JP7128715B2 - Semiconductor relay element and semiconductor relay module - Google Patents

Description

The present invention relates to a semiconductor relay element and a semiconductor relay module.

Mechanical relay switches used in motors and the like have not only problems such as surge noise due to chattering and deterioration of contacts, but also problems such as difficulty in miniaturization and cost reduction. For this reason, semiconductor relays that are electrically turned on and off in response to an input signal have attracted attention, and in recent years there has been an increasing demand for high voltage, low loss, etc., as well as power saving in automobile equipment and household equipment. .

A hybrid vehicle or an electric vehicle is equipped with an electric motor as a drive source that is driven by electric power from a battery. A capacitor and an inverter are connected in parallel to the main battery, and the electric motor is driven by power supplied from the inverter. be. When the vehicle decelerates, the regenerated current generated by the electric motor charges the main battery via the inverter. The functions required of the semiconductor relay as a relay unit are to turn on/off the current supplied from the main battery to the electric motor, and to turn on the regenerative current (reverse current) supplied from the electric motor to the main battery. / is a function to turn off. Therefore, the semiconductor relay must be able to turn on/off bidirectional current.

In recent power electronics, the development of power device technology has led to higher withstand voltages, such as power MOSFETs (oxide semiconductor field effect transistors), IGBTs (insulated gate bipolar transistors), and GaN, which is attracting attention as next-generation devices. (Gallium nitride), SiC (silicon carbide), and other high-speed power devices have been applied to semiconductor relays that have been developed.

For example, in Patent Literature 1, an output MOSFET is made of SiCMOS to increase the voltage. Patent Document 2 discloses a semiconductor relay provided with a bypass semiconductor element (diode) in parallel with an output SiCMOS or GaN-FEMT in order to suppress an increase in on-resistance. In Patent Document 3, a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected to each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a drain of the second compound semiconductor MOSFET are connected. and a second output terminal, an AC switch or solid state relay is disclosed, using compound semiconductor MOSFETs with a withstand voltage of 400V or more.

In Patent Document 4, a semiconductor relay capable of controlling signals of both positive and negative polarities is formed on the same substrate with a configuration in which the drains of two semiconductor switches are connected, and carriers are allowed to move inside the semiconductor element to reduce conduction loss. is reduced.

As a charging/discharging circuit for switching a semiconductor relay, for example, Patent Document 5 discloses a charging/discharging circuit composed of a depletion type MOSFET and an impedance element. By discharging the gate capacitance of the semiconductor switch through a semiconductor element that has a low impedance compared to the resistance, the time required for switching can be shortened.

JP-A-2007-135081 JP 2011-254013 A JP 2013-12981 A JP 2017-028213 A JP 2016-208235 A

However, semiconductor relays are required to be smaller and to perform high-speed switching at high voltage and high current.

Conventional semiconductor relays are power MOSFETs (oxide semiconductor field effect transistors), IGBTs (insulated gate bipolar transistors), GaN (gallium nitride), SiC (silicon・A semiconductor relay circuit was constructed by combining discrete elements of high-speed power devices such as carbide). For this reason, two high-speed power semiconductor switches for relays and a depletion-type semiconductor switch for charge/discharge circuits are mounted, and miniaturization of the circuit has been an issue.

An object of the present invention is to solve this problem and to provide a semiconductor relay element and a semiconductor relay module that can be miniaturized.

(1) In the semiconductor relay device of the present invention, the active region comprises a buffer layer formed on a substrate, an electron transit layer made of a nitride semiconductor laminated on the buffer layer, and an electron transit layer laminated on the electron transit layer. and an electron supply layer made of a nitride semiconductor having a bandgap larger than that of the nitride semiconductor forming the electron transit layer are stacked in order, and on the surface of the electron supply layer in the active region , a first drain electrode, a first gate electrode, a first source electrode, a second source electrode, a second gate electrode, and a second drain electrode are arranged in this order in a plane, and the first source electrode and the second source electrode are preferably shared by a common source electrode.

(2) In the semiconductor relay element of the present invention, it is preferable that the first gate electrode and the second gate electrode are connected by a gate wiring pattern surrounding the common source electrode.

(3) The semiconductor relay device of the present invention includes a main source electrode in an inactive region that does not include the electron transit layer and the electron supply layer, and the plurality of finger-shaped common electrodes extending from the main source electrode through the active region. a plurality of finger-shaped first gate electrodes and a plurality of finger-shaped second gate electrodes penetrating the active region are arranged on both sides of the plurality of common source electrodes; A plurality of common source electrodes are surrounded and connected in series by a gate wiring pattern in an inactive region, a main first drain electrode is provided in the inactive region, and extends from the main first drain electrode through the active region. a plurality of finger-shaped first drain electrodes; a main second drain electrode in the inactive region; and a plurality of finger-shaped second drain electrodes penetrating the active region from the main second drain electrode. and the main first drain electrode and the main second drain electrode are arranged on opposite sides of the main source electrode with the active region interposed therebetween, and form a plurality of finger-like electrodes. Preferably, the first drain electrodes and the plurality of finger-shaped second drain electrodes are alternately arranged between the plurality of first gate electrodes and the plurality of second gate electrodes.

(4) In the semiconductor relay device of the present invention, a main source electrode is provided in an inactive region that does not include the electron transit layer and the electron supply layer, and the plurality of finger-shaped common electrodes pierce the active region from the main source electrode. a source electrode, wherein the plurality of first gate electrodes and the plurality of second gate electrodes are arranged along the main source electrode and the finger-shaped common source electrode; A plurality of the first gate electrodes and the second gate electrodes surrounding the electrodes are connected in series in the inactive region, and the gate wiring patterns are connected in series to the common gate wiring pattern in a finger shape. the gate wiring pattern arranged in parallel along the source electrode; a main first drain electrode in the inactive region; and a plurality of finger-like patterns penetrating the active region from the main first drain electrode. a main second drain electrode in the inactive region; and a plurality of finger-shaped second drain electrodes penetrating the active region from the main second drain electrode. and the main first drain electrode and the main second drain electrode are arranged on opposite sides of the active region to form the finger-like first drain electrode and the finger-like second drain electrode. It is preferable that the drain electrodes are alternately arranged between the plurality of finger-shaped first gate electrodes and the plurality of finger-shaped second gate electrodes.

(5) In the semiconductor relay device of the present invention, a main source electrode is provided in an inactive region that does not include the electron transit layer and the electron supply layer, and the plurality of finger-shaped common electrodes pierce the active region from the main source electrode. a plurality of finger-shaped first gate electrodes penetrating the active region and a plurality of finger-shaped second gate electrodes disposed on both sides of the common source electrode; a plurality of common source electrodes are surrounded by the gate wiring pattern and connected in series in the region; a main first drain electrode is provided in the inactive region; and fingers penetrating the active region from the main first drain electrode a main second drain electrode in the inactive region, and a plurality of finger-shaped second drains extending from the main second drain electrode through the active region; and the main first drain electrode is arranged on the opposite side of the main source electrode and the main second drain electrode with the active region interposed therebetween, and forms a plurality of finger-shaped first drains. Preferably, the electrodes and the plurality of finger-shaped second drain electrodes are alternately arranged between the plurality of finger-shaped first gate electrodes and the plurality of finger-shaped second gate electrodes.

(6) The semiconductor relay element of the present invention includes the main source electrode in the active region, and the common source electrode extends from the main source electrode through the active region, and is located on one side of the common source electrode. a plurality of finger-shaped first source electrodes extending from the main source electrode on one side thereof, and a plurality of finger-shaped second source electrodes extending from the main source electrode disposed on the other side of the common source electrode; the first gate electrode and the second gate electrode arranged on both sides of the common source electrode are electrically connected in an inactive layer region that does not include an electron transit layer and an electron supply layer; The first gate electrode arranged on one side of the electrodes is arranged along the main source electrode surrounding the plurality of finger-shaped first source electrodes, and the other side of the common source electrode. the second gate electrode is arranged along the main source electrode so as to surround the plurality of finger-like second source electrodes; comprising a first drain electrode, having a plurality of finger-shaped first drain electrodes extending from the main first drain electrode, the plurality of first drain electrodes being arranged along the first gate electrode; and a main second drain electrode on the side of the active region opposite to the main source electrode, a plurality of the second drain electrodes extending from the main second drain electrode in a finger shape, and a plurality of the second drains. An electrode is preferably arranged along the second gate electrode.

(7) The semiconductor relay element of the present invention includes the common source electrode that penetrates the active region and also serves as the main source electrode. the active region is provided with the finger-shaped second source electrode on the other side of the common source electrode; and the first gate electrode comprises the surrounding the first source electrode and arranged along the common source electrode; wherein the second gate electrode surrounds the second source electrode and arranged along the common source electrode; The first gate electrode and the second gate electrode are connected in series in an inactive region that does not include the electron transit layer and the electron supply layer; wherein the main first drain electrode and the two finger-shaped first drain electrodes surround the first gate electrode; and the active region the main second drain electrode and two finger-shaped second drain electrodes, wherein the main second drain electrode and the two finger-shaped second drain electrodes surround the second gate electrode; is preferably arranged.

(8) The semiconductor relay element of the present invention includes the common source electrode that penetrates the active region and also serves as the main source electrode. the active region includes a plurality of finger-shaped second source electrodes on the other side of the common source electrode; and a plurality of the second source electrodes. one gate electrode is arranged along the common source electrode surrounding the plurality of first source electrodes and connected in series; and the plurality of second gate electrodes surrounds the plurality of second source electrodes. The plurality of first gate electrodes and the plurality of second gate electrodes are arranged along the common source electrode and connected in series in an inactive region that does not include the electron transit layer and the electron supply layer. wherein the active region comprises a main first drain electrode and a plurality of finger-shaped first drain electrodes, wherein the main first drain electrode and the plurality of finger-shaped first drain electrodes are connected in series; and the active region includes the main second drain electrode and the plurality of finger-shaped second drain electrodes, and the main second drain electrode and the It is preferable that a plurality of finger-shaped second drain electrodes surround a plurality of the second gate electrodes.

