JP7143685B2 - METHOD FOR MANUFACTURING CONDUCTIVE LAMINATED BODY, CONDUCTIVE LAMINATED BODY, AND 2-PART CONDUCTIVE FILM FORMING AGENT - Google Patents
METHOD FOR MANUFACTURING CONDUCTIVE LAMINATED BODY, CONDUCTIVE LAMINATED BODY, AND 2-PART CONDUCTIVE FILM FORMING AGENT Download PDFInfo
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- JP7143685B2 JP7143685B2 JP2018162447A JP2018162447A JP7143685B2 JP 7143685 B2 JP7143685 B2 JP 7143685B2 JP 2018162447 A JP2018162447 A JP 2018162447A JP 2018162447 A JP2018162447 A JP 2018162447A JP 7143685 B2 JP7143685 B2 JP 7143685B2
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- copper
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- resin composition
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- 238000000034 method Methods 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 153
- 229910052802 copper Inorganic materials 0.000 claims description 149
- 239000010949 copper Substances 0.000 claims description 149
- 239000002245 particle Substances 0.000 claims description 108
- 239000010410 layer Substances 0.000 claims description 76
- 239000011342 resin composition Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 48
- 239000002923 metal particle Substances 0.000 claims description 37
- 125000004432 carbon atom Chemical group C* 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 230000001603 reducing effect Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 229920001187 thermosetting polymer Polymers 0.000 claims description 27
- 239000003822 epoxy resin Substances 0.000 claims description 23
- 229920000647 polyepoxide Polymers 0.000 claims description 23
- 239000007771 core particle Substances 0.000 claims description 22
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 19
- 239000012298 atmosphere Substances 0.000 claims description 14
- 239000011247 coating layer Substances 0.000 claims description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 239000010408 film Substances 0.000 description 65
- 235000014113 dietary fatty acids Nutrition 0.000 description 38
- 229930195729 fatty acid Natural products 0.000 description 38
- 239000000194 fatty acid Substances 0.000 description 38
- 150000004665 fatty acids Chemical class 0.000 description 38
- 150000001875 compounds Chemical class 0.000 description 30
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 20
- 239000003795 chemical substances by application Substances 0.000 description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
- 150000002430 hydrocarbons Chemical group 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 13
- 239000002612 dispersion medium Substances 0.000 description 12
- 239000002904 solvent Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 125000001931 aliphatic group Chemical group 0.000 description 9
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 8
- -1 polyethylene Polymers 0.000 description 8
- 229920000728 polyester Polymers 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 4
- 150000002429 hydrazines Chemical class 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 150000002443 hydroxylamines Chemical class 0.000 description 4
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 4
- 238000006068 polycondensation reaction Methods 0.000 description 4
- 150000004671 saturated fatty acids Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 3
- 239000005750 Copper hydroxide Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 229910001956 copper hydroxide Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 235000003441 saturated fatty acids Nutrition 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- BWVZAZPLUTUBKD-UHFFFAOYSA-N 3-(5,6,6-Trimethylbicyclo[2.2.1]hept-1-yl)cyclohexanol Chemical compound CC1(C)C(C)C2CC1CC2C1CCCC(O)C1 BWVZAZPLUTUBKD-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000005263 alkylenediamine group Chemical group 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- BMFVGAAISNGQNM-UHFFFAOYSA-N isopentylamine Chemical compound CC(C)CCN BMFVGAAISNGQNM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- IVDFJHOHABJVEH-UHFFFAOYSA-N pinacol Chemical compound CC(C)(O)C(C)(C)O IVDFJHOHABJVEH-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012429 reaction media Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- 238000002174 soft lithography Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 2
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- NOOLISFMXDJSKH-UTLUCORTSA-N (+)-Neomenthol Chemical compound CC(C)[C@@H]1CC[C@@H](C)C[C@@H]1O NOOLISFMXDJSKH-UTLUCORTSA-N 0.000 description 1
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- XAMBIJWZVIZZOG-UHFFFAOYSA-N (4-methylphenyl)hydrazine Chemical compound CC1=CC=C(NN)C=C1 XAMBIJWZVIZZOG-UHFFFAOYSA-N 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- XYHKNCXZYYTLRG-UHFFFAOYSA-N 1h-imidazole-2-carbaldehyde Chemical compound O=CC1=NC=CN1 XYHKNCXZYYTLRG-UHFFFAOYSA-N 0.000 description 1
- DDHUNHGZUHZNKB-UHFFFAOYSA-N 2,2-dimethylpropane-1,3-diamine Chemical compound NCC(C)(C)CN DDHUNHGZUHZNKB-UHFFFAOYSA-N 0.000 description 1
- ADMTUGZFHLWYAU-UHFFFAOYSA-N 2,2-dimethylpropylhydrazine Chemical compound CC(C)(C)CNN ADMTUGZFHLWYAU-UHFFFAOYSA-N 0.000 description 1
- HBNHCGDYYBMKJN-UHFFFAOYSA-N 2-(4-methylcyclohexyl)propan-2-yl acetate Chemical compound CC1CCC(C(C)(C)OC(C)=O)CC1 HBNHCGDYYBMKJN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- KDWGEPODFRBACT-UHFFFAOYSA-N 2-[hydroxy(2-sulfoethyl)amino]ethanesulfonic acid Chemical compound OS(=O)(=O)CCN(O)CCS(O)(=O)=O KDWGEPODFRBACT-UHFFFAOYSA-N 0.000 description 1
- BPGIOCZAQDIBPI-UHFFFAOYSA-N 2-ethoxyethanamine Chemical compound CCOCCN BPGIOCZAQDIBPI-UHFFFAOYSA-N 0.000 description 1
- GBHCABUWWQUMAJ-UHFFFAOYSA-N 2-hydrazinoethanol Chemical compound NNCCO GBHCABUWWQUMAJ-UHFFFAOYSA-N 0.000 description 1
- VJHLHGFTPAGQSG-UHFFFAOYSA-N 2-methylbutan-2-ylhydrazine Chemical compound CCC(C)(C)NN VJHLHGFTPAGQSG-UHFFFAOYSA-N 0.000 description 1
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 1
- NGSOWKPBNFOQCR-UHFFFAOYSA-N 2-methylpropylhydrazine Chemical compound CC(C)CNN NGSOWKPBNFOQCR-UHFFFAOYSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M 3-Methylbutanoic acid Natural products CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- GOKVSLADUAKALT-UHFFFAOYSA-N 3-[2-carboxyethyl(hydroxy)amino]propanoic acid Chemical compound OC(=O)CCN(O)CCC(O)=O GOKVSLADUAKALT-UHFFFAOYSA-N 0.000 description 1
- SOYBEXQHNURCGE-UHFFFAOYSA-N 3-ethoxypropan-1-amine Chemical compound CCOCCCN SOYBEXQHNURCGE-UHFFFAOYSA-N 0.000 description 1
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 description 1
- LVJAZWNACGZVRQ-UHFFFAOYSA-N 3-methylbutylhydrazine Chemical compound CC(C)CCNN LVJAZWNACGZVRQ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 description 1
- YUUFAJOXLZUDJG-UHFFFAOYSA-N 4-methoxybutan-1-amine Chemical compound COCCCCN YUUFAJOXLZUDJG-UHFFFAOYSA-N 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- GWCJHEZFIYINAN-UHFFFAOYSA-N 4-methylpentylhydrazine Chemical compound CC(C)CCCNN GWCJHEZFIYINAN-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- MHPUGCYGQWGLJL-UHFFFAOYSA-N 5-methyl-hexanoic acid Chemical compound CC(C)CCCC(O)=O MHPUGCYGQWGLJL-UHFFFAOYSA-N 0.000 description 1
- JCJUKCIXTRWAQY-UHFFFAOYSA-N 6-hydroxynaphthalene-1-carboxylic acid Chemical compound OC1=CC=C2C(C(=O)O)=CC=CC2=C1 JCJUKCIXTRWAQY-UHFFFAOYSA-N 0.000 description 1
- XZOYHFBNQHPJRQ-UHFFFAOYSA-N 7-methyloctanoic acid Chemical compound CC(C)CCCCCC(O)=O XZOYHFBNQHPJRQ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000012691 Cu precursor Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- NOOLISFMXDJSKH-UHFFFAOYSA-N DL-menthol Natural products CC(C)C1CCC(C)CC1O NOOLISFMXDJSKH-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- WJYIASZWHGOTOU-UHFFFAOYSA-N Heptylamine Chemical compound CCCCCCCN WJYIASZWHGOTOU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CJKRXEBLWJVYJD-UHFFFAOYSA-N N,N'-diethylethylenediamine Chemical compound CCNCCNCC CJKRXEBLWJVYJD-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- RMUCZJUITONUFY-UHFFFAOYSA-N Phenelzine Chemical compound NNCCC1=CC=CC=C1 RMUCZJUITONUFY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000491 Polyphenylsulfone Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- OFLXLNCGODUUOT-UHFFFAOYSA-N acetohydrazide Chemical compound C\C(O)=N\N OFLXLNCGODUUOT-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 229920003232 aliphatic polyester Polymers 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- BIVUUOPIAYRCAP-UHFFFAOYSA-N aminoazanium;chloride Chemical compound Cl.NN BIVUUOPIAYRCAP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- NHOWLEZFTHYCTP-UHFFFAOYSA-N benzylhydrazine Chemical compound NNCC1=CC=CC=C1 NHOWLEZFTHYCTP-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N beta-methyl-butyric acid Natural products CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- SFSUYFSIKDDLOL-UHFFFAOYSA-N butan-2-ylhydrazine Chemical compound CCC(C)NN SFSUYFSIKDDLOL-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- XKLVLDXNZDIDKQ-UHFFFAOYSA-N butylhydrazine Chemical compound CCCCNN XKLVLDXNZDIDKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- LHQRDAIAWDPZGH-UHFFFAOYSA-N cyclohexylhydrazine Chemical compound NNC1CCCCC1 LHQRDAIAWDPZGH-UHFFFAOYSA-N 0.000 description 1
- QQEWMMRFXYVLQU-UHFFFAOYSA-N decylhydrazine Chemical compound CCCCCCCCCCNN QQEWMMRFXYVLQU-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- IUNMPGNGSSIWFP-UHFFFAOYSA-N dimethylaminopropylamine Chemical compound CN(C)CCCN IUNMPGNGSSIWFP-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- OKMQERWDFNIGLL-UHFFFAOYSA-N dodecylhydrazine Chemical compound CCCCCCCCCCCCNN OKMQERWDFNIGLL-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- WHRIKZCFRVTHJH-UHFFFAOYSA-N ethylhydrazine Chemical compound CCNN WHRIKZCFRVTHJH-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- AETGYOWKOXPRCB-UHFFFAOYSA-N heptylhydrazine Chemical compound CCCCCCCNN AETGYOWKOXPRCB-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- VKYBUEJAQKBUFU-UHFFFAOYSA-N hexylhydrazine Chemical compound CCCCCCNN VKYBUEJAQKBUFU-UHFFFAOYSA-N 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 239000012493 hydrazine sulfate Substances 0.000 description 1
- 229910000377 hydrazine sulfate Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229940041616 menthol Drugs 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- UDGSVBYJWHOHNN-UHFFFAOYSA-N n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCN UDGSVBYJWHOHNN-UHFFFAOYSA-N 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- DILRJUIACXKSQE-UHFFFAOYSA-N n',n'-dimethylethane-1,2-diamine Chemical compound CN(C)CCN DILRJUIACXKSQE-UHFFFAOYSA-N 0.000 description 1
- KVKFRMCSXWQSNT-UHFFFAOYSA-N n,n'-dimethylethane-1,2-diamine Chemical compound CNCCNC KVKFRMCSXWQSNT-UHFFFAOYSA-N 0.000 description 1
- MDKQJOKKKZNQDG-UHFFFAOYSA-N n,n'-dimethylhexane-1,6-diamine Chemical compound CNCCCCCCNC MDKQJOKKKZNQDG-UHFFFAOYSA-N 0.000 description 1
- VMESOKCXSYNAKD-UHFFFAOYSA-N n,n-dimethylhydroxylamine Chemical compound CN(C)O VMESOKCXSYNAKD-UHFFFAOYSA-N 0.000 description 1
- UQUPIHHYKUEXQD-UHFFFAOYSA-N n,n′-dimethyl-1,3-propanediamine Chemical compound CNCCCNC UQUPIHHYKUEXQD-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- VDUIPQNXOQMTBF-UHFFFAOYSA-N n-ethylhydroxylamine Chemical compound CCNO VDUIPQNXOQMTBF-UHFFFAOYSA-N 0.000 description 1
- ICVFPLUSMYSIFO-UHFFFAOYSA-N n-ethylpentan-1-amine Chemical compound CCCCCNCC ICVFPLUSMYSIFO-UHFFFAOYSA-N 0.000 description 1
- XCVNDBIXFPGMIW-UHFFFAOYSA-N n-ethylpropan-1-amine Chemical compound CCCNCC XCVNDBIXFPGMIW-UHFFFAOYSA-N 0.000 description 1
- PXSXRABJBXYMFT-UHFFFAOYSA-N n-hexylhexan-1-amine Chemical compound CCCCCCNCCCCCC PXSXRABJBXYMFT-UHFFFAOYSA-N 0.000 description 1
- CPQCSJYYDADLCZ-UHFFFAOYSA-N n-methylhydroxylamine Chemical compound CNO CPQCSJYYDADLCZ-UHFFFAOYSA-N 0.000 description 1
- JACMPVXHEARCBO-UHFFFAOYSA-N n-pentylpentan-1-amine Chemical compound CCCCCNCCCCC JACMPVXHEARCBO-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- IDIXOSREORKJTN-UHFFFAOYSA-N nonylhydrazine Chemical compound CCCCCCCCCNN IDIXOSREORKJTN-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- WSLDIBCXIOECNX-UHFFFAOYSA-N octylhydrazine Chemical compound CCCCCCCCNN WSLDIBCXIOECNX-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- JLFNLZLINWHATN-UHFFFAOYSA-N pentaethylene glycol Chemical compound OCCOCCOCCOCCOCCO JLFNLZLINWHATN-UHFFFAOYSA-N 0.000 description 1
- 229940100684 pentylamine Drugs 0.000 description 1
- YVZACCLFRNQBNO-UHFFFAOYSA-N pentylhydrazine Chemical compound CCCCCNN YVZACCLFRNQBNO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229960000964 phenelzine Drugs 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000343 polyazomethine Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920006149 polyester-amide block copolymer Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- KJAQRHMKLVGSCG-UHFFFAOYSA-N propan-2-ylhydrazine Chemical compound CC(C)NN KJAQRHMKLVGSCG-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- UKPBXIFLSVLDPA-UHFFFAOYSA-N propylhydrazine Chemical compound CCCNN UKPBXIFLSVLDPA-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- CQRYARSYNCAZFO-UHFFFAOYSA-N salicyl alcohol Chemical compound OCC1=CC=CC=C1O CQRYARSYNCAZFO-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- MUQNAPSBHXFMHT-UHFFFAOYSA-N tert-butylhydrazine Chemical compound CC(C)(C)NN MUQNAPSBHXFMHT-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YHTQKJJDMAPMSS-UHFFFAOYSA-N undecylhydrazine Chemical compound CCCCCCCCCCCNN YHTQKJJDMAPMSS-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
本発明は、導電性積層体及びその製造方法、並びに2剤型導電膜形成剤に関する。 TECHNICAL FIELD The present invention relates to a conductive laminate, a method for producing the same, and a two-component conductive film-forming agent.
