Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JP7118466B2 - light sensor - Google Patents
[go: Go Back, main page]

JP7118466B2 - light sensor - Google Patents

light sensor Download PDF

Info

Publication number
JP7118466B2
JP7118466B2 JP2021025216A JP2021025216A JP7118466B2 JP 7118466 B2 JP7118466 B2 JP 7118466B2 JP 2021025216 A JP2021025216 A JP 2021025216A JP 2021025216 A JP2021025216 A JP 2021025216A JP 7118466 B2 JP7118466 B2 JP 7118466B2
Authority
JP
Japan
Prior art keywords
light
emitting element
wavelength range
receiving element
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021025216A
Other languages
Japanese (ja)
Other versions
JP2021100130A (en
Inventor
優介 増成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kodenshi Corp
Original Assignee
Kodenshi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kodenshi Corp filed Critical Kodenshi Corp
Priority to JP2021025216A priority Critical patent/JP7118466B2/en
Publication of JP2021100130A publication Critical patent/JP2021100130A/en
Application granted granted Critical
Publication of JP7118466B2 publication Critical patent/JP7118466B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Description

本発明は、発光素子と受光素子とを備えている光センサに関する。 The present invention relates to an optical sensor comprising a light-emitting element and a light-receiving element.

上記光センサとしては、例えば基板上に所定間隔を置いて発光素子と受光素子とを配置し、樹脂モールドで一体化されたパッケージからなる光センサが提案されている。この光センサは、発光素子から照射した光が物体に当たって反射した反射光を受光素子で受光して物体の検知を行う反射センサである。この反射センサには、発光素子から側方に発せられる光が受光素子に入射して受光素子の検出感度が低下することを防止するための手段が施されている。その手段は、受光素子の側面に金属薄膜を蒸着して遮光処理を行う手段である(例えば、特許文献1参照)。 As the above optical sensor, there has been proposed an optical sensor comprising a package in which a light-emitting element and a light-receiving element are arranged on a substrate with a predetermined gap therebetween and integrated by resin molding. This optical sensor is a reflective sensor that detects an object by receiving light reflected by a light-receiving element when light emitted from a light-emitting element strikes an object. This reflective sensor is provided with means for preventing light emitted laterally from the light-emitting element from entering the light-receiving element and lowering the detection sensitivity of the light-receiving element. The means for this is a means for performing a light shielding process by evaporating a metal thin film on the side surface of the light receiving element (see, for example, Patent Document 1).

特公平4-33395号公報Japanese Patent Publication No. 4-33395

上記特許文献1の光センサでは、基板上に所定間隔を置いて発光素子と受光素子とを配置するため、パッケージのサイズが横方向に大きくなってしまう不都合がある。また、金属薄膜を蒸着して遮光処理を行うことが手間のかかる作業になるという不都合もある。 In the optical sensor disclosed in Patent Document 1, the light-emitting element and the light-receiving element are arranged on the substrate with a predetermined gap therebetween. In addition, there is also the inconvenience that the light-shielding process by evaporating a metal thin film is a laborious task.

本発明が前述の状況に鑑み、解決しようとするところは、パッケージの横方向のサイズを小型化することができるとともに遮光処理が不要となる光センサを提供することにある。 SUMMARY OF THE INVENTION In view of the above situation, the present invention aims to provide an optical sensor that can reduce the size of the package in the horizontal direction and that does not require light shielding.

本発明の光センサは、前述の課題解決のために、光を受光する受光素子の受光面上に該受光素子から離れる方向へ光を発光する発光素子を実装して一体化されたパッケージに構成され、前記受光素子は、前記発光素子が発光する光を受光することができない波長範囲になるように設定され、前記発光素子は、前記受光素子が入射光を受光した場合に点灯する又は消灯するあるいは点灯状態を変更するように構成されていることを特徴としている。 In order to solve the above problems, the optical sensor of the present invention is configured in an integrated package by mounting a light emitting element that emits light in a direction away from the light receiving element on the light receiving surface of the light receiving element that receives light. The light-receiving element is set to a wavelength range in which the light emitted by the light-emitting element cannot be received, and the light-emitting element is turned on or off when the light-receiving element receives the incident light. Alternatively, it is characterized in that it is configured to change the lighting state.

