JP7222003B2 - SUBSTRATE PROCESSING APPARATUS, SUBSTRATE HOLDING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PROGRAM - Google Patents

Description

The present disclosure relates to a substrate processing apparatus, a substrate holding apparatus, and a method of manufacturing a semiconductor device.

As one process of manufacturing a semiconductor device (semiconductor device), for example, a substrate in a processing chamber is heated using a heating apparatus to change the composition or crystal structure of a thin film formed on the surface of the substrate, or to change the growth. There is a modification treatment represented by an annealing treatment for repairing crystal defects and the like in a thin film. 2. Description of the Related Art In recent years, miniaturization and high integration of semiconductor devices have become remarkable, and along with this, there is a demand for a modification process for a high-density substrate on which a pattern having a high aspect ratio is formed. As a modification treatment method for such a high-density substrate, a heat treatment method using electromagnetic waves as disclosed in Patent Document 1, for example, has been studied.

WO2017/149663

The rotation axis of the boat rotation mechanism and the rotation axis of the wafer are on the same straight line. In induction heating in which an electromagnetic wave is applied to a wafer, there is a possibility that a thick portion and a thin portion appear in a circumferential shape due to the influence of a standing wave due to the wavelength and frequency of the electromagnetic wave, degrading the uniformity of the film thickness.

An object of the present disclosure is to provide a technique capable of improving the uniformity of film thickness.

According to one aspect of the present disclosure,
a processing chamber for processing substrates;
a microwave generator that generates microwaves;
a substrate holder that holds and holds a plurality of substrates;
A technique is provided that includes an output shaft that supports the substrate holder, and a rotation mechanism that has an input shaft that is eccentrically positioned with respect to the output shaft.

According to the present disclosure, it is possible to improve film thickness uniformity.

1 is a vertical cross-sectional view showing a schematic configuration of a substrate processing apparatus suitably used in an embodiment of the present disclosure at the position of a processing furnace; FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus preferably used in an embodiment of the present disclosure; FIG. 1 is a schematic configuration diagram showing a longitudinal sectional view of a processing furnace portion of a substrate processing apparatus suitably used in an embodiment of the present disclosure; FIG. 1 is a vertical cross-sectional view showing a schematic configuration of a substrate processing apparatus preferably used in an embodiment of the present disclosure at the position of a cooling chamber; FIG. (A) is a diagram schematically showing a method of transferring a wafer to a cooling chamber. (B) is a diagram schematically showing a method of unloading a wafer that has been completely cooled from the cooling chamber. 1 is a schematic configuration diagram of a controller of a substrate processing apparatus preferably used in an embodiment of the present disclosure; FIG. FIG. 4 is a diagram showing a flow of substrate processing steps in the embodiment of the present disclosure; 1 is a schematic configuration diagram showing a vertical cross-sectional view of a boat, a mounting table, and a driving mechanism of a substrate processing apparatus preferably used in an embodiment of the present disclosure; FIG. 1 is a schematic configuration diagram showing a vertical cross-sectional view of a drive mechanism of a substrate processing apparatus suitably used in an embodiment of the present disclosure; FIG. 1 is a schematic configuration diagram showing a top view of a drive mechanism of a substrate processing apparatus suitably used in an embodiment of the present disclosure; FIG. FIG. 4 is a diagram for explaining rotation and revolution of a wafer by a drive mechanism of a substrate processing apparatus preferably used in an embodiment of the present disclosure, and is a diagram showing a case where the center of rotation of the wafer and the output shaft of the drive mechanism are not eccentric; . FIG. 4 is a diagram for explaining rotation and revolution of a wafer by a drive mechanism of a substrate processing apparatus preferably used in an embodiment of the present disclosure, and is a diagram showing a case where the center of rotation of the wafer and the output shaft of the drive mechanism are eccentric; .

Hereinafter, embodiments of the present disclosure will be described with reference to FIGS. 1 to 12. FIG.
In all the drawings, the same or corresponding configurations are denoted by the same or corresponding reference numerals, and overlapping descriptions are omitted. The drawings used in the following description are all schematic, and the dimensional relationship of each element, the ratio of each element, etc. shown in the drawings do not necessarily match the actual ones. Moreover, the dimensional relationship of each element, the ratio of each element, etc. do not necessarily match between a plurality of drawings.

(1) Configuration of Substrate Processing Apparatus The substrate processing apparatus 100 according to the embodiment is configured as a single-wafer heat treatment apparatus that performs various types of heat treatment on one or a plurality of wafers. The description will be made as an apparatus for performing the reforming process. In the substrate processing apparatus 100 according to the present embodiment, a FOUP (Front Opening Unified Pod: hereinafter referred to as a pod) 110 is used as a storage container (carrier) containing wafers 200 as substrates. Pod 110 is also used as a transport container for transporting wafers 200 between various substrate processing apparatuses.

As shown in FIGS. 1 and 2, the substrate processing apparatus 100 includes a transfer housing 202 having therein a transfer chamber 203 for transferring the wafer 200, and a processing chamber 202 provided on the side wall of the transfer housing 202 for processing the wafer 200. Cases 102-1 and 102-2 serving as processing containers, which will be described later, have chambers 201-1 and 201-2 therein, respectively. A cooling case 109 forming a cooling chamber 204, which will be described later, is provided between the processing chambers 201-1 and 201-2.

1 (lower side in FIG. 2), which is the front side of the transfer housing 202, is a pod opening and closing mechanism for opening and closing the lid of the pod 110 to carry the wafer 200 into and out of the transfer chamber 203. A load port unit (LP) 106 is arranged as a mechanism. The load port unit 106 includes a housing 106a, a stage 106b, and an opener 106c. The lid (not shown) provided on the pod 110 is opened and closed by the opener 106c. Also, the load port unit 106 may have a function capable of purging the inside of the pod 110 with a purge gas such as _N2 gas. Further, the transfer housing 202 has a purge gas circulation structure, which will be described later, for circulating a purge gas such as N ₂ in the transfer chamber 203 .