(9) In the semiconductor relay element of the present invention, the electron transit layer made of a nitride semiconductor laminated on the buffer layer is made of GaN (gallium nitride), and formed on the electron transit layer. The electron supply layer is preferably made of Al _x Ga _1-x N (0.01≦x≦0.4) having a different bandgap energy from the GaN of the electron transit layer.

(10) A semiconductor relay element of the present invention is composed of a first GaN-HEMT composed of a first drain electrode, a first gate electrode and a common source electrode, and a second drain electrode, a second gate electrode and a common source electrode. It is preferable that the second GaN-HEMT is of the normally-off enhancement type.

(11) In the semiconductor relay element of the present invention, it is preferable that a protective film is further formed on the electron supply layer.

(12) A semiconductor relay element of the present invention comprises: a first active region including an electron transit layer and the electron supply layer; a second active region including the electron transit layer and the electron supply layer; a layer-free inactive region, wherein the first active region includes a first drain electrode, a first gate electrode, the first source electrode and the second source electrode on the electron supply layer. A common source electrode, a second gate electrode, and a second drain electrode that share the and the third source electrode are preferably arranged in this order.

(13) In the semiconductor relay element of the present invention, it is preferable that the first gate electrode, the second gate electrode and the third drain electrode are connected, and the common source electrode and the third source electrode are connected. .

(14) In the semiconductor relay element of the present invention, in the first active region, on the electron supply layer,
The plurality of finger-shaped common source electrodes penetrating the first active region from the main source electrode, the plurality of finger-shaped first gate electrodes penetrating the first active region and the plurality of finger-shaped gate electrodes are arranged on both sides of the plurality of common source electrodes and are connected in series in the inactive region by means of a gate wiring pattern surrounding the plurality of common source electrodes; a plurality of finger-like first drain electrodes extending from the main first drain electrode through the first active region; and a main second drain electrode in the first inactive region. a plurality of finger-shaped second drain electrodes penetrating the active region from the main second drain electrode; and the main first drain electrode and the main second drain electrode a plurality of finger-shaped first drain electrodes and a plurality of finger-shaped second drain electrodes arranged on opposite sides of the main source electrode across the active region; and the plurality of second gate electrodes.

(15) In the semiconductor relay element of the present invention, in the first active region, on the electron supply layer,
The common source electrode that also serves as the main source electrode is provided through the first active region, and the first active region has a plurality of finger-like first electrodes on one side of the common source electrode. A source electrode is provided, the first active region is provided with a plurality of finger-shaped second source electrodes on the other side of the common source electrode, and the plurality of first gate electrodes are: the plurality of first source electrodes are arranged along the common source electrode and connected in series; the plurality of second gate electrodes surround the plurality of second source electrodes and connect to the common source electrode and the plurality of first gate electrodes connected in series and the plurality of second gate electrodes connected in series are connected in series in the inactive region. The first active region is provided with a main first drain electrode and a plurality of finger-shaped first drain electrodes, and the main first drain electrode and the plurality of finger-shaped first drain electrodes form a plurality of the first drain electrodes. and a plurality of finger-shaped second drain electrodes are provided in the first active region, and the main second drain electrode and a plurality of finger-shaped second drain electrodes are provided in the first active region. It is preferable that the plurality of the second drain electrodes are arranged so as to surround the plurality of the second gate electrodes.

(16) The semiconductor relay element of the present invention comprises: a first semiconductor switch composed of the first drain electrode, the first gate electrode and the source electrode; and the second drain electrode, the second gate electrode and the source. The second semiconductor switch composed of electrodes is of a normally-off enhancement type, and the third semiconductor switch composed of the third drain electrode, the third gate electrode, and the third source electrode is , is preferably a depression type that is normally on.

(17) A semiconductor relay module of the present invention preferably includes the semiconductor relay element according to (1) above of the present invention, and a control circuit for controlling opening and closing of the semiconductor relay element.

(18) A semiconductor relay module of the present invention includes the semiconductor relay element according to (1) above of the present invention, a charge/discharge circuit for the semiconductor relay element, and an oscillation circuit for controlling opening and closing of the semiconductor relay element. It is preferable to have

(19) A semiconductor relay module of the present invention includes the semiconductor relay element according to (12) above of the present invention, a discrete element such as a resistor or a diode, and an oscillation circuit that controls opening and closing of the semiconductor relay element. preferably.

A first semiconductor switch and a second semiconductor switch are arranged in the first active region, and a third semiconductor switch is arranged in the second active region. The third semiconductor switch is used in a charging/discharging circuit for the signal applied to the gate electrode of the semiconductor relay, and is present within the same chip as the semiconductor relay element.

(1) The basic unit of the semiconductor relay element of the present invention comprises a buffer layer formed on a substrate, an electron transit layer made of a nitride semiconductor laminated on the buffer layer, and laminated on the electron transit layer. an electron supply layer made of a nitride semiconductor having a bandgap larger than that of the nitride semiconductor forming the electron transit layer; and a first drain electrode and a first gate on the electron supply layer of the active region. an electrode, a first source electrode, a second source electrode, a second gate electrode, and a second drain electrode are arranged in this order; the first source electrode and the second source electrode are a common source electrode; shared.

Carriers in the first semiconductor switch region and the second semiconductor switch region of the semiconductor relay can mutually move inside the semiconductor element, and the conduction loss can be reduced compared to the case where the semiconductor switches of individual chips are connected in series. Furthermore, two semiconductor switches can be formed in the same active region by anti-serial connection, and miniaturization can be achieved.

According to the semiconductor relay element of the present invention, the first semiconductor switch region and the second semiconductor switch region are formed adjacent to each other on the same substrate. The on-threshold distribution of the regions becomes similar values, and stable driving becomes possible.

(2) In the semiconductor relay element of the present invention, the first gate electrode and the second gate electrode are shared, and are electrically connected by a gate wiring pattern surrounding the shared common source electrode. Therefore, the first gate electrode and the second gate electrode can be easily and reliably set to the same potential, and the circuit can be miniaturized because there is no need to connect the gates externally.

(3) The semiconductor relay element of the present invention comprises an active region including an electron transport layer and an electron supply layer, a plurality of common source electrodes, and a gate wiring pattern surrounding the plurality of common source electrodes, which are connected in series to form a first gate. In this structure, an electrode and a second gate electrode are formed, and the first drain electrode and the second drain electrode are alternately arranged between the first gate electrode and the second gate electrode. The main first drain and the main second electrode are arranged on the opposite side of the main source electrode with the active region interposed therebetween. This is a structure in which a plurality of basic units of a semiconductor relay are arranged in parallel and integrated.

According to the semiconductor relay element of the present invention, the crossing of the electrode patterns should be minimized because it is necessary to avoid the crossing by wiring one wiring to another layer through a via hole or the like. , the intersecting electrodes can be limited to only the main first drain electrode and the plurality of second drain electrodes.

(4) In the semiconductor relay element of the present invention, a plurality of common source electrodes and gate wiring patterns surrounding the common source electrodes are connected in series and in parallel in an active region including an electron transit layer and an electron supply layer. It has a structure in which a first gate electrode and a second gate electrode are formed, and the first drain electrode and the second drain electrode are alternately arranged between the first gate electrode and the second gate electrode. The main second drain electrode is arranged opposite to the main source electrode and the main first drain with the active region interposed therebetween. Therefore, by arranging this electrode pattern, it is possible to limit the intersections of the electrodes to only the first drain electrode and the main source electrode.

(5) In the semiconductor relay element of the present invention, a plurality of common source electrodes and a gate wiring pattern surrounding the common source electrodes are connected in series to the active region including the electron transit layer and the electron supply layer to form the first gate electrode. In this structure, a second gate electrode is formed, and the first drain electrode and the second drain electrode are alternately arranged between the first gate electrode and the second gate electrode. The main first drain electrode is arranged on the opposite side of the main source electrode and the main second drain electrode with the active region interposed therebetween. They are alternately arranged between the first gate electrode and the finger-shaped second gate electrode.

In this electrode pattern arrangement, the second drain electrode intersects two wirings of the main source electrode and the gate wiring pattern. In this case, it is possible to form a structure in which the two wirings of the main source electrode and the gate wiring pattern are straddled over to another layer and connected through a via hole.

(6) In the semiconductor relay element of the present invention, the active region is provided with a main source electrode, the common source electrode is arranged from the main source electrode through the active region, and the main source electrode is arranged on one side of the common source electrode. A plurality of finger-shaped first source electrodes are arranged, and a plurality of finger-shaped second source electrodes are arranged from the main source electrode on the other side of the common source electrode. A first gate electrode and a second gate electrode arranged on both sides of the common source electrode are electrically connected in an inactive layer region. A first gate electrode arranged on one side of the common source electrode is arranged along the main source electrode so as to surround the plurality of finger-shaped first source electrodes, and a first gate electrode arranged on the other side of the common source electrode is arranged along the main source electrode. The two gate electrodes are arranged along the main source electrode surrounding the plurality of finger-like second source electrodes.

With this electrode pattern arrangement, the first drain electrode and the second drain electrode can be laterally separated with the common source electrode interposed therebetween, and the electrode patterns can be planarly arranged without intersecting each other.