上記構成によれば、光を受光する受光素子の受光面上に該受光面とは反対側へ光を発光する発光素子を実装して一体化しているので、基板上に受光素子と発光素子とを横方向に所定間隔を置いて配置する場合に比べて、横方向のサイズを小型化することができる。しかも、受光素子は、発光素子が発光する光を受光することができない波長範囲になるように設定されているため、金属薄膜を蒸着して遮光処理を行うことが不要になるとともに、発光素子から照射される光に対して受光素子の出力を大幅に小さくすることができる。また、受光素子が入射光を受光した場合に、消灯状態の発光素子が点灯する、又は点灯状態の発光素子が消灯する、あるいは点灯状態を変更する(色が変化する又は点灯状態から点滅状態に変化するあるいは点滅状態から点灯状態に変化する)ように構成されているので、発光素子の発光状態を見るだけで、受光素子に光が入射したことを確認することができる。 According to the above configuration, since the light emitting element that emits light to the side opposite to the light receiving surface is mounted on the light receiving surface of the light receiving element that receives light and is integrated, the light receiving element and the light emitting element are mounted on the substrate. The size in the horizontal direction can be reduced compared to the case where the are arranged at predetermined intervals in the horizontal direction. Moreover, since the light-receiving element is set to a wavelength range in which the light emitted by the light-emitting element cannot be received, it is not necessary to vapor-deposit a metal thin film for light-shielding treatment, and the The output of the light receiving element can be greatly reduced with respect to the irradiated light. Further, when the light receiving element receives the incident light, the light emitting element in the off state lights up, the light emitting element in the on state goes off, or the lighting state changes (the color changes or changes from the lighting state to the blinking state). or change from a blinking state to a lit state), it is possible to confirm that light is incident on the light receiving element simply by looking at the light emitting state of the light emitting element.

また、本発明の光センサは、前記受光素子の受光面には、該受光面に入射してくる光を前記発光素子が発光する光の波長範囲とは異なる波長範囲の光を受光すべく、特定の波長範囲の光をカットする光学フィルターを備えていてもよい。 In the optical sensor of the present invention, the light-receiving surface of the light-receiving element receives light in a wavelength range different from the wavelength range of the light emitted by the light-emitting element. An optical filter that cuts light in a specific wavelength range may be provided.

上記のように、受光面に入射してくる光を光学フィルターで発光素子が発光する光の波長範囲とは異なる波長範囲の光を受光すべく、特定の波長範囲の光をカットすることによって、受光素子の受光面に入射してくる光を確実に受光することができる。また、光学フィルターを備える場合には、透過率や偏光方向を含む特性の異なる種々の光学フィルターに取り替えるだけで、波長範囲を容易に変更することができる。 As described above, by cutting light in a specific wavelength range in order to receive light in a wavelength range different from the wavelength range of light emitted by the light emitting element with the optical filter, the light incident on the light receiving surface is cut. Light incident on the light-receiving surface of the light-receiving element can be reliably received. Moreover, when an optical filter is provided, the wavelength range can be easily changed by simply replacing it with various optical filters having different characteristics including transmittance and polarization direction.

また、本発明の光センサは、前記受光素子を封止するための封止樹脂の中に、前記発光素子から発光される光を受光感度の小さい波長の光に変換し、かつ、前記発光素子からの発光される光の色を調色するための一色又は複数色の蛍光体を含有していてもよい。 In the optical sensor of the present invention, a sealing resin for sealing the light receiving element converts light emitted from the light emitting element into light of a wavelength having a low light receiving sensitivity, and It may also contain one or more color phosphors to tone the color of the light emitted from it.

上記のように、封止樹脂の中に一色又は複数色の蛍光体を含有しているので、発光素子から発光される光を受光感度の小さい波長の光に変換することができ、かつ、発光素子からの発光される光の色を調色することができる。 As described above, since the encapsulating resin contains phosphors of one color or multiple colors, the light emitted from the light-emitting element can be converted into light of a wavelength with low light-receiving sensitivity, and light is emitted. The color of the light emitted from the device can be toned.

また、本発明の光センサは、前記発光素子から照射された光が反射物に反射してきた光を前記受光素子で受光する反射センサとして動作するように構成されていてもよい。 Further, the optical sensor of the present invention may be configured to operate as a reflection sensor in which light emitted from the light emitting element and reflected by a reflecting object is received by the light receiving element.

本発明によれば、受光素子の受光面上に発光素子を実装するとともに、発光素子が発光する光の波長範囲とは異なる波長範囲の光を受光する受光素子を備えることによって、パッケージの横方向のサイズを小型化することができるとともに遮光処理が不要となる光センサを提供することができる。 According to the present invention, by mounting the light-emitting element on the light-receiving surface of the light-receiving element and providing the light-receiving element for receiving light in a wavelength range different from the wavelength range of the light emitted by the light-emitting element, It is possible to provide an optical sensor that can reduce the size of and does not require a light shielding treatment.

