JP7247142B2 - Vapor deposition device and evaporation source - Google Patents

Description

The present invention relates to a vapor deposition apparatus and an evaporation source.

In Japanese Patent Application No. 2014-265981 pertaining to the prior application of the present applicant, among a plurality of evaporation outlets provided in the evaporation source, the opening end face of the evaporation outlet positioned on the outside is By slanting it so as to face , it is possible to obtain an evaporated film having a uniform film thickness distribution and suppressing film blurring in the formed pattern without arranging the evaporation port so as to extend outward in the longitudinal direction. We are proposing a vacuum deposition apparatus that

By the way, when the evaporation ports are close to each other, as shown in FIGS. 1 and 2, the material scattering regions of the adjacent evaporation ports overlap to form a high-density space of the evaporation particles, and the evaporation particles collide. Scattering may occur, in which case an error will occur in the film thickness distribution. FIG. 1 shows an example of an evaporation port (vertical nozzle) that stands vertically, and FIG. 2 shows an example of an evaporation port that is inclined inward (inwardly inclined nozzle).

Also, if the adjacent evaporation ports are inclined outward in the longitudinal direction of the evaporation source (outwardly inclined nozzles) as in the above prior application, the opening end surface of the inner evaporation port may Evaporated particles may reach the outer evaporation port and be re-evaporated. Also in this case, an error occurs in the film thickness distribution.

The present invention has been made in view of the above-mentioned current situation, and by separating the distance between the evaporation ports as much as possible, the mutual influence between the evaporation ports is suppressed and an error occurs in the film thickness distribution. To provide a vapor deposition apparatus and an evaporation source capable of preventing

In order to solve the above-mentioned problems, the present invention provides an evaporation source containing a film-forming material, and a substrate disposed at a position facing the evaporation source and the evaporation source, which intersects the longitudinal direction of the evaporation source. and a relative movement mechanism for relatively moving in an intersecting direction, wherein a deposition material is discharged from the evaporation source to form a deposited film on the substrate, wherein the evaporation source includes a first row of evaporation ports including a plurality of evaporation ports aligned along the longitudinal direction; and a second row of evaporation ports including a plurality of evaporation ports aligned along the longitudinal direction; The evaporation port row and the second evaporation port row are arranged side by side in the intersecting direction, and a line passing through the opening center of the evaporation port included in the first evaporation port row and along the intersecting direction is the opening center of the evaporation port included in the second evaporation port row
The evaporation ports included in the first evaporation port row and the evaporation ports included in the second evaporation port row are arranged so that none of the , in the intersecting direction, inclined toward the second evaporation port row, and the evaporation ports included in the second evaporation port row are inclined in the intersecting direction toward the first evaporation port row; It is characterized by

Since the present invention is configured as described above, the vapor deposition apparatus is capable of suppressing the mutual influence between the evaporation ports and preventing the occurrence of errors in the film thickness distribution by separating the evaporation ports as much as possible. and evaporation source.

It is a schematic explanatory drawing explaining overlap of the material scattering area|region of perpendicular|vertical nozzles. It is a schematic explanatory drawing explaining overlap of the material scattering area|region of inward inclination nozzles. It is a schematic explanatory plan view of a present Example. FIG. 2(a) is a schematic explanatory side view and (b) is a cross-sectional view taken along the line AA of this embodiment. FIG. 2(a) is a schematic explanatory side view and (b) is a BB cross-sectional view of the present embodiment. FIG. 10 is a schematic explanatory plan view of a conventional example; (a) Schematic explanatory side view and (b) CC cross-sectional view of a conventional example. FIG. 10 is a schematic explanatory plan view of a conventional example; It is explanatory drawing explaining the effect of a present Example. FIG. 5 is a schematic explanatory plan view for explaining an arrangement example of evaporation ports; It is a schematic explanatory front view explaining the example of arrangement|positioning of an outward inclination nozzle. FIG. 4 is a schematic explanatory front view for explaining an arrangement example of vertical nozzles; FIG. 4 is a schematic explanatory front view for explaining an arrangement example of inwardly inclined nozzles; FIG. 5 is a schematic explanatory plan view for explaining an arrangement example of evaporation ports; FIG. 5 is a schematic explanatory plan view for explaining an arrangement example of evaporation ports; It is (a) schematic description side view of another example 1, (b) schematic description top view. (a) A schematic explanatory side view and (b) a schematic explanatory plan view of another example 2. FIG. It is a schematic explanatory front view of a vapor deposition apparatus. It is a schematic explanatory side view of a vapor deposition apparatus. It is a schematic explanatory sectional drawing explaining one structural example of an evaporation source.

