JP7269298B2 - MOM DEVICE, MOM DEVICE MANUFACTURING METHOD, AND INTEGRATED CIRCUIT - Google Patents

Description

The present invention relates to MOM devices, methods of manufacturing MOM devices, and integrated circuits.

2. Description of the Related Art MOM (Metal Oxide Metal) devices utilizing coupling capacitance between wirings are used in semiconductor devices and the like. With the miniaturization of semiconductor devices, it is necessary to reduce the influence of noise caused by parasitic capacitance between the MOM device and adjacent wiring such as signal lines.

For example, a shield part is provided between the MOM capacitor provided in the M6 layer, a signal line wired in the M6 layer, and the MOM capacitor, and a shield part is provided in the M7 layer adjacent to the M6 layer so as to cover the MOM capacitor. (Patent Document 1). It is said that this can suppress the coupling capacitance generated between the MOM capacitance and the signal line. Similarly, capacitance arrays including capacitance elements in which a plurality of electrodes are combined have been disclosed (Patent Documents 2 to 6).

JP 2015-002247 A Chinese Patent Publication No. 103180938 Chinese Patent Publication No. 106575648 Chinese Patent Publication No. 107633128 Chinese Patent Publication No. 108172565 Chinese Patent Publication No. 110832695

In the MOM device used together with other semiconductor devices, a dummy electrode (shield electrode) shields between the signal wiring and the MOM device in order to reduce noise superimposed on the signal wiring and the like included in the semiconductor device. is preferred. On the other hand, when the MOM device is shielded by a dummy electrode, it is also desirable to have a structure in which the parasitic capacitance between the MOM device and the dummy electrode can be easily grasped.

When forming a metal electrode, the metal electrode is buried in the substrate, and the surface is polished by chemical mechanical polishing (CMP). At this time, dishing may occur in which the surface of the metal electrode is excessively polished to form a concave shape. Therefore, it is necessary to prevent dishing.

One aspect of the present invention is a MOM device in which a first electrode, a second electrode, and an insulating layer are laminated on a substrate, wherein the first electrode and the second electrode are linear finger electrodes arranged at a predetermined pitch. The finger electrodes of the first electrode and the finger electrodes of the second electrode are arranged side by side, and the first electrode and the second electrode are arranged with an insulating layer interposed therebetween. A MOM device comprising dummy electrodes stacked and arranged in a pattern equal to a pitch that is a constant multiple of the combined pitch of the finger electrodes of the first and second electrodes.

Here, it is preferable that the dummy electrodes are arranged at the same pitch, twice the pitch, or four times the pitch of the combined pitch of the finger electrodes of the first electrode and the second electrode.

Moreover, it is preferable that the dummy electrode has a width equal to the widths of the first electrode and the second electrode. The dummy electrode preferably has a width equal to the sum of the width of the first electrode, the width of the second electrode, and the width of the gap between the first electrode and the second electrode.

Further, the dummy electrode is larger than the width of the first electrode and the second electrode, and the width of the first electrode, the width of the second electrode, and the width of the gap between the first electrode and the second electrode. It is preferred to have a width less than the sum of

Further, it is preferable that the dummy electrode has linear finger electrodes arranged along a direction crossing the finger electrodes of the first electrode and the second electrode.

Also, the dummy electrodes have strip finger electrodes arranged in a direction parallel to the finger electrodes of the first electrode and the second electrode, and the strip finger electrodes are the fingers of the first electrode and the second electrode. It is preferably aligned with the electrodes.

In addition, the dummy electrodes have strip finger electrodes arranged in a direction parallel to the finger electrodes of the first electrode and the second electrode, and the strip finger electrodes are aligned with the finger electrodes of the first electrode and the second electrode. It is preferably aligned with the spacing of the finger electrodes.

Moreover, it is preferable that the dummy electrode is stacked on the substrate with an insulating layer interposed therebetween, or stacked on the first electrode and the second electrode with an insulating layer interposed therebetween.

Another aspect of the present invention is an integrated circuit comprising any of the MOM devices described above.

According to the present invention, it is possible to provide a MOM device having a sufficient noise shielding effect while suppressing dishing of dummy electrodes.