(7) The semiconductor relay element of the present invention has a common source electrode that penetrates the active region and also serves as a main source electrode. The active region includes a finger-like first source electrode on one side of the common source electrode and a finger-like second source electrode on the other side of the common source electrode. A first gate electrode is arranged along the common source electrode around the first source electrode, and a second gate electrode is arranged along the common source electrode around the second source electrode.

With this electrode pattern arrangement, the first drain electrode and the second drain electrode can be separated in the vertical direction with the common source electrode interposed therebetween, and the respective electrode patterns can be planarly arranged without intersecting each other.

(8) The semiconductor relay element of the present invention has a common source electrode that penetrates the active region and also serves as a main source electrode. The active region includes a plurality of finger-shaped first source electrodes on one side of the common source electrode and a plurality of finger-shaped second source electrodes on the other side of the common source electrode. The first gate electrode is arranged along the common source electrode surrounding the first source electrode and connected in series, and the second gate electrode is arranged along the common source electrode surrounding the second source electrode and connected in series. , the first gate electrode and the first gate electrode are connected in series in the inactive region.

With this arrangement of the electrode patterns, the plurality of first drain electrodes and the second drain electrodes of the number of hooks can be vertically separated with the common source electrode interposed therebetween. can be placed in

(9) In the semiconductor relay element of the present invention, the electron transit layer made of a nitride semiconductor laminated on the buffer layer is made of GaN (gallium nitride), and the electron supply layer formed on the electron transit layer is made of GaN (gallium nitride). The layers are formed of Al _x Ga _1-x N (0.01≦x≦0.4) with different bandgap energies. This GaN-HEMT has a horizontal structure and is suitable for the semiconductor relay of the present invention.

(10) In the semiconductor relay element of the present invention, the first GaN-HEMT is composed of the first drain electrode, the first gate electrode, and the common source electrode, and the second drain electrode, the second gate electrode, and the common source electrode. The second GaN-HEMT is of an enhancement type which is normally off. When the potential between the gate and the source is set to 0, it becomes normally off, so it is suitable for a semiconductor switch.

(11) In the semiconductor relay element of the present invention, a protective film is further formed on the electron supply layer. A GaN-HEMT has a current collapse phenomenon in which it becomes high resistance (increase in R _on ) after applying a high bias due to impurity levels and interface levels on the semiconductor surface, or their level densities. The protective film can suppress reverse leakage current.

(12) A semiconductor relay element of the present invention includes a first active region including an electron transit layer and an electron supply layer, a second active region including an electron transit layer and an electron supply layer, and an electron transit layer and an electron supply layer. with no inactive regions. The first active region includes, on the electron supply layer, a first drain electrode, a first gate electrode, a common source electrode sharing the first source electrode and the second source electrode, a second gate electrode, a second A third drain electrode, a third gate electrode, and a third source electrode are sequentially arranged in the second active region on the electron supply layer.

A first semiconductor switch and a second semiconductor switch are arranged in the first active region, and a third semiconductor switch is arranged in the second active region. The third semiconductor switch is used in a charging/discharging circuit for the signal applied to the gate electrode of the semiconductor relay, and is present within the same chip as the semiconductor relay element. Therefore, the third semiconductor switch can be used as a semiconductor switch of a charging/discharging circuit for turning on/off the semiconductor relay, and further miniaturization can be realized.

(13) In the semiconductor relay element of the present invention, the third drain electrode of the third semiconductor switch is connected to the first gate electrode and the second gate electrode of the semiconductor relay, and the third source electrode of the third semiconductor switch is connected to A common source electrode and a third source electrode of the semiconductor relay are connected. When using the third semiconductor switch for a charge/discharge circuit, discrete elements such as resistors and diodes may be connected to the third gate electrode and the third source electrode. Therefore, the semiconductor relay element including the charging/discharging circuit can be further miniaturized.

(14) A semiconductor relay element of the present invention includes a first active region including an electron transit layer and an electron supply layer, and a second active region including an electron transit layer and an electron supply layer. A plurality of common source electrodes surrounded by the first gate electrode and the second gate electrode are present in the first active region, and the first drain electrode and the second drain electrode are provided between the first gate electrode and the second gate electrode. They are arranged alternately to form a plurality of semiconductor relays in the horizontal direction. A third semiconductor switch is formed in the second active region. Therefore, this third semiconductor switch can be used as a common charging/discharging circuit for a plurality of semiconductor relays.

(15) A semiconductor relay element of the present invention includes a first active region including an electron transit layer and an electron supply layer, and a second active region including an electron transit layer and an electron supply layer. The first active region has a plurality of first source electrodes on one side from the main source electrode and a plurality of second source electrodes on the other side. A plurality of first source electrodes are surrounded by a first gate electrode, a plurality of second source electrodes are surrounded by a second gate electrode, and a plurality of serially connected first gate electrodes are surrounded by a plurality of second source electrodes. The two gate electrodes are electrically connected in the inactive region. The first drain electrode is arranged between the main first drain electrode and the first gate electrode in a finger shape, the second drain electrode is arranged between the main second drain electrode and the second gate electrode in a finger shape, and a plurality of Vertically formed semiconductor relays are arranged.

A third semiconductor switch is formed in the second active region. Therefore, this third semiconductor switch can be used as a common charging/discharging circuit for a plurality of semiconductor relays. Furthermore, the electrodes connecting the semiconductor relay and the third semiconductor switch can be arranged in a plane without any intersection of the respective electrodes.

(16) In the semiconductor relay element of the present invention, the first semiconductor switch and the second semiconductor switch constituting the semiconductor relay are of an enhancement type in which they are normally off, and the third semiconductor switch is of a depression type in which they are normally on. be. For this reason, the semiconductor relay is turned on and off at positive potential and 0 potential between the gate and source, and the third semiconductor switch used in the charging/discharging circuit is turned on and off at 0 potential and negative potential.

(17) A semiconductor relay module of the present invention includes the semiconductor relay element according to (1) above of the present invention, and a control circuit for controlling opening and closing of the semiconductor relay element. Therefore, even in applications where a large current flows, reliable driving is possible, and the entire circuit can be downsized and simplified.

(18) A semiconductor relay module of the present invention includes the semiconductor relay element according to (1) above of the present invention, a charge/discharge circuit for the semiconductor relay element, and an oscillation circuit for controlling opening and closing of the semiconductor relay element. there is Therefore, even in applications where a large current flows, reliable driving is possible, and the entire circuit can be downsized and simplified.

(19) A semiconductor relay module of the present invention includes the semiconductor relay element according to (12) above of the present invention, a discrete element such as a resistor or a diode, and an oscillation circuit for controlling opening and closing of the semiconductor relay element.

A first semiconductor switch and a second semiconductor switch are arranged in the first active region, and a third semiconductor switch is arranged in the second active region. The third semiconductor switch is used in a charging/discharging circuit for the signal applied to the gate electrode of the semiconductor relay, and is present within the same chip as the semiconductor relay element. Therefore, even in applications where a large current flows, it is possible to drive the device in a small size without using an insulating transformer or the like, and the charging/discharging circuit can be made smaller, so that the entire circuit can be made smaller and simpler.

1 is a circuit diagram showing the configuration of a basic circuit of a semiconductor relay according to an embodiment of the invention; FIG. 1 is a schematic cross-sectional view of the basic structure of a GaN-HEMT; FIG. 1 is a schematic cross-sectional view showing a basic unit of a semiconductor relay element of the present invention realized by GaN-HEMT; FIG. FIG. 3 is a diagram showing a wiring pattern of the basic unit A of the semiconductor relay element of the present invention; FIG. 2 is a plan view of a semiconductor relay element in which a plurality of basic units A are arranged and connected in parallel; FIG. 10 is a plan view of a semiconductor relay element with another wiring pattern in which a plurality of basic units A are arranged and connected in parallel; FIG. 10 is a plan view of a semiconductor relay element with another wiring pattern in which a plurality of basic units A are arranged and connected in parallel; FIG. 10 is a diagram showing a comparative example in which serial connection is not used in wiring of a plurality of first gate electrodes and a plurality of second gate electrodes in a semiconductor relay element in which first drain electrodes and second drain electrodes are alternately arranged; . 4 is a plan view of a semiconductor relay element with a wiring pattern to which the basic unit A is applied; FIG. FIG. 2 is a plan view of a basic unit B of the semiconductor relay device of the present invention; 11 is a schematic cross-sectional view along lines X1-Y1, X2-Y2, and X3-Y3 of the basic unit B of the semiconductor relay element shown in FIG. 10; FIG. FIG. 4 is a plan view of a semiconductor relay element in which a plurality of basic units B are arranged and connected in parallel; FIG. 10 is a diagram showing an embodiment in which a plurality of two semiconductor switches are arranged in two divided active regions with the same electrode arrangement of the basic unit B of semiconductor relay elements arranged vertically. FIG. 4 is a diagram showing a circuit configuration of a semiconductor relay module A60 using semiconductor relay elements 62 of the present invention; FIG. 10 is a diagram showing the circuit configuration of another semiconductor relay module B65 using the semiconductor relay element 62 of the present invention; FIG. 11 is a circuit diagram when a semiconductor relay module B65 is used to open and close a DC power supply 72 to a load 70; FIG. 11 is a diagram illustrating an example of a charge/discharge circuit 66 of a semiconductor relay module B65; It is a diagram showing a circuit configuration of a semiconductor relay element in which a third semiconductor switch Q3 is added to a first semiconductor switch Q1 and a second semiconductor switch Q2 that constitute a semiconductor relay. FIG. 10 is a plan view showing a basic unit of a semiconductor relay device equipped with a third semiconductor switch; FIG. 10 is a diagram showing Example 1 by the basic unit C of the semiconductor relay element having the third semiconductor switch; FIG. 10 is a diagram showing Example 2 of a basic unit C of a semiconductor relay element having a third semiconductor switch; FIG. 10 is a diagram showing a semiconductor relay module C82 with a semiconductor relay element 80 mounted with a third semiconductor switch;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the constituent elements in this embodiment can be appropriately replaced with existing constituent elements or the like, and various variations of combining with other existing constituent elements are possible. Therefore, the description of this embodiment is not intended to limit the content of the invention described in the claims.