A preferred embodiment of the present invention will be briefly described with reference to the drawings showing the operation of the present invention.

By providing a plurality of rows of the evaporation ports 2 , it is possible to widen the distance between the evaporation ports 2 in the longitudinal direction of the container 1 compared to the case where the same number of the evaporation ports 2 are provided in a row.

In addition, by not allowing the center of the opening of another evaporation port 2 to overlap with the line along the direction of relative movement with respect to the substrate, it is possible to provide a configuration in which the evaporation port 2 does not exist in the direction of relative movement. It is possible to achieve a configuration in which mutual influence is less likely to occur even in the direction of relative movement.

A specific embodiment of the present invention will be described with reference to the drawings.

This embodiment is an example in which the present invention is applied to a vapor deposition apparatus as shown in FIGS. In this vapor deposition apparatus, an evaporation source 25 that emits a film-forming material is arranged at a position facing the substrate 21 in order to form a thin film on the substrate 21 in a vacuum chamber 20 that maintains a reduced-pressure atmosphere. A film thickness monitor 22 for monitoring the evaporation rate of the emitted evaporated particles, a film thickness meter 23 provided outside the vacuum chamber 20 for converting the amount of the monitored evaporated particles into a film thickness, and the converted film thickness is a desired value. A heater power supply 24 for heating an evaporation source 25 is provided in order to control the evaporation rate of the film forming material so as to obtain a film thickness. In addition, a relative movement mechanism is provided to relatively move the substrate 21 and the evaporation source 25, and by performing film formation while relatively moving, an evaporated film having a uniform thickness is formed over the entire surface of the substrate. be able to.

In this embodiment, an evaporation source 25 is employed which consists of a container 1 in which the film-forming material 3 is stored, and a plurality of rows of evaporation ports 2 provided in the container 1 along the longitudinal direction of the container 1 . The evaporation source 25 and the substrate disposed at a position facing the evaporation source 25 move relative to each other in a direction orthogonal to the longitudinal direction of the evaporation source 25, so that the deposition material is removed from the evaporation port 2. is emitted to form a deposited film on the substrate.

In this embodiment, as shown in FIGS. 4 and 5, the lower portion of the container 1 is the material storage portion 5 in which the film-forming material 3 is stored, and the upper portion is the diffusion portion 4 in which the vaporized film-forming material is diffused. However, like the evaporation source 25 shown in FIG. 5 and the diffusion part 4 may be combined to form a container 1 of a separate type. In this case, the width W2 of the material accommodating portion 5 can be made wider than the width W1 of the diffusion portion 4 to accommodate a larger amount of material, and the influence of the material accommodating portion 5 on the substrate temperature can be suppressed. It becomes the structure which can perform film-forming much more satisfactorily.

Also, in this embodiment, a plurality of evaporation ports 2 are arranged in two rows on the upper surface of the container 1 .

Moreover, at least one pair of evaporation port portions 2 is configured to have an opening end face inclined so as to face outward in the longitudinal direction of the container 1 . In this embodiment, the direction toward the longitudinal center of the container 1 is inside, and all the evaporation ports 2 are configured to have an opening end surface inclined so as to face outward in the longitudinal direction of the container 1 (outwardly inclined nozzle). there is

Each evaporation port 2 is arranged so that the center of the opening of another evaporation port 2 does not overlap with the line along the relative movement direction of the substrate passing through the center of the opening of this evaporation port 2 . That is, the evaporation port portions 2 are arranged so that the opening centers of the other evaporation port portions 2 do not overlap on a line passing through the opening center of the evaporation port portion 2 and perpendicular to the longitudinal direction of the container 1 . ing.

In this embodiment, the opening end faces of the other evaporation ports 2 are arranged so as not to overlap on a line passing through the center of the opening of the evaporation port 2 and along the relative movement direction of the substrate.

Specifically, as shown in FIGS. 3 to 5, the evaporation port 2 of the container 1 is provided such that the opening end faces of the evaporation port 2 are arranged in a zigzag pattern. FIG. 3 is a diagram schematically showing the arrangement of the opening end faces of the evaporation port 2. By arranging the opening end faces in a zigzag pattern, mutual influence can be minimized.

