JP7223938B2 - Method for manufacturing light emitting device - Google Patents

Description

TECHNICAL FIELD Embodiments relate to a light emitting device and a manufacturing method thereof.

Patent Document 1 discloses a side emission type light emitting device. In the light emitting device of Patent Document 1, the thickness between the light emitting surface and the back surface tends to increase due to the circuit board provided on the back surface side.

JP 2012-124191 A

An object of the embodiments is to provide a compact light-emitting device and a method for manufacturing the same.

A method for manufacturing a light-emitting device according to an embodiment provides an intermediate structure in which a first laminate and a second laminate adjacent to the first laminate are arranged in a first direction in a light reflecting member, The first laminated body and the second laminated body are respectively first electrodes and second electrodes arranged in a second direction orthogonal to the first direction, and semiconductor laminated bodies connected to the first electrodes and the second electrodes. and a translucent member disposed on the semiconductor laminate, the step of preparing an intermediate structure having a first surface where the first electrode and the second electrode are exposed from the light reflecting member; On the first surface, between the first electrode of the first laminate and the first electrode of the second laminate, and between the second electrode of the first laminate and the second electrode of the second laminate and cutting the light reflecting member and the pair of first conductive members positioned between the first laminate and the second laminate. and forming a pair of second conductive members on the cut surface so as to be connected to the pair of first conductive members, respectively.

A light emitting device according to an embodiment includes a structure, a pair of first conductive layers, and a pair of second conductive layers. The structure covers a side surface of a light-emitting element having a first electrode and a second electrode, a light-transmitting member provided on the light-emitting element, and a laminate including the light-emitting element and the light-transmitting member. a light reflecting member, wherein the first electrode and the second electrode have a first surface exposed from the light reflecting member, and a second surface continuous with the first surface and formed of the light reflecting member. . The pair of first conductive layers are connected to the first electrode and the second electrode on the first surface and reach the second surface. The pair of second conductive layers are provided over the first surface and the second surface, and are connected to the pair of first conductive layers, respectively.

According to the embodiments, it is possible to realize a compact light emitting device and a method for manufacturing the same.

1 is an end view showing a light emitting device according to a first embodiment; FIG. 1 is a front view showing a light emitting device according to a first embodiment; FIG. It is a bottom view showing the light emitting device according to the first embodiment. 1 is a rear view showing a light emitting device according to a first embodiment; FIG. 1 is an end view showing a light source device equipped with a light emitting device according to a first embodiment; FIG. It is a front view which shows the light source device which mounts the light-emitting device which concerns on 1st Embodiment. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 4B is an end view taken along line D-D' shown in FIG. 4A; FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 5B is an end view taken along line D-D' shown in FIG. 5A; FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 6B is an end view taken along line D-D' shown in FIG. 6A; FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 7B is an end view taken along line D-D' shown in FIG. 7A; FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 8B is an end view taken along line E-E' shown in FIG. 8A. FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 9B is an end view taken along line E-E' shown in FIG. 9A; FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 10B is an end view taken along line F-F' shown in FIG. 10A; FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 11B is an end view taken along line G-G' shown in FIG. 11A. FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 12B is an end view taken along line G-G' shown in FIG. 12A. FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 13B is an end view taken along line G-G' shown in FIG. 13A. FIG. FIG. 4 is a plan view showing the method for manufacturing the light emitting device according to the first embodiment; 14B is an end view taken along line G-G' shown in FIG. 14A; FIG. It is an end elevation which shows the light-emitting device which concerns on 2nd Embodiment. It is a top view which shows the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. 16B is an end view taken along line H-H' shown in FIG. 16A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. 17B is an end view taken along line H-H' shown in FIG. 17A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. 18B is an end view taken along line H-H' shown in FIG. 18A; FIG. It is an end elevation which shows the light-emitting device which concerns on 3rd Embodiment.

<First embodiment>
First, the first embodiment will be described.
Hereinafter, the configuration of the light emitting device according to this embodiment and the method for manufacturing the light emitting device will be described in order.

It should be noted that each drawing referred to below is schematic, and constituent elements are appropriately emphasized or omitted. Also, the dimensional ratios of the constituent elements do not necessarily match between the drawings. In the present disclosure, “perpendicular” and “perpendicular” include cases in which the angle formed by two straight lines, sides, planes, etc. is in the range of about 90° to ±3°, unless otherwise specified. In the present disclosure, “parallel” includes cases where the angle formed by two straight lines, sides, planes, etc. is in the range of 0° to ±3°, unless otherwise specified.

(Light emitting device 1)
FIG. 1 is an end view showing a light emitting device 1 according to this embodiment.
2A is a view of the light emitting device 1 shown in FIG. 1 as seen from direction A, FIG. 2B is a view of the light emitting device 1 shown in FIG. 1 as seen from direction B, and FIG. 2C is a view of the light emitting device 1 shown in FIG. is viewed from direction C. FIG. In FIGS. 2B and 2C, a portion of the light-emitting device 1 that is hidden from the outside is indicated by a dashed line.
FIG. 3A is an end view showing a light source device 50 equipped with the light emitting device 1 according to this embodiment, and FIG. 3B is a front view thereof.

As shown in FIGS. 1 and 2A to 2C, the light-emitting device 1 according to the present embodiment includes a light-emitting element 10 having a first electrode 11a and a second electrode 11b, and a translucent electrode provided on the light-emitting element 10. A structure 40 having a member 14 and a light reflecting member 21 covering a side surface of a laminate 20 including the light emitting element 10 and the translucent member 14 is provided. The structure 40 has a first surface 40a where the first electrode 11a and the second electrode 11b are exposed from the light reflecting member 21, and a second surface 40b which is continuous with the first surface 40a and made of the light reflecting member 21. In addition, the light emitting device 1 includes a pair of first conductive layers 25a and 25b connected to the first electrode 11a and the second electrode 11b on the first surface 40a of the structure 40 and reaching the second surface 40b, and the second electrode 11b. A pair of second conductive layers 26a and 26b provided over the first surface 40a and the second surface 40b and connected to the pair of first conductive layers 25a and 25b, respectively.

Each component will be described in detail below.

The structure 40 includes a third surface (light emitting surface) 40c, a first surface (back surface) 40a located on the opposite side of the third surface 40c, and a first surface connected to the third surface 40c and the first surface 40a. It has a second surface (mounting surface) 40b that is continuous with 40a. The structure 40 shown in FIG. 1 and the like further has a fourth surface 40d located on the opposite side of the second surface 40b, a fifth surface 40e and a sixth surface 40f. The third surface (light emitting surface) 40c is continuous with the second surface 40b, the fourth surface 40d, the fifth surface 40e, and the sixth surface 40f via ridge lines. The first surface (back surface) 40a is continuous with the second surface 40b, the fourth surface 40d, the fifth surface 40e, and the sixth surface 40f via ridge lines. The fifth surface 40e and the sixth surface 40f are flat and entirely formed of the light reflecting member 21. As shown in FIG.

The shape of the structure 40 is, for example, a substantially rectangular parallelepiped. The light-emitting device 1 is a side-view type light-emitting device in which the second surface 40b is used as a mounting surface, and the second surface 40b and the upper surface of the mounting substrate are arranged to face each other.

Structure 40 has at least one laminate 20 . The laminate 20 functions as the light source of the light emitting device 1 and has the light emitting element 10 and the translucent member 14 . The light emitting element 10 is, for example, a light emitting diode (LED), and has a semiconductor laminate 12, a first electrode 11a and a second electrode 11b. In the semiconductor laminated body 12, an n layer, a light emitting layer, and a p layer are laminated. One of the n layer and the p layer is connected to the first electrode 11a, and the other is connected to the second electrode 11b. there is The first electrode 11 a and the second electrode 11 b are exposed from the light reflecting member 21 on the first surface 40 a of the structure 40 . Thereby, the heat generated by the light emitting element 10 can be efficiently radiated from the first surface 40 a of the structure 40 . In FIG. 1, the first surface 40a is flat, and the light reflecting member 21 is provided around the first electrode 11a and the second electrode 11b. The structure 40 can have a metal layer such as gold on the surfaces of the first electrode 11a and the second electrode 11b on the first surface 40a. As a result, even when the first electrode 11a and the second electrode 11b are made of an easily oxidizable material such as copper, the surface of each electrode can be prevented from being oxidized.

A translucent member 14 is provided on the light emitting element 10 . By disposing the translucent member 14 on the light emitting element 10, the light emitting element 10 can be protected from external stress. The side surface of the translucent member 14 is covered with the light reflecting member 21 . As a result, the contrast between the light-emitting region and the non-light-emitting region can be increased, and the light-emitting device can be made to have good visibility. In FIG. 1, the third surface 40c, which is the light emitting surface, is flat, and the light reflecting member 21 is provided around the translucent member 14. As shown in FIG.

