JP7120406B2 - Vibration device, electronic equipment and moving object - Google Patents

Description

TECHNICAL FIELD The present invention relates to a vibrating device, and an electronic device and a moving body equipped with this vibrating device.

Conventionally, as an example of a vibration device, there is provided a container having a piezoelectric vibration element, a temperature-sensitive component, a first housing portion for housing the piezoelectric vibration element, and a second housing portion for housing the temperature-sensitive component. , the container has a first insulating substrate having a through-hole constituting the second accommodating portion and a plurality of mounting terminals on the bottom; A second insulating substrate provided with a first electrode pad for mounting a temperature-sensitive component and a second electrode pad for mounting a temperature-sensitive component on the back surface; A piezoelectric device including a third substrate forming a housing is known (see, for example, Patent Document 1).

In this piezoelectric device, at least one mounting terminal and a first electrode pad are electrically connected by a first heat conducting portion and a first wiring pattern, and at least one other mounting terminal and a second electrode are connected. The pads are electrically connected by the second heat conducting portion and the second wiring pattern, so that the temperature difference between the temperature of the piezoelectric vibrating element and the temperature detected by the temperature sensitive component can be reduced. , good frequency-temperature characteristics can be obtained.

JP 2013-102315 A

However, when the piezoelectric device is mounted on an external member such as an electronic device, depending on the distance in the thickness direction from the mounting terminal of the first insulating substrate to the temperature-sensitive component in the second housing, the second Due to the heat-insulating effect of the air that is warmed when the temperature rises, the temperature difference between the temperature of the piezoelectric vibrating element and the temperature detected by the temperature-sensitive component increases when the temperature drops, for example.
As a result, the piezoelectric device may have deteriorated frequency temperature characteristics.

The present invention has been made to solve at least part of the above problems, and can be implemented as the following forms or application examples.

[Application Example 1] A vibrating device according to this application example includes a vibrating reed, an electronic element, and a substrate having a first principal surface and a second principal surface that are opposite to each other, and the vibrating reed , the electronic element is mounted on the first main surface side of the substrate, the electronic element is housed in a recess provided on the second main surface side of the substrate, and the second main surface side of the substrate is: , a plurality of electrode terminals connected to the vibrating reed or the electronic element are provided, and the distance from the mounting surface of the electrode terminals to the electronic element in a first direction orthogonal to the first main surface is 0.5. 05 mm or more.

According to this, since the vibration device has a distance of 0.05 mm or more from the mounting surface of the electrode terminal to the electronic element in the first direction (in other words, the thickness direction of the substrate), it can be When mounted on the external member of the electronic device, the flow of air in the recess is promoted, and the delay in the temperature drop of the electronic element caused by the retention of the air in the recess can be reduced.
As a result, the vibration device can reduce the temperature difference between the temperature of the vibrating reed and the temperature detected by the temperature sensing element, for example, when the electronic element is a temperature sensing element (temperature sensing component).
Thereby, the vibrating device can obtain good frequency-temperature characteristics.

Application Example 2 In the vibrating device according to the application example described above, it is preferable that a distance in the first direction from the mounting surface of the electrode terminal to the bottom surface of the recess is less than 0.3 mm.

According to this, in the vibrating device, the distance in the first direction from the mounting surface of the electrode terminal to the bottom surface of the recess is less than 0.3 mm. It is possible to reduce the thickness while reducing the temperature difference.
As a result, the vibrating device can obtain good frequency-temperature characteristics while achieving a reduction in thickness.

[Application Example 3] In the vibration device according to the application example described above, a first imaginary center line passing through the center of the electronic element in the first direction and extending along the first main surface; A distance in the first direction from a second imaginary center line passing through the center in the direction and extending along the first main surface is preferably in the range of 0.18 mm or more and 0.32 mm or less.

According to this, in the vibrating device, the distance in the first direction between the first imaginary center line of the electronic element and the second imaginary center line of the vibrating bars is within the range of 0.18 mm or more and 0.32 mm or less. Therefore, for example, when the electronic element is a temperature-sensitive element, it is possible to further reduce the thickness while reducing the temperature difference between the temperature of the vibrating reed and the temperature detected by the temperature-sensitive element.

[Application Example 4] In the vibrating device according to the application example described above, one of the electrode terminals includes a protrusion having a larger area than the other electrode terminals in plan view, and the protrusion has a curved contour. preferably included.

According to this, in the vibrating device, one of the electrode terminals has a projecting portion having a larger area than the other electrode terminals in a plan view, and the outline of the projecting portion includes a curved line. In addition to the terminal identification function, this electrode terminal can be used as a starting point to easily bring out the self-alignment effect of the vibration device (autonomous position repair phenomenon during reflow mounting when mounting the vibration device to the external substrate via solder). be able to.

Application Example 5 In the vibration device according to the application example described above, it is preferable that the electronic element is a temperature-sensitive element.

According to this, since the electronic element is a temperature-sensitive element, the vibrating device can reduce the temperature difference between the temperature of the vibrating reed and the temperature detected by the temperature-sensitive element.

Application Example 6 In the vibration device according to the application example described above, it is preferable that the temperature sensing element is a thermistor or a semiconductor for temperature measurement.

According to this, since the temperature-sensitive element is the thermistor or the temperature-measuring semiconductor, the vibrating device can accurately detect the ambient temperature by the characteristics of the thermistor and the temperature-measuring semiconductor.

