JP7262782B2 - Structural analysis equipment - Google Patents

Description

The present invention provides a structure analysis apparatus, a structure analysis method, and a structure analysis method for non-destructively analyzing the internal structure of a measurement sample such as an electronic component, a semiconductor element, a thin film device, a thick film device, an electronic device, etc., mainly using ultrasonic waves or the like. , relates to a computer program for analyzing and displaying its structure.

The quality requirements for electronic parts, semiconductor elements, and the like are extremely high. As products become smaller and more functional, the structure of products becomes more complicated. The processes and factors that lead to failure are also becoming more complex. In accordance with technological developments, improvements are also required for structural analysis techniques.

In the market, it is possible to obtain as much data as possible by manufacturing electronic components at low cost and conducting non-destructive inspections to obtain as much data as possible, such as the internal state of electronic components that cannot be seen with the naked eye, the presence or absence of deterioration, the starting point of deterioration, and the degree of progress. It has been demanded.
Typical non-destructive analysis devices include an ultrasonic microscope (for example, Patent Document 1), an X-ray CT, a lock-in infrared heat generation analysis device, and the like.

JP-A-9-72889

With the conventional ultrasonic microscope and measurement method disclosed in Patent Document 1, only the relative film thickness distribution of the object to be analyzed could be acquired. Therefore, there is a problem that it is impossible to measure the outer shape of an electronic component having a plurality of layers of different materials or a plurality of layers with different compositions, the thickness of each layer inside, space (void), the amount of warpage, the amount of strain, and the like.

The present invention has been made in view of such circumstances. It is an object of the present invention to provide a structural analysis apparatus, a structural analysis method, and a computer program for analyzing/analyzing and displaying the structure of a part or the like, which can satisfactorily analyze the outer shape and internal structure.

A structural analysis apparatus according to an aspect of the present invention is configured to measure an interface between a first layer made of at least a first material or a first composition and a second layer made of a second material or a second composition. The present invention relates to an apparatus for analyzing a structure having

an ultrasonic generator that generates ultrasonic waves; an acquisition unit that acquires a reflected waveform of the ultrasonic waves reflected at the interface; a calculator that calculates the propagation time of the ultrasonic waves propagated to the interface based on the reflected waveform; and an analysis unit that analyzes the structure of the structure based on the speed of sound at which sound waves propagate to the interface.

A structural analysis method according to an aspect of the present invention has an interface where a first layer made of a first material or a first composition and a second layer made of a second material or a second composition are in contact. The present invention relates to a structural analysis method for structures.

Acquire the reflected waveform of the ultrasonic wave reflected at the interface, calculate the propagation time to the interface based on the reflected waveform, and analyze the structure of the structure based on the propagation time and the speed of sound when propagating to the interface characterized by

A computer program according to an aspect of the present invention provides a structure having an interface where a first layer made of a first material or a first composition and a second layer made of a second material or a second composition are in contact with each other. It analyzes the structure of objects.

Acquire the reflected waveform of the ultrasonic wave reflected at the interface, calculate the propagation time to the interface based on the reflected waveform, and analyze the structure of the structure based on the propagation time and the speed of sound when propagating to the interface. It is characterized by executing processing.

According to the present invention, the reflected waveform 39 of the ultrasonic wave reflected at each interface is acquired, and the propagation time to propagate to each interface is calculated based on the reflected waveform 39 .
In addition, the absolute film thickness, amount of warpage, amount of strain, etc. of each layer can be measured based on information such as propagation time and speed of sound when propagating to each interface, and information on material or composition.
In addition, the external shape and internal structure of the structure, such as the presence or absence of delamination, cracks, voids, etc., can be analyzed favorably.

1 is an explanatory diagram of a structural analysis device according to this embodiment; FIG. FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; FIG. 4 is an explanatory diagram of a method for measuring the time of propagation through each layer according to the embodiment; It is a flowchart figure of the structure-analysis method of this Embodiment. It is a flowchart figure of the structure-analysis method of this Embodiment. FIG. 4 is an explanatory diagram showing the relationship between Z1 and Z2 and the relationship between reflected waveforms according to the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; 1 is an explanatory diagram of a structural analysis device according to this embodiment; FIG. It is a flowchart figure of the structure-analysis method of this Embodiment. FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of results obtained by the structural analysis method of the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; 1 is an explanatory diagram of a structural analysis device according to this embodiment; FIG. 1 is an explanatory diagram of a structural analysis device according to this embodiment; FIG. FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; FIG. 4 is an explanatory diagram of a structural analysis method according to the present embodiment; 1 is an explanatory diagram of a business model using a structural analysis device and a structural analysis method of this embodiment; FIG. 1 is an explanatory diagram of a business model using a structural analysis device and a structural analysis method of this embodiment; FIG. 1 is an explanatory diagram of a business model using a structural analysis device and a structural analysis method of this embodiment; FIG. 1 is an explanatory diagram of a business model using a structural analysis device and a structural analysis method of this embodiment; FIG.

Hereinafter, the present invention will be described in detail based on the drawings showing its embodiments. In order to facilitate the explanation, the electronic component 3 will be mainly exemplified as a structural analysis object.
FIG. 1 is a block diagram showing configurations of a structural analysis device 1, an ultrasonic microscope 2, and an electronic component 3. As shown in FIG.

The structural analysis apparatus 1 includes a control section 11 that controls the entire apparatus, a main storage section 12, a communication section 13, an operation section 14, a display panel 15, and an auxiliary storage section 16. FIG. The structural analysis device 1 can be composed of, for example, a desktop computer, a notebook personal computer, a tablet, or the like.

The control unit 11 can be configured with a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like. The control unit 11 may include a GPU (Graphics Processing Unit).

The main storage unit 12 is a temporary storage area such as SRAM (Static Random Access Memory), DRAM (Dynamic Random Access Memory), flash memory, etc., and temporarily stores data necessary for the control unit 11 to perform arithmetic processing. Remember.
The communication unit 13 has a function of communicating with the structural analysis apparatus 1 via the network 170, and can transmit and receive required information.
The operation unit 14 is composed of, for example, a hardware keyboard, mouse, touch panel, and the like.

The display panel 15 can be composed of a liquid crystal panel, an organic EL (Electro Luminescence) display panel, or the like. The control unit 11 performs control for displaying required information on the display panel 15 .

The auxiliary storage unit 16 is a large-capacity memory, a hard disk, or the like, and stores a program necessary for the control unit 11 to execute processing, a waveform analysis program 171, a three-dimensional coordinate data generation program 161, and a sound velocity calculation program 162. ing.

The waveform analysis program 171, the three-dimensional coordinate data generation program 161, and the sound velocity calculation program 162 stored in the auxiliary storage unit 16 may be provided by a recording medium 169 on which each program is readable. The recording medium 169 is, for example, a portable memory such as a USB (Universal Serial Bus) memory, an SD (Secure Digital) card, a micro SD card, or a compact flash (registered trademark).

Each program recorded on the recording medium 169 is provided by communication via the communication unit 13 . Alternatively, it may be read from the recording medium 169 using a reading device (not shown) and installed in the auxiliary storage unit 16 .

The auxiliary storage unit 16 includes a scan data (1) database (DB) 163, a material or composition database (DB) 164, a scan data (2) database (DB) 165, a propagation time database (DB) 166, and a sound speed database (DB). 167, and a three-dimensional coordinate data database (DB) 168. The scan data are ultrasound waveform data with the amplitude on the vertical axis and the propagation time on the horizontal axis.