The translucent member 14 can have phosphor layers 15 a and 15 b (hereinafter collectively referred to as “phosphor layers 15 ”) and/or a translucent layer 16 . The translucent member 14 preferably has a phosphor layer 15 containing a phosphor. As a result, the light emitted by the light emitting element 10 and the light emitted by the phosphor can be mixed to output desired mixed color light. The phosphor may be uniformly dispersed in the phosphor layer 15 , or the phosphor may be unevenly distributed on the light emitting element 10 side of the upper surface of the phosphor layer 15 . By unevenly distributing the phosphor closer to the light emitting element 10 than the upper surface of the phosphor layer 15, it is possible to easily suppress deterioration of the phosphor, which is sensitive to moisture, due to moisture. Examples of phosphors that are sensitive to moisture include manganese-activated fluoride-based phosphors. Manganese-activated fluoride-based phosphors are preferable phosphors from the viewpoint of color reproducibility because they can emit light with a relatively narrow spectral line width. The phosphor may be one type of phosphor, or may be a plurality of types of phosphors.

The phosphor layer 15 can have multiple phosphor layers. In the example shown in FIG. 1, the phosphor layer 15 has a phosphor layer 15a and a phosphor layer 15b. For example, the phosphor layer 15a contains a β-sialon phosphor, and the phosphor layer 15b contains a manganese-activated fluoride phosphor. The phosphor layer 15 may be a single layer, and the single layer phosphor layer 15 may contain the manganese-activated fluoride-based phosphor and the β-sialon-based phosphor.

In FIG. 1, the translucent member 14 has a phosphor layer 15a, a phosphor layer 15b, and a translucent layer 16 laminated in this order. In each of the phosphor layers 15a and 15b, a phosphor is contained in a base material made of a transparent material. As a result, the light emitting device 1 mixes the light output from the light emitting element 10, the light emitted by the phosphor in the phosphor layer 15a, and the light emitted by the phosphor in the phosphor layer 15b to obtain a desired color. It can output mixed color light. In one example, the light emitting element 10 outputs blue light, the phosphor layer 15a emits green light, the phosphor layer 15b emits red light, and the light emitting device 1 as a whole outputs white light. . The translucent layer 16 is made of a transparent material and does not substantially contain phosphor. In the present specification, "substantially free of" means that unavoidable contamination is allowed.

The laminate 20 can have a light guide member 13 between the light emitting element 10 and the translucent member 14 . The light guide member 13 covers the side surface of the light emitting element 10 and guides the light emitted from the side surface of the light emitting element 10 toward the upper surface of the light emitting device 1 (the third surface 40c that is the light emitting surface). By arranging the light guide member 13 on the side surface of the light emitting element 10 , it is possible to suppress part of the light reaching the side surface of the light emitting element 10 from being reflected by the side surface and attenuating within the light emitting element 10 . The light guide member 13 can cover the top and side surfaces of the light emitting element 10 . Thereby, the adhesion strength between the light emitting element 10 and the light guide member 13 can be improved. The light guide member 13 is, for example, a member containing a resin material as a base material. As the resin material, translucent resins such as silicone resins, silicone-modified resins, epoxy resins, and phenol resins can be suitably used. In addition, it is preferable that the light guide member 13 has a high light transmittance. Therefore, it is preferable that the light guide member 13 does not have a substance that reflects, absorbs, or scatters light. For the light guide member 13, a member having a higher transmittance of light from the light emitting element 10 than the light reflecting member 21 is selected.

The light reflecting member 21 constitutes the outer surface of the light emitting device 1 . In the light emitting device 1 shown in FIGS. 1 and 2A to 2C, the light reflecting member 21 includes the first surface 40a, the second surface 40b, the third surface 40c, the fourth surface 40d, the fifth surface 40e and the It is positioned on either outer surface of the sixth surface 40f. Also, the light reflecting member 21 covers the side surface of the light emitting element 10 and the side surface of the translucent member 14 . Since the light reflecting member 21 is positioned on the side of the light emitting element 10, the light emitted to the side of the light emitting element 10 can be reflected by the light reflecting member 21, and the light can be efficiently extracted upward. can be done. It is preferable that the light reflecting member 21 also cover the lower surface of the light emitting element 10 . Thereby, for example, the light emitted downward from the light emitting element 10 can be reflected upward. In addition, since the light reflecting member 21 covers the lower surface of the light emitting element 10, the adhesion strength between the light emitting element 10 and the light reflecting member 21 can be improved.

The thermal expansion coefficient difference between the light guide member 13 and the light emitting element 10 (this is referred to as “first thermal expansion coefficient difference ΔT30”) and the thermal expansion coefficient difference between the light reflecting member 21 and the light emitting element 10 (this is referred to as “ It is preferable to select the material of the light reflecting member 21 so that, for example, ΔT40<ΔT30 when compared with a second thermal expansion coefficient difference ΔT40″. This can prevent the light guide member 13 from peeling off from the light emitting element 10 .

The light emitting device 1 further has a pair of first conductive layers 25a and 25b and a pair of second conductive layers 26a and 26b. The pair of first conductive layers 25 a and 25 b and the pair of second conductive layers 26 a and 26 b function as external electrodes of the light emitting device 1 .

A pair of first conductive layers 25 a and 25 b are provided on the first surface (back surface) 40 a of the structure 40 . The first conductive layer 25 a has one end connected to the first electrode 11 a of the light emitting element 10 and the other end reaching the second surface 40 b of the structure 40 . The first conductive layer 25 b has one end connected to the second electrode 11 b of the light emitting element 10 and the other end reaching the second surface 40 b of the structure 40 . The first conductive layer 25a and the first conductive layer 25b are separated from each other. The first conductive layers 25a and 25b are made of a conductive material, such as a solidified conductive paste. The shape of each of the pair of first conductive layers 25a and 25b is, for example, columnar or semi-columnar.

A pair of first conductive layers 25 a and 25 b are electrically connected to the first electrode 11 a and the second electrode 11 b of the light emitting element 10 . 1 and 2C, the pair of first conductive layers 25a and 25b are electrically connected only to the side surfaces of the first electrode 11a and the second electrode 11b of the light emitting element 10. In FIGS. Note that the pair of first conductive layers 25a and 25b may be electrically connected only to the lower surfaces of the first electrode 11a and the second electrode 11b of the light emitting element 10. It may be electrically connected to both the side surface and the bottom surface.

The pair of first conductive layers 25 a and 25 b are preferably separated from the fifth surface 40 e and the sixth surface 40 f of the structure 40 . Accordingly, when the light-emitting device 1 is mounted on the mounting board using the bonding member, it is possible to prevent the bonding member from flowing outside the fifth surface 40e and the sixth surface 40f. As a result, the mounting area of the light emitting device 1 including the bonding member can be reduced. For example, when a plurality of light emitting devices arranged on a mounting substrate is used as a light source for an edge-type liquid crystal display device, the space between the light emitting devices tends to be dark. However, by arranging the first conductive layers 25a and 25b as described above, the fifth surface 40e of one light emitting device and the sixth surface 40f of the other adjacent light emitting device face each other on the mounting substrate. , the distance between each light emitting device can be shortened. As a result, dark areas can be reduced between the light emitting devices. In addition, the corners of the light emitting device 1 including the boundary between the fifth surface 40e or the sixth surface 40f and the first surface 40a are likely to be chipped or deformed by an external force. However, since the first conductive layers 25a and 25b are separated from the fifth surface 40e and the fifth surface 40f, even if the above external force is applied to the corners of the light emitting device 1, the external force is The possibility of affecting 25a and 25b can be reduced.

The first conductive layers 25a and 25b may extend to the fifth surface 40e and the sixth surface 40f. In this case, for example, the ends of the first conductive layers 25a and 25b can be aligned with the ends of the fifth surface 40e and the sixth surface 40f. Also, portions of the first conductive layers 25a and 25b can be formed on the fifth surface 40e and the sixth surface 40f in addition to the first surface 40a. Thereby, the heat dissipation of the light-emitting device 1 can be improved.

The pair of first conductive layers 25a and 25b are preferably disposed within a pair of grooves 105a and 105b on the first surface (rear surface) 40a, as shown in FIG. 2C. The first conductive layer 25a is located within the groove 105a, and the first conductive layer 25b is located within the groove 105b. A pair of grooves 105a and 105b are formed between the first and second electrodes 11a and 11b and the second surface 40b.