1 is a longitudinal sectional view showing the basic configuration of a MOM device according to a first embodiment; FIG. 1 is a cross-sectional view showing the basic configuration of a MOM device according to a first embodiment; FIG. 1 is a cross-sectional view showing the basic configuration of a MOM device according to a first embodiment; FIG. 1 is a longitudinal sectional view showing the basic configuration of a MOM device according to a first embodiment; FIG. It is a sectional view showing the manufacturing method of the MOM device in the embodiment of the present invention. It is a sectional view showing the manufacturing method of the MOM device in the embodiment of the present invention. FIG. 10 is a vertical cross-sectional view showing the basic configuration of the MOM device in the second embodiment; FIG. 10 is a vertical cross-sectional view showing the basic configuration of a MOM device according to a third embodiment; FIG. 11 is a cross-sectional view showing the basic configuration of a MOM device in a fourth embodiment; FIG. 11 is a vertical cross-sectional view showing the basic configuration of a MOM device according to a fourth embodiment; FIG. 4 is a vertical cross-sectional view of a MOM device according to another embodiment of the invention; FIG. 4 is a vertical cross-sectional view of a MOM device according to another embodiment of the invention; FIG. 4 is a vertical cross-sectional view of a MOM device according to another embodiment of the invention; FIG. 4 is a vertical cross-sectional view of a MOM device according to another embodiment of the invention;

[First embodiment]
The MOM device 100 according to the embodiment of the present invention includes a substrate 10, a first dummy electrode (first shield electrode), as shown in the longitudinal sectional view of FIG. 1, the lateral sectional view of FIG. 2, and the lateral sectional view of FIG. 12 , comprising a first insulating layer 14 , a first electrode 16 , a second electrode 18 , a second insulating layer 20 , a second dummy electrode (second shield electrode) 22 and a third insulating layer 24 .

FIG. 2 shows a section along line A in the longitudinal section of FIG. 3 shows a cross section along line B in the vertical cross section of FIG. It should be noted that the dimensions of each part in the drawings of the present application may be described in proportions different from the actual dimensions in order to clearly explain the invention.

Substrate 10 is the substrate on which the MOM device 100 is formed. Substrate 10 may be, for example, a silicon substrate. Substrate 10 can be any suitable material, such as a silicon substrate, a germanium substrate, a silicon germanium substrate, a silicon-on-insulator (SOI) substrate, or the like. A first dummy electrode 12, a first insulating layer 14, a first electrode 16, a second electrode 18, a second insulating layer 20, a second dummy electrode 22 and a third insulating layer 24 are formed on the surface of the substrate 10. A MOM device 100 is configured.

The first dummy electrode 12 is a shield electrode for electromagnetically shielding the MOM device 100 . The first dummy electrode 12 can be made of a conductive material such as metal or alloy. Specifically, the first dummy electrode 12 is made of copper (Cu), for example. The thickness of the first dummy electrode 12 is preferably 0.1 μm or more and 0.5 μm or less.

As shown in FIG. 2, the first dummy electrodes 12 may have a comb structure including finger electrodes 12a and busbar electrodes 12b. The finger electrodes 12 a are linear rectangular electrodes having an electrode width W<b>1 when viewed from the surface side of the MOM device 100 . A plurality of finger electrodes 12a are arranged side by side at a pitch (cycle) P1 with an interval therebetween. The busbar electrodes 12b connect the finger electrodes 12a to each other. The busbar electrode 12b connects, for example, ends of the plurality of finger electrodes 12a.

That is, the first dummy electrodes 12 have an electrode width W1 and are arranged at a pitch (period) P1. The electrode width W1 is set to a range that conforms to a design rule that is set so that dishing does not occur in chemical mechanical polishing (CMP) used to form the first dummy electrode 12. be. When the first dummy electrode 12 is made of copper (Cu), it is preferable to set the thickness to 12 μm or less according to the design rule.

In this embodiment, the electrode width W1 is preferably equal to the electrode width W2 of the first electrode 16 and the electrode width W3 of the second electrode 18, which will be described later. Also, the pitch P1 is preferably equal to a constant multiple of the pitch P4 when the first electrode 16 and the second electrode 18, which will be described later, are combined. In the MOM device 100 of this embodiment, pitch P1 is equal to pitch P4. In this specification, "equal" may include a difference of ±20%. The pitch P1 may be equal to two or four times the pitch P4.

In addition, as shown in the longitudinal sectional view of FIG. 4, the electrode width W1 may be larger than the electrode widths W2 and W3 of the first electrode 16 and the second electrode . In other words, the electrode width W1 should be set to be equal to or less than the maximum width that does not cause dishing according to the design rule, and should be set so that the gap between the finger electrodes 12a adjacent to each other is equal to or greater than the minimum width according to the design rule. Just do it.

