JP7182299B2 - 新規sp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法 - Google Patents
新規sp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法 Download PDFInfo
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Description
窒化ホウ素原料をプレプレス金型に入れて、プレス機によって、窒化ホウ素原料を窒化ホウ素原料本体(raw material body)にプレ成形した後、真空熱圧焼結炉内に入れてプレ加熱する工程(1)と、
工程(1)でプレ加熱された窒化ホウ素原料本体をアセンブリブロックに入れた後、窒化ホウ素原料本体を含むアセンブリブロックを乾燥させる(例えば、乾燥ボックス内で乾燥させる)工程(2)と、
工程(2)で乾燥されたアセンブリブロック(任意に選択して冷却した後)をプレス機に入れて高温高圧操作を行う工程(3)と、
放圧後、プレス機から取り出したアセンブリブロックを冷却し、sp2-sp3ハイブリダイゼーションクリスタル窒化ホウ素を得る工程(4)と、を含む。
1種類以上の窒化ホウ素原料(例えば、hBN、rBN、窒化ホウ素ナノチューブ、非晶質窒化ホウ素及びオニオン窒化ホウ素等を含むsp2ハイブリダイゼーション窒化ホウ素原料)をプレプレス金型に入れ、プレス機によって窒化ホウ素原料が直円筒形の本体にプレ成形した後、真空熱圧焼結炉内に入れてプレ加熱を行い、プレ加熱温度が200~1800℃であり、プレ加熱時間が5~60minであり、プレ加熱圧力が20~50MPaである工程(1)と、
工程(1)でプレ加熱された窒化ホウ素原料本体をアセンブリブロックに入れた後、窒化ホウ素原料本体を含むアセンブリブロックを乾燥ボックス内に入れて乾燥し、乾燥温度が100~200℃であり、乾燥時間が1~3hである工程(2)と、
工程(2)のアセンブリブロックを取り出して室温まで冷却し、続いてアメリカRockland Research社製T25型プレス機に入れて高温高圧操作を行い、合成圧力が3~25GPaであり、温度が600~2500℃であり、保温時間が5~120minである工程(3)と、
プレス機を冷却し圧力開放し後、プレス機からアセンブリブロックを取り出し、サンプル周囲のアセンブリブロックを除去して、新規sp2-sp3ハイブリッドクリスタル窒化ホウ素-Gradia窒化ホウ素を得る工程(4)と、を含む。
工程(1):hBN原料をプレプレス金型に入れ、プレス機を用いて40MPaの圧力で約5minプレプレスして、円筒形の本体を得た後、真空熱圧焼結炉内に入れてプレ加熱を行い、プレ加熱温度を1500℃前後に制御し、プレ加熱時間を約40minに制御する。
工程(1):窒化ホウ素ナノチューブをプレプレス金型に入れ、プレス機を用いて30MPaの圧力で約10minプレプレスして、円筒形の本体を得た後、真空熱圧焼結炉内に入れてプレ加熱を行う。プレ加熱温度は1400℃前後に制御し、プレ加熱する焼き時間は15~20minに制御する。
工程(1):オニオン窒化ホウ素をプレプレス金型に入れ、プレス機を用いて50MPaの圧力で15minプレプレスして、円筒形の本体を得る。
実施例3の工程(1)~(4)を繰り返すが、工程(3)における合成圧力及び温度を20GPa及び800℃とする。
工程(1):hBN原料を希塩酸溶液に入れて不純物を除去し、酸洗浄後、hBN原料を分離し、メタノールで複数回洗浄する。洗浄後の窒化ホウ素原料を乾燥処理して、精製されたhBN原料を得る。原料をプレプレス金型に入れ、プレス機を用いて20MPaの圧力で5minプレ成形して、円筒形の本体を得た後、真空熱圧焼結炉内に入れてプレ加熱を行う。プレ加熱圧力が30MPa、プレ加熱温度が1200℃、プレ加熱時間が20分である。
工程(1):cBN原料粉末に対して精製、真空加熱等の前処理を行い、原料粉末に吸着された酸素、吸着水及び結合水等の不純物を除去する。具体的には、酸溶解による不純物の除去によって精製し、精製後の原料粉末は真空ホットプレス炉の金型内に充填される。真空ホットプレス炉の真空度が5*10-2以下で、温度が1600℃、圧力が30MPaであり、15min保持する。
立方晶窒化ホウ素(cBN)を原料として、実施例5の工程(1)~(4)を繰り返すが、工程(3)における合成圧力及び温度は6GPa及び1700℃とする。
工程(1):hBN原料を希塩酸溶液に入れて不純物を除去し、酸洗浄後、hBN原料を分離して、メタノールで複数回洗浄する。洗浄後の窒化ホウ素原料を乾燥処理して、精製されたhBN原料を得る。原料をプレプレス金型に入れ、プレス機を用いて20MPaの圧力で55minプレ成形して、円筒形の本体を得た後、真空熱圧焼結炉内に入れてプレ加熱を行う。プレ加熱圧力が30MPa、プレ加熱温度が1200℃、プレ加熱時間が20分である。
Claims (6)
- sp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法であって、
前記sp 2 -sp 3 ハイブリッドクリスタル窒化ホウ素は、基本構造ユニットがsp 2 ハイブリダイゼーションのグラファイト様構造ユニット及びsp 3 ハイブリダイゼーションのダイヤモンド様構造ユニットからなり、前記グラファイト様構造ユニットと前記ダイヤモンド様構造ユニットが、特定の共晶面を介して互いに結合されており、
前記調製方法は、窒化ホウ素原料に対して高温高圧処理を行う工程を含み、さらに、