The transducer 21 has a function of moving in two-dimensional directions (X direction and Y direction) with respect to the plane on which the electronic component 3 is arranged, a function of moving an arbitrarily set distance and positioning on the electronic component 3, In order to irradiate ultrasonic waves to layer materials, interfaces, etc., the function of moving or positioning in the vertical direction (Z direction) with respect to the plane on which electronic components are arranged, the function of transmitting ultrasonic waves to interfaces, etc., and the functions of reflecting at interfaces, etc. It has a function of receiving ultrasonic waves that have been received and a function of converting or displaying received ultrasonic waves into electrical signals.

The scan data (1) DB 163 stores scan data (1) acquired at each point when the transducer 21 of the ultrasonic microscope 2 scans the XY plane of the electronic component 3 . The transducer 21 moves in the XY plane (two-dimensional direction) to irradiate the electronic component 3 with ultrasonic waves, has a position adjustment function in the direction (Z direction) perpendicular to the XY plane, and is converted into an electrical signal.

Scan data (1) is acquired at predetermined measurement intervals (distances) on the XY plane of the electronic component 3 . Note that the predetermined measurement interval is changed according to the shape of the electronic component 3 or the state of the interface. For example, the predetermined measurement interval is set or changed to a short distance at a position where the change in interface state is large.
The material or composition DB 164 stores the outer dimensions (thickness), density, and the like of the materials forming each layer of the electronic component 3 .

The scan data (2) DB 165 scans the XY plane of each material sample constituting the electronic component 3 with the transducer 21 of the ultrasonic microscope 2 in order to calculate the sound velocity of each layer, and the scan data (2 ) is remembered.
The propagation time DB 166 stores the propagation time to the interface calculated by a method described later.

The sound velocity DB 167 stores the propagation time calculated from the scan data (2) stored in the scan data (2) DB 165, and the sound velocity calculated based on the outer dimensions (thickness) of the material of each layer stored in the material or composition DB 164. remembered.
The three-dimensional coordinate data DB 168 stores three-dimensional coordinate data of the electronic component 3 generated by the three-dimensional coordinate data generation program 161 .

The electronic component 3 is, for example, an electronic component having a multilayer structure of a first layer 31, a second layer 32, a third layer 33, a fourth layer 34, and a fifth layer 35 as shown in FIG. . An example of the electronic component 3 is a power module. A power module is an electronic component that combines multiple power semiconductors and integrates power-related circuits.

In this specification, the electronic component 3 is exemplified for easy understanding, but the present invention is not limited to this. The technical idea of the present invention can also be applied to semiconductor elements, thin film devices or thick film devices, electronic equipment and the like. It can also be applied to parts of electronic parts or semiconductor elements, such as soldered parts of BGA (Ball Grid Array), Anisotropic Conductive File (ACF), conductive paste, anisotropic conductive paste, etc. can be done. It can also be applied to a part or the whole of an animal such as a human being or a living organism. It can also be applied to structures coated with paint or the like.

The present invention provides a structure having a plurality of layers of different materials or a plurality of compositions, as long as it has an interface where different materials or different compositions are in contact, the thickness of the material or the thickness constituting the composition, or The three-dimensional amount of warp, amount of distortion, etc. can be satisfactorily measured or observed. Therefore, it goes without saying that the technical idea and method of the present invention can be applied to the structural analysis of objects composed of multiple materials and organisms composed of multiple compositions.

The ultrasonic microscope 2 uses a pulse generator (not shown) to shape a transmission wave 23 of an electrical signal of a constant frequency into a pulse shape, and then converts the electrical signal into mechanical vibration (ultrasonic waves) by a transducer 21 .

The transducer 21 scans the XY plane of the electronic component 3 . The generated ultrasonic wave is focused on the interface in the depth direction (Z direction) of the electronic component 3 by an acoustic lens (not shown), and the transmitted wave 23 is irradiated, and the received wave 24 is converted into an electric received signal. do.

A gate (not shown) extracts a reflected wave detected from the reflected signal of the electronic component 3 for a predetermined time from a predetermined time, or for a certain period of time. The focal position of the acoustic lens is adjusted to the interface so that the reflected wave input to the gate becomes a predetermined threshold value or maximum. Also, the gain is adjusted so that the intensity of the signal received by the gate is constant, and the propagation time at each interface is calculated.

FIG. 2 shows a method of calculating the thickness of each layer of the electronic component 3 and the amount of warp, distortion, etc. of each interface. FIG. 2 illustrates, as an example, the case where the first layer 31 is "copper", the second layer 32 is "solder", and the third layer 33 is "element". A transmission wave 23 (U1) of an ultrasonic wave oscillated from the transducer 21 toward an interface (surface) 31a on the input side of the first layer 31 made of copper, for example, is reflected at the interface 31a, and a received wave 24 (R1) is received. A propagation time t1 from the transducer 21 to the interface is calculated based on the reflected waveform 39 at the interface 31a.

An ultrasonic transmission wave 23 (U2) oscillated from the transducer 21 toward the interface 32a between the first layer 31 and the second layer 32 made of solder, for example, is reflected at the interface, and the received wave 24 (R2) is received. A propagation time t2 for propagating through the first layer 31 is calculated based on the reflected waveform 39 at the interfaces 31a and 32a.

An ultrasonic transmission wave 23 (U3) oscillated from the transducer 21 toward the interface 33a between the second layer 32 and, for example, the third layer 33 made of elements is reflected at the interface 33a and becomes a received wave 24 ( R3) is received. A propagation time t3 for propagating through the second layer 32 is calculated or obtained based on the reflected waveform 39 at the interfaces 32a and 33a.

The distance from the transducer 21 to the interface 31a, the distance from the interface 31a to the interface 32a, and the distance from the interface 32a to the interface 33a can be calculated or obtained based on the respective sound velocities at the calculated propagation times t1, t2, and t3. can. By adding the distance in the depth direction (Z direction), the displacement of the interfaces 31a, 32a, and 33a of the electronic component 3 is generated as three-dimensional coordinate data, and data such as the material or composition DB 164 is used. , the thickness of each layer of the electronic component 3 and the like, and the amount of warpage and strain at each interface can be calculated or obtained.

FIG. 3 shows a method for accurately measuring the propagation time in each layer. In FIG. 3(a1), since the transducer 21 is focused on the interface 31a, in the scan data of FIG. 3(a2), the peak intensity of the front waveform is strong, but the peak intensity of the back waveform is weak. ing.

In FIG. 3(b1), the transducer 21 is focused between the interface 31a and the interface 32a, so the peak intensity of the waveform at the back of the scan data of FIG. 3(b2) is stronger than that of (a2). It's becoming

In FIG. 3(c1), since the transducer 21 is focused on the interface 32a, the peak intensity of the waveform at the back of the scan data of FIG. 3(c2) is stronger than that of FIG. 3(b2). .

From the above, when it is desired to measure the propagation time of the reflected wave at the interface 31a, the waveform peak can be captured with high accuracy by focusing the transducer 21 on the interface 31a as shown in FIG. 3(a1).

On the other hand, when measuring the propagation time of the reflected wave at the interface 32a, the waveform peak can be accurately captured by focusing the transducer 21 on the interface 32a as shown in FIG. 3(c1).