The first insulating layer 14 is an insulating layer in which the first dummy electrodes 12 are embedded. The first insulating layer 14 can be made of an insulating material such as a silicon oxide film ( _SiOx ). Note that the first insulating layer 14 may be another insulating layer such as a silicon nitride film (SiN). A first insulating layer 14 is formed on the surface of the substrate 10 . The thickness of the first insulating layer 14 is preferably 0.2 μm or more and 1.0 μm or less including the portion where the first dummy electrodes 12 are embedded.

The first electrode 16 and the second electrode 18 are electrodes that constitute the capacitive element of the MOM device 100 . The first electrode 16 and the second electrode 18 can be made of a conductive material such as a metal or an alloy. Specifically, the first electrode 16 and the second electrode 18 are made of copper (Cu), for example. The thicknesses of the first electrode 16 and the second electrode 18 are preferably 0.1 μm or more and 0.5 μm or less.

The first electrode 16 can have a comb-shaped structure including finger electrodes 16a and busbar electrodes 16b, as shown in FIG. The finger electrodes 16 a are linear rectangular electrodes having an electrode width W<b>2 when viewed from the surface side of the MOM device 100 . A plurality of finger electrodes 16a are arranged side by side at a pitch (period) P2 with an interval therebetween. The busbar electrodes 16b connect the finger electrodes 16a to each other. The busbar electrode 16b connects, for example, ends of the finger electrodes 16a.

The second electrode 18 may have a comb structure including finger electrodes 18a and busbar electrodes 18b, as shown in FIG. The finger electrodes 18 a are linear rectangular electrodes having an electrode width W<b>3 when viewed from the surface side of the MOM device 100 . A plurality of finger electrodes 18a are arranged side by side at a pitch (period) P3 with an interval therebetween. The busbar electrodes 18b connect the finger electrodes 18a to each other. The busbar electrode 18b connects, for example, end portions of the plurality of finger electrodes 18a.

The electrode width W2 and pitch P2 of the finger electrodes 16a and the electrode width W3 and pitch P3 of the finger electrodes 18a are preferably set to values in accordance with the design rule of the MOM device 100. FIG. When the first electrode 16 and the second electrode 18 are made of copper (Cu), the electrode width W2 and the electrode width W3 are preferably 5 nm or more and 0.5 μm or less. Moreover, it is preferable that the pitch P2 and the pitch P3 are set to 20 nm or more and 2.0 μm or less.

As shown in FIG. 3, the first electrodes 16 and the second electrodes 18 are arranged such that finger electrodes 16a and finger electrodes 18a forming a comb structure are alternately positioned. At this time, the pitch (period) P4 of the combination of the finger electrodes 16a of the first electrode 16 and the finger electrodes 18a of the second electrode 18 is preferably set to a value that conforms to the design rule of the MOM device 100. . When the first electrode 16 and the second electrode 18 are made of copper (Cu), the pitch P4 is preferably 10 nm or more and 1.0 μm or less.

The second insulating layer 20 is an insulating layer in which the first electrode 16 and the second electrode 18 are embedded. The second insulating layer 20 can be made of an insulating material such as a silicon oxide film ( _SiOx ). Note that the second insulating layer 20 may be another insulating layer such as a silicon nitride film (SiN). A second insulating layer 20 is formed on the surfaces of the first dummy electrode 12 and the first insulating layer 14 . The thickness of the second insulating layer 20 is preferably 0.2 μm or more and 1.0 μm or less including the portion where the first electrode 16 and the second electrode 18 are embedded.

The first electrode 16, the second electrode 18 and the second insulating layer 20 may be laminated repeatedly. The MOM device 100 according to the present embodiment shows an example in which the first electrode 16, the second electrode 18, and the second insulating layer 20 are stacked three times repeatedly in the thickness direction (Z direction).

The second dummy electrode 22 is a shield electrode for electromagnetically shielding the MOM device 100 . The second dummy electrode 22 can be made of a conductive material such as metal or alloy. Specifically, the second dummy electrode 22 is made of copper (Cu), for example. The thickness of the second dummy electrode 22 is preferably 0.1 μm or more and 0.5 μm or less.

The second dummy electrode 22 can have a comb structure including finger electrodes and busbar electrodes, like the first dummy electrode 12 . The electrode width and pitch of the finger electrodes of the second dummy electrodes 22 are preferably equal to the electrode width W1 and pitch P1 of the finger electrodes 12a. Also, the pitch P1 may be equal to twice or four times the pitch P4.

The third insulating layer 24 is an insulating layer in which the second dummy electrodes 22 are embedded. The third insulating layer 24 can be made of an insulating material such as silicon oxide ( _SiOx ). Note that the third insulating layer 24 may be another insulating layer such as a silicon nitride film (SiN). A third insulating layer 24 is formed on the surfaces of the first and second electrodes 16 and 18 and the second insulating layer 20 . The thickness of the third insulating layer 24 is preferably 0.2 μm or more and 1.0 μm or less including the portion where the second dummy electrodes 22 are embedded.