FIG. 1 is a circuit diagram showing the configuration of a basic circuit of a semiconductor relay according to an embodiment of the invention. A semiconductor relay is an anti-series circuit in which the sources of two semiconductor switches are connected to each other.

A first source S1 of the first semiconductor switch Q1 and a second source S2 of the second semiconductor switch Q2 are connected, and a first drain D1 of the first semiconductor switch Q1 and a second drain D2 of the second semiconductor switch Q2 are output terminals. It's becoming The output terminals are the first drain terminal 3 and the second drain terminal 4, and the anti-series circuit of the semiconductor switch Q1 and the semiconductor switch Q2 operates as a relay that electrically turns on and off current flowing in both directions.

A gate terminal 2 to which the first gate G1 of the first semiconductor switch Q1 and the second gate G2 of the second semiconductor switch Q2 are electrically connected, and the first source S1 and the second source S2 which are also electrically connected. A source terminal 1 from is an input terminal for a signal for controlling on/off of the output of the semiconductor relay.

A solid state relay is an anti-series circuit in which the sources of two solid state switches are connected together. Semiconductor relays that control signals of both positive and negative polarities use semiconductor switches that can handle high voltages, and the circuit configuration that connects the sources of the two semiconductor switches is integrated on the same substrate to reduce size. can be achieved.

Nitride semiconductors (group III nitride semiconductors) are wide bandgap semiconductors, and have a dielectric breakdown field strength ten times that of silicon and a bandgap three times that of silicon. It is In addition, the saturation drift velocity of electrons is higher than that of silicon-based semiconductors or gallium arsenide (GaAs)-based compound semiconductors. For this reason, high electron mobility can be obtained, and a high breakdown voltage is possible. Since a GaN-HEMT (High Electron Mobility Transistor), which is a nitride semiconductor, has a horizontal structure, the basic circuit of a semiconductor relay can be formed on the same chip. It is feasible.

FIG. 2 is a schematic cross-sectional view of the basic structure of a GaN-HEMT. The substrate 12 is made of SiC (silicon carbide), GaN (gallium nitride), Al ₂ O ₃ (sapphire), Si (silicon), or the like. The buffer layer 14 made of i-GaN is formed to lower the dislocation density of the electron transit layer 16 and improve the crystallinity. The buffer layer 14 is laminated with an electron transit layer 16 made of GaN and an electron supply layer 18 made of Al _x Ga _1-x N (0.01≦x≦0.4) (aluminum gallium nitride). , the surface of the electron supply layer 18 is provided with a protective film such as SiN (silicon nitride). The GaN-HEMT is a lateral structure transistor, in which the source electrode 22, the gate electrode 24 and the drain electrode are arranged side by side.

When a nitride semiconductor has the (0001) plane as its main surface, an electric charge is generated by spontaneous polarization and piezoelectric polarization at the hetero interface with gallium nitride (GaN) or the like. Due to these polarization effects, the sheet carrier concentration at the heterointerface becomes 1×10 ¹³ cm ⁻² or more even without doping. Therefore, a high electron mobility transistor can be realized by using a two-dimensional electron gas (2DEG) at the heterointerface. A two-dimensional electron gas is formed in the channel layer. A two-dimensional electron gas provides low on-resistance, fast switching speed, and bi-directional control of current.

A GaN-HEMT is structurally a depletion type normally-on operation that conducts without applying a voltage to the gate. However, by reducing the carrier concentration immediately below the gate and shifting the threshold voltage to the positive side, enhancement-type normally-off operation can be achieved. For example, there are recessed gates, p-GaN laminated structures, and the like.

FIG. 3 is a schematic cross-sectional view showing a basic unit of the semiconductor relay element of the present invention realized by GaN-HEMT. A buffer layer 14 formed on a substrate 12; an electron transit layer 16 made of a nitride semiconductor laminated on the buffer layer 14; and a nitride semiconductor laminated on the electron transit layer 16 to form the electron transit layer 16. An active region consisting of an electron supply layer 18 made of a nitride semiconductor having a bandgap larger than that of the active region is formed.

A first drain electrode 30, a first gate electrode 32, a first source electrode, a second source electrode, a second gate electrode 36, and a second drain electrode 38 are formed on the electron supply layer 18 in the active region. are arranged in order. The first source electrode and the second source electrode are shared by a common source electrode 34 . A protective film 20 is provided between each electrode.

A first semiconductor switch Q1 formed by a first drain electrode 30, a first gate electrode 32 and a common source electrode 34, and a second semiconductor formed by a common source electrode 34, a second gate electrode 36 and a second drain electrode 38. The switches Q2 are connected in series in reverse connection via a common source electrode 34. FIG. Furthermore, since carriers in the first semiconductor switch region and the second semiconductor switch region can move between the electron supply layer 18 and the electron transport layer 16 inside the semiconductor element, the semiconductor switches of individual chips are connected in series. , the conduction loss can be reduced. The gates of the first semiconductor switch Q1 and the second semiconductor switch Q2 are also electrically connected to each other, and the same signal is input between the source and the first semiconductor switch Q1 and the second semiconductor switch Q2. can be performed with the wiring pattern of the gate electrode.

<Basic unit A of semiconductor relay element>
FIG. 4 is a diagram showing the wiring pattern of the basic unit A of the semiconductor relay element of the present invention. 4(A) is a plan view, and FIG. 4(B) is an XY sectional view of FIG. 4(A). In FIG. 4A, an active region 48 indicated by broken lines is a region where the substrate 12, the buffer layer 14, the electron transit layer 16 and the electron supply layer 18 are laminated. The inactive region 50 can be formed of an ion-implanted layer formed by ion-implanting B, Fe, or the like to eliminate the channel. As a result, no step is formed at the boundary between the active region 48 and the inactive region 50, so that no step occurs in the wiring pattern to the electrode formed across the boundary. The wiring patterns to the respective electrodes are electrically insulated through different layers by via holes or the like at the crossing portions, but it is desirable that the wiring patterns do not cross each other as much as possible.

Common source electrode 34 is disposed through active region 48 . A first gate electrode 32 and a second gate electrode 36 are arranged in the vicinity of both sides of a common source electrode 34 and are connected by an inactive region 50 to form one continuous gate wiring pattern 40 . A first drain electrode 30 is further arranged on the first gate electrode 32 side, and a second drain electrode 38 is further arranged on the second gate electrode 36 side. This structure is the basic unit of a semiconductor relay element, and this basic unit is connected in parallel to reduce on-resistance and handle large currents.

For this purpose, the common source electrode 34 may be provided with a main source electrode 42 , the first drain electrode 30 with a main first drain electrode 44 , and the second drain electrode 38 with a main second drain electrode 46 . The common source electrode 34 or the main source electrode 42 is the source terminal 1, the gate wiring pattern 40 is the gate terminal 2, the first drain electrode 30 or the main first drain electrode 44 is the first drain terminal 3, the second drain electrode 38 or the main first drain electrode A second drain electrode 46 is connected to the second drain terminal 4 .

<Embodiment 1 by basic unit A>
FIG. 5 is a plan view of a semiconductor relay element in which a plurality of basic units A are arranged and connected in parallel.
A main source electrode 42 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like common source electrodes 34, 34-1 extending from the main source electrode 42 through an active region 48 indicated by broken lines. 34-2.

A plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 penetrating the active region 48 and a plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 form a plurality of common source electrodes 34. , 34-1 and 34-2, and are connected in series by gate wiring patterns 40 in an inactive region 50, surrounding a plurality of common source electrodes.

A main first drain electrode 44 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like first drain electrodes 30, 30-1 penetrating the active region 48 from the main first drain electrode 44. have. Further, the inactive region 50 is provided with a main second drain electrode 46 and has a plurality of finger-like second drain electrodes 38, 38-1 penetrating the active region 48 from the main second drain electrode 46. As shown in FIG.

The main first drain electrode 44 and the main second drain electrode 46 are arranged on opposite sides of the main source electrode 42 with the active region 48 interposed therebetween. The plurality of second drain electrodes 38, 38-1 are alternately arranged between the plurality of first gate electrodes 32, 32-1, 32-2 and the plurality of second gate electrodes 36, 36-136-2. are placed.

Due to the arrangement of this electrode pattern, the intersecting electrodes can be limited to only the main first drain electrode 44 and the plurality of second drain electrodes 38, 38-1. The main first drain electrode 44 and the plurality of second drain electrodes 38, 38-1 intersect. , can avoid crossing.

<Embodiment 2 with basic unit A>
FIG. 6 is a plan view of a semiconductor relay element with another wiring pattern in which a plurality of basic units A are arranged and connected in parallel.

A main source electrode 42 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like common source electrodes 34, 34-1 extending from the main source electrode 42 through an active region 48 indicated by broken lines. 34-2.

The plurality of first gate electrodes 32, 32-1, 32-2 and the plurality of second gate electrodes 36, 36-1, 36-2 are connected to the main source electrode 42 and the plurality of finger-like common source electrodes 34, 34-. 1, 34-2 and surrounding a plurality of finger-like common source electrodes 34, 34-1, 34-2 and a plurality of second gate electrodes 32, 32-1, 34-2. The gate electrodes 36, 36-1 and 36-2 form a portion of the gate wiring pattern 40 connected in series in the inactive region 50 and a plurality of common source electrodes in a finger shape from the gate wiring pattern 40 connected in series. It has gate wiring patterns 40 arranged in parallel along 34, 34-1 and 34-2.