As for the method of exploratory scanning of the focus position where the peak intensity is the highest, a hill-climbing method as shown in FIG. 17 is performed. The hill-climbing method selects ``the solution with the best performance among the neighborhoods of the current solution'' as the neighborhood solution, and replaces the neighborhood solution with the current solution ``when the performance of the neighborhood solution is better than the current solution'' It is a local search method. The goal is to find the extremum, and the search ends when the extremum is found.
By changing the focus position, the peak waveform at the interface position changes as shown in FIGS.

Starting from the position of arrow A in FIG. 17(a), the peak intensity changes to arrow B in FIG. 17(b), arrow C in FIG. 17(c) and arrow D in FIG. 17(d). From the position of arrow A in FIG. 17(a), the focus position is shifted in the direction where the peak intensity becomes higher, but it passes the position of arrow B in FIG. 17(b) and reaches the position of arrow C in FIG. 17(c). As you go, the peak intensity becomes lower. At this point, in order to increase the peak intensity, it is necessary to return the focal position to the position indicated by arrow D in FIG. 17(d).

By repeating such processing many times, it is possible to search for the focus position where the peak intensity is the highest. Although this method can manually search for the position where the peak intensity is high, it can be searched more efficiently by a computer program.

In this way, while observing the peak intensity of the scan data, the target to be measured (interface 31a, interface 32a, interface 33a) is exploratory scanned for the focal position where the peak intensity is the highest, and the waveform at that focal position is By detecting the peak, it is possible to accurately measure the propagation time in each layer.

It should be noted that detection of the peak position is not limited to only the maximum value or minimum value. For example, it may be processed that the peak position is detected when it is within −5% of the maximum value or within a quantitative predetermined value range. Also, when the peak position is within +5% of the minimum value or within a quantitative predetermined value range, it may be processed as having detected the peak position.
That is, a predetermined threshold is set, and processing is performed using the set threshold. The threshold is set according to the physical properties of the object to be measured. The threshold is registered in the database 163 or the like.

The transducer 21 sequentially moves in the X and Y directions on each material sample 3 and detects the waveform at each position. At each X position Y position, move the transducer 21 in the Z direction.

By changing the focus of the transducer 21 depending on the object to be measured (interface 31a, interface 32a, interface 33a), and detecting whether the waveform peak or received signal is above a predetermined threshold or below a predetermined threshold from the scan data, each layer is propagated Time can be measured with high accuracy.

By changing the focal position of the transducer 21 and acquiring scan data, information on the waveform peak, or above or below a predetermined threshold, or the rate of change of the waveform can be obtained, thereby accurately measuring the time it takes to propagate through each layer. can do.

By adjusting or changing the phase of the transmission wave of the ultrasonic wave transmitted by the transducer 21 and acquiring the scan data of the reception wave, information on the waveform peak, or above a predetermined threshold or below a predetermined threshold, or the change speed of the waveform can be obtained. Therefore, it is possible to accurately measure the propagation time of each layer.
Change the focal position of the transducer 21 depending on the object to be measured (interface 31a, interface 32a, interface 33a),

Alternatively, by adjusting or changing the phase of the transmission wave of the ultrasonic waves transmitted by the transducer 21, it is possible to obtain information on each waveform peak, or above or below a predetermined threshold, or the change speed of the waveform. In addition, when it is adjusted to the interface 32a, information such as waveform peaks of the interface 33a can be obtained in addition to the interface 32a, so that the time required to propagate through each layer can be accurately measured.

As shown in FIG. 18(a), for example, it is assumed that the electronic component 3 has interfaces (31a, 32a, 33a). The transducer 21 sequentially moves to the measurement position 181 by a predetermined distance dx in the X direction and by a predetermined distance dy in the Y direction. A focus position is adjusted at the measurement position 181 . An ultrasonic wave is emitted at the moved measurement position 181, and a reflected wave of the ultrasonic wave at the interface is received. By moving or changing the focus position in the Z-axis direction, the positions of the interfaces 31a, 32a, and 33a are obtained. The determined interface positions are stored in a database.

As shown in FIG. 18(b), when the electronic component 3 is formed of three materials or structures of a first layer 31, a second layer 32 and a third layer 33, the In the A position only the third layer 33 is present. At position B in FIG. 18(b), the first layer 31 and the third layer 33 are present. A first layer 31, a second layer 32, and a third layer 33 are present at position C in FIG. 18(b).
The transducer 21 is moved by predetermined distances dx and dy, positioned, and the interface position is determined by changing the focal position.

In FIG. 18B, in the area including A, the propagation time t1 from the water surface to the third layer 31 and the propagation time t2 of the third layer 33 are measured. The unevenness, warpage, and distortion of the third layer 33 in the region containing A are calculated.

In FIG. 18B, in the region including B, the propagation time t3 from the water surface to the first layer 31, the propagation time t4 of the first layer, the propagation time t5 from the first layer 31 to the third layer 33, the third Measure the layer propagation time t6. The unevenness, warp, and strain of the first layer 31 and the unevenness, warp, and strain of the third layer 33 in the region containing B are calculated. Also, the difference between the thickness of the third layer in the region containing A and the thickness of the third layer in the region containing B is quantitatively measured.

In FIG. 18B, in the area including C, the propagation time t7 from the water surface to the first layer 31, the propagation time t8 of the first layer, the propagation time t9 of the second layer 32, and the propagation time t10 of the third layer are Measure. The unevenness, warp, and strain of the first layer 31, the unevenness, warp, and strain of the second layer 32, and the unevenness, warp, and strain of the third layer 33 in the region containing C are calculated. Also, the difference between the thickness of the first layer in the region containing B and the thickness of the first layer in the region containing C is quantitatively measured. Also, the difference between the thickness of the third layer in the region containing B and the thickness of the third layer in the region containing C is quantitatively measured.

FIG. 4 is a flow chart showing a procedure of processing for calculating the speed of sound when propagating through a material by the control unit 11 . The control unit 11 reads out the sound speed calculation program 162 and executes sound speed calculation processing.

The control unit 11 causes the transducer 21 of the ultrasonic microscope 2 to scan each material sample constituting the electronic component 3 on the XY plane, and acquires scan data using the measurement method shown in FIG. S1). The number of points on the XY plane for acquiring scan data is the same as the number of points on the XY plane for acquiring scan data of the electronic component 3 .
However, the present invention is not limited to this. For example, if the change in acquired scan data is large, the number of measurement points per unit distance is increased.

The control unit 11 stores the obtained scan data in the scan data (2) DB 165 (S2). The control unit 11 determines the propagation speed through the material based on the difference between the time at which the reflected waveform 39 reaches the peak at the interface on the material exit side of the scan data and the time at which the reflected waveform 39 reaches the peak at the interface on the material entry side of the scan data. A time is obtained (S3).

Alternatively, a predetermined threshold value is set for the received wave 24, and the propagation time for propagating through the material is obtained from the range of the predetermined threshold value or more or the predetermined threshold value or less, the rate of change, or the like.
The control unit 11 stores the propagation time in the propagation time DB 166 (S4).
The control unit 11 acquires the outer dimensions (thickness) of the material from the material or composition DB 164 (S5).
The control unit 11 calculates the sound velocity of the material based on the propagation time and the thickness (S6).
When the propagation time is t and the thickness is L, the speed of sound is calculated by the following formula.
Sound speed = L/t.
The control unit 11 stores the sound speed in the sound speed DB 167 (S7).

FIG. 5 is a flow chart showing a procedure of three-dimensional coordinate data generation processing by the control unit 11. As shown in FIG. The control unit 11 reads out the waveform analysis program 171 and the three-dimensional coordinate data generation program 161 and executes three-dimensional coordinate data generation processing.

