 and 18.
In this first embodiment, a positive voltage is applied to the second electrode 18, but if an electric field for generating plasma can be formed between the first electrode 16 and the second electrode 18, it will be negative. The voltage of may be applied.

Further, in the fourth embodiment, the power supply 11 is directly connected to the second electrode 18, but if the power supply 11 can output a high voltage, a capacitor, a resistor, or the like of the first embodiment is provided. The configuration of the fourth embodiment can be used instead of the configuration.
Further, in the fourth embodiment, the first electrode 16 and the second electrode 18 may be provided by changing the polarities of the respective electrodes. In such a case, a voltage is applied to the cylindrical first electrode 16 and the cylindrical second electrode 18 provided in the cylinder is provided so as to be grounded.

In the first to fourth embodiments, the plasma generation chamber A is provided on the upstream side of the film forming processing mechanism 2 in the moving direction of the film F, but plasma is generated at a necessary place in the high vacuum chamber 1. Room A can be provided. For example, when there are a plurality of processing steps in the high vacuum chamber 1, the plasma generation chamber A can be provided near each processing step.
Since a plurality of plasma generation chambers A are provided, a plurality of plasmas can be irradiated to a predetermined processing range in one processing object, and static elimination processing can be performed with a high plasma density.

Further, in the first to fourth embodiments, the first electrodes 7 and 16 are grounded, but the first electrodes 7 and 16 need only have a potential difference with respect to the second electrodes 9 and 18, so that the potential difference is sufficient. The voltage may be applied to the first electrodes 7 and 16. When a voltage is applied to the first electrodes 7 and 16, it is natural that the first electrodes 7 and 16 can be provided on the lid member 6 or the like via an insulator.
Further, although direct current is used for the power source 11 in the first to fourth embodiments, alternating current may be used. However, when an AC power supply is used, this alternating voltage must be adjusted to a DC voltage.

In the first to fourth embodiments, the outer shape surrounding the plasma generation chamber A is cylindrical, but the outer shape is not limited to the cylindrical shape. For example, it may be a polygon or the like. Further, the outer shape surrounding the plasma generation chamber A of the first to fourth embodiments may be covered with another insulating member.

It can be applied to static elimination processing using plasma in a high vacuum chamber maintained in high vacuum.

1 ... high vacuum chamber, 3,4 ... roller, 5 ... drum, 6 ... lid member, 7,16 ... first electrode, 9,18 ... second electrode, 10,19 ... communication part, 12,20 ... gas supply Hole, 14 ... Valve control unit, 15 ... Cylinder member, 17 ... Insulation plate, A ... Plasma generation chamber, F ... Film, G ... Gas supply source

Claims (6)

A plasma generation chamber is provided, which is partitioned from a high vacuum chamber equipped with a grounding section while maintaining a high vacuum.
The plasma generation chamber is formed to have a relatively smaller volume than the high vacuum chamber.
In the plasma generation chamber,
A communication unit that communicates this plasma generation chamber with the high vacuum chamber,
The first and second electrodes that form an electric field facing each other,
It is equipped with a gas supply means that allows the gas supply amount to be set.
A window hole is formed in the high vacuum chamber, and a lid member having a larger outer diameter than the window hole is provided.
The lid member closes the window hole from the atmosphere side, and the lid member is formed with a through hole penetrating from the atmosphere side toward the inside of the high vacuum chamber while the window hole is closed.
While the first electrode having an outer diameter larger than the inner diameter of the through hole closes the through hole from the atmosphere side and is fixed to the lid member, while
A second electrode facing the first electrode is provided on the high vacuum chamber side through the through hole.
The space between the facing portion between the first electrode and the second electrode becomes the plasma generation chamber partitioned from the high vacuum chamber.
Plasma is generated by the gas supplied in the electric field between the first electrode and the second electrode.
The generated plasma is guided to the high vacuum chamber via the communication portion, and the object to be processed in the high vacuum chamber and the grounding portion are electrically connected to each other via the plasma guided to the high vacuum chamber. , A static eliminator that eliminates the electric charge of the object to be processed. A plasma generation chamber is provided, which is partitioned from a high vacuum chamber equipped with a grounding section while maintaining a high vacuum.
The plasma generation chamber is formed to have a relatively smaller volume than the high vacuum chamber.
In the plasma generation chamber,
A communication unit that communicates this plasma generation chamber with the high vacuum chamber,
The first and second electrodes that form an electric field facing each other,
A gas supply means that allows the gas supply amount to be set, and
A power supply that applies a voltage to the second electrode is provided.
Between the second electrode and the power supply, a capacitor connected in parallel with the power supply and a capacitor
Resistance is provided between the power supply and the capacitor, and between the capacitor and the second electrode, respectively.
Plasma is generated by the gas supplied in the electric field between the first electrode and the second electrode.
The generated plasma is guided to the high vacuum chamber via the communication portion, and the object to be processed in the high vacuum chamber and the grounding portion are electrically connected to each other via the plasma guided to the high vacuum chamber. A static eliminator that eliminates the electric charge of the object to be processed. The static elimination device according to claim 1 or 2, wherein the second electrode is made of a plate-shaped porous electrode, and the porous electrode is provided in the communication portion. The static elimination device according to claim 3, wherein a positive voltage is applied to the second electrode. The static elimination device according to claim 3, wherein a negative voltage is applied to the second electrode. The static elimination device according to any one of claims 1 to 5, wherein gas is intermittently supplied from the gas supply means in a state where a voltage is applied to the second electrode.

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