With the above configuration, a type in which the same number of evaporation port portions 2 are provided in one row as illustrated in FIGS. Compared to the side-by-side type, the distance between the evaporation ports 2 (open end surfaces) in the longitudinal direction of the container 1 can be widened, and the mutual influence of adjacent evaporation ports 2 can be suppressed. In FIGS. 6 to 8, portions corresponding to those of this embodiment are denoted by the same reference numerals.

In addition, it is possible to adopt a structure in which the evaporation port 2 does not exist in the direction of relative movement with respect to the substrate (vertical direction in FIG. 3) perpendicular to the longitudinal direction of the container 1, and a structure in which mutual influence is less likely to occur can be obtained. can.

Further, in the case of the outwardly inclined nozzle as in the present embodiment, the evaporated particles emitted from the opening end face of the inner evaporation port are reflected or re-evaporated by the outer evaporation port and reach the substrate, resulting in a film thickness distribution. There is concern that it will affect

In this regard, as illustrated in FIG. 9, the evaporation angle distribution (emission angle distribution) of the evaporation particles emitted from the tip of the evaporation port follows the cosine law (cos ⁿ θ) with the normal direction of the opening being 0°. . Here, when the inclination angle θ of the opening end face is 30° and the n value is 5, for example, the distance a to the corner A of the nozzle placed 20 mm away from the reference nozzle is 15.9 mm, and the distance a is 15.9 mm from the reference nozzle 40 mm. The distance b to the corner B of the installed nozzle is 38.2 mm, the angle α between the normal line from the opening end face and the straight line passing through the center of the opening end face and the corner A is 51°, and the normal line from the opening end face The angle β between the center of the opening end face and the straight line passing through the corner B is 56°. When the relative number of particles reaching point B is calculated from the formula in FIG. 9 using these values, the relative number of particles reaching point B is about 0.05 when point A is 1.

That is, as is clear from comparison between FIGS. 3 to 5 and FIGS. 6 and 7, when the same number of evaporation ports 2 are arranged in two rows instead of being arranged in one row, the longitudinal direction of the container 1 It is possible to double the distance between the evaporation outlets 2 in the nozzle. Furthermore, since the angle formed by the normal line from the opening end face can be made smaller, it is possible to greatly reduce the number of evaporated particles reaching the outer evaporation port 2 .

In this embodiment, the opening end surfaces of the evaporation port 2 do not overlap each other in the direction of relative movement with respect to the substrate. It is sufficient that the centers of the openings of the evaporation ports 2 are arranged so as not to overlap each other. For example, as shown in FIG. can also

Further, not only the outwardly inclined nozzle as shown in FIG. 11 as in this embodiment, but also the vertical nozzle as shown in FIG. 12 and the inwardly inclined nozzle as shown in FIG. By adopting a configuration in which the evaporators do not overlap each other, it is possible to reduce the mutual influence between adjacent evaporation outlets.

Further, in this embodiment, the opening end faces of the evaporation ports 2 are arranged in a zigzag pattern, but they may not be in a zigzag pattern as shown in FIG. Also, the number of rows of the evaporation ports 2 is not limited to two, and may be three or more as shown in FIG. In the case of three or more rows, as in the case of two rows, other arrangements such as a staggered pattern can be used.

In addition, the height of the evaporation port 2 is set higher toward the center side and lower toward the end portions so that the outer evaporation port 2 does not enter the range of emission of evaporation particles from the opening end face of the inner evaporation port 2. You can do it. In this case as well, it is possible to solve the problem that the evaporation particles emitted from the opening end face of the inner evaporation port are reflected by the outer evaporation port or are re-evaporated to reach the substrate and affect the film thickness distribution. can.

In addition, in the present embodiment, the arrangement of the evaporation ports 2 arranged in one container 1 is described. Evaporation ports 2 may be arranged between different containers 1 of a plurality of containers 1 used as a set of co-evaporation sources under the same conditions as in this embodiment.

FIG. 16 shows an example in which one container 1a and one container 1b containing a film-forming material different from the container 1a are provided, and FIG. This is an example in which one container 1c for accommodating is provided. As a set, they move relative to the substrate.

In Examples 1 and 2, each container 1a and 1b is provided with one row of evaporation port portions 2, and a line along the relative movement direction of the substrate passing through the opening center of each evaporation port portion 2 of the container 1a and the container 1b. , are arranged so that the centers of the openings of the evaporation ports 2 of the other containers 1a and 1b do not overlap. In Examples 1 and 2, the evaporation ports 2 of all the containers 1a, 1b, and 1c are arranged in a zigzag pattern as a whole.