Application Example 7 An electronic apparatus according to this application example includes the vibration device according to any one of the application examples described above.

According to this, since the electronic device of this configuration includes the vibrating device according to any one of the above application examples, the effect described in any one of the above application examples can be obtained, and excellent performance can be achieved. It is possible to provide an electronic device that demonstrates.

Application Example 8 A moving body according to this application example includes the vibration device according to any one of the application examples described above.

According to this, since the moving body of this configuration includes the vibrating device according to any one of the application examples, the effects described in any one of the application examples are exhibited, and excellent performance is achieved. It is possible to provide a moving body that exhibits.

Application Example 9 A vibrating device according to this application example includes a vibrating reed, a temperature-sensitive element, and a container housing the vibrating reed and the temperature-sensitive element. A temperature difference dT from the temperature detected by the temperature element satisfies |dT|≦0.1 (° C.).

As a result, the vibrating device can reduce the temperature difference between the temperature of the vibrating reed and the temperature detected by the temperature sensing element.
Thereby, the vibrating device can obtain good frequency-temperature characteristics.

Application Example 10 In the vibrating device according to Application Example 9, it is preferable that the temperature-sensitive element is a thermistor or a temperature-measuring semiconductor.

According to this, since the temperature-sensitive element is the thermistor or the temperature-measuring semiconductor, the vibrating device can accurately detect the ambient temperature by the characteristics of the thermistor and the temperature-measuring semiconductor.

Application Example 11 An electronic apparatus according to this application example includes the vibrating device according to the application example 9 or 10 described above.

According to this, since the electronic apparatus of this configuration includes the vibrating device according to Application Example 9 or Application Example 10, the effect described in Application Example 9 or Application Example 10 is exhibited, and the electronic apparatus is excellent. It is possible to provide an electronic device that exhibits performance.

Application Example 12 A moving object according to this application example includes the vibrating device according to the application example 9 or 10 described above.

According to this, since the moving body of this configuration includes the vibrating device according to Application Example 9 or Application Example 10, the effect described in Application Example 9 or Application Example 10 can be obtained, and an excellent It is possible to provide a moving body that exhibits performance.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing the schematic configuration of the crystal oscillator of the first embodiment, where (a) is a plan view seen from the lid (lid body) side, and (b) is a cross-sectional view taken along line AA of (a). , (c) is a plan view seen from the bottom side. FIG. 2 is a circuit diagram related to driving a crystal oscillator including a temperature-sensitive element as an electronic element accommodated in the crystal oscillator of the first embodiment; 5 is a graph for explaining the relationship between the distance L1 and the temperature change followability of the thermistor when the temperature of the crystal vibrating piece changes. 5 is a graph for explaining the relationship between the distance L1 and the yield of temperature hysteresis of the crystal unit; 4 is a graph showing the temperature difference between the temperature detected by the thermistor and the temperature of the vibrating reed. FIG. 2 is a schematic diagram showing a schematic configuration of a crystal oscillator of a modified example of the first embodiment, (a) is a plan view seen from the lid side, (b) is a cross-sectional view along line AA of (a); (c) is a plan view seen from the bottom side. FIG. 4A is a schematic diagram showing a schematic configuration of a crystal resonator according to a second embodiment, where (a) is a plan view seen from the lid side, (b) is a cross-sectional view taken along line AA in (a), and (c). is a plan view seen from the bottom side. 1 is a schematic perspective view showing a mobile phone as an electronic device; FIG. FIG. 2 is a schematic perspective view showing an automobile as a moving object;

Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
First, a crystal resonator as an example of a vibrating device will be described.
FIG. 1 is a schematic diagram showing a schematic configuration of the crystal resonator of the first embodiment. FIG. 1(a) is a plan view seen from the lid (lid body) side, FIG. 1(b) is a sectional view taken along line AA in FIG. 1(a), and FIG. 1(c). is a plan view seen from the bottom side. Note that the lid is omitted in the following plan views, including FIG. 1(a), viewed from the lid side. Also, for the sake of clarity, the dimensional ratio of each component is different from the actual one.
FIG. 2 is a circuit diagram related to driving of a crystal oscillator including a temperature-sensitive element as an electronic element accommodated in the crystal oscillator of the first embodiment.

As shown in FIG. 1, the crystal resonator 1 accommodates a crystal resonator element 10 as a resonator element, a thermistor 20 as an example of a temperature sensing element as an electronic element, the crystal resonator element 10 and the thermistor 20 . and a package 30 containing

The crystal vibrating piece 10 is, for example, an AT-cut crystal substrate cut out from a raw crystal or the like at a predetermined angle. It integrally has a base portion 12 connected to the vibrating portion 11 .
The crystal vibrating piece 10 has lead electrodes 15 a and 16 a led out from substantially rectangular excitation electrodes 15 and 16 formed on one principal surface 13 and the other principal surface 14 of a vibrating portion 11 and formed on a base portion 12 . there is

The extraction electrodes 15 a are extracted from the excitation electrodes 15 on one main surface 13 to the base portion 12 along the longitudinal direction (horizontal direction of the paper surface) of the crystal vibrating piece 10 , and along the side surfaces of the base portion 12 to the other main surface 14 . It wraps around and extends to the other major surface 14 of the base 12 .
The extraction electrode 16 a is extracted from the excitation electrode 16 on the other main surface 14 to the base 12 along the longitudinal direction of the crystal vibrating piece 10 , wraps around the main surface 13 along the side surface of the base 12 , and extends to the main surface 13 of the base 12 . It extends to one main surface 13 .
The excitation electrodes 15 and 16 and the lead-out electrodes 15a and 16a are, for example, Cr (chromium) as a base layer, and Au (gold) or a metal containing Au as a main component is laminated thereon to form a metal coating. there is