In FIG. 2C, the pair of grooves 105a and 105b reach both the first and second electrodes 11a and 11b and the second surface 40b. The pair of grooves 105a and 105b may reach only one of the first electrode 11a and the second electrode 11b and the second surface 40b, or may be separated from both. When the pair of grooves 105a and 105b reach the first electrode 11a and the second electrode 11b, part of the grooves can also be formed on the first electrode 11a and the second electrode 11b. Thereby, the adhesion strength between the pair of first conductive layers 25a and 25b and the structure 40 can be improved. By arranging the pair of first conductive layers 25a and 25 in the pair of grooves 105a and 105b, the adhesion strength between the light reflecting member 21 and the first conductive layers 25a and 25b can be improved. The pair of grooves 105a and 105b can be formed by, for example, irradiating the first surface (back surface) 40a of the structure 40 with a laser in the structure 40 before forming the first conductive layer and the second conductive layer. can.

The pair of second conductive layers 26a and 26b are provided from the first surface (back surface) 40a of the structure 40 to the second surface (mounting surface) 40b. The second conductive layers 26a and 26b are made of a conductive material, such as a solidified conductive paste. The second conductive layer 26a and the second conductive layer 26b are separated from each other. The second conductive layer 26a is connected to the first conductive layer 25a, and the second conductive layer 26b is connected to the first conductive layer 25b. Since the pair of second conductive layers 26a and 26b are formed from the first surface (back surface) 40a of the structure 40 to the second surface (mounting surface) 40b, the heat generated by the light emitting element 10 is transferred to the first surface. Heat can be efficiently radiated from both the 40a side and the second surface 40b side. The shape of the second conductive layers 26a and 26b is, for example, a substantially disc shape that is bent at the boundary between the first surface 40a and the second surface 40b of the structure 40 .

On the second surface 40b, the second conductive layers 26a and 26b are preferably separated from the third surface (light exit surface) 40c. As a result, when the light emitting device 1 is mounted on the mounting substrate using the bonding member, it is possible to prevent the bonding member from flowing toward the third surface (light emitting surface) 40c. As a result, it is possible to reduce the possibility that the light emitted from the light emitting device 1 is blocked by the bonding member.

The second conductive layers 26a and 26b may extend to the third surface 40c. In this case, for example, the ends of the second conductive layers 26a and 26b can be aligned with the ends of the third surface 40c. Also, portions of the second conductive layers 26a and 26b can be formed on the third surface 40c in addition to the second surface 40b. Thereby, the heat dissipation of the light-emitting device 1 can be improved.

Also, the second conductive layers 26a and 26b are preferably separated from the fifth surface 40e and the sixth surface 40f. Accordingly, when the light emitting device 1 is mounted on the mounting substrate using the bonding member, it is possible to prevent the bonding member from flowing outside the fifth surface 40e and the sixth surface 40f. As a result, the mounting area of the light emitting device 1 including the bonding member can be reduced.

The second conductive layers 26a and 26b may extend to the fifth surface 40e and the sixth surface 40f. In this case, for example, the ends of the second conductive layers 26a and 26b can be aligned with the ends of the fifth surface 40e and the sixth surface 40f. Also, portions of the second conductive layers 26a and 26b can be formed on the fifth surface 40e and the sixth surface 40f in addition to the second surface 40b. Thereby, the heat dissipation of the light-emitting device 1 can be improved.

In the direction from the fifth surface 40e to the sixth surface 40f, the width of the first conductive layers 25a and 25b and the width of the second conductive layers 26a and 26b are constant and can be the same width. As a result, for example, it is possible to prevent stress from concentrating on a portion where the width of the conductive layer is narrowed, thereby preventing cracks or the like from occurring at that portion. The width of the first conductive layers 25a and 25b may be different from the width of the second conductive layers 26a and 26b. The planar shape of the first conductive layer 25a and the planar shape of the first conductive layer 25b may be different, and the planar shape of the second conductive layer 26a and the planar shape of the second conductive layer 26b may be different. Thereby, for example, the polarity of the light emitting device 1 can be determined from the appearance.

Next, a light source device 50 using the light emitting device 1 according to this embodiment will be described.
As shown in FIGS. 3A and 3B, the light emitting device 1 constitutes part of the light source device 50 . A mounting substrate 51 is provided in the light source device 50, and the light emitting device 1 is mounted on a mounting surface 51a of the mounting substrate 51 via a pair of bonding members 52a and 52b. The light-emitting device 1 is arranged such that the second surface (mounting surface) 40 b of the structure 40 faces the mounting surface 51 a of the mounting substrate 51 . The joining members 52a and 52b are made of a conductive material, such as solder.

The wiring of the mounting substrate 51 is connected to the pair of second conductive layers 26a and 26b of the light emitting device 1 via the pair of joint members 52a and 52b, respectively. As a result, power is supplied to the light emitting device 1 through the pair of bonding members 52a and 52b, and the light L is emitted from the light emitting device 1. As shown in FIG. The main emitting direction of the light L is substantially parallel to the mounting surface 51 a of the mounting substrate 51 . In this manner, the side emission type light source device 50 is realized. A plurality of light emitting devices 1 can be arranged on the mounting substrate 51 , and the plurality of light emitting devices 1 are preferably arranged along one direction parallel to the mounting surface 51 a of the mounting substrate 51 .

In addition, as shown in FIG. 3B, an adhesive member 53 made of a resin material may be provided between the joint member 52a and the joint member 52b. The light emitting device 1 is bonded to the mounting substrate 51 by the bonding member 53 in addition to the pair of bonding members 52a and 52b. Thereby, the bonding strength between the light emitting device 1 and the mounting substrate 51 can be increased. Further, by positioning the adhesive member 53 between the pair of joint members 52, for example, when the pair of joint members 52a and 52b are melted, they can be prevented from coming into contact with each other unintentionally. That is, by arranging the insulating bonding member 53 between the pair of bonding members 52a and 52b, an electrical short circuit in the light emitting device 1 can be easily suppressed. The adhesive member 53 can be made of, for example, epoxy resin. If an epoxy resin is used as the base material of the light reflecting member 21, the bonding strength between the adhesive member 53 and the light reflecting member 21 can be further improved. Only the light reflecting member 21 of the light emitting device 1 may be in contact with the adhesive member 53 .

Next, a method for manufacturing the light emitting device according to this embodiment will be described. The method for manufacturing the light emitting device according to the present embodiment includes steps of preparing the intermediate structural body 30, forming the first conductive members 25c and 25d, forming the cut surface 106, forming the second conductive member 26a and 26b.

4A to 14B are diagrams showing the manufacturing method of the light emitting device according to this embodiment. 4A, 5A, and 6A to 14A are plan views, and FIGS. 4B, 5B, and 6B to 14B are end views corresponding to the plan views. FIG. 4B is an end view along line D-D' shown in FIG. 4A, showing the same process as in FIG. 4A. The same applies to FIGS. 5B to 7B. FIG. 8B is an end view along line E-E' shown in FIG. 8A, showing the same process as in FIG. 8A. The same applies to FIG. 9B. FIG. 10B is an end view along line F-F' shown in FIG. 10A, showing the same process as in FIG. 10A. FIG. 11B is an end view along line G-G' shown in FIG. 11A, showing the same process as in FIG. 11A. The same applies to FIGS. 12B, 13B, and 14B.

(Step of preparing intermediate structure 30)
First, the intermediate structural body 30 is prepared in which the first laminated body 20A and the second laminated body 20B adjacent to the first laminated body 20A are arranged in the light reflecting member 21 in the first direction (X direction). The first stacked body 20A and the second stacked body 20B are respectively composed of first electrodes 11a and second electrodes 11b arranged in a second direction (Y direction) orthogonal to the first direction (X direction), and first electrodes 11a and 11b. A semiconductor laminate 12 connected to 11a and the second electrode 11b, and a translucent member 14 arranged on the semiconductor laminate 12 are provided. The intermediate structure 30 has a first surface 30a where the first electrode 11a and the second electrode 11b are exposed from the light reflecting member 21. As shown in FIG. The intermediate structural body 30 may be prepared by being manufactured by an example of the manufacturing process described below, or may be prepared by purchasing a pre-manufactured intermediate structural body 30 . Hereinafter, a plurality of laminated bodies including the first laminated body 20A and the second laminated body 20B will be collectively referred to as "laminated body 20". Also, the first electrode 11a and the second electrode 11b are collectively referred to simply as "electrodes".