Gate valves (GV) 205-1 and 205-2 for opening and closing the processing chambers 201-1 and 201-2 are provided on the left side in FIG. are placed respectively. In the transfer chamber 203, a substrate transfer robot, which is a substrate transfer mechanism for transferring the wafer 200, and a transfer machine 125 as a substrate transfer unit are installed. Transfer device 125 can horizontally rotate or linearly move tweezers (arms) 125a-1 and 125a-2 as mounting units for mounting wafer 200, and tweezers 125a-1 and 125a-2. It is composed of a transfer device 125b and a transfer device elevator 125c for raising and lowering the transfer device 125b. By the continuous operation of the tweezers 125a-1 and 125a-2, the transfer device 125b, and the transfer device elevator 125c, wafers 200 are loaded (charged) into a boat (substrate holder) 217, cooling chamber 204, and pod 110, which will be described later. It has a configuration that allows it to be detached (discharged). Hereinafter, the cases 102-1 and 102-2, the processing chambers 201-1 and 201-2, and the tweezers 125a-1 and 125a-2 are simply referred to as the case 102, the processing Chamber 201 is described as tweezers 125a.

The tweezers 125a-1 are made of ordinary aluminum and are used for transferring low temperature and normal temperature wafers. The tweezers 125a-2 are made of a material such as aluminum or quartz, which has high heat resistance and poor thermal conductivity, and is used to transfer wafers at high temperature and room temperature. In other words, the tweezers 125a-1 are a low temperature substrate transfer section, and the tweezers 125a-2 are a high temperature substrate transfer section. The high-temperature tweezers 125a-2 are preferably configured to have heat resistance of, for example, 100° C. or higher, more preferably 200° C. or higher. A mapping sensor can be installed in the low temperature tweezers 125a-1. By providing a mapping sensor to the low-temperature tweezers 125a-1, it is possible to confirm the number of wafers 200 in the load port unit 106, the number of wafers 200 in the processing chamber 201, and the number of wafers 200 in the cooling chamber 204. confirmation can be made.

In this embodiment, the tweezers 125a-1 will be described as low temperature tweezers and the tweezers 125a-2 will be described as high temperature tweezers, but they are not limited to this. The tweezers 125a-1 are made of a material having high heat resistance and poor thermal conductivity, such as aluminum or quartz, and are used for transporting wafers at high temperature and room temperature. It may be used to transfer low temperature and normal temperature wafers. Also, both the tweezers 125a-1 and 125a-2 may be made of a material having high heat resistance and low thermal conductivity, such as aluminum or quartz.

(treatment furnace)
A processing furnace having a substrate processing structure as shown in FIG. 3 is constructed in an area A surrounded by a dashed line in FIG. As shown in FIG. 2, a plurality of processing furnaces are provided in this embodiment, but since the structures of the processing furnaces are the same, only one structure will be described, and the description of the structure of the other processing furnace will be omitted. do.

As shown in FIG. 3, the processing furnace has a case 102 as a cavity (processing container) made of a material such as metal that reflects electromagnetic waves. A cap flange (closure plate) 104 made of a metal material closes the upper end of the case 102 via an O-ring as a sealing member (not shown). The space inside the case 102 and the cap flange 104 is mainly configured as a processing chamber 201 for processing substrates such as silicon wafers. A reaction tube (not shown) made of quartz that allows electromagnetic waves to pass through may be installed inside the case 102, and the processing container may be configured such that the inside of the reaction tube serves as a processing chamber. Alternatively, the processing chamber 201 may be configured using a case 102 with a closed ceiling without providing the cap flange 104 .

A mounting table 210 is provided in the processing chamber 201 , and a boat 217 as a substrate holding unit for holding a plurality of wafers 200 as substrates is mounted on the upper surface of the mounting table 210 . The boat 217 holds a wafer 200 to be processed and susceptors 103a and 103b placed vertically above and below the wafer 200 so as to sandwich the wafer 200 at a predetermined interval. The susceptors 103a and 103b are made of, for example, polycrystalline silicon having a columnar crystal structure solidified in one longitudinal direction (perpendicular to the wafer 200) and having isotropic thermal conductivity without crystal orientation. Concentration of the electric field strength on the edge of the wafer 200 is suppressed by forming plates (Si plates) and arranging them above and below the wafer 200 . That is, the susceptor suppresses absorption of electromagnetic waves by the edge of the wafer. In addition, since the amount of heat generated by the susceptors 103a and 103b is greater than the amount of heat generated by the wafer 200, there are heat generating elements above and below the wafer 200, which increases heat retention (heat insulation) and reduces variations in temperature within the wafer. . Further, quartz plates 101a and 101b as heat insulating plates may be held at predetermined intervals on the upper and lower surfaces of the susceptors 103a and 103b. In this embodiment, each of the quartz plates 101a and 101b and each of the susceptors 103a and 103b are made of the same parts. will be named and explained.

A case 102 as a processing container has, for example, a circular cross section and is configured as a flat closed container. Further, the transport case 202 as a lower container is made of, for example, a metal material such as aluminum (Al) or stainless steel (SUS), quartz, or the like. A space surrounded by the case 102 may be called a processing chamber 201 or a reaction area 201 as a processing space, and a space surrounded by the transfer housing 202 may be called a transfer chamber or transfer area 203 as a transfer space. The processing chamber 201 and the transfer chamber 203 are not limited to being horizontally adjacent to each other as in the present embodiment, but may be vertically adjacent to each other so that a substrate holder having a predetermined structure is moved up and down. good.

As shown in FIGS. 1, 2, and 3, a substrate loading/unloading port 206 adjacent to the gate valve 205 is provided on the side surface of the transfer housing 202, and the wafer 200 passes through the substrate loading/unloading port 206. It moves between the processing chamber 201 and the transfer chamber 203 . Around the gate valve 205 or the substrate loading/unloading port 206, a choke structure having a length of 1/4 wavelength of the used electromagnetic wave is provided as a countermeasure against electromagnetic wave leakage, which will be described later.

An electromagnetic wave supply unit as a heating device, which will be described in detail later, is installed on the side surface of the case 102, and electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafer 200 and the like. , to process the wafer 200 .

The mounting table 210 is supported by a shaft 255 as a rotating shaft. The shaft 255 is connected to a driving mechanism 267 as a rotating mechanism that rotates at the bottom and outside of the processing chamber 201 . By operating the driving mechanism 267 to rotate the shaft 255 and the mounting table 210, the wafers 200 mounted on the boat 217 can be rotated. Details of the drive mechanism 267 will be described later.