The thermistor 20 is, for example, a chip-type (rectangular parallelepiped) temperature-sensitive element (temperature-sensitive resistance element) having electrodes 21 and 22 at both ends and having a large change in electrical resistance with respect to temperature change. is the body.
For the thermistor 20, for example, a thermistor called an NTC (Negative Temperature Coefficient) thermistor whose resistance decreases with temperature rise is used. An NTC thermistor is often used as a temperature sensor because the relationship between temperature and resistance is linear.
The thermistor 20 is accommodated in the package 30 and detects the temperature in the vicinity of the crystal vibrating piece 10 , thereby functioning as a temperature sensor to contribute to the correction of the frequency fluctuation accompanying the temperature change of the crystal vibrating piece 10 .

The package 30 includes a package base 31 as a substrate having a substantially rectangular planar shape and a substantially flat plate shape, and having a first main surface 33 and a second main surface 34 which are in a front-back relationship with each other. It has a flat plate-like lid 32 that covers the first main surface 33 side, and is configured in a substantially rectangular parallelepiped shape.
The package base 31 has a flat plate-like first layer 31a with one surface serving as the first main surface 33, and an opening in the center. A second layer 31b having a second main surface 34 on the side opposite to the laminated surface, and a frame-shaped third layer 31c laminated on the first main surface 33 side of the first layer 31a. I have.
For the first layer 31a and the second layer 31b of the package base 31, an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide based ceramic green sheet are formed, laminated, and fired. Ceramic-based insulating materials such as sintered bodies and glass-ceramics sintered bodies, or quartz, glass, silicon (high resistance silicon), and the like are used.
The third layer 31c of the package base 31 and the lid 32 are made of the same material as the package base 31 or metal such as Kovar and 42 alloy.

Internal terminals 33 a and 33 b are provided on the first main surface 33 of the package base 31 at positions facing the extraction electrodes 15 a and 16 a of the crystal vibrating piece 10 .
In the crystal vibrating piece 10, the extraction electrodes 15a and 16a are joined to the internal terminals 33a and 33b via a conductive adhesive 40 such as an epoxy, silicone, or polyimide mixed with a conductive substance such as a metal filler. It is As a result, the crystal vibrating piece 10 is mounted on the first main surface 33 side.

In the crystal oscillator 1, the third layer 31c of the package base 31 is covered with the lid 32 while the crystal resonator element 10 is joined to the internal terminals 33a and 33b of the package base 31. The internal space S including the first layer 31a, the third layer 31c, and the lid 32 of the package base 31 is airtightly sealed by seam welding, low-melting glass, adhesive, or other bonding material. is stopped.
FIG. 1 shows, as an example, a configuration in which the metallic third layer 31c and the metallic lid 32 are joined by seam welding. In this case, the third layer 31c is brazed to the metallized layer (not shown) of the first layer 31a.
The airtightly sealed internal space S of the package 30 is in a decompressed vacuum state (high vacuum state) or filled with an inert gas such as nitrogen, helium, or argon.

A concave portion 35 is provided on the second main surface 34 side of the package base 31 by the opening of the second layer 31b and the laminated surface of the first layer 31a. The planar shape of the concave portion 35 is, for example, a track shape.
Electrode pads 36 a and 36 b are provided on the bottom surface 36 of the recess 35 (the surface on which the first layer 31 a is laminated) at positions facing the electrodes 21 and 22 of the thermistor 20 .
The thermistor 20 has electrodes 21 and 22 joined to electrode pads 36a and 36b via a joining member 41 such as a conductive adhesive or solder. As a result, the thermistor 20 is accommodated within the recess 35 .
The thermistor 20 is arranged substantially in the center of the concave portion 35 so that the longitudinal direction (the direction connecting the electrodes 21 and 22) is along the longitudinal direction of the package base 31 (horizontal direction of the drawing).

Electrode terminals 37a, 37b, 37c, and 37d are provided at the four corners of the second main surface 34 of the package base 31, respectively.
Among the four electrode terminals 37a to 37d, for example, two electrode terminals 37b and 37d located diagonally on one side are connected to internal terminals 33a and 33b connected to lead electrodes 15a and 16a of the crystal vibrating piece 10, and the other The remaining two electrode terminals 37 a and 37 c located diagonally from the are connected to electrode pads 36 a and 36 b connected to the electrodes 21 and 22 of the thermistor 20 .

The four electrode terminals 37a to 37d are formed to have a shape in which a part on the recess 35 side is notched from a rectangular planar shape. The electrode terminal 37c has a projecting portion 38 extending toward the electrode terminal 37b so as to have a larger area than the other electrode terminals 37a, 37b, and 37d in a plan view. formed (in other words, the profile of the protrusion 38 includes a curve).

