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JP7180911B2 - Trays for semiconductor integrated circuits - Google Patents
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JP7180911B2 - Trays for semiconductor integrated circuits - Google Patents

Trays for semiconductor integrated circuits Download PDF

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JP7180911B2
JP7180911B2 JP2021042525A JP2021042525A JP7180911B2 JP 7180911 B2 JP7180911 B2 JP 7180911B2 JP 2021042525 A JP2021042525 A JP 2021042525A JP 2021042525 A JP2021042525 A JP 2021042525A JP 7180911 B2 JP7180911 B2 JP 7180911B2
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semiconductor integrated
integrated circuit
tray
pocket
substrate
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JP2022142375A (en
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亮 張
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SHINON CORP
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Description

本発明は、半導体集積回路(IC等)を収容するための半導体集積回路用トレーに関し、詳しくは、比較的大きい寸法を有する半導体集積回路の基板の銅箔部分のソルダーレジストに擦り傷や剥がれが生じることを抑える半導体集積回路用トレーに関する。 The present invention relates to a semiconductor integrated circuit tray for housing a semiconductor integrated circuit (IC, etc.), and more particularly, the solder resist on the copper foil portion of the substrate of the semiconductor integrated circuit having relatively large dimensions is scratched or peeled off. The present invention relates to a tray for a semiconductor integrated circuit that suppresses

半導体集積回路用トレーには、半導体集積回路を収容するための複数のポケットが形成されている。従来の半導体集積回路用トレー(以下、単に「トレー」ともいう。)においては、そのポケットの周縁の壁から、半導体集積回路の基板の周縁部を下方から支持するための支持段部が水平方向に延在している。この支持段部があることにより、PGAやBGA等のグリッドアレイ系の半導体集積回路の基板を支持する場合においても、その半導体集積回路の底面の端子がポケットの内底面に接触してしまうことがない。 A semiconductor integrated circuit tray is formed with a plurality of pockets for accommodating semiconductor integrated circuits. In a conventional semiconductor integrated circuit tray (hereinafter also simply referred to as a "tray"), a supporting step portion for supporting the peripheral portion of the substrate of the semiconductor integrated circuit from below extends horizontally from the peripheral wall of the pocket. extends to Due to the presence of the support step, even when supporting a substrate of a grid array semiconductor integrated circuit such as PGA or BGA, the terminals on the bottom surface of the semiconductor integrated circuit may come into contact with the inner bottom surface of the pocket. do not have.

特開2011-238660号公報JP 2011-238660 A 特許第5051797号公報Japanese Patent No. 5051797

しかし、例えば40mm×40mm四方以上の寸法を有する大型の半導体集積回路の基板については、トレーのポケット内に形成されている支持段部の支持面との接触面積が大きいこともあり、トレーの搬送時などにおいて、トレーのポケット内に収容されている半導体集積回路の基板の底面の周縁部の銅箔部分のソルダーレジストが、トレーの支持段部の支持面に接触して擦られると、ソルダーレジストに擦り傷や剥がれなどが生じてしまうことがある。 However, for large-sized semiconductor integrated circuit substrates having dimensions of, for example, 40 mm x 40 mm square or more, the contact area between the support surface of the support step formed in the pocket of the tray and the support surface is large. Sometimes, when the solder resist on the copper foil portion of the peripheral part of the bottom surface of the substrate of the semiconductor integrated circuit accommodated in the pocket of the tray contacts and rubs against the support surface of the support step of the tray, the solder resist is rubbed. Scratches and peeling may occur on the surface.

或いは、半導体集積回路の製造時や搬送時に外力(応力)を受けて、半導体集積回路の基板に反りが生じている場合、支持段部の鋭い先端縁に何度も接触することにより、その基板の上面や底面に適用されているソルダーレジストが少しずつ剥がれてしまうことがある。ここで反りが生じている場合とは、半導体集積回路が外力を受けて瞬間的に反る場合を含む。 Alternatively, if the substrate of the semiconductor integrated circuit is warped due to an external force (stress) during manufacture or transportation of the semiconductor integrated circuit, the substrate may be damaged by repeatedly contacting the sharp edge of the support step. The solder resist applied to the top and bottom of the device may peel off little by little. Here, the case where the warp occurs includes the case where the semiconductor integrated circuit receives an external force and instantly warps.