Here, the mounting table 210 is raised or lowered by the drive mechanism 267 according to the height of the substrate loading/unloading port 206 so that the wafer 200 is at the wafer transport position when the wafer 200 is transported, and when the wafer 200 is processed, the wafer 200 is moved downward. may be configured to ascend or descend to a processing position (wafer processing position) within the processing chamber 201 .

An exhaust unit for exhausting the atmosphere of the processing chamber 201 is provided below the processing chamber 201 and on the outer peripheral side of the mounting table 210 . As shown in FIG. 3, an exhaust port 221 is provided in the exhaust portion. An exhaust pipe 231 is connected to the exhaust port 221. In the exhaust pipe 231, a pressure regulator 244 such as an APC valve that controls the valve opening according to the pressure inside the processing chamber 201, and a vacuum pump 246 are connected in series. It is connected to the.

Here, the pressure regulator 244 is not limited to an APC valve as long as it can receive pressure information in the processing chamber 201 and a feedback signal from a pressure sensor 245, which will be described later, and adjust the exhaust amount. It may be configured to use both the on-off valve and the pressure regulating valve.

The exhaust port 221, the exhaust pipe 231, and the pressure regulator 244 mainly constitute an exhaust section (also referred to as an exhaust system or an exhaust line). An exhaust port may be provided so as to surround the mounting table 210 so that gas can be exhausted from the entire periphery of the wafer 200 . Also, a vacuum pump 246 may be added to the configuration of the exhaust section.

The cap flange 104 is provided with a gas supply pipe 232 for supplying processing gases such as inert gas, source gas, reaction gas, etc. for various substrate processing into the processing chamber 201 . The gas supply pipe 232 is provided with a mass flow controller (MFC) 241 as a flow controller (flow control unit) and a valve 243 as an on-off valve in order from upstream. A nitrogen (N ₂ ) gas source, which is an inert gas, for example, is connected to the upstream side of the gas supply pipe 232 and supplied into the processing chamber 201 via the MFC 241 and the valve 243 . When a plurality of types of gases are used during substrate processing, the gas supply pipe 232 is provided with an MFC, which is a flow rate controller, and a valve, which is an on-off valve, downstream of the valve 243 in the gas supply pipe 232 in this order from the upstream side. A plurality of types of gas can be supplied by using the configuration in which the supply pipes are connected. A gas supply pipe provided with an MFC and a valve may be installed for each gas type.

A gas supply system (gas supply unit) is mainly configured by the gas supply pipe 232 , the MFC 241 and the valve 243 . When an inert gas is passed through the gas supply system, it is also called an inert gas supply system. As the inert gas, in addition to _N2 gas, rare gases such as Ar gas, He gas, Ne gas, and Xe gas can be used.

A temperature sensor 263 is installed on the cap flange 104 as a non-contact temperature measuring device. By adjusting the output of a microwave oscillator (microwave generator) 655, which will be described later, based on the temperature information detected by the temperature sensor 263, the substrate is heated and the substrate temperature has a desired temperature distribution. The temperature sensor 263 is composed of a radiation thermometer such as an IR (Infrared Radiation) sensor. A temperature sensor 263 is installed to measure the surface temperature of the quartz plate 101 a or the surface temperature of the wafer 200 . When a susceptor is provided as the heating element described above, the surface temperature of the susceptor may be measured. In this embodiment, the temperature of the wafer 200 (wafer temperature) means the wafer temperature converted by temperature conversion data described later, that is, the estimated wafer temperature. It is assumed that the temperature obtained by directly measuring the temperature of the wafer 200 is indicated by , or both of them are indicated.

A temperature sensor 263 obtains changes in temperature for each of the quartz plate 101 or the susceptor 103 and the wafer 200 in advance, thereby obtaining a temperature indicating the correlation between the temperatures of the quartz plate 101 or the susceptor 103 and the wafer 200. The converted data may be stored in the storage device 121 c or the external storage device 123 . By preparing the temperature conversion data in advance in this way, the temperature of the wafer 200 can be estimated by measuring only the temperature of the quartz plate 101, and based on the estimated temperature of the wafer 200, , the output of the microwave oscillator 655, that is, the heating device can be controlled.

Note that the means for measuring the temperature of the substrate is not limited to the radiation thermometer described above, and a thermocouple may be used for temperature measurement, or a thermocouple and a non-contact thermometer may be used together to measure the temperature. may However, when the temperature is measured using a thermocouple, it is necessary to place the thermocouple near the wafer 200 to measure the temperature. That is, since the thermocouple must be arranged in the processing chamber 201, the thermocouple itself is heated by microwaves supplied from a microwave oscillator, which will be described later, so that accurate temperature measurement cannot be performed. Therefore, it is preferable to use a non-contact thermometer as the temperature sensor 263 .

Moreover, the temperature sensor 263 is not limited to being provided on the cap flange 104 and may be provided on the mounting table 210 . Moreover, the temperature sensor 263 is not only directly installed on the cap flange 104 and the mounting table 210, but also measures indirectly by reflecting radiation light from a measurement window provided on the cap flange 104 and the mounting table 210 with a mirror or the like. may be configured to Furthermore, the number of temperature sensors 263 is not limited to one, and a plurality of temperature sensors may be installed.

Electromagnetic wave introduction ports 653-1 and 653-2 are installed on the side wall of the case 102. As shown in FIG. One ends of waveguides 654-1 and 654-2 for supplying electromagnetic waves (microwaves) into the processing chamber 201 are connected to the electromagnetic wave introduction ports 653-1 and 653-2, respectively. Microwave oscillators (electromagnetic wave sources) 655-1 and 655-2 are connected to the other ends of the waveguides 654-1 and 654-2, respectively, as heating sources for supplying electromagnetic waves to heat the processing chamber 201. there is Microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to waveguides 654-1 and 654-2, respectively. A magnetron, a klystron, or the like is used for the microwave oscillators 655-1 and 655-2. Hereinafter, electromagnetic wave introduction ports 653-1 and 653-2, waveguides 654-1 and 654-2, and microwave oscillators 655-1 and 655-2 are described below, unless it is necessary to distinguish between them. An electromagnetic wave introduction port 653, a waveguide 654, and a microwave oscillator 655 are described for explanation.