An example of manufacturing and preparing the intermediate structure 30 will be described below in order.
First, as shown in FIGS. 4A and 4B, a substrate 100 is prepared. The substrate 100 has, for example, an insulating base material as a base material, and a metal layer 101a and a metal layer 101b are provided on the upper surface 100a. A plurality of pairs of metal layers 101a and 101b are arranged in a matrix, for example.

In the following description, an XYZ orthogonal coordinate system is used for convenience. The direction in which the metal layer 101a is arranged and the direction in which the metal layer 101b is arranged are defined as the "X direction", and the direction in which the pair of metal layers 101a and 101b are arranged is defined as the "Y direction". and the direction perpendicular to the Y direction, that is, the direction perpendicular to the upper surface 100a is defined as the “Z direction”.

A convex portion 101c may be provided on the upper surface of the metal layer 101a and the metal layer 101b. The convex portion 101c is located in a region facing the first electrode 11a and the second electrode 11b of the light emitting element 10 . The planar shape of the upper surface of the convex portion 101c is preferably substantially the same as the planar shape of the corresponding first electrode 11a and second electrode 11b of the light emitting element 10 . As a result, when the light emitting element 10 is arranged on the pair of protrusions 101c via the bonding member 103, which will be described later, self-alignment works effectively on the light emitting element 10, and the mounting accuracy of the light emitting element 10 can be improved. can. For example, the planar shape of the projection 101c and the electrode of the light emitting element 10 is a rectangular shape in which corresponding sides have approximately the same length (allowable range is ±5% or less, preferably ±3% or less). can be In this embodiment, in order to simplify the drawing, an example in which only four pairs of metal layers 101a and 101b are provided on the substrate 100 is shown, but the present invention is not limited to this, and more metal layers can be used. 101a and 101b may be provided.

The substrate 100 is removed during a series of steps for manufacturing the light emitting device 1, as will be described later. The maximum thickness of the substrate 100 is, for example, 100 μm or more and 500 μm or less, preferably 200 μm or more and 300 μm or less. This makes it possible to facilitate the removal process of the substrate 100 while maintaining the strength of the substrate 100 . Glass fiber reinforced resin, for example, can be used as the base material of the substrate 100 . As the glass fiber reinforced resin, it is preferable to use, for example, BT resin having a thermal expansion coefficient of 3 ppm/°C to 10 ppm/°C. Thereby, a joining member having a high melting point such as an AuSn alloy can be used as the joining member 103 . Also, the glass fiber reinforced resin may be an FR4 material having a thermal expansion coefficient of 14 to 15 ppm/°C. In this case, the reliability of the substrate 100 can be ensured by using solder or the like with a low melting point as the bonding member 103 . Further, the content of the glass fiber contained in the base material is, for example, 30% to 70% by weight, preferably 40% to 60% by weight. Thereby, the substrate 100 can be easily removed.

The metal layers 101a and 101b can be formed using copper, a copper alloy, or the like as a base material, for example. Alternatively, the metal layers 101a and 101b may be formed by plating a copper or copper alloy base material with nickel plating containing phosphorus, palladium plating, first gold plating and second gold plating in this order. By laminating the above plating on a base material containing copper or a copper alloy, it is possible to suppress the diffusion of the copper component contained in the copper or copper alloy, and furthermore, the surfaces of the metal layers 101a and 101b may be oxidized, sulfided, or the like. corrosion can be suppressed. Thereby, for example, even if the substrate 100 is stored for a long period of time, deterioration of the substrate 100 can be suppressed.

Substrate 100 preferably has alignment marks 102 on top surface 100a. The alignment mark 102 is a mark for grasping the positional relationship between the metal layer 101a and the metal layer 101b when viewed from the upper surface 100a side. The alignment mark 102 can have a shape of a convex portion, a concave portion, or a combination of a convex portion and a concave portion. The position and number of the alignment marks 102 are arbitrary, but they are arranged at positions not covered by the light reflecting member 21 in the later steps.

The alignment marks 102 can be formed simultaneously with the steps of forming the metal layers 101a and 101b. This improves the positioning accuracy in the process of mounting the light emitting element 10 using the alignment marks 102 described later. The alignment mark 102 can be, for example, a member in which phosphorous-containing nickel plating, palladium plating, first gold plating and second gold plating are laminated in this order on a copper or copper alloy base material.

Next, as shown in FIGS. 5A and 5B, a bonding member 103 is provided on the metal layer 101a and the metal layer 101b. The joining member 103 is solder, for example. When the metal layer 101a and the metal layer 101b have the convex portion 101c, the joining member 103 is provided on the convex portion 101c. Then, the light emitting element 10 is mounted on the substrate 100 using the alignment mark 102 as a reference. The light emitting element 10 is, for example, a light emitting diode (LED), and outputs blue light, for example.

The light emitting element 10 is provided with a first electrode 11a, a second electrode 11b, and a semiconductor laminate 12 . The light emitting element 10 is mounted such that the lower surfaces of the first electrode 11a and the second electrode 11b and the upper surfaces of the metal layers 101a and 101b of the substrate 100 are opposed to each other. The light emitting element 10 may have a growth substrate on the surface of the semiconductor laminate 12 opposite to the surface connected to the first electrode 11a and the second electrode 11b. In the semiconductor laminate 12, an n layer, a light emitting layer and a p layer are laminated. One of the n-layer and p-layer is connected to the first electrode 11a, and the other is connected to the second electrode 11b. When the first electrode 11a and the second electrode 11b are made of a metal material such as copper, it is preferable to provide a metal layer such as gold on the surface of the first electrode 11a and the second electrode 11b. This can suppress oxidation of the surfaces of the first electrode 11a and the second electrode 11b. By mounting the light emitting element 10 on the substrate 100, the first electrode 11a of the light emitting element 10 is connected to the metal layer 101a via the bonding member 103, and the second electrode 11b is connected to the metal layer 101b via the bonding member 103. be done.

Next, as shown in FIGS. 6A and 6B, the translucent member 14 is prepared. The translucent member 14 is, for example, a member in which a phosphor layer 15a, a phosphor layer 15b, and a translucent layer 16 are laminated. The translucent member 14 is formed, for example, by laminating a phosphor layer 15a, a phosphor layer 15b, and a translucent layer 16 made of sheet-like resin layers in this order.

Next, as shown in FIGS. 7A and 7B, an adhesive layer 13a made of a resin material is arranged on the upper surface of the light emitting element 10. Next, as shown in FIGS. Then, the translucent member 14 is adhered to the light emitting element 10 via the adhesive layer 13a. When the translucent member 14 has the phosphor layer 15a, the phosphor layer 15b, and the translucent layer 16, the translucent member 14 is attached to the light emitting element 10 in such a direction that the phosphor layer 15a and the adhesive layer 13a are in contact with each other. placed on top of the At this time, the adhesive layer 13 a overflows from between the light emitting element 10 and the translucent member 14 to cover the side surfaces of the light emitting element 10 . After that, the adhesive layer 13a is solidified. Thereby, the translucent member 14 is adhered to the light emitting element 10 . The solidified adhesive layer 13 a becomes the light guide member 13 .

By covering the side surface of the light emitting element 10 in addition to the upper surface of the light emitting element 10 with the light guide member 13, the adhesion between the translucent member 14 and the light emitting element 10 can be improved. In addition, by covering the light emitting layer of the light emitting element 10 with the light guide member 13, it is possible to suppress part of the light that has reached the side surface of the light emitting element 10 from being reflected by the side surface and attenuating inside the light emitting element 10. can be extracted to the outside of the laminate 20 through the light guide member 13 . Thereby, the light extraction efficiency in the light emitting device 1 can be improved. In order to obtain this effect, it is preferable that the light transmittance of the light guide member 13 is high. Therefore, it is generally preferred that the light guide member 13 does not substantially contain additives that reflect, absorb, or scatter light. However, the light guide member 13 may contain light diffusing particles and/or phosphors.

In this manner, on the substrate 100, the first electrode 11a and the second electrode 11b arranged in the Y direction, the semiconductor laminate 12 connected to the first electrode 11a and the second electrode 11b, and the semiconductor laminate 12 A plurality of laminates 20 including the arranged translucent members 14 are formed. A plurality of stacked bodies 20 are arranged along at least the X direction. The multiple laminates 20 may be arranged in a matrix along both the X direction and the Y direction. Among the plurality of laminates 20, two laminates 20 adjacent in the X direction are also referred to as a first laminate 20A and a second laminate 20B.