本発明の光センサの第1実施形態を示し、(a)は平面図、(b)は正面図、(c)は反射物を上方に配置した正面図である。BRIEF DESCRIPTION OF THE DRAWINGS The first embodiment of the optical sensor of the present invention is shown, (a) is a plan view, (b) is a front view, and (c) is a front view in which a reflector is arranged above. 本発明の光センサの第2実施形態を示し、(a)は平面図、(b)は正面図、(c)は反射物を上方に配置した正面図である。2nd Embodiment of the optical sensor of this invention is shown, (a) is a top view, (b) is a front view, (c) is a front view which has arrange|positioned the reflector above. 発光素子と受光素子の波長範囲に対する光の強度を示すグラフであり、(a)は発光波長に対する受光感度が極めて小さくなった受光素子を用いた場合を示し、(b)は所定の波長範囲をカットした受光素子を用いた場合を示している。2 is a graph showing the intensity of light with respect to the wavelength range of a light-emitting element and a light-receiving element, where (a) shows a case where a light-receiving element with extremely low light-receiving sensitivity to the emission wavelength is used, and (b) shows a predetermined wavelength range. A case of using a cut light-receiving element is shown. 本発明の光センサの第3実施形態を示し、波長を変換する蛍光体を樹脂中に混入させた光センサの正面図である。FIG. 10 is a front view of an optical sensor in which a wavelength-converting phosphor is mixed in resin, showing a third embodiment of the optical sensor of the present invention. 本発明の光センサの第4実施形態を示し、2つのセンサを対向配置して双方向の光通信を行う構成を示す正面図である。FIG. 12 is a front view showing a fourth embodiment of the optical sensor of the present invention, showing a configuration in which two sensors are arranged to face each other and two-way optical communication is performed.

<第1実施形態>
図1(a),(b),(c)は、光センサ1を示している。この光センサ1は、基板2と、基板2の上面2Aに受光素子3を搭載し、受光素子3の上面である受光面3Aに発光素子4を搭載し、発光素子4及び受光素子3を封止するための透光性材料でなる封止樹脂(例えばシリコーン樹脂又はエポキシ樹脂)5と、を備えて一つのパッケージから構成されている。また、発光素子4と基板2とを接続する2本のボンディングワイヤ6,7と、受光素子3と基板2とを接続する1本のボンディングワイヤ8と、を備えている。
<First embodiment>
1(a), (b), and (c) show an optical sensor 1. FIG. This optical sensor 1 includes a substrate 2 and a light receiving element 3 mounted on the upper surface 2A of the substrate 2, a light emitting element 4 mounted on the light receiving surface 3A which is the upper surface of the light receiving element 3, and the light emitting element 4 and the light receiving element 3 sealed. A single package is provided with a sealing resin (for example, silicone resin or epoxy resin) 5 made of a translucent material for sealing. Further, two bonding wires 6 and 7 connecting the light emitting element 4 and the substrate 2 and one bonding wire 8 connecting the light receiving element 3 and the substrate 2 are provided.

基板2は、平面視長方形状(正方形や円形あるいは多角形などであってもよい)に構成され、ガラスエポキシ樹脂又はリードフレーム構造で形成されている。 The substrate 2 is rectangular in plan view (square, circular, or polygonal) and is made of glass epoxy resin or a lead frame structure.