When the lid 32 and the third layer 31c of the package base 31 are made of metal, the electrode terminals 37c connect the first layer 31a and the second layer 31b of the package base 31, respectively, as indicated by broken lines in FIG. 1(b). It is formed in a penetrating conductive via (a conductive electrode in which a through hole is filled with a metal or a conductive material) and internal wiring, or a castellation (recess) (not shown) provided at the outer corner of the package base 31 . From the viewpoint of improving the shielding property, it is preferable that the lid 32 is electrically connected to the lid 32 via the third layer 31c by any one of the conductive films. Incidentally, when the third layer 31c is made of an insulating material, the conductive vias are also provided in the third layer 31c.
Further, the crystal oscillator 1 can further improve the shielding property by grounding the electrode terminal 37c as a ground terminal (GND terminal).

The internal terminals 33a and 33b, the electrode pads 36a and 36b, and the electrode terminals 37a to 37d are formed by plating a metallized layer of W (tungsten), Mo (molybdenum), or the like with a film of Ni (nickel), Au, or the like. It consists of a metal coating laminated by

The crystal oscillator 1 is mounted in a first direction (thickness direction of the package base 31) perpendicular to the first main surface 33 from the mounting surface (mounting surface to an external member) of the electrode terminals 37a to 37d to the thermistor 20. The distance L1 is defined as 0.05 mm or more.
Further, in the crystal oscillator 1, the distance L2 in the first direction from the mounting surface of the electrode terminals 37a to 37d to the bottom surface 36 of the recess 35 is specified to be less than 0.3 mm.

As an example, the crystal oscillator 1 uses a material with a thickness of 0.25 mm±0.01 mm (0.24 mm or more and 0.26 mm or less) for the second layer 31b of the package base 31, and the thickness of the electrode terminals 37a to 37d is is 0.02 mm±0.01 mm (0.01 mm or more and 0.03 mm or less), the thickness of the electrode pads 36a and 36b is 0.02 mm±0.01 mm (0.01 mm or more and 0.03 mm or less), the thickness of the joining member 41 is The thickness is controlled at 0.01 mm ± 0.005 mm (0.005 mm or more and 0.015 mm or less), and the thermistor 20 is a thin product with a thickness of 0.12 mm ± 0.015 mm (0.105 mm or more and 0.135 mm or less). is used.
As a result, the crystal oscillator 1 has a distance L1 of 0.12 mm ± 0.05 mm (0.07 mm or more and 0.17 mm or less), and the minimum is 0.07 mm. will fulfill.
In addition, the crystal oscillator 1 has a distance L2 of 0.27 mm ± 0.02 mm (0.25 mm or more and 0.29 mm or less), and since the maximum is 0.29 mm, it sufficiently satisfies the regulation of less than 0.3 mm. It will be.
From these facts, it can be said that the crystal unit 1 satisfies the requirements of the distance L1 and the distance L2 even when tolerances (variations) are taken into consideration, and can be sufficiently mass-produced.

In addition, the crystal resonator 1 passes through the center of the thermistor 20 in the first direction and extends along the first main surface 33 along the first imaginary center line O1, and the center of the crystal resonator element 10 in the first direction. A distance L3 in the first direction from the second imaginary center line O2 extending along the first main surface 33 is within the range of 0.18 mm or more and 0.32 mm or less.

As an example, the crystal oscillator 1 uses a material with a thickness of 0.09 mm to 0.11 mm for the first layer 31a of the package base 31, and the thickness of the internal terminals 33a and 33b is 0.003 mm to 0.013 mm. The thickness of the conductive adhesive 40 is 0.01 mm to 0.03 mm, the thickness of the crystal vibrating piece 10 (assuming the resonance frequency range is about 19 to 52 MHz) is 0.032 mm to 0.087 mm, and the electrode pads 36a and 36b. The thickness of the thermistor 20 is controlled within the range of 0.01 mm to 0.03 mm, the thickness of the joint member 41 is controlled within the range of 0.005 mm to 0.015 mm, and the thickness of the thermistor 20 is controlled within the range of 0.105 mm to 0.135 mm. I use the thin product that is used.
As a result, the distance L3 of the crystal oscillator 1 is in the range of 0.187 mm to 0.309 mm, so that the stipulation of 0.18 mm or more and 0.32 mm or less is sufficiently satisfied. It can be said that it has cleared the regulations and is sufficiently mass-produced.
In addition, when the crystal vibrating piece 10 is inclined (it approaches the first main surface 33 as it goes from the base 12 to the tip on the opposite side), the distance L3 is the position in the left-right direction of the paper surface in FIG. b) is the distance between the first imaginary center line O1 and the second imaginary center line O2 within the range of the internal terminal 33a (33b).

As shown in FIG. 2, the crystal oscillator 1 is caused to oscillate by a drive signal applied via electrode terminals 37b and 37d from, for example, an oscillation circuit 61 integrated in an IC chip 70 of an electronic device. The piece 10 is excited by thickness-shear vibration, resonates (oscillates) at a predetermined frequency, and outputs a resonance signal (oscillation signal) from the electrode terminals 37b and 37d.
At this time, the thermistor 20 of the crystal oscillator 1 detects the temperature near the crystal vibrating piece 10 as a temperature sensor, converts it into a change in the voltage value supplied from the power supply 62, and outputs it as a detection signal from the electrode terminal 37a. Output.

The output detection signal is, for example, A/D converted by an A/D conversion circuit 63 integrated in the IC chip 70 of the electronic device, and input to a temperature compensation circuit 64 also integrated in the IC chip 70. be done. Then, the temperature compensation circuit 64 outputs a correction signal based on the temperature compensation data to the oscillation circuit 61 according to the input detection signal.
The oscillation circuit 61 applies a drive signal corrected based on the input correction signal to the crystal vibrating piece 10, and corrects the resonance frequency of the crystal vibrating piece 10, which fluctuates with temperature changes, to a predetermined frequency. do. The oscillation circuit 61 amplifies the oscillation signal of this corrected frequency and outputs it to the outside.