Therefore, the mutual influence of the containers 1a, 1b, and 1c is reduced, and good co-evaporation can be performed.

That is, by arranging the evaporation ports 2 of the containers 1a, 1b, and 1c so that they do not completely overlap in the direction of relative movement, a space with a high density of evaporated particles is not formed, and the particles generated due to the increased pressure are not formed. collision scattering of is suppressed, and good co-evaporation becomes possible.

In FIG. 17, the evaporation ports 2 of the containers 1b and 1c are inclined toward the container 1a in the relative movement direction of the substrate so that the mixing ratio of the emitted evaporated particles is uniform.

The remainder is the same as in this embodiment.

It should be noted that the present invention is not limited to this embodiment, and the specific configuration of each component can be appropriately designed.

1 container 2 evaporation port

Claims (10)

an evaporation source containing a film-forming material;
a relative movement mechanism for relatively moving the evaporation source and a substrate disposed at a position facing the evaporation source in a cross direction crossing the longitudinal direction of the evaporation source ;
A vapor deposition apparatus for forming a vapor deposition film on the substrate by discharging a film forming material from the vapor source,
The evaporation source is provided with a first row of evaporation ports including a plurality of evaporation ports aligned along the longitudinal direction, and a second row of evaporation ports including a plurality of evaporation ports aligned along the longitudinal direction. be
The first evaporation port row and the second evaporation port row are arranged side by side in the cross direction,
A line passing through the opening centers of the evaporation ports included in the first evaporation port row and along the cross direction does not pass through the opening centers of the evaporation ports included in the second evaporation port row. , the evaporation ports included in the first evaporation port row and the evaporation ports included in the second evaporation port row are arranged,
the evaporation ports included in the first evaporation port row are inclined toward the second evaporation port row in the intersecting direction;
Evaporation ports included in the second evaporation port row are inclined toward the first evaporation port row in the intersecting direction.
A vapor deposition apparatus characterized by: In each of the first row of evaporation ports and the second row of evaporation ports, the outermost evaporation port is provided with an opening surface inclined outward in the longitudinal direction. The vapor deposition apparatus according to claim 1, characterized by: The evaporation source has a first container provided with the first row of evaporation ports and a second container provided with the second row of evaporation ports,
3. The vapor deposition apparatus according to claim 1, wherein said first container and said second container are arranged side by side in said intersecting direction. An evaporation source containing a film-forming material,
The evaporation source includes a first row of evaporation ports including a plurality of evaporation ports arranged along the longitudinal direction of the evaporation source , and a second row of evaporation ports including a plurality of evaporation ports arranged along the longitudinal direction. , is provided,
The first evaporation port row and the second evaporation port row are arranged side by side in a cross direction crossing the longitudinal direction,
A line passing through the opening centers of the evaporation ports included in the first evaporation port row and along the cross direction does not pass through the opening centers of the evaporation ports included in the second evaporation port row. , the evaporation ports included in the first evaporation port row and the evaporation ports included in the second evaporation port row are arranged,
the evaporation ports included in the first evaporation port row are inclined toward the second evaporation port row in the intersecting direction;
Evaporation ports included in the second evaporation port row are inclined toward the first evaporation port row in the intersecting direction.
An evaporation source characterized by: In each of the first row of evaporation ports and the second row of evaporation ports, the outermost evaporation port is provided with an opening surface inclined outward in the longitudinal direction. The evaporation source according to claim 4, characterized by: The evaporation source has a first container provided with the first row of evaporation ports and a second container provided with the second row of evaporation ports,
6. The evaporation source according to any one of claims 4 and 5, wherein the first container and the second container are arranged side by side in the intersecting direction. 4. The method according to any one of claims 1 to 3, wherein the evaporation ports of the first row of evaporation ports and the evaporation ports of the second row of evaporation ports emit materials different from each other. vapor deposition equipment. In each of the first and second rows of evaporation ports, the height of the evaporation ports is higher toward the center side and lower toward the end portions. The vapor deposition apparatus according to any one of . 7. The method according to any one of claims 4 to 6, wherein the evaporation ports of the first row of evaporation ports and the evaporation ports of the second row of evaporation ports emit materials different from each other. source of evaporation. In each of the first and second rows of evaporation ports, the height of the evaporation ports is higher toward the center side and lower toward the end portions. Evaporation source according to any one of the above.

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