A main first drain electrode 44 is provided in the inactive region 50, and a plurality of finger-like first drain electrodes 30, 30-1 extending from the main first drain electrode 44 through the active region 48 are provided. A main second drain electrode 46 is provided in the inactive region, and a plurality of finger-like second drain electrodes 38, 38-1 extending from the main second drain electrode 46 through the active region 48 are provided.

The main first drain electrode 44 and the main second drain electrode 46 are arranged opposite to each other with the active region 48 interposed therebetween. The drain electrodes 38, 38-1 are arranged between the plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 and the plurality of finger-shaped second gate electrodes 36, 36-1, 36-2. alternately arranged

Due to the arrangement of this electrode pattern, the intersection of electrodes can be limited to only the main source electrode 42 and the plurality of first drain electrodes 30, 30-1. The main source electrode 42 and the plurality of first drain electrodes 30, 30-1 intersect, but the intersecting portions are avoided by wiring the main source electrode 42 in different layers connected by via holes. be able to.

<Embodiment 3 by basic unit A>
FIG. 7 is a plan view of a semiconductor relay element with another wiring pattern in which a plurality of basic units A are arranged and connected in parallel.

A main source electrode 42 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like common source electrodes 34, 34-1 extending from the main source electrode 42 through an active region 48 indicated by broken lines. 34-2.

A plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 penetrating the active region 48 and a plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 form a plurality of common source electrodes 34. , 34-1 and 34-2, and are connected in series by gate wiring patterns 40 in an inactive region 50, surrounding a plurality of common source electrodes.

A main first drain electrode 44 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like first drain electrodes 30, 30-1 penetrating the active region 48 from the main first drain electrode 44. have. A main second drain electrode 46 is provided in the inactive region 50, and a plurality of finger-like second drain electrodes 38, 38-1 extending from the main second drain electrode 46 through the active region 48 are provided.

The main first drain electrode 44 is arranged on the opposite side of the main source electrode 42 and the main second drain electrode 46 with the active region 48 interposed therebetween, and is provided with a plurality of finger-like first drain electrodes 30, 30-1 and finger electrodes 30, 30-1. The plurality of finger-shaped second drain electrodes are alternately arranged between the plurality of finger-shaped first gate electrodes and the plurality of finger-shaped second gate electrodes 38, 38-1.

In the arrangement of this electrode pattern, the main source electrode 42 and the gate wiring pattern 40 cross the plurality of first drain electrodes 30, 30-1. In this case, crossing can be avoided by wiring the plurality of first drain electrodes 30, 30-1 across the main source electrode 42 and the gate wiring pattern 40 in different layers connected by via holes.

<Comparative Example with Example Using Basic Unit A>
FIG. 8 shows a comparative example of a semiconductor relay element in which first drain electrodes and second drain electrodes are alternately arranged, in which series connection is not used in wiring of a plurality of first gate electrodes and a plurality of second gate electrodes. FIG. 4 is a diagram showing;

A main source electrode 42 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like common source electrodes 34, 34-1 extending from the main source electrode 42 through an active region 48 indicated by broken lines. 34-2.

A plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 penetrating the active region 48 and a plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 form a plurality of common source electrodes 34. , 34-1 and 34-2. The plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 and the plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 are in a parallel relationship. It is connected to the wiring pattern 40 . There is no portion where the plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 and the plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 are connected in series.

A main first drain electrode 44 is provided in an inactive region 50 that does not include an electron transit layer and an electron supply layer, and a plurality of finger-like first drain electrodes 30, 30-1 penetrating the active region 48 from the main first drain electrode 44. have. Further, the inactive region 50 is provided with a main second drain electrode 46 and has a plurality of finger-like second drain electrodes 38, 38-1 penetrating the active region 48 from the main second drain electrode 46. As shown in FIG.

The main first drain electrode 44 and the main second drain electrode 46 are arranged on opposite sides of the main source electrode 42 with the active region 48 interposed therebetween. between the plurality of first gate electrodes 32, 32-1, 32-2 and the plurality of second gate electrodes 36, 36-1, 36-2, are arranged alternately.

In this electrode pattern as a comparative example, a plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 and a plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 are connected in series. Since there is no such portion, the intersections of the electrodes are the plurality of first drain electrodes 30, 30-1 and the main source electrode 42, and the gate wiring pattern and the plurality of second drain electrodes 38, 38-1. Therefore, the two wirings of the main source electrode 42 and the gate wiring pattern 40 must be wired in different layers by connecting via holes. According to the present invention, crossings can be reduced by the wiring pattern of the plurality of first gate electrodes and the plurality of second gate electrodes that are connected in series.

<Embodiment 4 applying the basic unit A>
FIG. 9 is a plan view of a semiconductor relay element with a wiring pattern to which the basic unit A is applied. The wiring pattern is such that the electrode patterns do not intersect.

A main source electrode 42 is provided in an active region 48 indicated by dashed lines, and a common source electrode 34 is disposed from the main source electrode 42 through the active region 48 and extends from the main source electrode 42 to one side of the common source electrode 34 . A plurality of finger-shaped first source electrodes 33, 33-1 are arranged, and a plurality of finger-shaped second source electrodes 35, 35-1 are arranged from the main source electrode 42 on the other side of the common source electrode 34. there is None of the first source electrodes 33 , 33 - 1 and the second source electrodes 35 , 35 - 1 penetrate the active region 48 .

The first gate electrode 32 and the second gate electrode 36 arranged on both sides of the common source electrode 34 are electrically connected in the inactive layer region 50 .

The first gate electrode 32 arranged on one side of the common source electrode 34 is connected in series to the first gate electrode 32-1 by the gate wiring pattern 40 to form a plurality of finger-like first source electrodes 33, 33-1. and along the main source electrode 42 . The second gate electrode 36 arranged on the other side of the common source electrode 34 is connected in series to the second gate electrode 36-1 by the gate wiring pattern 40, forming a plurality of finger-like second source electrodes 35, 35-1. , and is wired along the main source electrode 40 .

A main first drain electrode 44 is provided on the opposite side of the active region 48 from the main source electrode 42. The main first drain electrode 44 has a plurality of finger-like first drain electrodes 30, 30-1, 30-2. , a plurality of first drain electrodes 30, 30-1, 30-2 are arranged along the first gate electrodes 32, 32-1 and the first source electrodes 33, 33-1.

A main second drain electrode 46 is provided on the opposite side of the active region 48 from the main source electrode 42. The main second drain electrode 46 has a plurality of finger-like second drain electrodes 38, 38-1, 38-2. , a plurality of second drain electrodes 38, 38-1, 38-2 are arranged along the second gate electrodes 36, 36-1 and the second source electrodes 35, 35-1.

Since the electrode patterns are arranged such that the first drain electrode and the second drain electrode are separated in the horizontal direction with the common source electrode interposed therebetween, the electrode patterns can be arranged in a plane without intersecting each other.

<Basic unit B of semiconductor relay element>
FIG. 10 is a plan view of the basic unit B of the semiconductor relay device of the present invention. The basic unit A has a structure in which two semiconductor switches of a semiconductor relay are arranged horizontally, whereas the basic unit B of a semiconductor relay has a structure in which two semiconductor switches of a semiconductor relay are arranged vertically.

A common source electrode 34 also serving as a main source electrode is provided through an active region 48 indicated by a broken line. The active region 48 is provided with finger-like first source electrodes 33 on one side of the common source electrode 34 . The active region 48 is provided with a finger-like second source electrode 35 on the other side of the common source electrode 34 .

The first gate electrode 32 surrounds the first source electrode 33 and is arranged along the common source electrode 34 . A second gate electrode 36 surrounds the second source electrode 35 and is arranged along the common source electrode 34 . The first gate electrode 32 and the second gate electrode 36 are connected in series in an inactive region 50 that does not include an electron transport layer and an electron supply layer.

The active region 48 is provided with a main first drain electrode 44 and two finger-shaped first drain electrodes 30, 30-1. −1 are arranged surrounding the first gate electrode 32 . The active region 48 is provided with a main second drain electrode 46 and two finger-shaped second drain electrodes 38, 38-1. -1 are arranged surrounding the second gate electrode.

FIG. 11 is a schematic cross-sectional view taken along lines X1-Y1, X2-Y2, and X3-Y3 of the basic unit B of the semiconductor relay element shown in FIG. In FIG. 11, (A) shows the X1-Y1 cross section, (B) shows the X2-Y2 cross section, and (C) shows the X3-Y3 cross section. 3, on the electron supply layer 18 in the active region, a first drain electrode 30, a first gate electrode 32, and a common source electrode in which the first source electrode and the second source electrode are shared. 34, a second gate electrode 36, and a second drain electrode 38 are arranged in this order. That is, it can be seen that the semiconductor relay structure effectively utilizes the entire active region including each wiring pattern.

<Embodiment using basic unit B>
FIG. 12 is a plan view of a semiconductor relay device in which a plurality of basic units B are arranged and connected in parallel.

A common source electrode 34 also serving as a main source electrode is provided through an active region 48 indicated by a broken line. The active region 48 is provided with a plurality of finger-like first source electrodes 33-1, 33-2, 33-3, 33-4 on one side of the common source electrode . The active region 48 is provided with a plurality of finger-like second source electrodes 35-1, 35-2, 35-3, and 35-4 on the other side of the common source electrode .