窒化ホウ素原料をプレプレス金型に入れ、プレス機よって窒化ホウ素原料を原料本体(raw material body)にプレ成形した後、真空熱圧焼結炉内に入れてプレ加熱する工程(1)と、
工程(1)でプレ加熱された窒化ホウ素原料本体をアセンブリブロックに入れた後、窒化ホウ素原料本体を含むアセンブリブロックを乾燥する工程(2)と、
工程(2)で乾燥されたアセンブリブロックをプレス機に入れて高温高圧処理を行う工程(3)と、
冷却、圧力開放後、アセンブリブロックをプレス機から取り出して、前記sp 2 -sp 3 ハイブリッドクリスタル窒化ホウ素を得る工程(4)と、
ことを特徴とするsp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法。 - 工程(1)は、窒化ホウ素原料を酸精製して不純物を除去し、メタノールで洗浄乾燥した後、前記窒化ホウ素原料をプレプレス金型に入れる工程をさらに含む、
ことを特徴とする請求項1に記載のsp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法。 - 工程(1)におけるプレ加熱温度が200~1800℃であり、プレ加熱時間が5~60minである、
ことを特徴とする請求項1に記載のsp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法。 - 工程(2)における乾燥工程の乾燥温度は100~200℃であり、乾燥時間は1~3hである、
ことを特徴とする請求項1に記載のsp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法。 - 前記高温高圧処理の圧力が3~25GPaであり、温度が600~2500℃であり、保温時間が5~120minである、
ことを特徴とする請求項1に記載のsp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法。 - 前記窒化ホウ素原料は、グラファイト様構造の六方晶窒化ホウ素、菱面体窒化ホウ素、乱層構造の窒化ホウ素、グラフェン様の単層窒化ホウ素、窒化ホウ素ナノチューブ、オニオン窒化ホウ素、非晶質窒化ホウ素から選ばれる1種類又は複数種類のsp2ハイブリダイゼーション窒化ホウ素材料であるか、或いは、閃亜鉛鉱型窒化ホウ素及びウルツ鉱型窒化ホウ素から選ばれる1種類又は複数種類のsp3ハイブリダイゼーション窒化ホウ素材料であるか、或いは、2種類の原料の混合物である、
ことを特徴とする請求項1~5のいずれか1項に記載のsp2-sp3ハイブリッドクリスタル窒化ホウ素の調製方法。
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| JP2005097098A (ja) | 2003-08-20 | 2005-04-14 | Showa Denko Kk | 立方晶窒化ホウ素、立方晶窒化ホウ素の製造方法、立方晶窒化ホウ素を用いた砥石および焼結体 |
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Patent Citations (3)
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|---|---|---|---|---|
| JP2005097098A (ja) | 2003-08-20 | 2005-04-14 | Showa Denko Kk | 立方晶窒化ホウ素、立方晶窒化ホウ素の製造方法、立方晶窒化ホウ素を用いた砥石および焼結体 |
| JP2011168848A (ja) | 2010-02-19 | 2011-09-01 | Nagaoka Univ Of Technology | 窒化ホウ素皮膜 |
| JP2019172486A (ja) | 2018-03-27 | 2019-10-10 | 京セラ株式会社 | 窒化硼素粉末及びその製造方法 |
Non-Patent Citations (1)
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| Materials Chemistry and Physics,2018年,Vol.217,p.5-10,DOI: 10.1016/j.matchemphys.2018.06.041 |
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| Publication number | Publication date |
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| JP2021172579A (ja) | 2021-11-01 |
| JP7440726B2 (ja) | 2024-02-29 |
| EP3896032B1 (en) | 2022-12-21 |
| CN113526475A (zh) | 2021-10-22 |
| US11708268B2 (en) | 2023-07-25 |
| CN113526475B (zh) | 2023-01-20 |
| EP3896032A1 (en) | 2021-10-20 |
| JP2022188080A (ja) | 2022-12-20 |
| US20210323822A1 (en) | 2021-10-21 |
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