発光素子4は、受光素子3の受光面3Aの中央に、発光面4Aからの光が受光素子3から離れる側へ発光するように(具体的には、図1(b),(c)に示すように、発光面4Aが受光素子3の受光面3Aと同様に上方を向いている状態で)配置され、受光素子3よりも小さな長方形状(正方形や円形あるいは多角形などであってもよい)に構成されている。ここでは、受光素子3の受光面3Aの中央に発光素子4を配置しているが、受光面3Aの中央以外に発光素子4を配置してもよい。また、例えば図3(a)に、実線で示す発光波長に対する受光感度が極めて小さい点線で示す受光素子3の波長範囲(感度波長範囲)9を示している。具体的には、この発光素子4の波長範囲が380nm~440nmであり、ピーク波長が400nmの光を発する発光素子4から構成されている。また、図3(b)にも、実線で示す発光波長に対する受光感度が極めて小さい点線で示す受光素子3の波長範囲11を示している。この発光素子4の波長範囲12が400nm~500nmであり、ピーク波長が450nmの光を発する発光素子4から構成されていてもよい。本発明の発光素子4の波長範囲は、自由に変更することができる。 The light-emitting element 4 is arranged at the center of the light-receiving surface 3A of the light-receiving element 3 so that the light from the light-emitting surface 4A is emitted to the side away from the light-receiving element 3 (specifically, as shown in FIGS. 1B and 1C). As shown, the light emitting surface 4A is arranged facing upward in the same manner as the light receiving surface 3A of the light receiving element 3) and is smaller than the light receiving element 3 in a rectangular shape (square, circular, polygonal, etc.). ). Although the light emitting element 4 is arranged in the center of the light receiving surface 3A of the light receiving element 3 here, the light emitting element 4 may be arranged in a position other than the center of the light receiving surface 3A. Further, for example, FIG. 3A shows a wavelength range (sensitivity wavelength range) 9 of the light receiving element 3 indicated by a dotted line in which the light receiving sensitivity to the emission wavelength indicated by a solid line is extremely small. Specifically, the wavelength range of the light emitting element 4 is 380 nm to 440 nm, and the light emitting element 4 emits light with a peak wavelength of 400 nm. FIG. 3(b) also shows the wavelength range 11 of the light receiving element 3 indicated by the dotted line, in which the light receiving sensitivity to the emission wavelength indicated by the solid line is extremely low. The wavelength range 12 of the light emitting element 4 is 400 nm to 500 nm, and the light emitting element 4 may be configured to emit light with a peak wavelength of 450 nm. The wavelength range of the light emitting element 4 of the present invention can be freely changed.

受光素子3は、受光面3Aが露出するように発光素子4よりも大きな長方形状(正方形や円形あるいは多角形などであってもよい)に構成されている。また、受光素子3は、例えば図3(a)に示すように、発光波長に対する受光感度が極めて小さい波長範囲を有している。具体的には、波長範囲が400nm~1100nmであり、ピーク波長が1000nmである受光素子から構成されている。また、図3(b)にも、300nm~600nmまでの所定範囲の波長範囲がカットされて、発光波長に対する受光感度が極めて小さくなった受光素子3の波長範囲を示している。具体的には、受光素子3の波長範囲が600nm~1100nmであり、ピーク波長が780nmである受光素子3から構成されていてもよい。本発明の受光素子3の波長範囲は、自由に変更することができる。要するに、受光素子3は、発光素子4が発光する光を受光することができない波長範囲(感度波長範囲)になるように設定されている。尚、図3(a),(b)のグラフでは、縦軸に相対強度(感度)を取り、横軸に波長(nm)を取っている。 The light-receiving element 3 is formed in a rectangular shape (which may be square, circular, polygonal, or the like) larger than the light-emitting element 4 so that the light-receiving surface 3A is exposed. Moreover, the light receiving element 3 has a wavelength range in which the light receiving sensitivity with respect to the emission wavelength is extremely low, as shown in FIG. 3(a), for example. Specifically, the wavelength range is 400 nm to 1100 nm, and the peak wavelength is 1000 nm. FIG. 3(b) also shows the wavelength range of the light receiving element 3 in which the predetermined wavelength range from 300 nm to 600 nm is cut and the light receiving sensitivity with respect to the emission wavelength is extremely small. Specifically, the light receiving element 3 may have a wavelength range of 600 nm to 1100 nm and a peak wavelength of 780 nm. The wavelength range of the light receiving element 3 of the present invention can be freely changed. In short, the light receiving element 3 is set to have a wavelength range (sensitivity wavelength range) in which the light emitted by the light emitting element 4 cannot be received. In the graphs of FIGS. 3A and 3B, the vertical axis represents relative intensity (sensitivity) and the horizontal axis represents wavelength (nm).