基材上に導電性を有する膜(以下、導電膜という場合もある)が設けられた導電性積層体は、車載用周辺部材、半導体パッケージ、スマートフォンアンテナ等の電子デバイスを作製するための電子材料として利用されている。また、電磁波シールド、スマートフォンアンテナ、車載用配線、積層板、太陽電池パネル、ディスプレイ、トランジスタ、半導体パッケージ、積層セラミックコンデンサ等の電子部品においては、基材の表面に導通を確保するための導電膜を設けることが行われている。 A conductive laminate in which a film having conductivity (hereinafter sometimes referred to as a conductive film) is provided on a base material is an electronic material for producing electronic devices such as peripheral parts for automobiles, semiconductor packages, and smartphone antennas. is used as Electromagnetic wave shields, smartphone antennas, automotive wiring, laminates, solar panels, displays, transistors, semiconductor packages, multilayer ceramic capacitors, and other electronic components have a conductive film on the surface of the substrate to ensure conduction. is being established.
基材上に導電膜を形成する方法として、金属粒子が含まれるインク、ペースト等の導体形成剤を基材上に塗布し、塗膜を加熱することにより、金属粒子を焼結させて導体化する方法が知られている(例えば、下記特許文献1及び2を参照)。このような方法によれば、ガラス基板や誘電体グリーンシート等の基材上に配線や内部電極等の導電膜を所望の形状で効率よく形成することができる。 As a method of forming a conductive film on a base material, a conductor-forming agent such as ink or paste containing metal particles is applied to the base material, and the coating is heated to sinter the metal particles to form a conductor. There is known a method for doing so (see, for example, Patent Documents 1 and 2 below). According to such a method, conductive films such as wirings and internal electrodes can be efficiently formed in desired shapes on base materials such as glass substrates and dielectric green sheets.
しかし、金属粒子を焼結して形成される導電膜は、基材の材質によっては充分な接着性が得られず、導通が確保できない場合がある。最近では、電子部品又は電子材料に用いられている基材は多様化しており、基材と導電膜との接着性の向上が課題となっている。 However, a conductive film formed by sintering metal particles may not have sufficient adhesiveness depending on the material of the base material, and may not be able to ensure conduction. Recently, substrates used for electronic parts or electronic materials are diversified, and improvement of adhesiveness between substrates and conductive films has become an issue.
本発明は、上記事情に鑑みてなされたものであり、基材との接着性に優れる導電膜を有する導電性積層体及びその製造方法を提供することを目的とする。また、本発明は、基材との接着性に優れる導電膜を形成することができる2剤型導電膜形成剤を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a conductive laminate having a conductive film with excellent adhesion to a substrate, and a method for producing the same. Another object of the present invention is to provide a two-component conductive film-forming agent capable of forming a conductive film having excellent adhesiveness to a substrate.
上記課題を解決するために本発明は、基材と、基材上に設けられた導電性を有する膜とを備える導電性積層体を製造する方法であって、基材上に熱硬化性樹脂を含む樹脂組成物層を設ける工程と、樹脂組成物層上に銅含有粒子を含む金属粒子含有層を設ける工程と、樹脂組成物層及び金属粒子含有層を加熱することにより、樹脂組成物層の硬化物によって基材に接着された導電膜を形成する工程と、を備える導電性積層体の製造方法を提供する。 In order to solve the above problems, the present invention provides a method for producing a conductive laminate comprising a base material and a conductive film provided on the base material, wherein a thermosetting resin is coated on the base material A step of providing a resin composition layer containing the and forming a conductive film adhered to a base material with a cured product of (1).
本発明の導電性積層体の製造方法によれば、基材との接着性に優れる導電膜を有する導電性積層体を得ることができる。 According to the method for producing a conductive laminate of the present invention, it is possible to obtain a conductive laminate having a conductive film with excellent adhesiveness to a substrate.
上記工程によって基材との接着性に優れる導電膜が形成される理由について本発明者らは以下のとおり考えている。硬化する前の樹脂組成物層上に金属粒子含有層を設けることで、加熱後に銅含有粒子の焼結体が樹脂硬化物に少し埋まった構造が形成され、銅含有粒子の焼結体が強固に固定されることが、基材との接着性に優れた導電膜が得られる要因として考えられる。 The present inventors consider the reason why the conductive film having excellent adhesiveness to the substrate is formed by the above process as follows. By providing a metal particle-containing layer on the resin composition layer before curing, a structure is formed in which the sintered body of the copper-containing particles is slightly embedded in the cured resin after heating, and the sintered body of the copper-containing particles is strong. is considered to be a factor in obtaining a conductive film having excellent adhesiveness to the substrate.
上記熱硬化性樹脂が、ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂、及び/又は、ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂を含むことが好ましい。この場合、導電膜の導電性と、基材に対する接着性とを高水準で両立させることができる。 The thermosetting resin is an epoxy resin having a bisphenol skeleton and a linear hydrocarbon group having 4 or more carbon atoms, and/or an epoxy resin having a bisphenol skeleton and a polyoxyalkylene group containing 3 or more ether bonds. is preferably included. In this case, both the conductivity of the conductive film and the adhesiveness to the substrate can be achieved at a high level.
また、上記銅含有粒子が、銅を含むコア粒子と、コア粒子の表面の少なくとも一部を被覆する有機被覆層とを有する被覆銅粒子であると、より低温で導電膜を形成することができる。 Further, when the copper-containing particles are coated copper particles having a core particle containing copper and an organic coating layer covering at least a part of the surface of the core particle, a conductive film can be formed at a lower temperature. .
金属粒子含有層の形成及び導電膜の厚みの制御を容易にする観点から、金属粒子含有層が、銅含有粒子を含む導体形成用組成物を樹脂組成物層上に塗布することにより形成され、導体形成用組成物における銅含有粒子の含有量が、導体形成用組成物の全質量100質量部に対して、20~80質量部であることが好ましい。 From the viewpoint of facilitating the formation of the metal particle-containing layer and the control of the thickness of the conductive film, the metal particle-containing layer is formed by applying a conductor-forming composition containing copper-containing particles onto the resin composition layer, The content of the copper-containing particles in the conductor-forming composition is preferably 20 to 80 parts by mass with respect to 100 parts by mass of the total conductor-forming composition.
上記加熱の温度は100℃~250℃であってもよい。 The heating temperature may range from 100°C to 250°C.
本発明はまた、基材と、該基材上に設けられた導電膜とを備える導電性積層体であって、導電膜が銅含有粒子の焼結体を含み、基材と導電膜との間に、これらを接着する熱硬化性樹脂組成物の硬化物を有する導電性積層体を提供する。 The present invention also provides a conductive laminate comprising a substrate and a conductive film provided on the substrate, wherein the conductive film contains a sintered body of copper-containing particles, and the substrate and the conductive film A conductive laminate having a cured thermosetting resin composition between them is provided.
本発明の導電性積層体は、上記構成を有する導電膜が基材との接着性に優れることから、導電性を確保しやすいものになり得る。 In the conductive laminate of the present invention, the conductive film having the structure described above has excellent adhesiveness to the base material, so that the conductive laminate can easily ensure conductivity.
本発明の導電性積層体において、上記熱硬化性樹脂組成物が、ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂、及び/又は、ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂を含むものであってもよい。この場合、導電性積層体は、導電性及び基材に対する接着性の双方に優れた導電膜を備えることができる。 In the conductive laminate of the present invention, the thermosetting resin composition is an epoxy resin having a bisphenol skeleton and a linear hydrocarbon group having 4 or more carbon atoms, and/or a bisphenol skeleton and 3 or more ether bonds. It may contain an epoxy resin having a polyoxyalkylene group containing. In this case, the conductive laminate can have a conductive film that is excellent in both conductivity and adhesiveness to the substrate.
本発明はまた、熱硬化性樹脂を含むa剤と、銅含有粒子を含むb剤とを備える2剤型導電膜形成剤を提供する。 The present invention also provides a two-component conductive film-forming agent comprising a component containing a thermosetting resin and a component b containing copper-containing particles.
本発明の2剤型導電膜形成剤によれば、上記本発明に係る導電性積層体の製造方法における樹脂組成物層と金属粒子含有層とを形成することができ、基材上に基材との接着性に優れる導電膜を形成することができる。 According to the two-component conductive film-forming agent of the present invention, the resin composition layer and the metal particle-containing layer in the method for producing a conductive laminate according to the present invention can be formed. It is possible to form a conductive film having excellent adhesion to the film.
上記熱硬化性樹脂が、ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂、及び/又は、ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂を含むことができる。この場合、基材上に、導電性及び基材に対する接着性の双方に優れた導電膜を形成することができる。 The thermosetting resin is an epoxy resin having a bisphenol skeleton and a linear hydrocarbon group having 4 or more carbon atoms, and/or an epoxy resin having a bisphenol skeleton and a polyoxyalkylene group containing 3 or more ether bonds. can include In this case, a conductive film excellent in both conductivity and adhesiveness to the substrate can be formed on the substrate.
上記銅含有粒子が、銅を含むコア粒子と、コア粒子の表面の少なくとも一部を被覆する有機被覆層とを有する被覆銅粒子であってもよい。この場合、基材上に、より低温で導電膜を形成することができる。 The copper-containing particles may be coated copper particles having a core particle containing copper and an organic coating layer coating at least part of the surface of the core particle. In this case, the conductive film can be formed on the substrate at a lower temperature.
本発明によれば、基材との接着性に優れる導電膜を有する導電性積層体及びその製造方法を提供することできる。また、本発明によれば、基材との接着性に優れる導電膜を形成することができる2剤型導電膜形成剤を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the electrically conductive laminated body which has an electrically conductive film which is excellent in adhesiveness with a base material, and its manufacturing method can be provided. Moreover, according to the present invention, it is possible to provide a two-component conductive film-forming agent capable of forming a conductive film having excellent adhesiveness to a substrate.
以下、本発明を実施するための形態について詳細に説明する。ただし、本発明は以下の実施形態に限定されるものではない。 DETAILED DESCRIPTION OF THE INVENTION Embodiments for carrying out the present invention will be described in detail below. However, the present invention is not limited to the following embodiments.
本明細書において「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。さらに本明細書において組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。 In this specification, the numerical range indicated using "to" indicates the range including the numerical values before and after "to" as the minimum and maximum values, respectively. Furthermore, in the present specification, the content of each component in the composition refers to the total amount of the multiple substances present in the composition when there are multiple substances corresponding to each component in the composition, unless otherwise specified. means
本明細書において「工程」とは、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の目的が達成されれば、本用語に含まれる。 As used herein, the term "process" includes not only an independent process but also a process that cannot be clearly distinguished from other processes as long as the intended purpose of the process is achieved.
本明細書において「層」又は「膜」とは、平面図として観察したときに、全面に形成されている形状の構成に加え、一部に形成されている形状の構成も包含される。 In the present specification, the term "layer" or "film" includes not only a shape configuration formed over the entire surface but also a shape configuration formed partially when observed as a plan view.
本明細書において「積層体」とは、層を積み重ねることを示し、2つ以上の層が結合されていてもよい。 As used herein, the term "laminate" indicates stacking layers, and two or more layers may be combined.
<導電性積層体の製造方法>
本実施形態の導電性積層体の製造方法は、基材と、基材上に設けられた導電性を有する膜とを備える導電性積層体を製造する方法であって、基材上に熱硬化性樹脂を含む樹脂組成物層を設ける工程S1と、樹脂組成物層上に銅含有粒子を含む金属粒子含有層を設ける工程S2と、樹脂組成物層及び金属粒子含有層を加熱することにより、樹脂組成物層の硬化物によって基材に接着された導電膜を形成する工程S3とを備える。
<Method for manufacturing conductive laminate>
The method for producing a conductive laminate of the present embodiment is a method for producing a conductive laminate comprising a base material and a conductive film provided on the base material. Step S1 of providing a resin composition layer containing a curable resin, Step S2 of providing a metal particle-containing layer containing copper-containing particles on the resin composition layer, and heating the resin composition layer and the metal particle-containing layer, and a step S3 of forming a conductive film adhered to the substrate by a cured product of the resin composition layer.