The control unit 11 causes the transducer 21 of the ultrasonic microscope 2 to scan the XY plane of the electronic component 3, and obtains scan data at each point on the XY plane for each layer using the measurement method shown in FIG. (S11).
The control unit 11 stores the obtained scan data in the scan data (1) DB 163 (S12).

The control unit 11 determines the range for detecting the peak of the reflected waveform 39 at the material interface (S13). The initial set range of the peak detection range is calculated in advance or obtained using the external dimensions (thickness) of the material obtained from the material or composition DB 164 and the sound speed obtained from the sound speed DB 167 for the object to be measured. to the extent possible.
The control unit 11 determines whether or not the acoustic impedance Z2 of the lower layer is greater than the acoustic impedance Z1 of the upper layer (S14).
Acoustic impedance indicates how difficult it is for ultrasonic waves to pass through, and is calculated by the following equation.
Z (acoustic impedance) = p (density of material) x c (proper sound velocity of material).

The substance may be a mixture of multiple substances, or may be an alloy of multiple metals. In addition, some substances have minute voids (voids, etc.) in the substance. In addition, a substance may be a combination of multiple materials loosely and densely, synthesized, and turbid. In addition, there are cases where a substance is configured by forming a thin film having a thickness equal to or smaller than the light wavelength in multiple layers. These cases are collectively treated as acoustic impedance.

Therefore, substances mean things having these various materials, constitutions, and compositions, and the density of substances also means the total or microscopic density of these substances. In addition, the material-specific sound velocity also means the synthetic or microscopic sound velocity of these materials.

Acoustic impedance, in a narrow sense, is the material's density times the material's peculiar sound velocity. However, the constant ratio or constant to the acoustic impedance includes addition, subtraction, multiplication, and division.

Further, it goes without saying that the acoustic impedance may include addition, subtraction, multiplication, or division with a constant ratio or constant that varies depending on, for example, temperature.

When it is determined that Z2>Z1 (S14: YES), the control unit 11 calculates the local maximum value of the reflected waveform 39 within the detection range because the reflected waveform 39 is a positive waveform (S15). .
The control unit 11 calculates the propagation time of the reflected waveform 39 to the local maximum (S15).

If it is determined that Z2>Z1 is not true (S14: NO), the control unit 11 calculates the local minimum value of the reflected waveform 39 within the detection range because the reflected waveform 39 is a negative waveform (S17).
The control unit 11 calculates the propagation time of the reflected waveform 39 to the local minimum value (S18).

As shown in FIG. 2, when the interface is the interface 31a of the first layer 31, t1 is calculated as the propagation time. If the interface is 32a between the first layer 31 and the second layer 32, calculate t2. If the interface is 33a between the second layer 32 and the third layer 33, calculate t3.

In S19, the control unit 11 calculates the distance (interface position) from the lower surface (reference point) of the transducer 21 to each interface based on the calculated propagation time. The control unit 11 acquires the respective sound velocities when the ultrasonic waves propagate to each interface from the sound velocity DB 167 (from S7), and the sound velocities corresponding to the materials constituting each layer during the propagation time when propagating between the interfaces. to calculate the distance.
The control unit 11 generates three-dimensional coordinate data based on the calculated interface position (S20).
The control unit 11 stores the three-dimensional coordinate data in the three-dimensional coordinate data DB 168 (S21).
When the acoustic impedance Z1 of the upper layer of the superimposed material and the acoustic impedance Z2 of the lower layer are assumed, the amplitude reflectance of the sound wave at the interface is
(Z2-Z1)/(Z2+Z1).

is calculated as That is, if the acoustic impedances Z1 and Z2 of both materials are equal, no reflection occurs. Therefore, as shown in FIG. 6, (b1) is Large Positive, (b2) is Positive, (b3) is No Signal, and (b4) is In the case of (b5), the waveform is negative, and in the case of (b5), the waveform is large negative.

In an embodiment, a transmitted wave 23 is transmitted to the structure 3 and a received wave 24 is measured or analyzed. The measurement or analysis is performed on the amplitude and amplitude of the received wave within a predetermined second time (gate time) from the first time when the received wave was received, and the time when the received wave was received from the time when the transmitted wave was transmitted. , and the polarity (positive, negative) of the received wave.

In addition, the measurement or analysis shall be performed on the magnitude of the amplitude of the received wave, the rate of change in the amplitude, the rate of change in the amplitude, and the Operation or calculation is performed using the polarity (positive, negative) of .
Calculations or calculations are performed using DB data such as dimensions and densities of materials constituting the structure.

For example, as shown in FIGS. 7A1 and 7A2, when the first layer 31 is made of resin and the second layer is made of copper (Cu), the waveforms at the interfaces 31a and 32a are positive waveforms, and the waveform at the interface 33a is Negative waveform.
A structure 3 such as an electronic component is placed in water, ultrasonic waves are applied, and acoustic impedance is measured.

As shown in FIG. 7(a1), interfaces 31a and 33a are in contact with water. At the interface 31a, when the acoustic impedance of resin is Z2 and the acoustic impedance of water is Z1, there is a relationship of Z2>Z1, but generally the difference between Z2 and Z1 is small. Therefore, the waveform is positive, but the peak is small.

At the interface 32a, when Z1 is the acoustic impedance of the resin and Z2 is the acoustic impedance of copper (Cu), there is a relationship of Z2>Z1, and the difference between Z2 and Z1 is large. Therefore, it becomes a positive waveform with a large peak.

At the interface 33a, when the acoustic impedance of copper is Z2 and the acoustic impedance of water is Z1, there is a relationship of Z2<Z1, and the difference between Z2 and Z1 is large. Therefore, it becomes a negative waveform with a large peak.

The difference in propagation time from the transducer 21 to the local maximum of the waveform at each of the interfaces 31a and 32a is t2. The difference in propagation time to the local maximum of the waveform at interface 32a and the local minimum of the waveform at interface 33a is t3.

As shown in FIGS. 7B1 and 7B2, when the first layer 31 is made of resin, the second layer 32 is made of silicon, and the third layer 33 is made of adhesive, the waveforms at the interfaces 31a and 32a are positive waveforms, and the interfaces The waveforms at 33a and 34a are negative waveforms.

In FIG. 7(b1), interfaces 31a and 34a are in contact with water. At the interface 31a, when the acoustic impedance of resin is Z2 and the acoustic impedance of water is Z1, there is a relationship of Z2>Z1, but generally the difference between Z2 and Z1 is small. Therefore, the waveform is positive, but the peak is small.

At the interface 32a, when Z1 is the acoustic impedance of the resin and Z2 is the acoustic impedance of the silicon, there is a relationship of Z2>Z1, and although there is a difference between Z2 and Z1, the difference is not large. Therefore, the peak becomes a slightly larger positive waveform than the interface 31a.

At the interface 33a, when the acoustic impedance of silicon is Z1 and the acoustic impedance of the adhesive is Z2, there is a relationship of Z2<Z1, and there is a large difference between Z2 and Z1. Therefore, the peak becomes a large po-negative waveform.

At the interface 34a, when the acoustic impedance of the adhesive is Z1 and the acoustic impedance of water is Z2, there is a relationship of Z2<Z1, and the difference between Z2 and Z1 is relatively large. Therefore, it becomes a negative waveform with a relatively large peak.