As described above, in the crystal resonator 1 of the first embodiment, the distance L1 in the first direction from the mounting surface of the electrode terminals 37a to 37d to the thermistor 20 is 0.05 mm or more.
As described above, the crystal unit 1 uses a thin thermistor 20, for example, so that the distance L1 from the mounting surface of the electrode terminals 37a to 37d to the thermistor 20 is 0.05 mm or more, thereby making it suitable for use in electronic devices and the like. When mounted on an external member, the flow of the air inside the recess 35 is promoted, and the delay in the temperature drop of the thermistor 20 caused by the retention of the air inside the recess 35 can be reduced.

Here, the above contents will be described in detail.
FIG. 3 is a graph for explaining the relationship between the distance L1 and the followability of the temperature change of the thermistor when the temperature of the crystal vibrating piece changes. FIG. It is a graph explaining a relationship. The graph of FIG. 3 is based on analysis results obtained by the inventor's simulations and experiments.
The horizontal axis of FIG. 3 represents elapsed time, and the vertical axis represents temperature. The horizontal axis of FIG. 4 represents the distance L1, and the vertical axis represents the yield of temperature hysteresis of the crystal oscillator.

As shown in FIG. 3, when the distance L1 from the mounting surface of the electrode terminals 37a to 37d to the thermistor 20 is 0.05 mm, the temperature change detected by the thermistor 20 is When the temperature rises and when the temperature falls, it follows almost without delay. That is, when the distance L1 is 0.05 mm, there is almost no temperature difference between the temperature of the crystal vibrating piece 10 and the temperature detected by the thermistor 20 .
On the other hand, when the distance L1 is less than 0.05 mm, as the distance L1 becomes smaller to 0.04 mm and 0.03 mm, the temperature change detected by the thermistor 20 when the temperature of the crystal vibrating piece 10 drops A delay occurs in (temperature drop), and the temperature difference between the temperature of the crystal vibrating piece 10 and the temperature detected by the thermistor 20 increases.
This is presumably because the air stays in the recess 35 due to the reduction in the distance L1, and the heat insulating effect of the air warmed when the temperature rises inhibits the temperature drop of the thermistor 20. FIG.

As a result, as shown in FIG. 4, when the distance L1 is 0.05 mm or more, the yield of the temperature hysteresis of the crystal unit 1 (difference between the frequency shift when the temperature rises and the frequency shift when the temperature drops) is 100%.
On the other hand, when the distance L1 is less than 0.05 mm, the yield of the temperature hysteresis of the crystal unit 1 does not reach 100%, and the yield decreases as the distance L1 becomes smaller to 0.04 mm and 0.03 mm.
From these results, the crystal resonator 1 can reduce the temperature difference between the temperature of the crystal resonator element 10 and the temperature detected by the thermistor 20 by setting the distance L1 to 0.05 mm or more.
Thereby, the crystal oscillator 1 can obtain good frequency-temperature characteristics.

Next, the inventor of the present application conducted a verification experiment on the followability of the temperature change of the thermistor 20 when the temperature of the crystal vibrating piece 10 changes, and the results will be described below.
According to the analysis results of FIGS. 3 and 4 described above, at the distance L1=0.05 mm where there was almost no temperature difference between the temperature of the crystal vibrating piece 10 and the temperature detected by the thermistor 20, the temperature of the crystal vibrating piece 10 was measured. An experiment was conducted on the followability of the temperature detected by the mister 20 .

The crystal resonator 1 according to the first embodiment is mounted on an external substrate, heat is applied to the external substrate, and the temperature detected by the thermistor 20 is compared with the temperature of the crystal resonator element 10 at that time. Evaluate how much the difference is.
First, the temperature of the external substrate was raised from 29.0°C to 32.0°C. At that time, the frequency of the crystal vibrating piece 10 was measured at each detection temperature from 29.5° C. to 31.5° C. detected by the thermistor 20 in steps of 0.1° C., and the thermistor 20 Based on the detected frequency of the crystal vibrating piece 10 at 29.5° C., the frequency deviation was determined.
Next, the temperature of the external substrate was lowered from 32.0°C to 29.0°C. At that time, the frequency of the crystal vibrating piece 10 was measured at each detection temperature from 31.5° C. to 29.5° C. detected by the thermistor 20 in steps of 0.1° C., and the thermistor 20 The frequency deviation was obtained with reference to the frequency of the crystal vibrating piece 10 at 29.5° C. detected during the temperature rise.
They are in Table 1 below.

Here, since the crystal vibrating piece 10 is an AT-cut crystal vibrating piece, its frequency-temperature characteristic exhibits a cubic curve. The inventor of the present application determined the temperature of the crystal vibrating piece 10 from the frequency deviation of the crystal vibrating piece 10 at each temperature detected by the thermistor 20 based on the data of the frequency-temperature characteristics of the crystal vibrating piece 10 measured in advance. Calculated.
They are in Table 2 below.

Next, from Table 2, the temperature difference between the temperature detected by the thermistor 20 and the temperature of the crystal vibrating piece 10 at each temperature detected by the thermistor 20 was calculated.
They are in Table 3 below.