(工程S1)
基材としては、特に制限されず、導電性を有していても有していなくてもよい。基材の材質としては、例えば、金、銀、銅、白金、パラジウム、亜鉛、ニッケル、錫、コバルト、鉄、アルミニウム等の金属、これら金属の合金、酸化インジウム錫、酸化亜鉛、酸化インジウム亜鉛、酸化インジウムガリウム亜鉛、ケイ素、炭化ケイ素、窒化ガリウム等の半導体、石英ガラス、ホウケイ酸ガラス、ソーダ石灰ガラス等のガラス、黒鉛、グラファイト等のカーボン材料、樹脂、紙などを挙げることができる。
(Step S1)
The base material is not particularly limited, and may or may not have conductivity. Examples of materials for the substrate include metals such as gold, silver, copper, platinum, palladium, zinc, nickel, tin, cobalt, iron, and aluminum, alloys of these metals, indium tin oxide, zinc oxide, indium zinc oxide, Semiconductors such as indium gallium zinc oxide, silicon, silicon carbide, and gallium nitride; glasses such as quartz glass, borosilicate glass, and soda lime glass; carbon materials such as graphite and graphite; resins; and paper.
樹脂としては、熱可塑性樹脂及び熱硬化性樹脂を用いることができ、具体的には、ポリエチレン、ポリプロピレン、ポリメチルペンテン等のポリオレフィン樹脂、ポリカーボネート樹脂、液晶ポリマー樹脂、ポリアミド、ポリアラミド、ポリエーテルエーテルケトン、ポリフェニルスルホン、ポリエーテルスルホン、ポリアミドイミド、ポリイミドなどが挙げられる。 As the resin, thermoplastic resins and thermosetting resins can be used. Specifically, polyolefin resins such as polyethylene, polypropylene, and polymethylpentene, polycarbonate resins, liquid crystal polymer resins, polyamides, polyaramids, and polyether ether ketones can be used. , polyphenylsulfone, polyethersulfone, polyamideimide, and polyimide.
基材は、液晶樹脂(LCP)基材であってもよい。液晶樹脂とは、樹脂が高温での溶融や溶媒への溶解により流動状態となった際に、分子鎖がほぼ規則的に整列している状態(液晶性)を示す高分子を指す。たとえば、全芳香族ポリエステル、芳香族ポリアゾメチン、芳香族脂肪族ポリエステル、芳香族ポリエステルカーボネート、全芳香族又は非全芳香族ポリエステルアミドなどのうちの一部の樹脂が液晶性を示すことが知られている。これらのポリエステルとして、パラヒドロキシ安息香酸とその他の成分とを直鎖状に重縮合したポリエステルが挙げられる。具体的には、エチレンテレフタレートとパラヒドロキシ安息香酸とを重縮合したポリエステル、フェノールおよびフタル酸とパラヒドロキシ安息香酸とを重縮合したポリエステル、2,6-ヒドロキシナフトエ酸とパラヒドロキシ安息香酸とを重縮合したポリエステルなどが挙げられる。LCP基材は市販品を用いることができ、例えば、「スミカスーパーE6007」(住友化学株式会社製、商品名)、「UENO LCP 2030G」(上野製薬株式会社製、商品名)などが挙げられる。 The substrate may be a liquid crystal resin (LCP) substrate. A liquid crystal resin refers to a polymer that exhibits a state in which molecular chains are almost regularly aligned (liquid crystallinity) when the resin is melted at high temperatures or dissolved in a solvent to become a fluid state. For example, some resins among wholly aromatic polyesters, aromatic polyazomethines, aromatic-aliphatic polyesters, aromatic polyester carbonates, wholly aromatic or non-wholly aromatic polyesteramides, etc. are known to exhibit liquid crystallinity. ing. Examples of these polyesters include polyesters obtained by linear polycondensation of parahydroxybenzoic acid and other components. Specifically, polyesters obtained by polycondensation of ethylene terephthalate and parahydroxybenzoic acid, polyesters obtained by polycondensation of phenol, phthalic acid and parahydroxybenzoic acid, and polycondensation of 2,6-hydroxynaphthoic acid and parahydroxybenzoic acid. Examples include condensed polyesters. A commercially available LCP base material can be used, and examples thereof include "Sumikasuper E6007" (manufactured by Sumitomo Chemical Co., Ltd., trade name) and "UENO LCP 2030G" (manufactured by Ueno Pharmaceutical Co., Ltd., trade name).
基材は、充填剤を含んでいてもよい。充填剤としては、ガラスファイバー、無機フィラー、及びこれらの併用が挙げられる。 The substrate may contain fillers. Fillers include glass fibers, inorganic fillers, and combinations thereof.
基材の形状は、特に制限されず、板状、棒状、ロール状、フィルム状、球状、立方体状、直方体状等であってよい。また、これらを二つ以上組み合わせ形状、あるいはどれにも属さないような複雑な立体形状であってよい。 The shape of the substrate is not particularly limited, and may be plate-like, rod-like, roll-like, film-like, spherical, cubic, rectangular parallelepiped, or the like. Also, it may be a combination of two or more of these, or a complicated three-dimensional shape that does not belong to any of them.
樹脂組成物層は、熱硬化性樹脂を含む熱硬化性樹脂組成物を用いて形成することができる。熱硬化性樹脂としては、エポキシ樹脂、ウレタン樹脂、イミド樹脂、フェノール樹脂などが挙げられる。エポキシ樹脂は、柔軟性及び樹脂硬化物と基材との密着性の観点から、ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂、ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂のうちの1種又は2種以上を用いることができる。 The resin composition layer can be formed using a thermosetting resin composition containing a thermosetting resin. Thermosetting resins include epoxy resins, urethane resins, imide resins, and phenol resins. Epoxy resins, from the viewpoint of flexibility and adhesion between the cured resin and the substrate, include epoxy resins having a bisphenol skeleton and a straight-chain hydrocarbon group with 4 or more carbon atoms, and bisphenol skeletons and 3 or more ether bonds. One or two or more of epoxy resins having a polyoxyalkylene group can be used.
ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂としては、例えば、ビスフェノールA骨格及び炭素数6の直鎖状炭化水素基とを有するエポキシ樹脂である「EPICLON EXA4816」(DIC株式会社製、商品名)などの市販品を用いることができる。ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂としては、例えば、ポリアルキレンオキシ化したビスフェノールA型エポキシ樹脂「EPICLON EXA4850-150」(DIC株式会社製、商品名)などの市販品を用いることができる。 As the epoxy resin having a bisphenol skeleton and a linear hydrocarbon group having 4 or more carbon atoms, for example, "EPICLON EXA4816" (which is an epoxy resin having a bisphenol A skeleton and a linear hydrocarbon group having 6 carbon atoms) ( DIC Corporation, trade name) can be used. Examples of epoxy resins having a bisphenol skeleton and a polyoxyalkylene group containing three or more ether bonds include polyalkyleneoxylated bisphenol A type epoxy resin "EPICLON EXA4850-150" (manufactured by DIC Corporation, trade name). can be used.
熱硬化性樹脂組成物における熱硬化性樹脂の含有量は、組成物全量を基準として、10~70質量%、20~60質量%、又は30~50質量%であってもよい。 The content of the thermosetting resin in the thermosetting resin composition may be 10 to 70% by mass, 20 to 60% by mass, or 30 to 50% by mass based on the total amount of the composition.
熱硬化性樹脂組成物は、硬化剤を含有することができる。上記のようなエポキシ樹脂を硬化するための硬化剤としては、アミン系化合物、酸無水物、フェノール系化合物、イミダゾール化合物、潜在型硬化剤等が挙げられる。硬化剤は、1種を単独で又は2種以上を組み合わせて用いることができる。 The thermosetting resin composition can contain a curing agent. Curing agents for curing the above epoxy resins include amine compounds, acid anhydrides, phenol compounds, imidazole compounds, latent curing agents, and the like. Curing agents may be used singly or in combination of two or more.
熱硬化性樹脂組成物における硬化剤の含有量は、熱硬化性樹脂100質量部に対して、1~20質量部、3~15質量部、又は5~10質量部であってもよい。 The content of the curing agent in the thermosetting resin composition may be 1 to 20 parts by weight, 3 to 15 parts by weight, or 5 to 10 parts by weight with respect to 100 parts by weight of the thermosetting resin.
熱硬化性樹脂組成物には、必要に応じて、分散媒、無機充填材、カップリング剤等のその他の成分を含んでもよい。分散媒としては、メタノール、エタノール、プロパノール、ブタノール等のアルコール類、アセトン、メチルエチルケトン、メチルイソブチルケトン等のケトン類、トルエン、キシレン等の芳香族化合物、ブタン、ペンタン、ヘキサン、ヘプタン、オクタン等の鎖状炭化水素類、酢酸エチル、酢酸プロピル、酢酸ブチル等のエステル類、シクロヘキサン、メチルシクロヘキサン、シクロヘキサノン等の環状化合類等が挙げられる。無機充填材としては、絶縁性の高いものが好ましく、シリカ、アルミナ、チッ化ケイ素、チッ化アルミニウム、チッ化ホウ素等が挙げられる。カップリング剤としては、主成分元素としてSi、Ti、Zr、Al、Sn、又はCeを有する化合物等が挙げられる。 The thermosetting resin composition may contain other components such as a dispersion medium, an inorganic filler, and a coupling agent, if necessary. Dispersion media include alcohols such as methanol, ethanol, propanol and butanol; ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone; aromatic compounds such as toluene and xylene; chains such as butane, pentane, hexane, heptane and octane. hydrocarbons, esters such as ethyl acetate, propyl acetate and butyl acetate, and cyclic compounds such as cyclohexane, methylcyclohexane and cyclohexanone. As the inorganic filler, one having a high insulating property is preferable, and examples thereof include silica, alumina, silicon nitride, aluminum nitride, and boron nitride. Examples of coupling agents include compounds containing Si, Ti, Zr, Al, Sn, or Ce as main component elements.
熱硬化性樹脂を含む樹脂組成物層は、基材上に、上述した熱硬化性樹脂組成物を公知の方法で塗布することにより形成することができる。塗布方法としては、インクジェット法、スーパーインクジェット法、スクリーン印刷法、転写印刷法、オフセット印刷法、ジェットプリンティング法、ディスペンス法、ジェットディスペンス法、ニードルディスペンス法、カンマコート法、バーコート法、スリットコート法、ダイコート法、グラビアコート法、凸版印刷法、凹版印刷法、グラビア印刷法、ソフトリソグラフ法、ディップペンリソグラフ法、粒子堆積法、スプレーコート法、スピンコート法、ディップコート法、電着塗装法等を挙げることができる。 A resin composition layer containing a thermosetting resin can be formed by applying the thermosetting resin composition described above onto a substrate by a known method. Application methods include inkjet, super inkjet, screen printing, transfer printing, offset printing, jet printing, dispensing, jet dispensing, needle dispensing, comma coating, bar coating, and slit coating. , die coating method, gravure coating method, relief printing method, intaglio printing method, gravure printing method, soft lithography method, dip pen lithography method, particle deposition method, spray coating method, spin coating method, dip coating method, electrodeposition coating method, etc. can be mentioned.
本実施形態においては、基材上に樹脂組成物層を設ける前に、基材表面を洗浄して清浄な状態とすることが好ましい。基材表面を洗浄する方法としては、溶剤又は水を含む洗浄液で洗浄する方法、基材表面に紫外線を照射して洗浄する方法、基材表面にプラズマビームを照射して洗浄する方法、基材表面にドライアイス粒子を噴射して洗浄する方法等が挙げられる。 In the present embodiment, it is preferable to clean the substrate surface by washing it before providing the resin composition layer on the substrate. Methods for cleaning the substrate surface include a method of cleaning with a cleaning solution containing solvent or water, a method of cleaning by irradiating the surface of the substrate with ultraviolet rays, a method of cleaning by irradiating the surface of the substrate with a plasma beam, and a method of cleaning the surface of the substrate. A method of washing by spraying dry ice particles on the surface, and the like can be mentioned.
基材上に設けられる樹脂組成物層の形状は特に制限されず、目的に応じて適宜選択することができる。また、樹脂組成物層の厚みは目的に応じて適宜設定することができるが、例えば、0.2μm~50μmとすることができ、密着性の観点から、0.5μm~30μmとすることが好ましい。 The shape of the resin composition layer provided on the substrate is not particularly limited, and can be appropriately selected according to the purpose. In addition, the thickness of the resin composition layer can be appropriately set according to the purpose. .
基材上に樹脂組成物層を設けた後、基材を加熱して余分な分散媒を除去することができる。基材を加熱するときの温度範囲は、室温~90℃であることが好ましく、40℃~80℃であることがより好ましい。基材の加熱温度が90℃以下であると、樹脂組成物層の硬化が進行しすぎることを抑制でき、工程S3で形成される銅の焼結体を樹脂硬化物に埋め込むことが容易となり、基材との接着性に優れた導電膜を形成しやすくなる。 After providing the resin composition layer on the base material, the base material can be heated to remove excess dispersion medium. The temperature range for heating the substrate is preferably room temperature to 90°C, more preferably 40°C to 80°C. When the heating temperature of the base material is 90° C. or less, it is possible to suppress excessive curing of the resin composition layer, and it becomes easy to embed the copper sintered body formed in step S3 in the resin cured product. It becomes easier to form a conductive film having excellent adhesiveness to the substrate.
(工程S2)
金属粒子含有層は、銅含有粒子を含む導体形成用組成物を用いて形成することができる。導体形成用組成物は、銅含有粒子の他に、必要に応じて、分散媒、樹脂成分等のその他の成分を含有うすることができる。
(Step S2)
The metal particle-containing layer can be formed using a conductor-forming composition containing copper-containing particles. In addition to the copper-containing particles, the conductor-forming composition may optionally contain other components such as a dispersion medium and a resin component.