前記のように構成された光センサ1は、図1(b)に、インジケータ付光センサとして使用する場合を示している。この光センサ1には、受光素子3が入射する光13を受光すると、その受光信号に基づいて発光素子4を発光させるための制御部(図示せず)を備えている。従って、受光素子3が入射光13を受光すると、消灯状態の発光素子4が光(可視光)14を発光して点灯するインジケータランプとして動作するように構成されている。このとき、受光素子3が受光する光の波長範囲と発光素子4が発光する波長範囲とが、前述したように異なる範囲になっている。このように発光素子4がインジケータランプとして動作するように構成されているので、発光素子4の発光状態(ここでは点灯している発光素子4の光(可視光)14)を見るだけで、受光素子3に光13が入射したことを確認することができる。また、受光素子3が入射光を受光した場合に、点灯状態の発光素子4が消灯する、又は点灯状態を変更する(色が変化する又は点灯状態から点滅状態に変化するあるいは点滅状態から点灯状態に変化する)構成であってもよい。 FIG. 1(b) shows a case where the optical sensor 1 constructed as described above is used as an optical sensor with an indicator. The optical sensor 1 includes a control unit (not shown) for causing the light emitting element 4 to emit light based on the received light signal when the light receiving element 3 receives the incident light 13 . Therefore, when the light-receiving element 3 receives the incident light 13, the light-emitting element 4 in the off state emits light (visible light) 14 to operate as an indicator lamp that lights up. At this time, the wavelength range of light received by the light receiving element 3 and the wavelength range of light emitted by the light emitting element 4 are different ranges as described above. Since the light-emitting element 4 is configured to operate as an indicator lamp in this manner, the light is received simply by looking at the light-emitting state of the light-emitting element 4 (in this case, the light (visible light) 14 of the light-emitting element 4 that is lit). It can be confirmed that the light 13 has entered the element 3 . Further, when the light receiving element 3 receives the incident light, the light emitting element 4 in the lighting state is extinguished or the lighting state is changed (the color changes, or the lighting state changes from the lighting state to the blinking state, or from the blinking state to the lighting state). ) configuration.

また、図1(c)に、前記光センサ1を反射センサとして使用する場合を示している。つまり、発光素子4から発光された光14が反射物(対象物)16に当たって反射してきた光17(発光素子4から発光された光15の波長範囲とは異なる波長範囲に変換された光)を受光素子3で受光することによって、反射物16を検出することができる反射センサとして機能する。 Further, FIG. 1(c) shows a case where the optical sensor 1 is used as a reflection sensor. That is, the light 17 (light converted into a wavelength range different from the wavelength range of the light 15 emitted from the light emitting element 4) reflected by the reflecting object (object) 16 from the light 14 emitted from the light emitting element 4 is converted into By receiving light with the light receiving element 3, it functions as a reflection sensor capable of detecting the reflecting object 16. FIG.

前述のように、受光素子3の受光面3A上に発光素子4を実装して一体化しているので、基板上に受光素子と発光素子とを横方向に所定間隔を置いて配置する場合に比べて、横方向のサイズを小型化することができる。しかも、発光素子4が発光する光の波長範囲とは異なる波長範囲の光を受光するように構成された受光素子3であるため、金属薄膜を蒸着して遮光処理を行うことが不要になるとともに、発光素子4から照射される光に対して受光素子3の出力を大幅に小さくすることができる。また、図1(c)に示すように、光センサ1を反射センサとして使用する場合に、発光素子4から照射された光15が反射物(対象物)16に当たって反射してきた光17を、発光素子4の光軸4Lにできるだけ近付けた位置に配置した受光素子3で効率よく受光することができる。 As described above, since the light-emitting element 4 is mounted on the light-receiving surface 3A of the light-receiving element 3 and integrated, the light-receiving element and the light-emitting element are arranged on the substrate with a predetermined interval in the horizontal direction. Therefore, the horizontal size can be reduced. Moreover, since the light-receiving element 3 is configured to receive light in a wavelength range different from the wavelength range of the light emitted by the light-emitting element 4, it is not necessary to vapor-deposit a metal thin film for light-shielding treatment. , the output of the light receiving element 3 can be greatly reduced with respect to the light emitted from the light emitting element 4 . Further, as shown in FIG. 1(c), when the optical sensor 1 is used as a reflection sensor, the light 15 emitted from the light emitting element 4 hits a reflecting object (object) 16, and the reflected light 17 is converted into light. The light can be efficiently received by the light receiving element 3 arranged at a position as close as possible to the optical axis 4L of the element 4. FIG.