According to the MOM device 100 , the first dummy electrode 12 and the second dummy electrode 22 can shield the signal wiring and the like included in the semiconductor device from the MOM device. Furthermore, in the MOM device 100, the electrode width W1 and the pitch P1 of the first dummy electrode 12 and the second dummy electrode 22 are set to values corresponding to the electrode widths W2 and W3 and the pitch P4 of the first electrode 16 and the second electrode 18. Therefore, the parasitic capacitance between the first dummy electrode 12 and the second dummy electrode 22 and the first electrode 16 and the second electrode 18 can be easily grasped.

In addition, when forming the first dummy electrode 12 and the second dummy electrode 22, it is possible to suppress the occurrence of dishing in chemical mechanical polishing (CMP).

[Production method]
A method for manufacturing the MOM device 100 will be described below with reference to FIGS. In FIG. 5, the process of forming the first dummy electrode 12 and the first insulating layer 14 on the surface of the substrate 10 will be described. Referring to FIG. 6, the process of forming the first electrode 16, the second electrode 18 and the second insulating layer 20 on the surfaces of the first dummy electrode 12 and the first insulating layer 14 will be described.

In step S10, a process of forming an insulating layer 30 on the surface of the substrate 10 is performed. When silicon oxide ( _SiOx ) or silicon nitride (SiN) is used as the first insulating layer 14, silicon oxide ( _SiOx ) or silicon nitride (SiN) is deposited as the insulating layer 30 by chemical vapor deposition (CVD). method), etc. The insulating layer 30 is preferably formed with a thickness of 0.2 μm or more and 1.0 μm or less.

In step S12, a process for forming trenches T1 in the insulating layer 30 is performed. After applying a resist R on the surface of the insulating layer 30 , the resist R is patterned into a shape corresponding to the first dummy electrode 12 by applying a photolithography technique and removed. Thereafter, using the resist R as a mask, the insulating layer 30 is etched to form the trench T1. The width of the groove T1 in the portion corresponding to the finger electrode 12a of the first dummy electrode 12 is made the same as the electrode width W1 of the first dummy electrode 12. As shown in FIG. The pitch (period) of arrangement of the grooves T1 in the portions corresponding to the finger electrodes 12a of the first dummy electrodes 12 is set to be the same as the pitch P1 of the first dummy electrodes 12. As shown in FIG. Furthermore, the depth of the trench T1 is preferably set to a depth corresponding to the thickness of the first dummy electrode 12, and is preferably set to 0.1 μm or more and 0.5 μm or less, for example. After forming the trench T1, the resist R is removed. The insulating layer 30 in which the trench T1 is formed becomes the first insulating layer 14 in the MOM device 100. As shown in FIG.

When electrode width W1=electrode width W2=electrode width W3 and pitch P1=pitch P4, the pattern of the first dummy electrode 12 is the same as the pattern of the combination of the first electrode 16 and the second electrode 18. The resist R for the combination of the electrode 16 and the second electrode 18 and the resist R for the first dummy electrode 12 can be formed using the same mask. Therefore, the mask cost can be reduced.

In step S14, a process of embedding the conductive layer 32 to be the first dummy electrode 12 in the trench T1 of the first insulating layer 14 is performed. When the first dummy electrode 12 is made of a metal such as copper (Cu), the conductive layer 32 that becomes the first dummy electrode 12 can be buried in the groove T1 by plating.

In step S16, a process of removing excess portions of the conductive layer 32 to form the first dummy electrodes 12 is performed. By applying chemical mechanical polishing (CMP) to grind off excess portions of the conductive layer 32, the first dummy electrodes 12 having a comb-shaped structure embedded in the trenches T1 are formed.

At this time, by setting the electrode width W1 of the finger electrodes 12a of the first dummy electrodes 12 to a value in accordance with a design rule that does not cause dishing in chemical mechanical polishing (CMP), dishing is prevented during the grinding. ) can be suppressed. For example, when the first dummy electrode 12 is made of copper (Cu), the occurrence of dishing can be suppressed by setting the electrode width W1 to 12 μm or less.

Next, a process for forming the first electrode 16, the second electrode 18, and the second insulating layer 20 will be described with reference to FIG.