銅含有粒子は、主として金属銅から形成された銅粒子であってもよいし、主として金属銅から形成された銅粒子であるコア粒子とコア粒子の表面の一部又は全部を覆う有機被覆層とを有する被覆銅粒子であってもよい。銅粒子と被覆銅粒子とを組み合わせてもよい。被覆銅粒子の有機被覆層は、通常、導体形成用組成物から形成される金属粒子含有層を焼結する際の加熱により熱分解して消失する。 The copper-containing particles may be copper particles mainly made of metallic copper, or a core particle that is a copper particle mainly made of metallic copper and an organic coating layer covering part or all of the surface of the core particle. It may be a coated copper particle having A combination of copper particles and coated copper particles may also be used. The organic coating layer of the coated copper particles is usually thermally decomposed and lost by heating when the metal particle-containing layer formed from the conductor-forming composition is sintered.
被覆銅粒子は、低温(例えば150℃以下)の加熱により融着して、導体を形成し易い。有機被覆層がコア粒子である銅粒子の保護材として機能し、コア粒子の酸化が抑制される。このため、大気中での長期保存後も低温での良好な融着性が維持され易い。 The coated copper particles are easily fused by heating at a low temperature (for example, 150° C. or lower) to form a conductor. The organic coating layer functions as a protective material for the copper particles, which are the core particles, and suppresses oxidation of the core particles. For this reason, even after long-term storage in the atmosphere, good fusion-bondability at low temperatures is likely to be maintained.
銅粒子又はコア粒子における銅が占める元素割合は、水素、炭素、酸素を除く全元素を基準として、80原子%以上、90原子%以上、又は95原子%以上であってもよい。銅が占める元素割合が80原子%以上であると、銅に由来する熱伝導率及び焼結性が発現し易い傾向にある。 The element ratio of copper in the copper particles or core particles may be 80 atomic % or more, 90 atomic % or more, or 95 atomic % or more based on all elements excluding hydrogen, carbon and oxygen. When the element ratio of copper is 80 atomic % or more, the thermal conductivity and sinterability derived from copper tend to be easily exhibited.
銅粒子又はコア粒子は、銅及び銅を含む合金からなる群より選択される少なくとも一種を含むことができる。また、銅粒子又はコア粒子は、金属銅以外の少量の他の成分を含むことができる。金属銅以外の成分の例としては、金、銀、白金、錫及びニッケル等の金属又はこれらの金属元素を含む金属化合物、酸化銅、塩化銅、並びに有機物が挙げられる。有機物は、後述の脂肪酸銅、還元性化合物又は脂肪族アミンに由来する物質であってもよい。導電性に優れる導体を形成する観点からは、銅粒子中の金属銅の含有率は、銅粒子の質量を基準として50~100質量%、60~100質量%、又は70~100質量%であってもよい。 The copper particles or core particles can contain at least one selected from the group consisting of copper and alloys containing copper. Also, the copper particles or core particles can contain minor amounts of other components other than metallic copper. Examples of components other than metallic copper include metals such as gold, silver, platinum, tin and nickel, metal compounds containing these metal elements, copper oxide, copper chloride, and organic substances. The organic substance may be a substance derived from fatty acid copper, a reducing compound, or an aliphatic amine, which will be described later. From the viewpoint of forming a conductor with excellent conductivity, the content of metallic copper in the copper particles is 50 to 100% by mass, 60 to 100% by mass, or 70 to 100% by mass based on the mass of the copper particles. may
被覆銅粒子において、コア粒子の表面を覆う有機被覆層の割合は、コア粒子及び有機被覆層の合計質量を基準として0.1~20質量%であってもよい。有機被覆層の割合が0.1質量%以上であると、充分な耐酸化性が得られ易い傾向がある。有機被覆層の割合が20質量%以下であると、被覆銅粒子の低温での融着性がより良好となる傾向にある。同様の観点から、コア粒子及び有機被覆層の合計質量を基準とする有機被覆層の割合は、0.3~10質量%、又は0.5~5質量%であってもよい。 In the coated copper particles, the ratio of the organic coating layer covering the surface of the core particles may be 0.1 to 20% by mass based on the total mass of the core particles and the organic coating layer. When the proportion of the organic coating layer is 0.1% by mass or more, there is a tendency that sufficient oxidation resistance is likely to be obtained. When the proportion of the organic coating layer is 20% by mass or less, the low-temperature fusion bondability of the coated copper particles tends to be better. From the same point of view, the proportion of the organic coating layer based on the total mass of the core particles and the organic coating layer may be 0.3-10% by mass, or 0.5-5% by mass.
被覆銅粒子は、例えば、脂肪酸銅、還元性化合物、及び脂肪族アミンを含む混合物を加熱する工程を含む方法によって製造される。この方法は、必要に応じて、加熱工程後の遠心分離、洗浄等の工程を有していてもよい。 Coated copper particles are produced, for example, by a method that includes heating a mixture containing fatty acid copper, a reducing compound, and an aliphatic amine. This method may optionally include steps such as centrifugation and washing after the heating step.
上記方法において、脂肪酸銅は、銅前駆体として用いられる。これにより、より沸点の低い(すなわち、分子量の小さい)脂肪族アミンを反応媒として使用することができる。沸点の低い脂肪族アミンを用いると、得られる被覆銅粒子の有機被覆層が、より熱分解又は揮発し易くなり、それにより、良好な導電性を有する導体をより低温での焼結により形成できると考えられる。 In the above method, fatty acid copper is used as a copper precursor. This allows lower boiling point (ie, lower molecular weight) aliphatic amines to be used as the reaction medium. When an aliphatic amine with a low boiling point is used, the resulting organic coating layer of the coated copper particles becomes more susceptible to thermal decomposition or volatilization, so that conductors with good electrical conductivity can be formed by sintering at lower temperatures. it is conceivable that.
脂肪酸銅を構成する脂肪酸は、RCOOH(Rは直鎖状又は分岐状の炭化水素基を示す。)で表される1価のカルボン酸である。脂肪酸は、飽和脂肪酸又は不飽和脂肪酸のいずれであってもよい。コア粒子を効率的に被覆して酸化を抑制する観点からは、脂肪酸は直鎖状の飽和脂肪酸であってもよい。脂肪酸は1種のみでも、2種以上であってもよい。 A fatty acid constituting fatty acid copper is a monovalent carboxylic acid represented by RCOOH (R represents a linear or branched hydrocarbon group). Fatty acids may be either saturated or unsaturated fatty acids. From the viewpoint of efficiently covering the core particles to suppress oxidation, the fatty acid may be a linear saturated fatty acid. Only one kind of fatty acid may be used, or two or more kinds thereof may be used.
脂肪酸の炭素数は、9以下であってもよい。炭素数が9以下である飽和脂肪酸の例としては、酢酸(炭素数2)、プロピオン酸(炭素数3)、酪酸及びイソ酪酸(炭素数4)、吉草酸及びイソ吉草酸(炭素数5)、カプロン酸(炭素数6)、エナント酸及びイソエナント酸(炭素数7)、カプリル酸及びイソカプリル酸及びイソカプロン酸(炭素数8)、並びに、ノナン酸及びイソノナン酸(炭素数9)が挙げられる。炭素数が9以下である不飽和脂肪酸の例としては、上記の飽和脂肪酸の炭化水素基中に1つ以上の二重結合を有するものが挙げられる。 The number of carbon atoms in the fatty acid may be 9 or less. Examples of saturated fatty acids having 9 or less carbon atoms include acetic acid (2 carbon atoms), propionic acid (3 carbon atoms), butyric acid and isobutyric acid (4 carbon atoms), valeric acid and isovaleric acid (5 carbon atoms). , caproic acid (6 carbon atoms), enanthic acid and isoenanthic acid (7 carbon atoms), caprylic acid, isocaproic acid and isocaproic acid (8 carbon atoms), and nonanoic acid and isononanoic acid (9 carbon atoms). Examples of unsaturated fatty acids having 9 or less carbon atoms include those having one or more double bonds in the hydrocarbon group of the above saturated fatty acids.
脂肪酸の種類は、被覆銅粒子の分散媒への分散性、融着性等の性質に影響し得る。粒子形状の均一化の観点からは、炭素数が5~9である脂肪酸と、炭素数が4以下である脂肪酸とを併用してもよい。例えば、炭素数が9であるノナン酸と、炭素数が2である酢酸とを併用してもよい。炭素数が5~9である脂肪酸と炭素数が4以下である脂肪酸とを併用する場合のそれらの比率は、特に制限されない。 The type of fatty acid can affect properties such as the dispersibility of the coated copper particles in the dispersion medium and the fusion bondability. From the viewpoint of making the particle shape uniform, a fatty acid having 5 to 9 carbon atoms and a fatty acid having 4 or less carbon atoms may be used in combination. For example, nonanoic acid having 9 carbon atoms and acetic acid having 2 carbon atoms may be used in combination. When a fatty acid having 5 to 9 carbon atoms and a fatty acid having 4 or less carbon atoms are used in combination, their ratio is not particularly limited.
脂肪酸銅を得る方法は特に制限されず、例えば、水酸化銅と脂肪酸とを溶媒中で反応せせる方法により得てもよい。市販の脂肪酸銅を用いてもよい。あるいは、水酸化銅、脂肪酸及び還元性化合物を溶媒中で混合することで、脂肪酸銅の生成と、脂肪酸銅と還元性化合物との間で形成される錯体の生成とを同じ工程中で行ってもよい。 The method of obtaining fatty acid copper is not particularly limited, and for example, it may be obtained by a method of reacting copper hydroxide and fatty acid in a solvent. Commercially available fatty acid copper may be used. Alternatively, copper hydroxide, a fatty acid and a reducing compound are mixed in a solvent to form a fatty acid copper and a complex formed between the fatty acid copper and the reducing compound in the same step. good too.
還元性化合物は、脂肪酸銅と反応して錯体等の複合化合物を形成すると考えられる。還元性化合物が脂肪酸銅中の銅イオンに対する電子のドナーとして機能し、それにより銅イオンが還元され易くなると考えられる。そのため、複合化合物を形成している脂肪酸銅は、複合化合物を形成していない状態の脂肪酸銅の場合と比較して、自発的な熱分解による銅原子の遊離を生じさせ易いと考えられる。 It is believed that the reducing compound reacts with the fatty acid copper to form a complex compound such as a complex. It is believed that the reducing compound functions as an electron donor to the copper ions in the fatty acid copper, thereby facilitating the reduction of the copper ions. Therefore, fatty acid copper that forms a complex compound is more likely to liberate copper atoms due to spontaneous thermal decomposition than fatty acid copper that does not form a complex compound.
還元性化合物は1種を単独で用いても、2種以上を併用してもよい。還元性化合物の例としては、ヒドラジン、ヒドラジン誘導体、塩酸ヒドラジン、硫酸ヒドラジン、及び抱水ヒドラジン等のヒドラジン化合物;ヒドロキシルアミン、及びヒドロキシルアミン誘導体等のヒドロキシルアミン化合物;並びに、水素化ホウ素ナトリウム、亜硫酸ナトリウム、亜硫酸水素ナトリウム、チオ硫酸ナトリウム、及び次亜リン酸ナトリウム等のナトリウム化合物を挙げることができる。 One reducing compound may be used alone, or two or more thereof may be used in combination. Examples of reducing compounds include hydrazine compounds such as hydrazine, hydrazine derivatives, hydrazine hydrochloride, hydrazine sulfate, and hydrazine hydrate; hydroxylamine compounds such as hydroxylamine and hydroxylamine derivatives; and sodium borohydride, sodium sulfite. , sodium bisulfite, sodium thiosulfate, and sodium hypophosphite.
脂肪酸銅の構造を維持した状態で錯体を形成しやすい等の観点から、アミノ基を有する還元性化合物を用いてもよい。アミノ基を有する還元性化合物は、例えば、ヒドラジン及びその誘導体、並びに、ヒドロキシルアミン及びその誘導体から選ばれる化合物であってもよい。これらの還元性化合物は、窒素原子が銅原子との配位結合を形成することにより錯体を形成することができる。これらの還元性化合物は一般に脂肪族アミンと比較して還元力が強いため、生成した錯体が比較的穏和な条件で自発的な分解を生じ、銅原子の還元及び遊離が生じる傾向にある。そのため、脂肪酸銅、還元性化合物及び脂肪族アミンを含む混合物を加熱する工程における加熱温度を、例えば、脂肪族アミンの蒸発又は分解を生じない低い温度(例えば150℃以下)とすることができる。 A reducing compound having an amino group may be used from the viewpoint of facilitating the formation of a complex while maintaining the structure of the fatty acid copper. A reducing compound having an amino group may be, for example, a compound selected from hydrazine and its derivatives, and hydroxylamine and its derivatives. These reducing compounds can form a complex by forming a coordinate bond between a nitrogen atom and a copper atom. Since these reducing compounds generally have stronger reducing power than aliphatic amines, the resulting complex tends to spontaneously decompose under relatively mild conditions, resulting in reduction and liberation of copper atoms. Therefore, the heating temperature in the step of heating the mixture containing the fatty acid copper, the reducing compound and the aliphatic amine can be, for example, a low temperature (e.g. 150°C or less) that does not cause evaporation or decomposition of the aliphatic amine.