The difference in propagation time to the local maximum of the waveform at each of the interfaces 31a and 32a is t2. The difference in propagation time to the local maximum of the waveform at interface 32a and the local minimum of the waveform at interface 33a is t3. The difference in propagation time to the local minimum of the waveform at each of interfaces 33a and 34a is t4.
The example of FIG. 7(c1) shows a state in which a void (space) 36 is generated in the central portion of the resin and silicon.

As shown in FIGS. 7(c1) and 7(c2), when the first layer 31 is made of resin and the second layer 32 is made of silicon, the interface 31a is the interface between water and resin. The waveform becomes a positive waveform.

The interface 32 b is the interface between the resin 31 and the void (space) 36 . The difference (Z2-Z1) between the acoustic impedance Z2 of the resin and the acoustic impedance Z1 of the space (void) is large.

Therefore, a large negative waveform is detected at the interface 32b. The difference in propagation time to the local maximum of the waveform at interface 31a and the local minimum of the waveform at interface 32a is t2. Occurrence of voids at the interface 32b can be easily detected from the detected waveform.

FIG. 8 is a block diagram showing the configuration of the user's terminal device 4. As shown in FIG. The terminal device 4 includes a control unit 41 that controls the entire device, a main storage unit 42, a communication unit 43, an operation unit 44, a display panel 45, and an auxiliary storage unit 46. The terminal device 4 can be configured by, for example, a desktop computer, a notebook personal computer, a tablet, a smart phone, or the like.

The control unit 41 can be composed of a CPU, a ROM, a RAM, and the like. The main storage unit 42 , communication unit 43 , operation unit 44 and display panel 45 have the same configuration as the main storage unit 12 , communication unit 13 , operation unit 14 and display panel 15 of the structural analysis apparatus 1 .

The auxiliary storage unit 46 is a large-capacity memory, a hard disk, or the like, and stores a program necessary for the control unit 41 to execute processing, a calculation program 803 for calculating the thickness of each material, and the amount of warp and strain of each material. A calculation program 804 for calculation and a display program 805 are stored.

Each program stored in the auxiliary storage unit 46 may be provided by a recording medium 808 that records each program in a readable manner. The auxiliary storage unit 46 further stores a three-dimensional coordinate data DB802.

FIG. 9 is a flow chart showing the procedure of display processing of the three-dimensional structure of the electronic component 3 by the control unit 41 . The control unit 41 acquires the three-dimensional coordinate data stored in the three-dimensional coordinate data DB 168 from the recording medium 808 (S31).

When the structural analysis device 1 and the terminal device 4 are connected via a network 809 such as the Internet, the three-dimensional coordinate data are provided by communication via the communication units 13 and 43 .
The control unit 41 stores the three-dimensional coordinate data in the three-dimensional coordinate data DB 802 (S32).

When the structural analysis apparatus 1 and the terminal device 4 are not connected to the Internet and the three-dimensional coordinate data is recorded in the recording medium 808, a reading device (not shown) is used to read the data from the recording medium 808, You may memorize|store in the memory|storage part 46. FIG.

The control unit 41 reads the display program 805 (S33). After that, the display is updated (S34), and it is determined whether or not the display item has been accepted by the operation of the operation unit 44 by the user (S35).

When the user ends the program (S35(c)), the control unit 41 ends the display program. On the other hand, when the user changes the cross-section display position (change of display items (4) to (9)) (S35(b)), which will be described later, the calculation program 803 for calculating the thickness of each material is read (S36). .

The controller 41 calculates the thickness of each material (S37). After that, the calculation program 804 for calculating the amount of warp, the amount of strain, etc. of each material is read out (S38). The control unit 41 calculates the amount of warp, amount of strain, etc. of each material (S39), and updates the display based on the calculated thickness, amount of warp, amount of strain, etc. (S34).
On the other hand, in cases other than the above (S35(a)), the display is updated according to each display item (S34).
Display items include the following items.
• Display items (1) Display mode Either a mode for displaying each interface of the components constituting the electronic component 3 or a mode for displaying each layer is set.
・Display item (2) Rotating viewing Rotate and view the displayed object in three dimensions from an arbitrary viewpoint.
・Display item (3) Color map Change the color map of the displayed object.
・Display item (4) Display of scan data (Z-direction data) by point designation Displays the scan data of the point designated on the plan view. If the coordinates are entered numerically, the scan data of the points at those coordinates will be displayed.
・Display item (5) Cross-section display by specifying a point A cross-section in the X direction or Y direction of the specified point on the plan view is displayed. When the coordinates are entered numerically, the X- or Y-direction cross-section of the point at the coordinates is displayed.
・Display item (6) Cross-section display by specifying a line A cross-section connecting two points specified on the plan view is displayed. When the coordinates are entered numerically, a cross section connecting the coordinates of the two points is displayed.
・Display item (7) Absolute film thickness display of each layer in the cross section by point or line designation ・Display item (8) Display of warp amount or strain amount of each layer in the cross section by point or line designation ・Display item (9) Display of the presence or absence of peeling, cracks, voids, etc. of each layer in the cross section by specifying points or lines

When acquiring the three-dimensional coordinate data stored in the three-dimensional coordinate data DB 168 , the terminal device 4 may acquire the display program 805 at the same time and install it in the auxiliary storage section 46 .

FIG. 10 is a plan view image of the surface (interface 33a) of the third layer 33 composed of elements of the electronic component 3 of FIG. Displacements from the reference point can be contoured by color display.
FIG. 11 shows a three-dimensional image of the interface 33a when the display mode (display item (1)) is the interface display, and can be rotated and browsed (display item (2)).

FIG. 12 is a graph showing a cross section taken along a line parallel to the X-axis passing through the points shown in FIG. The horizontal axis indicates the X coordinate, and the vertical axis indicates the absolute film thickness of the first layer (copper layer) 31 (display item (7)).

FIG. 13 is a graph showing a cross section taken along a line parallel to the Y-axis passing through the points shown in FIG. The horizontal axis indicates the Y coordinate, and the vertical axis indicates the absolute film thickness of the first layer (copper layer) 31 (display item (7)).

14 is a cross-sectional view taken along a line parallel to the X-axis passing through the point shown in FIG. 10. FIG. The horizontal axis indicates the X coordinate, and the vertical axis indicates the absolute film thickness of the second layer (solder layer) 32 (display item (7)).

FIG. 15 is a cross-sectional view taken along a line parallel to the Y-axis passing through the points shown in FIG. The horizontal axis indicates the Y coordinate, and the vertical axis indicates the absolute film thickness of the second layer (solder layer) 32 (display item (7)).

FIG. 16 is a cross-sectional view taken along a line parallel to the X-axis passing through the points shown in FIG. As noted above, the displacement of interface 33a from a reference point can be calculated and is represented graphically. Further, by obtaining a perpendicular line from the interface 33a to a straight line connecting two points on the interface 33a, it is possible to measure the maximum amount of warp, strain, etc. in this cross section (display item (8) ).

By setting the display items, the thickness of the first layer 31, the thickness of the second layer 32, the displacement of the interface 31a, the interface 32a, and the interface 33a in the cross section connecting any two points, and the maximum displacement between two points on the interface The amount of warpage, the amount of distortion, etc. can also be similarly measured.

In the above embodiments, the electronic component 3 is exemplified to measure the absolute film thickness, amount of warpage, amount of strain, etc. of each layer constituting the electronic component 3, and to measure peeling, cracks, voids, etc. explained.

However, the present invention is not limited to this. For example, as exemplified in FIGS. 19(a1), 19(a2), and 19(a3), it goes without saying that the present invention can be applied to living organisms such as living organisms.
As shown in FIG. 19(a1), by applying the present invention, it is possible to measure the film thickness or distance to an organ 32 in the body, the shape of the organ 32, and the like.