FIG. 5 is a graph showing the temperature difference between the temperature detected by the thermistor and the temperature of the crystal vibrating piece, and is a graph of the calculation results in Table 3. In FIG. The horizontal axis represents the temperature (° C.) detected by the thermistor, and the vertical axis represents the temperature difference (° C.) between the temperature detected by the thermistor and the temperature of the crystal vibrating piece.
It was found that the temperature difference dT between the detected temperature of the thermistor 20 and the temperature of the crystal vibrating piece 10 is -0.07°C or more and 0.00°C or less. In other words, from this verification experiment, the followability of the temperature detected by the thermistor 20 to the temperature of the crystal vibrating piece 10 is as follows.
It has been found that if |dT|≦0.1 (° C.) is satisfied, it is possible to obtain a vibrating device (quartz oscillator 1) having good frequency-temperature characteristics.
Further, |dT|≦0.1 (° C.) as the temperature followability detected by the thermistor 20 is not limited to the schematic configuration of the crystal unit 1 of the first embodiment as shown in FIG. Instead, it can be applied to a vibrating device having a so-called single-seal type package in which a vibrating piece and a temperature-sensitive element are housed together in one housing.

Further, in the crystal oscillator 1, the distance L2 in the first direction from the mounting surface of the electrode terminals 37a to 37d to the bottom surface 36 of the recess 35 is less than 0.3 mm. It is possible to reduce the thickness while reducing the temperature difference from the temperature detected by 20 .
As a result, the crystal resonator 1 can be made thinner and have good frequency-temperature characteristics.

Further, in the crystal oscillator 1, the distance L3 in the first direction between the first imaginary center line O1 of the thermistor 20 and the second imaginary center line O2 of the crystal vibrating piece 10 is 0.18 mm or more and 0.32 mm or less. Since it is within the range, the temperature difference between the temperature of the crystal vibrating piece 10 and the temperature detected by the thermistor 20 can be reduced, and the thickness can be further reduced.
When the distance L3 is less than 0.18 mm, the thickness of the first layer 31a of the package base 31 is less than 0.09 mm (assuming that it is difficult to further reduce the thickness of the thermistor 20 for the time being). Also, the thickness of the package base 31 becomes thinner, and the strength of the package base 31 becomes a problem.
Further, when the distance L3 exceeds 0.32 mm, the temperature difference between the temperature of the crystal vibrating piece 10 and the temperature detected by the thermistor 20 increases, and the frequency-temperature characteristic deteriorates. There is a possibility that it will be difficult to deal with the high precision of 1.

Further, the crystal oscillator 1 has a projecting portion 38 so that the electrode terminal 37c of the four electrode terminals 37a to 37d has a larger area than the other electrode terminals 37a, 37b, and 37d in plan view. The tip of the portion 38 is formed in a substantially semicircular shape (in other words, the profile of the projecting portion 38 includes a curved line).
For this reason, in the crystal oscillator 1, the protruding portion 38 functions as an identification mark for the electrode terminal 37c, and the electrode terminal 37c having a large area serves as a base point, resulting in a self-alignment effect of the crystal oscillator 1 (a self-alignment effect of the crystal oscillator 1). (Autonomous position restoration phenomenon during reflow mounting) when attaching to an external substrate via solder can be easily derived.

In addition, since the electronic element of the crystal resonator 1 is a temperature-sensitive element, it is possible to reduce the temperature difference between the temperature of the crystal vibrating piece 10 and the temperature detected by the temperature-sensitive element and to reduce the thickness of the crystal oscillator 1 .

In addition, since the temperature sensing element of the crystal oscillator 1 is the thermistor 20, the temperature of the surroundings can be accurately detected by the characteristics of the thermistor 20. FIG. A temperature-measuring semiconductor may be used as the temperature-sensing element instead of the thermistor 20, and the ambient temperature can be accurately detected by the characteristics of the temperature-measuring semiconductor. Semiconductors for temperature measurement include diodes and transistors.
More specifically, in the case of a diode, using the forward characteristics of the diode, a constant current flows from the anode terminal to the cathode terminal of the diode, and the temperature is detected by measuring the forward voltage that changes with temperature. can do. In the case of a transistor, the temperature can be detected in the same manner as described above by short-circuiting the base and collector and making the collector and emitter function as a diode.
The crystal oscillator 1 can reduce superposition of noise by using a diode or a transistor as a temperature sensing element.

(Modification)
Next, a modified example of the first embodiment will be described.
FIG. 6 is a schematic diagram showing a schematic configuration of a crystal oscillator of a modification of the first embodiment. 6(a) is a plan view seen from the lid side, FIG. 6(b) is a cross-sectional view taken along line AA in FIG. 6(a), and FIG. 6(c) is a bottom view. 1 is a plan view seen from .
In addition, the same reference numerals are given to the common parts with the first embodiment, detailed explanation is omitted, and the explanation will focus on the parts different from the first embodiment.

As shown in FIG. 6, the crystal oscillator 2 of the modified example differs in the arrangement direction of the thermistor 20 from that of the first embodiment.
The crystal oscillator 2 is arranged so that the longitudinal direction of the thermistor 20 (the direction connecting the electrodes 21 and 22) intersects (here, perpendicularly to) the longitudinal direction of the package base 31 (horizontal direction on the paper surface). A thermistor 20 is arranged.