In step S20, a process of forming the insulating layer 34 on the surfaces of the first dummy electrode 12 and the first insulating layer 14 is performed. When the second insulating layer 20 is made of silicon oxide ( _SiOx ) or silicon nitride (SiN), the insulating layer 34 is made of silicon oxide ( _SiOx ) or silicon nitride (SiN) by chemical vapor deposition (CVD). method), etc. The insulating layer 34 is preferably formed with a thickness of 0.2 μm or more and 1.0 μm or less.

In step S22, a process of forming trenches T2 and T3 in the insulating layer 34 is performed. After applying a resist R on the surface of the insulating layer 34, the resist R is patterned into a shape corresponding to the first electrode 16 and the second electrode 18 by applying a photolithography technique and removed. After that, the insulating layer 34 is etched using the resist R as a mask to form the trenches T2 and T3. The width of the groove T2 in the portion corresponding to the finger electrode 16a of the first electrode 16 is made the same as the electrode width W2 of the finger electrode 16a of the first electrode 16. As shown in FIG. The width of the groove T3 of the portion corresponding to the finger electrode 18a of the second electrode 18 is made the same as the electrode width W3 of the finger electrode 18a of the second electrode 18. As shown in FIG. The pitch (period) of the grooves T2 in the portion corresponding to the finger electrodes 16a of the first electrode 16 is made the same as the pitch P2 of the finger electrodes 16a of the first electrode 16. FIG. In addition, the pitch (period) of arrangement of the grooves T3 in the portion corresponding to the finger electrodes 18a of the second electrode 18 is made the same as the pitch P3 of the finger electrodes 18a of the second electrode 18. FIG. Further, the pitch P4 is set when the finger electrodes 16a of the first electrode 16 embedded in the trench T2 and the finger electrodes 18a of the second electrode 18 embedded in the trench T3 are combined.

Furthermore, the depths of the grooves T2 and T3 are preferably set to correspond to the thicknesses of the first electrode 16 and the second electrode 18, and are preferably 0.1 μm or more and 0.5 μm or less, for example. is. After forming the trenches T2 and T3, the resist R is removed. The insulating layer 34 in which the trenches T2 and T3 are formed becomes the second insulating layer 20 in the MOM device 100. FIG.

In step S24, a process of filling the groove T2 of the second insulating layer 20 with the conductive layer 36 to be the first electrode 16 and filling the groove T3 with the conductive layer 36 to be the second electrode 18 is performed. When the first electrode 16 and the second electrode 18 are made of metal such as copper (Cu), a conductive layer 36 that becomes the first electrode 16 and the second electrode 18 is embedded in the groove T2 and the groove T3 by a plating method. can be done.

In step S26, a process of removing excess portions of the conductive layer 36 to form the first electrode 16 and the second electrode 18 is performed. By applying chemical mechanical polishing (CMP) to grind off excess portions of the conductive layer 36, the first electrode 16 having a comb structure buried in the trench T2 and the first electrode 16 having a comb structure buried in the trench T3 are formed. Two electrodes 18 are formed.

At this time, the electrode width W2 of the finger electrodes 16a of the first electrode 16 and the electrode width W3 of the finger electrodes 18a of the second electrode 18 are set to values in accordance with design rules that do not cause dishing in chemical mechanical polishing (CMP). By setting, it is possible to suppress the occurrence of dishing during the grinding. For example, when the first electrode 16 and the second electrode 18 are made of copper (Cu), the occurrence of dishing can be suppressed by setting the electrode width W2 and the electrode width W3 to 12 μm or less.

When the MOM device 100 has a structure in which the first electrode 16, the second electrode 18 and the second insulating layer 20 are laminated a plurality of times, steps S20 to S26 may be repeated as many times as necessary. Also, the second dummy electrode 22 and the third insulating layer 24 can be formed in the same manner as the first dummy electrode 12 and the first insulating layer 14 by repeating steps S10 to S16.

As described above, the MOM device 100 including the first dummy electrode 12, the first insulating layer 14, the first electrode 16, the second electrode 18, the second insulating layer 20, the second dummy electrode 22 and the third insulating layer 24 is manufactured. can be manufactured.

[Second embodiment]
As shown in FIG. 7, the MOM device 200 according to the second embodiment has a configuration in which the first dummy electrode 12 and the second dummy electrode 22 are changed to have an electrode width W4 and a pitch (period) P5. In the present embodiment, the electrode width W4 of the first dummy electrode 12 and the second dummy electrode 22 is the electrode width W2 of the finger electrode 16a, the electrode width W3 of the finger electrode 18a, and the gap width between the finger electrodes 16a and 18a. Equal to the sum of G1. However, the electrode width W4 is set within a range according to a design rule that is set so that dishing does not occur in chemical mechanical polishing (CMP). When the first dummy electrode 12 is made of copper (Cu), it is preferable to set the thickness to 12 μm or less according to the design rule. Also, the pitch P5 between the first dummy electrodes 12 and the second dummy electrodes 22 is set equal to four times the pitch P1 of the MOM device 100 .