For example, when observing the state of a fetus in a pregnant woman, it is possible to apply a sensor to the abdomen, send ultrasonic waves into the body, receive the reflected waves therefrom, and form an image. Since the appearance and movement of the fetus can be obtained in real time, it is possible to observe the growth status.

As shown in FIG. 19(a2), by applying the present invention, it is possible to measure the film thickness or distance of the subcutaneous fat 31 of the living body, the distance to the visceral fat 33, the shape of the surface of the visceral fat 33, and the like. can.

As shown in FIG. 19(a3), by applying the present invention, it is possible to measure the thickness 34 or the distance of the epidermis 31, the dermis 32, the subcutaneous tissue 33, and the muscle, and the shape of each surface. can.
For example, it is possible to send ultrasonic waves into the body by applying a sensor to the body surface, receive the reflected waves from there, visualize the shapes and movements of organs and tissues, and detect abnormalities early.

According to the present invention, the hardness of tissues in the body can be displayed in color, which is useful for grasping the state of tumors. Furthermore, not only the presence or absence of a tumor, but also its size and invasion depth can be examined.

In addition, it is possible to observe the thickness of subcutaneous fat and muscle in an image by applying a sensor to the body surface, sending ultrasonic waves into the body, and receiving the reflected waves returned therefrom. By obtaining image data on a daily basis, you can check the effects of exercise and dieting, and support health management and beauty slimming.

The above are examples in which the present invention is applied to living organisms. It goes without saying that it can be applied even if it relates to

As shown in FIG. 19(b1), by applying the present invention, it is possible to measure the thickness of the undercoat coating film 32 and the topcoat coating film 31 applied to the substrate, and the surface shape of the coating film or the substrate 33. can.

As shown in FIG. 19(b2), by applying the present invention, the thickness of the cavity (void etc.) 36 generated between the concrete (31, 33), the area, range or position of the cavity (void etc.) 36 can be measured.

For example, conditions inside concrete/metal can be observed. When ultrasonic waves propagate through materials, they have the property of being reflected at the boundaries of different materials, so it is possible to detect the presence or absence of defects inside the concrete and metal of buildings.

By multiplying the propagation time of ultrasonic waves by the speed of sound, the depth of the flaw can be accurately determined. Since internal cracks can be determined non-destructively, it can be used for deterioration diagnosis, earthquake resistance diagnosis, and product inspection before shipment.

It is possible to measure the internal thickness, warpage, and distortion of roads, buildings, walls, and coatings. A sensor is applied to the food, ultrasonic waves are sent, the reflected waves are received, and the inside of the food can be imaged. It is possible to detect foreign substances such as acrylic pieces in food, and it is useful for quality inspection at manufacturing sites.

As described above, a structural analysis apparatus according to an aspect of the present invention is a structural analysis apparatus for a structure having a plurality of materials or a plurality of compositions and an interface where the plurality of materials or the plurality of compositions contact each other. , an ultrasonic wave transmitting/receiving unit for transmitting a transmitting wave that has transmitted an ultrasonic wave to the structure and receiving a received wave; A position adjustment unit that performs position adjustment, a database unit that stores information on the plurality of materials or a plurality of compositions, and from a first time after a predetermined time has passed after transmission by the ultrasonic wave transmission/reception unit Using the information of the received wave received within the time and the information of the plurality of materials or the plurality of compositions stored in the database unit, the film thickness of the plurality of materials, the thickness of the plurality of compositions, or their A calculation unit is provided for obtaining a three-dimensional amount of warp, amount of distortion, and the like.

According to this aspect, the reflected waveform 39 of the ultrasonic wave reflected at each interface is obtained, the propagation time to propagate to each interface is calculated based on the reflected waveform 39, and the propagation time and each when propagating to each interface Based on the material or composition information such as sound velocity, the absolute film thickness of each layer, the amount of warpage, the amount of distortion, etc., and the external shape and internal structure of the structure, such as the presence or absence of peeling, cracks, voids, etc. can be parsed into

In the structural analysis apparatus described above, the calculator calculates the acoustic impedance of the first material and the second material that constitute the structure and is in contact with the acoustic impedance of the first material in a predetermined time range, or calculates the acoustic impedance of the first material that is in contact with the structure. and the acoustic impedance of the second composition in a predetermined time range, and from the changes in the first and second acoustic impedances in the predetermined time range, the first material and the second composition or the position at which the first composition and the second composition are in contact with each other.

According to this aspect, the position at which the first material and the second material are in contact or the position at which the first composition and the second composition are in contact can be determined satisfactorily. Therefore, the three-dimensional coordinate data of the structure can be favorably generated.

In the above embodiment, the transducer 21 is used to obtain the reflected waveform 39 of the ultrasonic wave reflected at each interface, and the propagation time to propagate to each interface is calculated based on the reflected waveform 39 . In addition, based on the material or composition information such as the propagation time and the speed of sound when propagating to each interface, the absolute film thickness of each layer, the amount of warpage, the amount of strain, etc. can be measured, and peeling, cracks, voids, etc. Analyze the external shape and internal structure of the structure such as the presence or absence of

20A and 20B are explanatory diagrams showing a method of detecting voids 36 by the transducer 21. FIG. A void 36 is generated in the solder layer 32 . The transducer 21 moves at predetermined distance intervals in the X-axis direction and the Y-axis direction. It moves from the position of the transducer 21a to the position of the transducer 21b, and outputs transmission waves to the solder layer 32 and receives reception waves from the solder layer 32 at each positioned position. At each position, the transducer 21 is moved in the Z-axis direction by a predetermined distance, and the acoustic impedance is obtained at each position.

Using a database of measured acoustic impedances and, for example, the propagation time of a negative waveform with a large peak at the interface 32b in the embodiment of FIG. 7(c1), the presence, position, and size of voids are detected. do. As a result, the voids 36 can be sequentially detected in near-real time.

Although the above embodiment is a method or apparatus for detecting voids 36 in solder layer 32, the present invention is not limited to this. Needless to say, a wide variety of things can be analyzed non-destructively, such as air bubbles in adhesive resin, spaces in concrete blocks, inclusions of other metals in iron material parts, and fat grains in the internal organs of organisms. .

FIG. 21 is an embodiment of a method for detecting growth layers growing or occurring between layers. For example, in a structure in which a second metal and a third metal are in contact with each other, when the structure is heated, the second metal and the third metal alloy layer may occur. The resulting alloy layer grows thicker as the heating continues.

In FIG. 21A, the first metal layer 31 and the second metal layer 32 are in contact, and the second metal layer 32 and the third metal layer 33 are in contact. An interface 32 a exists between the first metal layer 31 and the second metal layer 32 , and an interface 33 a exists between the second metal layer 32 and the third metal layer 33 .

In FIG. 21(b), the second metal and the third metal react at the interface between the second metal layer 32 and the third metal layer 33, and the alloy layer 34 grows. The growth of alloy layer 34 depends on the temperature to which it is heated. Moreover, it differs depending on the material or structure of the metal layer 32 and the metal layer 33 .

As shown in FIG. 21(b1), the generation of the alloy layer 34 causes a reflected waveform 39c to occur between the metal layer 32 and the alloy layer 34, and the reflected waveform 39c changes as the alloy layer 34 changes. In addition, due to the generation of the alloy layer 34, a reflected waveform 39d is generated between the metal layer 33 and the alloy layer 34, and the reflected waveform 39d changes as the alloy layer 34 changes.