Next, as shown in FIGS. 8A and 8B, the light reflecting member 21 is formed on the substrate 100. FIG. The light reflecting member 21 covers the metal layers 101 a and 101 b, the joining member 103 and the laminate 20 . The process of forming the light reflecting member 21 includes, for example, placing the substrate 100 on which a plurality of laminates 20 are formed in a mold, injecting a resin material that will become the light reflecting member 21 into the mold, and filling the resin material. It can be carried out by solidification. The light reflecting member 21 can be formed by a method such as transfer molding, injection molding, compression molding or potting. It is preferable to form the light reflecting member 21 so as not to cover the alignment mark 102 . The light reflecting member 21 is made of, for example, white resin. In this manner, the intermediate structure 30 including the light reflecting member 21 and the multiple laminates 20 is formed on the substrate 100 . In the intermediate structural body 30 , a plurality of laminates 20 are arranged at least along the X direction within the light reflecting member 21 .

Next, as shown in FIGS. 9A and 9B, the light reflecting member 21 is removed from the upper surface of the intermediate structure 30. Next, as shown in FIGS. As a result, the translucent layer 16 of the translucent member 14 is exposed on the newly formed upper surface of the light reflecting member 21 . When removing the light reflecting member 21, in addition to the light reflecting member 21, part of the translucent layer 16 located thereunder may be removed. By arranging the translucent layer 16 above the phosphor layer 15b, it is possible to reduce the possibility of the phosphor layer 15b being unintentionally removed in the step of removing the light reflecting member 21. FIG. As a method for removing the light reflecting member 21, known methods such as grinding, etching, cutting, and blasting can be used.

Next, as shown in FIGS. 10A and 10B, the upper surface of intermediate structure 30 is fixed to carrier 122 via adhesive sheet 121 . Carrier 122 is, for example, a silicon wafer or a metal substrate. In the following description, the vertical direction of the drawings is reversed with respect to the description so far. That is, in FIGS. 4A to 9B, the direction from the semiconductor laminate 12 to the translucent member 14 is the upper direction in the drawing, but in FIGS. , is the upward direction in the drawing, and the description is also given accordingly. For example, the surface of the intermediate structural body 30 on the substrate 100 side is referred to as "upper surface 30a".

Next, substrate 100 is removed. In the step of removing the substrate 100, the range from the upper side of the substrate 100 to part of the first electrode 11a and the second electrode 11b of the light emitting element 10 is removed. At this time, part of the light reflecting member 21 and part of the joining member 103 are also removed. Note that the joining member 103 may be partially removed, or may be entirely removed. By removing the substrate 100, the size of the light emitting device 1 after manufacturing can be reduced.

As a method for removing the substrate 100, known methods such as grinding, etching, cutting, and blasting can be used. In particular, it is preferable to use grinding as a method for removing the substrate 100 . As a result, the exposed surface of the light reflecting member 21, the exposed surface of the first electrode 11a, the exposed surface of the second electrode 11b, and the exposed surface of the bonding member 103 are positioned on the same plane, and the upper surface 30a of the intermediate structural body 30 is aligned. can be flattened. As a result, variations in the shape of the plurality of light emitting devices 1 to be manufactured can be suppressed. Thus, the intermediate structure 30 can be prepared. The first electrode 11 a and the second electrode 11 b are exposed from the light reflecting member 21 on the first surface 30 a (upper surface 30 a ) of the intermediate structure 30 .

Moreover, it is preferable to perform a cleaning process after the process of removing the substrate 100 . By performing the cleaning step, even if removal debris such as the substrate 100 adheres to the surface of the intermediate structure 30 and remains, the removal debris can be effectively removed. The cleaning step is performed by blowing gas or liquid, blowing sublimating particles such as solid carbon dioxide, or immersing in liquid.

An example of manufacturing and preparing the intermediate structure 30 has been described above. As described above, the step of preparing the intermediate structural body 30 may be prepared by purchasing the intermediate structural body 30 shown in FIGS. 10A and 10B, for example.

(Step of forming grooves 105a and 105b)
Next, preferably, as shown in FIGS. 11A and 11B, grooves 105a reaching two first electrodes 11a adjacent in the X direction are formed in the first surface 30a (upper surface 30a) of the intermediate structure 30. At the same time, grooves 105b reaching two second electrodes 11b adjacent in the X direction are formed. The groove 105a extends in the X direction from one to the other of the two first electrodes 11a adjacent in the X direction. That is, the groove 105a is formed between the first electrode 11a of the first laminate 20A and the first electrode 11a of the second laminate 20B. The groove 105b extends in the X direction from one to the other of the two second electrodes 11b adjacent in the X direction. That is, the groove 105b is formed between the second electrode 11b of the first laminate 20A and the second electrode 11b of the second laminate 20B. Note that the number of grooves 105a and grooves 105b formed between the electrodes may be one, or plural. The depth of the grooves 105a and 105b is, for example, a depth that does not reach the semiconductor laminate 12, and is, for example, 5 μm or more and 30 μm or less, preferably 10 μm or more and 20 μm or less. The width of the grooves 105a and 105b, that is, the length in the Y direction, is smaller than the width of the first electrode 11a and the second electrode 11b, and is, for example, 10 μm or more and 200 μm or less, preferably 20 μm or more and 100 μm or less. The shape of the grooves 105a and 105b in the YZ cross section is, for example, semicircular.

As a method for forming the grooves 105a and 105b, known methods such as laser light irradiation, etching, and blasting can be used. As a method for forming the grooves 105a and 105b, laser light irradiation is preferably used. Only a part of the light reflecting member can be removed by irradiating with laser light without using a mask or the like. When laser light irradiation is used as a method for partially removing the light reflecting member, the wavelength of the laser light is selected to have a low reflectance with respect to the light reflecting member, for example, a wavelength with a reflectance of 90% or less. is preferred. Examples of laser light are _CO2 lasers, Nd:YAG lasers, Nd: _YVO4 lasers, and the like. Alternatively, it is also possible to use laser light called a green laser that outputs a laser having a wavelength of 532 nm.

(Step of forming first conductive members 25c and 25d)
Next, as shown in FIGS. 12A and 12B, on the first surface 30a (upper surface 30a) of the intermediate structural body 30, between two first electrodes 11a and two second electrodes 11b adjacent in the X direction, A pair of first conductive members 25c and 25d are formed. The first conductive member 25c is formed between the first electrode 11a of the first laminate 20A and the first electrode 11a of the second laminate 20B. Also, the first conductive member 25d is formed between the second electrode 11b of the first laminate 20A and the second electrode 11b of the second laminate 20B. Where intermediate structure 30 includes grooves 105a and 105b, first conductive member 25c is positioned within groove 105a and first conductive member 25d is positioned within groove 105b. The pair of first conductive members 25c and 25d are formed, for example, on the upper surface 30a by using a known method such as sputtering, vapor deposition, coating, stamping, or plating using a conductive material.

(Step of forming cut surface 106)
Next, as shown in FIGS. 13A and 13B, cut surfaces 106 are formed by cutting the light reflecting member 21 and the pair of first conductive members 25c and 25d positioned between the laminates 20. As shown in FIGS. In the method for manufacturing the light emitting device 1 according to the first embodiment, the step of forming the cut surface 106 is performed by the step of singulating the intermediate structure 30 . In other words, the cut surfaces 106 are formed by singulating the intermediate structure 30 into individual laminates 20 . At the cut surface 106, the light reflecting member 21 and the first conductive members 25c and 25d are exposed. The first conductive member 25c cut in two becomes the first conductive layer 25a, and the first conductive member 25d cut in two becomes the first conductive layer 25b. As a method for separating the intermediate structure 30 into individual pieces, for example, the intermediate structure 30 is cut by dicing while applying a fluid such as water to the cut surface of the intermediate structure 30 . As a result, deformation of the light reflecting member 21 and the like due to heat generated by cutting can be suppressed. As a cutting method, a known cutting method such as dicing including a dry cutting method or a laser can be used.

In the step of singulating the intermediate structure 30 , it may be singulated so as to include only one layered body 20 or may be singulated so as to include a plurality of layered bodies 20 . For example, the intermediate structural body 30 can be singulated with a plurality of laminated bodies 20 arranged in one direction. As a result, various light-emitting devices can be manufactured according to their uses.

(Step of Forming Second Conductive Members 26a and 26b)
Next, as shown in FIGS. 14A and 14B, on the cut surface 106, the first conductive member 25c (first conductive layer 25a) and the first conductive member 25d (first conductive layer 25b) are connected to each other. , second conductive members 26a and 26b are formed. 14A and 14B, the second conductive member 26a is formed to connect with the first conductive member 25c at the first surface 30a (upper surface 30a) and the cut surface 106. In FIGS. Further, the second conductive member 26b is formed so as to be connected to the first conductive member 25d at the first surface 30a (upper surface 30a) and the cut surface 106. As shown in FIG. The second conductive members 26a and 26b may be formed so as to be connected to the first conductive members 25c and 25d only at the cut surface 106. FIG.