A plurality of first gate electrodes 32-1, 32-2, 32-3 and 32-4 surround a plurality of first source electrodes 33-1, 33-2, 33-3 and 33-4 to form a common source electrode. 34 are connected in series. A plurality of second gate electrodes 36-1, 36-2, 36-3 and 36-4 surround a plurality of second source electrodes 35-1, 35-2, 35-3 and 35-4 to form a common source electrode. 34 and connected in series.

The plurality of first gate electrodes 32-1, 32-2, 32-3, 32-4 and the plurality of second gate electrodes 36-1, 36-2, 36-3, 36-4 are electron transport layers and electron transport layers. They are connected in series in an inactive region 50 that does not contain a supply layer.

The active region 48 is provided with a main first drain electrode 44 and a plurality of finger-like first drain electrodes 30-1, 30-2, 30-3, 30-4, and 30-5. A plurality of finger-like first drain electrodes 30-1, 30-2, 30-3, 30-4, and 30-5 form a plurality of first gate electrodes 32-1, 32-2, 32-3, and 32-4. are placed around the The active region 48 is provided with a main second drain electrode 46 and a plurality of finger-like second drain electrodes 38-1, 38-2, 38-3, 38-4, and 38-5. A plurality of finger-like second drain electrodes 38-1, 38-2, 38-3, 38-4 and 38-5 form a plurality of second gate electrodes 36-1, 36-2, 36-3 and 36-4. are placed around the

With this arrangement of the electrode patterns, the plurality of first drain electrodes and the plurality of second drain electrodes can be vertically separated with the common source electrode interposed therebetween. can be placed.

<Embodiment applying basic unit B>
FIG. 13 is a diagram showing an embodiment in which a plurality of two semiconductor switches are arranged in two divided active regions with the same electrode arrangement of the basic unit B of semiconductor relay elements arranged vertically. The electrode arrangement is the same as that shown in FIG. 12, but the sources of the two semiconductor switches are connected via a common source electrode. By dividing the active region into the first active region 48-1 and the second active region 48-2, the carriers in the first semiconductor switch region and the second semiconductor switch region of the semiconductor relay cannot mutually move inside the semiconductor element. . Therefore, compared with the case where the carriers in the first semiconductor switch region and the second semiconductor switch region of the semiconductor relay can mutually move inside the semiconductor element, the effect of reducing the conduction loss is small. However, the conduction loss can be reduced compared to the case where the semiconductor switches of individual chips are connected in series.

<Semiconductor relay module A>
FIG. 14 is a diagram showing the circuit configuration of a semiconductor relay module A60 using the semiconductor relay element 62 of the present invention.

A semiconductor relay module A60 is composed of a semiconductor relay element 62 and a control circuit 63 . The first drain terminal 3 and the second drain terminal 4 of the semiconductor relay element 62 are output terminals of the semiconductor relay module A60. The input to the load to be controlled is connected to the first drain terminal 3 and the second drain terminal 4 to switch the input to the load. The control circuit 63 controls conduction or opening of the semiconductor relay element 62 .

This control circuit 63 includes a drive bias signal supply that supplies a drive bias signal to the semiconductor relay element 62 . Furthermore, an input/output voltage detection section, a conduction current detection section, a semiconductor switch temperature detection section, and the like may be included.

<Semiconductor relay module B>
FIG. 15 is a diagram showing the circuit configuration of another semiconductor relay module B65 using the semiconductor relay element 62 of the present invention.

The semiconductor relay module B65 is composed of a semiconductor relay element 62, a charge/discharge circuit 66, and an oscillation circuit 68. As shown in FIG. Furthermore, an input/output voltage detection section, a conduction current detection section, a semiconductor switch temperature detection section, and the like may be included. The first drain terminal 3 and the second drain terminal 4 of the semiconductor relay element 62 are output terminals of the semiconductor relay module 60 . The input to the load to be controlled is connected to the first drain terminal 3 and the second drain terminal 4 to switch the input to the load.

The charging/discharging circuit 66 charges/discharges the gate capacitances of the first semiconductor switch Q1 and the second semiconductor switch Q2 in response to the drive signal from the oscillator circuit 68, thereby opening and closing the semiconductor relay. The oscillation circuit 68 controls the input signal applied to the input terminal 64 to open and close the semiconductor relay by using a photodiode array, an oscillation frequency generation circuit, a booster circuit, etc., and outputs a drive signal to the charge/discharge circuit 66 . .

The semiconductor relay module B65 can be reliably driven even in applications where a large current flows, and the entire circuit can be made smaller and simpler.

FIG. 16 is a circuit diagram for opening and closing the DC power supply 72 to the load 70 using the semiconductor relay module B65.

It is composed of a DC power supply 72, a load 70, and a semiconductor relay module B65. The oscillation circuit 68 of the semiconductor relay module B65 applies a positive drive voltage, which is higher than the voltage of the DC power supply 72 and is equal to or higher than the gate threshold voltage _Vth of the first semiconductor switch Q1 and the second semiconductor switch Q2, to the charge/discharge circuit. 66.

In the charging/discharging circuit 66, the semiconductor relay element 62 is opened/closed by charging/discharging the gate capacitances of the first semiconductor switch Q1 and the second semiconductor switch Q2 with the drive voltage to turn them ON/OFF. When the first semiconductor switch Q1 and the second semiconductor switch Q2 are turned on, power is supplied from the DC power supply 72 to the load 70 .

FIG. 17 is a diagram illustrating an example of the charge/discharge circuit 66 of the semiconductor relay module B65. The charging/discharging circuit 66 is composed of a normally-on depression type third semiconductor switch Q3 and a discrete element 73 such as a resistor or a diode. A third drain and a third gate of the third semiconductor switch Q3 are connected to the oscillation circuit 68. As shown in FIG. A discrete element 73 is connected to the third gate and third source of the third semiconductor switch Q3.

When the driving signal from the oscillation circuit 68 is applied to the third drain of the third semiconductor switch Q3 of the charging/discharging circuit 66, the third semiconductor switch Q3 of depletion type is in the ON state, and current flows through the third drain 73. , a potential difference is generated across the discrete element 73, and a negative voltage is applied to the third gate. This potential difference turns off the depletion-type third semiconductor switch Q3. When the output voltage of the charging/discharging circuit 66 applied to the first gate of the first semiconductor switch Q1 and the second gate of the second semiconductor switch Q2 becomes higher than the threshold voltage _Vth , the first semiconductor switch Q1 The second semiconductor switch Q2 is turned on, and the semiconductor relay is turned on.

On the other hand, when the drive signal from the oscillation circuit 68 is turned off, there is no drive signal from the oscillation circuit 68, and no potential difference occurs across the discrete element 73, so that the depletion-type third semiconductor switch Q3 is turned on. . As a result, the first gate and first source of the first semiconductor switch Q1 and the second gate and second source of the second semiconductor switch Q2 are short-circuited by the depression-type third semiconductor switch Q3, and the semiconductor relay element 62 is turned off.

The third semiconductor switch used in the charge/discharge circuit 66 is of the depletion type as described above. For this reason, a depletion-type GaN-HEMT with a high breakdown voltage is suitable. The basic structure of a GaN-HEMT is originally a depletion type, and is made into a normally-off enhancement type by applying various techniques to the gate electrode. Therefore, the third semiconductor switch Q3 used in the charge/discharge circuit 66 can be used without applying enhancement-type technology.

The semiconductor relay element 62 of the present invention uses a GaN-HEMT, and the third semiconductor switch Q3 can be easily mounted on the same chip, thereby further miniaturizing the semiconductor relay module.

<Basic Unit C of Semiconductor Relay Element Mounted with Third Semiconductor Switch>
FIG. 18 is a diagram showing the circuit configuration of a semiconductor relay element in which a third semiconductor switch Q3 is added to the first semiconductor switch Q1 and the second semiconductor switch Q2 that constitute a semiconductor relay. The third drain of the third semiconductor switch Q3 is connected to the first gate of the first semiconductor switch Q1 and the second gate of the second semiconductor switch Q2, and the first source of the first semiconductor switch Q1 and the second gate of the second semiconductor switch Q2 are connected. A third source of the third semiconductor switch Q3 is connected to the second source. A third gate of the third semiconductor switch Q3 is connected to the auxiliary gate terminal 5 and externally connected to an impedance element.

FIG. 19 is a plan view showing a basic unit of a semiconductor relay device equipped with a third semiconductor switch.

A first active region 48-1 including an electron transit layer and an electron supply layer, a second active region 48-2 including an electron transit layer and an electron supply layer, and an inactive region 50 not including an electron transit layer and an electron supply layer. and

The first active region 48-1 includes, on the electron supply layer, a first drain electrode 30, a first gate electrode 32, a common source electrode 34 sharing the first source electrode and the second source electrode, and a second A gate electrode 36 and a second drain electrode 38 are arranged in order.

In the second active region 48-2, a third drain electrode 74, a third gate electrode 76, and a third source electrode 78 are arranged in this order on the electron supply layer.

The first gate electrode 32 , the second gate electrode 36 and the third drain electrode 74 are connected, and the common source electrode 34 and the third source electrode 78 are connected by the main source electrode 42 .

The first active region 48-1 including the electron transit layer and the electron supply layer and the second active region 48-2 including the electron transit layer and the electron supply layer have the same laminated structure, forming a semiconductor relay. The first gate electrode 32 and the second gate electrode 36 of 48-1 are of the enhancement type, but the third gate electrode 76 of the second active region may be of the depletion type, so it is of the enhancement type. There is no need to apply a structure that

<Embodiment 1 by Basic Unit C of Semiconductor Relay Element Mounting Third Semiconductor Switch>
FIG. 20 is a diagram showing Example 1 by the basic unit C of the semiconductor relay element having the third semiconductor switch. A first active region 48-1 including an electron transit layer and an electron supply layer, a second active region 48-2 including an electron transit layer and an electron supply layer, and an inactive region 50 not including an electron transit layer and an electron supply layer. It has A semiconductor relay is formed in the first active region 48-1 by the first semiconductor switch Q1 and the second semiconductor switch Q2. A third semiconductor switch Q3 is formed in the second active region 48-2.