ヒドラジン誘導体及びヒドロキシルアミン誘導体を用いることにより、脂肪酸銅との反応性を調節して、所望の条件で自発分解を生じる錯体を生成させることができる。ヒドラジン誘導体の例としては、メチルヒドラジン、エチルヒドラジン、n-プロピルヒドラジン、イソプロピルヒドラジン、n-ブチルヒドラジン、イソブチルヒドラジン、sec-ブチルヒドラジン、t-ブチルヒドラジン、n-ペンチルヒドラジン、イソペンチルヒドラジン、neo-ペンチルヒドラジン、t-ペンチルヒドラジン、n-ヘキシルヒドラジン、イソヘキシルヒドラジン、n-ヘプチルヒドラジン、n-オクチルヒドラジン、n-ノニルヒドラジン、n-デシルヒドラジン、n-ウンデシルヒドラジン、n-ドデシルヒドラジン、シクロヘキシルヒドラジン、フェニルヒドラジン、4-メチルフェニルヒドラジン、ベンジルヒドラジン、2-フェニルエチルヒドラジン、2-ヒドラジノエタノール、及びアセトヒドラジンが挙げられる。ヒドロキシルアミンの誘導体の例としては、N,N-ジ(スルホエチル)ヒドロキシルアミン、モノメチルヒドロキシルアミン、ジメチルヒドロキシルアミン、モノエチルヒドロキシルアミン、ジエチルヒドロキシルアミン、及びN,N-ジ(カルボキシエチル)ヒドロキシルアミンが挙げられる。 By using a hydrazine derivative and a hydroxylamine derivative, it is possible to adjust the reactivity with fatty acid copper to form a complex that undergoes spontaneous decomposition under desired conditions. Examples of hydrazine derivatives include methylhydrazine, ethylhydrazine, n-propylhydrazine, isopropylhydrazine, n-butylhydrazine, isobutylhydrazine, sec-butylhydrazine, t-butylhydrazine, n-pentylhydrazine, isopentylhydrazine, neo- Pentylhydrazine, t-pentylhydrazine, n-hexylhydrazine, isohexylhydrazine, n-heptylhydrazine, n-octylhydrazine, n-nonylhydrazine, n-decylhydrazine, n-undecylhydrazine, n-dodecylhydrazine, cyclohexylhydrazine , phenylhydrazine, 4-methylphenylhydrazine, benzylhydrazine, 2-phenylethylhydrazine, 2-hydrazinoethanol, and acetohydrazine. Examples of derivatives of hydroxylamine are N,N-di(sulfoethyl)hydroxylamine, monomethylhydroxylamine, dimethylhydroxylamine, monoethylhydroxylamine, diethylhydroxylamine and N,N-di(carboxyethyl)hydroxylamine. mentioned.
脂肪酸銅に含まれる銅と還元性化合物の比率は、所望の錯体が形成される条件であれば特に制限されない。例えば、銅:還元性化合物のモル比が1:1~1:4、1:1~1:3、又は1:1~1:2であってもよい。 The ratio of the copper contained in the fatty acid copper and the reducing compound is not particularly limited as long as the desired complex is formed. For example, the copper:reducing compound molar ratio may be from 1:1 to 1:4, from 1:1 to 1:3, or from 1:1 to 1:2.
脂肪族アミンは、脂肪酸銅と還元性化合物とから形成される錯体の分解反応の反応媒として機能すると考えられる。脂肪族アミンは、更に、還元性化合物の還元作用によって生じるプロトンを捕捉し、反応溶液が酸性に傾いて銅原子が酸化されることを抑制すると考えられる。 The aliphatic amine is believed to function as a reaction medium for the decomposition reaction of the complex formed from the fatty acid copper and the reducing compound. Further, the aliphatic amine is thought to capture protons generated by the reducing action of the reducing compound, thereby suppressing oxidation of the copper atoms due to acidification of the reaction solution.
脂肪族アミンは、RNH2(Rは置換基を有していてもよい直鎖状、分岐状又は環状の脂肪族基を示す。)で表される1級アミン、R1R2NH(R1及びR2はそれぞれ独立に置換基を有していてもよい直鎖状、分岐状又は環状の脂肪族基を示す。)で表される2級アミン、脂肪族基及びこれを置換する2つのアミノ基を有するアルキレンジアミン、又はこれらの組み合わせであってもよい。脂肪族アミンは、1つ以上の二重結合を含む脂肪族基を有していてもよく、酸素、ケイ素、窒素、イオウ、リン等の原子を含む置換基を有していてもよい。脂肪族アミンは、1種のみであっても2種以上であってもよい。 Aliphatic amines are primary amines represented by RNH 2 (R represents an optionally substituted linear, branched or cyclic aliphatic group), R 1 R 2 NH (R 1 and R 2 each independently represent an optionally substituted linear, branched or cyclic aliphatic group. alkylenediamine having one amino group, or a combination thereof. Aliphatic amines may have aliphatic groups containing one or more double bonds and may have substituents containing atoms such as oxygen, silicon, nitrogen, sulfur, phosphorus, and the like. Aliphatic amines may be used alone or in combination of two or more.
1級アミンの例としては、エチルアミン、2-エトキシエチルアミン、プロピルアミン、ブチルアミン、イソブチルアミン、ペンチルアミン、イソペンチルアミン、ヘキシルアミン、シクロヘキシルアミン、ヘプチルアミン、オクチルアミン、ノニルアミン、デシルアミン、ドデシルアミン、ヘキサデシルアミン、オレイルアミン、3-メトキシプロピルアミン、4-メトキシブチルアミン、及び3-エトキシプロピルアミンが挙げられる。 Examples of primary amines include ethylamine, 2-ethoxyethylamine, propylamine, butylamine, isobutylamine, pentylamine, isopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, hexa Decylamine, oleylamine, 3-methoxypropylamine, 4-methoxybutylamine, and 3-ethoxypropylamine.
2級アミンの例としては、ジエチルアミン、ジプロピルアミン、ジブチルアミン、エチルプロピルアミン、エチルペンチルアミン、ジブチルアミン、ジペンチルアミン、及びジヘキシルアミンが挙げられる。 Examples of secondary amines include diethylamine, dipropylamine, dibutylamine, ethylpropylamine, ethylpentylamine, dibutylamine, dipentylamine, and dihexylamine.
アルキレンジアミンの例としては、エチレンジアミン、N,N-ジメチルエチレンジアミン、N,N’-ジメチルエチレンジアミン、N,N-ジエチルエチレンジアミン、N,N’-ジエチルエチレンジアミン、1,3-プロパンジアミン、2,2-ジメチル-1,3-プロパンジアミン、N,N-ジメチル-1,3-ジアミノプロパン、N,N’-ジメチル-1,3-ジアミノプロパン、N,N-ジエチル-1,3-ジアミノプロパン、1,4-ジアミノブタン、1,5-ジアミノ-2-メチルペンタン、1,6-ジアミノへキサン、N,N’-ジメチル-1,6-ジアミノへキサン、1,7-ジアミノヘプタン、1,8-ジアミノオクタン、1,9-ジアミノノナン、及び1,12-ジアミノドデカンが挙げられる。 Examples of alkylenediamines include ethylenediamine, N,N-dimethylethylenediamine, N,N'-dimethylethylenediamine, N,N-diethylethylenediamine, N,N'-diethylethylenediamine, 1,3-propanediamine, 2,2- dimethyl-1,3-propanediamine, N,N-dimethyl-1,3-diaminopropane, N,N'-dimethyl-1,3-diaminopropane, N,N-diethyl-1,3-diaminopropane, 1 ,4-diaminobutane, 1,5-diamino-2-methylpentane, 1,6-diaminohexane, N,N'-dimethyl-1,6-diaminohexane, 1,7-diaminoheptane, 1,8 -diaminooctane, 1,9-diaminononane, and 1,12-diaminododecane.
脂肪族アミンの脂肪族基の炭素数は、7以下であってもよい。脂肪族アミンの脂肪族基の炭素数が7以下であると、脂肪族アミンが熱分解し易いため、低温での焼結により良好な導電性を有する導体が形成され易い傾向がある。脂肪族アミンの脂肪族基の炭素数は6以下であってもよく、3以上であってもよい。炭素数7以下の脂肪族基を有する脂肪族アミンと、炭素数8以上の脂肪族基を有する脂肪族アミンと併用してもよい。その場合、脂肪族アミン全体に占める炭素数7以下の脂肪族基を有する脂肪族アミンの割合が50質量%以上、60質量%以上、又は70質量%以上であってもよい。 The number of carbon atoms in the aliphatic group of the aliphatic amine may be 7 or less. When the number of carbon atoms in the aliphatic group of the aliphatic amine is 7 or less, the aliphatic amine is likely to be thermally decomposed, so that sintering at a low temperature tends to easily form a conductor having good electrical conductivity. The number of carbon atoms in the aliphatic group of the aliphatic amine may be 6 or less, or 3 or more. An aliphatic amine having an aliphatic group with 7 or less carbon atoms and an aliphatic amine having an aliphatic group with 8 or more carbon atoms may be used in combination. In that case, the ratio of the aliphatic amine having an aliphatic group having 7 or less carbon atoms to the whole aliphatic amine may be 50% by mass or more, 60% by mass or more, or 70% by mass or more.
脂肪酸銅に含まれる銅と脂肪族アミンとの比率は、特に制限されない。例えば、銅:脂肪族アミンのモル比が1:1~1:8、1:1~1:6、又は1:1~1:4であってもよい。 The ratio of copper and aliphatic amine contained in fatty acid copper is not particularly limited. For example, the copper:aliphatic amine molar ratio may be from 1:1 to 1:8, from 1:1 to 1:6, or from 1:1 to 1:4.
脂肪酸銅、還元性化合物及び脂肪族アミンを含む、被覆金属粒子を形成するための混合物は、溶媒を更に含んでもよい。脂肪酸銅と還元性化合物による錯体の形成を促進する観点からは、混合物が極性溶媒を含んでいてもよい。ここで極性溶媒とは、25℃で水に溶解する溶媒を意味する。極性溶媒がアルコールであってもよい。アルコールを用いることで錯体の形成が促進される傾向にある。その理由は明らかではないが、固体である脂肪酸銅を溶解させながら水溶性である還元性化合物との接触が促進されるためと考えられる。溶媒は1種を単独で用いても、2種以上を併用してもよい。 The mixture for forming coated metal particles comprising fatty acid copper, reducing compound and fatty amine may further comprise a solvent. The mixture may contain a polar solvent from the viewpoint of promoting the formation of a complex between the fatty acid copper and the reducing compound. Here, a polar solvent means a solvent that dissolves in water at 25°C. The polar solvent may be alcohol. The use of alcohol tends to promote formation of the complex. Although the reason for this is not clear, it is believed that contact with the water-soluble reducing compound is promoted while dissolving the solid fatty acid copper. A solvent may be used individually by 1 type, or may use 2 or more types together.
25℃で水に溶解するアルコールは、例えば、炭素数が1~8で水酸基を1つ有するアルコールであってもよい。このようなアルコールの例としては、直鎖状のアルキルアルコール、フェノール、2以上の炭化水素基及びこれらを結合するエーテル結合と水酸基とを有する化合物が挙げられる。より強い極性を発現する観点からは、2以上の水酸基を有するアルコールを用いてもよい。また、イオウ原子、リン原子、ケイ素原子等を含むアルコールを用いてもよい。 The alcohol that dissolves in water at 25° C. may be, for example, an alcohol having 1 to 8 carbon atoms and one hydroxyl group. Examples of such alcohols include straight-chain alkyl alcohols, phenols, compounds having two or more hydrocarbon groups, an ether bond connecting them, and a hydroxyl group. From the viewpoint of expressing stronger polarity, an alcohol having two or more hydroxyl groups may be used. Alternatively, an alcohol containing a sulfur atom, a phosphorus atom, a silicon atom, or the like may be used.
アルコールの例としては、メタノール、エタノール、1-プロパノール、2-プロパノール、ブタノール、ペンタノール、ヘキサノール、ヘプタノール、オクタノール、アリルアルコール、ベンジルアルコール、ピナコール、プロピレングリコール、メントール、カテコール、ヒドロキノン、サリチルアルコール、グリセリン、ペンタエリスリトール、スクロース、グルコース、キシリトール、メトキシエタノール、トリエチレングリコールモノメチルエーテル、エチレングリコール、トリエチレングリコール、テトラエチレングリコール、及びペンタエチレングリコールが挙げられる。アルコールは、メタノール、エタノール、1-プロパノール及び2-プロパノール、又は、1-プロパノール及び2-プロパノールから選択してもよく、1-プロパノールを選択してもよい。 Examples of alcohols include methanol, ethanol, 1-propanol, 2-propanol, butanol, pentanol, hexanol, heptanol, octanol, allyl alcohol, benzyl alcohol, pinacol, propylene glycol, menthol, catechol, hydroquinone, salicyl alcohol, glycerin. , pentaerythritol, sucrose, glucose, xylitol, methoxyethanol, triethylene glycol monomethyl ether, ethylene glycol, triethylene glycol, tetraethylene glycol, and pentaethylene glycol. The alcohol may be selected from methanol, ethanol, 1-propanol and 2-propanol, or 1-propanol and 2-propanol, optionally 1-propanol.
脂肪酸銅、還元性化合物及び脂肪族アミンを含む混合物を加熱する工程を実施するための方法は特に制限されない。その例としては、脂肪酸銅及び還元性化合物を溶媒と混合し、得られた混合物に脂肪族アミンを更に添加して、混合物を加熱する方法、脂肪酸銅及び脂肪族アミンを溶媒と混合し、得られた混合物に還元性化合物を更に添加して、混合物を加熱する方法、水酸化銅、脂肪酸、還元性化合物及び脂肪族アミンを溶媒と混合し、得られた混合物を加熱する方法が挙げられる。 The method for carrying out the step of heating the mixture containing the fatty acid copper, the reducing compound and the fatty amine is not particularly limited. Examples include a method of mixing a fatty acid copper and a reducing compound with a solvent, further adding an aliphatic amine to the resulting mixture, and heating the mixture; mixing fatty acid copper and an aliphatic amine with a solvent; A method of further adding a reducing compound to the obtained mixture and heating the mixture, and a method of mixing copper hydroxide, fatty acid, reducing compound and aliphatic amine with a solvent and heating the resulting mixture.