The second conductive members 26a and 26b can be formed, for example, by stamping a conductive material on the first surface 30a (upper surface 30a) of the intermediate structure 30 from above the first surface 30a as shown in FIG. 14A. can. Specifically, the conductive material is stamped across both the first conductive layer 25a of the first stacked body 20A and the first conductive layer 25a of the second stacked body 20B. Thereby, the conductive material flows into each cut surface 106, and the second conductive member 26a on the side of the first laminate 20A and the second conductive member 26a on the side of the second laminate 20B can be continuously formed. The second conductive member 26a on the side of the first laminate 20A and the second conductive member 26a on the side of the second laminate 20B are separated from each other in a later singulation step. The second conductive member 26b can also be formed in the same manner as the second conductive member 26a. Note that the second conductive members 26 a and 26 b may be formed for each laminate 20 . The second conductive member 26a and the second conductive member 26b are separated from each other. The second conductive members 26a and 26b become second conductive layers 26a and 26b, respectively.

Also, the second conductive members 26a and 26b can be formed by applying a conductive material from a nozzle using a coating device. Specifically, the conductive material is applied so as to straddle both the first conductive layer 25a of the first stacked body 20A and the first conductive layer 25a of the second stacked body 20B, so that the conductive material is applied to each cut surface 106. It is possible to simultaneously form the second conductive member 26a on the side of the first laminate 20A and the second conductive member 26a on the side of the second laminate 20B. In this case, the nozzle is sufficiently spaced from the intermediate structure 30 in the Z direction for application, or the application is performed while moving in the X direction. Thereby, the second conductive member 26a is formed so as to be in contact with the first conductive layer 25a, and the second conductive member 26b is formed so as to be in contact with the first conductive layer 25b.

In this manner, a plurality of light emitting devices 1 shown in FIGS. 1 and 2A to 2C are manufactured. The light emitting device 1 can be handled individually by peeling off the adhesive sheet 121 or by removing the adhesive sheet 121 . The step of forming the second conductive members 26a and 26b may be performed separately after the adhesive sheet 121 is removed.

Specific examples of the method for manufacturing the light emitting device 1 according to the present embodiment and the components included in the light emitting device 1 and the light source device 50 will be described below.

(Light emitting element 10)
The light emitting element 10 is, for example, an LED chip. The light-emitting element 10 has a semiconductor multilayer structure including, for example, a nitride semiconductor (In _x Al _y Ga _1-x-y N, 0≦x, 0≦y, x+y≦1) capable of emitting light in the ultraviolet to visible range. can have The emission peak wavelength of the light emitting element 10 is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and 450 nm or more and 475 nm or less, in consideration of the luminous efficiency of the light emitting device 1, the excitation spectrum of the phosphor, the color mixing property, and the like. More preferred.

The number of light emitting elements 10 included in the light emitting device 1 may be one, or two or more. When the light-emitting device 1 includes a plurality of light-emitting elements 10, the plurality of light-emitting elements are, for example, a plurality of blue light-emitting elements that emit blue light, three light-emitting elements that emit blue light, green light, and red light, respectively; Alternatively, a combination of a light-emitting element that emits blue light and a light-emitting element that emits green light can be used. When the light-emitting device 1 is used as a light source for a liquid crystal display device or the like, the light-emitting elements include one light-emitting element that emits blue light, two light-emitting elements that emit blue light, three or more light-emitting elements that emit blue light, Alternatively, it is preferable to use a combination of a light-emitting element that emits blue light and a light-emitting element that emits green light. A light-emitting element that emits blue light and a light-emitting element that emits green light preferably have a half-value width of 40 nm or less, and more preferably have a half-value width of 30 nm or less. This allows blue light and green light to easily have sharp peaks. As a result, for example, when the light-emitting device is used as a light source for a liquid crystal display device, the liquid crystal display device can achieve high color reproducibility. Also, the plurality of light emitting elements can be electrically connected in series, in parallel, or in a connection method combining series and parallel.

The planar shape of the light emitting element 10 is not particularly limited, but may be a square shape or a rectangular shape elongated in one direction. Moreover, the planar shape of the light emitting element 10 may be a hexagonal shape or other polygonal shapes. The light emitting element 10 has a pair of positive and negative electrodes. The positive and negative electrodes can be composed of gold, silver, copper, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or alloys thereof. The side surface of the light emitting element 10 may be perpendicular to the top surface of the light emitting element 10, or may be inclined inward or outward.

(translucent member 14)
The translucent member 14 is provided on the light emitting element 10 to protect the light emitting element 10 . The translucent member 14 may be a single layer or multiple layers. When the translucent member 14 has a plurality of layers, the base material of each layer may be the same or different.

As the base material of the translucent member 14, a material having translucency to the light emitted from the light emitting element 10 is used. In this specification, having translucency means that the light transmittance at the emission peak wavelength of the light emitting element 10 is 60% or more, preferably 70% or more, and more preferably 80% or more. . For the base material of the translucent member 14, for example, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resin thereof can be used. In particular, silicone resins and epoxy resins are preferably used because of their excellent heat resistance and light resistance. Examples of silicone resins include dimethylsilicone resin, phenyl-methylsilicone resin, and diphenylsilicone resin. In addition, the modified resin in this specification includes a hybrid resin. Also, the base material of the translucent member 14 may be glass.

The translucent member 14 may contain light diffusing particles. Light diffusing particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, and the like. The light diffusing particles can be used singly or in combination of two or more of them. In particular, it is preferable to use silicon oxide, which has a small linear expansion coefficient, as the light diffusing particles. Moreover, it is preferable to use nanoparticles as the light diffusing particles. As a result, scattering of light emitted by the light emitting element is increased, and the amount of phosphor used can be reduced. Note that nanoparticles refer to particles with a particle size of 1 nm or more and 100 nm or less. Moreover, the particle size in this specification is mainly defined by D50.

The translucent member 14 may contain phosphor. The phosphor is a member that absorbs at least part of the primary light emitted by the light emitting element 10 and emits secondary light with a wavelength different from that of the primary light. As the phosphor, one of the phosphors shown below can be used alone, or two or more of them can be used in combination. Also, the translucent member 14 may be a sintered body of a phosphor and an inorganic material such as alumina, or a plate crystal of the phosphor.

Examples of phosphors include yttrium-aluminum-garnet-based phosphors (eg, Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), lutetium-aluminum-garnet-based phosphors (eg, Lu ₃ (Al, Ga) ₅ O ₁₂ : Ce), terbium-aluminum-garnet-based phosphors (e.g., _Tb3 (Al, Ga) _5O12 :Ce), silicate-based _{phosphors (e.g., (Ba, Sr)2SiO4 :} Eu), chlorosilicate-based phosphors (e.g. Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu), β-sialon phosphors (e.g. Si _6-z Al _z O _z N _8-z :Eu (0<z<4.2)), SGS-based Phosphors (eg SrGa ₂ S ₄ :Eu), alkaline earth aluminate phosphors (eg (Ba,Sr,Ca)Mg _x Al ₁₀ O _17-x :Eu,Mn), α-sialon phosphors (eg M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0<z≦2, and M is a lanthanide element excluding Li, Mg, Ca, Y, and La and Ce)), nitrogen-containing aluminosilicate calcium-based phosphors (for example, (Sr, Ca)AlSiN ₃ :Eu), manganese-activated fluoride-based phosphors (phosphors represented by the general formula (I) A ₂ [M _1-a Mna _{F 6} ] (where , in the above general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs and _NH4 , and M is composed of Group 4 elements and Group 14 elements is at least one element selected from the group, and a satisfies 0<a<0.2)); In the yttrium-aluminum-garnet-based phosphor, by substituting part of Y with Gd, the emission peak wavelength can be shifted to the longer wavelength side. A representative example of the manganese-activated fluoride-based phosphor is a manganese-activated potassium fluorosilicate phosphor (for example, K ₂ SiF ₆ :Mn).

The translucent member 14 can include phosphor layers 15a and/or 15b containing phosphor and a translucent layer 16 that does not substantially contain phosphor. By providing the light-transmitting layer 16 on the upper surface of the phosphor layer 15b, the light-transmitting layer 16 functions as a protective layer, and deterioration of the phosphor in the phosphor layer 15b can be suppressed.