The frequency of the electromagnetic waves generated by microwave oscillator 655 is preferably controlled to be in the frequency range of 13.56 MHz to 24.125 GHz. More preferably, the frequency is controlled to be 2.45 GHz or 5.8 GHz. Here, the respective frequencies of the microwave oscillators 655-1 and 655-2 may be the same frequency, or may be set at different frequencies.

In addition, in the present embodiment, two microwave oscillators 655 are arranged on the side surface of the case 102, but this is not a limitation, and one or more microwave oscillators 655 may be arranged. may be arranged so as to be provided on different sides, such as opposite sides of the . Mainly, an electromagnetic wave supply unit (electromagnetic wave supply device, microwave supply unit, also referred to as microwave supply) is configured.

A controller 121, which will be described later, is connected to each of the microwave oscillators 655-1 and 655-2. A temperature sensor 263 for measuring the temperature of the quartz plate 101 a or 101 b housed in the processing chamber 201 or the wafer 200 is connected to the controller 121 . The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the method described above and transmits the temperature to the controller 121. The controller 121 controls the outputs of the microwave oscillators 655-1 and 655-2 to measure the temperature of the wafer 200. Control heating. The method of controlling heating by the heating device includes a method of controlling the heating of the wafer 200 by controlling the voltage input to the microwave oscillator 655, and a method of turning on and off the power of the microwave oscillator 655. A method of controlling the heating of the wafer 200 by changing the time ratio can be used.

Here, microwave oscillators 655 - 1 and 655 - 2 are controlled by the same control signal sent from controller 121 . However, the configuration is not limited to this, and the microwave oscillators 655-1 and 655-2 are individually controlled by transmitting individual control signals from the controller 121 to each of the microwave oscillators 655-1 and 655-2. You may

(cooling room)
As shown in FIGS. 2 and 4, a position on the side of the transfer chamber 203 and between the processing chambers 201-1 and 201-2 is approximately the same distance from the processing chambers 201-1 and 201-2. Specifically, the cooling chamber as a cooling area for cooling the wafer 200 subjected to the predetermined substrate processing so that the transfer distance from the substrate loading/unloading port 206 of the processing chambers 201-1 and 201-2 is substantially the same. A cooling area 204 (also referred to as cooling area or cooling section) is formed by the cooling case 109 . Inside the cooling chamber 204, a wafer cooling mount (also called a cooling stage, hereinafter referred to as CS) 108 having the same structure as the boat 217 as a substrate holder is provided. As shown in FIG. 5, which will be described later, the CS 108 is configured to be able to horizontally hold a plurality of wafers 200 in multiple vertical stages by means of a plurality of wafer holding grooves 107a to 107d. In addition, in the cooling case 109, an inert gas as a purge gas (cooling chamber purge gas) for purging the atmosphere in the cooling chamber 204 through a gas supply pipe (cooling chamber gas supply pipe) 404 is supplied at a predetermined number. A gas supply nozzle (cooling chamber gas supply nozzle) 401 is installed as a cooling chamber purge gas supply unit that supplies a gas at a flow rate of 1. The gas supply nozzle 401 may be an open nozzle with an open nozzle end, preferably a multi-hole nozzle with a plurality of gas supply ports provided on the nozzle side wall facing the CS 108 side. Also, a plurality of gas supply nozzles 401 may be provided. The purge gas supplied from the gas supply nozzle 401 may be used as a cooling gas for cooling the processed wafers 200 placed on the CS 108 .

The cooling chamber 204 is preferably provided between the processing chambers 201-1 and 201-2 as shown in FIG. As a result, the moving distance (moving time) between the processing chamber 201-1 and the cooling chamber 204 can be made the same as the moving distance between the processing chamber 201-2 and the cooling chamber 204, and the tact time can be made the same. . Further, by providing the cooling chamber 204 between the processing chambers 201-1 and 201-2, the transfer throughput can be improved.

The CS 108 provided inside the cooling chamber 204 can hold four wafers 200 as shown in FIG. That is, the CS 108 is configured to cool at least twice as many wafers 200 (four) as the number of wafers 200 (two) heated in the processing chamber 201-1 or 201-2.

The cooling chamber 204 also includes an exhaust port 405 for exhausting the cooling chamber purge gas, an open/close valve (or APC valve) 406 as a cooling chamber exhaust valve for adjusting the gas exhaust amount, and a cooling chamber exhaust gas. An exhaust pipe 407 is provided as a pipe. A cooling chamber vacuum pump (not shown) for actively exhausting the atmosphere in the cooling chamber 204 may be provided in the exhaust pipe 407 downstream of the open/close valve 406 . The exhaust pipe 407 may be connected to a purge gas circulation structure for circulating the atmosphere in the transfer chamber 203, which will be described later, for circulation.

Further, the cooling case 109 is provided with a cooling chamber pressure sensor (cooling chamber pressure gauge) 408 for detecting the pressure in the cooling chamber 204 , and is detected by a transfer chamber pressure sensor (transfer chamber pressure gauge) 180 . MFC 403 as cooling chamber MFC and valve 402 as cooling chamber valve are controlled by a controller 121 to supply purge gas so that the differential pressure in the transfer chamber and the pressure in cooling chamber 204 are kept constant. Alternatively, the supply is stopped, and the opening/closing valve 405 and the cooling chamber vacuum pump are controlled to control the exhaust or stop of the purge gas. These controls control the pressure in the cooling chamber 204 and the temperature of the wafer 200 placed on the CS 108 . The gas supply nozzle 401, the valve 402, the MFC 403, and the gas supply pipe 404 mainly constitute a cooling chamber gas supply system (first gas supply unit). The piping 407 constitutes a cooling chamber gas exhaust system (cooling chamber gas exhaust portion). The cooling chamber gas exhaust system may include a cooling chamber vacuum pump. A temperature sensor (not shown) for measuring the temperature of the wafer 200 placed on the CS 108 may be provided in the cooling chamber 204 . Here, each of the wafer holding grooves 107a to 107d will be simply referred to as the wafer holding groove 107 unless it is necessary to distinguish between them.

(drive mechanism)
The configuration and operation of drive mechanism 267 will be described with reference to FIGS. 8 to 12. FIG.
As shown in FIGS. 9 and 10, the driving mechanism 267 includes an engaging portion 267a fixed to the bottom of the case 102, an input shaft 267b rotated by a driving portion (not shown), a rotation center RCi of the input shaft 267b and an eccentricity. and an output shaft 267c having a center of rotation RCo. Here, a recess is formed in the upper portion of the input shaft 267b, and gear teeth are provided on the inner periphery of the recess. The output shaft 267c has gear teeth on its outer periphery. The teeth of the concave portion of the input shaft 267b and the teeth of the output shaft 267c are fitted so as to rotate in opposite directions.