The MOM device 200 is manufactured in the same manner as the MOM device 100 in the first embodiment except that the electrode width W4 and the pitch (cycle) P5 of the first dummy electrode 12 and the second dummy electrode 22 are changed. can be done.

According to the MOM device 200 , the first dummy electrode 12 and the second dummy electrode 22 can shield the signal wiring and the like included in the semiconductor device from the MOM device. Furthermore, the parasitic capacitance between the first dummy electrode 12 and the second dummy electrode 22 and the first electrode 16 and the second electrode 18 in the MOM device 200 can be easily grasped.

In addition, when forming the first dummy electrode 12 and the second dummy electrode 22, it is possible to suppress the occurrence of dishing in chemical mechanical polishing (CMP).

[Third Embodiment]
As shown in FIG. 8, the MOM device 202 according to the third embodiment has a configuration in which the first dummy electrode 12 and the second dummy electrode 22 are changed to have an electrode width W4 and a pitch (period) P6. In the present embodiment, the electrode width W4 of the first dummy electrode 12 and the second dummy electrode 22 is the electrode width W2 of the finger electrode 16a, the electrode width W3 of the finger electrode 18a, and the gap width between the finger electrodes 16a and 18a. Equal to the sum of G1. However, the electrode width W4 is set within a range according to a design rule that is set so that dishing does not occur in chemical mechanical polishing (CMP). When the first dummy electrode 12 is made of copper (Cu), it is preferable to set the thickness to 12 μm or less according to the design rule. Also, the pitch P5 between the first dummy electrodes 12 and the second dummy electrodes 22 is set equal to twice the pitch P1 of the MOM device 100 .

Note that the MOM device 202 is manufactured in the same manner as the MOM device 100 in the first embodiment except that the electrode width W4 and the pitch (period) P6 of the first dummy electrode 12 and the second dummy electrode 22 are changed. can be done. Alternatively, the width is (electrode width W2+gap width G1)<electrode width W4<(electrode width W2+electrode width W3+gap width G1), or (electrode width W3+gap width G1)<electrode width W4<(electrode width It can also be designed to satisfy W2+electrode width W3+gap width G1).

According to the MOM device 202 , the first dummy electrode 12 and the second dummy electrode 22 can shield the signal wiring and the like included in the semiconductor device from the MOM device. Furthermore, the parasitic capacitance between the first dummy electrode 12 and the second dummy electrode 22 and the first electrode 16 and the second electrode 18 in the MOM device 202 can be easily grasped.

In addition, when forming the first dummy electrode 12 and the second dummy electrode 22, it is possible to suppress the occurrence of dishing in chemical mechanical polishing (CMP).

[Fourth embodiment]
The MOM device 300 according to the fourth embodiment has a configuration in which the first dummy electrode 12 and the second dummy electrode 22 are rotated by 90° with respect to the MOM device 100, as shown in FIGS. 9 shows a cross-sectional view of the MOM device 300. FIG. FIG. 10 shows a longitudinal sectional view along line C in FIG.

In the MOM device 300 , the finger electrodes 12 a of the first dummy electrodes 12 extend in a direction perpendicular to the finger electrodes 16 a of the first electrode 16 and the finger electrodes 18 a of the second electrode 18 . The finger electrodes of the second dummy electrode 22 also extend in a direction perpendicular to the finger electrodes 16 a of the first electrode 16 and the finger electrodes 18 a of the second electrode 18 .

In this embodiment, the electrode width W1 of the first dummy electrode 12 and the second dummy electrode 22 is made equal to the electrode width W2 of the finger electrode 16a and the electrode width W3 of the finger electrode 18a. The pitch P1 between the first dummy electrodes 12 and the second dummy electrodes 22 is equal to the pitch P4 when the electrode width W2 of the finger electrodes 16a and the finger electrodes 18a are combined. Note that the pitch P1 may be equal to twice or four times the pitch P4.

Also, as in the MOM device 200 of the second embodiment, the first dummy electrode 12 and the second dummy electrode 22 may be configured to have an electrode width W4 and a pitch (period) P5. That is, the electrode width W4 of the first dummy electrode 12 and the second dummy electrode 22 is the sum of the electrode width W2 of the finger electrode 16a, the electrode width W3 of the finger electrode 18a, and the gap width G1 between the finger electrode 16a and the finger electrode 18a. may be equal. Also, the pitch P5 between the first dummy electrodes 12 and the second dummy electrodes 22 may be equal to four times the pitch P1 of the MOM device 100 .