そこで、半導体集積回路の基板の上面や底面に適用されているソルダーレジストに擦り傷や剥がれが生じることを防ぐことのできる半導体集積回路用トレーを提供する。 Therefore, a semiconductor integrated circuit tray is provided that can prevent the solder resist applied to the top and bottom surfaces of the substrate of the semiconductor integrated circuit from being scratched or peeled off.

複数の半導体集積回路を個々に収容できるように構成された複数のポケットを有する半導体集積回路用トレーにおいて、半導体集積回路の基板の周縁部を下方から支持するための支持段部の支持面が水平面に対して僅かに下傾しつつ、各ポケットの周縁の壁から該ポケットの内側(中央寄り)へ延びているとともに、該支持段部は、該支持面の延びた先の端縁に沿って所定の曲率半径のアールつまり丸みを帯びていることを特徴とする、半導体集積回路用トレーを提供する。 In a semiconductor integrated circuit tray having a plurality of pockets configured to accommodate a plurality of semiconductor integrated circuits individually, the supporting surface of the supporting stepped portion for supporting the peripheral edge portion of the substrate of the semiconductor integrated circuit from below is a horizontal plane. , extending from the wall of the peripheral edge of each pocket toward the inner side (closer to the center) of the pocket while being slightly inclined downward with respect to To provide a semiconductor integrated circuit tray characterized by being rounded with a predetermined radius of curvature.

一実施例においては、水平面に対して僅かに下傾している支持面の俯角が3度~10度の範囲内から選択された角度であることを特徴とする。 In one embodiment, the depression angle of the support surface, which is slightly downward with respect to the horizontal plane, is an angle selected from the range of 3 degrees to 10 degrees.

一実施例において、上記所定の曲率半径は、0.2mm~0.8mmの範囲内から選択された曲率半径であることを特徴とする。 In one embodiment, the predetermined radius of curvature is a radius of curvature selected from the range of 0.2 mm to 0.8 mm.

さらなる実施例において、ポケットは、平面視で40mm×40mm四方以上の概ね四角形の形状の基板を有する所定の半導体集積回路を収容できるように構成されている。一例として、平面視で約40mm×60mmの基板を有する半導体集積回路を収容できるように構成されている。 In a further embodiment, the pocket is configured to accommodate a predetermined semiconductor integrated circuit having a substantially rectangular substrate of 40 mm×40 mm square or more in plan view. As an example, it is configured to accommodate a semiconductor integrated circuit having a substrate of approximately 40 mm×60 mm in plan view.

また、各ポケットの裏側の位置に凹所が形成されており、複数の該半導体集積回路用トレーが重ね合わされたとした場合に、下段の該半導体集積回路用トレーのポケット内に収容されている半導体集積回路の基板の上面の周縁部を覆う段部の天井面が3度~10度の仰角を有しつつ、上段の該半導体集積回路用トレーの凹所の周縁の壁から凹所の内側へ延びているとともに、該段部は、該天井面の延びた先の端縁に沿って0.2mm~0.8mmの曲率半径のアールつまり丸みを帯びていることを特徴とする。 In addition, recesses are formed on the back side of each pocket so that when a plurality of the semiconductor integrated circuit trays are superimposed, the semiconductor contained in the pocket of the semiconductor integrated circuit tray at the lower stage is placed on top of the semiconductor integrated circuit tray. While the ceiling surface of the stepped portion covering the periphery of the upper surface of the integrated circuit substrate has an elevation angle of 3 degrees to 10 degrees, from the peripheral wall of the recess of the upper semiconductor integrated circuit tray to the inside of the recess. The stepped portion is characterized in that it is rounded with a radius of curvature of 0.2 mm to 0.8 mm along the extended edge of the ceiling surface.