A main source electrode 42 is provided in the inactive region 50, and the main source electrode 42 is provided with a plurality of finger-like common source electrodes 34, 34-1, 34-2 penetrating the first active region 48-1.

A plurality of finger-shaped first gate electrodes 32, 32-1, 32-2 penetrating the first active region 48-1 and a plurality of finger-shaped second gate electrodes 36, 36-1, 36-2 They are arranged on both sides of the common source electrodes 34, 34-1, and 34-2, and are connected in series by the gate wiring pattern 40 in the inactive region 50 so as to surround the plurality of common source electrodes.

A main first drain electrode 44 is provided in the inactive region 50, and a plurality of finger-like first drain electrodes 30, 30-1 extending from the main first drain electrode 44 through the first active region 48-1 are provided. Further, the inactive region 50 is provided with a main second drain electrode 46 and a plurality of finger-like second drain electrodes 38, 38-1 extending from the main second drain electrode 46 through the first active region 48-1. It is

The main first drain electrode 44 and the main second drain electrode 46 are arranged on opposite sides of the main source electrode 42 with the first active region 48-1 interposed therebetween. -1 and a plurality of finger-like second drain electrodes 38, 38-1 are connected to a plurality of first gate electrodes 32, 32-1, 32-2 and a plurality of second gate electrodes 36, 36-1, 36-2. are alternately arranged between

A third drain electrode 74, a third gate electrode 76 and a third source electrode 78 are arranged in this order in the second active region 48-2.

The first gate electrodes 32, 32-1, 32-2, the second gate electrodes 36, 36-1, 36-2 and the third drain electrode 74 are connected, and the main source electrode 42 and the third source electrode 78 are connected. ing.

<Embodiment 2 by Basic Unit C of Semiconductor Relay Element Equipped with Third Semiconductor Switch>
FIG. 21 is a diagram showing a second embodiment of the basic unit C of the semiconductor relay element having the third semiconductor switch. The basic unit C includes a first active region 48-1 including an electron transit layer and an electron supply layer, a second active region 48-2 including an electron transit layer and an electron supply layer, and an electron transit layer and an electron supply layer. It has an inactive region 50 where no A semiconductor relay is formed in the first active region 48-1 by the first semiconductor switch Q1 and the second semiconductor switch Q2. A third semiconductor switch Q3 is formed in the second active region 48-2.

A common source electrode 34 that also serves as a main source electrode is provided through the first active region 48-1. The first active region 48-1 is provided with a plurality of finger-like first source electrodes 33-1, 33-2, 33-3, 33-4 on one side of the common source electrode . The active region 48 is provided with a plurality of finger-like second source electrodes 35-1, 35-2, 35-3, and 35-4 on the other side of the common source electrode .

A plurality of first gate electrodes 32-1, 32-2, 32-3 and 32-4 surround a plurality of first source electrodes 33-1, 33-2, 33-3 and 33-4 to form a common source electrode. 34 are connected in series. A plurality of second gate electrodes 36-1, 36-2, 36-3 and 36-4 surround a plurality of second source electrodes 35-1, 35-2, 35-3 and 35-4 to form a common source electrode. are arranged along and connected in series.

The plurality of first gate electrodes 32-1, 32-2, 32-3, 32-4 and the plurality of second gate electrodes 36-1, 36-2, 36-3, 36-4 are electron transport layers and electron transport layers. They are connected in series in an inactive region 50 that does not contain a supply layer.

A main first drain electrode 44 and a plurality of finger-like first drain electrodes 30-1, 30-2, 30-3, 30-4, and 30-5 are provided in the first active region 48-1. The drain electrode 44 and the finger-like first drain electrodes 30-1, 30-2, 30-3, 30-4, and 30-5 form a plurality of first gate electrodes 32-1, 32-2, and 32-3. , 32-4. The first active region 48-1 is provided with a main second drain electrode 46 and a plurality of finger-like second drain electrodes 38-1, 38-2, 38-3, 38-4, 38-5. The drain electrode 46 and the plurality of finger-like second drain electrodes 38-1, 38-2, 38-3, 38-4, 38-5 form a plurality of second gate electrodes 36-1, 36-2, 36-3. , 36-4.

A third drain electrode 74, a third gate electrode 76 and a third source electrode 78 are arranged in this order in the second active region 48-2.

The first gate electrodes 32, 32-1, 32-2, the second gate electrodes 36, 36-1, 36-2 and the third drain electrode 74 are connected, and the common source electrode 34 and the third source electrode 78 are connected. ing.

Due to this arrangement of the electrode patterns, the plurality of first drain electrodes and the plurality of second drain electrodes can be separated in the vertical direction with the common source electrode interposed therebetween, and the connection with the third semiconductor switch Q3 can also be made between the respective electrodes. Patterns can be laid out in a plane without crossing each other.

<Semiconductor relay module using a semiconductor relay element equipped with a third semiconductor switch>
FIG. 22 is a diagram showing a semiconductor relay module C82 with a semiconductor relay element 80 mounted with a third semiconductor switch. The semiconductor relay module C82 is composed of a semiconductor relay element 80 mounted with a third semiconductor switch, a discrete element 73 such as a resistor or a diode, and an oscillation circuit 68 . Since the third semiconductor switch Q3 of the charging/discharging circuit 66 indicated by the dashed line is integrated with the semiconductor relay element, the semiconductor module C82 can be made even smaller than the semiconductor module A60 and the semiconductor module B65.

The charging/discharging circuit 66 of the semiconductor relay can be developed into various circuit configurations using the third semiconductor switch Q3. For example, a current detection circuit or the like. For this reason, the third semiconductor switch Q3 is made to exist alone without being connected to the semiconductor relay element inside the semiconductor switch element, and the third drain electrode 74, the third gate electrode 76 and the third source electrode 78 are connected to the semiconductor switch element. It can also be connected to a terminal taken out of the device.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications and applications are possible without departing from the gist of the present invention.

Q1 First semiconductor switch Q2 Second semiconductor switch Q3 Third semiconductor switch S1 First source G1 First gate D1 First drain S2 Second source G2 Second gate D2 Second drain S3 Third source G3 Third gate D3 Third third Drain 1 Source terminal 2 Gate terminal 3 First drain terminal 4 Second drain terminal 5 Auxiliary gate terminal 10 GaN-HEMT structure 12 Substrate 14 Buffer layer 16 Electron transit layer 18 Electron supply layer 20 Protective film 22 Source electrode 24 Gate electrode 26 drain electrodes 30, 30-1, 30-2, 30-3, 30-4, 30-5 first drain electrodes 32, 32-1, 32-2, 32-3, 32-4 first gate electrodes 33, 33-1, 33-2, 33-3, 33-4 first source electrodes 34, 34-1, 34-2 common source electrodes 35, 35-1, 35-2, 35-3, 35-4 second source electrode 36, 36-1, 36-2, 36-3, 36-4 second gate electrode 38, 38-1, 38-2, 38-3, 38-4, 38-5 second drain electrode 40 gate Wiring pattern 42 Main source electrode 44 Main first drain electrode 46 Main second drain electrode 48 Active region 48-1 First active region 48-2 Second active region 50 Inactive region 60 Semiconductor relay module A
62 semiconductor relay element 63 control circuit 64 input terminal 65 semiconductor relay module B
66 charge/discharge circuit 68 oscillation circuit 70 load 72 DC power supply 73 discrete element 74 third drain electrode 76 third gate electrode 78 third source electrode
80 Semiconductor relay element equipped with a third semiconductor switch 82 Semiconductor relay module C

Claims (18)