加熱温度は、例えば、150℃以下、130℃以下、又は100℃以下であってもよい。炭素数が9以下である脂肪酸銅を用いることにより、比較的低温で被覆金属粒子を形成することができる。 The heating temperature may be, for example, 150° C. or lower, 130° C. or lower, or 100° C. or lower. By using fatty acid copper having 9 or less carbon atoms, coated metal particles can be formed at a relatively low temperature.
銅含有粒子の形状としては、特に制限されないが、例えば、球状、略球状、多面体状、針状、フレーク状、ロッド状等が挙げられる。 The shape of the copper-containing particles is not particularly limited, and examples thereof include spherical, approximately spherical, polyhedral, needle-like, flake-like, and rod-like.
銅含有粒子は、形状の異なる2種以上の銅含有粒子を含んでいてもよい。形状の異なる2種以上の銅含有粒子を含むことによって、形成される導電膜のひび割れが抑制され、かつ充分な厚みを有する導電膜を形成し易くなる傾向にある。この理由は必ずしも定かではないが、異なる2種以上の銅含有粒子が互いに隙間を補完し、銅含有粒子同士の融着等による体積減少の全方位的な発生が抑制されるためであると考えられる。これにより、充分な厚みを有する導電膜においても、ひび割れが抑制されると推察される。 The copper-containing particles may contain two or more kinds of copper-containing particles having different shapes. Inclusion of two or more types of copper-containing particles having different shapes tends to suppress cracking of the formed conductive film and facilitate formation of a conductive film having a sufficient thickness. The reason for this is not necessarily clear, but it is believed that two or more different types of copper-containing particles complement each other to suppress the omnidirectional occurrence of volume reduction due to fusion between the copper-containing particles. be done. It is presumed that this suppresses cracking even in a conductive film having a sufficient thickness.
形状の異なる銅含有粒子の組み合わせとしては、例えば、球状の銅含有粒子(A)と扁平状の銅含有粒子(B)との組み合わせであることが好ましい。 As a combination of copper-containing particles having different shapes, for example, a combination of spherical copper-containing particles (A) and flat copper-containing particles (B) is preferable.
球状の銅含有粒子(A)は、真球状又は略球状であればよく、そのアスペクト比(長径/短径)は1~1.2であってもよい。本明細書において、「扁平状」は、アスペクト比がある程度大きい形状であることを意味し、楕円体又はこれに近い形状のような長粒状の他、フレーク状、鱗片状のような平板状の形状も包含する用語として用いられる。扁平状の銅含有粒子のアスペクト比は、3~10であってもよい。球状の銅含有粒子及び扁平状の銅含有粒子は、全体として球状又は扁平状であればよく、その表面に微小な凹凸を有していてもよい。 The spherical copper-containing particles (A) may be spherical or substantially spherical, and may have an aspect ratio (major axis/minor axis) of 1 to 1.2. In this specification, "flat shape" means a shape with a relatively large aspect ratio, and in addition to long grains such as ellipsoids or shapes similar thereto, flat plates such as flakes and scales It is used as a term that also includes shape. The flattened copper-containing particles may have an aspect ratio of 3-10. The spherical copper-containing particles and the flat copper-containing particles may be spherical or flat as a whole, and may have fine irregularities on their surfaces.
球状の銅含有粒子(A)のメジアン径又はモード径は、0.1~2.0μm、0.1~1.2μm、0.3~0.9μm、又は0.1~0.6μmであってもよい。扁平状の銅含有粒子(B)のメジアン径又はモード径は、0.03~9.0μm、0.03~7.0μm、0.03~4.0μm、又は0.03~2.5μmであってもよい。このようなメジアン径又はモード径を有する球状の銅含有粒子(A)と扁平状の銅含有粒子(B)とを組み合わせることによって、低温での融着性により優れる傾向にある。 The median diameter or mode diameter of the spherical copper-containing particles (A) is 0.1 to 2.0 μm, 0.1 to 1.2 μm, 0.3 to 0.9 μm, or 0.1 to 0.6 μm. may The flat copper-containing particles (B) have a median diameter or mode diameter of 0.03 to 9.0 μm, 0.03 to 7.0 μm, 0.03 to 4.0 μm, or 0.03 to 2.5 μm. There may be. By combining the spherical copper-containing particles (A) and the flat copper-containing particles (B) having such a median diameter or mode diameter, there is a tendency for excellent low-temperature fusion bondability.
本明細書において、銅含有粒子のメジアン径は、レーザー折式粒度分布計(例えば、サブミクロン粒子アナライザN5 PLUS(ベックマン・コールター社)等)で測定したD50の値(体積分布の累積中央値)を意味する。モード径は、同様の方法で得られる粒径の累積分布(粒度分布)における最大の極大値が観測される粒径を意味する。銅含有粒子が上述の被覆銅粒子であるとき、銅含有粒子のメジアン径又はモード径は、有機被覆層を含む粒子全体の粒径の累積分布におけるメジアン径又はモード径を意味する。 In the present specification, the median diameter of the copper-containing particles is the D50 value (cumulative median volume distribution) measured with a laser diffraction particle size distribution meter (e.g., Submicron Particle Analyzer N5 PLUS (Beckman Coulter)). means The mode diameter means the particle diameter at which the maximum maximum value is observed in the cumulative distribution of particle diameters (particle size distribution) obtained by a similar method. When the copper-containing particles are the coated copper particles described above, the median diameter or mode diameter of the copper-containing particles means the median diameter or mode diameter in the cumulative distribution of the particle diameters of the entire particles including the organic coating layer.
銅含有粒子は、所定のメジアン径又はモード径を有する銅粒子の市販品を用いることができる。被覆銅粒子のメジアン径及びモード径は、例えば、上述の製造方法における原材料の種類、原材料を混合する際の温度、反応時間、反応温度、洗浄工程、洗浄溶媒等の条件を調節することによって、調整することができる。 As the copper-containing particles, commercially available copper particles having a predetermined median diameter or mode diameter can be used. The median diameter and mode diameter of the coated copper particles can be adjusted, for example, by adjusting conditions such as the type of raw materials in the above-described production method, the temperature when mixing the raw materials, the reaction time, the reaction temperature, the washing process, and the washing solvent. can be adjusted.
導体形成用組成物における扁平状の銅含有粒子(B)の含有量に対する球状の銅含有粒子(A)の含有量の比[球状の銅含有粒子(A)の含有量]/[扁平状の銅含有粒子(B)の含有量]は、0.25~4.0、0.3~3.0、又は0.4~2.5であってもよい。扁平状の銅含有粒子(B)の含有量に対する球状の銅含有粒子(A)の含有量の割合がこのような範囲であると、導電膜のひび割れがより抑制される傾向にある。 Ratio of the content of the spherical copper-containing particles (A) to the content of the flat copper-containing particles (B) in the conductor-forming composition [content of the spherical copper-containing particles (A)] / [flat content of copper-containing particles (B)] may be 0.25 to 4.0, 0.3 to 3.0, or 0.4 to 2.5. When the ratio of the content of the spherical copper-containing particles (A) to the content of the flat copper-containing particles (B) is within this range, cracking of the conductive film tends to be more suppressed.
導体形成用組成物は、銅含有粒子以外の金属粒子を含んでいてもよい。金属粒子を構成する金属成分としては、例えば、銀、ニッケル、ベリリウム、白金、コバルト、アンチモン、ゲルマニウム、タリウム、イリジウム、亜鉛、ニオブ、金、パラジウム、カドミウム、ルテニウム、チタン、インジウム、タングステン、モリブデン、アルミニウム、鉛、ビスマス、ロジウム、クロム、スズ、鉄、バナジウム、マンガン等の導電性を有する金属成分、又はこれらの金属成分を含む合金を挙げることができる。金属成分は、導電性の観点から、金及び銀並びにこれらの金属を含む合金からなる群より選択される少なくとも一種を用いることができ、耐酸化性の観点から、金及び銀、並びにこれらの金属を含む合金からなる群より選択される少なくとも一種を用いることができる。 The conductor-forming composition may contain metal particles other than the copper-containing particles. Examples of metal components constituting metal particles include silver, nickel, beryllium, platinum, cobalt, antimony, germanium, thallium, iridium, zinc, niobium, gold, palladium, cadmium, ruthenium, titanium, indium, tungsten, molybdenum, Conductive metal components such as aluminum, lead, bismuth, rhodium, chromium, tin, iron, vanadium and manganese, or alloys containing these metal components can be mentioned. The metal component can be at least one selected from the group consisting of gold and silver and alloys containing these metals from the viewpoint of conductivity, and gold and silver and these metals from the viewpoint of oxidation resistance At least one selected from the group consisting of alloys containing can be used.
導体形成用組成物における銅含有粒子の含有量は、組成物全量を基準として、20~80質量%であってもよい。銅含有粒子の含有量が、組成物全量を基準として20質量%以上であると、より充分な厚みを有する導電膜を形成できる傾向にあり、80質量%以下であると、種々の方法で金属粒子含有層を形成しやすくなる傾向にある。銅含有粒子の含有量は、組成物全量を基準として、30質量%以上、40質量%以上、又は50質量%以上であってもよく、75質量部以下、70質量部以下、又は65質量部以下であってもよい。 The content of the copper-containing particles in the conductor-forming composition may be 20 to 80% by mass based on the total amount of the composition. When the content of the copper-containing particles is 20% by mass or more based on the total amount of the composition, it tends to be possible to form a conductive film having a sufficient thickness. It tends to facilitate the formation of the particle-containing layer. The content of the copper-containing particles may be 30% by mass or more, 40% by mass or more, or 50% by mass or more, based on the total amount of the composition, and is 75% by mass or less, 70% by mass or less, or 65% by mass. It may be below.
導体形成用組成物に含まれる分散媒は、特に制限されず、導体形成用組成物の用途に応じて一般に用いられる有機溶媒から1種又は2種以上を選択できる。導体形成組成物の粘度コントロールの観点から、分散媒は、テルピネオール、イソボルニルシクロヘキサノール、ジヒドロターピネオール及びジヒドロターピネオールアセテートからなる群より選択される少なくとも1種を含んでいてもよい。これらを含む導体形成用組成物は、印刷法に適した粘度を有し易い。 The dispersion medium contained in the conductor-forming composition is not particularly limited, and one or more organic solvents can be selected according to the application of the conductor-forming composition. From the viewpoint of viscosity control of the conductor-forming composition, the dispersion medium may contain at least one selected from the group consisting of terpineol, isobornylcyclohexanol, dihydroterpineol and dihydroterpineol acetate. A conductor-forming composition containing these tends to have a viscosity suitable for a printing method.
導体形成用組成物の粘度は特に制限されず、金属粒子含有層を形成する方法に応じて選択できる。例えば、導体形成用組成物をバーコート法に適用する場合、導体形成用組成物の粘度が0.1~30Pa・s、又は1~10Pa・sであってもよい。導体形成用組成物の粘度は、E型粘度計(例えば、東機産業株式会社製、製品名:VISCOMETER-TV33、適用コーンプレート型ロータ:SPP)を用いて25℃において測定することができる。 The viscosity of the conductor-forming composition is not particularly limited, and can be selected according to the method of forming the metal particle-containing layer. For example, when the conductor-forming composition is applied to the bar coating method, the viscosity of the conductor-forming composition may be 0.1 to 30 Pa·s, or 1 to 10 Pa·s. The viscosity of the conductor-forming composition can be measured at 25° C. using an E-type viscometer (eg, manufactured by Toki Sangyo Co., Ltd., product name: VISCOMETER-TV33, applicable cone-plate rotor: SPP).
導体形成用組成物は、必要に応じて銅含有粒子及び分散媒以外の成分を含んでもよい。このような成分の例としては、シランカップリング剤、高分子化合物、ラジカル開始剤、及び還元剤が挙げられる。 The conductor-forming composition may optionally contain components other than the copper-containing particles and the dispersion medium. Examples of such components include silane coupling agents, polymeric compounds, radical initiators, and reducing agents.
導体形成用組成物は、銅含有粒子を分散媒中に分散させる方法により得ることができる。 The conductor-forming composition can be obtained by a method of dispersing copper-containing particles in a dispersion medium.
導体形成用組成物を用いて樹脂組成物層上に金属粒子含有層を形成する方法としては、インクジェット法、スーパーインクジェット法、スクリーン印刷法、転写印刷法、オフセット印刷法、ジェットプリンティング法、ディスペンス法、ジェットディスペンス法、ニードルディスペンス法、カンマコート法、バーコート法、スリットコート法、ダイコート法、グラビアコート法、凸版印刷法、凹版印刷法、グラビア印刷法、ソフトリソグラフ法、ディップペンリソグラフ法、粒子堆積法、スプレーコート法、スピンコート法、ディップコート法、電着塗装法等を挙げることができる。 Examples of methods for forming a metal particle-containing layer on a resin composition layer using a conductor-forming composition include an inkjet method, a super inkjet method, a screen printing method, a transfer printing method, an offset printing method, a jet printing method, and a dispensing method. , jet dispensing method, needle dispensing method, comma coating method, bar coating method, slit coating method, die coating method, gravure coating method, relief printing method, intaglio printing method, gravure printing method, soft lithography method, dip pen lithography method, particles A deposition method, a spray coating method, a spin coating method, a dip coating method, an electrodeposition coating method, and the like can be mentioned.