一実施例における半導体集積回路用トレーの斜視図。1 is a perspective view of a semiconductor integrated circuit tray in one embodiment; FIG. 一例における半導体集積回路の基板の(a)上面と、(b)底面を示す斜視図。1 is a perspective view showing (a) a top surface and (b) a bottom surface of a substrate of a semiconductor integrated circuit in one example; FIG. (a)一実施例における半導体集積回路用トレーの平面図。(b)図3(a)に示されているA-A線に沿って切り出された半導体集積回路用トレーの断面図。(c)図3(b)において一点鎖線で囲まれている部分を拡大して示す図。(a) A plan view of a semiconductor integrated circuit tray in one embodiment. (b) A cross-sectional view of the semiconductor integrated circuit tray taken along line AA shown in FIG. 3(a). (c) The figure which expands and shows the part enclosed with the dashed-dotted line in FIG.3(b). (a)半導体集積回路の反りのない基板がトレーに収容されている状態を示す拡大図。(b)半導体集積回路の反りのある基板がトレーに収容されている状態を示す拡大図。(a) An enlarged view showing a state in which a warp-free substrate of a semiconductor integrated circuit is accommodated in a tray. (b) An enlarged view showing a state in which a warped substrate of a semiconductor integrated circuit is accommodated in a tray. (a)半導体集積回路用トレーの裏面側の平面図。(b)図5(a)に示されているB-B線に沿って切り出された半導体集積回路用トレーの断面図。(c)図5(b)において一点鎖線で囲まれている部分を拡大して示す図。(a) A plan view of the back side of the tray for semiconductor integrated circuit. (b) A cross-sectional view of the semiconductor integrated circuit tray taken along line BB shown in FIG. 5(a). (c) The figure which expands and shows the part enclosed with the dashed-dotted line in FIG.5(b). (a)複数のトレーからなるスタックを示す図。(b)トレーのスタックの上下が逆さにされている状態を示す図。(a) Diagram showing a stack of trays. (b) A view showing a state in which the stack of trays is turned upside down. 図6(b)において一点鎖線で囲まれている部分のトレー内を拡大して示す断面図。Sectional drawing which expands and shows the inside of the tray of the part enclosed with the dashed-dotted line in FIG.6(b).

本発明の半導体集積回路用トレーについて、添付の図面を参照しつつ以下に説明する。 A semiconductor integrated circuit tray according to the present invention will be described below with reference to the accompanying drawings.

図1は、一実施例における半導体集積回路用トレー1の斜視図である。トレー1の表面側に、半導体集積回路の基板30(図2(a)及び図2(b)を参照)を個々に収容するための複数のポケット2が形成されている。半導体集積回路用トレー1は、例えば、硬質なプラスチック材料から形成されており、3つの半導体集積回路を収容できるように3つのポケットを有する。しかし、他の実施例において、半導体集積回路用トレー1は、3つ以外の個数のポケットを有する場合もある。また、半導体集積回路の基板の周縁部を下方から支持するための支持段部4が、ポケット2の周縁を画定している壁からポケット2の内側へ向かって少しだけ(例えば約5mm)延在している。このような支持段部4によって、トレー1のポケット2内に収容されるべき半導体集積回路の基板30が下方から支持されることとなる。 FIG. 1 is a perspective view of a semiconductor integrated circuit tray 1 in one embodiment. A plurality of pockets 2 are formed on the surface side of the tray 1 for individually accommodating semiconductor integrated circuit substrates 30 (see FIGS. 2(a) and 2(b)). The semiconductor integrated circuit tray 1 is made of, for example, a hard plastic material, and has three pockets so as to accommodate three semiconductor integrated circuits. However, in other embodiments, the semiconductor integrated circuit tray 1 may have a number of pockets other than three. Further, a support step portion 4 for supporting the peripheral edge portion of the substrate of the semiconductor integrated circuit from below extends slightly (for example, about 5 mm) toward the inside of the pocket 2 from the wall defining the peripheral edge of the pocket 2 . is doing. The substrate 30 of the semiconductor integrated circuit to be accommodated in the pocket 2 of the tray 1 is supported from below by the support step portion 4 as described above.