The active region is
a buffer layer formed on a substrate;
an electron transit layer made of a nitride semiconductor laminated on the buffer layer;
an electron supply layer made of a nitride semiconductor having a bandgap larger than that of the nitride semiconductor forming the electron transit layer, which is laminated on the electron transit layer;
on the surface of the electron supply layer in the active region,
a first drain electrode;
a first gate electrode;
a first source electrode;
a second source electrode;
a second gate electrode;
a second drain electrode;
are arranged in order on a plane,
the first source electrode and the second source electrode are shared by a common source electrode ; and
the first gate electrode and the second gate electrode are connected by a gate wiring pattern surrounding the common source electrode;
A semiconductor relay element characterized by: A main source electrode is provided in an inactive region that does not include the electron transit layer and the electron supply layer, and a plurality of finger-shaped common source electrodes that penetrate the active region from the main source electrode;
A plurality of finger-shaped first gate electrodes and a plurality of finger-shaped second gate electrodes penetrating the active region are arranged on both sides of the plurality of common source electrodes, and a plurality of gate wiring patterns are formed in the inactive region. connected in series surrounding the common source electrode of
A main first drain electrode is provided in the inactive region, and a plurality of finger-like first drain electrodes extending from the main first drain electrode to the active region are provided;
A main second drain electrode is provided in the inactive region, and a plurality of finger-shaped second drain electrodes are provided penetrating the active region from the main second drain electrode;
The main first drain electrode and the main second drain electrode are arranged on opposite sides of the main source electrode with the active region interposed therebetween. the second drain electrodes are alternately arranged between the plurality of first gate electrodes and the plurality of second gate electrodes;
The semiconductor relay element according to claim 1 , characterized by: A main source electrode is provided in an inactive region that does not include the electron transit layer and the electron supply layer, and a plurality of finger-shaped common source electrodes that penetrate the active region from the main source electrode;
A plurality of the first gate electrodes and a plurality of the second gate electrodes are arranged along the main source electrode and the finger-shaped common source electrode, and a plurality of the first gates surrounding the finger-shaped common source electrode. The electrode and the second gate electrode are arranged in parallel along the common source electrode in a finger shape from the gate wiring pattern portion connected in series in the inactive region and from the gate wiring pattern connected in series. and the gate wiring pattern,
A main first drain electrode is provided in the inactive region, and a plurality of finger-like first drain electrodes extending from the main first drain electrode through the active region are provided;
A main second drain electrode is provided in the inactive region, and a plurality of finger-shaped second drain electrodes are provided penetrating the active region from the main second drain electrode;
The main first drain electrode and the main second drain electrode are arranged on opposite sides of the active region, and the finger-shaped first drain electrode and the finger-shaped second drain electrode alternately arranged between the plurality of first gate electrodes and the plurality of finger-shaped second gate electrodes;
The semiconductor relay element according to claim 1 , characterized by: A main source electrode is provided in an inactive region that does not include the electron transit layer and the electron supply layer, and a plurality of finger-shaped common source electrodes that penetrate the active region from the main source electrode;
A plurality of finger-shaped first gate electrodes and a plurality of finger-shaped second gate electrodes penetrating the active region are arranged on both sides of the common source electrode, and a plurality of gate wiring patterns are arranged in the inactive region. connected in series surrounding the common source electrode;
A main first drain electrode is provided in the inactive region, and a plurality of finger-like first drain electrodes extending from the main first drain electrode to the active region are provided;
A main second drain electrode is provided in the inactive region, and a plurality of finger-shaped second drain electrodes are provided penetrating the active region from the main second drain electrode;
The main first drain electrode is arranged on the opposite side of the main source electrode and the main second drain electrode with the active region interposed therebetween, and the plurality of finger-shaped first drain electrodes and the plurality of finger-shaped second drain electrodes the electrodes are alternately arranged between the plurality of finger-shaped first gate electrodes and the plurality of finger-shaped second gate electrodes;
The semiconductor relay element according to claim 1 , characterized by: A main source electrode is provided in the active region, the common source electrode is disposed from the main source electrode through the active region, and a plurality of fingers extending from the main source electrode on one side of the common source electrode. and a plurality of finger-shaped second source electrodes extending from the main source electrode on the other side of the common source electrode;
the first gate electrode and the second gate electrode arranged on both sides of the common source electrode are electrically connected in an inactive layer region that does not include an electron transit layer and an electron supply layer;
the first gate electrode arranged on one side of the common source electrode is arranged along the main source electrode surrounding the plurality of finger-shaped first source electrodes;
the second gate electrode arranged on the other side of the common source electrode is arranged along the main source electrode surrounding the plurality of finger-shaped second source electrodes;
A main first drain electrode is provided on the side of the active region opposite to the main source electrode, and a plurality of finger-shaped first drain electrodes are provided from the main first drain electrode, the plurality of first drain electrodes comprising: arranged along the first gate electrode; and
A main second drain electrode is provided on the side of the active region opposite to the main source electrode, and a plurality of the second drain electrodes are finger-shaped from the main second drain electrode, the plurality of second drain electrodes comprising: arranged along the second gate electrode;
The semiconductor relay element according to claim 1 , characterized by: comprising the common source electrode that penetrates the active region and also serves as a main source electrode;
the active region includes the finger-like first source electrode on one side of the common source electrode;
the active region is provided with the finger-shaped second source electrode on the other side of the common source electrode;
the first gate electrode surrounds the first source electrode and is arranged along the common source electrode;
the second gate electrode surrounds the second source electrode and is arranged along the common source electrode;
the first gate electrode and the second gate electrode are connected in series in an inactive region that does not include the electron transit layer and the electron supply layer;
The active region is provided with a main first drain electrode and two finger-shaped first drain electrodes, and the main first drain electrode and the two finger-shaped first drain electrodes form the first gate electrode. being arranged around, and
The active region is provided with the main second drain electrode and two finger-shaped second drain electrodes, and the main second drain electrode and the two finger-shaped second drain electrodes constitute the second gate electrode. be placed around the
The semiconductor relay element according to claim 1 , characterized by: comprising the common source electrode that penetrates the active region and also serves as a main source electrode;
the active region includes a plurality of finger-shaped first source electrodes on one side of the common source electrode;
the active region includes a plurality of finger-like second source electrodes on the other side of the common source electrode;
the plurality of first gate electrodes surrounding the plurality of first source electrodes and arranged along the common source electrode and connected in series;
the plurality of second gate electrodes surrounding the plurality of second source electrodes and arranged along the common source electrode and connected in series;
the plurality of first gate electrodes and the plurality of second gate electrodes are connected in series in an inactive region that does not include the electron transit layer and the electron supply layer;
A main first drain electrode and a plurality of finger-shaped first drain electrodes are provided in the active region, and a plurality of the first gate electrodes are formed by the main first drain electrode and the plurality of finger-shaped first drain electrodes. being arranged around, and
A main second drain electrode and a plurality of finger-shaped second drain electrodes are provided in the active region, and a plurality of the second gate electrodes are formed by the main second drain electrode and the plurality of finger-shaped second drain electrodes. be placed around the
The semiconductor relay element according to claim 1 , characterized by: The electron transit layer made of a nitride semiconductor laminated on the buffer layer is made of GaN (gallium nitride),
The electron supply layer formed on the electron transit layer is made of Al _x Ga _1-x N (0.01≦x≦0.4) having a different bandgap energy from the GaN of the electron transit layer. to be
The semiconductor relay element according to claim 1, characterized by: A first GaN-HEMT composed of a first drain electrode, a first gate electrode, and a common source electrode, and a second GaN-HEMT composed of a second drain electrode, a second gate electrode, and a common source electrode are normally off. be an enhanced type that
The semiconductor relay element according to claim 1, characterized by: a protective film is further formed on the electron supply layer;
The semiconductor relay element according to claim 1, characterized by: a first active region including an electron transit layer and an electron supply layer;
a second active region including the electron transit layer and the electron supply layer;
an inactive region that does not include the electron transit layer and the electron supply layer;
with
In the first active region, on the electron supply layer,
a first drain electrode;
a first gate electrode;
a common source electrode sharing a first source electrode and a second source electrode;
a second gate electrode;
a second drain electrode;
are arranged in order,
In the second active region, on the electron supply layer,
a third drain electrode;
a third gate electrode;
a third source electrode;
are arranged in order,
A semiconductor relay element characterized by: the first gate electrode, the second gate electrode and the third drain electrode are connected, and the common source electrode and the third source electrode are connected;
12. The semiconductor relay element according to claim 11 , characterized by: In the first active region, on the electron supply layer,
having a plurality of finger-like common source electrodes penetrating the first active region from the main source electrode;
A plurality of finger-shaped first gate electrodes and a plurality of finger-shaped second gate electrodes penetrating the first active region are arranged on both sides of the plurality of common source electrodes, and a gate wiring pattern is formed in the inactive region. connected in series surrounding the plurality of common source electrodes by
A main first drain electrode is provided in the inactive region, and a plurality of finger-like first drain electrodes extending from the main first drain electrode to the first active region are provided;
A main second drain electrode is provided in the first inactive region, and a plurality of finger-shaped second drain electrodes extending from the main second drain electrode to the active region are provided;
The main first drain electrode and the main second drain electrode are arranged on opposite sides of the main source electrode with the active region interposed therebetween. the second drain electrodes are alternately arranged between the plurality of first gate electrodes and the plurality of second gate electrodes;
12. The semiconductor relay element according to claim 11 , characterized by: In the first active region, on the electron supply layer,
comprising the common source electrode that penetrates the first active region and also serves as a main source electrode;
the first active region includes a plurality of finger-like first source electrodes on one side of the common source electrode;
the first active region includes a plurality of finger-like second source electrodes on the other side of the common source electrode;
the plurality of first gate electrodes surrounding the plurality of first source electrodes and arranged along the common source electrode and connected in series;
the plurality of second gate electrodes surrounding the plurality of second source electrodes and arranged along the common source electrode and connected in series;
a plurality of the first gate electrodes connected in series and a plurality of the second gate electrodes connected in series are connected in series in the inactive region;
A main first drain electrode and a plurality of finger-shaped first drain electrodes are provided in the first active region, and a plurality of the first gates are formed by the main first drain electrode and the plurality of finger-shaped first drain electrodes. positioned around the electrodes; and
A main second drain electrode and a plurality of finger-shaped second drain electrodes are provided in the first active region, and a plurality of the second drain electrodes are formed by the main second drain electrode and the plurality of finger-shaped second drain electrodes. arranged around the gate electrode;
12. The semiconductor relay element according to claim 11 , characterized by: a first semiconductor switch composed of the first drain electrode, the first gate electrode, and the source electrode; and a second semiconductor switch composed of the second drain electrode, the second gate electrode, and the source electrode, It is an enhanced type that is normally off, and
a third semiconductor switch composed of the third drain electrode, the third gate electrode, and the third source electrode is of a normally-on depletion type;
12. The semiconductor relay element according to claim 11 , characterized by: a semiconductor relay element according to claim 1;
a control circuit for controlling opening and closing of the semiconductor relay element;
A semiconductor relay module comprising: a semiconductor relay element according to claim 1;
a charge/discharge circuit for the semiconductor relay element;
an oscillation circuit that controls opening and closing of the semiconductor relay element;
A semiconductor relay module comprising: a semiconductor relay element according to claim 11 ;
discrete elements of resistors or diodes;
an oscillation circuit that controls opening and closing of the semiconductor relay element;
A semiconductor relay module comprising:

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