FIG. 22 shows the measured reflected waveform. FIG. 22(a) shows the case of having an interface 32a and an interface 33a as in FIG. 21(a). FIG. 22(b) shows the case of having interfaces 32a, 33a and 34a as in FIG. 21(b).

When the alloy layer 34 is generated, the reflected waveform 39b shown in FIG. 21(a) changes to the reflected waveform 39c shown in FIG. 21(b). The occurrence of a difference in peak intensity of these waveforms means that a difference in acoustic impedance has occurred, which means that an alloy layer has occurred and a change in composition has occurred. Therefore, the generation of the alloy layer and the change in composition can be detected or measured by measuring the difference in peak intensity of the waveform.

Further, in FIG. 21( b ), when the film thickness x of the alloy layer 34 changes, the time difference t between the reflected waveform 39c and the reflected waveform 39d changes. By measuring the time difference t, changes in the thickness and composition of the alloy layer 34 can be detected or measured. If the composition of the alloy layer 34 changes with time, the peak intensity of the waveform, the magnitude of the acoustic impedance, or the polarity will change, as illustrated in FIG .

FIG. 23 schematically graphs changes in the magnitude of acoustic impedance over time (h). Similarly, when the film thickness of the alloy layer 34 changes with time, the time difference between the reflected waveforms 39c and 39d changes. For example, as shown in FIG. 24, the rate of change of the film thickness x (μm) with respect to the heating time varies between the heating temperature T1° C. and the temperature T2° C. FIG.

The change can be grasped by the time difference between the reflected waveform 39c and the reflected waveform 39d. Similarly, even when the composition of the alloy layer 34 changes at temperatures T1° C. and T2° C., it can be grasped by acquiring the graph of FIG.

By the above method, using the transducer 21, the reflected waveform 39 and the time difference t of the ultrasonic wave reflected at each interface are acquired, and the reflected waveform database as shown in FIG. 22 and the reflected waveform database as shown in FIGS. By using the time-series data, it is possible to grasp or measure the film thickness x and distribution of the alloy layer 34 and changes in the alloy state in a non-destructive manner.

Further, the transducer 21 is moved by a predetermined distance in the Z-axis direction of the XY-axis direction and the depth direction, and the smaller the moving distance and the larger the number of measurement points, the larger the number of data that can be acquired. It is possible to increase the accuracy of detecting changes in the film thickness x and distribution of and the state of the alloy.

25A and 25B are explanatory diagrams showing a method of measuring and detecting the film thickness, film thickness distribution, etc. of the alloy layer 34 by the transducer 21. FIG. A film thickness distribution of the alloy layer 34 occurs in the solder layer 32 . The transducer 21 moves at predetermined distance intervals in the X-axis direction and the Y-axis direction. It moves from the position of the transducer 21a to the position of the transducer 21b, and at each positioned position, it outputs a transmission wave to the alloy layer 34 and receives a reception wave from the alloy layer 34 and the like.

At each position, the transducer 21 is moved in the Z-axis direction by a predetermined distance, and the acoustic impedance is obtained at each position. Changes in the film thickness and distribution of the alloy layer 34 and the state of the alloy are detected from a database of measured waveform peak intensities and acoustic impedances.

Also, the heating time or heating temperature of the alloy layer 34 can be estimated. Thereby, the state of the alloy layer 34 can be sequentially detected in a state close to real time.

In the above examples, the alloy layer 34 is generated between the metal layer 32 and the metal layer 33, and the growth (film thickness change, configuration or structure etc.) was explained as measuring. The present invention is not limited to this. For example, even if the metal layer 31, the metal layer 32, and the metal layer 33 are composed of an organic material such as resin, the change, composition, or structure of the constituent layer 34 can be measured or observed. In addition, it goes without saying that it is possible to non-destructively analyze and analyze a wide variety of things such as air bubbles in adhesive resin, spaces in concrete blocks, inclusions of other metals in iron material parts, and fat grains in the internal organs of living organisms. .

A structural analysis apparatus according to an aspect of the present invention is configured to measure an interface between a first layer made of at least a first material or a first composition and a second layer made of a second material or a second composition. The present invention relates to an apparatus for analyzing a structure having

An ultrasonic wave generating unit that generates ultrasonic waves, an acquisition unit that acquires the reflected waveform 39 of the ultrasonic wave reflected at the interface, a calculation unit that calculates the propagation time propagated to the interface based on the reflected waveform 39, and the propagation time and an analysis unit that analyzes the structure of the structure based on the speed of sound at which the ultrasonic wave propagates to the interface.

A computer program according to an aspect of the present invention provides a structure having an interface where a first layer made of a first material or a first composition and a second layer made of a second material or a second composition are in contact with each other. It analyzes the structure of objects. Acquire the reflected waveform 39 of the ultrasonic wave reflected at the interface, calculate the propagation time to the interface based on the reflected waveform 39, and calculate the structure of the structure based on the propagation time and the speed of sound when propagating to the interface. It is characterized by executing a process of analysis.
26, 27, 28, and 29 are explanatory diagrams of business models using the structural analysis apparatus and structural analysis method of the present invention.

FIG. 26 is an explanatory diagram of a business model in the first embodiment. For customer A who owns an ultrasonic microscope and who owns or can output scan data (1) database (DB) 163, material or composition database (DB) 164, and scan data (2) database (DB) in FIG. implement.

Company A has a three-dimensional coordinate data generation program 161, a sound velocity calculation program 162, a waveform analysis program 171 in FIG. 1, a thickness calculation program 803 for each material in FIG. 805 or the like (hereinafter referred to as "structural analysis program 1") is provided or sold.

Customer A can install the structural analysis program 1 on a computer and a smartphone and perform structural analysis of a structure having multiple layers of different materials or multiple compositions.
Company A receives a license fee for Structural Analysis Program 1 from Customer A.
FIG. 27 is an explanatory diagram of a business model in the second embodiment. It is implemented for customer A who does not own an ultrasonic microscope.

Company A, which owns an ultrasonic microscope, scans data (1) database (DB) 163, material or composition database (DB) 164, scan Data (2) Create a database (DB), and include the three-dimensional coordinate data DB 168 in FIG. hereinafter referred to as "structural analysis program 2").

Customer A installs the structural analysis program 2 on a computer and a smartphone, and can perform structural analysis of a structure having multiple layers of different materials or multiple compositions.
Company A receives a scan data acquisition fee and a license fee for structural analysis program 2 from Customer A.

FIG. 28 is an explanatory diagram of a business model in the third embodiment. Performed for customer A who owns an ultrasonic microscope and can own or output scan data (1) database (DB) 163, material or composition database (DB) 164, and scan data (2) database (DB) in FIG. do.

Company A has a three-dimensional coordinate data generation program 161, a sound velocity calculation program 162, a waveform analysis program 171 in FIG. 1, a thickness calculation program 803 for each material in FIG. 805 etc. (hereinafter referred to as "structural analysis program 3") is operated on the cloud server.

By inputting the database (DB) owned or output by Customer A, Customer A can perform structural analysis of a structure having multiple layers with different materials or multiple compositions on the web browser of Customer A's computer and smartphone. It becomes possible to
Company A receives a usage fee for structural analysis program 3 from Customer A.
FIG. 29 is an explanatory diagram of a business model in the fourth embodiment. It is implemented for customer A who does not own an ultrasonic microscope.