図2(a)は、一例における半導体集積回路の基板30の上面を示す。この半導体集積回路の基板30の上面42に、銅箔部分のソルダーレジスト44が適用され得る。 FIG. 2(a) shows the top surface of the substrate 30 of the semiconductor integrated circuit in one example. A solder resist 44 of a copper foil portion can be applied to the upper surface 42 of the substrate 30 of the semiconductor integrated circuit.

図2(b)は、一例における半導体集積回路の基板30の底面32を示す。図2(b)に示されているように、半導体集積回路の基板30がグリッドアレイ系(PGA/BGA)の基板である場合には底面32に複数の端子34が設けられている。さらにこの底面32に、ソルダーレジスト44が適用され得る。 FIG. 2(b) shows the bottom surface 32 of the substrate 30 of the semiconductor integrated circuit in one example. As shown in FIG. 2B, a plurality of terminals 34 are provided on the bottom surface 32 when the semiconductor integrated circuit substrate 30 is a grid array (PGA/BGA) substrate. Furthermore, a solder resist 44 may be applied to this bottom surface 32 .

図3(a)は、本発明の半導体集積回路用トレー1の表面側の平面図である。一実施例において、各ポケット2は平面視で概ね四角形の形状に形成されている。他の実施例において、各ポケット2は、該ポケット2内に収容されるべき半導体集積回路の基板の形状に応じて、四角形以外の形状に形成されている場合もある。本発明のトレー1は、比較的反りが生じ易い大型の半導体集積回路を収容するのに適しており、平面視で40mm×40mm四方以上(特には、平面視で50mm×50mm四方以上)の概ね四角形の形状の基板を有する所定の半導体集積回路用のトレーとして使用される場合において充分な効果を奏するものである。 FIG. 3(a) is a plan view of the surface side of the semiconductor integrated circuit tray 1 of the present invention. In one embodiment, each pocket 2 is generally rectangular in plan view. In other embodiments, each pocket 2 may be formed in a shape other than a square according to the shape of the substrate of the semiconductor integrated circuit to be accommodated in the pocket 2. FIG. The tray 1 of the present invention is suitable for accommodating a large-sized semiconductor integrated circuit that is relatively prone to warping, and has a size of approximately 40 mm x 40 mm square or more in plan view (particularly, 50 mm x 50 mm square or more in plan view). A sufficient effect can be obtained when used as a tray for a predetermined semiconductor integrated circuit having a rectangular substrate.

図3(b)は、図3(a)に示されているA-A線に沿って切り出されたトレー1の断面図である。トレー1の使用者は、複数のトレー1を重ね合わせてスタックにする際に、トレー1の外周縁に沿って形成されている外周壁14付近を互いに係合させることにより、複数のトレー1の位置決めをすることができる。また、トレー1の搬送時に振動を受けた半導体集積回路の基板30が水平方向に動いたとしても、トレー1のポケット2内の支持段部4が基板30の底面32の端子34(図2(b)を参照)に接触しないように設計されている。 FIG. 3(b) is a cross-sectional view of the tray 1 taken along line AA shown in FIG. 3(a). When stacking a plurality of trays 1, the user of the trays 1 stacks the plurality of trays 1 by engaging the vicinity of the outer peripheral wall 14 formed along the outer peripheral edges of the trays 1 with each other. can be positioned. Also, even if the substrate 30 of the semiconductor integrated circuit receives vibrations during transportation of the tray 1 and moves horizontally, the supporting step portion 4 in the pocket 2 of the tray 1 is not connected to the terminals 34 (see FIG. 2 ( b)) is designed not to come into contact with