As a result, in addition to the effects of the first embodiment, the crystal oscillator 2 has a lower fixing strength (bonding strength) of the thermistor 20 due to warpage of the package base 31, which tends to warp in the longitudinal direction. Decrease can be reduced.
It should be noted that the configuration of the modification described above can also be applied to the following embodiments.

(Second embodiment)
Next, another configuration of the crystal oscillator as a vibrating device will be described.
FIG. 7 is a schematic diagram showing a schematic configuration of the crystal resonator of the second embodiment. 7(a) is a plan view seen from the lid side, FIG. 7(b) is a cross-sectional view taken along the line AA of FIG. 7(a), and FIG. 7(c) is a bottom side view. 1 is a plan view seen from .
In addition, the same reference numerals are given to the common parts with the first embodiment, detailed explanation is omitted, and the explanation will focus on the parts different from the first embodiment.

As shown in FIG. 7, the crystal resonator 3 of the second embodiment differs from that of the first embodiment in the configuration of the package base 31 and the lid 32 .
In the crystal oscillator 3, the third layer 31c of the package base 31 is removed, and a bonding member 39 for connecting with the lid 32 is arranged instead.
The lid 32 is made of metal such as Kovar or 42 alloy and is formed into a cap shape having a flange portion 32a around the entire periphery.
The crystal resonator 3 has an internal space S for accommodating the crystal resonator element 10 due to the swelling of the cap portion of the lid 32 .

The lid 32 has a flange portion 32a joined to the first main surface 33 of the package base 31 via a conductive joining member 39 such as a seam ring, brazing material, or conductive adhesive.
As a result, the lid 32 is electrically connected to the electrode terminal 37c through conductive vias, internal wiring, and the like in the package base 31, thereby exhibiting a shielding effect.
The lid 32 may be electrically connected to the electrode terminal 37c through a conductive film formed on a castellation (not shown) provided at the outer corner of the joint member 39 and the package base 31 .

As described above, since the third layer 31c of the package base 31 is removed from the crystal oscillator 3 of the second embodiment, the package base 31 is easier to manufacture than in the first embodiment.
Note that the lid 32 of the crystal oscillator 3 does not have to be electrically connected to the electrode terminals 37c as long as the shielding is not hindered. Accordingly, the joining member 39 may be an insulating one.

(Electronics)
Next, a mobile phone will be described as an example of an electronic device equipped with the vibration device described above.
FIG. 8 is a schematic perspective view showing a mobile phone as an electronic device.
A mobile phone 700 includes a crystal oscillator as the vibration device described in each of the above embodiments and modifications.
A mobile phone 700 shown in FIG. 8 uses the crystal oscillator (any one of 1 to 3) described above as a timing device such as a reference clock oscillation source, and further includes a liquid crystal display device 701, a plurality of operation buttons 702, and a receiver. It is configured with a mouth 703 and a mouthpiece 704 . The form of the mobile phone is not limited to the illustrated type, and may be a so-called smartphone type form.

Vibration devices such as the above-mentioned crystal oscillators are not limited to the above-mentioned mobile phones, but also electronic books, personal computers, televisions, digital still cameras, video cameras, video recorders, navigation devices, pagers, electronic notebooks, calculators, word processors, workstations. , videophones, POS terminals, game devices, medical devices (e.g., electronic thermometers, blood pressure gauges, blood glucose meters, electrocardiogram measuring devices, ultrasonic diagnostic devices, electronic endoscopes), fish finders, various measuring devices, instruments, flights It is possible to provide an electronic device that can be suitably used as a timing device for electronic devices including simulators, etc., and that exhibits the effects described in the above embodiments and modifications in any case, and exhibits excellent performance. can.

(moving body)
Next, an automobile will be described as an example of a moving body equipped with the vibration device described above.
FIG. 9 is a schematic perspective view showing an automobile as a moving object.
The automobile 800 includes a crystal oscillator as the vibration device described in each of the above embodiments and modifications.
The automobile 800 uses the above-described crystal oscillator (any one of 1 to 3), for example, various electronically controlled devices (for example, an electronically controlled fuel injection device, an electronically controlled ABS device, an electronically controlled constant It is used as a timing device such as a reference clock oscillation source for a speed running device, etc.
According to this, since the automobile 800 is provided with the above-described crystal oscillator, the effects described in the above-described embodiments and modifications can be exhibited, and excellent performance can be exhibited.

Oscillating devices such as the above-described crystal oscillators are not limited to the automobile 800, but are used for timing reference clock oscillation sources of moving bodies including self-propelled robots, self-propelled carrier equipment, trains, ships, airplanes, artificial satellites, and the like. It is possible to provide a moving body that can be suitably used as a device, and in which case, the effects described in the above embodiments and modified examples are exhibited, and that exhibits excellent performance.

The shape of the vibrating bar of the crystal oscillator is not limited to the flat plate type shown in the figure, but rather a type with a thick central portion and a thin peripheral portion (e.g., convex type, bevel type, or mesa type). A type with a thin portion and a thick peripheral portion (for example, an inverted mesa type) may be used, or a tuning fork shape may be used.

The material of the vibrating piece is not limited to crystal, but may be lithium tantalate (LiTaO ₃ ), lithium tetraborate (Li ₂ B ₄ O ₇ ), lithium niobate (LiNbO ₃ ), or zirconium titanate. A piezoelectric material such as lead acid (PZT), zinc oxide (ZnO), aluminum nitride (AlN), or a semiconductor such as silicon (Si) may be used.
Further, the driving method of the thickness-shear vibration may be electrostatic driving using Coulomb force instead of the piezoelectric effect of the piezoelectric body.