Company A, which owns an ultrasonic microscope, scans data (1) database (DB) 163, material or composition database (DB) 164, scan Data (2) Create a database (DB), and include the three-dimensional coordinate data DB 168 in FIG. hereinafter referred to as "structural analysis program 4") is operated on the cloud server.

Customer A can perform structural analysis of a structure having multiple layers of different materials or multiple compositions on a web browser of a computer or smartphone.
Company A receives scan data acquisition fees and usage fees for the structure analysis program 4 from Customer A.
The embodiments disclosed this time are illustrative in all respects and should not be considered restrictive.

The scope of the present invention is indicated by the scope of the claims rather than the above-described meaning, and is intended to include all modifications within the scope and meaning equivalent to the scope of the claims.
It goes without saying that the matters or contents described in this specification and drawings can be combined with each other.

1 structural analysis device 2 ultrasonic microscope 3 electronic component (measurement sample)
REFERENCE SIGNS LIST 11 control unit 12 main storage unit 13 communication unit 14 operation unit 15 display panel 16 auxiliary storage unit 21 transducer 23 transmission wave 24 reception wave 31 first layer 32 second layer 33 third layer 34 fourth layer 35 fifth layer 31a interface 32a interface 33a interface 34a interface 36 void 39 reflection waveform 161 three-dimensional coordinate data generation program 162 sound velocity calculation program 163 scan data (1) DB
164 Material or Composition DB
165 Scan data (2) DB
166 Propagation time DB
167 Sonic velocity database
168 Three-dimensional coordinate data DB
171 waveform analysis program 169 recording medium 170 network 181 measurement position 802 three-dimensional coordinate data DB
803 calculation program 804 calculation program 805 display program

Claims (10)

A structural analysis device that analyzes a structure having a plurality of interfaces using ultrasonic waves,
a transducer having a function of moving or positioning, a function of transmitting ultrasonic waves to the structure, a function of receiving ultrasonic waves from the structure, and a function of converting the received ultrasonic waves into electrical signals;
a material or composition database that stores the outer dimensions (thickness) and density of the structure;
a scan data database storing scan data obtained by converting the ultrasonic waves acquired by scanning the structure into electrical signals;
a propagation time database that stores propagation times to interfaces;
a sound velocity database that stores sound velocity calculated based on the propagation time calculated from the scan data and the external dimensions (thickness) stored in the material or composition database;
a three-dimensional coordinate database storing three-dimensional coordinate data of the structure generated by obtaining the distance to the interface based on the sound velocity and processing the distance in the depth direction;
A control unit that controls each database ,
A structural analysis apparatus , wherein an amount of warp or distortion of an interface of the structure is obtained from the three-dimensional coordinate data and data of the material or composition database. A structural analysis device that analyzes a structure having a plurality of interfaces using ultrasonic waves,
a transducer having a function of moving or positioning, a function of transmitting ultrasonic waves to the structure, a function of receiving ultrasonic waves from the structure, and a function of converting the received ultrasonic waves into electrical signals;
a scan data database storing scan data obtained by converting the ultrasonic waves acquired by scanning the structure into electrical signals;
a material or composition database that stores the outer dimensions (thickness) and density of the structure;
Equipped with a propagation time database that stores the propagation time to the interface,
Based on the propagation time calculated from the scan data and the external dimensions (thickness) stored in the material or composition database, obtaining the sound velocity of the material of the structure ,
Obtaining Z (acoustic impedance) from the density and the speed of sound,
Adjusting or changing the phase of the ultrasonic wave transmitted by the transducer, obtaining information on the waveform peak, or above a predetermined threshold or below a predetermined threshold, or the change speed of the waveform, and obtaining the time to propagate through the structure,
A structural analysis apparatus , wherein a predetermined threshold value is set for the received ultrasonic waves, and the propagation time is obtained from a range equal to or greater than the predetermined threshold value or equal to or less than the predetermined threshold value. A structural analysis apparatus for analyzing constituent layers between a first layer made of a first material or a first composition and a second layer made of a second material or a second composition using ultrasonic waves. hand,
a transducer having a function of moving or positioning, a function of transmitting ultrasonic waves to the structure, a function of receiving ultrasonic waves from the structure, and a function of converting the received ultrasonic waves into electrical signals;
a scan data database storing scan data obtained by converting the ultrasonic waves acquired by scanning the structure into electrical signals;
a material or composition database storing the density (p) of the structure;
a sound velocity database that stores the sound velocity (c) of the structure;
comprising a control unit,
The control unit obtains Z (acoustic impedance) from the density (p) and the speed of sound (c),
A structural analysis apparatus that measures changes in the constituent layers based on changes in acoustic impedance with respect to time . A structural analysis device that uses ultrasonic waves to analyze an alloy layer between a first layer made of a first material or a first composition and a second layer made of a second material or a second composition, ,
a transducer having a function of moving or positioning, a function of transmitting ultrasonic waves to the structure, a function of receiving ultrasonic waves from the structure, and a function of converting the received ultrasonic waves into electrical signals;
a scan data database storing scan data obtained by converting the ultrasonic waves acquired by scanning the structure into electrical signals;
a material or composition database storing the density (p) of the structure;
a sound velocity database that stores the sound velocity (c) of the structure;
comprising a control unit,
The control unit obtains Z (acoustic impedance) from the density (p) and the speed of sound (c),
A structural analysis apparatus, wherein changes in film thickness or composition of the alloy layer are obtained based on changes in acoustic impedance with respect to time. A structural analysis device that uses ultrasonic waves to analyze an alloy layer between a first layer made of a first material or a first composition and a second layer made of a second material or a second composition, ,
a transducer having a function of moving or positioning, a function of transmitting ultrasonic waves to the structure, a function of receiving ultrasonic waves from the structure, and a function of converting the received ultrasonic waves into electrical signals;
a scan data database storing scan data obtained by converting the ultrasonic waves acquired by scanning the structure into electrical signals;
a material or composition database storing the density (p) of the structure;
a sound velocity database that stores the sound velocity (c) of the structure;
comprising a control unit,
The control unit obtains Z (acoustic impedance) from the density (p) and the speed of sound (c),
A structural analysis apparatus, wherein the heating time or heating temperature of the alloy layer is obtained from the ultrasonic waves received from the structure and the Z (acoustic impedance). The control unit
If the acoustic impedance of the second layer is greater than the acoustic impedance of the first layer, obtain the propagation time to the maximum value of the ultrasonic waves received from the structure;
3. When the acoustic impedance of the second layer is smaller than the acoustic impedance of the first layer, the propagation time to the minimum value of the ultrasonic waves received from the structure is obtained. 6. The structural analysis apparatus according to claim 4 or 5. The phase of the ultrasonic wave transmitted by the transducer is adjusted or changed to obtain information on a waveform peak, a predetermined threshold value or more or a predetermined threshold value or less, or a waveform change speed, and to obtain the time to propagate through the structure. 6. The structural analysis apparatus according to claim 1, claim 3 , claim 4, or claim 5. 6. The structural analysis apparatus according to claim 3 , wherein said control unit generates three-dimensional coordinate data. 6. The structural analysis apparatus according to claim 1, 2, 3, 4, or 5, wherein said movement means can change movement per unit distance. 3. The controller determines the interface amplitude reflectance (Z2−Z1)/(Z2+Z1) from the acoustic impedance Z1 of the first layer and the acoustic impedance Z2 of the second layer. Alternatively, the structural analysis apparatus according to claim 4 or 5.

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