Also, as with the MOM device 202 in the third embodiment, the first dummy electrode 12 and the second dummy electrode 22 may be configured to have an electrode width W4 and a pitch (period) P6. That is, the electrode width W4 of the first dummy electrode 12 and the second dummy electrode 22 is the sum of the electrode width W2 of the finger electrode 16a, the electrode width W3 of the finger electrode 18a, and the gap width G1 between the finger electrode 16a and the finger electrode 18a. may be equal. Also, the pitch P5 between the first dummy electrodes 12 and the second dummy electrodes 22 may be equal to twice the pitch P1 of the MOM device 100 .

The MOM device 300 can be manufactured in the same manner as the MOM device 100 in the first embodiment, except that the directions of the first dummy electrodes 12 and the second dummy electrodes 22 are changed. Alternatively, the width is (electrode width W2+gap width G1)<electrode width W4<(electrode width W2+electrode width W3+gap width G1) or (electrode width W3+gap width G1)<electrode width W4<(electrode width W4) It may be designed to satisfy (width W2+electrode width W3+gap width G1).

According to the MOM device 300 , the first dummy electrode 12 and the second dummy electrode 22 can shield the signal wiring and the like included in the semiconductor device from the MOM device. Furthermore, the parasitic capacitance between the first dummy electrode 12 and the second dummy electrode 22 and the first electrode 16 and the second electrode 18 in the MOM device 300 can be easily grasped.

In addition, when forming the first dummy electrode 12 and the second dummy electrode 22, it is possible to suppress the occurrence of dishing in chemical mechanical polishing (CMP).

Furthermore, by extending the finger electrodes of the first dummy electrode 12 and the second dummy electrode 22 in a direction orthogonal to the finger electrodes 16a of the first electrode 16 and the finger electrodes 18a of the second electrode 18, the first dummy electrode The busbar electrodes of the electrodes 12 and the second dummy electrodes 22, the busbar electrodes 16b of the first electrodes 16, and the busbar electrodes 18b of the second electrodes 18 do not overlap on the plane. Therefore, it is possible to easily take out wiring from the first dummy electrode 12, the first electrode 16, the second electrode 18, and the second dummy electrode 22. FIG.

[Other embodiments]
The MOM device 400 in another embodiment of the invention can be a modification of the MOM device 100 of the first embodiment, as shown in FIG. The MOM device 400 differs from the first embodiment in that the finger electrodes of the first dummy electrode 12 and the second dummy electrode 22 are arranged between the finger electrodes of the first electrode 16 and the second electrode 18 . is different from the MOM device 100 in .

The electrode width of each finger electrode of the first dummy electrode 12 and each finger electrode of the second dummy electrode 22 may be larger or smaller than the pitch P4 between the first electrode 16 and the second electrode 18 .

The MOM device 500 in another embodiment of the invention can be a variation of the MOM device of any one of the first through fourth embodiments, as shown in FIG. In the MOM device 500, the finger electrodes of the first dummy electrode 12 and the second dummy electrode 22 extend in the same direction, but are not aligned with each other in plan view.

As an example, the MOM device 500 is a modification of the MOM device 100 according to the first embodiment, in which each finger electrode of the first dummy electrode 12 is aligned with the interval between the first electrode 16 and the second electrode 18, On the other hand, each finger electrode of the second dummy electrode 22 is aligned with the first electrode 16 or the second electrode 18 .

As shown in FIG. 13, a MOM device 600 according to another embodiment of the present invention can be any one of the MOM devices according to the first to third embodiments and the MOM device 400 according to the fourth embodiment. can be a combination of In the MOM device 600, the finger electrodes of the first dummy electrode 12 and the second dummy electrode 22 extend in different directions.

For example, in the MOM device 600, each finger electrode of the first dummy electrode 12 extends in the X direction, each finger electrode of the second dummy electrode 22 extends in the Y direction, and the first electrode 16 or the second electrode 18 are placed in line with the The first dummy electrode 12 and the second dummy electrode 22 are orthogonal to each other and form a metal shield structure for both the upper and lower sides of the MOM device to improve the electromagnetic shielding effect.

The MOM device 700 in another embodiment of the invention can be a variation of any one of the MOM devices in the first through fourth embodiments, as shown in FIG. Only one of the first dummy electrode 12 and the second dummy electrode 22 is arranged in the MOM device 700 .