As shown in FIG. 8, the mounting table 210 is installed on the output shaft 267c through the shaft 255 so that the rotation center RCo of the output shaft 267c and the rotation center of the mounting table 210 are aligned. The rotation center RCb of the boat 217 (wafers 200) may coincide with the rotation center RCo of the output shaft 267c, or may be eccentric. The boat 217, output shaft 267c and input shaft 267b constitute a substrate holder.

By making the rotation center RCo of the output shaft 267c eccentric with respect to the rotation center RCi of the input shaft 267b, the rotation of the output shaft 267c moves on a revolving orbit around the rotation center RCi of the input shaft 267b. Also, regarding the revolution, the gear ratio between the input shaft 267b and the output shaft 267c can determine the number of rotations of the output shaft 267c for one rotation of the input shaft 267b. As a result, the center of rotation of the input shaft 167b is deviated with respect to the mounting table 210 which is placed on the output shaft 267c via the shaft 255, so that eccentric rotation occurs and a relationship of rotation and revolution is established. The number of rotations of the output shaft 267c, which is the number of rotations of the wafer 200, is preferably an integral multiple of the number of rotations of the input shaft 267b. By setting the number to an integral multiple, for example, the wafer 200 returns to its original position (substrate transfer position) after the processing is completed.

For example, when the ratio of the number of rotations of the input shaft 267b to the number of rotations of the output shaft 267c is 1:2, the wafer 200 moves along the trajectory shown in FIG. Here, the rotation center RCo of the output shaft 267c and the rotation center RCb of the wafer 200 coincide. While the wafer 200 makes one clockwise rotation (revolution) in accordance with the rotation of the input shaft 267b, the wafer 200 itself rotates counterclockwise (rotation). Note that notch 20 is shown in FIG. 11 so that the rotational position of wafer 200 is clear.

Further, when the ratio of the rotation speed of the input shaft 267b to the rotation speed of the output shaft 267c is 1:2, and the rotation center RCo of the output shaft 267c is shifted from the rotation center RCb of the wafer 200, the wafer 200 is as shown in FIG. move in a similar trajectory. Although the rotation (rotation) of the wafer 200 itself does not change, the trajectory (revolution) of the rotation draws an elliptical trajectory.

By changing the gear ratio (rotational speed) between the input shaft 267b and the output shaft 267c of the driving mechanism 267 in this way, the fixed point of the wafer 200 is eliminated. As a result, in the induction heating for irradiating the wafer 200 with an electromagnetic wave, it is possible to suppress a phenomenon in which a thick portion and a thin portion appear circumferentially due to the influence of a standing wave due to the wavelength and frequency of the electromagnetic wave. . Therefore, non-uniformity of the film thickness is improved.

(Control device)
As shown in FIG. 6, a controller 121, which is a control unit (control device, control means), includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I/O port 121d. Configured as a computer. The RAM 121b, storage device 121c, and I/O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input/output device 122 configured as, for example, a touch panel or the like is connected to the controller 121 .

The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe describing procedures and conditions of annealing (modification) processing, and the like are stored in a readable manner. The process recipe functions as a program in which the controller 121 executes each procedure in the substrate processing process described below and is combined so as to obtain a predetermined result. Hereinafter, the process recipe, the control program, and the like are collectively referred to simply as the program. Also, the process recipe is simply called a recipe. When the term "program" is used in this specification, it may include only a single recipe, only a single control program, or both. The RAM 121b is configured as a memory area (work area) in which programs and data read by the CPU 121a are temporarily held.

The I/O port 121d is connected to the transfer device 125, MFC 241, valve 243, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, drive mechanism 267, microwave oscillator 655, and the like.

The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read recipes from the storage device 121c in response to input of operation commands from the input/output device 122 and the like. The CPU 121a performs the substrate transfer operation by the transfer machine, the flow rate adjustment operation of various gases by the MFC 241, the opening and closing operation of the valve 243, and the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245 so as to follow the content of the read recipe. , start and stop of the vacuum pump 246, output adjustment operation of the microwave oscillator 655 based on the temperature sensor 263, rotation and rotation speed adjustment operation of the mounting table 210 (or boat 217) by the drive mechanism 267, or elevating operation, etc. is configured to

The controller 121 installs the above-described program stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 123 into a computer. It can be configured by The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are also collectively referred to simply as recording media. When the term "recording medium" is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both of them. The program may be provided to the computer using communication means such as the Internet or a dedicated line without using the external storage device 123 .

(2) Substrate processing process
Next, using the processing furnace of the substrate processing apparatus 100 described above, as one step of the manufacturing process of a semiconductor device (device), for example, an amorphous silicon film as a silicon-containing film formed on the substrate is reformed (crystallized). An example of the conversion) method will be described along the processing flow shown in FIG. In the following description, the controller 121 controls the operation of each component of the substrate processing apparatus 100 . In addition, in the same manner as in the processing furnace structure described above, in the substrate processing step in this embodiment as well, since the same recipe is used in a plurality of processing furnaces, substrate processing using one of the processing furnaces is performed. Only the processes will be described, and the description of the substrate processing process using the other processing furnace will be omitted.

Here, when the term "wafer" is used in this specification, it may mean the wafer itself, or it may mean a laminate of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "wafer surface" may mean the surface of the wafer itself or the surface of a predetermined layer formed on the wafer. In the present specification, the term "formation of a predetermined layer on a wafer" means that a predetermined layer is formed directly on the surface of the wafer itself, or a layer formed on the wafer, etc. It may mean forming a given layer on top of. In this specification, the terms "substrate" and "semiconductor substrate" have the same meaning as the term "wafer".

(Substrate extraction step (S801))
As shown in FIG. 1, the transfer machine 125 takes out a predetermined number of wafers 200 to be processed from the pod 110 opened by the load port unit 106, and places the wafers 200 on both the tweezers 125a-1 and 125a-2. place. That is, two wafers are placed on the low temperature tweezers 125a-1 and the high temperature tweezers 125a-2, and the two wafers are taken out from the pod 110. FIG.