金属粒子含有層の形状は特に制限されず、目的に応じて適宜選択することができる。金属粒子含有層の厚みは、目的に応じて適宜設定することができるが、例えば0.2μm~50μmであってもよい。形成される導電膜の導電性及び接続信頼性の観点から、金属粒子含有層の厚みは0.8μm~20μmであることがより好ましい。 The shape of the metal particle-containing layer is not particularly limited, and can be appropriately selected depending on the purpose. The thickness of the metal particle-containing layer can be appropriately set depending on the purpose, and may be, for example, 0.2 μm to 50 μm. From the viewpoint of the conductivity and connection reliability of the conductive film to be formed, the thickness of the metal particle-containing layer is more preferably 0.8 μm to 20 μm.
樹脂組成物層の厚みと金属粒子含有層の厚みとの比率は、目的に応じて適宜設定することができるが、例えば[樹脂組成物層の厚み]/[金属粒子含有層の厚み]が0.1~0.7であってもよく、密着性の観点から、0.15~0.6であることが好ましい。 The ratio of the thickness of the resin composition layer to the thickness of the metal particle-containing layer can be appropriately set according to the purpose. 0.1 to 0.7, preferably 0.15 to 0.6 from the viewpoint of adhesion.
(工程S3)
工程S3では、樹脂組成物層及び金属粒子含有層を加熱することにより、基材上に、樹脂組成物層の硬化物(樹脂硬化物)を形成するとともに、銅含有粒子を焼結させて導体化し、樹脂硬化物上に銅含有粒子の焼結体を含む導電膜を形成する。これにより、樹脂組成物層の硬化物によって基材に接着された導電膜が得られる。なお、金属粒子含有層が被覆銅粒子を含む場合、加熱により銅を含むコア粒子の表面を被覆する有機物が除去され、コア粒子同士が接触することで導体化が達成され得る。
(Step S3)
In step S3, by heating the resin composition layer and the metal particle-containing layer, a cured product of the resin composition layer (cured resin product) is formed on the substrate, and the copper-containing particles are sintered to form a conductor. to form a conductive film containing a sintered body of copper-containing particles on the cured resin. As a result, a conductive film is obtained that is adhered to the base material by the cured product of the resin composition layer. When the metal particle-containing layer contains coated copper particles, heating removes the organic substance covering the surfaces of the copper-containing core particles, and the core particles come into contact with each other to achieve conductivity.
加熱温度は、120℃以上であってもよく、250℃以下、230℃以下であってもよい。加熱温度が120℃以上であると、基材との接着性が充分な樹脂硬化物を容易に形成することができるとともに、充分な導電性を有する導電膜が得られやすくなる。 The heating temperature may be 120° C. or higher, 250° C. or lower, or 230° C. or lower. When the heating temperature is 120° C. or higher, a cured resin product having sufficient adhesiveness to the substrate can be easily formed, and a conductive film having sufficient conductivity can be easily obtained.
加熱温度は、一定でも、規則的又は不規則に変化してもよい。加熱の時間は特に制限されず、加熱温度、加熱雰囲気、銅含有粒子の量等を考慮して選択できる。充分な導電性と量産性とを両立する観点から、加熱時間は5分~120分であることが好ましい。加熱方法は、特に制限されないが、例えば、熱板、赤外ヒータ、光照射、又はパルスレーザによる加熱であってもよい。 The heating temperature may be constant or may vary regularly or irregularly. The heating time is not particularly limited, and can be selected in consideration of the heating temperature, the heating atmosphere, the amount of copper-containing particles, and the like. From the viewpoint of achieving both sufficient conductivity and mass productivity, the heating time is preferably 5 minutes to 120 minutes. The heating method is not particularly limited, but may be, for example, heating with a hot plate, infrared heater, light irradiation, or pulse laser.
樹脂組成物層及び金属粒子含有層が加熱される雰囲気は、特に制限されないが、窒素、アルゴン等の不活性ガスを含む不活性雰囲気であってもよく、水素、ギ酸等の還元性物質を含む還元雰囲気であってもよく、両者が混合した雰囲気であってもよい。圧力は特に制限されないが、減圧雰囲気で金属粒子含有層を加熱することでより、低温での導体化が促進される傾向がある。なお、不活性ガスは、銅を含有するコア粒子表面の酸化銅の生成を抑制することができ、還元性物質は、銅を含有するコア粒子表面の有機物の脱離を容易にし、銅を含むコア粒子同士の焼結(融着)を促進することができる。 The atmosphere in which the resin composition layer and the metal particle-containing layer are heated is not particularly limited, but may be an inert atmosphere containing an inert gas such as nitrogen and argon, and a reducing substance such as hydrogen and formic acid. It may be a reducing atmosphere or an atmosphere in which both are mixed. Although the pressure is not particularly limited, there is a tendency that heating the metal particle-containing layer in a reduced pressure atmosphere promotes conductivity at a low temperature. The inert gas can suppress the formation of copper oxide on the surface of the copper-containing core particles, and the reducing substance facilitates the detachment of organic substances on the surface of the copper-containing core particles. Sintering (fusion) between core particles can be promoted.
樹脂組成物層及び金属粒子含有層が加熱される雰囲気の圧力は、特に制限されないが、大気圧下であってもよく、減圧下であってもよい。金属粒子含有層を減圧下で加熱することによって、低温での導体化がより促進される傾向にある。 Although the pressure of the atmosphere in which the resin composition layer and the metal particle-containing layer are heated is not particularly limited, it may be under atmospheric pressure or under reduced pressure. Heating the metal particle-containing layer under reduced pressure tends to further promote conductivity at low temperatures.
形成される導電膜の体積抵抗率は、100μΩ・cm以下であってもよく、50μΩ・cm以下であってもよく、20μΩ・cm下であってもよく、10μΩ・cm以下であってもよい。 The volume resistivity of the conductive film to be formed may be 100 μΩ-cm or less, 50 μΩ-cm or less, 20 μΩ-cm or less, or 10 μΩ-cm or less. .
本実施形態の導電性積層体の製造方法は、必要に応じて、その他の工程を含んでいてもよい。その他の工程としては、例えば、工程S3の後に還元雰囲気中で加熱して生成した酸化物を還元する工程、工程S3の後に光焼成で残存成分を除去する工程、工程S3の後に導電膜に荷重をかける工程、工程S3の後に電解めっき又は無電解めっきで増膜する工程等を挙げることができる。 The method for manufacturing the conductive laminate of the present embodiment may include other steps as necessary. Other steps include, for example, a step of reducing oxides generated by heating in a reducing atmosphere after step S3, a step of removing residual components by photobaking after step S3, and a step of applying a load to the conductive film after step S3. and a step of increasing the film thickness by electroplating or electroless plating after step S3.
<導電性積層体>
本実施形態の導電性積層体は上述の導電性積層体の製造方法により得ることができ、導電性積層体は、基材と、該基材上に設けられた導電膜とを備え、導電膜が銅含有粒子の焼結体を含み、基材と導電膜との間に、これらを接着する熱硬化性樹脂組成物の硬化物を有する。本実施形態の導電性積層体は、基材及び硬化物の間並びに硬化物及び導電膜の間が充分な接着性を有することができ、導電膜が導電性を確保しやすいものになり得る。
<Conductive laminate>
The conductive laminate of the present embodiment can be obtained by the above-described method for producing a conductive laminate, and the conductive laminate includes a base material and a conductive film provided on the base material. contains a sintered body of copper-containing particles, and has a cured product of a thermosetting resin composition between the substrate and the conductive film that adheres them. The conductive laminate of the present embodiment can have sufficient adhesiveness between the substrate and the cured product and between the cured product and the conductive film, and the conductive film can easily ensure conductivity.
本実施形態の導電性積層体において、熱硬化性樹脂組成物が、ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂、及び/又は、ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂を含むものであってもよい。この場合、導電性積層体は、導電性及び基材に対する接着性の双方に優れた導電膜を備えることができる。また、樹脂硬化物が柔軟性に富むことから、基材がフィルム等であっても接着性の高い導電性積層体になり得る。 In the conductive laminate of the present embodiment, the thermosetting resin composition is an epoxy resin having a bisphenol skeleton and a linear hydrocarbon group having 4 or more carbon atoms, and/or a bisphenol skeleton and 3 or more ether bonds. It may contain an epoxy resin having a polyoxyalkylene group containing. In this case, the conductive laminate can have a conductive film that is excellent in both conductivity and adhesiveness to the substrate. In addition, since the cured resin product is rich in flexibility, even if the base material is a film or the like, a highly adhesive conductive laminate can be obtained.
導電膜の体積抵抗率は、その用途に応じて適宜設定することができ、500μΩ・cm以下であってもよく、200μΩ・cm以下であってもよく、100μΩ・cm以下であってもよい。 The volume resistivity of the conductive film can be appropriately set according to its application, and may be 500 μΩ·cm or less, 200 μΩ·cm or less, or 100 μΩ·cm or less.
導電膜(焼結体)の形状は、特に制限されず、薄膜状、バンプ状、パターン状等であってもよい。本実施形態の導電性積層体は、種々の電子部品の配線等に使用できる。特に、導電性積層体は低温で製造できるため、耐熱性の低い基材上に金属箔、接続用端子、配線パターン等を形成する用途に好適に用いられる。 The shape of the conductive film (sintered body) is not particularly limited, and may be thin film, bump, pattern, or the like. The conductive laminate of this embodiment can be used for wiring of various electronic components. In particular, since the conductive laminate can be produced at a low temperature, it is suitably used for forming metal foils, connection terminals, wiring patterns, etc. on base materials with low heat resistance.
<2剤型導電膜形成剤>
本実施形態の2剤型導電膜形成剤は、熱硬化性樹脂を含むa剤と、銅含有粒子を含むb剤とを備える。a剤としては、上述した熱硬化性樹脂組成物が挙げられる。b剤としては、上述した導体形成用組成物が挙げられる。
<Two-component conductive film forming agent>
The two-component conductive film-forming agent of the present embodiment comprises a component containing a thermosetting resin and a component b containing copper-containing particles. Examples of agent a include the thermosetting resin composition described above. Examples of the b-agent include the conductor-forming composition described above.
本実施形態の2剤型導電膜形成剤は、上述した本実施形態の導電性積層体の製造方法における樹脂組成物層及び金属粒子含有層を形成するために用いることができる。本実施形態の2剤型導電膜形成剤の使用説明書には、上述した本実施形態の導電性積層体の製造方法における各条件を適宜選択して記載することができる。例えば、樹脂組成物層の厚みと金属粒子含有層の厚みとの比率[樹脂組成物層の厚み]/[金属粒子含有層の厚み]を0.1~0.7に設定するなどの条件を記載することができる。 The two-component conductive film-forming agent of the present embodiment can be used for forming the resin composition layer and the metal particle-containing layer in the above-described method for producing a conductive laminate of the present embodiment. In the instructions for use of the two-pack type conductive film-forming agent of the present embodiment, each condition in the above-described method for producing a conductive laminate of the present embodiment can be appropriately selected and described. For example, the ratio of the thickness of the resin composition layer to the thickness of the metal particle-containing layer [thickness of the resin composition layer]/[thickness of the metal particle-containing layer] is set to 0.1 to 0.7. can be described.
本実施形態の2剤型導電膜形成剤は、耐熱性の低い基材上に金属箔、接続用端子、配線パターン等を形成する用途に好適に用いられる。 The two-component conductive film-forming agent of the present embodiment is suitably used for forming metal foils, connection terminals, wiring patterns, etc. on substrates with low heat resistance.
以下に、本発明を実施例に基づいて具体的に説明するが、本発明はこれらに限定されるものではない。 EXAMPLES The present invention will be specifically described below based on examples, but the present invention is not limited to these.
(実施例1)
[熱硬化性樹脂組成物の調製]
ビスフェノールA骨格及び炭素原子数6の直鎖状炭化水素を有するエポキシ樹脂である「EPICLON EXA4816」(DIC株式会社製、商品名)40質量部を、テルピネオール(和光純薬工業株式会社製)60質量部に溶解させた。この溶液に、硬化剤として「FXR-1081」(T&K TOKA株式会社製、商品名)を、エポキシ樹脂100質量部に対して5質量部の割合で加え、自転公転式撹拌機「あわとり錬太郎」(シンキー株式会社製、商品名)を使用して攪拌し、熱硬化性樹脂組成物を得た。
(Example 1)
[Preparation of thermosetting resin composition]
40 parts by mass of "EPICLON EXA4816" (manufactured by DIC Corporation, trade name), which is an epoxy resin having a bisphenol A skeleton and a linear hydrocarbon having 6 carbon atoms, is mixed with 60 parts by mass of terpineol (manufactured by Wako Pure Chemical Industries, Ltd.). dissolved in parts. To this solution, "FXR-1081" (manufactured by T&K TOKA Co., Ltd., trade name) was added as a curing agent at a rate of 5 parts by mass with respect to 100 parts by mass of the epoxy resin, and a rotation and revolution stirrer "Awatori Rentaro" was added. (manufactured by THINKY Co., Ltd., trade name) and stirred to obtain a thermosetting resin composition.
[導体形成用組成物]
<銅含有粒子の用意>
銅含有粒子として、下記の球状の銅含有粒子(A)と、下記の扁平状の銅含有粒子(B)とを質量比70:30で混合したものを用意した。なお、[(A)の含有量]/[(B)の含有量]が70/30である。
球状の銅含有粒子(A):「CH-0200」(三井金属鉱業株式会社製、製品名、メジアン径(D50):0.15μm)
扁平状の銅含有粒子(B):「1050YF」(三井金属鉱業株式会社製、製品名、メジアン径(D50):1.4μm、アスペクト比(平均):7)
[Conductor-forming composition]
<Preparation of copper-containing particles>
As the copper-containing particles, a mixture of spherical copper-containing particles (A) described below and flat copper-containing particles (B) described below at a mass ratio of 70:30 was prepared. In addition, [content of (A)]/[content of (B)] is 70/30.