図3(c)は、図3(b)において一点鎖線で囲まれている部分を拡大して示す図である。図3(c)に示されている実施例においては、半導体集積回路の基板30の周縁部36を下方から支持するための支持段部4の支持面6が5度の俯角を有しつつ、ポケット2の周縁の壁から該ポケット2の内側へ延びているとともに、支持段部4は、該支持面6の延びた先の端縁8に沿って0.3mmの曲率半径のアール(R)つまり丸みを帯びている。このような丸みが形成されている支持段部4の先端縁8に、半導体集積回路の基板30の周縁部36が繰り返し接触したとしても、基板30の底面32のソルダーレジスト44が摩耗してしまうことはない。 FIG.3(c) is a figure which expands and shows the part enclosed by the dashed-dotted line in FIG.3(b). In the embodiment shown in FIG. 3(c), the supporting surface 6 of the supporting stepped portion 4 for supporting the peripheral portion 36 of the substrate 30 of the semiconductor integrated circuit from below has a depression angle of 5 degrees. Extending from the peripheral wall of the pocket 2 to the inside of the pocket 2, the support step 4 has a radius of curvature of 0.3 mm along the extended edge 8 of the support surface 6. That is, it is rounded. Even if the peripheral edge portion 36 of the substrate 30 of the semiconductor integrated circuit repeatedly contacts the leading end edge 8 of the support step portion 4 formed with such a roundness, the solder resist 44 on the bottom surface 32 of the substrate 30 is worn away. never.

図4(a)は、半導体集積回路の反りのない基板30が、本発明のトレー1のポケット2内に収容されている状態を示す。半導体集積回路の基板30の周縁部36を下方から支持するための支持段部4の支持面6が水平面に対して僅かに下傾しつつ、ポケット2の周縁の壁からポケット2の内側へ延びていることにより、ポケット2内の支持段部4に支持されるべき半導体集積回路の基板30の底面32の周縁部36の端縁だけが支持面6に接触する。つまり、本発明の半導体集積回路用トレー1は、半導体集積回路の反りのない基板30に対しては、その底面32の周縁部36との接触面積が非常に小さいことにより、基板30の底面32の銅箔部分のソルダーレジスト44に擦り傷を生じさせにくいという利点を有する。 FIG. 4(a) shows a state in which a warp-free substrate 30 of a semiconductor integrated circuit is accommodated in the pocket 2 of the tray 1 of the present invention. The supporting surface 6 of the supporting stepped portion 4 for supporting the peripheral edge portion 36 of the substrate 30 of the semiconductor integrated circuit from below extends from the peripheral edge wall of the pocket 2 to the inside of the pocket 2 while being slightly downwardly inclined with respect to the horizontal plane. As a result, only the edge of the peripheral portion 36 of the bottom surface 32 of the substrate 30 of the semiconductor integrated circuit to be supported by the support step 4 in the pocket 2 contacts the support surface 6 . In other words, the semiconductor integrated circuit tray 1 of the present invention has a very small contact area between the bottom surface 32 and the peripheral portion 36 of the substrate 30 of the semiconductor integrated circuit without warping. It has the advantage that the solder resist 44 on the copper foil portion of the 1 is less likely to be scratched.

図4(b)は、半導体集積回路の反りのある基板30aが、本発明のトレー1のポケット2内に収容されている状態を示す。トレー1のポケット2内の支持段部4の支持面6が、水平面に対して僅かに下傾しつつポケット2の壁から該ポケット2の内側へ延びているため、半導体集積回路の基板30aに反りが生じている場合に、ポケット2内の支持段部4に支持されるべき半導体集積回路の基板30aの反りの程度に応じて底面32の周縁部36が支持段部4の支持面6に徐々に(緩やかに)接触する。さらには、支持段部4の先端縁8に沿ってアールつまり丸みが形成されているので、半導体集積回路の基板30aの底面32のソルダーレジスト44が摩耗しにくい。本発明のトレー1はこうして、半導体集積回路の反りのある基板30aの底面32のソルダーレジストに擦り傷や剥がれが生じることを防ぐこともできる。 FIG. 4(b) shows the warped substrate 30a of the semiconductor integrated circuit accommodated in the pocket 2 of the tray 1 of the present invention. Since the support surface 6 of the support step 4 in the pocket 2 of the tray 1 extends from the wall of the pocket 2 to the inside of the pocket 2 while being slightly inclined downward with respect to the horizontal plane, the substrate 30a of the semiconductor integrated circuit is In the case where the substrate 30a of the semiconductor integrated circuit to be supported by the supporting stepped portion 4 in the pocket 2 is warped, the peripheral edge portion 36 of the bottom surface 32 may become the supporting surface of the supporting stepped portion 4 depending on the degree of warping of the semiconductor integrated circuit substrate 30a. Gradually (gently) touch 6. Furthermore, since the leading end edge 8 of the support step portion 4 is rounded, the solder resist 44 on the bottom surface 32 of the substrate 30a of the semiconductor integrated circuit is less likely to wear out. The tray 1 of the present invention can thus also prevent the solder resist on the bottom surface 32 of the warped substrate 30a of the semiconductor integrated circuit from being scratched or peeled off.