(Substrate loading step (S802))
As shown in FIGS. 1 and 3, the wafers 200 placed on both the tweezers 125a-1 and 125a-2 are loaded (boat loaded) into a predetermined processing chamber 201 by opening and closing the gate valve 205. FIG. That is, two wafers placed on the low temperature tweezers 125 a - 1 and the high temperature tweezers 125 a - 2 are carried into the processing chamber 201 .

(Furnace pressure/temperature adjustment step (S803))
After loading the boat 217 into the processing chamber 201 is completed, the atmosphere inside the processing chamber 201 is controlled so that the pressure inside the processing chamber 201 reaches a predetermined pressure (for example, 10 to 102000 Pa). Specifically, while the vacuum pump 246 is evacuating, the valve opening degree of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245 to set the inside of the processing chamber 201 to a predetermined pressure. At the same time, the electromagnetic wave supplying unit may be controlled as preheating so that heating is performed up to a predetermined temperature (S803). When the temperature is raised to a predetermined substrate processing temperature by the electromagnetic wave supply unit, it is preferable to raise the temperature with an output smaller than the output of the modification process described later so that the wafer 200 is not deformed or damaged. When substrate processing is performed under atmospheric pressure, control may be performed such that the process proceeds to the inert gas supply step S804, which will be described later, after adjusting only the temperature inside the furnace without adjusting the pressure inside the furnace.

(Inert gas supply step (S804))
When the pressure and temperature in the processing chamber 201 are controlled to predetermined values by the furnace pressure/temperature adjustment step S803, the drive mechanism 267 rotates the shaft 255 to rotate the wafer 200 via the boat 217 on the mounting table 210. Let At this time, an inert gas such as nitrogen gas is supplied through the gas supply pipe 232 (S804). Further, at this time, the pressure in the processing chamber 201 is adjusted to a predetermined value in the range of 10 Pa to 102000 Pa, for example, 101300 Pa to 101650 Pa. The shaft may be rotated during the substrate loading step S402, that is, after the wafer 200 is completely loaded into the processing chamber 201. FIG.

(Modification step (S805))
When the inside of the processing chamber 201 is maintained at a predetermined pressure, the microwave oscillator 655 supplies microwaves into the processing chamber 201 through the components described above. By supplying microwaves into the processing chamber 201, the wafer 200 is heated to a temperature of 100° C. or higher and 1000° C. or lower, preferably 400° C. or higher and 900° C. or lower. , 500° C. or more and 700° C. or less. By processing the substrate at such a temperature, the wafer 200 is processed at a temperature at which microwaves are efficiently absorbed, and the speed of the modification processing can be improved. In other words, if the wafer 200 is processed at a temperature lower than 100° C. or higher than 1000° C., the surface of the wafer 200 will change in quality, making it difficult to absorb microwaves. Therefore, it becomes difficult to heat the wafer 200 immediately. Therefore, it is desirable to process the substrate in the temperature range described above.

In this embodiment, in which heating is performed by a microwave heating method, a standing wave is generated in the processing chamber 201, and the wafer 200 (when the susceptor 103 is mounted, the susceptor 103 is also the same as the wafer 200). , a heating concentration area (hot spot) that is locally heated and other areas that are not heated (non-heating area) are generated, and the wafer 200 (if the susceptor 103 is mounted, the susceptor 103 is also the same as the wafer 200). In order to suppress the deformation of the wafer 200, generation of hot spots on the wafer 200 is suppressed by controlling ON/OFF of the power source of the electromagnetic wave supply unit. At this time, it is possible to suppress the deformation of the wafer 200 by reducing the power supplied from the electromagnetic wave supply unit so that the influence of the hot spot is reduced. However, in this case, since the energy applied to the wafer 200 and the susceptor 103 is small, the temperature rise is also small, and it is necessary to lengthen the heating time.

Here, as described above, the temperature sensor 263 is a non-contact temperature sensor. Since the position of the monitored wafer 200 and the measurement angle with respect to the wafer 200 change, the measured value (monitor value) becomes inaccurate, and the measured temperature changes abruptly. In the present embodiment, a rapid change in the temperature measured by the radiation thermometer due to such deformation or breakage of the object to be measured is used as a trigger for turning ON/OFF the electromagnetic wave supply unit.

By controlling the microwave oscillator 655 as described above, the wafer 200 is heated and the amorphous silicon film formed on the surface of the wafer 200 is reformed (crystallized) into a polysilicon film (S805). That is, the wafer 200 can be uniformly modified. Note that when the measured temperature of the wafer 200 exceeds the above-described threshold value and becomes higher or lower, the output of the microwave oscillator 655 is controlled to be low instead of turning off the microwave oscillator 655. may fall within a predetermined range. In this case, the output of the microwave oscillator 655 is controlled to increase when the temperature of the wafer 200 returns to within a predetermined range.

When the preset processing time has elapsed, the rotation of the boat 217, gas supply, microwave supply, and evacuation through the exhaust pipe are stopped.

(Substrate Unloading Step (S806))
After the pressure in the processing chamber 201 is returned to atmospheric pressure, the gate valve 205 is opened to spatially communicate the processing chamber 201 and the transfer chamber 203 . After that, one heated (processed) wafer 200 placed on the boat 217 is transferred to the transfer chamber 203 by the high temperature tweezers 125a-2 of the transfer device 125 (S806).

(Substrate cooling step (S807))
One heated (processed) wafer 200 unloaded by the high temperature tweezers 125a-2 is moved to the cooling chamber 204 by the continuous operation of the transfer device 125b and the transfer device elevator 125c, where it is transferred to the high temperature tweezers. 125a-2 to CS 108; Specifically, as shown in FIG. 5A, the wafer 200a after the reforming step S805 held by the high-temperature tweezers 125a-2 is transferred to the wafer holding groove 107b provided in the CS 108, and The wafer 200a is cooled by being placed for a period of time (S807). At this time, as shown in FIG. 5B, when the cooled wafer 200b that has already been cooled in the CS 108 is mounted, the wafer 200a after the completion of the modification step S805 is placed in the wafer holding groove 107b. The high-temperature tweezers 125a-2 and the low-temperature tweezers 125a-1 transport the two cooled wafers 200b to the load port, that is, the pod 110 after being placed on the pod.