<第2実施形態>
第1実施形態では、図1(b)に示す、受光素子3に直接入射してくる光13及び図1(c)に示す、発光素子4から発光された光15が反射物16に当たって反射してきた光17が、発光素子4から発光された光15の波長範囲と異なる波長範囲の光であったが、図2(a),(b),(c)では、受光素子3の受光面3Aに、受光面3Aに入射してくる光を発光素子4が発光する光の波長範囲とは異なる波長範囲の光を受光すべく、特定の波長範囲の光をカットする光学フィルター18を備えている。図3(b)に光学フィルター18により300nm~600nmの範囲の波長がカットされた受光素子3の波長範囲を示している。また、光学フィルターを備える場合には、透過率や偏光方向を含む特性の異なる種々の光学フィルターに取り替えるだけで、波長範囲を容易に変更することができる。
<Second embodiment>
In the first embodiment, the light 13 directly incident on the light receiving element 3 shown in FIG. 1B and the light 15 emitted from the light emitting element 4 shown in FIG. Although the light 17 emitted from the light emitting element 4 has a wavelength range different from that of the light 15 emitted from the light emitting element 4, in FIGS. 2, an optical filter 18 is provided for cutting light in a specific wavelength range in order to receive light in a wavelength range different from the wavelength range of light emitted by the light emitting element 4 from the light incident on the light receiving surface 3A. . FIG. 3(b) shows the wavelength range of the light-receiving element 3 in which the wavelength range of 300 nm to 600 nm is cut by the optical filter 18. As shown in FIG. Moreover, when an optical filter is provided, the wavelength range can be easily changed by simply replacing it with various optical filters having different characteristics including transmittance and polarization direction.

図2(a),(b),(c)では、光学フィルター18を受光素子3の受光面3Aに備えている構成以外の構成は、図1(a),(b),(c)と同様であるため、同一の符号を付すとともに、説明を省略する。尚、図2(b)では、図1(b)と同様に、光センサ1をインジケータ付光センサとして使用する場合を示し、図2(c)では、図1(c)と同様に、光センサ1を反射センサとして使用する場合を示している。 2A, 2B, and 2C, the configurations other than the configuration in which the optical filter 18 is provided on the light receiving surface 3A of the light receiving element 3 are the same as those in FIGS. 1A, 1B, and 1C. Since they are the same, they are denoted by the same reference numerals and their description is omitted. 2(b) shows a case where the optical sensor 1 is used as an optical sensor with an indicator, as in FIG. 1(b), and FIG. It shows the case where the sensor 1 is used as a reflection sensor.

<第3実施形態>
第2実施形態では、受光素子3の受光面3Aに、受光面3Aに入射してくる光を発光素子4が発光する光の波長範囲とは異なる波長範囲の光に光変換する光学フィルター18を備えた場合を示したが、図4に示すように、封止樹脂5の中に一色又は複数色の蛍光体19を含有してもよい。この蛍光体19により、発光素子4から発光される光14を受光感度の小さい波長の光に変換することができ、かつ、発光素子4からの発光される光の色を調色することができる。例えば、青色発光素子を用いる場合には、赤色と緑色の蛍光体又は黄色と赤色の蛍光体を用いることによって、封止樹脂5からチップ外へ放射された光が白色光を発光することができる。図4では、発光素子4から発光される光14が蛍光体19に当たって波長変換され、その波長変換された光は、受光素子3が受光しない構成である。また、前記受光素子3は、外部から入射してきた光13のうち、発光素子4が発光する光の波長範囲も受光しない構成である。つまり、図4の受光素子3は、前記蛍光体19で波長変換された光の波長範囲及び前記発光素子4が発光する光の波長範囲を除く波長範囲の光を受光するように構成されている。
<Third Embodiment>
In the second embodiment, an optical filter 18 is provided on the light-receiving surface 3A of the light-receiving element 3 to convert light incident on the light-receiving surface 3A into light in a wavelength range different from the wavelength range of the light emitted by the light-emitting element 4. Although the case is shown, as shown in FIG. 4, the sealing resin 5 may contain the phosphor 19 of one color or plural colors. The phosphor 19 can convert the light 14 emitted from the light-emitting element 4 into light having a wavelength with low light-receiving sensitivity, and can adjust the color of the light emitted from the light-emitting element 4. . For example, when a blue light-emitting element is used, red and green phosphors or yellow and red phosphors are used so that the light emitted from the sealing resin 5 to the outside of the chip can emit white light. . In FIG. 4, the light 14 emitted from the light emitting element 4 hits the phosphor 19 and is wavelength-converted, and the light receiving element 3 does not receive the wavelength-converted light. Further, the light receiving element 3 is configured not to receive the wavelength range of the light emitted by the light emitting element 4 among the light 13 incident from the outside. That is, the light receiving element 3 of FIG. 4 is configured to receive light in a wavelength range excluding the wavelength range of the light wavelength-converted by the phosphor 19 and the wavelength range of the light emitted by the light emitting element 4. .