図5(a)は、一実施例における半導体集積回路用トレー1aの裏面側を示す平面図である。この半導体集積回路用トレー1aについては、ポケット2の裏側となる位置に凹所16が形成されており、この凹所16は、複数のトレー1aが積み重ねられたときに下段のトレー1aのポケット2内に収容されるべき半導体集積回路の基板の上方を覆うように構成されている。一実施例において、凹所16の開口部は平面視で概ね四角形の形状に形成されている。さらには、該凹所16内の周縁の壁から段部18が延在している。 FIG. 5(a) is a plan view showing the back side of the semiconductor integrated circuit tray 1a in one embodiment. In this semiconductor integrated circuit tray 1a, a recess 16 is formed at a position on the back side of the pocket 2, and this recess 16 is located in the pocket 2 of the lower tray 1a when a plurality of trays 1a are stacked. It is configured to cover the upper side of the substrate of the semiconductor integrated circuit to be housed therein. In one embodiment, the opening of the recess 16 is generally rectangular in plan view. Additionally, a step 18 extends from the peripheral wall within the recess 16 .

図5(b)は、図5(a)に示されているB-B線に沿って切り出されたトレー1aの断面図である。また、図5(c)は、図5(b)において一点鎖線で囲まれている部分を拡大して示す図である。トレー1aの凹所16の段部18の天井面20が3度~10度の仰角(図5(c)においては5度の仰角)を有しつつ凹所16の周縁の壁から内側へ延びているとともに、段部18の端縁22と側壁26との境目に沿って、0.2mm~0.8mmの曲率半径(図5(c)においては0.3mmの曲率半径)のアールつまり丸みが形成されている。 FIG. 5(b) is a sectional view of the tray 1a taken along line BB shown in FIG. 5(a). Also, FIG. 5(c) is an enlarged view of a portion surrounded by a dashed line in FIG. 5(b). The ceiling surface 20 of the stepped portion 18 of the recess 16 of the tray 1a extends inward from the peripheral wall of the recess 16 while having an elevation angle of 3 to 10 degrees (5 degrees elevation angle in FIG. 5(c)). In addition, along the boundary between the edge 22 of the stepped portion 18 and the side wall 26, a radius of curvature of 0.2 mm to 0.8 mm (a radius of curvature of 0.3 mm in FIG. 5C) is rounded. is formed.

図6(a)は、複数のトレー1aが積み重ねられて結束バンド28を使って束ねられた状態のスタックを示す。図示されているスタックにおいて最上段の位置にあるトレー1a-3は、半導体集積回路の基板30を収容することなく、スタックの蓋として使用されている。また図6(b)は、スタックの上下が不意に或いは意図的に逆さにされたときの状態を示す。 FIG. 6(a) shows a stack in which a plurality of trays 1a are stacked and bundled with a binding band 28. FIG. The tray 1a-3 at the topmost position in the illustrated stack is used as a lid for the stack without containing the substrate 30 of the semiconductor integrated circuit. FIG. 6(b) shows the state when the stack is accidentally or intentionally turned upside down.