Spherical copper-containing particles (A): “CH-0200” (manufactured by Mitsui Mining & Smelting Co., Ltd., product name, median diameter (D50): 0.15 μm)
Flat copper-containing particles (B): “1050YF” (manufactured by Mitsui Mining & Smelting Co., Ltd., product name, median diameter (D50): 1.4 μm, aspect ratio (average): 7)
なお、粒子のメジアン径(D50)は、サブミクロン粒子アナライザN5 PLUS(ベックマン・コールター社製)を用いて測定した。 The median diameter (D50) of the particles was measured using a submicron particle analyzer N5 PLUS (manufactured by Beckman Coulter, Inc.).
<分散媒の用意>
分散媒として、テルピネオール(日本テルペン化学株式会社製)と、イソボルニルシクロヘキサノール(日本テルペン化学株式会社)とを質量比70:30で混合したものを用意した。
<Preparation of dispersion medium>
As a dispersion medium, a mixture of terpineol (manufactured by Nippon Terpene Chemical Co., Ltd.) and isobornylcyclohexanol (Nippon Terpene Chemical Co., Ltd.) at a mass ratio of 70:30 was prepared.
上記で用意した銅含有粒子76質量部に、上記で用意した分散媒24質量部を加え、自転公転式撹拌機「あわとり錬太郎」(シンキー株式会社製、商品名)を使用して攪拌し、導体形成用組成物を得た。 Add 24 parts by mass of the dispersion medium prepared above to 76 parts by mass of the copper-containing particles prepared above, and stir using a rotation-revolution stirrer "Awatori Rentaro" (manufactured by Thinky Co., Ltd., trade name). , to obtain a conductor-forming composition.
[導電性積層体の製造]
<樹脂組成物層の形成>
LCP基材である「スミカスーパーE6007」(住友化学株式会社製、商品名)上に、上述の熱硬化性樹脂組成物を、スピンコータ「1H-DX1」(ミカサ株式会社製、商品名)を用いて、回転数500rpmでスピンコートし、樹脂組成物層を形成した。その後、樹脂組成物層を、80℃のオーブン(大気)で30分間加熱し、乾燥した。乾燥後の樹脂組成物層の厚さは15μmであった。
[Manufacture of conductive laminate]
<Formation of Resin Composition Layer>
The above-mentioned thermosetting resin composition is coated on an LCP substrate "Sumika Super E6007" (manufactured by Sumitomo Chemical Co., Ltd., trade name) using a spin coater "1H-DX1" (manufactured by Mikasa Co., Ltd., trade name). Then, spin coating was performed at a rotation speed of 500 rpm to form a resin composition layer. Thereafter, the resin composition layer was dried by heating in an oven (atmosphere) at 80° C. for 30 minutes. The thickness of the resin composition layer after drying was 15 μm.
<金属粒子含有層の形成>
乾燥後の樹脂組成物層上に、上述の導体形成用組成物を、バーコーター(塗布ギャップ:55μm)を用いて塗布し、金属粒子含有層を形成した。
<Formation of metal particle-containing layer>
On the resin composition layer after drying, the above-described conductor-forming composition was applied using a bar coater (coating gap: 55 μm) to form a metal particle-containing layer.
<導電膜の形成>
上記で形成した樹脂組成物層及び金属粒子含有層を備える基材を、水素焼結接合装置(神港精機株式会社製)に入れ、100%水素雰囲気において225℃で90分間の加熱処理を行った。こうして、LCP基材上に、樹脂硬化物によって接着された、金属銅(焼結銅)の薄膜からなる導電膜が設けられた導電性積層体を得た。
<Formation of conductive film>
The substrate comprising the resin composition layer and the metal particle-containing layer formed above is placed in a hydrogen sintering and bonding apparatus (manufactured by Shinko Seiki Co., Ltd.), and heat-treated at 225 ° C. for 90 minutes in a 100% hydrogen atmosphere. rice field. In this way, a conductive laminate was obtained in which a conductive film made of a thin film of metallic copper (sintered copper) was provided on the LCP base material and adhered by the cured resin.
[導電性積層体の評価]
<体積低効率の測定>
導電膜の体積抵抗率を、4端針面抵抗測定器「ロレスタGP MCP-T610」(株式会社三菱化学アナリテック製、商品名)で測定した面抵抗値と、接触式の段差計「ET200」(株式会社小坂製作所製、商品名)で求めた膜厚とから計算した。結果を表1に示す。
[Evaluation of conductive laminate]
<Measurement of volumetric efficiency>
The volume resistivity of the conductive film is measured with a 4-point stylus surface resistance measuring device “Loresta GP MCP-T610” (manufactured by Mitsubishi Chemical Analytech Co., Ltd., trade name) and the surface resistance value and the contact type step meter “ET200”. (manufactured by Kosaka Seisakusho Co., Ltd., trade name). Table 1 shows the results.
<ピール強度の測定>
導電性積層体における導電膜と基材との90度ピール強度を下記の方法で測定し、導電膜の接着性を評価した。
<Measurement of peel strength>
The 90-degree peel strength between the conductive film and the substrate in the conductive laminate was measured by the following method to evaluate the adhesiveness of the conductive film.
導電性積層体の導電膜を陰極として、含リン銅板を陽極として、硫酸銅、硫酸及び塩酸を含む水溶液中において、2A/dm2で1時間の電解銅めっきを行った。次に、電解銅めっきで厚膜化した金属銅膜を、卓上ピール試験機(商品名:小型卓上試験機EZ-S、株式会社島津製作所)を用いて金属銅膜ピール幅10mm、ピール角度90°、ピール速度50mm/分で基材から剥離し、基材と銅膜の接着力(N/m)を測定した。結果を表1に示す。 Electrolytic copper plating was performed at 2 A/dm 2 for 1 hour in an aqueous solution containing copper sulfate, sulfuric acid and hydrochloric acid, using the conductive film of the conductive laminate as a cathode and the phosphorous copper plate as an anode. Next, the metal copper film thickened by electrolytic copper plating was subjected to a metal copper film peel width of 10 mm and a peel angle of 90 using a desktop peel tester (trade name: small desktop tester EZ-S, Shimadzu Corporation). ° and a peel speed of 50 mm/min, and the adhesive strength (N/m) between the substrate and the copper film was measured. Table 1 shows the results.
(実施例2)
スピンコータの回転数を1000rpmとして樹脂組成物層(乾燥後の厚さ10μm)を形成した以外は、実施例1と同様にして導電性積層体を作製し、同様の評価を行った。結果を表1に示す。
(Example 2)
A conductive laminate was produced in the same manner as in Example 1, except that a resin composition layer (having a thickness of 10 μm after drying) was formed at a spin coater rotation speed of 1000 rpm, and the same evaluation was performed. Table 1 shows the results.
(実施例3)
スピンコータの回転数を2000rpmとして樹脂組成物層(乾燥後の厚さ5μm)を形成した以外は、実施例1と同様にして導電性積層体を作製し、同様の評価を行った。結果を表1に示す。
(Example 3)
A conductive laminate was produced in the same manner as in Example 1 except that a resin composition layer (having a thickness of 5 μm after drying) was formed at a spin coater rotation speed of 2000 rpm, and the same evaluation was performed. Table 1 shows the results.
(実施例4)
60℃のオーブン(大気)で30分間加熱して樹脂組成物層(乾燥後の厚さ20μm)を形成した以外は、実施例2と同様にして導電性積層体を作製し、同様の評価を行った。結果を表1に示す。
(Example 4)
A conductive laminate was produced in the same manner as in Example 2 except that a resin composition layer (thickness after drying: 20 μm) was formed by heating in an oven (atmosphere) at 60 ° C. for 30 minutes, and the same evaluation was performed. gone. Table 1 shows the results.
(実施例5)
エポキシ樹脂としてビスフェノールA骨格を有する、「JER828」(三菱ケミカル株式会社 商品名)を使用した以外は、実施例2と同様にして導電性積層体を作製し、同様の評価を行った。結果を表1に示す。
(Example 5)
A conductive laminate was produced in the same manner as in Example 2 except that "JER828" (trade name of Mitsubishi Chemical Corporation) having a bisphenol A skeleton was used as the epoxy resin, and the same evaluation was performed. Table 1 shows the results.
(比較例1)
樹脂組成物層を形成しなかった以外は、実施例1と同様にして導電性積層体を作製し、同様の評価を行った。結果を表1に示す。
(Comparative example 1)
A conductive laminate was produced in the same manner as in Example 1, except that the resin composition layer was not formed, and the same evaluation was performed. Table 1 shows the results.
表1に示すとおり、実施例1~5の導電性積層体は、体積抵抗率が低い導電膜が形成されているとともに、樹脂組成物層を形成しなかった比較例1の導電性積層体に比べて、導電膜と基材との接着性に優れていることが確認された。また、炭素数4以上の直鎖状炭化水素基を有するエポキシ樹脂を用いた実施例1~4の導電性積層体は、導電膜と基材との接着性に更に優れていることが確認された。
As shown in Table 1, the conductive laminates of Examples 1 to 5 are formed with a conductive film having a low volume resistivity, and the conductive laminate of Comparative Example 1, which did not form a resin composition layer, In comparison, it was confirmed that the adhesion between the conductive film and the substrate is excellent. Further, it was confirmed that the conductive laminates of Examples 1 to 4 using the epoxy resin having a straight-chain hydrocarbon group with 4 or more carbon atoms are even more excellent in adhesion between the conductive film and the substrate. rice field.
Claims (5)
前記基材上に熱硬化性樹脂を含む樹脂組成物層を設ける工程と、
前記樹脂組成物層上に銅含有粒子を含む金属粒子含有層を設ける工程と、
前記樹脂組成物層及び前記金属粒子含有層を、不活性雰囲気又は還元雰囲気且つ大気圧下又は減圧下で加熱することにより、前記樹脂組成物層の硬化物によって前記基材に接着された導電膜を形成する工程と、
を備え、
前記熱硬化性樹脂が、ビスフェノール骨格と炭素数4以上の直鎖状炭化水素基とを有するエポキシ樹脂、及び/又は、ビスフェノール骨格と3以上のエーテル結合を含むポリオキシアルキレン基とを有するエポキシ樹脂を含む、導電性積層体の製造方法。 A method for producing a conductive laminate comprising a base material and a conductive film provided on the base material, the method comprising:
A step of providing a resin composition layer containing a thermosetting resin on the substrate;
A step of providing a metal particle-containing layer containing copper-containing particles on the resin composition layer;
A conductive film adhered to the substrate by a cured product of the resin composition layer by heating the resin composition layer and the metal particle-containing layer in an inert atmosphere or a reducing atmosphere under atmospheric pressure or under reduced pressure . forming a
with
The thermosetting resin is an epoxy resin having a bisphenol skeleton and a linear hydrocarbon group having 4 or more carbon atoms, and/or an epoxy resin having a bisphenol skeleton and a polyoxyalkylene group containing 3 or more ether bonds. A method for manufacturing a conductive laminate, comprising:
前記銅含有粒子が、球状の銅含有粒子(A)と扁平状の銅含有粒子(B)とを含み、
前記導体形成用組成物における前記扁平状の銅含有粒子(B)の含有量に対する前記球状の銅含有粒子(A)の含有量の比[球状の銅含有粒子(A)の含有量]/[扁平状の銅含有粒子(B)の含有量]が、0.25~4.0である、請求項1に記載の導電性積層体の製造方法。 The metal particle-containing layer is formed by applying a conductor-forming composition containing the copper-containing particles onto the resin composition layer,
The copper-containing particles include spherical copper-containing particles (A) and flat copper-containing particles (B),
Ratio of the content of the spherical copper-containing particles (A) to the content of the flat copper-containing particles (B) in the conductor-forming composition [content of the spherical copper-containing particles (A)]/[ The method for producing a conductive laminate according to claim 1, wherein the content of flat copper-containing particles (B)] is 0.25 to 4.0 .
前記導体形成用組成物における前記銅含有粒子の含有量が、前記導体形成用組成物の全質量100質量部に対して、20~80質量部である、請求項1~3のいずれか一項に記載の導電性積層体の製造方法。 The metal particle-containing layer is formed by applying a conductor-forming composition containing the copper-containing particles onto the resin composition layer,
4. The content of the copper-containing particles in the conductor-forming composition is 20 to 80 parts by mass with respect to 100 parts by mass of the conductor-forming composition. The method for producing the conductive laminate according to 1.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017017327A (en) | 2016-08-18 | 2017-01-19 | 藤森工業株式会社 | Manufacturing method for fpc including electromagnetic wave shield material |
| JP2017098486A (en) | 2015-11-27 | 2017-06-01 | 株式会社ノリタケカンパニーリミテド | Conductive adhesive for piezoelectric element, and piezoelectric element |
| JP2017107731A (en) | 2015-12-09 | 2017-06-15 | 日立化成株式会社 | Conductive sheet, manufacturing method thereof, and semiconductor device and electronic component obtained using the same |
| JP2017197658A (en) | 2016-04-27 | 2017-11-02 | 日立化成株式会社 | Conductor-forming composition, method for producing conductor, method for producing plating layer, conductor, laminate and device |
-
2018
- 2018-08-31 JP JP2018162447A patent/JP7143685B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017098486A (en) | 2015-11-27 | 2017-06-01 | 株式会社ノリタケカンパニーリミテド | Conductive adhesive for piezoelectric element, and piezoelectric element |
| JP2017107731A (en) | 2015-12-09 | 2017-06-15 | 日立化成株式会社 | Conductive sheet, manufacturing method thereof, and semiconductor device and electronic component obtained using the same |
| JP2017197658A (en) | 2016-04-27 | 2017-11-02 | 日立化成株式会社 | Conductor-forming composition, method for producing conductor, method for producing plating layer, conductor, laminate and device |
| JP2017017327A (en) | 2016-08-18 | 2017-01-19 | 藤森工業株式会社 | Manufacturing method for fpc including electromagnetic wave shield material |
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