<第4実施形態>
第1実施形態~第3実施形態では、一つの光センサ1を使用した場合を示したが、図5に示すように、2つの光センサ20,21を使用して双方向で波長が異なる可視光と赤外光とで光通信ができる光通信装置として用いるようにしてもよい。この場合、一方(図5の下側)の第1光センサ20の発光素子4が、赤外光22を発光し、他方(図5の上側)の第2光センサ21の受光素子3が、第1光センサ20の赤外光22を受光することによって、第2光センサ21の発光素子4が可視光23を発光し、この第2光センサ21からの可視光23を第1光センサ20の受光素子3が受光する。
<Fourth Embodiment>
In the first to third embodiments, the case where one optical sensor 1 is used is shown, but as shown in FIG. It may be used as an optical communication device capable of optical communication using light and infrared light. In this case, the light emitting element 4 of the first optical sensor 20 on one side (lower side in FIG. 5) emits infrared light 22, and the light receiving element 3 of the second optical sensor 21 on the other side (upper side in FIG. 5) By receiving the infrared light 22 of the first photosensor 20, the light emitting element 4 of the second photosensor 21 emits visible light 23, and the visible light 23 from the second photosensor 21 is transmitted to the first photosensor 20. light receiving element 3 receives the light.

尚、本発明は、前記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更が可能である。 It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.

前記実施形態では、受光素子3に対して1個の発光素子4を設けた光センサ1を示したが、複数個(2個以上の任意の個数)の発光素子を設けて実施してもよい。また、受光素子が複数の波長範囲をそれぞれ受光する構成であってもよい。 In the above embodiment, the optical sensor 1 provided with one light emitting element 4 for the light receiving element 3 is shown, but it may be implemented by providing a plurality of light emitting elements (any number of two or more). . Alternatively, the light receiving element may be configured to receive light in a plurality of wavelength ranges.

1…光センサ、2…基板、2A…上面、3…受光素子、3A…受光面、4…発光素子、4A…発光面、4L…光軸、5…封止樹脂、6,7,8…ボンディングワイヤ、9…受光素子の波長範囲(感度波長範囲)、10…発光素子の波長範囲(発光波長範囲)、11…受光素子の波長範囲(感度波長範囲)、12…発光素子の波長範囲(発光波長範囲)、13,14,15,17…光、16…反射物、18…光学フィルター、19…蛍光体、20…第1光センサ、21…第2光センサ、22,23…光 DESCRIPTION OF SYMBOLS 1... Optical sensor 2... Substrate 2A... Upper surface 3... Light receiving element 3A... Light receiving surface 4... Light emitting element 4A... Light emitting surface 4L... Optical axis 5... Sealing resin 6, 7, 8... Bonding wire, 9... Wavelength range of light receiving element (sensitivity wavelength range), 10... Wavelength range of light emitting element (light emission wavelength range), 11... Wavelength range of light receiving element (sensitivity wavelength range), 12... Wavelength range of light emitting element ( Emission wavelength range), 13, 14, 15, 17... light, 16... reflector, 18... optical filter, 19... phosphor, 20... first optical sensor, 21... second optical sensor, 22, 23... light

Claims (1)

光を受光する受光素子の受光面上に該受光素子から離れる方向へ光を発光する発光素子を実装して一体化されたパッケージに構成され、
前記受光素子は、受光面が露出するように前記発光素子よりも大きく構成されるとともに、前記発光素子が発光する光を受光することができない波長範囲になるように設定され、
前記発光素子は、前記受光素子が入射光を受光した場合に点灯する又は消灯するあるいは点灯状態を変更するように構成され
前記発光素子の波長範囲が、380nm~440nmであり、該発光素子のピーク波長が400nmであり、
前記受光素子の波長範囲が、400nm~1100nmであり、該受光素子のピーク波長が1000nmであることを特徴とする光センサ。
A light-emitting element that emits light in a direction away from the light-receiving element is mounted on the light-receiving surface of the light-receiving element for receiving light, and is integrated into a package,
The light-receiving element is configured to be larger than the light-emitting element so that the light-receiving surface is exposed, and is set to a wavelength range in which the light emitted by the light-emitting element cannot be received,
The light-emitting element is configured to turn on, turn off, or change the lighting state when the light-receiving element receives incident light ,
The wavelength range of the light emitting element is 380 nm to 440 nm, the peak wavelength of the light emitting element is 400 nm,
The optical sensor, wherein the light receiving element has a wavelength range of 400 nm to 1100 nm and a peak wavelength of 1000 nm .
JP2021025216A 2016-07-29 2021-02-19 light sensor Active JP7118466B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021025216A JP7118466B2 (en) 2016-07-29 2021-02-19 light sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016149907A JP6846786B2 (en) 2016-07-29 2016-07-29 Optical sensor
JP2021025216A JP7118466B2 (en) 2016-07-29 2021-02-19 light sensor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2016149907A Division JP6846786B2 (en) 2016-07-29 2016-07-29 Optical sensor