図7は、図6(b)において一点鎖線で囲まれている部分のトレー内部を拡大して示す断面図である。凹所16の段部18の天井面20が3度~10度の仰角を有しつつ凹所16の内側へ延びているとともに、段部18の延びた先の端縁22にアールつまり丸みを帯びていることの作用効果について説明すると、トレーのスタックの上下が逆さにされたときに、それまでトレー1a-2のポケット2の支持段部4の支持面6によって支持されていた半導体集積回路の基板30bが、トレー1a-3の凹所16内へ落ち込み、凹所16の壁から僅かに下傾する段部18の天井面20によって下方から緩やかに支持されることとなる。また、半導体集積回路の基板30bの上面42が、段部18の先端縁22に接触したとしても、段部18が水平面に対して僅かに下傾しつつ先端縁22にアールつまり丸みを有するので、基板30bの上面42のソルダーレジスト44に擦り傷などが生じにくいという効果を奏する。 FIG. 7 is an enlarged cross-sectional view showing the inside of the tray surrounded by a dashed line in FIG. 6(b). The ceiling surface 20 of the stepped portion 18 of the recess 16 extends to the inside of the recessed portion 16 while having an elevation angle of 3 to 10 degrees, and the end edge 22 of the extended tip of the stepped portion 18 is rounded. When the stack of trays is turned upside down, the semiconductor integrated circuit which has been supported by the support surface 6 of the support step 4 of the pocket 2 of the tray 1a-2 until then. The substrate 30b falls into the recess 16 of the tray 1a-3 and is gently supported from below by the ceiling surface 20 of the stepped portion 18 which is slightly downwardly inclined from the wall of the recess 16. As shown in FIG. Further, even if the upper surface 42 of the substrate 30b of the semiconductor integrated circuit contacts the tip edge 22 of the stepped portion 18, the tip edge 22 of the stepped portion 18 inclines slightly downward with respect to the horizontal plane and the tip edge 22 is rounded. , the solder resist 44 on the upper surface 42 of the substrate 30b is less likely to be scratched.

以上のように、本発明の半導体集積回路用トレー1,1aは、ポケット内の支持段部の俯角及び/又は凹所内の段部の仰角と、支持段部及び/又は段部の先端縁に形成された丸みとを兼ね備えることにより、ポケット内に収容されるべき半導体集積回路の基板の上面や下面に適用されているソルダーレジストに擦り傷や剥がれが生じることを防ぐことができるように構成されている。 As described above, the semiconductor integrated circuit trays 1 and 1a of the present invention have the depression angle of the stepped portion in the pocket and/or the elevation angle of the stepped portion in the recess, and the stepped support portion and/or the leading edge of the stepped portion. By combining with the formed roundness, the solder resist applied to the upper surface and the lower surface of the substrate of the semiconductor integrated circuit to be accommodated in the pocket can be prevented from being scratched or peeled off. there is

1…トレー
1a…トレー
1a-1…トレー
1a-2…トレー
1a-3…トレー
2…ポケット
4…支持段部
6…支持面
8…(支持段部の)先端縁
10…(ポケットの)内底面
12…側壁
14…外周壁
16…凹所
18…段部
20…天井面
22…(段部の)先端縁
24…裏面
26…側壁
28…結束バンド
30…半導体集積回路の基板
30a…半導体集積回路の基板
30b…半導体集積回路の基板
32…底面
34…端子
36…周縁
2…上面
44…ソルダーレジスト
46…端子
48…周縁部
REFERENCE SIGNS LIST 1 Tray 1a Tray 1a-1 Tray 1a-2 Tray 1a-3 Tray 2 Pocket 4 Supporting stepped portion 6 Supporting surface 8 Leading edge (of supporting stepped portion) 10 Inside (of pocket) Bottom surface 12 Side wall 14 Peripheral wall 16 Recess 18 Stepped portion 20 Ceiling surface 22 Leading edge 24 Back surface 26 Side wall 28 Binding band 30 Semiconductor integrated circuit substrate 30a Semiconductor integrated Circuit substrate 30b Semiconductor integrated circuit substrate 32 Bottom surface 34 Terminal 36 Peripheral edge
4 2... Upper surface 44... Solder resist 46... Terminal 48... Periphery