When two wafers 200 are collectively heated (processed) on the boat 217 in the processing chamber 201, the substrate unloading step (S806) and the substrate cooling step (S807) are successively performed multiple times (in this example, 2 times), two high-temperature wafers 200a are placed one by one on the CS 108 by the high-temperature tweezers 125a-2. At this time, when two cooled wafers 200b are placed on the CS 108, the two cooled wafers 200b are moved from the CS 108 to the pod 110 by the high temperature tweezers 125a-2 and the low temperature tweezers 125a-1. transported to As a result, the time during which the high-temperature tweezers 125a-2 hold the high-temperature wafer 200a can be shortened, so that the thermal load on the transfer device 125 can be reduced. Also, the time for cooling the wafer 200 can be lengthened.

As described above, the high-temperature tweezers 125a-2 are provided, and the high-temperature wafer 200a after heating (processing) in the processing chamber 201 is cooled to, for example, 100° C. or less in the processing chamber 201. Instead, it is moved to the CS 108 in the cooling chamber 204 while still at a relatively high temperature using the tweezers 125a-2 for high temperatures.

(Substrate accommodation step (S808))
The two wafers 200 cooled by the substrate cooling step S807 are removed from the cooling chamber 204 by the low temperature tweezers 125a-1 and the high temperature tweezers 125a-2 and transferred to a predetermined pod 110. do. By combining the single wafer transfer (carrying into the cooling chamber 204) and the double wafer transfer (transfer from the cooling chamber 204) in this manner, the transfer time of the wafer 200 can be increased.

By repeating the above operations, the wafer 200 is reformed, and the next substrate processing process is started. Further, although the configuration has been described in which substrate processing is performed by placing two wafers 200 on the boat 217, the present invention is not limited to this, and the boats installed in the processing chambers 201-1 and 201-2 respectively. The wafers 200 may be placed one by one on the 217 and subjected to the same processing, or by performing swap processing, two wafers 200 may be processed in the processing chambers 201-1 and 201-2. may At this time, the transfer destination of the wafer 200 may be controlled so that the number of times of substrate processing performed in each of the processing chambers 201-1 and 201-2 is the same. By controlling in this manner, the number of times substrate processing is performed in each of the processing chambers 201-1 and 201-2 becomes constant, and maintenance work such as maintenance can be performed efficiently. For example, if the processing chamber to which the wafer 200 was previously transferred is the processing chamber 201-1, the next wafer 200 is transferred to the processing chamber 201-2. 2 can be controlled.

According to this embodiment, one or more of the following effects can be obtained.

(a) In microwave annealing, a standing wave causes an electric field distribution, and fixed rotation of the central position of the substrate causes uneven heating due to hot spots. Therefore, by changing the center of rotation of the substrate, it is possible to reduce uneven heating.

(b) It is possible to reduce uneven heating by locating the center of the input shaft of the rotation mechanism at a position eccentric to the center of the substrate.

(c) The number of revolutions of the substrate is an integral multiple of the number of revolutions of the input shaft of the rotating mechanism. As a result, after the predetermined time has passed and the processing is finished, it is possible to return the substrate to the same position (substrate loading position) as when the rotation was started. is easier to carry out.

(d) The input shaft and the output shaft of the rotation mechanism part each have a gear, and the number of teeth of the gear of the input shaft and the number of teeth of the gear of the output shaft are integral multiples. As a result, after the predetermined time has passed and the processing is finished, it is possible to return the substrate to the same position (substrate loading position) as when the rotation was started. is easier to carry out.

The configuration of the embodiment described above can be changed as appropriate and used, and its effects can also be obtained. For example, in the above description, a process of modifying an amorphous silicon film into a polysilicon film as a film containing silicon as a main component was described, but the present invention is not limited to this, oxygen (O), nitrogen (N), carbon ( C) and hydrogen (H) may be supplied to modify the film formed on the surface of the wafer 200 . For example, when a hafnium oxide film (HfxOy film) as a high dielectric film is formed on the wafer 200, by supplying microwaves while supplying gas containing oxygen to heat the hafnium oxide film, can replenish the deficient oxygen, and improve the characteristics of the high dielectric film.

Although the hafnium oxide film is shown here, it is not limited to this, and aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), cerium ( Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W), and the like. That is, it can be suitably applied even when modifying a metal-based oxide film. That is, the above-described film formation sequence includes forming TiOCN film, TiOC film, TiON film, TiO film, ZrOCN film, ZrOC film, ZrON film, ZrO film, HfOCN film, HfOC film, HfON film, HfO film, TaOCN film, TaOC film, TaON film, TaO film, NbOCN film, NbOC film, NbON film, NbO film, AlOCN film, AlOC film, AlON film, AlO film, MoOCN film, MoOC film, MoON film, MoO film, WOCN film , WOC film, WON film, and WO film.

Moreover, not only the high dielectric film but also a film mainly composed of silicon doped with impurities may be heated. Films containing silicon as a main component include silicon nitride films (SiN films), silicon oxide films (SiO films), silicon oxycarbide films (SiOC films), silicon oxycarbonitride films (SiOCN films), silicon oxynitride films (SiON films). film) and other Si-based oxide films. Impurities include, for example, at least one of boron (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), arsenic (As), and the like.

Moreover, it may be a resist film based on at least one of methyl methacrylate PMMA, epoxy resin, novolak resin, polyvinyl phenyl resin, and the like.

In the above description, one step of the semiconductor device manufacturing process was described, but the present invention is not limited to this, and patterning processing in the manufacturing process of liquid crystal panels, patterning processing in the manufacturing process of solar cells, and patterning processing in the manufacturing process of power devices. It is also applicable to techniques for processing substrates, such as.

Note that the present disclosure is not limited to the above-described embodiments, and includes various modifications. For example, the above-described embodiments have been described in detail for better understanding of the present disclosure, and are not necessarily limited to those having all the configurations described.

Furthermore, the above-described configurations, functions, control devices, etc. have been described as examples of creating a program that implements part or all of them, but part or all of them can be implemented by hardware, such as by designing with an integrated circuit. Needless to say, it can be realized by That is, all or part of the functions of the processing unit may be realized by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array) instead of the program.

<Preferred Embodiment of the Present Disclosure>
Preferred embodiments are described below.