(Light reflecting member 21)
From the viewpoint of the light extraction efficiency in the upper surface direction of the light emitting device 1, the light reflecting member 21 preferably has a light reflectance of 70% or more, more preferably 80% or more, at the emission peak wavelength of the light emitting element 10. More preferably, it is 90% or more. Furthermore, the light reflecting member 21 is preferably white. The light-reflecting member 21 can contain a light-reflecting substance in a resin material serving as a base material. The light reflecting member 21 can be obtained by solidifying a liquid resin material.

The light reflecting member 21 can contain a resin material as a base material. A thermosetting resin, a thermoplastic resin, or the like can be used as the resin material that serves as the base material. Specifically, epoxy resin, silicone resin, modified epoxy resin such as silicone-modified epoxy resin, modified silicone resin such as epoxy-modified silicone resin, modified silicone resin, unsaturated polyester resin, saturated polyester resin, polyimide resin, modified polyimide resin , polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, and the like. In particular, as the resin material of the light reflecting member 21, it is preferable to use a thermosetting resin such as an epoxy resin or a silicone resin that is excellent in heat resistance and light resistance.

In the light reflecting member 21, it is preferable that the resin material, which is the base material, contains a light reflecting substance. As the light-reflecting substance, it is preferable to use a member that hardly absorbs the light from the light-emitting element 10 and that has a large difference in refractive index with respect to the resin material that is the base material. Such light-reflecting substances are, for example, titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride and the like.

(Adhesive layer 13a, light guide member 13)
The light guide member 13 covers the side surface of the light emitting element 10 and guides the light emitted from the side surface of the light emitting element 10 toward the upper surface of the light emitting device 1, that is, toward the third surface 40c. As materials for the adhesive layer 13a and the light guide member 13, the resin materials exemplified for the light reflecting member 21 can be used. In particular, it is preferable to use thermosetting translucent resin such as silicone resin, silicone-modified resin, epoxy resin, and phenol resin for the adhesive layer 13a and the light guide member 13 . The adhesive layer 13a and the light guide member 13 preferably have high light transmittance. Therefore, it is usually preferable that the adhesive layer 13a and the light guide member 13 do not substantially contain additives that reflect, absorb, or scatter light. The adhesive layer 13a and the light guide member 13 may contain light diffusing particles and/or phosphors similar to those of the translucent member 14 described above.

For the light reflecting member 21, the light guiding member 13, and the translucent member 14, an epoxy resin can be selected as a base resin material. The strength of the light-emitting device 1 can be improved by selecting an epoxy resin that is stronger than the silicone resin when solidified. Further, by forming the base material of each member from the same kind of resin material, it is possible to improve the adhesion strength of each member. Further, when epoxy resin is selected as the adhesive member, the bonding strength between the adhesive member and the light reflecting member 21 or the like can be improved.

(Mounting board 51)
The mounting substrate 51 has a plate-like base material made of glass epoxy resin, ceramic, polyimide, or the like. Moreover, the mounting substrate 51 has land portions and wiring patterns made of copper, gold, silver, nickel, palladium, tungsten, chromium, titanium, or alloys thereof on the base material. The land portion and the wiring pattern are formed using methods such as plating, lamination press-bonding, pasting, sputtering, vapor deposition, and etching.

(Joining members 52a and 52b)
The joining members 52a and 52b can use any material known in the art. Specifically, the bonding members 52a and 52b are made of, for example, tin-bismuth-based, tin-copper-based, tin-silver-based, gold-tin-based solder (specifically, mainly Ag, Cu, and Sn). alloys containing Cu and Sn as main components, alloys containing Bi and Sn as main components, etc.), eutectic alloys (alloys containing Au and Sn as main components, Au and Si as main components, etc.) conductive pastes such as silver, gold, and palladium, bumps, anisotropic conductive materials, brazing materials such as low-melting metals, and the like.

(Adhesive member 53)
When the adhesive member 53 is provided, the adhesive member 53 can be formed of, for example, a resin material such as an epoxy resin listed for the translucent member 14 or a material listed for the bonding members 52a and 52b. The joining members 52a and 52b and the bonding member 53 may be made of the same material or may be made of different materials. When the bonding members 52a and 52b and the bonding member 53 are formed from different materials, the bonding members 52a and 52b can be formed from solder, which is a conductive material, and the bonding member 53 can be formed from a resin material such as epoxy resin. can.

Next, the effects of this embodiment will be described.
In this embodiment, a pair of first conductive members 25c and 25d are formed on the upper surface 30a of the intermediate structure 30 in the steps shown in FIGS. 12A and 12B. The first conductive members 25c and 25d are connected to the first electrode 11a and the second electrode 11b, respectively, and extend in the X direction. 13A and 13B, a cut surface 106 is formed by cutting the light reflecting member 21 and the pair of first conductive members 25c and 25d. As a result, the first conductive members 25c and 25d are divided into the first conductive layers 25a and 25b, respectively. 14A and 14B, a pair of second conductive layers 26a and 26b are formed on the cut surface 106 so as to be connected to the pair of first conductive layers 25a and 25b. As a result, a pair of second conductive layers 26a and 26b can be provided on the second surface 40b of the structure 40 adjacent to the first surface 40a.

The second conductive layers 26 a and 26 b function as main external electrodes of the light emitting device 1 . As shown in FIGS. 3A and 3B, by connecting the second conductive layers 26a and 26b to the mounting board 51 through the bonding members 52a and 52b, the side emission type light emitting device 1 can be realized. Since only the first conductive layers 25a and 25b and the second conductive layers 26a and 26b are provided on the first surface 40a side of the structure 40, the size of the light emitting device 1 can be reduced.

11A and 11B, a pair of grooves 105a and 105b are formed in the upper surface 30a of the intermediate structural body 30, and a pair of first grooves 105a and 105b are formed in the steps shown in FIGS. Conductive members 25c and 25d are placed in a pair of grooves 105a and 105b, respectively. Thereby, the positions of the first conductive members 25c and 25d can be accurately determined. As a result, for example, short-circuiting between the first conductive layers 25a and 25b can be prevented. In addition, the height of the protrusion of the first conductive layers 25a and 25b from the first surface 40a of the structure 40 can be reduced, and the light emitting device 1 can be further miniaturized.

Furthermore, in the present embodiment, the cut surface 106 is formed by singulating the intermediate structure 30 in the steps shown in FIGS. 13A and 13B. Therefore, a special process for forming the cut surface 106 is not required. As a result, the manufacturing process of the light emitting device 1 can be simplified, and the manufacturing cost can be reduced.

<Second embodiment>
Next, a second embodiment will be described.
FIG. 15 is an end view showing the light emitting device 2 according to this embodiment.

(Light emitting device 2)
As shown in FIG. 15, the light emitting device 2 according to this embodiment has a projecting portion 21t partially projecting to the light reflecting member 21 on the second surface (mounting surface) 40b of the structure 40. As shown in FIG. The protruding portion 21t protrudes away from the laminate 20 in a region of the second surface (mounting surface) 40b of the structure 40 on the side of the third surface (light emitting surface) 40c. End portions 26t of the second conductive layers 26a and 26b are arranged on the side surfaces of the projecting portion 21t. The end 26t is located on the side opposite to the end on the first conductive layers 25a and 25b side.

Since the projecting portion 21t is positioned on the third surface (light emitting surface) 40c side of the second surface (mounting surface) 40b, the light emitting device 2 is positioned on the first surface 40a side (back side) of the second surface (mounting surface) 40b. ) has a recess 41 . A bonding member enters into the concave portion 41 when the light emitting device 2 is arranged on the mounting substrate. Since the light emitting device 2 has the concave portion 41, the area in contact with the bonding member is increased compared to the case where the second surface (mounting surface) 40b is a flat surface. As a result, the bonding strength between the light emitting device 2 and the mounting substrate can be improved. In addition, since the projecting portion 21t is positioned on the third surface 40c (light emitting surface) side of the second surface (mounting surface) 40b, it is possible to suppress the joining member from flowing toward the third surface 40c side. As a result, it is possible to reduce the possibility that the light emitted from the light emitting device 2 is blocked by the bonding member.

Next, a method for manufacturing the light emitting device according to this embodiment will be described.
16A to 18B are diagrams showing the manufacturing method of the light emitting device according to this embodiment. 16A-18A are plan views, and FIGS. 16B-18B are end views corresponding to each plan view. FIG. 16B is an end view along line HH' shown in FIG. 16A, showing the same process as in FIG. 16A. The same applies to FIGS. 17B and 18B.

First, the steps shown in FIGS. 4A to 12B are performed. The detailed contents of these steps are the same as in the first embodiment.