Publications (2)

Publication Number Publication Date
JP2021100130A JP2021100130A (en) 2021-07-01
JP7118466B2 true JP7118466B2 (en) 2022-08-16

Family

ID=61076797

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016149907A Active JP6846786B2 (en) 2016-07-29 2016-07-29 Optical sensor
JP2021025216A Active JP7118466B2 (en) 2016-07-29 2021-02-19 light sensor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2016149907A Active JP6846786B2 (en) 2016-07-29 2016-07-29 Optical sensor

Country Status (1)

Country Link
JP (2) JP6846786B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019103155A1 (en) 2019-02-08 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung OPTOELECTRONIC SENSOR ARRANGEMENT AND OPTICAL MEASURING METHOD
WO2021005952A1 (en) * 2019-07-10 2021-01-14 株式会社村田製作所 Optical sensor and proximity sensor provided with same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090034982A1 (en) 2007-07-23 2009-02-05 Finisar Corporation Integrated laser and photodetector chip for an optical subassembly
JP2013030645A (en) 2011-07-29 2013-02-07 Panasonic Industrial Devices Sunx Co Ltd Photoelectric sensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016112B2 (en) * 1978-04-19 1985-04-23 松下電器産業株式会社 Light emitting/light receiving element
JPS57184261A (en) * 1981-05-08 1982-11-12 Omron Tateisi Electronics Co Element for light emission and detection
JPS58199573A (en) * 1982-05-17 1983-11-19 Hitachi Ltd semiconductor equipment
JPS6320879A (en) * 1986-07-15 1988-01-28 Omron Tateisi Electronics Co Light-emitting and light-receiving element
JP2529590B2 (en) * 1988-07-29 1996-08-28 株式会社アルファ Infrared receiver for vehicle
JPH10154826A (en) * 1996-11-22 1998-06-09 Sharp Corp Optical coupling device
KR101067653B1 (en) * 2009-09-25 2011-09-26 전자부품연구원 Package module in which light-emitting and light-receiving elements with optical instruments are integrally formed

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090034982A1 (en) 2007-07-23 2009-02-05 Finisar Corporation Integrated laser and photodetector chip for an optical subassembly
JP2013030645A (en) 2011-07-29 2013-02-07 Panasonic Industrial Devices Sunx Co Ltd Photoelectric sensor

Also Published As

Publication number Publication date
JP6846786B2 (en) 2021-03-24
JP2018019013A (en) 2018-02-01
JP2021100130A (en) 2021-07-01

Similar Documents

Publication Publication Date Title
JP5624592B2 (en) Improved structure of small size light emitting diode package that can improve the emission angle
CN106662304B (en) Lighting device with at least one light sensor
JP2015032373A5 (en)
CN103459916A (en) Lighting device and light source device
US10374196B2 (en) Lighting device with color scattering layer and method for producing a lighting device
JP2010532104A5 (en)
JP7118466B2 (en) light sensor
KR101457806B1 (en) LED Package and Method of Manufacturing the Same
JP5796211B2 (en) Lighting device and lighting system using the same
WO2014083523A1 (en) Light emitting arrangement with controlled spectral properties and angular distribution
CN106129051A (en) Optical sensing device and manufacturing method of optical device
JP2008218089A (en) Lighting device
US20100001653A1 (en) Optical lighting device
TWI594033B (en) Optocoupler
JP6583671B2 (en) Lighting device
TW201442291A (en) Light emitting diode package structure
JP6685738B2 (en) Light emitting device
KR101518459B1 (en) Light emitting diode package
TWI608601B (en) Led module, led array module and display module
KR101906629B1 (en) Lighting device
TWI578574B (en) Light-emitting element structure
CN115719539A (en) Optical machine structure of smoke detector
WO2018180658A1 (en) Wavelength conversion element and light emitting device
KR102432220B1 (en) Semiconductor device and semiconductor module
JP2009177101A (en) Light emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210401

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220418

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220701

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220727

R150 Certificate of patent or registration of utility model

Ref document number: 7118466

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250