(Appendix 1)
According to one aspect of the present disclosure,
a processing chamber for processing substrates;
a microwave generator that generates microwaves;
a substrate holder that holds and holds a plurality of substrates;
A substrate processing apparatus is provided that includes an output shaft that supports the substrate holding portion, and a rotation mechanism portion that has an input shaft provided at a position eccentric to the output shaft.

(Appendix 2)
The substrate processing apparatus according to Appendix 1,
The output shaft is eccentric with respect to the center of the substrate.

(Appendix 3)
The substrate processing apparatus according to Appendix 1 or 2,
The input shaft and the output shaft are fitted together so that the input shaft and the output shaft rotate in opposite directions.

(Appendix 4)
The substrate processing apparatus according to any one of Appendices 1 to 3,
The rotation speed of the input shaft and the rotation speed of the output shaft are different.

(Appendix 5)
The substrate processing apparatus according to any one of Appendices 1 to 4,
The rotational speed of the output shaft is an integral multiple of the rotational speed of the input shaft.

(Appendix 6)
The substrate processing apparatus according to any one of Appendices 1 to 4,
The number of revolutions of the substrate is an integral multiple of the number of revolutions of the input shaft.

(Appendix 7)
The substrate processing apparatus according to any one of Appendices 1 to 6,
a concave portion is formed in the upper portion of the input shaft, and gear teeth are formed on the inner periphery of the concave portion;
Having gear teeth on the outer periphery of the output shaft,
The teeth of the recess of the input shaft and the teeth of the output shaft are fitted.

(Appendix 8)
a substrate holding unit that holds and stacks a plurality of substrates;
A substrate holding device is provided in which an output shaft that supports the substrate holding portion and an input shaft that is eccentric to the output shaft are provided.

(Appendix 9)
The substrate holding device according to appendix 8,
The output shaft is eccentric with respect to the center of the substrate.

(Appendix 10)
The substrate holding device according to appendix 8 or 9,
The input shaft and the output shaft are fitted together so that the input shaft and the output shaft rotate in opposite directions.

(Appendix 11)
The substrate holding device according to any one of Appendices 8 to 10,
The rotation speed of the input shaft and the rotation speed of the output shaft are different.

(Appendix 12)
The substrate holding device according to any one of Appendices 8 to 11,
The rotational speed of the output shaft is an integral multiple of the rotational speed of the input shaft.

(Appendix 13)
The substrate holding device according to any one of Appendices 8 to 11,
The number of revolutions of the substrate is an integral multiple of the number of revolutions of the input shaft.

(Appendix 14)
The substrate holding device according to any one of Appendices 8 to 13,
a concave portion is formed in the upper portion of the input shaft, and gear teeth are formed on the inner periphery of the concave portion;
Having gear teeth on the outer periphery of the output shaft,
The teeth of the recess of the input shaft and the teeth of the output shaft are fitted.

(Appendix 15)
A processing chamber for processing substrates, a microwave generating section for generating microwaves, a substrate holding section for holding a plurality of substrates loaded thereon, an output shaft for supporting the substrate holding section, and an eccentricity to the output shaft. a step of loading the substrate into the processing chamber of a substrate processing apparatus having a rotation mechanism portion provided with an input shaft at a position where the input shaft is positioned;
heating the substrate with the microwave;
A method for manufacturing a semiconductor device having

(Appendix 16)
A processing chamber for processing substrates, a microwave generating section for generating microwaves, a substrate holding section for holding a plurality of substrates loaded thereon, an output shaft for supporting the substrate holding section, and an eccentricity to the output shaft. a rotation mechanism portion provided with an input shaft at a position where the substrate is loaded into the processing chamber of a substrate processing apparatus;
heating the substrate with the microwave;
is provided by a computer causing the substrate processing apparatus to execute the above.

200 Wafer (substrate)
201 processing chamber 217 boat (substrate holder)
267 drive mechanism (rotation mechanism)
267b... Input shaft 267c... Output shaft 655... Microwave oscillator (microwave generator)

Claims (9)

a processing chamber for processing substrates;
a microwave generator that generates microwaves;
a substrate holder that holds and holds a plurality of substrates;
an output shaft that supports the substrate holding portion and is eccentric with respect to the center of the substrate ; a rotating mechanism portion that has an input shaft that is eccentric with respect to the output shaft;
A substrate processing apparatus having The output shaft and the input shaft are rotatable,
2. The substrate processing apparatus according to claim 1, wherein said input shaft and said output shaft are fitted together so that said input shaft and said output shaft rotate in opposite directions. 3. The substrate processing apparatus according to claim 2, wherein the number of revolutions of said input shaft and the number of revolutions of said output shaft are different. The output shaft and the input shaft are rotatable,
2. The substrate processing apparatus according to claim 1 , wherein the number of revolutions of said output shaft is an integral multiple of the number of revolutions of said input shaft. 2. The substrate processing apparatus according to claim 1, wherein the number of revolutions of said substrate is an integral multiple of the number of revolutions of said input shaft. a concave portion is formed in the upper portion of the input shaft, and gear teeth are formed on the inner periphery of the concave portion;
Having gear teeth on the outer periphery of the output shaft,
2. A substrate processing apparatus according to claim 1, wherein said teeth of said concave portion of said input shaft and said teeth of said output shaft are fitted. a substrate holding unit that holds and stacks a plurality of substrates;
A substrate holding device comprising an output shaft that supports the substrate holding portion and is eccentric with respect to the center of the substrate , and an input shaft that is eccentric to the output shaft. A processing chamber for processing substrates, a microwave generating section for generating microwaves, a substrate holding section for mounting and holding a plurality of substrates, a substrate holding section for supporting the substrates, and biased with respect to the center of the substrates. a step of carrying the substrate into the processing chamber of a substrate processing apparatus having a centered output shaft and a rotation mechanism portion having an input shaft provided at a position eccentric to the output shaft;
heating the substrate with the microwave;
A method of manufacturing a semiconductor device having A processing chamber for processing substrates, a microwave generating section for generating microwaves, a substrate holding section for mounting and holding a plurality of substrates, a substrate holding section for supporting the substrates, and biased with respect to the center of the substrates. a step of loading the substrate into the processing chamber of a substrate processing apparatus having a centered output shaft and a rotation mechanism portion having an input shaft provided at a position eccentric to the output shaft;
heating the substrate with the microwave;
A program that causes the substrate processing apparatus to execute by a computer.

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