DESCRIPTION OF SYMBOLS 1, 2, 3... Crystal oscillator as a vibration device, 10... Crystal vibration piece as a vibration piece, 11... Vibration part, 12... Base part, 13... One main surface, 14... The other main surface, 15, 16 Excitation electrodes 15a, 16a Extraction electrodes 20 Thermistors as an example of temperature sensing elements as electronic elements 21, 22 Electrodes 30 Packages 31 Package bases as substrates 31a First layer , 31b... second layer, 31c... third layer, 32... lid, 32a... collar portion, 33... first main surface, 33a, 33b... internal terminal, 34... second main surface, 35... concave portion, 36... bottom surface , 36a, 36b... electrode pads, 37a, 37b, 37c, 37d... electrode terminals, 38... protrusions, 39... joining members, 40... conductive adhesives, 41... joining members, 61... oscillation circuits, 62... power supplies, 63...A/D conversion circuit 64...Temperature compensation circuit 70...IC chip 700...Mobile phone as an electronic device 701...Liquid crystal display device 702...Operation button 703...Earpiece 704...Mouthpiece 800... Automobile as a moving body, S... Interior space.

Claims (11)

a vibrating piece;
a thermistor with electrodes at both ends;
A first main surface and a second main surface which are made of a ceramic-based insulating material and are in a front-back relationship with each other, and
and an insulating substrate that has an opening on the second main surface side and is recessed toward the first main surface side, and is substantially rectangular in plan view ,
The vibrating reed is mounted on the first main surface side of the insulating substrate,
The recess has a bottom surface and a side surface connecting the opening and the bottom surface ,
A pair of electrode pads are provided on the bottom surface ,
The thermistor is spaced apart from the side surface in the concave portion , and in a plan view, one of the electrodes on both ends and one of the pair of electrode pads overlap each other, and the other of the electrodes on both ends overlaps the one of the pair of electrode pads. It is arranged so that the other of the pair of electrode pads overlaps,
The electrodes at both ends and the pair of electrode pads are joined via a joining member,
The bottom surface of the recess between the thermistor and the side surface in a second direction perpendicular to the first direction in which the pair of electrode pads are arranged in plan view, and the joining member on the surface of the thermistor The uncoated portion and the surface of the bonding member are exposed to the atmosphere in the recess ,
The insulating substrate is provided with electrode terminals connected to the vibrating reed or the thermistor at corners of the substantially rectangular shape in a plan view from the second main surface side ,
The distance from the mounting surface of the electrode terminal to the thermistor in a third direction orthogonal to the first main surface is 0.05 mm or more, and
a distance in the third direction from the mounting surface of the electrode terminal to the bottom surface of the recess is less than 0.3 mm;
The thickness of the center portion of the resonator element in the third direction in plan view is the same as that of the center portion in plan view.
A vibrating device characterized in that the thickness in the third direction is smaller than the thickness of the surrounding peripheral portion. In claim 1,
A first main surface passing through the center of the thermistor in the third direction and extending along the first main surface
The distance in the third direction between the virtual center line and the second virtual center line passing through the center of the vibrating bar in the third direction and extending along the first main surface is 0.18 mm or more and 0.32 mm.
A vibrating device characterized by being within the following range. In claim 1 or claim 2,
The insulating substrate includes a first substrate portion having the first main surface and the second main surface,
a frame-shaped second substrate portion which is disposed and forms a recess having the first main surface as a bottom surface;
a hole disposed on the second main surface side and forming the recess having the second main surface as a bottom surface;
a third substrate portion that
The first substrate portion, the second substrate portion, and the third substrate portion are made of a ceramic-based insulating material.
consists of
A vibrating device, wherein the vibrating reed is mounted in the recess. In any one of claims 1 to 3,
The first direction is along the long sides of the substantially rectangular shape,
The opening of the recess has a dimension in the first direction greater than a dimension in the second direction.
is large. In any one of claims 1 to 3,
The first direction is along the short sides of the substantially rectangular shape,
The opening of the recess has a dimension in the first direction greater than a dimension in the second direction.
is large. In any one of claims 1 to 5,
The electrode terminal includes a first electrode terminal and a second electrode arranged on one long side of the substantially rectangular shape.
a terminal, and a third electrode terminal and a fourth electrode terminal arranged on the other long side of the substantially rectangular shape.
Mi ,
The first electrode terminal has a protruding portion that protrudes toward the second electrode terminal in a plan view,
The distance between the first electrode terminal and the second electrode terminal is equal to the distance between the third electrode terminal and the fourth electrode terminal.
A vibrating device characterized by being shorter than the distance between the pole terminals. In claim 6,
A vibrating device, wherein a contour of the protrusion includes a curved line. In any one of claims 1 to 7 ,
When the temperature of the external substrate to which the electrode terminals are attached is 29.0° C. or higher and 32.0° C. or lower,
A temperature difference dT between the temperature of the vibrating piece and the temperature detected by the thermistor is
|dT|≦0.1 (° C.)
A vibrating device characterized by satisfying An electronic device comprising the vibration device according to any one of claims 1 to 8 . a vibration device according to any one of claims 1 to 8 ;
an oscillation circuit electrically connected to the vibrating bar;
and an A/D conversion circuit that A/D converts an output signal from the thermistor. A moving object comprising the vibration device according to any one of claims 1 to 8 .

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