For example, MOM device 700 may be a modification of MOM device 100 in the first embodiment, in which only second dummy electrode 22 is provided and first dummy electrode 12 and first insulating layer 14 are omitted. ing.

It should be noted that the present invention can be an integrated circuit that includes the MOM device described in any of the above embodiments. MOM devices can be used to build functional modules such as sample-and-hold modules, analog-to-digital converters, filters, or integrated circuit radio frequency communication modules.

10 substrate 12a finger electrode 12b busbar electrode 16a finger electrode 16b busbar electrode 18a finger electrode 18b busbar electrode 30 insulating layer 32 conductive layer 34 insulating layer 36 conductive layer 100 MOM device 200 MOM device , 202 MOM devices, 300 MOM devices, 400 MOM devices, 500 MOM devices, 600 MOM devices, 700 MOM devices.

Claims (8)

A MOM device in which a first electrode, a second electrode, and an insulating layer are laminated on a substrate,
The first electrode and the second electrode include a configuration in which linear finger electrodes are arranged side by side at a predetermined pitch, and the finger electrodes of the first electrode and the finger electrodes of the second electrode are arranged side by side. cage,
Furthermore, a dummy is laminated on the first electrode and the second electrode via an insulating layer and arranged in a pattern equal to a pitch that is a constant multiple of a combined pitch of the finger electrodes of the first electrode and the second electrode. with electrodes ,
The MOM device, wherein the dummy electrode has a width equal to the sum of the width of the first electrode, the width of the second electrode, and the width of the gap between the first electrode and the second electrode. A MOM device in which a first electrode, a second electrode, and an insulating layer are laminated on a substrate,
The first electrode and the second electrode include a configuration in which linear finger electrodes are arranged side by side at a predetermined pitch, and the finger electrodes of the first electrode and the finger electrodes of the second electrode are arranged side by side. cage,
Furthermore, a dummy is laminated on the first electrode and the second electrode via an insulating layer and arranged in a pattern equal to a pitch that is a constant multiple of a combined pitch of the finger electrodes of the first electrode and the second electrode. with electrodes,
The dummy electrode is larger than the width of the first electrode and the second electrode, and is the sum of the width of the first electrode, the width of the second electrode, and the width of the gap between the first electrode and the second electrode. A MOM device characterized by having a width less than A MOM device in which a first electrode, a second electrode, and an insulating layer are laminated on a substrate,
The first electrode and the second electrode include a configuration in which linear finger electrodes are arranged side by side at a predetermined pitch, and the finger electrodes of the first electrode and the finger electrodes of the second electrode are arranged side by side. cage,
Furthermore, a dummy is laminated on the first electrode and the second electrode via an insulating layer and arranged in a pattern equal to a pitch that is a constant multiple of a combined pitch of the finger electrodes of the first electrode and the second electrode. with electrodes,
The MOM device, wherein the dummy electrodes have linear finger electrodes arranged along a direction crossing the finger electrodes of the first electrode and the second electrode. A MOM device in which a first electrode, a second electrode, and an insulating layer are laminated on a substrate,
The first electrode and the second electrode include a configuration in which linear finger electrodes are arranged side by side at a predetermined pitch, and the finger electrodes of the first electrode and the finger electrodes of the second electrode are arranged side by side. cage,
Furthermore, a dummy is laminated on the first electrode and the second electrode via an insulating layer and arranged in a pattern equal to a pitch that is a constant multiple of a combined pitch of the finger electrodes of the first electrode and the second electrode. with electrodes,
The dummy electrodes have strip finger electrodes arranged in a direction parallel to the finger electrodes of the first electrode and the second electrode, and the strip finger electrodes are the finger electrodes of the first electrode and the second electrode. A MOM device characterized in that it is aligned with a spacing of . The MOM device according to any one of claims 1 to 4 ,
The MOM device, wherein the dummy electrodes are arranged at the same pitch, twice the pitch, or four times the pitch of the combined finger electrodes of the first electrode and the second electrode. A MOM device according to any one of claims 1 to 3 ,
The dummy electrodes have strip finger electrodes arranged in a direction parallel to the finger electrodes of the first electrode and the second electrode, and the strip finger electrodes are aligned with the finger electrodes of the first electrode and the second electrode. A MOM device, characterized in that it is aligned. A MOM device according to any one of claims 1 to 4 ,
The MOM device according to claim 1, wherein the dummy electrode is stacked on the substrate via an insulating layer, or stacked on the first electrode and the second electrode via an insulating layer. An integrated circuit comprising a MOM device according to any one of claims 1-7 .

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