(Step of forming cut surface 116)
Next, as shown in FIGS. 16A and 16B, holes 115 are formed in the upper surface 30a of the intermediate structure 30. Next, as shown in FIGS. The hole 115 is formed in a portion of the intermediate structural body 30 between the stacked bodies 20 adjacent in the X direction and at a position dividing the first conductive members 25c and 25d. By forming the hole 115, the first conductive member 25c is divided into two first conductive layers 25a and the first conductive member 25d is divided into two first conductive layers 25b. A side surface of the hole 115 becomes a cut surface 116 of the intermediate structure 30 .

The width of the hole 115, that is, the length in the X direction is, for example, 0.2 times or more and 1.0 times or less, preferably 0.5 times or more, the separation distance between the stacked bodies 20 adjacent in the X direction. 0.8 times or less. The depth of the hole 115 is greater than or equal to the thickness of the first conductive members 25c and 25d. The depth of the hole 115 is, for example, 40 times or more the thickness of the first conductive members 25c and 25d, and 0.5 times or less the thickness of the intermediate structure 30, that is, the length in the Z direction. More preferably, the depth of the hole 115 is 20 times or more the thickness of the first conductive members 25c and 25d and 0.8 times or less the thickness of the intermediate structure 30. FIG. In the example shown in FIGS. 16A and 16B, the hole 115 does not pass through the intermediate structure 30 in the Z direction, but it may pass through.

(Step of Forming Second Conductive Members 26c and 26d)
Next, as shown in FIGS. 17A and 17B, second conductive members 26c and 26d are formed from the upper surface 30a of the intermediate structure 30 to the cut surface 116. Next, as shown in FIGS. Specifically, a conductive material having fluidity such as liquid, paste, or powder is formed using a known method such as sputtering, vapor deposition, coating, stamping, or plating.

The second conductive member 26c contacts the first conductive layer 25a and the first electrode 11a, and the second conductive member 26d contacts the first conductive layer 25b and the second electrode 11b. The second conductive member 26c and the second conductive member 26d are separated from each other. The second conductive member 26c may be separated from the first electrode 11a, and the second conductive member 26d may be separated from the second electrode 11b.

(Step of Individualizing Intermediate Structural Body 30)
Next, as shown in FIGS. 18A and 18B, the intermediate structure 30 is singulated by cutting the light reflecting member 21 and the second conductive members 26c and 26d so as to divide the hole 115. As shown in FIG. Specifically, grooves 117 extending in the X and Y directions and penetrating the intermediate structure 30 in the Z direction are formed. The width of the groove 117 (the length of the groove 117 in the X direction) is set within a range in which the second conductive members 26c and 26d are not removed. For example, when the width of the groove 117 is _W117 , the width of the hole 115 is _W115 , and the thickness of the second conductive members 26c and 26d is _t26 , the width _W117 is set so as to satisfy the following equation. .

W ₁₁₇ ≦W ₁₁₅ −2×t ₂₆

Thereby, the second conductive members 26 c and 26 d can be left on the cut surface 116 . The remaining portions of the second conductive members 26c and 26d become the second conductive layers 26a and 26b. Thus, the light emitting device 2 shown in FIG. 15 is manufactured. A portion of the light reflecting member 21 that is not divided by the hole 115 but is divided by the groove 117 serves as the projecting portion 21t.

In one example, the width W ₁₁₅ of the hole 115 is between 20 μm and 200 μm, preferably between 50 μm and 100 μm. The thickness _t26 of the second conductive members 26c and 26d is 1 μm or more and 10 μm or less, preferably 3 μm or more and 7 μm or less. The width W ₁₁₇ of the groove 117 is 15 μm or more and 100 μm or less, preferably 30 μm or more and 70 μm or less. Therefore, the height of the projecting portion 21t is 1 μm or more and 20 μm or less, preferably 5 μm or more and 10 μm or less.

According to the present embodiment, by providing the projecting portion 21t on the light reflecting member 21, when the light emitting device 2 is mounted on the mounting board 51, the second surface 40b of the structure 40 and the mounting surface 51a of the mounting board 51 are separated from each other. A space in which at least a portion of the joining members 52a and 52b is accommodated can be formed between them. This stabilizes the position of the light emitting device 2 with respect to the mounting board 51 . The configuration, manufacturing method, and effects of this embodiment other than those described above are the same as those of the above-described first embodiment.

<Third Embodiment>
Next, a third embodiment will be described.
FIG. 19 is an end view showing the light emitting device 3 according to this embodiment.

(Light emitting device 3)
As shown in FIG. 19, in the light emitting device 3 according to this embodiment, the grooves 105a and 105b are not formed in the first surface 40a of the structural body 40, and the first conductive layers 25a and 25b are formed on the first surface 40a. protruding from Such a light emitting device 3 can be manufactured by omitting the steps shown in FIGS. 11A and 11B in the manufacturing method of the light emitting device according to the first embodiment. According to this embodiment, the manufacturing process can be simplified as compared with the first embodiment. The configuration, manufacturing method, and effects of this embodiment other than those described above are the same as those of the above-described first embodiment.

INDUSTRIAL APPLICABILITY The present invention can be used, for example, as a light source for a display device.

1, 2, 3: Light emitting device 10: Light emitting element 11a, 11b: Electrode 12: Semiconductor laminate 13: Light guide member 13a: Adhesive layer 14: Translucent member 15a, 15b: Phosphor layer 16: Translucent layer 20, 20A, 20B: Laminated body 21: Light reflecting member 21t: Protruding portion 25a, 25b: First conductive layer 25c, 25d: First conductive member 26a, 26b: Second conductive layer 26c, 26d: Second conductive member 26t : Edge 30: Intermediate structure 30a: Upper surface 40: Structure 40a: First surface 40b: Second surface 40c: Third surface 40d: Fourth surface 40e: Fifth surface 40f: Sixth surface 41: Concave portion 50: Light source device 51: Mounting substrate 51a: Mounting surface 52a, 52b: Joining member 53: Adhesive member 100: Substrate 100a: Upper surface 101a, 101b: Metal layer 101c: Projection 102: Alignment mark 103: Joining member 105a, 105b: Groove 106 : Cut surface 115: Hole 116: Cut surface 117: Groove 121: Adhesive sheet 122: Carrier L: Light

Claims (7)

a light reflecting member, a first layered body embedded in the light reflecting member , and a second layered body embedded in the light reflecting member , wherein the first layered body and the second layered body extend in a first direction; In the arranged intermediate structure, the first laminate and the second laminate respectively include a light-emitting element and a translucent member, and the light-emitting element extends in a second direction perpendicular to the first direction. and a semiconductor stack connected to the first electrode and the second electrode and stacked in a third direction orthogonal to both the first direction and the second direction. and the translucent member and the semiconductor laminate are arranged in the third direction , and are positioned in the third direction with respect to the first electrode and the second electrode. preparing an intermediate structure having a first surface where a second electrode is exposed from the light reflecting member;
On the first surface, between the first electrode of the first laminate and the first electrode of the second laminate, and between the second electrode of the first laminate and the second electrode of the second laminate forming a pair of first conductive members connecting between
a step of forming cut surfaces by cutting the light reflecting member and the pair of first conductive members positioned between the first laminate and the second laminate;
forming a pair of second conductive members on the cut surface so as to be connected to the pair of first conductive members, respectively;
A method for manufacturing a light-emitting device comprising Between the first electrode of the first laminate and the first electrode of the second laminate, and between the second electrode of the first laminate and the second laminate, on the first surface of the intermediate structure. further comprising forming a pair of grooves between the body and the second electrode;
2. The method of manufacturing a light-emitting device according to claim 1, wherein the pair of first conductive members are arranged in the pair of grooves. 3. The method of manufacturing a light emitting device according to claim 1, wherein the pair of first conductive members is a conductive paste, and the step of forming the pair of first conductive members is a step of applying the conductive paste. 4. The method of manufacturing a light-emitting device according to claim 1, wherein the step of forming the pair of second conductive members includes stamping a conductive material onto the cut surface. 4. The method of manufacturing a light emitting device according to claim 1, wherein the step of forming the pair of second conductive members includes applying a conductive material to the cut surface using a nozzle. 6. The method of manufacturing a light-emitting device according to claim 1, wherein the step of forming the cut surface is a step of singulating the intermediate structure. The step of forming the cut surface is a step of forming a hole in the light reflecting member positioned between the first laminate and the second laminate,
6. The method according to any one of claims 1 to 5, further comprising, after the step of forming the pair of second conductive members, the step of separating the intermediate structure into individual pieces by cutting the holes so as to separate them. 3. A method for manufacturing the light emitting device according to 1.

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