Claims (5)

複数の半導体集積回路を個々に収容できるように構成された複数のポケットを有する半導体集積回路用トレーにおいて、
半導体集積回路の基板の周縁部を下方から支持するための支持段部の支持面が水平面に対して3度~10度の俯角を有しつつ、各ポケットの周縁のほぼ垂直な壁から該ポケットの内側へ延びているとともに、該支持段部は、該支持面の延びた先の端縁に沿って所定の曲率半径のアールつまり丸みを帯びていることを特徴とする、半導体集積回路用トレー。
In a semiconductor integrated circuit tray having a plurality of pockets configured to individually accommodate a plurality of semiconductor integrated circuits,
While the supporting surface of the supporting step for supporting the peripheral edge of the substrate of the semiconductor integrated circuit from below has a depression angle of 3 to 10 degrees with respect to the horizontal plane, the peripheral edge of each pocket is substantially perpendicular to the pocket. and the supporting stepped portion is rounded with a predetermined radius of curvature along the extended edge of the supporting surface. .
上記周縁のほぼ垂直な壁の上辺に繋がる斜面であって、上記ポケットの入口へ向けて上記ポケットの開口面積を大きくするように形成された斜面を有する、請求項1に記載の半導体集積回路用トレー。2. The semiconductor integrated circuit according to claim 1, wherein said slope has a slope connected to an upper side of said substantially vertical wall of said peripheral edge, said slope being formed so as to increase an opening area of said pocket toward an entrance of said pocket. tray. 上記所定の曲率半径は、0.2mm~0.8mmの範囲内から選択された曲率半径であることを特徴とする、請求項1又は請求項2に記載の半導体集積回路用トレー。 3. The semiconductor integrated circuit tray according to claim 1, wherein said predetermined radius of curvature is selected from the range of 0.2 mm to 0.8 mm. 上記ポケットは、平面視で40mm×40mm四方以上の概ね四角形の形状の基板を有する所定の半導体集積回路を収容できるように構成されていることを特徴とする、請求項3に記載の半導体集積回路用トレー。 4. The semiconductor integrated circuit according to claim 3, wherein said pocket is constructed so as to accommodate a predetermined semiconductor integrated circuit having a substantially rectangular substrate of 40 mm×40 mm square or more in plan view. tray. 各ポケットの裏側の位置に凹所が形成されており、複数の該半導体集積回路用トレーが重ね合わされたとした場合に、下段の該半導体集積回路用トレーのポケット内に収容されている半導体集積回路の基板の上面の周縁部を覆う段部の天井面が3度~10度の仰角を有しつつ、上段の該半導体集積回路用トレーの上記凹所の周縁の壁から上記凹所の内側へ延びているとともに、該段部は、該天井面の延びた先の端縁に沿って0.2mm~0.8mmの曲率半径のアールつまり丸みを帯びていることを特徴とする、請求項1~4のいずれかに記載の半導体集積回路用トレー。 A recess is formed on the back side of each pocket, and the semiconductor integrated circuit accommodated in the pocket of the lower semiconductor integrated circuit tray when the plurality of semiconductor integrated circuit trays are superimposed. While the ceiling surface of the step covering the peripheral edge of the upper surface of the substrate has an elevation angle of 3 degrees to 10 degrees, from the peripheral wall of the recess of the upper semiconductor integrated circuit tray to the inside of the recess Claim 1, characterized in that the stepped portion is rounded with a curvature radius of 0.2 mm to 0.8 mm along the edge of the ceiling surface where the stepped portion extends. 5. The semiconductor integrated circuit tray according to any one of 1 to 4.
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CN118335664B (en) * 2024-06-12 2024-10-22 长春光华微电子设备工程中心有限公司 Self-positioning tray for warp substrate

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